Light-emitting device and method for manufacturing same

Abstract

The present disclosure provides: a high-definition light-emitting device in which an increase in the number of manufacturing steps and a decrease in emission lifetime are minimized; and a method for manufacturing a light-emitting device, the method comprising, when vapor-depositing, on a substrate 1, a plurality of lower electrodes 2, an insulating layer 3 covering the bridges of the lower electrodes 2, and a plurality of light-emitting layers of mutually different emission colors for pixels 4a to 4c surrounded by the insulating layer 3, disposing a lift-off layer 8 having openings in the pixels 4a to 4c on the insulating layer 3, and sequentially vapor-depositing light-emitting layers of different emission colors by using a mask having an opening corresponding to a desired pixel.

Description

Light emitting device and manufacturing method thereof

[0001] The present invention relates to a light emitting device and a method for manufacturing the same.

[0002] An organic electroluminescent (EL) light-emitting device is a self-emitting device that includes one or more organic EL elements. Generally, an organic EL element is a light-emitting element having organic compound layers, such as a hole injection layer, a hole transport layer, an emissive layer, an electron transport layer, and an electron injection layer, disposed between an anode and a cathode facing the anode. Holes injected from the anode and electrons injected from the cathode recombine in the emissive layer via the hole transport layer and the electron transport layer, respectively. One method for manufacturing such organic EL light-emitting devices is vacuum deposition. Specifically, organic materials are heated in a vacuum chamber above their vaporization temperature to generate vapors of the vaporization materials, which are then deposited on a substrate that serves as the base for the organic EL display device, forming thin film layers such as organic compound layers. When manufacturing organic EL display devices using vacuum deposition, a metal mask with openings in predetermined regions is typically used to form a light-emitting layer with a predetermined pattern. This results in an organic EL light-emitting device that emits full color (red, green, and blue) light. However, with the patterning method using a metal mask, it is becoming increasingly difficult to accurately deposit the light-emitting layer so that it fits within a specified pixel, as display devices become increasingly high-definition and have higher aperture ratios. One of the challenges is the processing accuracy of the metal mask.

[0003] Patent Document 1 discloses a method of forming a mask pattern by photolithography on a continuously formed organic EL layer, and then etching the organic EL layer to pattern each color.

[0004] Furthermore, Patent Document 2 discloses a method for manufacturing an organic EL display device using a photolithography process and lift-off. In this manufacturing method, a lift-off layer is provided on a substrate, a light-emitting layer is vapor-deposited, and then the light-emitting layer on the lift-off layer is lifted off, and this process is repeated for each color to pattern the light-emitting layer. Because this method uses photolithography, it is an effective method for achieving higher resolution and a higher aperture ratio in display devices compared to vapor deposition methods that use metal masks.

[0005] JP 2013-77494 A JP 2022-177722 A

[0006] As described above, photolithography is effective in achieving high definition and high efficiency, but when manufacturing a full-color organic EL light-emitting device, multiple photolithography processes must be repeated. To form three light-emitting layers (red, green, and blue), the process of resist application, photolithography, and resist removal must be repeated three times, increasing the number of steps. Furthermore, the increased number of times the light-emitting layer comes into contact with the resist remover may shorten the light-emitting lifetime, and further improvement is desired.

[0007] The present invention has been made in consideration of the above background technology, and aims to provide a high-definition light-emitting device in which an increase in the number of manufacturing steps and a decrease in light-emitting lifetime are suppressed, and a method for manufacturing the light-emitting device.

[0008] A first aspect of the present invention is a method for manufacturing a light-emitting device having a substrate, a plurality of lower electrodes arranged on the substrate, an insulating layer covering edges of the lower electrodes, a light-emitting layer arranged on the lower electrodes in pixels defined by the insulating layer, and an upper electrode facing the lower electrodes with the light-emitting layer sandwiched between them, the method comprising the steps of: preparing a substrate provided with the plurality of lower electrodes, the insulating layer covering edges of the lower electrodes, and a lift-off layer having openings above the pixels defined by the insulating layer; vapor-depositing the light-emitting layer on the lower electrodes of the pixels; and peeling off the lift-off layer from the substrate, wherein the vapor deposition of the light-emitting layer is performed by placing a vapor deposition mask having openings over the openings of the lift-off layer.

[0009] A second aspect of the present invention is a light-emitting device comprising: a substrate; a plurality of lower electrodes arranged on the substrate; an insulating layer covering edges of the lower electrodes; a light-emitting layer arranged on the lower electrodes in pixels partitioned by the insulating layer; and an upper electrode facing the lower electrodes with the light-emitting layer sandwiched between them, wherein the light-emitting layer emits light of a plurality of colors, and wherein an upper surface of the insulating layer has a portion that does not contain a silicon compound and a portion that contains a silicon compound.

[0010] According to the present invention, the number of steps in conventional photolithography is reduced, and as a result, a high-definition light-emitting device in which a decrease in light-emitting life is suppressed can be provided.

[0011] FIG. 1 is a process diagram of a method for manufacturing a light emitting device according to an embodiment of the present invention, showing an end surface cut in the thickness direction of a substrate. FIG. 2 is a process diagram of a method for manufacturing a light emitting device according to an embodiment of the present invention, showing an end surface cut in the thickness direction of a substrate. FIG. 3 is a process diagram of a method for manufacturing a light emitting device according to an embodiment of the present invention, showing an end surface cut in the thickness direction of a substrate. FIG. 4 is a process diagram of a method for manufacturing a light emitting device according to an embodiment of the present invention, showing an end surface cut in the thickness direction of a substrate. FIG. 5 is a process diagram of a method for manufacturing a light emitting device according to an embodiment of the present invention, showing an end surface cut in the thickness direction of a substrate. FIG. 6 is a process diagram of a method for manufacturing a light emitting device according to an embodiment of the present invention, showing an end surface cut in the thickness direction of a substrate. FIG. 7 is a process diagram of a method for manufacturing a light emitting device according to an embodiment of the present invention, showing an end surface cut in the thickness direction of a substrate. FIG. 8 is a process diagram of a method for manufacturing a light emitting device according to an example of the present invention, showing an end surface cut in the thickness direction of a substrate. FIG. 1 is a process diagram of a manufacturing method for a light-emitting device according to an example of the present invention, and is a cross-sectional view of an end surface cut in the thickness direction of a substrate. FIG. 2 is a schematic cross-sectional view of an example of a display device according to an embodiment of the present invention. FIG. 3 is a schematic view showing an example of a display device according to an embodiment of the present invention. FIG. 4 is a schematic view showing an example of an imaging device according to an embodiment of the present invention. FIG. 5 is a schematic view showing an example of an electronic device according to an embodiment of the present invention. FIG. 6 is a schematic view showing an example of a display device according to an embodiment of the present invention. FIG. 7 is a schematic view showing an example of a bendable display device. FIG. 8 is a schematic view showing an example of an illumination device according to an embodiment of the present invention. FIG. 9 is a schematic view showing an example of an automobile having a vehicle lamp according to an embodiment of the present invention. FIG. 10 is a schematic view showing an example of a wearable device according to an embodiment of the present invention. FIG. 11 is a schematic view showing an example of a wearable device according to an embodiment of the present invention, having an imaging device.

[0012] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. In each drawing, the same components are designated by the same reference numerals, and duplicated explanations will be omitted. Each embodiment will be described in more detail below.

[0013] [Manufacturing Process] A manufacturing method of a light-emitting device according to an embodiment of the present invention includes the following steps: (1) preparing a substrate provided with a plurality of lower electrodes, an insulating layer covering the edges of the lower electrodes, and a lift-off layer having openings above pixels defined by the insulating layer, (2) arranging a vapor deposition mask having openings over the openings of the lift-off layer and vapor-depositing a light-emitting layer on the lower electrodes of the pixels, and (3) peeling off the lift-off layer from the substrate.

[0014] Each step and component will be described below with reference to Figures 1A to 1D and 3A to 3D. Figures 1A to 1D and 2A to 2C are cross-sectional views of the substrate in the thickness direction, which schematically illustrate the manufacturing steps of this embodiment, and Figures 3A to 3D are cross-sectional views of the substrate in the thickness direction, which schematically illustrate the configuration of the lift-off layer of this embodiment.

[0015] 1A, a substrate 1 is prepared, which is provided with a plurality of lower electrodes 2, an insulating layer 3 that partitions the lower electrodes 2, and a lift-off layer 8 that forms openings above pixels 4a to 4c that are partitioned by the insulating layer 3. In the present invention, the regions partitioned by the insulating layer 3 on the lower electrodes 2 are called pixels. The lift-off layer 8 is provided so that openings are above the pixels 4a to 4c. The light-emitting device of this embodiment is intended for a full-color display light-emitting device in which the light-emitting layers emit three colors, and light-emitting layers of different colors are disposed in the pixels 4a to 4c.

[0016] 3A to 3D are schematic diagrams illustrating the configurations of the insulating layer 3 and the lift-off layer 8 according to this embodiment. FIGS. 3A to 3D are cross-sectional views of the substrate 1 in the thickness direction. When viewed from the top surface 12, the lift-off layer 8 according to this embodiment is shaded by the lift-off layer 8 at a boundary C between the portion of the insulating layer 3 where the lift-off layer 8 is disposed and the insulating layer 3. Specifically, as shown in FIGS. 3A to 3D , the lift-off layer 8 has a width A at a portion C where the side surface of the lift-off layer 8 contacts the insulating layer 3, and a maximum width B of the lift-off layer 8 in a portion of the height direction of the lift-off layer 8. In FIGS. 3A to 3C , the maximum width B is the top surface 12 of the lift-off layer 8. In FIG. 3D , the lift-off layer 8 has a cross-sectional shape with a maximum width B at a portion other than the top surface 12. As shown in FIG. 3C , the width A of the lift-off layer 8 at portion C does not need to be minimum, but by satisfying A<B, the boundary C is shaded by the lift-off layer 8, making it difficult for deposition to occur at the boundary C during deposition. As a result, the deposit deposited from the boundary C to the side surface of the lift-off layer 8 becomes a burr after lift-off, which may cause an electrical short circuit or the like and thus induce pixel defects, thereby reducing the risk of this.

[0017] 1B to 2A, deposition masks 10a to 10c having openings 11a to 11c are placed over the openings in the lift-off layer 8, and light-emitting layers 13a to 13c are sequentially deposited on the lower electrodes 2 of the pixels 4a to 4c. The light-emitting layers 13a to 13c emit light of different colors, and deposition is performed for each color. Therefore, first, in the step of FIG. 1B, a deposition mask 10a having an opening 11a is used only for the first pixel 4a corresponding to the light-emitting layer 13a of one of the three colors. For the second pixel 4b and the third pixel 4c, for which the light-emitting layer 13a is not deposited in this step, the openings in the lift-off layer 8 are covered by the deposition mask 10a.

[0018] When the opening width of the opening 11a of the vapor deposition mask 10a on the surface facing the lift-off layer 8 is a and the opening width of the opening on the top surface of the lift-off layer 8 is c, it is preferable that the relationship a > c holds. By satisfying this relationship, it becomes possible to deposit the light-emitting layer 13a on pixels 4a smaller than the opening 11a of the vapor deposition mask 10a. Furthermore, when the width of the top surface of the lift-off layer 8 is b, it is preferable that the relationship a < 2b + c holds. By satisfying this relationship, it is possible to prevent the light-emitting layer 13a from being deposited on the second pixel 4b and the third pixel 4c during the process of depositing the light-emitting layer 13a on the first pixel 4a. This allows the light-emitting layer 13a to be deposited on pixels 4a smaller than the size of the opening 11a of the vapor deposition mask 10a, enabling high-resolution pixels. The above relationships a, b, and c also hold true for the vapor deposition masks 10b and 10c used when depositing the light-emitting layers 13b and 13c on the pixels 4b and 4c, as described below.

[0019] Next, as shown in FIG. 1C , a vapor deposition mask 10a is placed in contact with the upper surface 12 of the lift-off layer 8, and a first light-emitting layer 13a is vapor-deposited. Next, as shown in FIG. 1D , a vapor deposition mask 10b is placed so that its opening 11b is positioned over the opening of the lift-off layer 8 on the second pixel 4b, and the vapor deposition mask 10b is placed in contact with the upper surface 12 of the lift-off layer 8, and a second light-emitting layer 13b is vapor-deposited. Furthermore, as shown in FIG. 2A , a vapor deposition mask 10c is placed so that its opening 11c is positioned over the opening of the lift-off layer 8 on the third pixel 4c, and the vapor deposition mask 10c is placed in contact with the upper surface 12 of the lift-off layer 8, and a third light-emitting layer 13c is vapor-deposited. In this manner, the light-emitting layers 13a to 13c are vapor-deposited on the bottom electrodes 2 of the pixels 4a to 4c. During deposition of the light-emitting layers 13a to 13c, the light-emitting layers 13a to 13c are also deposited on the upper surface 12 of the lift-off layer 8 exposed through the openings 11a to 11c of the deposition masks 10a to 10c. The order of deposition of the light-emitting layers 13a to 13c is not limited to this.

[0020] (Step 3) Next, an upper electrode material is vapor-deposited without using a vapor deposition mask, thereby laminating an upper electrode 14 on the light-emitting layers 13a to 13c, as shown in FIG. 2B. Finally, as shown in FIG. 2C, the vapor-deposited layer vapor-deposited on the lift-off layer 8 is peeled off from the substrate 1 together with the lift-off layer 8. The peeling is preferably performed by a wet process. Specifically, it is preferable to use a remover (resist stripper) that can dissolve the lift-off layer 8. The remover is selected from those that do not dissolve the vapor-deposited light-emitting layers 13a to 13c.

[0021] The lift-off layer 8 is dissolved by the remover, and the vapor-deposited layer deposited on the lift-off layer 8 is peeled off from the substrate 1 together with the lift-off layer 8. In this way, a three-color light-emitting device is obtained, which is provided with light-emitting layers 13a to 13c of different luminescent colors. As described above, in this embodiment, photolithography is performed only once, so that the light-emitting layers 13a to 13c only come into contact with the remover once, which also has the effect of suppressing a decrease in the luminous life.

[0022] In this embodiment, the procedure for depositing the upper electrode 14 on the light-emitting layers 13a to 13c before peeling the lift-off layer 8 from the substrate 1 has been described. However, if the upper electrode 14 is deposited after peeling off the lift-off layer 8, it is also possible to provide a continuous upper electrode 14 on the light-emitting layers 13a to 13c and the insulating layer 3.

[0023] [Components] The components used in the light emitting device according to this embodiment and the method for manufacturing the same will be described below.

[0024] (Substrate) The substrate 1 used in this embodiment can be a transparent glass substrate such as quartz glass, Pyrex (registered trademark) glass, or a synthetic quartz plate, or a transparent flexible substrate such as a transparent resin film or an optical resin film. Among these, a glass substrate made of alkali-free glass, which does not contain any alkali components, is preferably used. Specifically, Corning's "7059 Glass," "1737 Glass," "Eagle 200 (registered trademark)," and "Eagle XG (registered trademark)," Asahi Glass Co., Ltd.'s "AN100," and Nippon Electric Glass Co., Ltd.'s "OA-10G" and "OA-11" are preferred. These materials have a low coefficient of thermal expansion and are excellent in dimensional stability and workability during high-temperature heat treatment. Furthermore, the substrate 1 is an insulating substrate on which a control circuit (not shown) consisting of switching elements such as transistors and MIM elements for controlling the light emission of the light-emitting layers 13a to 13c is formed. The substrate 1 may have a planarization film for planarizing the unevenness of the switching elements.

[0025] (Lower Electrode) The preferred materials for the cathode and anode of the lower electrode 2 used in this embodiment differ depending on whether the device is bottom-emission or top-emission. In bottom-emission devices, the anode is preferably a transparent electrode with a large work function. For example, materials such as ITO, ZnO, InZnO, and InGaZnO can be used as the transparent conductive oxide layer, but they are not limited to these. For top-emission anodes, transparency is not necessarily required because light is emitted from the top of the device. Metal anode materials that aid electron injection and do not interfere with light emission, such as Ag, Al, and Cu, are preferred. However, metal layers made of metals such as Cr, Ti, Mo, W, Au, Mg, and Cs, or alloys thereof, can also be used. The lower electrode 2 may be a laminated film of a transparent conductive oxide layer and a metal layer, or a laminated film of multiple metal layers.

[0026] (Insulating Layer) The insulating layer 3 can be made of either resin or metal, and is preferably a light-shielding layer. When used as a light-shielding layer, a light-transmitting resin containing a light-shielding material such as carbon black may be used. Commercially available black resists may also be used, such as "CFPR BK" manufactured by Tokyo Ohka Kogyo Co., Ltd., "V-259BKIS" manufactured by Nippon Steel Chemical & Material Co., Ltd., or "CK-7001" manufactured by Fujifilm Electronic Materials Co., Ltd. The reflection density of the insulating layer 3 is preferably 3 or more, and is preferably 4.5 or more when used in higher-quality display elements.

[0027] (Lift-off layer) The lift-off layer 8 is selected from materials that can be dissolved in common organic solvents. If a lift-off resist is used, the lift-off layer 8 can be formed with high-precision dimensions by photolithography. When forming the lift-off layer by photolithography, known coating methods such as spin coating, gravure coating, bar coating, spraying, dipping, and die coating can be used as the coating method for the lift-off resist.

[0028] Before applying the lift-off resist, it is preferable to treat the application surface, i.e., in this embodiment, the upper surface of the insulating layer 3, with a silane coupling agent. By performing the silane coupling agent treatment, even a fine lift-off layer is prevented from being chipped off during development. Furthermore, if an alkaline developer is used as the developer, residue is less likely to remain. If a lift-off resist that already contains a silane coupling agent is used, the silane coupling agent treatment is not necessary.

[0029] Examples of silane coupling agents that can be used include, but are not limited to, hexamethyldisilazane, γ-(2-aminoethyl)aminopropyltrimethoxysilane, γ-(2-aminoethyl)aminopropylmethyldimethoxysilane, γ-methacryloxypropyltrimethoxysilane, N-β-(N-vinylbenzylaminoethyl)γ-aminopropyltrimethoxysilane hydrochloride, methyltrimethoxysilane, butyltrimethoxysilane, isobutyltrimethoxysilane, hexyltrimethoxysilane, octyltrimethoxysilane, decyltrimethoxysilane, dodecyltrimethoxysilane, phenyltrimethoxysilane, o-methylphenyltrimethoxysilane, and p-methylphenyltrimethoxysilane.

[0030] As the lift-off resist, "ZPN1150" and "PN 1100" manufactured by Nippon Zeon, "SIPR9691" manufactured by Shin-Etsu Chemical, "TLOR-N001PM" manufactured by Tokyo Ohka Kogyo Co., Ltd., "PFI-38A7" manufactured by Sumitomo Chemical Co., Ltd., and the like can be used.

[0031] The exposure device used for exposure is not particularly limited, and known exposure devices can be used. Examples of exposure light include known ones such as carbon arc lamps, mercury vapor arc lamps, high-pressure mercury lamps (g-line (436 nm), h-line (405 nm), i-line (365 nm)), xenon lamps, YAG lasers, Ar ion lasers, semiconductor lasers, F2 excimer lasers (157 nm), ArF excimer lasers (193 nm), and KrF excimer lasers (248 nm). The exposure light may be appropriately selected according to the photosensitive wavelength of the photoresist used. Examples of exposure devices that can be used include projection exposure devices with a single wavelength light source, such as an i-line exposure stepper or a KrF stepper, and projection exposure devices with a broad wavelength light source, such as a mercury lamp, such as Canon's mask aligner "MPA-600Super."

[0032] The developer to be used is not particularly limited, and examples thereof include alkaline aqueous solutions of sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, tetramethylammonium hydroxide (TMAH), etc. On the upper surface of the insulating layer 3 exposed from the lift-off layer 8, the silane coupling agent is generally easily removed by an alkaline developer, just as silica is easily dissolved in an alkaline aqueous solution.

[0033] (Vapor Deposition Mask) The vapor deposition masks 10a to 10c used in the present invention can be made of copper, nickel, stainless steel, iron-nickel alloy, or resins such as INVER or polyimide, but are not limited to these. A plate thickness of 0.025 to 0.1 mm and a minimum opening dimension of approximately 30 μm for the openings 11a to 11c provide good dimensional accuracy, but the minimum dimension may be less than 30 μm if the openings 11a to 11c can be formed by a processing method. The cross-sectional shape (thickness direction of the substrate 1) of the openings 11a to 11c can be vertical, forward tapered, reverse tapered, or a combination thereof, but is not limited to these. The same applies to the vapor deposition masks used for vapor deposition of layers other than the light-emitting layer in the examples described below.

[0034] (Light-emitting layer) The light-emitting layers 13 a to 13 c used in this embodiment are not limited as long as they can be driven using a switching element. When the light-emitting layers are organic electroluminescence (EL) light-emitting layers, fluorescent materials and phosphorescent materials can be used as the light-emitting material contained in the light-emitting layers, and one or more of these may be used in combination.

[0035] Examples of fluorescent materials for red emission include perylene derivatives, europium complexes, porphyrin derivatives, benzothioxanthene derivatives, benzopyran derivatives, and rhodamine derivatives. Examples of fluorescent materials for green emission include fluororhenium compounds, fluorescein compounds, coumarin derivatives, quinacridone and its derivatives, anthracene compounds, and thiadiazole compounds. Examples of fluorescent materials for blue emission include carbazole compounds, cyanide compounds, fluorene compounds, distyrylamine derivatives such as distyryldiamine compounds, fluoranthene derivatives, pyrene derivatives, perylene and perylene derivatives, anthracene derivatives, benzoxazole derivatives, benzothiazole derivatives, benzimidazole derivatives, chrysene derivatives, phenanthrene derivatives, and distyrylbenzene derivatives.

[0036] The phosphorescent material is not particularly limited as long as it emits phosphorescence. For example, in the case of green emission, metal complexes of iridium, ruthenium, platinum, osmium, rhenium, palladium, aluminum, etc., carbazole compounds, anthracene compounds, etc. are listed. In the case of red emission, metal complexes of iridium, platinum, palladium, ruthenium, rhenium, osmium, etc. are listed. In the case of blue emission, metal complexes of iridium, ruthenium, platinum, osmium, rhenium, palladium, etc. can be used.

[0037] In addition to the above-described light-emitting materials, the light-emitting layers 13 a to 13 c may contain a host material to which the light-emitting material is added as a guest material. The host material recombines holes and electrons to generate excitons, and transfers the energy of the excitons to the light-emitting material, exciting it. When such a host material is used, the light-emitting material as the guest material is doped into the host material as a dopant.

[0038] The host material is appropriately selected depending on the light-emitting material to be used. Examples of the host material include anthracene derivatives, naphthalene derivatives, perylene derivatives, quinoline derivatives, distyrylarylene derivatives, distyrylbenzene derivatives, triarylamine derivatives, distyrylamine derivatives, quinolinolato metal complexes, silole derivatives, oxadiazole derivatives, oligothiophene derivatives, benzopyran derivatives, dicarbazole derivatives, triazole derivatives, benzoxazole derivatives, benzothiazole derivatives, and phosphorus derivatives. One or more of these may be used in combination. The amount of the light-emitting material doped into the host material may be appropriately selected based on the light-emitting efficiency, etc., and is preferably about 0.01% by mass to 10% by mass.

[0039] Although the organic EL light-emitting device has been described above, an inorganic EL light-emitting device can be constructed by replacing the light-emitting material with a compound semiconductor or a perovskite compound.

[0040] Compound semiconductors for red light emission include, for example, SrSe, SrSeBa, and Sr ３ (P.O. ４ ) ２ For blue light emission, for example, ZnSe and ZnSe-doped compounds can be used, and CdSe and ZnO can also be used as blue light-emitting materials by doping. For green light emission, CdZn, SeS, and ZnSe can be used as green light-emitting materials by doping and controlling impurities.

[0041] The perovskite compound has a perovskite-type crystal structure composed of A, B, and X. The perovskite compound composed of A, B, and X is not particularly limited, and may be a compound having any of a three-dimensional structure, a two-dimensional structure, and a pseudo-two-dimensional structure. In the case of a three-dimensional structure, the perovskite compound is an ABX ３ In the case of a two-dimensional structure, ２ BX ４ It is expressed as:

[0042] ABX ３Specific examples of perovskite compounds having a three-dimensional structure represented by the formula: CsPbBr ３ , CsPbCl ３ , CsPbI ３ , CsPbBr （３－ｙ） I ｙ (0<y<3), CsPbBr （３－ｙ） Cl ｙ (0<y<3), FAPbBr ３ , FAPbCl ３ , FAPbI ３ , FAPbBr （３－ｙ） I ｙ (0<y<3), FAPbBr （３－ｙ） Cl ｙ (0<y<3), FAPbBr （３－ｙ） Cl ｙ (0<y<3), MAPbBr ３ , MAPbCl ３ , MAPbI ３ , MAPbBr （３－ｙ） Iy (0<y<3), MAPbBr （３－ｙ） Cl ｙ (0<y<3).

[0043] A ２ BX ４ Preferred examples of the two-dimensional perovskite compound represented by the formula: ２ PbBr ４ , Cs ２ PbCl ４ , Cs ２ PbI ４ , Cs ２ PbBr （４－ｙ） I ｙ (0<y<4), Cs ２ PbBr （４－ｙ） Cl ｙ (0<y<4), F.A. ２ PbBr ４ , F.A. ２ PbCl ４ , F.A. ２ PbI ４ , F.A. ２ PbBr （４－ｙ） I ｙ (0<y<4), F.A. ２ PbBr （４－ｙ） Cl ｙ (0<y<4), F.A.２ PbBr （４－ｙ） Cl ｙ (0<y<4), MA ２ PbBr ４ , M.A. ２ PbCl ４ , M.A. ２ PbI ４ , M.A. ２ PbBr （４－ｙ） I ｙ (0<y<4), MA ２ PbBr （４－ｙ） Cly (0<y<4) can be given.

[0044] In the above description, "FA" means formamidinium, and "MA" means methylammonium.

[0045] Furthermore, perovskite compounds doped with Eu, Gd, Yb, Mn, Ce, Bi, Sm, Ho, or Tb may also be used.

[0046] (Organic Compound Layers Other Than Light-Emitting Layer) In this embodiment, when the light-emitting layer is an organic EL light-emitting layer, a laminated structure similar to that of a general organic EL light-emitting device can be formed between the light-emitting layers 13a to 13c and the lower electrode 2 or between the light-emitting layers 13a to 13c and the upper electrode 14. Specifically, a multi-layer structure such as a hole injection layer / hole transport layer / light-emitting layer / electron transport layer / electron injection layer can be formed. In addition, an electron blocking layer, an adhesion improving layer, etc. may also be inserted.

[0047] In this embodiment, depositing the light-emitting layers 13 a to 13 c on the lower electrode 2 by vapor deposition means depositing the light-emitting layers 13 a to 13 c on the lower electrode 2 through multiple layers such as a hole injection layer / hole transport layer or an electron transport layer / electron injection layer, even if the light-emitting layers 13 a to 13 c are not in direct contact with the lower electrode 2.

[0048] In this embodiment, if the layers other than the light-emitting layers 13a to 13c use a common material for the pixels 4a to 4c, the lift-off layer 8 may be deposited without using the deposition masks 10a to 10c. If different materials are used for the pixels 4a to 4c, the lift-off layer 8 may be deposited using the deposition masks 10a to 10c having openings 11a to 11c corresponding to each light-emitting layer, as in the deposition of the light-emitting layers 13a to 13c.

[0049] Examples of the hole injection layer used in this embodiment include arylamines, phthalocyanines, and Lewis acid-doped organic layers. Examples of the hole transport layer include arylamines. Examples of materials that can be used for the hole transport layer include phthalocyanine derivatives, triphenyldiamine derivatives, oxodiazole derivatives, polyphyllyl derivatives, and stilbene derivatives. Other examples include oxides such as molybdenum oxide and tungsten oxide, and mixtures thereof. The hole transport layer is composed of a single layer or multiple layers of an organic compound having hole injection and hole transport properties. The hole transport layer and electron transport layer may also function as exciton blocking layers to suppress the diffusion of excitons generated in the light-emitting layers 13a to 13c.

[0050] Examples of the electron injection layer used in this embodiment include alkali metals, alkaline earth metals, and their compounds, as well as organic layers doped with alkali metals. Examples of the electron transport layer used in this embodiment include aluminum complexes, oxadiazoles, phenanthrolines, and triazoles. Examples of materials used for the electron transport layer include phenylquinoxaline derivatives, oxadiazole derivatives, aluminumquinolinol derivatives, triazole derivatives, silole derivatives, and phenanthroline derivatives. Other materials that can be used for the electron transport layer include alkali metals, alkaline earth metals, rare earth metals, and compounds thereof. One or more of these may be used in combination. The electron transport layer may comprise a single layer or multiple layers of an organic compound having electron injection and electron transport properties. The electron transport layer may also function as a hole blocking layer.

[0051] When the light-emitting device of this embodiment is a tandem or stacked type in which two or more light-emitting layers are stacked, the charge-generating layer (CGL) interposed between the two light-emitting layers functions as an intermediate electrode and plays an important role in performance. It consists of an n-doped layer and a p-doped layer for electron and hole injection, respectively. Electrons and holes are supplied from the CGL and the electrode. Consumed electrons and holes in the CGL are replenished by electrons and holes injected from the cathode and anode, respectively, until the bipolar current gradually reaches a steady state. Typical CGL materials include n-type and p-type conductive dopants used in the transport layers. Tandem or stacked organic EL light-emitting devices have two or more light-emitting layers in the same pixel. In such embodiments, the light-emitting layers in the same pixel do not necessarily have to emit the same color.

[0052] Examples of materials for the charge generation layer include LiO2, Li / V2O5, Cs2CO3, and mixtures of these composite oxides. The metal-doped layer is not limited to these materials, and may be made of, for example, Ca, Ba, alkaline earth metals, alkali metals such as lithium and cesium, metals with a small work function such as In and Mg, or mixtures or alloys of oxides, composite oxides, and fluorides of these metals to enhance stability.

[0053] (Upper Electrode) An upper electrode 14 is formed on the light-emitting layers 13a and 13b. The preferred materials for the cathode and anode of the upper electrode 14 used in this embodiment differ depending on whether it is a bottom-emission type or a top-emission type. For a top-emission type, it must be transparent. ITO, ZnO, FTO, InGaZn, In—Zn—O, and InGaZnO-based materials can also be used as transparent electrodes. Furthermore, an alloy doped with an alkali metal or alkaline earth metal can also be used as the upper electrode 14.

[0054] In the case of bottom emission type, it is not necessary for the anode to be transparent, and Al, Au alloy, Pt alloy, etc., which have a large work function, can be used for the anode, and Ag-added Mg, Li-added Al, silicide, boride, nitride, etc. can be used for the cathode.

[0055] (Other Components) A protective layer, a color filter, a microlens, etc. may be provided on the upper electrode. When a color filter is provided, a planarizing layer may be provided between the protective layer and the color filter. The planarizing layer may be made of an acrylic resin or the like. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0056] A protective layer may be provided on the second electrode. For example, by adhering glass with a moisture absorbent on the second electrode, the intrusion of water and other contaminants into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation film such as silicon nitride may be provided on the second electrode to reduce the intrusion of water and other contaminants into the organic compound layer. For example, after forming the second electrode, the second electrode may be transferred to another chamber without breaking the vacuum, and a 2 μm-thick silicon nitride film may be formed by CVD to serve as a protective layer. A protective layer may be provided using atomic layer deposition (ALD) after the CVD film formation. The material of the film formed by ALD is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed on the film formed by ALD by CVD. The film formed by ALD may have a thickness smaller than that of the film formed by CVD. Specifically, it may be 50% or less, or even 10% or less.

[0057] A planarization layer may be provided between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the underlying layer. It may also be called a material resin layer without limiting its purpose. The planarization layer may be composed of an organic compound, and may be either a low molecular weight or a high molecular weight, but a high molecular weight is preferred.

[0058] The planarizing layer may be provided above or below the color filter, and may be made of the same or different materials, such as polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0059] An organic light-emitting element or an organic light-emitting device having the organic light-emitting element may have an optical component such as a microlens on its light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be intended to increase the amount of light extracted from the organic light-emitting element or organic light-emitting device or to control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be determined in the same way in any cross-sectional view. In other words, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the semicircle is the vertex of the microlens.

[0060] It is also possible to define the midpoint of a microlens. In the cross section of the microlens, a line segment is imagined from the point where an arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0061] (Remover) The silane coupling agent interposed between the lift-off layer 8 and the insulating layer 3 is difficult to dissolve in the remover, and therefore remains on the insulating layer 3 after the lift-off layer 8 is removed. For this reason, when the upper surface of the insulating layer 3 is treated with a silane coupling agent, portions that do not contain silicon compounds and portions that contain silicon compounds are generated on the upper surface of the insulating layer 3. The silane coupling agent remaining on the insulating layer 3 has a terminal structure, and therefore does not easily form bonds with the silicon oxide film or silicon nitride film used as a sealing film, and the adhesion between the insulating layer 3 and these sealing films is low; however, because there are portions on the insulating layer 3 that do not contain silicon compounds, adhesion to the sealing film is easily ensured in these portions.

[0062] Examples of removers used in this embodiment include dimethyl sulfoxide, dimethylimidazolidinone, sulfolane, N-methyl-2-pyrrolidone, dimethylformamide, acetonitrile, acetone, dioxane, tetramethylurea, hexamethylphosphoramide, hexamethylphosphorotriamide, pyridine, propionitrile, butanone, cyclohexanone, tetrahydrofuran, tetrahydropyran, ethylene glycol diacetate, γ-butyrolactone, ethanolamine, methanol, ethanol, and 2-propanol, and these can be used alone or in combination of two or more.

[0063] [Use of Light-Emitting Device] The light-emitting device of this embodiment can be used as a component of a display device or a lighting device.

[0064] The display device may be an image information processing device that has an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., has an information processing unit that processes the input information, and displays the input image on a display unit. The display device may have a plurality of pixels and transistors connected to the plurality of pixels.

[0065] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0066] Next, the display device according to this embodiment will be described with reference to the drawings.

[0067] The display device of FIG. 5 includes an organic light-emitting element (organic EL light-emitting element) 126 and a TFT 118 as an example of a transistor. Specifically, a substrate 111 made of glass, silicon, or the like is provided with an insulating layer 112 thereon. A TFT 118 having a gate electrode 113, a gate insulating film 114, a semiconductor layer 115, a drain electrode 116, and a source electrode 117 is disposed on the insulating layer 112. An insulating film 119 is provided on top of the TFT 118, and an anode 121 and source electrode 117 constituting the organic light-emitting element 126 are connected via a contact hole 120 provided in the insulating film 119. The organic light-emitting element 126 includes an anode 121, an organic compound layer 122, and a cathode 123. The organic compound layer 122 includes one of the light-emitting layers 13a to 13c shown in FIGS. 1A to 1D and 2A to 2C. The insulating layer 3 is not shown in FIG. 5.

[0068] The electrical connection method between the electrodes (anode 121, cathode 123) included in the organic light-emitting element 126 and the electrodes (source electrode 117, drain electrode 116) included in the TFT 118 is not limited to the mode shown in Fig. 5. In other words, it is sufficient that either the anode 121 or the cathode 123 is electrically connected to either the source electrode 117 or the drain electrode 116. The TFT 118 refers to a thin film transistor.

[0069] A first protective layer 124 and a second protective layer 125 are provided on the cathode 123 to reduce deterioration of the organic light emitting element 126 .

[0070] The organic light emitting element 126 according to this embodiment has its light emission brightness controlled by the TFT 118, and by providing a plurality of organic light emitting elements 126 on a surface, an image can be displayed with the respective light emission brightnesses.

[0071] In the display device of FIG. 5, transistors are used as switching elements, but other switching elements may be used instead.

[0072] 5 is not limited to a TFT having an active layer on an insulating surface of a substrate, but may be a transistor using a single-crystal silicon wafer. The active layer may be made of non-single-crystal silicon such as amorphous silicon or microcrystalline silicon, or a non-single-crystal oxide semiconductor such as indium zinc oxide or indium gallium zinc oxide.

[0073] Alternatively, the transistor may be formed from low-temperature polysilicon, or an active matrix driver may be formed on a substrate such as a Si substrate. "On a substrate" can also be referred to as "inside the substrate." Whether to provide a transistor in the substrate or use a TFT is determined by the size of the display unit. For example, for a display unit of about 0.5 inches, it is preferable to provide an organic light-emitting element on a Si substrate. "Formed within the substrate" here means that the substrate itself, such as a Si substrate, is processed to form the transistor. In other words, having a transistor within a substrate can be considered as the substrate and the transistor being integrally formed.

[0074] 6 is a schematic diagram showing an example of a display device according to this embodiment. The display device 1000 has a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. The touch panel 1003 and the display panel 1005 are connected to flexible printed circuits FPCs 1002 and 1004. Transistors are printed on the circuit board 1007. The battery 1008 may not be provided if the display device is not a portable device, and may be provided in a different position even if the display device is a portable device. The light-emitting device according to this embodiment is used for the display panel 1005.

[0075] The display device according to the present embodiment is used as a display unit of a mobile terminal. In this case, the display device may have both a display function and an operation function. Examples of the mobile terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0076] The display device according to this embodiment is used in a display unit of an imaging device having an optical unit with multiple lenses and an imaging element that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the imaging device or a display unit located within the viewfinder. The imaging device may be a digital camera or a digital video camera.

[0077] 7A is a schematic diagram showing an example of an imaging device according to the present invention. The imaging device 1100 has a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The rear display 1102 uses a light-emitting device according to this embodiment. The display device may display not only an image to be captured, but also environmental information, imaging instructions, etc. The environmental information may include the intensity of external light, the direction of external light, the speed at which the subject is moving, the possibility that the subject will be blocked by an obstruction, etc.

[0078] Since the optimum timing for capturing an image is very short, it is better to display information as quickly as possible. Therefore, it is preferable to use a display device that uses an organic EL light-emitting layer as the light-emitting layer. This is because the organic EL light-emitting layer has a fast response speed. A display device that uses an organic EL light-emitting layer can be used more preferably than a liquid crystal display device, which requires a high display speed.

[0079] The imaging device 1100 has an optical section (not shown). The optical section has multiple lenses, which form an image on an imaging element housed in a housing 1104. The focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically. The imaging device may also be called a photoelectric conversion device. Instead of sequentially capturing images, the photoelectric conversion device may include an imaging method that detects the difference from the previous image, or a method of cutting out an image that is constantly being recorded.

[0080] FIG. 7B is a schematic diagram showing an example of an electronic device according to this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 has a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The display unit 1201 has a light-emitting device according to this embodiment. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit may be a biometric recognition unit that recognizes a fingerprint to unlock the device, etc. An electronic device having a communication unit can also be called a communication device. The electronic device may further have a camera function by including a lens and an image sensor. An image captured by the camera function is displayed on the display unit. Examples of the electronic device include a smartphone and a laptop computer.

[0081] 8A and 8B are schematic diagrams illustrating an example of a display device according to this embodiment. FIG. 8A illustrates a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The display unit 1302 uses the light-emitting device according to this embodiment. The display device 1300 includes the frame 1301 and a base 1303 that supports the display unit 1302. The base 1303 is not limited to the form shown in FIG. 8A . The lower side of the frame 1301 may also serve as the base. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0082] FIG. 8B is a schematic diagram illustrating another example of a display device according to this embodiment. The display device 1310 in FIG. 8B is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The first display unit 1311 and the second display unit 1312 each have a light-emitting device according to this embodiment. The first display unit 1311 and the second display unit 1312 may be a single, seamless display unit. The first display unit 1311 and the second display unit 1312 can be separated by the bending point. The first display unit 1311 and the second display unit 1312 may each display different images, or the first and second display units may display a single image.

[0083] 9A is a schematic diagram illustrating an example of an illumination device according to this embodiment. The illumination device 1400 includes a housing 1401, a light source 1402, a circuit board 1403, an optical filter 1404, and a light diffusion unit 1405. The light source 1402 includes a light-emitting device according to this embodiment. The optical filter 1404 may be a filter that improves the color rendering of the light source. The light diffusion unit 1405 can effectively diffuse light from the light source 1402, such as for illumination, and deliver the light over a wide area. The optical filter 1404 and the light diffusion unit 1405 may be provided on the light output side of the illumination device. If necessary, a cover may be provided on the outermost surface.

[0084] The lighting device is, for example, a device that illuminates a room. The lighting device may emit white, daylight white, or any other color from blue to red. It may have a dimming circuit that dims these colors. The lighting device has a light-emitting device according to this embodiment and a power supply circuit connected to it. The power supply circuit is a circuit that converts AC voltage into DC voltage. Furthermore, white has a color temperature of 4200K, and daylight white has a color temperature of 5000K. The lighting device may have a color filter.

[0085] The lighting device according to this embodiment may also include a heat dissipation unit, which dissipates heat from within the device to the outside, and may be made of a material such as metal or liquid silicone with a high specific heat.

[0086] 9B is a schematic diagram of an automobile, which is an example of a moving body according to this embodiment. The automobile has tail lamps, which are an example of a lighting device. The automobile 1500 has tail lamps 1501, and may be configured to turn on the tail lamps when braking or the like is performed.

[0087] The tail lamp 1501 includes the light-emitting device according to this embodiment. The tail lamp 1501 may include a protective member for protecting the light-emitting device. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but it is preferable that the protective member be made of polycarbonate or the like. Polycarbonate may be mixed with a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like.

[0088] The automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a transparent display as long as it is not a window for checking the front and rear of the automobile. The transparent display has a light-emitting device according to this embodiment. In this case, the constituent materials of the electrodes and the like of the light-emitting device are made of transparent materials.

[0089] The moving body according to the present invention may be a ship, an aircraft, a drone, or the like. The moving body has a body and a lighting device provided on the body. The lighting device emits light to indicate the position of the body. The lighting device has the light-emitting device according to the present embodiment.

[0090] An application example of the display device of each of the above-described embodiments will be described with reference to Fig. 10. The display device can be applied to a system that can be attached as a wearable device, such as smart glasses, an HMD, or a smart contact lens. The image capturing and display device used in such an application example includes an image capturing device capable of photoelectrically converting visible light and a display device capable of emitting visible light.

[0091] 10A illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, the display device according to the above-described embodiment is provided on the back side of the lens 1601.

[0092] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the display device according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the display device. The lens 1601 is formed with an optical system for focusing light onto the image capture device 1602.

[0093] FIG. 10B illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 include a control device 1612, which is equipped with an imaging device corresponding to the imaging device 1602 in FIG. 10A and a display device. A lens 1611 includes an optical system for projecting light emitted from the imaging device and the display device within the control device 1612, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the imaging device and the display device and controls the operation of the imaging device and the display device. The control device 1612 may also include a gaze detection unit for detecting the wearer's gaze. Infrared light may be used for gaze detection. The infrared light emitter emits infrared light toward the eyeball of a user gazing at a displayed image. An imaging unit with a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. A reduction unit for reducing light from the infrared light emitter to the display unit in a planar view reduces degradation of image quality.

[0094] The user's line of sight with respect to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be applied to gaze detection using an image of the eyeball. As an example, a gaze detection method based on a Purkinje image formed by reflection of irradiated light on the cornea can be used. More specifically, gaze detection processing is performed based on the pupil-corneal reflex method. Using the pupil-corneal reflex method, a gaze vector representing the direction (rotation angle) of the eyeball is calculated based on the image of the pupil and the Purkinje image included in the image of the eyeball, thereby detecting the user's gaze.

[0095] The display device according to this embodiment may include an imaging device having a light receiving element, and may control the display image of the display device based on the user's line of sight information from the imaging device. Specifically, the display device determines a first field of view area where the user gazes and a second field of view area other than the first field of view area based on the line of sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be received from an external control device. In the display area of ​​the display device, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0096] The display area includes a first display area and a second display area different from the first display area, and a high-priority area is determined from the first display area and the second display area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0097] Note that AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from the image of the eyeball, using as training data an image of the eyeball and the direction in which the eyeball in the image was actually looking. The AI ​​program may be included in the display device, the imaging device, or an external device. If included in the external device, it is transmitted to the display device via communication.

[0098] When display control is performed based on visual recognition detection, the smart glasses can be preferably applied to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured external information in real time.

[0099] Example 1 In this example, a bottom-emission organic EL light-emitting device was manufactured according to the steps illustrated in FIGS. 1A to 1D and 2A to 2C.

[0100] The substrate 1 was made of non-alkali glass, and a control circuit (not shown) for controlling light emission, consisting of transistor switching elements, etc., was formed on the insulating substrate. ITO was used for the lower electrodes 2, and 20 μm × 70 μm patterns were arranged at 4 μm intervals. An insulating layer 3 made of black resist with a width of 5 μm and a height of 1 μm was formed between the patterned lower electrodes 2.

[0101] The insulating layer 3 was treated with a silane coupling agent such as hexamethyldisilazane, and then a lift-off resist was applied thereto, and a lift-off layer 8 was formed by photolithography using an alkaline developer as the developer.

[0102] The lift-off layer 8 has a height of 3 μm, a bottom surface where it is attached to the insulating layer 3 (A in FIGS. 3A to 3D) of 4 μm in width, and an upper surface of a 6 μm wide inverted tapered shape (FIG. 3A), with an opening of 19 μm×69 μm. The opening of the lift-off layer 8 was positioned so as to be located above the pixels 4 a to 4 c.

[0103] In this embodiment, a silane coupling agent is interposed between the lift-off layer 8 and the insulating layer 3, thereby fixing the lift-off layer 8 to the insulating layer 3. The silane coupling agent is removed from the upper surface of the insulating layer 3 exposed from the lift-off layer 8 using an alkaline developer.

[0104] In the state of FIG. 1A, a hole injection layer / hole transport layer (not shown) was simultaneously vapor-deposited in the pixels 4a to 4c using the lift-off layer 8 as a mask.

[0105] Next, as shown in FIG. 1B , a vapor deposition mask 10a having an opening 11a was placed over the opening of the lift-off layer 8 of the first pixel 4a. The vapor deposition mask 10a had an opening 11a measuring 29 μm × 79 μm. The opening width a of the opening 11a on the surface of the vapor deposition mask 10a facing the lift-off layer 8 was 29 μm on the short side and 70 μm on the long side. The opening width c of the opening on the top surface 12 of the lift-off layer 8 was 19 μm on the short side and 69 μm on the long side, such that both the long and short sides had a > c relationship. Furthermore, since the width b of the top surface 12 of the lift-off layer 8 was 6 μm, the relationship a < 2b + c was satisfied. In this state, as shown in FIG. 1C , a green light-emitting material was vapor-deposited to form a green light-emitting layer as the first light-emitting layer 13a on the bottom electrode 2 of the first pixel 4a via a hole injection layer / hole transport layer (not shown).

[0106] 1D , a vapor deposition mask 10b having an opening 11b was placed on the opening of the lift-off layer 8 of the second pixel 4b, and in this state, a red light-emitting material was vapor-deposited to form a red light-emitting layer as the second light-emitting layer 13b on the lower electrode 2 via a hole injection layer / hole transport layer (not shown). The size of the opening 11b is the same as that of the opening 11a.

[0107] 2A , a vapor deposition mask 10c having an opening 11c was placed on the opening of the lift-off layer 8 of the third pixel 4c, and in this state, a blue light-emitting material was vapor-deposited to form a blue light-emitting layer as the third light-emitting layer 13c on the lower electrode 2 via a hole injection layer / hole transport layer (not shown). The size of the opening 11c is the same as that of the opening 11a.

[0108] The deposition mask 10c on the lift-off layer 8 was removed, and an electron transport layer and an electron injection layer (not shown), and an upper electrode 14 were deposited in this order on all of the pixels 4a to 4c using the lift-off layer 8 as a mask. Al / LiF was used for the upper electrode 14.

[0109] Next, the lift-off layer 8 was dissolved using N-methyl-2-pyrrolidone as a remover. Because the electron transport layer / electron injection layer (not shown) and upper electrode 14 are present on the emitting layers 13a to 13c in the pixels 4a to 4c, the emitting layers 13a to 13c were not in contact with the remover. Furthermore, the silane coupling agent 16 interposed between the lift-off layer 8 and the insulating layer 3 was difficult to dissolve in the remover and remained on the insulating layer 3. As a result, the upper surface of the insulating layer 3 was divided into areas that did not contain silicon compounds and areas that contained silicon compounds. The deposited material on the lift-off layer 8 was lifted off, and an organic EL light-emitting device was manufactured, including a first emitting layer 13a that emits green light, a second emitting layer 13b that emits red light, and a third emitting layer 13c that emits blue light.

[0110] Example 2 In this example, an organic EL light-emitting device similar to that in Example 1 was manufactured, except that different materials were used for the pixels 4a to 4c. Specifically, the hole injection layer / hole transport layer for the first pixel 4a and the second pixel 4b was vapor-deposited using a vapor deposition mask 10d having an opening 11d positioned over the opening of the lift-off layer 8 for the pixels 4a and 4b, as shown in FIG. 4A. The hole injection layer / hole transport layer for the third pixel 4c was vapor-deposited using a vapor deposition mask 10e having an opening 11e positioned over the opening of the lift-off layer 8 for the third pixel 4c, as shown in FIG. 4B. Note that reference numerals 15a and 15b in FIGS. 4A and 4B denote hole injection layers / hole transport layers having different configurations.

[0111] Example 3 A top-emission organic EL light-emitting device was manufactured in the same manner as in Example 1, except that an Ag layer was provided under the lower electrode and IZO (In-Zn-O) was provided as the upper electrode.

[0112] Example 4 In this example, an electron transport layer / electron injection layer was deposited on the light-emitting layers 13a to 13c in the pixels 4a to 4c, and then LiO was deposited as a charge generation layer. ２ Next, a hole injection layer / hole transport layer / light-emitting layers 13a to 13c / electron transport layer / electron injection layer / upper electrode were again deposited on the charge generation layer in the same manner as in Example 1, to produce a tandem organic EL light-emitting device in which two light-emitting layers were stacked in one pixel.

[0113] Example 5 A light-emitting device was manufactured in the same manner as in Example 1, except that the light-emitting layers 13a to 13c were made of inorganic EL materials. Specifically, the green light-emitting layer was made of a perovskite compound CsPbBr ３ The red light-emitting layer is a perovskite compound CsPbI ３ The blue light-emitting layer was made of ZnSe, a compound semiconductor.

[0114] Example 6 An organic EL light-emitting device was manufactured according to the manufacturing steps shown in FIGS. 1A to 1D and 2A to 2C. Alkali-free glass was used for the substrate 1, and a control circuit (not shown) consisting of switching elements such as transistors was formed on the substrate 1. Lower electrodes 2 made of ITO with a 20 μm × 70 μm pattern were arranged on the substrate 1 at 4 μm intervals. An insulating layer 3 made of black resist with a width of 5 μm and a height of 1 μm was formed between the lower electrodes 2. A hole transport layer / hole injection layer (not shown) was formed on the lower electrode 2, and a first light-emitting layer 13a emitting green light was deposited on the first pixel 4a, a second light-emitting layer 13b emitting red light was deposited on the second pixel 4b, and a third light-emitting layer 13c emitting blue light was deposited on the third pixel 4c. An electron injection layer / electron transport layer (not shown) was deposited on each of the light-emitting layers 13a to 13c, and Al / LiF was further deposited thereon as an upper electrode 14. The upper surface of the insulating layer 3 has a portion that does not contain silicon compounds and a portion that contains silicon compounds. After removing the lift-off layer 8, a sealing film (not shown) made of silicon oxide is provided continuously from the surface of the upper electrode 14 to the surface of the insulating layer 3. The sealing film and the portion of the upper surface of the insulating layer 3 that does not contain silicon compounds firmly adhere to each other, so the sealing properties of the sealing film are maintained.

[0115] The present invention is not limited to the above-described embodiments, and various modifications and variations can be made without departing from the spirit and scope of the present invention. Therefore, the following claims are appended to apprise the public of the scope of the present invention.

[0116] This application claims priority based on Japanese Patent Application No. 2024-016050, filed February 6, 2024, the entire contents of which are incorporated herein by reference.

[0117] REFERENCE SIGNS LIST 1 substrate 2 lower electrode 3 insulating layer 4a to 4c pixel 8 lift-off layer 10a to 10e deposition mask 11a to 11e opening 12 upper surface of lift-off layer 13a to 13c light-emitting layer 118 transistor 1200 electronic device 1201, 1302, 1311, 1312 display unit 1203 housing 1300, 1310 display device 1400 lighting device 1402 light source 1404 optical filter 1405 light diffusion unit

Claims

1. A method for manufacturing a light-emitting device having a substrate, a plurality of lower electrodes arranged on the substrate, an insulating layer covering the edges of the lower electrodes, a light-emitting layer arranged on the lower electrodes in pixels defined by the insulating layer, and an upper electrode facing the lower electrodes with the light-emitting layer sandwiched between them, the method comprising the steps of: preparing a substrate provided with the plurality of lower electrodes, the insulating layer covering the edges of the lower electrodes, and a lift-off layer having openings above the pixels defined by the insulating layer; vapor-depositing the light-emitting layer on the lower electrodes of the pixels; and peeling off the lift-off layer from the substrate, wherein the vapor deposition of the light-emitting layer is performed by placing a vapor deposition mask having openings over the openings in the lift-off layer.

2. The method for manufacturing a light-emitting device according to claim 1, wherein the insulating layer is a light-shielding layer.

3. The method for manufacturing a light-emitting device according to claim 1, characterized in that the light-emitting layer has a plurality of emission colors, the deposition of the light-emitting layer is carried out for each emission color, and the openings in the lift-off layer of the pixels of the light-emitting layer having an emission color different from that of the deposited light-emitting layer are covered with the deposition mask.

4. The method for manufacturing a light-emitting device according to claim 1, characterized in that, when the opening width of the vapor deposition mask on the surface facing the lift-off layer is a and the opening width of the opening on the top surface of the lift-off layer is c, the relationship a>c holds.

5. The method for manufacturing a light-emitting device according to claim 1, characterized in that, when the opening width of the vapor deposition mask on the surface facing the lift-off layer is a, the width of the upper surface of the lift-off layer is b, and the opening width of the opening on the upper surface of the lift-off layer is c, the relationship a<2b+c holds.

6. The method for manufacturing a light-emitting device according to claim 1, characterized in that, when A is the width of the lift-off layer at the portion where the side surface of the lift-off layer contacts the insulating layer and B is the maximum width of the lift-off layer, A<B.

7. The method for manufacturing a light-emitting device according to claim 1, wherein two or more light-emitting layers are formed in the same pixel.

8. The method for manufacturing a light-emitting device according to claim 1, wherein the light-emitting layer contains any one of an organic electroluminescent compound, a compound semiconductor, and a perovskite compound.

9. A light-emitting device comprising a substrate, a plurality of lower electrodes arranged on the substrate, an insulating layer covering the edges of the lower electrodes, a light-emitting layer arranged on the lower electrodes in pixels partitioned by the insulating layer, and an upper electrode facing the lower electrodes with the light-emitting layer sandwiched between them, wherein the light-emitting layer emits light of a plurality of colors, and wherein the upper surface of the insulating layer has a portion that does not contain a silicon compound and a portion that contains a silicon compound.

10. The light emitting device according to claim 9, wherein the insulating layer is a light-shielding layer.

11. The light emitting device of claim 9, wherein the light emitting layer comprises an organic electroluminescent compound.

12. A display device comprising the light-emitting device according to claim 9 and a transistor connected to each pixel of said light-emitting device.

13. A photoelectric conversion device comprising an optical section having a plurality of lenses, an imaging element that receives light that has passed through said optical section, and a display section that displays an image captured by said imaging element, wherein said display section comprises the light-emitting device according to claim 9.

14. An electronic device comprising: a display unit having the light-emitting device according to claim 9; a housing in which the display unit is provided; and a communication unit provided in the housing for communicating with the outside.

15. A lighting device comprising a light source having the light-emitting device according to claim 9, and a light diffusion section or optical filter that transmits light emitted by the light source.

16. A moving object comprising a lighting fixture having the light-emitting device according to claim 9 and a vehicle on which the lighting fixture is mounted.

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