Substrate processing apparatus

Abstract

Provided is a substrate processing apparatus comprising: a processing chamber in which a processing space for processing a substrate is provided; a support unit for supporting the substrate in the processing space; a plasma generation chamber which is provided outside the processing chamber, and which has a discharge space for generating plasma from processing gas; an adapter which is connected to the processing chamber and the plasma generation chamber, and which has a guide space for guiding, to the processing chamber, the plasma generated in the discharge space; and a baffle assembly disposed in the processing space or the guide space, or between the processing space and the guide space, wherein the baffle assembly includes: a baffle plate having a plurality of baffle holes by which the guide space communicates with the processing space; and an air flow guide body disposed below the baffle plate, and the air flow guide body has a guide plate which is positioned to be spaced apart from the baffle plate, and which is provided to laterally guide an air flow having passed through some of the baffle holes.

Description

Substrate processing device

[0001] The present invention relates to a substrate processing device, and more specifically, to a substrate processing device that processes a substrate using plasma.

[0002] Plasma is an ionized gaseous state composed of ions, radicals, and electrons. Plasma is generated by extremely high temperatures, strong electric fields, or radio-frequency electromagnetic fields (RF electromagnetic fields). Semiconductor device manufacturing processes often involve ashing or etching, which use plasma to remove thin films on substrates. These processes occur when ions and radical particles contained in the plasma collide with or react with the film on the substrate.

[0003] Fig. 1 shows an example of a remote plasma treatment device. Referring to Fig. 1, the remote plasma treatment device has a plasma generation chamber (21) and a treatment chamber (22), and plasma generated in the plasma generation chamber (21) passes through a baffle (23) and then flows into the treatment chamber (22).

[0004] In Fig. 1, the baffle (23) serves to evenly spray plasma onto the wafer (W1). Since the airflow (H1) passing through the baffle (23) flows downwardly and curves from the center of the wafer (W1) toward the edge due to the exhaust flow, the film removal rate is formed unevenly.

[0005] In order to improve the unevenness of the aforementioned film removal rate, various factors such as the hole formation area and hole size are considered when designing the baffle (23). However, it is difficult to significantly improve the uniformity of the aforementioned film removal rate solely by changing the location and size of the holes formed in the baffle (23).

[0006] The purpose of the present invention is to provide a substrate processing device capable of improving the uniformity of film removal rate when removing a thin film on a substrate using plasma.

[0007] In addition, the present invention aims to provide a substrate processing device capable of improving the non-uniformity of the film removal rate by region on the substrate due to the influence of the direction of the plasma airflow formed within the processing space.

[0008] The technical problems to be solved by the present invention are not limited thereto, and those skilled in the art will understand that other technical problems not mentioned can be derived from the configurations used in the specification and drawings below.

[0009] According to one embodiment, a substrate processing device of the present invention is a device for processing a substrate, comprising: a processing room having a processing space for processing a substrate therein; a support unit for supporting a substrate in the processing space; a plasma generation room provided outside the processing room and having a discharge space for generating plasma from a processing gas; an adapter connected to the processing room and the plasma generation room and having a guide space for guiding plasma generated in the discharge space to the processing room; and a baffle assembly disposed between the processing space, the guide space, or the processing space and the guide space, wherein the baffle assembly includes a baffle plate having a plurality of baffle holes formed therein for communicating the guide space and the processing space; and an airflow guide disposed below the baffle plate, wherein the airflow guide may have a guide plate positioned spaced apart from the baffle plate and provided to laterally guide airflow passing through some of the baffle holes.

[0010] In one embodiment, the guide plate may be provided parallel to the baffle plate.

[0011] In one embodiment, when viewed from above, the guide plate may be formed in a ring shape concentric with the central axis of the baffle plate.

[0012] In one embodiment, the airflow guide may further include a connecting body that connects the baffle plate and the guide plate and has an opening formed through the upper and lower directions.

[0013] In one embodiment, the guide plate may be positioned on the outside of the connector.

[0014] In one embodiment, the guide plate may be positioned on the inside of the connecting body.

[0015] In one embodiment, the connector is positioned in a central region of the baffle plate, and the outer diameter of the guide plate may be smaller than the outer diameter of the baffle plate.

[0016] In one embodiment, when viewed from above, the connecting body may be formed in a ring shape concentric with the central axis of the baffle plate.

[0017] In one embodiment, some of the baffle holes may overlap the guide plate when viewed from above.

[0018] In one embodiment, a plurality of airflow guides are provided, and one of the plurality of airflow guides can be positioned to surround another airflow guide.

[0019] According to another embodiment, another substrate processing device of the present invention is a device for processing a substrate, comprising: a processing room having a processing space for processing a substrate therein; a support unit for supporting a substrate in the processing space; a plasma generation room provided outside the processing room and having a discharge space for generating plasma from a processing gas; an adapter connected to the processing room and the plasma generation room and having a guide space for guiding plasma generated in the discharge space to the processing room; and a baffle assembly disposed between the processing space, the guide space, or the processing space and the guide space, wherein the baffle assembly comprises: a baffle plate having a plurality of baffle holes formed therein for communicating the guide space and the processing space; and an airflow guide disposed below the baffle plate, wherein the airflow guide comprises: a guide plate positioned spaced apart from the baffle plate, provided parallel to the baffle plate, and formed in a ring shape concentric with a central axis of the baffle plate when viewed from above, and provided to guide airflow passing through some of the baffle holes laterally; And it may include a connecting body that connects the baffle plate and the guide plate, is located on the inside or outside of the guide plate, has an opening that penetrates in the vertical direction, and is formed in a ring shape that is concentric with the central axis of the baffle plate when viewed from above.

[0020] In one embodiment, the guide plate may be positioned on the outside of the connector.

[0021] In one embodiment, the guide plate may be positioned on the inside of the connecting body.

[0022] In one embodiment, some of the baffle holes may overlap the guide plate when viewed from above.

[0023] According to one embodiment of the present invention, when removing a thin film on a substrate using plasma, the uniformity of the film removal rate can be improved. Furthermore, according to one embodiment of the present invention, the unevenness of the film removal rate by region on the substrate due to the influence of the direction of the plasma airflow formed within the processing space can be improved.

[0024] Additionally, according to one embodiment of the present invention, thermal deformation of the baffle plate can be prevented by the airflow guide.

[0025] The effects of the present invention are not limited to the effects described above, and those skilled in the art will understand that other effects not mentioned can be derived from the configurations used in the specification and drawings below.

[0026] The various features and advantages of the non-limiting embodiments of this disclosure will become more apparent upon review of the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the claims. The accompanying drawings are not to scale unless explicitly stated otherwise. Various dimensions in the drawings may be exaggerated for clarity.

[0027] Figure 1 is a drawing showing an example of a typical remote plasma processing device.

[0028] FIG. 2 is a cross-sectional view schematically illustrating a substrate processing device according to one embodiment of the present invention.

[0029] Figure 3 is an enlarged cross-sectional view of the baffle assembly illustrated in Figure 2.

[0030] Figure 4 is a bottom view of the baffle assembly illustrated in Figure 3.

[0031] Figure 5 is a drawing showing the flow of plasma in Figure 2.

[0032] FIG. 6 is a cross-sectional view schematically illustrating a substrate processing device according to another embodiment of the present invention.

[0033] FIG. 7 is a cross-sectional view schematically illustrating a substrate processing device according to another embodiment of the present invention.

[0034] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. These exemplary embodiments are provided so that this disclosure will be thorough and will fully convey the scope of the present disclosure to those skilled in the art. To provide a thorough understanding of the embodiments of the present disclosure, numerous specific details, such as examples of specific components, devices, and methods, are set forth. It will be apparent to those skilled in the art that specific details are not necessarily required, and that the exemplary embodiments can be implemented in many different forms, and neither should be construed as limiting the scope of the present disclosure. In some exemplary embodiments, well-known processes, well-known device structures, and well-known techniques are not described in detail.

[0035] The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the example embodiments. As used herein, the singular or non-plural forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "including," and "having" are open-ended and thus specify the presence of stated features, elements, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, elements, steps, operations, elements, components, and / or groups thereof. The method steps, processes, and operations herein are not necessarily to be construed as necessarily being performed in the particular order discussed or described, unless such order is explicitly stated. Additionally, additional or alternative steps may be selected.

[0036] When an element or layer is referred to as being "on," "connected," "joined," "attached," "adjacent," or "covering" another element or layer, it is intended that it is directly on, connected, joined, attached, adjacent, or covering said other element or layer, or that intermediate elements or layers may be present. Conversely, when an element is referred to as being "directly on," "directly connected to," or "directly coupled to" another element or layer, it should be understood that no intermediate elements or layers are present. Like reference numerals refer to like elements throughout the specification. The term "and / or" as used herein includes all combinations and subcombinations of one or more of the listed items.

[0037] Although terms such as first, second, third, etc. may be used herein to describe various elements, regions, layers, and / or sections, it should be understood that these elements, regions, layers, and / or sections are not limited by these terms. These terms are used merely to distinguish one element, region, layer, or section from another element, region, layer, or section. Thus, a first element, a first region, a first layer, or a first section discussed below could also be referred to as a second element, a second region, a second layer, or a second section without departing from the teachings of the exemplary embodiments.

[0038] Spatially relative terms (e.g., "beneath," "beneath," "lower," "above," "top," etc.) may be used for convenience of description to describe the relationship of one element or feature to other element(s) or features as depicted in the drawings. It should be understood that spatially relative terms are intended to encompass not only the orientation depicted in the drawings, but also other orientations of the device in use or operation. For example, if the device in the drawings were turned over, elements described as "beneath" or "below" other elements or features would then be oriented "above" the other elements or features. Thus, the term "beneath" can encompass both above and below orientations. The device can be oriented differently (rotated 90 degrees, or at other orientations), and the spatially relative descriptive phrases used herein can be interpreted accordingly.

[0039] When using the terms "same" or "same" in the description of embodiments, it should be understood that there may be some inaccuracy. Therefore, when one element or value is referred to as being the same as another element or value, it should be understood that the element or value is the same as the other element or value within manufacturing or operating tolerances (e.g., 10%).

[0040] When the terms "approximately" or "substantially" are used herein in connection with a numerical value, it should be understood that the numerical value includes a manufacturing or operating tolerance (e.g., 10%) of the stated value. Furthermore, when the terms "typically" and "substantially" are used in connection with geometrical shapes, it should be understood that geometrical accuracy is not required, but that latitude in the shape is within the scope of the disclosure.

[0041] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments pertain. Furthermore, terms, including terms defined in commonly used dictionaries, should be interpreted to have a meaning consistent with their meaning within the context of the relevant art, and will not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0042] In this embodiment, a wafer is used as an example of a processing target. However, the technical concept of the present invention can also be applied to devices used for processing other types of substrates other than wafers.

[0043]

[0044] FIG. 2 is a cross-sectional view schematically illustrating a substrate processing device according to one embodiment of the present invention.

[0045] As illustrated in FIG. 2, a substrate processing device according to one embodiment of the present invention includes a plasma generating unit (100), an adapter (200), and a process processing unit (300).

[0046] The plasma generation unit (100) may be located at the upper portion of the processing chamber (310). The plasma generation unit (100) may generate plasma by discharging a processing gas and supply the generated plasma to the processing space (301). The plasma may include ions or radical particles for ashing or etching process treatment.

[0047] The plasma generation unit (100) may include a plasma generation room (110), a gas supply unit (120), a power source (130), and an antenna (140).

[0048] The plasma generation chamber (110) may have a plasma generation space (101) with an open top and bottom. The plasma generation chamber (110) may be formed of a ceramic material. For example, the plasma generation chamber (110) may be formed of an insulating material such as quartz or aluminum oxide (Al2O3) among ceramic materials. The upper surface of the plasma generation chamber (110) may be sealed by a gas supply port (114). A processing gas may be supplied to the plasma generation space (101) through the gas supply port (114). The gas supplied to the plasma generation space (101) may be introduced into the processing space (301) through a baffle assembly (350).

[0049] The gas supply unit (120) can supply a processing gas. The gas supply unit (120) can be connected to a gas supply port (114). The processing gas supplied by the gas supply unit (120) can be a gas containing fluorine and / or hydrogen.

[0050] The power source (130) can apply power to the antenna (140). The power source (130) can apply a high-frequency alternating current to the antenna (140). The high-frequency alternating current applied to the antenna (140) can form an induced electric field in the plasma generation space (101). Within the plasma generation space (101), the processing gas can obtain energy required for ionization from the induced electric field and be converted into a plasma state.

[0051] An antenna (140) is provided to surround the plasma generation chamber (110) from a height corresponding to the upper end of the plasma generation chamber (110) to a height corresponding to the lower end. The upper end of the antenna (140) is connected to a power source (130), and the lower end of the antenna (140) is grounded.

[0052] The adapter (200) may be placed at the bottom of the plasma generation chamber (110) and the treatment chamber (310). The adapter (200) may diffuse plasma generated in the plasma generation chamber (110) to the treatment space (301). In addition, the adapter (200) may have a guide space (201). The guide space (201) is provided so that the top and bottom are open. The adapter (200) may have an inverted funnel shape. The top of the adapter (200) may have a diameter corresponding to the plasma generation chamber (110). The bottom of the adapter (200) may have a diameter larger than the top of the adapter (200).

[0053] The process treatment unit (300) provides a treatment space (301) in which a substrate (W) is placed and treatment of the substrate (W) is performed. Plasma generated in the plasma generation unit (100) is supplied to the treatment space (301) of the process treatment unit (300).

[0054] The process treatment unit (300) may include a treatment room (310), a support unit (320), an exhaust unit (330), and a baffle assembly (350).

[0055] A processing space (301) is provided inside the processing room (310). The processing space (301) is provided with an open top. A substrate entrance (not shown) may be formed on a side wall of the processing room (310). The substrate entrance may be opened and closed by a door (not shown). In addition, an exhaust hole (314) is formed on the bottom surface of the processing room (310). The exhaust hole (314) may exhaust processing gas and / or byproducts within the processing space (301) to the outside of the processing space (301). An exhaust pipe (331) may be connected to the exhaust hole (314), and a pressure reducing pump may be installed in the exhaust pipe (331).

[0056] The support unit (320) supports the substrate (W) in the processing space (301). In one example, the support unit (320) may include a support plate (321) on which the substrate (W) is placed and a support shaft (322) that supports the same. The support plate (321) may be provided to fix the substrate (W) with an electrostatic force. Optionally, the support plate (321) may be provided to fix the substrate (W) with a vacuum pressure. An exhaust baffle (323) may be further provided on the outside of the support plate (321). The exhaust baffle (323) may form a uniform exhaust flow.

[0057] The exhaust unit (330) depressurizes the inside of the processing space (301) to exhaust the airflow inside the processing space (301). The exhaust unit (330) is connected to the exhaust hole (314) by an exhaust pipe (331). The exhaust unit (330) may be configured as a depressurization pump. The exhaust unit (330) discharges processing gas remaining inside the processing unit (300) and / or reaction byproducts generated during the substrate processing process to the outside, and maintains the pressure inside the processing unit (300) at a set pressure.

[0058]

[0059] Fig. 3 is an enlarged cross-sectional view of the baffle assembly illustrated in Fig. 2. Fig. 4 is a bottom view of the baffle assembly illustrated in Fig. 3.

[0060] The baffle assembly (350) is positioned on the upper portion of the support unit (320). The baffle assembly (350) is positioned to face the support unit (320). The baffle assembly (350) may be positioned between the support unit (320) and the plasma generator (100). The baffle assembly (350) may be positioned between the processing space (301) and the guide space (201). Optionally, the baffle assembly (350) may be positioned in the guide space (201) or in the processing space (301). The baffle assembly (350) uniformly supplies plasma flowing through the guide space (201) of the adapter (200) to the processing space (301). The baffle assembly (350) may be grounded. This minimizes the flow of ions from the plasma into the processing space (301), and allows radicals within the plasma to be supplied primarily to the processing space (301).

[0061] The baffle assembly (350) may include a baffle plate (351) and an airflow guide (352).

[0062] The baffle plate (351) generally has a plate shape with a certain thickness. The baffle plate (351) may have a circular shape when viewed from above. A plurality of baffle holes (351a) are formed in the baffle plate (351).

[0063] The baffle hole (351a) is provided as a through hole that penetrates from the upper surface to the lower surface of the baffle plate (351). The baffle hole (351a) may be formed in a direction perpendicular to the substrate (W). Plasma introduced into the guide space (201) may be supplied to the processing space (301) through the baffle hole (351a). The baffle holes (351a) may be formed with different diameters depending on the area of ​​the baffle plate (351). For example, the baffle hole (351a) may be provided with different sizes in the central area and the edge area.

[0064] The airflow guide (352) is placed below the baffle plate (351).

[0065] The airflow guide (352) may include a guide plate (352a) and a connecting body (352b).

[0066] The guide plate (352a) is disposed at the bottom of the baffle plate (351). The guide plate (352a) is positioned to be spaced apart from the baffle plate (351). The guide plate (352a) guides airflow passing through some of the baffle holes (351a) laterally. When viewed from above, the guide plate (352a) is disposed at a position overlapping at least one of the baffle holes (351a). The guide plate (352a) may extend to the outside of the connecting body (352b). The guide plate (352a) may be provided parallel to the baffle plate (351). When viewed from above, the guide plate (352a) may be formed in a ring shape concentric with the central axis of the baffle plate (351). The outer diameter of the guide plate (352a) may be formed to be smaller than the outer diameter of the baffle plate (351). The guide plate (352a) may be coupled to the baffle plate (351) by a connecting member (352b) described later. The height, length, and / or shape of the guide plate (352a) may be appropriately selected and provided to change the flow of plasma in a desired direction.

[0067] The connector (352b) connects the guide plate (352a) to the baffle plate (351). In one example, the connector (352b) may be formed in a cylindrical shape. An opening extending vertically through the connector (352b) may be formed. The connector (352b) may have the same central axis as the baffle plate (351). Generally, in a structure in which an adapter (200) such as that shown in FIG. 3 is used, plasma is more concentrated in the central region of the upper surface of the baffle plate (351) than in the edge region of the upper surface of the baffle plate (351). This causes the central region of the baffle plate (351) to be relatively more thermally deformed than the edge region. However, in the baffle assembly (350) of FIG. 3, since the connector (352b) is connected to the central region of the baffle plate (351), the rigidity is increased in the central region of the baffle plate (351). Therefore, thermal deformation can be prevented in the central area of ​​the baffle plate (351).

[0068] In addition, unlike in FIG. 3, when the airflow guide (352) is positioned on the upper side of the baffle plate (351), the airflow guide (352) may be thermally deformed by the plasma. However, when the airflow guide (352) is positioned on the lower side of the baffle plate (351) as in FIG. 3 and the baffle plate (351) is grounded, only radicals whose ions are blocked in the plasma come into contact with the airflow guide (352). Therefore, thermal deformation of the airflow guide (352) can be reduced.

[0069]

[0070] Hereinafter, a substrate processing method using a substrate processing device according to one embodiment of the present invention as described above will be described.

[0071] Figure 5 is a drawing showing the flow of plasma in Figure 2.

[0072] As shown in Fig. 5, plasma generated in the plasma generation room (110) is supplied by spreading from the plasma generation space (101) to the guide space (201).

[0073] Thereafter, the plasma is supplied to the processing space (301) through the baffle holes (351a). The plasma reacts with the thin film on the substrate (W) to remove the thin film, and is discharged through the exhaust hole (314). The thin film may be a photoresist film. Optionally, the thin film may be a natural oxide film.

[0074] As described above, when viewed from above, some of the baffle holes (351a) overlap with the guide plate (352a), and the remaining baffle holes (351a) do not overlap with the guide plate (352a). Plasma passing through the baffle holes (351a) that do not overlap with the guide plate (352a) generally flows toward the substrate (W) in a direction perpendicular to the substrate (W). However, plasma passing through the baffle holes (351a) that overlap with the guide plate (352a) moves laterally along the guide plate (352a) for a certain distance and then flows toward the substrate (W).

[0075] When the guide plate (352a) is provided to extend outward from the lower end of the connecting body (352b) as shown in Fig. 5, plasma passing through the baffle holes (351a) overlapping the guide plate (352a) moves a certain distance away from the central axis of the substrate (W) and then flows to the substrate (W). Therefore, compared to a case where the airflow guide (352) is not provided, the film removal rate can be improved in the edge region rather than the central region of the substrate (W).

[0076] In addition, in the area where the guide plate (352a) is provided, the distance between the substrate (W) and the guide plate (352a) is closer than the distance between the baffle plate (351) and the substrate (W). When the distance between the substrate (W) and the baffle plate (351) is long, there is a high possibility that some of the plasma passing through the baffle plate (351) will not reach the substrate (W) and will flow to the outside of the substrate (W). However, in the area where the guide plate (352a) is provided, since the distance between the substrate (W) and the guide plate (352a) is relatively close, most of the plasma that passes through the connector (352b) and flows between the substrate (W) and the guide plate (352a) reacts with the central area of ​​the substrate. Therefore, the film removal rate is improved in the central area of ​​the substrate (W).

[0077]

[0078] In the above-described example, the guide plate is described as extending outward from the lower end of the connector. However, unlike this, as shown in FIG. 6, the guide plate (352a) may extend inward from the lower end of the connector (352b). In this case, the plasma passing through the baffle hole (351a) formed in the area overlapping the guide plate (352a) in the baffle plate (351) moves toward the central axis of the substrate (W) and is then supplied to the substrate (W), thereby improving the film removal rate in the central area of ​​the substrate (W).

[0079] In addition, unlike the above, as illustrated in FIG. 7, the baffle assembly (350) may include a plurality of airflow guides (352). One of the plurality of airflow guides (352) may be positioned to surround another airflow guide (352). In this case, the guide plates (352a) formed on each of the airflow guides (352) may be configured to face different directions. For example, the guide plates (352a) may be formed to face the inside and outside of the connecting body (352b), as exemplified in the above-described embodiments.

[0080]

[0081] As described above, the present invention has been described with specific details such as specific components and limited examples and drawings, but these are provided only to help a more general understanding of the present invention, and the present invention is not limited to the above examples, and those with ordinary knowledge in the field to which the present invention pertains can make various modifications and variations from this description.

[0082] Therefore, the idea of ​​the present invention should not be limited to the described embodiments, and all things that are equivalent or equivalent to the claims described below as well as the claims are considered to fall within the scope of the idea of ​​the present invention.

Claims

1. In a device for processing a substrate, A processing room having a processing space for processing a substrate inside; A support unit for supporting a substrate in the above processing space; A plasma generation room provided outside the above treatment room and having a discharge space for generating plasma from treatment gas; An adapter connected to the above treatment room and the above plasma generation room and having a guide space for guiding plasma generated in the discharge space to the treatment room; and Including a baffle assembly disposed between the processing space, the guide space, or the processing space and the guide space, The above baffle assembly, A baffle plate having a plurality of baffle holes formed to connect the guide space and the processing space; and Including an airflow guide disposed below the above baffle plate, The above airflow guide is, A substrate processing device having a guide plate positioned apart from the baffle plate and provided to laterally guide airflow passing through some of the baffle holes.

2. In paragraph 1, A substrate processing device, wherein the above guide plate is provided parallel to the above baffle plate.

3. In paragraph 1, A substrate processing device, wherein the guide plate is formed in a ring shape concentric with the central axis of the baffle plate when viewed from above.

4. In paragraph 1, The above airflow guide is, A substrate processing device further comprising a connecting body that connects the baffle plate and the guide plate and has an opening formed through the upper and lower directions.

5. In paragraph 4, A substrate processing device, wherein the above guide plate is located on the outside of the above connecting body.

6. In paragraph 4, A substrate processing device, wherein the above guide plate is located on the inside of the above connecting body.

7. In paragraph 4, The above connector is located in the central area of the above baffle plate, A substrate processing device wherein the outer diameter of the above guide plate is smaller than the outer diameter of the above baffle plate.

8. In paragraph 4, A substrate processing device, wherein the connecting body is formed in a ring shape concentric with the central axis of the baffle plate when viewed from above.

9. In paragraph 1, A substrate processing device, wherein some of the baffle holes overlap with the guide plate when viewed from above.

10. In paragraph 1, The above airflow guides are provided in multiple numbers, A substrate processing device, wherein one of the plurality of air flow guides is positioned to surround another air flow guide.

11. In a device for processing a substrate, A processing room having a processing space for processing a substrate inside; A support unit for supporting a substrate in the above processing space; A plasma generation room provided outside the above treatment room and having a discharge space for generating plasma from treatment gas; An adapter connected to the above treatment room and the above plasma generation room and having a guide space for guiding plasma generated in the discharge space to the treatment room; and Including a baffle assembly disposed between the processing space, the guide space, or the processing space and the guide space, The above baffle assembly, A baffle plate having a plurality of baffle holes formed to connect the guide space and the processing space; and Including an airflow guide disposed below the above baffle plate, The above airflow guide is, A guide plate positioned apart from the baffle plate, provided parallel to the baffle plate, formed in a ring shape concentric with the central axis of the baffle plate when viewed from above, and provided to guide airflow passing through some of the baffle holes laterally; and A substrate processing device comprising a connecting body that connects the baffle plate and the guide plate, is located on the inside or outside of the guide plate, has an opening formed through the upper and lower directions, and is formed in a ring shape that is concentric with the central axis of the baffle plate when viewed from above.

12. In paragraph 11, A substrate processing device, wherein the above guide plate is located on the outside of the above connecting body.

13. In paragraph 11, A substrate processing device, wherein the above guide plate is located on the inside of the above connecting body.

14. In paragraph 11, A substrate processing device, wherein some of the baffle holes overlap with the guide plate when viewed from above.

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