Substrate processing device

Abstract

The present invention relates to a substrate processing apparatus comprising: a processing chamber having a processing space; a plasma generation chamber having a discharge space for generating plasma from a processing gas; an adapter having a guide space for guiding the plasma generated in the discharge space to the processing chamber; and a baffle assembly disposed in the processing space, the guide space, or between the processing space and the guide space. The baffle assembly may comprise: a baffle plate having a plurality of baffle holes provided as passages for gas flowing between the guide space and the processing space; a coupling member for coupling the baffle plate to the processing chamber or the adapter; and a cover surrounding a coupling space in which the coupling member is located so that the coupling member is not exposed to the processing space.

Description

substrate processing device

[0001] The present invention relates to a substrate processing device, and more specifically, to a substrate processing device that processes a substrate using plasma.

[0002] Plasma is an ionized gaseous state composed of ions, radicals, and electrons. Plasma is generated by extremely high temperatures, strong electric fields, or radio-frequency electromagnetic fields (RF electromagnetic fields). Semiconductor device manufacturing processes often involve ashing or etching processes, which use plasma to remove thin films on substrates. These processes are accomplished by the collision or reaction of ions and / or radical particles contained in the plasma with the film on the substrate.

[0003] Fig. 1 shows an example of a remote plasma treatment device. Referring to Fig. 1, the remote plasma treatment device has a plasma generation room (21) and a treatment room (22), and plasma generated in the plasma generation room (21) flows into the treatment room (22) through an adapter (24) and a baffle (23) to plasma-treat a wafer (W1).

[0004] In the plasma processing device of Fig. 1, the baffle (23) is screwed to the processing chamber (22) or adapter (24) by a bolt. However, during the fastening, particles (T1) are generated due to wear of the threads of the bolt (B1) or the threads formed in the processing chamber (22) or adapter (24) for bolt fastening. In addition, the bolt (B1) is generally made of an alloy containing iron. Therefore, when the process gas contains oxygen, the surface of the bolt (B1) is oxidized by the oxygen plasma, thereby generating particles. These particles fall on the wafer (W1) and cause process defects.

[0005] The present invention aims to provide a substrate processing device that prevents fine debris and particles from flowing into the substrate side around a fastening area where a baffle is joined.

[0006] The technical problems to be solved by the present invention are not limited thereto, and those skilled in the art will understand that other technical problems not mentioned can be derived from the configurations used in the specification and drawings below.

[0007] According to one embodiment, a substrate processing device of the present invention is a device for processing a substrate, comprising: a processing room having a processing space for processing a substrate therein; a support unit for supporting a substrate in the processing space; a plasma generation room provided outside the processing room and having a discharge space for generating plasma from a processing gas; an adapter connected to the processing room and the plasma generation room and having a guide space for guiding plasma generated in the discharge space to the processing room; and a baffle assembly disposed between the processing space, the guide space, or the processing space and the guide space, wherein the baffle assembly may include: a baffle plate having a plurality of baffle holes formed therein, which serve as passages for gas flowing between the guide space and the processing space; a fastening member for fastening the baffle plate to the processing room or the adapter; and a cover for covering the fastening space in which the fastening member is positioned so that the fastening member is not exposed to the processing space.

[0008] In one embodiment, the fastening member may include a bolt.

[0009] In one embodiment, the baffle plate includes a spray area in which the baffle hole is formed, and a fastening area in which a fastening hole is formed that is located outside the spray area and into which the bolt is inserted, and the cover may have a first area in contact with the fastening area; and a second area in contact with the spray area.

[0010] In one embodiment, the fastening region and the spray region may be provided with a step so that the fastening region is positioned higher than the spray region.

[0011] In one embodiment, the first region may be in contact with an outer surface of the fastening region, and the second region may be in contact with a lower surface of the injection region.

[0012] In one embodiment, the first region may be formed in a ring shape, and the second region may be formed in a ring shape.

[0013] In one embodiment, the baffle assembly may further include a seal inserted between the second region and the injection region.

[0014] In one embodiment, the sealing may be provided only between the second region and the injection region and between the first region and the fastening region.

[0015] In one embodiment, the baffle assembly may further include a fixing member that fixes the cover to the baffle plate.

[0016] In one embodiment, the fixing member can fix the first region to the fastening region.

[0017] In one embodiment, the baffle assembly may be provided with a discharge passage for discharging particles within the fastening space to the outside of the cover.

[0018] In one embodiment, the discharge passage may be formed between the first region and the fastening region.

[0019] In one embodiment, the baffle assembly may further include a guide body that guides particles discharged through the discharge passage to an edge region of the processing space.

[0020] In one embodiment, the guide body is coupled to an outer surface of the second region of the cover and may extend downwards below the lower end of the cover.

[0021] According to one embodiment, a device for processing a substrate may include a processing chamber having a processing space for processing a substrate therein; a support unit for supporting a substrate in the processing space; a plasma generation chamber provided outside the processing chamber and having a discharge space for generating plasma from a processing gas; an adapter connected to the processing chamber and the plasma generation chamber and having a guide space for guiding plasma generated in the discharge space to the processing chamber; and a baffle assembly disposed between the processing space and the guide space, wherein the baffle assembly may include a baffle plate including an injection region in which a plurality of baffle holes, which are passages for gas flowing between the guide space and the processing space, are formed, and a fastening region located outside the injection region and having a fastening hole formed therein; a bolt for fastening the baffle plate to the processing chamber or the adapter through the fastening hole; a cover covering the fastening space in which the bolt is located; and a sealing ring inserted between the cover and the fastening region.

[0022] In one embodiment, the fastening region and the spray region are provided with a step so that the fastening region is positioned higher than the spray region, the cover has a first region coupled with an outer surface of the fastening region and a second region coupled with a lower surface of the spray region, and the baffle assembly may further include a fixing bolt that fixes the first region and the fastening region.

[0023] In one embodiment, the sealing is provided only between the second region and the spray region and between the first region and the fastening region, and an exhaust passage may be provided between the first region and the fastening region, or in the first region, to discharge particles within the fastening space to the outside of the cover.

[0024] In one embodiment, the baffle assembly further includes a guide body that guides particles discharged through the discharge passage to an edge region of the processing space, the guide body being coupled to an outer surface of the second region of the cover and extending downwards below the lower end of the cover.

[0025] According to one embodiment of the present invention, it is possible to prevent fine debris and particles generated from a fastening member for fixing a baffle plate from flowing into the substrate side.

[0026] The effects of the present invention are not limited to the effects described above, and those skilled in the art will understand that other effects not mentioned can be derived from the configurations used in the specification and drawings below.

[0027] The various features and advantages of the non-limiting embodiments of this disclosure will become more apparent upon review of the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the claims. The accompanying drawings are not to scale unless explicitly stated otherwise. Various dimensions in the drawings may be exaggerated for clarity.

[0028] Figure 1 is a drawing showing an example of a remote plasma processing device.

[0029] FIG. 2 is a cross-sectional view schematically illustrating an example of a substrate processing device according to one embodiment of the present invention.

[0030] Figure 3 is an enlarged view of area 'A' of Figure 2.

[0031] Figure 4 is a cross-sectional view of the baffle assembly of Figure 2 in an exploded state.

[0032] Figure 5 is a perspective view of the baffle plate viewed from below.

[0033] Figure 6 is a drawing showing the movement path of the particle in Figure 4.

[0034] FIGS. 7 to 12 are drawings of substrate processing devices according to other embodiments of the present invention.

[0035] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. These exemplary embodiments are provided so that this disclosure will be thorough and will fully convey the scope of the present disclosure to those skilled in the art. To provide a thorough understanding of the embodiments of the present disclosure, numerous specific details, such as examples of specific components, devices, and methods, are set forth. It will be apparent to those skilled in the art that specific details are not necessarily required, and that the exemplary embodiments can be implemented in many different forms, and neither should be construed as limiting the scope of the present disclosure. In some exemplary embodiments, well-known processes, well-known device structures, and well-known techniques are not described in detail.

[0036] The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the example embodiments. As used herein, the singular or non-plural forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "including," and "having" are open-ended and thus specify the presence of stated features, elements, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, elements, steps, operations, elements, components, and / or groups thereof. The method steps, processes, and operations herein are not necessarily to be construed as necessarily being performed in the particular order discussed or described, unless such order is explicitly stated. Additionally, additional or alternative steps may be selected.

[0037] When an element or layer is referred to as being "on," "connected," "joined," "attached," "adjacent," or "covering" another element or layer, it is intended that it is directly on, connected, joined, attached, adjacent, or covering said other element or layer, or that intermediate elements or layers may be present. Conversely, when an element is referred to as being "directly on," "directly connected to," or "directly coupled to" another element or layer, it should be understood that no intermediate elements or layers are present. Like reference numerals refer to like elements throughout the specification. The term "and / or" as used herein includes all combinations and subcombinations of one or more of the listed items.

[0038] Although terms such as first, second, third, etc. may be used herein to describe various elements, regions, layers, and / or sections, it should be understood that these elements, regions, layers, and / or sections are not limited by these terms. These terms are used merely to distinguish one element, region, layer, or section from another element, region, layer, or section. Thus, a first element, a first region, a first layer, or a first section discussed below could also be referred to as a second element, a second region, a second layer, or a second section without departing from the teachings of the exemplary embodiments.

[0039] Spatially relative terms (e.g., "beneath," "beneath," "lower," "above," "top," etc.) may be used for convenience of description to describe the relationship of one element or feature to other element(s) or features as depicted in the drawings. It should be understood that spatially relative terms are intended to encompass not only the orientation depicted in the drawings, but also other orientations of the device in use or operation. For example, if the device in the drawings were turned over, elements described as "beneath" or "below" other elements or features would then be oriented "above" the other elements or features. Thus, the term "beneath" can encompass both above and below orientations. The device can be oriented differently (rotated 90 degrees, or at other orientations), and the spatially relative descriptive phrases used herein can be interpreted accordingly.

[0040] When using the terms "same" or "same" in the description of embodiments, it should be understood that there may be some inaccuracy. Therefore, when one element or value is referred to as being the same as another element or value, it should be understood that the element or value is the same as the other element or value within manufacturing or operating tolerances (e.g., 10%).

[0041] When the terms "approximately" or "substantially" are used herein in connection with a numerical value, it should be understood that the numerical value includes a manufacturing or operating tolerance (e.g., 10%) of the stated value. Furthermore, when the terms "typically" and "substantially" are used in connection with geometrical shapes, it should be understood that geometrical accuracy is not required, but that latitude in the shape is within the scope of the disclosure.

[0042] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments pertain. Furthermore, terms, including terms defined in commonly used dictionaries, should be interpreted to have a meaning consistent with their meaning within the context of the relevant art, and will not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0043] In this embodiment, a wafer is used as an example of a processing target. However, the technical concept of the present invention can also be applied to devices used for processing other types of substrates other than wafers.

[0044]

[0045] FIG. 2 is a cross-sectional view schematically illustrating a substrate processing device according to one embodiment of the present invention.

[0046] Referring to FIG. 2, a substrate processing device according to one embodiment of the present invention includes a plasma generating unit (100), an adapter (200), and a process processing unit (300).

[0047] The plasma generation unit (100) may be located at the upper portion of the processing chamber (310). The plasma generation unit (100) may generate plasma by discharging a processing gas and supply the generated plasma to the processing space (301). The plasma may include ions or radical particles for ashing or etching process treatment.

[0048] The plasma generation unit (100) may include a plasma generation room (110), a gas supply unit (120), a power source (130), and an antenna (140).

[0049] The plasma generation chamber (110) may have a plasma generation space (101) with an open top and bottom. The plasma generation chamber (110) may be formed of a ceramic material. For example, the plasma generation chamber (110) may be formed of an insulating material such as quartz or aluminum oxide (Al2O3). The upper surface of the plasma generation chamber (110) may be sealed by a gas supply port (114). A processing gas may be supplied to the plasma generation space (101) through the gas supply port (114). The gas supplied to the plasma generation space (101) may be introduced into the processing space (301) through a baffle assembly (350).

[0050] The gas supply unit (120) can supply a processing gas. The gas supply unit (120) can be connected to a gas supply port (114). The processing gas supplied by the gas supply unit (120) can be a gas containing fluorine and / or hydrogen.

[0051] The power source (130) can apply power to the antenna (140). The power source (130) can apply a high-frequency alternating current to the antenna (140). The high-frequency alternating current applied to the antenna (140) can form an induced electric field in the plasma generation space (101). Within the plasma generation space (101), the processing gas can obtain energy required for ionization from the induced electric field and be converted into a plasma state.

[0052] An antenna (140) is provided to surround the plasma generation chamber (110) from a height corresponding to the upper end of the plasma generation chamber (110) to a height corresponding to the lower end. The upper end of the antenna (140) is connected to a power source (130), and the lower end of the antenna (140) is grounded.

[0053] The adapter (200) may be placed at the bottom of the plasma generation chamber (110) and the treatment chamber (310). The adapter (200) may diffuse plasma generated in the plasma generation chamber (110) to the treatment space (301). In addition, the adapter (200) may have a guide space (201). The guide space (201) is provided to be open at the top and bottom. The adapter (200) may have an inverted funnel shape. The upper end of the adapter (200) may have a diameter corresponding to the plasma generation chamber (110). The lower end of the adapter (200) may have a diameter larger than the upper end of the adapter (200).

[0054] The process treatment unit (300) provides a treatment space (301) in which treatment of the substrate (W) is performed. Plasma generated in the plasma generation unit (100) is supplied to the treatment space (301) of the process treatment unit (300).

[0055] The process treatment unit (300) may include a treatment room (310), a support unit (320), an exhaust unit (330), and a baffle assembly (350).

[0056] A processing space (301) is provided inside the processing room (310). The processing space (301) is provided with an open top. A substrate entrance (not shown) may be formed on a side wall of the processing room (310). The substrate entrance may be opened and closed by a door (not shown). In addition, an exhaust hole (314) is formed on the bottom surface of the processing room (310). The exhaust hole (314) may exhaust processing gas and / or byproducts within the processing space (301) to the outside of the processing space (301). An exhaust pipe (331) may be connected to the exhaust hole (314), and a pressure reducing pump may be installed in the exhaust pipe (331).

[0057] The support unit (320) supports the substrate (W) in the processing space (301). In one example, the support unit (320) may include a support plate (321) on which the substrate (W) is placed and a support shaft (322) that supports the same. The support plate (321) may be provided to fix the substrate (W) with an electrostatic force. Optionally, the support plate (321) may be provided to fix the substrate (W) with a vacuum pressure. An exhaust baffle (323) may be further provided on the outside of the support plate (321). The exhaust baffle (323) may provide a uniform exhaust flow throughout the entire area within the processing chamber.

[0058] The exhaust unit (330) has an exhaust pipe (331) and a pressure reducing pump. A pressure reducing pump is installed in the exhaust pipe, and the exhaust pipe (331) is connected to an exhaust hole (314). The exhaust unit (330) discharges processing gas remaining inside the process treatment unit (300) and / or reaction byproducts generated during the substrate treatment process to the outside, and maintains the pressure inside the process treatment unit (300) at a set pressure.

[0059]

[0060] Below, the baffle assembly will be described in more detail with reference to FIGS. 3 to 5.

[0061] Fig. 3 is an enlarged view of area 'A' of Fig. 2. Fig. 4 is a cross-sectional view of the baffle assembly of Fig. 2 in an exploded state. Fig. 5 is a perspective view of the baffle plate viewed from below.

[0062] Referring to FIGS. 3 to 5, the baffle assembly (350) is positioned on the upper portion of the support unit (320) so as to face the support unit (320). The baffle assembly (350) may be positioned between the support unit (320) and the plasma generation unit (100). For example, the baffle assembly (350) may be positioned between the processing space (301) and the guide space (201). Optionally, the baffle assembly (350) may be positioned in the processing space (301) and the guide space (201). Plasma generated in the plasma generation unit (100) may be introduced into the processing space (301) through the baffle assembly (350).

[0063] The baffle assembly (350) may include a baffle plate (351), a fastening member (352), a cover (353), and a seal (355).

[0064] In one example, a baffle plate (351) can be coupled to an adapter (200).

[0065] The baffle plate (351) has an injection area (351a) and a fastening area (351b).

[0066] The injection region (351a) has a plate shape with a certain thickness. The injection region (351a) can be formed in a generally circular shape. A plurality of baffle holes (351e) are formed in the injection region (351a). The baffle holes (351e) are provided as through holes that penetrate from the upper surface to the lower surface of the baffle plate (351). Plasma can flow from the guide space (201) to the processing space (301) through the baffle holes (351e). The baffle holes (351e) can have different diameters.

[0067] The fastening region (351b) is positioned outside the spray region (351a). The fastening region (351b) may be provided in a ring shape. The fastening region (351b) and the spray region (351a) may be provided with a step from each other. The fastening region (351b) may be positioned higher than the spray region (351a). A fastening hole (351b1) is formed in the fastening region (351b). A screw hole (201a) is formed in the adapter (200) at a position corresponding to the fastening hole (351b1).

[0068] A fastening member (352) secures the baffle plate (351) to the adapter (200). In one example, the fastening member (352) may be a bolt.

[0069] The fastening member (352) is inserted into the fastening hole (351b1) of the baffle plate (351) and the screw hole (201a) of the adapter (200). The fastening member (352) has a head portion (352a) and a screw portion (352b). The fastening member (352) is inserted into the fastening hole (351b1) of the baffle plate (351) and the screw hole (201a) of the adapter (200) in an upward direction from the bottom so that the head portion (352a) is positioned lower than the screw portion (352b). Hereinafter, the area where the head portion (352a) of the fastening member (352) is positioned is referred to as a fastening space (351b2). For example, in FIG. 3, the fastening space (351b2) may be an area adjacent to both the fastening area (351b) of the baffle plate (351) and the spray area (351a) of the baffle plate (351).

[0070] A cover (353) is provided to surround the fastening space (351b2) so that the fastening member (352) is not exposed to the processing space (301). The cover (353) has a ring shape.

[0071] The cover (353) may include a first region (353a) and a second region (353b).

[0072] The first region (353a) may be provided in a generally ring shape. The first region (353a) may be provided on the side of the cover. The first region (353a) is positioned opposite the outer surface of the fastening region (351b). The first region (353a) may be provided so as to be in contact with the outer surface of the fastening region (351b).

[0073] The second region (353b) may be provided in a generally ring shape. The second region (353b) may be provided as the bottom portion of the cover (353). The first region (353a) is positioned opposite the lower surface edge region of the spray region (351b). The second region (353b) may be provided so as to be in contact with the lower surface of the spray region (351a).

[0074] The cover (353) can be fixed to the baffle plate (351) by a fixing member (354). The fixing member (354) can be a screw. The fixing member (354) can fix the first region (353a) to the fastening region (351b). A screw hole (353d) is formed on the side of the fastening region (351b) of the baffle plate (351) and the first region (353b) of the cover (353), and the fixing member (354) can be inserted into the screw hole (353d) formed in the fastening region (351b) of the baffle plate (351) and the first region (353a) of the cover (353), respectively.

[0075] A sealing (355) may be placed between the cover (353) and the baffle plate (351). The sealing (355) may be provided with a resin material such as Teflon.

[0076] A sealing (355) may be inserted between the second region (353b) and the injection region (351a). The sealing (355) may be provided in a ring shape. A seal groove (353f) into which the sealing (355) is inserted may be formed on the upper surface of the first region (353a) of the cover (353). The sealing (355) may be provided only between the second region (353b) and the injection region (351a) among the regions between the second region (353b) and the injection region (351a) and the region between the first region (353a) and the fastening region (351b).

[0077]

[0078] Figure 6 is a drawing showing the movement path of the particle in Figure 3.

[0079] Referring further to Fig. 6, a gap may be provided between the first region (353a) and the fastening region (351b). The gap may function as a discharge passage (G1) for discharging particles (P1). When the baffle plate (351) is fixed to the adapter (200) by screw connection with the fastening member (352), particles (P1) may fall from the screw threads. Due to the cover (353), these particles (P1) do not fall into the processing space (301) but remain in the fastening space (351b2). In addition, since the space between the spraying region (351a) of the baffle plate (351) and the cover (353) is sealed by the sealing (355), the particles (P1) are completely blocked from flowing into the central region of the processing space (301) through the space between the spraying region (351a) of the baffle plate (351) and the cover (353). In addition, by providing a discharge passage (G1) that functions as a gap between the first region (353a) and the fastening region (351b), particles (P1) within the fastening space (351b2) can be discharged to the edge region of the processing space (301). The particles (P1) discharged to the edge region of the processing space (301) can be discharged to the outside through the exhaust baffle (323) positioned vertically below it, without flowing to the central region of the processing space (301).

[0080]

[0081] On the other hand, as illustrated in FIG. 7, a substrate processing device according to another embodiment of the present invention may further provide a discharge passage (G1) through which fine debris and particles (P1) are discharged in the baffle assembly (350).

[0082] The discharge passage (G1) is a passage that guides fine particles (P1) within the fastening space (351b2) to be discharged to the outside of the cover (353). The discharge passage (G1) may be provided in the form of a passage penetrating between the first region (353a) and the fastening region (351b). The discharge passage (G1) may be provided at a higher position than the fastening space (351b2). In this case, a seal (355) is not provided between the first region (353a) and the fastening region (351b) for the discharge of particles (P1).

[0083] Here, fine particles (P1) within the fastening space (351b2) can be discharged to the outside of the cover (353) through the discharge passage (G1) and then dropped toward the exhaust hole (314) to be discharged. In this case, particles (P1) remaining in the fastening space (351b2) are continuously discharged through the discharge passage (G1). Therefore, since most of the particles (P1) generated by the splitting of the fastening member (352) are discharged after a certain point, it is possible to avoid causing processing defects on the substrate (W).

[0084] Additionally, in a substrate processing device according to one embodiment of the present invention, the baffle assembly (350) may further include a guide body (365).

[0085] The guide body (365) may be provided in a cylindrical shape. The guide body (365) is positioned on the outer side of the cover (353) but is positioned so as not to cover the discharge passage (G1). The lower surface of the guide body (365) may extend to a height equal to or lower than the lower surface of the cover (353).

[0086] Such a guide body (365) forms an induction space (H1) between the discharge passage (G1) and the processing chamber (310), thereby guiding particles (P1) discharged from the discharge passage (G1) toward the exhaust hole (314). Therefore, the guide body (365) can prevent particles (P1) from flowing into the substrate (W) side, while allowing particles (P1) to be discharged smoothly.

[0087]

[0088] Furthermore, the substrate processing device according to the present invention can be modified and implemented into various substrate processing devices as follows.

[0089] First, as illustrated in FIG. 8, the discharge passage (G1) may be provided in the form of a through hole penetrating the first region (353a) of the cover (353). In addition, as illustrated in FIG. 9, the baffle plate (351) may be provided with a fastening space (351b2) in the form of a hole. In addition, as illustrated in FIG. 10, the baffle plate (351) may be provided in the form of a flat plate. In this case, the cover (353) may be provided in a form in which the second region (353b) forms the fastening space (351b2) but surrounds the head portion (352a) of the fastening member (352). In addition, as illustrated in FIG. 11, the baffle plate (351) and the cover (353) may be formed in a form in which no sealing (355) is formed between them. Additionally, as illustrated in FIG. 12, the sealing (355) can be provided not only between the injection area (351a) and the second area (353b), but also between the first area (353a) and the fastening area (351b).

[0090] As described above, the present invention has been described with specific details such as specific components and limited examples and drawings, but these are provided only to help a more general understanding of the present invention, and the present invention is not limited to the above examples, and those with ordinary knowledge in the field to which the present invention pertains can make various modifications and variations from this description.

[0091] Therefore, the idea of ​​the present invention should not be limited to the described embodiments, and all things that are equivalent or equivalent to the claims described below as well as the claims are considered to fall within the scope of the idea of ​​the present invention.

Claims

1. In a device for processing a substrate, A processing room having a processing space for processing a substrate inside; A support unit for supporting a substrate in the above processing space; A plasma generation room provided outside the above treatment room and having a discharge space for generating plasma from treatment gas; An adapter connected to the above treatment room and the above plasma generation room and having a guide space for guiding plasma generated in the discharge space to the treatment room; and Including a baffle assembly disposed between the processing space, the guide space, or the processing space and the guide space, The above baffle assembly, A baffle plate having a plurality of baffle holes formed therein, which serve as passages for gas flowing between the guide space and the processing space; A fastening member for fastening the baffle plate to the processing room or the adapter; and A substrate processing device comprising a cover that surrounds a fastening space in which the fastening member is positioned so that the fastening member is not exposed to the processing space.

2. In paragraph 1, A substrate processing device, wherein the fastening member includes a bolt.

3. In paragraph 2, The above baffle plate, The injection area in which the above baffle hole is formed, It includes a fastening area located outside the above injection area and having a fastening hole formed into which the bolt is inserted, The above cover, A first area in contact with the above-mentioned connection area; and A substrate processing device having a second region in contact with the above-mentioned injection region.

4. In paragraph 3, A substrate processing device, wherein the fastening region and the spray region are provided with a step so that the fastening region is positioned higher than the spray region.

5. In either of paragraphs 3 and 4, The above first region is in contact with the outer surface of the above fastening region, A substrate processing device in which the second region is in contact with the lower surface of the injection region.

6. In either of paragraphs 3 and 4, The above first region is formed in a ring shape, A substrate processing device wherein the second region is formed in a ring shape.

7. In either of paragraphs 3 and 4, The above baffle assembly, A substrate processing device further comprising a sealing inserted between the second region and the injection region.

8. In paragraph 7, A substrate processing device, wherein the sealing is provided only between the second region and the injection region and between the first region and the fastening region.

9. In either of paragraphs 3 and 4, The above baffle assembly, A substrate processing device further comprising a fixing member for fixing the cover to the baffle plate.

10. In paragraph 9, A substrate processing device wherein the above fixing member fixes the first region to the fastening region.

11. In paragraph 3, A substrate processing device, wherein the baffle assembly is provided with a discharge passage for discharging particles within the fastening space to the outside of the cover.

12. In paragraph 11, A substrate processing device, wherein the above discharge passage is formed between the first region and the fastening region.

13. In paragraph 11, The above baffle assembly, A substrate processing device further comprising a guide body that guides particles discharged through the discharge passage to an edge area of the processing space.

14. In paragraph 13, A substrate processing device, wherein the guide body is coupled to the outer surface of the second area of the cover and extends downwards below the lower end of the cover.

15. In a device for processing a substrate, A processing room having a processing space for processing a substrate inside; A support unit for supporting a substrate in the above processing space; A plasma generation room provided outside the above treatment room and having a discharge space for generating plasma from treatment gas; An adapter connected to the above treatment room and the above plasma generation room and having a guide space for guiding plasma generated in the discharge space to the treatment room; and Including a baffle assembly disposed between the above processing space and the above guide space, The above baffle assembly, A baffle plate including an injection area in which a plurality of baffle holes are formed as passages for gas flowing between the guide space and the processing space, and a fastening area located outside the injection area and having fastening holes formed therein; A bolt for fastening the baffle plate to the processing room or the adapter through the fastening hole; A cover surrounding the fastening space where the above bolt is located; and A substrate processing device comprising a sealing inserted between the cover and the spraying area.

16. In paragraph 15, The fastening area and the spraying area are provided with a step so that the fastening area is positioned higher than the spraying area, The above cover, A first region that is combined with the outer surface of the above-mentioned fastening region, Having a second region coupled with the lower surface of the above injection region, The above baffle assembly A substrate processing device further comprising a fixing bolt for fixing the first region and the fastening region.

17. In paragraph 16, The sealing is provided only between the second area and the injection area and between the first area and the fastening area, and A substrate processing device, wherein an exhaust passage is provided between the first region and the fastening region, or in the first region, for discharging particles within the fastening space to the outside of the cover.

18. In paragraph 17, The above baffle assembly, It further includes a guide body that guides particles discharged through the discharge passage to the edge area of the processing space, A substrate processing device, wherein the guide body is coupled to the outer surface of the second area of the cover and extends downwards below the lower end of the cover.

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