Light-emitting device and electronic apparatus

Abstract

Provided is a light-emitting device comprising a plurality of light-emitting elements which are arranged on a substrate. The light-emitting elements each include: a first electrode which is layered on the substrate; a light-emitting layer which is layered on the first electrode and emits light; a second electrode which is layered on the light-emitting layer and transmits the light from the light-emitting layer; and a pixel separation layer which covers an outer edge section of the first electrode and has an opening section exposing a central section of an upper surface of the first electrode. An insulating film is provided so as to cover at least a part of an inner side surface of the opening section of the pixel separation layer.

Description

Light-emitting device and electronic device

[0001] The present disclosure relates to a light-emitting device and an electronic device.

[0002] In recent years, development of display devices (light-emitting devices) using organic electroluminescence (EL) elements as light-emitting elements has progressed. Such display devices have, for example, a plurality of pixels (light-emitting elements) each composed of a lower electrode, a light-emitting layer stacked on the lower electrode, and an upper electrode stacked on the light-emitting layer. When a predetermined voltage is applied to the lower electrode and the upper electrode, the light-emitting layer sandwiched between the lower electrode and the upper electrode emits light.

[0003] JP 2012-216495 A

[0004] In a light-emitting device, a pixel separation layer covering the outer periphery of the lower electrode separates the light-emitting regions of each pixel (light-emitting element) and suppresses current leakage between adjacent pixels. While studies are underway to more reliably suppress current leakage, some structures of the pixel separation layer may result in degradation of the performance of the light-emitting device.

[0005] Therefore, the present disclosure proposes a light-emitting device and an electronic device that can suppress current leakage between adjacent pixels (light-emitting elements) while suppressing deterioration in the performance of the light-emitting device.

[0006] According to the present disclosure, there is provided a light-emitting device comprising a plurality of light-emitting elements arranged on a substrate, each of the light-emitting elements having a first electrode stacked on the substrate, a light-emitting layer stacked on the first electrode and emitting light, a second electrode stacked on the light-emitting layer and transmitting light from the light-emitting layer, and a pixel separation layer covering the outer edge of the first electrode and having an opening exposing the center of the upper surface of the first electrode, and an insulating film provided so as to cover at least a portion of the inner surface of the opening in the pixel separation layer.

[0007] Furthermore, according to the present disclosure, there is provided an electronic device equipped with a light-emitting device having a plurality of light-emitting elements arranged on a substrate, wherein each of the light-emitting elements has a first electrode stacked on the substrate, a light-emitting layer stacked on the first electrode and emitting light, a second electrode stacked on the light-emitting layer and transmitting light from the light-emitting layer, and a pixel separation layer covering the outer edge of the first electrode and having an opening exposing the center of the upper surface of the first electrode, and an insulating film is provided so as to cover at least a portion of the inner surface of the opening in the pixel separation layer.

[0008] FIG. 1 is a schematic diagram illustrating an example of the overall configuration of a light-emitting device 10 according to an embodiment of the present disclosure. FIG. 2 is a schematic circuit diagram illustrating a wiring relationship in a sub-pixel 100 in the mth row and the nth column. FIG. 3 is a cross-sectional view (part 1) illustrating an example of the configuration of a sub-pixel 100a according to a comparative example. FIG. 4 is a cross-sectional view (part 2) illustrating an example of the configuration of a sub-pixel 100a according to a comparative example. FIG. 5 is a cross-sectional view (part 5) illustrating an example of the configuration of a sub-pixel 100 according to an embodiment of the present disclosure. FIG. 6 is a plan view illustrating an example of the configuration of a sub-pixel 100 according to an embodiment of the present disclosure. FIG. 7 is a diagram illustrating experimental data on deterioration of efficiency over time in an embodiment of the present disclosure and a comparative example. FIG. 8 is an explanatory diagram illustrating an operation of an embodiment of the present disclosure. FIG. 9 is a plan view (part 1) illustrating an example of the configuration of a sub-pixel 100 according to a modified embodiment of the present disclosure. FIG. 10 is a plan view (part 2) illustrating an example of the configuration of a sub-pixel 100 according to a modified embodiment of the present disclosure. FIG. 11 is a plan view (part 3) illustrating an example of the configuration of a sub-pixel 100 according to a modified embodiment of the present disclosure. FIG. 12 is an explanatory diagram illustrating a method for manufacturing a sub-pixel 100 according to an embodiment of the present disclosure. FIG. 1 is a conceptual diagram (part 1) for explaining the relationship between a normal LN passing through the center of the light-emitting unit, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selection unit. FIG. 2 is a conceptual diagram (part 2) for explaining the relationship between a normal LN passing through the center of the light-emitting unit, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selection unit. FIG. 3 is a conceptual diagram (part 4) for explaining the relationship between a normal LN passing through the center of the light-emitting unit, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selection unit. 5 is a conceptual diagram (part 5) illustrating the relationship between the normal LN passing through the center of the light-emitting section, the normal LN' passing through the center of the lens member, and the normal LN" passing through the center of the wavelength selection section. FIG. 6 is a conceptual diagram (part 6) illustrating the relationship between the normal LN passing through the center of the light-emitting section, the normal LN' passing through the center of the lens member, and the normal LN" passing through the center of the wavelength selection section. FIG. 7 is a conceptual diagram (part 7) illustrating the relationship between the normal LN passing through the center of the light-emitting section, the normal LN' passing through the center of the lens member, and the normal LN" passing through the center of the wavelength selection section.1 is a schematic cross-sectional view illustrating a first example of a resonator structure; FIG. 2 is a schematic cross-sectional view illustrating a second example of a resonator structure; FIG. 3 is a schematic cross-sectional view illustrating a third example of a resonator structure; FIG. 4 is a schematic cross-sectional view illustrating a fourth example of a resonator structure; FIG. 5 is a schematic cross-sectional view illustrating a fifth example of a resonator structure; FIG. 6 is a schematic cross-sectional view illustrating a sixth example of a resonator structure; FIG. 7 is a schematic cross-sectional view illustrating a seventh example of a resonator structure; FIG. 8 is a front view showing an example of the appearance of a digital still camera; FIG. 9 is a rear view showing an example of the appearance of a digital still camera; FIG. 10 is an external view of a head-mounted display; FIG. 11 is an external view of a see-through head-mounted display; FIG. 12 is an external view of a television device; FIG. 13 is an external view of a smartphone; FIG. 14 is a diagram (part 1) showing the internal configuration of a car; FIG. 15 is a diagram (part 2) showing the internal configuration of a car.

[0009] Preferred embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. In this specification and the drawings, components having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted. Furthermore, in this specification and the drawings, multiple components having substantially the same or similar functional configurations may be distinguished by adding different letters after the same reference numeral. However, when there is no particular need to distinguish between multiple components having substantially the same or similar functional configurations, only the same reference numerals will be used.

[0010] The drawings referred to in the following description are for explaining and facilitating understanding of one embodiment of the present disclosure, and for the sake of clarity, the shapes, dimensions, ratios, etc. shown in the drawings may differ from the actual ones. Furthermore, the design of the devices shown in the drawings can be modified as appropriate, taking into consideration the following description and known technologies.

[0011] In the following description, the descriptions of specific lengths and shapes do not necessarily refer to mathematically defined numerical values ​​or geometrically defined shapes. Specifically, the descriptions of specific lengths and shapes in the following description also include shapes that are similar to or have allowable differences (errors and distortions) in the light-emitting device, its manufacturing process, and its use and operation. For example, the term "approximately circular shape" in the following description does not necessarily refer to a perfect circle, but also includes shapes similar to a perfect circle, such as an ellipse.

[0012] Furthermore, in the following description, "electrically connected" means connecting a plurality of elements directly or indirectly via another element.

[0013] The description will be given in the following order: 1. Overall configuration of the light emitting device according to the embodiment of the present disclosure 2. Background leading to the creation of the embodiment of the present disclosure 3. Embodiment 3.1 Detailed configuration 3.2 Modification 3.3 Manufacturing method 4. Summary 5. Modification 5.1 Modification 1 5.2 Modification 2 6. Application example 7. Supplementary information

[0014] <<1. Overall Configuration of Light-Emitting Device According to Embodiment of the Present Disclosure>> An example of the overall configuration of an organic EL (Electro Luminescence) light-emitting device 10 (hereinafter simply referred to as "light-emitting device 10") according to an embodiment of the present disclosure, which is used as a display device or a lighting device, will be described with reference to Fig. 1. Fig. 1 is a schematic diagram showing an example of the overall configuration of the light-emitting device 10 according to an embodiment of the present disclosure.

[0015] The light emitting device 10 is a device in which light emitting elements such as OLEDs (organic light emitting diodes) or micro-OLEDs are formed in an array. Such a light emitting device 10 can be applied as a display device, for example, a display device for VR (virtual reality), MR (mixed reality), or AR (augmented reality), an electronic viewfinder (EVF), a small projector, or the like.

[0016] The light-emitting device 10 has a display region and a peripheral region provided around the periphery of the display region. As shown in FIG. 1 , a plurality of sub-pixels 100R, 100G, and 100B are arranged in a matrix within the display region of the light-emitting device 10. The sub-pixel 100R can emit red light, the sub-pixel 100G can emit green light, and the sub-pixel 100B can emit blue light. In the following description, the sub-pixels 100R, 100G, and 100B will be referred to as sub-pixels 100 unless otherwise specified. Therefore, the light-emitting device 10 has a plurality of sub-pixels 100 arranged in a matrix on the substrate 300.

[0017] Furthermore, in this embodiment, one pixel 20 is configured by combining, for example, three types of sub-pixels 100R, 100G, and 100B that emit different light. Note that, in this embodiment, the number and arrangement of the three types of sub-pixels 100R, 100G, and 100B included in one pixel 20 are not particularly limited. Furthermore, in this embodiment, one pixel 20 is not limited to being configured by multiple sub-pixels 100 that emit different light, as described above. For example, in this embodiment, the pixel 20 may be configured by multiple sub-pixels 100 that emit light of the same color, or may be configured by a single sub-pixel 100. Furthermore, the pixel 20 is also the smallest unit (pixel) controlled during light emission control of the light-emitting device 10, and is configured by multiple sub-pixels 100 that are treated as a single unit during control.

[0018] As shown in FIG. 1, a horizontal drive circuit 11 and a vertical drive circuit 12 are provided in the peripheral region of the light emitting device 10 .

[0019] The horizontal driving circuit 11 scans the sub-pixels 100 in row units (in FIG. 1, the direction extending along the X direction is called the row direction) when writing signals to the sub-pixels 100, and writes signals to the scanning lines SCL ｍ The horizontal drive circuit 11 can be configured, for example, by a shift register or the like that shifts (transfers) a start pulse in sequence in synchronization with an input clock pulse.

[0020] The vertical drive circuit 12 also supplies a signal voltage corresponding to brightness information supplied from a signal supply source (not shown) to a signal line DTL ｎ 1, the direction extending along the Y direction is called the column direction) to the sub-pixels 100 selected in column units via the line .

[0021] It should be noted that in the embodiment of the present disclosure, the configuration of the light emitting device 10 is not limited to the configuration shown in Fig. 1. In other words, the configuration shown in Fig. 1 is merely an example, and the light emitting device 10 according to the embodiment of the present disclosure can have various configurations.

[0022] Next, the circuit configuration of the sub-pixel 100 in the mth row and nth column will be described with reference to Fig. 2. Fig. 2 is a schematic circuit diagram for explaining the wiring relationship in the sub-pixel 100 in the mth row and nth column.

[0023] In the light emitting device 10, as described above, the sub-pixels 100 each including a light emitting element ELP are connected to a scanning line SCL extending in the row direction (the X direction in FIG. 1). ｍ and signal lines DTL extending in the column direction (Y direction in FIG. 1). ｎ The sensors are connected to each other and arranged in a two-dimensional matrix.

[0024] 2, the light emitting device 10 further includes a power supply line PS1m that supplies a driving voltage to the sub-pixels 100, and a common power supply line PS2 that is commonly connected to all the sub-pixels 100. ｍ A predetermined driving voltage V is supplied from a power supply (not shown). ｃｃetc. are supplied, and the common voltage V ｃａｔ (for example, ground potential) is supplied.

[0025] Here, the number of scanning lines SCL and the number of power supply lines PS1 are each M. The sub-pixel 100 in the m-th row (where m=1, 2, . . . , P) is connected to the m-th scanning line SCL ｍ , m-th power supply line PS1 ｍ , which constitute one display element row. ｍ and power supply line PS1 ｍ In addition, the number of signal lines DTL is assumed to be N. The sub-pixel 100 in the n-th column (where n=1, 2, . . . , N) is connected to the n-th signal line DTL. ｎ In FIG. 2, the signal line DTL ｎ Hereinafter, the sub-pixel 100 located in the m-th row and n-th column may be referred to as the (n, m)-th sub-pixel 100.

[0026] As described above, the light-emitting device 10 is sequentially scanned row by row by a scanning signal from the horizontal drive circuit 11. Specifically, in the light-emitting device 10, M sub-pixels 100 arranged in the mth row are driven simultaneously. In other words, the timing of emission / non-emission of M sub-pixels 100 arranged along the row direction is controlled for each row to which they belong. For example, if the display frame rate of the light-emitting device 10 is FR (times / second), the scanning period per row (so-called horizontal scanning period) when the light-emitting device 10 is sequentially scanned row by row is less than (1 / FR) × (1 / P) seconds.

[0027] 2, the sub-pixel 100 is composed of a light-emitting element ELP and a drive circuit for driving the light-emitting element ELP. The light-emitting element ELP is an organic electroluminescence light-emitting element. The drive circuit includes a write transistor TR Ｗ , and the driving transistor TR Ｄ , and a capacitance section C1. ＤWhen a current flows through the light emitting element ELP via the transistors, the light emitting element ELP can emit light. Each transistor is formed of, for example, a p-channel field effect transistor.

[0028] As shown in FIG. 2, in the sub-pixel 100, the driving transistor TR Ｄ One of the source / drain regions is connected to one end of the capacitance portion C1 and the power supply line PS1 ｍ The other source / drain region is electrically connected to one end (specifically, the anode electrode) of the light-emitting element ELP. Ｄ The gate electrode of the write transistor TR Ｗ and is electrically connected to the other end of the capacitance portion C1.

[0029] As shown in FIG. 2, one of the source / drain regions of the write transistor TRw is connected to the signal line DTL ｎ and the write transistor TR Ｗ The gate electrode of the scanning line SCL ｍ is electrically connected to

[0030] 2, the other end (specifically, the cathode electrode) of the light-emitting element ELP is electrically connected to a common power supply line PS2. ｃａｔ In FIG. 2, the capacitance of the light-emitting element ELP is represented by the symbol CEL.

[0031] Next, an outline of driving the sub-pixel 100 will be described. ｎ In a state where a voltage corresponding to the brightness of an image to be displayed is supplied to the write transistor TR Ｗ When the write transistor TR is turned on, a voltage corresponding to the luminance is written to the capacitance section C1. Ｗ is turned off, the driving transistor TR Ｄ When a current flows through the light emitting element ELP, the light emitting element ELP emits light.

[0032] In the embodiment of the present disclosure, the configuration of the drive circuit that controls the light emission of the light-emitting element ELP is not limited to the configuration shown in Fig. 2. Therefore, the configuration shown in Fig. 2 is merely an example, and various configurations can be used in the light-emitting device 10 according to the embodiment of the present disclosure.

[0033] <<2. Background to the Creation of the Embodiments of the Present Disclosure>> Next, before describing the embodiments of the present disclosure, the background to the creation of the embodiments of the present disclosure by the present inventors will be described with reference to FIGS. 3 and 4. FIGS. 3 and 4 are cross-sectional views illustrating an example of the configuration of a subpixel 100a according to a comparative example, and more specifically, correspond to a cross section of the subpixel 100a cut along the stacking direction. Furthermore, in FIG. 3, an enlarged view of a portion of the view on the left is shown on the right side of the figure. Note that the comparative example here refers to the subpixel 100a that the present inventors had studied extensively before creating the embodiments of the present disclosure.

[0034] In the comparative example, the light-emitting device 10 has a sub-pixel 100a according to the comparative example as shown in Fig. 3. The sub-pixel 100a mainly has an anode electrode 102 provided on a substrate 300 (not shown in Fig. 3), a light-emitting layer 104 that is stacked on the anode electrode 102 and emits light, and a cathode electrode (not shown) that is stacked on the light-emitting layer 104 and transmits light from the light-emitting layer 104.

[0035] Furthermore, in the comparative example, the outer periphery of the anode electrode 102 is covered with a pixel separation layer 110, and the central portion of the anode electrode 102 exposed from an opening (pixel opening) 112 of the pixel separation layer 110 functions as an electrode. In other words, the pixel separation layer 110 defines a light-emitting region by the pixel opening. Furthermore, the pixel separation layer 110 is formed of, for example, an inorganic insulating material, thereby suppressing current leakage between adjacent sub-pixels 100a.

[0036] In the subpixel 100a according to the comparative example, when a predetermined voltage is supplied to the anode electrode 102 and the cathode electrode, the light-emitting layer 104 sandwiched between the anode electrode 102 and the cathode electrode emits light (the thick arrow in the center of FIG. 3). More specifically, in the comparative example, light is emitted from the light-emitting layer 104 in a direction from the anode electrode 102 toward the cathode electrode. In other words, the light-emitting device 10 is a top-emission type light-emitting device.

[0037] However, in the comparative example, as shown in the enlarged view of Fig. 3, charges may accumulate at the corners of the anode electrode 102, which may result in unintended edge emission (indicated by the thin arrow in the enlarged view of Fig. 3), resulting in a deterioration in the brightness of the light-emitting device 10.

[0038] Furthermore, in the comparative example, as the subpixels 100a become smaller, it becomes more difficult to suppress current leakage between adjacent subpixels 100a using the pixel separation layer 110, as shown in the upper part of Figure 4. If the leakage current cannot be effectively suppressed, some subpixels 100a will emit light due to the leakage current, even though they are controlled not to emit light, resulting in a deterioration in the light-emitting efficiency of the light-emitting device 10. In particular, this deterioration in light-emitting efficiency becomes more noticeable as the driving time of the light-emitting device 10 becomes longer.

[0039] Therefore, in a comparative example, as shown in the lower part of Figure 4, it is conceivable to increase the height of the pixel separation layer 110 to suppress current leakage between adjacent sub-pixels 100a. However, if the height of the pixel separation layer 110 is increased too much, the unevenness of the pixel separation layer 110 will increase the difference in height between the unevenness on the upper surface of the light-emitting layer 104, making it difficult to uniformly stack the cathode electrode on the light-emitting layer 104. For example, in the area circled in the lower part of Figure 4, the thickness of the cathode electrode is likely to be locally thin, and the resistance value of the cathode electrode will be high in that area. Such unevenness in the thickness of the cathode electrode will cause display unevenness in the light-emitting device 10 and lead to deterioration of image quality.

[0040] In view of this situation, the present inventors have conducted extensive research to obtain a light-emitting device 10 that can suppress current leakage between adjacent sub-pixels 100 while suppressing deterioration in the display performance (image quality) of the light-emitting device 10, and have come up with the following embodiments of the present disclosure. Details of the embodiments of the present disclosure created by the present inventors will be described below.

[0041] <<3. Embodiments>> <3.1 Detailed Configuration> First, a detailed configuration of a subpixel 100 according to an embodiment of the present disclosure will be described with reference to FIGS. 5 to 8 . FIG. 5 is a cross-sectional view illustrating an example of the configuration of a subpixel 100 according to an embodiment of the present disclosure, specifically corresponding to a cross section of the subpixel 100 cut along the stacking direction. Furthermore, the right side of FIG. 5 shows an enlarged view of a portion of the diagram on the left. Furthermore, FIG. 6 is a plan view illustrating an example of the configuration of a subpixel 100 according to an embodiment of the present disclosure, specifically corresponding to a plane when the subpixel 100 is viewed from above the substrate 300. Furthermore, the right side of FIG. 6 shows a cross-section of the subpixel 100 taken along line A-A′ shown in the diagram on the left. Furthermore, FIG. 7 is a diagram illustrating experimental data on the degradation of efficiency over time for an embodiment (example) and a comparative example of the present disclosure, and FIG. 8 is an explanatory diagram illustrating the operation of an embodiment of the present disclosure.

[0042] First, in the embodiment of the present disclosure, as described above, the pixel 20 is configured by combining three types of sub-pixels (light-emitting elements) 100R, 100G, and 100B according to the present embodiment, which emit light of different colors. That is, in this embodiment, the light-emitting device 10 also has a plurality of sub-pixels 100 arranged on a substrate 300. Here, the sub-pixel 100R emits red light (e.g., visible light having a wavelength of approximately 640 nm to 770 nm), the sub-pixel 100G emits green light (e.g., visible light having a wavelength of approximately 490 nm to 550 nm), and the sub-pixel 100B emits blue light (e.g., visible light having a wavelength of approximately 430 nm to 490 nm). Note that in this embodiment, the number and arrangement of the three types of sub-pixels 100R, 100G, and 100B included in one pixel 20 are not limited. Furthermore, in this embodiment, the pixel 20 may have sub-pixels 100 that emit light other than red light, blue light, and green light. Furthermore, in this embodiment, each sub-pixel 100 in the pixel 20 may emit light of the same color, or the pixel 20 may be composed of one sub-pixel 100 .

[0043] In this embodiment, as shown in the center of FIG. 5 , the subpixel 100 has, similarly to the comparative example, an anode electrode (an example of a first electrode) 102 provided on a substrate 300 (not shown in FIG. 5 ), a light-emitting layer 104 that is stacked on the anode electrode 102 and emits light, and a cathode electrode (an example of a second electrode) (not shown) that is stacked on the light-emitting layer 104 and transmits light from the light-emitting layer 104.

[0044] Also in this embodiment, the outer periphery (outer edge) of the anode electrode 102 is covered with the pixel separation layer 110, and the central portion of the upper surface of the anode electrode 102 exposed from an opening (pixel opening) 112 of the pixel separation layer 110 functions as an electrode. That is, also in this embodiment, the pixel separation layer 110 defines the light-emitting region by the pixel opening. Also, as in the comparative example, the pixel separation layer 110 is formed from, for example, an inorganic insulating material, thereby suppressing current leakage between adjacent sub-pixels 100.

[0045] Furthermore, in this embodiment, unlike the comparative example, as shown in the enlarged view of Fig. 5 , an insulating film 120 is provided so as to cover at least a part of the inner surface of the opening 112 of the pixel separation layer 110. In this embodiment, by providing the insulating film 120 on the inner surface of the opening 112 of the pixel separation layer 110, the height of the pixel separation layer 110 is kept within a predetermined range, and current leakage between adjacent sub-pixels 100 is suppressed. Hereinafter, the configuration of the sub-pixel 100 according to this embodiment will be described in detail one by one.

[0046] In particular, the substrate 300 can be formed from a glass substrate such as high strain point glass, soda glass, borosilicate glass, forsterite, lead glass, or quartz glass; a semiconductor substrate such as amorphous silicon or polycrystalline silicon; or a resin substrate such as polymethyl methacrylate, polyvinyl alcohol, polyvinyl phenol, polyethersulfone, polyimide, polycarbonate, polyethylene terephthalate, or polyethylene naphthalate.

[0047] The anode electrode 102 may also function as a reflective layer, and is preferably composed of a metal film with as high a reflectivity and as large a work function as possible to enhance light extraction efficiency. Examples of such metal films include metal films containing at least one of simple metal elements and alloys such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), magnesium (Mg), iron (Fe), tungsten (W), and silver (Ag). Specific examples of the alloys include aluminum (Al) alloys such as AlNi alloys and AlCu alloys, and silver (Ag) alloys such as MgAg alloys.

[0048] The anode electrode 102 may also be a multilayer film, for example, having a configuration in which a transparent conductive layer and a light-reflecting layer are stacked. More specifically, the anode electrode 102 may have a configuration in which an aluminum alloy layer is stacked as a first layer (light-reflecting layer) and a transparent conductive layer such as indium tin oxide (ITO) or indium zinc oxide (IZO) is stacked as a second layer (transparent conductive layer).

[0049] Furthermore, the anode electrode 102 is provided for each sub-pixel 100 , and as described above, the outer periphery of the anode electrode 102 is covered with the pixel separation layer 110 .

[0050] Furthermore, in this embodiment, the upper surface of the anode electrode 102 may be flat, or, as shown in the enlarged view of Fig. 5, the outer edge of the upper surface of the anode electrode 102 may have a convex portion 102a that protrudes upward. Furthermore, in this embodiment, the convex portion 102a is preferably provided so that its height is 50 nm or less from the center of the upper surface of the anode electrode 102. The pixel separation layer 110 is then provided so as to cover the side and upper surfaces of the convex portion 102a.

[0051] 5 , in a cross section of the subpixel 100 cut along the stacking direction, the side surface of the convex portion 102a on the central side of the anode electrode 102 may be arc-shaped. Alternatively, in the same cross section, the convex portion 102a may be forward tapered. In this embodiment, by forming the anode electrode 102 in such a shape, electric field concentration at the corners of the anode electrode 102 can be suppressed, and deterioration of the light-emitting layer 104 due to electric field concentration can be avoided.

[0052] The pixel separation layer 110 can be formed of an inorganic insulating film such as silicon oxide (SiOx), silicon nitride (SiNx), or silicon oxynitride (SiON). As described above, in this embodiment, the pixel separation layer 110 also has an opening (pixel opening) 112 that exposes the center of the upper surface of the anode electrode 102, and defines a light-emitting region by partitioning the area of ​​the anode electrode that functions as an electrode. In this embodiment, the planar shape of the opening 112 is not particularly limited, and can be, for example, a substantially rectangular shape, a substantially circular shape (specifically, a circular shape, an elliptical shape, etc.), a substantially polygonal shape (specifically, a triangular shape, a hexagonal shape, etc.), or the like. The light-emitting layer 104, which will be described later, is stacked on the pixel separation layer 110 and the anode electrode 102 and is further formed to fill the opening 112.

[0053] Furthermore, in this embodiment, as shown in the enlarged view of FIG. 5 , the height H of the sidewall of the pixel separation layer 110 on the central side of the upper surface of the anode electrode 102 along the stacking direction of the sub-pixels 100, starting from the central portion of the upper surface of the anode electrode 102, is preferably set to 30 nm or more and 70 nm or less. If the height H is less than 30 nm, the brightness degradation due to the above-mentioned edge emission becomes significant. If the height H is greater than 70 nm, the difference in height between the projections and recesses on the upper surface of the light-emitting layer 104 becomes large, making it difficult to stack the cathode electrode uniformly on the light-emitting layer 104. Therefore, in this embodiment, it is preferable to limit the height H of the pixel separation layer 110 as described above.

[0054] However, reducing the height of the pixel separation layer 110 may result in the pixel separation layer 110 being unable to fully suppress current leakage between adjacent sub-pixels 100. Therefore, in this embodiment, as shown in the enlarged view of FIG. 5 , an insulating film 120 is provided on the inner surface of the opening 112 of the pixel separation layer 110, thereby suppressing current leakage between adjacent sub-pixels 100.

[0055] The insulating film 120 is made of, for example, a metal oxide film or an organic film. Specifically, the insulating film 120 can be made of a metal oxide film containing at least one metal element selected from the group consisting of aluminum (Al), indium (In), tin (Sn), and titanium (Ti). Alternatively, the insulating film 120 can be made of an organic film containing at least one compound selected from the group consisting of carbonyl compounds, ester compounds, bromine compounds, iodine compounds, and fluorine compounds.

[0056] In the present embodiment, the insulating film 120 is not limited to being provided so as to cover a portion of the inner surface of the opening 112 of the pixel separation layer 110. In the present embodiment, for example, the insulating film 120 may cover the entire inner surface of the opening 112 of the pixel separation layer 110, or may be provided so as to cover a portion of the upper surface of the pixel separation layer 110. However, in the present embodiment, in order to fully exert the effect of suppressing current leakage, it is preferable that the insulating film 120 extend to a height of 20 nm or more from the interface between the anode electrode 102 and the pixel separation layer 110. That is, in the present embodiment, the length L of the insulating film 120 along the stacking direction of the sub-pixels 100 (see the enlarged view in FIG. 5 ) is preferably 20 nm or more.

[0057] Furthermore, in this embodiment, the film thickness t of the insulating film 120 (enlarged view of FIG. 5) is preferably 10 nm or more in order to fully exert the effect of suppressing current leakage between adjacent sub-pixels 100 .

[0058] In this embodiment, the light-emitting layer 104 is formed above the anode electrode 102 as a single continuous layer spanning the plurality of sub-pixels 100. In other words, the light-emitting layer 104 is formed as a single layer shared by the plurality of sub-pixels 100. In this embodiment, by forming the light-emitting layer 104 as a single layer spanning the plurality of sub-pixels 100, the number of processes, material costs, and the like can be reduced. Note that in the following description, the sub-pixel 100 according to this embodiment will be described as having a light-emitting layer 104 made of an organic material, but this embodiment is not limited to this and the sub-pixel 100 may have a light-emitting layer 104 made of an inorganic material.

[0059] In this embodiment, the light-emitting layer 104 has a white-type structure in which, for example, light-emitting layers of three colors, red, green, and blue, are stacked across all of the sub-pixels 100, that is, white light is extracted. Alternatively, in this embodiment, the light-emitting layer 104 may be a light-emitting layer that emits light of any one of the three colors, red, green, and blue, or light of another color.

[0060] The light-emitting layer 104 has, for example, a so-called one-stack structure in which a hole injection layer, a hole transport layer, a red light-emitting layer, an emission separation layer, a blue light-emitting layer, a green light-emitting layer, and an electron transport layer are stacked in this order from bottom to top. Each light-emitting layer may have a multilayer structure in which different light-emitting materials that emit light of the same color are stacked. By stacking light-emitting materials with different properties and separating their functions, local degradation within the light-emitting layer is suppressed, resulting in a highly efficient, long-life element. Below, a one-stack structure will be described as an example of the light-emitting layer 104 according to this embodiment.

[0061] The hole injection layer can be made of, for example, hexaazatriphenylene (HAT).

[0062] The hole transport layer can be composed of, for example, α-NPD [N,N'-di(1-naphthalyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine].

[0063] In the red light-emitting layer, a portion of holes injected from the anode electrode 102 via the hole injection layer and the hole transport layer and a portion of electrons injected from the cathode electrode (not shown) via the electron transport layer are recombined under application of an electric field, thereby generating red light. The red light-emitting layer contains, for example, at least one of a red light-emitting material, a hole transport material, an electron transport material, and a positive and negative charge transport material. The red light-emitting material may be fluorescent or phosphorescent. Specifically, the red light-emitting layer may be composed of, for example, 4,4-bis(2,2-diphenylvinyl)biphenyl (DPVBi) mixed with 30% by weight of 2,6-bis[(4'-methoxydiphenylamino)styryl]-1,5-dicyanonaphthalene (BSN).

[0064] The emission separation layer is a layer for adjusting the injection of carriers into the emission layers, and the balance of light emission of each color is adjusted by injecting electrons and holes into each emission layer through the emission separation layer. The emission separation layer can be composed of, for example, a 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl derivative.

[0065] When an electric field is applied, the blue light-emitting layer generates blue light by recombining a portion of holes injected from the anode electrode 102 via the hole injection layer, hole transport layer, and emission separation layer with a portion of electrons injected from the cathode electrode (not shown) via the electron transport layer. The blue light-emitting layer contains, for example, at least one of a blue light-emitting material, a hole transport material, an electron transport material, and a positive and negative charge transport material. The blue light-emitting material may be fluorescent or phosphorescent. Specifically, the blue light-emitting layer may be composed of, for example, DPVBi mixed with 2.5 wt % of 4,4'-bis[2-{4-(N,N-diphenylamino)phenyl}vinyl]biphenyl (DPAVBi).

[0066] When an electric field is applied, some of the holes injected from the anode electrode 102 via the hole injection layer, hole transport layer, and emission separation layer recombine with some of the electrons injected from the cathode electrode (not shown) via the electron transport layer, generating green light. The green light-emitting layer contains, for example, at least one of a green light-emitting material, a hole transport material, an electron transport material, and a positive and negative charge transport material. The green light-emitting material may be fluorescent or phosphorescent. Specifically, the green light-emitting layer may be composed of, for example, DPVBi mixed with 5 wt % coumarin 6.

[0067] The electron transport layer may be made of, for example, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Alq3 (aluminum quinolinol), Bphen (bathophenanthroline), etc. The electron transport layer is made up of at least one layer, and may include an electron transport layer doped with an alkali metal or alkaline earth metal.

[0068] The electron transport layer doped with an alkali metal or alkaline earth metal can be configured by doping, for example, 0.5 to 15 wt % of a host material such as BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Alq3 (aluminum quinolinol), or Bphen (bathophenanthroline) with, for example, 0.5 to 15 wt % of an alkali metal such as lithium (Li), sodium (Na), potassium (K), rubidium (Rb), or cesium (Cs) or an alkaline earth metal such as magnesium (Mg), calcium (Ca), strontium (Sr), or barium (Ba) as a dopant material by co-evaporation.

[0069] An electron injection layer may be provided between the electron transport layer and the cathode electrode (not shown). The electron injection layer is intended to enhance electron injection from the cathode and may be composed of an alkali metal or alkaline earth metal, a compound containing the alkali metal or alkaline earth metal, or a mixture containing the alkali metal or alkaline earth metal. For example, the electron injection layer may be composed of lithium (Li), lithium fluoride (LiF), or the like.

[0070] A buffer layer may be provided between the electron transport layer and the cathode electrode (not shown). The buffer layer is intended to mitigate process damage during the deposition of the cathode electrode. The buffer layer may be made of, for example, Mg, magnesium silver alloy (MgAg), Ca, Li, LiF, or lithium carbonate (Li ２ CO ３ ), Cs, cesium carbonate (Cs ２ CO ３ The alkali metal or alkaline earth metal may be a simple substance, a compound containing the alkali metal or alkaline earth metal, or a mixture containing the alkali metal or alkaline earth metal.

[0071] The thickness of each layer constituting the light-emitting layer 104 is preferably, for example, 1 to 20 nm for the hole injection layer, 10 to 200 nm for the hole transport layer, 5 to 50 nm for the light-emitting layer, and 10 to 200 nm for the electron transport layer. Furthermore, the thickness of the light-emitting layer 104 and each of its constituent layers is preferably set to a value that enables the optical thickness of each layer to operate in accordance with the wavelength (color) of light emitted by each sub-pixel 100.

[0072] The cathode electrode (not shown) can be made of a transparent conductive material that has good light transmittance and a small work function. In the following description, the term "transparent electrode" also includes a semi-transparent electrode. For example, the cathode electrode can be made of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO), and its film thickness is preferably 10 to 500 nm. In this embodiment, the cathode electrode is formed on the light-emitting layer 104 as a single continuous layer spanning multiple subpixels 100. In other words, the cathode electrode is formed as a single layer shared by multiple subpixels 100. In this embodiment, by forming the cathode electrode as a single layer spanning multiple subpixels 100, the number of processes can be reduced.

[0073] Furthermore, in this embodiment, a protective film (not shown) that transmits light from the light-emitting layer 104 may be provided on the cathode electrode (not shown). The protective film provided on the cathode electrode is made of a material with a high refractive index. For example, the protective film is made of a material with a refractive index of approximately 1.7 to 2.1 for light having a wavelength of approximately 450 nm at room temperature. More specifically, the protective film is made of, for example, a nitride film such as silicon nitride (SiN), a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO), or a transparent organic material.

[0074] Furthermore, although not shown in the drawings, a color filter (not shown) and an on-chip lens (not shown) may be provided above a protective film (not shown) for each sub-pixel 100 or for multiple sub-pixels 100 in common. Specifically, the color filter may be formed of a color filter that transmits a red wavelength component, a color filter that transmits a green wavelength component, or a color filter that transmits a blue wavelength component. For example, the color filter may be formed of a material in which a pigment or a dye is dispersed in a transparent binder such as silicone. Furthermore, the on-chip lens may be formed of a styrene-based resin, an acrylic-based resin, a styrene-acrylic copolymer-based resin, a siloxane-based resin, or the like.

[0075] Next, the planar configuration of the sub-pixel 100 according to the embodiment of the present disclosure will be described with reference to Fig. 6. The left side of Fig. 6 shows a plan view of the sub-pixel 100, and the right side of Fig. 6 shows a cross section taken along line A-A' shown on the left side of Fig. 6.

[0076] 6 , in this embodiment, the sub-pixels 100R that emit red light, the sub-pixels 100G that emit green light, and the sub-pixels 100B that emit blue light are arranged in a square array on the substrate 300. The square array is an array in which four sub-pixels 100 are arranged at the four corners of a square. In this embodiment, the sub-pixels 100R that emit red light, the sub-pixels 100G that emit green light, and the sub-pixels 100B that emit blue light may be arranged in a stripe pattern or a delta array (in which each sub-pixel 100 is arranged at the vertex of a triangle), and are not particularly limited thereto.

[0077] Furthermore, in this embodiment, the planar shape of the opening 112 of the pixel separation layer 110 may be, for example, rectangular or hexagonal, and is not particularly limited. More specifically, in the example shown in Fig. 6, the openings 112 of the sub-pixel 100R that emits red light, the sub-pixel 100G that emits green light, and the sub-pixel 100B that emits blue light have rectangular or hexagonal planar shapes that are different from one another.

[0078] In addition, in this embodiment, as will be described later, the planar shape of the opening 112 of the pixel separation layer 110 can be, for example, substantially rectangular, substantially circular, substantially polygonal, or the like, and is not particularly limited.

[0079] As described above, in this embodiment, by providing the insulating film 120 so as to cover at least a portion of the inner surface of the opening 112 of the pixel separation layer 110, it is possible to suppress current leakage between adjacent sub-pixels 100 while limiting the height of the pixel separation layer 110 to a predetermined range. Hereinafter, details of the effect of this embodiment will be described with reference to FIG. 7 which shows experimental data on deterioration of efficiency over time in an embodiment (example) and a comparative example of the present disclosure, and FIG. 8 which is an explanatory diagram for explaining the action of an embodiment of the present disclosure.

[0080] 7 shows data from an experiment conducted by the present inventors on the change in the degree of degradation of luminous efficiency (efficiency degradation rate) versus the drive time (power-on time) of the light-emitting device 10. Here, as a comparative example, the results are shown for a subpixel 100a in which the insulating film 120 is not provided on the inner surface of the opening 112 of the pixel separation layer 110. Also, FIG. 7 shows, as examples of the embodiment of the present disclosure, the results of an example in which the length L (enlarged view of FIG. 5 ) of the insulating film 120 provided on the inner surface of the opening 112 of the pixel separation layer 110 is 20 nm and an example in which the length L is 30 nm.

[0081] 7, in the comparative example in which the insulating film 120 is not provided on the inner surface of the opening 112, current leakage between adjacent subpixels 100 could not be suppressed, and a significant deterioration in luminous efficiency occurred over time. Also, in the result of FIG. 7, in the example in which the length L of the insulating film 120 was 20 nm, a deterioration in luminous efficiency occurred over a long period of time, but the luminous efficiency did not deteriorate as compared to the comparative example. Furthermore, in the result of FIG. 7, in the example in which the length L of the insulating film 120 was 30 nm, current leakage between adjacent subpixels 100 was effectively suppressed, and the luminous efficiency hardly deteriorated even over a long period of time, unlike the comparative example.

[0082] That is, as shown in the left side of Figure 8, in the comparative example in which the insulating film 120 is not provided on the inner surface of the opening 112 of the pixel separation layer 110, current leakage between adjacent subpixels 100 could not be suppressed, and it is thought that deterioration in luminance efficiency became noticeable over time. Also, as shown in the center of Figure 8, in the example in which the length L of the insulating film 120a was 20 nm, current leakage could be suppressed compared to the comparative example, but because the length L of the insulating film 120a was short, this effect was not fully exerted, and it is thought that deterioration in luminance efficiency became apparent over a long period of time. And, as shown in the right side of Figure 8, in the example in which the length L of the insulating film 120a was 30 nm, it is thought that the insulating film 120 fully suppressed current leakage between adjacent subpixels 100, and there was almost no deterioration in luminance efficiency even over a long period of time.

[0083] As described above, in this embodiment, by providing the insulating film 120 so as to cover at least a portion of the inner surface of the opening 112 of the pixel separation layer 110, it is possible to suppress current leakage between adjacent sub-pixels 100 while limiting the height of the pixel separation layer 110 to a predetermined range. As a result, according to this embodiment, there is no possibility that a sub-pixel 100 will emit light due to leakage current despite being controlled not to emit light, and it is possible to suppress deterioration in the light-emitting efficiency of the light-emitting device 10.

[0084] Furthermore, in this embodiment, the height H of the pixel separation layer 110 can be limited to a predetermined range, which prevents large differences in height between the projections and recesses on the upper surface of the light-emitting layer 104, making it easy to uniformly stack the cathode electrode on the light-emitting layer 104. Furthermore, in this embodiment, the cathode electrode can be uniformly stacked, which prevents the cathode electrode from becoming locally thin and its resistance from increasing. As a result, this embodiment prevents display unevenness in the light-emitting device 10 caused by unevenness in the cathode electrode thickness, and suppresses deterioration of the display performance (image quality) of the light-emitting device 10.

[0085] That is, according to this embodiment, it is possible to suppress current leakage between adjacent sub-pixels 100 while suppressing deterioration in the performance of the light emitting device 10 .

[0086] It should be noted that this embodiment is not limited to the configurations shown in FIGS. 5 and 6, and can be modified as appropriate according to desired characteristics.

[0087] 9 to 11 are plan views for explaining an example of the configuration of the sub-pixel 100 according to a modification of the embodiment of the present disclosure, and correspond to a plan view of the sub-pixel 100 as viewed from above the substrate 300. Furthermore, the cross section taken along line A-A' in each figure corresponds to the cross section shown in the enlarged view of FIG.

[0088] In this modification, as shown in Figures 9 and 10 , the planar shape of the opening 112 of the pixel separation layer 110 may be, for example, rectangular. Furthermore, in this modification, as shown in Figures 9 and 10 , the openings 112 of the sub-pixel 100R that emits red light, the sub-pixel 100G that emits green light, and the sub-pixel 100B that emits blue light may have different opening areas. That is, by changing the opening areas of the sub-pixels 100R, 100G, and 100B, the areas of the light-emitting regions can be made different from one another. Furthermore, in the example shown in Figure 9 , the sub-pixels 100R, 100G, and 100B are arranged in a striped pattern.

[0089] 11 , the planar shape of the opening 112 in the pixel separation layer 110 may be, for example, a polygonal shape (hexagonal shape in FIG. 11 ). Furthermore, although not shown in the drawings, the planar shape of the opening 112 in the pixel separation layer 110 in this modification is not particularly limited and may be a triangular shape, a circular shape, an elliptical shape, or the like. In the example shown in FIG. 11 , the sub-pixels 100R, 100G, and 100B are arranged at the vertices of a triangle, thereby forming a delta arrangement.

[0090] 3.3 Manufacturing Method Next, a method for manufacturing the sub-pixel 100 according to this embodiment will be described with reference to Fig. 12. Fig. 12 is an explanatory diagram for describing the method for manufacturing the sub-pixel 100 according to the embodiment of the present disclosure, and corresponds to the cross-sectional view of Fig. 5.

[0091] First, as shown in the upper left of Fig. 12, a patterned anode electrode 102 is formed on a substrate 300. Furthermore, as shown in the lower left of Fig. 12, a pixel separation layer 110 is formed on the anode electrode 102. At this time, the pixel separation layer 110 is formed so as to fill the gap between adjacent anode electrodes 102.

[0092] 12 , an opening 112 is formed in the pixel separation layer 110 so as to expose the center of the upper surface of the anode electrode 102. Thereafter, an insulating film 120 is formed on the inner side surface of the opening 112 in the pixel separation layer 110 without performing cleaning to remove etching residues.

[0093] Thereafter, the light-emitting layer 104, the cathode electrode, and the like are sequentially stacked on the anode electrode 102 and the pixel separation layer 110, thereby obtaining the sub-pixel 100 according to this embodiment.

[0094] The subpixel 100 according to the embodiment of the present disclosure can be manufactured using methods, devices, and conditions that are used in the manufacture of general semiconductor devices.

[0095] Examples of the above-mentioned method include a PVD (Physical Vapor Deposition) method, a CVD (Chemical Vapor Deposition) method, and an ALD (Atomic Layer Deposition) method. Examples of PVD methods include vacuum deposition, EB (electron beam) deposition, various sputtering methods (magnetron sputtering, RF (radio frequency)-DC (direct current) combined bias sputtering, ECR (electron cyclotron resonance) sputtering, facing target sputtering, high frequency sputtering, etc.), ion plating, laser ablation, molecular beam epitaxy (MBE), and laser transfer. Examples of CVD methods include plasma CVD, thermal CVD, metal organic (MO) CVD, and photo CVD. Other methods include electroplating, electroless plating, spin coating, dipping, casting, microcontact printing, drop casting, various printing methods such as screen printing, inkjet printing, offset printing, gravure printing, and flexographic printing, stamping, spraying, and various coating methods such as air doctor coater, blade coater, rod coater, knife coater, squeeze coater, reverse roll coater, transfer roll coater, gravure coater, kiss coater, cast coater, spray coater, slit orifice coater, and calendar coater. Furthermore, patterning methods include chemical etching such as shadow mask, laser transfer, and photolithography, and physical etching using ultraviolet light or laser. Additionally, planarization techniques include CMP (Chemical Mechanical Polishing), laser planarization, and reflow.

[0096] <<4. Summary>> As described above, in the embodiment of the present disclosure, by providing the insulating film 120 so as to cover at least a portion of the inner surface of the opening 112 of the pixel separation layer 110, it is possible to suppress current leakage between adjacent sub-pixels 100 while limiting the height of the pixel separation layer 110 to a predetermined range. As a result, according to the embodiment, there is no possibility that a sub-pixel 100 will emit light due to leakage current despite being controlled not to emit light, and it is possible to suppress deterioration in the light-emitting efficiency of the light-emitting device 10.

[0097] Furthermore, in this embodiment, the height of the pixel separation layer 110 can be limited to a predetermined range, which prevents large differences in height between the projections and recesses on the upper surface of the light-emitting layer 104, making it easy to uniformly stack the cathode electrode on the light-emitting layer 104. Furthermore, in this embodiment, the cathode electrode can be uniformly stacked, which prevents the cathode electrode from becoming locally thin and its resistance from increasing. As a result, this embodiment prevents display unevenness in the light-emitting device 10 caused by unevenness in the cathode electrode thickness, and suppresses deterioration of the display performance (image quality) of the light-emitting device 10.

[0098] That is, according to this embodiment, it is possible to suppress current leakage between adjacent sub-pixels 100 while suppressing deterioration in the performance of the light emitting device 10 .

[0099] Furthermore, the light emitting device 10 according to the embodiment of the present disclosure can be applied to, for example, a display device for VR (Virtual Reality), MR (Mixed Reality), or AR (Augmented Reality), a display device such as a smartphone or a television device, an electronic viewfinder (EVF), a small projector, etc. The light emitting device 10 can also be applied to various lighting devices.

[0100] Furthermore, the sub-pixel 100 according to the embodiment of the present disclosure may have a structure in which the stacking order of the anode electrode 102 and the cathode electrode is reversed.

[0101] <<5. Modifications>> <5.1 Modification 1> Next, as a modification of the embodiment of the present disclosure, a modification regarding the relationship between the normal LN passing through the center of the sub-pixel 100, the normal LN' passing through the center of the lens member, and the normal LN" passing through the center of the wavelength selection unit will be described with reference to FIGS. 13A to 13G. FIGS. 13A to 13G are conceptual diagrams for explaining the relationship between the normal LN passing through the center of the light-emitting unit, the normal LN' passing through the center of the lens member, and the normal LN" passing through the center of the wavelength selection unit. In the following description, the center of the sub-pixel 100 will be referred to as the center of the light-emitting unit.

[0102] In an embodiment of the present disclosure, the size of a wavelength selection section (e.g., a color filter) may be changed as appropriate in accordance with the light emitted by the subpixel 100. Furthermore, when a light absorption layer (black matrix layer) is provided between the wavelength selection sections (e.g., color filters) of adjacent subpixels 100, the size of the light absorption layer (black matrix layer) may be changed as appropriate in accordance with the light emitted by the subpixel 100. Furthermore, the size of the wavelength selection section (e.g., a color filter) may be adjusted by adjusting the distance (offset amount) d between the normal line passing through the center of the subpixel 100 and the normal line passing through the center of the color filter. ０ The planar shape of the wavelength selection unit (for example, a color filter) may be the same as, similar to, or different from the planar shape of the lens member (for example, an on-chip lens).

[0103] For example, as shown in FIG. 13A, the normal line LN passing through the center of the light-emitting unit, the normal line LN″ passing through the center of the wavelength selection unit, and the normal line LN′ passing through the center of the lens member may be made to coincide with each other. In other words, the distance (offset amount) D between the normal line passing through the center of the light-emitting unit and the normal line passing through the center of the lens member may be set to be equal to or larger than the normal line LN″. ０ and the distance (offset amount) d between the normal line passing through the center of the light emitting section and the normal line passing through the center of the wavelength selecting section. ０ and can be equal to 0 (zero).

[0104] Also, for example, as shown in FIG. 13B, the normal line LN passing through the center of the light emitting section and the normal line LN" passing through the center of the wavelength selecting section are coincident, but the normal line LN passing through the center of the light emitting section and the normal line LN" passing through the center of the wavelength selecting section do not have to be coincident with the normal line LN' passing through the center of the lens member. In other words, D ０ ≠d ０ = 0.

[0105] Also, for example, as shown in FIG. 13C, the normal line LN passing through the center of the light emitting section, the normal line LN" passing through the center of the wavelength selecting section, and the normal line LN' passing through the center of the lens member may not coincide with each other, and the normal line LN" passing through the center of the wavelength selecting section and the normal line LN' passing through the center of the lens member may coincide with each other. In other words, D ０ = d ０ >0.

[0106] Also, for example, as shown in FIG. 13D, a normal line LN passing through the center of the light emitting section, a normal line LN" passing through the center of the wavelength selecting section, and a normal line LN' passing through the center of the lens member do not coincide with each other, and a normal line LN' passing through the center of the lens member does not coincide with the normal line LN passing through the center of the light emitting section and the normal line LN" passing through the center of the wavelength selecting section. Here, it is preferable that the center of the wavelength selecting section (shown by a black circle in FIG. 13D) is located on a straight line LL connecting the center of the light emitting section and the center of the lens member (shown by a black circle in FIG. 13D). Specifically, the distance from the center of the light emitting section to the center of the wavelength selecting section in the thickness direction is LL. １ , the distance from the center of the wavelength selection portion to the center of the lens member in the thickness direction is LL ２ When this is done, D ０ >d ０ > 0, and taking into account manufacturing variations, d ０ :D ０ =LL １ : (LL １ +LL ２ ) is preferably satisfied.

[0107] In addition, the stacking relationship between the wavelength tip portion and the lens member may be reversed. In such a case, for example, as shown in FIG. 13E, the normal line LN passing through the center of the light emitting portion, the normal line LN″ passing through the center of the wavelength selecting portion, and the normal line LN′ passing through the center of the lens member may be made to coincide. In other words, D ０ = d ０ = 0.

[0108] Also, for example, as shown in FIG. 13F, the normal line LN passing through the center of the light emitting section, the normal line LN" passing through the center of the wavelength selecting section, and the normal line LN' passing through the center of the lens member may not coincide, and the normal line LN" passing through the center of the wavelength selecting section and the normal line LN' passing through the center of the lens member may coincide. In other words, D ０ = d ０ >0.

[0109] Furthermore, as shown in the conceptual diagram of FIG. 13G, a normal line LN passing through the center of the light-emitting section, a normal line LN" passing through the center of the wavelength selection section, and a normal line LN' passing through the center of the lens member do not coincide with each other, and a normal line LN' passing through the center of the lens member does not coincide with the normal line LN passing through the center of the light-emitting section and the normal line LN" passing through the center of the wavelength selection section. Here, it is preferable that the center of the wavelength selection section is located on a straight line LL connecting the center of the light-emitting section and the center of the lens member. Specifically, the distance from the center of the light-emitting section in the thickness direction to the center of the wavelength selection section (shown by a black circle in FIG. 13G) is defined as LL. １ , the distance from the center of the wavelength selection portion in the thickness direction to the center of the lens member (shown by a black circle in FIG. 13G) is LL ２ When this is the case, d ０ >D ０ >0, and taking into account manufacturing variations, D ０ :d ０ =LL ２ : (LL １ +LL ２ ) is preferably satisfied.

[0110] 5.2 Modification 2 The subpixel 100 used in the light-emitting device according to the embodiment of the present disclosure described above may be configured to include a resonator structure that resonates light generated in the light-emitting layer 104 (organic layer 204). Hereinafter, the resonator structure will be described with reference to FIGS. 14 to 20 . FIG. 14 is a schematic cross-sectional view illustrating a first example of the resonator structure, FIG. 15 is a schematic cross-sectional view illustrating a second example of the resonator structure, and FIG. 16 is a schematic cross-sectional view illustrating a third example of the resonator structure. Furthermore, FIG. 17 is a schematic cross-sectional view illustrating a fourth example of the resonator structure, and FIG. 18 is a schematic cross-sectional view illustrating a fifth example of the resonator structure. Furthermore, FIG. 19 is a schematic cross-sectional view illustrating a sixth example of the resonator structure, and FIG. 20 is a schematic cross-sectional view illustrating a seventh example of the resonator structure.

[0111] 14 is a schematic cross-sectional view illustrating a first example of a resonator structure. In the first example, the first electrode (e.g., anode electrode) 202 is formed to have a common film thickness in each sub-pixel 100. The same is true for the second electrode (e.g., cathode electrode) 206.

[0112] 14 , a reflector 401 is disposed below the first electrode 202 of the subpixel 100, with an optical adjustment layer 402 sandwiched therebetween. A resonator structure is formed between the reflector 401 and the second electrode 206, which resonates light generated by the organic layer 204 (more specifically, the light-emitting layer 104).

[0113] The reflector 401 is formed to have a common film thickness in each sub-pixel 100. The film thickness of the optical adjustment layer 402 varies depending on the color to be displayed by the sub-pixel 100. By having the optical adjustment layers 402R, 402G, and 402B have different film thicknesses, it is possible to set an optical distance that produces optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0114] 14 , the reflectors 401 in the sub-pixels 100R, 100G, and 100B are arranged so that their upper surfaces are aligned. As described above, the film thickness of the optical adjustment layer 402 differs depending on the color to be displayed by the sub-pixel 100, and therefore the position of the upper surface of the second electrode 206 differs depending on the type of the sub-pixel 100R, 100G, and 100B.

[0115] The reflector 401 can be formed using, for example, a metal such as aluminum (Al), silver (Ag), or copper (Cu), or an alloy containing these as a main component.

[0116] The optical adjustment layer 402 can be made of an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiOxNy), or an organic resin material such as an acrylic resin or a polyimide resin. The optical adjustment layer 402 may be a single layer or a laminated film made of a plurality of these materials. Furthermore, the number of layers may vary depending on the type of sub-pixel 100.

[0117] The first electrode 202 can be formed using a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0118] The second electrode 206 preferably functions as a semi-transmissive reflective film. The second electrode 206 can be formed using magnesium (Mg) or silver (Ag), a magnesium-silver alloy (MgAg) containing these as main components, or an alloy containing an alkali metal or an alkaline earth metal.

[0119] 15 is a schematic cross-sectional view illustrating a second example of the resonator structure. In the second example, the first electrode 202 and the second electrode 206 are formed to have the same film thickness in each sub-pixel 100.

[0120] Also in the second example, a reflector 401 is disposed below the first electrode 202 of the subpixel 100, with an optical adjustment layer 402 sandwiched therebetween. A resonator structure that resonates light generated by the organic layer 204 is formed between the reflector 401 and the second electrode 206. As in the first example, the reflector 401 is formed to have a common film thickness in each subpixel 100, and the film thickness of the optical adjustment layer 402 differs depending on the color that the subpixel 100 is to display.

[0121] In the first example shown in Figure 14, the upper surfaces of the reflectors 401 in the sub-pixels 100R, 100G, and 100B are arranged to be aligned, and the position of the upper surface of the second electrode 206 differs depending on the type of the sub-pixels 100R, 100G, and 100B.

[0122] 15 , the upper surfaces of the second electrodes 206 are aligned in the sub-pixels 100R, 100G, and 100B. To align the upper surfaces of the second electrodes 206, the upper surfaces of the reflectors 401 in the sub-pixels 100R, 100G, and 100B are aligned differently depending on the type of the sub-pixels 100R, 100G, and 100B. Therefore, the lower surface of the reflector 401 has a stepped shape that corresponds to the type of the sub-pixels 100R, 100G, and 100B.

[0123] The materials constituting the reflector 401, the optical adjustment layer 402, the first electrode 202 and the second electrode 206 are the same as those described in the first example, and therefore will not be described again.

[0124] 16 is a schematic cross-sectional view illustrating a third example of the resonator structure. In the third example, the first electrode 202 and the second electrode 206 are formed to have the same film thickness in each sub-pixel 100.

[0125] Also in the third example, a reflector 401 is disposed below the first electrode 202 of the sub-pixel 100, with an optical adjustment layer 402 sandwiched therebetween. A resonator structure that resonates light generated by the organic layer 204 is formed between the reflector 401 and the second electrode 206. As in the first and second examples, the film thickness of the optical adjustment layer 402 varies depending on the color to be displayed by the sub-pixel 100. As in the second example, the position of the top surface of the second electrode 206 is aligned in the sub-pixels 100R, 100G, and 100B.

[0126] In the second example shown in FIG. 15, in order to align the upper surfaces of the second electrodes 206, the lower surface of the reflector 401 has a stepped shape corresponding to the type of the sub-pixels 100R, 100G, and 100B.

[0127] 16, the film thickness of the reflector 401 is set to be different depending on the type of the sub-pixels 100R, 100G, and 100B. More specifically, the film thickness is set so that the bottom surfaces of the reflectors 401R, 401G, and 401B are aligned.

[0128] The materials constituting the reflector 401, the optical adjustment layer 402, the first electrode 202 and the second electrode 206 are the same as those described in the first example, and therefore will not be described again.

[0129] (Fourth Example of Resonator Structure) FIG. 17 is a schematic cross-sectional view for explaining a fourth example of the resonator structure.

[0130] 14 , the first electrode 202 and the second electrode 206 of the subpixel 100 are formed to have the same film thickness. A reflector 401 is disposed below the first electrode 202 of the subpixel 100 with an optical adjustment layer 402 sandwiched therebetween.

[0131] In contrast to this, in the fourth example shown in FIG. 17, the optical adjustment layer 402 is omitted, and the film thickness of the first electrode 202 is set to differ depending on the type of the sub-pixels 100R, 100G, and 100B.

[0132] The reflector 401 is formed to have a common film thickness in each sub-pixel 100. The film thickness of the first electrode 202 varies depending on the color to be displayed by the sub-pixel 100. By having the first electrodes 202R, 202G, and 202B have different film thicknesses, it is possible to set an optical distance that generates optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0133] The materials constituting the reflector 401, the first electrode 202 and the second electrode 206 are the same as those described in the first example, and therefore a description thereof will be omitted.

[0134] (Resonator Structure: Fifth Example) FIG. 18 is a schematic cross-sectional view for explaining a fifth example of the resonator structure.

[0135] 14 , the first electrode 202 and the second electrode 206 are formed to have the same film thickness in each sub-pixel 100. A reflector 401 is disposed below the first electrode 202 of the sub-pixel 100 with an optical adjustment layer 402 sandwiched therebetween.

[0136] 18 , the optical adjustment layer 402 is omitted, and instead, an oxide film 404 is formed on the surface of the reflector 401. The thickness of the oxide film 404 is set to differ depending on the type of the sub-pixels 100R, 100G, and 100B.

[0137] The thickness of the oxide film 404 varies depending on the color to be displayed by the sub-pixel 100. By having the oxide films 404R, 404G, and 404B have different thicknesses, it is possible to set an optical distance that produces optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0138] The oxide film 404 is a film obtained by oxidizing the surface of the reflector 401, and is made of, for example, aluminum oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, etc. The oxide film 404 functions as an insulating film for adjusting the optical path length (optical distance) between the reflector 401 and the second electrode 206.

[0139] The oxide film 404, whose thickness varies depending on the type of the sub-pixels 100R, 100G, and 100B, can be formed, for example, as follows.

[0140] First, a container is filled with an electrolyte, and the substrate on which the reflector 401 is formed is immersed in the electrolyte. An electrode is disposed so as to face the reflector 401.

[0141] Then, a positive voltage is applied to the reflector 401 with the electrode as a reference, and the reflector 401 is anodized. The thickness of the oxide film formed by anodization is proportional to the voltage value applied to the electrode. Therefore, anodization is performed while voltages corresponding to the types of sub-pixels 100R, 100G, and 100B are applied to the reflectors 401R, 401G, and 401B, respectively. This allows oxide films 404 with different thicknesses to be formed simultaneously.

[0142] The materials constituting the reflector 401, the first electrode 202 and the second electrode 206 are the same as those described in the first example, and therefore a description thereof will be omitted.

[0143] (Cavity Resonator Structure: Sixth Example) FIG. 19 is a schematic cross-sectional view illustrating a sixth example of the cavity resonator structure. In the sixth example, the subpixel 100 is configured by stacking a first electrode 202, an organic layer 204, and a second electrode 206. However, in the sixth example, the first electrode 202 is formed so as to function both as an electrode and a reflector. The first electrode (also known as reflector) 202 is formed from a material having an optical constant selected according to the type of subpixel 100R, 100G, or 100B. By varying the phase shift caused by the first electrode (also known as reflector) 202, it is possible to set an optical distance that generates optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0144] The first electrode (also serving as a reflector) 202 can be made of a metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy containing any of these as a main component. For example, the first electrode (also serving as a reflector) 202R of the subpixel 100R can be made of copper (Cu), and the first electrode (also serving as a reflector) 202G of the subpixel 100G and the first electrode (also serving as a reflector) 202B of the subpixel 100B can be made of aluminum.

[0145] The material constituting the second electrode 206 is the same as that described in the first example, and therefore a description thereof will be omitted.

[0146] (Resonator Structure: Seventh Example) Figure 20 is a schematic cross-sectional view illustrating a seventh example of the resonator structure. The seventh example is basically a configuration in which the sixth example is applied to the sub-pixels 100R and 100G, and the first example is applied to the sub-pixel 100B. Even with this configuration, it is possible to set an optical distance that generates optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0147] The first electrodes (which also serve as reflectors) 202R and 202G used in the sub-pixels 100R and 100G can be made of a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy containing these as the main component.

[0148] The materials constituting the reflector 401B, the optical adjustment layer 402B, and the first electrode 202B used in the sub-pixel 100B are the same as those described in the first example, and therefore description thereof will be omitted.

[0149] <<6. Application Examples>> For example, the technology according to the present disclosure may be applied to the display units of various electronic devices, etc. Therefore, examples of electronic devices to which the technology can be applied will be described below.

[0150] 21A is a front view showing an example of the appearance of a digital still camera 500, and Fig. 21B is a rear view showing an example of the appearance of the digital still camera 500. This digital still camera 500 is an interchangeable lens single-lens reflex type, and has an interchangeable taking lens unit (interchangeable lens) 512 located approximately in the center of the front of a camera main body 511, and a grip part 513 for the photographer to hold on the left side of the front.

[0151] A monitor 514 is provided at a position shifted to the left from the center on the back of the camera body 511. An electronic viewfinder (eyepiece window) 515 is provided above the monitor 514. By looking through the electronic viewfinder 515, the photographer can visually confirm the optical image of the subject guided by the photographing lens unit 512 and determine the composition. The light-emitting device 10 according to an embodiment of the present disclosure can be used as the monitor 514 or the electronic viewfinder 515.

[0152] 22 is an external view of a head-mounted display 600. The head-mounted display 600 has, for example, ear hooks 612 for wearing on the user's head on both sides of a glasses-shaped display unit 611. In this head-mounted display 600, the light-emitting device 10 according to an embodiment of the present disclosure can be used as the display unit 611.

[0153] 23 is an external view of a see-through head mounted display 634. The see-through head mounted display 634 is composed of a main body 632, an arm 633, and an eyepiece tube 631.

[0154] The main body 632 is connected to the arm 633 and the glasses 630. Specifically, an end of the long side of the main body 632 is coupled to the arm 633, and one side of the main body 632 is connected to the glasses 630 via a connecting member. The main body 632 may also be worn directly on the head of the human body.

[0155] The main body 632 incorporates a control board for controlling the operation of the see-through head-mounted display 634 and a display unit. The arm 633 connects the main body 632 to the lens barrel 631 and supports the lens barrel 631. Specifically, the arm 633 is coupled to an end of the main body 632 and an end of the lens barrel 631, respectively, and fixes the lens barrel 631. The arm 633 also incorporates a signal line for communicating data related to images provided from the main body 632 to the lens barrel 631.

[0156] The lens barrel 631 projects image light provided from the main body 632 via the arm 633 through an eyepiece lens toward the eyes of a user wearing the see-through head-mounted display 634. In this see-through head-mounted display 634, the light-emitting device 10 according to an embodiment of the present disclosure can be used for the display unit of the main body 632.

[0157] 24 shows an example of the appearance of a television device 710. This television device 710 has, for example, an image display screen unit 711 including a front panel 712 and a filter glass 713, and this image display screen unit 711 is configured using the light-emitting device 10 according to an embodiment of the present disclosure.

[0158] 25 shows an example of the appearance of a smartphone 800. The smartphone 800 has a display unit 802 that displays various information, an operation unit that includes buttons and the like that accept operation inputs from a user, and the like. The display unit 802 can be the light-emitting device 10 according to this embodiment.

[0159] 26A and 26B are diagrams showing the internal configuration of a vehicle having the light-emitting device 10 according to an embodiment of the present disclosure as a display device. In detail, Fig. 26A is a diagram showing the internal state of the vehicle from the rear to the front, and Fig. 26B is a diagram showing the internal state of the vehicle from diagonally rear to diagonally front.

[0160] 26A and 26B has a center display 911, a console display 912, a head-up display 913, a digital rearview mirror 914, a steering wheel display 915, and a rear entertainment display 916. The light-emitting device 10 according to an embodiment of the present disclosure can be applied to some or all of these displays.

[0161] The center display 911 is disposed on the center console 907 in a position facing the driver's seat 901 and the passenger seat 902. While FIGS. 26A and 26B show an example of a horizontally elongated center display 911 extending from the driver's seat 901 side to the passenger seat 902 side, the screen size and location of the center display 911 are arbitrary. The center display 911 can display information detected by various sensors (not shown). As a specific example, the center display 911 can display an image captured by an image sensor, a distance image to obstacles in front of or to the side of the vehicle measured by a ToF (Time of Flight) sensor, the body temperature of a passenger detected by an infrared sensor, etc. The center display 911 can be used to display, for example, at least one of safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information.

[0162] The safety-related information includes information such as detection of drowsiness, distraction, child mischief, whether a seatbelt is fastened, and whether a passenger has been abandoned. This information is detected, for example, by a sensor (not shown) placed on the back side of the center display 1911. The operation-related information is obtained by detecting gestures related to passenger operations using a sensor. The detected gestures may include operations of various in-vehicle equipment. For example, the sensor may detect operations of the air conditioning system, navigation system, AV (Audio / Visual) system, lighting system, etc. The life log includes life logs of all passengers. For example, the life log includes a record of each passenger's behavior while in the vehicle. By acquiring and saving the life log, the condition of the passenger at the time of the accident can be confirmed. The health-related information is obtained by detecting the passenger's body temperature using a temperature sensor and inferring the passenger's health condition based on the detected body temperature. Alternatively, the passenger's face may be captured using an image sensor, and the passenger's health condition may be inferred from the facial expression in the captured image. Furthermore, the system may have an automated voice conversation with the occupant and estimate the occupant's health condition based on the occupant's responses. The authentication / identification-related information includes a keyless entry function that uses a sensor to perform facial recognition, a function that automatically adjusts seat height and position using facial recognition, etc. The entertainment-related information includes a function that uses a sensor to detect operation information of an AV device by the occupant, and a function that recognizes the occupant's face using a sensor and provides content suitable for the occupant via the AV device.

[0163] The console display 912 can be used to display, for example, life log information. The console display 912 is disposed near the shift lever 908 on the center console 907 between the driver's seat 901 and the passenger seat 902. The console display 912 can also display information detected by various sensors (not shown). The console display 912 may also display an image of the vehicle's surroundings captured by an image sensor, or an image showing the distance to obstacles around the vehicle.

[0164] The head-up display 913 is virtually displayed behind the windshield 904 in front of the driver's seat 901. The head-up display 913 can be used to display, for example, at least one of safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information. Since the head-up display 913 is often virtually disposed in front of the driver's seat 901, it is suitable for displaying information directly related to the operation of the vehicle, such as the vehicle's speed and remaining fuel (battery) level.

[0165] The digital rearview mirror 914 can not only display the view behind the vehicle but also the status of passengers in the rear seats. Therefore, by placing a sensor (not shown) on the back side of the digital rearview mirror 914, it can be used to display life log information, for example.

[0166] The steering wheel display 915 is disposed near the center of the steering wheel 906 of the vehicle. The steering wheel display 915 can be used to display at least one of, for example, safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information. In particular, because the steering wheel display 915 is located near the driver's hands, it is suitable for displaying life log information such as the driver's body temperature, and for displaying information regarding the operation of AV equipment, air conditioning equipment, etc.

[0167] The rear entertainment display 916 is attached to the back side of the driver's seat 901 and the passenger seat 902 and is intended for viewing by rear seat passengers. The rear entertainment display 916 can be used to display, for example, at least one of safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information. In particular, since the rear entertainment display 916 is located directly in front of the rear seat passengers, information related to the rear seat passengers is displayed on the rear entertainment display 916. For example, the rear entertainment display 916 may display information related to the operation of an AV device or an air conditioning system, or may display the results of measurements such as the body temperature of the rear seat passengers taken with a temperature sensor (not shown).

[0168] <<7. Supplementary Information>> Although preferred embodiments of the present disclosure have been described in detail above with reference to the accompanying drawings, the technical scope of the present disclosure is not limited to such examples. It is clear that a person skilled in the art of the present disclosure can conceive of various modified or altered examples within the scope of the technical idea described in the claims, and it is understood that these also naturally fall within the technical scope of the present disclosure.

[0169] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that will be apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0170] The present technology can also be configured as follows. (1) A light-emitting device including a plurality of light-emitting elements arranged on a substrate, wherein each of the light-emitting elements includes: a first electrode stacked on the substrate; a light-emitting layer stacked on the first electrode and emitting light; a second electrode stacked on the light-emitting layer and transmitting light from the light-emitting layer; and a pixel separation layer covering an outer edge of the first electrode and having an opening exposing a central portion of an upper surface of the first electrode, wherein an insulating film is provided so as to cover at least a portion of an inner surface of the opening in the pixel separation layer. (2) The light-emitting device according to (1), wherein the insulating film is made of a metal oxide film. (3) The light-emitting device according to (2), wherein the metal oxide film contains at least one metal element selected from the group consisting of aluminum, indium, tin, and titanium. (4) The light-emitting device according to (1), wherein the insulating film is made of an organic film. (5) The light-emitting device according to (4), wherein the organic film contains at least one compound selected from the group consisting of a carbonyl compound, an ester compound, a bromine compound, an iodine compound, and a fluorine compound. (6) The light-emitting device according to any one of (1) to (5), wherein the insulating film is provided so as to cover a part of an upper surface of the pixel separation layer. (7) The light-emitting device according to any one of (1) to (6), wherein the insulating film has a thickness of 10 nm or more. (8) The light-emitting device according to any one of (1) to (7), wherein the insulating film has a length of 20 nm or more along a stacking direction of the light-emitting element, starting from an interface between the first electrode and the pixel separation layer. (9) The light-emitting device according to (8), wherein the outer edge of the first electrode has a convex portion protruding upward, and the pixel separation layer is provided so as to cover an upper surface of the convex portion. (10) The light-emitting device according to (9), wherein the height of the side surface of the pixel separation layer on the side of the central portion of the first electrode is 30 nm or more and 70 nm or less, starting from the central portion of the top surface of the first electrode. (11) The light-emitting device according to any one of (1) to (10), wherein the pixel separation layer contains at least one material selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride.(12) The light emitting device according to any one of (1) to (11) above, wherein the first electrode contains at least one metal selected from the group consisting of chromium, gold, platinum, nickel, copper, molybdenum, titanium, tantalum, aluminum, magnesium, iron, tungsten, and silver. (13) The light emitting device according to any one of (1) to (12) above, wherein, when viewed from above the substrate, the opening has a substantially rectangular, substantially polygonal, or substantially circular shape. (14) The light emitting device according to any one of (1) to (13) above, wherein each of the light emitting elements further has a resonator structure that resonates the light emitted from the light emitting layer. (15) An electronic device equipped with a light-emitting device having a plurality of light-emitting elements arranged on a substrate, wherein each of the light-emitting elements has: a first electrode stacked on the substrate; a light-emitting layer stacked on the first electrode and emitting light; a second electrode stacked on the light-emitting layer and transmitting light from the light-emitting layer; and a pixel separation layer covering an outer edge of the first electrode and having an opening exposing a central portion of an upper surface of the first electrode, wherein an insulating film is provided so as to cover at least a portion of an inner surface of the opening of the pixel separation layer.

[0171] REFERENCE SIGNS LIST 10 Light emitting device 11 Horizontal drive circuit 12 Vertical drive circuit 20 Pixel 100, 100a, 100B, 100G, 100R Sub-pixel 102 Anode electrode 102a Convex portion 104 Light emitting layer 112 Opening 202, 206 Electrode 204 Organic layer 300 Substrate 401, 401B, 401G, 401R Reflector 402, 402B, 402G, 402R Optical adjustment layer 404, 404B, 404G, 404R Oxide film 500 Digital still camera 511 Camera body 512 Taking lens unit 513 Grip portion 514 Monitor 515 Electronic viewfinder 600 Head mounted display 611, 802 Display portion 612 Ear hook portion 630 Glasses 631 Lens barrel 632 Main body 633 Arm 634 See-through head mounted display 710 Television device 711 Video display screen 712 Front panel 713 Filter glass 800 Smartphone 901 Driver's seat 902 Passenger seat 904 Windshield 906 Steering wheel 907 Center console 908 Shift lever 911 Center display 912 Console display 913 Head-up display 914 Digital rear mirror 915 Steering wheel display 916 Rear entertainment display C1 Capacitor unit DTL ｎ Signal line ELP light emitting element PS1 ｍ Power supply line PS2 Common power supply line SCL ｍ Scanning line TR Ｗ Write transistor TR Ｄ Drive transistor

Claims

1. A light-emitting device comprising a plurality of light-emitting elements arranged on a substrate, each of the light-emitting elements comprising: a first electrode stacked on the substrate; a light-emitting layer stacked on the first electrode and emitting light; a second electrode stacked on the light-emitting layer and transmitting light from the light-emitting layer; and a pixel separation layer covering the outer edge of the first electrode and having an opening that exposes the center of the top surface of the first electrode, wherein an insulating film is provided so as to cover at least a portion of the inner surface of the opening in the pixel separation layer.

2. The light emitting device according to claim 1, wherein the insulating film is made of a metal oxide film.

3. The light emitting device according to claim 2, wherein the metal oxide film contains at least one metal element selected from the group consisting of aluminum, indium, tin, and titanium.

4. The light emitting device according to claim 1, wherein the insulating film is made of an organic film.

5. The light emitting device according to claim 4, wherein the organic film contains at least one compound selected from the group consisting of carbonyl compounds, ester compounds, bromine compounds, iodine compounds, and fluorine compounds.

6. The light-emitting device according to claim 1, wherein the insulating film is provided so as to cover a portion of an upper surface of the pixel separation layer.

7. The light emitting device according to claim 1, wherein the insulating film has a thickness of 10 nm or more.

8. The light-emitting device according to claim 1, wherein the insulating film has a length of 20 nm or more along the stacking direction of the light-emitting element, starting from the interface between the first electrode and the pixel separation layer.

9. The light-emitting device according to claim 8, wherein the outer edge of the first electrode has a convex portion that protrudes upward, and the pixel separation layer is provided so as to cover an upper surface of the convex portion.

10. The light-emitting device according to claim 9, wherein the height of the side surface of the pixel separation layer on the central side of the first electrode is 30 nm or more and 70 nm or less, starting from the central part of the top surface of the first electrode.

11. The light-emitting device according to claim 1, wherein the pixel separation layer comprises at least one material selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride.

12. The light emitting device of claim 1, wherein the first electrode comprises at least one metal selected from the group consisting of chromium, gold, platinum, nickel, copper, molybdenum, titanium, tantalum, aluminum, magnesium, iron, tungsten, and silver.

13. The light-emitting device according to claim 1, wherein the opening has a substantially rectangular, polygonal, or circular shape when viewed from above the substrate.

14. The light emitting device according to claim 1, wherein each of the light emitting elements further comprises a resonator structure that resonates the light emitted from the light emitting layer.

15. An electronic device equipped with a light-emitting device having a plurality of light-emitting elements arranged on a substrate, wherein each of the light-emitting elements has: a first electrode stacked on the substrate; a light-emitting layer stacked on the first electrode and emitting light; a second electrode stacked on the light-emitting layer and transmitting light from the light-emitting layer; and a pixel separation layer covering the outer edge of the first electrode and having an opening exposing the center of the upper surface of the first electrode, wherein an insulating film is provided so as to cover at least a portion of the inner surface of the opening in the pixel separation layer.

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