Light-emitting device and electronic apparatus

Abstract

Provided is a light-emitting device that comprises a plurality of light-emitting elements. Each of the light-emitting elements includes a first electrode that is layered on a substrate, a light-emitting layer that is layered on the first electrode, a second electrode that is layered on the light-emitting layer, and a bypass part that is provided to connect the first electrode and the second electrode and comprises a conductive film that has a prescribed resistance value.

Description

Light-emitting device and electronic device

[0001] The present disclosure relates to a light-emitting device and an electronic device.

[0002] In recent years, development of display devices (light-emitting devices) using electroluminescence (EL) elements as light-emitting elements has progressed. The display devices have, for example, a plurality of light-emitting elements each composed of a lower electrode, a light-emitting layer stacked on the lower electrode, and an upper electrode stacked on the light-emitting layer.

[0003] JP 2012-230921 A

[0004] There is a strong demand for miniaturization of the driving circuits of light-emitting elements. However, miniaturization of the transistors in the driving circuits tends to increase leakage current. When the leakage current increases, the light-emitting elements electrically connected to the transistors emit light even when they are at 0 gradation. As a result, the contrast of the display device decreases.

[0005] Therefore, the present disclosure proposes a light-emitting device and electronic device that can prevent a light-emitting element from emitting light due to leakage current from a transistor in the driving circuit, even when the driving circuit is miniaturized, and prevent a decrease in the contrast of the light-emitting device (display device).

[0006] According to the present disclosure, there is provided a light-emitting device comprising a plurality of light-emitting elements, each of which has a first electrode stacked on a substrate, a light-emitting layer stacked on the first electrode, a second electrode stacked on the light-emitting layer, and a bypass section made of a conductive film having a predetermined resistance value and arranged to connect the first electrode and the second electrode.

[0007] Furthermore, according to the present disclosure, there is provided an electronic device equipped with a light-emitting device having a plurality of light-emitting elements, each of which has a first electrode stacked on a substrate, a light-emitting layer stacked on the first electrode, a second electrode stacked on the light-emitting layer, and a bypass section made of a conductive film provided to connect the first electrode and the second electrode.

[0008] FIG. 1 is a schematic diagram showing an example of the overall configuration of a display device according to an embodiment of the present disclosure. FIG. 2 is a circuit diagram showing an example of a pixel according to a comparative example. FIG. 3 is an explanatory diagram for explaining the background of an embodiment of the present disclosure. FIG. 1 is an explanatory diagram (part 1) for explaining an outline of an embodiment of the present disclosure. FIG. 2 is an explanatory diagram (part 2) for explaining an outline of an embodiment of the present disclosure. FIG. 3 is an explanatory diagram (part 3) for explaining an outline of an embodiment of the present disclosure. FIG. 4 is a cross-sectional view of a light-emitting element according to a first embodiment of the present disclosure. FIG. 5 is a cross-sectional view of a light-emitting element according to a modified example of the first embodiment of the present disclosure. FIG. 6 is a cross-sectional view of a light-emitting element according to a modified example of the second embodiment of the present disclosure. FIG. 7 is a cross-sectional view of a light-emitting element according to a modified example of the second embodiment of the present disclosure. FIG. 8 is a cross-sectional view of a light-emitting element according to a modified example of the third embodiment of the present disclosure. FIG. 9 is a cross-sectional view of a light-emitting element according to a modified example of the third embodiment of the present disclosure. FIG. 10 is a cross-sectional view (part 1) of a light-emitting element according to a fifth embodiment of the present disclosure. FIG. 11 is a cross-sectional view (part 2) of a light-emitting element according to a fifth embodiment of the present disclosure. FIG. 12 is a cross-sectional view (part 3) of a light-emitting element according to a fifth embodiment of the present disclosure. FIG. 13 is a cross-sectional view (part 4) of a light-emitting element according to a fifth embodiment of the present disclosure. FIG. 14 is a cross-sectional view (part 1) of a light-emitting element according to a modified example of the fifth embodiment of the present disclosure. FIG. 2 is a cross-sectional view (part 2) of a light-emitting element according to a modified example of the fifth embodiment of the present disclosure. FIG. 3 is a cross-sectional view (part 3) of a light-emitting element according to a modified example of the fifth embodiment of the present disclosure. FIG. 4 is a cross-sectional view (part 4) of a light-emitting element according to a modified example of the fifth embodiment of the present disclosure. FIG. 5 is a cross-sectional view of a light-emitting element according to a sixth embodiment of the present disclosure. FIG. 6 is an explanatory view for explaining the sixth embodiment of the present disclosure. FIG. 7 is a plan view of a light-emitting element according to a seventh embodiment of the present disclosure. FIG. 7 is a cross-sectional view of a light-emitting element according to the seventh embodiment of the present disclosure. FIG. 8 is a plan view of a light-emitting element according to an eighth embodiment of the present disclosure. FIG. 1 is a cross-sectional view (part 1) of a light-emitting element according to the eighth embodiment of the present disclosure. FIG. 2 is a cross-sectional view (part 2) of a light-emitting element according to the eighth embodiment of the present disclosure. FIG. 1 is a cross-sectional view (part 1) explaining a method for manufacturing a light-emitting element according to a ninth embodiment of the present disclosure. FIG. 2 is a cross-sectional view (part 2) explaining a method for manufacturing a light-emitting element according to the ninth embodiment of the present disclosure.FIG. 1 is a conceptual diagram (part 1) for explaining the relationship between a normal LN passing through the center of the light-emitting unit, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selection unit. FIG. 2 is a conceptual diagram (part 2) for explaining the relationship between a normal LN passing through the center of the light-emitting unit, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selection unit. FIG. 3 is a conceptual diagram (part 4) for explaining the relationship between a normal LN passing through the center of the light-emitting unit, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selection unit. 10 is a conceptual diagram (part 5) for explaining the relationship between a normal LN passing through the center of the light-emitting section, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selection section. FIG. 11 is a conceptual diagram (part 6) for explaining the relationship between a normal LN passing through the center of the light-emitting section, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selection section. 10 is a conceptual diagram (part 7) for explaining the relationship between a normal LN passing through the center of the light-emitting portion, a normal LN′ passing through the center of the lens member, and a normal LN″ passing through the center of the wavelength selecting portion. FIG. 11 is a schematic cross-sectional view for explaining a first example of a resonator structure. FIG. 12 is a schematic cross-sectional view for explaining a second example of a resonator structure. FIG. 13 is a schematic cross-sectional view for explaining a third example of a resonator structure. FIG. 14 is a schematic cross-sectional view for explaining a fourth example of a resonator structure. FIG. 15 is a schematic cross-sectional view for explaining a fifth example of a resonator structure. FIG. 16 is a schematic cross-sectional view for explaining a sixth example of a resonator structure. FIG. 17 is a schematic cross-sectional view for explaining a seventh example of a resonator structure.

[0009] Preferred embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. In this specification and the drawings, components having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted. Furthermore, in this specification and the drawings, multiple components having substantially the same or similar functional configurations may be distinguished by adding different letters after the same reference numeral. However, when there is no particular need to distinguish between multiple components having substantially the same or similar functional configurations, only the same reference numerals will be used.

[0010] The drawings referred to in the following description are for explaining and facilitating understanding of one embodiment of the present disclosure, and for the sake of clarity, the shapes, dimensions, ratios, etc. shown in the drawings may differ from the actual ones. Furthermore, the design of the devices shown in the drawings can be modified as appropriate, taking into consideration the following description and known technologies.

[0011] The descriptions of specific lengths and shapes in the following description do not necessarily mean the same values ​​as mathematically defined numerical values ​​or geometrically defined shapes. In particular, the descriptions of specific lengths and shapes in the following description also include shapes that have allowable differences (errors and distortions) in light-emitting elements, light-emitting devices (display devices), their manufacturing processes, and their use and operation, as well as shapes similar to those shapes.

[0012] In the following description of circuits (electrical connections), unless otherwise specified, "electrically connected" means connecting multiple elements so that electricity (signals) is conducted between them. In addition, in the following description, "electrically connected" includes not only cases where multiple elements are directly and electrically connected, but also cases where elements are indirectly and electrically connected via other elements.

[0013] The description will be given in the following order: 1. Display device according to embodiments of the present disclosure 1.1 Display device 1.2 Pixel 2. Background leading to the creation of embodiments of the present disclosure 2.1 Background 2.2 Overview of embodiments of the present disclosure 3. First embodiment 3.1 Detailed structure 3.2 Modified example 4. Second embodiment 4.1 Detailed structure 4.2 Modified example 5. Third embodiment 5.1 Detailed structure 5.2 Modified example 6. Fourth embodiment 6.1 Detailed structure 6.2 Modified example 7. Fifth embodiment 7.1 Detailed structure 7.2 Modified example 8. Sixth embodiment 9. Seventh embodiment 10. Eighth embodiment 11. Ninth embodiment 12. Summary 13. Modified examples 13.1 Modified example 1 13.2 Modified example 2 14. Application example 15. Supplementary information

[0014] <<1. Display Device According to an Embodiment of the Present Disclosure>> <1.1 Display Device> An example of the overall configuration of a display device (an example of a light-emitting device) 10 according to an embodiment of the present disclosure that is used as a display device or a lighting device will be described with reference to Fig. 1. Fig. 1 is a schematic diagram showing an example of the overall configuration of the display device 10 according to an embodiment of the present disclosure.

[0015] The display device 10 is a device in which a plurality of light-emitting elements, such as OLEDs (organic light-emitting diodes) or micro-OLEDs, are formed in an array. Such a display device 10 can be applied to, for example, display devices for VR (virtual reality), MR (mixed reality), or AR (augmented reality), electronic viewfinders (EVF), small projectors, etc. The display device 10 can also be applied to various lighting devices. Note that the display device 10 may be a device that uses light-emitting elements made of inorganic materials instead of light-emitting elements using organic materials such as OLEDs.

[0016] Furthermore, in the embodiments of the present disclosure, the light-emitting elements may be self-luminous elements and current-driven electro-optical elements. For example, examples of current-driven electro-optical elements include inorganic EL elements, LED elements, and semiconductor laser elements, in addition to OLEDs. Furthermore, an organic EL display device using OLEDs as the light-emitting elements has the following advantages. Specifically, because OLEDs are self-luminous elements, organic EL display devices have higher image visibility than liquid crystal display devices, which are also flat display devices. Furthermore, because they do not require lighting components such as backlights, they can be easily made lighter and thinner. Furthermore, because the response speed of OLEDs is extremely fast, on the order of several microseconds, organic EL display devices do not produce afterimages when displaying moving images.

[0017] 1 , the display device 10 has a pixel array section 30 configured by arranging a plurality of pixels 20, each including a light-emitting element, in a two-dimensional matrix (row and column configuration), and a drive circuit section arranged around the pixel array section 30. The drive circuit section includes, for example, a write scan section 40, a first drive scan section 50, a second drive scan section 60, and a signal output section 70 mounted on the same display panel 80 as the pixel array section 30, and drives each pixel 20 of the pixel array section 30.

[0018] Here, when the display device 10 is capable of color display, one pixel (unit pixel / pixel), which is a unit for forming a color image, is composed of multiple sub-pixels. In this case, each sub-pixel corresponds to the pixel 20 in FIG. 1 . More specifically, in the color display device 10, one pixel 20 may be composed of three sub-pixels, for example, a sub-pixel emitting red light, a sub-pixel emitting green light, and a sub-pixel emitting blue light. Alternatively, one pixel 20 may be composed of one, two, or more sub-pixels. Furthermore, one pixel 20 is not limited to a combination of sub-pixels of the three primary colors, red, green, and blue, but may also be composed of sub-pixels of one or more colors in addition to the three primary color sub-pixels. More specifically, the display device 10 may be configured to include a sub-pixel emitting white light to improve brightness, or at least one sub-pixel emitting complementary color light to expand the color reproduction range. Furthermore, in this embodiment, one pixel 20 is not limited to being composed of multiple sub-pixels that emit different light, as described above, but may be composed of multiple sub-pixels that emit light of the same color, or may be composed of one sub-pixel.

[0019] In the pixel array section 30, scanning lines 31 (31) are arranged along the row direction (arrangement direction of the pixels 20 in the pixel row / horizontal direction) for the arrangement of the pixels 20 in m rows and n columns. １ ~31 ｍ ), and the first drive line 32 (32 １ ~32 ｍ ) are wired for each pixel row. In addition, for an arrangement of the pixels 20 in m rows and n columns, a second driving line 33 (33 １ ~33 ｍ ) are wired for each pixel row. Furthermore, for the arrangement of the pixels 20 in m rows and n columns, signal lines 34 (34) are wired along the column direction (arrangement direction / vertical direction of the pixels 20 in the pixel column). １ ~34 ｎ ) is wired for each pixel column.

[0020] Scanning line 31 １ ~31 ｍare electrically connected to the output terminals of the corresponding rows of the write scanning section 40. １ ~32 ｍ The second driving lines 33 are electrically connected to the output terminals of the corresponding rows of the first driving scanning section 50. １ ~33 ｍ are connected to the output terminals of the corresponding rows of the second driving scanning section 60. １ ~34 ｎ are electrically connected to the output terminals of the corresponding columns of the signal output section 70 .

[0021] The write scanning section 40 is configured by a shift register circuit and the like. When writing a signal voltage of a video signal to each pixel 20 of the pixel array section 30, the write scanning section 40 scans the scan lines 31 (31 １ ~31 ｍ ) to the write scanning signal WS (WS １ ~WS ｍ ) are sequentially supplied, the pixels 20 of the pixel array section 30 can be scanned in order row by row.

[0022] The first drive scanning section 50 is configured by a shift register circuit and the like, similar to the write scanning section 40. The drive scanning section 50 synchronizes with the line-sequential scanning by the write scanning section 40 to scan the first drive lines 32 (32 １ ~32 ｍ ) to the light emission control signal DS (DS １ ~DS ｍ ) can control whether the pixels 20 emit light or not (extinguish). Note that in the embodiment of the present disclosure, the display device 10 does not necessarily have to be provided with a drive scanning unit 50 that can control whether the pixels 20 emit light or not (extinguish).

[0023] The second drive scanning section 60 is configured with a shift register circuit and the like, similar to the write scanning section 40. The second drive scanning section 60 synchronizes with the line-sequential scanning by the write scanning section 40, and scans the second drive lines 33 (33 １ ~33 ｍ ) with respect to the drive signal AZ (AZ １ ~AZ ｍ) can be supplied to the pixel 20 so as not to emit light during the non-light-emitting period. In this way, the display device 10 can suppress a decrease in contrast during black gradation display.

[0024] The signal output unit 70 selectively outputs a signal voltage Vsig (hereinafter simply referred to as "signal voltage") of a video signal corresponding to luminance information supplied from a signal supply source (not shown) or a reference voltage Vofs. Here, the reference voltage Vofs is a voltage equivalent to a reference voltage for the signal voltage Vsig of the video signal, or a voltage close to this.

[0025] The signal voltage Vsig / reference voltage Vofs alternatively output from the signal output unit 70 is connected to the signal line 34 (34 １ ~34 ｎ ) to each pixel 20 of the pixel array unit 30 in units of pixel rows selected by line-sequential scanning by the write scanning unit 40. That is, the signal output unit 70 can write the signal voltage Vsig in units of pixel rows (lines).

[0026] Note that the configuration example shown in FIG. 1 is an example of the configuration of the display device 10 according to an embodiment of the present disclosure, and the display device 10 according to an embodiment of the present disclosure is not limited to the configuration shown in FIG. 1.

[0027] <1.2 Pixel> Next, an example of a circuit configuration of a pixel 20a according to a comparative example, which corresponds to the pixel (pixel circuit) 20 of the display device 10 according to the embodiment of the present disclosure shown in Fig. 1, will be described with reference to Fig. 2. Fig. 2 is a circuit diagram showing an example of the pixel 20a according to the comparative example. Here, the comparative example refers to the pixel 20a that the inventors of the present invention had studied extensively before developing the embodiment of the present disclosure.

[0028] 2, the pixel 20a is composed of a light-emitting element EL and a drive circuit for driving the element. The light-emitting element EL is an example of a current-driven electro-optical element whose light emission luminance changes depending on the value of the current flowing through the device, and is composed of, for example, an OLED. The cathode of the light-emitting element EL is electrically connected to, for example, a node Vss for outputting a current.

[0029] The drive circuit is composed of a drive transistor Tr1, a write transistor Tr2, a light-emission control transistor Tr3, a switching transistor Tr4, and capacitors C1 and C2. The anode of the light-emitting element EL is electrically connected to the drive transistor Tr1, and when a current flows through the drive transistor Tr1, the light-emitting element EL emits light. The drive transistor Tr1, the write transistor Tr2, the light-emission control transistor Tr3, and the switching transistor Tr4 are, for example, field-effect transistors (FETs). The drive transistor Tr1 and the light-emission control transistor Tr3 are P-channel transistors, and the write transistor Tr2 and the switching transistor Tr4 are N-channel transistors.

[0030] Specifically, as shown in FIG. 2, the write transistor Tr2 can write to the gate node (gate electrode) of the drive transistor Tr1 by sampling the signal voltage Vsig supplied from the signal output unit 70. Note that the expression "write" here means that a signal voltage is applied to the gate node, and the potential of the gate node is maintained at a potential based on the signal voltage. Also, the light emission control transistor Tr3 is configured to write to the gate node (gate electrode) of the drive transistor Tr1 by sampling the signal voltage Vsig supplied from the signal output unit 70. ＤＤ and the source node (source electrode) of the driving transistor Tr1, and controls whether the light emitting element EL emits light or not when driven by the light emitting control signal DS.

[0031] The source and drain of the driving transistor Tr1 are electrically connected to the drain of the light-emitting control transistor Tr3 and the anode electrode of the light-emitting element EL, respectively. The driving transistor Tr1 can drive the light-emitting element EL by passing a driving current to the light-emitting element EL according to a voltage held by a capacitance section C1 (described later).

[0032] The switching transistor Tr4 is connected to the drain node (drain electrode) of the driving transistor Tr1 and the current discharge node V ＳＳand the switching transistor Tr4, which is connected between the driving transistor Tr1 and the driving signal AZ, controls the light-emitting element EL so that it does not emit light during its non-light-emitting period. That is, the switching transistor Tr4 serves to prevent current from being supplied to the light-emitting element EL by being turned on. In this way, even if current leaks between the source and drain of the driving transistor Tr1 when the driving transistor Tr1 is switched off, the switching transistor Tr4 is turned on, preventing current from being supplied to the light-emitting element EL, and reducing the decrease in contrast during black gradation display.

[0033] The capacitance unit C1 is connected between the gate node and the source node of the drive transistor Tr1, and holds the signal voltage Vsig written by sampling by the write transistor Tr2. The drive transistor Tr1 drives the light-emitting element EL by supplying a drive current to the light-emitting element EL that corresponds to the voltage held by the capacitance unit C1.

[0034] The capacitance section C2 is connected between the source node of the driving transistor Tr1 and a node of a fixed potential (for example, a power supply voltage V ＤＤ The capacitance section C2 is connected between the driving transistor Tr1 and the gate-source voltage Vgs of the driving transistor Tr1 (power supply node of the driving transistor Tr1). The capacitance section C2 suppresses fluctuations in the source voltage of the driving transistor Tr1 when the signal voltage Vsig is written, and also has the effect of setting the gate-source voltage Vgs of the driving transistor Tr1 to the threshold voltage Vth of the driving transistor Tr1.

[0035] Note that the circuit configuration example shown in FIG. 2 is an example of the circuit configuration of the pixel 20a according to the comparative example, and the circuit configuration of the pixel 20a according to the comparative example is not limited to the circuit configuration shown in FIG. 2.

[0036] <<2. Background leading to the creation of the embodiments of the present disclosure>> <2.1 Background> Next, before describing the embodiments of the present disclosure, the background leading to the creation of the embodiments of the present disclosure by the inventors will be described with reference to Figures 2 and 3. Figure 3 is an explanatory diagram for explaining the background of the embodiments of the present disclosure.

[0037] There is a strong demand for miniaturization of the drive circuit of the pixel 20a according to the comparative example shown in FIG. 2 . However, for example, when the drive transistor Tr1 is miniaturized and the channel length is shortened, the current flowing through the drive transistor Tr1 when the corresponding pixel 20a is at 0 gradation (when displaying black gradation), i.e., the leakage current, tends to increase. If the leakage current increases, the leakage current of the drive transistor Tr1 causes the light-emitting element EL of the corresponding pixel 20a to emit light even when the corresponding pixel 20a is at 0 gradation (when displaying black gradation). As a result, the light-emitting element EL, which is supposed to be controlled not to emit light, emits light, and the display device 10 is unable to display an image with the desired contrast; in other words, the contrast of the display device 10 is reduced.

[0038] In particular, when a phosphorescent material is used instead of a fluorescent material as the light-emitting layer of the light-emitting element EL, as shown in Figure 3, the light-emitting element EL becomes more likely to emit light even at a low current density (for example, the current density shown by the dashed line), resulting in a further decrease in contrast.

[0039] In view of this situation, the present inventors have conducted extensive research and have concluded that even when the driving transistor Tr1 is miniaturized, a configuration is needed to prevent the light emitting element EL from emitting light due to a leakage current from the driving transistor Tr1, thereby reducing the contrast of the display device 10. Through their research, the present inventors have come up with the embodiments of the present disclosure described below.

[0040] 2.2 Overview of Embodiments of the Present Disclosure First, an overview of the embodiments of the present disclosure created by the present inventors will be described with reference to Figures 4 to 6. Figures 4 to 6 are explanatory diagrams for explaining the overview of the embodiments of the present disclosure.

[0041] As shown in FIG. 4 , the inventors have created an embodiment of the present disclosure in which a bypass portion BP is provided to connect the cathode and anode of the light-emitting element EL. The bypass portion BP has a predetermined resistance value and can divert the leakage current of the drive transistor Tr1 away from the light-emitting element EL (more specifically, the light-emitting layer) when the corresponding pixel 20 is at 0 gradation (black gradation display). Therefore, according to the embodiment of the present disclosure, even if the drive transistor Tr1 is miniaturized, when the corresponding pixel 20 is at 0 gradation (black gradation display), the leakage current generated in the drive transistor Tr1 does not flow into the light-emitting layer, thereby preventing the light-emitting element EL from emitting light. As a result, according to the embodiment of the present disclosure, even if the drive transistor Tr1 is miniaturized, a decrease in the contrast of the display device 10 can be prevented.

[0042] In an embodiment of the present disclosure, the relationship between the voltage between the cathode and anode sides of the light-emitting element EL, the current flowing in the light-emitting element EL, and the current flowing in the bypass section BP is as shown in Fig. 5. In detail, in an embodiment of the present disclosure, the resistance value of the bypass section BP is adjusted so that the current flowing in the bypass section BP is dominant at voltages equal to or lower than 0 gradation (voltage indicated by the dashed line), and the current flowing in the light-emitting element EL is dominant at voltages higher than 0 gradation (voltage indicated by the dashed line).

[0043] Furthermore, a method for determining the resistance value of the bypass section BP will be described with reference to FIG.

[0044] First, the resistance R due to the leakage current of the driving transistor Tr1 ｌｅａｋ Next, as shown in FIG. 6, the luminance L that is allowed when the light-emitting element EL is at 0 gradation is calculated. ０ When the voltage V applied to the light-emitting element EL is ｏ The luminance L shown in FIG. ０ Higher brightness than L １ is the luminance that is not allowed at 0 gradation, and the voltage applied to the light-emitting element EL at this time is the voltage V １ is.

[0045] When the light emitting element EL is at 0 gradation, the voltage applied to the driving transistor Tr1 is Vｃｃｐ In this case, the current flowing from the driving transistor Tr1 to the bypass part BP is a voltage V ｏ Since the current flowing through the bypass section BP to which the resistance R is applied is the same, the resistance value of the bypass section BP and the resistance R ｂ In this case, the relationship shown in the following formula (1) is established.

[0046] Therefore, the resistance R of the bypass section BP ｂ is set to satisfy the following formula (2), the current flowing through the bypass section BP can be made dominant at a voltage of 0 gradation or less.

[0047] As described above, according to the embodiment of the present disclosure, by providing the bypass section BP having a predetermined resistance value so as to connect between the cathode and anode of the light-emitting element EL, even when the driving transistor Tr1 is miniaturized, it is possible to prevent the light-emitting element EL from emitting light due to a leakage current from the driving transistor Tr1, thereby preventing a decrease in the contrast of the display device 10. Hereinafter, details of the embodiment of the present disclosure created by the present inventors will be sequentially described.

[0048] <<3. First Embodiment>> <3.1 Detailed Structure> First, a detailed structure of the light-emitting element 100 according to the first embodiment of the present disclosure will be described with reference to Fig. 7. Fig. 7 is a cross-sectional view of the light-emitting element 100 according to the first embodiment of the present disclosure, and more specifically, corresponds to a cross section of the light-emitting element 100 cut along the stacking direction of the stacked structure of the light-emitting element 100. Note that the pixel 20 including the light-emitting element 100 having the configuration shown in Fig. 7 has the circuit configuration shown in Fig. 4 described above.

[0049] As shown in FIG. 7 , the light-emitting element 100 according to this embodiment is provided on a semiconductor substrate 102 made of, for example, silicon. The light-emitting element 100 has a first electrode 110 stacked on the semiconductor substrate 102, a light-emitting layer 112 stacked on the first electrode 110, and a second electrode 114 stacked on the light-emitting layer 112. Furthermore, in this embodiment, as described above, the light-emitting element 100 has a bypass section 120 having a predetermined resistance value that is provided to connect the first electrode 110 and the second electrode 114 of the light-emitting element 100. Also, in this embodiment, protective films 130, 132, and 134 and wiring 140 are provided on the second electrode 114. Each of these components will be described in detail below.

[0050] (First Electrode 110) The first electrode 110 can be formed of a light-reflecting material such as aluminum (Al), an aluminum alloy, silver (Ag), or a silver alloy. The film thickness of the first electrode 110 is preferably, for example, 100 to 300 nm. The first electrode 110 may also be a multilayer film, for example, having a configuration in which a transparent conductive layer and a light-reflecting layer are stacked. More specifically, the first electrode 110 may have a configuration in which an aluminum alloy layer is stacked as a first layer (light-reflecting layer) and a transparent conductive layer such as indium tin oxide (ITO) or indium zinc oxide (IZO) is stacked as a second layer (transparent conductive layer). Furthermore, an inorganic material layer made of titanium (Ti), titanium nitride (TiN), or the like may be provided below the first electrode 110 as a base layer.

[0051] (Light-Emitting Layer 112) In this embodiment, as shown in FIG. 7 , the light-emitting layer 112 is provided on the first electrode 110 and has a smaller area than the first electrode 110. In addition, in this embodiment, the light-emitting layer 112 may have a white-type structure in which, for example, three light-emitting layers of red, green, and blue are stacked, that is, white light is extracted. Alternatively, in this embodiment, the light-emitting layer 112 may be any one of the three light-emitting layers of red, green, and blue. Furthermore, in this embodiment, the light-emitting layer 112 may be formed from an organic material or an inorganic material.

[0052] More specifically, the light-emitting layer 112 may have a structure in which, for example, a hole injection layer, a hole transport layer, a light-emitting layer, a light-emitting separation layer, and an electron transport layer are stacked.

[0053] The hole injection layer can be made of, for example, hexaazatriphenylene (HAT).

[0054] The hole transport layer can be composed of, for example, α-NPD [N,N'-di(1-naphthalyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine].

[0055] In the red light-emitting layer, when an electric field is applied, a portion of holes injected from the first electrode 110 via the hole injection layer and the hole transport layer and a portion of electrons injected from the second electrode 114 via the electron transport layer recombine to generate red light. The red light-emitting layer contains, for example, at least one of a red light-emitting material, a hole transport material, an electron transport material, and a positive and negative charge transport material. The red light-emitting material may be a fluorescent material or a phosphorescent material. Specifically, the red light-emitting layer may be composed of, for example, a mixture of 4,4-bis(2,2-diphenylvinyl)biphenyl (DPVBi) and 30 wt % of 2,6-bis[(4'-methoxydiphenylamino)styryl]-1,5-dicyanonaphthalene (BSN).

[0056] When an electric field is applied, some of the holes injected from the first electrode 110 via the hole injection layer, hole transport layer, and emission separation layer recombine with some of the electrons injected from the second electrode 114 via the electron transport layer, generating blue light. The blue light-emitting layer contains, for example, at least one of a blue light-emitting material, a hole transport material, an electron transport material, and a bipolar charge transport material. The blue light-emitting material may be a fluorescent material or a phosphorescent material. Specifically, the blue light-emitting layer may be composed of, for example, DPVBi mixed with 2.5 wt % of 4,4'-bis[2-{4-(N,N-diphenylamino)phenyl}vinyl]biphenyl (DPAVBi).

[0057] When an electric field is applied, some of the holes injected from the first electrode 110 via the hole injection layer, hole transport layer, and emission separation layer recombine with some of the electrons injected from the second electrode 114 via the electron transport layer, generating green light. The green light-emitting layer contains, for example, at least one of a green light-emitting material, a hole transport material, an electron transport material, and a bipolar charge transport material. The green light-emitting material may be a fluorescent material or a phosphorescent material. Specifically, the green light-emitting layer may be composed of, for example, DPVBi mixed with 5 wt % coumarin 6.

[0058] The emission separation layer is a layer for adjusting the injection of carriers into the emission layers, and the balance of light emission of each color is adjusted by injecting electrons and holes into each emission layer through the emission separation layer. The emission separation layer can be composed of, for example, a 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl derivative.

[0059] The electron transport layer may be made of, for example, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Alq3 (aluminum quinolinol), Bphen (bathophenanthroline), etc. The electron transport layer is made up of at least one layer, and may include an electron transport layer doped with an alkali metal or alkaline earth metal.

[0060] The electron transport layer doped with an alkali metal or alkaline earth metal can be configured by doping, for example, 0.5 to 15 wt % of a host material such as BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Alq3 (aluminum quinolinol), or Bphen (bathophenanthroline) with, for example, 0.5 to 15 wt % of an alkali metal such as lithium (Li), sodium (Na), potassium (K), rubidium (Rb), or cesium (Cs) or an alkaline earth metal such as magnesium (Mg), calcium (Ca), strontium (Sr), or barium (Ba) as a dopant material by co-evaporation.

[0061] An electron injection layer may be provided between the electron transport layer and the second electrode 114. The electron injection layer is intended to enhance electron injection from the cathode and may be composed of an alkali metal or alkaline earth metal, a compound containing the alkali metal or alkaline earth metal, or a mixture containing the alkali metal or alkaline earth metal. For example, the electron injection layer may be composed of lithium (Li), lithium fluoride (LiF), or the like.

[0062] A buffer layer may be provided between the electron transport layer and the second electrode 114. The buffer layer is intended to mitigate process damage during the formation of the second electrode 114. The buffer layer may be made of, for example, Mg, magnesium silver alloy (MgAg), Ca, Li, LiF, or lithium carbonate (Li ２ CO ３ ), Cs, cesium carbonate (Cs ２ CO ３ The alkali metal or alkaline earth metal may be a simple substance, a compound containing the alkali metal or alkaline earth metal, or a mixture containing the alkali metal or alkaline earth metal.

[0063] The thickness of each layer constituting the light-emitting layer 112 is preferably, for example, 1 to 20 nm for the hole injection layer, 10 to 200 nm for the hole transport layer, 5 to 50 nm for the light-emitting layer, and 10 to 200 nm for the electron transport layer.

[0064] (Second Electrode 114) The second electrode 114 can be made of a transparent conductive material with good light transmittance and a low work function. For example, the second electrode 114 can be made of indium zinc oxide (IZO), and its film thickness is preferably 10 to 500 nm. In this embodiment, as shown in FIG. 7, the second electrode 114 is provided above the first electrode 110 and has a smaller area than the first electrode. Furthermore, the second electrode 114 is provided on the light-emitting layer 112 and has the same area as the light-emitting layer 112. That is, in this embodiment, the side surfaces of the light-emitting layer 112 and the second electrode 114 are flush with each other.

[0065] (Bypass Section 120) The bypass section 120 is made of a conductive film having a predetermined resistance value and is provided to connect the first electrode 110 and the second electrode 114. For example, the conductive film is made of a metal film, a transparent oxide, or an organic material. More specifically, the conductive film is made of a material containing at least one of carbon (C), aluminum (Al), gold (Au), indium (In), silver (Ag), titanium (Ti), magnesium (Mg), and copper (Cu). Furthermore, in this embodiment, as shown in FIG. 7 , the bypass section 120 is provided to cover the side surfaces of the second electrode 114 and the light-emitting layer 112, which are flush with each other, and is in contact with the top surface of the first electrode 110. Therefore, in this embodiment, the bypass section 120 allows the leakage current of the drive transistor Tr1 to be diverted away from the light-emitting layer 112 of the light-emitting element 100 when the light-emitting element 100 is displaying 0 gradation (black gradation). As a result, since leakage current does not flow into the light-emitting layer 112, the light-emitting element 100 can be prevented from emitting light, and ultimately, even if the driving transistor Tr1 is miniaturized, a decrease in the contrast of the display device 10 can be prevented.

[0066] (Protective Films 130, 132, 134) A protective film 130 is provided on the second electrode 114, and the protective film 130 has an opening 150 that exposes the center of the second electrode 114. Furthermore, a protective film 132 is provided so as to cover the upper and side surfaces of the protective film 130. The protective film 132 also has an opening that exposes the center of the second electrode 114 and communicates with the opening 150. Furthermore, wiring 140, which will be described later, is provided so as to cover at least a part of the inner wall of the opening 150, at least a part of the upper surface of the protective film 132, and at least a part of the side surface of the protective film 132. Furthermore, the wiring 140 is in contact with the second electrode 114 that is exposed from the opening 150. Furthermore, the protective film 134 is embedded in the lower part of the opening 150, and is provided on the protective film 132 and the wiring 140. Furthermore, the protective films 130, 132, 134 may be made of silicon oxide (SiO ２ ), aluminum oxide (Al ２ O ３ ), titanium oxide (TiO ２The insulating layer 10 can be formed from an oxide film such as silicon nitride (SiN), a nitride film such as silicon oxynitride (SiON), or a resin material such as an acrylic resin or an epoxy resin.

[0067] (Wiring 140) The wiring 140 electrically connects the second electrodes 114 of adjacent light-emitting elements 100. The wiring 140 can be formed from a transparent conductive film such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0068] As described above, in this embodiment, the bypass section 120 provided to connect the first electrode 110 and the second electrode 114 can divert the leakage current of the drive transistor Tr1 from the light-emitting layer 112 of the light-emitting element 100 when the corresponding light-emitting element 100 is at 0 gradation (when displaying black gradation). Therefore, according to this embodiment, even if the drive transistor Tr1 is miniaturized, the leakage current generated in the drive transistor Tr1 does not flow into the light-emitting layer 112 when the corresponding pixel 20 is at 0 gradation (when displaying black gradation), thereby preventing the light-emitting element 100 from emitting light. As a result, according to this embodiment, even if the drive transistor Tr1 is miniaturized, it is possible to prevent a decrease in the contrast of the display device 10.

[0069] <3.2 Modification> Next, a detailed structure of a light-emitting element 100 according to a modification of this embodiment will be described with reference to Fig. 8. Fig. 8 is a cross-sectional view of the light-emitting element 100 according to a modification of the first embodiment of the present disclosure, and more specifically, corresponds to a cross section of the light-emitting element 100 cut along the stacking direction of the stacked structure of the light-emitting element 100. Note that a pixel 20 including the light-emitting element 100 having the configuration shown in Fig. 8 has the circuit configuration shown in Fig. 4 described above.

[0070] 8, this modification differs from the first embodiment in that the second electrode 114 has the same area as the light-emitting layer 112 and the first electrode 110. That is, in this modification, the side surfaces of the first electrode 110, the side surfaces of the light-emitting layer 112, and the side surfaces of the second electrode 114 are flush with each other. Furthermore, in this modification, as shown in FIG. 8, the bypass section 120 is provided so as to cover the side surfaces of the second electrode 114, the light-emitting layer 112, and the first electrode 110, which are flush with each other.

[0071] As described above, in this modification as well, when the corresponding light-emitting element 100 is at gradation 0, the leakage current of the drive transistor Tr1 can be diverted from the light-emitting layer 112 of the light-emitting element 100 by the bypass section 120 provided to connect the first electrode 110 and the second electrode 114. Therefore, according to this modification, even if the drive transistor Tr1 is miniaturized, when the corresponding pixel 20 is at gradation 0, the leakage current generated in the drive transistor Tr1 does not flow into the light-emitting layer 112, and therefore, the light-emitting element 100 can be prevented from emitting light.

[0072] In this embodiment and this modified example, the light emitting device 100 is not limited to the configuration shown in FIGS. 7 and 8, but can be modified into various other configurations.

[0073] <<4. Second Embodiment>> <4.1 Detailed Structure> Next, a detailed structure of a light-emitting element 100 according to a second embodiment of the present disclosure will be described with reference to Fig. 9. Fig. 9 is a cross-sectional view of the light-emitting element 100 according to the second embodiment of the present disclosure, and more specifically, corresponds to a cross section of the light-emitting element 100 cut along the stacking direction of the stacked structure of the light-emitting element 100. Note that a pixel 20 including the light-emitting element 100 having the configuration shown in Fig. 9 has the circuit configuration shown in Fig. 4 described above.

[0074] 9 , the present embodiment differs from the first embodiment described above in that the bypass portion 120 extends from the side surface of the second electrode 114 to the side surface of the protective film 130. That is, in the present embodiment, the bypass portion 120 is provided so as to cover the side surfaces of the protective film 130, the side surfaces of the second electrode 114, and the side surfaces of the light-emitting layer 112, and is in contact with the upper surface of the first electrode 110. In the present embodiment, by extending the bypass portion 120 to the side surface of the protective film 130, highly accurate mask patterning and etching can be eliminated when fabricating the bypass portion 120, and therefore increases in manufacturing time and manufacturing costs associated with providing the bypass portion 120 can be suppressed.

[0075] As described above, also in this embodiment, the bypass section 120 provided to connect the first electrode 110 and the second electrode 114 can divert the leakage current of the drive transistor Tr1 from the light-emitting layer 112 of the light-emitting element 100 when the corresponding light-emitting element 100 is at 0 gradation (when displaying black gradation). Therefore, according to this embodiment, even if the drive transistor Tr1 is miniaturized, when the corresponding pixel 20 is at 0 gradation, the leakage current generated in the drive transistor Tr1 does not flow into the light-emitting layer 112, and therefore the light-emitting element 100 can be prevented from emitting light.

[0076] <4.2 Modifications> Next, a detailed structure of a light-emitting element 100 according to a modification of the present embodiment will be described with reference to Fig. 10. Fig. 10 is a cross-sectional view of the light-emitting element 100 according to a modification of the second embodiment of the present disclosure, and more specifically, corresponds to a cross section of the light-emitting element 100 cut along the stacking direction of the stacked structure of the light-emitting element 100. Note that a pixel 20 including the light-emitting element 100 having the configuration shown in Fig. 10 has the circuit configuration shown in Fig. 4 described above.

[0077] 10 , this modification differs from the second embodiment in that the second electrode 114 has the same area as the light-emitting layer 112 and the first electrode 110. That is, in this modification, the side surfaces of the first electrode 110, the side surfaces of the light-emitting layer 112, and the side surfaces of the second electrode 114 are flush with each other. Furthermore, in this modification, as shown in FIG. 10 , the bypass portion 120 is provided so as to cover the side surfaces of the protective film 130, the second electrode 114, the light-emitting layer 112, and the first electrode 110. In this modification, too, by extending the bypass portion 120 to the side surfaces of the protective film 130, it is possible to eliminate the need for highly accurate mask patterning and etching when fabricating the bypass portion 120, thereby suppressing increases in manufacturing time and manufacturing costs associated with providing the bypass portion 120.

[0078] As described above, in this modification as well, when the corresponding light-emitting element 100 is at 0 gradation, the bypass section 120 provided to connect the first electrode 110 and the second electrode 114 allows the leakage current of the drive transistor Tr1 to be diverted away from the light-emitting layer 112 of the light-emitting element 100. Therefore, according to this modification, even if the drive transistor Tr1 is miniaturized, when the corresponding pixel 20 is at 0 gradation, the leakage current generated in the drive transistor Tr1 does not flow into the light-emitting layer 112, and therefore the light-emitting element 100 can be prevented from emitting light.

[0079] In this embodiment and this modified example, the light emitting device 100 is not limited to the configuration shown in FIGS. 9 and 10, but can be modified into various other configurations.

[0080] <<5. Third Embodiment>> <5.1 Detailed Structure> Next, a detailed structure of a light-emitting element 100 according to a third embodiment of the present disclosure will be described with reference to Fig. 11. Fig. 11 is a cross-sectional view of the light-emitting element 100 according to the third embodiment of the present disclosure, and more specifically, corresponds to a cross section of the light-emitting element 100 cut along the stacking direction of the stacked structure of the light-emitting element 100. Note that a pixel 20 including the light-emitting element 100 having the configuration shown in Fig. 11 has the circuit configuration shown in Fig. 4 described above.

[0081] This embodiment differs from the second embodiment described above in that, as shown in FIG. 11 , the bypass portion 120 extends to the upper surface of the protective film 130. That is, in this embodiment, the bypass portion 120 is provided so as to cover the upper surface of the protective film 130 and the side surfaces of the protective film 130, the second electrode 114, and the light-emitting layer 112, and is in contact with the upper surface of the first electrode 110. In this embodiment, by extending the bypass portion 120 to the upper surface of the protective film 130, high-precision mask patterning and etching are not required when fabricating the bypass portion 120, and therefore, increases in manufacturing time and manufacturing costs associated with providing the bypass portion 120 can be suppressed. Note that, in this embodiment, the bypass portion 120 is not limited to covering the entire upper surface of the protective film 130, and it is sufficient that the bypass portion 120 covers only a portion of the upper surface.

[0082] As described above, also in this embodiment, when the corresponding light-emitting element 100 is at 0 gradation, the leakage current of the driving transistor Tr1 can be diverted from the light-emitting layer 112 of the light-emitting element 100 by the bypass section 120 provided to connect the first electrode 110 and the second electrode 114. Therefore, according to this embodiment, even if the driving transistor Tr1 is miniaturized, when the corresponding pixel 20 is at 0 gradation, the leakage current generated in the driving transistor Tr1 does not flow into the light-emitting layer 112, and therefore, the light-emitting element 100 can be prevented from emitting light.

[0083] 5.2 Modifications Next, a detailed structure of a light-emitting element 100 according to a modification of the present embodiment will be described with reference to Fig. 12. Fig. 12 is a cross-sectional view of the light-emitting element 100 according to a modification of the third embodiment of the present disclosure, and more specifically, corresponds to a cross section of the light-emitting element 100 cut along the stacking direction of the stacked structure of the light-emitting element 100. Note that a pixel 20 including the light-emitting element 100 having the configuration shown in Fig. 12 has the circuit configuration shown in Fig. 4 described above.

[0084] This modification differs from the third embodiment in that, as shown in FIG. 12 , the second electrode 114 has the same area as the light-emitting layer 112 and the first electrode 110. That is, in this modification, the side surfaces of the first electrode 110, the light-emitting layer 112, and the second electrode 114 are flush with each other. Furthermore, in this modification, as shown in FIG. 12 , the bypass portion 120 is provided so as to cover the upper surface of the protective film 130 and the side surfaces of the protective film 130, the second electrode 114, the light-emitting layer 112, and the first electrode 110. In this modification, too, by extending the bypass portion 120 to the upper surface of the protective film 130, high-precision mask patterning and etching are not required when fabricating the bypass portion 120, and therefore increases in manufacturing time and manufacturing costs associated with providing the bypass portion 120 can be suppressed.

[0085] As described above, in this modification as well, when the corresponding light-emitting element 100 is at 0 gradation, the bypass section 120 provided to connect the first electrode 110 and the second electrode 114 allows the leakage current of the drive transistor Tr1 to be diverted away from the light-emitting layer 112 of the light-emitting element 100. Therefore, according to this modification, even if the drive transistor Tr1 is miniaturized, when the corresponding pixel 20 is at 0 gradation, the leakage current generated in the drive transistor Tr1 does not flow into the light-emitting layer 112, and therefore the light-emitting element 100 can be prevented from emitting light.

[0086] In this embodiment and this modified example, the light emitting device 100 is not limited to the configuration shown in FIGS. 11 and 12, but can be modified into various other configurations.

[0087] <<6. Fourth Embodiment>> <6.1 Detailed Structure> Next, a detailed structure of a light-emitting element 100 according to a fourth embodiment of the present disclosure will be described with reference to Fig. 13. Fig. 13 is a cross-sectional view of the light-emitting element 100 according to the fourth embodiment of the present disclosure, and more specifically, corresponds to a cross section of the light-emitting element 100 cut along the stacking direction of the stacked structure of the light-emitting element 100. Note that a pixel 20 including the light-emitting element 100 having the configuration shown in Fig. 13 has the circuit configuration shown in Fig. 4 described above.

[0088] 13 , the present embodiment differs from the second embodiment in that the bypass portion 120 extends from the side surface of the second electrode 114 to a position on the side surface of the protective film 130 along the film thickness direction of the protective film 130, between the upper surface and the lower surface of the protective film 130. That is, in the present embodiment, the bypass portion 120 is provided so as to cover at least a portion of the side surface of the protective film 130 and the side surfaces of the second electrode 114 and the light-emitting layer 112, and is in contact with the upper surface of the first electrode 110. In the present embodiment, by extending the bypass portion 120 from the side surface of the second electrode 114 to a position between the upper surface and the lower surface of the protective film 130, it is possible to eliminate the need for highly accurate mask patterning and etching when fabricating the bypass portion 120, and therefore it is possible to suppress increases in manufacturing time and manufacturing costs associated with providing the bypass portion 120.

[0089] As described above, also in this embodiment, when the corresponding light-emitting element 100 is at 0 gradation, the leakage current of the driving transistor Tr1 can be diverted from the light-emitting layer 112 of the light-emitting element 100 by the bypass section 120 provided to connect the first electrode 110 and the second electrode 114. Therefore, according to this embodiment, even if the driving transistor Tr1 is miniaturized, when the corresponding pixel 20 is at 0 gradation, the leakage current generated in the driving transistor Tr1 does not flow into the light-emitting layer 112, and therefore, the light-emitting element 100 can be prevented from emitting light.

[0090] <6.2 Modification> Next, a detailed structure of a light-emitting element 100 according to a modification of this embodiment will be described with reference to Fig. 14. Fig. 14 is a cross-sectional view of the light-emitting element 100 according to a modification of this embodiment, and more specifically, corresponds to a cross section of the light-emitting element 100 cut along the stacking direction of the stacked structure of the light-emitting element 100. Note that a pixel 20 including the light-emitting element 100 having the configuration shown in Fig. 14 has the circuit configuration shown in Fig. 4 described above.

[0091] This modification differs from the fourth embodiment in that, as shown in FIG. 14 , the second electrode 114 has the same area as the light-emitting layer 112 and the first electrode 110. That is, in this modification, the side surfaces of the first electrode 110, the light-emitting layer 112, and the second electrode 114 are flush with each other. Furthermore, in this modification, as shown in FIG. 14 , the bypass portion 120 is provided so as to cover at least a portion of the side surface of the protective film 130, as well as the side surfaces of the second electrode 114, the light-emitting layer 112, and the first electrode 110. Also in this modification, by extending the bypass portion 120 from the side surface of the second electrode 114 to a position between the upper surface and the lower surface of the protective film 130, high-precision mask patterning and etching are not required when fabricating the bypass portion 120, and therefore, increases in manufacturing time and costs associated with providing the bypass portion 120 can be suppressed.

[0092] As described above, in this modification as well, when the corresponding light-emitting element 100 is at 0 gradation, the bypass section 120 provided to connect the first electrode 110 and the second electrode 114 allows the leakage current of the drive transistor Tr1 to be diverted away from the light-emitting layer 112 of the light-emitting element 100. Therefore, according to this modification, even if the drive transistor Tr1 is miniaturized, when the corresponding pixel 20 is at 0 gradation, the leakage current generated in the drive transistor Tr1 does not flow into the light-emitting layer 112, and therefore the light-emitting element 100 can be prevented from emitting light.

[0093] In this embodiment and this modified example, the light emitting device 100 is not limited to the configuration shown in FIGS. 13 and 14, but can be modified into various other configurations.

[0094] <<7. Fifth Embodiment>> <7.1 Detailed Structure> Next, a detailed structure of a light-emitting element 100 according to a fifth embodiment of the present disclosure will be described with reference to Figures 15A to 15D. Figures 15A to 15D are cross-sectional views of the light-emitting element 100 according to the fifth embodiment of the present disclosure, and more specifically, correspond to cross sections obtained when the light-emitting element 100 is cut along the stacking direction of the stacked structure of the light-emitting element 100. Note that a pixel 20 including the light-emitting element 100 having the configuration shown in Figures 15A to 15D has the circuit configuration shown in Figure 4 described above.

[0095] In this embodiment, as shown in Figures 15A to 15D, the second electrode 114 is provided above the first electrode 110 and has a smaller area than the first electrode 110. Furthermore, the second electrode 114 is provided on the light-emitting layer 112 and has the same area as the light-emitting layer 112. That is, in this embodiment, the side surfaces of the light-emitting layer 112 and the second electrode 114 are flush with each other. Furthermore, as shown in Figures 15A to 15D, this embodiment differs from the embodiments described so far in that the bypass section 120 extends from the side surface of the light-emitting layer 112, covers the peripheral portion of the upper surface of the first electrode 110, and extends to at least a portion of the upper surface of the semiconductor substrate 102. In this embodiment, by extending the bypass portion 120 from the side of the light-emitting layer 112 to at least a portion of the upper surface of the semiconductor substrate 102, high-precision mask patterning and etching are not required when fabricating the bypass portion 120, and therefore, increases in manufacturing time and manufacturing costs associated with providing the bypass portion 120 can be suppressed.

[0096] In detail, in the example shown in Figure 15A, the bypass portion 120 is arranged to cover the side surfaces of the second electrode 114 and the light-emitting layer 112, the peripheral portion of the upper surface of the first electrode 110, and part of the upper surface of the semiconductor substrate 102.

[0097] 15B differs from the example of Fig. 15A described above in that the bypass portion 120 extends from the side surface of the second electrode 114 to the side surface of the protective film 130. That is, in the example shown in Fig. 15B, the bypass portion 120 is provided so as to cover the side surfaces of the protective film 130, the second electrode 114, and the light-emitting layer 112, the peripheral portion of the upper surface of the first electrode 110, and part of the upper surface of the semiconductor substrate 102.

[0098] 15C differs from the example of Fig. 15B in that the bypass portion 120 extends onto the upper surface of the protective film 130. That is, in the example shown in Fig. 15C, the bypass portion 120 is provided so as to cover at least a portion of the upper surface of the protective film 130, the side surfaces of the protective film 130, the second electrode 114, and the light-emitting layer 112, the peripheral portion of the upper surface of the first electrode 110, and a portion of the upper surface of the semiconductor substrate 102.

[0099] 15D differs from the example of Fig. 15B described above in that the bypass portion 120 extends from the side surface of the second electrode 114 to a position on the side surface of the protective film 130 along the film thickness direction of the protective film 130 between the upper surface and the lower surface of the protective film 130. That is, in the example shown in Fig. 15D, the bypass portion 120 is provided so as to cover at least a portion of the side surface of the protective film 130, the side surfaces of the second electrode 114 and the light-emitting layer 112, the peripheral portion of the upper surface of the first electrode 110, and a portion of the upper surface of the semiconductor substrate 102.

[0100] As described above, also in this embodiment, when the corresponding light-emitting element 100 is at 0 gradation, the leakage current of the driving transistor Tr1 can be diverted from the light-emitting layer 112 of the light-emitting element 100 by the bypass section 120 provided to connect the first electrode 110 and the second electrode 114. Therefore, according to this embodiment, even if the driving transistor Tr1 is miniaturized, when the corresponding pixel 20 is at 0 gradation, the leakage current generated in the driving transistor Tr1 does not flow into the light-emitting layer 112, and therefore, the light-emitting element 100 can be prevented from emitting light.

[0101] 16A to 16D , a detailed structure of a light-emitting element 100 according to a modification of the fifth embodiment of the present disclosure will be described. Figures 16A to 16D are cross-sectional views of the light-emitting element 100 according to a modification of the fifth embodiment of the present disclosure, and more specifically, correspond to a cross section of the light-emitting element 100 cut along the stacking direction of the stacked structure of the light-emitting element 100. A pixel 20 including the light-emitting element 100 having the configuration shown in Figures 16A to 16D has the circuit configuration shown in Figure 4 described above.

[0102] 16A to 16D , this modification differs from the fifth embodiment in that the second electrode 114 has the same area as the light-emitting layer 112 and the first electrode 110. That is, the side surfaces of the first electrode 110, the light-emitting layer 112, and the second electrode 114 are flush with each other. Furthermore, as shown in FIGS. 16A to 16D , this modification differs from the previously described embodiments in that the bypass portion 120 extends from the side surface of the first electrode 110 to at least a portion of the upper surface of the semiconductor substrate 102. In this modification, by extending the bypass portion 120 from the side surface of the first electrode 110 to at least a portion of the upper surface of the semiconductor substrate 102, high-precision mask patterning and etching are not required when fabricating the bypass portion 120, and therefore increases in manufacturing time and manufacturing costs associated with providing the bypass portion 120 can be suppressed.

[0103] In detail, in the example shown in FIG. 16A, the bypass section 120 is provided so as to cover the side surfaces of the second electrode 114, the light-emitting layer 112, and the first electrode 110, and part of the upper surface of the semiconductor substrate 102.

[0104] 16B differs from the example of Fig. 16A in that the bypass portion 120 extends to the side surface of the protective film 130. That is, in the example shown in Fig. 16B, the bypass portion 120 is provided so as to cover the side surfaces of the protective film 130, the second electrode 114, the light-emitting layer 112, and the first electrode 110, as well as part of the upper surface of the semiconductor substrate 102.

[0105] 16C , the bypass portion 120 differs from the example of Fig. 16B in that the bypass portion 120 extends onto the upper surface of the protective film 130. That is, in the example shown in Fig. 16C , the bypass portion 120 is provided so as to cover at least a portion of the upper surface of the protective film 130, the side surfaces of the protective film 130, the second electrode 114, the light-emitting layer 112, and the first electrode 110, and a portion of the upper surface of the semiconductor substrate 102.

[0106] 16D differs from the example of Fig. 16B described above in that the bypass portion 120 extends from the side surface of the second electrode 114 to a position on the side surface of the protective film 130 along the film thickness direction of the protective film 130 between the upper surface and the lower surface of the protective film 130. That is, in the example shown in Fig. 16D , the bypass portion 120 is provided so as to cover at least a portion of the side surface of the protective film 130, the side surfaces of the second electrode 114, the light-emitting layer 112, and the first electrode 110, and a portion of the upper surface of the semiconductor substrate 102.

[0107] As described above, in this modification as well, when the corresponding light-emitting element 100 is at 0 gradation, the bypass section 120 provided to connect the first electrode 110 and the second electrode 114 allows the leakage current of the drive transistor Tr1 to be diverted away from the light-emitting layer 112 of the light-emitting element 100. Therefore, according to this modification, even if the drive transistor Tr1 is miniaturized, when the corresponding pixel 20 is at 0 gradation, the leakage current generated in the drive transistor Tr1 does not flow into the light-emitting layer 112, and therefore the light-emitting element 100 can be prevented from emitting light.

[0108] In this embodiment and this modified example, the light-emitting element 100 is not limited to the shapes shown in Figures 15A to 15D and Figures 16A to 16D, and can be modified into various shapes.

[0109] <<8. Sixth Embodiment>> Next, with reference to FIGS. 17A and 17B , a detailed structure of a light-emitting element 100 according to a sixth embodiment of the present disclosure will be described. FIG. 17A is a cross-sectional view of the light-emitting element 100 according to the sixth embodiment of the present disclosure. In particular, FIG. 17A corresponds to a cross-section of the light-emitting element 100 cut along the stacking direction of the stacked structure of the light-emitting element 100, and from left to right, a light-emitting element 100R emitting red light, a light-emitting element 100G emitting green light, and a light-emitting element 100B emitting blue light are arranged in this order. Note that a pixel 20 including the light-emitting element 100 having the configuration shown in FIG. 17A has the circuit configuration shown in FIG. 4 described above. Furthermore, FIG. 17B is an explanatory diagram for describing the sixth embodiment of the present disclosure.

[0110] In this embodiment, a plurality of light emitting elements 100 that emit light of different colors will be considered.

[0111] In a comparative example without the bypass section 120, even when currents having the same current density are passed through the light-emitting element 100R emitting red light, the light-emitting element 100G emitting green light, and the light-emitting element 100B emitting blue light, the light-emitting efficiency (brightness) is different. Specifically, as shown on the left side of FIG. 17B , even when the current density is the same, the light-emitting element 100G emitting green light has a higher light-emitting efficiency than the light-emitting element 100R emitting red light and the light-emitting element 100B emitting blue light. Therefore, even when the current density is low enough that the light-emitting element 100R emitting red light and the light-emitting element 100B emitting blue light do not emit light, the light-emitting element 100G emitting green light may emit light. Because of these characteristics, when grayscale 0 (black grayscale display) is displayed, leakage current generated in the drive transistor Tr1 causes the light-emitting element 100G emitting highly visible green light to emit light, thereby reducing the contrast of the display device 10.

[0112] 17B , the tendency (slope) of the increase in luminance efficiency (luminance) with increasing current density differs among light-emitting element 100R emitting red light, light-emitting element 100G emitting green light, and light-emitting element 100B emitting blue light. Therefore, when attempting to finely adjust the luminance gradation by changing the current flow, since the tendency (slope) of the increase in luminance efficiency (luminance) of each light-emitting element 100 differs, it is difficult to adjust the luminance with a desired range of gradation depending on the color of light emitted by light-emitting element 100.

[0113] Therefore, in this embodiment, the bypass section 120 having a different resistance value is provided for each of the light-emitting element 100R emitting red light, the light-emitting element 100G emitting green light, and the light-emitting element 100B emitting blue light. Specifically, in this embodiment, for example, the resistance value of the bypass section 120 for the light-emitting element 100G emitting green light is set smaller than the bypass sections 120 for the light-emitting element 100R emitting red light and the light-emitting element 100B emitting blue light, thereby facilitating current flow. By doing so, in this embodiment, in the light-emitting element 100G having high luminous efficiency, leakage current from the driving transistor Tr1 is easily diverted from the light-emitting layer 112 of the light-emitting element 100. Therefore, in this embodiment, when the corresponding pixel 20 is at gradation 0, leakage current generated in the driving transistor Tr1 does not flow into the light-emitting layer 112 of the light-emitting element 100G emitting green light with high luminous efficiency, thereby suppressing light emission from the light-emitting element 100G. As a result, according to this embodiment, even when the driving transistor Tr1 is miniaturized, it is possible to prevent the contrast of the display device 10 from decreasing.

[0114] Furthermore, in this embodiment, the bypass sections 120 having different resistance values ​​are provided for the light-emitting element 100R emitting red light, the light-emitting element 100G emitting green light, and the light-emitting element 100B emitting blue light. As a result, in this embodiment, as shown on the right side of FIG. 17B , the tendency (slope) of increase in luminous efficiency (luminance) with respect to an increase in current density can be made similar between the light-emitting element 100R emitting red light, the light-emitting element 100G emitting green light, and the light-emitting element 100B emitting blue light. Therefore, in this embodiment, since the tendency (slope) of increase in luminous efficiency (luminance) of each light-emitting element 100 is similar, it is easy to finely adjust the luminance with a desired range of gradations for multiple light-emitting elements 100 emitting light of different colors.

[0115] 17A , by changing the width, film thickness, or area of ​​the bypass portion 120, the resistance value of the bypass portion 120 can be changed for each color emitted by the light-emitting element 100. Alternatively, in this embodiment, by changing the material of the bypass portion 120, the resistance value of the bypass portion 120 can be changed for each color emitted by the light-emitting element 100.

[0116] In this embodiment, it is sufficient that the resistance value of the bypass section 120 differs for each color emitted by the light-emitting element 100, and it is not limited to making the resistance value of the bypass section 120 of the light-emitting element 100G that emits green light smaller than the bypass sections 120 of the light-emitting element 100R that emits red light and the light-emitting element 100B that emits blue light.

[0117] As described above, in this embodiment, the bypass section 120 having a different resistance value is provided for each of the light emitting element 100R that emits red light, the light emitting element 100G that emits green light, and the light emitting element 100B that emits blue light. By doing so, in this embodiment, in the light emitting element 100 that emits a predetermined light, the leakage current of the drive transistor Tr1 is easily diverted from the light emitting layer 112 of the light emitting element 100. Therefore, in this embodiment, when the corresponding pixel 20 is at gradation 0, the leakage current generated in the drive transistor Tr1 does not flow into the light emitting layer 112 of the light emitting element 100 that emits light of a predetermined color, and therefore, light emission by the light emitting element 100 can be suppressed.

[0118] Furthermore, in this embodiment, by changing the resistance value of the bypass section 120 for each color emitted by the light-emitting element 100, the tendency (slope) of increase in luminous efficiency (luminance) relative to an increase in current density can be made similar between multiple light-emitting elements 100 that emit light of different colors. Therefore, in this embodiment, since the tendency (slope) of increase in luminous efficiency (luminance) of each light-emitting element 100 is similar, it becomes easy to finely adjust the luminance with a desired range of gradations in multiple light-emitting elements 100 that emit light of different colors.

[0119] In this embodiment, the light emitting device 100 is not limited to the form shown in FIG. 17A, but can be modified into various forms.

[0120] 9. Seventh Embodiment Next, a detailed structure of a light-emitting element 100 according to a seventh embodiment of the present disclosure will be described with reference to Fig. 18A and Fig. 18B. Fig. 18A is a plan view of the light-emitting element 100 according to the seventh embodiment of the present disclosure. Fig. 18B is a cross-sectional view of the light-emitting element 100 according to the seventh embodiment of the present disclosure, and corresponds to the cross section of the light-emitting element 100 taken along line A-A' shown in Fig. 18A. Note that a pixel 20 including the light-emitting element 100 having the configuration shown in Fig. 18B has the circuit configuration shown in Fig. 4 described above.

[0121] In this embodiment, as shown in Figures 18A and 18B, the bypass section 120 may be provided so as to cover a portion of the side surface of the light-emitting element 100. In particular, as shown in Figure 18A, the bypass section 120 is provided only on the left side surface of the stack of layers of the light-emitting element 100 (specifically, the light-emitting layer 112, the second electrode 114, and the protective film 130). Even in this case, the bypass section 120 can connect the first electrode 110 and the second electrode 114. In this way, in this embodiment, by providing the bypass section 120 on a portion of the side surface of the light-emitting element 100, the resistance value of the bypass section 120 can be finely adjusted.

[0122] As described above, also in this embodiment, when the corresponding light-emitting element 100 is at 0 gradation, the leakage current of the driving transistor Tr1 can be diverted from the light-emitting layer 112 of the light-emitting element 100 by the bypass section 120 provided to connect the first electrode 110 and the second electrode 114. Therefore, according to this embodiment, even if the driving transistor Tr1 is miniaturized, when the corresponding pixel 20 is at 0 gradation, the leakage current generated in the driving transistor Tr1 does not flow into the light-emitting layer 112, and therefore, the light-emitting element 100 can be prevented from emitting light.

[0123] In this embodiment, the light emitting device 100 is not limited to the configuration shown in FIGS. 18A and 18B, but can be modified into various other configurations.

[0124] <<10. Eighth Embodiment>> Next, a detailed structure of a light-emitting element 100 according to an eighth embodiment of the present disclosure will be described with reference to FIGS. 19A to 19C. FIG. 19A is a plan view of the light-emitting element 100 according to the eighth embodiment of the present disclosure. FIG. 19B is a cross-sectional view of the light-emitting element 100 according to the eighth embodiment of the present disclosure, corresponding to the cross-section of the light-emitting element 100 taken along line B-B' shown in FIG. 19A. FIG. 19C is a cross-sectional view of the light-emitting element 100 according to the eighth embodiment of the present disclosure, corresponding to the cross-section of the light-emitting element 100 taken along line CC' shown in FIG. 19A. Note that a pixel 20 including the light-emitting element 100 having the configuration shown in FIGS. 19A to 19C has the circuit configuration shown in FIG. 4 described above.

[0125] 19A and 19C , the light-emitting layer 112 of one light-emitting element 100 is connected to the light-emitting layer 112 of an adjacent light-emitting element 100 by a connection portion (first connection portion) that is a part of the light-emitting layer 112, and the second electrode 114 of one light-emitting element 100 is connected to the second electrode 114 of the adjacent light-emitting element 100 by a connection portion (second connection portion) that is a part of the second electrode 114. That is, in this embodiment, the light-emitting layer 112 and the second electrode 114 are provided as an integrated layer by being partially connected to the light-emitting layer 112 and the second electrode 114 of the adjacent light-emitting element 100. Note that, because the light-emitting layer 112 and the second electrode 114 are partially connected to the light-emitting layer 112 and the second electrode 114 of the adjacent light-emitting element 100, they appear not to be connected to the light-emitting layer 112 and the second electrode 114 of the adjacent light-emitting element 100 in different cross sections, as shown in FIG. 19B .

[0126] Furthermore, in this embodiment, unlike the embodiments described above, the protective films 130 and 132 are provided so as to cover the sidewalls of the openings 150, so that the wiring 140 for electrically connecting the second electrodes 114 of adjacent light-emitting elements 100 is not required. Furthermore, in this embodiment, as shown in FIGS. 19B and 19C , the outer periphery of the first electrode 110 is covered with an inter-pixel insulating film 160, and the central region of the first electrode 110 exposed through the opening (pixel opening) of the inter-pixel insulating film 160 functions as an electrode. In other words, the inter-pixel insulating film 160 defines the light-emitting region by the pixel opening. In this embodiment, by providing the inter-pixel insulating film 160 in this manner, current leakage between adjacent light-emitting elements 100 can be suppressed. The inter-pixel insulating film 160 can be formed of, for example, an inorganic insulating film such as silicon oxide (SiOx), silicon nitride (SiNx), or silicon oxynitride (SiON), or an organic insulating film such as a polyimide resin, an acrylic resin, or a novolac resin.

[0127] Furthermore, in this embodiment, as shown in FIG. 19B , on the side surface of the light-emitting element 100 where the light-emitting layer 112 and the second electrode 114 are not connected to the light-emitting layer 112 and the second electrode 114 of an adjacent light-emitting element 100, the bypass section 120 is provided so as to cover the side surface of the second electrode 114 and the light-emitting layer 112, and is in contact with the upper surface of the first electrode 110.

[0128] As described above, also in this embodiment, the bypass section 120 provided to connect the first electrode 110 and the second electrode 114 can divert the leakage current of the drive transistor Tr1 from the light-emitting layer 112 of the light-emitting element 100 when the corresponding light-emitting element 100 is at 0 gradation (when displaying black gradation). Therefore, according to this embodiment, even if the drive transistor Tr1 is miniaturized, when the corresponding pixel 20 is at 0 gradation (when displaying black gradation), the leakage current generated in the drive transistor Tr1 does not flow into the light-emitting layer 112, and therefore, the light-emitting element 100 can be prevented from emitting light.

[0129] In this embodiment, the light emitting device 100 is not limited to the shapes shown in FIGS. 19A to 19C, but can be modified into various shapes.

[0130] 20A and 20B are explanatory views showing the method for manufacturing the light-emitting element 100 according to the ninth embodiment of the present disclosure, and correspond to the cross-sectional views of FIG.

[0131] First, as shown on the left side of Fig. 20A , a first electrode 110, a light-emitting layer 112, and a second electrode 114 are laminated on a semiconductor substrate 102 provided with wiring 170, vias 172, etc., and a protective film 130 is laminated thereon. Next, as shown second from the left in Fig. 20A , a mask 180 patterned by lithography or the like is formed on the protective film 130.

[0132] Next, the protective film 130 is dry-etched according to the pattern of the mask 180, thereby obtaining the configuration shown in the third figure from the left in Fig. 20A. Then, as shown on the right side of Fig. 20A, a conductive material film that becomes the bypass portion 120 is formed by a PVD (Physical Vapor Deposition) method so as to cover the protective film 130 and the upper surface of the semiconductor substrate 102.

[0133] Next, as shown on the left side of Fig. 20B , the conductive material film that is located on the upper surface of the protective film 130 and that will become the bypass portion 120 is removed by etching. Then, as shown in the second from the left in Fig. 20B , a protective film 132 is deposited by a chemical vapor deposition (CVD) method so as to cover the upper surfaces of the protective film 130 and the semiconductor substrate 102. Furthermore, as shown in the third from the left in Fig. 20B , a mask 182 that is patterned by lithography or the like is formed on the protective film 132.

[0134] Then, the protective films 130 and 132 are dry-etched according to the pattern of the mask 182 to form an opening that exposes the second electrode 114. Next, by a PVD method, wiring 140 is formed on the sidewalls of the opening, the bottom of the opening, and part of the upper surface of the protective film 132. Furthermore, by stacking a protective film 134 on the wiring 140 and the protective film 132 by a CVD method, the light-emitting element 100 according to this embodiment can be obtained as shown on the right side of FIG.

[0135] It should be noted that the light-emitting element 100 according to this embodiment is not limited to being manufactured by the method described above, but can be manufactured by using a method used in the manufacture of general semiconductor devices.

[0136] Examples of the above-mentioned methods include PVD, CVD, and ALD. Examples of PVD methods include vacuum deposition, EB (electron beam) deposition, various sputtering methods (magnetron sputtering, RF (radio frequency)-DC (direct current) combined bias sputtering, ECR (electron cyclotron resonance) sputtering, facing target sputtering, and high-frequency sputtering), ion plating, laser ablation, molecular beam epitaxy (MBE), and laser transfer. Examples of CVD methods include plasma CVD, thermal CVD, metal organic (MO) CVD, and photo-CVD. Other methods include electroplating, electroless plating, spin coating, dipping, casting, microcontact printing, drop casting, various printing methods such as screen printing, inkjet printing, offset printing, gravure printing, and flexographic printing, stamping, spraying, and various coating methods such as air doctor coater, blade coater, rod coater, knife coater, squeeze coater, reverse roll coater, transfer roll coater, gravure coater, kiss coater, cast coater, spray coater, slit orifice coater, and calendar coater. Furthermore, patterning methods include chemical etching such as shadow masking, laser transfer, and photolithography, and physical etching using ultraviolet light or lasers. Additionally, planarization techniques include CMP, laser planarization, and reflow.

[0137] <<12. Summary>> As described above, in the embodiment of the present disclosure, the bypass section 120 provided to connect the first electrode 110 and the second electrode 114 can divert the leakage current of the drive transistor Tr1 from the light-emitting layer 112 of the light-emitting element 100 when the corresponding light-emitting element 100 is at 0 gradation (when displaying black gradation). Therefore, according to the embodiment, even if the drive transistor Tr1 is miniaturized, the leakage current generated in the drive transistor Tr1 does not flow into the light-emitting layer 112 when the corresponding pixel 20 is at 0 gradation (when displaying black gradation), thereby preventing the light-emitting element 100 from emitting light. As a result, according to the embodiment, even if the drive transistor Tr1 is miniaturized, it is possible to prevent a decrease in the contrast of the display device 10.

[0138] It should be noted that the embodiments of the present disclosure are not limited to the embodiments shown in the drawings, but can be modified in various ways and can also be combined with each other.

[0139] The technology of the present disclosure may be applied not only to the display device 10 but also to a lighting device or the like.

[0140] <<13. Modifications>> <13.1 Modification 1> Next, as a modification of the embodiment of the present disclosure, a modification of the relationship between the normal LN passing through the center of the pixel 20 (more specifically, the center of the plurality of light-emitting elements 100 included in one pixel 20), the normal LN' passing through the center of the lens member (more specifically, the on-chip lens), and the normal LN" passing through the center of the wavelength selection unit (more specifically, the color filter) will be described with reference to FIGS. 21A to 21G. FIGS. 21A to 21G are conceptual diagrams for explaining the relationship between the normal LN passing through the center of the light-emitting unit, the normal LN' passing through the center of the lens member, and the normal LN" passing through the center of the wavelength selection unit. In the following description, the center of the pixel 20 will be referred to as the center of the light-emitting unit.

[0141] In an embodiment of the present disclosure, the size of a wavelength selection section (e.g., a color filter) may be changed as appropriate in accordance with the light emitted by the pixel 20. Furthermore, when a light absorption layer (black matrix layer) is provided between the wavelength selection sections (e.g., color filters) of adjacent pixels 20, the size of the light absorption layer (black matrix layer) may be changed as appropriate in accordance with the light emitted by the pixel 20. Furthermore, the size of the wavelength selection section (e.g., a color filter) may be adjusted by adjusting the distance (offset amount) d between the normal line passing through the center of the pixel 20 and the normal line passing through the center of the color filter. ０ The planar shape of the wavelength selection unit (for example, a color filter) may be the same as, similar to, or different from the planar shape of the lens member (for example, an on-chip lens).

[0142] For example, as shown in FIG. 21A, the normal line LN passing through the center of the light-emitting unit, the normal line LN″ passing through the center of the wavelength selecting unit, and the normal line LN′ passing through the center of the lens member may be made to coincide with each other. In other words, the distance (offset amount) D between the normal line passing through the center of the light-emitting unit and the normal line passing through the center of the lens member is ０ and the distance (offset amount) d between the normal line passing through the center of the light emitting section and the normal line passing through the center of the wavelength selecting section. ０ and can be equal to 0 (zero).

[0143] Also, for example, as shown in FIG. 21B, the normal line LN passing through the center of the light emitting section and the normal line LN" passing through the center of the wavelength selecting section are coincident, but the normal line LN passing through the center of the light emitting section and the normal line LN" passing through the center of the wavelength selecting section may not be coincident with the normal line LN' passing through the center of the lens member. In other words, D ０ ≠d ０ = 0.

[0144] Also, for example, as shown in FIG. 21C, the normal line LN passing through the center of the light emitting section, the normal line LN" passing through the center of the wavelength selecting section, and the normal line LN' passing through the center of the lens member may not coincide, and the normal line LN" passing through the center of the wavelength selecting section and the normal line LN' passing through the center of the lens member may coincide. In other words, D ０ = d ０ >0.

[0145] Also, for example, as shown in FIG. 21D, a normal line LN passing through the center of the light emitting section, a normal line LN" passing through the center of the wavelength selecting section, and a normal line LN' passing through the center of the lens member do not coincide with each other, and a normal line LN' passing through the center of the lens member does not coincide with the normal line LN passing through the center of the light emitting section and the normal line LN" passing through the center of the wavelength selecting section. Here, it is preferable that the center of the wavelength selecting section (shown by a black circle in FIG. 21D) is located on a straight line LL connecting the center of the light emitting section and the center of the lens member (shown by a black circle in FIG. 21D). Specifically, the distance from the center of the light emitting section to the center of the wavelength selecting section in the thickness direction is defined as LL. １ , the distance from the center of the wavelength selection portion to the center of the lens member in the thickness direction is LL ２ When this is done, D ０ >d ０ > 0, and taking into account manufacturing variations, d ０ :D ０ =LL １ : (LL １ +LL ２ ) is preferably satisfied.

[0146] In addition, the stacking relationship between the wavelength tip portion and the lens member may be reversed. In such a case, for example, as shown in FIG. 21E, the normal line LN passing through the center of the light emitting portion, the normal line LN″ passing through the center of the wavelength selecting portion, and the normal line LN′ passing through the center of the lens member may be made to coincide. In other words, D ０ = d ０ = 0.

[0147] Also, for example, as shown in FIG. 21F, the normal line LN passing through the center of the light emitting section, the normal line LN" passing through the center of the wavelength selecting section, and the normal line LN' passing through the center of the lens member may not coincide, and the normal line LN" passing through the center of the wavelength selecting section and the normal line LN' passing through the center of the lens member may coincide. In other words, D ０ = d ０ >0.

[0148] Furthermore, as shown in the conceptual diagram of FIG. 21G, a normal line LN passing through the center of the light-emitting section, a normal line LN" passing through the center of the wavelength selection section, and a normal line LN' passing through the center of the lens member do not coincide with each other, and a normal line LN' passing through the center of the lens member does not coincide with the normal line LN passing through the center of the light-emitting section and the normal line LN" passing through the center of the wavelength selection section. Here, it is preferable that the center of the wavelength selection section is located on a straight line LL connecting the center of the light-emitting section and the center of the lens member. Specifically, the distance from the center of the light-emitting section in the thickness direction to the center of the wavelength selection section (shown by a black circle in FIG. 21G) is defined as LL. １ , the distance from the center of the wavelength selection portion in the thickness direction to the center of the lens member (shown by a black circle in FIG. 21G) is LL ２ When this is the case, d ０ >D ０ >0, and taking into account manufacturing variations, D ０ :d ０ =LL ２ : (LL １ +LL ２ ) is preferably satisfied.

[0149] 13.2 Modification 2 The pixel 1100 (specifically, the light-emitting element 100) used in the display device according to the embodiment of the present disclosure described above may be configured to include a resonator structure that resonates light generated in the light-emitting portion (the light-emitting layer 112). Hereinafter, the resonator structure will be described with reference to FIGS. 22 to 28 . FIG. 22 is a schematic cross-sectional view illustrating a first example of the resonator structure, FIG. 23 is a schematic cross-sectional view illustrating a second example of the resonator structure, and FIG. 24 is a schematic cross-sectional view illustrating a third example of the resonator structure. Furthermore, FIG. 25 is a schematic cross-sectional view illustrating a fourth example of the resonator structure, and FIG. 26 is a schematic cross-sectional view illustrating a fifth example of the resonator structure. Furthermore, FIG. 27 is a schematic cross-sectional view illustrating a sixth example of the resonator structure, and FIG. 28 is a schematic cross-sectional view illustrating a seventh example of the resonator structure.

[0150] (Resonator Structure: First Example) Fig. 22 is a schematic cross-sectional view for explaining a first example of the resonator structure. In the first example, the first electrode (e.g., anode electrode) 1202 is formed to have a common film thickness in each pixel 1100. The same is true for the second electrode (e.g., cathode electrode) 1206.

[0151] 22 , a reflector 1401 is disposed below the first electrode 1202 of the pixel 1100, with an optical adjustment layer 1402 sandwiched therebetween. A resonator structure is formed between the reflector 1401 and the second electrode 1206, which resonates light generated by the organic layer (more specifically, the light-emitting portion) 1204.

[0152] The reflector 1401 is formed to have a common film thickness in each pixel 1100. The film thickness of the optical adjustment layer 1402 varies depending on the color to be displayed by the pixel 1100. By having the optical adjustment layers 1402R, 1402G, and 1402B have different film thicknesses, it is possible to set an optical distance that produces optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0153] 22, the reflectors 1401 in the pixels 1100R, 1100G, and 1100B are arranged so that their upper surfaces are aligned. As described above, the film thickness of the optical adjustment layer 1402 differs depending on the color to be displayed by the pixel 1100, and therefore the position of the upper surface of the second electrode 1206 differs depending on the type of pixel 1100R, 1100G, and 1100B.

[0154] The reflector 1401 can be formed using, for example, a metal such as aluminum (Al), silver (Ag), or copper (Cu), or an alloy containing these as the main component.

[0155] The optical adjustment layer 1402 can be made of inorganic insulating materials such as silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), or organic resin materials such as acrylic resins and polyimide resins. The optical adjustment layer 1402 may be a single layer or a laminated film made of a plurality of these materials. The number of layers may vary depending on the type of pixel 1100.

[0156] The first electrode 1202 can be formed using a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0157] The second electrode 1206 preferably functions as a semi-transmissive reflective film. The second electrode 1206 can be formed using magnesium (Mg) or silver (Ag), a magnesium-silver alloy (MgAg) containing these as main components, or an alloy containing an alkali metal or an alkaline earth metal.

[0158] 23 is a schematic cross-sectional view for explaining a second example of the resonator structure. In the second example, the first electrode 1202 and the second electrode 1206 are formed to have the same film thickness in each pixel 1100.

[0159] Also in the second example, a reflector 1401 is disposed below the first electrode 1202 of the pixel 1100, with an optical adjustment layer 1402 sandwiched therebetween. A resonator structure that resonates light generated by the organic layer 1204 is formed between the reflector 1401 and the second electrode 1206. As in the first example, the reflector 1401 is formed to a common film thickness in each pixel 1100, and the film thickness of the optical adjustment layer 1402 differs depending on the color that the pixel 1100 is to display.

[0160] In the first example shown in Figure 22, the upper surfaces of the reflectors 1401 in the pixels 1100R, 1100G, and 1100B are arranged to be aligned, and the position of the upper surface of the second electrode 1206 differs depending on the type of pixel 1100R, 1100G, and 1100B.

[0161] 23 , the upper surfaces of the second electrodes 1206 are aligned in the pixels 1100R, 1100G, and 1100B. To align the upper surfaces of the second electrodes 1206, the upper surfaces of the reflectors 1401 in the pixels 1100R, 1100G, and 1100B are aligned differently depending on the type of pixel 1100R, 1100G, and 1100B. Therefore, the lower surface of the reflector 1401 has a stepped shape that corresponds to the type of pixel 1100R, 1100G, and 1100B.

[0162] The materials constituting the reflector 1401, the optical adjustment layer 1402, the first electrode 1202 and the second electrode 1206 are the same as those described in the first example, and therefore will not be described again.

[0163] 24 is a schematic cross-sectional view illustrating a third example of the resonator structure. In the third example, the first electrode 1202 and the second electrode 1206 are formed to have the same film thickness in each pixel 1100.

[0164] Also in the third example, a reflector 1401 is disposed below the first electrode 1202 of the pixel 1100, with an optical adjustment layer 1402 sandwiched therebetween. A resonator structure that resonates light generated by the organic layer 1204 is formed between the reflector 1401 and the second electrode 1206. As in the first and second examples, the film thickness of the optical adjustment layer 1402 varies depending on the color to be displayed by the pixel 1100. As in the second example, the upper surface of the second electrode 1206 is disposed so as to be aligned in the pixels 1100R, 1100G, and 1100B.

[0165] In the second example shown in FIG. 23, in order to align the upper surfaces of the second electrodes 1206, the lower surface of the reflector 1401 has a stepped shape corresponding to the type of pixel 1100R, 1100G, or 1100B.

[0166] 24, the film thickness of the reflector 1401 is set to be different depending on the type of pixel 1100R, 1100G, and 1100B. More specifically, the film thickness is set so that the bottom surfaces of the reflectors 1401R, 1401G, and 1401B are aligned.

[0167] The materials constituting the reflector 1401, the optical adjustment layer 1402, the first electrode 1202 and the second electrode 1206 are the same as those described in the first example, and therefore will not be described again.

[0168] (Fourth Example of Resonator Structure) FIG. 25 is a schematic cross-sectional view for explaining a fourth example of the resonator structure.

[0169] 22 , the first electrode 1202 and the second electrode 1206 of the pixel 1100 are formed to have the same film thickness. A reflector 1401 is disposed below the first electrode 1202 of the pixel 1100 with an optical adjustment layer 1402 sandwiched therebetween.

[0170] In contrast to this, in the fourth example shown in FIG. 25, the optical adjustment layer 1402 is omitted, and the film thickness of the first electrode 1202 is set to be different depending on the type of pixel 1100R, 1100G, 1100B.

[0171] The reflector 1401 is formed to have a common film thickness in each pixel 1100. The film thickness of the first electrode 1202 varies depending on the color to be displayed by the pixel 1100. By having the first electrodes 1202R, 1202G, and 1202B have different film thicknesses, it is possible to set an optical distance that generates optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0172] The materials constituting the reflector 1401, the first electrode 1202 and the second electrode 1206 are the same as those described in the first example, and therefore a description thereof will be omitted.

[0173] (Resonator Structure: Fifth Example) FIG. 26 is a schematic cross-sectional view for explaining a fifth example of the resonator structure.

[0174] 22, the first electrode 1202 and the second electrode 1206 are formed to have the same film thickness in each pixel 1100. A reflector 1401 is disposed below the first electrode 1202 of the pixel 1100 with an optical adjustment layer 1402 sandwiched therebetween.

[0175] 26, the optical adjustment layer 1402 is omitted, and instead, an oxide film 1404 is formed on the surface of the reflector 1401. The thickness of the oxide film 1404 is set to differ depending on the type of pixel 1100R, 1100G, and 1100B.

[0176] The thickness of the oxide film 1404 varies depending on the color to be displayed by the pixel 1100. By having the oxide films 1404R, 1404G, and 1404B have different thicknesses, it is possible to set an optical distance that produces optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0177] The oxide film 1404 is a film obtained by oxidizing the surface of the reflector 1401, and is made of, for example, aluminum oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, etc. The oxide film 1404 functions as an insulating film for adjusting the optical path length (optical distance) between the reflector 1401 and the second electrode 1206.

[0178] The oxide film 1404, which has a different thickness depending on the type of pixel 1100R, 1100G, 1100B, can be formed, for example, as follows.

[0179] First, a container is filled with an electrolyte, and the substrate on which the reflector 1401 is formed is immersed in the electrolyte. An electrode is also disposed so as to face the reflector 1401.

[0180] Then, a positive voltage is applied to the reflector 1401 with the electrode as a reference, and the reflector 1401 is anodized. The thickness of the oxide film formed by anodization is proportional to the voltage value applied to the electrode. Therefore, anodization is performed while applying voltages to the reflectors 1401R, 1401G, and 1401B according to the types of pixels 1100R, 1100G, and 1100B, respectively. This allows oxide films 1404 with different thicknesses to be formed simultaneously.

[0181] The materials constituting the reflector 1401, the first electrode 1202 and the second electrode 1206 are the same as those described in the first example, and therefore a description thereof will be omitted.

[0182] (Resonator Structure: Sixth Example) FIG. 27 is a schematic cross-sectional view illustrating a sixth example of the resonator structure. In the sixth example, the pixel 1100 is configured by stacking a first electrode 1202, an organic layer 1204, and a second electrode 1206. However, in the sixth example, the first electrode 1202 is formed to function as both an electrode and a reflector. The first electrode (also known as reflector) 1202 is formed from a material having an optical constant selected according to the type of pixel 1100R, 1100G, or 1100B. By varying the phase shift caused by the first electrode (also known as reflector) 1202, it is possible to set an optical distance that generates optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0183] The first electrode (also serving as a reflector) 1202 can be made of a metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy containing any of these as a main component. For example, the first electrode (also serving as a reflector) 1202R of the pixel 1100R can be made of copper (Cu), and the first electrode (also serving as a reflector) 1202G of the pixel 1100G and the first electrode (also serving as a reflector) 1202B of the pixel 1100B can be made of aluminum.

[0184] The material constituting the second electrode 1206 is the same as that described in the first example, and therefore a description thereof will be omitted.

[0185] (Resonator Structure: Seventh Example) Figure 28 is a schematic cross-sectional view illustrating a seventh example of the resonator structure. The seventh example is basically a configuration in which the sixth example is applied to the pixels 1100R and 1100G, and the first example is applied to the pixel 1100B. Even with this configuration, it is possible to set an optical distance that generates optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0186] The first electrodes (which also serve as reflectors) 1202R and 1202G used in the pixels 1100R and 1100G can be made of a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy containing these as the main component.

[0187] The materials constituting the reflector 1401B, the optical adjustment layer 1402B, and the first electrode 1202B used in the pixel 1100B are the same as those described in the first example, and therefore description thereof will be omitted.

[0188] <<14. Application Examples>> For example, the technology according to the present disclosure may be applied to the display units of various electronic devices, etc. Therefore, examples of electronic devices to which the technology can be applied will be described below.

[0189] 29A is a front view showing an example of the appearance of a digital still camera 500, and Fig. 29B is a rear view showing an example of the appearance of the digital still camera 500. This digital still camera 500 is an interchangeable lens single-lens reflex type, and has an interchangeable taking lens unit (interchangeable lens) 512 located approximately in the center of the front of a camera main body 511, and a grip part 513 for the photographer to hold on the left side of the front.

[0190] A monitor 514 is provided at a position shifted to the left from the center on the back of the camera body 511. An electronic viewfinder (eyepiece window) 515 is provided above the monitor 514. By looking through the electronic viewfinder 515, the photographer can visually confirm the optical image of the subject guided by the photographing lens unit 512 and determine the composition. The display device 10 according to an embodiment of the present disclosure can be used as the monitor 514 or the electronic viewfinder 515.

[0191] 30 is an external view of a head-mounted display 600. The head-mounted display 600 has, for example, ear hooks 612 on both sides of a glasses-shaped display unit 611 for wearing on the user's head. In this head-mounted display 600, the display unit 611 can be a display device 10 according to an embodiment of the present disclosure.

[0192] 31 is an external view of a see-through head mounted display 634. The see-through head mounted display 634 is composed of a main body 632, an arm 633, and an eyepiece tube 631.

[0193] The main body 632 is connected to the arm 633 and the glasses 630. Specifically, an end of the long side of the main body 632 is coupled to the arm 633, and one side of the main body 632 is connected to the glasses 630 via a connecting member. The main body 632 may also be worn directly on the head of the human body.

[0194] The main body 632 incorporates a control board for controlling the operation of the see-through head-mounted display 634 and a display unit. The arm 633 connects the main body 632 to the lens barrel 631 and supports the lens barrel 631. Specifically, the arm 633 is coupled to an end of the main body 632 and an end of the lens barrel 631, respectively, and fixes the lens barrel 631. The arm 633 also incorporates a signal line for communicating data related to images provided from the main body 632 to the lens barrel 631.

[0195] The lens barrel 631 projects image light provided from the main body 632 via the arm 633 through an eyepiece lens toward the eyes of a user wearing the see-through head mounted display 634. In this see-through head mounted display 634, the display unit of the main body 632 can use the display device 10 according to an embodiment of the present disclosure.

[0196] 32 shows an example of the appearance of a television device 710. This television device 710 has, for example, an image display screen unit 711 including a front panel 712 and a filter glass 713, and this image display screen unit 711 is configured by the display device 10 according to an embodiment of the present disclosure.

[0197] 33 shows an example of the appearance of a smartphone 800. The smartphone 800 has a display unit 802 that displays various information, an operation unit that includes buttons and the like that accept operation inputs from the user, and the like. The display unit 802 can be the display device 10 according to this embodiment.

[0198] 34A and 34B are diagrams showing the internal configuration of a vehicle having the display device 10 according to an embodiment of the present disclosure as a display device. In detail, Fig. 34A is a diagram showing the state of the interior of the vehicle from the rear to the front, and Fig. 34B is a diagram showing the state of the interior of the vehicle from diagonally rear to diagonally front.

[0199] 34A and 34B has a center display 911, a console display 912, a head-up display 913, a digital rearview mirror 914, a steering wheel display 915, and a rear entertainment display 916. The display device 10 according to an embodiment of the present disclosure can be applied to some or all of these displays.

[0200] The center display 911 is disposed on the center console 907 in a position facing the driver's seat 901 and the passenger seat 902. While FIGS. 34A and 34B show an example of a horizontally elongated center display 911 extending from the driver's seat 901 side to the passenger seat 902 side, the screen size and location of the center display 911 are arbitrary. The center display 911 can display information detected by various sensors (not shown). As a specific example, the center display 911 can display an image captured by an image sensor, a distance image to obstacles in front of or to the side of the vehicle measured by a ToF (Time of Flight) sensor, the body temperature of a passenger detected by an infrared sensor, etc. The center display 911 can be used to display, for example, at least one of safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information.

[0201] The safety-related information includes information such as detection of drowsiness, distraction, child mischief, whether a seatbelt is fastened, and whether a passenger has been abandoned. This information is detected, for example, by a sensor (not shown) placed on the back side of the center display 911. The operation-related information is obtained by detecting gestures related to passenger operations using a sensor. The detected gestures may include operations of various in-vehicle equipment. For example, the sensor may detect operations of the air conditioning system, navigation system, AV (audio / visual) system, lighting system, etc. The life log includes life logs of all passengers. For example, the life log includes a record of each passenger's behavior while in the vehicle. By acquiring and saving the life log, the condition of the passenger at the time of the accident can be confirmed. The health-related information is obtained by detecting the passenger's body temperature using a temperature sensor and inferring the passenger's health condition based on the detected body temperature. Alternatively, the passenger's face may be captured using an image sensor, and the passenger's health condition may be inferred from the facial expression in the captured image. Furthermore, the system may have an automated voice conversation with the occupant and estimate the occupant's health condition based on the occupant's responses. The authentication / identification-related information includes a keyless entry function that uses a sensor to perform facial recognition, a function that automatically adjusts seat height and position using facial recognition, etc. The entertainment-related information includes a function that uses a sensor to detect operation information of an AV device by the occupant, and a function that recognizes the occupant's face using a sensor and provides content suitable for the occupant via the AV device.

[0202] The console display 912 can be used to display, for example, life log information. The console display 912 is disposed near the shift lever 908 on the center console 907 between the driver's seat 901 and the passenger seat 902. The console display 912 can also display information detected by various sensors (not shown). The console display 912 may also display an image of the vehicle's surroundings captured by an image sensor, or an image showing the distance to obstacles around the vehicle.

[0203] The head-up display 913 is virtually displayed behind the windshield 904 in front of the driver's seat 901. The head-up display 913 can be used to display, for example, at least one of safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information. Since the head-up display 913 is often virtually disposed in front of the driver's seat 901, it is suitable for displaying information directly related to the operation of the vehicle, such as the vehicle's speed and remaining fuel (battery) level.

[0204] The digital rearview mirror 914 can not only display the view behind the vehicle but also the status of passengers in the rear seats. Therefore, by placing a sensor (not shown) on the back side of the digital rearview mirror 914, it can be used to display life log information, for example.

[0205] The steering wheel display 915 is disposed near the center of the steering wheel 906 of the vehicle. The steering wheel display 915 can be used to display at least one of, for example, safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information. In particular, because the steering wheel display 915 is located near the driver's hands, it is suitable for displaying life log information such as the driver's body temperature, and for displaying information regarding the operation of AV equipment, air conditioning equipment, etc.

[0206] The rear entertainment display 916 is attached to the back side of the driver's seat 901 and the passenger seat 902 and is intended for viewing by rear seat passengers. The rear entertainment display 916 can be used to display, for example, at least one of safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information. In particular, since the rear entertainment display 916 is located directly in front of the rear seat passengers, information related to the rear seat passengers is displayed on the rear entertainment display 916. For example, the rear entertainment display 916 may display information related to the operation of an AV device or an air conditioning system, or may display the results of measurements such as the body temperature of the rear seat passengers taken with a temperature sensor (not shown).

[0207] <<15. Supplementary Information>> Although preferred embodiments of the present disclosure have been described in detail above with reference to the accompanying drawings, the technical scope of the present disclosure is not limited to such examples. It is clear that a person skilled in the art of the present disclosure can conceive of various modified or altered examples within the scope of the technical idea described in the claims, and it is understood that these also naturally fall within the technical scope of the present disclosure.

[0208] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that will be apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0209] The present technology may also be configured as follows. (1) A light-emitting device including a plurality of light-emitting elements, wherein each of the light-emitting elements has: a first electrode stacked on a substrate; a light-emitting layer stacked on the first electrode; a second electrode stacked on the light-emitting layer; and a bypass portion made of a conductive film having a predetermined resistance value and provided to connect the first electrode and the second electrode. (2) The light-emitting device according to (1), wherein the conductive film is provided so as to cover side surfaces of the second electrode and the light-emitting layer. (3) The light-emitting device according to (2), wherein the light-emitting element further has a protective film stacked on the second electrode. (4) The light-emitting device according to (3), wherein the conductive film is provided so as to cover at least a portion of a side surface of the protective film. (5) The light-emitting device according to (4), wherein the conductive film is provided so as to cover at least a portion of an upper surface of the protective film. (6) The light-emitting device according to any one of (3) to (5), wherein the conductive film is provided so as to cover at least a portion of an upper surface of the first electrode. (7) The light-emitting device according to any one of (3) to (5), wherein the conductive film is provided so as to cover at least a part of the upper surface of the substrate. (8) The light-emitting device according to any one of (3) to (7), wherein, in a plan view of the light-emitting element, the protective film has an opening exposing a center of the second electrode, at least a part of an inner wall of the opening is covered with wiring, and the wiring electrically connects the second electrodes of adjacent light-emitting elements. (9) The light-emitting device according to any one of (3) to (7), wherein the light-emitting layers of adjacent light-emitting elements are connected by a first connection portion, and the second electrodes of adjacent light-emitting elements are connected by a second connection portion. (10) The light-emitting device according to (1), wherein each light-emitting layer emits at least one light of white light, red light, green light, and blue light, and each bypass portion has a different resistance value depending on the color of light emitted by the corresponding light-emitting layer.(11) The light-emitting device according to (10) above, wherein the resistance value of the bypass section corresponding to the light-emitting layer emitting the green light is lower than the resistance value of the bypass section corresponding to the light-emitting layer emitting the red light and the resistance value of the bypass section corresponding to the light-emitting layer emitting the blue light. (12) The light-emitting device according to (10) or (11) above, wherein each of the bypass sections is made of the conductive film having a width that varies depending on the color of light emitted by the corresponding light-emitting layer. (13) The light-emitting device according to any one of (10) to (12) above, wherein each of the bypass sections is made of the conductive film having a thickness that varies depending on the color of light emitted by the corresponding light-emitting layer. (14) The light-emitting device according to any one of (1) to (13) above, wherein the conductive film is made of a metal film, a transparent oxide, or an organic material. (15) The light-emitting device according to (14) above, wherein the conductive film contains at least one of C, Al, Au, In, Ag, Ti, Mg, and Cu. (16) The light-emitting device according to any one of (1) to (15) above, wherein the light-emitting layer is made of a phosphorescent material. (17) The light-emitting device according to any one of (1) to (15) above, wherein the light-emitting layer is made of a fluorescent material. (18) An electronic device incorporating a light-emitting device having a plurality of light-emitting elements, wherein each of the light-emitting elements has: a first electrode stacked on a substrate, a light-emitting layer stacked on the first electrode, a second electrode stacked on the light-emitting layer, and a bypass section made of a conductive film provided to electrically connect the first electrode and the second electrode.

[0210] REFERENCE SIGNS LIST 10 display device 20, 20a pixel 30 pixel array section 31 scanning line 32, 33 driving line 34 signal line 40 write scanning section 50, 60 driving scanning section 70 signal output section 80 display panel 100, 100B, 100G, 100R light emitting element 102 semiconductor substrate 110 first electrode 112 light emitting layer 114 second electrode 120 bypass section 130, 132, 134 protective film 140, 170 wiring 150 opening 160 inter-pixel insulating film 172 via 180, 182 mask

Claims

1. A light-emitting device comprising a plurality of light-emitting elements, each of which has: a first electrode laminated on a substrate; a light-emitting layer laminated on the first electrode; a second electrode laminated on the light-emitting layer; and a bypass section made of a conductive film having a predetermined resistance value and provided to connect the first electrode and the second electrode.

2. The light-emitting device according to claim 1, wherein the conductive film is provided so as to cover side surfaces of the second electrode and the light-emitting layer.

3. The light emitting device according to claim 2, wherein the light emitting element further has a protective film laminated on the second electrode.

4. The light emitting device according to claim 3, wherein the conductive film is provided so as to cover at least a part of the side surface of the protective film.

5. The light-emitting device according to claim 4, wherein the conductive film is provided so as to cover at least a portion of the upper surface of the protective film.

6. The light-emitting device according to claim 3, wherein the conductive film is provided so as to cover at least a portion of the upper surface of the first electrode.

7. The light-emitting device according to claim 3, wherein the conductive film is provided so as to cover at least a portion of the upper surface of the substrate.

8. The light-emitting device according to claim 3, wherein, in a plan view of the light-emitting element, the protective film has an opening that exposes the center of the second electrode, at least a portion of the inner wall of the opening is covered with wiring, and the wiring electrically connects the second electrodes of adjacent light-emitting elements.

9. The light emitting device according to claim 3, wherein the light emitting layers of adjacent light emitting elements are connected by a first connection portion, and the second electrodes of adjacent light emitting elements are connected by a second connection portion.

10. The light emitting device according to claim 1, wherein each of the light emitting layers emits at least one of white light, red light, green light, and blue light, and each of the bypass sections has a different resistance value depending on the color of light emitted by the corresponding light emitting layer.

11. The light emitting device according to claim 10, wherein the resistance value of the bypass section corresponding to the light emitting layer that emits the green light is lower than the resistance value of the bypass section corresponding to the light emitting layer that emits the red light and the resistance value of the bypass section corresponding to the light emitting layer that emits the blue light.

12. The light emitting device according to claim 10, wherein each of the bypass sections is made of the conductive film having a width that varies depending on the color of light emitted by the corresponding light emitting layer.

13. The light emitting device according to claim 10, wherein each of the bypass sections is made of the conductive film having a thickness that varies depending on the color of light emitted by the corresponding light emitting layer.

14. The light-emitting device according to claim 1, wherein the conductive film is made of a metal film, a transparent oxide, or an organic material.

15. The light emitting device according to claim 14, wherein the conductive film contains at least one of C, Al, Au, In, Ag, Ti, Mg, and Cu.

16. The light emitting device of claim 1, wherein the light emitting layer is made of a phosphorescent material.

17. The light emitting device according to claim 1, wherein the light emitting layer is made of a fluorescent material.

18. An electronic device equipped with a light-emitting device having a plurality of light-emitting elements, each of the light-emitting elements having: a first electrode stacked on a substrate; a light-emitting layer stacked on the first electrode; a second electrode stacked on the light-emitting layer; and a bypass section made of a conductive film provided to connect the first electrode and the second electrode.

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