Method for integrating and / or processing at least one substrate, and substrate stack

Abstract

The invention relates to a method for integrating and / or processing at least one substrate, wherein a process substrate (1) to be processed is connected to a carrier substrate (2) and the process substrate (1) is processed after connection. In addition to the processing of the process substrate (1), the carrier substrate (2) is also processed by structuring and a carrier structure (3) is thereby formed. The invention further relates to a substrate stack (10) comprising a carrier substrate (2) and a processed process substrate (1) connected to the carrier substrate (2). A carrier structure (3) is formed from the carrier substrate (2) by way of structuring.

Description

[0001] Method for integrating and / or processing at least one substrate and substrate stack

[0002] The invention relates to a method for integrating and / or processing at least one substrate, wherein a process substrate to be processed is connected to a carrier substrate and the process substrate is processed after the connection. Furthermore, the invention relates to a substrate stack, wherein the substrate stack has a carrier substrate and a process substrate connected to and processed with the carrier substrate.

[0003] Glass plays a crucial role in a wide range of technological fields, both in macro- and microtechnology as well as at their interfaces. In particular, at the interfaces between these areas and in the field of microtechnology, the use of glass has increasingly proven to be essential. The unique combination of its optical, electrical, chemical, and mechanical properties is of decisive importance for the implementation of highly precise and miniaturized components and systems. For example, the transparency of glass enables not only optical inspections and measurements but also the integration of optical components into microsystems. In addition, glass is characterized by its chemical resistance, biocompatibility, and electrical insulating properties.

[0004] Due to these properties, glass is excellently suited, for example, to cost-efficiently replace silicon not only as a carrier material but also as a directly structured bulk material. This opens up a wide range of application possibilities, ranging from micro- and nanoelectronics via microelectromechanical systems (MEMS) to microfluidics and use in system packaging. However, a prerequisite for these diverse applications is the availability of a glass processing method by means of which the generation of precise structures of very small dimensions in the glass and thus microprocessing of the glass with preferably high structural freedom in combination with short processing times is enabled.

[0005] Such a method consists of laser-induced deep etching (engl. Light Induced Deep Etching, LIDE) and is known, for example, from WO 2014 / 161 534 A2 and WO 2016 / 041 544 A1. Here, a transparent material, in particular glass, is modified by means of a laser pulse or a pulse sequence over an elongated region along the beam axis, such that in a subsequent wet chemical etching bath the modification is in turn selectively etched. The modification often takes place over the entire thickness of the transparent material, for example over the entire thickness of a glass plate.

[0006] The handling of especially thin glass substrates represents a significant challenge here, particularly during or after their processing. Due to their low thickness, such glass substrates can easily break, which complicates their production, inspection and integration into complex systems.

[0007] Regarding the handling of substrates before and / or during a processing, approaches according to the prior art are already known.

[0008] DE 10320 375 B3 discloses a method for temporarily fixing two substrates, namely a process wafer and a carrier wafer, where the carrier wafer usually consists of glass. First, a separation layer is applied to the sides of the two wafers to be joined together, and then the coated sides of the wafers are connected with an adhesive. The separation layers consist of substances that have high resistance to certain chemicals used in subsequent process steps, but also have good and residue-free solubility in a defined solvent. The process wafer of the wafer stack thus formed is then thinned through grinding, lapping and etching processes. After thinning, the wafers are separated residue-free by attacking only the two separation layers with the solvent during wet chemical treatment.

[0009] WO 2016 / 101 128 A1 similarly discloses a stack comprising a thin glass substrate and a carrier substrate temporarily bonded to the glass substrate. The bond is established via an intermediate layer, particularly a soft one, provided between the substrates, such that a very flat surface of the thin glass substrate is ensured even when dust or other particles are entrapped. The intermediate layer has adhesive layers on its sides facing the substrates, with the adhesive layer facing the carrier substrate being relatively thick. The substrates are separated by cutting the thick adhesive layer using a cutting tool, and the portion of the intermediate layer remaining on the glass substrate is then peeled off the glass substrate under the action of force.

[0010] WO 2014 / 201665 A1 also describes a stack consisting of a thin glass substrate and a carrier substrate temporarily bonded to the glass substrate, wherein the glass substrate is bonded to the carrier substrate without using an intermediate layer by an electrostatic adhesion process with the aid of external pressure. The pressure is exerted continuously or stepwise during the adhesion process using a tool with a curved surface, such as a roller, so that the stack has no bubbles or inclusions at the bonding site. To separate the substrates, which is carried out after depositing a layer on the glass substrate, a tape is attached to a corner of the thin glass substrate and the thin-walled glass substrate is slowly peeled off the carrier substrate.During this process, an ionizer is directed at the bonding site to neutralize the electrostatic charges and thus facilitate the release process.

[0011] However, in addition to thin gas substrates for processing, thicker glass substrates are regularly bonded to carrier substrates in order to enable defect-free processing. In this context, DE 10 2014 106 823 A1 shows a method for producing microcomponents, in which openings are first introduced into a glass substrate provided with an etch resist by etching. In one embodiment, the openings initially exist as recesses and are thus only partially etched through the thickness of the glass substrate. To provide through openings, the etched glass substrate with the recesses formed therein is releasably bonded to a carrier substrate, e.g. formed as a glass wafer, with the side of the glass substrate having the recesses facing the carrier substrate. The recesses are thus covered and closed by the carrier substrate to form cavities.The glass substrate having recesses is then thinned until through openings are formed from the recesses. After further processing of the glass substrate, the stack of glass substrate and carrier substrate is connected to a semiconductor substrate, for example made of silicon, and then the carrier substrate is removed. Subsequently, further processing is contemplated. Different bonding processes can be applied for the releasable connection of the glass substrate to the carrier substrate. One possibility is to provide the carrier substrate with a UV-curable resist layer, for example an acrylic layer. The side of the glass substrate facing the carrier substrate is also provided with a separation layer, e.g. a photo-thermal conversion layer. Subsequently, the glass substrate with the separation layer is placed on the resist layer and the resist layer is cured by UV radiation.Dies creates a temporary connection between the glass substrate and the carrier substrate. To detach the glass substrate from the carrier wafer, the separation layer can be heated by means of a laser, which releases the glass substrate from the separation layer. Alternatively, double-sided adhesive tapes can be used to temporarily connect the glass substrate to the carrier substrate.

[0012] However, the aforementioned solution approaches have the disadvantage that during the processing of the glass substrates, there is little process control, especially in processes that also affect the side of the glass substrate connected to the carrier substrate. In addition, the release of the substrates can lead to defects in the glass substrate. These defects can be caused, for example, by the mechanical effects during the release itself and / or by the stresses introduced into the glass substrate during processing. In addition, the carrier substrates must be removed from the glass substrate again in order to be able to fulfill the intended function of the processed glass substrates.

[0013] Furthermore, a method for providing a semiconductor layer arrangement on a substrate emerges from US 2022 / 0009771 A1. Here, a semiconductor layer arrangement with a functional layer is first provided on a semiconductor substrate. Subsequently, this semiconductor layer arrangement is fixed to a glass substrate such that the functional layer is arranged between the glass substrate and the semiconductor substrate. Finally, the semiconductor substrate is at least partially removed such that the glass substrate replaces the semiconductor substrate as the substrate of the semiconductor layer arrangement.

[0014] In this context, the invention aims to provide a method of the type mentioned above, in which there is improved process control and the occurrence of defects in the process substrate is reduced. Furthermore, the invention aims to provide a substrate stack such that a contemplated function of the process substrate can also be fulfilled without detaching the carrier substrate. This object is achieved according to the invention by a method according to the features of claim 1 and a substrate stack according to the features of claim 10. Further refinements of the invention can be found in the respective dependent claims.

[0015] According to the invention, a method for integrating and / or processing at least one substrate is thus provided, in which a process substrate to be processed is connected to a carrier substrate and the process substrate is processed, wherein at least part of the processing is always carried out after the connection. According to the invention, within the scope of the method, in addition to processing the process substrate, the carrier substrate is also processed - before and / or after the connection - by structuring and thereby a carrier structure is formed.

[0016] Basically, connecting the process substrate to the carrier substrate offers the advantages that, in particular during processing, the carrier substrate or a substrate stack consisting of the carrier substrate and the process substrate has higher mechanical load-bearing capacity and, as a result, higher fracture toughness. This is especially the case when the process substrate has a thickness that is small to extremely small, especially in relation to the carrier substrate, so that a thin to very thin process substrate is present. The transport properties can also be improved.

[0017] The structuring of the carrier substrate additionally has the advantage that increased process control is given, since the structuring can enable direct access to the side of the process substrate connected to the carrier substrate. For this purpose and also in general, the carrier substrate is preferably structured over its entire thickness, such that openings and / or through-holes are formed by removal of material in structured areas of the carrier substrate. Furthermore, there is also the possibility that the carrier substrate can remain on the process substrate, since the function of the process substrate is not affected in sections of the process substrate that coincide with the structuring of the carrier substrate. This has the further advantage that it is not necessary to release the carrier substrate and thus the occurrence of defects of the process substrate caused particularly by the release is reduced.

[0018] The thickness of the carrier substrate and / or the process substrate is hereby selected in an application-specific manner, in particular adapted to a type of processing and / or structuring, such that an optimal stability and structural integrity of the process substrate and / or the substrate stack are ensured. However, the thickness of the carrier substrate is preferably higher, particularly preferably significantly higher, than the thickness of the process substrate. However, a thickness of the carrier substrate that is lower than the thickness of the process substrate is also conceivable depending on the specific application.

[0019] Generally, both the carrier substrate and the process substrate can be made of any material, but in particular of a material that is regularly used in microtechnology, such as, for example, silicon or ceramic. There is also the possibility that the materials of the carrier substrate and the process substrate differ. However, the carrier substrate and the process substrate preferably consist of the same material, preferably glass in this case.

[0020] In an advantageous refinement of the invention, the processing and / or structuring of the process substrate and / or the processing and / or structuring of the carrier substrate includes modifying at least regions of the material of the process substrate and / or the carrier substrate. The modification of the regions of the material of the process substrate and / or the carrier substrate can take place before and / or after the connection of the process substrate and the carrier substrate. The process substrate can also be modified over its entire surface or a substantial surface, although the modification is preferably carried out only in regions of the process substrate. The modification itself takes place as a result of the input of energy into the material. The energy is in particular radiation energy and preferably laser energy of a laser beam.However, it should be noted in this context that during the modification - essentially - no material is removed. Since no material is removed due to the energy input, any stresses introduced into the process substrate can be profitably minimized or even avoided, which in turn reduces the occurrence of defects.

[0021] It is hereby preferred that each modified region is generated by at least one laser pulse. In order to generate modified regions at several, for example distinguishable positions on the substrates, be it the process substrate and / or the carrier substrate, the laser beam or the focus region of the laser beam is moved over the substrates by deflection between the laser pulses. In this way, modified regions can be generated in the substrates which are either not connected to each other or can be contiguous and also overlapping. By generating several contiguous modified regions, structures with a high degree of geometric freedom can thus be formed in the substrates starting from a multiplicity of these regions.Generally, but particularly in the context of the aforementioned further processing, it is considered advantageous if the machining and / or structuring involves a selective removal, particularly mainly of the modified material of the process substrate and / or of the carrier substrate. The removal is carried out accordingly after the modification of areas of the material, preferably by the action of an etching medium on the material. The removal of the material in the modified areas thus occurs exclusively as a result of the etching effect of the etching medium and, as already explained above, not as a direct result of the input of energy, particularly the laser energy of the laser beam, which in turn contributes to minimizing or even avoiding the introduction of stresses into the material.Although the etching rate of the modified material in the areas is several orders of magnitude higher than that of an unmodified material, the substrates can additionally be provided with a masking, in particular an etch mask, preferably made of a structured photoresist, in which the modified areas to be etched are exposed.

[0022] In a promising embodiment of the invention, it is further provided that the process substrate and the carrier substrate are processed successively, in particular structured. The successive processing and in particular preferred structuring of the process substrate and the carrier substrate advantageously enables the selection and / or adaptation of the processing and / or structuring method used for the respective substrate, i.e., the process substrate and / or the carrier substrate, and thus, if necessary, to meet existing specific requirements. In this context, for example, a structuring of the carrier substrate via a mechanical process, such as diamond cutting, would be conceivable. The process wafer, on the other hand, could be processed such that a functional layer is applied by means of a deposition process.Similar processing and / or structuring methods for the respective substrate are equally conceivable, whereby, for example, adapted process parameters are applied.

[0023] Such an adaptation of process parameters can also be realized if, as envisaged in a further embodiment of the invention, the process substrate and the carrier substrate are each modified successively and / or modified material of the process substrate and the carrier substrate is each removed successively. In this way, process control can be further enhanced. Successive processing and / or structuring or successive modification and / or removal also has the advantage that this can be carried out by means of a device which is only set up for one-sided processing. This reduces the complexity and the costs of such a device.

[0024] In another embodiment of the invention, it is also provided that the process substrate and the carrier substrate are each modified simultaneously and / or modified material of the process substrate and the carrier substrate is each removed simultaneously. This advantageously reduces the process time required for modification and / or removal.

[0025] In the context of the above-described embodiments of the invention, a combined processing is also possible. For example, the process substrate and the carrier substrate can each be modified successively, while the modified material of the process substrate and the carrier substrate is removed simultaneously. In a correspondingly different way, the process substrate and the carrier substrate can each be modified simultaneously, while the modified material of the process substrate and the carrier substrate is removed successively.

[0026] Furthermore, it should be explained that the processing and / or structuring, respectively the modification and / or removal, is only carried out when the process substrate and the carrier substrate are already connected to each other.

[0027] In a variant of the invention, on the other hand, it is contemplated that the carrier substrate is only modified and / or fully structured before being connected to the process substrate. In this way, it is possible to avoid exposing the process substrate to the processes and the means used therein for processing the carrier substrate. In addition, exposure to the process products generated during processing is also prevented.

[0028] In this context, it should be noted again that according to the present invention, the processing of the process substrate always takes place only after its connection to the carrier substrate. For connecting the process substrate and the carrier substrate, there are various possibilities, and the connection can be formed either permanently or temporarily.

[0029] Thus, an embodiment of the invention includes that the connection is carried out by the action of energy on an interface and / or a boundary region of the carrier substrate and the process substrate. In particular, by creating a connection zone between the carrier substrate and the process substrate, a permanent connection is achieved that cannot be detachably removed without destruction. This basically has the advantage that no additional means, in particular intermediate layers such as adhesive layers, are required for the connection. The energy is in particular radiation energy and preferably laser energy of a laser beam. The energy can be provided by the same energy source through which the energy for modifying the material of the carrier substrate and / or the process substrate is also provided. Particularly preferably, the connection is carried out by laser welding within the scope of this embodiment.Consequently, the laser energy that acts via a laser beam of a laser source on the interface between the carrier substrate and the process substrate is preferably provided via the same laser source via which the laser energy used for modification is also introduced into the carrier substrate and / or the process substrate. The connection zone generated between the carrier substrate and the process substrate is regularly transparent, such that a substrate stack composed of the carrier substrate and the process substrate is also formed to be transparent.

[0030] In another, yet equally advantageous embodiment of the invention, at least one connecting intermediate layer is applied to at least one of the mutually adjacent sides of the carrier substrate and the process substrate before connecting the carrier substrate and the process substrate. Such changes in the properties of the carrier substrate and the process substrate can be avoided, as may occur, for example, when connecting by the action of energy on the substrates. Generally, but particularly in connection with the above embodiment of the invention, it is provided that the connection is carried out via the intermediate layer or intermediate layers. On the one hand, an intermediate layer can, for example, be an adhesive layer, particularly having a thickness depending on the adhesive used, wherein the adhesive layer is particularly applied by screen printing, adhesive dispensing, by spraying, such as, for exampleIt can be applied by spraying, spin coating or simply manually. As examples of adhesives that can be used, one-component adhesives or two-component adhesives such as epoxy resins may be mentioned here. However, photoresists can also be considered as adhesives. The curing of an adhesive layer can also be carried out by the action of UV radiation, thermal energy and / or a process gas such as oxygen, respectively chemically, e.g., radically. Furthermore, it is possible that an intermediate layer is an intermediate layer designed for anodic bonding. Possible layer materials for such an intermediate layer designed for anodic bonding are silicon or silicon nitride, although different layer materials are also conceivable.Another intermediate layer can be formed, for example, as an adhesion promoter layer, which is applied to at least one of the sides of the carrier substrate and the process substrate that are adjacent to each other for connection. It is conceivable that an adhesion promoter layer is first applied to both sides and then at least one further intermediate layer is applied to at least one of these adhesion promoter layers. Furthermore, it should be stated that such an intermediate layer can be applied accordingly via chemical or physical deposition processes such as CVD, PVD, ALD or comparable processes. In principle, depending on the deposition process, thicknesses of an intermediate layer between 1 nanometer and 3 micrometers are achievable. Specifically, the thickness of a single intermediate layer, e.g.an intermediate layer or an adhesion promoter layer designed for anodic bonding, in particular less than 1 micrometer, preferably at most 300 nanometers and / or less than 300 nanometers. A particularly preferred intermediate layer is designed to have a thickness between 150 nanometers and 200 nanometers. Depending on the design of the intermediate layer, it can be transparent or opaque, so that a substrate stack of carrier substrate and process substrate also has a transparent or opaque design.

[0031] As explained above, the connection of the process substrate and the carrier substrate can be carried out by anodic bonding using at least one intermediate layer. The following process parameters can be used for anodic bonding:

[0032] In addition to the anodic bonding mentioned above, it is also possible to perform the connection of the process substrate and the carrier substrate by fusion bonding, also known as direct bonding, where the connection is made without an intermediate layer. Such fusion bonding can be carried out using the following process parameters:

[0033] In a further development of the invention, which is also considered to be profitable, the carrier substrate forming the carrier structure remains permanently on the process substrate after structuring. By avoiding removing the carrier substrate again after processing the process substrate, the occurrence of defects in the process substrate can be advantageously reduced. However, the intended function of the process substrate can also be achieved without detachment due to the structuring of the carrier substrate. The carrier structure formed from the carrier substrate, for example a frame, also gives the process substrate a higher mechanical load-bearing capacity and stability.

[0034] According to the invention, a substrate stack is also provided, which is in particular produced by the method described above. The substrate stack has a carrier substrate and a processed, in particular structured, process substrate connected to the carrier substrate. According to the invention, a carrier structure is formed from the carrier substrate by structuring. As already explained in connection with the method, this configuration results in increased mechanical load-bearing capacity of the process substrate and of the substrate stack as a whole, which leads to increased fracture strength. Thereby, the transport properties of the substrate stack are improved. Furthermore, the occurrence of defects in the process substrate and in the substrate stack is advantageously reduced. However, the intended function of the process substrate can also be achieved without re-dissolving due to the structuring of the carrier substrate.The carrier substrate is preferably structured over its entire thickness, such that openings and / or perforations are formed in the structured areas of the carrier substrate. In a further development of the invention, the substrate stack also has a connection zone, which is formed at the interface or the boundary region between the carrier substrate and the process substrate. Further developing this, the connection zone consists at least of the materials of the process substrate and the carrier substrate. Thereby, an extremely reliable and indestructible, no longer detachable connection of the carrier substrate and the process substrate is ensured. Due to the formation of the connection zone from the materials of the carrier substrate, process substrate and / or any intermediate layer, the properties of these substrates are also not or only slightly influenced.

[0035] The invention allows for various embodiments. To further clarify its basic principle, several of them are shown in the drawing and will be described below. This shows in

[0036] Fig. 1 an embodiment of the method with a carrier substrate structured before connection;

[0037] Fig. 2 an embodiment of the method with a modified and removed carrier substrate before connection;

[0038] Fig. 3 an embodiment of the method with a modified carrier substrate before connection and substrates removed simultaneously after connection;

[0039] Fig. 4 an embodiment of the method with substrates modified and removed successively after connection;

[0040] Fig. 5 an embodiment of the method with substrates modified and removed simultaneously after connection;

[0041] Fig. 6 shows an embodiment of an intermediate layer designed for anodic bonding;

[0042] Fig. 7 shows an embodiment of an intermediate layer formed as an adhesive layer;

[0043] Fig. 8 shows an embodiment of a substrate stack with a connection zone.

[0044] Figures 1 to 5 each show embodiments of the method for processing the process substrate 1 and the carrier substrate 2 and their integration into the substrate stack 10. In each respective embodiment, the process substrate 1 is connected to the carrier substrate 2 and the process substrate 1 is processed after the connection. In addition to processing the process substrate 1, the carrier substrate 2 is also processed by structuring, thereby forming the carrier structure 3. The carrier structure 3 formed from the carrier substrate 2 remains permanently on the process substrate 1 after structuring, such that the substrate stack 10 is formed.Before connecting the carrier substrate 2 and the process substrate 1, in each of the embodiments of the method, moreover, on one of the mutually adjacent sides 6, 7 of the carrier substrate 2 and the process substrate 1, here always the side 7 of the carrier substrate 2, the connecting intermediate layer 8 is applied and then the connection is carried out via this intermediate layer 8.

[0045] Specifically, FIG. 1 depicts a basic configuration of the method, wherein the carrier substrate 2, which is initially untreated in process step a), is structured over its entire thickness 12 in process step b), such that the carrier substrate 2 has completely through-going openings 13, and thereby, upon completion of process step b), the carrier structure 3 is formed. The thickness 12 of the carrier substrate 2 is chosen to be significantly higher than the thickness 11 of the process substrate 1, so as to ensure optimal stability and structural integrity of the process substrate 1 and the substrate stack 10.Subsequently, following process step b), in process step c) the intermediate layer 8 is applied to side 7 of the structured carrier substrate 2. In the subsequent process step d), the process substrate 1 is brought into contact with the carrier substrate 2 with its side 6 and then connected to the carrier substrate 2 via the intermediate layer 8. Subsequently, the process substrate 1 is structured in regions 4 such that openings 14 are present in the process substrate and these are aligned with the openings 13 in the carrier substrate 2. Thus, the process substrate 1 and the carrier substrate 2 are structured successively within the context of this embodiment of the method.

[0046] Figure 2 further shows a design form of the method, in which the processing and integration lead to the formation of membranes 15 in the substrate stack 10. For this purpose, the material of the carrier substrate 2, which is unstructured in process step a), is modified in regions 4 in process step b) by introducing energy, and no material removal takes place during the modification. The modified material of the carrier substrate 2 is then selectively removed in the subsequent process step c), so that breakthrough openings 13 of the carrier substrate 2 are formed in regions 4. In the following process step d), the intermediate layer 8 is applied to the carrier substrate 2, here specifically to side 7.The subsequent process step e) involves connecting the process substrate 1 to the carrier substrate 2, whereupon the process substrate 1 is processed over its entire surface in process step f) and in particular is thinned, such that the regions 4 of the process substrate 1 covering the openings 15 form membranes 15.

[0047] Figure 3 also shows an embodiment of the method, in which, starting again from the carrier substrate 2 which is unstructured in process step a), in process step b) the regions 4 of the material of the carrier substrate 2 are modified by introducing energy into the material of the regions 4. The material of the carrier substrate 2 in the regions 4 is also not removed initially directly afterwards, but in process step c) first the intermediate layer 8 is applied to the carrier substrate 2, here specifically to side 7, and then in process step d) the process substrate 1 is connected to the carrier substrate 2 via the intermediate layer 8. In the following process step e), then the material of the process substrate 1 in the regions 4 of the process substrate 1 is modified by again introducing energy into the material of the regions 4.Thus, the material of the process substrate 1 and the carrier substrate 2 is modified successively in process steps b) and e), respectively, whereas the modified material of the process substrate 1 and the carrier substrate 2 is selectively removed simultaneously in process step f), such that the openings 13 and 14 are formed in the carrier substrate 2 and in the process substrate 1.

[0048] In addition, as set forth in the embodiments of FIGS. 1 to 3, the carrier substrate 2 is modified and / or structured before being connected to the process substrate 1. In the illustrations of the methods according to FIGS. 4 and 5, however, the process substrate 1 and the carrier substrate 2 are modified and / or structured only after being connected.

[0049] Thus, FIGS. 4 and 5 again show, starting from the unstructured carrier substrate 2 present in process step a), the application of the connecting intermediate layer 8 to side 7 of the carrier substrate 2 in process step b) and the subsequent connection of the untreated process substrate 1 to the carrier substrate 2.

[0050] The embodiments of the methods of FIGS. 4 and 5 now differ in that modifying the material of regions 4 of carrier substrate 2 and process substrate 1 in the embodiment according to FIG. 4 is done successively, and in the embodiment of FIG. 5 it is done simultaneously. This is shown on the one hand in process steps d) and e) of FIG. 4 and on the other hand in process step d) of FIG. 5. In both embodiments, however, the selective removal of the modified material of regions 4 of process substrate 1 and carrier substrate 2 is done simultaneously in process step f) of FIG. 4 and in process step e) of FIG. 5. In this way, openings 13 and 14 in carrier substrate 2 and process substrate 1 are formed again.

[0051] The selective removal of the material of regions 4 is done in FIGS. 2 to 5 by the action of an etching medium on the material.

[0052] Furthermore, FIGS. 6 and 7 show configurations of the intermediate layer 8, wherein the intermediate layer 8 of FIG. 6 is configured as an intermediate layer 8 for anodic bonding, for example made of silicon or silicon nitride. In contrast, the intermediate layer 8 of FIG. 7 is an adhesive layer.

[0053] FIG. 8 further depicts the result of connecting the process substrate 1 to the carrier substrate 2 in a manner different from the embodiments of the previous figures. Here, the connection is not made via the intermediate layer 8 shown, for example, also in FIGS. 6 and 7, but by applying energy to an interface 5 between the carrier substrate 2 and the process substrate 1, for example by laser beam welding. This results in the substrate stack 10 having a connection zone 9 after connection, which is formed at the interface 5 between the carrier substrate 2 and the process substrate 1.

[0054] Reference List

[0055] Process Substrate

[0056] Carrier Substrate

[0057] Carrier Structure

[0058] Region

[0059] Boundary Region

[0060] Side

[0061] Side

[0062] Interlayer

[0063] Connection Zone

[0064] Substrate Stack

[0065] Thickness

[0066] Thickness

[0067] Opening

[0068] Opening

[0069] Membrane

Claims

PATENT CLAIMS E 1. Method for the integration and / or processing of at least one substrate, wherein a process substrate (1) to be processed is connected to a carrier substrate (2) and the process substrate (1) is processed, wherein at least part of the processing is carried out after the connection, characterized in that in addition to the processing of the process substrate (1), the carrier substrate (2) is also processed by structuring and thereby forms a carrier structure (3).

2. Method according to claim 1, characterized in that the processing and / or structuring of the process substrate (1) and / or the processing and / or structuring of the carrier substrate (2) comprises modifying at least regions (4) of the material of the process substrate (1) and / or of the carrier substrate (2) as a result of an introduction of energy into the material, wherein no removal of the material takes place during the modification.

3. Method according to claim 1 or 2, characterized in that the processing and / or structuring comprises a selective removal of the modified material of the process substrate (1) and / or the carrier substrate (2), wherein the removal of the modified material of the process substrate (1) takes place exclusively after the process substrate (1) and the carrier substrate (2) have been joined.

4. Method according to at least one of the preceding claims, characterized in that the process substrate (1) and the carrier substrate (2) are processed one after the other, in particular structured.

5. Method according to at least one of the preceding claims, characterized in that the material of the process substrate (1) and the carrier substrate (2) is each is modified one after the other and / or modified material of the process substrate (1) and the carrier substrate (2) is removed one after the other.

6. Method according to at least one of the preceding claims, characterized in that the material of the process substrate (1) and of the carrier substrate (2) is modified at the same time and / or modified material of the process substrate (1) and of the carrier substrate (2) is removed at the same time.

7. Method according to at least one of the preceding claims, characterized in that the carrier substrate (2) is modified and / or structured before being connected to the process substrate (1).

8. Method according to at least one of the preceding claims, characterized in that the bonding is carried out by the action of energy on a boundary region (5) of the carrier substrate (2) and the process substrate (1).

8. Method according to at least one of the preceding claims, characterized in that before the carrier substrate (2) and the process substrate (1) are joined, at least one intermediate layer (8) serving for the joining is applied to at least one of the sides (6, 7) of the carrier substrate (2) and the process substrate (1) which are adjacent to one another for joining, and the joining is carried out via this intermediate layer (8) or intermediate layers (8).

9. Method according to at least one of the preceding claims, characterized in that the carrier substrate (2) forming the carrier structure (3) remains permanently on the process substrate after structuring.

10. Substrate stack (10), in particular produced by the method according to at least one of the preceding claims, wherein the substrate stack (10) comprises a carrier substrate (2) and a processed process substrate (1) connected to the carrier substrate (2), characterized in that by structuring from the carrier substrate (2) a Support structure (3) is formed.

11. Substrate stack (10) according to claim 10, characterized in that the substrate stack (10) has a connecting zone (9) which is formed at the boundary region (5) between the carrier substrate (2) and the process substrate (1)

Images