Bonding tape for semiconductor, method for manufacturing semiconductor chip with adhesive layer, and method for manufacturing semiconductor device

Abstract

Disclosed is a bonding tape for a semiconductor, the bonding tape comprising: a film-like adhesive; and an adhesive tape that is attached to the film-like adhesive. The film-like adhesive contains an epoxy resin and a curing agent. The epoxy resin includes an epoxy resin that is in a liquid state at 25°C, and the epoxy resin that is in a liquid state at 25°C contains a compound represented by formula (I). (In formula (I), R1 and R2 each independently represent a hydrogen atom or a glycidyl group, and l and m each represent an integer of 0 or more. In cases where R1 and R2 are hydrogen atoms, at least one of l and m is 1 or more.)

Description

Adhesive tape for semiconductors, method for manufacturing semiconductor chips with adhesive layers, and method for manufacturing semiconductor devices

[0001] The present disclosure relates to an adhesive tape for semiconductors, a method for manufacturing a semiconductor chip with an adhesive layer, and a method for manufacturing a semiconductor device.

[0002] Conventionally, wire bonding, which uses thin metal wires such as gold wires, has been widely used to connect semiconductor chips to substrates. However, in order to meet demands for higher performance, higher integration, and higher speeds for semiconductor devices, flip-chip connection (FC connection), which directly connects the semiconductor chip to the substrate by forming conductive protrusions called bumps on the semiconductor chip or substrate, is becoming more popular.

[0003] For example, with regard to the connection between a semiconductor chip and a substrate, the COB (Chip On Board) type connection method used in BGA (Ball Grid Array), CSP (Chip Size Package), etc. also falls under the FC connection method. The FC connection method is also widely used in the COC (Chip On Chip) type connection method, in which connection parts (e.g., bumps and wiring) are formed on the semiconductor chip to connect between semiconductor chips.

[0004] Recently, as one of the high-density packaging technologies, a method has been considered in which a wafer with a film-like adhesive attached (semiconductor wafer with an adhesive layer) is prepared and semiconductor chips with an adhesive layer obtained from this wafer are used. Among these, Patent Document 1 proposes an adhesive tape for semiconductors in which a backgrinding tape and an adhesive are bonded together with the aim of simplifying the process.

[0005] JP 2009-239138 A

[0006] In recent years, with the strong demand for smaller, thinner, and more functional packages, chip-stacked packages, POP (Package On Package), TSV (Through-Silicon Via), and the like, which use the above-mentioned connection methods to stack and multi-layer semiconductor chips, have begun to become widely used. These stacking and multi-layering technologies arrange semiconductor chips, etc., three-dimensionally, allowing for smaller packages compared to methods that arrange semiconductor chips, etc., two-dimensionally. Furthermore, stacking and multi-layering technologies are also effective in improving semiconductor performance, reducing noise, reducing mounting area, and saving power, and are therefore attracting attention as next-generation semiconductor wiring technologies.

[0007] When manufacturing the multi-layer stacked package, it is common to use the same stacking conditions for each layer of semiconductor chips in order to improve production efficiency. Therefore, adhesives used in manufacturing multi-layer stacked packages are required to have minimal variation in melting and curing properties so that semiconductor chips can be stacked under the same conditions. In particular, if the viscosities of the adhesives used in each layer are different, the distance (gap height) between the semiconductor chips may vary when the semiconductor chips are stacked under the same conditions, resulting in a decrease in package quality. Therefore, it is desirable to minimize the variation in viscosity between adhesives.

[0008] On the other hand, as a result of investigations by the inventors of the present disclosure, it has become clear that the viscosity of the film-like adhesive is likely to increase over time in an adhesive tape for semiconductors integrated with an adhesive tape such as backgrind tape (hereinafter referred to as an "adhesive tape-integrated adhesive tape for semiconductors"). The storage period from manufacture to use of adhesive tapes used in the manufacture of packages is not necessarily the same, and adhesive tapes manufactured at different times may be used in the manufacture of a single package. Therefore, in order to use an adhesive tape-integrated adhesive tape for semiconductors in the manufacture of a multi-layered package, it is important to suppress the above-mentioned increase in viscosity over time.

[0009] Therefore, an object of one aspect of the present disclosure is to provide an adhesive tape for semiconductors that is an integrated adhesive tape and in which the adhesive is less likely to increase in viscosity over time.

[0010] The inventors of the present disclosure conducted extensive research to clarify the cause of the increase in adhesive viscosity in adhesive tape-integrated semiconductor adhesive tapes, and as a result, they confirmed in a component analysis of the adhesive tape that the adhesive tape contains a liquid epoxy resin used in the adhesive from the viewpoint of film-forming properties, etc., and further confirmed that the amount of liquid epoxy resin in the adhesive tape changes before and after the increase in viscosity. Based on this finding, the inventors of the present disclosure conducted further research and found that by using a specific liquid epoxy resin, the increase in the amount of liquid epoxy resin in the adhesive tape can be suppressed, and as a result, the increase in adhesive viscosity can also be suppressed, leading to the present disclosure.

[0011] The present disclosure provides the following [1] to

[12] .

[0012] [1] An adhesive tape for a semiconductor, comprising a film adhesive and a pressure-sensitive adhesive tape attached to the film adhesive, wherein the film adhesive contains an epoxy resin and a curing agent, the epoxy resin contains an epoxy resin that is liquid at 25°C, and the epoxy resin that is liquid at 25°C contains a compound represented by the following formula (I): [In formula (I), R １ and R ２ each independently represents a hydrogen atom or a glycidyl group, and l and m represent an integer of 0 or more. １ and R ２ is a hydrogen atom, at least one of l and m is 1 or more.

[0013] [2] The adhesive tape for a semiconductor according to [1], wherein the epoxy resin that is liquid at 25°C has a number average molecular weight of 350 or more.

[0014] [3] The adhesive tape for a semiconductor according to [1] or [2], wherein the content of the epoxy resin that is liquid at 25°C is 1 to 30 mass% based on the total mass of the film-like adhesive.

[0015] [4] The adhesive tape for a semiconductor according to any one of [1] to [3], wherein the epoxy resin comprises an epoxy resin that is solid at 25°C.

[0016] [5] The adhesive tape for a semiconductor according to any one of [1] to [4], wherein the curing agent comprises an imidazole-based curing agent.

[0017] [6] The adhesive tape for a semiconductor according to any one of [1] to [5], wherein the film-like adhesive further contains a flux compound.

[0018] [7] The adhesive tape for a semiconductor according to any one of [1] to [6], wherein the film-like adhesive further contains a polymer component having a weight-average molecular weight of 10,000 or more.

[0019] [8] The adhesive tape for a semiconductor according to any one of [1] to [7], wherein the film-like adhesive further contains a filler.

[0020] [9] The adhesive tape for a semiconductor according to any one of [1] to [8], wherein the viscosity of the film-like adhesive at 80°C is 3000 to 10000 Pa·s.

[0021]

[10] The adhesive tape for a semiconductor according to any one of [1] to [9], wherein the adhesive layer that forms the surface of the adhesive tape that comes into contact with the film-like adhesive contains a (meth)acrylic resin.

[0022]

[11] A method for manufacturing a semiconductor chip with an adhesive layer, comprising: attaching the adhesive tape for a semiconductor according to any one of [1] to

[10] to a semiconductor wafer from the film-like adhesive side; and dicing the semiconductor wafer with the adhesive tape attached to obtain semiconductor chips with an adhesive layer.

[0023]

[12] A method for manufacturing a semiconductor device in which a plurality of semiconductor chips are stacked, comprising: placing a first semiconductor chip with an adhesive layer obtained by the method described in

[11] on a base from the adhesive layer side, and pressing the chip while heating to obtain a laminate; and placing a second semiconductor chip with an adhesive layer obtained by the method described in

[11] on the laminate from the adhesive layer side, and pressing the chip while heating.

[0024] According to one aspect of the present disclosure, it is possible to provide an adhesive tape for a semiconductor that is an integrated pressure-sensitive adhesive tape and in which the adhesive is less likely to increase in viscosity over time.

[0025] Fig. 1 is a schematic cross-sectional view showing one embodiment of an adhesive tape for a semiconductor according to the present disclosure. Fig. 2 is a process cross-sectional view showing one embodiment of a method for manufacturing a semiconductor chip with an adhesive layer according to the present disclosure. Fig. 3 is a process cross-sectional view showing one embodiment of a method for manufacturing a semiconductor chip with an adhesive layer according to the present disclosure. Fig. 4 is a process cross-sectional view showing one embodiment of a method for manufacturing a semiconductor chip with an adhesive layer according to the present disclosure. Fig. 5 is a process cross-sectional view showing one embodiment of a method for manufacturing a semiconductor device according to the present disclosure. Fig. 6 is a process cross-sectional view showing one embodiment of a method for manufacturing a semiconductor device according to the present disclosure.

[0026] In this specification, "(meth)acrylic" refers to at least one of acrylic and its corresponding methacrylic. The same applies to other similar expressions such as "(meth)acryloyl" and "(meth)acrylate." Furthermore, a numerical range indicated using "to" indicates a range that includes the numerical values ​​before and after "to" as the minimum and maximum values, respectively. Furthermore, unless specifically stated otherwise, the units of the numerical values ​​before and after "to" are the same. Furthermore, in the numerical ranges described in this specification, the upper or lower limit of the numerical range may be replaced with the value shown in the examples. Furthermore, the individually described upper and lower limits can be arbitrarily combined. Furthermore, unless otherwise specified, the materials exemplified below may be used alone or in combination of two or more. When multiple substances corresponding to each component are present in the composition, the content of each component in the composition refers to the total amount of the multiple substances present in the composition, unless otherwise specified.

[0027] Hereinafter, embodiments of the present disclosure will be described in detail, with reference to the drawings where appropriate. In the drawings, identical or corresponding parts are designated by the same reference numerals, and duplicate explanations will be omitted. Furthermore, unless otherwise specified, positional relationships such as up, down, left, and right are based on the positional relationships shown in the drawings. Furthermore, the dimensional ratios of the drawings are not limited to those shown in the drawings.

[0028] <Adhesive Tape for Semiconductor> Fig. 1 is a schematic cross-sectional view showing one embodiment of an adhesive tape for semiconductor according to the present disclosure. In this specification, "for semiconductor use" means that it is used in the manufacture of semiconductor devices. The adhesive tape for semiconductor use is used, for example, to bond a semiconductor chip to a member to be bonded (a substrate such as a wiring circuit board or another semiconductor chip) and to seal the gap between the semiconductor chip and the substrate.

[0029] 1 includes a supporting substrate 1, a film-like adhesive 2, and a pressure-sensitive adhesive tape 5. However, the supporting substrate 1 is not essential.

[0030] The adhesive tape 5 comprises an adhesive layer 3 and a substrate 4, and is attached to the film-like adhesive 2 from the adhesive layer 3 side. That is, the adhesive layer 3 forms the contact surface of the adhesive tape 5 with the film-like adhesive 2. The adhesive tape 5 is, for example, a backgrinding tape, a dicing tape, a protective tape (for example, a film that is peeled off after the film-like adhesive 2 is laminated to an adherend), etc.

[0031] The film adhesive 2 contains an epoxy resin and a curing agent. The epoxy resin includes an epoxy resin that is liquid at 25°C (hereinafter also referred to as "liquid epoxy resin"). The liquid epoxy resin includes a compound represented by the following formula (I): [In formula (I), R １ and R ２ each independently represents a hydrogen atom or a glycidyl group, and l and m represent an integer of 0 or more. １ and R ２ is a hydrogen atom, at least one of l and m is 1 or more.

[0032] Here, "liquid at 25°C" means that the viscosity at 25°C measured with an E-type viscometer is 400 Pa s or less. The number average molecular weight means a value measured using GPC (gel permeation chromatography) in terms of standard polystyrene. The unit of molecular weight is g / mol.

[0033] The adhesive tape 10 is an integrated pressure-sensitive adhesive tape, yet has the characteristic that the film-like adhesive 2 is less likely to increase in viscosity over time. The reason for this is not clear, but it is presumed as follows. First, it is presumed that the cause of the viscosity increase is that the liquid epoxy resin contained in the adhesive migrates (penetrates) into the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape over time, causing a change in the composition of the adhesive. In contrast, in the adhesive tape 10, the liquid epoxy resin contained in the film-like adhesive 2 contains a compound represented by formula (I), and therefore it is thought that migration (penetration) of the liquid epoxy resin into the pressure-sensitive adhesive layer is less likely to occur. Therefore, it is presumed that the composition of the adhesive is less likely to change, and as a result, the adhesive is less likely to increase in viscosity.

[0034] The film adhesive 2 and the adhesive tape 5 will be described in detail below.

[0035] (Film-like adhesive) The film-like adhesive 2 is made of, for example, an adhesive composition. The adhesive composition (film-like adhesive) contains an epoxy resin (hereinafter sometimes referred to as "component (a)") and a curing agent (hereinafter sometimes referred to as "component (b)"). If necessary, the adhesive composition may contain a flux compound (hereinafter sometimes referred to as "component (c)"), a polymer component having a weight-average molecular weight of 10,000 or more (hereinafter sometimes referred to as "component (d)"), and a filler (hereinafter sometimes referred to as "component (e)").

[0036] Component (a): Epoxy Resin Epoxy resins consist of compounds having two or more epoxy groups in the molecule. Component (a) contains at least a liquid epoxy resin, which contains at least a compound represented by formula (I) above. The liquid epoxy resin may contain one or more types of compounds represented by formula (I).

[0037] In formula (I), l and m may be, for example, an integer of 0 to 10. The sum of l and m may be, for example, an integer of 0 to 20.

[0038] In one embodiment, the liquid epoxy resin may contain a compound represented by the following formula (Ia) as the compound represented by formula (I). In this case, molecular motion of the liquid epoxy resin is suppressed, and the stability over time tends to be further improved.

[0039] The content of the compound represented by formula (Ia) may be 70 mass % or more, 80 mass % or more, or 90 mass % or more, based on the total mass of the liquid epoxy resin. The liquid epoxy resin may consist solely of the compound represented by formula (Ia).

[0040] In one embodiment, the liquid epoxy resin may contain a compound represented by the following formula (Ib) as the compound represented by formula (I). In this case, molecular motion of the liquid epoxy resin is suppressed, and the stability over time tends to be further improved. [In formula (Ib), p and q represent integers of 0 or more, and the sum of p and q is 1 or more.]

[0041] From the viewpoint of suppressing molecular motion of the resin, the liquid epoxy resin may contain a compound in which the sum of p and q in formula (Ib) is 1 or 2, or may contain both of these. From the same viewpoint, the liquid epoxy resin may contain, in addition to the compound in formula (Ib) in which the sum of p and q in formula (Ib) is 1 or 2, a compound in formula (Ib) in which the sum of p and q is 3 or more.

[0042] The content of the compound in formula (Ib) where the sum of p and q is 1 may be 10 to 30% by mass, 15% by mass or more, or 20% by mass or more, 25% by mass or less, or 20% by mass or less, or 15 to 25% by mass, 20 to 25% by mass, or 10 to 20% by mass, based on the total mass of the liquid epoxy resin.

[0043] The content of the compound in formula (Ib) where the sum of p and q is 2 may be 10 to 90 mass%, 30 mass% or more, or 50 mass% or more, 70 mass% or less, or 50 mass% or less, or 30 to 70 mass%, 50 to 70 mass%, or 10 to 50 mass%, based on the total mass of the liquid epoxy resin.

[0044] The content of the compound in formula (Ib) in which the sum of p and q is 3 or more may be 0 to 90 mass%, 30 mass% or more, or 50 mass% or more, 70 mass% or less, 50 mass% or less, 30 to 70 mass%, 50 to 70 mass%, or 0 to 50 mass%, based on the total mass of the liquid epoxy resin.

[0045] The liquid epoxy resin may contain compounds other than the compound represented by formula (I). However, from the viewpoint of further suppressing an increase in viscosity, the content of the compounds other than the compound represented by formula (I) may be 10% by mass or less, 5% by mass or less, or 1% by mass or less, based on the total mass of the liquid epoxy resin, or may be 0% by mass (i.e., the liquid epoxy resin consists solely of the compound represented by formula (I)).

[0046] The number average molecular weight of the liquid epoxy resin may be 350 or more (e.g., 350 to 800) from the viewpoint of achieving both the effect of suppressing viscosity increase and the desired effects of the liquid epoxy resin (improved film formability, low viscosity, improved lamination, etc.) at a high level. The number average molecular weight of the liquid epoxy resin may be 400 or more, 450 or more, or 500 or more, and may be 700 or less, 600 or less, or 500 or less, or may be 400 to 700, 450 to 600, 500 to 600, or 350 to 500. The liquid epoxy resin may contain a compound with a molecular weight of less than 350, but the lower the content of compounds with a molecular weight of less than 350, the more easily the adhesive is prevented from increasing in viscosity over time. The content of the compound having a molecular weight of 350 or more contained in the liquid epoxy resin may be 50% by mass or more, 70% by mass or more, 90% by mass or more, 95% by mass or more, 99% by mass or more, or 100% by mass based on the total mass of the liquid epoxy resin.

[0047] The epoxy equivalent of the liquid epoxy resin may be 50 to 500 g / eq, 100 to 400 g / eq, or 120 to 370 g / eq.

[0048] From the viewpoint of achieving a high level of both the effect of suppressing viscosity increase and the intended effects of the liquid epoxy resin (improved film-formability, low viscosity, improved lamination properties, etc.), the content of the liquid epoxy resin may be 1 to 30 mass %, 3 mass % or more, or 5 mass % or more, 20 mass % or less, 10 mass % or less, or 3 to 20 mass %, or 5 to 10 mass %, based on the total mass of the adhesive composition (film-like adhesive).

[0049] From the viewpoint of heat resistance after curing of the film, component (a) may contain an epoxy resin that is solid (non-liquid) at 25°C (hereinafter also referred to as "solid epoxy resin"). Here, "solid at 25°C" means that the viscosity at 25°C measured with an E-type viscometer is greater than 400 Pa s.

[0050] Examples of solid epoxy resins that can be used include bisphenol A epoxy resins, bisphenol F epoxy resins, naphthalene epoxy resins, phenol novolac epoxy resins, cresol novolac epoxy resins, phenol aralkyl epoxy resins, biphenyl epoxy resins, triphenylmethane epoxy resins, triphenolmethane epoxy resins, dicyclopentadiene epoxy resins, and various polyfunctional epoxy resins. These can be used alone or in combination of two or more.

[0051] From the viewpoint of achieving both the effect of suppressing viscosity increase and the desired effects of the liquid epoxy resin (improved film formability, low viscosity, improved lamination properties, etc.) at a high level, the content of the solid epoxy resin may be 0 to 90% by mass, 20% by mass or more, 40% by mass or more, or 60% by mass or more, 85% by mass or less, 80% by mass or less, or 20 to 85% by mass, 40 to 85% by mass, or 60 to 80% by mass, based on the total mass of component (a).

[0052] Component (b): Curing Agent Examples of component (b) include phenolic resin-based curing agents, acid anhydride-based curing agents, amine-based curing agents, imidazole-based curing agents, and phosphine-based curing agents. Among these, phenolic resin-based curing agents, acid anhydride-based curing agents, amine-based curing agents, and imidazole-based curing agents exhibit flux activity that suppresses the formation of an oxide film at the connection, so using these curing agents can improve connection reliability. Each curing agent is described below.

[0053] (i) Phenolic Resin Curing Agents The phenolic resin curing agent is not particularly limited as long as it has two or more phenolic hydroxyl groups in the molecule, and examples thereof include phenol novolac resins, cresol novolac resins, phenol aralkyl resins, cresol naphthol formaldehyde polycondensates, triphenylmethane-type polyfunctional phenolic resins, and various polyfunctional phenolic resins. These can be used alone or in combination of two or more.

[0054] (ii) Acid Anhydride Curing Agent Examples of acid anhydride curing agents that can be used include methylcyclohexanetetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic dianhydride, and ethylene glycol bisanhydrotrimellitate. These can be used alone or in combination of two or more.

[0055] (iii) Amine-Based Curing Agents As the amine-based curing agent, for example, dicyandiamide can be used.

[0056] (iv) Imidazole-Based Curing Agents Examples of imidazole-based curing agents include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, and 2,4-diamino-6 -[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and adducts of epoxy resins and imidazoles. Among these, from the viewpoint of excellent curing property, storage stability and connection reliability, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'- At least one selected from the group consisting of ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole may be used. These may be used alone or in combination of two or more. A latent curing agent obtained by microencapsulating these may also be used.

[0057] (v) Phosphine-Based Curing Agents Examples of phosphine-based curing agents include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra(4-methylphenyl)borate, and tetraphenylphosphonium(4-fluorophenyl)borate.

[0058] The phenolic resin-based curing agent, the acid anhydride-based curing agent, and the amine-based curing agent can each be used alone or in combination with two or more thereof. The imidazole-based curing agent and the phosphine-based curing agent can each be used alone or in combination with the phenolic resin-based curing agent, the acid anhydride-based curing agent, or the amine-based curing agent.

[0059] In one embodiment, from the viewpoint of further improving storage stability and making decomposition or deterioration due to moisture absorption less likely to occur, a curing agent selected from the group consisting of phenolic resin-based curing agents, amine-based curing agents, imidazole-based curing agents, and phosphine-based curing agents may be used.

[0060] In one embodiment, from the viewpoint of ease of adjusting the curing speed and from the viewpoint of realizing short-time connection for the purpose of improving productivity due to fast curing, a curing agent selected from the group consisting of phenolic resin-based curing agents, amine-based curing agents, and imidazole-based curing agents may be used. In particular, when an imidazole-based curing agent is used, the above-mentioned effect is more easily obtained.

[0061] The content of the curing agent (particularly the content of the imidazole-based curing agent) may be 0.1 to 20 parts by mass or 0.1 to 10 parts by mass per 100 parts by mass of component (a). When the content of the curing agent is 0.1 part by mass or more, curability tends to be improved, while when the content is 20 parts by mass or less, the adhesive composition does not cure before a metal bond is formed, and connection defects tend to be less likely to occur.

[0062] Component (c): Flux Compound Component (c) is a compound having flux activity, such as a compound having a carboxy group (mono- or polycarboxylic acid). As mentioned above, imidazole-based curing agents can also have flux activity, but compounds that fall under the category of imidazole-based curing agents are not considered to fall under the category of component (c). Specific examples of component (c) include dicarboxylic acids such as succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, and dodecanedioic acid, as well as compounds in which an electron-donating group is substituted at the 2-position of these dicarboxylic acids (e.g., 2-methylglutaric acid).

[0063] The content of component (c) may be 0.5 to 10 mass % or 0.5 to 5 mass % based on the total amount of the adhesive composition.

[0064] Component (d): A polymer component with a weight-average molecular weight of 10,000 or more. Component (d) contributes to improved heat resistance and film-forming properties. Component (d) is, for example, a thermoplastic resin. Examples of component (d) include phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, polyethylene resin, polyethersulfone resin, polyetherimide resin, polyvinyl acetal resin, urethane resin, and acrylic rubber. Among these, using at least one selected from the group consisting of phenoxy resin, polyimide resin, acrylic rubber, cyanate ester resin, and polycarbodiimide resin facilitates excellent heat resistance and film-forming properties, while using at least one selected from the group consisting of phenoxy resin, polyimide resin, and acrylic rubber facilitates even better heat resistance and film-forming properties. These thermoplastic resins can be used alone or as a mixture or copolymer of two or more. Note that component (d) does not include the epoxy resin (component (a)).

[0065] The weight average molecular weight of component (d) is 10,000 or more, and may be 20,000 or more or 30,000 or more from the viewpoint of further improving the heat resistance and film formability of the adhesive composition. The weight average molecular weight of component (d) may be 1,000,000 or less or 500,000 or less from the viewpoint of improving heat resistance. From the above viewpoint, the weight average molecular weight of component (d) may be 10,000 to 1,000,000, 20,000 to 500,000, or 30,000 to 500,000. In this specification, the weight average molecular weight refers to a value measured using GPC (gel permeation chromatography) in terms of standard polystyrene. An example of measurement conditions for the GPC method is shown below. Apparatus: HCl-8320GPC, UV-8320 (product name, manufactured by Tosoh Corporation), or HPLC-8020 (product name, manufactured by Tosoh Corporation) Column: TSKgel superMultiporeHZ-M x 2, or 2 pieces of GMHXL + 1 piece of G-2000XL Detector: RI or UV detector Column temperature: 25-40°C Eluent: Select a solvent that dissolves the polymer components. For example, THF (tetrahydrofuran), DMF (N,N-dimethylformamide), DMA (N,N-dimethylacetamide), NMP (N-methylpyrrolidone), or toluene. When a polar solvent is selected, the concentration of phosphoric acid may be adjusted to 0.05 to 0.1 mol / L (usually 0.06 mol / L) and the concentration of LiBr may be adjusted to 0.5 to 1.0 mol / L (usually 0.63 mol / L). Flow rate: 0.30 to 1.5 mL / min. Standard material: polystyrene.

[0066] When the adhesive composition contains the component (d), the content C of the component (d) ｄ The content C of the component (a) relative to ａ Ratio C ａ / C ｄ (mass ratio) may be 0.01 to 5, 0.05 to 3, or 0.1 to 2. ａ / C ｄ By making the ratio C 0.01 or more, better curing properties and adhesive strength can be obtained, and ａ / C ｄ By making the value 5 or less, better film formability can be obtained.

[0067] Component (e): Filler Component (e) is effective in controlling the viscosity of the adhesive composition and the physical properties of the cured product of the adhesive composition. As component (e), inorganic fillers such as insulating inorganic fillers and whiskers, and organic fillers such as resin fillers are used. Component (e) may be used alone or in combination of two or more. Since inorganic fillers and organic fillers each have advantageous effects, either one may be used depending on the application, or they may be mixed together to exhibit the functions of both.

[0068] Examples of insulating inorganic fillers include glass, silica, alumina, titanium oxide, carbon black, mica, and boron nitride. Among these, when at least one selected from the group consisting of silica, alumina, titanium oxide, and boron nitride is used, reliability is likely to be improved due to their low linear expansion characteristics, and when at least one selected from the group consisting of silica, alumina, and boron nitride is used, a film with more stable characteristics is likely to be formed.

[0069] Whiskers include, for example, aluminum borate, aluminum titanate, zinc oxide, calcium silicate, magnesium sulfate, and boron nitride.

[0070] Examples of resin fillers include fillers made of resins such as polyurethane and polyimide. Resin fillers have a lower thermal expansion coefficient than organic components (epoxy resins, curing agents, etc.), which contributes to improving connection reliability. Resin fillers also make it easier to adjust the viscosity of the adhesive composition. Resin fillers have a superior stress-relieving function compared to inorganic fillers, so resin fillers can further suppress peeling during reflow tests, etc.

[0071] In one embodiment, an insulating inorganic filler may be used from the viewpoint of insulation reliability (particularly HAST resistance).

[0072] There are no particular restrictions on the shape, particle size, or content of component (e). Component (e) may have its physical properties appropriately adjusted by surface treatment.

[0073] The content of component (e) may be 10 to 80 mass % or 15 to 60 mass % based on the total amount of the adhesive composition.

[0074] The above describes the main components that may be contained in the film-like adhesive 2, but the film-like adhesive 2 may also contain components other than those described above (other components). For example, the film-like adhesive 2 may further contain a thermosetting resin other than epoxy resin, such as a phenolic resin (except when contained as a curing agent) or an acrylic resin. However, from the standpoint of adhesiveness, the film-like adhesive 2 may contain an epoxy resin as the main thermosetting resin. From this standpoint, the content of the epoxy resin may be 80% by mass or more or 90% by mass or more based on the total amount of the thermosetting resin. The content of the epoxy resin may also be 100% by mass based on the total amount of the thermosetting resin.

[0075] The film adhesive 2 may further contain additives such as antioxidants, silane coupling agents, titanium coupling agents, leveling agents, and ion trapping agents. These may be used alone or in combination of two or more. The content of these additives may be adjusted as appropriate so that the effects of each additive are exerted.

[0076] The film-like adhesive 2 can be formed by dissolving or dispersing the adhesive composition containing the above-mentioned components in a solvent to form a varnish, applying this varnish to the supporting substrate 1, and removing the solvent by heating. This method results in a film-like adhesive with a supporting substrate, which comprises the supporting substrate 1 and the film-like adhesive 2.

[0077] As the support substrate 1, for example, a polymer film having heat resistance and solvent resistance such as polyethylene terephthalate can be used. Commercially available examples include polyethylene terephthalate films such as "A-31" manufactured by Toyobo Co., Ltd. The thickness of the support substrate 1 may be 10 to 100 μm, 30 to 75 μm, or 35 to 50 μm. When the thickness of the support substrate 1 is 10 μm or more, the support substrate 1 tends to be less likely to tear during coating, and when it is 100 μm or less, it tends to be inexpensive.

[0078] Examples of methods for applying the varnish onto the supporting substrate 1 include commonly known methods such as knife coating, roll coating, spray coating, gravure coating, bar coating, and curtain coating.

[0079] The temperature condition when removing the solvent by heating may be 70 to 150°C.

[0080] The solvent used is not particularly limited, but may be determined taking into consideration the boiling point and volatility during adhesive layer formation. For example, from the viewpoint of preventing the adhesive layer from curing during adhesive layer formation, solvents with relatively low boiling points such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, and xylene may be used. For the purpose of improving coatability, solvents with relatively high boiling points such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, and cyclohexanone may be used. These solvents may be used alone or in combination of two or more.

[0081] The thickness of the film-like adhesive 2 may be 2 to 50 μm or 5 to 20 μm. The thickness of the film-like adhesive 2 may be 5 to 16 μm from the viewpoint of suppressing resin overflow after mounting. The thickness of the film-like adhesive 2 may be 0.6 to 1.5 times, 0.7 to 1.3 times, or 0.8 to 1.2 times the height of the electrodes before connection of the semiconductor wafer. The thickness of the film-like adhesive 2 may be less than the height of the electrodes before connection of the semiconductor wafer. When the thickness of the film-like adhesive 2 is 0.6 times or more the height of the electrodes, the occurrence of voids due to unfilled adhesive can be sufficiently suppressed, further improving connection reliability. When the thickness of the film-like adhesive 2 is 1.5 times or less, the amount of adhesive extruded from the chip connection region during connection can be sufficiently suppressed, thereby suppressing the occurrence of fillets and sufficiently preventing adhesive from adhering to unnecessary areas.

[0082] The viscosity of the film-like adhesive 2 at 80°C may be 3000 to 10,000 Pa·s or 4,000 to 9,000 Pa·s. When the viscosity is within the above range, the resin melts easily during compression bonding and can flow sufficiently, making it less likely for voids to form around the electrodes and grooves and enabling more reliable contact between opposing electrodes as a preliminary step to achieving good connection. The viscosity of the film-like adhesive 2 is measured using the procedure described in the Examples.

[0083] The viscosity of the film adhesive 2 can be adjusted by, for example, selecting a high molecular weight component, selecting a filler, and adjusting the amounts of these components added.

[0084] (Adhesive Tape) The adhesive tape 5 includes an adhesive layer 3 and a substrate 4. In the following, the adhesive layer 3 will be described first, and then the substrate 4 will be described.

[0085] The pressure-sensitive adhesive layer 3 has adhesive strength at room temperature and has the necessary adhesive strength to the adherend. The pressure-sensitive adhesive layer 3 may have the property of being cured (i.e., its adhesive strength is reduced) by high-energy rays such as radiation or heat. The pressure-sensitive adhesive layer 3 may be easily peelable from the adhesive layer without the application of high-energy rays such as radiation or heat. The pressure-sensitive adhesive layer 3 may be a pressure-sensitive adhesive layer. The pressure-sensitive adhesive layer 3 can be formed using, for example, an acrylic resin, various synthetic rubbers, natural rubber, or a polyimide resin. Among these, when the pressure-sensitive adhesive layer 3 contains at least one of an acrylic resin and a methacrylic resin (hereinafter collectively referred to as "(meth)acrylic resin"), an effect of suppressing an increase in the viscosity of the adhesive over time is expected.

[0086] A pressure-sensitive adhesive layer having the property of being cured (i.e., its adhesive strength is reduced) by high-energy rays such as radiation may contain, for example, an acrylic copolymer as a main component, a crosslinking agent, and a photopolymerization initiator. These components are described below. The term "main component" refers to the component with the highest content among the compositions constituting the target layer. The content of the main component may be more than 50 parts by mass per 100 parts by mass of the composition.

[0087] The acrylic copolymer may have at least a radiation-curable carbon-carbon double bond-containing group and a hydroxyl group.

[0088] The (meth)acrylic resin as the acrylic copolymer may contain unsaturated bonds in the side chains and may itself be adhesive. Examples of such a resin include a resin having a glass transition temperature of −40° C. or lower, a hydroxyl value of 20 to 150 mg KOH / g, a chain-polymerizable functional group content of 0.3 to 1.5 mmol / g, a substantially undetectable acid value, and a weight-average molecular weight of 300,000 or higher.

[0089] The (meth)acrylic resin having the above characteristics can be obtained by synthesis using a known method. Examples of known methods include solution polymerization, suspension polymerization, emulsion polymerization, bulk polymerization, precipitation polymerization, gas phase polymerization, plasma polymerization, and supercritical polymerization. The polymerization reaction may be performed using radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, immortal polymerization, or the like, as well as ATRP or RAFT. From the viewpoints of economy, high reaction rate, ease of polymerization control, and ease of blending, such as the ability to blend the resin solution obtained by polymerization as is, a synthesis method using radical polymerization using a solution polymerization method may be used.

[0090] Here, a method for obtaining a (meth)acrylic resin by radical polymerization using a solution polymerization method will be described in detail as an example.

[0091] The monomer used in synthesizing the (meth)acrylic resin is not particularly limited as long as it has one (meth)acrylic group in one molecule. Examples of the monomer include methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, lauryl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, stearyl (meth)acrylate, and behenyl (meth)acrylate. aliphatic (meth)acrylates such as acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl)succinate; alicyclic (meth)acrylates such as cyclopentyl (meth)acrylate, cyclohexyl (meth)acrylate, cyclopentyl (meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyl (meth)acrylate, isobornyl (meth)acrylate, mono(2-(meth)acryloyloxyethyl)tetrahydrophthalate, and mono(2-(meth)acryloyloxyethyl)hexahydrophthalate;Benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxypolyethylene glycol (meth)acrylate, nonylphenoxy aromatic (meth)acrylates such as phenoxy polyethylene glycol (meth)acrylate, phenoxy polypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, and 2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate; 2-tetrahydrofurfuryl (meth)acrylate heterocyclic (meth)acrylates such as acrylate, N-(meth)acryloyloxyethylhexahydrophthalimide, and 2-(meth)acryloyloxyethyl-N-carbazole; caprolactone-modified products thereof; ω-carboxy-polycaprolactone mono(meth)acrylate; glycidyl (meth)acrylate, α-ethylglycidyl (meth)acrylate, α-propylglycidyl (meth)acrylate, α-butylglycidyl (meth)acrylate, 2-methylglycidyl (meth)acrylate, 2- compounds having an ethylenically unsaturated group and an epoxy group, such as ethyl glycidyl (meth)acrylate, 2-propyl glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether;Ethylenically unsaturated groups and oxetanyl such as (2-ethyl-2-oxetanyl)methyl (meth)acrylate, (2-methyl-2-oxetanyl)methyl (meth)acrylate, 2-(2-ethyl-2-oxetanyl)ethyl (meth)acrylate, 2-(2-methyl-2-oxetanyl)ethyl (meth)acrylate, 3-(2-ethyl-2-oxetanyl)propyl (meth)acrylate, and 3-(2-methyl-2-oxetanyl)propyl (meth)acrylate compounds having an ethylenically unsaturated group and an isocyanate group, such as 2-(meth)acryloyloxyethyl isocyanate; and compounds having an ethylenically unsaturated group and a hydroxyl group, such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, and 2-hydroxybutyl (meth)acrylate. The desired composition can be obtained by appropriately combining these monomers;

[0092] Furthermore, if necessary, the following monomers copolymerizable with the above-mentioned monomers may be used: styrene, N-methylmaleimide, N-ethylmaleimide, N-propylmaleimide, N-isopropylmaleimide, N-butylmaleimide, N-isobutylmaleimide, N-2-methyl-2-propylmaleimide, N-pentylmaleimide, N-2-pentylmaleimide, N-3-pentylmaleimide, N-2-methyl-1-butylmaleimide, N-2-methyl-2-butylmaleimide, N-3-methyl-1-butylmaleimide, N-3-methyl-2-butylmaleimide, N-hexylmaleimide, N-2-hexylmaleimide, N-3-hexylmaleimide, N-2-methyl-1-pentylmaleimide, N-2-methyl-2-pentylmaleimide, N-2-methyl-3-pentylmaleimide, N-3-methyl-1-pentylmaleimide, N-3-methyl-2-pentylmaleimide, N-3-methyl-3-pentylmaleimide, N-4-methyl-1-pentylmaleimide, N-4-methyl-2-pentylmaleimide, N-2,2-dimethyl-1-butylmaleimide, N-3,3-dimethyl-1-butylmaleimide, N-3,3-dimethyl- 2-butylmaleimide, N-2,3-dimethyl-1-butylmaleimide, N-2,3-dimethyl-2-butylmaleimide, N-hydroxymethylmaleimide, N-1-hydroxyethylmaleimide, N-2-hydroxyethylmaleimide, N-1-hydroxy-1-propylmaleimide, N-2-hydroxy-1-propylmaleimide, N-3-hydroxy-1-propylmaleimide, N-1-hydroxy-2-propylmaleimide, N-2-hydroxy-2-propylmaleimide, N-1-hydroxy-1-butylmaleimide Imide, N-2-hydroxy-1-butylmaleimide, N-3-hydroxy-1-butylmaleimide, N-4-hydroxy-1-butylmaleimide, N-1-hydroxy-2-butylmaleimide, N-2-hydroxy-2-butylmaleimide, N-3-hydroxy-2-butylmaleimide, N-4-hydroxy-2-butylmaleimide, N-2-methyl-3-hydroxy-1-propylmaleimide, N-2-methyl-3-hydroxy-2-propylmaleimide, N-2-methyl-2-hydroxy-1-propylmaleimide,N-1-hydroxy-1-pentylmaleimide, N-2-hydroxy-1-pentylmaleimide, N-3-hydroxy-1-pentylmaleimide, N-4-hydroxy-1-pentylmaleimide, N-5-hydroxy-1-pentylmaleimide, N-1-hydroxy-2-pentylmaleimide, N-2-hydroxy-2-pentylmaleimide, N-3-hydroxy-2-pentylmaleimide, N-4-hydroxy-2-pentylmaleimide, N-5-hydroxy-2-pentylmaleimide, N-1-hydroxy-3-pentylmaleimide, N-2-hydroxy N-hydroxy-3-pentylmaleimide, N-3-hydroxy-3-pentylmaleimide, N-1-hydroxy-2-methyl-1-butylmaleimide, N-1-hydroxy-2-methyl-2-butylmaleimide, N-1-hydroxy-2-methyl-3-butylmaleimide, N-1-hydroxy-2-methyl-4-butylmaleimide, N-2-hydroxy-2-methyl-1-butylmaleimide, N-2-hydroxy-2-methyl-3-butylmaleimide, N-2-hydroxy-2-methyl-4-butylmaleimide, N-2-hydroxy-3-methyl-1-butylmaleimide N-hydroxy-3-methyl-2-butylmaleimide, N-2-hydroxy-3-methyl-3-butylmaleimide, N-2-hydroxy-3-methyl-4-butylmaleimide, N-4-hydroxy-2-methyl-1-butylmaleimide, N-4-hydroxy-2-methyl-2-butylmaleimide, N-1-hydroxy-3-methyl-2-butylmaleimide, N-1-hydroxy-3-methyl-1-butylmaleimide, N-1-hydroxy-2,2-dimethyl-1-propylmaleimide, N-3-hydroxy-2,2-dimethyl-1-propyl N-hydroxy-1-hexylmaleimide, N-1-hydroxy-2-hexylmaleimide, N-1-hydroxy-3-hexylmaleimide, N-1-hydroxy-4-hexylmaleimide, N-1-hydroxy-5-hexylmaleimide, N-1-hydroxy-6-hexylmaleimide, N-2-hydroxy-1-hexylmaleimide, N-2-hydroxy-2-hexylmaleimide, N-2-hydroxy-3-hexylmaleimide, N-2-hydroxy-4-hexylmaleimide, N-2-hydroxy-5-hexylmaleimide,N-2-hydroxy-6-hexylmaleimide, N-3-hydroxy-1-hexylmaleimide, N-3-hydroxy-2-hexylmaleimide, N-3-hydroxy-3-hexylmaleimide, N-3-hydroxy-4-hexylmaleimide, N-3-hydroxy-5-hexylmaleimide, N-3-hydroxy-6-hexylmaleimide, N-1-hydroxy-2-methyl-1-pentylmaleimide, N-1-hydroxy-2-methyl-2-pentylmaleimide, N-1-hydroxy-2-methyl-3-pentylmaleimide, N-1-hydroxy N-hydroxy-2-methyl-4-pentylmaleimide, N-1-hydroxy-2-methyl-5-pentylmaleimide, N-2-hydroxy-2-methyl-1-pentylmaleimide, N-2-hydroxy-2-methyl-2-pentylmaleimide, N-2-hydroxy-2-methyl-3-pentylmaleimide, N-2-hydroxy-2-methyl-4-pentylmaleimide, N-2-hydroxy-2-methyl-5-pentylmaleimide, N-2-hydroxy-3-methyl-1-pentylmaleimide, N-2-hydroxy-3-methyl-2-pentylmaleimide, N N-2-hydroxy-3-methyl-3-pentylmaleimide, N-2-hydroxy-3-methyl-4-pentylmaleimide, N-2-hydroxy-3-methyl-5-pentylmaleimide, N-2-hydroxy-4-methyl-1-pentylmaleimide, N-2-hydroxy-4-methyl-2-pentylmaleimide, N-2-hydroxy-4-methyl-3-pentylmaleimide, N-2-hydroxy-4-methyl-4-pentylmaleimide, N-2-hydroxy-4-methyl-5-pentylmaleimide, N-3-hydroxy-2-methyl-1-pentyl Maleimide, N-3-hydroxy-2-methyl-2-pentylmaleimide, N-3-hydroxy-2-methyl-3-pentylmaleimide, N-3-hydroxy-2-methyl-4-pentylmaleimide, N-3-hydroxy-2-methyl-5-pentylmaleimide, N-1-hydroxy-4-methyl-1-pentylmaleimide, N-1-hydroxy-4-methyl-2-pentylmaleimide, N-1-hydroxy-4-methyl-3-pentylmaleimide, N-1-hydroxy-4-methyl, N-1-hydroxy-3-methyl-1-pentylmaleimide,N-1-hydroxy-3-methyl-2-pentylmaleimide, N-1-hydroxy-3-methyl-3-pentylmaleimide, N-1-hydroxy-3-methyl-4-pentylmaleimide, N-1-hydroxy-3-methyl-5-pentylmaleimide, N-3-hydroxy-3-methyl-1-pentylmaleimide, N-3-hydroxy-3-methyl-2-pentylmaleimide, N-1-hydroxy-3-ethyl-4-butylmaleimide, N-2-hydroxy-3-ethyl-4-butylmaleimide, N-2-hydroxy-2-ethyl-1-butylmaleimide N-4-hydroxy-3-ethyl-1-butylmaleimide, N-4-hydroxy-3-ethyl-2-butylmaleimide, N-4-hydroxy-3-ethyl-3-butylmaleimide, N-4-hydroxy-3-ethyl-4-butylmaleimide, N-1-hydroxy-2,3-dimethyl-1-butylmaleimide, N-1-hydroxy-2,3-dimethyl-2-butylmaleimide, N-1-hydroxy-2,3-dimethyl-3-butylmaleimide, N-1-hydroxy-2,3-dimethyl-4-butylmaleimide, N-2-hydroxy-2 ,3-dimethyl-1-butylmaleimide, N-2-hydroxy-2,3-dimethyl-3-butylmaleimide, N-2-hydroxy-2,3-dimethyl-4-butylmaleimide, N-1-hydroxy-2,2-dimethyl-1-butylmaleimide, N-1-hydroxy-2,2-dimethyl-3-butylmaleimide, N-1-hydroxy-2,2-dimethyl-4-butylmaleimide, N-2-hydroxy-3,3-dimethyl-1-butylmaleimide, N-2-hydroxy-3,3-dimethyl-2-butylmaleimide, N-2-hydroxy-3,3-di Alkylmaleimides such as methyl-4-butylmaleimide, N-1-hydroxy-3,3-dimethyl-1-butylmaleimide, N-1-hydroxy-3,3-dimethyl-2-butylmaleimide, and N-1-hydroxy-3,3-dimethyl-4-butylmaleimide; N-cyclopropylmaleimide, N-cyclobutylmaleimide, N-cyclopentylmaleimide, N-cyclohexylmaleimide, N-cycloheptylmaleimide, N-cyclooctylmaleimide, N-2-methylcyclohexylmaleimide, and N-2-ethylcyclohexylmaleimide;cycloalkylmaleimides such as N-2-chlorocyclohexylmaleimide; arylmaleimides such as N-phenylmaleimide, N-2-methylphenylmaleimide, N-2-ethylphenylmaleimide, and N-2-chlorophenylmaleimide;

[0093] Among the above, at least one selected from (meth)acrylic esters, which are C8 to C23 aliphatic esters, may be used. (Meth)acrylic resins obtained by copolymerizing such monomers have a low glass transition temperature and therefore exhibit excellent adhesive properties. Furthermore, because the resins have strong hydrophobic interactions, the use of these resins improves the peelability at the interface between the pressure-sensitive adhesive layer 3 and the film-like adhesive 2 after irradiation with ultraviolet light or electron beams.

[0094] The polymerization initiator necessary to obtain the (meth)acrylic resin is not particularly limited as long as it is a compound that generates radicals when heated to 30° C. or higher. Examples of the polymerization initiator include ketone peroxides such as methyl ethyl ketone peroxide, cyclohexanone peroxide, and methylcyclohexanone peroxide; 1,1-bis(t-butylperoxy)cyclohexane, 1,1-bis(t-butylperoxy)-2-methylcyclohexane, 1,1-bis(t-butylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(t-hexylperoxy)cyclohexane, and 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane; peroxyketals such as hexane; hydroperoxides such as p-menthane hydroperoxide; dialkyl peroxides such as α,α'-bis(t-butylperoxy)diisopropylbenzene, dicumyl peroxide, t-butylcumyl peroxide, and di-t-butyl peroxide; diacyl peroxides such as octanoyl peroxide, lauroyl peroxide, stearyl peroxide, and benzoyl peroxide; bis(4-t-butylcyclohexyl)peroxydicarbonate and di-2-ethoxyethyl peroxide. peroxycarbonates such as di-2-ethylhexyl peroxydicarbonate, di-2-ethylhexyl peroxydicarbonate, and di-3-methoxybutyl peroxycarbonate; t-butyl peroxypivalate, t-hexyl peroxypivalate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, t-hexylperoxy-2-ethylhexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxy peroxy esters such as t-butylperoxyisobutyrate, t-hexylperoxyisopropyl monocarbonate, t-butylperoxy-3,5,5-trimethylhexanoate, t-butylperoxylaurate, t-butylperoxyisopropyl monocarbonate, t-butylperoxy-2-ethylhexyl monocarbonate, t-butylperoxybenzoate, t-hexylperoxybenzoate, 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, and t-butylperoxyacetate;Examples include 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), and 2,2'-azobis(4-methoxy-2'-dimethylvaleronitrile);

[0095] The reaction solvent used in solution polymerization is not particularly limited as long as it can dissolve the (meth)acrylic resin. Examples of the reaction solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; alcohols such as methanol, ethanol, isopropanol, butanol, ethylene glycol, and propylene glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol monomethyl ether, and propylene glycol monoethyl ether. Examples of suitable organic solvents include polyhydric alcohol alkyl ethers such as ethylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether; polyhydric alcohol alkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, and diethylene glycol monoethyl ether acetate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone. These organic solvents can be used alone or in combination of two or more. Supercritical carbon dioxide and the like can also be used as a reaction solvent during polymerization.

[0096] Photosensitivity may be imparted to the (meth)acrylic resin by chemically bonding a functional group that can react upon irradiation with ultraviolet light, electron beams, or visible light. Examples of the functional group that can react upon irradiation with ultraviolet light, electron beams, or visible light include a (meth)acrylic group, a vinyl group, an allyl group, a glycidyl group, an alicyclic epoxy group, and an oxetane group.

[0097] As a method for imparting photosensitivity to a (meth)acrylic resin, for example, when synthesizing the above-mentioned (meth)acrylic resin, a monomer having a functional group capable of addition reaction, such as a hydroxyl group, a carboxyl group, a maleyl anhydride group, a glycidyl group, or an amino group, is used as a copolymerization monomer to introduce an addition-reactive functional group into the (meth)acrylic resin, and then an ethylenically unsaturated group is introduced into the side chain by addition reaction with a compound having at least one ethylenically unsaturated group and a group reactive with the addition-reactive functional group (for example, at least one functional group selected from an epoxy group, an oxetanyl group, an isocyanate group, a hydroxyl group, a carboxyl group, etc.), thereby imparting photosensitivity to the (meth)acrylic resin.

[0098] Examples of the compound having at least one ethylenically unsaturated group and a group capable of reacting with the functional group capable of undergoing an addition reaction include glycidyl (meth)acrylate, α-ethyl glycidyl (meth)acrylate, α-propyl glycidyl (meth)acrylate, α-butyl glycidyl (meth)acrylate, 2-methyl glycidyl (meth)acrylate, 2-ethyl glycidyl (meth)acrylate, 2-propyl glycidyl (meth)acrylate, 3,4-epoxy Compounds having an ethylenically unsaturated group and an epoxy group, such as butyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether; (2-ethyl-2-oxetanyl)methyl (meth)acrylate, (2- Compounds having an ethylenically unsaturated group and an oxetanyl group, such as 2-(2-methyl-2-oxetanyl)methyl (meth)acrylate, 2-(2-ethyl-2-oxetanyl)ethyl (meth)acrylate, 2-(2-methyl-2-oxetanyl)ethyl (meth)acrylate, 3-(2-ethyl-2-oxetanyl)propyl (meth)acrylate, and 3-(2-methyl-2-oxetanyl)propyl (meth)acrylate; methacryloyl isocyanate, 2-methacryloyloxymethyl (meth)acrylate, 2-(2-ethyl-2-oxetanyl)ethyl (meth)acrylate, 2-(2-methyl-2-oxetanyl)ethyl (meth)acrylate, 3-(2-ethyl-2-oxetanyl)propyl (meth)acrylate, and 3-(2-methyl-2-oxetanyl)propyl (meth)acrylate; Compounds having an ethylenically unsaturated group and an isocyanate group, such as diethyl isocyanate, 2-acryloyloxyethyl isocyanate, and m-isopropenyl-α,α-dimethylbenzyl isocyanate; compounds having an ethylenically unsaturated group and a hydroxyl group, such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, and 2-hydroxybutyl (meth)acrylate;Examples of the compound include compounds having an ethylenically unsaturated group and a carboxyl group, such as (meth)acrylic acid, crotonic acid, cinnamic acid, succinic acid (2-(meth)acryloyloxyethyl), 2-phthaloylethyl (meth)acrylate, 2-tetrahydrophthaloylethyl (meth)acrylate, 2-hexahydrophthaloylethyl (meth)acrylate, ω-carboxy-polycaprolactone mono(meth)acrylate, 3-vinylbenzoic acid, and 4-vinylbenzoic acid. These compounds can be used alone or in combination of two or more.

[0099] Among the above, from the viewpoints of cost and reactivity, 2-(meth)acryloyloxyethyl isocyanate, glycidyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylate, ethyl isocyanate (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, (meth)acrylic acid, crotonic acid, 2-hexahydrophthaloylethyl (meth)acrylate, or the like may be reacted with a (meth)acrylic resin to impart photosensitivity. The (meth)acrylic resin thus obtained may be a reaction product of a hydroxyl group-containing (meth)acrylic resin with the above compound, or may be a reaction product of a hydroxyl group-containing (meth)acrylic resin with at least one selected from 2-methacryloyloxyethyl isocyanate and 2-acryloyloxyethyl isocyanate. If necessary, a catalyst that promotes the addition reaction may be added, or a polymerization inhibitor may be added to prevent cleavage of the double bond during the reaction.

[0100] The crosslinking agent may be a compound having at least one selected from a hydroxyl group, a glycidyl group, and an amino group introduced into the (meth)acrylic resin and two or more functional groups per molecule that can react with these functional groups. There are no limitations on the structure of the crosslinking agent. Examples of bonds formed by such crosslinking agents include ester bonds, ether bonds, amide bonds, imide bonds, urethane bonds, and urea bonds. Among these, when the crosslinking agent has an aromatic group and an isocyanate group, the peel strength between the pressure-sensitive adhesive layer 3 and the film-like adhesive 2 is less likely to increase even when the amount of ultraviolet light irradiation is increased.

[0101] The amount of crosslinking agent contained in the pressure-sensitive adhesive layer 3 may be 10 to 13 parts by mass per 100 parts by mass of the acrylic copolymer. When the amount of crosslinking agent is 10 parts by mass or more, the elongation at break of the pressure-sensitive adhesive layer 3 before UV irradiation is unlikely to be high, and machinability during the dicing process is likely to be good. In addition, the peel force between the pressure-sensitive adhesive layer 3 and the film-like adhesive 2 after UV irradiation can be effectively reduced, making it possible to set the push-up amount during the pick-up process relatively small. On the other hand, when the amount of crosslinking agent is 13 parts by mass or less, the adhesive strength with the pressure-sensitive adhesive layer 3 before UV irradiation is likely to be good.

[0102] The crosslinking agent may be one having two or more isocyanate groups per molecule, which easily reacts with the hydroxyl group, glycidyl group, amino group, etc. introduced into the (meth)acrylic resin to form a strong crosslinked structure, thereby suppressing adhesion of the pressure-sensitive adhesive layer 3 to the semiconductor chip after the die bonding process.

[0103] Examples of crosslinking agents having two or more isocyanate groups in one molecule include isocyanate compounds such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, and lysine isocyanate.

[0104] Furthermore, it is also possible to use an isocyanate group-containing oligomer obtained by reacting the above-mentioned isocyanate compound with a polyhydric alcohol having two or more hydroxyl groups (OH groups) per molecule. Examples of polyhydric alcohols having two or more hydroxyl groups per molecule include ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octanediol, 1,9-nonanediol, 1,10-decanediol, 1,11-undecanediol, 1,12-dodecanediol, glycerin, pentaerythritol, dipentaerythritol, 1,4-cyclohexanediol, and 1,3-cyclohexanediol.

[0105] Among the above, when the crosslinking agent is a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more hydroxyl groups in one molecule, the adhesive layer 3 can form a dense crosslinked structure.

[0106] The photopolymerization initiator may be one that generates an active species that can cause chain polymerization of the acrylic copolymer when irradiated with one or more types of light selected from ultraviolet light, electron beams, and visible light. The photopolymerization initiator may be a photoradical polymerization initiator or a photocationic polymerization initiator. The chain-polymerizable active species may be one that initiates a polymerization reaction by reacting with a functional group of the acrylic copolymer.

[0107] Examples of the photoradical polymerization initiator include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethan-1-one; α-hydroxyketones such as 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one, and 1,2-methyl-1-[4-(methylthio)phenyl]- α-Aminoketones such as 2-morpholinopropan-1-one; oxime esters such as 1-[4-(phenylthio)phenyl]-1,2-octadione-2-(benzoyl)oxime; phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, ... 2,4,5-triarylimidazole dimers such as 2-(o-fluorophenyl)-4,5-diphenylimidazole dimer, 2-(o-methoxyphenyl)-4,5-diphenylimidazole dimer, and 2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer; benzophenone, N,N,N',N'-tetramethyl-4,4'-diaminobenzophenone, N,N,N',N'-tetraethyl-4,4'-diaminobenzophenone, 4-methoxyphenyl benzophenone compounds such as 4'-dimethylaminobenzophenone; quinone compounds such as 2-ethylanthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1,2-benzanthraquinone, 2,3-benzanthraquinone, 2-phenylanthraquinone, 2,3-diphenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenanthraquinone, 2-methyl-1,4-naphthoquinone, and 2,3-dimethylanthraquinone;Benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, and benzoin phenyl ether; benzoin compounds such as benzoin, methylbenzoin, and ethylbenzoin; benzyl compounds such as benzyl dimethyl ketal; acridine compounds such as 9-phenylacridine and 1,7-bis(9,9'-acridinylheptane); N-phenylglycine, and coumarin;

[0108] In the above-mentioned 2,4,5-triarylimidazole dimer, the substituents on the aryl groups of the two triarylimidazole moieties may be the same to give a symmetrical compound, or may be different to give an asymmetrical compound. A thioxanthone compound may also be combined with a tertiary amine, such as the combination of diethylthioxanthone and dimethylaminobenzoic acid.

[0109] Examples of the photocationic polymerization initiator include aryl diazonium salts such as p-methoxybenzenediazonium hexafluorophosphate, diaryliodonium salts such as diphenyliodonium hexafluorophosphate and diphenyliodonium hexafluoroantimonate, triarylsulfonium salts such as triphenylsulfonium hexafluorophosphate, triphenylsulfonium hexafluoroantimonate, diphenyl-4-thiophenoxyphenylsulfonium hexafluorophosphate, diphenyl-4-thiophenoxyphenylsulfonium hexafluoroantimonate and diphenyl-4-thiophenoxyphenylsulfonium pentafluorohydroxyantimonate, triphenylselenonium hexafluorophosphate ... Examples of suitable cationic polymerization initiators include triarylselenonium salts such as fluorophosphate, triphenylselenonium tetrafluoroborate, and triphenylselenonium hexafluoroantimonate; dialkylphenacylsulfonium salts such as dimethylphenacylsulfonium hexafluoroantimonate and diethylphenacylsulfonium hexafluoroantimonate; dialkyl-4-hydroxy salts such as 4-hydroxyphenyldimethylsulfonium hexafluoroantimonate and 4-hydroxyphenylbenzylmethylsulfonium hexafluoroantimonate; and sulfonate esters such as α-hydroxymethylbenzoin sulfonate, N-hydroxyimide sulfonate, α-sulfonyloxyketone, and β-sulfonyloxyketone. These cationic polymerization initiators can be used alone or in combination of two or more. The photocationic polymerization initiator can also be used in combination with an appropriate sensitizer.

[0110] A photoradical initiator may be used when strict insulation properties and insulation reliability are required for the pressure-sensitive adhesive layer 3. Among them, benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethan-1-one; α-hydroxyketones such as 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; benzophenone, 2-ethylanthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1,2-benzanthraquinone, 2,3-benzanthraquinone, 2-phenylanthraquinone, and 2,3-diphenylanthraquinone are preferred. Quinones such as quinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenanthraquinone, 2-methyl-1,4-naphthoquinone, and 2,3-dimethylanthraquinone; benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, and benzoin phenyl ether; benzoin compounds such as benzoin, methylbenzoin, and ethylbenzoin; benzyl compounds such as benzyl dimethyl ketal; acridine compounds such as 9-phenylacridine and 1,7-bis(9,9'-acridinylheptane); N-phenylglycine, coumarin, and the like have excellent storage stability. Furthermore, 2,2-dimethoxy-1,2-diphenylethan-1-one, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one, and benzophenone have the advantage that they can be handled under ordinary ultraviolet-shielding fluorescent lamps and do not require facilities such as a yellow room.

[0111] The optimal amount of photopolymerization initiator to be added varies depending on the desired thickness of the pressure-sensitive adhesive layer 3 and the light source used, but may be, for example, 0.5 to 1.5 parts by mass per 100 parts by mass of the acrylic copolymer. When the amount of photopolymerization initiator is 0.5 parts by mass or more, the peel strength from the film-like adhesive 2 after ultraviolet irradiation can be sufficiently reduced. When the amount of photopolymerization initiator is 1.5 parts by mass or less, decomposition of the pressure-sensitive adhesive layer 3 when irradiated with ultraviolet light can be suppressed.

[0112] The thickness of the pressure-sensitive adhesive layer 3 may be three or more times the thickness of the film-like adhesive 2. If the thickness of the pressure-sensitive adhesive layer 3 is increased too much, the thickness variation will increase and the cost of raw materials will increase, so the thickness of the pressure-sensitive adhesive layer 3 may be three to five times the thickness of the film-like adhesive 2.

[0113] The thickness of the pressure-sensitive adhesive layer 3 may be 25 to 295 μm, 50 to 150 μm, or 50 to 100 μm. When the thickness of the pressure-sensitive adhesive layer 3 is 25 μm or more, the occurrence of voids during lamination of the film-like adhesive 2 is more easily suppressed, and void entrapment tends to be easily suppressed, particularly even when there is a large difference between the height of the electrode and the thickness of the film-like adhesive 2. When the thickness of the pressure-sensitive adhesive layer 3 is 295 μm or less, the amount of residual solvent in the pressure-sensitive adhesive layer 3 can be prevented from increasing, and the occurrence of variations in adhesive strength due to the influence of residual solvent tends to be suppressed.

[0114] The pressure-sensitive adhesive layer 3 can be formed by dissolving or dispersing the pressure-sensitive adhesive composition containing the above-mentioned components in a solvent to form a varnish, applying this varnish to the substrate 4, and removing the solvent by heating.

[0115] Methods for applying the varnish onto the substrate 4 include commonly known methods such as knife coating, roll coating, spray coating, gravure coating, bar coating, curtain coating, comma coating, and die coating.

[0116] The temperature condition when removing the solvent by heating may be 70 to 150°C.

[0117] Examples of the solvent to be used include the same solvents as those used when forming the film adhesive 2.

[0118] Examples of the substrate 4 include plastic films such as polyester film, polytetrafluoroethylene film, polyethylene film, polypropylene film, and polymethylpentene film. Among these, when a polyester film is used, the coating appearance and easy releasability are likely to be improved, and when a polyethylene terephthalate film is used, the coating appearance and easy releasability are likely to be improved. The substrate 4 may be a mixture of two or more materials selected from the above materials, or a multilayer structure of the above films.

[0119] The thickness of the substrate 4 may be 5 to 50 μm or 12 to 38 μm. When the thickness of the substrate 4 is 5 μm or more, deformation of the substrate 4 due to thermal shrinkage during the drying process of the pressure-sensitive adhesive layer 3 tends to be easily suppressed, and the occurrence of thickness variations in the pressure-sensitive adhesive layer 3 tends to be easily suppressed. Furthermore, when the pressure-sensitive adhesive tape 5 is a back-grinding tape, when the thickness of the substrate 4 is 50 μm or less, warpage of the wafer after back-grinding tends to be more sufficiently suppressed.

[0120] The thickness of the adhesive tape 5 may be, for example, 75 to 300 μm, 75 to 175 μm, or 85 to 125 μm. When the thickness of the adhesive tape 5 is 75 μm or more, it tends to be easier to prevent insufficient filling of the areas around the bumps and the scribe lines. When the thickness of the adhesive tape 5 is 300 μm or less, it tends to be easier to prevent the adhesive layer 3 from bleeding out and to prevent the film-like adhesive 2 from peeling off from the wafer when the adhesive tape is peeled off.

[0121] The adhesive tape 10 described above can be obtained, for example, by a method including a step of laminating the film-like adhesive 2 in the film-like adhesive with a support substrate prepared by the method described above to the pressure-sensitive adhesive layer 3 in the pressure-sensitive adhesive tape 5. It is also possible to prepare the adhesive tape 10 by applying a coating liquid of the film-like adhesive 2 onto the pressure-sensitive adhesive layer 3 of the pressure-sensitive adhesive tape 5 to form the film-like adhesive 2, but applying and drying the coating liquid on the pressure-sensitive adhesive layer 3 can cause problems such as destruction of the pressure-sensitive adhesive layer 3 and component migration between the pressure-sensitive adhesive and the adhesive, and therefore, from the perspective of preventing the occurrence of such problems, the adhesive tape 10 may be obtained by laminating a film-like adhesive with a support substrate and a pressure-sensitive adhesive tape.

[0122] The above-mentioned method for producing the adhesive tape 10 can suppress the migration (penetration) of the liquid epoxy resin in the film-like adhesive 2 into the pressure-sensitive adhesive layer 3. The effect of suppressing the migration of the liquid epoxy resin into the pressure-sensitive adhesive layer can be indirectly confirmed by the rate of increase of the liquid epoxy resin in the pressure-sensitive adhesive layer. For example, when a storage test is conducted in which the adhesive tape 10 is stored at 40°C for 48 hours immediately after production, the rate of increase of the liquid epoxy resin in the pressure-sensitive adhesive tape 5 immediately after the test is completed from immediately before the start of the test can be 30% by mass or less (e.g., 5 to 30% by mass). As mentioned above, the amount of migration of the liquid epoxy resin can vary depending on the type of liquid epoxy resin, etc., and by appropriately changing these factors, the rate of increase of the liquid epoxy resin can be set to 25% by mass or less, 20% by mass or less, 15% by mass or less, or 10% by mass or less. The increase rate of the liquid epoxy resin can be obtained by measuring the amount of liquid epoxy resin in the pressure-sensitive adhesive tape 5 immediately after lamination (initial amount) and the amount of liquid epoxy resin in the pressure-sensitive adhesive tape 5 in the adhesive tape 10 after a storage test (amount after storage) using reverse phase liquid chromatography (RPLC), and determining the increase rate of the amount of liquid epoxy resin ([amount after storage - initial amount] / [initial amount] x 100). Specific measurement conditions are shown in the examples.

[0123] <Method for manufacturing semiconductor chip with adhesive layer and semiconductor device> Next, a method for manufacturing a semiconductor chip with adhesive layer and a semiconductor device using the adhesive tape 10 of the above embodiment will be described. Note that, hereinafter, the adhesive tape 10 from which the support substrate 1 has been peeled will be referred to as "adhesive tape X."

[0124] 2 to 4 are schematic cross-sectional views for explaining a method for manufacturing a semiconductor chip 30 with an adhesive layer according to one embodiment.

[0125] The manufacturing method of the semiconductor chip 30 with an adhesive layer includes attaching the adhesive tape X to the semiconductor wafer 20 from the film-like adhesive 2 side (hereinafter also referred to as the "laminating process"; see FIG. 2 ), grinding the surface of the semiconductor wafer 20 with the adhesive tape X attached opposite to the adhesive tape 10 (hereinafter also referred to as the "back-grinding process"; see FIG. 3 ), and dicing the semiconductor wafer 20 with the adhesive tape X attached to obtain the semiconductor chip 30 with the adhesive layer (hereinafter also referred to as the "dicing process"; see FIG. 4 ). As shown in FIGS. 3 and 4 , the manufacturing method of the semiconductor chip 30 with an adhesive layer may further include peeling the adhesive tape 5 from the adhesive tape X. Note that in this embodiment, the adhesive tape 5 of the adhesive tape 10 is a back-grinding tape, so the back-grinding process is included, but the back-grinding process is not essential. In one embodiment, the adhesive tape may be attached to the semiconductor wafer after the back-grinding process. If the back-grinding process is not performed, the adhesive tape 5 may be, for example, a dicing tape, a protective tape, or the like.

[0126] The semiconductor wafer 20 used in this embodiment has, on one main surface thereof, protruding electrodes (solder bumps) 26 (FIG. 2(a)). The protruding electrodes 26 are made up of bumps 22 and solder balls 24 provided on the bumps 22.

[0127] Examples of the semiconductor wafer 20 include a 6-inch wafer, an 8-inch wafer, a 12-inch wafer, etc., whose surface has been treated with an oxide film. Examples of the bumps 22 include, but are not limited to, those made of copper, silver, gold, etc. Examples of the solder balls 24 include those made of a conventionally known solder material such as lead-containing solder or lead-free solder.

[0128] Grooves 28 are formed as scribe lines that serve as marks during dicing on the main surface of the semiconductor wafer 20 on which the protruding electrodes 26 are provided. The grooves 28 are recesses with a depth of about 5 to 15 μm.

[0129] The thickness of the semiconductor wafer 20 before thinning can be in the range of 250 to 800 μm. Typically, the cut semiconductor wafer has a thickness of 625 to 775 μm for sizes of 6 to 12 inches.

[0130] The height of the bumps 22 may be 5 to 50 μm from the viewpoint of miniaturization of semiconductors, and the height of the solder balls 24 may be 2 to 30 μm from the viewpoint of miniaturization of semiconductors.

[0131] In the lamination process, the support substrate 1 is peeled from the adhesive tape 10, and the film-like adhesive (adhesive layer) 2, pressure-sensitive adhesive layer 3, and substrate 4 are arranged in this order on the surface of the semiconductor wafer 20 on which the protruding electrodes (solder bumps) 26 are formed (hereinafter referred to as the "functional surface"), and pressure is applied to the semiconductor wafer 20 and substrate 4 so that the tips of the solder balls 24 penetrate the film-like adhesive 2 (see FIG. 2(b)). While it is most desirable for the tips of the solder balls to penetrate the adhesive layer, even if a few microns of the adhesive layer remain at the tips of the solder balls, it is acceptable as long as this does not affect the connectivity when the substrate and semiconductor chip are electrically connected via the solder balls, as described below. In this embodiment, the film-like adhesive 2 is attached to the functional surface of the semiconductor wafer 20 by vacuum lamination, making it easy to expose the bumps.

[0132] The vacuum lamination method may be a method using a diaphragm, a method using a roll, a press method, or the like, and from the viewpoint of embeddability, the diaphragm method is preferable.

[0133] The lamination conditions may be a lamination temperature of 50 to 100° C., a linear pressure of 0.5 to 3.0 kgf / cm, and a feed rate of 0.2 to 2.0 m / min.

[0134] When a diaphragm type vacuum lamination method is used, the conditions may be as follows: stage temperature: 20 to 60°C, diaphragm temperature: 50 to 100°C, degassing time: 10 to 100 seconds, pressurization time: 10 to 100 seconds, and pressure: 0.1 to 1.0 MPa. In the case of the diaphragm type, the lamination temperature refers to the diaphragm temperature.

[0135] If lamination is performed at a high temperature exceeding 80°C, the wafer tends to warp significantly after backgrinding. On the other hand, if the lamination temperature is too low, it tends to be difficult to fill the periphery of the bumps. Therefore, lamination may be performed at a temperature of 50 to 80°C.

[0136] In the back grinding process, the side of the semiconductor wafer 20 opposite to the adhesive tape X to which the adhesive tape X is attached, i.e., the side of the semiconductor wafer 20 opposite to the side on which the protruding electrodes (solder bumps) 26 are formed, is ground to thin the semiconductor wafer 20 (FIG. 3). The grinding can be performed using a back grinder.

[0137] In the back grinding process, the semiconductor wafer 20 may be thinned to a thickness of 10 to 150 μm. If the thickness of the thinned semiconductor wafer 20 is 10 μm or more, the semiconductor wafer is less likely to be damaged. If the thickness of the thinned semiconductor wafer 20 is 150 μm or less, it is possible to meet the demand for miniaturization of semiconductor devices.

[0138] In the dicing process, first, the polished surface side of the thinned semiconductor wafer 20 is attached to a dicing tape 6 (FIG. 4(a)). Next, a dicing device is used to cut the semiconductor wafer 20 and the film-like adhesive 2 along the grooves 28, thereby dividing the semiconductor wafer 20 into individual pieces (FIG. 4(b)). This results in semiconductor chips 30 with an adhesive layer, each consisting of a semiconductor chip 29 and an adhesive layer 9. The adhesive tape 5, consisting of the substrate 4 and the adhesive layer 3, may be peeled off from the film-like adhesive 2 before dicing.

[0139] After the dicing process is completed, the semiconductor chips with adhesive attached are picked up using a pick-up device and used in the manufacture of semiconductor devices.

[0140] Although not shown, from the viewpoint of obtaining a semiconductor chip with an adhesive layer that can be applied to stacking and multi-layering techniques, the manufacturing method of this embodiment may include a step of forming an electrode on the main surface of the semiconductor wafer 20 or the semiconductor chip 29 opposite to the main surface on which the protruding electrodes 26 are formed, or may include a step of forming a through electrode in the semiconductor wafer 20 or the semiconductor chip 29. The method of manufacturing the electrode is not particularly limited, and a known method may be adopted.

[0141] 5 and 6 are schematic cross-sectional views for explaining a method for manufacturing the semiconductor device 100 according to this embodiment.

[0142] The manufacturing method of the semiconductor device 100 includes the steps of: placing a semiconductor chip 30a with a first adhesive layer on a base 7 from the adhesive layer 9a side; and bonding the chips together under heat and pressure to obtain a laminate 40 (hereinafter also referred to as the "first lamination step"; see FIG. 5); and placing a semiconductor chip 30b with a second adhesive layer on the laminate 40 from the adhesive layer 9b side; and bonding the chips together under heat and pressure (hereinafter also referred to as the "second lamination step"; see FIG. 6). The first semiconductor chip 30a with an adhesive layer and the second semiconductor chip 30b with an adhesive layer are semiconductor chips with adhesive layers obtained by the method of the above embodiment. The first semiconductor chip 30a with an adhesive layer and the second semiconductor chip 30b with an adhesive layer have electrodes (31a, 31b) on the surface opposite to the surface on which the protruding electrodes (26a, 26b) are provided, and through electrodes (32a, 32b) are formed between the electrodes (31a, 31b) and the protruding electrodes (26a, 26b). The base 7 is another semiconductor chip having electrodes 8 or a support member (such as a wiring circuit board) for mounting a semiconductor chip having electrodes.

[0143] In the first lamination process, the semiconductor chip 30a with the first adhesive layer is heated and pressurized in the direction in which the protruding electrodes 26a and the electrodes 8 face each other, thereby melting the solder in the protruding electrodes 26a and joining the protruding electrodes 26a of the semiconductor chip 30a with the first adhesive layer to the electrodes 8 of the base 7 (Figures 5(a) and (b)).

[0144] The first laminate process may include pressing the adhesive layer-attached semiconductor chip 30a and the base 7 in the direction in which the protruding electrodes 26a and the electrodes 8 face each other at a temperature lower than the melting point of the solder in the protruding electrodes 26a (first thermocompression process), and melting the solder in the protruding electrodes 26a by heating to join the protruding electrodes 26a and the electrodes 8 (second thermocompression process).

[0145] If the adhesive layer 9a further contains a flux component, the pressure in the first thermocompression bonding step may be applied at a temperature higher than the melting point or softening point of the flux component and lower than the melting point of the solder of the protruding electrodes, thereby achieving a stronger connection.

[0146] The thermocompression bonding conditions in the first thermocompression bonding step may be 100 to 200°C, pressure: 0.1 to 1.5 MPa, and time: 1 to 15 seconds, or may be a temperature: 100 to 180°C, pressure: 0.1 to 1.0 MPa, and time: 1 to 10 seconds. The thermocompression bonding conditions in the second thermocompression bonding step may be a temperature: 230 to 350°C, pressure: 0.1 to 1.5 MPa, and time: 1 to 15 seconds, or may be a temperature: 230 to 300°C, pressure: 0.1 to 1.0 MPa, and time: 1 to 15 seconds. The above temperature and pressure conditions refer to the temperature and pressure applied to the adhesive layer.

[0147] In this way, the electrodes 8 of the base 7 and the bumps 22a of the semiconductor chip 29a are electrically connected via the solder balls 24a, and the space between the base 7 and the semiconductor chip 29a is sealed by the sealing portion 35a, which is the cured adhesive, to obtain a laminate 40 (Figure 5 (b)).

[0148] In the second stacking process, the semiconductor chip 30b with the second adhesive layer is heated and pressurized in a direction in which the protruding electrodes (solder bumps) 26b and the electrodes 31a face each other, thereby melting the solder in the protruding electrodes 26b and joining the protruding electrodes 26b of the semiconductor chip 30b with the second adhesive layer to the electrodes 31a of the laminate 40 (Figures 6(a) and (b)).

[0149] The second lamination step can be carried out in the same manner as the first lamination step. The details of the heating and pressure bonding conditions in the second lamination step are the same as the details of the heating and pressure bonding conditions in the first lamination step.

[0150] In this way, the electrodes 31a of the laminate 40 and the bumps 22b of the semiconductor chip 29b are electrically connected via the solder balls 24b, and the laminate 40 and the semiconductor chip 29b are sealed with the sealing portion 35b, which is a hardened adhesive, to obtain the semiconductor device 100 (Figure 6 (b)).

[0151] In this embodiment, a plurality of semiconductor chips with adhesive layers may be stacked in multiple stages by repeating a step similar to the second stacking step. That is, the manufacturing method of this embodiment may include a plurality of steps of stacking further semiconductor chips with adhesive layers on the semiconductor device 100.

[0152] The film-like adhesive of the adhesive tape used in the manufacturing method of this embodiment is less likely to increase in viscosity over time, and therefore, according to the manufacturing method of this embodiment, even if the semiconductor chip with the first adhesive layer and the semiconductor chip with the second adhesive layer are produced using adhesive tapes manufactured at different times, variation in the distance (gap height) between the chips is less likely to occur when the chips are stacked under the same conditions.

[0153] Although several embodiments of the present disclosure have been described above, the present disclosure is not limited to the above embodiments.

[0154] The present disclosure will be described in more detail below using examples, but the present disclosure is not limited to these examples.

[0155] Details of the materials used in the examples are as follows. The number average molecular weight was measured using GPC (gel permeation chromatography) under the following conditions. [Conditions] Column: GL-A130-S + GL-A120-S + GL-A110-S, manufactured by Hitachi High-Tech Corporation Column temperature: 35°C Eluent: THF Flow rate: 1.0 ml / min Sample concentration: 3 g / l (THF soluble content) Injection volume: 70 μl Detector: differential refractometer (RI) Molecular weight calibration standard: standard polystyrene Data processing: OpenLAB CDS (EZChrom Edition), manufactured by Agilent Technologies

[0156] (a) Epoxy Resin [Liquid Epoxy Resin] YL983U (liquid epoxy resin listed in Table 1, manufactured by Mitsubishi Chemical Corporation, trade name) BATG (liquid epoxy resin listed in Table 1, manufactured by Resonac Corporation, trade name) CDMDG (liquid epoxy resin listed in Table 1, manufactured by Resonac Corporation, trade name) EP-4000L (liquid epoxy resin listed in Table 1, manufactured by DIC Corporation, trade name) EP-4010L (liquid epoxy resin listed in Table 1, manufactured by DIC Corporation, trade name)

[0157] The molecular weights in the table are the molecular weights (number average molecular weights) of the liquid epoxy resins.

[0158] [Solid Epoxy Resins] YX7110B80 (flexible solid epoxy resin, product name, manufactured by Mitsubishi Chemical Corporation) EP1032H60 (multifunctional solid epoxy resin having a triphenolmethane skeleton, product name, manufactured by Mitsubishi Chemical Corporation)

[0159] (b) Curing agent: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole, product name, manufactured by Shikoku Chemicals Corporation)

[0160] (c) Flux compound: glutaric acid (manufactured by Tokyo Chemical Industry Co., Ltd., melting point: approximately 98°C)

[0161] (d) Polymer component having a weight-average molecular weight of 10,000 or more: FX-293 (phenoxy resin, manufactured by Nippon Steel Chemical & Material Co., Ltd., trade name, Tg: approximately 160°C, weight-average molecular weight: 40,000 to 50,000)

[0162] (e) Filler: EXL2655 (acrylic rubber organic filler, manufactured by DOW, trade name); KE180G-HLA (silica filler, manufactured by Admatechs Co., Ltd., trade name)

[0163] Examples 1 to 3 and Comparative Examples 1 to 2 (Preparation of Coating Liquid) Coating liquids for forming film-like adhesives in Examples 1 to 3 and Comparative Examples 1 and 2 were prepared. Specifically, the components shown in Table 2 were added to an organic solvent (cyclohexanone) so that the NV value ([mass of coating component after drying] / [mass of coating component before drying] × 100) was 60%, to obtain a mixed liquid. At this time, the amount of each component added was the amount (unit: parts by mass) shown in Table 2. Then, beads with a diameter of 1.0 mm and beads with a diameter of 2.0 mm were added to the mixed liquid, and the mixture was stirred for 30 minutes using a bead mill (Fritsch Japan Co., Ltd., planetary fine grinder P-7). The amount of beads added was the same mass as the non-volatile content of the mixed liquid (the total amount of components other than the organic solvent). After stirring, the beads were removed by filtration to obtain a coating liquid for forming a film-like adhesive.

[0164]

[0165] (Preparation of film-like adhesive with supporting substrate) The coating liquid prepared above was applied to a release film (manufactured by Toyobo Co., Ltd., product name "Purex A55") serving as a supporting substrate using a small precision coating device (Kanei Seiki Co., Ltd.) so that the film thickness after drying would be 12 μm. The coating film was then dried (100° C. / 10 min) in a clean oven (manufactured by ESPEC) to form a film-like adhesive, and a film-like adhesive with a supporting substrate was obtained.

[0166] (Preparation of adhesive tape) An acrylic copolymer was obtained by solution polymerization using 2-ethylhexyl acrylate and methyl methacrylate as main monomers and hydroxyethyl acrylate and acrylic acid as functional group monomers. The weight-average molecular weight of this synthesized acrylic copolymer was 400,000, and the glass transition temperature was -38°C. 100 parts by mass of this acrylic copolymer was blended with 10 parts by mass of a polyfunctional isocyanate crosslinking agent (manufactured by Nippon Polyurethane Industry Co., Ltd., product name "Coronate HL") to prepare an adhesive varnish.

[0167] The adhesive varnish was applied to a 38 μm thick polyethylene terephthalate (PET) substrate (manufactured by Unitika Ltd., product name "EMBLED S25") using an applicator while adjusting the gap so that the adhesive layer would have a thickness of 60 μm after drying, and then dried for 5 minutes at 80° C. This gave an adhesive tape having a pressure-sensitive adhesive layer formed on the substrate.

[0168] (Preparation of Adhesive Tape) The film-like adhesive with a supporting substrate and pressure-sensitive adhesive tape prepared above in each of the Examples and Comparative Examples were used to prepare adhesive tapes in Examples 1 to 3 and Comparative Examples 1 and 2. Specifically, the pressure-sensitive adhesive tape was laminated with the film-like adhesive with a supporting substrate using a roll laminator (lamination temperature: 30±10°C) to obtain an adhesive tape having a laminated structure of PET substrate / pressure-sensitive adhesive layer / adhesive layer / supporting substrate.

[0169] <Evaluation> (Migration of Liquid Epoxy Resin) The migration of the liquid epoxy resin in the adhesive tapes of Examples 1 to 3 and Comparative Examples 1 and 2 was confirmed by the following method. Specifically, first, the pressure-sensitive adhesive tape was peeled from the adhesive tape immediately after production, and the pressure-sensitive adhesive tape was immersed in acetonitrile to extract the liquid epoxy resin from the pressure-sensitive adhesive tape. The content of the liquid epoxy resin in the extracted components (peak area of ​​the peak derived from the liquid epoxy resin, initial content) was determined using reverse phase liquid chromatography (RPLC). Next, a storage test was performed in which the adhesive tape was stored at 40°C for 48 hours immediately after production. After the storage test, the pressure-sensitive adhesive tape was peeled from the adhesive tape. The liquid epoxy resin was extracted from the peeled pressure-sensitive adhesive tape in the same manner as above, and the content of the liquid epoxy resin in the extracted components (peak area of ​​the peak derived from the liquid epoxy resin, content after storage) was determined. Next, the increase rate r ([content rate after storage - initial content rate] / [initial content rate] x 100) before and after the storage test was calculated from the content rate of the liquid epoxy resin calculated above, and the migration of the liquid epoxy resin in each adhesive tape was confirmed from this increase rate r. The increase rate r is shown in Table 5. The measurement conditions for RPLC were as follows. [Conditions] Apparatus: Waters ACQUITY UPLC H-Class / eλPDA Detection wavelength: 210 to 800 nm Column: ACQUITY UPLC BEH C18 (2.1 mmφ x 100 mm) Column temperature: 60°C for Examples 2 and 3, and 40°C for the others Eluent: A acetonitrile B HO Gradient conditions: The conditions shown in Table 3 were used for Examples 2 and 3, and Table 4 for the others.

[0170]

[0171]

[0172] (Viscosity Stability) The viscosity stability of the film-like adhesive in the adhesive tapes of Examples 1 to 3 and Comparative Examples 1 and 2 was evaluated by the following method. Specifically, the film-like adhesive was first peeled from the adhesive tape immediately after production, along with the support substrate and adhesive tape, to obtain a film-like adhesive. This film-like adhesive was laminated multiple times using a desktop laminator (product name: Hotdog GK-13DX, manufactured by Lamy Corporation) to obtain a 400 μm laminated film. The lamination temperature was 40 to 80°C. The obtained laminated film was punched out using a 10 mm square punch to prepare a viscosity measurement sample. The viscosity at 80°C of the obtained viscosity measurement sample was measured using a rotational rheometer (manufactured by TA Instruments, product name: ARES-G2) under the following conditions, and this was taken as the 80°C viscosity (initial) of the film-like adhesive in the adhesive tape. The results are shown in Table 5. [Measurement conditions] Measurement tool size: 8 mmφ Heating rate: 10°C / min Frequency: 10 Hz Temperature range: 30 to 180°C

[0173] Next, to confirm the viscosity increase of the adhesive tape over time, a storage test (accelerated test) was conducted in which the adhesive tape immediately after production was stored at 40°C for 48 hours. This storage test corresponds to a storage test in which the adhesive tape was stored at room temperature (25°C) for 4 weeks. After the test, the 80°C viscosity (after the accelerated test) of the film-like adhesive in the adhesive tape was measured in the same manner as above. In addition, the amount of change in 80°C viscosity from the initial 80°C viscosity and the 80°C viscosity after the accelerated test ([80°C viscosity after accelerated test] - [initial 80°C viscosity]) was determined, and viscosity stability was evaluated based on this amount of change. The results are shown in Table 5.

[0174]

[0175] 1... supporting substrate, 2... film-like adhesive, 3... pressure-sensitive adhesive layer, 4... substrate, 5... adhesive tape, 6... dicing tape, 7... base, 8... electrode, 9... adhesive layer (film-like adhesive), 10... adhesive tape, 20... semiconductor wafer, 22, 22a, 22b... bumps, 24, 24a, 24b... solder balls, 26, 26a, 26b... protruding electrodes (solder bumps), 28... grooves, 29, 29a, 29b... semiconductor chips, 30, 30a, 30b... semiconductor chips with adhesive layer, 31a, 31b... electrodes, 32a, 32b... through electrodes, 100... semiconductor device

Claims

1. An adhesive tape for semiconductors comprising a film adhesive and a pressure-sensitive adhesive tape attached to the film adhesive, wherein the film adhesive contains an epoxy resin and a curing agent, the epoxy resin contains an epoxy resin that is liquid at 25°C, and the epoxy resin that is liquid at 25°C contains a compound represented by the following formula (I): [In formula (I), R １ and R ２ each independently represents a hydrogen atom or a glycidyl group, and l and m represent an integer of 0 or more. １ and R ２ is a hydrogen atom, at least one of l and m is 1 or more.

2. The adhesive tape for semiconductor use according to claim 1, wherein the epoxy resin in a liquid state at 25°C has a number average molecular weight of 350 or more.

3. An adhesive tape for semiconductor use according to claim 1 or 2, wherein the content of the epoxy resin that is liquid at 25°C is 1 to 30 mass % based on the total mass of the film-like adhesive.

4. The adhesive tape for semiconductor use according to any one of claims 1 to 3, wherein the epoxy resin comprises an epoxy resin that is solid at 25°C.

5. The adhesive tape for semiconductor use according to any one of claims 1 to 4, wherein the curing agent comprises an imidazole-based curing agent.

6. The adhesive tape for semiconductor use according to any one of claims 1 to 5, wherein the film-like adhesive further contains a flux compound.

7. The adhesive tape for semiconductor use according to any one of claims 1 to 6, wherein the film-like adhesive further contains a polymer component having a weight-average molecular weight of 10,000 or more.

8. The adhesive tape for semiconductor use according to any one of claims 1 to 7, wherein the film-like adhesive further contains a filler.

9. The adhesive tape for semiconductor use according to any one of claims 1 to 8, wherein the viscosity of the film-like adhesive at 80°C is 3,000 to 10,000 Pa·s.

10. An adhesive tape for semiconductor use according to any one of claims 1 to 9, wherein the adhesive layer that forms the surface of the adhesive tape that comes into contact with the film-like adhesive contains a (meth)acrylic resin.

11. A method for manufacturing a semiconductor chip with an adhesive layer, comprising: attaching the adhesive tape for semiconductors according to any one of claims 1 to 10 to a semiconductor wafer from the film-like adhesive side; and dicing the semiconductor wafer with the adhesive tape attached to obtain semiconductor chips with an adhesive layer.

12. A method for manufacturing a semiconductor device in which a plurality of semiconductor chips are stacked, comprising: placing a first semiconductor chip with an adhesive layer obtained by the method described in claim 11 on a base from the adhesive layer side, and pressing the chip while heating to obtain a stack; and placing a second semiconductor chip with an adhesive layer obtained by the method described in claim 11 on the stack from the adhesive layer side, and pressing the chip while heating.

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