Processing method

Abstract

Provided is a technique for patterning a film such as a metal compound film. A processing method according to the present disclosure comprises: (a) a step for preparing a substrate having a base film, the substrate having a first region; (b) a step for forming a metal compound film on the base film in the first region, the metal compound film being supported by a support member and having a prescribed pattern; and (c) a step for removing the support member to form the metal compound film having the prescribed pattern in the first region on the base film.

Description

Processing method

[0001] An exemplary embodiment of the present disclosure relates to a processing method.

[0002] A technique for forming contact holes used in device manufacturing is disclosed in Japanese Patent Laid-Open No. 2003-222999.

[0003] Japanese Patent Application Laid-Open No. 2004-55898

[0004] The present disclosure provides techniques for patterning films, such as metal compound films.

[0005] In one exemplary embodiment of the present disclosure, there is provided a processing method including: (a) preparing a substrate having an underlayer, the substrate having a first region; (b) forming a metal compound film supported by a support member and having a predetermined pattern on the underlayer in the first region; and (c) removing the support member to form the metal compound film having the predetermined pattern in the first region on the underlayer.

[0006] According to one exemplary embodiment of the present disclosure, a technique for patterning a film such as a metal compound film can be provided.

[0007] FIG. 1 is a diagram for explaining an example of the configuration of a plasma processing system. FIG. 1 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus. FIG. 2 is a diagram showing an example of the cross-sectional structure of a substrate W. FIG. 3 is a flowchart showing an example of a processing method of the present disclosure. FIG. 4 is a diagram showing the cross-sectional structure of a substrate W in a first example of the processing method. FIG. 5 is a diagram showing the cross-sectional structure of a substrate W in the first example of the processing method. FIG. 6 is a diagram showing the cross-sectional structure of a substrate W in the first example of the processing method. FIG. 7 is a diagram showing the cross-sectional structure of a substrate W in the first example of the processing method. FIG. 8 is a diagram showing the cross-sectional structure of a substrate W in the second example of the processing method. FIG. 9 is a diagram showing the cross-sectional structure of a substrate W in the second example of the processing method. FIG. 10 is a diagram showing the cross-sectional structure of a substrate W in the second example of the processing method. FIG. 11 is a diagram showing the cross-sectional structure of a substrate W in the third example of the processing method. FIG. 12 is a diagram showing the cross-sectional structure of a substrate W in the third example of the processing method. FIG. 13 is a diagram showing the cross-sectional structure of a substrate W in the third example of the processing method. FIG. 14 is a diagram showing the cross-sectional structure of a substrate W in the third example of the processing method. FIG. 15 is a diagram showing the cross-sectional structure of a substrate W in the third example of the processing method. FIG. 10 is a diagram showing a cross-sectional structure of a substrate W in a fourth example of the present processing method. FIG. 11 is a diagram showing a cross-sectional structure of a substrate W in a fourth example of the present processing method. FIG. 12 is a flowchart showing a fifth example of the present processing method. FIG. 13 is a diagram showing a cross-sectional structure of a substrate W in a fifth example of the present processing method. FIG. 14 is a diagram showing a cross-sectional structure of a substrate W in a fifth example of the present processing method. FIG. 15 is a diagram showing a cross-sectional structure of a substrate W in a fifth example of the present processing method.

[0008] Hereinafter, each embodiment of the present disclosure will be described.

[0009] In one exemplary embodiment, a processing method includes: (a) preparing a substrate having an underlayer, the substrate having a first region; (b) forming a metal compound film having a predetermined pattern supported by a support member on the underlayer in the first region; and (c) removing the support member to form a metal compound film having the predetermined pattern in the first region on the underlayer.

[0010] In one exemplary embodiment, the metal compound film includes one or both of an organometallic compound and an inorganic metal compound.

[0011] In one exemplary embodiment, the organometallic compound is an organometallic complex, an organometallic compound salt, or a metal alkoxide.

[0012] In one exemplary embodiment, the organometallic compound comprises at least one metal selected from the group consisting of alkaline earth metals, transition metals, and zinc group elements.

[0013] In one exemplary embodiment, the organometallic compound is at least one selected from the group consisting of a magnesium complex, a magnesium alkoxide, a zinc complex, a zinc alkoxide, and an organic acid metal salt.

[0014] In one exemplary embodiment, the inorganic metal compound is at least one selected from the group consisting of metal oxides and inorganic metal salts.

[0015] In one exemplary embodiment, the inorganic metal compound comprises at least one metal selected from the group consisting of alkaline earth metals, transition metals, and zinc group elements.

[0016] In one exemplary embodiment, the metal oxide comprises magnesium oxide (MgO).

[0017] In one exemplary embodiment, the inorganic metal salt is magnesium carbonate (MgCO ３ ), magnesium chloride (MgCl ２ ) or magnesium hydroxide (Mg(OH) ２ )

[0018] In one exemplary embodiment, the substrate further has a second region adjacent to the first region, and (b) includes: (b-a) forming a support member on the undercoat film in the second region, the support member having a side that defines the boundary between the first region and the second region; and (b-b) forming a metal compound on the undercoat film in the first region so as to contact the side of the support member; and (c) removing the support member formed in the second region.

[0019] In one exemplary embodiment, (bb) includes forming a metal compound film on the underlayer in the first region so that a portion of the sidewall is exposed, and forming a metal compound film on the support member, and (c) includes removing the support member to remove the metal compound film formed on the support member.

[0020] In one exemplary embodiment, the support member is a photoresist film.

[0021] In one exemplary embodiment, (b) includes a step of preparing a support member having a metal compound film having a predetermined pattern formed on its surface, and a step of bonding the support member and the metal compound film together so that the metal compound film contacts the substrate in a first region, and (c) includes a step of removing the support member and transferring the metal compound film to the first region of the substrate.

[0022] In one exemplary embodiment, (b) includes a step of preparing the support member, the support member having a reverse pattern formed on its surface, which is an inverse of a predetermined pattern; a step of forming a metal compound film on an undercoat film of a substrate; and a step of pressing the reverse pattern formed on the support member against the metal compound film formed on the substrate, thereby forming the metal compound film into the predetermined pattern using the support member.

[0023] In one exemplary embodiment, the method includes: (a) preparing a substrate having an underlayer film, the substrate having a first region and a second region adjacent to the first region; (b) forming a metal compound film having a predetermined pattern on the underlayer film in the first region; (c) forming a patterned film on the underlayer film in the second region; and (d) removing the metal compound film so that the patterned film remains on the underlayer film.

[0024] In one exemplary embodiment, (c) includes forming a patterned film on the metal compound film.

[0025] In one exemplary embodiment, the second region is surrounded by the first region.

[0026] In one exemplary embodiment, the method further includes the step of etching the underlayer using the metal compound film having a predetermined pattern as a mask.

[0027] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are designated by the same reference numerals, and redundant explanations will be omitted. Unless otherwise specified, the positional relationships, such as up, down, left, and right, will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0028] <Example of Plasma Processing System> FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0029] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma generated in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0030] <Example of CCP Plasma Processing Apparatus> FIG. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0031] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0032] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0033] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0034] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0035] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0036] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0037] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0038] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0039] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0040] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0041] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0042] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0043] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0044] <Example of Substrate W> Figure 3 is a diagram showing an example of the cross-sectional structure of a substrate W. The substrate W is an example of a substrate to which the present processing method can be applied. The substrate W has a base film BF and an undercoat film UF. The undercoat film UF is formed on the base film BF. The undercoat film UF and / or the base film BF may be an organic film, a dielectric film, a metal film, a semiconductor film, etc. formed on a silicon wafer. The base film BF may also be a silicon wafer. The undercoat film UF and / or the base film BF may also be configured by stacking multiple films.

[0045] The underlayer UF may be a carbon-containing film or a silicon-containing film. The carbon-containing film may be, for example, an amorphous carbon film or a spin-on carbon (SOC) film. The silicon-containing film may be a dielectric film containing silicon (Si). The silicon-containing film may include a silicon oxide film or a silicon nitride film.

[0046] The substrate W has one or more first regions RE1 and one or more second regions RE2. The first regions RE1 and the second regions RE2 each have a predetermined pattern in a plan view of the substrate W. The plan view of the substrate W is a state in which the substrate W is viewed from above the substrate W in FIG. 3. The substrate W may have one first region RE1 and multiple second regions RE2. Alternatively, the substrate W may have multiple first regions RE1 and one second region RE2. In the example shown in FIG. 3, the substrate W has one first region RE1 and multiple second regions RE2. In the example shown in FIG. 3, each of the multiple second regions RE2 has a circular shape. Also, in the example shown in FIG. 3, one first region RE1 has a shape that surrounds each of the multiple second regions RE2. The plurality of first regions RE1 shown in FIG. 3 are connected to one another when the substrate W is seen in a plan view.

[0047] 4 is a flowchart illustrating an example of a processing method (also referred to as "the processing method") according to the present disclosure. As an example, the processing method may be a method for forming a film having a predetermined pattern. The film may function as a mask in plasma etching.

[0048] This processing method includes a step of preparing a substrate (ST1), a step of preparing a metal compound film (ST2), a step of removing a support member (ST3), and a step of etching an undercoat film UF (ST4). Parts of this processing method can be performed on a substrate W using, for example, the plasma processing system and plasma processing apparatus 1 shown in FIGS. 1 and 2. An example of performing this processing method shown in FIG. 4 will be described below with reference to the respective figures. Note that the plasma processing included in each example of this processing method may be performed by the control unit 2 shown in FIGS. 1 and 2 controlling each component of the plasma processing apparatus 1 shown in FIG. 2.

[0049] <First Example of Present Processing Method> Figures 5A to 5D are views showing the cross-sectional structure of a substrate W in a first example of the present processing method. Figures 5A and 5B are views showing the cross-sectional structure of a substrate W after process ST2 has been performed on a substrate W (see Figure 3) prepared in process ST1. Figure 5C is a view showing the cross-sectional structure of a substrate W after process ST3 has been performed. Figure 5D is a view showing the cross-sectional structure of a substrate W after process ST4 has been performed. Hereinafter, an example of the present processing method will be described with reference to Figures 4 and 5.

[0050] <Step ST1: Preparation of Substrate> In step ST1, a substrate W having an undercoat film UF as shown in Fig. 3 is prepared. The undercoat film UF is formed on the base film BF by any film formation method. The film formation method may be a CVD method, a PVD method, a spin coating method, or the like.

[0051] <Step ST2: Formation of Metal Compound Film> In step ST2, a support member SF and a metal compound film MF are formed. First, as shown in FIG. 5A , a support member SF is formed. The support member SF is formed in a second region RE2 on the base film UF. The support member SF is a member that supports the metal compound film MF during the formation of the metal compound film MF. As an example, the support member SF may be a photoresist film. In this example, the support member SF is formed in each of the multiple second regions RE2 on the base film UF. A space SP exists between the multiple support members SF. The space SP may be defined by the side surface SS of the support member SF and the base film UF.

[0052] Next, as shown in FIG. 5B, a metal compound film MF is formed. The metal compound film MF is formed in a first region RE1 on the base film UF. As an example, the metal compound film MF is formed by spin coating. The metal compound film MF can be formed so as to fill the spaces SP present between the multiple support members SF. The metal compound film MF may be formed so as to fill a portion of the spaces SP, as shown in FIG. 5B. Alternatively, the metal compound film MF may be formed so as to fill the entire spaces SP. In other words, the metal compound film MF may be formed so that its surface is flush with the surfaces of the support members SF.

[0053] The metal compound film MF may include an organic metal compound and / or an inorganic metal compound. The metal compound film MF may be a mixture of an organic metal compound and an inorganic metal compound. The metal compound film MF may also be formed from a viscous material.

[0054] The organometallic compound may be an organometallic complex, an organometallic compound salt, or a metal alkoxide. The organometallic compound may contain at least one metal selected from the group consisting of alkaline earth metals, transition metals, and zinc-group elements. The organometallic compound may also be at least one selected from the group consisting of a magnesium complex, a zinc complex, an organic acid metal salt, a magnesium alkoxide, and a zinc alkoxide. The organic acid metal salt may include magnesium acetate, magnesium gluconate, and magnesium acrylate.

[0055] The inorganic metal compound may be at least one selected from the group consisting of metal oxides and inorganic metal salts. The metal oxide may be magnesium oxide (MgO). The inorganic metal salt may include a carbonate or a chloride and a hydroxide. For example, the inorganic metal salt may be magnesium carbonate (MgCO ３ ), magnesium chloride (MgCl ２ ) or magnesium hydroxide (Mg(OH) ２ The inorganic metal compound may contain at least one metal selected from the group consisting of alkaline earth metals and transition metals. The metal contained in the organometallic compound and / or the inorganic metal compound may be magnesium (Mg), zinc (Zn), yttrium (Y), nickel (Ni), titanium (Ti), iron (Fe), and aluminum (Al).

[0056] <Step ST3: Removal of Support Member SF> In step ST3, the support member SF is removed. The support member SF may be removed by dry etching such as plasma etching, wet etching, or the like. The metal compound film MF may have higher resistance to an etchant used to remove the support member SF than the support member SF. That is, the etching rate of the support member SF using the etchant may be higher than that of the metal compound film MF. The ratio of the etching rate of the support member SF to the etching rate of the metal compound film MF using the etchant may be 10 or more, 20 or more, 30 or more, 40 or more, or 50 or more. As an example, when the metal compound film MF is a film containing MgO and the support member SF is a photoresist, the support member SF may be etched by etching with oxygen (O ２ The metal may be removed by a plasma generated from a process gas containing .

[0057] In step ST3, when the support member SF is removed, an opening OP is formed in the second region RE2. The opening OP is a space defined by the side surface of the metal compound film MF and the base film UF. That is, the base film UF is exposed at the bottom of the opening OP.

[0058] <Step ST4: Etching of Underlayer> In step ST4, the underlayer UF is etched. The underlayer UF is etched using the metal compound film MF as a mask. The underlayer UF may be etched by plasma etching. When the underlayer UF is etched, a recess RC is formed in the underlayer UF.

[0059] <Second Example of Present Processing Method> Figures 6A to 6D are views showing the cross-sectional structure of a substrate W in a second example of the present processing method. Figures 6A and 6B are views showing the cross-sectional structure of a substrate W after process ST2 has been performed on a substrate W (see Figure 3) prepared in process ST1. Figure 6C is a view showing the cross-sectional structure of a substrate W after process ST3 has been performed. Figure 6D is a view showing the cross-sectional structure of a substrate W after process ST4 has been performed. Hereinafter, the second example of the present processing method will be described with reference to Figures 4 and 6.

[0060] The second example of this processing method differs from the first example shown in FIG. 5 in step ST2. In step ST2 of the second example, the metal compound film MF is formed on the support member SF in the second region RE2 in addition to the first region RE1, as shown in FIG. 6B . In step ST2, the metal compound film MF is formed on the base film UF in the first region RE1 so that a portion of the side surface SS of the support member SF is exposed. Then, in step ST3, when the support member SF is removed, the metal compound film MF formed on the support member SF is also lifted off and removed.

[0061] <Third Example of Present Processing Method> Figures 7A to 7D are views showing the cross-sectional structure of a substrate W in a third example of the present processing method. Figure 7A is a view showing the step of preparing a support member SF in step ST2. Figure 7B is a view showing the cross-sectional structure of a substrate W prepared in step ST1 (see Figure 3) after step ST2 has been performed. Figure 7C is a view showing the cross-sectional structure of a substrate W after step ST3 has been performed. Figure 7D is a view showing the cross-sectional structure of a substrate W after step ST4 has been performed. Hereinafter, the third example of the present processing method will be described with reference to Figures 4 and 7.

[0062] The third example of this processing method differs from the first example in that the metal compound film MF is formed on the base film UF by transfer. In step ST2 of the third example, first, a support member SF is prepared, as shown in FIG. 7A . The support member SF has a first region RE1 and a second region RE2 corresponding to the first region RE1 and the second region RE2 of the substrate W. Furthermore, the metal compound film MF is formed on the surface of the support member SF in the first region RE1. As an example, the support member SF contains polypropylene.

[0063] Next, as shown in FIG. 7B , the support member SF is bonded to the substrate W. Specifically, first, the support member SF and the substrate W are aligned so that the first region RE1 and the second region RE2 of the support member SF coincide with the first region RE1 and the second region RE2 of the substrate W. Then, the support member SF is bonded to the substrate W so that the metal compound film MF arranged on the support member SF contacts the base film UF arranged on the substrate W. As a result, the metal compound film MF is bonded to the base film UF in the first region RE1 of the substrate W. Furthermore, in the second region RE2 of the substrate W, a space SP exists between the support member SF and the substrate W. Then, in step ST3, the support member SF is removed, and the metal compound film MF is transferred onto the base film UF as shown in FIG. 7C .

[0064] <Fourth Example of Present Processing Method> Figures 8A to 8D are views showing the cross-sectional structure of a substrate W in a fourth example of the present processing method. Figures 8A and 8B are views showing the cross-sectional structure of a substrate W after process ST2 has been performed on the substrate W (see Figure 3) prepared in process ST1. Figure 8C is a view showing the cross-sectional structure of the substrate W after process ST3 has been performed. Figure 8D is a view showing the cross-sectional structure of the substrate W after process ST4 has been performed. Hereinafter, the fourth example of the present processing method will be described with reference to Figures 4 and 8.

[0065] The fourth example of the present processing method differs from the first example in that the metal compound film MF is formed on the base film UF by embossing. In step ST2 of the fourth example, first, as shown in FIG. 8A, the metal compound film MF is formed on the base film UF. The metal compound film MF is formed on the base film UF from the first region RE1 to the second region RE2. The metal compound film MF may be formed on the entire surface of the base film UF.

[0066] 8B , the support member SF is pressed against the metal compound film MF. The support member SF has projections and depressions on its surface corresponding to the first region RE1 and the second region RE2 of the substrate W. Specifically, the support member SF has recesses CC in the first region RE1 and projections CV in the second region RE2. As an example, the support member SF contains polypropylene.

[0067] When the support member SF presses the metal compound film MF, the portion of the metal compound film MF present in the second region RE2 is pressed by the convex portions CV of the support member SF. As a result, the portion of the metal compound film MF present in the second region RE2 is pushed out to other regions. Meanwhile, the portion of the metal compound film MF present in the first region RE1 is supported by the support member SF at the concave portions CC of the support member SF. Then, when the support member SF is removed in step ST3, the metal compound film MF is formed in the first region RE1 on the base film UF, as shown in FIG. 8C . As a result, an inverted pattern of the pattern on the support member SF can be transferred to the metal compound film MF. The pattern on the support member SF may be a pattern formed by the concave portions CC and the convex portions CV on the surface of the support member SF.

[0068] <Fifth Example of the Present Processing Method> Fig. 9 is a flowchart showing a fifth example of the present processing method. Figs. 10A to 10D are views showing the cross-sectional structure of a substrate W in the fifth example of the present processing method. Figs. 10A and 10B are views showing the cross-sectional structure of a substrate W after process ST2 has been performed on a substrate W (see Fig. 3) prepared in process ST1. Fig. 10C is a view showing the cross-sectional structure of a substrate W after process ST3 has been performed. Fig. 10D is a view showing the cross-sectional structure of a substrate W after process ST4 has been performed. Hereinafter, the fifth example of the present processing method will be described with reference to Figs. 4 and 10.

[0069] The fifth example of the present processing method differs from the second example in that a metal compound film MF is formed in the second region RE2 and a pattern film DF is formed in the first region RE1. The pattern film DF is a film having an arbitrary pattern. The pattern film DF may be formed of an arbitrary material. In FIG. 10C, the etching rate of the etchant for removing the metal compound film MF may be higher for the metal compound film MF than for the pattern film DF. As an example, the metal compound film MF is an MgO film, and the etchant is H ２ It may be O.

[0070] In step ST2 of the fifth example, first, as shown in Fig. 10A, a metal compound film MF is formed on the base film UF in the second region RE2. Next, as shown in Fig. 10B, a pattern film DF is formed on the metal compound film MF in the second region RE2 and on the base film UF in the first region RE1. Then, in step ST3, when the metal compound film MF is removed, as shown in Fig. 10C, a pattern film DF is formed in the first region RE1 on the base film UF.

[0071] According to this processing method, a film such as a metal compound film can be patterned into any desired pattern. For example, even if the film is difficult to etch, the film can be patterned by lifting off the support member.

[0072] The above embodiments have been described for illustrative purposes and various modifications may be made without departing from the scope and spirit of the present disclosure.

[0073] BF...base film, CC...recess, CV...protrusion, DF...pattern film, MF...metal compound film, OP...opening, RC...recess, RE1...first region, RE2...second region, SF...support member, SP...space, SS...side surface, UF...undercoat film

Claims

1. A processing method comprising: (a) preparing a substrate having an underlayer, the substrate having a first region; (b) forming a metal compound film having a predetermined pattern on the underlayer in the first region, the metal compound film being supported by a support member; and (c) removing the support member to form the metal compound film having the predetermined pattern in the first region on the underlayer.

2. The processing method according to claim 1, wherein the metal compound film contains one or both of an organic metal compound and an inorganic metal compound.

3. The treatment method according to claim 2, wherein the organometallic compound is an organometallic complex, an organometallic compound salt, or a metal alkoxide.

4. The treatment method according to claim 2 or 3, wherein the organometallic compound contains at least one metal selected from the group consisting of alkaline earth metals, transition metals and zinc group elements.

5. The treatment method according to claim 3, wherein the organometallic compound is at least one selected from the group consisting of magnesium complexes, zinc complexes, organic acid metal salts, magnesium alkoxides, and zinc alkoxides.

6. The treatment method according to claim 2, wherein the inorganic metal compound is at least one selected from the group consisting of metal oxides and inorganic metal salts.

7. The treatment method according to claim 2 or 6, wherein the inorganic metal compound contains at least one metal selected from the group consisting of alkaline earth metals, transition metals, and zinc group elements.

8. The method of claim 6, wherein the metal oxide comprises magnesium oxide (MgO).

9. The inorganic metal salt is magnesium carbonate (MgCO ３ ), magnesium chloride (MgCl ２ ) or magnesium hydroxide (Mg(OH) ２ 7. The method of claim 6, wherein 10. A processing method according to any one of claims 1 to 9, wherein the substrate further has a second region adjacent to the first region, and (b) comprises: (b-a) forming the support member having a side surface that defines the boundary between the first region and the second region on the base film in the second region; and (b-b) forming the metal compound on the base film in the first region so as to contact the side surface of the support member, and (c) comprises removing the support member formed in the second region.

11. The processing method according to claim 10, wherein (b-b) includes: forming the metal compound film on the base film in the first region so that a portion of the side surface is exposed; and forming the metal compound film on the support member; and (c) includes removing the support member and removing the metal compound film formed on the support member.

12. The processing method according to claim 10 or 11, wherein the support member is a photoresist film.

13. A processing method according to any one of claims 1 to 9, wherein (b) comprises the steps of: preparing the support member on whose surface the metal compound film having the predetermined pattern is formed; and bonding the base film and the metal compound film together so that the metal compound film contacts the base film in the first region; and (c) comprises removing the support member and transferring the metal compound film to the first region of the substrate.

14. The processing method according to any one of claims 1 to 9, wherein (b) comprises the steps of: preparing the support member, the support member having a surface on which an inverted pattern that is an inverted version of the predetermined pattern is formed; forming a metal compound film on the base film of the substrate; and pressing the inverted pattern formed on the support member against the metal compound film formed on the substrate, thereby forming the metal compound film into the predetermined pattern using the support member.

15. A processing method comprising: (a) preparing a substrate having an underlayer, the substrate having a first region and a second region adjacent to the first region; (b) forming a metal compound film having a predetermined pattern on the underlayer in the first region; (c) forming a pattern film on the underlayer in the second region; and (d) removing the metal compound film so that the pattern film remains on the underlayer.

16. The processing method of claim 15, wherein (c) includes forming the patterned film on the metal compound film.

17. A method according to any one of claims 1 to 16, wherein the first region surrounds the second region.

18. The processing method according to any one of claims 1 to 17, further comprising the step of etching the base film using the metal compound film having the predetermined pattern as a mask.

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