Substrate treating apparatus and substrate treating method

Abstract

This substrate treating apparatus has a treatment-fluid nozzle, a standby unit, and a control unit. The treatment-fluid nozzle sprays treatment fluid onto a substrate. The standby unit puts the treatment-fluid nozzle on standby. The control unit executes, on a plurality of substrates and in accordance with recipe information containing conditions relating to the treatment fluid, a fluid treatment process in which the treatment fluid is sprayed from the treatment-fluid nozzle onto the substrates. The control unit, prior to starting a fluid treatment process subsequent to an execution-completed fluid treatment process, determines whether conditions relating to the treatment fluid in the recipe information differ between the subsequent fluid treatment process and the execution-completed fluid treatment process. The control unit, if conditions relating to the treatment fluid differ, executes a dummy dispensing process in which the treatment fluid that is utilized in the subsequent fluid treatment process is sprayed on the standby unit from the treatment-fluid nozzle.

Description

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

[0002] Conventionally, in a substrate processing apparatus that performs liquid processing on substrates such as semiconductor wafers (hereinafter also referred to as wafers), a technique is known in which, before starting the liquid processing, a nozzle for discharging the processing liquid onto the substrate is placed on standby in a standby section to perform a dummy dispensing process of the processing liquid.

[0003] JP 2017-11033 A

[0004] The present disclosure provides a technique capable of suppressing a decrease in throughput due to the execution of a pre-dispense process.

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a processing liquid nozzle, a standby unit, and a control unit. The processing liquid nozzle discharges a processing liquid onto a substrate. The standby unit keeps the processing liquid nozzle on standby. The control unit performs a liquid process on a plurality of substrates by discharging a processing liquid from the processing liquid nozzle onto the substrate in accordance with recipe information including conditions related to the processing liquid. Before starting a liquid process next to a liquid process that has already been performed, the control unit determines whether conditions related to the processing liquid in the recipe information differ between the next liquid process and the previously performed liquid process. If the conditions related to the processing liquid differ, the control unit performs a dummy dispense process in which the processing liquid to be used for the next liquid process is discharged from the processing liquid nozzle to the standby unit.

[0006] According to the present disclosure, it is possible to suppress a decrease in throughput due to the execution of a pre-dispense process.

[0007] Fig. 1 is a diagram showing a schematic configuration of a substrate processing system according to an embodiment. Fig. 2 is a diagram showing a schematic configuration of a processing unit according to an embodiment. Fig. 3 is a flowchart showing an example of a procedure for liquid processing performed by the substrate processing system according to an embodiment. Fig. 4 is a flowchart showing an example of a procedure for processing performed between repeated liquid processings performed by the substrate processing system according to an embodiment. Fig. 5 is a flowchart showing another example of a procedure for processing performed between repeated liquid processings performed by the substrate processing system according to an embodiment.

[0008] Hereinafter, embodiments (hereinafter referred to as "embodiments") for carrying out a substrate processing apparatus and a substrate processing method according to the present disclosure will be described in detail with reference to the drawings. Note that the present disclosure is not limited to these embodiments. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of elements may differ from reality. Furthermore, the dimensional relationships and ratios may differ between the drawings.

[0009] In a conventional substrate processing apparatus for liquid processing of substrates such as semiconductor wafers (hereinafter also referred to as wafers), a technique is known in which a nozzle for discharging a processing liquid is placed in a waiting section to perform a dummy dispense process before starting the liquid processing. Such a dummy dispense process is performed every time before starting the next liquid processing, for the purpose of avoiding problems caused by discharging processing liquid remaining in the nozzle onto the wafer.

[0010] However, if a dummy dispense process is performed every time a liquid process is performed and the conditions, such as the type of processing liquid, are the same between the previous liquid process and the next liquid process, unnecessary processing liquid is discharged, which increases the period during which no liquid process is performed, and this may result in a decrease in throughput (the number of substrates processed per unit time).

[0011] Therefore, it is expected that the decrease in throughput due to the execution of the pre-dispense process will be suppressed.

[0012] <Configuration of Substrate Processing System> First, the configuration of a substrate processing system 1 according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing a schematic configuration of the substrate processing system 1 according to an embodiment. Note that the substrate processing system 1 is an example of a substrate processing apparatus. In the following, to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is defined as the vertically upward direction.

[0013] 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0014] The loading / unloading station 2 includes a carrier placement unit 11 and a transport unit 12. A plurality of carriers C are placed on the carrier placement unit 11, each of which accommodates a plurality of substrates, in this embodiment, semiconductor wafers W (hereinafter referred to as wafers W), in a horizontal position.

[0015] The transfer section 12 is provided adjacent to the carrier placement section 11 and includes a substrate transfer device 13 and a transfer section 14. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 13 is capable of moving horizontally and vertically and rotating about a vertical axis, and transfers the wafer W between the carrier C and the transfer section 14 using the wafer holding mechanism.

[0016] The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on both sides of the transport section 15.

[0017] The transfer section 15 includes a substrate transfer device 17 therein. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the delivery section 14 and the processing unit 16 using the wafer holding mechanism.

[0018] The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17 .

[0019] The substrate processing system 1 also includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs that control various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0020] The program may be recorded on a computer-readable storage medium and installed from the storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[0021] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 in the loading / unloading station 2 removes the wafer W from the carrier C placed on the carrier placement unit 11 and places the removed wafer W on the transfer unit 14. The wafer W placed on the transfer unit 14 is then removed from the transfer unit 14 by the substrate transfer device 17 in the processing station 3 and carried into the processing unit 16.

[0022] The wafer W carried into the processing unit 16 is processed by the processing unit 16, and then carried out of the processing unit 16 by the substrate transfer device 17 and placed on the transfer section 14. Then, the processed wafer W placed on the transfer section 14 is returned to the carrier C on the carrier placement section 11 by the substrate transfer device 13.

[0023] The control unit 18 of the control device 4 includes a microcomputer and various circuits that have a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, etc. The CPU of the microcomputer reads and executes programs stored in the ROM to realize the control described below.

[0024] The program may be recorded on a computer-readable recording medium and installed from the recording medium into the storage unit 19 of the control device 4. Examples of computer-readable recording media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[0025] The storage unit 19 of the control device 4 is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.

[0026] <Configuration of Processing Unit> Next, the configuration of the processing unit 16 will be described with reference to Fig. 2. Fig. 2 is a diagram showing a schematic configuration of the processing unit 16 according to the embodiment.

[0027] As shown in FIG. 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing liquid supply unit 40, a back surface supply unit 50, a collection cup 60, and a standby unit 70.

[0028] The chamber 20 accommodates a substrate holding mechanism 30, a processing liquid supply unit 40, a backside supply unit 50, a collection cup 60, and a standby unit 70. A fan filter unit (FFU) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a downflow within the chamber 20.

[0029] The substrate holding mechanism 30 includes a holding unit 31, a support unit 32, and a drive unit 33. The holding unit 31 is provided approximately in the center of the chamber 20. A holding member 311 that holds the wafer W from the side is provided on the upper surface of the holding unit 31. The wafer W is held horizontally by the holding member 311 while being slightly spaced apart from the upper surface of the holding unit 31. The support unit 32 is a member that extends vertically, and its base end is rotatably supported by the drive unit 33, with its tip end supporting the holding unit 31 horizontally. The drive unit 33 is configured to include, for example, a motor, and rotates the support unit 32 around a vertical axis.

[0030] The substrate holding mechanism 30 rotates the support part 32 using the drive part 33 to rotate the holding part 31 supported by the support part 32, thereby rotating the wafer W held by the holding part 31.

[0031] The processing liquid supply unit 40 supplies various processing liquids to the upper surface (front surface) of the wafer W. The processing liquid supply unit 40 supplies a two-fluid mixture (mixed fluid) to the wafer W. The mixed fluid is a fluid obtained by mixing N2 gas, which is a gas, with SC1 (a mixed liquid of ammonia, hydrogen peroxide, and water) or DIW (pure water), which is a processing liquid. Note that the processing liquid used as the mixed fluid is not limited to SC1 or DIW, and the gas used as the mixed fluid is not limited to N2 gas. For example, functional water (ammonia water or ozone water) is used as the processing liquid, and argon gas is used as the gas.

[0032] The processing liquid supply unit 40 includes a processing liquid nozzle 41 that discharges the processing liquid, an arm 42 that horizontally supports the processing liquid nozzle 41, and a moving mechanism 43 that rotates and raises and lowers the arm 42.

[0033] An SC1 supply source 71 and a DIW supply source 72 are connected to the processing liquid nozzle 41 via a switching valve 44a and a flow rate regulator 45a. The switching valve 44a connects either the SC1 supply source 71 or the DIW supply source 72 to the processing liquid nozzle 41, and supplies SC1 or DIW to the processing liquid nozzle 41. An N2 gas supply source 73 is also connected to the processing liquid nozzle 41 via an opening / closing valve 44b and a flow rate regulator 45b. The processing liquid nozzle 41 is a two-fluid nozzle, and ejects a mixed fluid of SC1 or DIW and N2 gas onto the front surface of the wafer W.

[0034] The back surface supply unit 50 supplies various other processing liquids to the lower surface (back surface) of the wafer W. The other processing liquids are SC1 or DIW. The back surface supply unit 50 is inserted through the hollow portions of the holder 31 and the support 32. A flow path extending vertically is formed inside the back surface supply unit 50.

[0035] A supply path 51 for supplying SC1 or DIW to the backside supply unit 50 is connected to the flow path of the backside supply unit 50. One end of the supply path 51 is connected to an SC1 supply source 81 and a DIW supply source 82 via a switching valve 54c, and the other end is connected to the backside supply unit 50. The supply path 51 is provided with, in order from the SC1 supply source 81 and the DIW supply source 82 side, a switching valve 54c, a flow rate regulator 55c, and an opening / closing valve 56. The switching valve 54c connects either the SC1 supply source 81 or the DIW supply source 82 to the backside supply unit 50, and supplies SC1 or DIW to the backside supply unit 50. The backside supply unit 50 ejects SC1 or DIW onto the backside of the wafer W. The backside supply unit 50 is an example of a backside nozzle.

[0036] The on-off valve 56 switches between supplying SC1 or DIW to the backside supply unit 50. When the on-off valve 56 is opened, SC1 or DIW is supplied to the backside supply unit 50, and SC1 or DIW is discharged from the backside supply unit 50. When the on-off valve 56 is closed, SC1 and DIW are not supplied to the backside supply unit 50, and SC1 and DIW are not discharged from the backside supply unit 50. The opening and closing of the on-off valve 56 is controlled by the control device 4.

[0037] A drain path 57 for discharging SC1 or DIW to the outside branches off from the supply path 51. The drain path 57 branches off from the supply path 51 at a branch point 51a provided between the flow rate regulator 55c and the on-off valve 56. An on-off valve 58 is provided in the drain path 57.

[0038] The on-off valve 58 switches between allowing and not allowing the flow of SC1 or DIW through the drainage path 57. When the on-off valve 58 is open, the SC1 or DIW flows from the supply path 51 to the drainage path 57 and is discharged to the outside. When the on-off valve 58 is closed, the SC1 or DIW does not flow through the drainage path 57. The opening and closing of the on-off valve 58 is controlled by the control device 4.

[0039] Each of the on-off valves 56 and 58 (an example of a switching unit) switches the inflow destination of another processing liquid, SC1 or DIW, to the drain path 57 or the supply path 51 on the backside supply unit 50 side from the branch point 51a.

[0040] Collection cup 60 is disposed to surround holder 31, and collects the processing liquid scattered from wafer W due to the rotation of holder 31. A drain port 61 is formed in the bottom of collection cup 60, and the processing liquid collected by collection cup 60 is discharged from drain port 61 to the outside of processing unit 16. In addition, an exhaust port 62 is formed in the bottom of collection cup 60, which discharges gas supplied from FFU 21 to the outside of processing unit 16.

[0041] The standby unit 70 causes the processing liquid nozzle 41 to wait when the processing liquid nozzle 41 is not discharging the processing liquid onto the wafer W. Then, when the processing liquid nozzle 41 waits in the standby unit 70, a dummy dispensing process is performed.

[0042] The dummy dispensing process is a process in which the processing liquid is appropriately discharged from the processing liquid nozzle 41 during standby when the processing liquid is not being discharged onto the wafer W, in order to avoid problems caused by the processing liquid remaining in the processing liquid nozzle 41 being discharged onto the wafer W. The processing liquid discharged from the processing liquid nozzle 41 is discharged to the outside through the discharge path 75.

[0043] Here, the storage unit 19 of the control device 4 stores recipe information 191. The recipe information 191 is information in which each processing condition of the liquid processing performed by the processing unit 16 is registered in the order of the processing sequence. Specifically, the recipe information 191 includes conditions related to the processing liquid. Examples of the conditions related to the processing liquid included in the recipe information 191 include the type of processing liquid, the temperature of the processing liquid, and the mixing ratio of the processing liquid and gas in the mixed fluid. The control unit 18 controls the substrate processing system 1 in accordance with the recipe information 191 to perform the liquid processing.

[0044] <Contents of Liquid Processing> Next, the contents of the liquid processing performed in the substrate processing system 1 will be described with reference to Fig. 3. Fig. 3 is a flowchart showing an example of the procedure of the liquid processing performed by the substrate processing system 1 according to the embodiment.

[0045] As shown in FIG. 3, the control unit 18 first loads the wafer W into the processing unit 16 (step S101), and holds the loaded wafer W using the holding member 311 of the substrate holding mechanism 30.

[0046] Next, the control unit 18 controls the processing liquid supply unit 40 and the like to discharge the processing liquid (here, a mixed fluid of SC1 or DIW and N2 gas) onto the front surface of the wafer W from the processing liquid nozzle 41 (step S102).Then, the control unit 18 controls the rinse liquid supply unit (not shown) and the like to rinse the front surface of the wafer W to which the processing liquid has been supplied (step S103).

[0047] Next, the control unit 18 controls the back surface supply unit 50 and the like to discharge another processing liquid (here, SC1 or DIW) from the back surface supply unit 50 onto the back surface of the wafer W (step S104).Then, the control unit 18 controls the rinse liquid supply unit (not shown) and the like to rinse the back surface of the wafer W to which the other processing liquid has been supplied (step S105).Then, the control unit 18 controls the substrate holding mechanism 30 and the like to perform a drying process on the wafer W by spin drying (step S106).

[0048] Finally, the control unit 18 unloads the dried wafer W from the processing unit 16 (step S107), completing the series of liquid processing steps for one wafer W.

[0049] The control unit 18 repeatedly performs the above-described liquid processing on a plurality of wafers W. Here, if the conditions, such as the type of processing liquid, between the previously performed liquid processing and the next liquid processing are the same, performing the above-described dummy dispensing process each time results in the dispensing of processing liquid, which is essentially unnecessary. This results in a longer period during which no liquid processing is performed, which may reduce throughput (the number of wafers W processed per unit time).

[0050] Therefore, in the substrate processing system 1 according to the embodiment, it is determined whether or not the conditions related to the processing liquid differ between the liquid processes that are repeatedly executed, and based on the determination result, the dummy dispensing process is executed in a limited manner. This point will be specifically described below.

[0051] <Contents of Processing Performed During Repeated Liquid Processing> Contents of processing performed during repeated liquid processing in the substrate processing system 1 will be described with reference to Figures 4 and 5. Figure 4 is a flowchart showing an example of a procedure of processing performed during repeated liquid processing by the substrate processing system 1 according to the embodiment.

[0052] As shown in FIG. 4, the control unit 18 waits until the timing to start the next liquid treatment following the liquid treatment that has already been performed arrives (step S201, No).

[0053] When the time has come to start the next liquid processing (step S201, Yes), the control unit 18 determines whether the conditions regarding the processing liquid in the recipe information 191 differ between the next liquid processing and the liquid processing that has already been performed (step S202).

[0054] For example, the control unit 18 refers to the recipe information 191 to determine whether at least one of the type, temperature, and mixing ratio of the processing liquid differs between the next liquid process and the previously executed liquid process. For example, if the processing liquid to be used in the next liquid process is DIW and the processing liquid used in the previously executed liquid process is SC1, it is determined that the types of processing liquid differ between the next liquid process and the previously executed liquid process. On the other hand, if the processing liquid to be used in the next liquid process is DIW and the processing liquid used in the previously executed liquid process is also DIW, it is determined that the types of processing liquid do not differ between the next liquid process and the previously executed liquid process.

[0055] In step S202, if the conditions for the processing liquid are different (step S202, Yes), the control unit 18 executes a dummy dispensing process in which the processing liquid to be used for the next liquid processing is ejected from the processing liquid nozzle 41 to the waiting unit 70 (step S203).

[0056] For example, when at least one of the type, temperature, and mixing ratio of the processing liquid differs between the next processing and the previously executed processing, the control unit 18 executes a dummy dispensing process. For example, when the processing liquid to be used in the next processing is DIW and the processing liquid used in the previously executed processing is SC1, the types of the processing liquid differ between the next processing and the previously executed processing, and therefore the control unit 18 executes a dummy dispensing process.

[0057] When the pre-dispense process is performed, the processing liquid that has been used in the previously performed liquid process and remains in the processing liquid nozzle 41 is pushed out into the standby section 70 by the processing liquid to be used in the next liquid process. As a result, the processing liquid remaining in the processing liquid nozzle 41 is replaced with the processing liquid to be used in the next liquid process.

[0058] When the pre-dispense process in step S203 is completed, the control unit 18 starts the next liquid process (step S204).

[0059] On the other hand, if the conditions related to the treatment liquid are not different in step S202 (step S202, No), the control unit 18 starts the next liquid treatment without executing the pre-dispense process (step S204).

[0060] For example, if the processing liquid to be used in the next liquid processing is DIW and the processing liquid used in the previously executed liquid processing is DIW, the control unit 18 will not perform a dummy dispense processing because the type of processing liquid is the same between the next liquid processing and the previously executed liquid processing.

[0061] In this manner, in the substrate processing system 1 according to the embodiment, the dummy dispense process is executed only when the conditions related to the processing liquid are different between the next liquid process and the previously executed liquid process. In other words, in the substrate processing system 1, when the conditions related to the processing liquid are the same between the next liquid process and the previously executed liquid process, the execution of the dummy dispense process is omitted.

[0062] This reduces the number of times that pre-dispense processes are performed, thereby shortening the period during which liquid processing is not performed. Therefore, the substrate processing system 1 according to this embodiment can suppress a decrease in throughput due to the execution of pre-dispense processes. Furthermore, it can reduce the consumption of processing liquid used in pre-dispense processes.

[0063] In step S203, the control unit 18 may execute the dummy dispensing process until a preset processing time has elapsed since the processing liquid nozzle 41 starts discharging the processing liquid to the standby unit 70. This allows the processing time of the dummy dispensing process to be freely set.

[0064] Furthermore, the processing time of the dummy dispensing process may be determined based on a change in the temperature of the processing liquid inside the processing liquid nozzle 41 relative to the elapsed time from when the processing liquid nozzle 41 starts discharging the processing liquid into the standby unit 70. For example, the processing time of the dummy dispensing process may be the time from when the processing liquid starts discharging into the standby unit 70 until the temperature of the processing liquid inside the processing liquid nozzle 41 reaches a specified temperature. This makes it possible to optimize the processing time of the dummy dispensing process.

[0065] FIG. 5 is a flowchart showing another example of the procedure of the process performed during the liquid process that is repeatedly performed by the substrate processing system 1 according to the embodiment.

[0066] The recipe information 191 may include conditions related to another processing liquid (here, SC1 or DIW) discharged from the backside supply unit 50. Examples of the conditions related to the other processing liquid included in the recipe information 191 include the type of the other processing liquid, the temperature of the other processing liquid, etc. In FIG. 5 , the recipe information 191 includes the conditions related to the other processing liquid.

[0067] As shown in FIG. 5, the control unit 18 waits until the timing to start the next liquid treatment after the liquid treatment that has already been performed arrives (step S301, No).

[0068] When the time has come to start the next liquid processing (step S301, Yes), the control unit 18 determines whether the conditions for another processing liquid in the recipe information 191 differ between the next liquid processing and the liquid processing that has already been performed (step S302).

[0069] For example, the control unit 18 refers to the recipe information 191 to determine whether at least one of the type and temperature of the other processing liquid differs between the next liquid process and the previously executed liquid process. For example, if the other processing liquid used in the next liquid process is DIW and the other processing liquid used in the previously executed liquid process is SC1, it is determined that the type of the other processing liquid differs between the next liquid process and the previously executed liquid process. On the other hand, if the other processing liquid used in the next liquid process is DIW and the other processing liquid used in the previously executed liquid process is also DIW, it is determined that the type of the other processing liquid does not differ between the next liquid process and the previously executed liquid process.

[0070] In step S302, if the conditions for the other processing liquid are different (step S302, Yes), the control unit 18 controls each opening / closing valve 56, 58 so that the other processing liquid to be used in the next liquid processing flows into the drainage path 57 (step S303).

[0071] For example, when at least one of the type and temperature of the other processing liquid differs between the next liquid processing and the previously executed liquid processing, control unit 18 controls each of on-off valves 56, 58 so that the other processing liquid to be used in the next liquid processing flows into drainage path 57. Specifically, when at least one of the type and temperature of the other processing liquid differs, control unit 18 closes on-off valve 56 provided in supply path 51 and opens on-off valve 58 provided in drainage path 57. This causes the other processing liquid to be used in the next liquid processing to flow into drainage path 57.

[0072] When the other processing liquid to be used in the next liquid processing flows into the drainage path 57, the other processing liquid that was used in the previous liquid processing and remains in the supply path 51 on the SC1 supply source 81 and DIW supply source 82 side of the branch point 51a is pushed out by the other processing liquid to be used in the next liquid processing. As a result, the other processing liquid that remains in the supply path 51 on the SC1 supply source 81 and DIW supply source 82 side of the branch point 51a is replaced with the other processing liquid to be used in the next liquid processing.

[0073] When the process of step S303 is completed, the control unit 18 starts the next liquid process (step S304).

[0074] On the other hand, in step S302, if the conditions for the other processing liquid are not different (step S302, No), the control unit 18 starts the next liquid processing without executing the processing of step S303 (step S304).

[0075] For example, if the other processing liquid to be used in the next liquid processing is DIW and the other processing liquid used in the already executed liquid processing is DIW, the control unit 18 does not execute the processing of step S303 because the type of the other processing liquid does not differ between the next liquid processing and the already executed liquid processing.

[0076] In this manner, in the substrate processing system 1 according to the embodiment, the process of step S303 is executed only when the conditions for the other processing liquid are different between the next liquid process and the previously executed liquid process. In other words, in the substrate processing system 1, the process of step S303 is omitted when the conditions for the other processing liquid are not different between the next liquid process and the previously executed liquid process.

[0077] This reduces the number of times step S303 is performed, thereby shortening the period during which liquid processing is not performed. Therefore, the substrate processing system 1 according to this embodiment can suppress a decrease in throughput due to the execution of step S303. Furthermore, the consumption of other processing liquids used in the processing of step S303 can be reduced.

[0078] <Modifications> In the above embodiment, the processing liquid nozzle 41 is a two-fluid nozzle that discharges a mixed fluid of a processing liquid and a gas. However, the processing liquid nozzle 41 may discharge a single processing liquid instead of a mixed fluid. In this case, the recipe information 191 only needs to include the type of processing liquid and the temperature of the processing liquid as the conditions related to the processing liquid. Furthermore, the control unit 18 may perform a dummy dispensing process when at least one of the type of processing liquid and the temperature of the processing liquid differs between the next liquid process and the previously executed liquid process.

[0079] Furthermore, in the above embodiment, the case where SC1 or DIW is used as the treatment liquid is described as an example, but the type of treatment liquid is not limited to this. For example, functional water may be used as the treatment liquid. The functional water may be ammonia water or ozone water. If the functional water is ammonia, the ammonia concentration in the functional water may be 10 ppm or less. If the functional water is ozone water, the ozone concentration in the functional water may be 20 ppm or less.

[0080] In addition, in the above embodiment, before starting the next liquid process after the liquid process already performed on a predetermined number of wafers W (for example, 25 wafers), it may be determined whether the conditions related to the processing liquid in the recipe information 191 differ between the next liquid process and the liquid process already performed.

[0081] As described above, the substrate processing apparatus (for example, the substrate processing system 1) according to the embodiment includes a processing liquid nozzle (for example, the processing liquid nozzle 41), a standby unit (for example, the standby unit 70), and a controller (for example, the controller 18). The processing liquid nozzle discharges a processing liquid (for example, SC1 or DIW) onto a substrate (for example, a wafer W). The standby unit keeps the processing liquid nozzle in standby. The controller performs a liquid processing on a plurality of substrates by discharging a processing liquid from the processing liquid nozzle onto the substrates in accordance with recipe information (for example, the recipe information 191) including conditions related to the processing liquid. Before starting a liquid processing subsequent to a liquid processing that has already been performed, the controller determines whether conditions related to the processing liquid in the recipe information differ between the subsequent liquid processing and the previously performed liquid processing. If the conditions related to the processing liquid differ, the controller performs a dummy dispensing process in which the processing liquid to be used for the subsequent liquid processing is discharged from the processing liquid nozzle onto the standby unit. This makes it possible to suppress a decrease in throughput due to the execution of the dummy dispensing process.

[0082] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0083] REFERENCE SIGNS LIST 1 substrate processing system 18 control unit 19 memory unit 40 processing liquid supply unit 41 processing liquid nozzle 50 back surface supply unit 51 supply path 51a branch point 56 opening / closing valve 57 drain path 58 opening / closing valve 70 standby unit 191 recipe information W wafer

Claims

1. A substrate processing apparatus comprising: a processing liquid nozzle that discharges a processing liquid onto a substrate; a standby unit that keeps the processing liquid nozzle on standby; and a control unit that performs a liquid processing on a plurality of substrates by discharging the processing liquid from the processing liquid nozzle onto the substrate in accordance with recipe information including conditions related to the processing liquid, wherein the control unit, before starting a liquid processing next to a liquid processing that has already been performed, determines whether conditions related to the processing liquid in the recipe information differ between the next liquid processing and the liquid processing that has already been performed, and if the conditions related to the processing liquid differ, performs a dummy dispense processing that discharges the processing liquid to be used in the next liquid processing from the processing liquid nozzle to the standby unit.

2. The substrate processing apparatus of claim 1, wherein the recipe information includes the type of the processing liquid and the temperature of the processing liquid as conditions related to the processing liquid, and the control unit executes the dummy dispensing process when at least one of the type of the processing liquid and the temperature of the processing liquid differs between the next liquid processing and the liquid processing that has already been executed.

3. The substrate processing apparatus of claim 2, wherein the processing liquid nozzle is a two-fluid nozzle that ejects a mixed fluid of the processing liquid and a gas, the recipe information further includes a mixing ratio of the processing liquid and the gas in the mixed fluid as a condition related to the processing liquid, and the control unit executes the dummy dispensing process when at least one of the type of the processing liquid, the temperature of the processing liquid, and the mixing ratio is different between the next liquid process and the liquid process that has already been executed.

4. The substrate processing apparatus according to claim 1, wherein the control unit executes the dummy dispensing process from the start of discharging the processing liquid from the processing liquid nozzle to the standby section until a preset processing time has elapsed.

5. The substrate processing apparatus according to claim 4, wherein the processing time is determined based on a change in temperature of the processing liquid in the processing liquid nozzle relative to the elapsed time from when the processing liquid nozzle starts to discharge the processing liquid into the waiting section.

6. A substrate processing apparatus as described in claim 1, further comprising: a back nozzle that ejects another processing liquid used in the liquid processing onto the back surface of the substrate; a drainage path that branches off from a supply path for the other processing liquid to the back nozzle; and a switching unit that switches the destination of the other processing liquid to the drainage path or to the supply path that is closer to the back nozzle than a branch point of the supply path and the drainage path, wherein the recipe information further includes conditions related to the other processing liquid, and the control unit determines, before starting the liquid processing next to the liquid processing that has already been performed, whether or not conditions related to the other processing liquid in the recipe information differ between the next liquid processing and the liquid processing that has already been performed, and if conditions related to the other processing liquid differ, controls the switching unit so that the other processing liquid used in the next liquid processing flows into the drainage path.

7. The substrate processing apparatus according to claim 1, wherein the processing liquid includes functional water.

8. The substrate processing apparatus according to claim 7, wherein the functional water is ammonia water or ozone water.

9. The substrate processing apparatus according to claim 8, wherein the concentration of ammonia in the functional water is 10 ppm or less.

10. The substrate processing apparatus according to claim 8, wherein the concentration of ozone in the functional water is 20 ppm or less.

11. A substrate processing method including a control step of using a substrate processing apparatus having a processing liquid nozzle that discharges a processing liquid onto a substrate and a standby section for keeping the processing liquid nozzle on standby, and performing a liquid processing on a plurality of substrates by discharging the processing liquid from the processing liquid nozzle onto the substrate in accordance with recipe information including conditions related to the processing liquid, wherein the control step determines, before starting a liquid processing next to a liquid processing that has already been performed, whether the conditions related to the processing liquid in the recipe information differ between the next liquid processing and the liquid processing that has already been performed, and if the conditions related to the processing liquid differ, performing a dummy dispense process of discharging the processing liquid to be used in the next liquid processing from the processing liquid nozzle to the standby section.

Images