Member, method for manufacturing member, and semiconductor manufacturing-related device

Abstract

The purpose of the present invention is to provide a member excellent in chemical resistance, a method for manufacturing the same, and a semiconductor manufacturing-related device. The present disclosure is of a member in which at least a part of the surface of a material (a) is laminated with an insulating material, wherein the member is at least one selected from the group consisting of a building material member, a mobility member, an aerospace member, a semiconductor member, and an information communication member.

Description

Component, component manufacturing method, and semiconductor manufacturing-related equipment

[0001] The present disclosure relates to a component, a method for manufacturing the component, and a semiconductor manufacturing-related device.

[0002] Techniques have been proposed for coating substrates in semiconductor manufacturing equipment to improve corrosion resistance and the like (see, for example, Patent Documents 1 to 3).

[0003] International Publication No. 2010 / 053687 Japanese Patent Application Laid-Open No. 2013-63904 Japanese Patent Application Laid-Open No. 2018-40058

[0004] An object of the present disclosure is to provide a member having excellent chemical resistance, a method for manufacturing the same, and semiconductor manufacturing-related equipment.

[0005] The present disclosure (1) is a member in which at least a portion of the surface of a material (a) is laminated with an insulating material, and the member is at least one member selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communication materials.

[0006] The present disclosure (2) is the member according to the present disclosure (1), wherein the insulating material is a ceramic material.

[0007] The present disclosure (3) is the member according to the present disclosure (2), wherein the ceramic material is at least one selected from the group consisting of alumina, aluminosilicate, silicon carbide, silica, zirconia, cobalt oxide, and organopolysiloxane.

[0008] The present disclosure (4) is the member according to the present disclosure (2), wherein the ceramic material is at least one selected from the group consisting of alumina and organopolysiloxane.

[0009] The present disclosure (5) is a member of any combination with any of the present disclosures (2) to (4), in which the purity of the ceramic material is 50% by mass or more.

[0010] The present disclosure (6) is a member of any combination with any of the present disclosures (1) to (5), wherein the material (a) is at least one selected from the group consisting of resin, rubber, metal, and ceramic.

[0011] The present disclosure (7) is a member of any combination with any of the present disclosures (1) to (6), wherein the material (a) is at least one selected from the group consisting of resin and rubber.

[0012] The present disclosure (8) is a member of any combination with any of the present disclosures (1) to (7), wherein the material (a) is at least one selected from the group consisting of polyether ether ketone resin and polyphenylene sulfide.

[0013] The present disclosure (9) is a member of any combination with any of the present disclosures (1) to (8), in which the material (a) has a temperature of 560°C or less when it loses 1% by mass due to thermal decomposition.

[0014] The present disclosure (10) is a member in any combination with any of the present disclosures (1) to (9), wherein the coating containing the insulating material has a thickness of 0.1 to 500 μm.

[0015] The present disclosure (11) is a member of any combination with any of the present disclosures (1) to (10), wherein the coating containing the insulating material has a thickness of 10 to 100 μm.

[0016] The present disclosure (12) is a member of any combination with any of the present disclosures (1) to (11), wherein the member is at least one selected from the group consisting of piping, nozzles, tubes, tanks, containers, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials.

[0017] The present disclosure (13) is a member of any combination with any of the present disclosures (1) to (12) in which the member is a semiconductor manufacturing related device.

[0018] The present disclosure (14) is the member according to the present disclosure (13), wherein the semiconductor manufacturing related device is a device in which a chemical is used.

[0019] The present disclosure (15) relates to a method for treating a disease in which the drug is TMAH ([(CH ３ ) ４ N] ＋ [OH] －), sulfuric acid, isopropyl alcohol, hydrofluoric acid, mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ O mixture), SC2 (HCl, H ２ O ２ and H ２ The component according to the present disclosure (14), wherein the acid is at least one selected from the group consisting of a mixture of ammonium hydroxide, ...

[0020] The present disclosure (16) is the member according to the present disclosure (14), wherein the chemical is at least one selected from the group consisting of silicon-based gas, arsenic-based gas, phosphorus-based gas, boron-based gas, metal hydride gas, metal alkyl gas, halogenated hydrocarbon gas, halogen-halide gas, nitrogen oxide gas, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0021] The semiconductor manufacturing-related equipment member of the present disclosure (17) is a member of any combination with any of the present disclosures (14) to (16), in which at least a part of the surface that comes into contact with the chemical is laminated with the insulating material.

[0022] The semiconductor manufacturing related equipment member of the present disclosure (18) is a semiconductor manufacturing related equipment member in which chemicals are used inside the equipment, and is a member of any combination with any of the present disclosures (13) to (17), in which at least a part of the surface that comes into contact with the chemicals is laminated with the insulating material.

[0023] The present disclosure (19) is a component in any combination with any of the present disclosures (1) to (18), in which the mass change rate in the following chemical resistance evaluation is 50.0 mass% or less. (Chemical Resistance Evaluation) A test piece of the component (a test piece in which a coating containing an insulating material is laminated on the entire surface of material (a), material (a) size: 10 mm x 50 mm x 2 mm or 10 mm x 50 mm x 6 mm, coating thickness: 30 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After the measurement, the test piece is completely immersed in a mixed acid in which the concentration ratio (molar ratio) of hydrofluoric acid to nitric acid is 1:5 (hydrofluoric acid concentration: 50% concentration, nitric acid concentration: 60% concentration) and kept at room temperature (20°C) for 1 week (168 hours). After the immersion, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60° C. for 12 hours. The mass of the test piece after immersion is measured under room temperature (20° C.) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

[0024] The present disclosure (20) is a method for manufacturing a member in any combination with any of the present disclosures (1) to (19), in which the member is manufactured under conditions of a temperature at which the material (a) loses 1% by mass due to thermal decomposition or lower.

[0025] The present disclosure (21) is a method for producing a member according to the present disclosure (20), comprising a step of laminating the insulating material on the surface of the material (a) and a drying step.

[0026] The present disclosure (22) is a semiconductor manufacturing-related device equipped with any combination of components with any of the present disclosures (1) to (19).

[0027] The present disclosure (23) is a semiconductor manufacturing-related device of the present disclosure (22), which is at least one selected from the group consisting of semiconductor manufacturing devices and devices related to semiconductor manufacturing devices.

[0028] The present disclosure (24) is the semiconductor manufacturing-related equipment of the present disclosure (23), wherein the semiconductor manufacturing equipment is at least one selected from the group consisting of a photolithography process equipment, a thin film formation / etching / cleaning / drying equipment, an inspection / evaluation equipment / manufacturing equipment, a resist processing equipment, an etching equipment, a cleaning / drying equipment, a CVD equipment, a thin film formation equipment, a CMP equipment, a processing equipment, an aging equipment, and an inspection equipment, and the semiconductor manufacturing equipment-related equipment is at least one selected from the group consisting of a pure water / chemical equipment, a gas equipment, a clean room equipment, and a manufacturing-related equipment.

[0029] The present disclosure (25) is directed to a photolithography process apparatus, wherein the photolithography process apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), and a descum apparatus; the thin film formation / etching / cleaning / drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrub cleaning apparatus; the inspection / evaluation apparatus / manufacturing apparatus is a defect repair apparatus; the resist processing apparatus is at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, and an ashing apparatus; the etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus; the cleaning / drying apparatus is at least one selected from the group consisting of a wet cleaning apparatus, a scrub cleaning apparatus, and a drying apparatus; the CVD apparatus is at least one selected from the group consisting of a high-pressure CVD apparatus, a SACVD apparatus, a low-pressure CVD apparatus, a plasma CVD apparatus, a metal CVD apparatus, and an ALD apparatus; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus; the processing apparatus is a bump plating apparatus; the aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus; the inspection apparatus is a life test apparatus; the pure water / chemical liquid apparatus is at least one selected from the group consisting of a chemical supply apparatus, a slurry supply apparatus, a chemical purification apparatus, and a waste liquid treatment apparatus; the gas apparatus is at least one selected from the group consisting of a gas generation apparatus, a gas purification apparatus, a gas mixing apparatus, a gas detection apparatus, and an exhaust gas treatment apparatus; the clean room apparatus is at least one selected from the group consisting of a thermal chamber and an environmental test apparatus; The manufacturing-related equipment is at least one selected from the group consisting of a jig cleaning / drying device, a flow control device, a packaging device, and a measuring device for liquids and gases.

[0030] According to the present disclosure, it is possible to provide a member having excellent chemical resistance, a method for manufacturing the same, and semiconductor manufacturing-related equipment.

[0031] The present disclosure will be specifically described below.

[0032] The present disclosure relates to a member having a material (a) on at least a portion of its surface laminated with an insulating material, the member being at least one member selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communications materials. The member of the present disclosure has excellent chemical resistance.

[0033] In the member of the present disclosure, at least a portion of the surface of the material (a) is laminated with an insulating material.

[0034] The material (a) is not particularly limited, and known organic or inorganic materials can be used, and specific examples include resin, rubber, metal, ceramic, etc. The material (a) is preferably an organic material. Furthermore, the material (a) is preferably at least one selected from the group consisting of resin, rubber, metal, and ceramic, and more preferably at least one selected from the group consisting of resin and rubber.

[0035] The resin is not particularly limited, and known resins can be used. Examples include polyolefin resins, polyester resins, polyamide (PA) resins, fluororesins, etc. Heat-resistant resins such as engineering plastic resins and super engineering plastic resins can also be suitably used.

[0036] As the resin, from the viewpoint of improving adhesion to the insulating material, a non-fluorine-containing resin (a resin that does not contain fluorine) or a heat-resistant resin is preferred, and a heat-resistant resin that does not contain fluorine is more preferred.

[0037] The heat-resistant resin may be any resin generally recognized as having heat resistance, but it is preferable to use a heat-resistant resin other than a fluorine-containing ethylenic polymer (a fluorine-containing ethylenic polymer). In this specification, "heat resistance" means a property that allows continuous use at temperatures of 150°C or higher.

[0038] Examples of the heat-resistant resin include polyamideimide resin (PAI), polyimide resin (PI), polyethersulfone resin (PES), polyetherimide resin, aromatic polyether ketone resin (PAEK), aromatic polyester resin, and polyarylene sulfide resin (PAS). One type may be used alone, or two or more types may be used in combination.

[0039] PAI is a resin composed of a polymer having amide and imide bonds in its molecular structure. The PAI is not particularly limited, and examples include resins composed of high-molecular-weight polymers obtained by various reactions, such as the reaction of an aromatic diamine having an amide bond in its molecule with an aromatic tetracarboxylic acid such as pyromellitic acid; the reaction of an aromatic tricarboxylic acid such as trimellitic anhydride with a diamine such as 4,4-diaminophenyl ether or a diisocyanate such as diphenylmethane diisocyanate; and the reaction of a dibasic acid having an aromatic imide ring in its molecule with a diamine. From the perspective of excellent heat resistance, PAI is preferably composed of a polymer having an aromatic ring in its main chain. PAI features include high thermal stability, abrasion resistance, and creep resistance that is resistant to change even under load. It is also thermoplastic and has excellent melt processability, allowing it to be molded by extrusion or compression molding. The melt flow rate (MFR) is preferably in the range of 10 to 80 g / 10 min.

[0040] PI is a resin made of a polymer having an imide bond in its molecular structure. The PI is not particularly limited, and examples include resins made of high-molecular-weight polymers obtained by the reaction of aromatic tetracarboxylic anhydrides such as pyromellitic anhydride. From the viewpoint of excellent heat resistance, PI made of a polymer having an aromatic ring in the main chain is preferred. PIs are characterized by high heat resistance, insulating properties, low dielectric constant, low dielectric loss, and radiation resistance, and are classified into non-thermoplastic polyimides, thermoplastic polyimides, thermosetting polyimides, and soluble polyimides. Furthermore, the MFR (melt flow rate) is preferably in the range of 0.1 to 50 g / 10 min.

[0041] PES has the following general formula:

[0042]

[0043] The PES is a resin made of a polymer having a repeating unit represented by the formula: The PES is not particularly limited, and examples include resins made of a polymer obtained by polycondensation of dichlorodiphenyl sulfone and bisphenol. PES is characterized by its high heat resistance, with a glass transition temperature (Tg) of 225°C. It is an amorphous plastic with excellent properties, such as dimensional stability, high fluidity, and flame retardancy, in addition to high heat resistance, and is used in a wide range of industrial applications, including housings for electrical and electronic components and automotive parts. Furthermore, the MFR (melt flow rate) is preferably in the range of 5 to 60 g / 10 min.

[0044] The aromatic polyetherketone resin is a resin containing a repeating unit composed of an arylene group, an ether group [—O—], and a carbonyl group [—C(═O)—]. Examples of the aromatic polyetherketone resin include polyetherketone resin (PEK), polyetheretherketone resin (PEEK), polyetherketoneketone resin (PEKK), polyetheretherketoneketone resin (PEEKK), and polyetherketone ester resin. The aromatic polyetherketone resins can be used alone or in combination of two or more. The aromatic polyetherketone resin is preferably at least one selected from the group consisting of PEK, PEEK, PEKK, PEEKK, and polyetherketone ester resin, more preferably at least one selected from the group consisting of PEEK and PEKK, and more preferably PEEK. PEEK has a high continuous use temperature of 260°C and excellent heat resistance, hot water resistance, flame retardancy, mechanical properties, and electrical properties, making it suitable for use in aerospace, automobiles, medical equipment, 3D printers, food, and semiconductors. Its melt flow rate (MFR) is preferably in the range of 1 to 20 g / 10 min.

[0045] PAS has the following general formula:

[0046]

[0047] (wherein Ar represents an arylene group). The PAS is not particularly limited, and examples include polyphenylene sulfide (PPS). PPS is a thermoplastic resin with a normal heat resistance temperature of 220-240°C and cold resistance down to -20°C. It has excellent fatigue and creep properties, as well as good weather resistance and hydrolysis resistance. It is a flame-retardant material without the addition of flame retardants, and also has heat shock resistance. It also has good moldability and a high degree of freedom in the shape of molded products, making it used in the electrical and electronic component field for connectors, various electronic components, and automotive parts. The melt flow rate (MFR) is preferably in the range of 10-50 g / 10 min.

[0048] The heat-resistant resin is preferably at least one selected from the group consisting of PAI, PI, PES, aromatic polyether ketone resin, and PAS, more preferably at least one selected from the group consisting of aromatic polyether ketone resin and PAS, and even more preferably an aromatic polyether ketone resin.

[0049] The rubber may be either fluororubber or non-fluororubber (rubber not containing fluorine). Specific examples include fluororubber, diene rubbers such as acrylonitrile-butadiene rubber (NBR) or its hydride (HNBR), styrene-butadiene rubber (SBR), chloroprene rubber (CR), butadiene rubber (BR), natural rubber (NR), isoprene rubber (IR), and cyclopentene rubber (CPR), ethylene-propylene-termonomer copolymer rubber, silicone rubber, butyl rubber, epichlorohydrin rubber, acrylic rubber, chlorinated polyethylene (CPE), chlorosulfonated ethylene rubber (CSM), polyblends of acrylonitrile-butadiene rubber and vinyl chloride (PVC-NBR), ethylene propylene diene rubber (EPDM), and ethylene propylene rubber (EPM). Of these, non-fluororubber is preferred from the viewpoint of improving adhesion to insulating materials.

[0050] The metal is not particularly limited, and known metals can be used, including iron, steel, non-ferrous metals, etc. Examples of steel include SPC material, SS material, SC material, SK material, stainless steel, chromium-molybdenum high-tensile steel, white cast iron, gray cast iron, and spheroidal graphite cast iron. Examples of non-ferrous metals include aluminum-aluminum alloy, copper-copper alloy, zinc-zinc alloy, titanium-titanium alloy, magnesium-magnesium alloy, and nickel-nickel alloy.

[0051] The ceramic is not particularly limited, and known ceramics can be used, such as alumina, zirconia, aluminum nitride, silicon carbide, silicon oxide, silicon nitride, forsterite, steatite, cordierite, sialon, machinable ceramics, barium titanate, lead zirconate, ferrite, and mullite.

[0052] Alumina has the characteristics of excellent electrical insulation, heat resistance, abrasion resistance, mechanical strength, relatively high thermal conductivity, and is highly versatile.

[0053] Zirconia has excellent thermal properties, a melting point of 2700°C, a maximum operating temperature of approximately 1200°C, a high thermal shock resistance of Δ400°C, and a significantly lower thermal conductivity than other ceramics.

[0054] Aluminum nitride is characterized by its extremely high thermal conductivity, excellent heat dissipation, insulation, and thermal shock resistance, and is used as a substrate material. Aluminum nitride substrates can be metallized.

[0055] Silicon carbide is characterized by its chemical and physical stability, high hardness, extremely high thermal conductivity compared to other ceramics, and semi-conductivity.

[0056] Silicon oxide is characterized by its excellent heat resistance and thermal shock resistance, and its Vickers hardness is 8.6 to 9.8 GPa.

[0057] Silicon nitride is characterized by its low coefficient of thermal expansion, chemical stability, and excellent wear resistance and electrical insulation, making it used in a wide range of industrial fields.

[0058] Forsterite is characterized by its high insulation resistance and is therefore widely used as an electrical insulating material. Its dielectric constant is 6.5, making it a small dielectric loss tangent (Tan δ), making it useful as a high-frequency insulating material.

[0059] The characteristics of steatite are low high frequency loss, high insulation resistance at high temperatures, and high mechanical strength.

[0060] A characteristic of cordierite is that when heated, the crystals expand in the radial direction and contract in the height direction.

[0061] The characteristics of sialon include excellent heat resistance, mechanical strength in high-temperature environments, thermal shock resistance, and wear resistance, as well as low thermal expansion, high rigidity, and corrosion resistance.

[0062] Machinable ceramics are characterized by their ease of cutting, suitability for fine and precision machining, and low porosity, which reduces outgassing and helium permeation, providing stable performance even in a vacuum.

[0063] Barium titanate is characterized by its extremely high dielectric constant, which makes it widely used as a dielectric material for multilayer ceramic capacitors and the like, and its extremely high refractive index, which makes it also used as an optical material.

[0064] Lead zirconate is characterized by a large piezoelectric charge coefficient, a medium dielectric constant, and a high coupling coefficient.

[0065] The characteristics of ferrite are that it is a magnetic material that can become a strong magnet, is less conductive to electricity than metallic magnetic materials, and because it is a baked oxide (porcelain), it is resistant to rust and chemicals.

[0066] Mullite oxide is characterized by its excellent heat resistance, impact resistance, and abrasion resistance, and can be produced at relatively low cost.

[0067] Among the above ceramics, zirconia, aluminum nitride, silicon oxide, forsterite, steatite, cordierite, and sialon are preferred, with zirconia, aluminum nitride, and silicon oxide being particularly preferred, from the viewpoint of enhancing the effect of laminating with an insulating material.

[0068] The temperature at which the material (a) loses 1% by mass due to thermal decomposition (hereinafter also referred to as the 1% thermal decomposition temperature) is preferably 560°C or lower. From the viewpoint of improving chemical resistance, the upper limit of the 1% thermal decomposition temperature is more preferably 500°C, even more preferably 450°C. The lower limit is not particularly limited, but is preferably 150°C, more preferably 200°C, and even more preferably 250°C. The 1% thermal decomposition temperature is measured using a thermal analyzer STA7200 manufactured by Hitachi High-Tech Science Corporation. The measurement is performed in a nitrogen purge atmosphere at 200 mL / min. A 10 mg sample is placed in an aluminum pan, held at 25°C for 10 minutes, and then heated to 600°C at a heating rate of 10°C / min. The temperature at which a 1% mass loss occurs from the initial mass is defined as the 1% thermal decomposition temperature.

[0069] To enhance adhesion, the material (a) may be degreased in advance, preferably by wiping with ethanol or isopropyl alcohol or ultrasonic cleaning, though not particularly limited thereto. Pretreatments include roughening the surface by sandblasting or the like, or by chemical conversion treatment such as alumite treatment, or by plasma treatment or corona treatment, and plasma treatment or corona treatment is particularly preferred.

[0070] The material (a) may be surface-treated with any known method to enhance adhesion, although this is not particularly limited. Specifically, the material may be treated with a silane coupling agent, such as an epoxysilane, aminosilane, isocyanatesilane, vinylsilane, acrylicsilane, hydrophobic alkylsilane, phenylsilane, or fluorinated alkylsilane, which has a reactive functional group.

[0071] Examples of the silane coupling agent include epoxy silanes such as γ-glycidoxypropyltriethoxysilane and β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, amino silanes such as aminopropyltriethoxysilane and N-phenylaminopropyltrimethoxysilane, isocyanate silanes such as 3-isocyanatepropyltrimethoxysilane, vinyl silanes such as vinyltrimethoxysilane, and acrylic silanes such as acryloxytrimethoxysilane, with 3-aminopropyltriethoxysilane, vinyltrimethoxysilane, and 3-methacryloxypropyltriethoxysilane being preferred.

[0072] The insulating material is not particularly limited, and examples thereof include ceramic materials, glass composites, glass epoxy, and glass polyimides. The insulating materials can be used alone or in combination of two or more. Among the insulating materials, ceramic materials are preferred because of their improved chemical resistance.

[0073] As the ceramic material, known materials can be used, and examples thereof include metal carbides, metal nitrides, metal oxides, metal silicates, and organopolysiloxanes (organosiloxane condensates).

[0074] Examples of the metal carbide include silicon carbide (SiC), tungsten carbide (WC), and molybdenum carbide (Mo). ２ Examples of suitable materials include titanium carbide (TiC), tantalum carbide (TaC), niobium carbide (NbC), vanadium carbide (VC), zirconium carbide (ZrC), etc. Among these, silicon carbide is preferred.

[0075] Examples of the metal nitride include silicon nitride (Si ３ N ４ ), aluminum nitride (AlN), boron nitride (BN), titanium nitride (TiN), titanium aluminum nitride (TiAlN), chromium nitride (CrN), etc. Among these, aluminum nitride and titanium aluminum nitride are preferred.

[0076] Examples of the metal oxide include alumina (Al ２ O ３ ), silica (SiO２ ), zirconia (ZrO ２ ), cobalt oxide (CoO, CO ２ CO ３ , CO ３ O ４ ), zinc oxide (ZnO), tin oxide (SnO ２ ), titania (TiO ２ ), indium oxide (In ２ O ３ Among these, alumina, silica, zirconia and cobalt oxide are preferred, and alumina is more preferred.

[0077] Examples of the metal silicates include calcium silicate, zinc silicate, aluminum silicate, aluminum orthosilicate, aluminosilicates (aluminosilicate salts), borosilicate, beryllosilicate, calcium aluminum silicate, sodium aluminum silicate, beryllium aluminum silicate, sodium silicate, calcium orthosilicate, calcium metasilicate, calcium sodium silicate, zirconium silicate, magnesium orthosilicate, magnesium metasilicate, manganese silicate, barium silicate, etc. Among these, aluminosilicates are preferred.

[0078] In this specification, the organopolysiloxane (organosiloxane condensate) refers to a compound that contains a siloxane bond (—Si—O—Si—O—Si—) as its skeleton and has organic groups bonded to the silicon atoms.

[0079] In the organic group, the atom bonded to the silicon atom is preferably a carbon atom. Atoms or groups other than the organic group (for example, hydrogen atoms, hydroxy groups, hydrolyzable groups, etc.) may be bonded to a portion of the silicon atom. The hydrolyzable group is a group that can react with water to become a hydroxy group, and examples thereof include a halogen atom (such as a chlorine atom), an alkoxy group, an acyl group, and an amino group. The organic group is preferably a hydrocarbon group, and more preferably an aromatic hydrocarbon group or a saturated aliphatic hydrocarbon group. The hydrocarbon group, aromatic hydrocarbon group, and saturated aliphatic hydrocarbon group may each further have a substituent. Examples of the substituent include a halogen atom, an alkoxy group, an aryloxy group, and a group containing the above-mentioned radical polymerizable group.

[0080] Examples of the organopolysiloxane include linear organopolysiloxanes and branched organopolysiloxanes.

[0081] The linear organopolysiloxane is an organosiloxane having a main chain of R ２ is a linear polymer consisting of SiO units, ２ Specifically, it is a compound in which an organic functional group is introduced into at least one of R ２ Examples of the alkyl group include alkenyl groups such as a vinyl group, an aryl group, a butenyl group, a hexenyl group, an octenyl group, a (meth)acryloyloxyethyl group, a (meth)acryloyloxymethyl group, a cyclohexenylethyl group, and a vinyloxypropyl group; and hydrogen groups.

[0082] The branched organopolysiloxane has one or more R1 ａ SiO （４－ａ）／２ Specifically, R1 is a polymer having a three-dimensional network structure (resin structure) with units represented by the formula: ３ SiO １／２ and SiO ４／２ Organopolysiloxane (MQ resin) consisting of Q units represented by the formula: ３／２ Organopolysiloxane (MTQ resin) consisting of T units and Q units represented by the formula: ２ SiO ２／２and Q units (MDQ resins), organopolysiloxanes consisting of M units, D units, T units and Q units (MDTQ resins), and organopolysiloxanes consisting of T units only (T resins).

[0083] R1 can be a substituted or unsubstituted monovalent hydrocarbon group or alkoxy group. Specific examples of monovalent hydrocarbon groups include alkyl groups such as methyl, ethyl, propyl, butyl, pentyl, isopropyl, isobutyl, cyclopentyl, and cyclohexyl, alkenyl groups such as vinyl, aryl, and hexenyl, aryl groups such as phenyl and naphthyl, halogenated alkyl groups such as 3-chloropropyl, 3,3,3-trifluoropropyl, and nonafluorobutylethyl, halogenated aryl groups such as 4-chlorophenyl, 3,5-dichlorophenyl, and 3,5-difluorophenyl, and halogenated alkyl group-substituted aryl groups such as 4-chloromethylphenyl and 4-trifluoromethylphenyl. Specific examples of alkoxy groups include methoxy, ethoxy, propoxy, butoxy, and isopropoxy.

[0084] The ceramic material preferably has an average particle size of 10 to 10,000 nm. The lower limit of the average particle size is more preferably 50 nm, and even more preferably 100 nm. The upper limit of the average particle size is more preferably 8,000 nm, and even more preferably 5,000 nm. The average particle size of the ceramic material is a value measured by dynamic light scattering.

[0085] The purity of the ceramic material is preferably 50% by mass or more. The lower limit of the purity of the ceramic material is more preferably 60% by mass or more, even more preferably 70% by mass or more, even more preferably 80% by mass or more, particularly preferably 90% by mass or more, especially more preferably 93% by mass or more, particularly preferably 95% by mass or more, and most preferably 98% by mass or more. The upper limit of the purity of the ceramic material is not particularly limited and may be 100% by mass. In this specification, the purity of the ceramic material refers to the purity of the ceramic component in the insulating material. The purity of the ceramic material is a value measured by the following method. A sample (ceramic material) is added to a pressure decomposition vessel with mixed acid (nitric acid, hydrofluoric acid, sulfuric acid) and heated to perform pressure acid decomposition. The resulting decomposition liquid is treated and quantified using an ICP-mass spectrometer.

[0086] The member of the present disclosure is used as at least one member selected from the group consisting of building materials, mobility members, aerospace members, semiconductor members, and information and communication members. As the member, a semiconductor member is preferable in terms of excellent chemical resistance, and a semiconductor manufacturing-related equipment member (semiconductor manufacturing equipment article) is more preferable.

[0087] Examples of the building materials (construction materials) include interior architectural materials such as baseboards, ceiling materials, and plumbing materials, and exterior architectural materials such as waterproof sheets, waterproofing materials, exterior wall materials, and roofing materials. Examples of the mobility components include parts used in ferries, trains, automobiles, motorcycles, drones, robots, and the like. Examples of the aerospace components include exterior and interior materials for aircraft, rockets, and the like, wire coating materials, cable protection materials, jet engines, cabin interior materials, and parts thereof. Examples of the semiconductor components include process materials used in semiconductor manufacturing and parts for semiconductor manufacturing-related equipment. Examples of the information and communication components include parts for devices such as wireless LAN transmission and reception circuits, circuit boards, and parts for optical communication devices.

[0088] The member of the present disclosure is preferably applicable to at least one selected from the group consisting of piping, nozzles, tubes, tanks, containers, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials, since chemical resistance is required. In particular, the member of the present disclosure is preferably applicable to the piping, nozzles, tubes, etc. in semiconductor manufacturing equipment.

[0089] The piping is not particularly limited, but examples of its shape include a robust pipe type, a flexible hose that can be incorporated to fit the installation space, a bellows pipe with a large diameter that can be bent, etc. The inside of the piping may be polished with high precision so as not to generate dust and not to disturb the liquid flow or gas flow.

[0090] The nozzle is not particularly limited, but the tip may be precisely machined to match the size and shape of the part, and in addition, since it comes into contact with the part, it can be made of a highly hard and durable material that is resistant to friction and bending.

[0091] The tube is not particularly limited, but the tube diameter is preferably 2 mm to 400 mm, more preferably 2 mm to 100 mm, and particularly preferably 2 mm to 25 mm. A material having stress crack resistance, chemical resistance, excellent mechanical strength, and cleanliness (low contamination of the chemical solution by extracted ions) is used.

[0092] The tank or container is not particularly limited, but may be precision cleaned (water washing, acetic acid immersion, wiping cleaning, pure water cleaning, etc.) to remove dirt and residues. Packaging after cleaning may be carried out in a clean room or clean booth environment.

[0093] The joints and valves are not particularly limited, but are required to be oil-free, particle-free, dead space-free, and external leak-free, and the size is preferably in the range of Φ3.2 to 40.0 mm, and more preferably in the range of Φ3.2 to 12.7 mm.

[0094] The pump is not particularly limited, but may be required to have retractability.

[0095] The spin chuck is not particularly limited, but may be required to have hardness, corrosion resistance, and dimensional stability, and may be provided with electrical conductivity.

[0096] Although there are no particular limitations on the O-rings and sealing materials, the required material properties are excellent elasticity, good compression set, high wear resistance, excellent heat resistance, resistance to corrosion by applied liquids and gases, and long life. In particular, O-rings used in semiconductor manufacturing equipment are used in harsh chemical environments, such as being exposed to various plasmas, and therefore may be required to have high heat resistance, chemical resistance, and plasma resistance.

[0097] The packing and gasket are not particularly limited, but may be required to have a low coefficient of friction and excellent abrasion resistance, and may also be required to have heat resistance, cold resistance, pressure resistance, and chemical resistance to prevent leakage.

[0098] The washer is not particularly limited, but is expected to be used in a clean room or the like and may be required to have durability, corrosion resistance, and rust prevention properties.

[0099] The semiconductor manufacturing equipment of the above-mentioned semiconductor manufacturing related equipment includes photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), baking equipment, descum equipment), thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection evaluation equipment and other manufacturing equipment (defect repair equipment), wafer processing equipment (wafer marking equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment, baking equipment), etching Equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (dry cleaning equipment, wet cleaning equipment, scrub cleaning equipment, drying equipment), heat treatment equipment (oxidation equipment, diffusion equipment, annealing equipment), ion implantation equipment (high current ion implantation equipment, medium current ion implantation equipment, high energy ion implantation equipment), thin film formation equipment, CVD equipment (high pressure CVD equipment, SACVD, low pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), sputtering equipment, other thin film formation equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor conductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), inspection and evaluation equipment (Auger electron spectroscopy equipment), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (wafer marking equipment, back grinding machines, bump plating equipment, back grinder tape applicators, back grinders, back grinder tape peelers), dicing equipment (dicing equipment, wafer mounting equipment), bonding equipment (die bonding equipment, hybrid bonding equipment, wire bonding equipment, inner lead bonding equipment, outer lead bonding equipment, flip chip bonding equipment), packaging equipment (molding equipment, deburring equipment, solder processing equipment), other testing equipment (electron beam testing equipment, laser beam testing equipment), probing equipment (proppers), handlers, aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), other inspection equipment (cold-heat testing equipment, temperature and humidity testing equipment, pressure cooker equipment, laser processing systems, various life test equipment), etc.Equipment related to semiconductor manufacturing equipment includes various transport devices (intra-process wafer transport devices, inter-process wafer transport devices, stockers), pure water and chemical liquid equipment (pure water production equipment, ultrafiltration equipment, reverse osmosis equipment, sterilization equipment, chemical supply equipment, slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (clean benches, clean tunnels, thermal chambers, environmental testing equipment, air showers, pass boxes), and other manufacturing-related equipment (various jig cleaning and drying equipment, flow control equipment, various taping equipment, various packaging equipment, measuring equipment for liquids and various gases).

[0100] Among these, from the perspective of laminating ceramic materials and taking advantage of their chemical resistance properties, we offer photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), descum equipment), thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment and other manufacturing equipment (defect repair equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment), etching equipment (dry etching equipment, wet etching equipment), cleaning / drying equipment (wet cleaning equipment), , scrub cleaning equipment, drying equipment), CVD equipment (high pressure CVD equipment, SACVD, low pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), other thin film formation equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (bump plating equipment), aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (various life test equipment) are preferred. Preferred examples of equipment related to semiconductor manufacturing equipment include pure water / chemical liquid equipment (chemical supply equipment, slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (thermal chambers, environmental testing equipment), and other manufacturing-related equipment (various jig cleaning / drying equipment, flow control equipment, various packaging equipment, measuring equipment for liquids and various gases).

[0101] As described above, the members of the present disclosure can be suitably used as semiconductor manufacturing-related equipment components (semiconductor manufacturing-related equipment articles), but because of their excellent chemical resistance, they are more suitable as components constituting semiconductor manufacturing-related equipment in which chemicals are used inside the equipment.

[0102] The chemicals are not particularly limited, but include chemicals used in semiconductor manufacturing related equipment, etc. The chemicals can be used alone or in combination of two or more.

[0103] Specific examples of the chemical include TMAH ([(CH ３ ) ４ N] ＋ [OH] － ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ O mixture), SC2 (HCl, H ２ O ２ and H ２ O mixture), phosphoric acid, and hydrochloric acid. ３ ) ４ N] ＋ [OH] － ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ O mixture), SC2 (HCl, H ２ O ２ and H ２ At least one selected from the group consisting of a mixture of hydrofluoric acid and nitric acid, phosphoric acid, and hydrochloric acid is preferred, a mixed acid of hydrofluoric acid and nitric acid is more preferred, and a mixed acid of hydrofluoric acid and nitric acid is even more preferred.

[0104] Other examples of the chemical include at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen-halide gases, nitrogen oxide gases, hydrogen sulfide gases, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas. Also preferred as the chemical is at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen-halide gases, nitrogen oxide gases, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0105] Examples of the silicon-based gas include monosilane, dichlorosilane, trichlorosilane, silicon tetrachloride, silicon tetrafluoride, and disilane. Examples of the arsenic-based gas include arsine, arsenic(III) fluoride, arsenic(V) fluoride, arsenic(III) chloride, and arsenic(V) chloride. Examples of the phosphorus-based gas include phosphine, phosphorus(III) fluoride, phosphorus(V) fluoride, phosphorus(III) chloride, phosphorus(V) chloride, and phosphorus oxychloride. Examples of the boron-based gas include diborane, boron trifluoride, boron trichloride, and boron tribromide. Examples of the metal hydride gas include hydrogen selenide, monogermane, hydrogen telluride, stibine, and tin hydride. Examples of the metal alkyl gas include trialkylgallium and trialkylindium. Examples of the halogenated hydrocarbon gas include tetrafluoromethane, trifluoromethane, difluoromethane, hexafluoropropane, octafluoropropane, and octafluorocyclobutane. Examples of the halogen / halide gas include fluorine, hydrogen fluoride, chlorine, hydrogen chloride, carbon tetrachloride, hydrogen bromide, sulfur hexafluoride, nitrogen trifluoride, sulfur tetrafluoride, tungsten(VI) fluoride, molybdenum(VI) fluoride, germanium tetrachloride, tin(IV) chloride, antimony(V) chloride, tungsten(VI) chloride, and molybdenum hexachloride. Examples of the nitrogen oxide gas include nitric oxide, nitrogen dioxide, and dinitrogen monoxide. Among these, ammonia gas, nitrogen trifluoride, dinitrogen monoxide, monosilane, and octafluorocyclobutane are preferred, and ammonia gas, nitrogen trifluoride, and dinitrogen monoxide are more preferred.

[0106] In order to ensure chemical resistance, it is preferable that at least a portion of the surface of the semiconductor manufacturing-related equipment component (semiconductor manufacturing-related equipment article) that comes into contact with the chemicals is laminated with the insulating material, and it is more preferable that the entire surface that comes into contact with the chemicals is laminated with the insulating material.

[0107] In terms of chemical resistance, the member of the present disclosure preferably has a mass change rate of 50.0 mass% or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the member (a test piece in which a coating containing an insulating material is laminated over the entire surface of material (a), material (a) size: 10 mm x 50 mm x 2 mm or 10 mm x 50 mm x 6 mm, coating thickness: 30 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After measurement, the test piece is completely immersed in a mixed acid in which the concentration ratio (molar ratio) of hydrofluoric acid to nitric acid is 1:5 (hydrofluoric acid concentration: 50% concentration, nitric acid concentration: 60% concentration) and maintained at room temperature (20°C) for 1 day (24 hours) or 1 week (168 hours). After the immersion, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60° C. for 12 hours. The mass of the test piece after immersion is measured under room temperature (20° C.) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

[0108] The upper limit of the mass change rate is more preferably 30.0% by mass, even more preferably 15.0% by mass, and even more preferably 5.0% by mass. The lower limit is not particularly limited, and 0% by mass is most preferred.

[0109] In terms of chemical resistance, the member of the present disclosure preferably has a mass change rate of 50.0 mass% or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the member (a test piece in which a coating containing an insulating material is laminated over the entire surface of material (a), material (a) size: 10 mm x 50 mm x 2 mm or 10 mm x 50 mm x 6 mm, coating thickness: 30 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After measurement, the test piece is completely immersed in a mixed acid of hydrofluoric acid and nitric acid with a concentration ratio (molar ratio) of 1:100 (hydrofluoric acid concentration: 50% concentration, nitric acid concentration: 60% concentration) and kept at room temperature (20) for 1 day (24 hours) or 1 week (168 hours). After the immersion, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60° C. for 12 hours. The mass of the test piece after immersion is measured under room temperature (20° C.) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

[0110] The upper limit of the mass change rate is more preferably 30.0% by mass, even more preferably 15.0% by mass, even more preferably 5.0% by mass, and even more preferably 3.0% by mass. The lower limit is not particularly limited, and 0% by mass is most preferred.

[0111] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 50.0 mass % or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the above member (a test piece laminated with a coating containing an insulating material of material (a), size of material (a): 10 mm x 50 mm x 2 mm or 10 mm x 50 mm x 6 mm, coating thickness: 15 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After the measurement, the test piece is immersed in TMAH([(CH ３ ) ４ N] ＋ [OH] － ) (25% concentration), completely immersed at 80 ° C and held for 1 week (168 hours). After measurement, the test piece was completely immersed in concentrated sulfuric acid (98%) and held at 90 ° C for 1 week (168 hours). After holding, the test piece was washed with pure water, water droplets on the surface were wiped off, dried at 60 ° C for 12 hours, and the mass of the test piece after immersion was measured under room temperature (20 ° C). After holding, the test piece was washed with pure water, water droplets on the surface were wiped off, dried at 60 ° C for 12 hours, and the mass of the test piece after immersion was measured under room temperature (20 ° C). The mass change rate (%) was calculated from the measured masses before and after immersion.

[0112] The upper limit of the mass change rate is more preferably 5% by mass, even more preferably 1% by mass, and even more preferably 0.5% by mass. The lower limit is not particularly limited, and 0% by mass is most preferred.

[0113] The member of the present disclosure can be manufactured using a known lamination method, etc. For example, a member in which at least a portion of the surface of material (a) is laminated with an insulating material can be manufactured by a manufacturing method including a step of laminating the insulating material on the surface of material (a) (hereinafter also referred to as a lamination step) and a step of drying (hereinafter also referred to as a drying step).

[0114] In the above-mentioned manufacturing method, the lamination step can be carried out by forming a film containing the above-mentioned insulating material on a part or all of the surface of the above-mentioned material (a) by a known method.

[0115] Specifically, a coating containing the insulating material can be formed on all or part of the surface of the material (a) by applying a coating composition containing the insulating material to the material (a).

[0116] The coating composition containing the insulating material may contain other known materials that can be blended into coating compositions, such as water, organic solvents, surfactants, pH adjusters, antifoaming agents, pigments (extender pigments, scaly pigments, etc.), pigment dispersants, thickeners, leveling agents, film-forming aids, solid lubricants, anti-settling agents, moisture absorbers, surface conditioners, thixotropic agents, viscosity modifiers, anti-gelling agents, UV absorbers, HALS (light stabilizers), matting agents, plasticizers, anti-color separation agents, anti-skinning agents, anti-scratch agents, rust inhibitors, mildew inhibitors, antibacterial agents, antioxidants, flame retardants, anti-sagging agents, anti-static agents, silane coupling agents, carbon black, various reinforcing agents, various extenders, conductive fillers, colloidal silica, metal powders such as gold, silver, copper, platinum, and stainless steel, and other common coating additives.

[0117] In a coating composition containing the insulating material, the content of the insulating material is preferably 50% by mass or more, more preferably 70% by mass or more, and is preferably 100% by mass or less, more preferably 95% by mass or less, and even more preferably 90% by mass or less, from the viewpoint of coating work, etc.

[0118] In the lamination step, various conventional coating methods can be used as the coating method (painting method), such as dipping, spraying, roll coating, doctor blade coating, flow coating, and spin coating.

[0119] In the manufacturing method, the lamination step is followed by the drying step, which can be carried out by drying the film formed in the lamination step using a known drying method.

[0120] In the drying step, the drying conditions may be appropriately set in consideration of the materials constituting the coating composition including the insulating material. For example, the drying temperature is preferably room temperature (20°C) to 200°C. The drying time is preferably 5 minutes to 36 hours.

[0121] After the drying step, a baking step may be carried out. In particular, when the heat-resistant resin is used as material (a), a baking step is preferably carried out from the viewpoint of chemical resistance. The baking conditions may be appropriately set taking into consideration the type of material (a) and insulating material. For example, the baking temperature is preferably 100 to 400°C, more preferably 150 to 250°C. The baking time is preferably 5 to 240 minutes, more preferably 10 to 120 minutes.

[0122] In the production of the member of the present disclosure, from the viewpoint of chemical resistance, the member is preferably produced under conditions of a temperature not exceeding the temperature at which the material (a) loses 1% by mass due to thermal decomposition. For example, in the production method, the lamination step and the drying step are preferably carried out under conditions of a temperature not exceeding the temperature at which the material (a) loses 1% by mass due to thermal decomposition.

[0123] In the member of the present disclosure, from the viewpoint of chemical resistance, the coating containing the insulating material preferably has a thickness of 0.1 to 500 μm. The lower limit of the thickness is more preferably 1 μm, and even more preferably 10 μm. The upper limit of the thickness is more preferably 300 μm, and even more preferably 100 μm.

[0124] The insulating material content of the coating (100% by mass) is preferably 90 to 100% by mass. The lower limit of the insulating material content is more preferably 92% by mass, and even more preferably 95% by mass. The upper limit of the insulating material content is more preferably 100% by mass, and even more preferably 98% by mass.

[0125] The semiconductor manufacturing related device of the present disclosure is preferably a semiconductor manufacturing related device equipped with the above-described member. By using the member of the present disclosure, excellent chemical resistance can be imparted to the device.

[0126] The semiconductor manufacturing-related device of the present disclosure is preferably one of the semiconductor manufacturing devices and related devices described above. Also, the semiconductor manufacturing-related device of the present disclosure is preferably at least one selected from the group consisting of semiconductor manufacturing devices and related devices for semiconductor manufacturing devices.

[0127] The semiconductor manufacturing equipment is preferably at least one selected from the group consisting of photolithography process equipment, thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, CVD equipment, thin film formation equipment, CMP equipment, processing equipment, aging equipment, and inspection equipment, and the semiconductor manufacturing equipment-related equipment is preferably at least one selected from the group consisting of pure water / chemical equipment, gas equipment, clean room equipment, and manufacturing-related equipment.

[0128] the photolithography process equipment is at least one selected from the group consisting of a coating equipment, a resist stripping equipment, a developing equipment (developer), and a descum equipment; the thin film formation / etching / cleaning / drying equipment is at least one selected from the group consisting of a vacuum deposition equipment, a cleaning equipment, a drying equipment, and a scrub cleaning equipment; the inspection / evaluation equipment / manufacturing equipment is a defect repair equipment; the resist processing equipment is at least one selected from the group consisting of a coating equipment, a developing equipment, a resist stripping equipment, and an ashing equipment; the etching equipment is at least one selected from the group consisting of a dry etching equipment and a wet etching equipment; the cleaning / drying equipment is at least one selected from the group consisting of a wet cleaning equipment, a scrub cleaning equipment, and a drying equipment; the CVD equipment is at least one selected from the group consisting of a high-pressure CVD equipment, a SACVD equipment, a low-pressure CVD equipment, a plasma CVD equipment, a metal CVD equipment, and an ALD equipment; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus; the processing apparatus is a bump plating apparatus; the aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus; the inspection apparatus is a life test apparatus; the pure water / chemical liquid apparatus is at least one selected from the group consisting of a chemical supply apparatus, a slurry supply apparatus, a chemical purification apparatus, and a waste liquid treatment apparatus; the gas apparatus is at least one selected from the group consisting of a gas generation apparatus, a gas purification apparatus, a gas mixing apparatus, a gas detection apparatus, and an exhaust gas treatment apparatus; the clean room apparatus is at least one selected from the group consisting of a thermal chamber and an environmental test apparatus; The manufacturing-related equipment is preferably at least one selected from the group consisting of jig cleaning / drying equipment, flow rate control equipment, packaging equipment, and liquid / gas measuring equipment.

[0129] Although the embodiments have been described above, it will be understood that various changes in form and details can be made without departing from the spirit and scope of the claims.

[0130] The present disclosure will now be described in more detail with reference to examples, but the present disclosure is not limited to these examples.

[0131] Various physical properties were measured by the following methods.

[0132] <Chemical Resistance Evaluation 1-1> In Chemical Resistance Evaluation 1-1, chemical resistance to acidic chemicals was evaluated under the test conditions listed in Table 1 by the following method. The test specimen was dried at 60°C for 2 hours. After drying, the mass of the test specimen before immersion was measured under room temperature (20°C). The test specimen after measurement was completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:5 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration) and held at room temperature (20°C) for 1 day (24 hours) or 1 week (168 hours). After holding, the test specimen was washed with pure water, water droplets on the surface were wiped off, and the specimen was dried at 60°C for 12 hours. The mass of the test specimen after immersion was measured under room temperature (20°C) conditions. The mass change rate (%) was calculated from the measured masses before and after immersion.

[0133] <Chemical Resistance Evaluation 1-2> In Chemical Resistance Evaluation 1-2, chemical resistance to acidic chemicals was evaluated under the test conditions listed in Table 1 by the following method. The test specimen was dried at 60°C for 2 hours. After drying, the mass of the test specimen before immersion was measured under room temperature (20°C). The test specimen after measurement was completely immersed in a mixed acid (hydrofluoric acid concentration: 50%, nitric acid concentration: 60%) with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:100 and held at room temperature (20°C) for 1 day (24 hours) or 1 week (168 hours). After holding, the test specimen was washed with pure water, water droplets on the surface were wiped off, and the specimen was dried at 60°C for 12 hours. The mass of the test specimen after immersion was measured under room temperature (20°C). The mass change rate (%) was calculated from the measured masses before and after immersion.

[0134] <Chemical Resistance Evaluation 2> In Chemical Resistance Evaluation 2, chemical resistance to basic chemicals was evaluated by the following method under the test conditions shown in Table 1. The test piece was dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion was measured under room temperature (20°C). After the measurement, the test piece was immersed in TMAH([(CH ３ ) ４ N] ＋ [OH] － The test pieces were completely immersed in a 25% concentration solution at 80°C and held for one week (168 hours). After holding, the test pieces were washed with pure water, water droplets on the surface were wiped off, and the test pieces were dried at 60°C for 12 hours. The mass of the test pieces after immersion was measured under room temperature (20°C). The mass change rate (%) was calculated from the measured masses before and after immersion.

[0135] The material (a) (substrate) and insulating material (coating agent) used in the examples and comparative examples are shown below. (Material (a)) PEEK: "VICTREX PEEK" manufactured by Victrex, dimensions: 10 mm x 50 mm x 2 mm, 1% thermal decomposition temperature: 553°C PPS: polyphenylene sulfide, MFR 125 g / 10 min, dimensions: 10 mm x 50 mm x 6 mm, 1% thermal decomposition temperature: 473°C (Insulating Materials) Coating agent 1: coating agent containing ceramic powder (Ceracoat 31 manufactured by Odec, ceramic material types: aluminosilicate, aluminum oxide, amorphous silica, ceramic material purity: 55% by mass) Coating agent 2: coating agent containing ceramic powder (N-TAC-XD1 manufactured by Shinagawa Fine Ceramics Co., Ltd., ceramic material types: zirconia, silica, cobalt oxide, organopolysiloxane, ceramic material purity: 74% by mass)

[0136] Examples 1, 4, 7, and 10 (Drying only) The surface of PEEK was roughened by shot blasting with alumina No. 24, and then irradiated with atmospheric pressure plasma. Coating agent 1 was applied using a spray gun at room temperature (20°C) to a target film thickness of 30 μm after drying (coating the entire surface of the PEEK). After coating, the PEEK was dried at room temperature (20°C) for one day to obtain a test piece (laminated member).

[0137] Examples 2, 5, 8, and 11 (with baking): The surface of PEEK was roughened by shot blasting with alumina No. 24, and then irradiated with atmospheric pressure plasma. Coating agent 1 was applied using a spray gun at room temperature (20°C), aiming for a film thickness of 30 μm after drying (coating on the entire surface of the PEEK). After coating, the material was dried at room temperature (20°C) for one day and baked at 180°C for 60 minutes to obtain a test piece (laminated member).

[0138] Examples 3, 6, 9, 12, 13, and 14 (with baking) A primer was applied to PEEK or PPS at room temperature (20°C), dried, and then Coating Agent 2 was applied by dip coating to a target film thickness of 30 μm (coating the entire surface of the PEEK or PPS). After coating, the material was dried at room temperature (25°C) and baked at 150°C for 1 hour to obtain a test piece (laminated member).

[0139] Example 15 (Drying Only) The surface of PPS was roughened by shot blasting with alumina No. 24, and then irradiated with atmospheric pressure plasma. Coating agent 1 was applied using a spray gun at room temperature (20°C) to a target film thickness of 30 μm after drying (coating the entire PPS surface). After coating, the PPS was dried at room temperature (20°C) for one day to obtain a test piece (laminated member).

[0140] Example 16 (with baking): The surface of PPS was roughened by shot blasting with alumina No. 24, and then irradiated with atmospheric pressure plasma. Coating agent 1 was applied using a spray gun at room temperature (20°C), aiming for a film thickness of 30 μm after drying (coated on the entire PPS surface). After coating, the PPS was dried at room temperature (20°C) for one day and baked at 180°C for 60 minutes to obtain a test piece (laminated member).

[0141] Comparative Examples 1 to 6 Test pieces were made of PEEK or PPS.

[0142]

[0143] The laminated members of the examples were suitable for use as members (components) in semiconductor manufacturing related equipment where chemicals are used.

Claims

1. A component in which at least a portion of the surface of material (a) is laminated with an insulating material, said component being at least one selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communications materials.

2. The component of claim 1, wherein said insulating material is a ceramic material.

3. The member according to claim 2, wherein said ceramic material is at least one selected from the group consisting of alumina, aluminosilicate, silicon carbide, silica, zirconia, cobalt oxide, and organopolysiloxane.

4. The member according to claim 2, wherein said ceramic material is at least one selected from the group consisting of alumina and organopolysiloxane.

5. The member according to any one of claims 2 to 4, wherein the purity of the ceramic material is 50% by mass or more.

6. The member according to any one of claims 1 to 5, wherein the material (a) is at least one selected from the group consisting of resin, rubber, metal and ceramic.

7. The member according to any one of claims 1 to 6, wherein the material (a) is at least one selected from the group consisting of resin and rubber.

8. The member according to any one of claims 1 to 7, wherein the material (a) is at least one selected from the group consisting of polyether ether ketone resin and polyphenylene sulfide.

9. A member according to any one of claims 1 to 8, wherein the temperature at which material (a) loses 1% by mass due to thermal decomposition is 560°C or less.

10. The member according to any one of claims 1 to 9, wherein the coating containing the insulating material has a thickness of 0.1 to 500 μm.

11. The member according to any one of claims 1 to 10, wherein the coating containing the insulating material has a thickness of 10 to 100 μm.

12. The member according to any one of claims 1 to 11, wherein the member is at least one selected from the group consisting of piping, nozzles, tubes, tanks, containers, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials.

13. The member according to any one of claims 1 to 12, which is a member for semiconductor manufacturing related equipment.

14. The member according to claim 13, wherein the semiconductor manufacturing related equipment is an equipment in which chemicals are used.

15. The chemical is TMAH([(CH ３ ) ４ N] ＋ [OH] － ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ O mixture), SC2 (HCl, H ２ O ２ and H ２ 15. The component of claim 14, wherein the acid is at least one selected from the group consisting of a mixture of ammonium hydroxide, ...

16. The member according to claim 14, wherein the chemical is at least one selected from the group consisting of silicon-based gas, arsenic-based gas, phosphorus-based gas, boron-based gas, metal hydride gas, metal alkyl gas, halogenated hydrocarbon gas, halogen-halide gas, nitrogen oxide gas, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

17. The component for semiconductor manufacturing related equipment according to any one of claims 14 to 16, wherein at least a portion of the surface that comes into contact with the chemical is laminated with the insulating material.

18. The component for semiconductor manufacturing related equipment is a component for semiconductor manufacturing related equipment in which chemicals are used within the equipment, and at least a portion of the surface that comes into contact with the chemicals is laminated with the insulating material.

19. A component according to any one of claims 1 to 18, wherein the mass change rate in the following chemical resistance evaluation is 50.0% by mass or less. (Chemical Resistance Evaluation) A test piece of the component (a test piece having a coating containing an insulating material laminated over the entire surface of material (a), material (a) size: 10 mm x 50 mm x 2 mm or 10 mm x 50 mm x 6 mm, coating thickness: 30 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C). After measurement, the test piece is completely immersed in a mixed acid of hydrofluoric acid and nitric acid with a concentration ratio (molar ratio) of 1:5 (hydrofluoric acid concentration: 50%, nitric acid concentration: 60%) and kept at room temperature (20°C) for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

20. A method for manufacturing a member according to any one of claims 1 to 19, wherein the member is manufactured under conditions of a temperature not exceeding the temperature at which the material (a) loses 1% by mass due to thermal decomposition.

21. A method for manufacturing a member according to claim 20, comprising the steps of laminating the insulating material on the surface of the material (a) and drying the material.

22. A semiconductor manufacturing related device equipped with a member according to any one of claims 1 to 19.

23. The semiconductor manufacturing related equipment according to claim 22, which is at least one selected from the group consisting of semiconductor manufacturing equipment and equipment related to semiconductor manufacturing equipment.

24. The semiconductor manufacturing related equipment according to claim 23, wherein the semiconductor manufacturing equipment is at least one selected from the group consisting of photolithography process equipment, thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, CVD equipment, thin film formation equipment, CMP equipment, processing equipment, aging equipment, and inspection equipment, and the semiconductor manufacturing equipment related equipment is at least one selected from the group consisting of pure water / chemical equipment, gas equipment, clean room equipment, and manufacturing related equipment.

25. The photolithography process equipment is at least one selected from the group consisting of a coating equipment, a resist stripping equipment, a developing equipment (developer), and a descum equipment; the thin film formation / etching / cleaning / drying equipment is at least one selected from the group consisting of a vacuum deposition equipment, a cleaning equipment, a drying equipment, and a scrub cleaning equipment; the inspection / evaluation equipment / manufacturing equipment is a defect repair equipment; the resist processing equipment is at least one selected from the group consisting of a coating equipment, a developing equipment, a resist stripping equipment, and an ashing equipment; the etching equipment is at least one selected from the group consisting of a dry etching equipment and a wet etching equipment; the cleaning / drying equipment is at least one selected from the group consisting of a wet cleaning equipment, a scrub cleaning equipment, and a drying equipment; the CVD equipment is at least one selected from the group consisting of a high-pressure CVD equipment, a SACVD equipment, a low-pressure CVD equipment, a plasma CVD equipment, a metal CVD equipment, and an ALD equipment; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus; the processing apparatus is a bump plating apparatus; the aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus; the inspection apparatus is a life test apparatus; the pure water / chemical liquid apparatus is at least one selected from the group consisting of a chemical supply apparatus, a slurry supply apparatus, a chemical purification apparatus, and a waste liquid treatment apparatus; the gas apparatus is at least one selected from the group consisting of a gas generation apparatus, a gas purification apparatus, a gas mixing apparatus, a gas detection apparatus, and an exhaust gas treatment apparatus; the clean room apparatus is at least one selected from the group consisting of a thermal chamber and an environmental test apparatus; 25. The semiconductor manufacturing related equipment according to claim 24, wherein the manufacturing related equipment is at least one selected from the group consisting of a jig cleaning / drying device, a flow control device, a packaging device, and a liquid / gas measuring device.

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