Substrate processing system and teaching method for conveyance robot

Abstract

One exemplary embodiment of the present invention provides a substrate processing system. A control unit is configured to execute (a), (b), (c), and (d). (a) includes a step for moving a plurality of lifter pins upward in order to lift a ring member disposed on a ring support surface and thereby autonomously guide the ring member so that the tips of the plurality of lifter pins are respectively positioned inside a plurality of recesses. (b) includes a step for moving the plurality of lifter pins downward in order to lower the lifted ring member onto the ring support surface. (c) includes a step for detecting the position of the ring member by means of a position detector. (d) includes a step for conveying a substrate to a substrate support surface on the basis of the position of the ring member.

Description

Substrate processing system and teaching method for transfer robot

[0001] SUMMARY An exemplary embodiment of the present disclosure relates to a substrate processing system and a method for teaching a transfer robot.

[0002] There is known a substrate processing system capable of performing various processes such as plasma processing on a substrate. The substrate processing system includes a process module and a transfer module. The process module has a chamber and a substrate support. The substrate support is provided in the chamber and supports a substrate placed thereon. Patent Document 1 listed below uses a camera to adjust the position of a substrate placed on the substrate support.

[0003] Special Publication No. 2022-520038

[0004] The present disclosure provides techniques for reducing substrate misalignment.

[0005] In one exemplary embodiment, a substrate processing system is provided. The substrate processing system includes a chamber, a substrate support, a transfer module, a controller, and a position detector. The chamber defines a processing space therein. The substrate support is disposed within the processing space. The transfer module has an end effector. The end effector is configured to support a substrate. The transfer module includes a transfer robot configured to transfer the substrate to the processing space. The controller is configured to control the substrate support and the transfer module. The substrate support includes a substrate support surface, a ring support surface, a plurality of lifter pins, and a drive unit. The substrate support surface is configured to support a substrate. The ring support surface extends to surround the substrate support surface and is configured to support a ring member. The plurality of lifter pins are configured to protrude upward from the ring support surface. The drive unit is configured to move the plurality of lifter pins up and down. The ring member defines a plurality of recesses corresponding to the plurality of lifter pins, respectively. The position detector is configured to detect the position of the ring member disposed on the ring support surface. The control unit is configured to execute (a), (b), (c), and (d). (a) includes controlling the drive unit to move the multiple lifter pins upward to lift a ring member disposed on the ring support surface from the ring support surface with the multiple lifter pins, thereby self-guiding the ring member so that tips of the multiple lifter pins are respectively positioned within the multiple recesses. (b) includes controlling the drive unit to move the multiple lifter pins downward to lower the ring member lifted by the lifter pins onto the ring support surface after (a). (c) includes, after (b), detecting the position of the ring member disposed on the ring support surface with a position detector. (d) includes, after (c), controlling the transfer module to transfer a substrate supported on the end effector to the substrate support surface based on the position of the ring member detected by the position detector.

[0006] According to one exemplary embodiment, deviations in the position at which the substrate is placed are reduced.

[0007] 7A is a diagram illustrating a substrate processing system according to an exemplary embodiment; FIG. 7B is a diagram illustrating an end effector according to an exemplary embodiment; FIG. 7C is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus; FIG. 7D is a diagram illustrating a schematic configuration of a plasma processing apparatus according to an exemplary embodiment; FIG. 7E is a diagram illustrating a partial enlarged cross-sectional view of a substrate support of a plasma processing apparatus according to an exemplary embodiment; FIG. 7F is a diagram illustrating a schematic configuration of a ring member according to an exemplary embodiment; FIG. 7G is a diagram illustrating a schematic cross-sectional view of a recess according to an exemplary embodiment; FIG. 7H is a diagram illustrating a schematic cross-sectional view of a recess according to an exemplary embodiment; FIG. 7H is a diagram illustrating a schematic cross-sectional view of a recess according to an exemplary embodiment; FIG. 7H is a diagram illustrating a schematic cross-sectional view of a recess according to an exemplary embodiment; FIG. 7H is a diagram illustrating a schematic cross-sectional view of a recess according to an exemplary embodiment; FIG. 7H is a diagram illustrating a schematic cross-sectional view of a recess according to an exemplary embodiment; FIG. 7H is a diagram illustrating a schematic cross-sectional view of a recess according to an exemplary embodiment; 10(b) is an enlarged cross-sectional view of one recess taken perpendicular to the circumferential direction according to yet another exemplary embodiment.FIG. 10(b) is a flowchart of a teaching method for a transfer robot according to an exemplary embodiment.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] FIG. 1 is a diagram showing a substrate processing system according to an exemplary embodiment. As shown in FIG. 1, the substrate processing system PS includes a transfer module VTM, a position detector PD, a controller MC, and multiple process modules PM1 to PM6. In one embodiment, the substrate processing system PS may further include a loader module LM and at least one load lock module. The at least one load lock module in the substrate processing system PS includes two load lock modules LL1 and LL2. The substrate processing system PS may further include at least one load port, a substrate inspection module CM, an aligner AN, and a storage unit SR. The at least one load port in the substrate processing system PS includes four load ports LP1 to LP4.

[0010] The loader module LM is an example of an atmospheric transfer module. In one embodiment, the loader module LM includes a transfer chamber ACH. The transfer chamber ACH is an example of another transfer chamber. The pressure inside the transfer chamber ACH of the loader module LM can be set to atmospheric pressure. The loader module LM may include a fan filter unit (FFU). The loader module LM is, for example, an equipment front end module (EFEM). The loader module LM is disposed between each of the load ports LP1 to LP4 and each of the load lock modules LL1 and LL2. The load ports LP1 to LP4 are arranged along one of a pair of longitudinal edges of the loader module LM. The load lock modules LL1 and LL2 are arranged along the other of a pair of longitudinal edges of the loader module LM. Each of the load ports LP1 to LP4 is configured to support a cassette CST placed thereon. The cassette CST is a container that accommodates a plurality of substrates W. The cassette CST is, for example, a front-opening unified pod (FOUP).

[0011] In one embodiment, the loader module LM includes a transport robot TR3. The transport robot TR3 is an example of another transport robot. The transport robot TR3 is provided in the transport chamber ACH of the loader module LM. The transport robot TR3 may include an articulated arm AR31 and an end effector FK31. The end effector FK31 is attached to the tip of the articulated arm AR31. The end effector FK31 is configured to support a substrate W. The transport robot TR3 is configured to transport the substrate W through the transport chamber ACH. For example, the transport robot TR3 transports the substrate W based on an operation instruction output by a controller MC, which will be described later. The transport robot TR3 transports the substrate W between any two of the cassettes CST, the load lock modules LL1 and LL2, the aligner AN, and the storage SR, which are placed on at least one of the load ports LP1 to LP4.

[0012] The aligner AN is disposed along one of a pair of edges along the shorter direction of the loader module LM. The aligner AN may be disposed along an edge along the longer direction of the loader module LM. Alternatively, the aligner AN may be disposed within the transfer chamber ACH of the loader module LM. The aligner AN includes a stage, an optical sensor, and the like. The stage of the aligner AN is rotatable and supports the substrate W placed thereon. The aligner AN detects the angular position of a marker (e.g., a notch) of the substrate W on the stage and the center position of the substrate W on the stage using the optical sensor. The controller MC controls the rotation of the stage of the aligner AN to correct the angular position of the marker (e.g., a notch) of the substrate W on the stage to a reference angular position so as to correct the amount of deviation in the angular position of the substrate W. Furthermore, the controller MC controls the position of the end effector FK31 when the end effector FK31 receives the substrate W from the aligner AN, in order to position the center of the substrate W on a predetermined position of the end effector FK31.

[0013] The storage SR is arranged along an edge along the longitudinal direction of the loader module LM. The storage SR may be arranged along an edge along the lateral direction of the loader module LM. Alternatively, the storage SR may be provided inside the loader module LM. The storage SR is configured to accommodate substrates W therein.

[0014] The substrate inspection module CM may be provided inside the loader module LM or the transport module VTM. The substrate inspection module CM may be connected to the loader module LM below the load ports LP1 to LP4. The substrate inspection module CM is not limited to the above locations and may be installed in any location. The substrate inspection module CM is configured to acquire an image of the substrate W.

[0015] In one embodiment, the load lock modules LL1 and LL2 are connected to the loader module LM. Each of the load lock modules LL1 and LL2 and the loader module LM may be connected via a gate valve G3. In the example shown in FIG. 1 , each of the load lock modules LL1 and LL2 and the transfer module VTM are connected via a gate valve G2. Each of the load lock modules LL1 and LL2 may be disposed between the transfer module VTM and the loader module LM. Each of the load lock modules LL1 and LL2 provides a preliminary decompression chamber.

[0016] The transfer module VTM has at least one transfer chamber and at least one transfer robot. In the example shown in Fig. 1, the transfer module VTM has a transfer chamber VCH and a transfer robot TR as the at least one transfer chamber and at least one transfer robot. The transfer chamber VCH is configured to be depressurizable. The transfer robot TR is configured to transfer a substrate W via the transfer chamber VCH.

[0017] Each of the process modules PM1 to PM6 has a chamber 10 and a substrate support 11 (see FIG. 3). The chamber 10 provides a processing space therein. The chamber 10 is connected to a transfer module VTM. In the example shown in FIG. 1, the process modules PM1 to PM6 are connected to the transfer module VTM via a gate valve G1. The transfer robot TR is configured to transfer a substrate W to the processing space 10s.

[0018] The transport robot TR may include articulated arms AR11 and AR12 and end effectors FK11 and FK12. The end effector FK11 is attached to the tip of the articulated arm AR11 and configured to support a substrate W. The end effector FK12 is attached to the tip of the articulated arm AR12 and configured to support a substrate W placed thereon. For example, the transport robot TR transports the substrate W based on operation instructions output by a controller MC (described later). The transport robot TR supports the substrate W using the end effectors FK11 and FK12. The transport robot TR is configured to transport the substrate W between the paths of the load lock modules LL1 and LL2 and the process modules PM1 to PM6. In one embodiment, the ring member R is an edge ring ER (focus ring) or a cover ring CR. The edge ring ER is used to surround the substrate W on the substrate support member 11. The covering ring CR is used to surround the edge ring ER. Details of the edge ring ER and the covering ring CR will be described later.

[0019] In one embodiment, each of the process modules PM1 to PM6 is configured to perform a dedicated process on a substrate W. At least one of the process modules PM1 to PM6 is a substrate processing apparatus such as the plasma processing apparatus 1 described below.

[0020] The controller MC is configured to control each part of the substrate processing system PS. The controller MC may be a computer including a processor, a storage device, an input device, a display device, etc. The controller MC executes a control program stored in the storage device and controls each part of the substrate processing system PS based on recipe data stored in the storage device. Transfer methods according to various exemplary embodiments, which will be described later, are performed in the substrate processing system PS by the controller MC controlling each part of the substrate processing system PS. The controller MC is configured to control the transfer module VTM and the substrate support 11. The controller MC may be connected to a position detector PD.

[0021] FIG. 2 is a diagram showing an end effector according to an exemplary embodiment. The end effector is also referred to as a transfer fork or a transfer pick. FIG. 2 shows the configuration of the end effector FK11 as an example, but the configuration of the end effector FK12 may also be used. The end effector FK11 has a horseshoe shape when viewed from the direction in which the substrate W is supported. In one embodiment, the end effector FK11 includes a main body portion FKM and a pair of tip portions FKB. The pair of tip portions FKB protrude from the main body portion FKM. A gap is defined between the pair of tip portions FKB. The substrate W is supported on the end effector FK11 so that its central axis passes through the gap.

[0022] In one embodiment, the position detector PD includes a pair of distance sensors FS1 and FS2. The pair of distance sensors FS1 and FS2 may be connected to the transport module VTM and / or the controller MC. In one example, the distance sensors FS1 and FS2 are optical fiber displacement sensors. In one embodiment, the pair of distance sensors FS1 and FS2 are respectively disposed on a pair of tip portions FKB. The tip FSa of each of the pair of distance sensors FS1 and FS2 is located on the pair of tip portions FKB.

[0023] Each of the distance sensors FS1 and FS2 measures the distance between its tip FSa and the object. Each of the distance sensors FS1 and FS2 emits measurement light to the object through its tip FSa and receives the reflected light. A unit controller (not shown) connected to the distance sensors FS1 and FS2 measures the distance from the tip FSa to the object. The unit controller may be part of the transport module VTM or the control unit MC. The tips FSa of the distance sensors FS1 and FS2 are positioned to emit measurement light downward toward the end effector FK11. In one example, when the distance between the tips FSa of the distance sensors FS1 and FS2 and the object becomes closer while the end effector FK11 is moving horizontally, the position detector PD detects the horizontal position of the object. The coordinates of the tip ends FSa of the distance sensors FS1 and FS2 on the transport module VTM when the distance between the tip ends FSa of the distance sensors FS1 and FS2 and the object becomes close may be acquired as the position of the object.

[0024] 3 and 4 will be referred to below. The plasma processing system shown in Fig. 3 can be employed as a part of a substrate processing system PS. The example of the plasma processing apparatus shown in Fig. 4 is employed as at least one of the process modules PM1 to PM12.

[0025] FIG. 3 is a diagram illustrating an example configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0026] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0027] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN). The control unit 2 may also function as the control unit MC.

[0028] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 4 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0029] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0030] The substrate support 11 includes a main body 5. In one embodiment, the substrate support may include a ring member R. The main body 5 has a central region 5a for supporting a substrate W and an annular region 5b for supporting the ring member R. A wafer is an example of a substrate W. The annular region 5b of the main body 5 surrounds the central region 5a of the main body 5 in a plan view. The substrate W is disposed on the central region 5a of the main body 5, and the ring member R is disposed on the annular region 5b of the main body 5 so as to surround the substrate W on the central region 5a of the main body 5. Therefore, the central region 5a is also called a substrate support surface for supporting the substrate W, and the annular region 5b is also called a ring support surface for supporting the ring member R.

[0031] In one embodiment, the main body 5 includes a base 50 and an electrostatic chuck 51. The base 50 includes a conductive member. The conductive member of the base 50 can function as a lower electrode. The electrostatic chuck 51 is disposed on the base 50. The electrostatic chuck 51 includes a ceramic member 51a and an electrostatic electrode 51b disposed within the ceramic member 51a. The ceramic member 51a has a central region 5a. In one embodiment, the ceramic member 51a also has an annular region 5b. Note that another member surrounding the electrostatic chuck 51, such as an annular electrostatic chuck or an annular insulating member, may also have the annular region 5b. In this case, the ring member R may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 51 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power source 31 and / or a DC power source 32 (described later) may be disposed within the ceramic member 51a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. The conductive member of the base 50 and at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 51b may function as the lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0032] The ring member R includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings ER and at least one cover ring CR. The edge rings ER are formed of a conductive or insulating material, and the cover rings CR are formed of an insulating material.

[0033] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 51, the ring member R, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 50a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 50a. In one embodiment, the flow path 50a is formed in the base 50, and one or more heaters are disposed in the ceramic member 51a of the electrostatic chuck 51. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 5a.

[0034] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0035] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0036] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0037] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0038] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0039] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0040] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0041] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0042] Reference is now made to FIG. 5 , which is a partially enlarged cross-sectional view of a substrate support unit of a plasma processing apparatus according to an exemplary embodiment. The substrate support unit 11 includes a substrate support surface 51 c and a ring support surface 51 d. The substrate support surface 51 c is configured to support a substrate W. The substrate support surface 51 c is a substantially circular surface. The ring support surface 51 d is configured to support a ring member R. The ring support surface 51 d is an annular surface extending around and outside the substrate support surface 51 c. In one embodiment, the ring support surface 51 d is located lower than the substrate support surface 51 c. A step is formed between the substrate support surface 51 c and the ring support surface 51 d. In one embodiment, the position of the edge of the substrate support surface 51 c may be detected by a position detector PD.

[0043] The electrostatic chuck 51 includes a substrate support surface 51c and a ring support surface 51d. The electrostatic chuck 51 is configured to electrostatically attract and hold the substrate W on the substrate support surface 51c and the edge ring ER on the ring support surface 51d. The edge ring ER is an example of a ring member R. The edge ring ER has an annular shape. The substrate W is placed within a region surrounded by the edge ring ER. The edge ring ER is made of a conductive material such as silicon or silicon carbide. The edge ring ER may also be made of an insulating material such as quartz. The position of the edge ring ER is detected by a position detector PD.

[0044] The electrostatic chuck 51 includes a dielectric portion 51e, a first chuck electrode 51f, and a second chuck electrode 51g. The dielectric portion 51e is made of a ceramic such as aluminum oxide. The dielectric portion 51e has a generally disk shape and provides a substrate support surface 51c and a ring support surface 51d.

[0045] The first chuck electrode 51f and the second chuck electrode 51g are disposed in the dielectric portion 51e and below the substrate support surface 51c. When a voltage is applied to the first chuck electrode 51f, the electrostatic chuck 51 generates an electrostatic force to attract and hold the substrate W to the substrate support surface 51c. The second chuck electrode 51g is disposed in the dielectric portion 51e and below the ring support surface 51d. When a voltage is applied to the second chuck electrode 51g, the electrostatic chuck 51 generates an electrostatic force to attract and hold the edge ring ER to the ring support surface 51d. In the illustrated example, the electrostatic chuck 51 includes a monopolar electrostatic chuck for holding the substrate W and a bipolar electrostatic chuck for holding the edge ring ER. However, a bipolar electrostatic chuck may be used instead of the monopolar electrostatic chuck, and a monopolar electrostatic chuck may be used instead of the bipolar electrostatic chuck.

[0046] A cover ring CR is disposed outside the edge ring ER so as to surround the edge ring ER. The cover ring CR is an example of a ring member R. The cover ring CR has an annular shape. The cover ring CR covers the upper surface of the insulator 27. The cover ring CR is formed of an insulating material such as quartz. The cover ring CR may also be formed of a conductive material such as silicon or silicon carbide. The outer periphery of the edge ring ER is disposed so as to overlap with the inner periphery of the cover ring CR when viewed from above. Furthermore, the outer periphery of the cover ring CR is disposed outside the outer periphery of the edge ring ER and surrounds the outer periphery of the edge ring ER.

[0047] The substrate support unit 11 includes a plurality of lifter pins 71 and a drive unit 72. The lifter pins 71 are configured to protrude upward from the ring support surface 51d. The drive unit 72 is configured to move the lifter pins 71 up and down. The lifter pins 71 are inserted into a plurality of through holes 71h formed in the base 50 and the insulator 27. The cover ring CR may have a plurality of holes CRh through which the lifter pins 71 are inserted. The drive unit 72 may be, for example, a motor such as a DC motor, a stepping motor, or a linear motor; an air-driven mechanism such as an air cylinder; or a piezoelectric actuator. The control unit MC raises and lowers the lifter pins 71 when transferring the ring member R between the transport robot TR and the substrate support unit 11.

[0048] In one embodiment, the substrate support part 11 may include a plurality of lifter pins 73 and a drive part 74. The plurality of lifter pins 73 are configured to be able to protrude upward from the substrate support surface 51c. The drive part 74 is configured to move the plurality of lifter pins 73 up and down. The plurality of lifter pins 73 are inserted into a plurality of through holes 73h formed in the base 50 and the electrostatic chuck 51, respectively. The drive part 74 may have a configuration similar to that of the drive part 72. The control part MC raises and lowers the plurality of lifter pins 73 when transferring the substrate W between the transport robot TR and the substrate support part 11.

[0049] Reference will now be made to FIGS. 6 , 7( a ), and 7 ( b ). FIG. 6 is a diagram schematically illustrating the configuration of a ring member according to one exemplary embodiment. The ring member R provides a plurality of recesses 8 corresponding to the plurality of lifter pins 71, respectively. Below, an edge ring ER providing a plurality of recesses 8 will be described as an example of the ring member R. The plurality of recesses 8 may be arranged at equal intervals around the circumference of the edge ring ER. In one embodiment, the plurality of recesses 8 includes three or more recesses 8. In the example shown in FIG. 6 , the plurality of recesses 8 includes three recesses 8.

[0050] In one embodiment, each of the plurality of recesses 8 includes a first width W1 and a second width W2. The first width W1 is aligned along the radial direction D1 of the edge ring ER. The second width W2 is aligned along the circumferential direction D2 of the edge ring ER. As shown in FIG. 6 , the first width W1 may be greater than the second width W2. Each of the plurality of recesses 8 may have a groove shape extending along the radial direction D1. The first width W1 and the second width W2 are greater than the diameter of the tip 71 a of each of the plurality of lifter pins 71. Each of the plurality of recesses 8 is configured so that the tip 71 a of each of the plurality of lifter pins 71 is positioned therein. Note that the first width W1 and the second width W2 may be defined at the opening 8 a of each of the plurality of recesses 8 or at the bottom surface of each of the plurality of recesses 8.

[0051] 7A is an enlarged cross-sectional view perpendicular to the radial direction of one recess according to one exemplary embodiment. FIG. 7B is an enlarged cross-sectional view perpendicular to the circumferential direction of one recess according to one exemplary embodiment. In one embodiment, an inner surface 80 defining each of the plurality of recesses 8 may include a tapered surface 81. The tapered surface 81 widens as it approaches the opening 8a of each of the plurality of recesses 8. In one embodiment, as shown in FIG. 7A, in a cross section perpendicular to the radial direction D1, the inner surface 80 is curved so as to widen as it approaches the opening 8a. The tip 71a of each of the plurality of lifter pins 71 is curved along the curved inner surface 80.

[0052] Hereinafter, with reference to FIGS. 8A and 8B, a description will be given of a plurality of recesses 8A according to another exemplary embodiment. FIG. 8A is an enlarged cross-sectional view perpendicular to the radial direction of one recess according to another exemplary embodiment. FIG. 8B is an enlarged cross-sectional view perpendicular to the circumferential direction of one recess according to another exemplary embodiment. In another embodiment, as shown in FIG. 8A, in a cross section perpendicular to the radial direction D1, the inner surface 80 is curved at a rear portion 82 farthest from the opening 8a. In one embodiment, the inner surface 80 from the opening 8a to the rear portion 82 may be a tapered surface 81. In a cross section perpendicular to the radial direction D1, the radius of curvature of the rear portion 82 is smaller than the radius of curvature of each of the tips 71a of the plurality of lifter pins 71. In the plurality of recesses 8A, a gap is defined between the rear portion 82 of the inner surface 80 and each of the tips 71a of the plurality of lifter pins 71. In the recesses 8A, the tip 71 a of each of the lifter pins 71 faces the tapered surface 81 .

[0053] Hereinafter, with reference to FIGS. 9A and 9B, a plurality of recesses 8B according to yet another exemplary embodiment will be described. FIG. 9A is an enlarged cross-sectional view perpendicular to the radial direction of one recess according to yet another exemplary embodiment. FIG. 9B is an enlarged cross-sectional view perpendicular to the circumferential direction of one recess according to yet another exemplary embodiment. In yet another embodiment, as shown in FIG. 9A, in a cross section perpendicular to the radial direction D1, the inner surface 80 includes a tapered surface 81 and a flat surface 83. As described above, the tapered surface 81 widens as it approaches the opening 8a of each of the plurality of recesses 8. The flat surface 83 faces the tips 71a of each of the plurality of lifter pins 71. The tapered surface 81 and the flat surface 83 are continuous. In the plurality of recesses 8B, the tips 71a of each of the plurality of lifter pins 71 face the flat surface 83 of the inner surface 80. The tips 71a of each of the plurality of lifter pins 71 may be aligned along the flat surface 83 of the inner surface 80.

[0054] Hereinafter, with reference to FIGS. 10A and 10B , a description will be given of a plurality of recesses 8C according to yet another exemplary embodiment. FIG. 10A is an enlarged cross-sectional view perpendicular to the radial direction of one recess according to yet another exemplary embodiment. FIG. 10B is an enlarged cross-sectional view perpendicular to the circumferential direction of one recess according to yet another exemplary embodiment. In yet another embodiment, as shown in FIG. 10A , in a cross section perpendicular to the radial direction D1, the inner surface 80 includes a tapered surface 81, a flat surface 84, and an inner wall surface 85. As described above, the tapered surface 81 widens as it approaches the opening 8a of each of the plurality of recesses 8. The flat surface 84 faces the tips 71a of the plurality of lifter pins 71. The tips 71a of the plurality of lifter pins 71 may be aligned with the flat surface 84 of the inner surface 80. The inner wall surface 85 connects the tapered surface 81 and the flat surface 84. The inner wall surface 85 extends along the direction in which the plurality of lifter pins 71 move. In the example shown in FIG. 10( a ), the inner wall surface 85 extends in the vertical direction.

[0055] FIG. 11 is a flowchart of a method for teaching a transport robot according to an exemplary embodiment. The method for teaching a transport robot is performed using a substrate processing system PS. An example of a method for teaching a transport robot (hereinafter referred to as "method MT") will be described below with reference to FIG. 11. The controller MC is configured to execute the method MT. Note that the method MT may also be performed using a substrate processing system other than the substrate processing system PS. In the method MT, teaching is performed on the transport robot TR of the transport module VTM. In this teaching, a path for the transport robot TR to transport a substrate W during substrate processing is taught. In the method MT, a dummy substrate may be used instead of the substrate W. In the method MT described below, an edge ring ER is used as an example of a ring member R.

[0056] The method MT is started after the edge ring ER is placed on the ring support surface 51 d. The edge ring ER may be placed on the ring support surface 51 d by an operator. In one embodiment, the method MT may include step ST1. When the method MT includes step ST1, the method MT starts from step ST1. In step ST1, the processing space 10 s is depressurized. The controller MC may control the exhaust system 40 to depressurize the processing space 10 s. Since the method MT starts from step ST1, any misalignment of the edge ring ER and / or the substrate W caused by the depressurization of the processing space 10 s is resolved in a subsequent step.

[0057] After step ST1, step ST2 is performed. In step ST2, the edge ring ER, which is arranged on the ring support surface 51d, is lifted from the ring support surface 51d by the plurality of lifter pins 71, and the plurality of lifter pins 71 are moved upward to self-guidably guide the edge ring ER so that the tips of the plurality of lifter pins 71 are respectively positioned within the plurality of recesses 8. The control unit MC may control the driving unit 72 to move the plurality of lifter pins 71 upward. In step ST2, the positional deviation of the edge ring ER arranged on the ring support surface 51d is corrected to a position defined by the plurality of lifter pins 71 and the plurality of recesses 8 of the edge ring ER.

[0058] After step ST2, step ST3 is performed. In step ST3, the plurality of lifter pins 71 are moved downward to lower the edge ring ER lifted by the plurality of lifter pins 71 onto the ring support surface 51 d. The controller MC may control the drive unit 72 to move the plurality of lifter pins 71 downward.

[0059] In one embodiment, each of step ST2 and step ST3 may be performed multiple times. The controller MC may control the driver 72 to alternately repeat the operation of lifting the edge ring ER from the ring support surface 51 d and the operation of lowering the edge ring ER onto the ring support surface 51 d. This can eliminate any misalignment of the edge ring ER on the ring support surface 51 d that is not eliminated by a single execution of step ST2 and step ST3.

[0060] After step ST3, step ST4 is performed. In step ST4, the position of the edge ring ER arranged on the ring support surface 51d is detected by the position detector PD. In one embodiment, step ST4 may include step ST41. In step ST41, the center position of the edge ring ER is estimated from the position of the edge ring ER detected by the position detector PD. In one example, the center position of the edge ring ER may be estimated based on the edges of two or more edge rings ER detected by the pair of distance sensors FS1 and FS2 and the diameter of the edge ring ER stored in advance. The center position of the edge ring ER may be estimated from the circumcenter of a triangle based on the edges of three or more edge rings ER detected by the pair of distance sensors FS1 and FS2. The edge of the edge ring ER may be the inner edge of the edge ring ER or the outer edge of the edge ring ER.

[0061] In one embodiment, the method MT may include steps ST42 and ST43. In step ST42, the center position of the substrate support surface 51c is estimated from the edge position of the substrate support surface 51c detected by the position detector PD. In one example, the center position of the substrate support surface 51c may be estimated based on the edges of two or more substrate support surfaces 51c detected by the pair of distance sensors FS1 and FS2 and a pre-stored diameter of the substrate support surface 51c. The center position of the substrate support surface 51c may be estimated from the circumcenter of a triangle based on the edges of three or more substrate support surfaces 51c detected by the pair of distance sensors FS1 and FS2. In step ST43, the deviation between the center position of the edge ring ER estimated in step ST41 and the center position of the substrate support surface 51c estimated in step ST42 is obtained.

[0062] In one embodiment, if the deviation is greater than the threshold in step ST43, steps ST2, ST3, ST41, ST42, and ST43 may be repeated at least once. In the example shown in Fig. 11, if the determination in step ST43 is "NO" and the number of times the determination in step ST43 is "NO" until the end of method MT is three or less (n≦3), steps ST2, ST3, ST41, ST42, and ST43 are repeated.

[0063] In one embodiment, if the deviation in step ST43 is greater than a threshold, step ST5 is executed to issue a warning. In the example shown in Fig. 11, if the determination in step ST43 is "NO" and the number of times the determination in step ST43 is "NO" until the end of method MT is greater than three (n>3), step ST5 is executed. Method MT ends after step ST5.

[0064] In an embodiment, step ST6 may be performed after step ST3. In step ST6, the edge ring ER on the ring support surface 51 d is held by the electrostatic chuck 51. The controller MC may be configured to control the electrostatic chuck 51 to hold the edge ring ER on the ring support surface 51 d. In the example shown in FIG. 11 , step ST6 is performed after step ST43 if the determination in step ST43 is "YES."

[0065] After step ST4, step ST7 is performed. In step ST7, the substrate W supported on the end effectors FK11 and FK12 is transported to the substrate support surface 51c based on the position of the edge ring ER detected by the position detector PD. The controller MC may be configured to control the transport module VTM to transport the substrate W to the substrate support surface 51c. Step ST7 may include steps ST71, ST72, and ST73. In step ST71, the substrate W is placed on lifter pins 73 protruding above the substrate support surface 51c based on the position of the edge ring ER detected by the position detector PD. In step ST72, the lifter pins 73 are moved downward to lower the substrate W placed on the lifter pins 73 onto the substrate support surface 51c. In step ST73, the position of the substrate W lowered onto the substrate support surface 51c in step ST72 is detected by the position detector PD.

[0066] In one embodiment, step ST7 may include step ST7a. In step ST7a, the substrate W is transported so that the center position of the substrate W estimated from the positions of the end effectors FK11 and FK12 coincides with the center position of the edge ring ER estimated in step ST41. In one example, the center position of the substrate W is estimated from the coordinate positions of the end effectors FK11 and FK12 on the transport module VTM. The controller MC may be configured to control the transport module VTM so that the center position of the substrate W coincides with the center position of the edge ring ER. In step ST73, the center position of the substrate W may be estimated. In step ST73, a deviation between the center position of the substrate W and the center position of the edge ring ER and / or the substrate support surface 51c may be obtained. After step ST7, the method MT ends.

[0067] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0068] The position detector may be a contact sensor or a non-contact sensor. A distance sensor is an example of a non-contact sensor. The position detector may be an imaging element. The imaging element may be disposed within the chamber 10.

[0069] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E18] below.

[0070] [E1] A chamber providing a processing space therein; a substrate support disposed within the processing space; a transfer module including a transfer robot having an end effector configured to support a substrate and configured to transfer the substrate to the processing space; a controller configured to control the substrate support and the transfer module; and a position detector, wherein the substrate support has: a substrate support surface configured to support the substrate; a ring support surface extending to surround the substrate support surface and configured to support a ring member; a plurality of lifter pins configured to be able to protrude upward from the ring support surface; and a drive unit configured to move the plurality of lifter pins up and down, wherein the ring member provides a plurality of recesses respectively corresponding to the plurality of lifter pins, and the position detector is configured to detect the position of the ring member disposed on the ring support surface, and the controller (a) controlling the drive unit to move the plurality of lifter pins upward so as to lift the ring member disposed on the ring support surface from the ring support surface with the plurality of lifter pins, thereby self-guiding the ring member so that tips of the plurality of lifter pins are respectively positioned within the plurality of recesses; (b) controlling the drive unit to move the plurality of lifter pins downward so as to lower the ring member lifted by the plurality of lifter pins onto the ring support surface after (a); (c) detecting the position of the ring member disposed on the ring support surface with the position detector after (b); and (d) controlling the transport module to transport the substrate supported on the end effector to the substrate support surface based on the position of the ring member detected by the position detector after (c).

[0071] [E2] The substrate processing system according to E1, wherein the control unit is configured to execute a step of depressurizing the processing space before (a).

[0072] [E3] The substrate processing system according to E1 or E2, wherein the control unit is configured to perform each of (a) and (b) a plurality of times.

[0073] [E4] The substrate processing system according to any one of E1 to E3, wherein (c) includes (c1) a step of estimating a center position of the ring member from the position of the ring member detected by the position detector, and (d) includes (d1) a step of controlling the transfer module so that the center position of the substrate estimated from the position of the end effector coincides with the center position of the ring member estimated in (c1).

[0074] [E5] The substrate processing system described in E4, wherein the ring support surface is positioned lower than the substrate support surface, the position detector is configured to detect an edge of the substrate support surface, and the control unit is configured to perform the steps of: (c2) estimating a center position of the substrate support surface from the position of the edge of the substrate support surface detected by the position detector; and (c3) acquiring a deviation between the center position of the ring member estimated in (c1) and the center position of the substrate support surface estimated in (c2).

[0075] [E6] The substrate processing system according to E5, wherein the control unit is configured to repeat the steps (a), (b), (c1), (c2), and (c3) at least once when the deviation is greater than a threshold value in the step (c3).

[0076] [E7] The substrate processing system according to E5 or E6, wherein in (c3), the control unit is configured to execute a step of issuing a warning when the deviation is greater than a threshold value.

[0077] [E8] The substrate processing system according to any one of E1 to E7, wherein the substrate support unit includes an electrostatic chuck configured to hold the substrate on the substrate support surface and the ring support surface, and to hold the ring member on the ring support surface, respectively, and the control unit is configured to execute: (b1) a step between (b) and (c) of controlling the electrostatic chuck to electrostatically attract and hold the ring member on the ring support surface.

[0078] [E9] The substrate processing system according to any one of E1 to E8, wherein the position detector includes a pair of distance sensors, the end effector has a main body and a pair of tip portions protruding from the main body, a gap is defined between the pair of tip portions, and the pair of distance sensors are respectively disposed at the pair of tip portions.

[0079] [E10] The substrate processing system according to any one of E1 to E9, wherein the substrate support further includes the ring member.

[0080] [E11] The substrate processing system according to any one of E1 to E10, wherein the plurality of recesses includes three or more recesses.

[0081] [E12] The substrate processing system according to any one of E1 to E11, wherein each of the plurality of recesses includes a first width along a radial direction of the ring member and a second width along a circumferential direction of the ring member, and the first width is greater than the second width.

[0082] [E13] The substrate processing system according to any one of E1 to E12, wherein an inner surface defining each of the plurality of recesses includes a tapered surface that widens as it approaches the opening of each of the plurality of recesses.

[0083] [E14] The substrate processing system according to any one of E1 to E13, wherein, in a cross section perpendicular to the radial direction of the ring member, an inner surface defining each of the plurality of recesses is curved so as to widen as it approaches the opening of each of the plurality of recesses, and the tip of each of the plurality of lifter pins is curved along the inner surface.

[0084] [E15] A substrate processing system described in any one of E1 to E14, wherein, in a cross section perpendicular to the radial direction of the ring member, the inner surfaces defining each of the plurality of recesses are curved at the innermost portions farthest from the openings of each of the plurality of recesses, and in the cross section, the radius of curvature of the innermost portions is smaller than the radius of curvature of the tips of each of the plurality of lifter pins.

[0085] [E16] The substrate processing system according to any one of E13 to E15, wherein inner surfaces defining each of the plurality of recesses include flat surfaces facing the tips of each of the plurality of lifter pins, and the tapered surfaces and the flat surfaces are continuous.

[0086] [E17] The substrate processing system according to any one of E13 to E16, wherein an inner surface defining each of the plurality of recesses includes: a flat surface facing the tip ends of each of the plurality of lifter pins; and an inner wall surface extending along a direction in which the plurality of lifter pins move and connecting the tapered surface and the flat surface.

[0087] [E18] A method of teaching a transfer robot executed in a substrate processing system, the substrate processing system comprising: a chamber providing a processing space therein; and a substrate support portion arranged in the processing space, the substrate support portion having: a substrate support surface configured to support a substrate; a ring support surface extending to surround the substrate support surface and configured to support a ring member; and a plurality of lifter pins configured to be able to protrude upward from the ring support surface, the ring member providing a plurality of recesses, the method of teaching the transfer robot comprising: (a) a step of upwardly moving the plurality of lifter pins to lift the ring member arranged on the ring support surface from the ring support surface by the plurality of lifter pins, thereby guiding the ring member self-guidedly so that tips of the plurality of lifter pins are respectively positioned within the plurality of recesses; and (b) a step of downwardly moving the plurality of lifter pins to lower the ring member lifted by the plurality of lifter pins after (a) onto the ring support surface. (c) after (b), detecting the position of the ring member placed on the ring support surface; and (d) after (c), transporting the substrate to the substrate support surface based on the detected position of the ring member.

[0088] E18 may be performed using the substrate processing system described in any one of E1 to E17.

[0089] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

[0090] 1...plasma processing apparatus, 8, 8A, 8B, 8C...recess, 8a...opening, 10...chamber, 10s...processing space, 11...substrate support portion, 51...electrostatic chuck, 51c...substrate support surface, 51d...ring support surface, 71, 73...lifter pins, 71a, FSa...tip, 80...inner surface, 81...tapered surface, 82...rear portion, 83, 84...flat surface, 85...inner wall surface, D1...radial direction, D2...circumferential direction, FK11, FK12, FK31...end effector, FKB...tip portion, FKM...main body, FS1, FS2...distance sensor, MC...controller, PD...position detector, PS...substrate processing system, R...ring member, VTM...transfer module, W...substrate, W1...first width, W2...second width.

Claims

1. A device comprising: a chamber providing a processing space therein; a substrate support disposed within the processing space; a transfer module including a transfer robot having an end effector configured to support a substrate and configured to transfer the substrate to the processing space; a controller configured to control the substrate support and the transfer module; and a position detector, wherein the substrate support has: a substrate support surface configured to support the substrate; a ring support surface extending to surround the substrate support surface and configured to support a ring member; a plurality of lifter pins configured to be able to protrude upward from the ring support surface; and a drive unit configured to move the plurality of lifter pins up and down, wherein the ring member provides a plurality of recesses respectively corresponding to the plurality of lifter pins, and the position detector is configured to detect the position of the ring member disposed on the ring support surface, and the controller (a) controlling the drive unit to move the plurality of lifter pins upward so as to lift the ring member disposed on the ring support surface from the ring support surface with the plurality of lifter pins, thereby self-guiding the ring member so that tips of the plurality of lifter pins are respectively positioned within the plurality of recesses; (b) controlling the drive unit to move the plurality of lifter pins downward so as to lower the ring member lifted by the plurality of lifter pins onto the ring support surface after (a); (c) detecting the position of the ring member disposed on the ring support surface with the position detector after (b); and (d) controlling the transport module to transport the substrate supported on the end effector to the substrate support surface based on the position of the ring member detected by the position detector after (c).

2. The substrate processing system according to claim 1, wherein the control unit is configured to execute a step of depressurizing the processing space before (a).

3. The substrate processing system according to claim 1, wherein the control unit is configured to perform each of (a) and (b) multiple times.

4. The substrate processing system of claim 1, wherein (c) includes (c1) a step of estimating the center position of the ring member from the position of the ring member detected by the position detector, and (d) includes (d1) a step of controlling the transport module so that the center position of the substrate estimated from the position of the end effector coincides with the center position of the ring member estimated in (c1).

5. The substrate processing system of claim 4, wherein the ring support surface is positioned lower than the substrate support surface, the position detector is configured to detect an edge of the substrate support surface, and the control unit is configured to perform the steps of: (c2) estimating a center position of the substrate support surface from the position of the edge of the substrate support surface detected by the position detector; and (c3) obtaining a deviation between the center position of the ring member estimated in (c1) and the center position of the substrate support surface estimated in (c2).

6. The substrate processing system according to claim 5, wherein the control unit is configured to repeat the steps (a), (b), (c1), (c2), and (c3) at least once if the deviation is greater than a threshold value in the step (c3).

7. The substrate processing system according to claim 5, wherein the control unit is configured to execute a step of issuing a warning when the deviation is greater than a threshold value in (c3).

8. The substrate processing system of claim 1, wherein the substrate support unit includes an electrostatic chuck configured to hold the substrate on the substrate support surface and the ring support surface, and to hold the ring member on the ring support surface, respectively; and the control unit is configured to execute the following step: (b1) between steps (b) and (c), controlling the electrostatic chuck to electrostatically attract and hold the ring member on the ring support surface.

9. The substrate processing system of claim 1, wherein the position detector includes a pair of distance sensors, the end effector has a main body and a pair of tip portions protruding from the main body, a gap is defined between the pair of tip portions, and the pair of distance sensors are respectively disposed at the pair of tip portions.

10. The substrate processing system according to any one of claims 1 to 9, wherein the substrate support further comprises the ring member.

11. The substrate processing system of claim 10, wherein the plurality of recesses includes three or more recesses.

12. The substrate processing system of claim 10, wherein each of the plurality of recesses includes a first width along the radial direction of the ring member and a second width along the circumferential direction of the ring member, the first width being greater than the second width.

13. The substrate processing system according to claim 10, wherein the inner surfaces defining each of the plurality of recesses include tapered surfaces that widen as they approach the opening of each of the plurality of recesses.

14. A substrate processing system as described in claim 10, wherein, in a cross section perpendicular to the radial direction of the ring member, the inner surfaces defining each of the plurality of recesses are curved so as to widen as they approach the opening of each of the plurality of recesses, and the tip of each of the plurality of lifter pins is curved along the inner surface.

15. A substrate processing system as described in claim 10, wherein, in a cross section perpendicular to the radial direction of the ring member, the inner surfaces defining each of the plurality of recesses are curved at the innermost portion farthest from the opening of each of the plurality of recesses, and the radius of curvature of the innermost portion in the cross section is smaller than the radius of curvature of the tip of each of the plurality of lifter pins.

16. The substrate processing system according to claim 13, wherein the inner surfaces defining each of the plurality of recesses include flat surfaces facing the tips of each of the plurality of lifter pins, and the tapered surfaces and the flat surfaces are continuous.

17. A substrate processing system as described in claim 13, wherein the inner surfaces defining each of the plurality of recesses include: a flat surface facing the tips of each of the plurality of lifter pins; and an inner wall surface extending along the direction in which the plurality of lifter pins move and connecting the tapered surface and the flat surface.

18. A method of teaching a transfer robot executed in a substrate processing system, the substrate processing system comprising: a chamber providing a processing space therein; and a substrate support portion arranged in the processing space, the substrate support portion having: a substrate support surface configured to support a substrate; a ring support surface extending to surround the substrate support surface and configured to support a ring member; and a plurality of lifter pins configured to be able to protrude upward from the ring support surface, the ring member providing a plurality of recesses, the method of teaching the transfer robot comprising: (a) a step of upwardly moving the plurality of lifter pins to lift the ring member arranged on the ring support surface from the ring support surface by the plurality of lifter pins, thereby guiding the ring member self-guidedly so that tips of the plurality of lifter pins are respectively positioned within the plurality of recesses; (b) a step of downwardly moving the plurality of lifter pins to lower the ring member lifted by the plurality of lifter pins after (a) onto the ring support surface; (c) after (b), detecting the position of the ring member placed on the ring support surface; and (d) after (c), transporting the substrate to the substrate support surface based on the detected position of the ring member.

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