Photoelectric conversion element, photoelectric conversion module, and photoelectric conversion system

Abstract

A photoelectric conversion element (10) comprises: a bottom substrate (11); a photoelectric conversion unit (PE) provided on the bottom substrate (11) and including a photoelectric conversion layer (15) containing a perovskite compound; a sealing layer (18) provided in a region above the bottom substrate (11) where the photoelectric conversion unit (PE) is not present; and an inactive layer (19) formed between the bottom substrate (11) and the sealing layer (18).

Description

Photoelectric conversion element, photoelectric conversion module, and photoelectric conversion system

[0001] The present disclosure relates to a photoelectric conversion element, a photoelectric conversion module, and a photoelectric conversion system that use a perovskite compound.

[0002] Solar cells (perovskite solar cells) including a photoelectric conversion layer (organic active layer) using a perovskite compound have been attracting attention. Perovskite solar cells require sealing of the photoelectric conversion unit including the photoelectric conversion layer because the performance of the photoelectric conversion layer deteriorates when exposed to the outside air, moisture, and the like. Patent Document 1 discloses a perovskite solar cell equipped with a barrier layer (sealing layer) that covers a photoelectric conversion element with an inorganic material.

[0003] Patent No. 7016806

[0004] The barrier layer seals the photoelectric conversion element or the photoelectric conversion module, and is generally made of a resin material.

[0005] The sealing layer in a perovskite solar cell is formed between an upper substrate and a lower substrate, but if the adhesion to the substrate (or other contact layers between the substrates) is poor, sufficient sealing cannot be achieved, which could lead to a decrease in cell performance.

[0006] The present disclosure has been made in consideration of the above-mentioned problems, and aims to provide a photoelectric conversion element, a photoelectric conversion module, and a photoelectric conversion system that can improve adhesion between a sealing layer and other contact layers.

[0007] In order to solve the above problems, the following photoelectric conversion element, photoelectric conversion module, and photoelectric conversion system are provided.

[0008] (1) Photoelectric conversion element The photoelectric conversion element of the present disclosure is characterized by having a base, a photoelectric conversion unit provided on the base and including a photoelectric conversion layer containing a perovskite compound, a sealing layer provided on an area of ​​the base where the photoelectric conversion unit is not present, and an adhesion auxiliary layer formed between the base and the sealing layer.

[0009] While a sealing layer and an adhesion auxiliary layer are essential components of a photoelectric conversion element, it is not necessary to have one sealing layer per photoelectric conversion unit. It is acceptable for a photoelectric conversion module having multiple photoelectric conversion units (details below) to have one sealing layer. In other words, a photoelectric conversion element refers to an element having at least a base, a photoelectric conversion unit, a sealing layer, and an adhesion auxiliary layer. Even a photoelectric conversion module having multiple photoelectric conversion units that shares a sealing layer and an adhesion auxiliary layer (e.g., the photoelectric conversion module shown in FIG. 8) can be said to be a photoelectric conversion element and a photoelectric conversion module, which is one form of a photoelectric conversion element. Unless otherwise specified, "on the base" does not necessarily mean being in contact with the base and can include being above the base. In other words, "on the base" means either above the base that is in contact with the base or above the base that is not in contact with the base. In this disclosure, "on" also means the same thing when referring to something other than the base.

[0010] (2) Photoelectric Conversion Module The photoelectric conversion module of the present disclosure is characterized in that the photoelectric conversion element has a base, a photoelectric conversion unit provided on the base and including a photoelectric conversion layer containing a perovskite compound, a sealing layer provided on an area of ​​the base where the photoelectric conversion unit is not present, and an adhesion auxiliary layer formed between the base and the sealing layer, and the photoelectric conversion unit is provided in a plurality of photoelectric conversion units, and the plurality of photoelectric conversion units are connected in series.

[0011] That is, a photoelectric conversion element having multiple photoelectric conversion units connected in series is called a photoelectric conversion module. In a photoelectric conversion module, multiple photoelectric conversion units can share a seal. That is, it is not necessary to seal each photoelectric conversion unit and then connect them. For example, in a photoelectric conversion module in which a certain number of photoelectric conversion units are connected, as in the photoelectric conversion module shown in FIG. 8, the certain number of photoelectric conversion units can be collectively sealed.

[0012] (3) Photoelectric Conversion System A photoelectric conversion system according to the present disclosure includes the photoelectric conversion module described above and a control circuit.

[0013] The photoelectric conversion element, photoelectric conversion module, and photoelectric conversion system of the present disclosure enable improved adhesion between the sealing layer and other contact layers.

[0014] FIG. 10 is a cross-sectional view showing a schematic configuration of a photoelectric conversion element of the first embodiment. FIG. 11 is a cross-sectional view showing a modified example of the photoelectric conversion element of the first embodiment. FIG. 12 is a cross-sectional view showing another modified example of the photoelectric conversion element of the first embodiment. FIG. 13 is a cross-sectional view showing yet another modified example of the photoelectric conversion element of the first embodiment. FIG. 14 is a cross-sectional view showing a schematic configuration of a photoelectric conversion element of a second embodiment. FIG. 15 is a cross-sectional view showing a schematic configuration of a photoelectric conversion element of a third embodiment. FIG. 16 is a plan view of a photoelectric conversion module according to the present disclosure. FIG. 17 is a cross-sectional view of the photoelectric conversion module shown in FIG. 7. FIG. 18 is a circuit diagram of the photoelectric conversion module shown in FIG. 7. FIG. 19 is a schematic view of a photoelectric conversion system according to the present disclosure.

[0015] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. Fig. 1 shows an embodiment of the present disclosure and is a cross-sectional view illustrating a schematic configuration of a photoelectric conversion element 10. As shown in Figs.

[0016] As shown in FIG. 1 , a photoelectric conversion element 10 has an upper substrate 11 and a lower substrate (base) 12, with a photoelectric conversion member PE sandwiched between them. The photoelectric conversion member PE in FIG. 1 is configured by stacking a lower electrode 13, an electron transport layer 14, a photoelectric conversion layer 15, a hole transport layer 16, and an upper electrode 17 in this order (starting from the lower substrate 12 side in FIG. 1 ). The stacking order does not necessarily have to be this order (forward structure type); the order of the electron transport layer and the hole transport layer may be reversed (inverted structure type). That is, the hole transport side may be on the bottom and the electron transport side may be on the top. In this disclosure, the electron transport layer is described as being of a forward structure type; however, in the case of an inverted structure type, it may be replaced with a hole transport layer unless inconsistent.

[0017] The photoelectric conversion unit refers to the portion of the photoelectric conversion element (excluding the substrate) that includes at least a photoelectric conversion layer and may include an upper electrode and a lower electrode, and that exists in the region where the photoelectric conversion layer is present when the photoelectric conversion layer is viewed in a planar view (meaning a view perpendicular to the surface of the substrate, as in the present disclosure) (the overlapping region with the upper electrode and the lower electrode, if an upper electrode and a lower electrode are present). For example, as shown in the cross-sectional views of Figures 1 to 6, the portion outside the width of the photoelectric conversion layer indicated by photoelectric conversion unit PE is not the photoelectric conversion unit. The photoelectric conversion layer refers to the portion that functions as the part responsible for the photoelectric conversion function of the photoelectric conversion element, and can be understood from its positional relationship with the components that constitute the photoelectric conversion element or photoelectric conversion module. In other words, the region without the photoelectric conversion unit can refer to the region outside the region where the photoelectric conversion layer responsible for the photoelectric conversion function of the photoelectric conversion element or photoelectric conversion module is viewed in a planar view (meaning a view perpendicular to the surface of the substrate, as in the present disclosure). The photoelectric conversion element 10 does not necessarily have to have the upper substrate 11 or the lower substrate (base) 12, and may optionally have one of them or neither if the functions of the two substrates are replaced by other materials.

[0018] In this embodiment, the lower surface of the photoelectric conversion element 10 is the light-receiving surface, and the lower surface of the photoelectric conversion layer 15 (including the side below the photoelectric conversion layer 15, similarly in this disclosure) is transparent. That is, in this embodiment, the electron transport side (or negative electrode side, similarly in this disclosure) is transparent. For example, the lower substrate 12 is a transparent substrate, and the lower electrode 13 is a transparent electrode. The photoelectric conversion layer 15 is an active layer that converts light energy into electrical energy by absorbing light, and contains a perovskite compound. Note that the lower surface does not necessarily have to be the light-receiving surface; the upper surface may also be the light-receiving surface, in which case the upper surface of the photoelectric conversion layer 15 (including the side above the photoelectric conversion layer 15, similarly in this disclosure; in this embodiment, the hole transport side) may be transparent. Furthermore, both the upper and lower surfaces may be light-receiving surfaces, and the lower surface of the photoelectric conversion layer 15 and the upper surface of the photoelectric conversion layer are transparent.

[0019] Incidentally, transparency or light transmissivity means that light can pass through, but does not exclude those that reflect or absorb even a small amount of light, and it is sufficient that the material is provided on the light-receiving surface side of the photoelectric conversion element 10 and can transmit light appropriately, and can be considered to be synonymous with being provided on the light-receiving surface side of the photoelectric conversion element 10. Therefore, being provided at least on the light-receiving surface side of the photoelectric conversion element 10 can be considered to be transparent.

[0020] In the photoelectric conversion element 10, the photoelectric conversion element PE is shielded from external air and moisture by a sealing layer 18. The sealing layer 18 is provided in an area between the upper substrate 11 and the lower substrate 12 where the photoelectric conversion element PE is not present, and is formed so as to surround the periphery of the photoelectric conversion element PE in a plan view seen along a direction perpendicular to the surfaces of the substrates. An inactive layer 19 is also provided between the sealing layer 18 and the lower substrate 12. In this embodiment, of the layers forming the photoelectric conversion element PE, the lower electrode 13 and the electron transport layer 14 extend outside the area of ​​the photoelectric conversion element PE and are formed on almost the entire surface of the lower substrate 12, and the inactive layer 19 is formed in contact with the electron transport layer 14. In the photoelectric conversion element 10, the inactive layer 19 functions as an adhesion auxiliary layer to improve adhesion between the sealing layer 18 and the electron transport layer 14.

[0021] The term "inactive" means that the material does not absorb light to generate electrons and holes, or at least does not generate them efficiently. For example, this is different from the perovskite compound used in the photoelectric conversion layer 15.

[0022] Furthermore, the adhesion auxiliary layer refers to a layer including an inactive layer 19 that exists in the portion where the sealing layer 18 comes into close contact with another material and that assists adhesion. For example, the presence of the adhesion auxiliary layer in the portion where the sealing layer 18 comes into close contact with another material may assist adhesion to the extent that the perovskite photoelectric conversion element has sufficient adhesion for commercialization. In other words, the degree of adhesion of the adhesion auxiliary layer is sufficient as long as a perovskite photoelectric conversion element having an adhesion auxiliary layer present in the portion where the sealing layer 18 comes into close contact with another material can be commercialized, and there is no need to confirm the physical property values.

[0023] An example of a method for manufacturing the photoelectric conversion element 10 of this embodiment will be described below. First, a procedure for forming the photoelectric conversion element PE on the lower substrate 12 will be described.

[0024] The lower substrate 12 is also referred to as a substrate, base material, or substrate, and may be the same as or include any of these. The lower substrate 12 may be hard and highly rigid, or may be flexible and less rigid. When the lower substrate is used as the light-receiving surface, the lower substrate 12 may be made of a light-transmitting material. For example, glass may be used, or a resin film such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polyimide. The upper substrate 17 may also be made of various materials similar to the lower substrate 12 described herein. However, when only the lower substrate 12 is used as the light-receiving surface, the upper substrate 17 may be hard and highly rigid, or may be flexible and less rigid; it does not need to be made of a light-transmitting material. It is also possible for both substrates to be made of light-transmitting materials, so that the photoelectric conversion element 10 itself is light-transmitting.

[0025] A lower electrode 13 is formed on the lower substrate 12. The lower electrode 13 is made of a light-transmitting conductive material, such as ITO, ZnO, FTO, or SnO. ２ A transparent conductive material such as IZO can be used. The lower electrode 13 may be formed on the lower substrate 12 by a known method such as sputtering or vapor deposition. The thickness of the lower electrode 13 is, for example, 30 nm to 1000 nm.

[0026] An electron transport layer 14 is formed on the lower electrode 13. The electron transport layer 14 is a layer that has the function of transporting electrons generated in the photoelectric conversion layer 15. It is self-evident that the electron transport layer 14 on the negative electrode side of the photoelectric conversion layer 15 (including the negative electrode side of the photoelectric conversion layer 15, as in the present disclosure) has the function of transporting electrons as long as the photoelectric conversion element 10 functions, and no confirmation is required. In other words, as long as the photoelectric conversion element 10 functions as a photoelectric conversion element, the layer on the negative electrode side of the photoelectric conversion layer 15 is referred to as the electron transport layer. The negative electrode side can also be referred to as the electron transport side. The electron transport layer 14 can be made of tin oxide, titanium oxide, zinc oxide, or the like. The electron transport layer 14 may be formed by a known method such as spin coating or sputtering.

[0027] A photoelectric conversion layer 15 is formed on the electron transport layer 14. The photoelectric conversion layer is a layer that converts light into electricity. For example, a perovskite compound can be used as the photoelectric conversion layer 15. The photoelectric conversion layer 15 may be formed by a known film formation method such as spin coating, die coating, or inkjet printing. The thickness of the photoelectric conversion layer 15 is, for example, 100 nm or more and 1000 nm or less. As long as the photoelectric conversion element 10 has a photoelectric conversion function, it is a natural consequence that the photoelectric conversion layer 15 is present in the photoelectric conversion element 10. Therefore, as long as the photoelectric conversion element 10 has a photoelectric conversion function, there is no need to confirm the photoelectric conversion function of the layer itself to confirm the presence of the photoelectric conversion layer 15, provided that the appropriate material is used.

[0028] The perovskite compound is composed of a compound represented by the general formula: ABX3 (1). However, while the composition ratio of each element is preferably 1:1:3, it does not necessarily have to be 1:1:3. The content of each element may vary as appropriate, and each constituent element does not necessarily have to be of a single type. As long as the photoelectric conversion element 10 has a photoelectric conversion function, there is a degree of freedom in the configuration as described above. In general formula (1), A is an organic molecule (including an organic group or an organic cation, the same applies in this disclosure) or an inorganic atom (including an inorganic cation, the same applies in this disclosure), or a combination thereof; B is a metal atom (including a metal cation, the same applies in this disclosure); and X is a halogen atom (including a halogen anion, the same applies in this disclosure). In general formula (1), the three Xs may be the same or different from each other. When contained in the photoelectric conversion layer 15, a perovskite compound can absorb light and convert it into electricity, and this fact should be taken into consideration. That is, a perovskite compound can be confirmed by, for example, detecting organic molecules, metal atoms, and halogen atoms. Furthermore, a perovskite compound can be confirmed by detecting elements corresponding to A, B, and X, as long as the photoelectric conversion element has a photoelectric conversion function. For example, molecules containing carbon, nitrogen, and hydrogen are suitable as organic molecules, and therefore, carbon, nitrogen, hydrogen, metal elements, and halogen elements can be detected. Alternatively, a perovskite compound can be confirmed by detecting A, B, and X, for example, detecting inorganic atoms, metal atoms, and halogen atoms. Furthermore, a perovskite compound can be confirmed by detecting elements corresponding to A, B, and X, as long as the photoelectric conversion element has a photoelectric conversion function. For example, cesium or rubidium is suitable as inorganic atoms, and therefore, cesium or rubidium, metal elements (preferably lead or tin), and halogens can be detected. Furthermore, the presence of a perovskite compound is not required because it is a natural consequence that a photoelectric conversion element must have a crystalline structure in order to have a photoelectric conversion function.The photoelectric conversion layer may contain compounds other than perovskite compounds.

[0029] Unless otherwise specified, the thickness or width of a layer is not specified, and it includes a pattern or island shape, or a layer having portions of different thickness. Preferably, a layer has a substantially constant thickness.

[0030] Unless otherwise specified, the terms "approximately" and "about" refer to the margin of manufacturing error, and preferentially indicate that a variation of plus or minus 15% of the numerical value is permitted.

[0031] In general formula (1), examples of the organic molecule represented by A include alkylamine, alkylammonium, and nitrogen-containing heterocyclic compounds. In the perovskite compound (1), the organic molecule represented by A may be only one type of organic molecule, or may be two or more types of organic molecules.

[0032] Examples of alkylamines include methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, dimethylamine, diethylamine, dipropylamine, dibutylamine, dipentylamine, dihexylamine, trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, trihexylamine, ethylmethylamine, methylpropylamine, butylmethylamine, methylpentylamine, hexylmethylamine, ethylpropylamine, and ethylbutylamine.

[0033] The alkylammonium is an ionized product of the alkylamine. Examples of the alkylammonium include methylammonium (CH3NH3), ethylammonium, propylammonium, butylammonium, pentylammonium, hexylammonium, dimethylammonium, diethylammonium, dipropylammonium, dibutylammonium, dipentylammonium, dihexylammonium, trimethylammonium, triethylammonium, tripropylammonium, tributylammonium, tripentylammonium, trihexylammonium, ethylmethylammonium, methylpropylammonium, butylmethylammonium, methylpentylammonium, hexylmethylammonium, ethylpropylammonium, and ethylbutylammonium.

[0034] Examples of the nitrogen-containing heterocyclic compound include imidazole, azole, pyrrole, aziridine, azirine, azetidine, azeto, azole, imidazoline, and carbazole. The nitrogen-containing heterocyclic compound may be an ionized compound. Phenethylammonium is preferred as the ionized nitrogen-containing heterocyclic compound.

[0035] In general formula (1), the organic molecule represented by A is preferably methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, methylammonium, ethylammonium, propylammonium, butylammonium, pentylammonium, hexylammonium, or phenethylammonium, more preferably methylamine, ethylamine, propylamine, methylammonium, ethylammonium, or propylammonium, and even more preferably methylammonium.

[0036] In general formula (1), examples of the metal atom represented by B include lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, and europium. In the perovskite compound, the metal atom represented by B may be only one type of metal atom, or may be two or more types of metal atoms. From the viewpoint of improving the light absorption properties and charge generation properties of the perovskite compound, the metal atom represented by B is preferably a lead atom or a tin atom. From the viewpoint of reducing lead, a tin atom is preferred.

[0037] In addition, in general formula (1), examples of halogen atoms represented by X include fluorine atoms, chlorine atoms, bromine atoms, and iodine atoms, and examples of chalcogen atoms include oxygen atoms, sulfur atoms, selenium atoms, and tellurium atoms. In the perovskite compound, the halogen atoms or chalcogen atoms represented by X may be one type or two or more types. As the halogen atom represented by X, an iodine atom is preferred from the viewpoint of enabling the perovskite compound to utilize light in a wide wavelength range. Specifically, of the three Xs, it is preferred that at least one X represents an iodine atom, and it is more preferred that all three Xs represent iodine atoms.

[0038] In the perovskite compound contained in the photoelectric conversion layer 15, in general formula (1), A is preferably one or more selected from the group consisting of cesium, rubidium, methylammonium, and formamidinium. In addition, in general formula (1), B is preferably one or more selected from the group consisting of lead and tin. In addition, in general formula (1), C is preferably one or more selected from the group consisting of iodine, bromine, and chlorine.

[0039] A hole transport layer 16 is formed on the photoelectric conversion layer 15. The hole transport layer 16 is a layer that has the function of transporting holes. As long as the photoelectric conversion element 10 functions, it is self-evident that the hole transport layer 16 on the positive electrode side of the photoelectric conversion layer 15 (including the positive electrode side of the photoelectric conversion layer, as in the present disclosure) has the function of transporting holes, and no confirmation is required. In other words, as long as the photoelectric conversion element 10 functions, the layer on the positive electrode side of the photoelectric conversion layer 15 is referred to as the hole transport layer. The positive electrode side may also be referred to as the hole transport side. Examples of materials that can be used for the hole transport layer 16 include spiro-OMeTAD (2,2',7,7'-Tetrakis(N,N-di-p-methoxyphenylamino)-9,9'-spirobifluorene), PTAA (Poly[bis(4-phenyl)(2,4,6-triMethylphenyl)amine]), P3HT (Poly(3-hexylthiophene-2,5-diyl)), poly-TPD (Poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine]), and PEDOT (Poly(3,4-EthyleneDiOxyThiophene)):PSS (Poly(4-StyreneSulfonate)). The hole transport layer 16 may be formed by a known film formation method such as spin coating, die coating, or inkjet printing. The thickness of the hole transport layer 16 is, for example, 40 nm to 600 nm. In order to improve the durability of the photoelectric conversion element 10, it is also preferable to use an inorganic material for the hole transport layer 16, such as nickel oxide or copper oxide.

[0040] An upper electrode 17 is formed on the hole transport layer 16. The upper electrode 17 preferably contains a metal or alloy containing at least one of Au, Ag, Cu, and Al. Alternatively, the upper electrode 17 may be made of ITO, ZnO, FTO, SnO, or the like. ２Alternatively, a transparent conductive material such as IZO may be used. The upper electrode 17 may be formed by a known method such as vapor deposition, sputtering, spin coating, die coating, or inkjet printing. The thickness of the upper electrode 17 is, for example, 50 nm to 300 nm. The upper electrode 17 may be made of a conductive material such as graphite, graphene, carbon nanowires, carbon nanofibers, carbon nanotubes, or carbon black. Basically, any material having conductivity may be used.

[0041] Next, in the peripheral region of the lower substrate 12 (region other than the photoelectric conversion member PE), the stacked portion from the photoelectric conversion layer 15 to the upper electrode 17 is etched and removed by wet etching, dry etching, laser scribing, mechanical scribing, or the like, to pattern the photoelectric conversion member PE. At this time, at least a part of the electron transport layer 14 is exposed in the etched region. At this time, the lower electrode 13 and the electron transport layer 14 may also be etched together, in which case at least a part of the lower substrate 12 is exposed.

[0042] Next, a procedure for forming the sealing layer 18 and the inactive layer 19 around the photoelectric conversion member PE will be described. In the area around the photoelectric conversion member PE, the inactive layer 19 is formed on the electron transport layer 14 exposed by the etching. Furthermore, the sealing layer 18 is formed on the inactive layer 19. For the sealing layer 18, for example, a UV-curable resin, a thermosetting resin, polyisobutylene, or the like can be used.

[0043] Thereafter, the upper substrate 11 is provided on the sealing layer 18 so that the photoelectric conversion element PE is sandwiched between the lower substrate 12 and the upper substrate 11. As a result, the photoelectric conversion element PE is surrounded by the lower substrate 12, the sealing layer 18, the upper substrate 11, etc., and is isolated (sealed) from the outside.

[0044] In the photoelectric conversion element 10 of this embodiment, by forming the inactive layer 19 between the sealing layer 18 and the electron transport layer 14, the adhesion (bonding strength) between the sealing layer 18 and the electron transport layer 14 is improved, thereby improving the durability of the photoelectric conversion element 10. The inactive layer 19 can be preferably formed as a layer as follows: The inactive layer 19 preferably has a higher electrical resistance in a direction parallel to the substrate surface than the photoelectric conversion layer 15. Unless otherwise specified in this disclosure, "high electrical resistance" means "high electrical resistance in a direction parallel to the substrate surface." This allows the inactive layer 19 to improve the insulation of the photoelectric conversion element PE from the outside. Furthermore, it is more preferable that the inactive layer 19 has a higher electrical resistance than the photoelectric conversion layer 15 under light irradiation. This allows the inactive layer 19 to improve the insulation of the photoelectric conversion element PE from the outside, even under light irradiation. Furthermore, the inactive layer 19 preferably contains a material with a higher electrical resistivity than the photoelectric conversion layer 15. Furthermore, it is more preferable that the inactive layer 19 contains a material having a higher electrical resistivity under light irradiation than the photoelectric conversion layer 15. It is also preferable that the inactive layer 19 is made of a material having a higher electrical resistivity under light irradiation than the photoelectric conversion layer 15. It is also preferable that the inactive layer 19 is made of a material having a higher electrical resistivity under light irradiation than the photoelectric conversion layer 15. It is also preferable that the inactive layer 19 contains an insulator. It is also more preferable that the inactive layer 19 is made of an insulator. The inactive layer 19 can be formed, for example, by evaporating lead iodide after etching the peripheral region of the lower substrate 12. The inactive layer 19 is preferably formed in a discontinuous island shape. For example, the discontinuous island shape can be formed by spraying a precursor solution using a spray method. The inactive layer 19 preferably has a non-perovskite structure. In this case, the electrical resistance of the inactive layer 19 tends to be high, making it easier to insulate it from the outside. Note that a non-perovskite structure refers to a crystal structure different from that of a perovskite compound, including amorphous structures. The inactive layer 19 is preferably amorphous. In this case, the electrical resistance of the inactive layer 19 tends to be high, which makes it easier to insulate the layer from the outside. The inactive layer 19 may contain at least one of an inorganic oxide and an inorganic nitride.The inactive layer 19 may be an inorganic oxide, an inorganic nitride, or an inorganic oxynitride. The inactive layer 19 may contain at least one of silicon oxide or silicon nitride. The inactive layer 19 may be silicon oxide, silicon nitride, or silicon oxynitride. In this case, the inactive layer 19 can be formed by, for example, a sputtering method, a CVD method, or the like. The inactive layer 19 may contain at least one of lead iodide, lead bromide, tin iodide, and tin bromide. The inactive layer 19 may also be lead iodide, lead bromide, tin iodide, or tin bromide. In this case, the inactive layer can be formed by, for example, a vapor deposition method, a spray method, or the like.

[0045] FIG. 2 is a cross-sectional view showing a modified example of the photoelectric conversion element 10 according to this embodiment. As shown in FIG. 2, the sealing layer 18 may be formed to fill the gap between the upper substrate 11 and the lower substrate 12 without any gaps. That is, the sealing layer 18 may be formed to cover the entire surface of the photoelectric conversion element PE. In this case, the inactive layer 19 may be formed over the entire area surrounding the photoelectric conversion element PE, or may be formed over only a portion of the area surrounding the photoelectric conversion element PE. Note that if the photoelectric conversion element 10 is a photoelectric conversion module or the like and has components between the two substrates other than the photoelectric conversion element PE (for example, if it has regions P1, P2, P3, etc. corresponding to the cutouts as shown in FIG. 8), even if the sealing layer 18 fills the gap between the upper substrate 11 and the lower substrate 12 without any gaps, the sealing layer 18 does not necessarily cover the entire surface of the photoelectric conversion element PE in direct contact with the components other than the photoelectric conversion element PE. Instead, the sealing layer 18 covers the components other than the photoelectric conversion element PE.

[0046] 3 is a cross-sectional view showing another modified example of the photoelectric conversion element 10 according to this embodiment. As shown in FIG. 3, in the photoelectric conversion member PE, the lower electrode 13, the electron transport layer 14, the photoelectric conversion layer 15, the hole transport layer 16, and the upper electrode 17 may all be patterned in the same region in a planar view. That is, the lower electrode 13 and the electron transport layer 14 do not need to be formed extending outside the region of the photoelectric conversion member PE as in the example of FIG. 1. In this case, the inactive layer 19 is formed in contact with the lower electrode 13.

[0047] 1 , when the lower electrode 13 and the electron transport layer 14 are formed so as to extend outside the region of the photoelectric conversion member PE, patterning of the lower electrode 13 and the electron transport layer 14 is not required, which simplifies the manufacturing process of the photoelectric conversion element 10 and reduces manufacturing costs. However, in this case, the material of the electron transport layer 14 must be selected from the perspective of improving the element performance of the photoelectric conversion member PE, and there is no freedom in selecting a material to improve adhesion with the sealing layer 18. Therefore, it is effective to apply the configuration of the present disclosure, which interposes an inert layer 19 between the electron transport layer 14 and the sealing layer 18 to improve adhesion of the sealing layer 18.

[0048] 4 is a cross-sectional view showing yet another modified example of the photoelectric conversion element 10 according to this embodiment. As shown in FIG. 4 , the inactive layer 19 may be provided not only between the sealing layer 18 and the lower substrate 12 but also between the sealing layer 18 and the upper substrate 11. However, in this embodiment, the upper substrate 11 has a higher degree of freedom in material selection than the electron transport layer 14 (or the hole transport layer 16 in the third embodiment) or the lower substrate 12, which is a transparent substrate. Therefore, the upper substrate 11 itself can easily be made of a material that has high adhesion to the sealing layer 18, and it is also possible to omit the inactive layer 19 between the sealing layer 18 and the upper substrate 11.

[0049] Second Embodiment Fig. 5 is a cross-sectional view showing a schematic configuration of a photoelectric conversion element 10 according to this embodiment. As shown in Fig. 5, the inactive layer 19 may be formed in the form of a plurality of discrete islands, rather than being a layer formed to a uniform thickness. Other than that, the configuration may be the same as that of the first embodiment, including modified examples.

[0050] When the inactive layer 19 is formed in an island shape in this manner, the contact area between the inactive layer 19 and the sealing layer 18 increases, and it is possible to further improve the adhesion (bonding strength) between the sealing layer 18 and the lower substrate 12. Furthermore, when the inactive layer 19 is formed discretely, it is possible to further improve the insulation between the photoelectric conversion element PE and the outside.

[0051] Third Embodiment Fig. 6 is a cross-sectional view showing a schematic configuration of a photoelectric conversion element 10 according to this embodiment. The photoelectric conversion element 10 shown in Fig. 6 has a configuration in which the positions of the electron transport layer 14 and the hole transport layer 16 are swapped with respect to the photoelectric conversion element 10 shown in Fig. 1. That is, in the photoelectric conversion element PE, the hole transport layer 16 may be formed between the lower electrode 13 and the photoelectric conversion layer 15, and the electron transport layer 14 may be formed between the upper electrode 17 and the photoelectric conversion layer 15. Other than that, the configuration can be the same as that of the first embodiment, including the modified examples.

[0052] Furthermore, it is not essential that the photoelectric conversion member PE include both the electron transport layer 14 and the hole transport layer 16, and the photoelectric conversion member PE may include only one of the electron transport layer 14 and the hole transport layer 16. Alternatively, both the electron transport layer 14 and the hole transport layer 16 may be omitted from the photoelectric conversion member PE.

[0053] Furthermore, when the photoelectric conversion element 10 is provided with an electron transport layer 14 or a hole transport layer 16, and the electron transport layer 14 or the hole transport layer 16 is a layer that exists between the inactive layer 19 and the lower substrate 12, it is preferable that the layer be made of an inorganic material.

[0054] Fourth Embodiment In this embodiment, a photovoltaic conversion module and a photovoltaic conversion system according to the present disclosure will be described. Fig. 7 is a plan view of a photovoltaic conversion module 100 according to the present disclosure, with the upper substrate 11 omitted. Fig. 8 is a cross-sectional view of the photovoltaic conversion module 100 taken along line VIII-VIII in Fig. 7. However, the upper substrate 11 is not omitted in Fig. 8.

[0055] The photoelectric conversion module 100 refers to a photoelectric conversion element 10 having a plurality of photoelectric conversion units PE connected in series. In other words, the photoelectric conversion module 100 is one form of the photoelectric conversion element 10. In the photoelectric conversion module 100, the sealing layer 18 is provided in common for the plurality of photoelectric conversion units PE. Any of the photoelectric conversion elements 10 described in the first to third embodiments can be used in the photoelectric conversion module 100, and FIG. 8 illustrates a photoelectric conversion module 100 to which the photoelectric conversion element 10 of FIG. 1 is applied.

[0056] The photoelectric conversion module 100 is patterned by several cuts, and has regions P1, P2, and P3 corresponding to these cut locations, as shown in Fig. 7. In Fig. 7, the upper electrode 17 and the lower electrode 13 (or the electron transport layer 14) included in the photoelectric conversion element PE are present on the surface.

[0057] As shown in Figure 8, the notch in region P1 is formed by etching away the lower electrode 13, and separates the lower electrodes 13 of two adjacent photoelectric conversion elements PE (for example, photoelectric conversion element elements PEa and PEb in Figure 8).

[0058] The notches in region P2 are formed by etching away the electron transport layer 14, the photoelectric conversion layer 15, and the hole transport layer 16, and are provided to electrically connect two adjacent photoelectric conversion members PE (for example, photoelectric conversion members PEa and PEb in FIG. 8 ). That is, in region P2, the material of the upper electrode 17 is filled into the formed notches, thereby connecting the upper electrode 17 of one photoelectric conversion member PE (for example, photoelectric conversion member PEa) to the lower electrode 13 of the other photoelectric conversion member PE (for example, photoelectric conversion member PEb).

[0059] The notch in region P3 is formed by patterning the photoelectric conversion layer 15, the hole transport layer 16, and the upper electrode 17, and is provided to separate the upper electrodes 17 of two adjacent photoelectric conversion elements PE (e.g., photoelectric conversion elements PEa and PEb in FIG. 8 ). Note that in region P3 in FIG. 8 , the formed notch is etched away down to the photoelectric conversion layer 15, exposing the electron transport layer 14 at the surface of region P3. However, in region P3, it is sufficient that at least the upper electrode 17 is removed, and it is more preferable that the hole transport layer 16 is also removed. However, the photoelectric conversion layer 15 does not necessarily have to be removed. In other words, a portion of the photoelectric conversion layer 15 may remain. In this case, the photoelectric conversion layer 15 is exposed at the surface of region P3. Alternatively, at least a portion of the hole transport layer 16 may be exposed without removing at least a portion of the hole transport layer 16. Alternatively, the electron transport layer 14 may also be removed to expose at least a portion of the lower electrode 13.

[0060] In the photoelectric conversion module 100, the region between region P3 and region P1 but not including region P2 is the formation region of the photoelectric conversion member PE. That is, in the formation region of the photoelectric conversion member PE, the upper electrode 17, the photoelectric conversion layer 15, and the lower electrode 13 of the same photoelectric conversion member PE overlap in a planar view. Note that the region between region P3 and region P1 and including region P2 is a connection region for electrically connecting two adjacent photoelectric conversion members PE.

[0061] In this way, the photoelectric conversion module 100 is configured such that the photoelectric conversion elements PE are separated by the regions P1 and P3, and two adjacent photoelectric conversion elements PE are electrically connected by the region P2. As a result, the photoelectric conversion module 100 includes a plurality of photoelectric conversion elements PE connected in series, as shown in the circuit diagram of FIG.

[0062] Fig. 10 is a schematic diagram of a photovoltaic conversion system 1000 according to the present disclosure. As shown in Fig. 10, the photovoltaic conversion system 1000 includes the above-described photovoltaic conversion module 100, a power conditioner 101, a distribution board 102, a power meter 103, a storage battery 104, and electrical equipment 105. The photovoltaic conversion system 1000 illustrated in Fig. 10 is provided with one each of the photovoltaic conversion module 100, the power conditioner 101, the distribution board 102, the power meter 103, the storage battery 104, and the electrical equipment 105, but a plurality of each may be provided.

[0063] The power conditioner (control circuit) 101 controls the current and voltage so that the power output from the photovoltaic conversion module 100 is optimized, and also performs the desired power distribution while monitoring the output power of the photovoltaic conversion module 100 and the charge amount of the storage battery 104, and outputs power to the storage battery 104 and the distribution board 102. At this time, DC power is output to the storage battery 104, and AC power is output to the distribution board 102. In other words, the power conditioner 101 has the function of converting DC power to AC power.

[0064] The distribution board 102 supplies the AC power received from the power conditioner 101 to the electrical equipment 105 and the power meter 103 in a desired distribution while monitoring the output power of the power conditioner 101 and the power consumption of the electrical equipment 105 .

[0065] The power meter 103 measures the power supplied from the distribution board 102 and supplies it to the commercial power system.

[0066] The electrical device 105 may be connected to the power conditioner 101 instead of being connected to the distribution board 102. In this case, the power conditioner 101 performs the desired power distribution while monitoring the output power of the photovoltaic conversion module 100, the charge level of the storage battery 104, and the power consumption of the electrical device 105, and supplies AC power to the distribution board 102, DC power to the storage battery 104, and AC power to the electrical device 105. If the electrical device 105 is for DC power, DC power may be supplied.

[0067] The embodiments disclosed herein are illustrative in all respects and are not intended to be limiting. Therefore, the technical scope of the present disclosure should not be interpreted solely by the above-described embodiments, but should be determined based on the claims.

[0068] This international application claims priority based on Japanese Patent Application No. 2024-029926, filed on February 29, 2024, the entire contents of which are incorporated herein by reference.

[0069] REFERENCE SIGNS LIST 10 Photoelectric conversion element 11 Upper substrate 12 Lower substrate (base) 13 Lower electrode 14 Electron transport layer 15 Photoelectric conversion layer 16 Hole transport layer 17 Upper electrode 18 Sealing layer 19 Inactive layer 100 Photoelectric conversion module 101 Power conditioner (control circuit) 1000 Photoelectric conversion system PE Photoelectric conversion section

Claims

1. A photoelectric conversion element comprising: a base; a photoelectric conversion unit provided on the base and including a photoelectric conversion layer containing a perovskite compound; a sealing layer provided on an area of ​​the base where the photoelectric conversion unit is not present; and an adhesion auxiliary layer formed between the base and the sealing layer.

2. A photoelectric conversion element according to claim 1, wherein the adhesion auxiliary layer is a layer having a higher electrical resistance in a direction parallel to the substrate surface than the photoelectric conversion layer.

3. A photoelectric conversion element according to claim 1 or 2, wherein the adhesion assisting layer is provided in the form of a plurality of discrete islands.

4. A photoelectric conversion element according to any one of claims 1 to 3, characterized in that the adhesion auxiliary layer is provided in contact with the sealing layer.

5. The photoelectric conversion element according to any one of claims 1 to 4, wherein the adhesion assisting layer is an inactive layer.

6. A photoelectric conversion element according to any one of claims 1 to 5, wherein the adhesion assisting layer has a non-perovskite structure.

7. The photoelectric conversion element according to any one of claims 1 to 6, wherein the adhesion assisting layer is amorphous.

8. A photoelectric conversion element according to any one of claims 1 to 7, wherein the adhesion aid layer contains at least one of an inorganic oxide and an inorganic nitride.

9. A photoelectric conversion element according to any one of claims 1 to 8, wherein the adhesion auxiliary layer contains at least one of silicon oxide and silicon nitride.

10. A photoelectric conversion element according to any one of claims 1 to 9, wherein the adhesion auxiliary layer contains at least one of lead iodide, lead bromide, tin iodide and tin bromide.

11. A photoelectric conversion element according to any one of claims 1 to 10, wherein the photoelectric conversion section has at least one of an electron transport layer and a hole transport layer.

12. A photoelectric conversion element according to claim 10, wherein the adhesion auxiliary layer is provided in contact with one of the electron transport layer and the hole transport layer that is closer to the substrate.

13. A photoelectric conversion element according to any one of claims 1 to 12, characterized in that it is configured as a photoelectric conversion module having a plurality of said photoelectric conversion parts connected in series.

14. A photoelectric conversion module which is one form of the photoelectric conversion element according to any one of claims 1 to 12, characterized in that it has a plurality of photoelectric conversion units connected in series.

15. A photoelectric conversion system comprising the photoelectric conversion module according to claim 14 and a control circuit.

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