Apparatus for producing superconducting wire and method for producing superconducting wire using same

Abstract

The present invention relates to an apparatus for producing superconducting wire and a method for producing same using the apparatus, the apparatus comprising: a supply unit for supplying wire having a buffer layer; a deposition unit for depositing a superconducting layer on the wire supplied from the supply unit; a deposition aid unit, provided in the deposition unit, for aiding the surface reaction of the wire; and a winding unit for winding the wire on which the superconducting layer has been deposited.

Description

Superconducting wire manufacturing device and superconducting wire manufacturing method using the same

[0001] The present invention relates to a superconducting wire manufacturing device and a superconducting wire manufacturing method using the same, and more specifically, to a superconducting wire manufacturing device capable of manufacturing high-quality superconducting wire by accelerating epitaxial growth by applying remote plasma to an organic metal chemical vapor deposition method, and a superconducting wire manufacturing method using the same.

[0002] A superconductor is a material that has zero electrical resistance below a critical temperature (Tc) and exhibits perfect diamagnetism, known as the Meissner effect.

[0003] The first generation of superconductivity was first discovered in 1911 when the electrical resistance of mercury became zero at a temperature of 4.2 K in liquid helium, and the second generation of superconductivity was discovered in 1986 when copper oxide superconductors were discovered.

[0004] Oxide superconductor (REBCO: RE is one or two rare earth elements (Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu)), or RE, Ba, Cu are individual oxide particles, or two or more of these elements are complex oxide particles.

[0005] In order to apply REBCO thin film superconductors to the power transmission field, a process that allows for long-term formation while maintaining a high critical current density (Jc) and has a low manufacturing cost must be applied. Therefore, various processes are being applied for the buffer layer and superconducting layer thin film.

[0006] The buffer layer is applied by sputtering and deposition, and the superconducting layer of the high-temperature superconductor wire can be manufactured by methods such as pulsed laser deposition (PLD), reactive co-evaporation (REC), metal organic chemical vapor deposition (MOCVD), and metal organic deposition (MOD).

[0007] Among them, metalorganic chemical vapor deposition (MOCVD) refers to a chemical vapor deposition method that uses a liquid-state organometallic compound raw material. Since this compound is incomplete and easily decomposed, it is vaporized and a gas phase reaction occurs and a chemical vapor deposition reaction occurs on the surface of a substrate (wire) to obtain a solid-state deposition layer.

[0008] It has the advantages of dense organization, excellent adhesion to the substrate, and fast deposition speed, but has the disadvantage of slow crystal growth.

[0009] The background technology for the present invention is disclosed in Korean Patent Publication No. 10-1429553 (registered on August 6, 2014, title of the invention: Superconducting wire and method for forming superconducting wire).

[0010] The purpose of the present invention is to provide a superconducting wire manufacturing device capable of manufacturing high-quality superconducting wire by accelerating epitaxial growth by applying remote plasma to an organic metal chemical vapor deposition method, and a superconducting wire manufacturing method using the same.

[0011] A superconducting wire manufacturing device according to the present invention may include: a supply unit for supplying a wire having a buffer layer formed thereon, a deposition unit for depositing a superconducting layer on the wire supplied from the supply unit, a deposition assistance unit provided in the deposition unit for assisting a surface reaction of the wire, and a winding unit for winding the wire having the superconducting layer deposited thereon in the deposition unit.

[0012] The above deposition unit may include a deposition chamber, a guide unit provided in the deposition chamber to guide the movement of the wire and heat the wire, and a spray unit to spray an organic metal raw material to deposit a superconducting layer on the wire guided by the guide unit.

[0013] The above guide part may include a guide drum formed with a length corresponding to the width of the wire and having a heating unit provided therein.

[0014] The above-mentioned injection unit may include a spray head spaced apart from the guide drum and partially surrounding the circumference of the guide drum, and having a plurality of micro-holes formed through which the organic metal raw material is sprayed.

[0015] The above guide part may include a conveyor that transports the wire and has a heating unit installed therein.

[0016] The above deposition assistance unit may include a plasma generation unit provided outside the deposition chamber and a plasma induction unit that diffuses plasma between the guide unit and the injection unit.

[0017] The above plasma induction part is formed to correspond to the shape of the guide part so that the plasma injection direction line and the surface of the wire can be formed at a uniform distance.

[0018] The position of the above plasma induction unit can be changed so that the distance between the plasma and the wire can be adjusted.

[0019] A differential exhaust section may be provided at the front and rear ends of the above deposition section to prevent remote plasma generated from the plasma induction section from being transferred to the wire.

[0020] It may include a heat treatment unit for heat treating the wire on which the superconducting layer supplied from the above deposition unit is deposited.

[0021] A method for manufacturing a superconducting wire according to the present invention includes: a wire supply step of supplying a wire having a buffer layer formed thereon to a substrate; a superconducting layer forming step of forming a superconducting layer on the supplied wire; and a winding step of winding the wire on which the superconducting layer is deposited. The superconducting layer forming step may include a heating step of heating the supplied wire and a deposition step of spraying an organic metal raw material onto the heated wire and simultaneously generating remote plasma.

[0022] After the above deposition step, a heat treatment step of heat treating the wire on which the superconducting layer is deposited can be further performed.

[0023] According to the superconducting wire manufacturing device and the superconducting wire manufacturing method using the same according to the present invention, a high-quality superconducting wire can be manufactured by accelerating epitaxial growth by applying remote plasma to the organic metal chemical vapor deposition method.

[0024] The present invention enables uniform spraying of an organic metal raw material by forming a spray head with a shape corresponding to a guide portion, and a plasma induction portion that diffuses plasma is formed with a shape corresponding to the shape of the guide portion, so that plasma is diffused over the entire surface of the wire at a uniform distance, thereby greatly improving uniform quality and production speed.

[0025] The present invention can secure process conditions such as production speed by controlling the gap between the wire and the plasma induction unit.

[0026] The present invention can improve deposition performance by maintaining the deposition area in a low vacuum state by providing a differential exhaust section in the deposition chamber, and can prevent plasma generated between the injection head and the wire from reaching the guide roll, thereby preventing damage to the quality of the wire. Furthermore, the guide roll guiding the wire is provided with a shield plate to prevent damage caused by plasma passing through the differential exhaust section.

[0027] The present invention is provided with a heat treatment unit for heat treating a wire on which a superconducting layer is deposited, so that the wire heated during deposition can be cooled rapidly during transport, thereby alleviating stress that may occur on the deposition surface.

[0028] FIG. 1 is a drawing for explaining a superconducting wire structure according to one embodiment of the present invention.

[0029] FIG. 2 is a drawing schematically showing the configuration of a superconducting wire manufacturing device according to one embodiment of the present invention.

[0030] Figure 3 is a perspective view schematically showing a deposition unit of a superconducting wire manufacturing device according to one embodiment of the present invention.

[0031] Figure 4 is a plan view schematically showing a deposition unit of a superconducting wire manufacturing device according to one embodiment of the present invention.

[0032] FIG. 5 is a drawing schematically showing a modified example of a deposition section of a superconducting wire manufacturing device according to one embodiment of the present invention.

[0033] Figure 6 is a plan view schematically showing a modified example of a deposition section of a superconducting wire manufacturing device according to one embodiment of the present invention.

[0034] Fig. 7 is a cross-sectional view showing a spraying section of a superconducting wire manufacturing device according to one embodiment of the present invention.

[0035] FIG. 8 is a drawing showing a modified example of a spraying unit of a superconducting wire manufacturing device according to one embodiment of the present invention.

[0036] Figure 9 is a plan view showing a modified example of a spraying unit of a superconducting wire manufacturing device according to one embodiment of the present invention.

[0037] Fig. 10 is a drawing showing a modified example of a pipe shape of a spray unit of a superconducting wire manufacturing device according to one embodiment of the present invention.

[0038] Figure 11 is a flowchart showing a method for manufacturing a superconducting wire according to one embodiment of the present invention.

[0039] Hereinafter, with reference to the attached drawings, an embodiment of a superconducting wire manufacturing device and a superconducting wire manufacturing method using the same according to the present invention will be described.

[0040] In this process, the thickness of lines and the sizes of components depicted in the drawings may be exaggerated for clarity and convenience. The terms described below are defined based on their functions in the present invention and may vary depending on the intent or custom of the user or operator. Therefore, the definitions of these terms should be based on the overall content of this specification.

[0041] In this specification, when it is said that a part is "connected (or connected)" to another part, this includes not only cases where it is "directly connected (or connected)" but also cases where it is "indirectly connected (or connected)" with another member in between. In this specification, when it is said that a part "includes (or comprises)" a certain component, this does not mean that other components are excluded, but rather that it may "include (or comprise)" other components, unless specifically stated otherwise.

[0042] Throughout this specification, the same reference numerals may refer to the same components. Even if the same or similar reference numerals are not mentioned or described in a specific drawing, they may be described based on other drawings. Even if a part is not indicated by a reference numeral in a specific drawing, that part may be described based on other drawings. The number, shape, size, and relative size differences of detailed components included in the drawings of this application are set for the convenience of understanding, and do not limit the embodiments and may be implemented in various forms.

[0043] FIG. 1 is a drawing for explaining a superconducting wire structure according to an embodiment of the present invention, FIG. 2 is a drawing schematically showing a configuration of a superconducting wire manufacturing apparatus according to an embodiment of the present invention, FIG. 3 is a perspective view schematically showing a deposition unit of a superconducting wire manufacturing apparatus according to an embodiment of the present invention, FIG. 4 is a plan view schematically showing a deposition unit of a superconducting wire manufacturing apparatus according to an embodiment of the present invention, FIG. 5 is a drawing schematically showing a modified example of the deposition unit of a superconducting wire manufacturing apparatus according to an embodiment of the present invention, FIG. 6 is a plan view schematically showing a modified example of the deposition unit of a superconducting wire manufacturing apparatus according to an embodiment of the present invention, FIG. 7 is a cross-sectional view showing an injection unit of a superconducting wire manufacturing apparatus according to an embodiment of the present invention, FIG. 8 is a drawing schematically showing a modified example of the injection unit of a superconducting wire manufacturing apparatus according to an embodiment of the present invention, FIG. 9 is a plan view schematically showing a modified example of the injection unit of a superconducting wire manufacturing apparatus according to an embodiment of the present invention, and FIG. 10 is a cross-sectional view showing a superconducting wire according to an embodiment of the present invention. This is a drawing showing a modified example of a pipe shape of a manufacturing device injection unit, and FIG. 11 is a flowchart showing a method for manufacturing a superconducting wire according to an embodiment of the present invention.

[0044] Referring to FIGS. 1 to 10, a superconducting wire manufacturing device (100) according to one embodiment of the present invention may include a supply unit (110), a deposition unit (120), a deposition assistance unit (160), and a winding unit (190).

[0045] First, referring to Fig. 1, a schematic diagram illustrating a superconducting wire structure is provided, which is composed of a substrate (10), a buffer layer (20), a superconducting layer (30), and a protective layer (40). The substrate (10) is mainly made of Hastelloy or stainless steel, and its thickness is formed to be approximately 50 μm.

[0046] The buffer layer (20) is composed of a diffusion barrier layer (22), a seed layer (24), an IBAD layer (26), a homoepitaxial layer (28), and a strain-matching layer (29), and is formed to have a total thickness of approximately 1.0 ㎛.

[0047] The diffusion barrier layer (22) is composed of a metal oxide such as aluminum oxide (Al₂O₃) and forms a film by sputtering. This is to prevent the components of the substrate (10) material from diffusing toward the seed layer (24).

[0048] The seed layer provides a crystal nucleation surface to the IBAD layer (26) and forms a film (Y2O3) by sputtering.

[0049] The IBAD layer (26) is a layer formed by using the IBAD (Ion Beam Assist Deposition) method to form a film (MgO), which is the most important process in the buffer layer (20), and as shown in FIG. 1, provides a two-axis (a, c-axis) orientation to the superconducting layer (30), and is a two-axis orientation having a crystalline orientation aligned along crystal axes on both the in-plane and out-of-plane sides of the thin film.

[0050] The homo-epi layer (28) plays a role in improving the biaxial orientation of the IBAD layer (26) and forms a film (MgO) by E-beam deposition, and the strain-matched layer (29) plays a role in reducing the lattice mismatch between the magnesium oxide constituting the IBAD layer (26) and the superconducting layer (30) and forms a film (LaMnO₃) by sputtering.

[0051] The superconducting wire manufacturing device (100) according to the present embodiment deposits a superconducting layer (30) on top of a buffer layer (20), so that the superconducting layer (30) has the same lattice structure as the crystal structure grown in the IBAD layer (26), and the growing crystal layer can be grown while maintaining the crystal structure and the same orientation of the substrate (10).

[0052] The superconducting wire manufacturing device (100) according to this embodiment has a supply unit (110), a deposition unit (120), and a winding unit (190) in a reel-to-reel format and are connected by vacuum.

[0053] The supply unit (110) supplies a wire (1) having a buffer layer (20) formed thereon, and may include a supply chamber (112) and an unwinding roller (114) provided within the supply chamber (112) through which the wire (1) having a buffer layer (20) formed thereon is unwound.

[0054] The wire (1) is wound around the unwinding roller (114), and the wire (1) can be sequentially drawn out by the rotation of the unwinding roller (114) and provided to the deposition unit (120).

[0055] The deposition unit (120) deposits a superconducting layer (30) on the wire (1) supplied from the supply unit (110), and may include a deposition chamber (130), a guide unit (140), and an injection unit (150).

[0056] The deposition chamber (130) is connected to the supply chamber (112) by a connecting pipe.

[0057] A guide unit (140) is provided in the deposition chamber (130) to guide the movement of the wire (1) and heat the wire (1). The guide unit (140) may be formed with a length corresponding to the width of the wire (1) and may be formed of a guide drum (142) having a heating unit (144) provided therein.

[0058] Guide rolls (135) may be provided on the front and rear sides of the guide drum (142) to guide the wire (1) to the guide drum (142).

[0059] A heating unit (144) is provided inside the guide drum (142), and by heating the guide drum (142), the wire (1) can be heated to a temperature suitable for depositing a superconducting layer (30), and while the heated wire (1) moves along the outer periphery of the guide drum (142), the superconducting layer (30) can be deposited by the injection unit (150) and deposition assistance unit (160) described later.

[0060] The injection unit (150) is for injecting an organic metal raw material to deposit a superconducting layer (30) on a wire (1) guided by a guide unit (140), and includes a spray head (152) that is spaced apart from a guide drum (142) and partially surrounds the circumference of the guide drum (142), and has a plurality of micro-holes (152a) formed through which the organic metal raw material is injected.

[0061] The injection head (152) is connected to the organic metal raw material supply unit (154) provided on the outside of the deposition chamber (130).

[0062] The organic metal raw material supply unit (154) is equipped with a vaporization device (155), and the organic metal raw material is gasified and injected toward the heated wire (1) through the micro-holes (152a) of the injection head (152).

[0063] A chemical reaction occurs in the space between the outer part of the injection head (152) and the wire (1) wound around the outer periphery of the guide drum (142), and organic substances are decomposed by heat and discharged to the outside of the deposition chamber (130) through the vacuum pump (132) of the deposition chamber (130), and the remaining metal is attached to the heated wire (1) to form a deposit.

[0064] In more detail, when the gasified organometallic raw material is injected through the injection head (152), the gas reacts to form a film of Y (Yttrium), B (Barium), and C (Copper) components on the surface of the wire (1).

[0065] As illustrated in FIGS. 2 to 4, the injection head (152) according to the present embodiment may be formed with a curvature corresponding to the outer circumference of the guide drum (142) and formed in a shape that wraps around the circumference of the guide drum (142).

[0066] The injection head (152) according to this embodiment is illustrated as a U-shape that surrounds the perimeter of the guide drum (142), but is not limited thereto and may be formed in various shapes such as a flat shape or a circular shape.

[0067] Referring to FIGS. 5 and 6, as a modified example of the deposition unit (120), the guide unit (240) may include a conveyor (242) that transports the wire (1) and has a heating unit (244) provided therein.

[0068] For example, in the case of the above-mentioned guide drum (142), a wire (1) with a large width, for example, a wire (1) with a width of 13 cm, can be applied, and in the case of the conveyor (242), a wire (1) with a small width, for example, a wire (1) with a width of 4 cm, can be applied.

[0069] A heating unit (244) is provided at the bottom of the conveyor (242), and by heating the conveyor (242), the superconducting layer (30) can be heated to a temperature suitable for depositing on the wire (1), and an injection unit (150) and a deposition assistance unit (160) are provided at the top of the conveyor (242), thereby allowing the superconducting layer (30) to be deposited.

[0070] At this time, the injection head (152) may be formed in a flat shape and placed on the upper part of the conveyor (242) so as to correspond to the conveyor (242).

[0071] Referring to FIG. 7, the injection head (152) can be supplied in a partitioned manner so as to prevent the gas supplied from the organic metal raw material supply unit (154) from reacting with each component within the injection head (152).

[0072] Referring to FIGS. 8 and 9, as a modified example of the injection head (252), the injection head (252) may include a base plate (253), a plurality of supply pipes (244) provided on the upper portion of the base plate (253) for supplying an organic metal raw material, and a plurality of cooling pipes (245) provided between the supply pipes (244).

[0073] These supply pipes (244) and cooling pipes (245) may be formed by being arranged in a square shape as shown in (a) of FIG. 9, or may be formed by being arranged in a circular shape as shown in (b) of FIG. 9.

[0074] The shapes of the supply pipe (244) and the cooling pipe (245) are not limited to square and circular, and can be formed into various shapes that can smoothly supply the organic metal raw material to the wire (1).

[0075] As illustrated in Fig. 10, the cross-sectional shape of the supply pipe (244) and the cooling pipe (245) can be formed into various shapes, such as a square shape as in Fig. 10 (a) or a circle shape as in Fig. 10 (b).

[0076] The deposition assistance unit (160) is provided in the deposition unit (120) to assist the surface reaction of the wire (1), and may include a plasma generation unit (162) provided on the outside of the deposition chamber (130) and a plasma induction unit (164) that diffuses plasma between the guide unit (140) and the injection unit (150).

[0077] The plasma generating unit (162) supplies monoatomic oxygen (O), ionizes high-purity (99.9999%) diatomic oxygen (O2) into monoatomic oxygen (O) and supplies it to the plasma induction unit (164).

[0078] The plasma induction unit (164) is formed to correspond to the shape of the guide unit (140, 240), so that the plasma injection direction line and the surface of the wire (1) can be formed at a uniform distance.

[0079] In more detail, the plasma induction unit (164) is provided between the guide drum (142) and the injection head (152), is formed in a U shape along the curvature of the guide drum (142), and is arranged opposite to the direction of travel of the wire (1) so as to be able to inject monoatomic oxygen (O) supplied from the plasma generation unit (162) in both directions or in one direction.

[0080] Of course, in the case of a modified example, the plasma induction unit (164) is formed in a flat shape according to the shape of the conveyor (242).

[0081] In this way, the oxygen plasma generated through the plasma generating unit (162) outside the deposition chamber (130) is induced close to the wire (1) between the injection head (152) inside the deposition chamber (130) and the wire (1) through the plasma induction unit (164).

[0082] Therefore, finally, YBa2Cu3O on the surface of the wire (1) 7-x(REBCO) film is formed. The process of growing such a film is called epitaxial growth, and the crystal of the grown wire (1) must have the same lattice structure as the crystal structure grown in the IBAD layer (26), and the growing crystal layer can grow while maintaining the crystal structure and the same orientation (a, c axis) of the wire (1).

[0083] By achieving high-quality thin film epitaxial growth and doping with non-superconducting particles, control such as increasing the critical current size under a magnetic field is possible only by controlling the gas flow rate and the temperature of the wire (1).

[0084] The position of the plasma induction unit (164) can be changed so that the distance between the remote plasma and the wire (1) can be adjusted.

[0085] This can be achieved by the plasma induction unit (164) using a separate length adjustment means (not shown). That is, by varying the position of the plasma induction unit (164) by means of gear operation driven by a motor or a cylinder, the distance between the plasma spread from the plasma induction unit (164) and the wire (1) can be adjusted, thereby varying this according to the production speed of the superconducting wire (1).

[0086] A differential exhaust section (170) may be provided at the front and rear ends of the deposition section (120) to prevent plasma generated from the plasma induction section (164) from being transferred to the wire (1).

[0087] The differential exhaust section (170) can improve deposition performance by maintaining a relatively low vacuum state in the area where deposition actually takes place, and can play a role in preventing plasma generated between the injection head (152) and the wire (1) from reaching the guide roll (135).

[0088] That is, when plasma reaches the guide roll (135), it causes damage to the surface of the guide roll (135), which is then transferred to the wire (1) and has a fatal effect on the quality of the wire (1). Therefore, to prevent plasma from being generated around the guide roll (135), partial gases inside are removed in the differential exhaust section (170).

[0089] It is preferable that the differential exhaust section (170) be formed with a large inlet to improve removal efficiency.

[0090] Furthermore, a shield plate (136) that protects the guide roll (135) may be placed on the guide roll (135) to prevent damage caused by plasma passing through the differential exhaust section (170).

[0091] The winding unit (190) may include a winding chamber (194) and a winding roller for winding a wire (1) on which a superconducting layer (30) is formed.

[0092] A heat treatment unit (180) may be provided between the deposition unit (120) and the winding unit (190). The heat treatment unit (180) may include a heat treatment chamber (182) connected to the deposition chamber (130) and the winding chamber (194) by a connecting pipe, respectively, and a heating unit (184) for heating the wire (1) on which the superconducting layer (30) is formed and transported.

[0093] The wire (1) heated to a high temperature by the heating unit (184) of the guide section (140) is quickly cooled during transport after deposition, but stress may be generated on the deposition surface due to this cooling. The heat treatment section (180) alleviates this cooling, thereby providing a high-quality superconducting wire (1) that alleviates stress that may be generated on the deposition surface.

[0094] Hereinafter, a method for manufacturing a superconducting wire according to one embodiment of the present invention will be described.

[0095] Referring to FIG. 11, a method for manufacturing a superconducting wire according to one embodiment of the present invention may include a wire supply step (S100), a superconducting layer forming step (S200), and a winding step (S400).

[0096] First, all processes for manufacturing superconducting wires are performed in a reel-to-reel format, each within a vacuum-connected chamber. This prevents corrosion of the superconducting wires (1), which are sensitive to moisture.

[0097] The wire supply step (S100) supplies a wire (1) on which a buffer layer (20) is formed to a substrate (10). The wire (1) is wound around a winding roller (114) and is sequentially pulled out and supplied to a deposition unit (120).

[0098] The superconducting layer formation step (S200) forms a superconducting layer (30) on the supplied wire (1), and may include a heating step (S210) and a deposition step (S220).

[0099] Before the process of forming the superconducting layer (S200), the deposition chamber (130) is evacuated to maintain the process pressure and is maintained in a vacuum state, and the differential exhaust unit (170) provided in the deposition chamber (130) is operated to maintain the space where the deposition is performed in a low vacuum state.

[0100] The injection unit (150) and the deposition auxiliary unit (160) are operated to supply the organic metal raw material and spread the plasma.

[0101] Thereafter, the superconducting layer forming step (S200) process is performed by the operation of the guide unit (140). The heating step (S210) is to heat the wire (1), and as shown in FIGS. 2 and 5, the heating unit (144, 244) provided inside the guide drum (142) or inside the conveyor (242) is operated to heat the wire (1) transported along the guide drum (142) or the conveyor (242) to a temperature suitable for deposition.

[0102] In the deposition step, the organic metal raw material is sprayed through a number of micro-holes (152a) from the spray head (152) onto the wire (1) heated by the heating unit (144, 244), and at the same time, plasma is diffused by the deposition assisting unit (160) to assist the surface reaction of the wire (1).

[0103] To explain this in detail, monoatomic oxygen (O) provided from the plasma generating unit (162) is injected in both directions or in one direction through the plasma induction unit (164) and is guided closer to the wire (1) between the injection head (152) and the wire (1).

[0104] That is, by spraying the vaporized gas of the organic metal raw material, a film of Y (Yttrium), B (Barium), and C (Copper) components is formed on the surface of the wire (1), and ionized oxygen ions diffused from the plasma induction unit (164) are combined here to ultimately form YBa2Cu3O on the surface of the wire (1). 7-x (REBCO) can form a membrane.

[0105] The crystal of the grown wire (1) can have the same lattice structure as the crystal structure grown in the IBAD layer (26), and the growing crystal layer can grow while maintaining the crystal structure and the same orientation (a, c axis) of the wire (1).

[0106] The most important condition for using second-generation high-temperature superconducting (HTS) wires in superconducting applications (e.g., electromagnets) is a high critical current (IC) value under high magnetic fields.

[0107] In particular, the critical current density (Jc) must be as large as possible even under a large magnetic field applied in any direction. The limit of the critical current density is determined by the action of an artificial pin (flux pinning center) that fixes the magnetic flux lines distributed within the superconductor from moving against the Lorentz force when the magnetic flux lines try to move due to the Lorentz force that penetrates from the outside.

[0108] These magnetic flux pinning points, including impurities, can be naturally created during the superconducting wire manufacturing process according to one embodiment of the present invention.

[0109] After the deposition step (S200), a heat treatment step (S300) is performed to heat treat the wire (1) on which the superconducting layer (30) is deposited. The heat treatment step (S300) heats the wire (1) on which the superconducting layer (30) is formed and is being transported by a heating unit (184), thereby preventing the wire (1) deposited at a high temperature from cooling rapidly during transport, thereby alleviating cooling and thereby alleviating stress that may occur on the deposition surface.

[0110] After the heat treatment step (S300), the winding step (S400) is performed. In the winding step (S400), the wire (1) on which the superconducting layer (30) is formed is wound around a winding roller (194) so ​​that it can be transferred to the next process.

[0111] According to the present invention described above, a high-quality superconducting wire can be manufactured by accelerating epitaxial growth by applying remote plasma to an organic metal chemical vapor deposition method.

[0112] The present invention enables uniform spraying of an organic metal raw material by forming a spray head with a shape corresponding to a guide portion, and a plasma induction portion that diffuses plasma is formed with a shape corresponding to the shape of the guide portion, so that plasma is diffused over the entire surface of the wire at a uniform distance, thereby greatly improving uniform quality and production speed.

[0113] Although the present invention has been described with reference to the embodiments shown in the drawings, these are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom.

[0114] Therefore, the technical protection scope of the present invention should be defined by the following patent claims.

Claims

1. A supply section that supplies a wire with a buffer layer formed thereon; A deposition unit that deposits a superconducting layer on the wire supplied from the supply unit; A deposition assistance unit provided in the above deposition unit to assist the surface reaction of the wire; and A superconducting wire manufacturing device characterized by including a winding unit for winding the wire on which the superconducting layer is deposited in the deposition unit.

2. In paragraph 1, The above deposition unit is a deposition chamber; A guide part provided in the deposition chamber to guide the movement of the wire and heat the wire; and A superconducting wire manufacturing device characterized by including a spraying unit that sprays an organic metal raw material to deposit a superconducting layer on the wire guided by the guide unit.

3. In paragraph 2, A superconducting wire manufacturing device characterized in that the guide part includes a guide drum formed with a length corresponding to the width of the wire and having a heating unit provided therein.

4. In paragraph 3, A superconducting wire manufacturing device characterized in that the injection unit includes a spray head that is spaced apart from the guide drum and partially surrounds the circumference of the guide drum, and in which a plurality of micro-holes are formed through which the organic metal raw material is injected.

5. In paragraph 2, A superconducting wire manufacturing device characterized in that the guide section includes a conveyor that transports the wire and has a heating unit installed inside.

6. In paragraph 2, The above deposition assistance unit is a plasma generating unit provided outside the deposition chamber; and A superconducting wire manufacturing device characterized by including a plasma induction unit that diffuses plasma between the guide unit and the injection unit.

7. In paragraph 6, A superconducting wire manufacturing device characterized in that the plasma induction part is formed to correspond to the shape of the guide part so that the remote plasma injection direction line and the surface of the wire are formed at a uniform distance.

8. In paragraph 6, A superconducting wire manufacturing device characterized in that the position of the plasma induction unit is variable so that the distance between the plasma and the wire can be adjusted.

9. In paragraph 6, A superconducting wire manufacturing device characterized in that a differential exhaust section is provided at the front and rear ends of the deposition section to prevent plasma generated in the plasma induction section from being transferred to the wire.

10. In paragraph 1, A superconducting wire manufacturing device characterized by including a heat treatment unit that heat-treats the wire on which the superconducting layer supplied from the deposition unit is deposited.

11. Wire supply step for supplying wire with a buffer layer formed on the substrate; A superconducting layer forming step of forming a superconducting layer on the supplied wire; It includes a winding step of winding the wire on which the superconducting layer is deposited; The above superconducting layer forming step is a heating step of heating the supplied wire; and A method for manufacturing a superconducting wire, characterized in that it includes a deposition step of spraying an organic metal raw material onto the heated wire and simultaneously generating plasma.

12. In paragraph 11, A method for manufacturing a superconducting wire, characterized in that, after the above deposition step, a heat treatment step is further performed to heat treat the wire on which the superconducting layer is deposited.

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