Optoelectronic component and method of manufacturing an optoelectronic component

Abstract

The invention relates to an Optoelectronic component, especially a photonic integrated circuit PIC, comprising a photonic integrated circuit PIC chip and an optical waveguide structure with at least one optical waveguide placed on the PIC chip, wherein the PIC chip comprises a coupling face to allow for an edge coupling of the optoelectronic component to an edge emitting laser EEL unit by means of edge coupling, wherein an input port of the at least one optical waveguide for inputting laser signals of the EEL unit into the photonic integrated circuit is formed into the coupling face, and wherein at least one recess area is formed into the coupling face neighboring to the input port of the at least one optical waveguide. The invention further relates to an optoelectronic system, a method for manufacturing an optoelectronic component and a method for manufacturing an optoelectronic system.

Description

[0001] OPTOELECTRONIC COMPONENT AND METHOD OF MANUFACTURING AN OPTOELECTRONIC COMPONENT

[0002] Description

[0003] The current invention relates to an optoelectronic component and a method of manufacturing an optoelectronic component . The current invention further relates to an optoelectronic system with an optoelectronic component and a method of manufacturing an optoelectronic system .

[0004] This patent application claims the priority of German patent application 10 2024 106 764 . 0 , the disclosure content of which is hereby incorporated by reference .

[0005] Optoelectronic components including waveguides for transmission of photonic signals are known from state of the art .

[0006] An obj ective of the current application is to provide an improved optoelectronic component and an improved method of manufacturing an optoelectronic component . A further obj ective is to provide an improved optoelectronic system with an optoelectronic component and a method of manufacturing an optoelectronic system .

[0007] Said obj ectives are achieved by the optoelectronic component , the optoelectronic system and the methods of the independent claims . Further embodiments are subj ect of the dependent claims .

[0008] According to an aspect of the invention an optoelectronic component , especially a photonic integrated circuit PIC, comprising a photonic integrated circuit PIC chip and an optical waveguide structure with at least one optical waveguide placed on the PIC chip is provided, wherein the PIC chip comprises a coupling face to allow for an edge coupling of the optoelectronic component to an edge emitting laser EEL unit by means of edge coupling, wherein an input port of the at least one optical waveguide for inputting laser signals of the EEL unit into the photonic integrated circuit i s formed into the coupling face , and wherein at least one recess area is formed into the coupling face neighboring to the input port of the at least one optical waveguide .

[0009] Hereby the technical advantage can be achieved, that an improved optoelectronic component , in particular an improved photonic integrated circuit PIC, can be provided . The PIC comprises a PIC chip with an optic waveguide structure with at least one optical waveguide . The PIC chip compri ses a coupling face for edge coupling the PIC to an edge emitting laser EEL unit . The coupling face comprises at least one recess area positioned in proximity to an input port of the at least one optical waveguide formed in the coupling face . As a result of the at least one recess area the coupling face of the PIC chip is not formed in a completely planar shape . The technical advantage of the recess area is that due to the recess area misalignments between the coupling face o f the PIC chip and a laser coupling face of an EEL unit can be mitigated or avoided .

[0010] With a completely planar coupling face , as known from state of the art , misalignments between the coupling face of the PIC chip and the laser coupling face of the EEL unit can occur . The misalignments can occur due to tilting of the EEL unit with respect to the coupling face of the PIC chip as well as due to protruding elements protruding from the laser coupling face which can occur due to irregularities during the manufacturing process of the EEL unit . The Misalignments can lead to the formation of air gaps between the input port of the optical waveguide of the PIC chip and an emitting area for emitting laser signals of the EEL unit placed in the laser coupling face .

[0011] With the at least one recess area formed in the coupling face of the PIC chip the protruding elements protruding from the laser coupling face can either be accommodated by the recess area or the laser coupling face can partially be accommodated by the recess area due to the tilting of the EEL unit with respect to the coupling face . By accommodating the protruding elements or parts of the laser coupling face by the at least one recess area the misalignment ef fects can be mitigated and the air gap between the input port of the optical waveguide of the PIC chip and the emitting area of the EEL unit can also be mitigated . As a result , the ef ficiency of the edge coupling between the EEL unit and the PIC chip can be enhanced and the process of edge coupling between the EEL unit and the PIC chip can be simpli fied .

[0012] The coupling face of the PIC chip is a face of the PIC chip that allows an edge coupling to a respective laser coupling face of an EEL unit . The input port of the waveguide is an input structure that allows the input of light emitted by the EEL unit into the waveguide .

[0013] According to an embodiment multiple recess areas are formed in the coupling face each neighboring the input port of the at least one optical waveguide , and wherein a contact dome with a planar contact facet is formed by the multiple recess areas with the input port of the at least one optical waveguide being formed in the planar contact facet .

[0014] Hereby the technical advantage can be achieved, that due to multiple recess areas misalignment ef fects due to tilting of the EEL unit with respect to the PIC chip or due to protruding elements of the laser coupling face of the EEL unit can be mitigated in multiple di f ferent directions .

[0015] The contact dome is a dome like structure of the PIC chip located between the two recess areas . The contact facet is a facet of the contact dome mostly parallel to the coupling face of the PIC chip . The contact facet can contact the laser coupling face of the EEL unit during edge coupling . According to an embodiment the at least one recess area has a rectangular shape or a triangular shape or a trapezoidal shape or a curved shape or an irregular shape .

[0016] Hereby the technical advantage can be achieved, that depending on the shape of the PIC chip as well as the shape of the EEL unit the recess areas can be formed accordingly . With the dif ferent shapes of the recess areas an optimi zed mitigation of the misalignment ef fects can be achieved .

[0017] According to an embodiment the contact dome has a rectangular shape or a trapezoidal shape or a curved or irregular shape with curved or irregular shaped side walls and the planar contact facet .

[0018] Hereby the technical advantage can be achieved, that due the dif ferent shapes of the contact dome an optimi zation of the mitigation of the misalignment ef fects can be achieved .

[0019] According to an embodiment the contact dome has rounded corners between the planar contact facet and the side walls of the contact dome .

[0020] Hereby the technical advantage can be achieved, that through the rounded corners between the planar contact facet and the sidewalls of the contact dome damaging ef fects of the contact dome due to contact with the laser contact face of the EEL unit can be avoided .

[0021] According to an embodiment multiple contact protrus ions are formed on the planar contact facet .

[0022] Hereby the technical advantage can be achieved, that due to the contact protrusions protruding from the planar contact facet of the contact dome a damage of the contact facet due to contacts by the laser coupling face can be avoided or mitigated . According to an embodiment the contact protrusions form a ring like structure surrounding the input port of the at least one optical waveguide .

[0023] Hereby the technical advantage can be achieved, that a stable and robust structure of the contact protrusions can be provided .

[0024] According to an embodiment the contact protrusions have a rectangular shape or a trapezoidal shape or a curved shape .

[0025] Hereby the technical advantage can be achieved, that depending on the use case as well as the shapes of the PIC chip and the EEL unit robust contact protrusions with di f ferent shapes can be provided .

[0026] According to an embodiment multiple input ports of multiple optical waveguides are formed in the planar contact facet .

[0027] Hereby the technical advantage can be achieved, that the current invention is suitable for multi-channel optical waveguide structures .

[0028] According to an embodiment the multiple input ports are separated by at least one contact protrusion .

[0029] Hereby the technical advantage can be achieved, that due to the separating contact protrusion a further stabili zation of the structure can be achieved . By the arrangement o f multiple input ports of multiple optical waveguides on the contact facet of the contact dome the dimensions of the contact facet and the contact dome must be enlarged . Therefore , further contact protrusions are beneficial to secure the stability of the structure and avoid contacts between the contact facet and the laser contact face of the EEL unit .

[0030] According to an embodiment the planar contact facet or the contact protrusions of the contact dome are positioned at a contact level equal or higher or lower than a contact level of the coupling face .

[0031] Hereby the technical advantage can be achieved, that by arranging the contact facet or the contact protrusions in a contact level lower than the contact level of the coupling face the entire laser coupling face of the EEL unit can be accommodated by the multiple recess areas . This can lead to a more stable edge coupling . By positioning the contact facet or the contact protrusions at a contact level higher than the contact level of the contact face can be secured, that the laser contact face of the EEL unit first contacts the contact facet or contact protrusions before contacting the coupling face . This can simpli fy the alignment process . By positioning the contact facet or contact protrusions at a contact level equal to the contact level of the coupling face the manufacturing process of the optoelectronic component can be simplified .

[0032] According to an embodiment the multiple recess areas are distanced to each other along a hori zontal axis and or along a vertical axis of the PIC chip .

[0033] Hereby the technical advantage can be achieved, that misalignment ef fects of the alignment between the laser coupling face of the EEL unit and the coupling face of the PIC chip can be mitigated along transversal / hori zontal and / or vertical directions with respect to the PIC chip .

[0034] According to an aspect an optoelectronic system comprising the optoelectronic component of any of the previous embodiments and an Edge Emitting Laser EEL unit with a laser coupling face is provided, wherein the EEL unit is coupled with the laser coupling face to the coupling face of the optoelectronic component by means of edge coupling .

[0035] Hereby the technical advantage can be achieved, that an improved optoelectronic system comprising the optoelectronic components with the above-mentioned technical advantages and an edge emitting laser EEL unit can be provided .

[0036] According to an aspect a method of manufacturing an optoelectronic component , especially a photonic integrated circuit , of any of the previous embodiments is provided, comprising : Providing a PIC chip with a waveguide structure with at least one optical waveguide and a contact facet , wherein an input port of the at least one optical waveguide is formed into the coupling face ;

[0037] Forming at least one recess area into the coupling face by means of an etching process , wherein the at least one recess area is positioned in proximity to the input port o f the at least one optical waveguide .

[0038] Hereby the technical advantage can be achieved, that an improved method of manufacturing an optoelectronic component with the above-mentioned technical advantages can be provided .

[0039] According to an aspect a method of manufacturing an optoelectronic system according to invention is provided, comprising : Providing an optoelectronic component of any of the previous embodiment ;

[0040] Providing an Edge Emitting Laser EEL unit with a laser coupling face , wherein the laser coupling face comprises an emitting area for emitting laser signals generated by the EEL unit ;

[0041] Coupling the EEL unit to the optoelectronic component by means of edge coupling, comprising :

[0042] Bringing the laser coupling face of the EEL unit and the coupling face of the optoelectronic component into contact ; and Aligning the laser coupling face and the coupling face of the optoelectronic component such that the emitting area of the laser coupling face is aligned to the input port of the optical waveguide of the optoelectronic component , wherein during the alignment parts of the laser coupling face of the EEL unit are accommodated by the at least one recess area of the coupling face of the optoelectronic component .

[0043] Hereby the technical advantage can be achieved, that an improved method of manufacturing an optoelectronic system with an optoelectronic component with the above-mentioned technical advantages can be provided . Due to the recess areas formed in the coupling face of the PIC chip of the optoelectronic component misalignment ef fects due to tilting of the laser coupling face with respect to the coupling face of the PIC chip or due to protruding elements protruding from the laser coupling face of the EEL unit can be mitigated . As a result , a more ef ficient edge coupling between the EEL unit and the optoelectronic component can be achieved .

[0044] The above-described properties , features and advantages of this invention, as well as the manner in which they are achieved, become clearer and more clearly understandable in connection with the following description of the embodiments , which are explained in more detail in connection with the drawings . The figures show :

[0045] Figure 1 a schematic view of an optoelectronic system according to the state of the art ;

[0046] Figure 2 multiple schematic views of an optoelectronic system according to an embodiment ;

[0047] Figure 3 multiple schematic views of a coupling face of an optoelectronic component according to multiple embodiments ;

[0048] Figure 4 further multiple schematic views of the optoelectronic component according to multiple further embodiments ; Figure 5 further multiple schematic views of the optoelectronic component and the optoelectronic system according to multiple further embodiments ; and

[0049] Figure 6 a schematic illustration of a method for manufacturing an optoelectronic component according to an embodiment .

[0050] Figure 1 shows a schematic view of an optoelectronic system 300 according to the state of the art .

[0051] The optoelectronic system 300 comprises an optoelectronic component 301 , in particular a photonic integrated circuit , comprising a photonic integrated circuit PIC chip 303 with at least one optical waveguide 305 . The optoelectronic system 300 further comprises an edge emitting laser EEL unit 307 . The PIC chip 303 comprises a coupling face 309 and the EEL unit 307 comprises a laser coupling face 311 . In the coupling face 309 of the PIC chip 303 an input port of the at least one optical waveguide 305 is formed in order to input laser signals emitted by the EEL unit 307 . The laser coupling face 311 of the EEL unit 307 comprises a respective emitting area in order to emit the laser signals generated by the EEL unit 307 . re

[0052] In the shown embodiment known from the state of the art the EEL unit 307 and the PIC chip 303 are coupled by means of edge coupling . According to the state of the art at least the coupling face 309 of the PIC chip 303 is formed as a completely planar face . The laser coupling face 311 of the EEL unit 307 can be formed as planar face but can also comprise protruding elements .

[0053] In graphic a ) a precise alignment between the two planar shaped coupling faces 309 , 311 is shown .

[0054] However, i f misalignments occur between the two coupling faces 309 , 311 the ef ficiency of the edge coupling can be re- duced signi ficantly . Graphics b ) and c ) show two most common cases that lead to such misalignments .

[0055] In graphic b ) the misalignment occurs due to a tilting of the EEL unit 307 with respect to the PIC chip 303 , and in particular of the laser coupling face 311 with respect to the coupling face 309 . Due to the tilting the edge coupling leads to a single mechanical contact point 319 between the coupling face 309 and the laser coupling face 311 and the formation of an air gap 321 between the input port 313 and the emitting area 315 . This air gap 321 leads to a substantial reduction of light conduction of the laser signals into the optical waveguide 305 due to the di f fraction of the laser beam in the gap between both units .

[0056] In graphic c ) the misalignment is caused due to protruding elements 317 protruding from the laser coupling face 311 . Due to the protruding elements 317 again mechanical contact points 319 between the protruding elements 317 and the coupling face 309 are generated and the air gap 321 between the input port 313 and the emitting area 315 is formed .

[0057] Figure 2 shows multiple schematic views of an optoelectronic system 200 according to an embodiment .

[0058] In figure 2 the optoelectronic component 100 is only shown in a very reduced fashion . In fact only the coupling face 107 including the input port 109 and the recess areas 111 as well as one optical waveguide 105 of the PIC chip 101 are illustrated in a very simpli fied form . This however, should not reduce the scope of the current invention . The optoelectronic component 100 , and in particular the PIC chip 101 and the optical waveguide structure 103 , of the current invention should comprise all features of photonic integrated circuits that are known from state of the art .

[0059] According to the current invention the optoelectronic system 200 comprises an edge emitting laser EEL unit 201 with a la- ser coupling face 203 and an emitting area 205 formed in the laser coupling face 203 . The optoelectronic system 200 further comprises an optoelectronic component 100 , in particular a photonic integrated circuit , comprising a photonic integrated circuit PIC chip 101 with an optical waveguide structure 103 comprising at least one optical waveguide 105. The PIC chip 101 further comprises a coupling face 107 for performing edge coupling between the coupling face 107 of the PIC chip 101 and the laser coupling face 203 of the EEL unit 201 . The coupling face 107 comprises an input port 109 of the at least one optical waveguide 105 and a recess area 111 . According to the invention the recess area 111 is pos itioned in proximity to the input port 109 .

[0060] In the shown embodiment the coupling face 107 of the PIC chip 101 comprises two recess areas 111 . Each recess area 111 is positioned in direct proximity to the input port 109 . In the shown embodiment the two recess areas 111 are positioned on opposing sides of the input port 109 with respect to a horizontal direction, ie . a transversal axis x of the PIC chip 101 .

[0061] The recess areas 111 comprise a width W along the transversal axis x, a depth D along the longitudinal axis y and a Height H along the vertical axis z . The height H is not il lustrated in Figure 2 due to the two-dimensional character of the figure . The height H is illustrated in Figure 5 .

[0062] In the shown embodiment the two recess areas 111 positioned on opposing sides of the input port 109 form a contact dome 113 with a planar contact facet . The input port 109 is formed in the planar contact facet 115 . In the shown embodiment the contact dome 113 comprises a trapezoidal shape with the planar contact facet 115 and two slanted sidewalls 117 .

[0063] In graphics a ) and b ) the two cases for misalignment between the coupling face 107 of the PIC chip 101 and the laser coupling face 203 of the EEL unit 201 , similar to the one dis- cussed with respect to graphics b ) and c ) in Fig . 1 , are illustrated .

[0064] Graphic a ) shows the misalignment due to the tilting of the EEL unit 201 with respect to the PIC chip 101 .

[0065] As shown in graphic a ) due to the at least one recess area 111 , even though the EEL unit 201 is substantially tilted with regard to the coupling face 107 of the PIC chip 101 no mechanical contact point between the coupling face 107 and the laser coupling face 203 , as shown in graphic a ) of Fig . 1 , occurs . Instead, the tilted part of the laser coupling face 203 is accommodated by one of the multiple recess areas 111 formed in the coupling face 107 of the PIC chip 101 . As a result of the accommodation of parts of the laser coupling face 203 by the recess area 111 the air gap 127 between the input port 109 of the at least one optical waveguide 105 and the emitting area 205 of the EEL unit 201 can be mitigated or completely avoided . As a result , even though a severe tilting between the EEL unit 201 and the PIC chip 101 occurs , a perfect or almost perfect alignment between the input port 109 of the optical waveguide 105 and the emitting area 205 of the EEL unit 201 can be achieved .

[0066] In graphic b ) the equivalent to the misalignment case discussed with regard to graphic b ) in Fig . 1 is shown . The laser coupling face 203 of the EEL unit 201 comprises a protruding element 207 protruding from the laser coupl ing face 203 . However, due to the at least one recess area 111 formed in the coupling face 107 no mechanical contact point between the protruding element 207 of the laser coupling face 203 and the coupling face 107 of the PIC chip 101 occurs , as the protruding element 207 is accommodated by one of the shown recess areas 111 . As a result , the formation of the air gap 127 between the input port 109 of the optical waveguide 105 and the emitting area 205 of the EEL unit 201 can be reduced to a minimum or can be avoided completely . As a result , a perfect alignment between the input port 109 of the optical waveguide 105 and the emitting area 205 of the EEL unit 201 can be achieved .

[0067] In the shown embodiments a width wl of the recess area 111 is larger than hal f of a width w2 of the laser coupling face 203 . As a result , a width w3 of the two neighboring recess areas 111 is larger than the width w2 of the laser coupling face 203 . As a result , in the case of tilting of the EEL unit 201 with respect to the PIC chip 101 in accommodation of parts of the laser coupling face 203 by one of the recess areas 111 can be secured .

[0068] According to an embodiment the width W of the reces s area 111 can be in the range of 40 to 1000 pm, the depth D o f the recess area 111 can be in the range of 1 to 50 pm and the height H of the recess areas 111 can be in the range of 5 to 800 pm .

[0069] To manufacture an optoelectronic system 200 in a first method step an optoelectronic component 100 according to the above- mentioned embodiments is provided .

[0070] In a further method step an edge emitting laser EEL unit 201 with a laser coupling face 203 is provided, wherein the laser coupling face 203 comprises an emitting area 205 for emitting laser signals generated by the EEL unit 201 .

[0071] In a further method step the EEL unit 201 is coupled to the optoelectronic component 100 by means of edge coupl ing .

[0072] In order to perform the edge coupling in a further method step the laser coupling face 203 of the EEL unit 201 and the coupling face 107 of the optoelectronic component 100 are brought into contact .

[0073] In a further method step the laser coupling face 203 and the coupling face 107 of the optoelectronic component 100 are aligned to each other such that the emitting area 205 of the laser coupling face 203 is aligned to the input port 109 of the optical waveguide 105 of the optoelectronic component 100 . During the alignment at least one element 207 of the laser coupling face 203 of the EEL unit 201 is accommodated by the at least one recess area 111 of the coupling face 107 of the optoelectronic component 100 . The element 207 o f the laser coupling face 203 can either be a protruding element protruding from the laser coupling face 203 or can be parts of the laser coupling face with tilted orientation .

[0074] Figure 3 shows multiple schematic views of a coupling face 107 of the optoelectronic component 100 according to multiple embodiments .

[0075] In graphics a ) to d) four di f ferent embodiments of the coupling face 107 of the PIC chip 101 with di f ferently shaped recess areas 111 are shown . In all embodiments , two recess areas 111 are formed in the coupling face 107 , each positioned on opposing sides of the input port 109 of the optical waveguide 105 with respect to the transversal direction x . In all four embodiments the two neighboring recess areas 111 form a contact dome 113 with a planar contact facet 115 with the input port 109 of the optical waveguide 105 being formed in the planar contact facet 115 .

[0076] Graphic a ) shows the embodiment of Fig . 2 with the contact dome 113 having a trapezoidal shape comprising the planar contact facet 115 with two slanted sidewalls 117 . The slanted sidewalls 117 are tilted with respect to the x-axis .

[0077] Graphic b ) shows a contact dome 113 having a rectangular shape with the planar contact facet 115 and two parallel sidewalls 117 . In the shown embodiment the recess areas 111 have a rectangular shape with planar sidewalls 129 oriented perpendicular to the coupling face 107 and a planar base wall 131 being oriented parallel to the coupling face 107 . In graphic c ) the contact dome 113 again has a rectangular shape with the planar contact facet 115 and parallel sidewalls 117 . In contrast to the embodiment in graphic b ) , the embodiment in graphic c ) however shows slanted base walls 131 of the recess areas 111 being angled to the coupling face 107 .

[0078] The embodiment in graphic d) is based on the embodiment in graphic c ) . In contrast to the embodiment in graphic c) in graphic d) the mostly rectangular shaped contact dome 113 comprises rounded corners 119 between the planar contact facet 115 and the parallel sidewalls 117 .

[0079] In contrast to this , in the embodiments in graphics a ) to c ) the corners 119 between the planar contact facet 115 and the sidewalls 117 are not rounded .

[0080] In all four shown embodiments a first contact level 123 of the planar contact facet 115 is equal to a second contact level 125 of the coupling face 107 with the contact levels 123 , 125 being with respect to a longitudinal direction y of the PIC chip 101 .

[0081] Figure 4 shows further multiple schematic views of the optoelectronic component 100 according to multiple further embodiments .

[0082] Figure 4 shows multiple di f ferent embodiments of the contact dome 113 . In the shown embodiments in graphics A to F the contact dome 113 comprises at least two contact protrusions 121 formed on the contact facet 115 . The at least two contact protrusions 121 are formed on opposing sides of the input port 109 respectively .

[0083] The embodiment of graphic a ) is based on the embodiment of graphic a ) in Fig . 3 . The contact dome 113 comprises a trapezoidal shape with the planar contact facet 115 and the slanted sidewalls 117 . The contact protrusions 121 are formed on the planar contact facet 115 and comprise a mostly trapezoidal shape . The trapezoidal shaped contact protrusions 121 comprise a planar head facet 135 and slanted sidewalls 133 .

[0084] In the embodiment of graphic b ) the contact dome 113 again comprises the trapezoidal shape , as well as the contact protrusions 121 . The recess areas 111 however are shaped similar to the embodiment of graphic b ) in Fig . 3 and comprise a mostly rectangular shape sidewalls 129 perpendicular to the coupling face 107 and base walls 131 being parallel to the coupling face 107 .

[0085] The embodiment of graphic c ) is based on the embodiment of graphic b ) in the embodiment of graphic c ) the sidewalls 133 of the contact protrusions are aligned to the slanted sidewalls 117 of the contact dome 113 .

[0086] In the embodiment in graphic b ) the head facets 135 of the contact protrusions 121 are positioned at the first contact level 123 higher than the second contact level 125 of the coupling face 107 .

[0087] In the embodiment of graphic c ) the head facets 135 of the contact protrusions 121 are positioned at the first contact level 123 equal to the second contact level 125 of the coupling face 107 .

[0088] In the embodiment of graphic d) the contact dome 113 comprises an irregular shape comprising the planar contact facet 115 , one slanted sidewall 117 and one sidewall 117 being oriented perpendicular to the contact face 107 . As a result , one contact protrusion 121 comprises a trapezoidal shape comparable to the embodiment shown in graphic c ) with the slanted sidewall 133 aligned to the slanted sidewall 117 of the contact dome . The other contact protrusion 121 comprises an irregular shape having one slanted sidewall 133 and one sidewall 133 being oriented perpendicular to the coupling face 107 and aligned to the respective sidewall 117 of the contact dome 113 . The recess areas 111 comprise the slanted base walls 131 angled to the contact face 107 shown in the embodiment of graphic c ) in Fig . 3 .

[0089] The embodiments of graphics e ) and f ) are based on the embodiment in graphic a ) . In the embodiments of graphics e ) and f ) multiple input ports 109 of multiple optical waveguides 105 are formed in the planar contact facet 115 of the contact dome 113 . In the embodiment of graphic e ) the two input ports 109 of the two optical waveguides 105 are separated by a third contact protrusion 121 .

[0090] Figure 5 shows further multiple schematic views of the optoelectronic component 100 and the optoelectronic system 200 according to multiple further embodiments .

[0091] Graphics a ) to c ) show a further embodiment of the current invention . In graphics a ) and b ) a perspective view of the PIC chip 101 is shown illustrating a hori zontal surface 139 and a vertical surface 141 of the PIC chip 101 . In the shown embodiment a third recess area 111 is formed in the contact face 107 of the PIC chip 101 . Comparable to the embodiments discussed with respect to Figs . 2 to 4 two recess areas 111 are positioned on opposite sides of the input port 109 with respect to the transversal direction x of the PIC chip 101 . The third recess area 111 is positioned with respect to a vertical axis z of the PIC chip 101 on the vertical surface 141 of the PIC chip 101 . In the shown embodiments in graphics a ) and b ) the contact dome 113 shows a trapezoidal shape with respect to the transversal axis x with the planar contact facet 115 and the two slanted sidewalls 117 . In graphic b ) the contact dome 113 further comprises two contact protrusions 121 comparable to the embodiment shown in graphic c ) in Fig . 4 .

[0092] In the shown embodiment the third recess area 111 comprises a planar wall 131 parallel to the coupling face 107 and at least one slanted sidewall 133 angled to the coupling face 107 . Via the three recess areas 111 tilting ef fects with regard to the transversal direction x and the vertical direction z of the EEL unit 201 and the protrusion of protruding elements 207 of the laser coupling face 203 can be mitigated .

[0093] In graphic c ) such a possible protrusion of a protruding element 207 of the laser coupling face 203 is accommodated by the third recess area 111 . The respective mitigation ef fect of the tilting is identical to the case discussed with regard to graphic b ) of Fig . 2 .

[0094] The height H of the recess areas 111 can be smaller or equal to an extension of the coupling face 107 .

[0095] Figure 6 shows a schematic illustration of a method for manufacturing an optoelectronic component 100 according to an embodiment .

[0096] The recess areas 111 can be formed into the coupling face 107 of the PIC chip 101 by means of etching processes known from state of the art . For this the use of respectively shaped etching masks 137 are known from state of the art and can lead to the di f ferently shaped recess areas 111 as well as the contact dome 113 and contact protrusions 121 of the above shown embodiments can be achieved .

[0097] To manufacture an optoelectronic component 100 , speci fically a photonic integrated circuit , of the above-mentioned embodiments , in a first method step a PIC chip 101 with a waveguide structure 103 with at least one optical waveguide 105 and a coupling face 107 is provided, wherein an input port 109 of the at least one optical waveguide 105 is formed into the coupling face 107 .

[0098] In a further method step at least one recess area 111 is formed into the coupling face 107 by means of an etching process . The recess area 111 is positioned in proximity to the input port 109 of the at least one optical waveguide 105 . The etching process can further comprise the formation of a respective contact dome 113 and eventually contact protrusions 121 according to the above-mentioned embodiments .

[0099] List of reference signs optoelectronic component photonic integrated circuit PIC chip optical waveguide structure optical waveguide coupling face input port recess area contact dome planar contact facet side wall corner contact protrusion first contact level second contact level air gap sidewall of the recess area base wall of the recess area sidewall of the contact protrusion head facet of the contact protrusion etching mask hori zontal surface vertical surface optoelectronic system Edge Emitting Laser EEL unit laser coupling face emitting area protruding element of laser coupling face optoelectronic system from state of the art optoelectronic component from state of the art Photonic Integrated Circuit PIC chip optical waveguide Edge Emitting Laser EEL unit from state of the art coupling face laser coupling face 313 input port

[0100] 315 emitting area

[0101] 317 protruding element of laser coupling face

[0102] 319 mechanical contact point 321 air gap x hori zontal axis y hori zontal axis z vertical axis wl width of the recess area w2 width of the laser coupling face w3 width of neighboring recess area

Claims

claims1. Optoelectronic component (100) , especially a photonic integrated circuit PIC, comprising a photonic integrated circuit PIC chip (101) and an optical waveguide structure (103) with at least one optical waveguide (105) placed on the PIC chip (101) , wherein the PIC chip (101) comprises a coupling face (107) to allow for an edge coupling of the optoelectronic component (100) to an edge emitting laser EEL unit (201) by means of edge coupling, wherein an input port (109) of the at least one optical waveguide (105) for inputting laser signals of the EEL unit (201) into the photonic integrated circuit is formed into the coupling face (107) , and wherein at least one recess area (111) is formed into the coupling face (107) neighboring to the input port (109) of the at least one optical waveguide (105) .

2. Optoelectronic component (100) of claim 1, wherein multiple recess areas (111) are formed in the coupling face (107) each neighboring the input port (109) of the at least one optical waveguide (105) , and wherein a contact dome (113) with a planar contact facet (115) is formed by the multiple recess areas (111) with the input port (109) of the at least one optical waveguide (105) being formed in the planar contact facet (115) .

3. Optoelectronic component (100) of claim 1 or 2, wherein the at least one recess area (111) has a rectangular shape or a triangular shape or a trapezoidal shape or a curved shape or an irregular shape.

4. Optoelectronic component (100) of any of the previous claims, wherein the contact dome (113) has a rectangular shape or a trapezoidal shape or a curved or irregular shape with curved or irregular shaped side walls (117) and the planar contact facet (115) .

5. Optoelectronic component (100) of any of the previous claims, wherein the contact dome (113) has rounded corners (119) between the planar contact facet (115) and the side walls (117) of the contact dome (113) .

6. Optoelectronic component (100) of any of the previous claims 2 to 5, wherein multiple contact protrusions (121) are formed on the planar contact facet (115) .

7. Optoelectronic component (100) of claim 6, wherein the contact protrusions (121) form a ring like structure surrounding the input port (109) of the at least one optical waveguide (105) .

8. Optoelectronic component (100) of claim 6 or 7, wherein the contact protrusions (121) have a rectangular shape or a trapezoidal shape or a curved shape.

9. Optoelectronic component (100) of any of the previous claims 2 to 7, wherein multiple input ports (109) of multiple optical waveguides (105) are formed in the planar contact facet (115) .

10. Optoelectronic component (100) of claim 9, wherein the multiple input ports (109) are separated by at least one contact protrusion (121) .

11. Optoelectronic component (100) of any of the previous claims 2 to 10, wherein the planar contact facet (115) or the contact protrusions (121) of the contact dome (113) are positioned at a first contact level (123) equal or higher or lower than a second contact level (125) of the coupling face (107) .

12. Optoelectronic component (100) of any of the previous claims 2 to 11, wherein the multiple recess areas (111) are distanced to each other along a horizontal axis (x) and or along a vertical axis (z) of the PIC chip (101) .

13. Optoelectronic system (200) comprising the optoelectronic component (100) of any of the previous claims 1 to 12 and an Edge Emitting Laser EEL unit (201) with a laser coupling face (203) , wherein the EEL unit (201) is coupled with the laser coupling face (203) to the coupling face (107) of the optoelectronic component (100) by means of edge coupling.

14. Method of manufacturing an optoelectronic component(100) , especially a photonic integrated circuit, of any of the previous claims 1 to 12, comprising: Providing a PIC chip (101) with a waveguide structure (103) with at least one optical waveguide (105) and a coupling face (107) , wherein an input port (109) of the at least one optical waveguide (105) is formed into the coupling face (107) ; Forming at least one recess area (111) into the coupling face (107) by means of an etching process, wherein the at least one recess area (111) is positioned in proximity to the input port (109) of the at least one optical waveguide (105) .

15. Method of manufacturing an optoelectronic system (200) according to claim 13, comprising:Providing an optoelectronic component (100) of any of the previous claims 1 to 12; Providing an Edge Emitting Laser EEL unit (201) with a laser coupling face (203) , wherein the laser coupling face (203) comprises an emitting area (205) for emitting laser signals generated by the EEL unit (201) ; Coupling the EEL unit (201) to the optoelectronic component (100) by means of edge coupling, comprising: Bringing the laser coupling face (203) of the EEL unit (201) and the coupling face (107) of the optoelectronic component (100) into contact; and Aligning the laser coupling face (203) and the coupling face (107) of the optoelectronic component (100) suchthat the emitting area (205) of the laser coupling face (203) is aligned to the input port (109) of the optical waveguide (105) of the optoelectronic component (100) , wherein during the alignment at least one element (207) of the laser coupling face (203) of the EEL unit (201) are accommodated by the at least one recess area (111) of the coupling face (107) of the optoelectronic component (100) .

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