Reverse surface processing device, substrate processing system, and substrate transport method

Abstract

The purpose of the present invention is to improve throughput of a series of processes including processes for forming a friction reduction film on the reverse surface of a substrate.　A reverse surface processing device (2) has three or more processing blocks (BL) stacked in the vertical direction, each of the processing blocks (BL) being provided with: a transport mechanism for transporting a substrate; a film formation unit (31) for forming a friction reduction film on the reverse surface of the substrate; and a temperature adjustment unit (32) for adjusting the temperature of the substrate on which the friction reduction film is formed on the reverse surface.

Description

Rear surface processing apparatus, substrate processing system, and substrate transport method

[0001] The present disclosure relates to a rear surface processing apparatus, a substrate processing system, and a substrate transport method.

[0002] Patent Document 1 discloses a processing system including a processing station provided with a friction-reducing film forming device that forms a friction-reducing film on the back surface of a substrate before exposure processing to reduce friction between the back surface of the substrate and a holding surface that holds the back surface of the substrate during exposure processing. The processing station includes first to third blocks. The first block is provided with a back surface cleaning device that cleans the back surface of the substrate. The second block is provided with the friction-reducing film forming device described above, as well as a heat treatment device that performs heat treatment such as heating and cooling the substrate, and an ultraviolet treatment device that irradiates the back surface of the substrate with ultraviolet rays. The third block is provided with a transfer device. The area surrounded by the first to third blocks is provided with a substrate transport device that can transport the substrate to a predetermined device in the surrounding blocks.

[0003] Japanese Patent Application Laid-Open No. 2019-121683

[0004] The technology according to the present disclosure improves the throughput of a series of processes including a process for forming a friction-reducing film on the rear surface of a substrate.

[0005] One aspect of the present disclosure is a rear surface processing device having three or more processing blocks stacked vertically, each of which is provided with a transport mechanism for transporting a substrate, a film forming unit for forming a friction-reducing film on the rear surface of the substrate, and a temperature adjustment unit for adjusting the temperature of the substrate on which the friction-reducing film has been formed.

[0006] According to the present disclosure, it is possible to improve the throughput of a series of processes including a process for forming a friction-reducing film on the rear surface of a substrate.

[0007] 10 is a diagram schematically illustrating the outline of the configuration of a wafer processing system as a substrate processing system including a back surface processing apparatus according to a first embodiment. FIG. 11 is a plan view schematically illustrating the outline of the configuration of the back surface processing apparatus according to the first embodiment. FIG. 12 is a diagram schematically illustrating the internal configuration of a rear side portion in the depth direction of the back surface processing apparatus according to the first embodiment. FIG. 13 is a diagram schematically illustrating the internal configuration of a front side portion in the depth direction of the back surface processing apparatus according to the first embodiment. FIG. 14 is a diagram schematically illustrating the internal configuration of a central portion in the depth direction of the back surface processing apparatus according to the first embodiment. FIG. 15 is a plan view schematically illustrating the outline of the configuration of a coating and developing apparatus. FIG. 16 is a front view schematically illustrating the outline of the configuration of the coating and developing apparatus. FIG. 17 is a flowchart showing main steps of a processing sequence executed by the wafer processing system of FIG. 1. FIG. 18 is a diagram illustrating another example of the stacking configuration of units in the back surface processing apparatus. FIG. 19 is a cross-sectional view schematically illustrating the outline of the configuration of a film forming unit that forms a hydrophobic film on the back surface of a wafer and a hydrophobic film on the front surface of a wafer. FIG. 19 is a bottom view of a lid of an upper member. FIG. 19 is a diagram illustrating a state of a processing container when a processing sequence is executed by the film forming unit of FIG. 10. FIG. 1 is a plan view schematically showing the outline of the configuration of a back surface processing apparatus according to a second embodiment; FIG. 2 is a view showing the outline of the internal configuration of a rear side portion in the depth direction of the back surface processing apparatus according to the second embodiment; FIG. 3 is a view showing the outline of the internal configuration of a front side portion in the depth direction of the back surface processing apparatus according to the second embodiment; FIG. 4 is a view showing the outline of the internal configuration of a central portion in the depth direction of the back surface processing apparatus according to the second embodiment; FIG. 5 is a plan view schematically showing the outline of the configuration of a back surface processing apparatus according to a third embodiment; FIG. 6 is a view showing the outline of the internal configuration of a central portion in the depth direction of the back surface processing apparatus according to the third embodiment; and FIG. 7 is a front view schematically showing the outline of the configuration of a coating and developing apparatus according to a reference embodiment.

[0008] In the manufacturing process of semiconductor devices and the like, a desired resist pattern is formed on a substrate such as a semiconductor wafer (hereinafter referred to as a "wafer") by photolithography. Photolithography includes, for example, a resist coating process in which a resist solution is supplied onto a substrate to form a resist film, an exposure process in which the resist film is exposed to light in a predetermined pattern, and a development process in which the exposed resist film is developed to form a resist pattern.

[0009] In exposure machines used in photolithography, when a substrate is held by suction on a stage to prevent misalignment during exposure, stress is applied to the substrate, causing it to become distorted. This distortion of the substrate reduces the accuracy of alignment (overlay) between the underlying pattern of the resist film and the exposure pattern.

[0010] Patent Document 1 discloses forming a friction-reducing film on the back surface of a substrate before exposure processing to reduce friction between the back surface of the substrate and a holding surface that holds the back surface of the substrate during exposure processing. Forming a friction-reducing film on the back surface of the substrate in this manner reduces stress applied to the substrate when it is attached to the stage of an exposure machine, thereby suppressing distortion of the substrate. However, the technology disclosed in Patent Document 1 leaves room for improvement in terms of throughput.

[0011] In view of the above circumstances, the technology disclosed herein improves the throughput of a series of processes including a process for forming a friction-reducing film on the rear surface of a substrate.

[0012] Hereinafter, a rear surface processing apparatus and a substrate processing system according to this embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0013] First Embodiment <Wafer Processing System> FIG. 1 is a diagram schematically showing the outline of the configuration of a wafer processing system as a substrate processing system including a backside processing apparatus according to a first embodiment.

[0014] 1 includes a back surface processing apparatus 2 and a coating and developing apparatus 3. The back surface processing apparatus 2 mainly processes the back surface of a wafer serving as a substrate, and the coating and developing apparatus 3 mainly processes the front surface of the wafer.

[0015] The rear surface processing device 2 includes a film formation unit 31 and a temperature adjustment unit 32. The film formation unit 31 is an example of a film formation section that forms a friction-reducing film on the rear surface of the wafer. The friction-reducing film is a film that reduces friction between the rear surface of the wafer and a portion that contacts the rear surface (specifically, for example, a portion that adsorbs the wafer during exposure processing). The friction-reducing film is, for example, a hydrophobic film. The hydrophobic film is formed using, for example, HMDS (Hexa Methyl Disilazane) gas. When forming the friction-reducing film, the film formation unit 31 may heat the wafer. The temperature adjustment unit 32 is an example of a temperature adjustment section that adjusts the temperature of the wafer with the friction-reducing film formed on its rear surface. If the wafer is heated when forming the friction-reducing film, the temperature adjustment unit 32 cools the wafer.

[0016] The back surface processing apparatus 2 may further include at least one of a back surface cleaning unit 41 and a light irradiation unit 33. The back surface cleaning unit 41 is an example of a back surface cleaning section that cleans the back surface of the wafer. The back surface cleaning unit 41 may not only clean the back surface of the wafer, but also polish the back surface of the wafer. The back surface cleaning unit 41 cleans the back surface of the wafer W using, for example, a cleaning liquid and a cleaning member such as a cleaning brush. The light irradiation unit 33 is an example of a light irradiation section that irradiates the back surface of the wafer with light to remove a friction-reducing film formed on the back surface.

[0017] The coating and developing apparatus 3 includes a resist film forming unit 201, a PAB unit 202, a PEB unit 203, and a developing unit 204. The resist film forming unit 201 is an example of a resist film forming section. The resist film forming section forms a resist film on the front surface of the wafer, which is the surface on which a resist pattern is formed. In this embodiment, specifically, the resist film forming section forms a resist film on the front surface of a wafer whose back surface has a friction-reducing film formed thereon and whose temperature has been adjusted. The PAB unit 202 is an example of a heating section that heats a wafer on which a resist film has been formed before exposure. The PEB unit 203 is an example of another heating section that heats a wafer on which a resist film has been formed after exposure. The developing unit 204 is an example of a developing section that develops the resist film on the wafer that has been heated after exposure. A resist pattern is formed on the front surface of the wafer W by development in the developing unit 204.

[0018] The coating and developing apparatus 3 may further include a back surface cleaning unit 205 that cleans the back surface of the wafer. The back surface cleaning unit 205 cleans the back surface of the wafer immediately before exposure, for example.

[0019] The rear surface treatment apparatus 2 and the coating and developing apparatus 3 are arranged in a clean room. The clean room in which the rear surface treatment apparatus 2 is arranged and the clean room in which the coating and developing apparatus 3 is arranged may be the same. In this case, the rear surface treatment apparatus 2 and the coating and developing apparatus 3 are arranged in different areas of the same clean room. Furthermore, the clean room in which the rear surface treatment apparatus 2 is arranged and the clean room in which the coating and developing apparatus 3 is arranged may be spatially separated by a wall or the like and may be different rooms.

[0020] Although not shown, the wafer processing system 1 also includes an overhead hoist transport (OHT) that transports wafers between devices in carrier units. A carrier is a container that can accommodate multiple wafers at once. Specifically, the OHT transports carriers between the back surface processing device 2 and the coating and developing device 3. The transport of the carriers is not limited to the OHT, and may also be performed by an automated guided vehicle (AGV).

[0021] The wafer processing system 1 further includes a controller 4. The controller 4 processes computer-executable instructions that cause the wafer processing system 1 to perform the various steps described in this disclosure. The controller 4 may be configured to control each element of the wafer processing system 1 to perform the various steps described herein. In one embodiment, some or all of the controller may be included in the wafer processing system 1. The controller 4 may include a processing unit, a storage unit, and a communication interface. The controller 4 may be implemented, for example, by a computer. The processing unit may be configured to read from the storage unit a program that provides logic or routines that enable the various control operations to be performed, and to execute the read program to perform the various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processing unit for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), a SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the wafer processing system 1 via a communication line such as a LAN (Local Area Network).

[0022] <Reverse Side Processing Apparatus 2> Next, the configuration of the reverse side processing apparatus 2 will be described. Fig. 2 is a plan view schematically showing the configuration of the reverse side processing apparatus 2. Fig. 3 is a view showing the internal configuration of the rear side in the depth direction (positive side in the X direction) of the reverse side processing apparatus 2. Fig. 4 is a view showing the internal configuration of the front side in the depth direction (negative side in the X direction) of the reverse side processing apparatus 2. Fig. 5 is a view showing the internal configuration of the central part in the depth direction (X direction) of the reverse side processing apparatus 2.

[0023] As shown in FIG. 2, the rear surface processing apparatus 2 has a configuration in which a carrier station 10 and a processing station 11 are arranged in the width direction (Y direction) and integrally connected.

[0024] Wafers W are loaded and unloaded in carrier units from the carrier station 10. A mounting table 20 is provided in the carrier station 10. The mounting table 20 is provided with a plurality of mounting plates 21 along the depth direction (X direction in the figure) on which the carriers C are placed when the carriers C are loaded and unloaded from the rear surface processing apparatus 2.

[0025] 3 to 5, the processing station 11 has three or more processing blocks BL stacked vertically. In the example shown in the figures, the number of stacked processing blocks BL is three, and the three processing blocks BL are stacked adjacent to each other. Each processing block BL has a ceiling wall at its upper part and a bottom wall at its lower part, and is separated from the outside by these ceiling wall and bottom wall.

[0026] Each processing block BL is provided with a plurality of film forming units 31, a plurality of temperature adjustment units 32, a plurality of back surface cleaning units 41, and a transport unit 51. Each processing block BL is also provided with a light irradiation unit 33. A plurality of light irradiation units 33 may also be provided.

[0027] Each processing block BL has a first region R1 and a second region R2 that face each other across a transport region Rt in which a transport unit 51 is provided, in top view. The first region R1 is provided with a plurality of film formation units 31, a plurality of temperature adjustment units 32, and a light irradiation unit 33. The second region R2 is provided with a plurality of back surface cleaning units 41. In the first region R1, as shown in FIG. 3 , the film formation units 31, the temperature adjustment units 32, and the light irradiation units 33 are stacked in this order from the bottom up.

[0028] In the example shown in the figure, in each first region R1, three film forming units 31 and three temperature adjustment units 32 are arranged side by side in the width direction (Y direction). Also, in each first region R1, only one film forming unit 31 and one temperature adjustment unit 32 are arranged in the vertical direction (Z direction). That is, in each first region R1, only one layer is provided for each film forming unit 31 and each temperature adjustment unit 32, with three units arranged side by side in the width direction (Y direction). Also, in the example shown in FIG. 4, in each second region R2, two back surface cleaning units 41 are arranged side by side in both the width direction (Y direction) and the vertical direction (Z direction). That is, in each second region R2, the back surface cleaning units 41 are arranged across two layers arranged vertically, with two units arranged side by side in the width direction (Y direction) on each layer. That is, in the examples of FIGS. 3 and 4, the number of film forming units 31 and the number of temperature adjusting units 32 are equal, and the number of back surface cleaning units 41 is greater than the number of film forming units 31 and the temperature adjusting units 32.

[0029] In the example shown in the figure, in each first region R1, three light irradiation units 33 are arranged side by side in the width direction (Y direction), similar to the film formation units 31, etc. In each first region R1, only one light irradiation unit 33 is arranged in the vertical direction (Z direction), similar to the film formation units 31, etc.

[0030] The number of film forming units 31, temperature adjusting units 32, and back surface cleaning units 41 is not limited to the above example, and may be, for example, one or two, or may be different from each other. Furthermore, the number of light irradiation units 33 is not limited to the above example.

[0031] The processing times in the film forming unit 31, the temperature adjustment unit 32, and the back surface cleaning unit 41 are, in order from longest to shortest, the back surface cleaning unit 41, the film forming unit 31, and the temperature adjustment unit 32. Specifically, the processing time in the back surface cleaning unit 41 is 90 to 65 seconds, the processing time in the film forming unit 31 is 60 to 50 seconds, and the processing time in the temperature adjustment unit 32 is 20 to 10 seconds. Note that the processing time in each unit is, for example, the time from when the wafer W is carried into each unit until the wafer W, which has been processed by that unit, is carried out of that unit.

[0032] The transfer unit 51 is an example of a transfer mechanism that transfers a wafer W in the processing block BL. The transfer unit 51 has a transfer arm 51a as a substrate support unit that is configured to be movable in the depth direction (X direction in the figure), width direction (Y direction in the figure), vertical direction (Z direction in the figure), and around a vertical axis. As shown in FIG. 5 , two transfer arms 51a are provided for each transfer unit 51. Note that, hereinafter, one of the two transfer arms 51a may be referred to as transfer arm 51a1 and the other as transfer arm 51a2. Furthermore, each transfer arm 51a has a fork at its tip that holds the wafer W and is configured to move forward and backward. The transfer unit 51 can transfer the wafer W to a predetermined unit provided around the transfer region Rt.

[0033] Furthermore, the backside processing apparatus 2 includes a transfer tower 12 in which transfer units 61 are stacked in the vertical direction (Z direction in the figure). The transfer unit 61 is an example of a transfer section on which the wafer W is placed when the wafer W is transferred between the carrier station 10 and the processing block BL. In this embodiment, the transfer tower 12 is provided within the processing station 11. For example, the transfer tower 12 is provided between the carrier station 10 and the end of the transfer region Rt of the processing block BL on the carrier station 10 side, as viewed from above. The transfer tower 12 may be provided with a temperature adjustment unit similar to the temperature adjustment unit 32. That is, at least a portion of the transfer units 61 of the transfer tower 12 may be configured to be able to adjust the temperature of the wafer W.

[0034] The carrier station 10 described above is further provided with a transfer unit 22. The transfer unit 22 has a transfer arm 22a configured to be movable in the depth direction (X direction in the figure), width direction (Y direction in the figure), vertical direction (Z direction in the figure), and around the vertical axis (θ direction in the figure). The transfer arm 22a has a pick at its tip that holds the wafer W and is configured to move forward and backward. The transfer unit 22 is an example of another transfer mechanism that transfers the wafer W between the transfer unit 61 of the transfer tower 12 and the carrier C.

[0035] 2 and 3, the carrier station 10 may also be provided with an inspection unit 71. Specifically, a transfer box 13 may be provided in which a plurality of units including the inspection unit 71 are stacked. The inspection unit 71 is an example of an inspection section that inspects the wafer W. Specifically, the inspection unit 71 images the wafer W for purposes such as inspection of the wafer W. For example, the inspection unit 71 may image at least the front surface of the wafer W and may also image at least one of the peripheral edge surface and the back surface of the peripheral edge portion of the wafer W. The inspection unit 71 images the wafer W, for example, after all of the processes performed by the back surface cleaning unit 41, the film formation unit 31, and the temperature adjustment unit 32 are completed, or before the process performed by the light irradiation unit 33. The inspection unit 71 may also image the wafer W after the process performed by the light irradiation unit 33. The wafer W is transported to the inspection unit 71 by the transport unit 22.

[0036] The inspection unit 71 has, for example, a camera that inspects, i.e., images, only the bevel of the wafer W. By imaging only the peripheral edge and edge surface of the wafer W, it is possible to increase throughput and confirm that the friction-reducing film formed on the back surface does not spread to the front surface, and whether or not the friction-reducing film remains after removal by the light irradiation unit 33.

[0037] The delivery box 13 is provided, for example, on the rear side in the depth direction (positive side in the X direction in the drawing) and on the upper side (positive side in the Z direction in the drawing) of the carrier station 10 .

[0038] The rear surface processing apparatus 2 having the above-described configuration continuously performs multiple processes, including the friction-reducing film formation process and temperature adjustment process, and wafer transport, while the wafer W on which devices are formed remains facing up. In other words, the rear surface processing apparatus 2 does not need to be equipped with an inversion processing module that performs an inversion process to invert the wafer W from its front surface to its back surface. Without the inversion processing module, each module can be optimally positioned, improving throughput compared to when the inversion processing module is installed. For example, when the inversion processing module is installed in the transfer tower 12, the transfer unit 61 cannot be optimally positioned within the transfer tower 12. However, without the inversion processing module, the transfer unit 61 can be optimally positioned. As a result, the number of operations of the transport unit 51 can be reduced, improving throughput.

[0039] In the transfer tower 12 of the rear surface processing apparatus 2, the transfer units 61 may be provided separately for wafers W before processing by the light irradiation unit 33 (removal of the friction-reducing film from the rear surface) (i.e., for wafers W carried into the light irradiation unit 33) and wafers W after processing by the light irradiation unit 33 (i.e., for wafers W carried out from the light irradiation unit 33). This makes it possible to prevent contamination of the wafers W after removal of the friction-reducing film. Furthermore, in the transfer tower 12 of the rear surface processing apparatus 2, the transfer units 61 may be provided separately for four types: wafers before processing by the film formation unit 31 (formation of a friction-reducing film on the rear surface), wafers after processing by the film formation unit 31, wafers before processing by the light irradiation unit 33 (removal of the friction-reducing film from the rear surface), and wafers after processing by the light irradiation unit 33.

[0040] <Coating and Developing Apparatus 3> Figures 6 and 7 are plan and front views, respectively, that schematically illustrate the configuration of the coating and developing apparatus 3. As shown in Figure 6, the coating and developing apparatus 3 includes a carrier station 101 into which a carrier C accommodating a plurality of wafers W is loaded and unloaded, and a processing station 102 equipped with a plurality of various processing units that perform predetermined processing on the wafers W. The coating and developing apparatus 3 is configured by integrally connecting the carrier station 101 and an interface station 103 that transfers the wafers W between the processing station 102 and an exposure apparatus (not shown) adjacent to the opposite side of the processing station 102. Note that, as shown in Figure 6, two processing stations 102 are installed between the carrier station 101 and the interface station 103, but one or three or more processing stations 102 may be installed.

[0041] The carrier station 101 is equipped with a carrier mounting table 111, a wafer transfer unit 112, and a wafer transfer unit 113. The carrier mounting table 111 has multiple carrier mounting plates 114 arranged in the X direction. The carrier station 101 uses the wafer transfer unit 112 or the wafer transfer unit 113 to transfer wafers between the carrier C mounted on the carrier mounting table 111 and the processing station 102. To this end, the wafer transfer unit 112 and the wafer transfer unit 113 are each provided with a drive mechanism for movement in various directions, such as the horizontal direction (X direction and Y direction), the vertical direction (Z direction), and around a vertical axis (θ direction), as needed, and may also be provided with a drive mechanism for movement in all directions. At least one of the wafer transfer unit 112 and the wafer transfer unit 113 is capable of transferring wafers W between the carrier C and the processing station 102. The operation of transferring the wafer W to and from the processing station 102 refers to, for example, transferring the wafer W to and from a third block G3 that includes a transfer unit accessible by a wafer transfer unit 123 (described later) in the processing station 102. The third block G3 may include a plurality of transfer units (not shown) arranged vertically.

[0042] An inspection device (not shown) for inspecting the wafer W may be provided at a position accessible to either the wafer transfer unit 112 or the wafer transfer unit 113 .

[0043] The processing station 102 is provided with multiple blocks, e.g., three blocks G1, G2, and G4 (first, second, and fourth blocks). As shown in FIG. 7 , multiple layers 121 each including the first and second blocks G1 and G2 are stacked vertically. For example, the first block G1 is provided on the front side of the processing station 102 (negative side in the X direction in FIG. 7 ), and the second block G2 is provided on the rear side of the processing station 102 (positive side in the X direction in FIG. 1 ). The fourth block G4 is provided on the interface station 103 side of the processing station 102 (positive side in the Y direction in FIG. 7 ) or at the connection portion with another adjacent processing station 102. The fourth block G4 may include multiple transfer units arranged vertically. The aforementioned third block G3 may also be provided within the processing station 102.

[0044] The first block G1 is provided with a plurality of processing units, such as a patterning film forming unit (not shown) and the aforementioned developing unit 204 (see FIG. 1). The patterning film forming apparatus may include, for example, the aforementioned resist film forming unit 201 (see FIG. 1) as well as an anti-reflection film forming unit.

[0045] For example, the plurality of processing units are arranged in a horizontal line in the first block G1. Note that the number, arrangement, and types of these processing units in the first block G1 can be selected arbitrarily.

[0046] In these patterning film forming units and developing unit 204, for example, a predetermined processing liquid or a predetermined gas is supplied onto the wafer W. In this manner, the patterning film forming unit forms a resist film used as a mask when forming a pattern of an underlying film, and an anti-reflection film for efficiently performing a light irradiation process, such as an exposure process. On the other hand, in the developing process unit, a portion of the exposed resist film is removed to form an uneven shape that serves as the mask.

[0047] For example, in the second block G2, thermal processing units (not shown) that perform thermal processing such as heating and cooling of the wafer W are arranged vertically and horizontally. The aforementioned PAB unit 202 and PEB unit 203 correspond to these thermal processing units. Also, in the second block G2, although neither is shown, a hydrophobic processing unit that performs a hydrophobic processing to improve the fixation of the resist liquid to the wafer W and a peripheral exposure unit that exposes the peripheral portion of the wafer W are arranged vertically (Z direction) and horizontally. The number and arrangement of these thermal processing units, hydrophobic processing units, and peripheral exposure units can also be selected as desired.

[0048] 6, a wafer transfer area 122 is formed in an area sandwiched between the first block G1 and the second block G2 in a plan view. In the wafer transfer area 122, for example, a wafer transfer unit 123 is disposed.

[0049] The wafer transfer unit 123 has a transfer arm that is movable in, for example, the Y direction, the front-rear direction, the θ direction, and the Z direction. The wafer transfer unit 123 moves within the wafer transfer region 122 and can transfer the wafer W to predetermined units in the surrounding first block G1, second block G2, third block G3, and fourth block G4. When there are multiple processing stations 102 as shown in Figure 6, the wafer transfer unit 123 provided in the processing station 102 located on the interface station 103 side can transfer the wafer W to predetermined units in the fifth block G5 (described below) in addition to the first, second, and fourth blocks G1, G2, and G4.

[0050] A plurality of wafer transfer units 123 are arranged, for example, one above the other. One wafer transfer unit 123 can transfer a wafer W to a predetermined unit located at the height of the upper layers 121 among the multiple layers 121 stacked one above the other. Another wafer transfer unit 123 can transfer a wafer W to a predetermined unit located at the height of the multiple layers 121 located below the above layers 121. A plurality of wafer transfer areas 122 are provided to enable such transfer of wafers W. Note that the number of wafer transfer units 123 and the number of layers 121 corresponding to one wafer transfer unit 123 can be selected arbitrarily, such as by providing a wafer transfer unit 123 for each layer 121.

[0051] The wafer transfer region 122, the first block G1, or the second block G2 may also include a shuttle transfer unit (not shown) that linearly transfers the wafer W between a space adjacent to one side of the processing station 102 and another space adjacent to the opposite side.

[0052] The interface station 103 is provided with a fifth block G5 equipped with a plurality of transfer units, a wafer transfer unit 131, and a wafer transfer unit 132. The interface station 103 uses the wafer transfer unit 131 or the wafer transfer unit 132 to transfer the wafer W between the fifth block G5, where the wafer W is transferred by the wafer transfer unit 123, and the exposure device. To this end, the wafer transfer unit 131 and the wafer transfer unit 132 are each provided with a drive mechanism for movement in each direction, such as the X direction, the Y direction, the Z direction, and around the vertical axis (the θ direction), as needed, and may also be provided with a drive mechanism for movement in all directions. At least one of the wafer transfer unit 131 and the wafer transfer unit 132 can support the wafer W and transfer the wafer W between the transfer units in the fifth block G5 and the exposure device.

[0053] A front surface cleaning unit for cleaning the front surface of the wafer W, the aforementioned peripheral exposure device, and the back surface cleaning unit 205 may be provided in a position within the interface station 103 that is accessible by either the wafer transfer unit 131 or the wafer transfer unit 132.

[0054] The inspection unit may be provided in the carrier station 101 as described above, but it may also be provided in the processing station 102 and the interface station 103 at a position accessible to any of the wafer transport units 123, 131, and 132 provided inside each of them.

[0055] <Example of Processing Sequence> Next, a description will be given of an example of a processing sequence executed by the wafer processing system 1. FIG.

[0056] 8 , first, the back surface of the wafer W is cleaned by the back surface processing apparatus 2 (step S1). Specifically, for example, first, a carrier C storing a plurality of wafers W is loaded into the carrier station 10 of the back surface processing apparatus 2 and placed on the mounting plate 21. Then, the transfer unit 22 removes the wafer W from the carrier C and transfers it to the transfer unit 61 of the transfer tower 12. Next, the transfer unit 51 transfers it to a predetermined back surface cleaning unit 41 in a predetermined processing block BL. Then, the back surface cleaning unit 41 cleans the back surface of the wafer W with water as a cleaning liquid and a cleaning member. At this time, after the back surface of the wafer W is polished with a polishing member in the back surface cleaning unit 41, the back surface of the wafer W may be cleaned in a similar manner.

[0057] Next, a friction-reducing film is formed on the back surface of the wafer W (step S2). Specifically, for example, the wafer W is transferred by the transfer unit 51 from the back surface cleaning unit 41 to a predetermined unit among the film formation units 31 provided in the same processing block BL as the back surface cleaning unit 41. The film formation unit 31 then heats the wafer W and supplies HMDS gas, which serves as a source gas for the friction-reducing film, to the back surface of the wafer W. This results in the formation of a friction-reducing film on the back surface of the wafer W. Note that supplying HMDS gas to the back surface of the wafer W can be considered film formation, in which a friction-reducing film is formed on the wafer W. Furthermore, supplying HMDS gas to the back surface of the wafer W can be considered surface modification, in which the back surface is modified by the HMDS gas.

[0058] Next, the temperature of the wafer W is adjusted (step S3). Specifically, for example, the wafer W is transferred by the transfer unit 51 from the film formation unit 31 to a predetermined unit among the temperature adjustment units 32 provided in the same processing block BL as the film formation unit 31. The wafer W is then cooled by the temperature adjustment unit 32; specifically, the wafer W is cooled for a predetermined time. After cooling, the wafer W is transferred by the transfer unit 51 to the transfer unit 61 of the transfer tower 12, and then returned to the carrier C by the transfer unit 22. Steps S1 to S3 are performed for all wafers W in the carrier C.

[0059] In this way, each wafer W in the carrier C that has been brought into the back surface processing device 2 is transported in the order of the transfer unit 61, the back surface cleaning unit 41, the film formation unit 31, and the temperature adjustment unit 32, and then returned to the carrier C via the transfer unit 61.

[0060] Thereafter, a hydrophobic film is formed on the front surface of the wafer W by the coating and developing apparatus 3 (step S4). Specifically, for example, a carrier C storing a plurality of wafers W is loaded into the carrier station 101 of the coating and developing apparatus 3 and placed on the carrier mounting plate 114. Next, each wafer W in the carrier C is sequentially removed by the wafer transfer unit 112 or the wafer transfer unit 113 and transferred to the transfer unit in the third block G3. The wafer W transferred to the transfer unit in the third block G3 is supported by the wafer transfer unit 123 and transferred to the hydrophobic treatment unit provided in the second block G2, where hydrophobic treatment is performed. As a result, a hydrophobic film is formed on the front surface of the wafer W.

[0061] Next, a resist film is formed on the surface of the wafer W (step S5). Specifically, the wafer W is transferred by the wafer transfer unit 123 to a resist film forming unit 201 provided in the first block G1, and a resist film is formed on the wafer W.

[0062] Next, the wafer W is pre-baked (step S6). Specifically, the wafer W is transferred by the wafer transfer unit 123 to the PAB unit 202 provided in the second block G2, where it is pre-baked. Thereafter, the wafer W is transferred to the transfer unit in the fifth block G5. Note that, when there are multiple processing stations 102 as shown in FIGS. 6 and 7, the wafer W is temporarily placed in the transfer unit in the fourth block G4 before being transferred to the transfer unit in the fifth block G5, and then transferred between the multiple wafer transfer units 123.

[0063] Subsequently, the back surface of the wafer W is cleaned (step S7). Specifically, the wafer W is transferred by the wafer transfer unit 131 or the wafer transfer unit 132 from the delivery unit in the fifth block G5 to the back surface cleaning unit 205 in the interface station 103, where the back surface is cleaned.

[0064] Thereafter, the wafer W is exposed (step S8). Specifically, the wafer W is transferred from the back surface cleaning unit 205 to the exposure device by the wafer transfer unit 131 or the wafer transfer unit 132, and is exposed to a predetermined pattern.

[0065] Next, the wafer W is subjected to post-exposure baking (step S9). Specifically, the wafer W is transferred to the transfer unit in the fifth block G5 by the wafer transfer unit 131 or the wafer transfer unit 132, and then transferred to the PEB unit 203 provided in the second block G2 by the wafer transfer unit 123, where the wafer W is subjected to post-exposure baking.

[0066] Next, the wafer W is developed (step S10). Specifically, the wafer W that has been subjected to post-exposure baking is transferred by the wafer transfer unit 123 to the developing unit 204 provided in the first block G1, where it is developed. Thereafter, the wafer W is transferred by the wafer transfer unit 123 to the delivery device in the third block G3, and is returned to the carrier C by the wafer transfer unit 112 or the wafer transfer unit 113 of the carrier station 101. Steps S4 to S10 are performed for all wafers W in the carrier C.

[0067] Then, the friction-reducing film on the backside of the wafer W is removed by the backside processing apparatus 2 (step S11). Specifically, for example, first, a carrier C storing multiple wafers W is loaded into the carrier station 10 of the backside processing apparatus 2 and placed on the mounting plate 21. Then, the transfer unit 22 removes the wafers W from the carrier C and transfers them to the transfer unit 61 of the transfer tower 12. Next, the transfer unit 51 transfers the wafers W to a predetermined light irradiation unit 33 in a predetermined processing block BL. Then, the light irradiation unit 33 irradiates the entire backside of the wafer W with ultraviolet light. Specifically, the irradiated ultraviolet light has a peak wavelength of, for example, 172 nm. The optical energy of this ultraviolet light decomposes and removes the friction-reducing film on the backside of the wafer W. Furthermore, oxygen in the atmosphere is activated by the ultraviolet light, generating ozone gas around the backside of the wafer W. The chemical action of this ozone gas also decomposes and removes the friction-reducing film on the backside of the wafer W. After the friction-reducing film is removed, the wafer W is transferred by the transfer unit 51 to the transfer unit 61 of the transfer tower 12, and then returned to the carrier C by the transfer unit 22. Step S11 is performed for all wafers W in the carrier C.

[0068] In this way, each wafer W in the carrier C that has been loaded back into the rear surface processing apparatus 2 is transferred to the light irradiation unit 33 via the transfer unit 61, and then returned to the carrier C via the transfer unit 61.

[0069] This completes the processing sequence of this example.

[0070] <Major Effects of the Present Embodiment> As described above, in the present embodiment, the rear surface processing apparatus 2 has three or more processing blocks BL stacked vertically. Each processing block BL is provided with a transfer mechanism for transferring the wafer W, a film formation unit 31 for forming a friction-reducing film on the rear surface of the wafer W, and a temperature adjustment unit 32 for adjusting the temperature of the wafer W on whose rear surface the friction-reducing film has been formed. Therefore, the formation of the friction-reducing film on the rear surface of the wafer W and the subsequent temperature adjustment of the wafer W can be performed in parallel for at least the number of processing blocks BL. Therefore, according to the present embodiment, the throughput of a series of processes including the process of forming a friction-reducing film on the rear surface of the wafer W can be improved. Specifically, the throughput of a series of processes in the rear surface processing apparatus 2 including the following processes can be improved. - Friction-reducing film formation process for forming a friction-reducing film on the rear surface of the wafer W - Temperature adjustment process for adjusting the temperature of the wafer W after the friction-reducing film has been formed

[0071] Each processing block BL of the rear surface processing apparatus 2 is also provided with a rear surface cleaning unit 41 that cleans the rear surface of the wafer W. Therefore, according to this embodiment, formation of a friction-reducing film on the rear surface of the wafer W, subsequent temperature adjustment of the wafer W, and cleaning of the rear surface of the wafer W can be performed in parallel for at least the number of processing blocks BL. This improves the throughput of a series of processes including the process of forming a friction-reducing film on the rear surface of the wafer W. According to this embodiment, it is possible to improve the throughput of a series of processes in the rear surface processing apparatus 2, including the friction-reducing film formation process, the temperature adjustment process, and the rear surface cleaning process that cleans the rear surface of the wafer W.

[0072] In this embodiment, each processing block BL is divided into a first region R1 and a second region R2 that face each other across a transport region Rt in which a transport unit 51 is provided. The first region R1 is provided with a film formation unit 31 and a temperature adjustment unit 32, and the second region R2 is provided with a back surface cleaning unit 41. This reduces unnecessary movement of the transport arm 51a. Specifically, with less movement in the width direction (Y direction in the figure), transport from the back surface cleaning unit 41 to the film formation unit 31 after processing in the unit, and transport from the film formation unit 31 to the temperature adjustment unit 32 after processing in the unit, can be performed. This improves throughput.

[0073] As described above, there are cases where the film formation unit 31 heats the wafer W and the temperature adjustment unit 32 cools the wafer W. In this case, the heat from the film formation unit 31 (specifically, the heat from the hot plate of the film formation unit 31 that heats the wafer W placed thereon) may affect the light irradiation unit 33 (specifically, the electrical components of the light irradiation unit 33). Therefore, in this embodiment, as described above, the film formation unit 31, the temperature adjustment unit 32, and the light irradiation unit 33 are stacked in this order from the bottom up in the first region R1 of each processing block BL. This allows the temperature adjustment unit 32 to function as a heat buffer, thereby preventing the heat from the film formation unit 31 from affecting the light irradiation unit 33.

[0074] In this embodiment, the processing times in the back surface cleaning unit 41, the film formation unit 31, and the temperature adjustment unit 32 are, in order from longest to shortest, the back surface cleaning unit 41, the film formation unit 31, and the temperature adjustment unit 32. In each processing block BL, the number of film formation units 31 and the temperature adjustment units 32 is equal, and the number of back surface cleaning units 41 is greater. Therefore, back surface cleaning by the back surface cleaning unit 41 can be prevented from causing a delay in processing, and therefore, in each processing block BL, waiting times for the film formation units 31 and the temperature adjustment units 32 that perform processing on wafers W after back surface cleaning can be prevented.

[0075] <Another example of processing sequence> In step S10, after the friction-reducing film is removed from the back surface of the wafer W in the back surface processing device 2, the wafer W may be transported to the back surface cleaning unit 41 before being returned to the carrier C, and the back surface of the wafer W after the friction-reducing film removal may be cleaned.

[0076] When the light irradiation unit 33 irradiates ultraviolet rays capable of generating ozone gas, in step S1, the wafer W may be transferred to the light irradiation unit 33 in the backside processing apparatus 2 before the backside cleaning of the wafer W, and the backside of the wafer W may be irradiated with ultraviolet rays. This allows foreign matter, such as organic matter, that is difficult to remove in the backside cleaning unit 41 to be removed from the backside of the wafer W by the ozone gas generated by the ultraviolet rays. Furthermore, the ultraviolet irradiation increases the number of OH groups that react with HMDS gas on the surface of the backside of the wafer W, thereby improving the hydrophobicity efficiency, i.e., film formation efficiency, when forming a friction-reducing film on the backside. This ultraviolet irradiation for the purpose of removing foreign matter from the backside of the wafer W may be performed after the backside cleaning of the wafer W and before the formation of a hydrophobic film on the backside. The light irradiation unit 33 for removing foreign matter from the backside and the light irradiation unit 33 for removing the friction-reducing film may be common or separate.

[0077] The formation of the friction-reducing film on one wafer W in step S2 and the removal of the friction-reducing film on another wafer W in step S11 may be performed in parallel. In this case, if the formation of the friction-reducing film in step S2 and the removal of the friction-reducing film in step S11 have similar throughputs, the throughput can be improved by carrying out the following transport control sequence: transport of wafer A to the back surface cleaning unit 41, transport of wafer B to the light irradiation unit 33 while the back surface is being cleaned in the back surface cleaning unit 41, transport of wafer A to the film formation unit 31 after back surface cleaning in the back surface cleaning unit 41, transport of wafer B to the temperature adjustment unit 32 after the removal of the friction-reducing film in the light irradiation unit 33, transport of wafer B to the transfer unit 61 after temperature adjustment in the temperature adjustment unit 32, transport of wafer A to the temperature adjustment unit 32 after the formation of the friction-reducing film in the film formation unit 31, and then transport of wafer A to the transfer unit 61 after temperature adjustment in the temperature adjustment unit 32. This sequence of transport control can improve the throughput. When the formation of the friction-reducing film on one wafer W in step S2 and the removal of the friction-reducing film on another wafer W in step S11 are performed in parallel, the transport mode of the wafer W is not limited to the example described above.

[0078] <Modifications of Coating and Developing Apparatus 3> In the above example, after processing by the backside processing apparatus 2, such as formation of a friction-reducing film, multiple processes performed on the wafer W until development were all performed inline by the coating and developing apparatus 3 and the adjacent exposure apparatus (i.e., the wafer W unloaded from the carrier C was returned to the carrier C only after all processes were completed). In the above example, the multiple processes performed by the coating and developing apparatus 3 and the adjacent exposure apparatus may also be performed by multiple apparatuses in which the wafer W is transported between the apparatuses in carrier C units.

[0079] In this case, the "plurality of apparatuses" refers to a surface film forming apparatus, a heating apparatus, and a developing apparatus. The surface film forming apparatus includes a resist film forming unit 201 and a PAB unit 202. The heating apparatus includes a PEB unit 203. The heating apparatus is provided adjacent to the exposure apparatus, and in this heating apparatus, exposure and post-exposure bake processes are performed on the wafer W in-line. The developing apparatus includes a developing unit 204. In other words, the coating and developing apparatus 3 described above is an apparatus integrating the above-mentioned multiple apparatuses. The "plurality of apparatuses" may also refer to a surface film forming apparatus (first apparatus) including the resist film forming unit 201 and the PAB unit 202, and a second apparatus including the PEB unit 203 and the developing unit 204. In this case, the second apparatus performs post-exposure bake and development processes on the wafer W in-line. The second apparatus can be said to be the developing apparatus described above with a PEB unit 203 added, or to be an apparatus integrating the developing apparatus and the heating apparatus described above.

[0080] Regardless of the form of the "plurality of apparatuses," the apparatus in which the PEB unit 203 is provided and the exposure apparatus may be connected to each other or may be independent of each other. In the latter case, wafers W are transferred between the apparatuses in carrier units, for example.

[0081] <Specific Example of Transfer Mode in Rear Surface Processing Apparatus 2> Next, a specific example of the transfer mode of the wafer W by the transfer unit 51 in the rear surface processing apparatus 2 will be described. For example, when transferring a low-temperature wafer W, the transfer unit 51 may transfer the wafer W while supporting (specifically, holding by suction) the wafer W with the lower transfer arm 51a, and when transferring a high-temperature wafer W, the transfer unit 51 may transfer the wafer W while supporting the wafer W with the upper transfer arm 51a. For example, cases in which a low-temperature wafer W is transferred include cases in which the wafer is transferred to the rear surface cleaning unit 41, from the rear surface cleaning unit 41 to the film formation unit 31, and from the temperature adjustment unit 32. Cases in which a high-temperature wafer W is transferred include, for example, cases in which a wafer W on which a heated friction-reducing film has been formed is transferred from the film formation unit 31 to the temperature adjustment unit 32.

[0082] As described above, by changing whether the upper or lower transfer arm 51a is used depending on whether the wafer W is at a low temperature, the following effect can be achieved: That is, it is possible to prevent the low-temperature wafer W from being heated by at least one of the high-temperature wafer W and the transfer arm 51a heated by the high-temperature wafer W. Note that, unlike the above example, when a low-temperature wafer W is transferred, the wafer W may be supported and transferred by the upper transfer arm 51a, and when a high-temperature wafer W is transferred, the wafer W may be supported and transferred by the lower transfer arm 51a.

[0083] Furthermore, the suction pads (not shown) provided on the transport arm 51a may be different for the transport arm 51a used for the high-temperature wafer W and the transport arm 51a used for the low-temperature wafer W, and specifically, for example, may be made of different materials.

[0084] In addition, the transport arm 51a may be changed when transporting the wafer W during friction reduction film formation and when transporting the wafer W during friction reduction film removal, and the transfer unit 61 may also be changed.

[0085] <Another Example of Stacking Configuration of Units in the Rear Surface Processing Apparatus 2> In the above examples, in the first region R1 of each processing block BL, the film formation unit 31, the temperature adjustment unit 32, and the light irradiation unit 33 are stacked in this order from the bottom up. When the number of stacked processing blocks BL is three and the three processing blocks BL are adjacent to each other, the units within the first region R1 of the processing block BL may instead be stacked as shown in FIG. 9 . That is, in the first regions R1 of the upper and lower processing blocks BL, the film formation unit 31, the temperature adjustment unit 32, and the light irradiation unit 33 may be stacked in this order from the bottom up, and in the first region R1 of the middle processing block BL, the light irradiation unit 33, the temperature adjustment unit 32, and the film formation unit 31 may be stacked in this order from the bottom up.

[0086] When the film formation unit 31 heats the wafer W and the temperature adjustment unit 32 cools the wafer W, stacking as shown in Figure 9 can prevent the light irradiation unit 33 in the processing block BL from being affected not only by the heat of the film formation unit in the same processing block BL, but also by the heat of the film formation unit 31 in other processing blocks BL.

[0087] <Another Example of Film Forming Unit> In the above examples, the film forming unit 31 forms a friction-reducing film on the back surface of the wafer W, and another unit (specifically, the hydrophobization processing unit of the coating and developing apparatus 3) forms a hydrophobized film on the front surface of the wafer W. Alternatively, the film forming unit may form a hydrophobized film on the front surface of the wafer W when forming a friction-reducing film on the back surface of the wafer W. Specifically, the film generating unit may use HMDS gas, which is a hydrophobizing gas, to simultaneously form a friction-reducing film on the back surface of the wafer W and a hydrophobized film on the front surface of the wafer W. Note that "simultaneously" here means the period from when the wafer is loaded into the unit to when it is loaded out of the unit.

[0088] Fig. 10 is a cross-sectional view schematically showing the configuration of a film formation unit that forms a hydrophobic film on the back surface of a wafer W and forms a hydrophobic film on the front surface of the wafer W. Fig. 11 is a bottom view of a lid portion of an upper member, which will be described later. The film formation unit 31A in Fig. 10 has a processing vessel TS that accommodates a wafer W and forms a processing space S. The processing vessel TS includes, for example, a lower member 301 and an upper member 302.

[0089] The lower member 301 includes a disk-shaped heating plate 310 having a radius larger than that of the wafer W, and a flat cylindrical exterior part 311 that surrounds the heating plate 310 except for its upper surface.

[0090] A heater 312 made of a resistance heating element is provided within the hot plate 310. The heater 312 is divided into a plurality of concentric circles centered on the center of the hot plate 310, for example, so that the surface of the hot plate 310 can be heated with high uniformity. In Fig. 10, the heater 312 is shown as being divided into two for convenience of illustration.

[0091] On the surface of the hot plate 310, a plurality of gap pins 313 (e.g., eight) are provided along a circle whose center is the center of the hot plate 310 and whose radius is shorter than the radius of the wafer W. The height of each gap pin 313 is set to, for example, 0.1 mm from the surface of the hot plate 310.

[0092] Three lift pins 314 are provided in the circumferential direction of the hot plate 310, penetrating the hot plate 310, closer to the center than the gap pins 313, along a circle centered at the center of the hot plate 310. The three lift pins 314 are connected to a lift mechanism 316 via a lift member 315. The lift mechanism 316 has a drive source (not shown), such as a motor, that generates a drive force for raising and lowering the lift pins 314.

[0093] The upper member 302 has a flat, cylindrical lid portion 321 that covers the space above the lower member 301. The lower surface of a peripheral wall portion 322 of the lid portion 321 is formed so as to be able to come close to the upper surface of the outer periphery of the exterior portion 311. The lid portion 321 is configured to be able to be raised and lowered between a first position and a second position by the lifting mechanism 303. The first position is a position where the lower surface of the peripheral wall portion 322 of the lid portion 321 comes close to the upper surface of the outer periphery of the exterior portion 311, and the second position is a position where the wafer W is transferred between the transfer unit 51 and the lifting pins 314. When the lid portion 321 is lowered to the first position, a processing space S is formed between the lid portion 321 and the lower member 301. Specifically, when the lid portion 321 is lowered to the first position, the processing space S is formed between the lid portion 321 and the peripheral wall portion 322 and the heating plate 310.

[0094] The ceiling portion 323 of the lid portion 321 has a first supply port 331 that supplies a first gas to the wafer W from above the wafer W in the processing vessel TS. The first supply port 331 selectively supplies a hydrophobic gas such as HMDS gas or an inert gas such as nitrogen gas as the first gas, and opens to the processing space S.

[0095] The first supply port 331 includes, for example, a central supply port 332 and a peripheral supply port 333. The central supply port 332 is formed at a position opposite to a second supply port 341 (described later) across the wafer W in the processing vessel TS. Specifically, the central supply port 332 is formed at a position opposite to the center of the hot plate 310 in the ceiling portion 323 of the lid portion 321. The peripheral supply port 333 is formed at the following position. That is, as described later, the processing vessel TS is configured to be able to be evacuated from an exhaust position outside the wafer W in the processing vessel TS, and the peripheral supply port 333 is formed between the central supply port 332 and the outer exhaust position. Specifically, the peripheral supply port 333 is formed at a position in the ceiling portion 323 of the lid portion 321 between the central supply port 332 and an upper peripheral exhaust port 351 (described later).

[0096] The ceiling portion 323 of the lid portion 321 further has a central supply passage 334 extending from the central supply port 332 and a peripheral supply passage 335 extending from the peripheral supply port 333 .

[0097] A supply mechanism (not shown) for HMDS gas as a hydrophobizing gas is connected to the central supply path 334. The HMDS gas is, for example, a mixed gas of HMDS vapor or mist and a carrier gas such as nitrogen gas. A supply mechanism (not shown) for an inert gas is also connected to the central supply path 334.

[0098] A supply mechanism (not shown) for HMDS gas as a hydrophobizing gas is connected to the peripheral supply path 335. In addition, a supply mechanism (not shown) for an inert gas is connected to the peripheral supply path 335.

[0099] 11 , the outer peripheral supply port 333 is provided, for example, in a circular ring shape on the periphery of the ceiling portion 323. That is, a plurality of (for example, 100 or more) outer peripheral supply ports 333 are provided, for example, along the circumferential direction of the wafer W accommodated in the processing vessel TS.

[0100] 10 , the hot plate 310 has a second supply port 341 that supplies a second gas to the wafer W from a position below the wafer W in the processing container TS facing the central region of the wafer W. The second supply port 341 selectively supplies an inert gas such as HMDS gas or nitrogen gas as a source gas for the hydrophobic film, and opens to the processing space S. Note that the second supply port 341 may supply only the source gas for the hydrophobic film without supplying an inert gas.

[0101] The second supply port 341 is formed at a position facing the central region of the wafer W in the processing container TS in the heating plate 310. The heating plate 310 further includes a supply path 342 extending from the second supply port 341.

[0102] A supply mechanism (not shown) for HMDS gas, which is a raw material gas for the friction-reducing film, is connected to the supply path 342. In addition, a supply mechanism (not shown) for an inert gas is also connected to the supply path 342.

[0103] Furthermore, the processing vessel TS is configured so that it can be evacuated from an exhaust position outside the processing vessel TS relative to the wafer W. Specifically, the processing vessel TS has an upper peripheral exhaust port 351. The processing vessel TS may also have a side exhaust port 352.

[0104] The upper peripheral exhaust port 351 is provided above and outside the wafer W in the processing vessel TS and opens into the processing space S. Specifically, the upper peripheral exhaust port 351 is provided, for example, in a circular ring shape on the periphery of the ceiling portion 323. More specifically, as shown in FIG. 11 , a plurality of upper peripheral exhaust ports 351 (for example, 100 or more) are provided on the periphery of the ceiling portion 323 along the circumferential direction of the wafer W accommodated in the processing vessel TS.

[0105] 10, the ceiling portion 323 of the lid portion 321 has an exhaust path 361 extending from the upper peripheral exhaust port 351. An exhaust mechanism (not shown) including an exhaust device such as a vacuum pump is connected to the exhaust path 361.

[0106] The side exhaust port 352 is formed on a side of the wafer W in the processing vessel TS and below the upper peripheral exhaust port 351 so as to open into the processing space S. The side exhaust port 352 is formed in a ring shape by, for example, the inner lower surface of the peripheral wall portion 322 of the lid portion 321 and the inner upper surface of the outer periphery of the exterior portion 311. The side exhaust port 352 communicates with an exhaust path 372 provided on the outer periphery of the exterior portion 311 via, for example, an opening 371 provided on the upper surface of the outer periphery of the exterior portion 311. For example, a plurality of openings 371 and a plurality of exhaust paths 372 are arranged along the circumferential direction of the exterior portion 311. Each exhaust path 372 is connected to an exhaust mechanism (not shown) including an exhaust device such as a vacuum pump. When the processing space S is exhausted through the side exhaust port 352 and the exhaust path 372, the atmosphere outside the processing vessel TS is also sucked into the exhaust path 372.

[0107] An upwardly recessed recess 381 is formed in a portion of the lower surface of the peripheral wall 322 of the lid 321 facing the opening 371. The recess 381 constitutes a buffer space for uniformly exhausting the processing space S in the circumferential direction via the side exhaust ports 352.

[0108] Next, an example of a processing sequence performed by the film forming unit 31A will be described. Fig. 12 is a diagram showing the state of the processing vessel TS when the processing sequence of this example is being performed. Note that Fig. 12 does not show the lift pins 314 and the gap pins 313. Furthermore, Fig. 12 shows the flow of the hydrophobization gas in the processing space S with solid arrows.

[0109] (Loading) First, the wafer W is loaded into the processing vessel TS. Specifically, the transfer unit 51 moves the wafer W between the lid 321, which has been raised to the second position described above, and the hot plate 310. Thereafter, the lift pins 314 are raised, whereby the wafer W is transferred from the transfer unit 51 to the lift pins 314 and moved to the transfer position. Thereafter, the transfer unit 51 is retracted from the processing vessel TS. In addition, the lid 321 is lowered to the first position described above, and the processing space S is formed by the lid 321 and the lower member 301.

[0110] (Gas Supply) Next, HMDS gas is supplied to the front surface and the back surface of the wafer W. Specifically, these HMDS gas supplies are performed simultaneously. More specifically, the wafer W supported by the lift pins 314 is moved to an upper processing position above the gap pins 313. The upper processing position is a position spaced apart from the front surface of the hot plate 310 and the tops of the gap pins 313, e.g., 2 mm from the front surface of the hot plate 310. In this state, as shown in FIG. 12 , a hydrophobizing gas is supplied from the central supply port 332 toward the center of the front surface of the wafer W, and a hydrophobizing gas is supplied from the second supply port 341 toward the center of the back surface of the wafer W. Note that no gas is supplied from the peripheral supply port 333. Furthermore, the processing space S is evacuated via the upper peripheral exhaust port 351 and the side exhaust port 352.

[0111] As a result, the HMDS gas from the central supply port 332 flows from the center of the wafer W toward the outside along the front surface of the wafer W, and the HMDS gas from the second supply port 341 flows from the center of the wafer W toward the outside along the back surface of the wafer W. As a result, a hydrophobic film is formed on the entire front surface of the wafer W, and a hydrophobic film serving as a friction-reducing film is formed on the entire back surface.

[0112] In this process, exhaust through the upper peripheral exhaust port 351 and exhaust through the side exhaust port 352 are performed so that gas containing, for example, HMDS gas does not leak out of the processing vessel TS and the atmosphere outside the processing vessel TS does not flow into the processing space S. Furthermore, in this process, exhaust through the exhaust path 372 is performed so that the atmosphere outside the processing vessel TS is also sucked into the exhaust path 372 together with the gas in the processing space S. This makes it possible to prevent the gas in the processing space S from leaking out of the processing vessel TS.

[0113] (Heat Treatment) Next, the front and rear surfaces of the wafer W are heat-treated. Specifically, these heat treatments are performed simultaneously. More specifically, the supply of HMDS gas from the central supply port 332 toward the center of the front surface of the wafer W and the supply of HMDS gas from the second supply port 341 toward the center of the rear surface of the wafer W are stopped. At the same time, the lift pins 314 are lowered, and the wafer W is placed on the heating plate 310, that is, transferred from the lift pins 314 to the gap pins 313. This heats the wafer W, and the hydrophobic films formed on the front and rear surfaces of the wafer W are heat-treated at a relatively high temperature, promoting chemical adsorption of the constituent molecules of the hydrophobic film to the front and rear surfaces of the wafer W.

[0114] In this step, evacuation of the processing space S via the upper peripheral exhaust port 351 and the side exhaust port 352 continues from the previous step. No inert gas is supplied from the central supply port 332 and the second supply port 341, and no gas is supplied from the peripheral supply port 333.

[0115] In this step, the HMDS gas or the inert gas is not supplied to the rear surface of the wafer W from the second supply port 341 , so that the wafer W can be prevented from floating from the heating plate 310 .

[0116] (Atmosphere Replacement) Next, the atmosphere in the processing vessel TS is replaced with an inert gas. Specifically, the lift pins 314 are raised, and the wafer W is transferred from the hot plate 310 to the lift pins 314 and moved to a replacement position above the gap pins 313. The replacement position may be the same as the upper processing position described above. In this state, an inert gas is supplied from the central supply port 332 toward the center of the front surface of the wafer W, and from the second supply port 341 toward the center of the back surface of the wafer W. Note that in this example, an inert gas is not supplied from the peripheral supply port 333, but may be supplied. Furthermore, evacuation of the processing space S via the upper peripheral exhaust port 351 and the side exhaust port 352 continues from the previous step.

[0117] As a result, the HMDS gas in the processing space S is replaced with the inert gas. During this replacement, if the wafer W is moved to the replacement position and separated from the heating plate 310 (specifically, from the gap pin 313) as described above, it is possible to prevent the HMDS gas near the back surface of the wafer W from remaining in the processing vessel TS during the replacement.

[0118] (Unloading) Then, the wafer W is unloaded from the processing vessel TS. Specifically, for example, the supply of inert gas from the central supply port 332 toward the center of the front surface of the wafer W and the supply of inert gas from the second supply port 341 toward the center of the back surface of the wafer W are stopped. Then, the exhaust of the processing space S through the upper peripheral exhaust port 351 and the exhaust of the processing space S through the side exhaust port 352 are also stopped. Next, the lid 321 is lifted to the second position described above, and the lift pins 314 are lifted. The wafer W, supported by the lift pins 314, is lifted to the transfer position. Next, the transfer unit 51 is inserted into the processing vessel TS between the lid 321 and the hot plate 310, and the lift pins 314 are lowered, and the wafer W is transferred to the transfer unit 51. Then, the transfer unit 51 is retracted from the processing vessel TS, and the wafer W is unloaded from the processing vessel TS.

[0119] In this example, HMDS gas is supplied to the front surface of the wafer W and the rear surface of the wafer W simultaneously, but these may be supplied sequentially. In this case, HMDS gas may be supplied from the rear surface to the front surface, or from the front surface to the rear surface.

[0120] 10 is used, in the rear surface processing apparatus 2, after rear surface cleaning is performed by the rear surface cleaning unit 41, a friction-reducing film is formed on the rear surface of the wafer W and a hydrophobic film is formed on the front surface, and then the temperature of the wafer W is adjusted (specifically, cooled). Next, in the coating and developing apparatus 3, processes from resist film formation to development are performed. Then, the friction-reducing film on the rear surface of the wafer W is removed in the rear surface processing apparatus.

[0121] <Film Forming Unit 31> Here, the configuration of the aforementioned film forming unit 31 that forms a hydrophobic film only on the back surface of the wafer W will also be described. Figure 13 is a cross-sectional view that schematically shows an outline of the configuration of the film forming unit 31 that forms a hydrophobic film on the back surface of the wafer W and on the front surface of the wafer W, but does not form a hydrophobic film on the front surface of the wafer W. The film forming unit 31A in Figure 13 has a processing vessel TSB that accommodates the wafer W and forms a processing space S. The processing vessel TSB includes, for example, a lower member 301B and an upper member 302B.

[0122] The lower member 301B includes a disk-shaped heat plate 310 and a flat cylindrical exterior part 311B that surrounds the heat plate 310 except for the upper surface.

[0123] The hot plate 310 has the above-mentioned second supply port 341. The second supply port 341 supplies at least HMDS gas as a raw material gas for the hydrophobic film.

[0124] The upper member 302B will be described below, focusing on the differences from the upper member 302 in FIG.

[0125] The upper member 302B includes a flat, cylindrical lid portion 321B that covers the space above the lower member 301B, and the lower surface of a peripheral wall portion 322 of the lid portion 321B is formed to overlap the upper surface of the exterior portion 311B. The lid portion 321B is configured to be able to be raised and lowered by the lifting mechanism 303 between a first position where the lid portion 321B overlaps the lower member 301B and a second position where the wafer W is transferred between the transfer unit 51 and the lifting pins 314. The outer lower surface of the peripheral wall portion 322 of the lid portion 321B, i.e., the lower surface outside the exhaust path 382 described below, comes into close contact with the upper surface of the exterior portion 311B, thereby forming a processing space S between the lid portion 321B and the exterior portion 311B.

[0126] 10 , the first supply port 331B formed in the ceiling portion 323B of the lid portion 321B of the upper member 302B can supply only an inert gas as the first gas, and no hydrophobizing gas can be supplied from the first supply port 331B. Specifically, the first supply port 331B includes, for example, a central supply port 332B and a peripheral supply port 333B, and the central supply port 332B and the peripheral supply port 333B are configured to be able to supply only an inert gas such as nitrogen gas, without supplying a hydrophobizing gas such as HMDS gas.

[0127] 10. Furthermore, unlike the lid portion 321 of the upper member 302 shown in FIG. 10, the lid portion 321B of the upper member 302B is not provided with an upper peripheral exhaust port 351 or an exhaust path 361.

[0128] Furthermore, unlike the upper member 302 of FIG. 10 , the upper member 302B has a peripheral wall 322B of the lid 321B, with multiple exhaust channels 382 extending vertically along the circumferential direction of the lid 321B. As described above, the lower surface of the peripheral wall 322B outside the exhaust channels 382 is in close contact with the upper surface of the exterior part 311B, while the lower surface of the peripheral wall 322B inside the exhaust channels 382 is not in close contact with the upper surface of the exterior part 311B. That is, the lower surface of the peripheral wall 322B inside the exhaust channels 382 is higher in height than the lower surface outside. As a result, an annular exhaust port 383 communicating with the exhaust channels 382 is formed between the lower surface of the peripheral wall 322B inside the exhaust channels 382 and the upper surface of the exterior part 311B. The exhaust port 383 constitutes an exhaust section for exhausting the processing space S.

[0129] An exhaust chamber 384 formed in a ring shape along the circumferential direction is provided on the peripheral portion of the upper surface of the lid portion 321B, and the exhaust path 382 is in communication with this exhaust chamber 384. A plurality of exhaust pipes 385 are connected to the exhaust chamber 384 along the circumferential direction, and the downstream ends of the exhaust pipes 385 are connected to an exhaust duct (not shown) to which the exhaust paths of each section in a factory are commonly connected, for example.

[0130] 10, the exterior part 311B of the lower member 301B is not provided with the opening 371 and the exhaust path 372. However, the exterior part 311B of the lower member 301B may be provided with the opening 371 and the exhaust path 372, and the processing space S may be exhausted via the opening 371 and the exhaust path 372. In this case, the exhaust path 382 of the upper member 302B may be omitted.

[0131] <Light Irradiation Unit 33> The configuration of the light irradiation unit 33 will be described below. FIG.

[0132] The light irradiation unit 33 is provided in an atmospheric environment, and the wafer W is transported to the light irradiation unit 33 by the transport unit 52. As described above, the light irradiation unit 33 irradiates the rear surface of the wafer W with light to remove the friction-reducing film formed on the rear surface. Specifically, the light irradiation unit 33 removes the friction-reducing film formed on the entire rear surface of the wafer W by irradiating the entire rear surface of the wafer W with light. The light irradiated by the light irradiation unit 33 includes ultraviolet light having a wavelength of 10 nm to 200 nm (i.e., vacuum ultraviolet light), and specifically, ultraviolet light having a peak wavelength of, for example, 172 nm.

[0133] Furthermore, the light activates oxygen in the atmosphere, generating ozone gas on the backside of the wafer W. The friction-reducing film is decomposed and removed not only by receiving light energy but also by the chemical action of the remaining gas. The light irradiation unit 33 is configured to prevent the irradiation light and O gas from reaching the front side of the wafer W, so that the films formed on the front side of the wafer W are prevented from being damaged or removed by the irradiation light and ozone gas.

[0134] Furthermore, the light irradiation unit 33 changes the holding position of a member that holds the back surface of the wafer W in order to irradiate the entire back surface of the wafer W. The light irradiation unit 33 is configured so that light irradiation is performed both before and after this position change.

[0135] 14, the light irradiation unit 33 has a rectangular, horizontally elongated housing 400. One side of the housing 400 is provided with a loading / unloading port 401 for the wafer W and a shutter 402 for opening and closing the loading / unloading port 401. In the following description, the side facing the loading / unloading port 401 is referred to as the front side, and the side facing the loading / unloading port 401 is referred to as the back side.

[0136] The interior of the housing 400 is divided into an upper space 404 and a lower space 405 by a partition plate 403, and the loading / unloading port 401 opens into the upper space 404. A spin chuck 421, a light irradiation module 431, and a wafer holding module 441 are provided in the upper space 404.

[0137] The spin chuck 421 mediates the transfer of the wafer W between the transfer unit 52 and the wafer holding module 441, and also serves to change the orientation of the wafer W so that the wafer holding module 441 can hold different positions on the backside of the wafer W. The light irradiation module 431 irradiates light upward. To irradiate the backside of the wafer W with light, the wafer holding module 441 locally holds the backside and passes the wafer W over the light irradiation module 431.

[0138] The spin chuck 421 is formed, for example, in a circular shape in a plan view and is provided on the front side of the upper space 404 (the negative side in the X direction in the figure). The upper surface of the spin chuck 421 is configured as a horizontal mounting surface for the wafer W, and is provided with a suction port (not shown) that holds the wafer W horizontally by sucking the center of the backside of the wafer W. The lower part of the spin chuck 421 is connected to a rotation mechanism 422. The lower part of the rotation mechanism 422 is located in the lower space 405 and is supported from below by a support base 423.

[0139] The rotation mechanism 422, which constitutes a relative rotation mechanism, rotates the spin chuck 421 around a vertical axis, with its central axis serving as the rotation axis. This allows the orientation of the wafer W placed on the spin chuck 421 to be changed. The spin chuck 421, the rotation mechanism 422, and a moving mechanism 442 (described later) constitute a holding position changing mechanism that changes the position at which the back surface of the wafer W is held.

[0140] The light irradiation module 431 is formed, for example, in the shape of a rectangular block, and is provided at the back side of the upper space 404 (the positive side in the X direction in the figure). An ultraviolet lamp 432 is provided inside the light irradiation module 431. A window 433 is provided above the ultraviolet lamp 432 in the light irradiation module 431. Light of the aforementioned wavelength irradiated from the ultraviolet lamp 432 passes through the window 433 and travels toward above the light irradiation module 431.

[0141] The window portion 433 is formed to have a size that allows light to be irradiated over the entire width direction (Y direction in the figure) of the wafer W. The center of the spin chuck 421 and the center of the window portion 433 in the width direction (Y direction in the figure) are aligned in the depth direction (X direction in the figure).

[0142] A gas discharge port 424 extending in the width direction (Y direction in the figure) is formed on the front side (negative side in the X direction in the figure) of the upper surface of the light irradiation module 431. The gas discharge port 424 may be formed to open obliquely upward toward the rear side (positive side in the X direction in the figure). A supply mechanism (not shown) for nitrogen gas, which is an inert gas, is connected to the gas discharge port 424. The nitrogen gas discharged from the gas discharge port 424 forms an airflow over the window portion 433 toward the rear side (positive side in the X direction in the figure), purging the atmosphere toward the rear side of the housing 400. This nitrogen gas flows toward the rear side between the back surface of the wafer W and the window portion 433 during light irradiation of the wafer W. This reduces the oxygen concentration on the back surface of the wafer W during light irradiation.

[0143] A horizontal plate 451 is provided extending from the upper edge of the rear side (positive side in the X direction in the figure) of the light irradiation module 431 toward the rear side wall of the housing 400. An exhaust port 452 is provided on the rear side wall of the housing 400 so as to face the space above the plate 451. Exhaust flow path forming units 453, 454, and 455 are attached in this order from the top to the outside of the rear side wall of the housing 400. Each of the exhaust flow path forming units 453 to 455 has an exhaust flow path connected to an exhaust source (not shown). The exhaust port 452 is connected to the exhaust flow path provided in the exhaust flow path forming unit 453. Therefore, nitrogen gas discharged from the gas discharge port 434 is guided by the plate 451 and flows through the upper space 404 toward the rear side (positive side in the X direction in the figure) and is discharged from the exhaust port 452.

[0144] A lighting power supply 435 is provided in a region extending from the center of the lower space 405 in the depth direction (X direction in the figure) to the rear side (positive side in the X direction in the figure). The lighting power supply 435 supplies power to the ultraviolet lamp 432 via a cable 436. A fan 437 for cooling the lighting power supply 435 is provided on the rear side (positive side in the X direction in the figure) of the lighting power supply 435. The exhaust flow path forming portion 454 described above is provided at the same height as the fan 437, and the airflow generated by the fan 437 flows into the exhaust flow path of the exhaust flow path forming portion 454 through an opening in the side wall on the rear side (positive side in the X direction in the figure) of the housing 400.

[0145] An exhaust port 456 is provided in the rear side wall of the housing 400, and the exhaust port 456 is connected to the exhaust flow path of the exhaust flow path forming part 455. Therefore, particles generated from each part of the wafer holding module 441 provided in the lower space 405 are removed by riding on the exhaust flow toward the exhaust port 456. Note that a slit 406 that connects the upper space 404 and the lower space 405 is formed in the partition plate 403, and air from the upper space 404 is also exhausted by the exhaust port 456 through the slit 406. The slit 406 is provided at one end of the partition plate 403 in the width direction (the Y direction in the figure) so as to extend in the depth direction (the X direction in the figure).

[0146] The wafer holding module 441 is equipped with a moving mechanism 442 provided in the lower space 405 and a wafer transport unit 443 provided in the upper space 404, and the moving mechanism 442 enables the wafer transport unit 443 to move in the depth direction (X direction in the figure) and to be raised and lowered.

[0147] The movement mechanism 442 includes a slider 461, an elevating mechanism 462, and a horizontal movement mechanism 463. The horizontal movement mechanism 463 is a long and slender mechanism extending in the depth direction (X direction in the figure), and is disposed in an area closer to the end in the width direction (Y direction in the figure) than the lighting power source 435. The horizontal movement mechanism 463 includes a ball screw and guide rails that each extend in the width direction (Y direction in the figure) and are each connected to the slider 461, and a motor. Rotation of the ball screw by the motor moves the slider 461 along the guide rail in the depth direction (X direction in the figure).

[0148] The lifting mechanism 462 is provided on the slider 461. The lifting mechanism 462 is composed of a motor 464 and a support part 465. The support part 465 includes a ball screw and a guide rail that each extend along a vertical axis. The support part 465 protrudes into the upper space 404 via a slit 406, and the wafer transport part 443 is connected to the upper space 404.

[0149] The wafer transport section 443 includes a moving plate 471 and a holding ring 472 .

[0150] The movable plate 471 is a horizontal plate formed in a square shape in a plan view, and has a circular opening in a plan view. The ball screw and guide rails that form the support part 465 of the above-mentioned moving mechanism 442 are connected to the outside of the opening in the movable plate 471. When the ball screw is rotated by the motor 464, the wafer transport part 443 moves up and down in the vertical direction along the guide rail.

[0151] The retaining ring 472 is supported on the inner peripheral edge of the opening of the moving plate 471. It is a member having a circular ring shape in a plan view. A wafer holder (not shown) for holding the backside of the wafer W is provided along the inner periphery of the retaining ring 472.

[0152] In the width direction (Y direction in the figure), the center of the holding ring 472 coincides with the center of the spin chuck 421. The wafer transport unit 443 can be moved in the depth direction by the moving mechanism 442 between a position where the center of the holding ring 472 and the center of the spin chuck 421 coincide (transfer position) and a position where the center of the holding ring 472 is located further back than the window portion 433 (positive side in the Y direction in the figure).

[0153] Light-shielding plates 473 extend from the lower end of the inner peripheral surface of the holding ring 472 from four circumferentially spaced regions toward the center of the holding ring 472. The light-shielding plates 473 are components for preventing light and ozone gas from penetrating toward the front side of the wafer W, as described above. The light-shielding plates 473 are positioned at a height lower than the rear surface of the wafer W held by the holding ring 472. Each light-shielding plate 473 is arc-shaped in a plan view. Wafer holders (not shown) protrude toward the center of the holding ring 472 from each region of the lower end of the holding ring 472 where the light-shielding plates 473 are not provided. The light irradiation unit 33 irradiates the rear surface of the wafer W with light while moving the holding ring 472 in the depth direction (X direction in the figure). The wafer holders are positioned to minimize the blocking of light irradiation during this light irradiation. Each wafer holder is configured to be able to hold the backside of the wafer W by suction.

[0154] The wafer transfer unit 443 can be raised and lowered in the upper space 404 by the moving mechanism 442. More specifically, the wafer transfer unit 443 can be moved between a lower height below the spin chuck 421 and an upper height above the window 433 of the light irradiation module 431 so that the wafer W can be irradiated with light by moving in the depth direction (X direction in the figure) and the wafer W can be transferred to and from the spin chuck 421.

[0155] In addition, the light shielding plate 473 is positioned below and away from the back surface of the wafer W so as to prevent light from circulating (diffracting) onto the surface of the wafer W held in the wafer holding portion while not interfering with light irradiation of the peripheral edge of the back surface of the wafer W.

[0156] In order to more reliably prevent the ozone gas from leaking around, the retaining ring 472 may be configured to eject an inert gas such as nitrogen gas as a purge gas toward the peripheral edge of the wafer W (specifically, toward the gap formed between the wafer W, the light shielding plate 473, and the inner surface of the retaining ring 472).

[0157] (Second embodiment) <Rear surface processing apparatus> Fig. 15 is a plan view schematically showing the outline of the configuration of a rear surface processing apparatus according to a second embodiment. Fig. 16 is a diagram showing the outline of the internal configuration of a rear side in the depth direction (positive side in the X direction) of the rear surface processing apparatus in Fig. 15. Fig. 17 is a diagram showing the outline of the internal configuration of a front side in the depth direction (negative side in the X direction) of the rear surface processing apparatus in Fig. 15. Fig. 18 is a diagram showing the outline of the internal configuration of a central part in the depth direction (X direction) of the rear surface processing apparatus in Fig. 15.

[0158] The rear surface processing apparatus according to the second embodiment illustrated in FIGS. 15 to 18 will be described, focusing on the differences from the rear surface processing apparatus 2 shown in FIGS.

[0159] The processing station 11 of the rear surface processing apparatus 2 shown in Figure 2 and elsewhere has three stacked processing blocks BL, each equipped with a plurality of film forming units 31 and a plurality of temperature adjustment units 32, and the three processing blocks BL are adjacent to one another. In contrast, the processing station 11A of the rear surface processing apparatus 2A shown in Figures 15 to 18 also has three stacked processing blocks BL1, each equipped with a plurality of film forming units 31 and a plurality of temperature adjustment units 32. However, the three processing blocks BL1 are not adjacent to one another, and other processing blocks BL2 are provided between the lower and middle processing blocks BL1 and between the middle and upper processing blocks BL1. A processing block BL2 is also provided above the upper processing block BL1.

[0160] As shown in FIG. 16 , in the first region R1 of each processing block BL1, a film formation unit 31 and a temperature adjustment unit 32 are stacked in this order from the top. Furthermore, in the first region R1 of each processing block BL1, only one layer is provided, in which three film formation units 31 and three temperature adjustment units 32 are arranged in the width direction (Y direction in the figure). One of the three film formation units 31 arranged in the width direction (Y direction in the figure) in each processing block BL1 may be replaced with a waiting buffer on which a wafer W is temporarily placed. Furthermore, one of the three temperature adjustment units 32 arranged in the width direction (Y direction in the figure) in each processing block BL1 may be replaced with a film formation unit 31. As shown in FIG. 17 , in the second region R2 of each processing block BL1, only one layer is provided, in which two back surface cleaning units 41 are arranged in the width direction (Y direction in the figure). As shown in FIG. 18, a transport unit 51 is provided in the transport region Rt of each processing block BL1.

[0161] The configuration of each processing block BL2 is as follows. As shown in FIG. 16 , a light irradiation unit 33 is provided in a third region R3 above the first region R1 in the processing block BL2. Specifically, for example, the third region R3 of the processing block BL2 includes only one layer in which three light irradiation units 33 are arranged in the width direction (Y direction in the figure). Furthermore, as shown in FIG. 17 , a fourth region R4 above the second region R2 in the processing block BL2 includes multiple back surface cleaning units 41, similar to the second region R2. Specifically, for example, the fourth region R4 of the processing block BL2 includes only one layer in which two back surface cleaning units 41 are arranged in the width direction (Y direction in the figure). Furthermore, as shown in FIG. 18 , a transport unit 51 is provided in a region RtA above the transfer region Rt in the processing block BL2, similar to the transfer region Rt.

[0162] 15, the carrier station 10A of the back surface processing apparatus 2A is different from the carrier station 10 of the back surface processing apparatus 2 in that it is provided with a first transfer unit 22A1 and a second transfer unit 22A2 as transfer units that transfer wafers W between the carrier C and the delivery unit 61. The first transfer unit 22A1 and the second transfer unit 22A2 are arranged side by side in the depth direction.

[0163] The first transfer unit 22A1 is an example of a first transfer mechanism that transfers wafers W to be loaded into the processing blocks BL1 and BL2. Specifically, the first transfer mechanism transfers wafers W to be loaded into the processing blocks BL1 and BL2 within the carrier station 10A. The second transfer unit 22A2 is an example of a second transfer mechanism that transfers wafers W unloaded from the processing blocks BL1 and BL2 within the carrier station 10A. The first transfer unit 22A1 and the second transfer unit 22A2 have different accessible mounting plates 21.

[0164] In addition, in the rear surface processing apparatus 2A, the transfer unit 61 of the transfer tower 12 places the wafer W when the wafer W is transferred between the processing block BL1 and the carrier station 10A, and also places the wafer W when the wafer W is transferred between the processing block BL2 and the carrier station 10A.

[0165] When the backside processing apparatus 2A is used, for example, the carrier C is placed on the mounting plate 21 accessible by the first transfer unit 22A1. Then, all wafers W housed in the carrier C are sequentially transferred by the first transfer unit 22A1 to the transfer unit 61 of the transfer tower 12. The emptied carrier C is transferred by a carrier transfer mechanism (not shown) and placed on the mounting plate 21 accessible by the second transfer unit 22A2. The carrier transfer mechanism may be provided in the backside processing apparatus 2A or may be an OHT. The wafers W processed in the processing blocks BL1 and BL2 of the backside processing apparatus 2A are returned to the carrier C on the mounting plate 21 from the transfer unit 61 of the transfer tower 12 by the second transfer unit 22A2.

[0166] The carrier station 10A may be provided with a buffer unit 15 accessible by both the first transfer unit 22A and the second transfer unit 22A2. The buffer unit 15 is provided, for example, at a position adjacent to the transfer tower 12 in the width direction (Y direction in the figure), specifically, above that position. The buffer unit 15 is provided with, for example, an inspection unit similar to the inspection unit 71. This allows the transfer of wafers W to the inspection unit for inspecting the state of the wafers W before and after a predetermined process without using the transfer unit 51, and allows the first transfer unit 22A and the second transfer unit 22A2 to be used separately before and after the process. This improves the throughput of the series of processes, including the above-described inspection.

[0167] The buffer section 15 may be provided with one or more transfer units.

[0168] (Third embodiment) <Rear surface processing apparatus> Fig. 19 is a plan view schematically showing the outline of the configuration of a rear surface processing apparatus according to a third embodiment. Fig. 20 is a view showing the outline of the internal configuration of the center part in the depth direction (X direction) of the rear surface processing apparatus of Fig. 19 .

[0169] The rear surface processing apparatus according to the third embodiment illustrated in FIGS. 19 and 20 will be described, focusing on the differences from the rear surface processing apparatus 2 shown in FIGS.

[0170] 19 and 20, like the processing station 11 of the back surface processing apparatus 2 shown in Fig. 2 etc., the processing station 11B of the back surface processing apparatus 2B has three stacked processing blocks BL, each of which is provided with a plurality of film formation units 31 and a plurality of temperature adjustment units 32, and the three processing blocks BL are adjacent to each other. However, unlike the processing station 11 of the back surface processing apparatus 2 shown in Fig. 2 etc., the processing station 11B of the back surface processing apparatus 2B does not have a transfer tower 12B. In the back surface processing apparatus 2B, the transfer tower 12B is provided in the carrier station 10B.

[0171] Furthermore, at least some of the transfer units 61 in the transfer tower 12B are configured to be capable of controlling the temperature of the wafer W. Specifically, for example, the transfer tower 12B has, for each processing block BL, a plurality of transfer units 61 at the same height as the processing block BL, and some of the plurality of transfer units 61 corresponding to each processing block BL are configured to be capable of controlling the temperature of the wafer W. Note that, hereinafter, among the transfer units 61, those configured to be capable of controlling the temperature of the wafer W may be referred to as transfer units SCPL, and the others may be referred to as transfer units TRS.

[0172] 2 and the like, the carrier station 10B of the backside processing apparatus 2B is provided with a first transfer unit 22B1 and a second transfer unit 22B2 as transfer units that transfer wafers W between the carrier C and the transfer unit 61 of the transfer tower 12B. In the carrier station 10B, the transfer tower 12B is provided in the center in the depth direction (X direction in FIG. 19 and the like), the first transfer unit 22B1 is provided on the near side in the depth direction (negative side in the X direction in FIG. 19 and the like) of the transfer tower 12B, and the second transfer unit 22B2 is provided on the far side in the depth direction (positive side in the X direction in FIG. 19 and the like) of the transfer tower 12B.

[0173] Specifically, the first transfer unit 22B1 transfers wafers W between a carrier C placed on a mounting plate 21 located closer to the transfer tower 12B in the depth direction (negative side in the X direction in FIG. 19 , etc.) and a transfer unit TRS in the transfer tower 12B. Specifically, the second transfer unit 22B2 transfers wafers W between a carrier C placed on a mounting plate 21 located closer to the transfer tower 12B in the depth direction (positive side in the X direction in FIG. 19 , etc.) and a transfer unit TRS in the transfer tower 12B.

[0174] When the backside processing apparatus 2B is used, similarly to the case where the backside processing apparatus 2A shown in FIG. 15 etc. is used, for example, the carrier C is placed on the mounting plate 21 accessible by the first transfer unit 22B1. Then, all wafers W housed in the carrier C are sequentially transferred by the first transfer unit 22B1 to the transfer unit TRS of the transfer tower 12. The emptied carrier C is transferred by a carrier transfer mechanism (not shown) and placed on the mounting plate 21 accessible by the second transfer unit 22B2. The carrier transfer mechanism may be provided in the backside processing apparatus 2B or may be an OHT. The wafer W processed in the processing block BL1 of the backside processing apparatus 2B is returned to the carrier C on the mounting plate 21 from the transfer unit TRS of the transfer tower 12 by the second transfer unit 22B2.

[0175] In the backside processing apparatus 2B, the transfer region Rt in each processing block BL is under positive pressure relative to the second region R2 in which the backside cleaning unit 41 is provided. Specifically, in the backside processing apparatus 2B, the pressure in the transfer region Rt in each processing block BL is 0.3 Pa or more higher than the pressure in the second region R2 in which the backside cleaning unit 41 is provided. This allows an airflow from the transfer region Rt to flow into the second region R2, thereby preventing particles in the second region R2 in which the backside cleaning unit 41 is provided (e.g., particles generated from the wafer W or module before or during cleaning by the backside cleaning unit 41) from leaking into the transfer region Rt. Furthermore, the airflow from the transfer region Rt to the second region R2 prevents particles leaking from the second region R2 into the transfer region Rt from entering the first region R1.

[0176] Furthermore, in the backside processing apparatus 2B, in each processing block BL, the transfer region Rt is at a positive pressure relative to the first region R1 in which the light irradiation unit 33 and the film forming unit 31 are provided. Specifically, in each processing block BL, in the backside processing apparatus 2B, the pressure in the transfer region Rt is 0.3 Pa or more higher than the pressure in the first region R1 in which the light irradiation unit 33 is provided. This allows an airflow from the transfer region Rt to flow into the first region R1, thereby preventing particles in the first region R1 in which the light irradiation unit 33 and the like are provided (e.g., particles generated from the wafer W before or during removal of the friction-reducing film by the light irradiation unit 33) from leaking into the transfer region Rt. Furthermore, the airflow from the transfer region Rt to the first region R1 prevents particles leaking from the first region R1 to the transfer region Rt from entering the second region R2.

[0177] Furthermore, in the backside processing apparatus 2B, the pressure in each transfer region Rt is positive relative to the pressure in the carrier station 10B. Specifically, in the backside processing apparatus 2B, the pressure in each transfer region Rt is 0.3 Pa or more higher than the pressure in the carrier station 10B. This creates an airflow from the transfer region Rt toward the inside of the carrier station 10B, which can prevent particles in the carrier station 10B (e.g., particles generated from the wafer W before cleaning by the backside cleaning unit 41 or from the wafer W before removal of the friction-reducing film by the light irradiation unit 33) from leaking into the transfer region Rt.

[0178] Furthermore, in each processing block BL, the transfer region Rt is under positive pressure relative to both the first region R1 and the second region R2, which has the following effects: A wafer W to be subjected to friction-reducing film formation is first transferred to the back surface cleaning unit 41 in the second region R2, but the wafer W is uncleaned at the time of transfer, resulting in low cleanliness. A wafer W to be subjected to friction-reducing film removal is first transferred to the light irradiation unit 33 in the first region R1, but the friction-reducing film, which has particles adhering to it, is not yet removed at the time of transfer, resulting in low cleanliness. By maintaining positive pressure relative to both the first region R1 and the second region R2 within the transfer region Rt, an airflow is generated from the transfer region Rt toward the first region R1 and the second region R2. Therefore, it is possible to prevent particles adhering to an uncleaned wafer W on which a friction-reducing film is to be formed from moving from the second region R2 to the first region R1 and adversely affecting a wafer W in the first region R1 that is a target for friction-reducing film removal and from which the friction-reducing film has actually been removed.It is also possible to prevent particles adhering to a wafer W that is a target for friction-reducing film removal before film removal from moving from the first region R1 to the second region R2 and adversely affecting a wafer W in the second region R2 that is a target for friction-reducing film formation and has been cleaned.

[0179] In order to realize the pressure relationship described above, at least one of an air supply mechanism that supplies air to the space to be pressure-adjusted and an exhaust mechanism that exhausts air from the space to be pressure-adjusted is connected to the transport region Rt, the first region R1, the second region R2, and the carrier station 10. At least one of the air supply mechanism and the exhaust mechanism is controlled by the control device 4.

[0180] When the backside processing apparatus 2B is used, similarly to the case where the backside processing apparatus 2A shown in FIG. 15 etc. is used, for example, the carrier C is placed on the mounting plate 21 accessible by the first transfer unit 22B1. Then, all wafers W housed in the carrier C are sequentially transferred by the first transfer unit 22B1 to the transfer unit TRS of the transfer tower 12. The emptied carrier C is transferred by a carrier transfer mechanism (not shown) and placed on the mounting plate 21 accessible by the second transfer unit 22B2. The carrier transfer mechanism may be provided in the backside processing apparatus 2B or may be an OHT. The wafer W processed in the processing block BL1 of the backside processing apparatus 2B is returned to the carrier C on the mounting plate 21 from the transfer unit TRS of the transfer tower 12 by the second transfer unit 22B2.

[0181] When the rear surface processing apparatus 2B is used, for example, the first transfer control is performed for the wafer W on which the friction reduction film is to be formed. In the first transfer control, the transfers A1 to A5 are performed in order.

[0182] A1 transport: Transport from inside the transfer unit TRS to the back surface cleaning unit 41 (specifically, transport from inside the transfer unit TR of the transfer tower 12B to the back surface cleaning unit 41 provided in the processing block BL at the same height as the transfer unit TRS). A2 transport: Transport from inside the back surface cleaning unit 41 to the film forming unit 31 (specifically, transport from inside the back surface cleaning unit 41 to the film forming unit 31 provided in the same processing block BL). A3 transport: Transport from inside the film forming unit 31 to the temperature adjustment unit 32 (specifically, transport from inside the film forming unit 31 to the temperature adjustment unit 32 provided in the same processing block BL). A4 transport: Transport from inside the temperature adjustment unit 32 to the transfer unit SCPL (specifically, transport from inside the temperature adjustment unit 32 to the transfer unit SCPL at the same height as the processing block BL in which the temperature adjustment unit 32 is provided). A5 transport: Transport from inside the transfer unit SCPL to the transfer unit TRS.

[0183] Of the two transport arms 51a of the transport unit 51, the transport arm 51a1 is used for the A1 transport, A3 transport, and A5 transport performed by the first transport control, and the transport arm 51a2 is used for the A2 transport and A4 transport.

[0184] That is, when the rear surface processing apparatus 2B is used, for example, a wafer W on which a friction-reducing film is to be formed is transported by a transport unit 51 having two transport arms 51a as follows: from a transfer unit TRS of the transfer tower 12B to a rear surface cleaning unit 41 in a processing block BL at the same height as the transfer unit TRS by the transport arm 51a1, then to a film forming unit 31 in the same processing block BL by the transport arm 51a2, then to a temperature adjustment unit 32 in the same processing block BL by the transport arm 51a1, then to a transfer unit SCPL at the same height as the processing block BL by the transport arm 51a2, then to a transfer unit TRS by the transport arm 51a1.

[0185] By performing such transportation and limiting the transport arm 51a that comes into contact with the wafer W after cleaning by the back surface cleaning unit 41 and before the formation of the friction-reducing film to the transport arm 51a2, it is possible to prevent the transport arm 51a2 from being contaminated by the back surface of the wafer W before cleaning by the back surface cleaning unit 41. As a result, it is possible to prevent the back surface of the wafer W after cleaning by the back surface cleaning unit 41 from being contaminated by the transport arm 51a before the formation of the friction-reducing film by the film forming unit 31.

[0186] Furthermore, during this transfer, the back surface cleaning unit 41, film formation unit 31, and temperature adjustment unit 32, to which the wafer W on which the friction-reducing film is to be formed is transferred, are located within the same processing block BL. Furthermore, the transfer unit SCPL to which the wafer W, whose temperature has been adjusted by the temperature adjustment unit 32 and on which the friction-reducing film has been formed, is transferred is located at the same height as the processing block BL in which the back surface cleaning unit 41, film formation unit 31, and temperature adjustment unit 32 are located, through which the wafer W has passed. This reduces the vertical movement of the transfer arm 51a, thereby improving throughput. As a result, for example, while the temperature of a wafer W is being adjusted by the temperature adjustment unit 32 or the transfer unit SCPL, another wafer W can be transferred.

[0187] Furthermore, even if the temperature adjustment by the temperature adjustment unit 32 is not complete, the temperature adjustment can be completed by the subsequent temperature adjustment by the transfer unit SCPL. Furthermore, as described above, when the temperature adjustment by the temperature adjustment unit 32 is followed by the temperature adjustment by the transfer unit SCPL, the temperature of the wafer W may be roughly adjusted to the target temperature by the temperature adjustment unit 32, and then the temperature of the wafer W may be adjusted to the target temperature by the transfer unit SCPL. This allows the temperature of the wafer W to be adjusted to the target temperature in a short time, thereby improving throughput.

[0188] When the rear surface processing apparatus 2B is used, for example, the second transfer control is performed for the wafer W from which the friction-reducing film is to be removed. In the second transfer control, transfers B1 to B4 are performed in order.

[0189] B1 transport: Transport from the transfer unit TRS to the light irradiation unit 33 (specifically, transport from the transfer unit TRS of the transfer tower 12B to the light irradiation unit 33 in the processing block BL at the same height as the transfer unit TRS). B2 transport: Transport from inside the light irradiation unit 33 to the temperature adjustment unit 32 (specifically, transport from inside the light irradiation unit 33 to the temperature adjustment unit 32 provided in the same processing block BL). B3 transport: Transport from inside the temperature adjustment unit 32 to the transfer unit SCPL. B4 transport: Transport from inside the transfer unit SCPL to the transfer unit TRS.

[0190] The B1 transfer and B3 transfer performed by the second transfer control use the transfer arm 51a1 of the two transfer arms 51a of the transfer unit 51, and the B2 transfer and B4 transfer use the transfer arm 51a2.

[0191] That is, when the back surface processing apparatus 2B is used, for example, a wafer W from which a friction-reducing film is to be removed is transported by a transport unit 51 having two transport arms 51a as follows: from a transfer unit TRS of the transfer tower 12B to a light irradiation unit 33 in a processing block BL at the same height as the transfer unit TRS by the transport arm 51a1, then to a temperature adjustment unit 32 in the same processing block BL by the transport arm 51a2, then to a transfer unit SCPL at the same height as the processing block BL by the transport arm 51a1, then to the transfer unit TRS by the transport arm 51a2.

[0192] Since the light irradiation unit 33 removes particles from the back surface of the wafer W along with the friction reduction film, by performing the above-described transport, the transport arm 51a2, which comes into contact with the wafer W after cleaning by the back surface cleaning unit 41 and before the friction reduction film is formed, can be prevented from being contaminated by the wafer W from which the friction reduction film has been removed from the back surface by the light irradiation unit 33.

[0193] Furthermore, when the rear surface processing apparatus 2B is used, clean mode transfer control may be performed. In the clean mode transfer control, the A1 transfer and B1 transfer for one wafer W are not performed immediately before the A2 transfer for another wafer W. Instead, in the clean mode transfer control, the A2 transfer and subsequent transfers in the first transfer control or the B2 transfer and subsequent transfers in the second transfer control for one wafer W are performed immediately before the A2 transfer for the other wafer W.

[0194] Unlike the clean mode transfer control, if the A1 transfer (transfer from the transfer unit TRS to the back surface cleaning unit 41) of another wafer W is performed immediately before the A2 transfer (from the back surface cleaning unit 41 to the film formation unit 31) of one wafer W, the first wafer W after cleaning may be contaminated by the other uncleaned wafer with a low cleanliness. Similarly, if the B1 transfer (transfer from the transfer unit TRS to the light irradiation unit 33) of another wafer W is performed immediately before the A2 transfer of one wafer W, the first wafer W after cleaning may be contaminated by the other wafer with a low cleanliness and before film removal. The clean mode transfer control can prevent these problems. Furthermore, as a result, the effect of the friction-reducing film formed on the first wafer W after the A2 transfer can be prevented from being affected by particles adhering to the other wafer with a low cleanliness and before film removal.

[0195] Immediately after the start of wafer W transfer into the rear surface processing apparatus 2B, clean mode transfer control cannot be performed, or performing clean mode transfer control would result in a deterioration in throughput. Therefore, normal transfer control may be performed from the start of wafer W transfer into the rear surface processing apparatus 2B until a predetermined period has elapsed (for example, until the first transfer control is completed for 1 / 3 to 1 / 2 of the wafers W in the carrier), and clean mode transfer control may be performed after the predetermined period has elapsed. In normal transfer control, each transfer in the first transfer control or each transfer in the second transfer control is performed for each wafer W regardless of timing. Therefore, in normal transfer control, the A1 transfer and B1 transfer may be performed for one wafer W immediately before the A2 transfer for another wafer W.

[0196] Reference Embodiment FIG. 21 is a front view schematically illustrating the overall configuration of a coating and developing apparatus according to a reference embodiment. The coating and developing apparatus 1000 of FIG. 21 will be described, focusing on differences from the coating and developing apparatus 3 illustrated in FIG. 6 and other figures. The coating and developing apparatus 1000 of FIG. 21 differs from the coating and developing apparatus 3 illustrated in FIG. 6 and other figures in that a film-forming unit 31 that forms a friction-reducing film on the back surface of a wafer W is provided in a processing station 102S. Specifically, the film-forming unit 31 is provided in a second block G2 in which a thermal processing unit is located in the processing station 102S. More specifically, the film-forming unit 31 is provided in a position closest to the carrier station 101 in the second block G2. Furthermore, there are multiple layers 121 that include the second block G2 in which the film-forming unit 31 is provided.

[0197] The third block G3 is provided with a temperature adjustment unit 32. Specifically, the temperature adjustment unit 32 is provided in a portion of the third block G3 adjacent to the middle position in the vertical direction (Z direction in the drawing) of each layer 121 in which the film formation unit 31 is provided. The film formation unit 31 may be provided in the third block G3.

[0198] When the coating and developing apparatus 1000 is used, the wafer W is sequentially subjected to, for example, the formation of a hydrophobic film on the front surface by the hydrophobic processing unit, the formation of a friction reduction film on the back surface by the film forming unit 31, and temperature control (specifically, cooling) by the temperature adjustment unit 32, and then steps S5 to S10 of the processing sequence described using Figure 8 are performed.

[0199] Since the film forming unit 31 and the temperature adjusting unit 32 are provided at the positions described above, the movement time of the wafer W is short in the series of processes from when the wafer W is carried into the carrier station 101 to when the friction-reducing film is formed on the back surface of the wafer W and then when the wafer W is cooled, thereby reducing the throughput of the series of processes.

[0200] <Modification> The temperature adjustment unit 32 may be used as a buffer where the wafer W waits to be transferred. For example, after the friction-reducing film is removed from the backside of the wafer W on which a developed resist pattern has been formed by the light irradiation unit 33, the wafer W may wait in the temperature adjustment unit 32 until it is transferred to the transfer unit 61 of the transfer tower 12. In this case, a gas (e.g., an inert gas) that suppresses reaction between the resist pattern and atmospheric components may be supplied to the processing space of the temperature adjustment unit 32. Specifically, the inert gas may be supplied toward the wafer W on a cooling plate provided in the temperature adjustment unit 32.

[0201] In the above example, wafers W are transported between the rear surface processing apparatus and the coating and developing apparatus in carrier units. Alternatively, wafers may be transported one by one. In this case, for example, the rear surface processing apparatus and the coating and developing apparatus are connected (i.e., integrated) via a relay apparatus, and wafers W are transported between the rear surface processing apparatus and the coating and developing apparatus by a transfer arm provided in the relay apparatus that supports wafers W on a wafer-by-wafer basis.

[0202] In the above example, the friction-reducing film formed on the backside of the wafer W is a hydrophobic film, and HMDS gas is used as the source gas. Alternatively, the friction-reducing film may be formed using a fluororesin (e.g., Teflon (registered trademark) resin).

[0203] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0204] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0205] The following configuration examples also fall within the technical scope of the present disclosure: (1) A backside processing apparatus having three or more processing blocks stacked vertically, each of which is provided with a transport mechanism for transporting substrates, a film forming unit for forming a friction-reducing film on the backside of the substrate, and a temperature adjusting unit for adjusting the temperature of the substrates having the friction-reducing film formed on the backside. (2) The backside processing apparatus according to (1), further comprising: a carrier station on which a container for collectively accommodating a plurality of the substrates is placed; and a transfer tower in which transfer units on which the substrates are placed when the substrates are transferred between the carrier station and the processing block are stacked vertically, wherein the carrier station is provided with another transport mechanism for transporting the substrates between the transfer units and the container. (3) The back surface processing apparatus according to (2), wherein each of the processing blocks has, in a top view, a first region and a second region facing each other with a transport region in which the transport mechanism is provided therebetween, the film forming unit and the temperature adjusting unit being provided in the first region, and a back surface cleaning unit that cleans the back surface of the substrate being provided in the second region. (4) The back surface processing apparatus according to (3), wherein a light irradiating unit that irradiates the back surface of the substrate with light and removes the friction-reducing film formed on the back surface is provided in the first region. (5) The back surface processing apparatus according to (4), wherein the light irradiated by the light irradiating unit is ultraviolet light having a wavelength of 10 nm to 200 nm. (6) The back surface processing apparatus according to any one of (1) to (5), wherein the number of film forming units and the number of temperature adjusting units provided in each of the processing blocks are equal. (7) The back surface processing apparatus according to (4) or (5), wherein the film forming unit heats the substrate when the friction reduction film is formed, the temperature adjusting unit cools the substrate having the friction reduction film formed on the back surface thereof, and in the first region of each of the processing blocks, the film forming unit, the temperature adjusting unit, and the light irradiating unit are stacked in this order from the bottom up. (8) The back surface processing apparatus according to (3) to (5) or (7), further comprising a control unit, wherein the control unit controls transport so that the substrate in the container is transported in the order of the transfer unit, the back surface cleaning unit, the film forming unit, and the temperature adjusting unit, and then returned to the container via the transfer unit.(9) The back surface treatment apparatus according to (3) to (5) or (7), further comprising a control unit, wherein at least a part of the transfer unit in the transfer tower is configured to be capable of controlling the temperature of the substrate, and the control unit performs transport control so that the substrate in the container is transported in the order of the transfer unit, the back surface cleaning unit, the film forming unit, and the temperature adjustment unit, and then returned to the container via the transfer unit, and the back surface cleaning unit, the film forming unit, and the temperature adjustment unit to which the substrate is transported by the transport control are located within the same processing block, and the transfer unit to which the substrate is transported after the temperature adjustment unit by the transport control is configured to be capable of controlling the temperature of the substrate, and is located at the same height as the processing block in which the back surface cleaning unit, the film forming unit, and the temperature adjustment unit through which the substrate has passed are provided. (10) The back surface processing apparatus according to (9), wherein, during the transport control, the temperature of the substrate is roughly adjusted to a target temperature in the temperature adjustment unit, and the temperature of the substrate is adjusted to the target temperature in the transfer unit configured to be able to control the temperature of the substrate. (11) The back surface processing apparatus according to (4), (5), or (7), further comprising a control unit, wherein the control unit performs transport control so that the substrate in the container is transported to the light irradiation unit via the transfer unit and then returned to the container via the transfer unit. (12) The back surface processing apparatus according to any one of (8) to (10), wherein the processing times in each unit are, in order from longest to shortest, the back surface cleaning unit, the film formation unit, and the temperature adjustment unit, and wherein the number of the film formation units and the temperature adjustment units provided in each of the processing blocks is equal, and the number of the back surface cleaning units is greater than the number of the film formation units and the temperature adjustment units. (13) The back surface processing apparatus described in (4) above further includes a control unit, wherein the transport mechanism includes a first substrate support unit and a second substrate support unit that support the substrate, and the control unit performs transport control so that the substrate in the transfer unit is transported to the back surface cleaning unit by the first substrate support unit, the substrate in the back surface cleaning unit is transported to the film forming unit by the second substrate support unit, and the substrate in the film forming unit is transported to the temperature adjustment unit by the first substrate support unit.(14) The back surface processing apparatus according to (13), wherein at least a part of the transfer section in the transfer tower is configured to be able to adjust the temperature of the substrate, and the control section performs the transport control so that the substrate in the temperature adjustment section is transported by the second substrate support section to the transfer section configured to be able to adjust the temperature of the substrate. (15) The back surface processing apparatus according to (13) or (14), wherein the control section performs the transport control so that the substrate in the transfer section is transported by the first substrate support section to the light irradiation section, and the substrate in the light irradiation section is transported into the temperature adjustment section by the second substrate support section. (16) The back surface treatment apparatus according to (4), (5), or (7), further comprising a control unit, which performs first transport control for sequentially performing A1 transport from the transfer unit to the back surface cleaning unit, A2 transport from the back surface cleaning unit to the film forming unit, and A3 transport from the film forming unit to the temperature adjusting unit, for the substrate, and performs second transport control for sequentially performing B1 transport from the transfer unit to the light irradiation unit and B2 transport from the light irradiation unit to the temperature adjusting unit, for the substrate, and further performs clean mode transport control for performing the A2 transport and subsequent transports in the first transport control or the B2 transport and subsequent transports in the second transport control for the other substrates immediately before the A2 transport for one of the substrates, without performing the A1 transport and the B1 transport for the other substrates. (17) The rear surface processing apparatus according to (16), wherein the control unit also performs normal transport control for performing each transport in the first transport control or each transport in the second transport control for each of the substrates regardless of timing, performs the normal transport control until a predetermined period has elapsed since the substrates are started to be carried into the rear surface processing apparatus, and performs the clean mode transport control after the predetermined period has elapsed. (18) The rear surface processing apparatus according to (3), wherein the transport region is under positive pressure relative to the second region. (19) The rear surface processing apparatus according to (3), (7), or (18), wherein the first region is provided with a light irradiation unit that irradiates the rear surface of the substrate with light to remove the friction-reducing film formed on the rear surface, and wherein the transport region is under positive pressure relative to the first region.(20) The backside processing apparatus according to any one of (2) to (5) and (7) to (19), wherein a transfer region in which the transfer mechanism is provided has a positive pressure relative to an interior of the carrier station. (21) The backside processing apparatus according to any one of (1) to (20), wherein the film formation unit forms a hydrophobic film on the surface of the substrate when forming the friction reduction film. (22) The backside processing apparatus according to (18), wherein the film formation unit has: a processing vessel that accommodates the substrate and forms a processing space, a first supply port that supplies a first gas to the substrate from above the substrate in the processing vessel, and a second supply port that supplies a second gas to the substrate from a position below the substrate in the processing vessel facing a central region of the substrate, and is configured to be able to supply a hydrophobic gas as the first gas from the first supply port and the second gas from the second supply port. (23) The backside processing apparatus according to (22), wherein the first supply port has a central supply port formed at a position opposite to the second supply port with the substrate sandwiched between them in the processing chamber, and for the substrate having only a front surface to be hydrophobized, the hydrophobizing gas is supplied as the first gas from the central supply port and an inert gas is supplied as the second gas from the second supply port during the hydrophobization of the front surface. (24) The backside processing apparatus according to (2) to (5) and (7) to (20), wherein an inspection unit that inspects the substrate is provided in the carrier station. (25) The rear surface treatment device according to any one of (4), (5), (7), (11), (13) to (17), has three adjacent layers of treatment blocks, wherein the three adjacent layers of treatment blocks are stacked in the order of the film formation unit, the temperature adjustment unit, and the light irradiation unit from the bottom up in each of the upper and lower treatment blocks, and the light irradiation unit, the temperature adjustment unit, and the film formation unit from the bottom up in the middle treatment block.(26) A substrate processing system comprising a rear surface processing device and a front surface film forming device, wherein the rear surface processing device has three or more processing blocks stacked vertically, each of the processing blocks having a transport mechanism for transporting a substrate, a film forming unit for forming a friction-reducing film on the rear surface of the substrate, a temperature adjustment unit for adjusting the temperature of the substrate having the friction-reducing film formed on its rear surface, and a light irradiation unit for irradiating the rear surface of the substrate with light and removing the friction-reducing film formed on the rear surface, and the front surface film forming device has a resist film forming unit for forming a resist film on the temperature-adjusted front surface of the substrate after the friction-reducing film has been formed on the rear surface, and a heating unit for heating the substrate having the resist film formed on it before exposure, and the light irradiation unit of the rear surface processing device removes the friction-reducing film formed on the rear surface of the substrate after the resist film has been exposed and developed. (27) The back surface processing apparatus according to (3), wherein the number of stacked processing blocks is three, and other processing blocks are provided between the lower and middle processing blocks, between the middle and upper processing blocks, and above the upper processing block, respectively, and the carrier station is provided with the other transport mechanisms, which are a first transport mechanism that transports the substrate to be loaded into the processing block and a second transport mechanism that transports the substrate unloaded from the processing block, and the substrate is placed on the transfer section of the transfer tower even when the substrate is transferred between the other processing block and the carrier station, and each of the other processing blocks is provided with a light irradiation section in a third area above the first area that irradiates light onto the back surface of the substrate and removes the friction-reducing film formed on the back surface, the back surface cleaning section is provided in a fourth area above the second area, and another transport mechanism that transports the substrate is provided in an area above the transport area.(28) A transport method for transporting a substrate in a substrate processing system, the substrate processing system comprising: a rear surface processing apparatus, a front surface film forming apparatus, and a developing apparatus; the rear surface processing apparatus having three or more processing blocks stacked vertically, each of the processing blocks being provided with: a film forming unit that forms a friction-reducing film on the rear surface of the substrate; a temperature adjusting unit that adjusts the temperature of the substrate having the friction-reducing film formed on its rear surface; and a light irradiating unit that irradiates the rear surface of the substrate with light to remove the friction-reducing film formed on the rear surface; the front surface film forming apparatus having: a resist film forming unit that forms a resist film on the front surface of the substrate; and a heating unit that heats the substrate having the resist film formed on it before exposure; and the developing apparatus having: another heating unit that heats the substrate having the resist film formed on it after exposure; and a developing unit that develops the resist film on the substrate that has been heated after exposure; A substrate transport method, in which the substrate is transported within the rear surface processing device through the film forming section and then the temperature adjustment section, and then within the front surface film forming device through the resist film forming section and then the heating section, and then through the developing device, the other heating section, and then the developing section, and then to the light irradiation section of the rear surface processing device.

[0206] REFERENCE SIGNS LIST 1 wafer processing system 2, 2A, 2B back surface processing apparatus 3 coating and developing apparatus 31, 31A film formation unit 32 temperature adjustment unit 33 light irradiation unit 51 transport unit 201 resist film formation unit 202 PAB unit 203 PEB unit 204 developing unit BL, BL1 processing block W wafer

Claims

1. A rear surface processing apparatus having three or more processing blocks stacked vertically, each of which is provided with a transport mechanism for transporting substrates, a film forming unit for forming a friction-reducing film on the rear surface of the substrate, and a temperature adjusting unit for adjusting the temperature of the substrate having the friction-reducing film formed on its rear surface.

2. A backside processing apparatus as described in claim 1, further comprising: a carrier station on which a container for accommodating a plurality of the substrates is placed; and a transfer tower in which transfer sections on which the substrates are placed when the substrates are transferred between the carrier station and the processing block are stacked vertically, wherein the carrier station is provided with another transport mechanism for transporting the substrates between the transfer sections and the containers.

3. The rear surface processing apparatus according to claim 2, wherein each of the processing blocks is, in top view, a first region and a second region that face each other with a transport region in which the transport mechanism is provided therebetween, and wherein the film forming unit and the temperature adjustment unit are provided in the first region, and a rear surface cleaning unit that cleans the rear surface of the substrate is provided in the second region.

4. The rear surface processing apparatus according to claim 3, wherein a light irradiation section is provided in the first area to irradiate the rear surface of the substrate with light and remove the friction-reducing film formed on the rear surface.

5. The rear surface processing apparatus according to claim 4, wherein the light emitted by the light irradiation unit is ultraviolet light having a wavelength of 10 nm to 200 nm.

6. The rear surface processing apparatus according to any one of claims 1 to 5, wherein the number of the film forming units and the number of the temperature adjusting units provided in each of the processing blocks are equal.

7. A rear surface processing apparatus as described in claim 4 or 5, wherein the film forming unit heats the substrate when forming the friction reduction film, the temperature adjustment unit cools the substrate on whose rear surface the friction reduction film has been formed, and in the first region of each of the processing blocks, the film forming unit, the temperature adjustment unit and the light irradiation unit are stacked in this order from the bottom up.

8. The back surface processing apparatus according to claim 3, further comprising a control unit, which controls transport so that the substrate in the container is transported in the order of the transfer unit, the back surface cleaning unit, the film forming unit, and the temperature adjustment unit, and then returned to the container via the transfer unit.

9. A back surface treatment apparatus according to any one of claims 3 to 5, further comprising a control unit, wherein at least a part of the transfer unit in the transfer tower is configured to be capable of controlling the temperature of the substrate, and the control unit performs transport control so that the substrate in the container is transported in the order of the transfer unit, the back surface cleaning unit, the film forming unit, and the temperature adjustment unit, and then returned to the container via the transfer unit, and the back surface cleaning unit, the film forming unit, and the temperature adjustment unit to which the substrate is transported by the transport control are located within the same processing block, and the transfer unit to which the substrate is transported after the temperature adjustment unit by the transport control is configured to be capable of controlling the temperature of the substrate, and is located at the same height as the processing block in which the back surface cleaning unit, the film forming unit, and the temperature adjustment unit through which the substrate has passed are provided.

10. A rear surface processing apparatus as described in claim 9, wherein, during the transport control, the temperature of the substrate is roughly adjusted to a target temperature in the temperature adjustment section, and the temperature of the substrate is adjusted to the target temperature in the transfer section configured to be able to adjust the temperature of the substrate.

11. A rear surface processing apparatus as described in claim 4 or 5, further comprising a control unit, which controls transport so that the substrate in the container is transported to the light irradiation unit via the transfer unit and then returned to the container via the transfer unit.

12. The back surface processing apparatus according to claim 8, wherein the processing times in each section are, in order from longest to shortest, the back surface cleaning section, the film forming section, and the temperature adjusting section, and the number of the film forming sections and the temperature adjusting sections provided in each processing block is equal, and the number of the back surface cleaning sections provided is greater than the number of the film forming sections and the temperature adjusting sections provided in each processing block.

13. A back surface processing apparatus as described in claim 4, further comprising a control unit, wherein the transport mechanism has a first substrate support unit and a second substrate support unit that support the substrate, and the control unit performs transport control so that the substrate in the transfer unit is transported to the back surface cleaning unit by the first substrate support unit, the substrate in the back surface cleaning unit is transported to the film formation unit by the second substrate support unit, and the substrate in the film formation unit is transported to the temperature adjustment unit by the first substrate support unit.

14. The back surface processing apparatus according to claim 13, wherein at least a portion of the transfer section in the transfer tower is configured to be able to adjust the temperature of the substrate, and the control section performs the transport control so that the substrate in the temperature adjustment section is transported by the second substrate support section to the transfer section configured to be able to adjust the temperature of the substrate.

15. The rear surface processing device described in claim 13, wherein the control unit controls transport so that the substrate in the transfer unit is transported to the light irradiation unit by the first substrate support unit, and the substrate in the light irradiation unit is transported to the temperature adjustment unit by the second substrate support unit.

16. A backside processing apparatus according to claim 4 or 5, further comprising a control unit, which executes first transport control for sequentially performing A1 transport from within the transfer unit to the backside cleaning unit, A2 transport from within the backside cleaning unit to the film formation unit, and A3 transport from within the film formation unit to the temperature adjustment unit, and executes second transport control for sequentially performing B1 transport from within the transfer unit to the light irradiation unit and B2 transport from within the light irradiation unit to the temperature adjustment unit, and further performs clean mode transport control for performing the A2 transport and subsequent transport in the first transport control or the B2 transport and subsequent transport in the second transport control for the other substrates immediately before the A2 transport for one of the substrates, without performing the A1 transport and the B1 transport for the other substrates.

17. The rear surface processing apparatus according to claim 16, wherein the control unit also performs normal transport control for each of the substrates, regardless of timing, to perform each transport in the first transport control or each transport in the second transport control, and performs the normal transport control until a predetermined period has elapsed since the substrates began to be carried into the rear surface processing apparatus, and performs the clean mode transport control after the predetermined period has elapsed.

18. The rear surface processing apparatus according to claim 3, wherein the inside of the transport region is under a positive pressure relative to the inside of the second region.

19. A rear surface processing apparatus as described in claim 3 or 18, wherein a light irradiation unit is provided in the first area to irradiate the rear surface of the substrate with light and remove the friction-reducing film formed on the rear surface, and the transport area is under positive pressure relative to the first area.

20. The rear surface processing apparatus according to any one of claims 2 to 5 and 18, wherein the inside of the transport area in which the transport mechanism is provided is under a positive pressure relative to the inside of the carrier station.

21. The rear surface processing apparatus according to any one of claims 1 to 5, wherein the film forming unit forms a hydrophobic film on the surface of the substrate when forming the friction-reducing film.

22. The backside processing apparatus described in claim 21, wherein the film formation unit has: a processing vessel that accommodates the substrate and forms a processing space; a first supply port that supplies a first gas to the substrate from above the substrate in the processing vessel; and a second supply port that supplies a second gas to the substrate from a position below the substrate in the processing vessel facing a central region of the substrate, and is configured to be able to supply a hydrophobizing gas as the first gas from the first supply port and the second gas from the second supply port.

23. The back surface processing apparatus described in claim 22, wherein the first supply port has a central supply port formed at a position opposite the second supply port across the substrate in the processing vessel, and for a substrate having only its front surface to be hydrophobized, during hydrophobization of the front surface, the hydrophobizing gas is supplied as the first gas from the central supply port, and an inert gas is supplied as the second gas from the second supply port.

24. The rear surface processing apparatus according to any one of claims 2 to 5, wherein an inspection unit for inspecting the substrate is provided in the carrier station.

25. A rear surface processing apparatus according to any one of claims 4, 5, and 13 to 15, comprising three adjacent layers of processing blocks, wherein the three adjacent layers of processing blocks are stacked in the order of, from bottom to top, the film formation section, the temperature adjustment section, and the light irradiation section in each of the upper and lower processing blocks, and the light irradiation section, the temperature adjustment section, and the film formation section in the order of, from bottom to top, the processing block in the middle layer.

26. A substrate processing system comprising a back surface processing device and a front surface film forming device, wherein the back surface processing device has three or more processing blocks stacked vertically, each of the processing blocks having a transport mechanism for transporting a substrate, a film forming unit for forming a friction-reducing film on the back surface of the substrate, a temperature adjustment unit for adjusting the temperature of the substrate having the friction-reducing film formed on its back surface, and a light irradiation unit for irradiating the back surface of the substrate with light and removing the friction-reducing film formed on the back surface, and the front surface film forming device has a resist film forming unit for forming a resist film on the temperature-adjusted front surface of the substrate after the friction-reducing film has been formed on the back surface, and a heating unit for heating the substrate having the resist film formed on it before exposure, and the light irradiation unit of the back surface processing device removes the friction-reducing film formed on the back surface of the substrate after the resist film has been exposed and developed.

27. The back surface processing apparatus according to claim 3, wherein the number of stacked processing blocks is three, and other processing blocks are provided between the lower and middle processing blocks, between the middle and upper processing blocks, and above the upper processing block, respectively, and the carrier station is provided with the other transport mechanisms, including a first transport mechanism that transports the substrate to be loaded into the processing block and a second transport mechanism that transports the substrate unloaded from the processing block, the substrate is placed on the transfer section of the transfer tower even when the substrate is transferred between the other processing block and the carrier station, and each of the other processing blocks is provided with a light irradiation section in a third area above the first area that irradiates light onto the back surface of the substrate and removes the friction-reducing film formed on the back surface, the back surface cleaning section is provided in a fourth area above the second area, and another transport mechanism that transports the substrate is provided in an area above the transport area.

28. A transport method for transporting a substrate in a substrate processing system, the substrate processing system comprising: a rear surface processing device, a front surface film forming device, and a developing device; the rear surface processing device having three or more processing blocks stacked vertically, each of the processing blocks having a film forming unit for forming a friction-reducing film on the rear surface of the substrate, a temperature adjusting unit for adjusting the temperature of the substrate having the friction-reducing film formed on its rear surface, and a light irradiating unit for irradiating the rear surface of the substrate with light and removing the friction-reducing film formed on the rear surface; the front surface film forming device having: a resist film forming unit for forming a resist film on the front surface of the substrate, and a heating unit for heating the substrate having the resist film formed on it before exposure; and the developing device having: another heating unit for heating the substrate having the resist film formed on it after exposure, and a developing unit for developing the resist film on the substrate that has been heated after exposure; A substrate transport method, in which the substrate is transported within the rear surface processing device through the film forming section and then the temperature adjustment section, and then within the front surface film forming device through the resist film forming section and then the heating section, and then through the developing device, the other heating section, and then the developing section, and then to the light irradiation section of the rear surface processing device.

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