Plasma source and substrate processing apparatus

Abstract

A plasma source according to one aspect of the present invention comprises: a reaction body which is formed by coupling a plurality of body units made of a single member, such that a gas diffusion space is formed therein and the inner surface of the gas diffusion space has a continuous surface, which has one or more insulating units coupled between the plurality of body parts coupled to each other, and which forms an overall closed-loop-shaped toroidal channel capable of activating process gas; a magnetic core unit that encompasses at least a part of the body unit; a winding unit, which receives power from a power supply unit so as to induce magnetic flux in the magnetic core unit; and a cooling medium flow unit formed on at least a part of the body unit so that a cooling medium is able to flow.

Description

Plasma source and substrate processing device

[0001] The present invention relates to semiconductor manufacturing technology, and more specifically, to a plasma source, a plasma source assembly, and a substrate processing device using the same.

[0002] In a substrate processing device for forming a semiconductor device, a device and process are being studied that perform substrate processing by supplying activated reactants, such as radicals, into the process chamber using a plasma source outside the process chamber, such as a remote plasma generator, without directly forming plasma within the process chamber. By utilizing a remote plasma generator in this manner, desired reactants can be generated and supplied into the process chamber, and since plasma is not directly formed within the process chamber, plasma damage to the substrate can be prevented.

[0003] To reduce the path by which radicals generated from a remote plasma generator are supplied to the substrate, a plasma source structure that couples the plasma source to the gas injection unit of the process chamber is being studied. This approach increases the activity ratio of radicals supplied to the substrate from the plasma source structure, thereby enhancing process efficiency during substrate processing.

[0004] Additionally, a cooling structure is being studied to increase the plasma efficiency of these plasma sources.

[0005] The present invention is intended to solve the above-mentioned problems, and one technical task according to the present invention is to provide a plasma source formed integrally to increase a plasma generation area and simplify assembly.

[0006] In addition, the present invention provides a plasma source and a substrate processing device using the same, which can control the temperature of the plasma source, thereby reducing plasma damage on the substrate and increasing process efficiency during substrate processing. However, these tasks are exemplary and the scope of the present invention is not limited thereby.

[0007] According to an aspect of the present invention for solving the technical problem of the present invention, a plasma source may include a reaction body formed by combining a plurality of body parts formed as a single member so that a gas diffusion space is formed therein and the inner surfaces of the gas diffusion spaces have mutually continuous surfaces, at least one insulating part formed between the plurality of body parts coupled to each other, and the gas diffusion spaces within the plurality of body parts are connected to each other to form the toroidal channel capable of activating a process gas having a closed loop shape as a whole; a magnetic core part formed to surround at least a portion of the body part; a winding part arranged to wind the magnetic core part and receiving power from a power source to induce a magnetic force within the magnetic core part; and a cooling medium flow part formed on at least a portion of the body part so that a cooling medium can flow.

[0008] According to some embodiments of the present invention, the cooling medium flow unit may include a cooling groove formed in the body unit; and a cover unit covering the cooling groove unit.

[0009] According to some embodiments of the present invention, the body portion is formed with a first region having a first height and a first width and a second region having a second height and a second width, the first height being greater than the second height, the first width being greater than the second width, the magnetic core portion being arranged to surround the second region of the body portion, and the cooling medium flow portion being formed in the first region of the body portion.

[0010] According to some embodiments of the present invention, the cooling medium flow portion is formed in at least one wall among the walls surrounding the body portion, and the body portion may be formed with a refrigerant inlet connected to one end of the cooling medium flow portion and a refrigerant outlet connected to the other end of the cooling medium flow portion.

[0011] According to some embodiments of the present invention, the body portion may be formed as a single member such that the inner surface of the cooling medium flow portion has a mutually continuous surface.

[0012] According to some embodiments of the present invention, the body portion, the cooling medium flow portion,

[0013] It can be formed on at least a portion of the body portion in a shape that at least partially surrounds the gas diffusion space.

[0014] According to some embodiments of the present invention, the body portion is formed with a first region having a first height and a first width and a second region having a second height and a second width, wherein the first height is greater than the second height, the first width is greater than the second width, and the magnetic core portion can be arranged to surround the second region of the body portion.

[0015] According to some embodiments of the present invention, the cooling medium flow portion may be formed in a shape that at least partially surrounds the gas diffusion space in the first region.

[0016] According to some embodiments of the present invention, the cooling medium flow portion may be formed in a shape that at least partially surrounds the gas diffusion space in the second region.

[0017] According to some embodiments of the present invention, at least one gas inlet may be formed in the upper wall or side wall of the body portion, and at least one opening may be formed in the lower wall of the body portion.

[0018] According to some embodiments of the present invention, the body part may be formed with a refrigerant inlet connected to one end of the cooling medium flow part and a refrigerant outlet connected to the other end of the cooling medium flow part.

[0019] According to some embodiments of the present invention, the reaction body may include a gas discharge plate having a gas discharge hole formed therein so as to discharge an activated process gas downward, and the gas discharge hole is connected to the lower portion of the reaction body so as to communicate with the at least one opening.

[0020] According to some embodiments of the present invention, the gas discharge plate may be formed of an insulating material.

[0021] According to some embodiments of the present invention, a source insulating member may be coupled between the reaction body and the gas discharge plate.

[0022] According to an aspect of the present invention for solving the technical problem of the present invention, a substrate processing device comprises: a process chamber having a reaction space formed therein; a substrate support unit coupled to a lower portion of the process chamber to support a substrate within the reaction space; a plasma source assembly having at least one plasma source coupled to an upper portion of the process chamber; and a gas injection unit facing the substrate support unit and disposed below the plasma source assembly, the gas injection unit having a gas injection plate formed thereon for injecting a process gas activated by the plasma source assembly onto the substrate support unit; wherein the plasma source assembly comprises: a gas discharge plate having a gas discharge hole formed therein to discharge the process gas downward; a first plasma source coupled on the gas discharge plate; And a second plasma source spaced apart from the first plasma source and coupled to the gas discharge plate; wherein the first plasma source may be provided with a first opening through which a process gas activated through the first plasma source is discharged, and the second plasma source may be provided with a second opening through which a process gas activated through the second plasma source is discharged.

[0023] According to some embodiments of the present invention, the plasma source and substrate processing device configured as described above can be freely manufactured in a shape that is easy to maintain plasma by forming the body of the plasma source as a single member having a continuous surface, and since there is no fastening surface for assembly within the body of the plasma source, the risk of leaks and gas leakage at the boundary due to fastening can be prevented, and the time and cost for replacement and maintenance due to deformation of the sealing member can be reduced.

[0024] In addition, since a separate fastening structure is not formed within the body of the plasma source, the thickness of the inner wall of the body can be reduced, the toroidal channel, i.e., the plasma generation area can be increased, and the assembly can be simplified.

[0025] Additionally, by forming a cooling line within the plasma source, plasma damage can be reduced, and process stability and efficiency during substrate processing can be improved. Of course, the scope of the present invention is not limited by these effects.

[0026] FIG. 1 is a schematic diagram showing a plasma source according to one embodiment of the present invention.

[0027] Figure 2 is a schematic perspective view showing the plasma source of Figure 1.

[0028] Figure 3 is a schematic diagram showing power transmission in the plasma source of Figure 1.

[0029] Figures 4 and 5 are schematic perspective views showing some configurations of a reaction body in the plasma source of Figure 1.

[0030] FIG. 6 is a cross-sectional view showing various embodiments of the l-l' cross-section of the plasma source of FIG. 4.

[0031] Fig. 7 is a cross-sectional view showing the cut surface of m-m' in the plasma source of Fig. 4.

[0032] Fig. 8 is a cross-sectional view showing the n-n' cross-section of the plasma source of Fig. 4.

[0033] FIG. 9 is a schematic perspective view showing a portion of a reaction body configuration in a plasma source according to another embodiment of the present invention.

[0034] Fig. 10 is a conceptual perspective view showing the shape of the cooling medium flow portion in the plasma source of Fig. 9.

[0035] Fig. 11 is a cross-sectional view showing the cut surface of o-o' in the plasma source of Fig. 9.

[0036] FIGS. 12 and 13 are cross-sectional views showing p-p' cross sections according to various embodiments of the plasma source of FIG. 9.

[0037] FIG. 14 is a top view showing a gas discharge plate of a plasma source according to some embodiments of the present invention.

[0038] FIGS. 15 to 17 are schematic perspective views showing cut-away portions of plasma sources according to various embodiments of the present invention.

[0039] FIGS. 18 and 19 are schematic cross-sectional views showing a substrate processing device according to various embodiments of the present invention.

[0040] FIG. 20 is a schematic cross-sectional view showing a substrate processing device according to another embodiment of the present invention.

[0041] FIG. 21 is a schematic perspective view showing a plasma source assembly of a substrate processing apparatus according to some embodiments of the present invention.

[0042] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0043] The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. The following embodiments may be modified in various ways, and the scope of the present invention is not limited to the embodiments described below. Rather, these embodiments are provided to more faithfully and completely explain the present disclosure and to fully convey the spirit of the present invention to those skilled in the art.

[0044] Additionally, the thickness and size of each layer in the drawings are exaggerated for convenience and clarity of explanation. Furthermore, the embodiments of the present invention should not be construed as limited to the specific shapes of the regions illustrated in this specification, and should include, for example, changes in shape resulting from manufacturing processes.

[0045] FIG. 1 is a schematic diagram showing a plasma source according to one embodiment of the present invention, FIG. 2 is a schematic perspective view showing the plasma source of FIG. 1, FIG. 3 is a schematic diagram showing power transmission in the plasma source of FIG. 1, and FIGS. 4 and 5 are schematic perspective views showing a part of the configuration of a reaction body (210) in the plasma source of FIG. 1.

[0046] Referring to FIGS. 1 to 5, a plasma source (200) according to one embodiment of the present invention may include a reaction body (210), a magnetic core portion (220), a winding portion (230), and a cooling medium flow portion (240).

[0047] The reaction body (210) may include a body portion (211) and an insulation portion (216). The body portion (211) may each have a gas diffusion space (214) formed therein.

[0048] Specifically, the first body part (211a) may have a first gas diffusion space (214a) formed therein, the second body part (211b) may have a second gas diffusion space (214b) formed therein, and the third body part (211c) may have a third gas diffusion space (214c) formed therein. The cross-sectional shape of the gas diffusion space (214) may have various shapes such as a circle, an ellipse, a polygon, etc. In this case, the gas diffusion space (214) may be a toroidal channel.

[0049] In some embodiments, the body portion (211) may be formed by coating an insulating material on a conductive material. For example, the body portion (211) may be formed by coating an insulating material, such as a metal oxide or metal nitride, on a metal.

[0050] In some embodiments, at least one gas inlet (213) may be formed on the upper wall or side wall of the body portion (211) for introducing gas into the toroidal channel, and at least one opening (215) may be formed on the lower wall of the body portion (211) for discharging gas.

[0051] The reaction body (210) may be formed with at least one insulating part (216) formed between a plurality of body parts that are mutually coupled.

[0052] An insulating portion (216) may be coupled between the body portions (211). The insulating portions (216) may be interposed between the two body portions (211) so that the two body portions (211) are not directly electrically connected to each other but are spaced apart from each other. For example, the insulating portions (216) may have a flow path formed therein so that the gas diffusion spaces (214) within the body portions (211) are in communication with each other. The insulating portions (216) may be formed of a suitable insulating material, such as an oxide, a nitride, a polymer resin, or the like.

[0053] In some embodiments, the reaction body (210) may form a toroidal channel in which gas diffusion spaces (214) within a plurality of body sections are interconnected to activate a process gas in a closed-loop shape as a whole. More specifically, the body section (211) may be formed to correspond to structures that are formed by carving out the overall shape of the toroidal channel so as to define the toroidal channel as a whole. For example, if the toroidal channel is formed as a whole in a donut shape, the body section (211) may be formed to correspond to structures that are formed by dividing the donut shape into a plurality of pieces.

[0054] The magnetic core portion (220) can be formed to surround at least a portion of the body portion (211).

[0055] The magnetic core parts (220) may be spaced apart from each other along the toroidal channel while each surrounding the reaction body (210). For example, the magnetic core parts (220) may be respectively disposed on the body parts (211). More specifically, the first magnetic core (220a) may be disposed to surround the outer surface of the first body part (211a), the second magnetic core (220b) may be disposed to surround the outer surface of the second body part (211b), and the third magnetic core (220c) may be disposed to surround the outer surface of the third body part (211c). For example, the magnetic core parts (220) may include a magnetic material, for example, a ferrite material.

[0056] In some embodiments, each magnetic core portion (220) may be formed as a single closed structure or may have a structure in which multiple segments are combined.

[0057] The winding part (230) is arranged to wind the magnetic core part (220) and can induce a magnetic force within the magnetic core part (220) by receiving power from the power supply part (400). For example, the first winding (230a) can be arranged to wind the first magnetic core (220a), the second winding (230b) can be arranged to wind the second magnetic core (220b), and the third winding (230c) can be arranged to wind the third magnetic core (220c).

[0058] The winding part (230) can receive power from the power supply part (400) and induce a magnetic force within the magnetic core part (220). For example, when the winding part (230) is wound in the width direction of the magnetic core part (220), if power is applied to the winding part (230), a magnetic force can be induced within the magnetic core part (220) along its circumferential direction.

[0059] As illustrated in FIG. 3, the power supply unit (400) may include a power supply device and supply RF power to the winding unit (230) via a resonant circuit unit (not shown). For example, the power supply unit (400) may include a switching mode power supply (SMPS).

[0060] In the above plasma source (200), the number of body parts (211) is shown as an example and may be selected as two or more. Furthermore, depending on the number of body parts (211), the number of magnetic core parts (220), winding parts (230), and insulating parts (216) may vary.

[0061] In some embodiments, the body portion (211) may be divided into a first region (2115) and a second region (2116).

[0062] For example, as shown in FIG. 4, a first region (2125) may have a first height (H1) and a first width (W1), and a second region (2126) may have a second height (H2) and a second width (W2). The first height (H1) may be greater than the second height (H2), and the first width (W1) may be equal to or greater than the second width (W2). For example, the first height (H1) may be 1.5 times or greater than the second height (H2), and the first width (W1) may be 1.1 to 1.4 times greater than the second width (W2).

[0063] More specifically, for example, the cross-sectional area of ​​the second region (2116) may be formed smaller than the cross-sectional area of ​​the first region (2115). Thus, the speed of the process gas flowing into the gas diffusion space (214) formed inside the second region (2116) to which the magnetic core portion (220) is coupled may flow at a faster speed than the speed of the process gas flowing into the gas diffusion space (214) formed inside the first region (2115), thereby inducing smooth flow of the gas in the gas diffusion space (214) as a whole, increasing the activation rate of the process gas, and increasing the activation rate.

[0064] Additionally, the second region (2116) of the body portion (211) is formed to have a smaller width and height than the first region (2115), so that the magnetic core portion (220) can be coupled to the second region (2116).

[0065] A flange (217) may be coupled to an end of the body part (211). For example, an insulating part (216) may be coupled to both sides of the body part (211) to provide separation from another body part. That is, the insulating part (216) may be coupled through the flange (217) formed at one end of the body part (211), and may be coupled to the other end of the other body part, so that the body part (211), the other body part, and the insulating part (216) are coupled in a state formed therebetween.

[0066] In some embodiments, at least one gas inlet (213) may be formed on an upper wall of the first region (2115), and at least one opening (215) may be formed on a lower wall of the first region (2115). Gas introduced into the gas diffusion space (214) through the gas inlet (213) may be activated by plasma and discharged to the lower portion of the plasma source (200) through the opening (215). For example, the opening (215) may be formed in a slit shape.

[0067] In some embodiments, the gas inlet (213) may be formed on a side wall of the first region (2115).

[0068] According to some embodiments of the present invention, as illustrated in FIG. 4, the plasma source (200) may include a sensor unit (250).

[0069] The sensor unit (250) may include a sensor for measuring the reaction of the process gas formed in the gas diffusion space (214), i.e., plasma. For example, the sensor unit (250) may be an optical sensor for measuring plasma.

[0070] FIG. 6 is a cross-sectional view showing various embodiments of a cross-section of l-l' in the plasma source of FIG. 4, FIG. 7 is a cross-sectional view showing a cross-section of m-m' in the plasma source of FIG. 4, and FIG. 8 is a cross-sectional view showing a cross-section of n-n' in the plasma source of FIG. 4.

[0071] Referring to FIGS. 4 to 8, the reaction body (210) can be formed by combining a plurality of body parts (211) formed as a single member so that the inner surface of the gas diffusion space (214) has a mutually continuous surface.

[0072] Specifically, the body part (211) can be formed of a first region (2115) and a second region (2116). At this time, the first region (2115) and the second region (2116) can be formed as an integral body, and their shape and size can be freely modified.

[0073] For example, as illustrated in FIG. 4, the external shapes of the first region (2115) and the second region (2116) where the magnetic core portion (220) is coupled are formed to have different shapes, and the cross-sectional areas of the gas diffusion spaces (214) inside the first region (2115) and the second region (2116) are formed to be different from each other, so that the internal shapes of the first region (2115) and the second region (2116) can be formed to be different from each other.

[0074] At this time, the first region (2115) and the second region (2116) of the body portion (211) are formed as an integral body, so that a fastening surface or fastening portion for bonding may not be formed. That is, as illustrated in FIG. 8, in a cross-sectional view taken vertically along the gas diffusion space (214) of the body portion (211), the distinction between the first region (2115) and the second region (2116) is distinguished by the bonding of the magnetic core portion (220) and the flange (217), and no separate boundary surface is formed.

[0075] For example, the body portion (211) may be formed as a single member such that the inner surface of the gas diffusion space (214) has a mutually continuous surface, and the inner surface of the cooling medium flow portion (240) has a mutually continuous surface.

[0076] For example, the body part (211) is formed using 3D printing, so that its shape can be freely changed. Since the body part (211) is formed as a single piece using 3D printing, the body part (211) can have a continuous structure without a fastening surface or joint.

[0077] Accordingly, there is no need for a sealing part such as an O-ring to join the first region (2115) and the second region (2116) of the body part (211), and deformation of the sealing part due to high temperature in the gas diffusion space (214) or leaks occurring at the joining part can be prevented.

[0078] In addition, since there is no fastening part, no boundary is formed on the inner wall surrounding the gas diffusion space (214) formed inside the body part (211), so that the flow of process gas is more uniform, and particle generation at the boundary can be prevented, and the volume can be reduced due to the absence of the fastening part, or the area of ​​the gas diffusion space (214) can be increased.

[0079] Additionally, since no separate fasteners are formed, the thickness of the inner wall can be reduced, the heating area can be expanded in a limited volume, the plasma generation area can be increased, and the overall volume can be reduced while maintaining the same level of cooling performance.

[0080] In addition, since the internal flow path of the cooling medium flow section (240) is formed as a continuous surface without a fastening portion or joint, the cooling medium can be smoothly circulated within the cooling medium flow section (240).

[0081] A cooling medium flow section (240) for the flow of cooling medium may be formed within at least a portion of each body section (211).

[0082] A cooling medium flow portion (240) may be formed in at least a portion of the body portion (211) so that the cooling medium can flow. The cooling medium can be circulated through the cooling medium flow portion (240), thereby cooling the reaction body (210). For example, the cooling medium flow portion (240) may be formed as a cooling channel on one surface of the body portion (211) around the gas diffusion space (214). The cooling medium may include cooling water.

[0083] In some embodiments, the cooling medium flow portion (240) may be formed in a groove shape in the first region (2115), for example, in the upper wall of the first region (2115). Specifically, the cooling medium flow portion (240) may be formed in a channel shape patterned in a predetermined shape. For example, the cooling medium flow portion (240) may be formed by carving a channel-shaped groove in the upper wall of the first region (2115) through a machining process.

[0084] The cooling medium flow portion (240) may include a cooling groove portion (241) formed as a groove portion in the body portion (211) and a cover portion (212) covering the cooling groove portion (241).

[0085] Accordingly, the cooling medium flow portion (240) can be sealed.

[0086] In some embodiments, the body portion (211) may be conveniently divided into an upper body (2111) and a lower body (2112). At this time, the gas diffusion space (214) may be formed in the lower body (2112) of the body portion (211), and the cooling medium flow portion (240) may be formed in the upper body (2111). For example, when looking at a cross-section taken vertically in the direction of looking at the gas diffusion space (214) in the first region (2115), as illustrated in FIG. 6, the cooling medium flow portion (240) may be formed in the upper body (2111) of the body portion (211), and the gas diffusion space (214) may be formed in the lower body (2112). However, the upper body (2111) and the lower body (2112) are only virtual divisions based on the gas diffusion space (214), and do not mean physically separated parts.

[0087] As described above, the heat generated in the gas diffusion space (214) is transferred to the cooling medium flowing through the body part (211) to the cooling medium flow part (240), thereby lowering the temperature of the reaction body (110), preventing heat from diffusing to the outside of the reaction body (110), and further suppressing heat transfer to the magnetic core part (220) to maintain the characteristics of the magnetic core.

[0088] At this time, so that the cooling medium flow portion (240) can be formed in a groove shape on the upper portion of the upper body (2111), the upper and lower thicknesses of the upper body (2111) can be formed thicker than the side wall thickness of the lower body (2112).

[0089] The above describes an example in which the cooling medium flow portion (240) is formed on the upper or upper wall of the body portion (211), but in some embodiments, the cooling medium flow portion (240) may be formed on the side wall or lower wall of the body portion (211).

[0090] FIG. 9 is a schematic perspective view showing a part of the configuration of a reaction body (210) in a plasma source according to another embodiment of the present invention, FIG. 10 is a conceptual perspective view showing the shape of a cooling medium flow portion (240) in the plasma source of FIG. 9, FIG. 11 is a cross-sectional view showing a cross-section of o-o' in the plasma source of FIG. 9, and FIGS. 12 and 13 are cross-sectional views showing a cross-section of p-p' in the plasma source of FIG. 9 according to various embodiments.

[0091] According to another embodiment of the present invention, a plasma source may have a cooling medium flow section (240) formed within at least a portion of each body section (211) for the flow of a cooling medium, as illustrated in FIGS. 9 to 13.

[0092] The cooling medium flow portion (240) may be formed integrally with the body portion (211) within the body portion (211) in a shape that surrounds the periphery of the gas diffusion space (214) so ​​that the cooling medium can flow around the gas diffusion space (214). The cooling medium can be circulated through the cooling medium flow portion (240), and thus the reaction body (210) can be cooled.

[0093] For example, the cooling medium flow portion (240) may be formed in at least a portion of the body portion (211), for example, at least one of the upper portion, the side portion, and the lower portion, in a shape that at least partially surrounds the gas diffusion space (214), and preferably, the cooling medium flow portion may be formed in the upper portion and the side portion.

[0094] More specifically, a cooling medium flow portion (240) may be formed along an inner wall surrounding a gas diffusion space (214) on the inside of the body portion (211) in which a cooling medium flows. At this time, as illustrated in FIG. 11, the cooling medium flow portion (240) may be formed on the upper and both sides where no opening (215) is formed based on the direction in which the gas diffusion space (214) is viewed from the body portion (211).

[0095] The cooling medium flow portion (240) may be formed by bending multiple times around the periphery of the gas diffusion space (214) so ​​that the cooling medium can flow as long as possible around the gas diffusion space (214).

[0096] According to some embodiments, as illustrated in FIG. 12, the cooling medium flow portion (240) inside the body portion (211) may be formed at the periphery of the gas diffusion space (214) in the first region (2115). Thus, the gas may be activated within the toroidal channel to prevent the first region (2115) of the body portion (211) from being heated to a high temperature.

[0097] According to some embodiments, at least a portion of the cooling medium flow portion (240) may be formed in a shape that at least partially surrounds the gas diffusion space (214) in the first region (2115).

[0098] According to some embodiments, at least a portion of the cooling medium flow portion (240) may be formed in a shape that at least partially surrounds the gas diffusion space (214) in the second region (2116).

[0099] According to some embodiments, at least a portion of the cooling medium flow portion (240) may be formed in the first region (2115), and at least another portion of the cooling medium flow portion (240) may be formed in the second region (2116).

[0100] For example, the cooling medium flow portion (240) may be formed in the periphery of the second region (2116) where the magnetic core portion (220) is formed and the insulating portion (216) is coupled to ignite the plasma. Accordingly, the cooling medium may flow in all regions of the body portion (211), and heat emission to the outside due to heat generation of the body portion (211) and heat transfer to the magnetic core portion (220) may be prevented.

[0101] The cooling medium flow portion (240) can prevent the body portion (211) from being heated to a high temperature at a specific location depending on the plasma generation and diffusion area.

[0102] For example, the thickness and width of the flow path of the cooling medium flow portion (240) can be formed to be thicker or wider as the temperature of the plasma increases, thereby increasing the contact area with the cooling medium and improving the heat transfer efficiency of the cooling medium.

[0103] Alternatively, the cross-sectional area of ​​the flow path of the cooling medium flow section (240) can be made narrow to increase the flow rate of the cooling medium flowing in the flow path, thereby improving the cooling rate. This can be freely changed depending on the shape of the reaction body (210).

[0104] The cooling medium flow portion (240) may be formed so that the width of the cooling medium flow becomes narrower as it moves away from the magnetic core portion (220). For example, as illustrated in FIGS. 12 and 13, the width of the flow path of the cooling medium flow portion (240) may gradually decrease in the direction away from the second region (2116) to which the magnetic core portion (220) is coupled.

[0105] At this time, as shown in FIGS. 1 and 2, a first magnetic core (220a) and a first insulating portion (216a) may be coupled to one side of the first body portion (211a), and a second magnetic core (220b) and a second insulating portion (216b) coupled to a second body portion (211b) may be coupled to the other side of the first body portion (211a). That is, a magnetic core portion (220) and an insulating portion (216) may be coupled to both sides of the body portion (211).

[0106] Accordingly, the point where the magnetic core part (220) is formed furthest from the body part (211) may be the center of the body part (211), and the cooling medium flow part (240) may be formed so that the width of the cooling medium flow becomes narrower as it moves toward the center of the body part (211).

[0107] In addition, as illustrated in FIG. 10, the width (W4) of the passage through which the cooling medium flows in the cooling medium flow portion (240) formed to surround the periphery of the second region (2116) may be formed to be wider than the width (W3) of the passage through which the cooling medium flows in the cooling medium flow portion (240) formed to surround the periphery of the first region (2115).

[0108] Accordingly, when the temperature in the second region (2116) of the body part (211) is higher than that in the first region (2115), the width (W4) of the cooling medium flow part (240) formed in the second region (2116) is made wide, thereby increasing the cross-sectional area of ​​the flow path and increasing the heat transfer efficiency of the cooling medium, thereby preventing heat release from the second region (2116) and heat transfer to the magnetic core part (220).

[0109] Alternatively, the width (W4) of the cooling medium flow portion (240) formed in the second region (2116) may be formed narrowly to increase the flow velocity in the cooling medium flow portion (240) formed in the second region (2116), thereby preventing heat release in the second region (2116) and heat transfer to the magnetic core portion (220).

[0110] In addition, although not shown, when the temperature in the first region (2115) of the body part (211) is higher than the temperature in the second region (2116), the width (W3) of the cooling medium flow part (240) formed in the first region (2115) can be formed differently from the width (W4) of the cooling medium flow part (240) formed in the second region (2116), i.e., narrower or wider.

[0111] A cooling medium flow portion (240) is formed on at least one wall of the first region (2115), and a cooling medium inlet (218) connected to one end of the cooling medium flow portion (240) and a cooling medium outlet (219) connected to the other end of the cooling medium flow portion (240) can be formed in the first region (2115).

[0112] Most of the cooling medium flow section (240) is sealed, and a refrigerant supply line (not shown) can be connected to the refrigerant inlet (218) and the refrigerant outlet (219).

[0113] According to some embodiments of the present invention, heat generated in the gas diffusion space (214) is transferred to the cooling medium flowing through the body part (211) to the cooling medium flow part (240), whereby heat exchange can occur quickly to lower the temperature of the reaction body (210), prevent heat from diffusing to the outside of the reaction body (210), and further suppress heat transfer to the magnetic core part (220) to maintain the characteristics of the magnetic core.

[0114] According to the plasma source, when power is applied from the power supply unit (400) to the winding unit (230), a magnetic force is induced in the magnetic core unit (220), and by this induced magnetic force, a current can be induced in the toroidal channel penetrating the inside of the magnetic core unit (220). By this current, gas can be activated in the toroidal channel, thereby forming a plasma atmosphere.

[0115] In the plasma source, a magnetic force is induced from the current flowing in the winding section (230) to the magnetic core section (220), and the structure in which a current is induced in the toroidal channel by this induced magnetic force can correspond to the principle of a transformer. In this respect, the plasma source may also be called a transformer-coupled plasma (TCP) device or a magnetic induction plasma device.

[0116] In some embodiments, in the transformer structure, the winding portion (230) may function as a primary coil, and the toroidal channel defined by the body portion (211) may function as a secondary coil. In this respect, the winding portion (230) may be referred to as a primary coil or primary winding, and the current flowing in the winding portion (230) may be referred to as a primary current. Furthermore, the current induced within the toroidal channel may also be referred to as a secondary current.

[0117] According to the plasma source (200) described above, by combining a plurality of magnetic core parts (220) on a plurality of body parts (211), plasma can be stably formed in a toroidal channel, and further, by controlling the temperature of the body part (211) through the cooling medium flow part (240), plasma damage to the reaction body (210) can be reduced. In addition, by forming the cooling medium flow part (240) in each body part (211), the temperature of the reaction body (210) can be uniformly controlled overall.

[0118] FIG. 14 is a top view showing a gas discharge plate (300) of a plasma source according to some embodiments of the present invention, and FIGS. 15 to 17 are schematic perspective views showing cut portions of a plasma source (200) according to various embodiments of the present invention.

[0119] Referring to FIGS. 14 to 17, a plasma source (200) according to some embodiments of the present invention may include a gas discharge plate (300).

[0120] The gas discharge plate (300) can be formed with a gas discharge hole (320) so that the process gas activated in the reaction body (210) can be discharged downward and can be connected to the lower part of the reaction body (210).

[0121] As shown in FIG. 14, specifically, the gas discharge plate (300) may have first gas discharge holes (320a) formed to correspond to the first opening (215a) formed at the bottom of the first body part (211a), second gas discharge holes (320b) formed to correspond to the second opening (215ba) formed at the bottom of the second body part (211b), and third gas discharge holes (320c) formed to correspond to the third opening (215c) formed at the bottom of the third body part (211c).

[0122] The gas discharge plate (300) may be formed to directly cover the upper portion of the process chamber to be described later, and may be formed to be coupled to a chamber lid covering the process chamber.

[0123] As illustrated in FIG. 15, the reaction body (210) may be coupled to the gas discharge plate (300) to supply the activated process gas to the gas discharge plate (300). For example, the gas discharge hole (320) may be coupled to communicate with the opening (215) of the reaction body (210), and the gas discharge plate (300) may be formed to fit the shape of the reaction body (210).

[0124] In this way, by combining the gas discharge plate (300) with the reaction body (210), the activated process gas generated from the plasma source (200) can be easily supplied to the lower part of the plasma source (200) through the opening (215) and then sprayed through the gas discharge plate (300), and conversely, particles and the like can be prevented from flowing into the plasma source (200) from the outside of the gas discharge plate (300).

[0125] The gas discharge hole (320) is a hole structure that penetrates the gas discharge plate (300) and can be formed in the shape of a cylinder, cone, pyramid, etc.

[0126] In some embodiments, a source insulating member (260) may be interposed between the reaction body (210) and the gas discharge plate (300). Accordingly, noise currents such as ground current and leakage current can be prevented from being transmitted to the plasma source through the gas discharge plate (300).

[0127] Alternatively, a source insulating member (260) may be coupled to the lower portion of the gas discharge plate (300) of the plasma source (200). Accordingly, the process chamber coupled to the lower portion of the source insulating member (260) is electrically isolated from the process chamber, thereby preventing noise currents such as ground current and leakage current generated from the lower portion of the plasma source (200) from being transmitted to the plasma source.

[0128] For example, as illustrated in FIG. 16, the source insulating member (260) may be formed in a circular shape to support the entire gas discharge plate (300) from the lower portion of the gas discharge plate (300), and may be formed to directly cover and be coupled to the process chamber, or to be coupled to a chamber lid covering the process chamber. Alternatively, as illustrated in FIG. 17, the source insulating member (260) may be formed in a ring shape to correspond to the gas discharge plate (300), and may be coupled to a chamber lid covering the process chamber to be formed above the process chamber.

[0129] In some other embodiments, the gas discharge plate (300) may be formed of an insulating material. For example, the gas discharge plate (300) may be formed of an insulating material without using a separate insulating member, so that the plasma source (200) is not electrically connected to the process chamber and is spaced apart from each other.

[0130] FIGS. 18 and 19 are schematic cross-sectional views showing a substrate processing device according to various embodiments of the present invention.

[0131] As illustrated in FIGS. 18 and 19, the substrate processing apparatus may include a process chamber (2000), a substrate support (3000), a plasma source assembly (1000), and a gas injection unit (4000).

[0132] The process chamber (2000) may have a reaction space (B) formed therein. As shown in FIG. 18, the interior of the process chamber (2000) may be sealed with a gas exhaust plate (1300) of the plasma source assembly (1000), and the process chamber (2000) may include a chamber lid (2400) at the top to seal the interior. The process chamber (2000) may be connected to a vacuum pump (2300) through an exhaust unit (2200) to form a vacuum atmosphere. Furthermore, the process chamber (2000) may include an entrance for loading a substrate (S) into or unloading the substrate (S) from the reaction space (B) and a gate (not shown) for opening and closing the entrance.

[0133] The substrate support (3000) may be coupled to the process chamber (2000) to support the substrate (S) within the reaction space (B). For example, the substrate support (3000) may be installed in the process chamber (2000) facing the gas injection unit (4000). Furthermore, the substrate support (3000) may include a heater (not shown) for heating the substrates (S) therein. Since the substrate support (3000) is configured to place the substrate (S) thereon, it may also be called a substrate mounting unit, a susceptor, a substrate holder, etc.

[0134] The shape of the upper plate of the substrate support member (3000) generally corresponds to the shape of the substrate (S), but is not limited thereto, and may be provided in various shapes so as to stably secure the substrate (S). Furthermore, a shaft (2100) is connected to the upper plate of the substrate support member (3000), and the shaft (2100) may be connected to an external motor (not shown) so as to be able to rise and fall. Optionally, a means for maintaining airtightness, such as a bellows tube, may be connected between the shaft (2100) and the process chamber (2000).

[0135] In some embodiments, the substrate support (3000) may further include an electrostatic electrode (not shown) to apply an electrostatic force to the substrate (S) and secure it thereon. In this case, the electrostatic electrode may generate an electrostatic force using DC power.

[0136] The gas injection unit (4000) may be coupled to the process chamber (2000) to inject process gas supplied from the outside of the process chamber (2000) into the reaction space (B). For example, the gas injection unit (4000) may be coupled to the upper portion of the process chamber (2000) so as to face the substrate support unit (3000). The gas injection unit (4000) may supply process gas, such as a source gas, a reaction gas, an inert gas, etc., onto the substrate (S) within the reaction space (B).

[0137] In some embodiments, the gas injection unit (4000) may be understood as being coupled to the gas discharge plate (1300) to directly cover the process chamber (2000), coupled to the gas discharge plate (1300) and coupled to the process chamber (2000) through a chamber lid (2400), or may be understood as being coupled to the chamber lid (2400).

[0138] The plasma source assembly (1000) is for activating a process gas supplied from the outside, and the description of FIGS. 15 to 17 may be referred to. The plasma source assembly (1000) may be coupled to the process chamber (2000) facing the substrate support (3000).

[0139] For example, the plasma source assembly (1000) may be coupled to the process chamber (2000) through a gas discharge portion (1300) formed at the bottom, as shown in FIG. 18, or, the plasma source assembly (1000) may be coupled to the chamber lid (2400) through a gas discharge portion (1300) formed at the bottom, as shown in FIG. 19.

[0140] The plasma source assembly (1000) can supply an activated process gas, such as radicals, to its lower portion, for example, to the internal space of the gas injection unit (4000).

[0141] Fig. 20 is a schematic cross-sectional view showing a substrate processing device according to another embodiment of the present invention, and Fig. 21 is a schematic perspective view showing a plasma source assembly of the substrate processing device according to some embodiments of the present invention. The substrate processing device is obtained by adding or modifying some components from the substrate processing device of Fig. 18, and since the two embodiments can be referenced to each other, any redundant descriptions thereof will be omitted.

[0142] As illustrated in FIG. 20, the substrate processing device may include a process chamber (2000), a gas injection unit (4000), a substrate support unit (3000), and a plasma source assembly (1000).

[0143] The plasma source assembly (1000) is for activating a process gas supplied from the outside, and the description of FIG. 18 can be referenced. The plasma source assembly (1000) can be coupled to the process chamber (2000) facing the substrate support (3000). For example, the plasma source assembly (1000) can be directly coupled to the upper portion of the process chamber (2000), or can be coupled to a chamber lid (2400) covering the process chamber (2000). The plasma source assembly (1000) can supply an activated process gas, such as radicals, to a lower portion thereof, for example, an internal space of a gas injection unit (4000).

[0144] As illustrated in FIG. 21, the plasma source assembly (1000) may include a gas discharge plate (1300), a first plasma source (1100) coupled on the gas discharge plate (1300), and a second plasma source (1200) coupled on the gas discharge plate (1300) to surround the first plasma source (1100).

[0145] On the gas discharge plate (1300), a first plasma source (1100) and a second plasma source (1200) among plasma sources may be combined. In this case, the gas discharge plate (1300) may include a first source gas discharge hole (1310) corresponding to the first plasma source (1100) and a second source gas discharge hole (1320) corresponding to the second plasma source (1200).

[0146] The second plasma source (1200) may have substantially the same structure as the aforementioned plasma source, and thus reference may be made to the configuration and description of the plasma source.

[0147] The first plasma source (1100) may have a similar structure to the aforementioned plasma source, except that some of the components may be modified from the plasma source in that the diameter is smaller. For example, in the first plasma source (1100), the reaction body may be composed of one or two pieces instead of three, and accordingly, one or two magnetic cores may be provided.

[0148] For example, the first plasma source assembly (1100) may be arranged in a donut shape on the central portion, and the second plasma source assembly (1200) may be arranged on the edge portion in a donut structure of a larger diameter surrounding the donut structure of the first plasma source assembly (1100).

[0149] The first plasma source (1100) may be coupled to the gas discharge plate (1300) to supply an activated process gas to the gas discharge plate (1300). For example, the gas discharge hole (310) may be coupled to communicate with the first source opening (1115) of the first plasma source (1100), and the gas discharge plate (1300) may be formed to fit the shape of the first plasma source (1100).

[0150] The first plasma source (1100) may be provided with a first source opening (1115) through which a process gas activated through the first plasma source (1100) is discharged, and the second plasma source (1200) may be provided with a second source opening (1215) through which a process gas activated through the second plasma source (1200) is discharged.

[0151] The process gas activated in the first plasma source (1100) can be supplied to the gas discharge plate (1300) through the first source opening (1115), and the process gas activated in the second plasma source (1200) can be supplied to the gas discharge plate (1300) through the second source opening (1215).

[0152] In this way, by arranging a plurality of plasma sources, for example, a first plasma source (1100) and a second plasma source (1200), on a gas discharge plate (1300), the amount of emission of activated process gas, for example, radicals, can be controlled for each region. For example, the amount of radicals emitted from the first plasma source (1100) and the second plasma source (1200) can be controlled depending on the size and shape of the first source opening (1115) and the second source opening (1215).

[0153] In some embodiments, a source insulating member (1160, 1260) may be interposed between the first plasma source (1100), the second plasma source (1200), and the gas discharge plate (1300). Accordingly, noise currents such as ground current and leakage current can be prevented from being transmitted to the plasma source through the gas discharge plate (1300).

[0154] According to some embodiments, the first plasma source (1100) may receive process gas from the process gas supply device (5000) through the first gas pipe (5100), and the second plasma source (1200) may receive process gas through the second gas pipe (5200). This plasma source assembly (1000) enables the entirety of the central and peripheral portions of the gas injection unit (4000) to be injected with activated process gas.

[0155] In some embodiments, the gas injection unit (4000) may include a distribution plate (4100) for injecting an activated process gas supplied from the plasma source assembly (1000) into the reaction space (B). A plurality of injection holes may be formed in the distribution plate (4100) in a vertical direction. Optionally, the gas injection unit (4000) may further include a middle plate, such as a blocker plate, for injecting gas between the chamber lid (2400) and the distribution plate (4100).

[0156] In some embodiments, the gas injection unit (4000) may further include a separate gas inlet to supply process gas into the interior thereof without passing through the plasma source assembly (1000). In this case, the gas injection unit (4000) may supply process gas activated through the plasma source assembly (1000) and process gas inactivated without passing through the plasma source assembly (1000) together.

[0157] According to the plasma source assembly (1000), when the supply amount of the second plasma source (1200) is controlled to be greater than the supply amount of the first plasma source (1100), the supply amount of the process gas at the edge of the substrate (S) can be made higher than the supply amount at the center. This control of the supply amount of the process gas can compensate for the fact that the plasma density is relatively low at the edge of the substrate (S), thereby allowing the reaction to occur uniformly on the substrate (S).

[0158] The substrate processing device according to various embodiments of the present invention described above can be used as a thin film deposition device, such as an atomic layer deposition (ALD) device or a chemical vapor deposition (CVD) device.

[0159] According to the plasma source assembly of the present invention, since the body part (211) constituting the plasma source (200) has no fastening part other than the insulating part (216), no boundary surface is formed on the inner wall surrounding the gas diffusion space (214) formed inside the body part (211), so that the flow of the process gas is more uniform, the generation of particles at the boundary surface can be prevented, and the volume can be reduced due to the absence of the fastening part, or the area of ​​the gas diffusion space (214) can be increased.

[0160] According to the substrate processing device of the present invention, since the plasma source assembly (1000) is directly connected to the gas injection units (4000), an activated process gas, for example, radicals, can be directly supplied to the substrate (S), thereby reducing the supply path of radicals. Accordingly, when the plasma source assembly (1000) is used, the recombination of radicals can be reduced compared to when a conventional remote plasma device is used, thereby increasing the supply efficiency of radicals and thus enhancing process reliability.

[0161] In addition, according to the substrate processing device, a cooling medium flow portion (240) is formed within the plasma source assembly (1000), thereby controlling the temperature of the plasma source assembly (1000), thereby reducing plasma damage of the plasma source assembly (1000), and increasing substrate processing stability and process efficiency.

[0162] While the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely exemplary, and those skilled in the art will appreciate that various modifications and equivalent alternative embodiments are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. A reaction body formed by combining a plurality of body parts formed as a single member so that a gas diffusion space is formed inside and the inner surfaces of the gas diffusion spaces have mutually continuous surfaces, and at least one insulating part formed between the plurality of body parts is combined, and the gas diffusion spaces within the plurality of body parts are connected to each other to form a toroidal channel capable of activating a process gas in a closed loop shape as a whole; A magnetic core portion formed to surround at least a portion of the body portion; A winding part arranged to wind the magnetic core part and inducing a magnetic force within the magnetic core part by receiving power from the power supply part; and A cooling medium flow portion formed in at least a portion of the body portion so that the cooling medium can flow; A plasma source comprising:

2. In paragraph 1, The above cooling medium flow part is, A cooling groove formed in the above body portion; and A cover part covering the above cooling groove part; A plasma source comprising:

3. In paragraph 1, The body portion is formed with a first region having a first height and a first width and a second region having a second height and a second width, The above first height is greater than the above second height, The above first width is larger than the above second width, The magnetic core portion is arranged to surround the second region of the body portion, The above cooling medium flow portion is formed in the first region of the body portion, a plasma source.

4. In paragraph 3, The cooling medium flow portion is formed on at least one wall among the walls surrounding the body portion, A plasma source, wherein a refrigerant inlet connected to one end of the cooling medium flow portion and a refrigerant outlet connected to the other end of the cooling medium flow portion are formed in the above body portion.

5. In paragraph 1, A plasma source wherein the body portion is formed as a single member such that the inner surface of the cooling medium flow portion has a mutually continuous surface.

6. In paragraph 5, The above cooling medium flow part is, A plasma source formed in at least a portion of the body portion in a shape that at least partially surrounds the gas diffusion space.

7. In paragraph 5, The body portion is formed with a first region having a first height and a first width and a second region having a second height and a second width, The above first height is greater than the above second height, The above first width is larger than the above second width, A plasma source, wherein the magnetic core portion is arranged to surround the second region of the body portion.

8. In paragraph 7, The above cooling medium flow part is, A plasma source formed in a shape that at least partially surrounds the gas diffusion space in the first region.

9. In paragraph 7, The above cooling medium flow part is, A plasma source formed in a shape that at least partially surrounds the gas diffusion space in the second region.

10. In paragraph 1, At least one gas inlet is formed on the upper wall or side wall of the body portion, A plasma source having at least one opening formed in the lower wall of the body.

11. In paragraph 1, A plasma source, wherein a refrigerant inlet connected to one end of the cooling medium flow portion and a refrigerant outlet connected to the other end of the cooling medium flow portion are formed in the above body portion.

12. In paragraph 1, A gas discharge plate having a gas discharge hole formed therein so as to discharge an activated process gas downward from the reaction body, and the gas discharge hole being connected to the lower portion of the reaction body so as to be in communication with the at least one opening; A plasma source comprising:

13. In paragraph 12, The above gas discharge plate, A plasma source formed of insulating material.

14. In paragraph 12, A plasma source, wherein a source insulating member is bonded between the above reaction body and the above gas discharge plate.

15. A process chamber with a reaction space formed inside; A substrate support coupled to the lower portion of the process chamber to support the substrate within the reaction space; A plasma source assembly coupled to the upper portion of the process chamber and having at least one plasma source according to any one of claims 1 to 11; and A gas injection unit facing the substrate support and positioned below the plasma source assembly, wherein a gas injection plate is formed for injecting a process gas activated by the plasma source assembly onto the substrate support; Including, The above plasma source assembly, A gas discharge plate having a gas discharge hole formed therein so as to discharge the process gas downward; a first plasma source coupled to the gas discharge plate; and A second plasma source spaced outside the first plasma source and coupled to the gas discharge plate; Including, A substrate processing device, wherein the first plasma source is provided with a first opening through which a process gas activated by the first plasma source is discharged, and the second plasma source is provided with a second opening through which a process gas activated by the second plasma source is discharged.

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