Ceramic-based substrate and methods of cutting the same

Abstract

Methods of cutting a ceramic-based substrate that is polycrystalline with a thickness from 10 micrometers to 200 micrometers includes emitting a laser beam that impinges a target location on the surface of the ceramic-based substrate. The laser beam is translated relative to the ceramic-based substrate so that the target location translates along the surface at a translation speed from an initial target location to a final target location while impinging the laser beam at the target location. Methods cut the ceramic-based substrate as a result of thermal stresses generated by absorption of the laser beam by the ceramic-based substrate at the target location. In aspects, the ceramic-based substrate can have a porosity from greater than or equal to 0.1% to less than or equal to 40%. In aspects, a cut edge formed by the cutting between the first major surface and the second major surface is not melted.

Description

ATTORNEY DOCKET NO. SP24-043 CERAMIC-BASED SUBSTRATE AND METHODS OF CUTTING THESAME

[0001] This application claims the benefit of priority under 35 U.S.C. § 119 of U.S.Provisional Application Serial No. 63 / 562,369 filed on March 7, 2024, the content of which is relied upon and incorporated herein by reference in its entirety. FIELD

[0002] The present disclosure relates generally to ceramic-based substrates andmethods of cutting the same and, more particularly, to methods of cutting a ceramic-based substrate using a laser without ablation and the resulting ceramic-based substrate. BACKGROUND

[0003] Ceramic-based substrates can be used in batteries, solid-oxide fuel cells, solid-oxide electrolyzer cells, or as a device substrate for electronic devices, among other applications. Ceramic-based substrates need to be cut to a size appropriate for the particular application.

[0004] It is known to cut ceramic substrates by using mechanical means, for example,by scoring the ceramic-based substrate and / or using the bend-and-snap method. Also, it is known to cut ceramic substrates using ablation caused by a laser. However, the resulting cut edge can have noticeably asymmetric (e.g., inferior) edge strength than the other cut edges. Also, the cutting can proceed uncontrollably and / or produce cracks extending from the cut edge that can impair the strength and / or functionality of the substrate. Consequently, there exists a need to produce higher quality cut edges of ceramic-based substrates. SUMMARY

[0005] There are set forth herein methods of cutting a ceramic-based substrate.Methods can be reliably and controllably cut without the need for scoring or otherwise intentionally damaging (e.g., flaw generation) the ceramic-based substrate and without ablation of material of the ceramic-based substrate. Methods can use thermal stresses induced by a laser to cut polycrystalline ceramic-based substrates. For example, the ceramic-based substrate can have a sufficiently small median grain size (e.g., less than or equal to half of a laser beam spot discussed below, 0.5 mm or less, 0.1 mm or less, or from 0.1 µm to 60 µm) and / or a sufficiently high porosity (e.g., greater than or equal to 0.1%, from 0.1% to 40%, from 0.5% to 5%, or from 0.1% to 0.5%) that methods of present disclosure can reliably cut ceramic-based substrates at any arbitrary location.ATTORNEY DOCKET NO. SP24-043

[0006] Cutting the ceramic-based substrate can proceed along grain boundaries and / orporosity of the ceramic-based substrate. Without wishing to be bound by theory, it is believed that the cut edge is formed along grain boundaries and / or porosity of the ceramic-based substrate (e.g., grains) such that the resulting surface profile can be granular and / or mayresemble other as-sintered surfaces of the ceramic-based substrate. The cut edge can have aB10 edge strength that is unexpectedly improved relative to conventional methods of cutting ceramic-based substrates. Consequently, the B10 edge strength of the cut edge can be comparable to the B10 edge strength of the non-cut edge(s) (e.g., 85% to 100%, from 88% to 100%, from 90% to 99%, from 92% to 98%, or from 95% to 97% of the B10 edge strength of the non-cut edge).

[0007] The resulting cut edge can be unmelted and / or without excess grain growth,which can be an indication that the cut edge was not formed by ablation. Also, the cut edge may be free of cracks extending from the cut edge into the ceramic-based substrate, which can be an indication that the cut edge formed by controlled crack propagation (e.g., controlled fracture). Rather than using ablation or heating localized to the surface, methods of the present disclosure can use volumetric heating to cut the ceramic-based substrate. Providing an absorption coefficient from 0.001 cm-1to 1000 cm-1(e.g., from 0.01 cm-1to 100, from 0.1 cm-1to 5 cm-1) can efficiently heat the ceramic-based substrate through the thickness at the target location impinged by the laser beam. As discussed herein, methods can use volumetric heating (e.g., as opposed to heating localized to a surface of the ceramic-based substrate) of the ceramic-based substrate to facilitate controlled cutting of the ceramic-based substrate without ablation and / or melting of the ceramic-based substrate. The cute edge can be straight and exhibit flatness down to the level of the grain size, which may otherwise be unobtainable.

[0008] Some example aspects of the disclosure are described below with theunderstanding that any of the features of the various aspects may be used alone or in combination with one another.

[0009] Aspect 1. A method of cutting a ceramic-based substrate, the methodcomprising: emitting a laser beam comprising an optical wavelength from a laser source along a beam path towards the ceramic-based substrate; impinging the laser beam on a target location on a surface of the ceramic-based substrate;ATTORNEY DOCKET NO. SP24-043 translating the laser beam relative to the ceramic-based substrate so that the target location translates along the surface at a translation speed from an initial target location to a final target location while impinging the laser beam at the target location; and cutting the ceramic-based substrate as a result of thermal stresses generated by absorption of the laser beam by the ceramic-based substrate at the target location, wherein the ceramic-based substrate comprises a thickness from greater than or equal to 10 micrometers to less than or equal to 200 micrometers, and the ceramic-based substrate is polycrystalline.

[0010] Aspect 2. The method of aspect 1, wherein an absorption coefficient of theceramic-based substrate at the optical wavelength is from 0.001 per centimeter to less than 1000 per centimeter.

[0011] Aspect 3. The method of aspect 1, wherein the laser source generates aplurality of pulses, the laser beam comprising one or more of the plurality of pulses, a repetition rate of the plurality of pulses is from 10 Hertz to 1 MegaHertz.

[0012] Aspect 4. The method of any one of aspects 1-3, wherein the translation speedv in millimeters per second satisfies the following relationship: 0.5 x P / t ≤ v ≤ 1.0 x P / t, where P is a power of the laser source in Watts, and t is the thickness of the ceramic- based substrate in millimeters.

[0013] Aspect 5. The method of any one of aspects 1-4, wherein a total averagepower density impinging the initial target location is from 10 Watts per millimeter squared 100 Watts per millimeter squared.

[0014] Aspect 6. The method of aspect 5, wherein the cutting extends through thethickness of the ceramic-based substrate and separates the ceramic-based substrate in two parts, with each part having a cut edge formed by the cutting, the cut edge extending between a first major surface and a second major surface, and the surface impinged by the laser beam is the first major surface of the ceramic-based substrate.

[0015] Aspect 7. The method of aspect 6, wherein a B10 edge strength along the cutedge is greater than or equal to 85% of a B10 edge strength along another edge of the corresponding part formed from the ceramic-based substrate.

[0016] Aspect 8. The method of any one of aspects 6-7, wherein a surface roughnessRa of the cut edge formed by the cutting is within 50% of a surface roughness Ra of the first major surface of the corresponding part formed from the ceramic-based substrate.ATTORNEY DOCKET NO. SP24-043

[0017] Aspect 9. The method of any one of aspects 6-8, wherein the cutting is auto-initiated by the thermal stresses generated by absorption of the laser beam by the ceramic- based substrate at the target location, and the cut edge is not melted during the cutting.

[0018] Aspect 10. The method of any one of aspects 6-9, wherein the fracturepropagates along a grain boundary of the polycrystalline ceramic-based substrate, the fracture propagates along pores corresponding to a porosity of the polycrystalline ceramic-based substrate, or a combination thereof.

[0019] Aspect 11. The method of any one of aspects 1-9, wherein a porosity of theceramic-based substrate is from greater than or equal to 0.1% to less than or equal to 40%.

[0020] Aspect 12. The method of any one of aspects 1-11, a median grain size of thepolycrystalline ceramic-based substrate is less than or equal to 0.5 millimeters.

[0021] Aspect 13. The method of any one of aspects 1-11, wherein a maximumdimension of the laser beam at the target location is greater than or equal to 2 times a median grain size of the polycrystalline ceramic-based substrate.

[0022] Aspect 14. The method of any one of aspects 1-13, wherein, prior to theimpinging, the ceramic-based substrate has not been scored or otherwise intentionally damaged at the target location.

[0023] Aspect 15. The method of any one of aspects 1-14, wherein the opticalwavelength is from greater than or equal to 0.3 micrometers to less than or equal to 15 micrometers.

[0024] Aspect 16. The method of any one of aspects 1-15, wherein the laser source isa carbon dioxide laser.

[0025] Aspect 17. A ceramic-based substrate comprising:a thickness from greater than or equal to 10 micrometers to less than or equal to 200 micrometers between a first major surface and a second major surface; a porosity of the ceramic-based substrate is from greater than or equal to 0.1% to less than or equal to 40%; and a cut edge extending between the first major surface and the second major surface, wherein the ceramic-based substrate is polycrystalline.

[0026] Aspect 18. The ceramic-based substrate of aspect 17, wherein a B10 edgestrength along the cut edge is greater than or equal to 85% of a B10 edge strength along another edge of the ceramic-based substrate.ATTORNEY DOCKET NO. SP24-043

[0027] Aspect 19. The ceramic-based substrate of any one of aspects 17-18, wherein asurface roughness Ra of the cut edge is within 50% of a surface roughness Ra of the first major surface.

[0028] Aspect 20. The ceramic-based substrate of any one of aspects 17-18, whereinthe cut edge is not melted and the ceramic-based substrate is free of cracks extending from the cut edge into the ceramic-based substrate.

[0029] Throughout the disclosure, the drawings are used to emphasize certain aspects.As such, it should not be assumed that the relative size of different regions, portions, and substrates shown in the drawings are proportional to its actual relative size, unless explicitly indicated otherwise. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and other features and advantages of aspects of the presentdisclosure are better understood when the following detailed description is read with reference to the accompanying drawings, in which:

[0031] FIG. 1 schematically depicts a side view of a ceramic-based substrate with acut edge in accordance with aspects of the present disclosure;

[0032] FIG. 2 is an enlarged view 2 of FIG. 1 schematically illustrating porosity andgrain boundaries of the polycrystalline ceramic-based substrate;

[0033] FIG. 3 schematically depicts a cutting apparatus that can be used in anexemplary method of cutting a ceramic-based substrate in accordance with aspects of the present disclosure;

[0034] FIG. 4 is top view of the ceramic-based substrate being cut along line 4-4 ofFIG. 3 according to aspects of the present disclosure;

[0035] FIG. 5 schematically illustrates a laser beam spot translating from an initiallocation to a final location on the surface of the ceramic-based substrate to separate the ceramic-based substrate into two parts;

[0036] FIG. 6 schematically illustrates breaking strength (in MPa) on the horizontalaxis (e.g., x-axis) versus failure probability (%) on the vertical axis (e.g., y-axis) for a series of 40 micrometer (µm) thick yttria-stabilized zirconia (YSZ) having a cut in accordance with aspects of the present disclosure;

[0037] FIG. 7 schematically illustrates a relationship between a maximum cuttingspeed (in millimeters per second) on the vertical axis (e.g., y-axis) as a function of the laser power (in Watts) on the horizontal axis (e.g., x-axis); andATTORNEY DOCKET NO. SP24-043

[0038] FIG. 8 schematically illustrates a cut edge of a YSZ ceramic-based substrateas imaged using optical microscopy.

[0039] Throughout the disclosure, the drawings are used to emphasize certain aspects.As such, it should not be assumed that the relative size of different regions, portions, and substrates shown in the drawings are proportional to its actual relative size, unless explicitly indicated otherwise. DETAILED DESCRIPTION

[0040] Aspects will now be described more fully hereinafter with reference to theaccompanying drawings in which example aspects are shown. Whenever possible, the same reference numerals are used throughout the drawings to refer to the same or like parts. However, claims may encompass many different aspects of various aspects and should not be construed as limited to the aspects set forth herein.

[0041] FIGS. 1-2 illustrate schematic views of a ceramic-based substrate 101 and / or103 in accordance with aspects of the disclosure. FIGS. 3-5 illustrate schematic views of acutting apparatus used to illustrate methods of cutting a ceramic-based substrate in accordance with aspects of the disclosure. Unless otherwise noted, a discussion of features of aspects of one ceramic-based substrate and / or method of cutting the ceramic-based substrate can apply equally to corresponding features of any aspects of the disclosure. For example, identical part numbers throughout the disclosure can indicate that, in some aspects, the identified features are identical to one another and that the discussion of the identified feature of one aspect, unless otherwise noted, can apply equally to the identified feature of any of the other aspects of the disclosure.

[0042] As shown in FIG. 1, the ceramic-based substrate 101 and / or 103 cancomprise a first major surface 105 and a second major surface 107 opposite the first majorsurface 105. In aspects, the first major surface 105 can extend along a first plane, and / or thesecond major surface 205 can extend along a second plane. In further aspects, the secondplane (e.g., second major surface 107) can be parallel to the first plane (first major surface105). As used herein, a substrate thickness 109 of the ceramic-based substrate 101 is definedbetween the first major surface 105 and the second major surface 107 as an average distancetherebetween. In aspects, the substrate thickness 109 can be 10 micrometers (µm) or more, 20µm or more, 25 µm or more, 30 µm or more, 40 µm or more, 50 µm or more, 60 µm or more, 80 µm or more, 200 µm or less, 160 µm or less, 120 µm or less, 100 µm or less, 80 µm orless, 60 µm or less, 50 µm or less, or 40 µm or less. In aspects, the thickness 109 can be from10 µm to 200 µm, from 20 µm to 160 µm, from 25 µm to 120 µm, from 30 µm to 100 µm,ATTORNEY DOCKET NO. SP24-043 from 40 µm to 800 µm, from 60 µm to 100 µm, or any range or subrange therebetween. Inpreferred aspects, the thickness 109 can be from 10 µm to 200 µm or from 40 µm to 120 µm.The thickness 109 of the ceramic-based substrate 101 can be determined from a scanningelectron microscope (SEM) image of a cross-section of the ceramic-based substrate 101 (e.g.,with the view shown in FIG. 1).

[0043] In aspects, the ceramic-based substrate 101 and / or 103 can be polycrystalline.As used herein, “ceramic-based” includes both ceramics and glass-ceramics, wherein glass- ceramics have one or more crystalline phases and an amorphous, residual glass phase. Ceramic-based materials may be strengthened (e.g., chemically strengthened). In aspects, a ceramic-based material can be formed by heating a glass-based material to form ceramic (e.g., crystalline) portions. In further aspects, ceramic-based materials may comprise one or more nucleating agents that can facilitate the formation of crystalline phase(s). In further aspects, the ceramic-based material can consist essentially of crystalline phases (e.g., with less than 10%vol of an amorphous phase). In aspects, ceramic-based materials can comprise one or more oxides, nitrides, oxynitrides, carbides, borides, and / or silicides. Exemplary aspects of ceramics (e.g., crystalline phases) in the ceramic-based substrate include zirconia (ZrO2), alumina (Al2O3), yttria-stabilized zirconia (YSZ), scandia-stabilized zirconia (ScSZ), and lithium garnets. Lithium garnets include undoped lithium garnet (Li7La3Zr2O12 – LLZO) as well as doped lithium garnet (e.g., Li7-xLa3(Zr2-x, Mx)O12 where M is Al, Ga, In, Si, Ge, Sn, Sb, Bi, Sc, Y, Ti, Hf, V, Nb, Ta, W, or combinations thereof).

[0044] As shown in FIG. 2, the ceramic-based substrate 103 can be polycrystallinewith a plurality of crystal grains including grain 203a. As shown, the grain 203a can besurrounded by a grain boundary 204a positioned between the grain 203a and one or moreadjacent grains. Throughout the disclosure, a grain size of the scandia-stabilized zirconia grains is determined in accordance with ASTM E112-13. As such, a scanning electron microscope (SEM) image is taken of a cross-section of the ceramic-based substrate (e.g.,corresponding to the view shown in FIG. 2 or FIG. 8). For determining properties related tothe grain size distribution (e.g., minimum, maximum, mean, median), the SEM images was taken at 20,000 times magnification and at least 20% of the area in the SEM image isanalyzed to determine the grain size distribution. For example, a grain size 207 is shown forgrain 203a of the plurality of grains in FIG. 2. In aspects, a median grain size can be 0.5millimeters (mm) or less, 0.1 mm or less, 60 µm or less, 40 µm or less, 20 µm or less, 10 µm or less, 6 µm or less, 0.1 µm or more, 0.5 µm or more, 1 µm or more, 2 µm or more, 5 µm or more, 10 µm or more, 20 µm or more, 30 µm or more, or 40 µm or more. In aspects, aATTORNEY DOCKET NO. SP24-043 median grain size can be from 0.1 µm to 0.5 mm, from 0.5 µm to 0.1 mm, from 1 µm to 60 µm, from 2 µm to 40 µm, from 5 µm to 20 µm, from 5 µm to 10 µm, or any range or subrange therebetween. Providing a sufficiently small median grain size (e.g., less than or equal to half of a width of the laser beam spot discussed below, 0.5 mm or less, 0.1 mm or less, or from 1 µm to 60 µm) can enable methods of present disclosure can reliably cut ceramic-based substrates at any arbitrary location.

[0045] FIG. 2 also shows that the ceramic-based substrate 103 can comprise aplurality of pores including pores 205a and 205b. Throughout the disclosure, the porosity ofthe solid-state electrolyte sheet is determined in accordance with ASTM E1245-03. For example, the SEM image used for determining grain size can be reanalyzed to determine the number and size of pores. However, as used herein, the porosity is determined from SEM images at 5,000 times magnification, where at least 20% of each SEM image is analyzed, and the results of analyzing seven (7) SEM images are averaged to determine the porosity. In aspects, a porosity of the ceramic-based substrate can be 0.1% or more, 0.2% or more, 0.3% or more, 0.4% or more, 0.5% or more, 0.7% or more, 1% or more, 2% or more, 3% or more, 5% or more, 40% or less, 30% or less, 20% or less, 15% or less, 10% or less, 8% or less, 5% or less, 2% or less, 1% or less, 0.8% or less, or 0.5% or less. In aspects, a porosity of the ceramic-based substrate can be from 0.1% to 40%, from 0.2% to 30%, from 0.3% to 20%, from 0.4% to 15%, from 0.5% to 10%, from 0.7% to 8%, from 1% to 5%, from 2% to 5%, or any range or subrange therebetween. In aspects, the porosity can be less than or equal to 5%, for example, from 0.1% to 5%, from 0.2% to 2%, from 0.3% to 1%, from 0.4% to 1%, from 0.5% to 0.8%. In aspects, the porosity can be less than or equal to 0.5%, for example from 0.1% to 0.5% or from 0.2% to 0.5%. In preferred aspects, the porosity can be from 0.1% to 40%, from 0.5% to 5%, or from 0.1% to 0.5%. Providing a sufficiently high porosity (e.g., greater than or equal to 0.1%, from 0.1% to 40%, from 0.5% to 5%, or from 0.1% to 0.5%) methods of present disclosure can reliably cut ceramic-based substrates at any arbitrary location.

[0046] As shown in FIG. 1, the ceramic-based substrate 101 can comprise a cut edge111. FIG. 8 schematically illustrates a cut edge of a ceramic-based substrate (e.g., YSZ) asimaged using optical microscopy. In aspects, as shown in FIG. 1, the cut edge 111 can extendbetween (e.g., from) the first major surface 105 to the second major surface 107. Also, asshown, the cut edge 111 can occupy an entire side of an edge (e.g., entire cut edge 111 shownin FIG. 1) of the ceramic-based substrate 101. In aspects, the cut edge can be unmelted,which can be an indication that the cut edge was not formed by ablation. In aspects, the cutATTORNEY DOCKET NO. SP24-043 edge may be without excess grain growth (relative to a bulk of the ceramic-based substrate) that would otherwise be induced through the cutting process. In aspects, the cut edge may be free of cracks extending from the cut edge into the ceramic-based substrate, which can be an indication that the cut edge formed by controlled crack propagation (e.g., controlled fracture).In aspects, the cut edge can be essentially “featureless.” For example, as shown in FIG. 8, thecut edge is unmelted, exhibits porosity (e.g., comparable to the rest of the ceramic-based substrate), and does not show signs of deformation.

[0047] As used herein, the surface profile is measured over a test area of 10 µm by 10µm as measured using a confocal laser scanning microscope, which is used to characterize the major surfaces of the solid-state electrolyte using parameters defined in ISO 4287:1997. As used herein, surface roughness Ra is calculated as an arithmetical mean of the absolute deviation of a surface profile from an average position. As used herein, Ra is measured using a VK-X250 (Keyence) laser scanning microscope. Throughout the disclosure, the phrase “within X of Y” means that a value is Y±X (e.g., within 50% of 2 nm means 2 nm ± 50% =from 1 nm to 3 nm). In aspects, a surface roughness Ra of the cut edge 111 can be within50%, within 40%, within 30%, within 20%, or within 10% of the surface roughness Ra of thefirst major surface 105. In further aspects, the surface roughness Ra of the cut edge 111 canbe less than or equal to the surface roughness Ra of the first major surface 105. Withoutwishing to be bound by theory, it is believed that the cut edge is formed along grain boundaries and / or porosity of the ceramic-based substrate (e.g., grains) such that the resulting surface profile can be granular and / or may resemble other as-sintered surfaces of the ceramic- based substrate.

[0048] Throughout the disclosure, “edge strength” is measured using a Two-PointBend test. In the Two-Point Bend test, the samples were stressed at a constant rate of 250 MPa / sec until failure and as otherwise described in S. T. Gulati, J. Westbrook, S. Carley, H. Vepakomma, and T. Ono, “45.2: Two point bending of thin glass substrates,” in SID Conf., 2011, pp. 652–654. The environment was controlled at 50% relative humidity and 25° C. In accordance with this protocol, bending forces are applied to the ends of the ceramic-based substrate by placing the ceramic-based substrate between a pair of rigid stainless-steel parallel plates and decreasing the distance therebetween. This causes the ceramic-based substrate to adopt a bent configuration characterized by an effective radius R equal to half thedistance between the stainless-steel parallel plates. In general, tensile stresses are generated atthe surface on the outside of the bent configuration while compressive stresses are generated at the surface on the inside of the bent configuration. The stresses are increased until failureATTORNEY DOCKET NO. SP24-043 of the ceramic-based substrate. As used herein, the terms “fail,” “failure” and the like refer to breakage, destruction, delamination, crack propagation or other mechanisms that leave the stack assemblies, glass articles, and glass elements of this disclosure unsuitable for theirintended purpose. The bend strength σ is calculated from the effective radius R at failureusing the relationship: σ = 1.198 E h / (2 R - h), where E is the Young’s modulus of theceramic-based substrate and h is the substrate thickness 109 of the ceramic-based substrate.Throughout the disclosure, the Young’s modulus (e.g., elastic modulus) of the ceramic-based substrate is measured using the resonant ultrasonic spectroscopy technique set forth in ASTM E2001-13, titled “Standard Guide for Resonant Ultrasound Spectroscopy for Defect Detection in Both Metallic and Non-metallic Parts.” Throughout the disclosure Poisson’s ratio is measured using ISO 527-1:2019.

[0049] As used herein, the bend strength is attributed to the edge extending along thebent configuration (i.e., extending from one of the parallel plates to the other parallel plate). Consequently, for a sample with a quadrilateral shape, the bend strength of the cut edge is measured when either (or both) of the edges extending along the bent configuration is the cut edge; and the bend strength is not attributed to the cut edge when neither of the edges extending along the bent configuration is the cut edge. Based on a series of measured bend strengths for at least 12 samples, a Weibull distribution can be fit to the data. For example,FIG. 6 shows a Weibull distribution with center 607 and 95% confidence intervals 609a and609b fit to data points 605 from measured bend strengths attributed to the cut edge, whereFIG. 6 shows “breaking strength” corresponding to edge strength (i.e., at failure) in MPa onthe horizontal axis 601 (i.e., x-axis) and failure probability on the non-linear vertical axis 603(i.e., y-axis). Throughout the disclosure, the “B10 edge strength” of the substrate is the mean stress of failure of the substrate where 10% of the samples are expected to fail. Without wishing to be bound by theory, the edge strength of non-cut edges is generally greater than the edge strength of cut edges. In conventional methods of cutting ceramic-based substrates, the B10 edge strength for the cut edge can be 60% or less (e.g., 40%) of the B10 edge strength of a non-cut edge. However, ceramic-based substrates with a cut edges produced in accordance with methods of the present disclosure can have an edge strength closer to that of a non-cut edge that has previously been possible. In aspects, a B10 edge strength of the cut edge (e.g., along the cut edge) is greater than or equal to 85% of, greater than or equal to 88% of, greater than or equal to 90% of, greater than or equal to 92% of, greater than or equal to 95% of, or substantially equal to a B10 edge strength of another, non-cut edge (e.g., along another, non-cut edge) of the corresponding part (e.g., ceramic-based substrate) formed inATTORNEY DOCKET NO. SP24-043 accordance with methods of the present disclosure. In aspects, the B10 edge strength of the cut edge (e.g., along the cut edge) as a percentage of the B10 edge strength of another, non- cut edge (e.g., along the another non-cut edge) of the same sample can be from 85% to 100%, from 88% to 100%, from 90% to 99%, from 92% to 98%, from 95% to 97%, or any range or subrange therebetween.

[0050] The ceramic-based substrates of the present disclosure can be used in a varietyof products, including batteries (e.g., solid-state batteries, for example, as a cathode and / or as a solid-state electrolyte), solid-oxide fuel cells, solid-oxide electrolyzer cells, as device substrates for electronic devices (e.g., 5G telecommunication devices, piezoelectric sensors), as an alignment sleeve in optical fiber connectors, and / or as insulation or a thermal barrier. Electronic products can include a display (e.g., a liquid crystal display (LCD), an electrophoretic display (EPD), an organic light-emitting diode (OLED) display, or a plasma display panel (PDP)). Electronic products can include consumer electronic products, for example, a smartphone, a tablet, a wearable device (e.g., watch and / or fitness tracker), or a laptop. More generally, electronic products using the ceramic-based substrate can include mobile phones, tablets, computers, navigation systems, wearable devices, architectural articles, transportation articles (e.g., automotive, trains, aircraft, sea craft, etc.), and appliance articles.

[0051] Aspects of methods of cutting a ceramic-based substrate in accordance withaspects of the disclosure will be discussed with reference to the example method stepsillustrated in FIGS. 3-5. Methods include emitting a laser beam from a laser beam source thatimpinges the ceramic-based substrate to be cut at a target location that is translated from an initial location to a final location. Absorption of the laser beam can cause volumetric heating (e.g., as opposed to heating localized to a surface of the ceramic-based substrate) in the ceramic-based substrate at locations impinged by the laser beam source that, in turn, generate thermal stresses that cause the cutting of the ceramic-based substrate.

[0052] Methods can start with providing a ceramic-based substrate 341 (see FIG. 3).In aspects, the ceramic-based substrate 341 may be provided by purchase or otherwiseobtaining the ceramic-based substrate or by forming the ceramic-based substrate. In even further aspects, the ceramic-based substrate can be formed by heating a glass-based substrate to crystallize one or more ceramic crystals, where the initial glass-based substrate can be formed with a variety of ribbon forming processes, for example, slot draw, down-draw, fusion down-draw, up-draw, press roll, redraw, or float. Alternatively, in even further aspects, the ceramic-based substrate can be formed by sintering a ceramic green body (e.g., green tapeATTORNEY DOCKET NO. SP24-043of ceramic formed by tape casting). The thickness of the ceramic-based substrate 341(although not shown) can be within one or more of the ranges discussed above for thesubstrate thickness 109. Also, as discussed above, the ceramic-based substrate 341 ispolycrystalline and can comprise a porosity and / or a median grain size within one or more of the corresponding ranges discussed above.

[0053] As shown in FIG. 3, a cutting apparatus 301 comprising a laser source 311that can be used for cutting a ceramic-based substrate 341 in accordance with aspects of thepresent disclosure. The laser source 311 is configured to emit a laser beam 313 comprising aoptical wavelength. In aspects, the optical wavelength can be 0.3 µm or more, 0.5 µm or more, 0.7 µm or more, 1 µm or more, 2 µm or more, 3 µm or more, 5 µm or more, 8 µm or more, 10 µm or more, 15 µm or less, 13 µm or less, 12 µm or less, 11 µm or less, 10 µm or less, 6 µm or less, 4 µm or less, 2 µm or less, 1 µm or less, or 0.8 µm or less. In aspects, the optical wavelength can be from 0.3 µm to 15 µm, from 0.5 µm to 13 µm, from 0.7 µm to 10 µm, from 1 µm to 6 µm, from 2 µm to 4 µm, or any range or subrange therebetween. In aspects, use of a visible (and / or near-visible) optical wavelengths (e.g., from 0.3 µm to 1 µm, from 0.5 µm to 0.7 µm) can rely on non-linear absorption to heat (and cut) the substrate. Alternatively, use of infrared optical wavelengths can cause heating primarily through linear absorption. For example, the optical wavelength can be in the infrared band, for example, in a range from 3 µm to 15 µm, from 5 µm to 14 µm, from 8 µm to 13 µm, from 10 µm to 12 µm, or any range or subrange therebetween. An exemplary aspect of the laser beam comprises an optical wavelength of about 10.6 µm, for example, corresponding to a laser beam emitted from a carbon dioxide (CO2) laser or a carbon monoxide (CO) laser. An exemplary aspect of the laser source is a carbon dioxide laser. It is to be understood that any type of laser configured to emit a laser beam with an optical wavelength in one or more of the ranges discussed above in this paragraph can be used, for example, a gas laser, an excimer laser, a dye laser, or a solid-state laser. Some laser diodes can represent exemplary aspects because of their size, tunable output power, and ability to operate at room temperature (i.e., 20°C to 25°C).

[0054] As used herein, an “absorption coefficient” refers to the linear absorption asdescribed by the Beer-Lambert Law. The “absorption coefficient” is calculated for a material at a predetermined optical wavelength is calculated based on measured attenuation of a laser beam having the predetermined optical wavelength through a sample of the material having a thickness of at least 10 µm. In aspects, an absorption coefficient of the ceramic-based substrate at the optical wavelength of the laser beam emitted from the laser source can beATTORNEY DOCKET NO. SP24-043 0.001 per centimeter (cm-1) or more, 0.01 cm-1or more, 0.1 cm-1or more, 0.2 cm-1or more, 0.4 cm-1or more, 0.6 cm-1or more, 0.8 cm-1or more, 1000 cm-1or less, 100 cm-1or less, 20 cm-1or less, 10 cm-1or less, 5 cm-1or less, 2 cm-1or less, 1 cm-1or less, 0.8 cm-1or less, 0.6 cm-1or less, 0.4 cm-1or less, 0.3 cm-1or less, 0.1 cm-1or less, or 0.01 cm-1or less. aspects, an absorption coefficient of the ceramic-based substrate at the optical wavelength of the laser beam emitted from the laser source can be from 0.001 cm-1to 1000 cm-1, from 0.01 cm-1to 100 cm-1, from 0.1 cm-1to 50 cm-1, from 0.2 cm-1to 20 cm-1, from 0.4 cm-1to 10 cm-1, from 0.6 cm-1to 5 cm-1to, from 0.8 cm-1to 2 cm-1, or any range or subrange therebetween. In aspects, an absorption coefficient of the ceramic-based substrate at the optical wavelength of the laser beam emitted from the laser source can be less than 1 cm-1, for example, from 0.001 cm-1to 0.8 cm-1, from 0.01 cm-1to 0.6 cm-1, from 0.1 cm-1to 0.4 cm-1, from 0.2 cm-1to 0.3 cm-1, or any range or subrange therebetween. Providing an absorption coefficient from 0.001 cm-1to 1000 cm-1(e.g., from 0.01 cm-1to 100, from 0.1 cm-1to 10 cm-1) can efficiently heat the ceramic-based substrate through the thickness at the target location impinged by the laser beam. As discussed herein, methods can use volumetric heating (e.g., as opposed to heating localized to a surface of the ceramic-based substrate) of the ceramic-based substrate to facilitate controlled cutting of the ceramic-based substrate without ablation and / or melting ofthe ceramic-based substrate. As shown by dashed line 317 in FIG. 3, a non-zero intensity ofthe laser beam can extend into the ceramic-based substrate 341 to be absorbed by and heat avolume (e.g., bulk) of the ceramic-based substrate corresponding to the target location 331.The absorption coefficient stated above can be inflated relative to the actual absorption of the material due to reflections and / or scattering at grain boundaries and / or porosity, especially when these features are on the same order of magnitude as the optical wavelength of the laser beam. A corrected absorption coefficient (excluding reflections and / or scattering) can be from 0.001 cm-1to 0.8 cm-1, from 0.01 cm-1to 0.6 cm-1, from 0.1 cm-1to 0.4 cm-1, from 0.2 cm-1to 0.3 cm-1, or any range or subrange therebetween.

[0055] In aspects, the laser source 311 may comprise an ultrafast laser that cangenerate a plurality of pulses, for example, with a pulse width of from 10-12to 10-15seconds. Alternatively (e.g., with an infrared laser) the pulse width can be longer, for example, from 10-6to 10-2seconds (1 µs to 10 ms). As discussed above, in aspects, a combination of linear absorption and non-linear absorption may occur at the power density used, which can heat and cut the substrate. In aspects, a repetition rate of the laser source for the plurality of pulses can be 10 Hertz (Hz) or more, 100 Hz or more, 1 kiloHertz (kHz) or more, 5 kHz or more, 10 kHz or more, 15 kHz or more, 20 kHz or more, 50 kHz or more, 1 MegaHertz (MHz) or less,ATTORNEY DOCKET NO. SP24-043 500 kHz or less, 200 kHz or less, 100 kHz or less, 70 kHz or less, 50 kHz or less, or 30 kHz or less. In aspects, the repetition rate of the laser source for the plurality of pulses can be from 10 Hz to 1 MHz, from 100 Hz to 500 kHz, from 1 kHz to 200 kHz, from 5 kHz to 100 kHz, from 10 kHz to 70 kHz, from 15 kHz to 50 kHz, from 20 kHz to 30 kHz, or any range or subrange therebetween. In aspects the laser source can be operated with a power from 5 Watt to 100 Watts, from 6 Watts to 50 Watts, from 7 Watts to 30 Watts, from 8 Watts to 25 Watts, from 9 Watts to 20 Watts, or from 10 Watts to 15 Watts, or any range or subrange therebetween.

[0056] In aspects, a pulse energy of a pulse of the plurality of pulses can be 1microJoule (µJ) or more, 10 µJ or more, 20 µJ or more, 50 µJ or more, 100 µJ or more, 200 µJ or more, 500 µJ or more, 1 milliJoule (mJ) or more, 2 mJ or more, 100 mJ or less, 50 mJ or less, 20 mJ or less, 10 mJ or less, 5 mJ or less, 2 mJ or less, 1 mJ or less, 800 µJ or less, 500 µJ or less, or 200 µJ or less. In aspects, a pulse energy of a pulse of the plurality of pulses can be from 1 µJ to 100 mJ, from 10 µJ to 50 mJ, from 20 µJ to 20 mJ, from 50 µJ to 10 mJ, from 100 µJ to 5 mJ, from 200 µm to 2 mJ, from 500 µJ to 1 mJ, or any range or subrange therebetween. In preferred aspects, the pulse energy can be from 1 µJ to 100 mJ, from 100 µJ to 10 mJ, or from 500 µJ to 5 mJ.

[0057] In aspects, as shown in FIG. 3, the cutting apparatus 301 can comprise amirror 323 comprising a reflective surface 325 configured to direct the laser beam 313towards the ceramic-based substrate. In further aspects, the mirror 323 can be rotated aboutan axis 327 (e.g., by a motor) in directions 329 to translate (e.g., in corresponding direction315 and / or direction 319) a target location 331 on the ceramic-based substrate (e.g., firstmajor surface 105) impinged by the laser beam 313. Also, although not shown by the view inFIG. 3, the mirror can direct the laser beam in a direction perpendicular to the direction 319in addition to the direction 319 (e.g., to direct the laser beam to impinge any location on thefirst major surface 105 of the ceramic-based substrate 341). Additionally, although notshown, it is to be understood that one or more optics can be positioned along the beam pathtravelled by the laser beam 313, for example to focus the laser beam, control a location of afocal point, and / or control a shape of the laser beam. Alternatively, although not shown, thelaser source 311 can be configured to emit a laser beam at the ceramic-based substratewithout being redirected by a reflective surface.

[0058] As shown in FIG. 3, the ceramic-based substrate 341 can be positioned on anouter surface 305 of a stage 303. In aspects, as shown in FIGS. 3-4, the stage 303 cantranslate the ceramic-based substrate 341 in a direction 307 (e.g., to translate the targetATTORNEY DOCKET NO. SP24-043location 331 in the direction 319) and / or in a direction 309 perpendicular to the direction 307.Alternatively, the stage 303 can be stationary during the cutting. In aspects, although notshown, the stage can include one more grooves. For example, the one or more grooves can correspond to a predetermined cutting path to protect the stage and / or to facilitate cutting. Also, the one or more grooves can assist with alignment and / or orientation of the ceramic-based substrate 341 to be cut.

[0059] Methods of cutting the ceramic-based substrate 341 comprises emitting thelaser beam 313 (e.g., plurality of pulses) from the laser source 311 to travel along a beampath and impinging a target location 331 on a surface (e.g., first major surface 105) of theceramic-based substrate. As discussed above, the laser beam 313 is partially absorbed at thesurface (e.g., first major surface 105) while additional absorption of at least some of theenergy of the laser beam 313 is absorbed by the bulk of the ceramic-based substrate 103, asindicated by dashed line 317, for example, to produce volumetric heating corresponding tothe target location 331. Also, as shown in FIGS. 3-5, the target location 331 and / or 501 canbe translated (e.g., in direction 319) relative to the ceramic-based substrate 341. In furtheraspects, as shown in FIG. 5, the target location can start at an initial location 501 andtranslate in the direction 319 to a final location 521, for example, along path 403 includingintermediate location 511 (and the laser beam having beam spots 505, 515, and 525 at therespective locations). In even further aspects, as shown in FIG. 5, the initial location 501 cancorrespond to a location on the first major surface 105 at one end of the ceramic-basedsubstrate and the final location can correspond to a location on the first major surface 105 atan opposite end of the ceramic-based substrate, such that the method cuts the ceramic-basedsubstrate into two parts. In further aspects, cutting the ceramic-based substrate 341 can beaccomplished by a single scan of the target location along path 403.

[0060] In aspects, the target location impinged by the laser beam can be translated ata speed of 100 mm / s or more, 150 mm / s or more, 180 mm / s or more, 200 mm / s or more, 220 mm / s or more, 240 mm / s or more, 500 mm / s or less, 400 mm / s or less, 350 mm / s or less, 300 mm / s or less, 280 mm / s or less, 260 mm / s or less, 240 mm / s or less, or 200 mm / s or less. In aspects, the target location impinged by the laser beam can be translated at a speed from 100 mm / s to 500 mm / s, from 150 mm / s to 400 mm / s, from 180 mm / s to 350 mm / s, from 200 mm / s to 300 mm / s, from 220 mm / s to 280 mm / s, from 240 mm / s to 260 mm / s, or any range or subrange therebetween. Methods of the present disclosure can quickly and reliably cut ceramic-based substrates.ATTORNEY DOCKET NO. SP24-043

[0061] In aspects, a speed “v” that the laser beam is translated at and / or a speed atwhich the ceramic-based substrate in a controlled, consistent, and reliable manner without warpage, uncontrolled cracking, or excess grain growth can be a function of the power “P” that the laser is operated at and the substrate thickness “t”. When the power P is too high, uncontrolled cutting, excess cracking, warpage, and / or excess grain growth can occur. When the power P is too low (for a predetermined speed v and substrate thickness t), the ceramic- based substrate may not be reliably cut. When the substrate thickness is too small (for a predetermined speed v and power P), the ceramic-based substrate may be warped as a result of the thermal stresses generated. When the substrate thickness is too high (for a predetermined speed v and power P), the ceramic-based substrate may not be reliably cut. Consequently, a process window where the ceramic-based substrate is cut in a controlled, consistent, and reliable manner (e.g., without warpage, uncontrolled cracking, or excess grain growth) can have a speed (mm / s), as a factor of P / t (W / mm), that is greater than or equal to 0.5 mm2 / Ws, greater than or equal to 0.55 mm2 / Ws, greater than or equal to 0.6 mm2 / Ws, greater than or equal to 0.65 mm2 / Ws, greater than or equal to 0.7 mm2 / Ws, greater than or equal to 0.72 mm2 / Ws, greater than or equal to 0.75 mm2 / Ws, greater than or equal to 0.77 mm2 / Ws, greater than or equal to 0.80 mm2 / Ws, greater than or equal to 0.82 mm2 / Ws, greater than or equal to 0.85 mm2 / Ws, less than or equal to 1.0 mm2 / Ws, less than or equal to 0.97 mm2 / Ws, less than or equal to 0.95 mm2 / Ws, less than or equal to 0.92 mm2 / Ws, less than or equal to 0.90 mm2 / Ws, less than or equal to 0.88 mm2 / Ws, less than or equal to 0.85 mm2 / Ws, less than or equal to 0.82 mm2 / Ws, less than or equal to 0.8 mm2 / Ws, or less than or equal to 0.78 mm2 / Ws. In aspects, the speed (mm / s), as a factor of P / t (W / mm), can be from 0.5 mm2 / Ws to 1.0 mm2 / Ws, from 0.55 mm2 / Ws to 0.97 mm2 / Ws, from 0.6 mm2 / Ws to 0.95 mm2 / Ws, from 0.65 mm2 / Ws to 0.92 mm2 / Ws, 0.7 mm2 / Ws to 0.9 mm2 / Ws, from 0.72 mm2 / Ws to 0.88 mm2 / Ws, from 0.75 mm2 / Ws to 0.85 mm2 / Ws, from 0.77 mm2 / Ws to 0.82 mm2 / Ws, from 0.80 mm2 / Ws to 0.82 mm2 / Ws, or any range or subrange therebetween. In preferred aspects, the speed mm / s), as a factor of P / t (W / mm), can be from 0.5 mm2 / Ws to 1.0 mm2 / Ws, from 0.7 mm2 / Ws to 0.9 mm2 / Ws, or from 0.75 mm2 / Ws to 0.85 mm2 / Ws. It is to be understood that further refinement of the process window can be determined as a function of the beam spot size, with smaller beam spots associated with higher cutting speeds. For example, the process window may vary (e.g., within these ranges) depending on the absorption coefficient of the ceramic-based substrate.

[0062] FIG. 7 shows the maximum cutting speed in mm / s on the vertical axis 703(e.g., y-axis) as a function of laser power in Watts on the horizontal axis 701 (e.g., x-axis). AsATTORNEY DOCKET NO. SP24-043shown, a series of points 705 are plotted corresponding to the maximum speed at which aYSZ ceramic-based substrate can be reliably cut for a particular substrate thickness. Line 707is fit to the series of points 705. The slope of the line is between 0.9 mm2 / Ws x P / t and 1.0mm2 / Ws x P / t discussed in the previous paragraph.

[0063] In aspects, a total average power density for the laser beam at a location on thesurface of the ceramic-based substrate for the cutting process that the target location passes through can be 10 Watts per square millimeter (W / mm2) or more, 20 W / mm2or more, 40 W / mm2or more, 60 W / mm2or more, 100 W / mm2or less, 70 W / mm2or less, 50 W / mm2or less, or 30 W / mm2or less. In aspects, a total average power density at a location on the surface of the ceramic-based substrate that the target location passes through can be from 10 W / mm2to 100 W / mm2, from 20 W / mm2to 70 W / mm2, from 40 W / mm2to 50 W / mm2, or any range or subrange therebetween.

[0064] Returning to FIGS. 3, the absorption of the laser beam 313 at the surface (e.g.,first major surface 105) and by the bulk (as indicated by dashed line 317 in FIG. 3) cangenerate thermal stresses in the ceramic-based substrate 341. Initially, the thermal stresses(from heating) can generate compressive stresses at locations corresponding to the targetlocation 331, for example, due to thermal expansion of the material. As the heat diffuses inthe ceramic-based substrate, the target location can cool with the resulting temperature difference not corresponding to tensile stress maximized at locations corresponding to thetarget location 331 (e.g., along beam path 403 in FIGS. 4-5). The tensile stress (ultimatelyinduced by absorption of the laser beam) can result in cutting the ceramic-based substrate 341along the beam path 403 shown in FIGS. 4-5. For example, the cutting may result incontrolled fracture of the substrate that proceeds along grain boundaries and / or porosity ofthe ceramic-based substrate. As shown in FIG. 4, a cutting (e.g., fracture 413) of the ceramic-based substrate can proceed along the path 403 following the target location 331 currentlyimpinged by the laser beam (e.g., beam spot 405). Since the cutting (e.g., fracture 413) of theceramic-based substrate 341 proceeds due to thermal stresses, methods may not ablate and / ormelt material (e.g., at the target location 331).

[0065] In aspects, methods can cut a ceramic-based substrate 341 that has not beenscored and / or otherwise intentionally damaged. The inventor of the present disclosure has unexpected discovered that ceramic-based substrates (within the scope of the present disclosure) can be reliably and controllably cut without the need for scoring or otherwise intentionally damaging (e.g., flaw generation) the ceramic-based substrate and without ablation of material of the ceramic-based substrate. In this way, methods of present disclosureATTORNEY DOCKET NO. SP24-043 can be described as “auto-initiating” since an initial scoring and / or intentional damaging of the ceramic-based substrate is not required before the laser beam impinges the ceramic-based substrate at the initial location of the target location. Additionally, beyond the results ofimpinging the laser beam on the target location(s) (e.g., along path 403 including the cuttingfrom the resulting thermal stresses), the ceramic-based substrate may not be scored and / or otherwise intentional damaged during the cutting. As discussed above, the ceramic-based substrate is polycrystalline and can comprise a porosity and / or a median grain size within one or more of the corresponding ranges discussed above. Providing the polycrystalline ceramic- based substrate with a porosity (e.g., from 0.1% to 40%) and / or median grain size (less than or equal to half of a width of laser beam spot discussed below, 0.5 mm or less, 0.1 mm or less, or from 1 µm to 60 µm) can enable methods of present disclosure can reliably cause auto-initiation of the cutting to cut the ceramic-based substrate.

[0066] Throughout the disclosure, a laser beam spot refers to the area impinged by thelaser beam with an intensity of 1 / e2of a maximum intensity at the target location when thelaser beam is centered at a target location. For example, as shown in FIG. 4, laser beam spot405 corresponds to an area of the first major surface 105 impinged by the laser beam with anintensity of 1 / e2 of a maximum intensity at the target location 331 when the laser beam iscentered at the target location 331. As used herein, a width of a laser beam spot refers to amaximum dimension of the laser beam spot perpendicular to a local direction of the path thatthe target location translates along during the cutting. For example, as shown in FIG. 4, awidth 407 of the laser beam spot 405 is a maximum dimension of the laser beam spot 405 inthe direction 309 that is perpendicular to the direction 307 (e.g., corresponding to the localdirection) of the path 403 that that target location 331 translates along (to later form a laserbeam spot 415). In aspects, the width 407 of the laser beam spot 405 can be 10 µm or more,50 µm or more, 100 µm or more, 150 µm or more, 200 µm or more, 250 µm or more, 300 µm or more, 350 µm or more, 5 mm or less, 2 mm or less, 1 mm or less, 800 µm or less, 600 µm or less, 500 µm or less, 400 µm or less, 350 µm or less, or 300 µm or less. In aspects, thewidth 407 of the laser beam spot 405 can be from 10 µm to 5 mm, from 50 µm to 2 mm, from50 µm to 1 mm, from 100 µm to 800 µm, from 100 µm to 600 µm, from 150 µm to 500 µm, from 200 µm to 400 µm, from 250 µm to 350 µm, from 300 µm to 350 µm, or any range orsubrange therebetween. In further aspects, the width 407 of the laser beam spot 405 can be100 µm or more, for example, from 100 µm to 1 mm, from 150 µm to 600 µm, from 200 µm to 500 µm, from 250 µm to 400 µm , from 300 µm to 350 µm, or any range or subrange therebetween. As discussed above, providing a width of the laser beam spot greater than orATTORNEY DOCKET NO. SP24-043 equal twice the median grain size of the ceramic-based substrate can reliably cause auto- initiation of the cutting to cut the ceramic-based substrate within the laser beam spot (e.g., at an initial location of the target location).

[0067] Cutting the ceramic-based substrate in accordance with methods of the presentdisclosure can produce a cut edge exhibiting one or more of the aspects discussed above for the cut edge. For example, in aspects, the cut edge may be free of cracks extending from the cut edge into the ceramic-based substrate, which can be an indication that the cut edge formed by controlled crack propagation (e.g., controlled fracture). In aspects, the cut edge canbe essentially “featureless.” In aspects, a surface roughness Ra of the cut edge 111 can bewithin 50%, within 40%, within 30%, within 20%, or within 10% of the surface roughnessRa of the first major surface 105. In further aspects, the surface roughness Ra of the cut edge111 can be less than or equal to the surface roughness Ra of the first major surface 105. Inaspects, the B10 edge strength of the cut edge (e.g., along the cut edge) as a percentage of the B10 edge strength of another, non-cut edge (e.g., along the another non-cut edge) of the same sample can be from 85% to 100%, from 88% to 100%, from 90% to 99%, from 92% to 98%, from 95% to 97%, or any range or subrange therebetween.

[0068] FIG. 8 schematically illustrates a cut edge of a ceramic-based substrateproducing using methods in accordance with the present disclosure, as imaged using opticalmicroscopy. As shown, the cut edge 801 exhibits porosity 803, which was comparable to therest of the ceramic-based substrate (not shown). Also, the cut edge is unmelted, does not exhibit excess grain growth, and does not show signs of deformation.

[0069] In aspects, methods in accordance with aspects of the disclosure may consistof the steps discussed above. For example, the foldable substrate may not be further treated between one or more (or even all of) the steps described above. EXAMPLES

[0070] Various aspects will be further clarified by the following examples. ExamplesA-C demonstrate the ability of methods in accordance with the present disclosure to controllably cut ceramic-based substrates. Unless otherwise indicated, all examples were cut using a 13 Watt CO2 laser (e.g., 10.6 µm optical wavelength) operated with a repetition rate of 20 kHz. The laser beam spot on the example ceramic-based substrates had a beam width of 320 µm. The ceramic-based substrates comprised dimensions of the first major surface of 40 mm by 100 mm, where the ceramic-based substrate was cut into two pieces (also ceramic- based substrates) having dimensions of 20 mm by 100 mm. Also, the surface roughness Ra ofATTORNEY DOCKET NO. SP24-043 the cut edge was 15 nm, which was comparable to the surface roughness Ra of the first major surface.

[0071] Example A comprised a ceramic-based substrate comprising yttria-stabilizedzirconia (YSZ) having 3 mol% yttria (3YSZ). The 3YSZ had a median grain size of 0.25 µm. Samples of Example A having a thickness of 40 µm were controllably cut with the laser translating at a speed of 240 mm / s.

[0072] The edge strength of the cut edge for a series of samples of Example A havinga thickness of 40 µm were measured with the data and Weibull distribution shown in FIG. 6.FIG. 6 shows “breaking strength” corresponding to edge strength (i.e., at failure) in MPa onthe horizontal axis 601 (i.e., x-axis) and failure probability on the non-linear vertical axis 603(i.e., y-axis). FIG. 6 shows the Weibull distribution with center 607 and 95% confidenceintervals 609a and 609b fit to the data points 605. The B10 edge strength is labeled in FIG. 6as about 1280 MPa. Without wishing to be bound by theory, 3YSZ normally have a B10 edge strength from 1300 MPa to 1400 MPa for an uncut substrate. Using these values, these values, the B10 edge strength of the cut edge is 85% or more, 90% or more (e.g., 91.4% using 1400 MPa for the uncut edge strength), 92% or more, 95% or more, or even 98% or more (e.g., 98.5% using 1300 MPa or the uncut edge strength). As discussed above, this is a unexpected and qualitatively improved edge strength relative to conventional cut edges.

[0073] Example B comprised a ceramic-based substrate comprising alumina (Al2O3)with 0.2% porosity and a median grain size of 1.4 µm. Samples of Example B having a thickness of 40 µm were controllably cut with the laser translating at a speed of 240 mm / s. For the cut alumina substrate with a thickness of 70 µm, a surface roughness Ra of the cut edge was about 1 µm, which was comparable to the surface roughness Ra of the first major surface.

[0074] Example C comprised lithium garnet having a thickness of 170 µm that wascontrollably cut with the laser translating at a speed of 175 mm / s. The lithium garnet sample had a grain size of about 4 µm and a porosity of 2%.

[0075] Example D comprised a ceramic-based substrate comprising yttria-stabilizedzirconia (YSZ) having 3 mol% yttria (3YSZ). The 3YSZ had a median grain size of 0.25 µm. Samples of Example D having a thickness of 40 µm were controllably cut into a rectangle (40 mm x 50 mm) with round corners at a speed of 75 mm / s. The corner radius is 0.5 mm.

[0076] The above observations can be combined to provide methods of cutting aceramic-based substrate. Methods can be reliably and controllably cut without the need for scoring or otherwise intentionally damaging (e.g., flaw generation) the ceramic-basedATTORNEY DOCKET NO. SP24-043 substrate and without ablation of material of the ceramic-based substrate. Methods can use thermal stresses induced by a laser to cut polycrystalline ceramic-based substrates. For example, the ceramic-based substrate can have a sufficiently small median grain size (e.g., less than or equal to half of a laser beam spot discussed below, 0.5 mm or less, 0.1 mm or less, or from 1 µm to 60 µm) and / or a sufficiently high porosity (e.g., greater than or equal to 0.1%, from 0.1% to 40%, from 0.5% to 5%, or from 0.1% to 0.5%) that methods of present disclosure can reliably cut ceramic-based substrates at any arbitrary location.

[0077] Cutting the ceramic-based substrate can proceed along grain boundaries and / orporosity of the ceramic-based substrate. Without wishing to be bound by theory, it is believed that the cut edge is formed along grain boundaries and / or porosity of the ceramic-based substrate (e.g., grains) such that the resulting surface profile can be granular and / or mayresemble other as-sintered surfaces of the ceramic-based substrate. The cut edge can have aB10 edge strength that is unexpectedly improved relative to conventional methods of cutting ceramic-based substrates. Consequently, the B10 edge strength of the cut edge can be comparable to the B10 edge strength of the non-cut edge(s) (e.g., 85% to 100%, from 88% to 100%, from 90% to 99%, from 92% to 98%, or from 95% to 97% of the B10 edge strength of the non-cut edge).

[0078] The resulting cut edge can be unmelted and / or without excess grain growth,which can be an indication that the cut edge was not formed by ablation. Also, the cut edge may be free of cracks extending from the cut edge into the ceramic-based substrate, which can be an indication that the cut edge formed by controlled crack propagation (e.g., controlled fracture). Rather than using ablation or heating localized to the surface, methods of the present disclosure can use volumetric heating to cut the ceramic-based substrate. Providing an absorption coefficient from 0.001 cm-1to 0.8 cm-1(e.g., from 0.01 cm-1to 0.6, from 0.1 cm-1) to 0.4 cm-1) can efficiently heat the ceramic-based substrate through the thickness at the target location impinged by the laser beam. As discussed herein, methods can use volumetric heating (e.g., as opposed to heating localized to a surface of the ceramic-based substrate) of the ceramic-based substrate to facilitate controlled cutting of the ceramic-based substrate without ablation and / or melting of the ceramic-based substrate.

[0079] Directional terms as used herein—for example, up, down, right, left, front,back, top, bottom—are made only with reference to the figures as drawn and are not intended to imply absolute orientation. It will be appreciated that the various disclosed aspects may involve features, elements, or steps that are described in connection with that aspect. It will also be appreciated that a feature, element, or step, although described in relation to oneATTORNEY DOCKET NO. SP24-043 aspect, may be interchanged or combined with alternate aspects in various non-illustrated combinations or permutations.

[0080] It is also to be understood that, as used herein the terms “the,” “a,” or “an,”mean “at least one,” and should not be limited to “only one” unless explicitly indicated to the contrary. For example, reference to “a component” comprises aspects having two or more such components unless the context clearly indicates otherwise. Likewise, a “plurality” is intended to denote “more than one.”

[0081] The terms “substantial,” “substantially,” and variations thereof as used hereinare intended to note that a described feature is equal or approximately equal to a value or description. For example, a “substantially planar” surface is intended to denote a surface that is planar or approximately planar. Moreover, as defined above, “substantially similar” is intended to denote that two values are equal or approximately equal. In aspects, “substantially similar” may denote values within about 10% of each other, for example, within about 5% of each other, or within about 2% of each other.

[0082] While various features, elements, or steps of particular aspects may bedisclosed using the transitional phrase “comprising,” it is to be understood that alternative aspects, including those that may be described using the transitional phrases “consisting of” or “consisting essentially of,” are implied. Thus, for example, implied alternative aspects to an apparatus that comprises A+B+C include aspects where an apparatus consists of A+B+C and aspects where an apparatus consists essentially of A+B+C. As used herein, the terms “comprising” and “including”, and variations thereof shall be construed as synonymous and open-ended unless otherwise indicated.

[0083] The above aspects, and the features of those aspects, are exemplary and can beprovided alone or in any combination with any one or more features of other aspects provided herein without departing from the scope of the disclosure.

[0084] It will be apparent to those skilled in the art that various modifications andvariations can be made to the present disclosure without departing from the spirit and scope of the disclosure. Thus, it is intended that the present disclosure cover the modifications and variations of the aspects herein provided they come within the scope of the appended claims and their equivalents.

Claims

ATTORNEY DOCKET NO. SP24-043 What is claimed is:

1. A method of cutting a ceramic-based substrate, the method comprising:emitting a laser beam comprising an optical wavelength from a laser source along a beam path towards the ceramic-based substrate; impinging the laser beam on a target location on a surface of the ceramic-based substrate; translating the laser beam relative to the ceramic-based substrate so that the target location translates along the surface at a translation speed from an initial target location to a final target location while impinging the laser beam at the target location; and cutting the ceramic-based substrate as a result of thermal stresses generated by absorption of the laser beam by the ceramic-based substrate at the target location, wherein the ceramic-based substrate comprises a thickness from greater than or equal to 10 micrometers to less than or equal to 200 micrometers, and the ceramic-based substrate is polycrystalline.

2. The method of claim 1, wherein an absorption coefficient of the ceramic-basedsubstrate at the optical wavelength is from 0.001 per centimeter to less than 1000 per centimeter.

3. The method of claim 1, wherein the laser source generates a plurality of pulses, thelaser beam comprising one or more of the plurality of pulses, a repetition rate of the plurality of pulses is from 10 Hertz to 1 MegaHertz.

4. The method of any one of claims 1-3, wherein the translation speed v in millimetersper second satisfies the following relationship: 0.5 x P / t ≤ v ≤ 1.0 x P / t, where P is a power of the laser source in Watts, and t is the thickness of the ceramic- based substrate in millimeters.

5. The method of any one of claims 1-4, wherein a total average power densityimpinging the initial target location is from 10 Watts per millimeter squared 100 Watts per millimeter squared.ATTORNEY DOCKET NO. SP24-0436. The method of claim 5, wherein the cutting extends through the thickness of theceramic-based substrate and separates the ceramic-based substrate in two parts, with each part having a cut edge formed by the cutting, the cut edge extending between a first major surface and a second major surface, and the surface impinged by the laser beam is the first major surface of the ceramic-based substrate.

7. The method of claim 6, wherein a B10 edge strength along the cut edge is greater thanor equal to 85% of a B10 edge strength along another edge of the corresponding part formed from the ceramic-based substrate.

8. The method of any one of claims 6-7, wherein a surface roughness Ra of the cut edgeformed by the cutting is within 50% of a surface roughness Ra of the first major surface of the corresponding part formed from the ceramic-based substrate.

9. The method of any one of claims 6-8, wherein the cutting is auto-initiated by thethermal stresses generated by absorption of the laser beam by the ceramic-based substrate at the target location, and the cut edge is not melted during the cutting.

10. The method of any one of claims 6-9, wherein the fracture propagates along a grain boundary of the polycrystalline ceramic-based substrate, the fracture propagates along pores corresponding to a porosity of the polycrystalline ceramic-based substrate, or a combination thereof.

11. The method of any one of claims 1-9, wherein a porosity of the ceramic-based substrate is from greater than or equal to 0.1% to less than or equal to 40%.

12. The method of any one of claims 1-11, a median grain size of the polycrystalline ceramic-based substrate is less than or equal to 0.5 millimeters.

13. The method of any one of claims 1-11, wherein a maximum dimension of the laser beam at the target location is greater than or equal to 2 times a median grain size of the polycrystalline ceramic-based substrate.ATTORNEY DOCKET NO. SP24-043 14. The method of any one of claims 1-13, wherein, prior to the impinging, the ceramic- based substrate has not been scored or otherwise intentionally damaged at the target location.

15. The method of any one of claims 1-14, wherein the optical wavelength is from greater than or equal to 0.3 micrometers to less than or equal to 15 micrometers.

16. The method of any one of claims 1-15, wherein the laser source is a carbon dioxide laser.

17. A ceramic-based substrate comprising: a thickness from greater than or equal to 10 micrometers to less than or equal to 200 micrometers between a first major surface and a second major surface; a porosity of the ceramic-based substrate is from greater than or equal to 0.1% to less than or equal to 40%; and a cut edge extending between the first major surface and the second major surface, wherein the ceramic-based substrate is polycrystalline.

18. The ceramic-based substrate of claim 17, wherein a B10 edge strength along the cut edge is greater than or equal to 85% of a B10 edge strength along another edge of the ceramic-based substrate.

19. The ceramic-based substrate of any one of claims 17-18, wherein a surface roughness Ra of the cut edge is within 50% of a surface roughness Ra of the first major surface.

20. The ceramic-based substrate of any one of claims 17-18, wherein the cut edge is not melted and the ceramic-based substrate is free of cracks extending from the cut edge into the ceramic-based substrate.

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