Wafer processing cavity, wafer processing device and wafer processing apparatus

Abstract

Provided in the embodiments of the present application are a wafer processing cavity, a wafer processing device and a wafer processing apparatus. The wafer processing cavity comprises a cavity body, a tray and a spray head, the cavity body being provided with a discharging opening communicated with an air extraction device, the tray being used for bearing a wafer, and the spray head being used for spraying out a processing fluid. An isolation plate is arranged between the tray and the cavity body, the isolation plate surrounds the tray, and the isolation plate and the tray divide the cavity body into a first space containing the wafer and the spray head and a second space containing the discharging opening. The isolation plate is provided with uniform flow distribution holes, and the processing fluid in the first space enters the second space through the uniform flow distribution holes and then is discharged out of the cavity body. The wafer processing cavity of the present application can improve the uniformity in processing wafers.

Description

Wafer processing chamber, wafer processing device and wafer processing equipment Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a wafer processing chamber, a wafer processing device, and a wafer processing equipment. Background Art

[0002] In existing technology, when performing thin film deposition, etching, cleaning, and other processes on wafers, the wafers are typically placed on a tray and a showerhead positioned above the wafers. The showerhead supplies a processing fluid to treat the wafers. Due to obstruction by the tray or showerhead, the processing fluid, after processing the wafer surface, leaves the wafer at the edge and flows toward the outlet.

[0003] However, the discharge port is usually only set on one side of the tray. When the processing fluid flows from the edge of the wafer to the discharge port, the processing fluid will concentrate on the side where the discharge port is set, resulting in uneven distribution of the processing fluid at the edge of the wafer, thereby reducing the uniformity of wafer processing. Summary of the Invention

[0004] Embodiments of the present application provide a wafer processing chamber, a wafer processing apparatus, and a wafer processing device for improving the uniformity of wafer processing.

[0005] In the first aspect, the present application provides a wafer processing chamber, comprising: a chamber body, provided with an exhaust port, the exhaust port being connected to an exhaust device; a tray for carrying wafers; a spray head for spraying a processing fluid; wherein an isolation plate is provided between the tray and the chamber body, the isolation plate being arranged around the tray, the isolation plate and the tray separating the chamber into a first space including the upper surface of the tray and the spray head and a second space including the exhaust port, the isolation plate being provided with a uniform flow hole, so that the processing fluid in the first space enters the second space through the uniform flow hole and is then discharged from the chamber.

[0006] Specifically, a gap is left between the isolation plate and the tray.

[0007] Specifically, the isolation plate is an annular flat plate, and the isolation plate extends to the side wall of the cavity.

[0008] Specifically, the height of the isolation plate is less than or equal to the height of the upper surface of the tray and greater than or equal to the height of the lower surface of the tray.

[0009] Specifically, the isolation plate is an annular inclined plate, and the isolation plate extends to the cavity wall.

[0010] Specifically, the inner circle of the isolation plate is high and the outer circle is low, and the height of the highest point of the isolation plate is greater than or equal to the height of the lower surface of the tray and less than or equal to the height of the upper surface of the tray.

[0011] Specifically, the inner circle of the isolation plate is low and the outer circle is high, and the height of the lowest point of the isolation plate is greater than or equal to the height of the lower surface of the tray and less than or equal to the height of the upper surface of the tray.

[0012] Specifically, the isolation plate is an annular bent plate, comprising a horizontal portion and a vertical portion bent upwardly and extending from the horizontal portion, and the isolation plate extends to the top wall of the cavity.

[0013] Specifically, the height of the horizontal portion of the isolation plate is less than or equal to the height of the upper surface of the pallet and greater than or equal to the height of the lower surface of the pallet.

[0014] Specifically, the uniform flow holes are opened in the horizontal portion of the isolation plate.

[0015] Specifically, there are a plurality of uniform flow holes, the position on the isolation plate farthest from the discharge port has the largest opening rate, and the position on the isolation plate closest to the discharge port has the smallest opening rate.

[0016] Specifically, each of the uniform flow holes has the same size, the position of the isolation plate farthest from the discharge port has the highest through-hole density, and the position of the isolation plate closest to the discharge port has the lowest through-hole density.

[0017] Specifically, the plurality of uniform flow holes have different sizes, the uniform flow hole farthest from the discharge port is the largest, and the uniform flow hole closest to the discharge port is the smallest.

[0018] Specifically, the uniform flow holes are waist-shaped holes evenly distributed around the tray, and the widths of the multiple waist-shaped holes are the same. The uniform flow hole farthest from the discharge port is the longest, and the uniform flow hole closest to the discharge port is the shortest.

[0019] Specifically, the uniform flow holes between the position with the largest open porosity and the position with the smallest open porosity transition gradually.

[0020] Specifically, the inner circle of the isolation plate is bent downward and inward to below the tray.

[0021] Specifically, the inner circle of the isolation plate extends downward to the bottom wall of the cavity.

[0022] Specifically, the processing fluid is plasma or etching fluid.

[0023] In the second aspect, the present application provides a wafer processing device, comprising: an outer cavity, which is provided with a total outlet connected to an exhaust device; a plurality of trays, correspondingly arranged in the plurality of processing areas, for carrying wafers; a plurality of spray heads, correspondingly arranged in the plurality of processing areas, for spraying processing fluids; a plurality of processing areas, which are arranged in the outer cavity, and each processing area is provided with an outlet; a gas channel, which is used to connect the outlets of the plurality of processing areas with the total outlet; wherein, the plurality of processing areas also include partitions arranged around the plurality of trays, the partitions separate the plurality of processing areas into at least one first space including the upper surfaces of the plurality of trays and the plurality of spray heads and at least one second space including the outlet, and the partitions are provided with rectifying holes, so that the processing fluid in the first space enters the second space through the rectifying holes and is discharged in sequence through the outlet, the gas channel and the total outlet.

[0024] Specifically, the main outlet is arranged on the bottom wall of the outer cavity, and the multiple processing areas are arranged around the main outlet.

[0025] Specifically, there are multiple partitions, which separate the multiple processing areas into a first space and multiple second spaces, wherein each partition includes a surrounding portion arranged around each tray and a blocking portion extending downward from the outside of the surrounding portion, and the blocking portion extends to the bottom wall of the outer cavity to enclose a second space corresponding to each processing area, the outlet is opened in the blocking portion, each second space includes an outlet of a processing area, the upper surfaces of the trays of the multiple processing areas are all arranged in the same first space, and the rectifying flow hole is opened in the surrounding portion.

[0026] Specifically, a shielding cover is further included, and the shielding cover horizontally extends from the enclosure portion to the side wall of the outer cavity.

[0027] Specifically, there are multiple partitions, which divide the multiple processing areas into multiple first spaces and one second space, wherein each partition includes a surrounding portion arranged around the tray and a blocking portion extending upward from the outside of the surrounding portion, and the blocking portion extends to the top wall of the outer cavity to enclose a first space corresponding to each processing area, each first space includes the upper surface of the tray and a sprinkler head of a processing area, and the rectifying flow hole is opened in the surrounding portion; each processing area respectively includes a partition wall arranged around the tray, and the partition wall extends upward from the bottom wall of the outer cavity, and multiple partition walls are arranged in the same second space, and the outlet is opened in the partition wall, and multiple outlets are arranged in the same second space.

[0028] Specifically, the partition is a flat plate extending to the side wall of the outer cavity, dividing the multiple processing areas into a first space and a second space, and the upper surfaces of the trays of the multiple processing areas are all located in the first space above the partition; each processing area includes a partition wall arranged around the tray, and the partition wall extends upward from the bottom wall of the outer cavity, and multiple partition walls are all located in the second space below the partition, the outlet is opened in the partition wall, and the multiple outlets are all arranged in the second space.

[0029] Specifically, the partition includes a plurality of surrounding portions arranged around the tray, and the rectifying flow holes are opened in the surrounding portions.

[0030] Specifically, the height of the surrounding portion is lower than the height of the upper surface of the tray and higher than the height of the lower surface of the tray.

[0031] Specifically, the opening rate is the largest at a position where the surrounding portion is farthest from the outlet, and the opening rate is the smallest at a position where the surrounding portion is closest to the outlet.

[0032] Specifically, there are a plurality of rectifying holes, and the distance between each tray and the rectifying hole closest to the tray is greater than or equal to 1 mm and less than or equal to 78 mm.

[0033] Specifically, the sum of the horizontal distance from the center of each tray to the outlet and the horizontal distance from the outlet to the main outlet is greater than the horizontal straight-line distance from the center of each tray to the main outlet.

[0034] Specifically, each processing area has a plurality of outlets, and the multiple outlets of each processing area are evenly distributed around the trays in each processing area.

[0035] Specifically, each processing zone has two outlets, and the distances between the two outlets of the same processing zone and the total outlet are equal.

[0036] Specifically, a shielding cover is further provided in the outer cavity, and the shielding cover horizontally extends from the partition wall to the side wall of the outer cavity.

[0037] Specifically, a gap is left between the partition and the tray.

[0038] Specifically, the processing fluid is plasma or etching fluid.

[0039] In the third aspect, the present application provides a wafer processing equipment, comprising: an outer cavity; a plurality of processing areas, arranged in the outer cavity, each processing area is provided with an outlet; a plurality of trays, correspondingly arranged in the plurality of processing areas, for carrying wafers; a plurality of spray heads, correspondingly arranged in the plurality of processing areas, for spraying processing fluid; wherein, each of the processing areas comprises a partition plate arranged around each tray, the partition plate extending downward from the top wall of the outer cavity, dividing the plurality of processing areas into a first space including the upper surface of the plurality of trays and the plurality of spray heads and a second space including the outlet, a gap greater than or equal to 1 mm and less than or equal to 78 mm is left between the partition plate and the side wall of the tray, so that the processing fluid enters the second space from the first space through the gap and is discharged through the outlet.

[0040] The wafer processing device of the present application is provided with an isolation plate between the tray and the side wall of the cavity. The isolation plate and the tray separate the cavity into a first space including the upper surface of the tray and the spray head and a second space including the discharge port. A uniform flow hole is opened on the isolation plate, and the processing fluid from the edge of the wafer flows to the discharge port through the uniform flow hole, thereby improving the uniformity of the fluid at the edge of the wafer, and thereby improving the uniformity of the wafer processing.

[0041] Other features and advantages of the present application will become apparent from the following detailed description, or may be learned in part by practice of the present application.

[0042] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application.

[0043] Summary of the Figures

[0044] The accompanying drawings are incorporated into and constitute a part of the specification, illustrating embodiments consistent with the present application and, together with the specification, explaining the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can derive other drawings based on these drawings without inventive effort. In the drawings:

[0045] FIG1 shows a schematic diagram of the structure of a wafer processing chamber according to an embodiment of the present application;

[0046] FIG2 is a schematic diagram showing a top view of the wafer processing chamber in FIG1 ;

[0047] FIG3 shows a schematic diagram of a wafer processing chamber structure according to another embodiment of the present application;

[0048] FIG4 shows a schematic diagram of a wafer processing chamber structure according to another embodiment of the present application;

[0049] FIG5 shows a schematic diagram of a wafer processing chamber structure according to another embodiment of the present application;

[0050] FIG6 is a schematic diagram showing a top view of a wafer processing chamber according to another embodiment of the present application;

[0051] FIG7 shows a schematic cross-sectional structure diagram of a wafer processing device according to an embodiment of the present application;

[0052] FIG8 shows a schematic diagram of a top view of the wafer processing device in FIG7 ;

[0053] FIG9 shows a schematic top view of a wafer processing apparatus according to another embodiment of the present application;

[0054] FIG10 shows a schematic structural diagram of a wafer processing device according to another embodiment of the present application.

[0055] Among them, 1. cavity, 11. discharge outlet, 2. tray, 3. sprinkler head, 4. isolation plate, 41. uniform flow hole; 5. outer cavity, 51. total outlet, 6. outlet, 7. exhaust device, 8. partition, 81. surrounding part, 82. enclosure part, 83. uniform flow hole, 9. gas channel, 10. shielding cover, 11. partition wall.

[0056] Preferred embodiments of the present invention

[0057] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be thorough and complete and will fully convey the concepts of the example embodiments to those skilled in the art.

[0058] In addition, described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner.In the following description, many specific details are provided so as to provide a full understanding of the embodiments of the present application. However, it will be appreciated by those skilled in the art that the technical scheme of the present application can be put into practice without one or more of the specific details, or other methods, components, devices, steps etc. can be adopted. In other cases, known methods, devices, implementations or operations are not shown or described in detail to avoid blurring the various aspects of the application.

[0059] 1 to 6 , this embodiment provides a wafer processing chamber for performing a chemical vapor deposition (CVD) process, a cleaning process, or an etching process, and in particular, a plasma enhanced chemical vapor deposition (PECVD) process, which can improve the uniformity of wafer processing.

[0060] As shown in Figure 1, the wafer processing chamber includes a chamber 1 and a tray 2 and a shower head 3 arranged in the chamber 1. The chamber 1 includes a chamber top wall, a chamber side wall and a chamber bottom wall. The tray 2 is fixed to the chamber bottom wall by a fixed shaft and is used to carry the wafer. The shower head 3 is arranged above the tray 2 and is used to supply processing fluid to the wafer. The shower head 3 fully covers the wafer so that the entire surface of the wafer is processed. An outlet 11 for discharging the processing fluid is provided in the chamber wall. When thin film deposition is performed on the wafer, in order to reduce the contamination of the wafer by impurities, the processing fluid is usually extracted from the chamber 1 through the outlet 11 while the wafer is being processed. The shape of the chamber 1 can be cylindrical or other shapes. Among them, the processing fluid can be plasma, etching fluid or other fluids.

[0061] The exhaust port 11 is located below the tray 2 and is connected to the exhaust device so that the flow direction of the processing fluid is the same as the flow direction of the processing fluid during wafer processing, both from top to bottom, to avoid interfering with the flow direction of the processing fluid. Specifically, the exhaust port 11 is located at the bottom of the side wall of the cavity, and the exhaust port 11 located on the side wall of the cavity can control the exhaust direction. The shape of the exhaust port 11 can be square, circular or other shapes. The number of exhaust ports 11 can be multiple, and the multiple exhaust ports 11 are evenly distributed around the side wall of the cavity to increase the exhaust efficiency and make the wafer processing more uniform. For example, when the number of exhaust ports 11 is two, the two exhaust ports 11 are arranged relative to each other. In other embodiments of the embodiments of the present application, the number of exhaust ports 11 can be one. In other embodiments of the embodiments of the present application, the exhaust port 11 is arranged on the bottom wall of the cavity. In other embodiments of the embodiments of the present application, the exhaust port 11 is arranged above the tray 2. For example, the exhaust port 11 can be arranged on the top wall of the cavity or on the upper part of the side wall of the cavity.

[0062] An isolation plate 4 is provided between the tray 2 and the sidewall of the chamber. The isolation plate 4 is an annular plate arranged around the tray 2. The isolation plate 4 and the tray 2 separate the chamber 1 into a first space and a second space. The wafers and showerhead 3 in the chamber 1 are arranged in the first space, and the discharge port 11 of the chamber 1 is arranged in the second space. As shown in FIG2 , the isolation plate 4 is provided with a uniform flow hole 41 that passes through the isolation plate 4. The uniform flow hole 41 connects the first space and the second space of the chamber 1. The processing fluid in the first space flows evenly from the edge of the wafer through the uniform flow hole 41 to the second space, so that the processing fluid is discharged from the chamber 1 through the discharge port 11 in the second space. At the same time, the first space and the second space are connected through the uniform flow hole 41, reducing the connecting area between the first space and the second space, limiting the reaction of the processing fluid to the first space as much as possible, and reducing the area where reaction products are produced. On the one hand, the processing fluid can be quickly withdrawn, improving the wafer processing efficiency, and on the other hand, it can also reduce the area where reactive particles are produced, facilitating the cleaning of the chamber 1. Furthermore, reducing the area of ​​communication between the first and second spaces stabilizes the pressure and flow rate of the processing fluid in the first space, bringing the pressure and flow rate at the wafer edge closer to those at the wafer center, further improving wafer processing uniformity. A gap is left between isolation plate 4 and tray 2 to prevent it from affecting the temperature of tray 2.

[0063] Specifically, the isolation plate 4 is an annular plate concentric with the tray 2. For example, as shown in FIG3 , the isolation plate 4 can be a circular flat plate. The height of the isolation plate 4 is greater than the height of the discharge port 11. The isolation plate 4 extends horizontally outward from a position close to the tray 2 to the side wall of the cavity to separate the cavity 1. The height of the isolation plate 4 is less than or equal to the height of the upper surface of the tray and greater than or equal to the height of the lower surface of the tray, so that the uniform flow hole 41 on the isolation plate 4 is located on the flow path of the processing fluid from the wafer to the discharge port 11, and the isolation plate 4 is close to the wafer, which can further improve the uniformity of wafer processing. In one embodiment, the discharge port 11 is opened from the bottom wall of the cavity to the position where the isolation plate 4 connects to the cavity 1, so as to increase the area of ​​the discharge port 11 and reduce the area of ​​the cavity 1 in the second space that contacts the processing fluid, further reducing the area of ​​the reaction particles, and facilitating the cleaning of the cavity 1.

[0064] In other embodiments of the present application, as shown in FIG4 , the isolation plate 4 is an annular inclined plate that extends to the side wall of the chamber. The location where the side wall of the chamber connects to the isolation plate 4 is above the outlet 11, thereby separating the wafer and the shower head 3 in the same space and separating the outlet 11 in another space. Specifically, when the inner ring of the isolation plate 4 is high and the outer ring is low, the height of the highest point of the isolation plate 4 is greater than or equal to the height of the lower surface of the tray and less than or equal to the height of the upper surface of the tray, so that the isolation plate 4 is located on the flow path of the processing fluid from the wafer to the outlet 11, and the isolation plate 4 is close to the wafer, which can further improve the uniformity of wafer processing. When the inner ring of the isolation plate 4 is low and the outer ring is high, the height of the lowest point of the isolation plate 4 is greater than or equal to the height of the lower surface of the tray and less than or equal to the height of the upper surface of the tray, so that the isolation plate 4 is located on the flow path of the processing fluid from the wafer to the outlet 11, and the isolation plate 4 is close to the wafer, which can further improve the uniformity of wafer processing.

[0065] In other implementations of the embodiment of the present application, the isolation plate 4 is a conical panel, and the isolation plate 4 extends to the top wall of the cavity.

[0066] In other embodiments of the embodiments of the present application, the isolation plate 4 is an annular bent plate, and the isolation plate 4 includes a horizontal portion and a vertical portion bent upward from the horizontal portion. The isolation plate 4 extends to the top wall of the cavity to separate the cavity 1, wherein the height of the horizontal portion is less than or equal to the height of the upper surface of the tray and greater than or equal to the height of the lower surface of the tray, and the uniform flow hole 41 is opened in the horizontal portion of the isolation plate 4, so that the horizontal portion and the uniform flow hole 41 on the horizontal portion are located on the flow path of the processing fluid from the wafer to the exhaust port 11, and the isolation plate 4 is close to the wafer, which can further improve the uniformity of wafer processing.

[0067] Referring to Figure 1 here, in each embodiment, the inner circle of the isolation plate can also extend downward to the bottom wall of the cavity, and the isolation plate 4, the bottom wall of the cavity and the side wall of the cavity enclose an independent space, and the discharge port 11 is opened on the side wall of the cavity that constitutes the independent space, so that the discharge port 11 is only connected to the uniform flow hole 41 of the isolation plate 4, so that the processing fluid flows to the discharge port 11 through the uniform flow hole 41, further improving the uniformity of wafer processing. In other embodiments of the embodiments of the present application, as shown in Figure 5, the inner circle of the isolation plate is bent downward and inward to the bottom of the tray 2 to block the gap between the isolation plate 4 and the tray 2, so that more processing fluid passes through the uniform flow hole 41. Furthermore, the inner circle of the isolation plate is bent inward and downward to the bottom wall of the cavity, which can block the gap while allowing the processing fluid to flow to the discharge port 11 through the uniform flow hole 41.

[0068] Further, referring to Figure 2 again, there are multiple uniform flow holes 41, which are arranged along the circumference on the isolation plate 4. The position on the isolation plate 4 that is farthest from the exhaust port 11 has the largest opening rate, and the position on the isolation plate 4 that is closest to the exhaust port 11 has the smallest opening rate. Among them, the opening rate of the isolation plate 4 is the ratio of the total area of ​​all uniform flow holes 41 on the isolation plate 4 to the area of ​​the isolation plate 4. When the exhaust port 11 connected to the exhaust device exhausts air from the wafer through the isolation plate 4, the suction force at the position on the isolation plate 4 that is farthest from the exhaust port 11 is the weakest, so that the suction force at the position on the isolation plate 4 with the largest opening rate is the weakest. The suction force at the position on the isolation plate 4 that is closest to the exhaust port 11 is the strongest, so that the suction force at the position on the isolation plate 4 with the smallest opening rate is the strongest, so that the amount of processing fluid passing through these two positions is similar, thereby improving the uniformity of the flow of processing fluid at the edge of the wafer. Furthermore, the aperture ratio of the uniform flow holes 41 between the maximum aperture ratio position and the minimum aperture ratio position is gradually transitioned, so that the processing fluid around the wafer is uniformly flowed, thereby uniformly processing the wafer.

[0069] Specifically, if each uniform flow hole 41 is the same size, the position of the isolation plate 4 farthest from the discharge port 11 has the highest through-hole density, and the position of the isolation plate 4 closest to the discharge port 11 has the lowest through-hole density, so as to adjust the porosity by the through-hole density. For example, the uniform flow holes 41 can be waist-shaped holes evenly distributed around the tray 2, each waist-shaped hole extending along the radial direction of the tray 2, and multiple waist-shaped holes are the same size, the position with the highest through-hole density has the smallest hole spacing, and the position with the lowest through-hole density has the largest hole spacing. In other embodiments of the present application, as shown in FIG6 , if multiple uniform flow holes 41 are of different sizes, the uniform flow hole 41 farthest from the discharge port 11 is the largest, and the uniform flow hole 41 closest to the discharge port 11 is the smallest, so as to adjust the porosity by the through-hole size. For example, the uniform flow holes 41 may be waist-shaped holes evenly distributed around the tray 2, each extending radially along the tray 2. The waist-shaped holes have the same width, and the spacing between any two adjacent waist-shaped holes is the same. The uniform flow hole 41 farthest from the outlet 11 is the longest, and the uniform flow hole 41 closest to the outlet 11 is the shortest. In other embodiments of the present application, the aperture ratio can be adjusted by simultaneously adjusting the spacing and hole size of the uniform flow holes 41.

[0070] 7 to 10 , this embodiment further provides a wafer processing device for performing a chemical vapor deposition (CVD) process, a cleaning process, or an etching process, and in particular, a plasma enhanced chemical vapor deposition (PECVD) process, which can improve the uniformity of wafer processing.

[0071] As shown in Figure 7, the wafer processing device includes an outer cavity 5, and the outer cavity 5 includes an outer cavity side wall, an outer cavity bottom wall and an outer cavity top wall. As shown in Figure 8, the outer cavity bottom wall is provided with a total outlet 51 connected to the exhaust device 7, and a plurality of processing areas are provided in the outer cavity 5 around the total outlet 51. For example, the number of processing areas can be 3, and the 3 processing areas can be arranged in a triangle, with the total outlet 51 arranged at the center of the triangle. Figure 8 is cut along the section line KK to obtain the lower half of Figure 7. Referring again to Figure 7, each processing area is provided with a tray 2 for carrying wafers, a spray head 3 for supplying processing fluid, and a fixed axis for fixing the tray 2, so that the wafer processing device can process multiple wafers at the same time, thereby improving the wafer processing efficiency.

[0072] Specifically, the processing area is open on all sides, and the fixed axis of the fixed tray 2 is fixed to the bottom wall of the outer cavity. There are multiple partitions 8, and the multiple partitions 8 divide the multiple processing areas into a first space and multiple second spaces. The upper surfaces of the trays and the spray heads 3 in the multiple processing areas are all in the first space, and each processing area contains a second space, that is, the outlet of each processing area is set in a second space. Specifically, each partition 8 is set around a tray 2, and each partition 8 includes a surrounding portion 81 set around the tray 2 and a blocking portion 82 extending downward from the outside of the surrounding portion. The blocking portion 82 extends from the outside of the surrounding portion 81 to the bottom wall of the outer cavity to enclose a second space. The space in the outer cavity 5 isolated from the second space is used as the first space, and the rectifying flow hole 83 is opened in the surrounding portion 81 to connect the first space and the second space. The upper portions of the multiple processing zones are interconnected, so the upper surface of the tray housing the multiple wafers and the multiple showerheads 3 are all located within the same first space. Compared to a first space separated by a processing zone sidewall, this reduces the area of ​​contact between the processing fluid and the processing zone wall, speeding up the flow rate of the processing fluid and reducing residual reaction products. Each enclosure 82 defines a rectifying flow hole 83. The processing fluid flows from the first space through the rectifying flow hole 83 into the second space before exiting the processing zone through the outlet 6.

[0073] Furthermore, the outlet 6 of the treatment area is located below the tray 2, and opens from the bottom wall of the outer cavity to the surrounding portion 81, so as to maximize the area of ​​the outlet 6. The enclosure portion 82 also extends upward from the outside of the surrounding portion, that is, the height of the enclosure portion 82 is greater than the height of the surrounding portion 81, and there is a gap between the enclosure portion 82 and the top wall of the outer cavity. While reducing the contact area between the enclosure portion 82 and the treatment fluid, it can also limit the treatment fluid from the outside of the surrounding portion to the outside of the enclosure portion, so that more treatment fluid flows from the rectifying flow hole 83 on the partition 8 to the second space. Preferably, the height of the top of the enclosure portion is lower than the height of the upper surface of the tray. The enclosure portion 82 close to the side wall of the outer cavity is connected to the side wall of the outer cavity or is integrally provided to increase the stability of the partition 8 fixation.

[0074] The outer cavity is also provided with a shielding cover 10, which extends horizontally from the enclosure 8 to the side wall of the outer cavity. For example, referring to Figure 9, the shielding cover 10 extends from the top of the enclosure 82 to the side wall of the outer cavity. The shielding cover 10 blocks the gap between the enclosures 82 of adjacent processing areas, and the shielding cover 10 blocks the gap between the enclosure 82 and the side wall of the outer cavity. The shielding cover 10, the enclosure 8, the side wall of the outer cavity and the bottom wall of the outer cavity form a gas channel 9, which connects the outlets 6 of multiple processing areas with the main outlet 51. The processing fluid passes through the gas channel 9 from the outlet 6 and is discharged from the main outlet 51 of the outer cavity, so that the processing fluid is discharged through only one main outlet 51. Compared with each processing area outlet 6 being connected to a gas extraction device 7, the number of gas extraction devices 7 can be saved. The flow direction of the processing fluid in the gas channel is shown by the arrows in Figures 7, 8 and 9, so that the reaction residues can be discharged smoothly. The processing fluid is plasma, etching fluid or other fluid. In other implementations of the embodiment of the present application, the outlet 6 is located above the tray 2 or flush with the tray 2 .

[0075] In this embodiment, the surrounding portion 81 can be an annular plate such as an annular flat plate, an annular conical plate, or an annular bent plate, with a gap between it and the tray 2 to avoid affecting the temperature of the tray 2. The height of the position of the rectifying flow hole 83 on the surrounding portion 81 is lower than the height of the upper surface of the tray and higher than the height of the lower surface of the tray, so that the rectifying flow hole 83 is on the flow path of the processing fluid and the rectifying flow hole 83 is close to the wafer, which can improve the uniformity of wafer processing. The inner side of the surrounding portion can be bent downward to the bottom wall of the outer cavity so that the processing fluid flows to the outlet 6 through the rectifying flow hole 83. In addition, the inner side of the surrounding portion can be bent downward and inward to the bottom of the tray 2 to cover the gap between the surrounding portion 81 and the tray 2. There are multiple rectifying flow holes 83, and the distance between the tray 2 and the rectifying flow hole 83 closest to the tray 2 is greater than or equal to 1 mm and less than or equal to 78 mm, for example, it can be 4.5 mm, 5 mm, 5.5 mm, 10 mm, 20 mm or 40 mm, so as to effectively regulate the processing fluid at the edge of the wafer. Referring again to FIG. 8 , the location on surrounding portion 81 farthest from outlet 6 has the highest porosity, while the location on surrounding portion 81 closest to outlet 6 has the lowest porosity, ensuring uniform passage of the processing fluid through surrounding portion 81. The method for adjusting the porosity of rectifying holes 83 on surrounding portion 81 can be referenced to the method for adjusting the porosity of uniform flow holes 41 on isolation plate 4 in the wafer processing area described above, and will not be further elaborated here.

[0076] In another embodiment of the present application, as shown in FIG10 , there are a plurality of partitions 8, each of which includes a surrounding portion 81 arranged around the tray 2 and a blocking portion 82 extending upward from the outside of the surrounding portion. The blocking portion 82 extends to the top wall of the outer cavity to enclose a first space, so that the upper surface of the tray and the sprinkler head 3 of each treatment area are arranged in a first space, and the space in the outer cavity 5 other than the first space is used as a second space. The rectifying flow hole 83 (as shown in FIG8 ) is opened in the surrounding portion 81 to connect the first space and the second space. Each treatment area includes a partition wall 11 arranged around the tray 2, and the partition wall 11 extends upward from the bottom wall of the outer cavity and is located below the tray 2. The partition wall 11 of each treatment area is arranged in the second space, that is, the space enclosed by each partition wall 11 is interconnected in the second space. The connection method can be that a connecting port is opened on each partition wall 11, or the top ends of each partition wall 11 are interconnected. The outlet 6 of the treatment area is opened on the partition wall 11 so that the outlets 6 of multiple treatment areas are arranged in the same second space, so that the treatment fluid contacts fewer treatment area walls in the process from the wafer to the outlet 6, speeds up the discharge of the treatment fluid, and reduces the residual reactants. The partition wall 11 adjacent to the side wall of the outer cavity can be connected to the side wall of the outer cavity or integrally formed with the side wall of the outer cavity so that the partition wall 11 is stably fixed. The partition wall 11 also extends horizontally to the side wall of the outer cavity to set a shielding cover 10, and the shielding cover 10 is set above the connecting port of the partition wall 11 to avoid affecting the space in each partition wall 11 from being connected to each other in the second space. For example, the shielding cover 10 can be set at the top of the partition wall 11 so that a gas channel 9 is formed between the shielding cover 10, the partition wall 11, the side wall of the outer cavity and the bottom wall of the outer cavity, and the flow direction of the treatment fluid in the gas channel is shown by the arrow so that the reaction residues can be discharged smoothly.

[0077] In other implementations of the embodiments of the present application, the partition 8 is simplified to one, and the partition 8 is a flat plate extending to the side wall of the outer cavity. The space above the partition 8 is the first space, and the space below the partition 8 is the second space. The partition 8 is provided with a plurality of surrounding portions 81 arranged around the tray 2, and the rectifying flow holes 83 are opened in the surrounding portions 81 to connect the first space and the second space. The upper surface of the tray and the spray head 3 of the multiple treatment areas are all located in the first space. Each treatment area includes a partition wall 11 arranged around the tray 2. The partition wall 11 extends upward from the bottom wall of the outer cavity and is located below the tray 2. The outlet 6 is opened in the partition wall 11. The multiple partition walls 11 are all located in the second space below the partition 8. The spaces enclosed by the various partition walls 11 are interconnected in the second space so that the multiple outlets 6 are all located in the same second space. The partition wall 11 also extends horizontally toward the side wall of the outer cavity to set a shielding cover 10 to enclose an airway.

[0078] In other implementations of the embodiments of the present application, the processing area includes a processing area side wall, and the side wall of each processing area extends from the bottom wall of the outer cavity to the top wall of the outer cavity. Each processing area is not connected to each other and is independent of each other. The outlet 6 of the processing area is set on the side wall of the processing area. Each processing area is provided with a partition 8 arranged around the tray 2. The partition 8 separates each processing area into a first space and a second space, and a rectifying flow hole 83 is provided on the partition 8 to connect the first space and the second space. The structure and setting method of the partition 8 refer to the setting of the isolation plate 4 of the wafer processing area mentioned above, and will not be repeated here. In another embodiment, the processing area includes a processing area side wall, a processing area bottom wall and a processing area top wall.

[0079] In other implementations of the embodiment of the present application, the arrangement of the processing area and the partition 8 in the outer cavity 5 can be a combination of the above implementations.

[0080] In each embodiment, the sum of the horizontal distance from the center of the tray to the processing zone outlet 6 and the horizontal distance from the outlet 6 to the main outlet 51 is greater than the horizontal straight-line distance from the center of the tray to the main outlet 51, so as to avoid the outlet 6 being directly opposite the main outlet 51 and reduce the impact of the main outlet 51 connected to the exhaust device 7 on the flow direction of the processing fluid. Each processing zone has multiple outlets 6, and the multiple outlets 6 of each processing zone are evenly distributed around the tray 2. For example, each processing zone has two outlets 6, and the distances between the two outlets 6 of the same processing zone and the main outlet 51 are equal, so that the discharge rate of the processing fluid in multiple processing zones is the same, so that the wafers in different processing zones are processed in the same manner in the same time, and the wafers in each processing zone are processed evenly.

[0081] This embodiment also provides a wafer processing device for performing a chemical vapor deposition (CVD) process, a cleaning process, or an etching process, especially a plasma enhanced chemical vapor deposition (PECVD) process, which can improve the uniformity of wafer processing.

[0082] The wafer processing equipment includes an outer cavity 5 and a plurality of processing areas arranged in the outer cavity 5, each processing area is provided with an outlet 6, each processing area includes a partition plate arranged around the tray 2, the partition plate extends downward from the top wall of the outer cavity, and a gap greater than or equal to 1 mm and less than or equal to 78 mm is left between the partition plate and the side wall of the tray. The partition plate and the tray 2 separate the wafers and the shower head 3 in each processing area into a relatively independent first space, and the outlet 6 of the processing area is separated by the partition plate into a second space outside the first space. The processing fluid enters the second space from the first space through the gap and is discharged through the outlet 6, thereby reducing the connection area between the first space and the second space, limiting the reaction of the processing fluid to the first space as much as possible, reducing the area where the reaction products are produced, reducing the area where the reaction particles are produced, and facilitating the cleaning of the cavity. In addition, reducing the connection area between the first space and the second space can also stabilize the pressure in the first space and the flow rate of the processing fluid, so that the pressure and flow rate at the edge of the wafer are close to the pressure and flow rate at the center of the wafer, further improving the uniformity of wafer processing. The gap between the partition plate and the side wall of the tray may be 4.5 mm, 5 mm, 5.5 mm, 10 mm, 20 mm or 40 mm.

[0083] The configuration of the external chamber 5 and processing area in the wafer processing equipment is similar to that of the external chamber 5 and processing area in the wafer processing device described above, and will not be described in detail here. In other embodiments of the present application, the external chamber 5 and processing area in the wafer processing equipment may be different from those in the wafer processing device described above. For example, the external chamber 5 may not be provided with a main outlet 51, and each processing area may be connected to an exhaust device 7.

[0084] Those skilled in the art will readily conceive of other embodiments of the present application after considering the specification and practicing the embodiments disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present application that follow the general principles of this application and include common knowledge or customary techniques in the art that are not disclosed herein.

[0085] It should be understood that the present application is not limited to the exact structures described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A wafer processing chamber, characterized in that: include: The cavity is provided with an exhaust port, the exhaust port being connected to the exhaust device; Tray for carrying wafers; a spray head for spraying a treatment fluid; An isolation plate is provided between the tray and the cavity, and the isolation plate is arranged around the tray. The isolation plate and the tray separate the cavity into a first space including the upper surface of the tray and the sprinkler head and a second space including the discharge port. The isolation plate is provided with a uniform flow hole, so that the treatment fluid in the first space enters the second space through the uniform flow hole and is then discharged from the cavity.

2. The wafer processing chamber according to claim 1, wherein: A gap is left between the isolation plate and the tray.

3. The wafer processing chamber according to claim 2, wherein: The isolation plate is an annular flat plate and extends to the side wall of the cavity.

4. The wafer processing chamber according to claim 3, wherein: The height of the isolation plate is less than or equal to the height of the upper surface of the tray and greater than or equal to the height of the lower surface of the tray.

5. The wafer processing chamber according to claim 2, wherein: The isolation plate is an annular inclined plate, and the isolation plate extends to the cavity wall.

6. The wafer processing chamber according to claim 5, wherein: The inner circle of the isolation plate is high and the outer circle is low, and the height of the highest point of the isolation plate is greater than or equal to the height of the lower surface of the tray and less than or equal to the height of the upper surface of the tray.

7. The wafer processing chamber according to claim 5, wherein: The inner circle of the isolation plate is low and the outer circle is high. The height of the lowest point of the isolation plate is greater than or equal to the height of the lower surface of the tray and less than or equal to the height of the upper surface of the tray.

8. The wafer processing chamber according to claim 2, wherein: The isolation plate is an annular bent plate, comprising a horizontal portion and a vertical portion bent upwardly and extending from the horizontal portion, and the isolation plate extends to the top wall of the cavity.

9. The wafer processing chamber according to claim 8, wherein: The height of the horizontal portion of the isolation plate is less than or equal to the height of the upper surface of the pallet and greater than or equal to the height of the lower surface of the pallet.

10. The wafer processing chamber according to claim 9, wherein: The uniform flow holes are opened at the horizontal portion of the isolation plate.

11. The wafer processing chamber according to claim 1, wherein: There are a plurality of uniform flow holes, the position on the isolation plate farthest from the discharge port has the largest opening rate, and the position on the isolation plate closest to the discharge port has the smallest opening rate.

12. The wafer processing chamber according to claim 11, wherein: Each of the uniform flow holes has the same size, the position of the isolation plate farthest from the discharge port has the highest through-hole density, and the position of the isolation plate closest to the discharge port has the lowest through-hole density.

13. The wafer processing chamber according to claim 11, wherein: The multiple uniform flow holes have different sizes, the uniform flow hole farthest from the discharge port is the largest, and the uniform flow hole closest to the discharge port is the smallest.

14. The wafer processing chamber according to claim 13, wherein: The uniform flow holes are waist-shaped holes evenly distributed around the tray, and the widths of the multiple waist-shaped holes are the same. The uniform flow hole farthest from the discharge port is the longest, and the uniform flow hole closest to the discharge port is the shortest.

15. The wafer processing chamber according to claim 11, wherein: The uniform flow holes between the position with the largest opening rate and the position with the smallest opening rate transition gradually.

16. The wafer processing chamber according to claim 1, wherein: The inner circle of the isolation plate is bent downward and inward to below the tray.

17. The wafer processing chamber according to claim 1, wherein: The inner circle of the isolation plate extends downward to the bottom wall of the cavity.

18. The wafer processing chamber according to claim 1, wherein: The processing fluid is plasma or etching fluid.

19. A wafer processing device, characterized in that: include: The outer cavity is provided with a main outlet connected to the air extraction device; a plurality of processing zones disposed in the outer cavity, each of the processing zones being provided with an outlet; a plurality of trays, disposed correspondingly in the plurality of processing areas, for carrying wafers; a plurality of spray heads, correspondingly disposed in the plurality of treatment zones, for spraying treatment fluid; a gas channel, for connecting the outlets of the plurality of processing zones with the main outlet; In which, the multiple processing areas also include partitions arranged around the multiple trays, and the partitions separate the multiple processing areas into at least one first space including the upper surfaces of the multiple trays and the multiple spray heads and at least one second space including the outlet. The partitions are provided with rectifying holes, so that the processing fluid in the first space enters the second space through the rectifying holes and is discharged in sequence through the outlet, the gas channel and the total outlet.

20. The wafer processing apparatus according to claim 19, wherein: The main outlet is arranged on the bottom wall of the outer cavity, and the multiple processing areas are arranged around the main outlet.

21. The wafer processing apparatus according to claim 20, wherein: There are multiple partitions, which separate the multiple processing areas into a first space and multiple second spaces, wherein each partition includes a surrounding portion arranged around each tray and a blocking portion extending downward from the outside of the surrounding portion, the blocking portion extends to the bottom wall of the outer cavity to enclose a second space corresponding to each processing area, the outlet is opened in the blocking portion, each second space includes an outlet of a processing area, the upper surfaces of the trays of the multiple processing areas are all arranged in the same first space, and the rectifying flow hole is opened in the surrounding portion.

22. The wafer processing apparatus according to claim 21, wherein: It also includes a shielding cover, which extends horizontally from the enclosure portion to the side wall of the outer cavity.

23. The wafer processing apparatus according to claim 20, wherein: There are multiple partitions, which divide the multiple processing areas into multiple first spaces and one second space, wherein each partition includes a surrounding portion arranged around the tray and a blocking portion extending upward from the outside of the surrounding portion, and the blocking portion extends to the top wall of the outer cavity to enclose a first space corresponding to each processing area, each first space includes the upper surface of the tray and a sprinkler head of a processing area, and the rectifying flow hole is opened in the surrounding portion; each processing area respectively includes a partition wall arranged around the tray, and the partition wall extends upward from the bottom wall of the outer cavity, and multiple partition walls are arranged in the same second space, and the outlet is opened in the partition wall, and multiple outlets are arranged in the same second space.

24. The wafer processing apparatus according to claim 20, wherein: The partition is a flat plate extending to the side wall of the outer cavity, dividing the multiple processing areas into a first space and a second space, and the upper surfaces of the trays of the multiple processing areas are all located in the first space above the partition; each processing area includes a partition wall arranged around the tray, and the partition wall extends upward from the bottom wall of the outer cavity, and the multiple partition walls are all located in the second space below the partition, the outlet is opened in the partition wall, and the multiple outlets are all arranged in the second space.

25. The wafer processing apparatus according to claim 24, wherein: The partition includes a plurality of surrounding portions arranged around the tray, and the rectifying flow holes are opened in the surrounding portions.

26. The wafer processing apparatus according to claim 21, 23 or 25, wherein: The height of the surrounding portion is lower than the height of the upper surface of the tray and higher than the height of the lower surface of the tray.

27. The wafer processing apparatus according to claim 26, wherein: The opening rate is the largest at a position where the surrounding portion is farthest from the outlet, and the opening rate is the smallest at a position where the surrounding portion is closest to the outlet.

28. The wafer processing apparatus according to claim 19, wherein: There are a plurality of rectifying holes, and a distance between each tray and the rectifying hole closest to the tray is greater than or equal to 1 mm and less than or equal to 78 mm.

29. The wafer processing apparatus according to claim 28, wherein: The sum of the horizontal distance from the center of each tray to the outlet and the horizontal distance from the outlet to the total outlet is greater than the horizontal straight-line distance from the center of each tray to the total outlet.

30. The wafer processing apparatus according to claim 29, wherein: Each processing zone has a plurality of outlets, and the plurality of outlets of each processing zone are evenly distributed around the trays in each processing zone.

31. The wafer processing apparatus according to claim 30, wherein: The number of outlets in each processing zone is two, and the distances between the two outlets of the same processing zone and the total outlet are equal.

32. The wafer processing apparatus according to claim 23 or 24, wherein: A shielding cover is further provided in the outer cavity, and the shielding cover horizontally extends from the partition wall to the side wall of the outer cavity.

33. The wafer processing apparatus according to claim 19, wherein: A gap is left between the partition plate and the tray.

34. The wafer processing apparatus according to claim 19, wherein: The processing fluid is plasma or etching fluid.

35. A wafer processing device, characterized in that: include: external cavity; a plurality of processing zones disposed in the outer cavity, each of the processing zones being provided with an outlet; a plurality of trays, disposed correspondingly in the plurality of processing areas, for carrying wafers; a plurality of spray heads, correspondingly disposed in the plurality of treatment zones, for spraying treatment fluid; In which, each of the processing areas includes a partition plate arranged around each tray, and the partition plate extends downward from the top wall of the outer cavity to separate the multiple processing areas into a first space including the upper surface of the multiple trays and the multiple spray heads and a second space including the outlet. A gap greater than or equal to 1 mm and less than or equal to 78 mm is left between the partition plate and the side wall of the tray, so that the processing fluid enters the second space from the first space through the gap and is discharged through the outlet.

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