Separation device

Abstract

Provided is a separation device capable of suppressing a liquid from remaining inside a plate member during separation. A separation device according to an embodiment comprises a rotation-holding part for holding and rotating a plate member, a first nozzle for injecting a liquid to a side surface of the rotating plate member, and a second nozzle for injecting a gas to the side surface of the rotating plate member.

Description

Separation device

[0001] SUMMARY OF THE INVENTION An embodiment of the present invention relates to a separation device.

[0002] There are cases where a technology for separating plate members is required. For example, a separation device has been proposed that uses a water jet to separate bonded substrates (an example of a plate member), which are a pair of substrates bonded together (see Patent Document 1). In such a separation device, a holding mechanism holds the bonded substrates and rotates the bonded substrates. A high-pressure liquid is then sprayed from a nozzle toward the side surfaces of the bonded substrates. The sprayed liquid penetrates between the substrates (inside the bonded substrates), creating a wedge effect, which separates the bonded substrates.

[0003] However, as the separation of the bonded substrates progresses, it becomes difficult to discharge the liquid that has entered between the substrates to the outside. Because high-pressure liquid is continuously sprayed from the nozzle, if liquid remains between the substrates, the high-pressure liquid sprayed from the nozzle may collide with the remaining liquid. When the high-pressure liquid sprayed from the nozzle collides with the remaining liquid, the kinetic energy of the sprayed liquid is attenuated, which may hinder the progress of separation of the bonded substrates.

[0004] Therefore, there has been a demand for the development of a separation device that can prevent liquid from remaining inside the plate members during separation.

[0005] Japanese Patent Application Laid-Open No. 2000-150456

[0006] The problem to be solved by the present invention is to provide a separation device that can prevent liquid from remaining inside plate members during separation.

[0007] The separation device according to the embodiment includes a rotating holding unit that holds and rotates a plate member, a first nozzle that sprays a liquid onto the side of the rotating plate member, and a second nozzle that sprays a gas onto the side of the rotating plate member.

[0008] According to an embodiment of the present invention, a separation device is provided that can prevent liquid from remaining inside plate members during separation.

[0009] Fig. 2 is a schematic diagram illustrating a separation device according to the present embodiment. Fig. 3 is a schematic perspective view of the separation device in Fig. 1 as seen from the AA direction. Fig. 4 is a schematic diagram illustrating separation of a plate member. Fig. 5 is a schematic diagram illustrating separation of a plate member. Fig. 6 is a schematic diagram illustrating separation of a plate member.

[0010] Hereinafter, embodiments will be illustrated with reference to the drawings. In the drawings, like components are designated by like reference numerals and detailed descriptions thereof will be omitted where appropriate.

[0011] The plate member separated by the separating apparatus 1 according to this embodiment is a bonded substrate 100. The bonded substrate 100 has, for example, a substrate 101 and a substrate 102 bonded to one side of the substrate 101. There are no particular limitations on the substrates 101 and 102 as long as they are plate-shaped. The substrates 101 and 102 can be, for example, semiconductor wafers, substrates containing inorganic materials such as quartz or ceramics, or substrates containing metal.

[0012] In the following, as an example, a case will be described in which the substrates 101 and 102 are semiconductor wafers. A porous layer is provided on one surface of the substrate 101, and a single-crystal Si layer is provided on the porous layer. A single-crystal Si layer is provided on one surface of the substrate 102. An insulating layer is provided on the single-crystal Si layer of the substrate 101 or on the single-crystal Si layer of the substrate 102. The substrates 101 and 102 are bonded together via the insulating layer. However, the bonded substrate 100 is not limited to the example shown. The bonded substrate 100 may be any substrate in which the substrate 101 and the substrate 102 are bonded together. The plate member may be two plates bonded together and separated by the separation device 1, or an integral plate that is separated (divided) into two pieces by the separation device 1.

[0013] FIG. 1 is a schematic diagram illustrating a separating apparatus 1 according to the present embodiment. FIG. 2 is a schematic perspective view of the separating apparatus 1 in FIG. 1 as viewed from the A-A direction. To avoid complexity, FIG. 2 omits elements other than the bonded substrate 100, the chuck 21, the support unit 22, the separating unit 40 (nozzle 41: equivalent to an example of a first nozzle, moving unit 43), and the liquid removing unit 50 (nozzle 51: equivalent to an example of a second nozzle). As shown in FIG. 1, the separating apparatus 1 is provided with, for example, a base 10, a rotating and holding unit 20, a positioning unit 30, the separating unit 40, the liquid removing unit 50, and a controller 60.

[0014] The base 10 can be provided, for example, at the installation location of the separation device 1. A rotation holding unit 20, a positioning unit 30, a separation unit 40, and a liquid removal unit 50 can be provided on one side of the base 10. In addition, a base 10a can be provided opposite the base 10. A chuck 21, a support unit 22, a chuck 23, a drive unit 24, and a movement unit 25, which will be described later, are provided between the base 10a and the base 10. The base 10a can be integrated with the base 10 via, for example, a stand (not shown) or the like.

[0015] The rotation holding unit 20 holds and rotates the bonded substrate 100 formed by bonding together a pair of substrates 101 and 102. The rotation holding unit 20 includes, for example, a chuck 21, a support unit 22, a chuck 23, a drive unit 24, a moving unit 25, and an exhaust unit 26.

[0016] The chuck 21 is provided on the substrate 101 side of the bonded substrate 100. The chuck 21 suction-holds one surface (the surface on the substrate 101 side) of the bonded substrate 100. The chuck 21 can be, for example, a vacuum chuck. For example, a suction hole is opened in the surface of the chuck 21 on the bonded substrate 100 side. An exhaust unit 26 is connected to the suction hole.

[0017] The support portion 22 rotatably supports the chuck 21. The support portion 22 is provided on, for example, the base 10a. The support portion 22 has, for example, a rotation shaft 22a and a rotation mechanism 22b.

[0018] The rotating shaft 22a extends along the central rotation axis 1a of the separation device 1. A chuck 21 is provided on one end side of the rotating shaft 22a. The other end side of the rotating shaft 22a is connected to a rotation mechanism 22b.

[0019] The rotation mechanism 22b rotates the chuck 21 in synchronization with the chuck 23, which will be described later. The rotation mechanism 22b has a synchronization transmission member such as a timing belt or a timing pulley. The synchronization transmission member is connected to the rotation shaft 22a on which the chuck 21 is provided and to a drive unit 24, which will be described later. In this manner, the drive unit 24 can rotate the chuck 21 simultaneously with the chuck 23, which will be described later, at the same rotation speed. This allows for a simplification of the configuration of the rotation mechanism 22b and the control program, which in turn allows for a reduction in the manufacturing cost of the separation device 1.

[0020] The chuck 23 is provided on the substrate 102 side of the bonded substrate 100. The chuck 23 suction-holds the other surface of the bonded substrate 100 (the surface opposite to the surface on the substrate 101 side). The chuck 23 can be, for example, a vacuum chuck. For example, a suction hole is opened in the surface of the chuck 23 on the bonded substrate 100 side. An exhaust unit 26 is connected to the suction hole. As shown in FIG. 1 , the chuck 23 suction-holds the surface of the bonded substrate 100 on the lower side in the direction of gravity. Therefore, after the bonded substrate 100 is separated into the substrate 101 and the substrate 102, the chuck 23 holds the substrate 102 on the lower side in the direction of gravity.

[0021] The drive unit 24 rotates the chuck 23 and also rotates the chuck 21 in synchronization with the chuck 23 via the rotation mechanism 22b and the rotation shaft 22a. Therefore, the drive unit 24 can rotate the bonded substrate 100 held by the chuck 23 and the chuck 21. The drive unit 24 can also control the rotation speed of the bonded substrate 100 and start and stop the rotation. The drive unit 24 can include, for example, a control motor such as a servo motor and a rotation shaft 24a. The chuck 23 is provided on one end side of the rotation shaft 24a. The other end side of the rotation shaft 24a is connected to the control motor via a transmission member or the like.

[0022] 1, the central axis of the rotation shaft 22a, the central axis of the chuck 21, the central axis of the chuck 23, and the central axis of the rotation shaft 24a overlap with the rotation central axis 1a. That is, these central axes are arranged to be coaxial. Therefore, when the bonded substrate 100 is rotated, it is possible to prevent the relative positions of the chuck 21 and the chuck 23 from shifting in the direction perpendicular to the rotation central axis 1a.

[0023] The moving unit 25 moves the driving unit 24 in a direction along the rotation central axis 1a. The moving unit 25, for example, raises and lowers the driving unit 24. Since the driving unit 24 (rotation axis 24a) is provided with a chuck 23, the distance between the chuck 23 and the chuck 21 in the direction along the rotation central axis 1a can be changed by moving the driving unit 24 with the moving unit 25. Therefore, the moving unit 25 can hold and release the bonded substrate 100 by the chuck 23 and the chuck 21. The moving unit 25 can have, for example, a driving mechanism such as an air cylinder or a hydraulic cylinder, and a guide mechanism for moving the driving unit 24 linearly.

[0024] The exhaust unit 26 is connected to the chuck 21 via a piping member such as a rotary joint provided on the support unit 22. The exhaust unit 26 sucks gas between the chuck 21 and the bonded substrate 100 (substrate 101) so that the pressure between the chuck 21 and the bonded substrate 100 (substrate 101) becomes negative. The exhaust unit 26 is also connected to the chuck 23 via a piping member such as a rotary joint provided on the drive unit 24. The exhaust unit 26 sucks gas between the chuck 23 and the bonded substrate 100 (substrate 102) so that the pressure between the chuck 23 and the bonded substrate 100 (substrate 102) becomes negative. The exhaust unit 26 has an exhaust device such as a vacuum pump.

[0025] Furthermore, a gas-liquid separator may be provided between the chucks 21 and 23 and an exhaust device such as a vacuum pump.

[0026] Furthermore, a pressure control device can be provided at least between the chuck 21 and the gas-liquid separator and between the chuck 23 and the gas-liquid separator. If a pressure control device is provided, it becomes possible to control the suction forces of the chucks 21 and 23.

[0027] The positioning unit 30 positions the bonded substrate 100 in a direction perpendicular to the rotation center axis 1a. The positioning unit 30 aligns the position of the bonded substrate 100 so that the center of the bonded substrate 100 overlaps with the rotation center axis 1a of the separation device 1 in a plan view. Therefore, the rotation center axis of the bonded substrate 100 after positioning can be the rotation center axis 1a.

[0028] The positioning portion 30 has, for example, a pin 31, an arm 32, a moving portion 33, a moving portion 34, a guide 35, and an absorbing portion 36. A plurality of sets of the pin 31, the arm 32, the moving portion 33, the guide 35, and the absorbing portion 36 can be provided.

[0029] The pin 31 has, for example, a columnar shape and extends in a direction along the rotation central axis 1a. The side surface of the pin 31 contacts the side surface of the laminated substrate 100. The pin 31 can be provided, for example, at the upper end of the arm 32. When viewed from the direction along the rotation central axis 1a, the multiple pins 31 can be provided at positions that are rotationally symmetric with respect to the rotation central axis 1a.

[0030] The arm 32 is plate-shaped and extends in a direction along the rotational axis 1a. The moving unit 33 moves the arm 32 in the direction along the rotational axis 1a. For example, the moving unit 33 raises and lowers the arm 32. The moving unit 33 has a driving mechanism such as an air cylinder or a hydraulic cylinder.

[0031] One moving unit 34 can be provided for each of the multiple arms 32. The moving unit 34 has, for example, a link mechanism or a cam mechanism, and simultaneously changes the positions of the multiple arms 32 in a direction perpendicular to the rotation center axis 1a. For example, the moving unit 34 moves the multiple arms 32 toward the rotation center axis 1a, causing the multiple pins 31 to press the side surfaces of the bonded substrate 100 toward the rotation center axis 1a. The multiple pins 31 press the side surfaces of the bonded substrate 100 toward the rotation center axis 1a, causing the center of the bonded substrate 100 to overlap the rotation center axis 1a in a planar view. In other words, the bonded substrate 100 is positioned. Furthermore, for example, the moving unit 34 moves the multiple arms 32 in a direction away from the rotation center axis 1a, thereby separating the multiple pins 31 from the side surfaces of the bonded substrate 100.

[0032] The guides 35 are provided between each of the multiple arms 32 and the moving unit 34. The guides 35 guide the movement of the arms 32 in the direction along the rotation central axis 1a. The guides 35 may be, for example, linear guides. If the guides 35 are provided, the relative positions between the arms 32 and the moving unit 34 in the direction along the rotation central axis 1a can be changed as desired.

[0033] The absorbing portion 36 is provided between the arm 32 and the moving portion 33. The absorbing portion 36 absorbs changes in position between the arm 32 and the moving portion 33 in a direction perpendicular to the rotation center axis 1 a. The absorbing portion 36 may include an elastic body such as rubber or a spring. If the absorbing portion 36 is provided, the moving portion 34 can absorb the amount of misalignment even if the position between the moving portion 33 and the arm 32 is misaligned in the direction perpendicular to the rotation center axis 1 a.

[0034] The separating unit 40 sprays a high-pressure liquid 40a onto the side surface of the rotating bonded substrate 100 to separate the bonded substrate 100 into the substrate 101 and the substrate 102. The liquid 40a is sprayed toward a layer (e.g., a porous layer or a single-crystal Si layer) provided between the substrate 101 and the substrate 102. The liquid 40a can be, for example, water such as ultrapure water. When the liquid 40a is water, the separating unit 40 can be a so-called water jet device.

[0035] The separation unit 40 includes, for example, a nozzle 41, a supply unit 42, and a movement unit 43. The nozzle 41 sprays the liquid 40a onto the side of the rotating bonded substrate 100. The nozzle 41 is cylindrical and has an injection port 41a at one end. The diameter of the injection port 41a is, for example, about 0.1 mm to 1 mm. The radial width (thickness) of the end of the nozzle 41 where the injection port 41a is provided is, for example, about 1 cm to 5 cm. By configuring the width of the end of the nozzle 41 in this manner, damage to the nozzle 41 can be suppressed even when the liquid 40a is sprayed at high pressure. In the direction along the rotation center axis 1a, the central axis of the injection port 41a of the nozzle 41 is located between the substrate 101 and the substrate 102. Furthermore, the central axis of the injection port 41a of the nozzle 41 can be, for example, approximately parallel to the surface of the chuck 23 facing the bonded substrate 100.

[0036] The supply unit 42 supplies high-pressure liquid 40a to the nozzle 41. The pressure of the liquid 40a sprayed from the nozzle 41 is, for example, about 15 MPa to 90 MPa. The flow rate of the liquid 40a is about 60 mL / min to 150 mL / min.

[0037] The supply unit 42 is connected, for example, via a high-pressure pipe, to the end of the nozzle 41 opposite to the end where the injection port 41 a is provided. The supply unit 42 may be provided with, for example, a tank for storing the liquid 40 a, a high-pressure pump for supplying the liquid 40 a stored in the tank to the nozzle 41, a control valve for controlling the flow rate and pressure of the liquid 40 a supplied to the nozzle 41, and a switching valve for switching between supplying and stopping the supply of the liquid 40 a.

[0038] The moving unit 43 moves the position of the nozzle 41 (jet nozzle 41a) between, for example, a direction along a tangent to the periphery of the bonded substrate 100 and a direction toward the rotation center axis (for example, rotation center axis 1a) of the bonded substrate 100. The moving unit 43 can be, for example, an XY table or a robot capable of control on two or more axes. The moving unit 43 can be provided on the base 10 via, for example, a stand 43a.

[0039] 1 , the bonded substrate 100 is held substantially horizontally by the chuck 21 and the chuck 23. Therefore, the liquid 40a that is ejected from the nozzle 41 and that has entered between the substrates 101 and 102 is difficult to discharge to the outside of the bonded substrate 100. Since the liquid 40a is continuously ejected from the nozzle 41, if the liquid 40a remains between the substrates 101 and 102, the liquid 40a ejected from the nozzle 41 may collide with the remaining liquid 40a. When the ejected liquid 40a collides with the remaining liquid 40a, the kinetic energy of the ejected liquid 40a is attenuated. When the kinetic energy of the ejected liquid 40a is attenuated, the progress of separation between the substrates 101 and 102 may be hindered. In this case, if the ejection pressure of the liquid 40a is increased to increase the kinetic energy of the liquid 40a, the force applied to at least one of the substrates 101 and 102 will increase, which may damage at least one of the substrates 101 and 102.

[0040] Furthermore, the liquid 40a sprayed from the nozzle 41 may accumulate on the bonded substrate 100. In this case, as the separation of the substrates 101 and 102 progresses and a gap forms between the substrates 101 and 102, the weight of the liquid 40a accumulated on the bonded substrate 100 may cause the periphery of the upper substrate 101 to bend downward. For example, if the substrate 101 is a semiconductor wafer, it may have a thickness of 800 μm or less, which is very thin. Therefore, if the substrate 101 is a semiconductor wafer, the weight of the liquid 40a accumulated on the bonded substrate 100 may cause the periphery of the substrate 101 to bend downward.

[0041] On the other hand, the liquid 40a adhering to the underside of the substrate 102 easily falls off, so the weight of the adhering liquid 40a hardly causes bending of the substrate 102. Therefore, when the peripheral edge of the substrate 101 bends downward, the gap between the substrates 101 and 102 narrows, making it difficult for the ejected liquid 40a to reach the central region of the bonded substrate 100. If it becomes difficult for the ejected liquid 40a to reach the central region of the bonded substrate 100, the progress of separation between the substrates 101 and 102 may be hindered. Furthermore, the liquid 40a ejected from the nozzle 41 may collide with the bent substrate 101, causing deformation or damage to the substrate 101.

[0042] Therefore, the separating apparatus 1 is provided with a liquid removal unit 50. As shown in FIGS. 1 and 2, the liquid removal unit 50 has, for example, a nozzle 51 and a supply unit 52. The nozzle 51 sprays a gas 50a onto the side surface of the rotating bonded substrate 100. For example, the nozzle 51 sprays the gas 50a toward the gap between the separated substrates 101 and 102. There are no particular limitations on the gas 50a, as long as it does not react with the materials of the substrates 101 and 102. The gas 50a can be, for example, an inert gas such as nitrogen gas or a rare gas, or CDA (Clean Dry Air).

[0043] The spray pattern of the nozzle 51 can be appropriately selected depending on the rigidity of the substrates 101 and 102, the size of the gap formed between the substrates 101 and 102, and the like.

[0044] For example, when the spray pattern is a straight type or a cone type, the directivity of the sprayed gas 50a can be increased and the flow rate can be increased. As a result, large kinetic energy can be applied to the liquid 40a remaining between the substrates 101 and 102 and the liquid 40a adhering to the bonded substrate 100. However, since the kinetic energy of the sprayed gas 50a is large, the force applied to the separated substrates 101 and 102 is also large.

[0045] For example, when the spray pattern is a flat type or a curtain type, the spray pattern may be one in which the dimension in the direction along the rotational axis 1a of the bonded substrate 100 is small and the dimension in the direction intersecting the rotational axis 1a of the bonded substrate 100 is large. For example, the injection port 51a opening at the end of the nozzle 51 on the bonded substrate 100 side may be configured so that the dimension in the direction along the rotational axis 1a of the bonded substrate 100 is smaller than the dimension in the direction intersecting the rotational axis 1a.

[0046] In the case of the above-described flat type, curtain type, or other spray pattern, the flow velocity of the sprayed gas 50a is slower than in the case of the straight type, etc. Therefore, the kinetic energy of the sprayed gas 50a can be prevented from increasing, and the force applied to the separated substrates 101 and 102 can be reduced.

[0047] Therefore, for example, in the case of a metal plate or a thick substrate, any type of spray pattern may be used. In this case, in consideration of the discharge and removal of the liquid 40a over a wide area, a spray pattern such as a flat type or curtain type with a large spray area of ​​the gas 50a is preferable.

[0048] For example, in the case of a semiconductor wafer or a thin substrate, it is preferable to use a flat type or curtain type spray pattern, etc. In this way, the liquid 40a can be discharged or removed over a wide area, and damage or deformation of at least one of the substrates 101 and 102 can be suppressed.

[0049] The supply unit 52 supplies pressurized gas 50a to the nozzle 51. The supply pressure of the gas 50a can be set appropriately depending on the rigidity of the substrates 101 and 102. For example, the supply pressure of the gas 50a may be determined by conducting experiments or simulations to be a pressure that can discharge or remove the liquid 40a between the substrates 101 and 102 and on the bonded substrate 100, and that can prevent at least one of the substrates 101 and 102 from being damaged or deformed. For example, in the case of a semiconductor wafer or the like, the supply pressure of the gas 50a can be set to 0.7 MPa or less.

[0050] The pressure and flow rate of the gas 50a can be constant, or can be changed depending on the degree to which the substrates 101 and 102 are opened during separation, the progress of separation, and other conditions. For example, the pressure and flow rate of the gas 50a can be increased as separation of the peripheral region of the bonded substrate 100 progresses. In the case of semiconductor wafers or thin plate materials, the amount of deflection of at least one of the substrates 101 and 102 can be detected using a displacement meter or the like. If a deflection amount that may cause damage to at least one of the substrates 101 and 102 is detected, the supply pressure and flow rate of the gas 50a can be reduced.

[0051] The supply unit 52 is connected, for example, via a pipe, to the end of the nozzle 51 opposite to the end where the injection port is provided. The supply unit 52 may be provided with, for example, a cylinder or factory pipe storing compressed gas 50a, a control valve for controlling the flow rate and pressure of the gas 50a supplied to the nozzle 51, and a switching valve for switching between supplying and stopping the supply of the gas 50a.

[0052] The nozzle 51 can be provided, for example, in the moving unit 43 described above. When the nozzle 51 is provided in the moving unit 43, the nozzle 41 and the nozzle 51 move together. However, the nozzle 51 can also be provided in a moving unit separate from the moving unit 43. In this case, the moving unit in which the nozzle 51 is provided can be the same as the moving unit 43 described above. If the nozzle 51 is provided in a moving unit separate from the moving unit 43, the operations of the nozzle 41 and the nozzle 51 can be controlled individually. On the other hand, if the nozzle 41 and the nozzle 51 are provided in a common moving unit 43, the configuration of the separation device 1 can be simplified, the separation device 1 can be made smaller, and the control program can be simplified, which ultimately allows for a reduction in the manufacturing cost of the separation device 1.

[0053] Alternatively, the nozzle 51 may be fixed at a predetermined position. However, if the nozzle 41 and the nozzle 51 move together or if the nozzle 51 moves following the nozzle 41, the gas 50a can be sprayed near the area where the liquid 40a has been sprayed. This makes it possible to efficiently discharge the liquid 40a remaining between the substrates 101 and 102 and to efficiently remove the liquid 40a adhering to the substrates 101 and 102.

[0054] 1 and 2, the nozzle 41 and the nozzle 51 can be arranged side by side in a plane that is approximately perpendicular to the central axis 1a of rotation of the bonded substrate 100. The nozzle 41 and the nozzle 51 are also arranged so that their axes are parallel to each other. This prevents the gas 50a supplied from the nozzle 51 from colliding with the liquid 40a ejected from the nozzle 41, and therefore allows the liquid 40a to penetrate between the substrates 101 and 102 without being hindered, and allows the separation of the bonded substrate 100 to proceed.

[0055] Also, it is possible to provide at least one nozzle 51. For example, the nozzle 51 illustrated in Fig. 2 and Figs. 3 to 5 described later is provided downstream of the nozzle 41 in the rotation direction of the bonded substrate 100, but the nozzle 51 may be provided upstream of the nozzle 41. Also, it is possible to provide a nozzle 51 both downstream of the nozzle 41 and upstream of the nozzle 41.

[0056] When the nozzle 51 is provided downstream of the nozzle 41 in the rotation direction of the bonded substrate 100, the liquid 40a remaining between the substrates 101 and 102, which is ejected from the nozzle 41, can be removed by the gas 50a, and the liquid 40a pooled on the bonded substrate 100 can be immediately removed. This causes the peripheral edge of the bonded substrate 100 to bend downward, preventing the peripheral edges of the substrates 101 and 102 from closing. As a result, the liquid 40a ejected from the nozzle 41 is less likely to penetrate between the substrates 101 and 102, preventing the separation from being hindered.

[0057] Alternatively, when the nozzle 51 is provided upstream of the nozzle 41 in the rotation direction of the bonded substrate 100, the liquid 40a can be sprayed onto the side surface of the bonded substrate 100 immediately after the gas 50a has removed the liquid 40a remaining between the substrates 101 and 102. This makes it possible to remove the remaining liquid 40a immediately before spraying the liquid 40a, thereby reducing the risk of the sprayed liquid 40a colliding with the remaining liquid 40a.

[0058] Furthermore, by supplying the gas 50a between the substrates 101 and 102, the peripheral edges of the substrates 101 and 102 are opened, and immediately thereafter the liquid 40a can be sprayed. This makes it easier for the sprayed liquid 40a to penetrate between the substrates 101 and 102, allowing separation to proceed more efficiently.

[0059] The controller 60 includes, for example, a calculation unit such as a CPU (Central Processing Unit) and a storage unit such as a memory. The controller 60 is, for example, a computer. The controller 60 controls the operation of each element provided in the separation device 1 based on a control program stored in the storage unit.

[0060] Next, the operation of the separating device 1, that is, the separation of the bonded substrate 100, which is an example of a plate member, will be described. Figures 3 to 5 are schematic diagrams illustrating the separation of the bonded substrate 100. Note that the shaded areas in Figures 3 to 5 represent the separated areas. Also, Figures 3 to 5 show the case where the nozzle 41 and the nozzle 51 move together. When the nozzle 41 and the nozzle 51 move separately, the nozzle 51 can be made to operate in the same manner as the nozzle 41.

[0061] In the process of separating the bonded substrate 100, first, the chucks 21 and 23 are rotated, thereby rotating the bonded substrate 100 held by suction on the chucks 21 and 23.

[0062] Next, as shown by the solid line nozzle 41 in FIG. 3 , the nozzle 41, which was positioned at the standby position [a], is moved to the vicinity of the periphery of the bonded substrate 100 and positioned at the separation start position [b]. The separation start position [b] is a predetermined position on the side surface of the bonded substrate 100 from the nozzle 41, where the central axis of the ejection port 41a of the nozzle 41 overlaps with a tangent to the periphery of the bonded substrate 100. The nozzle 41 positioned at the separation start position [b] ejects the liquid 40a between the substrates 101 and 102. At this time, since the bonded substrate 100 is rotating, the liquid 40a can be ejected between the substrates 101 and 102 over the entire periphery of the bonded substrate 100. Therefore, separation can be performed over the entire periphery of the bonded substrate 100.

[0063] Furthermore, since the nozzle 51 moves together with the nozzle 41, the nozzle 51 also moves to the vicinity of the periphery of the bonded substrate 100. Then, the gas 50a is sprayed from the nozzle 51 toward the side surface of the bonded substrate 100. At this time, since the bonded substrate 100 is rotating, the gas 50a can be sprayed between the substrates 101 and 102 over the entire periphery of the bonded substrate 100. Therefore, the liquid 40a remaining between the substrates 101 and 102 is discharged to the outside of the bonded substrate 100. Furthermore, since the gas 50a also flows on the upper and lower surfaces of the bonded substrate 100, the liquid 40a adhering to the upper and lower surfaces is discharged to the outside of the bonded substrate 100.

[0064] 4 and 5, the separation of the bonded substrate 100 is advanced by moving the central axis of the ejection port 41a of the nozzle 41 toward a separation position [c] toward the center of the bonded substrate 100, thereby separating the bonded substrate 100 into the substrate 101 and the substrate 102. For example, as shown in Fig. 4, the nozzle 41 and the nozzle 51 are moved so as to follow the separated region, and in the region between the periphery and the central region of the bonded substrate 100, the substrates 101 and 102 can be separated by ejecting the liquid 40a, and the liquid 40a can be discharged and removed by ejecting the gas 50a.

[0065] 5 , the nozzle 41 is positioned at the separation position [c], and the liquid 40a is sprayed from the nozzle 41 toward the center of the bonded substrate 100, thereby performing separation in the central region of the bonded substrate 100. Furthermore, the gas 50a is sprayed from the nozzle 51, thereby discharging and removing the liquid 40a in the central region of the bonded substrate 100.

[0066] In such a separation process of the bonded substrate 100, the nozzle 41 can be moved in an arc-shaped trajectory from the separation start position [b] to the separation position [c] at the center of the bonded substrate 100, as shown in Fig. 3. Furthermore, the nozzle 41 is moved so that the distance d between the nozzle 41 and the bonded substrate 100 is kept substantially constant. If the nozzle 41 is moved so that the distance d is kept substantially constant, the ejection port 41a of the nozzle 41 can be brought as close as possible to the side surface of the bonded substrate 100. Furthermore, since the nozzle 51 moves together with the nozzle 41, the nozzle 51 can also be moved in a similar trajectory.

[0067] Furthermore, since the liquid 40a is sprayed while the nozzle 41 is moved along the arc-shaped trajectory, the liquid 40a is sprayed toward a partial region Ra of the periphery of the bonded substrate 100. Furthermore, since the nozzle 51 moves together with the nozzle 41, the gas 50a is sprayed toward the region Ra. Note that the region Ra is a region that includes an arc with a central angle of 90 degrees on the periphery of the bonded substrate 100. Even if the liquid 40a is sprayed toward such a partial region Ra of the circumference, since the bonded substrate 100 is rotating, the liquid 40a is sprayed over the entire circumference of the bonded substrate 100, and separation can be performed in the entire region of the bonded substrate 100.

[0068] Next, as shown in Fig. 5, when separation has progressed to the center of the bonded substrate 100, the spraying of the liquid 40a from the nozzle 41 is stopped, and the spraying of the gas 50a from the nozzle 51 is stopped. After separation of the bonded substrate 100 is completed, the nozzles 41 and 51 move to a standby position [a] separated from the bonded substrate 100 (see Fig. 3). Then, the rotation of the chucks 21 and 23 is stopped, thereby stopping the rotation of the bonded substrate 100 that has now been separated. In this manner, the bonded substrate 100 can be separated.

[0069] The above embodiments have been described as examples. However, the present invention is not limited to these descriptions. For example, the above embodiments illustrate a separation device 1 in which the rotation axis 1a extends in a substantially vertical direction. However, the present invention can also be applied to a separation device in which the rotation axis 1a extends in a substantially horizontal direction. Regarding the above embodiments, those skilled in the art may add, delete, or modify components, or add, omit, or modify processes as appropriate, and such modifications are within the scope of the present invention as long as they incorporate the features of the present invention. For example, the shape, dimensions, materials, and arrangement of each element of the separation device 1 are not limited to those illustrated and can be modified as appropriate. Furthermore, the elements of the above-described embodiments can be combined to the greatest extent possible, and such combinations are also within the scope of the present invention as long as they incorporate the features of the present invention.

[0070] 1 Separation device, 1a Rotation central axis, 20 Rotation holding part, 21 Chuck, 23 Chuck, 26 Exhaust part, 40 Separation part, 40a Liquid, 41 Nozzle, 50 Liquid removal part, 51 Nozzle, 51a Injection port, 60 Controller, 100 Bonded substrate, 101 Substrate, 102 Substrate

Claims

1. A separation device comprising: a rotary holding unit that holds and rotates a plate member; a first nozzle that sprays a liquid onto the side of the rotating plate member; and a second nozzle that sprays a gas onto the side of the rotating plate member.

2. A separating apparatus according to claim 1, wherein said second nozzle is provided upstream of said first nozzle in the direction of rotation of said plate member.

3. A separation device according to claim 1, wherein said second nozzle is provided downstream of said first nozzle in the direction of rotation of said plate member.

4. A separation device according to any one of claims 1 to 3, wherein the first nozzle and the second nozzle are provided so that their axes are parallel to each other.

5. A separation device described in any one of claims 1 to 3, wherein the dimension of the injection port opening at the end of the second nozzle on the plate member side in the direction along the central axis of rotation of the plate member is smaller than the dimension in the direction intersecting the central axis of rotation.

6. A separation device according to any one of claims 1 to 3, wherein the spray pattern of the second nozzle is a flat type or a curtain type.

7. A separation device according to any one of claims 1 to 3, further comprising a first moving unit that moves the first nozzle between a direction along the tangent to the peripheral edge of the plate member held by the rotation holding unit and a direction toward the central axis of rotation of the plate member, and the second nozzle is provided on the first moving unit.

8. A separation device according to any one of claims 1 to 3, further comprising: a first moving unit that moves the first nozzle between a direction along the tangent to the peripheral edge of the plate member held by the rotation holding unit and a direction toward the central axis of rotation of the plate member; and a second moving unit that moves the second nozzle following the first nozzle.

9. A separating apparatus according to any one of claims 1 to 3, wherein the pressure or flow rate of the gas injected from the second nozzle changes in accordance with the progress of separation of the plate members.

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