Transfer film, semiconductor package, and method for manufacturing semiconductor package

Abstract

The present invention addresses the problem of providing a transfer film containing a composition layer such that the obtained film has a low coefficient of linear expansion and cracking does not readily occur. The transfer film according to the present invention includes a temporary support and a composition layer, wherein the composition layer includes an organopolysiloxane, the organopolysiloxane including a unit represented by formula (1) and a unit represented by formula (2), and the content of the unit represented by formula (2) is 20 mol% to 80 mol% of all units of the organopolysiloxane.　Formula (1): Ra-SiO3 / 2 Formula (2): Rb 2-SiO2 / 2

Description

Transfer film, semiconductor package, and semiconductor package manufacturing method

[0001] The present invention relates to a transfer film, a semiconductor package, and a method for manufacturing a semiconductor package.

[0002] Photosensitive materials are used in interlayer insulating films within semiconductor chips, connection layers with printed wiring boards (for example, build-up layers and interposers), and the like.

[0003] For example, Patent Document 1 discloses a composition having a predetermined structure as a photosensitive material.

[0004] Japanese Patent Application Laid-Open No. 2022-161019

[0005] The present inventors have studied a composition layer formed using a composition having a configuration as described in Patent Document 1, and have found that it is difficult to achieve both a low linear expansion coefficient of a film obtained from the composition layer and a low susceptibility to cracks in the composition layer.

[0006] Therefore, an object of the present invention is to provide a transfer film including a composition layer, which has a low linear expansion coefficient and is less susceptible to cracking, as well as a semiconductor package and a method for manufacturing the semiconductor package.

[0007] As a result of extensive research into solving the above problems, the present inventors have found that the above problems can be solved by the following configuration, and have completed the present invention.

[0008] [1] A transfer film comprising a temporary support and a composition layer, wherein the composition layer comprises an organopolysiloxane, wherein the organopolysiloxane comprises a unit represented by formula (1) described below and a unit represented by formula (2) described below, and the content of the unit represented by formula (2) is 20 to 80 mol % based on all units of the organopolysiloxane. [2] The transfer film according to [1], wherein a diffraction peak showing a maximum value in a diffraction angle 2θ range of 18° or more is observed in an X-ray diffraction spectrum obtained by an X-ray diffraction method of a film obtained by method A. Method A: A laminate having the composition layer on a substrate is obtained using the transfer film according to [1], and the composition layer in the laminate is heat-treated at 200°C for 1.5 hours, then immersed in 2M hydrochloric acid for 8 hours, rinsed with water, and peeled from the laminate from the substrate to obtain the film. [3] The transfer film according to [1] or [2], wherein a diffraction peak showing a maximum value in the range of a diffraction angle 2θ of 20° or more is observed in the X-ray diffraction spectrum of the film obtained by the X-ray diffraction method. Method A: A laminate having the composition layer is obtained on a substrate using the transfer film according to [1] or [2], and the composition layer in the laminate is heat-treated at 200°C for 1.5 hours, immersed in 2M hydrochloric acid for 8 hours, rinsed with water, and peeled from the substrate to obtain the film. [4] The transfer film according to any one of [1] to [3], wherein the group having a mesogen group contains one or more rings, and the total number of monocyclic ring structures in the one or more rings is 3 or more. [5] The transfer film according to any one of [1] to [4], wherein the group having a mesogen group contains one or more rings, and the total number of monocyclic ring structures in the one or more rings is 4 or more. [6] The transfer film according to any one of [1] to [5], wherein the group having a mesogen group has a heteroatom. [7] The transfer film according to any one of [1] to [6], wherein the content of the unit represented by formula (1) is 50 mol % or more relative to the total amount of the unit represented by formula (T) described below in the organopolysiloxane.[8] The transfer film according to any one of [1] to [7], wherein the content of the unit represented by formula (2) is 50 mol % or more relative to the total amount of units represented by formula (D) described below in the organopolysiloxane. [9] The transfer film according to any one of [1] to [8], wherein the content of the organopolysiloxane is 50 mass % or more relative to the total mass of the composition layer.

[10] A semiconductor package comprising the composition layer in the transfer film according to any one of [1] to [9].

[11] A method for producing a semiconductor package, comprising: a step Z1 of forming a composition layer on a substrate using the transfer film according to any one of [1] to [9]; and a step Z2 of forming a pattern having vias in the composition layer.

[12] A method for producing a semiconductor package, comprising: a step Z11 of forming a composition layer on a substrate using the transfer film according to any one of [1] to [9]; a step Z12 of heating or exposing the composition layer; and a step Z13 of forming a pattern having vias in the heated or exposed composition layer using a laser, the method comprising a step Z14 of removing the temporary support either before the step Z12, between the step Z12 and the step Z13, or after the step Z13.

[0009] According to the present invention, it is possible to provide a transfer film including a composition layer, which has a low linear expansion coefficient and is less susceptible to cracking, as well as a semiconductor package and a method for manufacturing the semiconductor package.

[0010] FIG. 2 is a schematic diagram illustrating an example of a layer structure of a transfer film.

[0011] The present invention will be described in detail below. In this specification, a numerical range expressed using "to" means a range that includes the numerical values ​​before and after "to" as the lower and upper limits. In addition, in the numerical ranges described in stages in this specification, the upper limit or lower limit described in a certain numerical range may be replaced with the upper limit or lower limit of another numerical range described in stages. In addition, in the numerical ranges described in this specification, the upper limit or lower limit described in a certain numerical range may be replaced with a value shown in the examples.

[0012] Furthermore, the term "process" in this specification does not only refer to an independent process, but also includes a process that cannot be clearly distinguished from other processes as long as the intended purpose of the process is achieved.

[0013] In this specification, unless otherwise specified, the temperature condition may be 25° C. For example, the temperature when performing each step may be 25° C. unless otherwise specified.

[0014] In this specification, the bonding direction of the divalent group (for example, —O—CO—) is not particularly limited. １ｚ -L ２ｚ -L ３ｚ In the bond ２ｚ When is —O—CO—, L １ｚ The position where it is bonded to the side is *1, L ３ｚ If the position bonded to the side is *2, then L ２ｚ may be *1-O-CO-*2 or *1-CO-O-*2.

[0015] In this specification, "transparent" means that the average transmittance of visible light in the wavelength range of 400 to 700 nm is 80% or more, and preferably 90% or more. The average transmittance of visible light is a value measured using a spectrophotometer, and can be measured using, for example, a spectrophotometer U-3310 manufactured by Hitachi, Ltd.

[0016] In this specification, "actinic rays" and "radiation" refer to the bright line spectrum of a mercury lamp, such as g-rays, h-rays, and i-rays, far ultraviolet rays typified by excimer lasers, extreme ultraviolet rays (EUV light), X-rays, and electron beams (EB). In this specification, "light" refers to actinic rays or radiation.

[0017] In this specification, unless otherwise specified, "exposure" includes not only exposure using a mercury lamp, far ultraviolet light represented by an excimer laser, X-rays, EUV light, etc., but also exposure using particle beams such as electron beams and ion beams.

[0018] In this specification, the content ratio of each repeating unit is a molar ratio unless otherwise specified.

[0019] In this specification, unless otherwise specified, the refractive index is a value measured by an ellipsometer at a wavelength of 550 nm.

[0020] In this specification, unless otherwise specified, when a molecular weight distribution exists, the molecular weight is the weight average molecular weight (Mw). In this specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) are values ​​determined by gel permeation chromatography (GPC) in terms of polystyrene.

[0021] In this specification, unless otherwise specified, the layer thickness (film thickness) is the average thickness measured using a scanning electron microscope (SEM) for thicknesses of 0.5 μm or more, and the average thickness measured using a transmission electron microscope (TEM) for thicknesses of less than 0.5 μm. The average thickness is obtained by cutting a sample to be measured using an ultramicrotome, measuring the thickness at any five points, and calculating the arithmetic average of the thicknesses.

[0022] [Transfer Film] The transfer film of the present invention is a transfer film comprising a temporary support and a composition layer, wherein the composition layer comprises an organopolysiloxane, wherein the organopolysiloxane comprises units represented by formula (1) and units represented by formula (2), and the content of the units represented by formula (2) is 20 to 80 mol % relative to all units of the organopolysiloxane. Hereinafter, an organopolysiloxane comprising units represented by formula (1) and units represented by formula (2), and wherein the content of the units represented by formula (2) is 20 to 80 mol % relative to all units of the organopolysiloxane, is also referred to as a "specific compound."

[0023] Although the detailed mechanism of action of the transfer film of the present invention is unclear, the inventors speculate as follows. One of the characteristics of the composition layer in the transfer film is that it contains a specific compound. It is speculated that the units represented by formula (1) in the specific compound cause interactions between groups containing mesogenic groups in formula (1), thereby reducing the linear expansion coefficient of the resulting film (freestanding film in the examples). Furthermore, the specific compound containing a predetermined amount of units represented by formula (2) reduces the linear expansion coefficient of the resulting film and reduces the likelihood of cracks occurring in the composition layer. In other words, the desired effects of the present invention can be achieved by using a specific compound containing units represented by formula (1) and a predetermined amount of units represented by formula (2). Note that a low linear expansion coefficient means a linear expansion coefficient as low as that of a copper plate when the substrate to which the composition layer in the transfer film is transferred is a copper plate (copper wiring). Hereinafter, a superior effect of at least one of the effects of reducing the linear expansion coefficient of the resulting film and the effect of reducing the likelihood of cracks occurring in the composition layer is also referred to as a "superior effect of the present invention."

[0024] Fig. 1 is a cross-sectional schematic diagram showing an example of an embodiment of a transfer film. The transfer film 100 shown in Fig. 1 has a configuration in which a temporary support 12, a composition layer 14, and a cover film 16 are laminated in this order. Although the transfer film 100 shown in Fig. 1 has the cover film 16, the transfer film 100 may have a configuration without the cover film 16. Furthermore, as described below, the transfer film may further have an intermediate layer and / or a thermoplastic resin layer.

[0025] Various components that may be included in the transfer film of the present invention will be described in detail below.

[0026] <Temporary Support> The transfer film includes a temporary support. The temporary support is a member that supports the composition layer and is ultimately removed by a peeling treatment.

[0027] The temporary support may have either a single-layer structure or a multi-layer structure. The temporary support is preferably a film, more preferably a resin film. The temporary support is also preferably a film that is flexible and does not significantly deform, shrink, or stretch under pressure, or under pressure and heat. Examples of the film include polyethylene terephthalate films (e.g., biaxially oriented polyethylene terephthalate films), polymethyl methacrylate films, cellulose triacetate films, polystyrene films, polyimide films, and polycarbonate films, with polyethylene terephthalate films being preferred. It is also preferable that the temporary support is free of deformations such as wrinkles and scratches.

[0028] When pattern exposure is performed through the temporary support, the temporary support preferably has high transparency. Specifically, the transmittance at wavelengths of 313 nm, 365 nm, 405 nm, and 436 nm is preferably 60% or more, more preferably 70% or more, even more preferably 80% or more, and particularly preferably 90% or more. The upper limit is preferably less than 100%. Preferred values ​​of the transmittance at each of the above wavelengths include, for example, 87%, 92%, and 98%. When a pattern is formed using a UV laser through the temporary support, the temporary support preferably has low transparency at the UV laser wavelength. Specifically, when a laser with a wavelength of 355 nm is used, the transmittance at a wavelength of 355 nm is preferably 80% or less, more preferably 60% or less, even more preferably 40% or less, and particularly preferably 20% or less. The lower limit is preferably 0% or more. In terms of pattern formability during pattern exposure through the temporary support, via formability during laser processing, and the transparency of the temporary support, the haze of the temporary support is preferably small. Specifically, the haze value of the temporary support is preferably 2% or less, more preferably 0.5% or less, and even more preferably 0.1% or less. The lower limit is preferably 0% or more. In terms of pattern formability during pattern exposure through the temporary support, via formability during laser processing, and transparency of the temporary support, it is preferable that the number of fine particles, foreign matter, and defects contained in the temporary support is small. Specifically, the number of fine particles, foreign matter, and defects with a diameter of 1 μm or more in the temporary support is 50 / mm２ Preferably, 10 pieces / mm or less ２ More preferably, 3 or less per mm ２ More preferably, 0 pieces / mm ２ As a specific example of the number of fine particles, foreign matter and defects having a diameter of 1 μm or more on the temporary support, 2 particles / mm ２ , and 0 pieces / mm ２ Examples include:

[0029] The thickness of the temporary support is preferably 5 to 200 μm, and from the viewpoint of ease of handling and versatility, more preferably 5 to 150 μm, still more preferably 5 to 50 μm, and particularly preferably 5 to 35 μm.

[0030] In order to improve the adhesion between the temporary support and the composition layer, the surface of the temporary support that comes into contact with the composition layer may be surface-modified by UV irradiation, corona discharge, plasma, etc. When the surface is modified by UV irradiation, the exposure dose of UV irradiation is 10 to 2000 mJ / cm. ２ is preferred, and 50 to 1000 mJ / cm ２ Examples of light sources for UV irradiation include low-pressure mercury lamps, high-pressure mercury lamps, ultra-high-pressure mercury lamps, carbon arc lamps, metal halide lamps, xenon lamps, chemical lamps, electrodeless discharge lamps, and light-emitting diodes that emit light in the wavelength range of 150 to 450 nm. The lamp output and illuminance can be adjusted as appropriate.

[0031] Examples of the temporary support include a biaxially oriented polyethylene terephthalate film having a thickness of 25 μm, a biaxially oriented polyethylene terephthalate film having a thickness of 16 μm, a biaxially oriented polyethylene terephthalate film having a thickness of 12 μm, and a biaxially oriented polyethylene terephthalate film having a thickness of 9 μm. The temporary support may be a recycled product. Examples of the recycled product include a film obtained by cleaning and chipping used films. Examples of commercially available recycled products include the Ecouse series (manufactured by Toray Industries, Inc.).

[0032] Examples of the temporary support include those described in paragraphs 0017 to 0018 of JP-A-2014-085643, paragraphs 0019 to 0026 of JP-A-2016-027363, paragraphs 0041 to 0057 of WO 2012 / 081680, and paragraphs 0029 to 0040 of WO 2018 / 179370, the contents of which are incorporated herein by reference.

[0033] The temporary support may have a layer containing fine particles (lubricant layer) on one or both sides of the temporary support in order to provide handleability. The diameter of the fine particles contained in the lubricant layer is preferably 0.05 to 0.8 μm. The thickness of the lubricant layer is preferably 0.05 to 1.0 μm. Commercially available temporary supports include Lumirror 16FB40, Lumirror 16KS40, Lumirror #38-U48, Lumirror #75-U34, Lumirror #25T60, and Cerapeel 25WZ (all manufactured by Toray Industries, Inc.); and Cosmoshine A4100, Cosmoshine A4160, Cosmoshine A4300, Cosmoshine A4360, and Cosmoshine A8300 (all manufactured by Toyobo Co., Ltd.).

[0034] <Composition Layer> The transfer film includes a composition layer. Preferably, the transfer film includes a composition layer disposed on a temporary support.

[0035] (Specific Compound) The composition layer contains a specific compound. The specific compound contains a unit represented by formula (1) and a unit represented by formula (2), and the content of the unit represented by formula (2) is 20 to 80 mol % relative to the total units (100 mol %) of the specific compound. The content of the unit represented by formula (2) is preferably 30 to 75 mol %, more preferably 35 to 70 mol %, and even more preferably 45 to 60 mol % relative to the total units (100 mol %) of the specific compound, and in terms of achieving better effects of the present invention, 45 to 60 mol % is even more preferable. The unit represented by formula (1) corresponds to a type of so-called T unit, and the unit represented by formula (2) corresponds to a type of so-called D unit.

[0036] The content of the unit represented by formula (1), the unit represented by formula (2), and other units (for example, T units and D units described later) is, for example, ２９The content of each of the above units can be measured by Si-NMR (nuclear magnetic resonance analysis). ２９ Measurement may be performed using Si-NMR. ２９ The content ratio of T units to D units can be calculated by calculating the ratio of the peak area appearing between -30 and 0 ppm in the Si-NMR spectrum (corresponding to the content of D units) to the peak area appearing between -80 and -30 ppm (corresponding to the content of T units). Similarly, the content ratio (molar ratio) of the units represented by formula (1) to the units represented by formula (2) can be calculated by calculating the ratio of the peak area appearing between -30 and 0 ppm that is attributed to the units represented by formula (2) to the peak area appearing between -80 and -30 ppm that is attributed to the units represented by formula (1).

[0037] Examples of the structure of the specific compound include an irregular form such as a random structure, a ladder structure, a cage (fully condensed cage) structure, and an incomplete cage structure (a partially cleaved cage structure in which some silicon atoms are missing from the cage structure and some silicon-oxygen bonds are cleaved in the cage structure), and a ladder structure is preferred.

[0038] The specific compound may have a polymerizable group. The type of the polymerizable group is not particularly limited, and examples thereof include radically polymerizable groups and cationically polymerizable groups. Examples of the radically polymerizable group include an acryloyloxy group, a methacryloyloxy group, a vinyl group, a styryl group, and an allyl group. Examples of the cationically polymerizable group include an oxiranyl group and an oxetanyl group. The number of polymerizable groups contained in the specific compound is not particularly limited, and may be one or more.

[0039] Formula (1) R ａ -SiO ３／２

[0040] In formula (1), R ａrepresents a group having a mesogen group. The group having a mesogen group is not particularly limited as long as it is a group having a mesogen group. A mesogen group is a group that represents the main skeleton of a liquid crystal molecule that contributes to liquid crystal formation. The liquid crystal molecule exhibits liquid crystallinity, which is an intermediate state (mesophase) between a crystalline state and an isotropic liquid state. For mesogen groups, reference can be made to, for example, "Flussige Kristalle in Tablellen II" (VEB Deutsche Verlag fur Grundstoff Industrie, Leipzig, published in 1984), particularly the description on pages 7 to 16, and "Liquid Crystal Handbook" edited by the Liquid Crystal Handbook Editorial Committee (Maruzen, published in 2000), particularly the description in Chapter 3. The mesogenic group contains one or more rings, and the ring is preferably at least one ring selected from the group consisting of aromatic rings (aromatic hydrocarbon rings and aromatic heterocyclic rings) and alicyclic rings (aliphatic heterocyclic rings and aliphatic hydrocarbon rings), and more preferably at least one ring selected from the group consisting of aromatic hydrocarbon rings and aromatic heterocyclic rings. The ring contained in the mesogenic group may have a substituent, which improves the degree of alignment of the liquid crystal cured layer. Examples of the substituent include -NR Ｎ - an aryl group, an alkyl group, an alkoxy group, an alkyl ester group or an acyl group (e.g., an acetyl group) is preferred. Ｎrepresents a hydrogen atom or an alkyl group. The aryl group is preferably a phenyl group or a naphthyl group. The ring contained in the mesogenic group may be either a monocyclic or polycyclic ring. That is, the aromatic ring and alicyclic ring may be either a monocyclic or polycyclic ring, with a monocyclic ring being preferred. The aromatic ring and alicyclic ring may also be a fused ring. The number of ring members in the aromatic hydrocarbon ring, heterocyclic ring, and alicyclic ring is preferably 5 to 12, and more preferably 5 or 6. The number of carbon atoms in the aromatic hydrocarbon ring is preferably 6 to 12, and more preferably 5 or 6. Examples of aromatic hydrocarbon rings include a benzene ring, a naphthalene ring, an anthracene ring, and a phenanthrene ring, with a benzene ring being preferred. The number of carbon atoms in the heterocyclic ring is preferably 3 to 12, and more preferably 3 to 6. Examples of aromatic heterocyclic rings include a furan ring, a pyrrole ring, a thiophene ring, a pyridine ring, a triazine ring, a phenanthroline ring, a thiazole ring, and a benzothiazole ring, with a thiophene ring, a triazine ring, or a thiazole ring being preferred. The number of carbon atoms in the alicyclic ring is preferably 6 to 12, more preferably 5 or 6. Examples of the alicyclic ring include cycloalkane rings such as a cyclopentane ring and a cyclohexane ring. In addition, the rings contained in the mesogenic group are preferably bonded to each other via a single bond or a divalent linking group, and more preferably bonded via a divalent linking group, since this provides a more excellent effect of the present invention due to the fact that the structure of the specific compound becomes planar. Examples of the divalent linking group include the L ｘ３ Examples of the divalent linking group include a divalent linking group having no ring, represented by the following formula:

[0041] The group having a mesogenic group also preferably has a heteroatom. Examples of the heteroatom include a nitrogen atom, an oxygen atom, and a sulfur atom, with a nitrogen atom or an oxygen atom being preferred. When the group having a mesogenic group has a heteroatom, it is preferable that the group having a mesogenic group at least one of having a heteroatom as a ring member atom constituting a ring contained in the mesogenic group and having a heteroatom as a group connecting the rings. Specifically, the group having a mesogenic group preferably has at least one group or ring selected from the group consisting of -COO-, -O-, -NH-, -N=N-, a triazine ring, a thiophene ring, and a thiazole ring. At least two rings selected from the above group may be fused to each other to form a fused ring. For example, a thiophene ring and a thiazole ring may be fused to form a thienothiazole ring.

[0042] The mesogenic group preferably has two or more (preferably 2 to 10) nitrogen atoms. The number of nitrogen atoms is not limited to the number of nitrogen atoms in the ring of the mesogenic group, but refers to the number of nitrogen atoms in the mesogenic group as a whole. Specifically, when the mesogenic group is a group having a "-benzene ring-N=N-triazine ring-", the number of nitrogen atoms is five, and therefore this corresponds to a preferred embodiment of the mesogenic group. Furthermore, the mesogenic group preferably has at least an aromatic heterocycle having a nitrogen atom as a ring member atom.

[0043] The group having a mesogenic group contains one or more rings, and the total number of monocyclic ring structures among the one or more rings is preferably two or more, more preferably three or more, and even more preferably four or more. The upper limit of the total number of the monocyclic ring structures is preferably 10 or less, more preferably six or less. In other words, it is preferable that the total number of monocyclic ring structures contained in the group having a mesogenic group satisfies the above-mentioned preferred embodiment. The monocyclic ring structure refers to a ring structure such as a monocyclic aromatic hydrocarbon ring, a monocyclic heterocyclic ring, or a monocyclic alicyclic ring that the mesogenic group may have. For example, in a ring obtained by condensing two monocyclic rings, the total number of monocyclic ring structures is two. Specifically, a thienothiazole ring is a ring obtained by condensing a thiophene ring and a thiazole ring, and the total number of monocyclic ring structures is two. Furthermore, for example, when the group having a mesogenic group contains two benzene rings and one thienothiazole ring, the total number of monocyclic ring structures is four.

[0044] The group having a mesogen group is preferably a group represented by formula (X) or a group represented by formula (Y).

[0045]

[0046] In formula (X), * represents a bonding position. ｘ１ represents a ring. ｘ２ represents a single bond, —COO—, —O—, or —CH ２ represents O-, -N=N-, -CH=CH-, -C≡C- or -CH=N-. ｘ３ represents a single bond or a divalent linking group having no ring. ｘ represents a hydrogen atom or a substituent not having a ring. nx represents an integer of 2 or more. In formula (Y), * represents a bonding position. Ar ｙ１ ~Ar ｙ４ each independently represents a monocycle. ｙ１ ~L ｙ３ each independently represents a single bond, —COO—, —O—, or —CH ２ represents O—, —NH—, —N═N—, —CH═CH—, —C≡C—, or —CH═N—. ｙ４ represents a single bond or a divalent linking group having no ring. ｙ１ and Rｙ２ each independently represents a hydrogen atom or a substituent not having a ring, my1 to my3 each independently represents an integer of 0 or more, and my1 + my2 + my3 represents an integer of 2 or more. ｘ１ If there are multiple L ｘ１ may be the same or different. ｘ２ If there are multiple L ｘ２ Ar may be the same or different. ｙ１ When there are multiple Ar ｙ１ Ar may be the same or different. ｙ２ When there are multiple Ar ｙ２ Ar may be the same or different. ｙ３ When there are multiple Ar ｙ３ They may be the same or different. ｙ１ If there are multiple L ｙ１ They may be the same or different. ｙ２ If there are multiple L ｙ２ They may be the same or different. ｙ３ If there are multiple L ｙ３ They may be the same or different.

[0047] L ｘ１ Examples of the ring represented by the formula (I) include one or more rings exemplified as the one or more rings contained in the mesogenic group described above, and a benzene ring, a triazine ring, or a thienothiazole ring is preferred. Ｘ１ The ring represented by the formula (I) constitutes a divalent group. ｘ２ is preferably a single bond, —COO— or —N═N—, and the effect of the present invention is more excellent because the structure of the specific compound becomes planar, and so on. ｘ L directly bonded to ｘ２ is a single bond, and other L ｘ２ It is also preferred that L is —COO— or —N═N—. ｘ３Examples of the divalent linking group having no ring represented by the formula (I) include alkylene groups, -O-, -CO-, -COO-, -S-, and combinations thereof, with -alkylene group-O-, -alkylene group-CO-, -alkylene group-COO-, -alkylene group-S-alkylene group-, and -alkylene group-S-alkylene group-O- being preferred. The alkylene group may be either linear or branched, with linear being preferred. The alkylene group preferably has 1 to 10 carbon atoms.

[0048] R ｘ Examples of the substituent not having a ring represented by the formula (I) include a group having a polymerizable group, an alkyl group, an alkoxy group, an alkyl ester group, and an acyl group (e.g., an acetyl group). The group having a polymerizable group is not particularly limited as long as it is a group having a polymerizable group that the specific compound described above can have. Preferred groups having a polymerizable group are polymerizable groups, -(alkylene group which may have -O-)-polymerizable groups, or -COO-alkylene group-polymerizable groups. The number of carbon atoms in the alkylene group is preferably 1 to 10, and more preferably 1 to 5. R ｘ is preferably a hydrogen atom or a -(alkylene group which may have -O-)-polymerizable group.

[0049] nx is an integer of 2 or more, preferably an integer of 3 or more, and more preferably an integer of 4 or more. The upper limit is preferably an integer of 10 or less, and more preferably an integer of 6 or less.

[0050] Ar ｙ１ ~Ar ｙ４ The monocyclic ring represented by the formula (I) may be a monocyclic ring selected from the rings exemplified as one or more rings contained in the group contained in the mesogenic group. ｙ１ ~Ar ｙ３ The ring represented by Ar ｙ４ The ring represented by L constitutes a trivalent group. ｙ１ ~L ｙ３ is preferably a single bond, -COO-, -NH- or -N=N-, and more preferably -COO-, -NH- or -N=N-, since the effect of the present invention is more excellent due to the fact that the structure of the specific compound becomes planar. ｙ４The divalent linking group having no ring represented by the formula ｘ３ The meaning and preferred embodiments are also the same as the divalent linking group having no ring represented by the formula: ｙ１ and R ｙ２ The substituent having no ring represented by the above R ｘ The meaning and preferred embodiments are also the same as those of the substituent having no ring represented by the following formula:

[0051] In addition, the above L ｘ１ and Ar ｙ１ ~Ar ｙ４ As described above, the monocyclic ring represented by may have a substituent. The substituent is preferably an alkyl group, an alkoxy group, an alkyl ester group (an alkyloxycarbonyl group or an alkylcarbonyloxy group), an acyl group (for example, an acetyl group), or a group having a polymerizable group. Details of the group having a polymerizable group are given in R ａ The monovalent group represented by the formula (I) is as described above.

[0052] my1 to my3 are each independently an integer of 0 or greater, preferably an integer of 1 or greater. The upper limit is preferably an integer of 10 or less, more preferably an integer of 6 or less, and even more preferably an integer of 3 or less. Furthermore, my1 + my2 + my3 (the total of my1 to my3) is an integer of 2 or greater, preferably an integer of 2 to 10, more preferably an integer of 2 to 7, and even more preferably an integer of 3 to 5.

[0053] The units represented by formula (1) may be used alone or in combination of two or more. The content of the units represented by formula (1) is preferably 20 to 80 mol%, more preferably 25 to 70 mol%, even more preferably 30 to 65 mol%, and particularly preferably 40 to 55 mol%, relative to the total amount of units represented by formula (T) (so-called T units) in the specific compound. The content of the units represented by formula (1) is preferably 50 mol% or more, more preferably 80 mol% or more, and even more preferably 95 mol% or more, relative to the total amount of units represented by formula (T) (so-called T units) in the specific compound. The upper limit is preferably 100 mol% or less.

[0054] The specific compound may have a T unit different from the unit represented by formula (1). When the specific compound has a polymerizable group, it is also preferable that the T unit different from the unit represented by formula (1) has a polymerizable group.

[0055] Formula (T) R ｔ -SiO ３／２ In formula (T), R ｔ represents a substituent.

[0056] Formula (2) R ｂ ２ -SiO ２／２

[0057] In formula (2), R ｂ each independently represents a hydrocarbon group or a group having a mesogenic group.

[0058] R ｂ The group having a mesogen group represented by R ａ The meaning and preferred embodiments are also the same as those of the group having a mesogen group represented by the following formula:

[0059] R ｂ The hydrocarbon group represented by may be a monocyclic aromatic hydrocarbon ring group, a monocyclic alicyclic group, or a linear or branched aliphatic hydrocarbon group. The number of ring members in the aromatic hydrocarbon ring group is preferably 5 to 12, more preferably 5 or 6. The number of carbon atoms in the aromatic hydrocarbon ring group is preferably 6 to 12, more preferably 6. As the aromatic hydrocarbon ring group, a benzene ring group (phenyl group) is preferred. As the aliphatic hydrocarbon group, a linear one is preferred. The number of carbon atoms in the aliphatic hydrocarbon group is preferably 1 to 20, more preferably 1 to 5, and even more preferably 1 to 3. Examples of the aliphatic hydrocarbon group include alkyl groups (e.g., methyl and ethyl groups), alkenyl groups (e.g., vinyl groups), alkynyl groups, and groups formed by combining these groups, with alkyl groups or alkenyl groups being preferred. R ｂ is preferably a group having a hydrogen atom, an alkyl group, an alkenyl group or a mesogenic group, and more preferably a hydrogen atom, a methyl group, a vinyl group or a phenyl group. ｂ At least one of R preferably represents a linear or branched aliphatic hydrocarbon group, andｂ It is more preferable that at least one of R represents an alkyl group, and ｂ More preferably, all of represent an alkyl group.

[0060] The unit represented by formula (2) may be used alone or in combination of two or more. The content of the unit represented by formula (2) is preferably 50 mol% or more, more preferably 80 mol% or more, and even more preferably 95 mol% or more, based on the total amount of the unit represented by formula (D) (so-called D unit) in the specific compound. The upper limit is preferably 100 mol% or less.

[0061] Formula (D) R ｄ ２ -SiO ２／２ In formula (D), R ｄ each independently represents a substituent.

[0062] The total content of the units represented by formula (1) and the units represented by formula (2) is preferably 90 mol % or more, more preferably 95 mol % or more, based on the total units of the specific compound. The upper limit is preferably 100 mol % or less.

[0063] The weight average molecular weight of the specific compound is preferably 3,000 to 1,000,000, more preferably 5,000 to 500,000, and even more preferably 5,000 to 50,000.

[0064] The method for producing the specific compound is not particularly limited, and the specific compound can be produced, for example, by hydrolytic condensation of raw materials including a monomer that will become a unit represented by formula (1) upon hydrolytic condensation and a monomer that will become a unit represented by formula (2) upon hydrolytic condensation. Furthermore, as described above, the specific compound preferably has a ladder structure. A method for producing a specific compound with a ladder structure includes, for example, a method in which, when a monomer that will become a unit represented by formula (1) and a monomer that will become a unit represented by formula (2) are hydrolytically condensed, the reaction is carried out while discharging by-products such as alcohol (e.g., methanol) generated in the system to the outside of the system. Specifically, during the hydrolytic condensation of each of the above monomers, the reaction is carried out while removing refluxed methanol to the outside of the system using a Dean-Stark apparatus.

[0065] The specific compound may be used alone or in combination of two or more. The content of the specific compound is preferably 50% by mass or more, more preferably 80% by mass or more, still more preferably 95% by mass or more, and particularly preferably 98% by mass or more, based on the total mass of the composition layer. The upper limit is preferably 100% by mass or less.

[0066] (Polymerization initiator) The composition layer may contain a polymerization initiator. Examples of the polymerization initiator include a thermal polymerization initiator such as a peroxide, a photoradical polymerization initiator, a photocationic polymerization initiator, and a photoanionic polymerization initiator.

[0067] Examples of peroxides include ketone peroxides, peroxyketals, hydroperoxides, dialkyl peroxides, and peroxyesters. Specific examples include acetyl peroxide, dicumyl peroxide, tert-butyl peroxide, t-butylcumyl peroxide, propionyl peroxide, benzoyl peroxide (BPO), 2-chlorobenzoyl peroxide, 3-chlorobenzoyl peroxide, 4-chlorobenzoyl peroxide, 2,4-dichlorobenzoyl peroxide, 4-bromomethylbenzoyl peroxide, lauroyl peroxide, potassium persulfate, diisopropyl peroxycarbonate, tetralin hydroperoxide, 1-phenyl-2-methylpropyl-1-hydroperoxide, tert-butyl triphenylperacetate, tert-butyl hydroperoxide, tert-butyl performate, tert-butyl peracetate, tert-butyl perbenzoate, tert-butyl perphenylacetate, tert-butyl per-4-methoxyacetate, and tert-butyl per-N-(3-toluyl)carbamate.

[0068] Examples of photopolymerization initiators include oxime ester compounds (photopolymerization initiators having an oxime ester structure), aminoacetophenone compounds (photopolymerization initiators having an aminoacetophenone structure), hydroxyacetophenone compounds (photopolymerization initiators having a hydroxyacetophenone structure), acylphosphine oxide compounds (photopolymerization initiators having an acylphosphine oxide structure), and bistriphenylimidazole compounds (photopolymerization initiators having a bistriphenylimidazole structure). Preferred photopolymerization initiators are oxime ester compounds or aminoacetophenone compounds. Examples of photopolymerization initiators include the photopolymerization initiators described in paragraphs 0031 to 0042 of JP 2011-095716 A and paragraphs 0064 to 0081 of JP 2015-014783 A.

[0069] The polymerization initiator may be used alone or in combination of two or more. The content of the polymerization initiator is preferably 10.0% by mass or less, more preferably 5.0% by mass or less, and even more preferably 2.0% by mass or less, based on the total mass of the composition layer. The lower limit is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, based on the total mass of the composition layer.

[0070] (Additives) The composition layer may contain additives other than the specific compound. Examples of additives include heterocyclic compounds (e.g., triazole, benzotriazole, and tetrazole, as well as derivatives thereof, rust inhibitors), surfactants, fillers, aliphatic thiol compounds, polymerization inhibitors, hydrogen donor compounds, impurities, plasticizers, sensitizers, polymerizable compounds, and thermally crosslinkable compounds. Examples of heterocyclic compounds, aliphatic thiol compounds, polymerization inhibitors, and hydrogen donor compounds include the various components described in WO 2022 / 039027. Examples of plasticizers and sensitizers include the various components described in paragraphs 0097 to 0119 of WO 2018 / 179640.

[0071] Examples of fillers include organic fillers and inorganic fillers. Examples of fillers include silica; silicates such as kaolinite, kaolin clay, calcined clay, talc, and glass fillers such as undoped glass; alumina, barium sulfate, mica powder, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum borate, barium titanate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, barium zirconate, calcium zirconate, zirconium phosphate, cordierite, zirconium tungstate, and manganese nitride. The composition layer preferably does not contain a filler. Even if the composition layer does not contain a filler, the linear expansion coefficient can be reduced by containing a specific compound. Furthermore, when the composition layer does not contain a filler, the surface roughness of the composition layer is easily reduced, copper adhesion is easily improved, and the pattern shape is easily improved.

[0072] In the X-ray diffraction spectrum of the composition layer obtained by the X-ray diffraction method, it is preferable that a diffraction peak showing a maximum value is observed in the range of a diffraction angle 2θ of 18° or more, and more preferably a diffraction peak showing a maximum value is observed in the range of a diffraction angle 2θ of 20° or more. The upper limit of the diffraction angle 2θ is preferably 40° or less, more preferably 25° or less. When the diffraction angle 2θ at which a diffraction peak showing a maximum value is observed is within the above-mentioned preferred range, the intermolecular distance between specific compounds in the composition layer is shorter than that outside the above-mentioned range, and the linear expansion coefficient is likely to be smaller. Method A: A laminate having a composition layer is obtained on a substrate using the above-mentioned transfer film, and the composition layer in the laminate is heat-treated at 200°C for 1.5 hours, then immersed in 2M hydrochloric acid for 8 hours, rinsed with water, and peeled off from the substrate of the laminate to obtain a film. Examples of methods for obtaining the above-mentioned laminate using a transfer film include the method in step Z1 described below. Method A is preferably used when the composition layer does not contain a specific compound having a polymerizable group, or when it contains a specific compound having a polymerizable group and a thermal polymerization initiator.

[0073] The composition layer may have a diffraction angle 2θ in an X-ray diffraction spectrum by an X-ray diffraction method of a film obtained by Method B, which is in the preferred embodiment described above. Method B: A laminate having a composition layer on a substrate is obtained by using the above-described transfer film, and the composition layer in the laminate is irradiated with a high-pressure mercury lamp at an integrated illuminance of 100 mJ / cm. ２ The composition layer is exposed to light at 200°C for 1.5 hours, and then the exposed composition layer is immersed in 2M hydrochloric acid for 8 hours, rinsed with water, and peeled off from the substrate in the laminate to obtain a film. Examples of a method for obtaining the laminate using a transfer film include the method in step Z1 described below. Note that method B is preferably used when the composition layer contains a specific compound having a polymerizable group and a photopolymerization initiator.

[0074] An example of the measurement conditions for the X-ray diffraction method is shown below: Apparatus used: X-ray diffraction apparatus SmartLab (manufactured by Rigaku Corporation) X-ray type: CuKα (45 kV, 200 mA) Incident angle: 0.18°

[0075] The average thickness of the composition layer is preferably from 0.5 to 100 μm, more preferably from 1 to 70 μm, and even more preferably from 10 to 50 μm.

[0076] <Intermediate layer and thermoplastic resin layer> The transfer film may have an intermediate layer or a thermoplastic resin layer. Examples of the intermediate layer and the thermoplastic resin layer include the intermediate layer and the thermoplastic resin layer described in paragraphs 0164 to 0204 of WO 2021 / 166719, the contents of which are incorporated herein by reference.

[0077] <Cover Film> The transfer film may contain a cover film. When the transfer film contains a cover film, the cover film is preferably provided as the outermost layer on the side opposite to the temporary support. The number of fisheyes having a diameter of 80 μm or more contained in the cover film is 5 / m. ２ Preferably, 0 pieces / m ２The fisheyes are foreign matter, undissolved matter, and / or oxidized and deteriorated matter of the material that is trapped in the cover film when the cover film is produced by thermally melting the material and then kneading, extrusion and / or biaxial stretching and casting.

[0078] The number of particles with a diameter of 3 μm or more contained in the cover film is 30 / mm ２ Preferably, 10 pieces / mm or less ２ More preferably, 5 or less pieces / mm ２ More preferably, 0 pieces / mm ２ This makes it possible to suppress defects caused by the transfer of irregularities caused by particles contained in the cover film to the composition layer.

[0079] The arithmetic mean roughness Ra of the surface of the cover film is preferably 0.01 μm or more, more preferably 0.02 μm or more, and even more preferably 0.03 μm or more.If Ra is within the above range, for example, when the transfer film is long, the winding property of the transfer film is excellent.In addition, from the viewpoint of suppressing defects during transfer, the upper limit is preferably less than 0.50 μm, more preferably 0.40 μm or less, and even more preferably 0.30 μm or less.

[0080] Examples of the cover film include polyethylene terephthalate film, polypropylene film, polystyrene film, and polycarbonate film. Examples of the cover film include the cover films described in paragraphs 0083 to 0087 and 0093 of JP 2006-259138 A, the contents of which are incorporated herein by reference.

[0081] Examples of cover films include Alphan (registered trademark) FG-201 (manufactured by Oji F-Tex Co., Ltd.), Alphan (registered trademark) E-201F (manufactured by Oji F-Tex Co., Ltd.), Therapeel (registered trademark) 25WZ (manufactured by Toray Advanced Film Co., Ltd.), and Lumirror (registered trademark) 16QS62 (16KS40) (manufactured by Toray Industries, Inc.). The cover film may be a recycled product. Examples of recycled products include those obtained by cleaning and chipping used films and then forming the resulting material into films. Examples of commercially available recycled products include the Ecouse series (manufactured by Toray Industries, Inc.).

[0082] <Other Layers> The transfer film may include other layers in addition to the above layers. Examples of the other layers include a high refractive index layer. Examples of the high refractive index layer include the high refractive index layers described in paragraphs 0168 to 0188 of WO 2021 / 187549, the contents of which are incorporated herein by reference.

[0083] [Method for producing transfer film] The method for producing the transfer film may be a known method. The method for producing the transfer film preferably includes a step of applying a composition containing a specific compound onto a temporary support to form a composition layer.

[0084] For example, a method for manufacturing the transfer film 100 shown in FIG. 1 includes a manufacturing method including a step of applying a composition containing a specific compound to the surface of a temporary support 12 to form a coating film, and then drying the coating film to form a composition layer 14. The transfer film 100 shown in FIG. 1 is manufactured by pressing a cover film 16 onto the composition layer of the transfer film manufactured by the above manufacturing method. The transfer film 100 shown in FIG. 1 may also be wound up after manufacturing and stored as a roll-form transfer film 100. The roll-form transfer film 100 can be used as is in the lamination step with a substrate in a roll-to-roll system.

[0085] The method for forming the composition layer may be a known method. Examples of the coating method for coating the composition on the temporary support include slit coating, spin coating, curtain coating, and inkjet coating. The method for drying the coating film may be a known method, examples of which include reduced pressure drying, heat drying, and natural drying.

[0086] The various components that the composition may contain are described in detail below.

[0087] The composition contains a specific compound. The specific compound has the same meaning as the specific compound in the transfer film described above, and preferred embodiments are also the same. The specific compound may be used alone or in combination of two or more. The content of the specific compound is preferably 50% by mass or more, more preferably 80% by mass or more, still more preferably 95% by mass or more, and particularly preferably 98% by mass or more, based on the total solid content of the composition. The upper limit is preferably 100% by mass or less.

[0088] The composition may contain a solvent. The solvent is not particularly limited as long as it can dissolve or disperse various components that may be contained in the composition other than the solvent. Examples of the solvent include water, alkylene glycol ether solvents, alkylene glycol ether acetate solvents, alcohol solvents (e.g., methanol, ethanol, etc.), ketone solvents (e.g., acetone, methyl ethyl ketone, etc.), aromatic hydrocarbon solvents (e.g., toluene, etc.), aprotic polar solvents (e.g., dimethyl sulfoxide, sulfolane, etc.), amide solvents, cyclic ether solvents (e.g., tetrahydrofuran, etc.), ester solvents (e.g., n-propyl acetate, etc.), amide solvents (e.g., N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, N-ethylpyrrolidone, etc.), lactone solvents, urea solvents, and mixed solvents containing two or more of these.

[0089] The composition may contain other components in addition to the various components described above. Examples of other components include components other than the specific compounds that may be contained in the composition layer described above.

[0090] The water content of the composition is preferably less than 2.0% by mass, more preferably less than 1.5% by mass, and even more preferably less than 1.0% by mass. If it is less than 2.0%, the storage stability of the composition is improved. The lower limit of the water content of the composition is preferably 0.001% by mass or more, and can be 0.05% by mass or more, or can be 0.5% by mass or more, from the viewpoints of reducing the effort required for managing storage conditions, adhesion, developability, etc. Specific examples of the water content of the composition include 0.05% by mass, 0.2% by mass, and 1.4% by mass. The water content of the composition may fluctuate during storage. Methods for maintaining the water content of the composition during storage include adjusting the humidity under storage conditions and reducing the porosity of the container during storage.

[0091] The metal content of the composition is set to 5 ppm by mass (parts per million (10 ppm)) based on the total mass of the composition from the viewpoints of insulation properties and reliability. －６ ) is preferably less than 1 ppm by mass, more preferably less than 0.5 ppm by mass. Furthermore, from the viewpoints of reducing the effort required for reducing the metal content and improving mechanical properties and adhesion, the lower limit of the metal content in the composition is preferably 0.001 ppm by mass or more, and can also be 0.01 ppm by mass or more, relative to the total mass of the composition. Examples of metals include sodium, potassium, magnesium, calcium, iron, copper, chromium, nickel, manganese, aluminum, titanium, cobalt, zinc, and tin, but do not include metals contained as complexes of organic compounds and metals. When the composition contains multiple metals, the total amount of these metals is preferably within the above range. Specific examples of the metal content include 0.002 ppm by mass, 0.05 ppm by mass, and 0.3 ppm by mass, relative to the total mass of the composition.

[0092] Examples of methods for reducing metals (metal impurities) unintentionally contained in a composition include selecting raw materials with a low metal content as raw materials constituting the composition, filtering the raw materials constituting the composition, and lining the inside of an apparatus with polytetrafluoroethylene or the like to perform distillation under conditions that minimize contamination.

[0093] The content of halogen atoms is preferably less than 500 ppm by mass, more preferably less than 300 ppm by mass, and even more preferably less than 200 ppm by mass, relative to the total mass of the composition. In particular, the content of halogen atoms present in the form of halogen ions is preferably less than 5 ppm by mass, more preferably less than 1 ppm by mass, and even more preferably less than 0.5 ppm by mass, relative to the total mass of the composition. From the viewpoint of reducing the effort required for reducing halogen ions, the lower limit of halogen ions in the composition can be 0.01 ppm by mass or more, or even 0.1 ppm by mass or more, relative to the total mass of the composition. Specific examples of the amount of halogen ions include 0.02 ppm by mass, 0.5 ppm by mass, and 2.5 ppm by mass, relative to the total mass of the composition. Examples of halogen atoms include fluorine atoms, chlorine atoms, bromine atoms, and iodine atoms. It is preferable that the total of chlorine atoms and bromine atoms, or the total of chlorine ions and bromine ions, is within the above-mentioned range. Preferred methods for adjusting the content of halogen atoms include ion exchange treatment.

[0094] The composition may contain a monomer component. The monomer component is typically a raw material for organopolysiloxane. The monomer component is preferably one that becomes a unit represented by formula (1) or a unit represented by formula (2) upon hydrolysis and condensation. Examples of the monomer component include a compound having a trialkoxysilyl group, a compound having a structure in which the trialkoxysilyl group is partially hydrolyzed, and a compound having a trihydroxysilyl group. From the viewpoint of reducing the linear expansion coefficient, the content of the monomer component is preferably less than 10% by mass, more preferably less than 5% by mass, and even more preferably less than 3% by mass, relative to the total mass of the composition. Furthermore, from the viewpoint of suppressing cracking, the content of the monomer component is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and even more preferably 0.1% by mass or more, relative to the total mass of the composition.

[0095] [Uses] Films obtained from the composition layer formed using the transfer film of the present invention can be used in a variety of applications. For example, they can be used as electrode protective films, insulating films, planarizing films, overcoat films, hard coat films, passivation films, partition walls, spacers, microlenses, optical filters, anti-reflection films, etching resists, and plating members. Specific examples include protective films or insulating films for touch panel electrodes, protective films or insulating films for printed wiring boards, protective films or insulating films for TFT substrates, interlayer insulating films in build-up substrates for semiconductor packages, organic interposers, color filters, overcoat films for color filters, and etching resists for wiring formation.

[0096] [Method for Manufacturing a Semiconductor Package] The method for manufacturing a semiconductor package is not particularly limited as long as it uses the transfer film of the present invention. Examples of methods for manufacturing a semiconductor package include known manufacturing methods such as manufacturing methods for build-up substrates. A first preferred embodiment of the method for manufacturing a semiconductor package is a manufacturing method including the following steps Z1 and Z2, and more preferred is a manufacturing method including steps Z1 to Z4. Step Z1: forming a composition layer on a substrate using a transfer film; Step Z2: forming a pattern having vias in the composition layer; Step Z3: heating or exposing the pattern; and Step Z4: forming a circuit pattern on the obtained pattern. Furthermore, a first preferred embodiment of the method for manufacturing a semiconductor package is a manufacturing method including steps Z1 to Z4, which further includes step Z5 of forming a composition layer on the semiconductor package manufactured by step Z4 using a transfer film, and preferably repeats steps Z2 to Z5.

[0097] <Step Z1> Step Z1 is a step of forming a composition layer on a substrate using a transfer film. Step Z1 is preferably a step of bringing the surface of the composition layer in the transfer film opposite the temporary support side into contact with the substrate, thereby laminating the transfer film and the substrate. Examples of methods for laminating the transfer film include known transfer methods and methods using known laminators such as laminators, vacuum laminators, and auto-cut laminators, and methods involving pressure and heat application using rolls or the like are preferred. The lamination temperature is preferably 70 to 130°C. Furthermore, when the transfer film has a cover film, step Z1 is preferably performed after peeling the cover film from the transfer film.

[0098] (Substrate) Examples of the substrate include a glass substrate, a glass epoxy substrate, a silicon substrate, a resin substrate, and a substrate having a conductive layer, with a substrate having a conductive layer being preferred. The substrate may be composed of a light-transmitting substrate such as a glass substrate, or may be tempered glass such as Corning Gorilla Glass. Examples of materials contained in the substrate include materials described in JP 2010-086684 A, JP 2010-152809 A, and JP 2010-257492 A. Resin substrates are preferably resin films with low optical distortion and / or high transparency. Specific examples include polyester, polyethylene terephthalate (PET), polyethylene naphthalate, polycarbonate, triacetyl cellulose, cycloolefin polymer, and polyimide.

[0099] The substrate having a conductive layer is preferably a resin substrate having a conductive layer, and more preferably a resin film having a conductive layer, because it can be produced by a roll-to-roll process. The substrate having a conductive layer may also be a laminate obtained by the above-mentioned method for producing a semiconductor package.

[0100] Examples of the conductive layer include known conductive layers used for circuit wiring or touch panel wiring. From the viewpoints of conductivity and fine line formability, the conductive layer is preferably one or more layers selected from the group consisting of a metal layer (e.g., metal foil, etc.), a conductive metal oxide layer, a graphene layer, a carbon nanotube layer, and a conductive polymer layer, more preferably a metal layer, and even more preferably a copper layer or a silver layer. The conductive layer may also be one or more layers. The conductive layer may be used alone or in combination of two or more types. Examples of materials for the conductive layer include simple metals and conductive metal oxides. Examples of simple metals include Al, Zn, Cu, Fe, Ni, Cr, Mo, Ag, and Au. Examples of conductive metal oxides include ITO (indium tin oxide), IZO (indium zinc oxide), and SiO ２ The conductivity is such that the volume resistivity is 1×10 ６ It means that the volume resistivity is less than 1×10 ４ It is preferably less than Ωcm.

[0101] The conductive layer may be patterned. Examples of methods for producing a patterned conductive layer include subtractive methods such as etching and additive methods. Examples of the etching method include the wet etching method described in paragraphs 0048 to 0054 of JP 2010-152155 A and known dry etching methods such as plasma etching. The etching method may also be a method using an etching resist.

[0102] <Step Z2> Step Z2 is a step of forming a pattern having vias in the composition layer. The pattern having vias may be formed only in the composition layer, or may be formed in both the composition layer and the substrate. Methods for forming a pattern having vias include, for example, methods using a drill, a laser, and plasma. As a method for forming a pattern using a laser, the method of step Z13 described below can be used.

[0103] Furthermore, when the composition layer is photosensitive, the method for forming a pattern having vias preferably includes a step of pattern-exposing the composition layer, a step of developing the exposed composition layer with a developer to form a pattern, and a step of etching the conductive layer in areas where the pattern is not arranged. It is more preferable to include a step of curing the pattern between the step of forming the pattern and the step of etching. The exposure may be performed from the side opposite the substrate of the composition layer, or from the substrate side of the composition layer.

[0104] Examples of the developer include an alkaline developer and an organic solvent developer. Examples of the development method include puddle development, shower development, spin development, and dip development, and a development method in which the developer is sprayed onto the composition layer after exposure by showering is preferred. After development, development residues may be removed by spraying a detergent or the like by showering and rubbing with a brush or the like. The temperature of the developer is preferably 20 to 40°C.

[0105] The light source used for exposure may be any light source that irradiates light in a wavelength range (e.g., light in a wavelength range of 254 nm, 313 nm, 365 nm, 405 nm, etc.) to which various photosensitive components in the composition layer (e.g., a specific compound, a polymerizable compound, a polymerization initiator, etc.) are sensitive. Specific examples include ultra-high pressure mercury lamps, high pressure mercury lamps, metal halide lamps, and LEDs (light-emitting diodes).

[0106] The exposure dose is 5 to 200 mJ / cm ２ is preferred, and 10 to 200 mJ / cm ２ is more preferred.

[0107] In step Z2, exposure may be performed after peeling off the temporary support, or exposure may be performed through the temporary support before peeling off the temporary support, and then the temporary support may be peeled off. Patternwise exposure is preferably performed without peeling off the temporary support in order to prevent mask contamination due to contact between the composition layer and the mask and to avoid the influence of foreign matter attached to the mask on the exposure. The patternwise exposure may be exposure through a mask or direct exposure using a laser or the like. Examples of masks include quartz masks, soda-lime glass masks, and film masks. Quartz masks are preferred because of their excellent dimensional accuracy, and film masks are preferred because they can be easily made into large sizes. As a material for the film mask, polyester film is preferred, and polyethylene terephthalate film is more preferred. As a material for the film mask, for example, XPR-7S SG (manufactured by Fujifilm Global Graphic Systems Co., Ltd.) is exemplified.

[0108] The pattern having vias may be either through holes or via holes. The shape of the vias in the pattern may be, for example, a square, trapezoid, or inverted trapezoid in cross section; or a circle or square in front view (the shape of the via when observed from the direction in which the via bottom is visible). An inverted trapezoid is preferred as the cross section because it improves the adhesion of plated copper to the via wall surface. The via size (diameter) is preferably 300 μm or less, more preferably 100 μm or less, even more preferably 50 μm or less, and particularly preferably 5 μm or less. The lower limit is preferably 1 μm or more. The number of vias may be 1 or 2 or more, and preferably 2 or more.

[0109] <Step Z3> Step Z3 is a step of heating or exposing the composition layer. Step Z3 is preferably a step of curing the composition layer. The heating temperature is preferably 100 to 300°C, and the heating time is preferably 10 minutes to 10 hours. Examples of the exposure method include the exposure method in step Z2.

[0110] <Step Z4> Step Z4 is a step of forming a circuit pattern on the pattern. The material of the circuit pattern is not particularly limited, and is preferably a single metal or alloy containing one or more metals selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin, and indium. Among these, single metals such as chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper, or nickel-chromium alloys are preferred, with single metal copper being more preferred. As a method for forming the circuit pattern, a semi-additive process is preferred because it allows for the formation of fine wiring.

[0111] For example, in a semi-additive process, a seed layer is first formed by electroless copper plating using a palladium catalyst or the like on the via bottoms, via walls, and the entire surface of a via-containing pattern. The seed layer serves to form a power supply layer for electrolytic copper plating, and the seed layer thickness is preferably 0.1 to 2.0 μm. A seed layer thickness of 0.1 μm or greater tends to suppress a decrease in connection reliability during electrolytic copper plating. A seed layer thickness of 2.0 μm or less tends to eliminate the need for a large etching amount when flash etching the seed layer between wirings, thereby tending to suppress damage to wiring during etching. Electroless copper plating is performed by depositing metallic copper on the surface of a via-containing pattern through a reaction between copper ions and a reducing agent. Examples of electroless plating methods and electrolytic plating methods include known plating methods. A palladium-tin mixed catalyst is preferred as the catalyst for electroless plating. The average primary particle size of the mixed catalyst is preferably 10 nm or less. Furthermore, the plating solution for electroless plating preferably contains hypophosphorous acid (reducing agent). Examples of electroless copper plating solutions include "MSK-DK" manufactured by Atotech Japan and "ThruCup (registered trademark) PEA ver. 4" series manufactured by Uemura Kogyo Co., Ltd.

[0112] A second preferred embodiment of the method for manufacturing a semiconductor package includes the following steps Z11 to Z13. A preferred embodiment of the method includes the following steps Z11 to Z13 and further includes the following step Z14 either before step Z12, between steps Z12 and Z13 (after step Z12 or before step Z13), or after step Z13. That is, the second preferred embodiment of the method for manufacturing a semiconductor package includes a method including steps Z11, Z14, Z12, and Z13 in this order (hereinafter referred to as "Aspect 2-1"); a method including steps Z11, Z12, Z13, and Z14 in this order (hereinafter referred to as "Aspect 2-2"); and a method including steps Z11, Z12, Z14, and Z13 in this order (hereinafter referred to as "Aspect 2-3"). The method of Aspect 2-2 is preferred because it produces a more excellent via shape. The second preferred embodiment of the method for manufacturing a semiconductor package also preferably includes the following step Z15. In the case of Aspect 2-1 or Aspect 2-3, Step Z15 is preferably performed after Step Z13, and in the case of Aspect 2-2, Step Z15 is preferably performed after Step Z14. Step Z11: forming a composition layer on a substrate using a transfer film Step Z12: heating or exposing the composition layer Step Z13: forming a pattern having vias on the heated or exposed composition layer using a laser Step Z14: removing the temporary support Step Z15: forming a circuit pattern on the obtained pattern A second preferred embodiment of the method for producing a semiconductor package is a production method including Steps Z11 to Z15, and further including Step Z16 of forming a composition layer on the obtained semiconductor package using a transfer film, and it is preferable that Steps Z12 to Z16 are repeatedly performed.

[0113] <Step Z11> Step Z11 is a step of forming a composition layer on a substrate using a transfer film. As the method for Step Z11, the method for Step Z1 described above can be used.

[0114] <Step Z12> Step Z12 is a step of heating or exposing the composition layer obtained in Step Z11. Step Z12 is preferably a step of curing the composition layer. The heating and exposing methods can be the same as those used in Step Z3.

[0115] <Step Z13> Step Z13 is a step of forming a pattern having vias using a laser in the heated or exposed composition layer obtained in step Z12. Step Z13 may be performed before or after step Z14, which will be described later. That is, the pattern formation using a laser may be performed via a temporary support, or may be performed after removing the temporary support.

[0116] The shape of the via is not particularly limited, and examples thereof include a square, trapezoid, and inverted trapezoid cross-sectional shape; and a circle and a square front shape (the shape of the via when observed from the direction in which the via bottom is visible). An inverted trapezoid cross-sectional shape is preferred because it improves the adhesion of plated copper to the via wall surface.

[0117] The vias may be either through holes or via holes. The via size (diameter) is preferably 300 μm or less, more preferably 100 μm or less, even more preferably 50 μm or less, and particularly preferably 5 μm or less. The lower limit is preferably 1 μm or more. The number of vias may be 1 or 2 or more, and preferably 2 or more.

[0118] The vias are preferably formed by irradiating the composition layer with a laser beam after heating or exposure. ２ Examples of lasers include a carbon dioxide laser, a UV-YAG laser, a UV laser, a YAG laser, and an excimer laser. The number of shots in the laser light irradiation is preferably 5 or less, and more preferably 3 or less. In order to keep the number of shots within the above range, it is preferable to set the laser energy and pulse width to a certain value or more. The laser output is preferably 0.1 W or more, more preferably 0.3 W or more, and even more preferably 0.5 W or more. The upper limit is preferably 30 W or less, more preferably 10 W or less, and even more preferably 5 W or less. The laser pulse width is preferably 1 μsec or more, more preferably 5 μsec or more, and even more preferably 10 μsec or more. The upper limit is preferably 40 μsec or less, more preferably 35 μsec or less, and even more preferably 30 μsec or less.

[0119] Via formation using a laser can be carried out using a commercially available laser device. Examples of commercially available carbon dioxide laser devices include "LC-2E21B / 1C" manufactured by Hitachi Via Mechanics, Ltd., "ML605GTWII" manufactured by Mitsubishi Electric Corporation, "605GTWIII(-P)" manufactured by Mitsubishi Electric Corporation, and a substrate drilling laser processing machine manufactured by Matsushita Welding Systems Co., Ltd. Furthermore, examples of UV-YAG laser devices include "LU-2L212 / M50L" manufactured by Via Mechanics, Ltd.

[0120] <Step Z14> Step Z14 is a step of removing the temporary support. The method for removing the temporary support is not particularly limited, but a method of peeling off the temporary support is preferred. Peeling off the temporary support can be performed by a known method.

[0121] <Step Z15> Step Z15 is a step of forming a circuit pattern on the obtained pattern. The method of step Z15 can be the same as that of step Z4 described above.

[0122] The method for manufacturing a semiconductor package may include a roughening step of roughening a pattern having vias. In a first preferred embodiment, the roughening step is preferably carried out after the step Z3 and before the step Z4. In the method of aspect 2-1 or aspect 2-3 of the second preferred embodiment, the roughening step is preferably carried out after the step Z13 and before the step Z15. Furthermore, in the method of aspect 2-2 of the second preferred embodiment, the roughening step is preferably carried out after the step Z13 and before the step Z14. In the method of aspect 2-2 of the second preferred embodiment, the roughening step may be carried out after the step Z14 and before the step Z15. By carrying out the roughening step, the pattern surface can be roughened to improve adhesion with the circuit wiring. Furthermore, smears can be removed at the same time. Examples of the roughening step include a known desmearing treatment, and a treatment involving contact with a roughening solution is preferred. Examples of the roughening solution include a roughening solution containing chromium and sulfuric acid, a roughening solution containing an alkaline permanganate (e.g., a sodium permanganate roughening solution), and a roughening solution containing sodium fluoride, chromium, and sulfuric acid.

[0123] Furthermore, a dry desmear treatment is also preferred as the roughening step. An example of the dry desmear treatment is a desmear treatment using plasma. By treating the pattern using plasma generated by introducing a gas into a plasma generator, smears generated in via holes can be removed. The method for generating plasma is not particularly limited, and examples thereof include microwave plasma, high-frequency plasma, atmospheric pressure plasma, and vacuum plasma, with vacuum plasma being preferred. The type of gas used in the plasma treatment is not particularly limited, and F ２ , C.F. ３ , C ２ F ５ and SF ６ fluorine atom-containing gases such as N ２ and O ２ The treatment time in the dry desmear treatment is preferably 30 seconds or more, more preferably 60 seconds or more, further preferably 90 seconds or more, and particularly preferably 120 seconds or more. The upper limit is preferably 10 minutes or less, more preferably 5 minutes or less.

[0124] From the viewpoint of improving the electrical insulation reliability, curing characteristics, and adhesive strength with plated copper, it is preferable to carry out a heat treatment after forming the circuit pattern. The heating temperature is preferably 150 to 240°C, and the heating time is preferably 15 to 500 minutes.

[0125] In the method for manufacturing a semiconductor package, steps Z1 to Z5 may be repeated depending on the number of layers required. Also, in the method for manufacturing a semiconductor package, steps Z11 to Z16 may be repeated depending on the number of layers required. It is preferable to form a solder resist on the outermost layer of the resulting semiconductor package.

[0126] <Other Steps> The method for manufacturing a semiconductor package may include other steps in addition to the steps described above. Examples of such other steps include a step of peeling off the cover film, a step of reducing visible light reflectance, and a step of etching. Examples of methods for peeling off the cover film include known methods. Suitable examples of the treatment for reducing visible light reflectance include those described in paragraphs

[0017] to

[0025] of JP 2014-150118 A and paragraphs

[0041] ,

[0042] ,

[0048] , and

[0058] of JP 2013-206315 A, the contents of which are incorporated herein by reference. Examples of etching methods include the wet etching method described in paragraphs

[0048] to

[0054] of JP 2010-152155 A, and known dry etching methods such as plasma etching.

[0127] In a preferred method for manufacturing a semiconductor package, a substrate having a plurality of conductive layers on each surface is used, and patterns are formed sequentially or simultaneously on the conductive layers formed on both surfaces. This configuration allows a first conductive pattern to be formed on one surface of the substrate, and a second conductive pattern to be formed on the other surface. Formation from both surfaces of the substrate using a roll-to-roll process is also preferred.

[0128] [Semiconductor Package] The semiconductor package is not particularly limited as long as it contains the composition layer in the transfer film of the present invention. The semiconductor package may contain a film formed using the transfer film of the present invention. The film may be a film obtained by subjecting the composition layer in the transfer film to heating or exposure (for example, a cured film of the composition layer). The composition layer and the film may be used as an insulating film or as an organic interposer in a build-up substrate.

[0129] The present invention will be described in more detail below with reference to examples. The materials, amounts used, ratios, treatment details, treatment procedures, etc. shown in the following examples can be changed as appropriate without departing from the spirit of the present invention. Therefore, the scope of the present invention should not be construed as being limited by the examples shown below.

[0130] [Preparation of Compositions] Using solutions containing each evaluation compound (specific compound or comparative compound) obtained by the synthesis method shown below, methyl isobutyl ketone solutions (compositions) containing 40 mass% of each evaluation compound shown in the table below were prepared. In addition, other components shown in the table below were also added as necessary.

[0131] <Synthesis of Specific Compounds A to Q> In a 300 mL three-neck flask, predetermined amounts of various monomers corresponding to the structure of the target specific compound and methyl isobutyl ketone (75.0 g) were mixed and stirred while heating at an external temperature of 80°C. A 0.1% by mass aqueous potassium hydroxide solution (18.0 g) was added dropwise over 5 minutes at a constant rate, and the mixture was stirred and heated for 5 hours. During heating, the reaction was carried out while removing refluxing methanol from the system using a Dean-Stark apparatus. After stopping the stirring and cooling to room temperature (25°C) in a water bath, methyl isobutyl ketone (150 g) and 5% by mass saline (150 g) were added to extract the organic phase. The organic phase was washed once with 5% by mass saline (150 g) and twice with pure water (150 g), dried over magnesium sulfate (45 g), and then concentrated at 50°C under a reduced pressure of 35 mmHg to obtain a methyl isobutyl ketone solution containing any of Specific Compounds A to M. As described above, each composition was prepared using the methyl isobutyl ketone solution containing each specific compound obtained.

[0132] <Synthesis of Specific Compounds R, S, and T> In a 300 mL three-necked flask, (3-mercaptopropyl)trimethoxysilane (46.5 g), dimethoxydimethylsilane (28.5 g), and methyl isobutyl ketone (75.0 g) were mixed and stirred while heating at an external temperature of 80°C. A 0.1% by mass aqueous potassium hydroxide solution (18.0 g) was added dropwise at a constant rate over 5 minutes, and the mixture was stirred and heated for 5 hours. During heating, the reaction was carried out while removing refluxed methanol from the system using a Dean-Stark apparatus. After stopping the stirring and cooling to room temperature (25°C) in a water bath, methyl isobutyl ketone (150 g) and 5% by mass saline (150 g) were added, and the organic phase was extracted. The organic phase was washed once with 5% by mass saline (150 g) and twice with pure water (150 g), successively. After drying over magnesium sulfate (45 g), the mixture was concentrated at 50°C under a reduced pressure of 35 mmHg, yielding a thiol-containing organopolysiloxane as a solution with a solids content of 20%. In a 300 mL three-neck flask, a raw material compound that would react with the thiol group to give the target specific compound in accordance with its structure was mixed with the thiol-containing organopolysiloxane prepared by the above method so that the thiol group and the raw material compound were equimolar. The mixture was stirred under a nitrogen atmosphere at an external temperature of 80°C, and V-601 (Fujifilm Wako Pure Chemical Industries, Ltd.) was added at 0.25 mol% relative to the raw material compound. After 2 hours, V-601 was added at 0.25 mol% relative to the raw material compound, and the mixture was heated and stirred at 90°C for 2 hours. The stirring was stopped, and the mixture was cooled to room temperature (25° C.) in a water bath. The mixture was then concentrated at 50° C. under a reduced pressure of 35 mmHg to obtain a methyl isobutyl ketone solution containing any one of specific compounds R, S, and T. As described above, each composition was prepared using the obtained methyl isobutyl ketone solution containing each specific compound.

[0133] <Synthesis of Comparative Compounds X to Z> Comparative compounds X to Z were synthesized with reference to the synthesis method of the specific compounds described above. As described above, each composition was prepared using a methyl isobutyl ketone solution containing 40% by mass of each of the obtained comparative compounds.

[0134] The structures of the compounds evaluated are shown below, where Me represents a methyl group.

[0135]

[0136]

[0137] The structures and synthesis routes of the monomers used for each evaluation compound are shown below.

[0138]

[0139]

[0140]

[0141]

[0142]

[0143]

[0144]

[0145]

[0146] For the synthesis of SQ-R, SQ-M1D was used as a raw material compound to react with organopolysiloxane having a thiol group. Similarly, for the synthesis of SQ-S, SQ-M21 was used as a raw material compound.

[0147]

[0148] Similarly, SQ-M6D was used as a raw material compound for the synthesis of SQ-T.

[0149] Monomers SQ-B and SQ-L were synthesized with reference to the synthesis methods for the above-mentioned monomers.

[0150]

[0151]

[0152] [Preparation of Transfer Film] The prepared composition was applied to a temporary support (QS62, manufactured by Toray Industries, Inc., 31 μm thick PET film) and dried at 100°C to form a composition layer. The thickness of the composition layer after drying was adjusted to the thickness shown in the table below. Next, a cover film (FG-201, polypropylene film, manufactured by Oji F-Tex Co., Ltd., 30 μm thick) was laminated to the side of the composition layer opposite the temporary support to obtain a transfer film.

[0153] [X-ray Diffraction (XRD)] A copper-clad polyimide film (Metalloyal, manufactured by Toray Industries, Inc.) was used as the substrate, and a laminate having a composition layer on the substrate was obtained using the above-mentioned transfer film. After heating in an oven (200°C, 1.5 hours), the substrate was immersed in 2M hydrochloric acid for 8 hours for a peeling treatment, rinsed (in purified water at room temperature for 1 hour), and then peeled from the substrate to obtain a free-standing film derived from the composition layer. If the free-standing film could not be peeled by the above peeling treatment, it was further immersed in 2M hydrochloric acid for about 1 week for peeling. The obtained free-standing film was cut into strips to prepare measurement samples. The produced free-standing film was cut into strips (50 mm x 3 mm) to prepare measurement samples, and grazing incidence X-ray diffraction measurement was performed using a Rigaku SmartLab. The measurement conditions were: X-ray source: CuKα (45 kV, 200 mA), incident angle 0.18°.

[0154] (Evaluation criteria) "A": A diffraction peak showing a maximum value was observed in the range of diffraction angle 2θ of 20° or more. "B": A diffraction peak showing a maximum value was observed in the range of diffraction angle 2θ of 18° or more and less than 20°. "C": A diffraction peak showing a maximum value was observed in the range of diffraction angle 2θ of less than 18°, or no diffraction peak showing a maximum value was observed.

[0155] [Evaluation] <Cracks (Evaluation 1)> The cover film of the transfer film prepared above was peeled off, and the exposed surface of the composition layer was observed using an optical microscope. Using the optical microscope, 10 random points (1 mm x 1 mm) were observed, and the presence or absence of cracks was evaluated based on the following evaluation criteria. A grade of B or higher is preferred.

[0156] (Evaluation Criteria) "A": The occurrence of cracks was 0 out of 10. "B": The occurrence of cracks was observed in 1 or 2 out of 10. "C": The occurrence of cracks was observed in 3 or more out of 10.

[0157] <Cracks (Evaluation 2)> The cover film of the transfer film prepared above was peeled off, and the film was laminated onto a copper-clad polyimide film (Metaloyal, manufactured by Toray Industries, Inc.). Lamination was performed using a vacuum laminator manufactured by MCK Corporation under conditions of a substrate temperature of 50°C, a rubber roller temperature of 100°C, a linear pressure of 3 N / cm, and a conveying speed of 2 m / min. Thereafter, the temporary support was peeled off, and the exposed surface of the composition layer was observed using an optical microscope. Ten randomly selected points (1 mm x 1 mm) were observed using the optical microscope, and the presence or absence of cracks was evaluated according to the following evaluation criteria. A grade of B or higher is preferred.

[0158] (Evaluation Criteria) "A": The occurrence of cracks was 0 out of 10. "B": The occurrence of cracks was observed in 1 or 2 out of 10. "C": The occurrence of cracks was observed in 3 or more out of 10.

[0159] <Coefficient of Linear Expansion (CTE)> A measurement sample was obtained in the same manner as the measurement sample in the X-ray diffraction described above. The obtained measurement sample was measured for its coefficient of linear expansion using a TMA (thermomechanical analyzer, "TMA450EM" manufactured by TA Instruments). The measurement conditions were a temperature rise rate of 10°C / min, a chuck distance of 20 mm, and a load of 45 mN. The coefficient of linear expansion was measured as a value (ppm / K) in the range of 30 to 50°C during temperature rise, and was calculated as the average value of three measurements. A value of D or higher is preferred.

[0160] (Evaluation criteria) "A": Linear expansion coefficient is 80 ppm / K or less "B": Linear expansion coefficient is more than 80 ppm / K and less than 110 ppm / K "C": Linear expansion coefficient is more than 110 ppm / K and less than 150 ppm / K "D": Linear expansion coefficient is more than 150 ppm / K and less than 200 ppm / K "E": Linear expansion coefficient is more than 200 ppm / K

[0161] <Surface Roughness> The cover film of the transfer film prepared above was peeled off, and the surface of the exposed composition layer was measured using a newview 6210 manufactured by Zygo Corporation, and the surface roughness Ra in an area of ​​700 μm×500 μm was calculated.

[0162] <Copper Adhesion> The cover film was peeled off from the transfer film of each example. Next, under lamination conditions of a roll temperature of 100 ° C., a linear pressure of 0.8 MPa, and a linear speed of 1.0 m / min, a copper-clad polyimide film (Metalloyal, manufactured by Toray Industries, Inc.) and the transfer film from which the cover film had been peeled off were bonded together so that the copper surface of the copper-clad polyimide film and the composition layer were in contact with each other, to produce a laminate sample. The temporary support was peeled off from the resulting laminate sample, and the adhesion of the transfer film to copper (copper adhesion) was evaluated based on the observation results of the sample before peeling, and the temporary support and composition layer after peeling, based on the following evaluation criteria.

[0163] (Evaluation criteria) "A": After the temporary support is peeled off, the composition layer is not peeled off and is adhered to the copper-clad polyimide film. "B": After the temporary support is peeled off, a part of the composition layer is peeled off from the copper-clad polyimide film, or the composition layer is partially attached to the temporary support. "C": After the temporary support is peeled off, most of the composition layer is attached to the temporary support. "D": At the lamination stage before the temporary support is peeled off, the composition layer is not adhered to the copper-clad polyimide film.

[0164] <Via Shape> The cover film was peeled off from the transfer film of each example. Next, under lamination conditions of a roll temperature of 120°C, a linear pressure of 1.0 MPa, and a linear speed of 0.25 m / min, a copper-clad polyimide film (Metalloyal, manufactured by Toray Industries, Inc.) and the transfer film from which the cover film had been peeled off were bonded so that the copper surface of the copper-clad polyimide film and the composition layer were in contact with each other, producing a laminate sample. The temporary support was peeled off from the resulting laminate sample, and the composition layer was cured under curing conditions of 200°C for 90 minutes to form an insulating layer. Next, blind vias were formed using a 355 nm UV laser processing machine, and then the residue was removed using an aqueous sodium permanganate solution as a roughening solution. The cross section of the via was observed with an SEM, and the via shape was evaluated based on the following evaluation criteria. The evaluation results using the above method are shown in the table below as representative results.

[0165] (Evaluation Criteria) "A": There is no step of 1 μm or more on the via wall surface, and the maximum smear length from the bottom of the via hole is 2 μm or less. "B": There is a step of 1 μm or more on the via wall surface, or the maximum smear length from the bottom of the via hole is 2 μm or more.

[0166] Vias were formed and evaluated in the same manner except that the temporary support was peeled off after the vias were formed, and evaluation results equivalent to those of the above method were obtained. Furthermore, vias were formed and evaluated in the same manner except that the temporary support was peeled off after the composition layer was cured, and evaluation results equivalent to those of the above method were obtained.

[0167] The table below shows the composition and evaluation results of each composition. In the table, the column "Number of monocyclic ring structures in mesogenic group" indicates the total number of monocyclic ring structures among the rings contained in the group having a mesogenic group. The column "Content (mol %) of formula (1) unit" indicates the content (mol %) of the unit represented by formula (1) relative to all units of the specific compound. The column "Content (mol %) of formula (2) unit" indicates the content (mol %) of the unit represented by formula (2) relative to all units of the specific compound. The "content" of the evaluation compound and others indicates the content (mass %) relative to the total mass of the composition layer. Note that for all of the Examples with "A" in the "XRD" column, a diffraction peak showing a maximum value in the diffraction angle 2θ range of 20 to 25° was observed.

[0168]

[0169]

[0170] The evaluation results in the table confirm that the composition layer contained in the transfer film of the present invention has a low linear expansion coefficient of the resulting film and can suppress the occurrence of cracks. Furthermore, the evaluation results in the table confirm that the transfer film of the present invention can suppress the occurrence of cracks even when transferred, and the shape of the formed vias (pattern formability) is also good. That is, it has been confirmed that the transfer film of the present invention can achieve a high level of both the performance required for a dry film resist, such as crack suppression and pattern formability, and a low linear expansion coefficient, despite the usual trade-off relationship. It has been confirmed that the effects of the present invention are more excellent when the group having a mesogen group contains one or more rings, and the total number of monocyclic ring structures in the one or more rings is 3 or more (e.g., comparison of Examples 4 and 14 with other Examples). When the group having a mesogen group contains one or more rings, and the rings are bonded to each other via a divalent linking group (in other words, L in formula (X) ｘ２ and L in formula (Y). ｙ１ ~L ｙ３ is a divalent linking group), it has been confirmed that the effects of the present invention are more excellent (e.g., comparison between Examples 4 and 14). When a diffraction peak showing a maximum value in the range of a diffraction angle 2θ of 20° or more is observed in the X-ray diffraction spectrum obtained by X-ray diffractometry of a film obtained by Method A, it has been confirmed that the effects of the present invention are more excellent (e.g., comparison between Examples 1, 7, 11, and 13). It has been confirmed that the effects of the present invention are more excellent when the content of units represented by formula (2) is 35 to 70 mol% based on the total units of the organopolysiloxane (e.g., comparison between Examples 1, 9, and 10). It has been confirmed that when the composition layer does not contain a filler, the surface roughness, copper adhesion, and via shape are more excellent (e.g., comparison between Examples 27 and 28 and other Examples).

[0171] [Semiconductor Package Production] The cover film of each transfer film in each example was peeled off. The film with the exposed composition layer was laminated on both sides of a glass epoxy substrate (CCL-EL190T, 1.0 mm thick, manufactured by Mitsubishi Gas Chemical Co., Ltd.) on which a circuit pattern had been formed, forming a composition layer on both sides of the glass epoxy substrate. Lamination was performed using a vacuum laminator manufactured by MCK Corporation under conditions of a substrate temperature of 50°C, a rubber roller temperature of 100°C, a linear pressure of 3 N / cm, and a conveying speed of 2 m / min. After peeling off the temporary support, a heat treatment (200°C, 1.5 hours) was performed to harden the composition layer, and then 80 μmφ via holes were formed using a UV-YAG laser device. Residues were removed using an aqueous solution containing sodium permanganate as a roughening solution, neutralization was performed, and the substrate was dried at 80°C for 30 minutes. Next, to form a circuit pattern, electroless plating was performed, and a resist pattern was formed in a predetermined position using a known dry film resist. After electrolytic plating, the resist pattern was stripped using a stripping solution. Finally, a seed layer etching process was performed, followed by a heat treatment (180°C, 1 hour) to form copper wiring on the insulating film formed from the composition. The above process from lamination to heat treatment was performed a total of three times, and finally, a solder resist was formed as the outermost layer, and a semiconductor element was sealed and mounted to create a semiconductor package. The resulting semiconductor package was mounted in a predetermined position on a printed wiring board to obtain a semiconductor package substrate. It was confirmed that the resulting semiconductor package substrate operated normally.

[0172] 12: Temporary support 14: Composition layer 16: Cover film 100: Transfer film

Claims

1. A transfer film comprising a temporary support and a composition layer, wherein the composition layer comprises an organopolysiloxane, the organopolysiloxane comprises a unit represented by formula (1) and a unit represented by formula (2), and the content of the unit represented by formula (2) is 20 to 80 mol % based on the total units of the organopolysiloxane. ａ -SiO ３／２ Formula (2) R ｂ ２ -SiO ２／２ In formula (1) and formula (2), R ａ represents a group having a mesogenic group. ｂ each independently represents a hydrocarbon group or a group having a mesogenic group.

2. The transfer film according to claim 1, in which a diffraction peak showing a maximum value in the range of diffraction angle 2θ of 18° or more is observed in the X-ray diffraction spectrum by X-ray diffraction method of the film obtained by method A. Method A: A laminate having the composition layer on a substrate is obtained using the transfer film according to claim 1, and the composition layer in the laminate is heat-treated at 200°C for 1.5 hours, then immersed in 2M hydrochloric acid for 8 hours, rinsed with water, and peeled from the substrate of the laminate to obtain the film.

3. The transfer film according to claim 1, wherein a diffraction peak showing a maximum value in the range of a diffraction angle 2θ of 20° or more is observed in the X-ray diffraction spectrum of the film obtained by the X-ray diffraction method. Method A: A laminate having the composition layer on a substrate is obtained using the transfer film according to claim 1, and the composition layer in the laminate is heat-treated at 200°C for 1.5 hours, then immersed in 2M hydrochloric acid for 8 hours, rinsed with water, and peeled from the substrate in the laminate to obtain the film.

4. The transfer film according to claim 1, wherein the group having a mesogen group contains one or more rings, and the total number of monocyclic ring structures in the one or more rings is 3 or more.

5. The transfer film according to claim 1, wherein the group having a mesogen group contains one or more rings, and the total number of monocyclic ring structures in the one or more rings is four or more.

6. The transfer film according to claim 1, wherein the group having a mesogenic group has a heteroatom.

7. The transfer film according to claim 1, wherein the content of the units represented by formula (1) is 50 mol % or more based on the total amount of units represented by formula (T) in the organopolysiloxane. ｔ -SiO ３／２ In formula (T), R ｔ represents a substituent.

8. The transfer film according to claim 1, wherein the content of the unit represented by formula (2) is 50 mol % or more based on the total amount of the unit represented by formula (D) in the organopolysiloxane. ｄ ２ -SiO ２／２ In formula (D), R ｄ each independently represents a substituent.

9. The transfer film according to claim 1, wherein the content of the organopolysiloxane is 50% by mass or more based on the total mass of the composition layer.

10. A semiconductor package comprising the composition layer in the transfer film according to any one of claims 1 to 9.

11. A method for manufacturing a semiconductor package, comprising: step Z1 of forming a composition layer on a substrate using the transfer film according to any one of claims 1 to 9; and step Z2 of forming a pattern having vias in the composition layer.

12. A method for manufacturing a semiconductor package, comprising: step Z11 of forming a composition layer on a substrate using the transfer film according to any one of claims 1 to 9; step Z12 of heating or exposing the composition layer; and step Z13 of forming a pattern having vias in the heated or exposed composition layer using a laser, and step Z14 of removing the temporary support either before step Z12, between steps Z12 and Z13, or after step Z13.

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