Light-emitting device and image display device

Abstract

A light-emitting device according to an embodiment of the present disclosure is provided with: a light-emitting element having a first surface serving as a light-emitting surface and a second surface opposite to the first surface, and in which a first conductivity-type layer, an active layer, and a second conductivity-type layer are laminated in this order; a first metal layer provided on the second surface of the light-emitting element; and a second metal layer provided in a layer different from the first metal layer and extending without gaps below and around the light-emitting element together with the first metal layer in a plan view.

Description

Light-emitting device and image display device

[0001] The present disclosure relates to a light-emitting device and an image display device including the same.

[0002] For example, Patent Document 1 discloses an image display element having a metal electrode on the drive circuit board side, a transparent electrode on the opposite side of the drive circuit board, and light-emitting element bodies arranged in an array, each having a light-emitting layer on the opposite side of the drive circuit board.

[0003] Japanese Patent Application Laid-Open No. 2021-82687

[0004] Incidentally, there is a demand for improved reliability in light emitting devices in which a plurality of light emitting elements made of compound semiconductors are arranged in an array.

[0005] It is desirable to provide a light emitting device and an image display device that can improve reliability.

[0006] A light-emitting device according to one embodiment of the present disclosure comprises a light-emitting element having a first surface that serves as a light-emitting surface and a second surface opposite to the first surface, and having a first conductivity type layer, an active layer, and a second conductivity type layer stacked in this order; a first metal layer provided on the second surface of the light-emitting element; and a second metal layer provided on a layer different from the first metal layer, which extends seamlessly below and around the light-emitting element together with the first metal layer in a planar view.

[0007] An image display device according to an embodiment of the present disclosure includes a light-emitting device, and includes the light-emitting device according to the embodiment of the present disclosure as the light-emitting device.

[0008] In a light-emitting device and an image display device according to an embodiment of the present disclosure, a first metal layer and a second metal layer are provided on a second surface opposite to a first surface serving as a light-emitting surface of the light-emitting element. The first metal layer is provided on the second surface of the light-emitting element, and the second metal layer is provided on a layer different from the first metal layer. The first metal layer and the second metal layer extend without gaps below and around the light-emitting element in a plan view. This prevents light from entering the side opposite the light-emitting surface of the light-emitting element.

[0009] FIG. 1 is a cross-sectional view illustrating an example of the configuration of a light-emitting device according to a first embodiment of the present disclosure. FIG. 2 is a cross-sectional view illustrating an example of the overall planar configuration of the light-emitting device illustrated in FIG. 1. FIG. 3 is a cross-sectional view illustrating an enlarged portion of the planar configuration of the light-emitting device illustrated in FIG. 2. FIG. 4A is a cross-sectional view illustrating an example of a manufacturing process for the light-emitting device illustrated in FIG. 1. FIG. 4B is a cross-sectional view illustrating a process subsequent to FIG. 4A. FIG. 4C is a cross-sectional view illustrating a process subsequent to FIG. 4B. FIG. 4D is a cross-sectional view illustrating a process subsequent to FIG. 4C. FIG. 4E is a cross-sectional view illustrating a process subsequent to FIG. 4D. FIG. 4F is a cross-sectional view illustrating a process subsequent to FIG. 4E. FIG. 5A is a cross-sectional view illustrating a process subsequent to FIG. 4K. FIG. 5B is a cross-sectional view illustrating a process subsequent to FIG. 5A. FIG. 5C is a cross-sectional view illustrating a process subsequent to FIG. 5B. FIG. 5D is a cross-sectional view illustrating a process subsequent to FIG. 5C. FIG. 5E is a cross-sectional view illustrating a process subsequent to FIG. 5D. FIG. 5F is a schematic cross-sectional view showing a step subsequent to FIG. 5E. FIG. 5G is a schematic cross-sectional view showing a step subsequent to FIG. 5F. FIG. 5H is a schematic cross-sectional view showing a step subsequent to FIG. 5G. FIG. 5I is a schematic cross-sectional view showing a step subsequent to FIG. 5H. FIG. 5J is a schematic cross-sectional view showing a step subsequent to FIG. 5I. FIG. 5K is a schematic cross-sectional view showing a step subsequent to FIG. 5J. FIG. 5L is a schematic cross-sectional view showing a step subsequent to FIG. 5K. FIG. 5M is a schematic cross-sectional view showing a step subsequent to FIG. 5L. FIG. 5N is a schematic cross-sectional view showing a step subsequent to FIG. 5M. FIG. 6 is a schematic cross-sectional view showing a configuration example of a light-emitting device according to Modification 1 of the present disclosure. FIG. 7 is a schematic plan view of a light-emitting device corresponding to region A shown in FIG. 6. FIG. 8 is a schematic cross-sectional view showing an example of a configuration of a light-emitting device according to Modification 2 of the present disclosure. FIG. 9 is a schematic cross-sectional view showing an example of a configuration of a light-emitting device according to Modification 3 of the present disclosure. FIG. 10 is a schematic cross-sectional view showing an example of a configuration of a light-emitting device according to Modification 4 of the present disclosure. Fig. 11 is a schematic cross-sectional view showing a configuration example of a light-emitting device according to Modification 5 of the present disclosure. Fig. 12 is a schematic plan view of a light-emitting device corresponding to region A shown in Fig. 11. Fig. 13 is a schematic cross-sectional view showing a configuration example of a light-emitting device according to Modification 6 of the present disclosure. Fig. 14 is a schematic cross-sectional view showing a configuration example of a light-emitting device according to a second embodiment of the present disclosure. Fig. 15 is a schematic plan view of the light-emitting device shown in Fig. 14. Fig. 16 is a schematic cross-sectional view showing a configuration example of a light-emitting device according to Modification 7 of the present disclosure.FIG. 17 is a cross-sectional view schematically illustrating a configuration example of a light-emitting device according to Modification 8 of the present disclosure. FIG. 18 is a plan view schematically illustrating a light-emitting device corresponding to region A shown in FIG. 17. FIG. 19 is a cross-sectional view schematically illustrating a configuration example of a light-emitting device according to Modification 9 of the present disclosure. FIG. 20 is a cross-sectional view schematically illustrating a configuration example of a light-emitting device according to Modification 10 of the present disclosure. FIG. 21 is a cross-sectional view schematically illustrating a configuration example of a light-emitting device according to Modification 11 of the present disclosure. FIG. 22 is a cross-sectional view schematically illustrating a configuration example of a light-emitting device according to Modification 12 of the present disclosure. FIG. 23 is a cross-sectional view schematically illustrating a configuration example of a light-emitting device according to Modification 13 of the present disclosure. FIG. 224 is a cross-sectional view schematically illustrating a configuration example of a light-emitting device according to Modification 14 of the present disclosure. FIG. 25 is a cross-sectional view schematically illustrating a configuration example of a light-emitting device according to the third embodiment of the present disclosure. FIG. 26 is a plan view schematically illustrating a light-emitting device corresponding to Sec1 shown in FIG. 25. FIG. 27A is a cross-sectional view schematically illustrating an example of a manufacturing process for the light-emitting device shown in FIG. 25. 27B is a cross-sectional view illustrating a step subsequent to FIG. 27A . FIG. 27C is a cross-sectional view illustrating a step subsequent to FIG. 27B . FIG. 27D is a cross-sectional view illustrating a step subsequent to FIG. 27C . FIG. 27E is a cross-sectional view illustrating a step subsequent to FIG. 27D . FIG. 27F is a cross-sectional view illustrating a step subsequent to FIG. 27E . FIG. 27G is a cross-sectional view illustrating a step subsequent to FIG. 27F . FIG. 27H is a cross-sectional view illustrating a step subsequent to FIG. 27G . FIG. 27I is a cross-sectional view illustrating a step subsequent to FIG. 27H . FIG. 27J is a cross-sectional view illustrating a step subsequent to FIG. 27I . FIG. 28A is a cross-sectional view illustrating another example of a manufacturing process for the light-emitting device illustrated in FIG. 26 . FIG. 28B is a cross-sectional view illustrating a step subsequent to FIG. 28A . FIG. 28C is a cross-sectional view illustrating a step subsequent to FIG. 28B . FIG. 29 is a cross-sectional view illustrating a configuration example of a light-emitting device according to a fourth embodiment of the present disclosure. Fig. 30 is a schematic plan view of a light emitting device corresponding to Sec1 shown in Fig. 29. Fig. 31A is a schematic cross-sectional view illustrating an example of a manufacturing process for the light emitting device shown in Fig. 29. Fig. 31B is a schematic cross-sectional view illustrating a process following Fig. 31A. Fig. 31C is a schematic cross-sectional view illustrating a process following Fig. 31B. Fig. 31D is a schematic cross-sectional view illustrating a process following Fig. 31C. Fig. 31E is a schematic cross-sectional view illustrating a process following Fig. 31D. Fig. 31F is a schematic cross-sectional view illustrating a process following Fig. 31E.FIG. 31G is a schematic cross-sectional view illustrating a step subsequent to FIG. 31F. FIG. 31H is a schematic cross-sectional view illustrating a step subsequent to FIG. 31G. FIG. 31I is a schematic cross-sectional view illustrating a step subsequent to FIG. 31H. FIG. 31J is a schematic cross-sectional view illustrating a step subsequent to FIG. 31I. FIG. 31K is a schematic cross-sectional view illustrating a step subsequent to FIG. 31J. FIG. 31L is a schematic cross-sectional view illustrating a step subsequent to FIG. 31K. FIG. 31M is a schematic cross-sectional view illustrating a step subsequent to FIG. 31L. FIG. 32A is a schematic cross-sectional view illustrating another example of a manufacturing process for a light-emitting device according to Modification 15 of the present disclosure. FIG. 32B is a schematic cross-sectional view illustrating a step subsequent to FIG. 32A. FIG. 32C is a schematic cross-sectional view illustrating a step subsequent to FIG. 32B. FIG. 33A is a schematic cross-sectional view illustrating another example of a manufacturing process for a light-emitting device according to Modification 16 of the present disclosure. FIG. 33B is a schematic cross-sectional view illustrating a step subsequent to FIG. 33A. 33C is a cross-sectional view illustrating a step subsequent to FIG. 33B. FIG. 34A is a cross-sectional view illustrating another example of a manufacturing process for a light-emitting device according to Modification 17 of the present disclosure. FIG. 34B is a cross-sectional view illustrating a step subsequent to FIG. 34A. FIG. 34C is a cross-sectional view illustrating a step subsequent to FIG. 34B. FIG. 35A is a cross-sectional view illustrating another example of a manufacturing process for a light-emitting device according to Modification 18 of the present disclosure. FIG. 35B is a cross-sectional view illustrating a step subsequent to FIG. 35A. FIG. 35C is a cross-sectional view illustrating a step subsequent to FIG. 35B. FIG. 35D is a cross-sectional view illustrating a step subsequent to FIG. 35C. FIG. 35E is a cross-sectional view illustrating a step subsequent to FIG. 35D. FIG. 36 is a cross-sectional view illustrating a configuration example of a light-emitting device according to Modification 19 of the present disclosure. FIG. 37 is a cross-sectional view illustrating a configuration example of a light-emitting device according to the fifth embodiment of the present disclosure. FIG. 38 is a plan view schematic of a light-emitting device corresponding to Sec1 shown in FIG. 37. Fig. 39A is a cross-sectional view illustrating an example of a manufacturing process for the light-emitting device shown in Fig. 29 . Fig. 39B is a cross-sectional view illustrating a process subsequent to Fig. 39A . Fig. 39C is a cross-sectional view illustrating a process subsequent to Fig. 39B . Fig. 39D is a cross-sectional view illustrating a process subsequent to Fig. 39C . Fig. 39E is a cross-sectional view illustrating a process subsequent to Fig. 39D . Fig. 40 is a cross-sectional view illustrating a configuration example of a light-emitting device according to a sixth embodiment of the present disclosure. Fig. 41 is a plan view schematic of a light-emitting device corresponding to Sec1 shown in Fig. 40 .FIG. 42 is a cross-sectional schematic diagram illustrating a configuration example of a light-emitting device according to Modification 20 of the present disclosure. FIG. 43 is a cross-sectional schematic diagram illustrating a configuration example of a light-emitting device according to Modification 21 of the present disclosure. FIG. 44 is a cross-sectional schematic diagram illustrating a configuration example of a light-emitting device according to Modification 22 of the present disclosure. FIG. 45 is a plan view schematic diagram illustrating another example of the layout of the warpage adjustment film shown in FIG. 44. FIG. 46A is a front view illustrating an example of the appearance of a digital still camera as an application example of the present disclosure. FIG. 46B is a rear view illustrating an example of the appearance of the digital still camera shown in FIG. 46A. FIG. 47A is a perspective view illustrating the appearance of an example of a head-mounted display as an application example of the present disclosure. FIG. 47B is a perspective view illustrating the appearance of another example of a head-mounted display as an application example of the present disclosure. FIG. 48 is a perspective view illustrating an example of the appearance of a television set as an application example of the present disclosure. FIG. 49 is a cross-sectional schematic diagram illustrating a configuration example of a light-emitting device according to Modification 23 of the present disclosure. FIG. 50 is a cross-sectional schematic diagram illustrating a configuration example of a light-emitting device according to Modification 24 of the present disclosure. FIG. 51 is a cross-sectional view schematically illustrating a configuration example of a light-emitting device according to Modification 25 of the present disclosure. FIG. 52 is a cross-sectional view schematically illustrating a configuration example of a light-emitting device according to Modification 26 of the present disclosure. FIG. 53 is a cross-sectional view schematically illustrating a configuration example of a light-emitting device according to Modification 27 of the present disclosure. FIG. 54A is a cross-sectional view schematically illustrating an example of a manufacturing process for the light-emitting device shown in FIG. 53. FIG. 54B is a cross-sectional view schematically illustrating a process subsequent to FIG. 54A. FIG. 54C is a cross-sectional view schematically illustrating a process subsequent to FIG. 54B. FIG. 54D is a cross-sectional view schematically illustrating a process subsequent to FIG. 54C. FIG. 54E is a cross-sectional view schematically illustrating a process subsequent to FIG. 54D. FIG. 55 is a cross-sectional view schematically illustrating a configuration example of a light-emitting device according to Modification 28 of the present disclosure. FIG. 56 is a plan view schematically illustrating the light-emitting device shown in FIG. 55. FIG. 57A is a cross-sectional view schematically illustrating an example of a manufacturing process for the light-emitting device shown in FIG. 56. FIG. 57B is a cross-sectional view schematically illustrating a process subsequent to FIG. 57A. Fig. 57C is a schematic cross-sectional view showing a step following Fig. 57B. Fig. 57D is a schematic cross-sectional view showing a step following Fig. 57C. Fig. 57E is a schematic cross-sectional view showing a step following Fig. 57D. Fig. 57F is a schematic cross-sectional view showing a step following Fig. 57E. Fig. 57G is a schematic cross-sectional view showing a step following Fig. 57F. Fig. 58 is a schematic cross-sectional view showing a configuration example of a light-emitting device according to Modification 29 of the present disclosure.FIG. 59 is a schematic plan view of the light-emitting device shown in FIG. 58 . FIG. 60 is a schematic cross-sectional view illustrating a configuration example of a light-emitting device according to Modification 30 of the present disclosure. FIG. 61 is a schematic cross-sectional view illustrating a configuration example of a light-emitting device according to Modification 31 of the present disclosure. FIG. 62 is a schematic cross-sectional view illustrating a configuration example of a light-emitting device according to Modification 32 of the present disclosure. FIG. 63 is a schematic plan view of the light-emitting device shown in FIG. 62 . FIG. 64 is a schematic cross-sectional view illustrating a configuration example of a light-emitting device according to Modification 33 of the present disclosure. FIG. 65 is a schematic cross-sectional view illustrating a configuration example of a light-emitting device according to Modification 34 of the present disclosure. FIG. 66 is a schematic plan view illustrating an example configuration of a light-emitting device according to Modification 35 of the present disclosure. FIG. 67 is a schematic plan view illustrating another example configuration of a light-emitting device according to Modification 35 of the present disclosure. FIG. 68 is a schematic plan view illustrating another example configuration of a light-emitting device according to Modification 35 of the present disclosure. FIG. 69 is a schematic cross-sectional view illustrating an example configuration of a light-emitting device according to Modification 36 of the present disclosure. FIG. 70 is a schematic plan view of the light-emitting device shown in FIG. 69 . FIG. 71A is a schematic cross-sectional view illustrating an example of a manufacturing process for the light-guiding section shown in FIG. 69 . FIG. 71B is a schematic cross-sectional view illustrating a process subsequent to FIG. 71A . FIG. 71C is a schematic cross-sectional view illustrating a process subsequent to FIG. 71B . FIG. 71D is a schematic cross-sectional view illustrating a process subsequent to FIG. 71C . FIG. 71E is a schematic cross-sectional view illustrating a process subsequent to FIG. 71D . FIG. 71F is a schematic cross-sectional view illustrating a process subsequent to FIG. 71E . FIG. 71G is a schematic cross-sectional view illustrating a process subsequent to FIG. 71F . FIG. 72 is a schematic cross-sectional view illustrating a configuration example of a light-emitting device according to Modification 37 of the present disclosure. FIG. 73 is a schematic cross-sectional view illustrating a configuration example of a light-emitting device according to Modification 38 of the present disclosure. FIG. 74 is a schematic plan view of the light-emitting device shown in FIG. 73 . FIG. 75A is a schematic cross-sectional view illustrating an example of the layout of the convex portions shown in FIG. 73 . Fig. 75B is a schematic plan view showing another example of the layout of the convex portions shown in Fig. 73. Fig. 75C is a schematic plan view showing another example of the layout of the convex portions shown in Fig. 73. Fig. 75D is a schematic plan view showing another example of the layout of the convex portions shown in Fig. 73. Fig. 75E is a schematic plan view showing another example of the layout of the convex portions shown in Fig. 73. Fig. 76A is a schematic cross-sectional view illustrating one example of a manufacturing process for the hollow structure shown in Fig. 73. Fig. 76B is a schematic cross-sectional view showing a process subsequent to Fig. 76A. Fig. 76C is a schematic cross-sectional view showing a process subsequent to Fig. 76B.FIG. 76D is a schematic cross-sectional view showing a step subsequent to FIG. 76C . FIG. 76E is a schematic cross-sectional view showing a step subsequent to FIG. 76D . FIG. 77 is a schematic cross-sectional view showing a configuration example of a light-emitting device according to Modification 39 of the present disclosure. FIG. 78 is a schematic cross-sectional view showing an example of a configuration of a light-emitting device according to Modification 40 of the present disclosure. FIG. 79 is a schematic cross-sectional view showing another example of the configuration of a light-emitting device according to Modification 40 of the present disclosure. FIG. 80 is a schematic cross-sectional view showing an example of a configuration of a light-emitting device according to Modification 41 of the present disclosure. FIG. 81 is a schematic plan view showing an example of the layout of the second metal layer shown in FIG. 80 . FIG. 82 is a schematic plan view showing another example of the layout of the second metal layer shown in FIG. 80 . FIG. 83 is a schematic plan view showing another example of the layout of the second metal layer shown in FIG. 80 . FIG. 84 is a schematic plan view showing another example of the layout of the second metal layer shown in FIG. 80 . FIG. 85 is a schematic plan view showing another example of the layout of the second metal layer shown in FIG. 80 . FIG. 86 is a plan view schematic diagram showing another example of the layout of the second metal layer shown in FIG. 80 . FIG. 87 is a plan view schematic diagram showing an example of a planar configuration (A) and cross-sectional configurations (B) and (C) of a light-emitting device according to Variation 42 of the present disclosure. FIG. 88A is a plan view schematic diagram showing another example of the shape of the cutout portion shown in FIG. 87 . FIG. 88B is a plan view schematic diagram showing another example of the shape of the cutout portion shown in FIG. 87 . FIG. 88C is a plan view schematic diagram showing another example of the shape of the cutout portion shown in FIG. 87 . FIG. 88D is a plan view schematic diagram showing another example of the shape of the cutout portion shown in FIG. 87 . FIG. 88E is a plan view schematic diagram showing another example of the shape of the cutout portion shown in FIG. 87 . FIG. 88F is a plan view schematic diagram showing another example of the shape of the cutout portion shown in FIG. 87 . FIG. 88G is a plan view schematic diagram showing another example of the shape of the cutout portion shown in FIG. 87 . FIG. 88H is a plan view schematic diagram showing another example of the shape of the cutout portion shown in FIG. 87 . Fig. 89A is a schematic cross-sectional view showing another example of the shape of the cutout portion shown in Fig. 87. Fig. 89B is a schematic cross-sectional view showing another example of the shape of the cutout portion shown in Fig. 87. Fig. 89C is a schematic cross-sectional view showing another example of the shape of the cutout portion shown in Fig. 87. Fig. 89D is a schematic cross-sectional view showing another example of the shape of the cutout portion shown in Fig. 87. Fig. 89E is a schematic cross-sectional view showing another example of the shape of the cutout portion shown in Fig. 87.

[0010] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. The following description is a specific example of the present disclosure, and the present disclosure is not limited to the following aspect. Furthermore, the present disclosure is not limited to the arrangement, dimensions, dimensional ratios, etc. of each component shown in each drawing. The order of description is as follows: 1. First embodiment (an example of a light-emitting device having a light-shielding structure made of a first metal layer provided on the side opposite to the light-emitting surface of a light-emitting element and a second metal layer provided in a layer different from the first metal layer and extending around the periphery of the light-emitting element) 2. Modifications 2-1. Modification 1 (another example of the configuration of a light-emitting device) 2-2. Modification 2 (another example of the configuration of a light-emitting device) 2-3. Modification 3 (another example of the configuration of a light-emitting device) 2-4. Modification 4 (another example of the configuration of a light-emitting device) 2-5. Modification 5 (another example of the configuration of a light-emitting device) 2-6. Modification 6 (another example of the configuration of a light-emitting device) 3. Second embodiment (an example of a light-emitting device having a light-absorbing layer on the side opposite to the light-emitting surface of a light-emitting element) 4. 4. Modifications 4-1. Modification 7 (Another Example of the Configuration of a Light-Emitting Device) 4-2. Modification 8 (Another Example of the Configuration of a Light-Emitting Device) 4-3. Modification 9 (Another Example of the Configuration of a Light-Emitting Device) 4-4. Modification 10 (Another Example of the Configuration of a Light-Emitting Device) 4-5. Modification 11 (Another Example of the Configuration of a Light-Emitting Device) 4-6. Modification 12 (Another Example of the Configuration of a Light-Emitting Device) 4-7. Modification 13 (Another Example of the Configuration of a Light-Emitting Device) 4-8. Modification 14 (Another Example of the Configuration of a Light-Emitting Device) 5. Third Embodiment (Example of a Light-Emitting Device in Which an Insulating Film Covering a Side of a Light-Emitting Element is Formed Using a Material with a Low Impurity Concentration) 6. Fourth Embodiment (Example of a Light-Emitting Device Having a Single-Crystal Si Layer on the Side Opposite to the Light-Emitting Surface of the Light-Emitting Element) 7. Modifications 7-1. Modification 15 (Another Example of a Method for Manufacturing a Light-Emitting Device) 7-2. Modification 16 (Another Example of a Method for Manufacturing a Light-Emitting Device) 7-3. Modification 17 (Another Example of a Method for Manufacturing a Light-Emitting Device) 7-4. Modification 18 (Another example of a manufacturing method for a light-emitting device) 7-5. Modification 19 (Another example of a configuration of a light-emitting device) 8. Fifth embodiment (An example of a light-emitting device in which a connection layer is provided in an opening that serves as a contact portion between the second metal layer and the extraction electrode) 9. Sixth embodiment (An example of a light-emitting device in which a warpage correction film is provided between the first metal layer and the second metal layer)10. Modifications 10-1. Modification 20 (Another Example of the Configuration of a Light-Emitting Device) 10-2. Modification 21 (Another Example of the Configuration of a Light-Emitting Device) 10-3. Modification 22 (Another Example of the Configuration of a Light-Emitting Device) 11. Modifications 11-1. Modification 23 (Another Example of the Configuration of a Light-Emitting Device) 11-2. Modification 24 (Another Example of the Configuration of a Light-Emitting Device) 11-3. Modification 25 (Another Example of the Configuration of a Light-Emitting Device) 11-4. Modification 26 (Another Example of the Configuration of a Light-Emitting Device) 11-5. Modification 27 (Another Example of the Configuration of a Light-Emitting Device) 11-6. Modification 28 (Another Example of the Configuration of a Light-Emitting Device) 11-7. Modification 29 (Another Example of the Configuration of a Light-Emitting Device) 11-8. Modification 30 (Another Example of the Configuration of a Light-Emitting Device) 11-9. Modification 31 (Another Example of the Configuration of a Light-Emitting Device) 11-10. Modification 32 (Another Example of the Configuration of a Light-Emitting Device) 11-11. 11-11. Modification 33 (Another example of the configuration of a light-emitting device) 11-12. Modification 34 (Another example of the configuration of a light-emitting device) 11-13. Modification 35 (Another example of the configuration of a light-emitting device) 11-14. Modification 36 (Another example of the configuration of a light-emitting device) 11-15. Modification 37 (Another example of the configuration of a light-emitting device) 11-16. Modification 38 (Another example of the configuration of a light-emitting device) 11-17. Modification 39 (Another example of the configuration of a light-emitting device) 11-18. Modification 40 (Another example of the configuration of a light-emitting device) 11-19. Modification 41 (Another example of the configuration of a light-emitting device) 11-20. Modification 42 (Another example of the configuration of a light-emitting device) 12. Application examples

[0011] 1. First Embodiment Fig. 1 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1) according to a first embodiment of the present disclosure. Fig. 2 is a schematic diagram illustrating an example of an overall planar configuration of the light-emitting device 1 illustrated in Fig. 1. The light-emitting device 1 is suitably applicable to an image display device known as an LED display (for example, an electronic viewfinder 1124 of a digital still camera 1120, see Fig. 46B).

[0012] The light-emitting device 1 includes a light-emitting element 11 having a surface 11S1 serving as a light-emitting surface and a surface 11S2 opposite to the surface 11S1. The light-emitting element 11 has a first conductivity-type layer 111, an active layer 112, and a second conductivity-type layer 113 stacked in this order from the surface 11S2 side. In the light-emitting device 1, a first metal layer 12 is provided on the surface 11S2 of the light-emitting element 11. Furthermore, a second metal layer 15 is provided below the first metal layer 12 and extends together with the first metal layer 12 below and around the light-emitting element 11 without any gaps in a plan view.

[0013] Here, the light-emitting element 11 corresponds to a specific example of a "light-emitting element" in one embodiment of the present disclosure. The surface 11S1 corresponds to a specific example of a "first surface" in one embodiment of the present disclosure, and the surface 11S2 corresponds to a specific example of a "second surface" in one embodiment of the present disclosure. The first conductivity type layer 111 corresponds to a specific example of a "first conductivity type layer" in one embodiment of the present disclosure, the active layer 112 corresponds to a specific example of an "active layer" in one embodiment of the present disclosure, and the second conductivity type layer 113 corresponds to a specific example of a "second conductivity type layer" in one embodiment of the present disclosure. The first metal layer 12 corresponds to a specific example of a "first metal layer" in one embodiment of the present disclosure, and the second metal layer 15 corresponds to a specific example of a "second metal layer" in one embodiment of the present disclosure.

[0014] [Configuration of Light-Emitting Device] The light-emitting device 1 has a pixel array section 100A in which a plurality of light-emitting elements 11 are arranged in a two-dimensional array, and a peripheral section 100B provided around the pixel array section 100A. The light-emitting device 1 is, for example, configured such that an element substrate 10 in which a plurality of light-emitting elements 11 are arranged in an array, and a wavelength conversion section 20 are stacked in this order on the surface 30S1 side of a drive substrate 30 having an opposing front surface (surface 30S1) and back surface (surface 30S2).

[0015] As described above, the element substrate 10 has a plurality of light-emitting elements 11 arranged in a two-dimensional array in the pixel array section 100A. The light-emitting elements 11 have a generally regular hexagonal shape, for example, as shown in FIG. 3 , and are arranged in, for example, a honeycomb pattern. An electrode layer 114 and an insulating layer 115 are provided on the surface 11S1 side of the plurality of light-emitting elements 11, and insulating layers 116 and 117 and an extraction electrode 16 are provided for each element. A first metal layer 12 and an insulating layer 13 are provided on the surface 11S2 side of the plurality of light-emitting elements 11, for example, in this order, for each element. An insulating layer 118 is provided on the surface 11S2 side of the plurality of light-emitting elements 11 to planarize the surface facing the drive substrate 30. Further provided on the surface 11S2 side of the plurality of light-emitting elements 11 are a plurality of plugs 14 provided for each element, an insulating layer 17 including a second metal layer 15, etc., and an insulating layer 18 including a plurality of pad portions 19 that electrically and physically bond the element substrate 10 and the drive substrate 30 together, in this order.

[0016] The light-emitting element 11 corresponds to a specific example of a "light-emitting element" in an embodiment of the present disclosure. The light-emitting element 11 is a solid-state light-emitting element that emits light in a predetermined wavelength band from a surface 11S1, and is, for example, an LED (Light Emitting Diode) chip. The LED chip refers to an element cut from a wafer used for crystal growth, and is not a packaged type covered with molded resin or the like. The LED chip has a size of, for example, 5 μm to 100 μm, and is a so-called micro LED.

[0017] The light emitting element 11 has a first conductivity type layer 111, an active layer 112, and a second conductivity type layer 113 stacked in this order, and the upper surface of the second conductivity type layer 113 serves as a light emitting surface (surface 11S1).

[0018] The first conductivity type layer 111 is formed of, for example, an n-type GaN-based semiconductor material. The active layer 112 has, for example, a multiple quantum well structure in which InGaN and GaN are alternately stacked, and has a light-emitting region within the layer. Light in the blue band of, for example, 430 nm to 500 nm is extracted from the active layer 112. In addition, light with a wavelength corresponding to, for example, the ultraviolet region (ultraviolet light) may also be extracted from the active layer 112. The second conductivity type layer 113 is formed of, for example, a p-type GaN-based semiconductor material.

[0019] The light-emitting element 11 has, for example, a mesa shape processed from the side of the second conductivity-type layer 113. An electrode layer 114 is provided on an upper surface (surface 11S1) of the second conductivity-type layer 113, which serves as a light-emitting surface of the light-emitting element 11. The electrode layer 114 is in ohmic contact with the second conductivity-type layer 113 as, for example, a cathode electrode of the light-emitting element 11, and is formed of a transparent electrode material such as indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO), or TiO.

[0020] The insulating layer 115 is provided on the electrode layer 114. The insulating layer 115 is made of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0021] As described above, the insulating layers 116 and 117 are provided continuously on the plurality of light-emitting elements 11. Specifically, the insulating layers 116 and 117 are provided in this order from the insulating layer 115 formed on the surface 11S1 side of the plurality of light-emitting elements 11 arranged in a two-dimensional array to cover the side surface of each light-emitting element 11 processed into a mesa shape. The insulating layers 116 and 117 are made of, for example, silicon oxide (SiO), silicon nitride (SiN), aluminum oxide (Al ２ O ３ ), aluminum nitride (AlN), or the like.

[0022] The extraction electrode 16 applies a voltage to the second conductivity type layer 113 of each of the light-emitting elements 11 and, like the insulating layers 116 and 117, is provided continuously on the light-emitting elements 11. The insulating layers 115, 116, and 117 provided on the surface 11S1 of the light-emitting element 11 have openings 115H penetrating them, with the electrode layer 114 exposed at the bottom of the openings 115H (see FIG. 5J ). The extraction electrode 16 is electrically connected to the electrode layer 114 through the openings 115H. The extraction electrode 16 is provided, for example, over the entire surface of the pixel array section 100A and extends to a portion of the outer periphery section 100B. The extraction electrode 16 extending to the outer periphery section 100B is electrically connected to the second metal layer 15 (described later) through openings H1 penetrating the insulating layers 116, 117, and 118. The extraction electrode 16 is formed of a transparent electrode material such as indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium oxide (InO), tin oxide (SnO), or TiO. The extraction electrode 16 corresponds to a specific example of a "second electrode layer" in one embodiment of the present disclosure.

[0023] A first metal layer 12 is provided on the lower surface (surface 11S2) of the first conductivity-type layer 111 of the light-emitting element 11. The first metal layer 12 is in ohmic contact with the first conductivity-type layer 111 as, for example, an anode electrode of the light-emitting element 11 and is formed, for example, using a metal material having high optical reflectivity. Examples of such metal materials include aluminum (Al), silver (Ag), tantalum (Ta), titanium (Ti), gold (Ag), platinum (Pt), nickel (Ni), and alloys containing these as main components. The first metal layer 12 corresponds to a specific example of a "first electrode layer" in one embodiment of the present disclosure.

[0024] The insulating layer 13 is provided on the first metal layer 12. The insulating layer 13 is made of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0025] An opening 118H is formed in the insulating layer 118 provided on the surface 11S2 side of the plurality of light emitting elements 11, penetrating the insulating layer 118 and the insulating layer 13, and a plug 14 is provided in the opening 118H.

[0026] The insulating layer 118 extends from the pixel array unit 100A to the outer periphery unit 100B on the surface 11S1 side of the plurality of light-emitting elements 11, and forms a flat surface on the surface 11S1 side of the plurality of light-emitting elements 11. The insulating layer 118 is formed of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0027] The plugs 14 apply a voltage to the first conductivity type layers 111 of each of the plurality of light emitting elements 11. The plugs 14 are formed using, for example, copper (Cu), aluminum (Al), tungsten (W), silver (Ag), or an alloy thereof.

[0028] On the drive substrate 30 side of the insulating layer 118, an insulating layer 17 and an insulating layer 18 are laminated in this order. A second metal layer 15 is embedded on the light-emitting side S1 of the insulating layer 17, and a plurality of pad portions 19 are embedded in the insulating layer 18. The insulating layer 17 further has vias that connect the second metal layer 15 and the plurality of pad portions 19.

[0029] The second metal layer 15, together with the first metal layer 12, serves to prevent light emitted from the light-emitting elements 11 from penetrating into the drive substrate 30, and extends without any steps over almost the entire surface of the pixel array section 100A. Specifically, as shown in Fig. 3, for example, the second metal layer 15 is provided below (on the drive substrate 30 side of) each of the plurality of light-emitting elements 11 arranged in a two-dimensional array, and has a plurality of pad sections 15A for electrically connecting each light-emitting element 11 to the drive substrate 30, and a light-shielding section 15B formed around the plurality of pad sections 15A and extending between adjacent pad sections 15A.

[0030] As mentioned at the beginning, in the light-emitting device 1, the second metal layer 15 extends seamlessly together with the first metal layer 12 below the light-emitting element 11 in a planar view. That is, the second metal layer 15 extends seamlessly together with the first metal layer 12 below the light-emitting element 11 in a planar view, so that at least the end faces of the first metal layer 12 and the light-shielding portions 15B extending between adjacent pad portions 15A are flush with each other in a cross-sectional view. Furthermore, as shown in FIG. 3, for example, it is preferable that the light-shielding portions 15B extending between adjacent pad portions 15A extend below the light-emitting element 11 so as to form an overlapping region X with the first metal layer 12 below the light-emitting element 11. This prevents stray light reflected by the second metal layer 15 into the plane of the element substrate 10 from being reflected by the first metal layer 12 and penetrating the drive substrate 30.

[0031] 1, the second metal layer 15 extends to the outer periphery 100B, and a portion thereof (light-shielding portion 15B) is electrically connected to the extraction electrode 16 via the opening H1. In other words, like the extraction electrode 16, the light-shielding portion 15B also serves as a common electrode for applying a voltage to the second conductivity-type layer 113 of each of the plurality of light-emitting elements 11. Another portion of the second metal layer 15 extending to the outer periphery 100B is used as an external connection terminal 15C. An opening H2 is formed on the external connection terminal 15C, penetrating, for example, the wavelength conversion portion 20 and insulating layers 116, 117, and 118 (described later), and the external connection terminal 15C is exposed to the outside at the bottom of the opening H2.

[0032] The second metal layer 15 is formed using, for example, aluminum (Al), silver (Ag), tantalum (Ta), titanium (Ti), tungsten (W), molybdenum (Mo), copper (Cu), gold (Ag), platinum (Pt), palladium (Pd), nickel (Ni), or an alloy containing any of these as a main component. Among the above metal materials, the second metal layer 15 is preferably formed using, for example, a metal material having a lower reflectivity than the first metal layer 12. The second metal layer 15 may be a single-layer film or a laminated film. When the second metal layer 15 is formed as a laminated film, it is sufficient that at least the light-emitting element 11 side is formed using a metal material having a lower reflectivity than the first metal layer 12.

[0033] The insulating layers 17 and 18 are formed of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0034] The pads 19 and vias are formed using, for example, copper (Cu), tantalum (Ta), cobalt (Co), titanium (Ti), aluminum (Al), tungsten (W), silver (Ag), or alloys thereof. Alternatively, the pads 19 and vias can be formed using, for example, tantalum nitride (TaN) or titanium nitride (TiN).

[0035] The wavelength conversion unit 20 is provided on the light emission side S1 of the element substrate 10. The wavelength conversion unit 20 includes a planarization layer 21, a partition layer 22 having an opening 22H (see FIG. 5M) for each light emitting element 11, for example, and a wavelength conversion layer 23 formed in the opening 22H. A reflective film 24 is further provided between the partition layer 22 and the wavelength conversion layer 23. A protective layer 25 is further provided on the light emission side S1 of the wavelength conversion layer 23, and a wavelength selection layer 26 is provided in the protective layer 25. An on-chip lens layer 27 is further provided on the protective layer 25.

[0036] The planarization layer 21 is intended to planarize the surface on the light emission side S1 of the element substrate 10. The planarization layer 21 is made of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0037] The partition wall layer 22 is intended to suppress color mixing due to light leakage between adjacent RGB subpixels (red pixel Pr, green pixel Pg, and blue pixel Pb). The partition wall layer 22 has, for example, a honeycomb structure. Specifically, the partition wall layer 22 has, for example, a substantially regular hexagonal opening 22H for each of the plurality of light-emitting elements 11 arranged in an array. In cross-sectional view, the opening 22H has, for example, an inclined surface that is less than 90° with respect to the surface 20S2 of the wavelength conversion unit 20 opposite to the surface 20S1. In other words, in cross-sectional view, the partition wall layer 22 has a forward tapered shape between adjacent color pixels Pr, Pg, and Pb. The partition wall layer 22 is preferably formed using a material with high thermal conductivity and electrical conductivity, such as a metal material such as copper (Cu), aluminum (Al), gold (Au), nickel (Ni), or platinum (Pt).

[0038] The wavelength conversion layer 23 converts light emitted from the plurality of light-emitting elements 11 into a desired wavelength (e.g., red (R) / green (G) / blue (B)) and emits the light, and is provided in an opening 22H provided above each light-emitting element 11. Specifically, the red pixel Pr is provided with a red wavelength conversion layer 23R that converts light emitted from the light-emitting elements 11 into light in a red wavelength band (red light), the green pixel Pg is provided with a green wavelength conversion layer 23G that converts light emitted from the light-emitting elements 11 into light in a green wavelength band (green light), and the blue pixel Pb is provided with a blue wavelength conversion layer 23B that converts light emitted from the light-emitting elements 11 into light in a blue wavelength band (blue light).

[0039] Each wavelength conversion layer 23R, 23G, 23B can be formed using quantum dots corresponding to each color. Specifically, when red light is obtained, the quantum dots can be selected from, for example, InP, GaInP, InAsP, CdSe, CdZnSe, CdTeSe, or CdTe. When green light is obtained, the quantum dots can be selected from, for example, InP, GaInP, ZnSeTe, ZnTe, CdSe, CdZnSe, CdS, or CdSeS. When blue light is obtained, the quantum dots can be selected from, for example, ZnSe, ZnTe, ZnSeTe, CdSe, CdZnSe, CdS, CdZnS, and CdSeS. Note that when blue light is emitted from the light-emitting element 11 as described above, the blue wavelength conversion layer 23B may be formed from a light-transmitting resin layer.

[0040] The reflective film 24 is provided on the side surface of the opening 22H to efficiently extract the color light emitted from the light-emitting element 11 and converted in the wavelength conversion layers 23R, 23G, and 23B from the light extraction surface (surface 22S1) of the wavelength conversion layer 23. The reflective film 24 is formed using a metal material with light reflectivity. Examples of the metal material for forming the reflective film 24 include metals with high reflectivity in the visible light range. Specific examples of the material include silver (Ag), aluminum (Al), copper (Cu), gold (Au), platinum (Pt), rhodium (Rh), and alloys thereof.

[0041] It should be noted that the reflective film 24 does not necessarily have to be formed when the partition wall layer 22 is formed using the above-mentioned metal material having light reflectivity.

[0042] The protective layer 25 is for protecting the surface of the light emitting device 1 and is made of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0043] A wavelength selection layer 26 is provided across the red pixel Pr and the green pixel Pg within the protective layer 25. The wavelength selection layer 26 selectively reflects, for example, light in the blue wavelength band (blue light), thereby improving the color purity of the red light and green light extracted from the red pixel Pr and the green pixel Pg, respectively.

[0044] The on-chip lens layer 27 is provided so as to cover the entire surfaces of the pixel array unit 100A and the peripheral unit 100B. The on-chip lens layer 27 is formed using an optically transparent material, and is configured, for example, as a single layer film made of any of silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiCN), etc., or a stacked film made of two or more of these materials.

[0045] The drive substrate 30 is provided with a drive circuit and the like that controls the drive of the plurality of light-emitting elements 11 arranged in the pixel array section 100A. The drive substrate 30 has a support substrate 31 made of, for example, silicon (Si), an interlayer insulating layer 32 that is provided on the support substrate 31 and includes a plurality of wiring layers (for example, wiring layers M1, M2, M3, M4, and M5) and vias that electrically connect the wiring layers, an insulating layer 33 that forms a bonding surface with the element substrate 10, and pad sections 34 that are embedded in the insulating layer 33.

[0046] The interlayer insulating layer 32 is made of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0047] The wiring layers M1, M2, M3, M4, and M5 and the vias electrically connecting the wiring layers are formed using, for example, copper (Cu), aluminum (Al), tungsten (W), silver (Ag), or alloys thereof. The insulating layer 33 is formed using, for example, silicon oxide (SiO), silicon nitride (SiN), or the like. The pad portion 35 is formed using, for example, copper (Cu).

[0048] [Method for Manufacturing Light-Emitting Device] The light-emitting device 1 of the present embodiment can be manufactured, for example, as follows. Figures 4A to 4F and 5A to 5N schematically show an example of a manufacturing process for the light-emitting device 1.

[0049] 4A , a compound semiconductor layer 110 is formed on a growth substrate 50 made of, for example, a sapphire substrate or a silicon substrate by epitaxial crystal growth using a method such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). Subsequently, an electrode layer 114 is formed on the compound semiconductor layer 110 by, for example, sputtering, and an insulating layer 115 is formed on the compound semiconductor layer 110 by, for example, chemical vapor deposition (CVD).

[0050] Next, as shown in Fig. 4B, the insulating layer 115, the electrode layer 114, and the compound semiconductor layer 110 are etched and patterned using, for example, photolithography. Subsequently, as shown in Fig. 4C, the growth substrate 50 is transferred to the support substrate 51 so that the insulating layer 115 faces the support substrate 51, and then the growth substrate 50 is cut into individual pieces. Next, as shown in Fig. 4D, each of the individual growth substrates 50 is bonded to the support substrate 52 so that the insulating layer 115 faces the support substrate 52.

[0051] 4E, the growth substrate 50 is removed by, for example, grinding and polishing, and the surface of the compound semiconductor layer 110 is planarized. Next, as shown in Fig. 4F, an insulating layer 118 is formed on the support substrate 52 by, for example, a CVD method, and then planarized. The area within the frame X shown in Fig. 4F will be explained below by enlarging it.

[0052] 5A, the insulating layer 118 on the compound semiconductor layer 110 is removed by, for example, chemical mechanical polishing (CMP). Next, as shown in Fig. 5A, the first metal layer 12 is formed on the exposed first conductivity type layer 111 by, for example, sputtering, and then the insulating layer 13 and the insulating layer 118 are formed in this order by, for example, CVD, and the surface is planarized.

[0053] 5B, the insulating layers 118 and 13 and the first metal layer 12 are etched using, for example, photolithography to form an opening 118H. Next, as shown in FIG. 5C, after Cu is embedded in the opening 118H, the Cu film formed on the insulating layer 118 is removed by, for example, CMP to form a plurality of plugs 14. Thereafter, as shown in FIG. 5C, a second metal layer 15 is formed on the insulating layer 118 by, for example, sputtering, and then the second metal layer 15 is patterned using, for example, photolithography to form a pad portion 15A and a light-shielding portion 15B.

[0054] Next, as shown in Fig. 5D, insulating layer 17 and insulating layer 18 are formed in this order by, for example, CVD. Next, as shown in Fig. 5E, openings 18H penetrating insulating layer 18 and insulating layer 17 are formed on pad portion 15A by, for example, photolithography. Next, as shown in Fig. 5F, multiple vias and pad portions 19 are formed by filling openings 18H with, for example, Cu. Thereafter, the surfaces of insulating layer 18 and multiple pad portions 19 are polished by, for example, CMP to flatten the bonding surfaces with drive substrate 30.

[0055] 5G, the plurality of pad portions 34 of the separately formed drive substrate 30 and the plurality of pad portions 19 are bonded together by hybrid bonding (CuCu bonding), for example, at 400° C. Thereafter, as shown in FIG. 5H, the support substrate 55 is peeled off.

[0056] 5I , the insulating layer 115 and the electrode layer 114 are etched and patterned using, for example, photolithography. Next, as shown in FIG. 5I , the first conductivity type layer 111, the active layer 112, and the second conductivity type layer 113 are etched using, for example, photolithography to form a plurality of light-emitting elements 11. Next, as shown in FIG. 5I , an insulating layer 116 is formed from the top surface of the insulating layer 115 by, for example, atomic layer deposition (ALD), extending over the insulating layer 115, the electrode layer 114, and the side surfaces of the light-emitting elements 11, as well as the insulating layer 17. Then, as shown in FIG. 5I , an insulating layer 117 is further formed by, for example, CVD.

[0057] 5J, an opening 115H exposing the second conductivity type layer 113 is formed on the light emitting element 11 using, for example, photolithography, and an opening H1 exposing the second metal layer 15 is formed in the outer peripheral portion 100B. Subsequently, as shown in FIG. 5K, an ITO film is formed using, for example, CVD, and then the ITO film is patterned using, for example, photolithography to form the extraction electrode 16.

[0058] 5L, a planarization layer 21 and a partition layer 22 are formed in order by, for example, CVD to fill the peripheries of the plurality of light-emitting elements 11 and to planarize the surface of the light-emitting side S1 of the element substrate 10. Subsequently, as shown in FIG. 5M, openings 22H are formed in the partition layer 22 above each light-emitting element 11 by, for example, photolithography.

[0059] Next, as shown in FIG. 5N , an Al film is formed on the top surface of the partition layer 22 and the side and bottom surfaces of the opening 22H by, for example, a CVD method, and then the Al film formed on the top surface of the partition layer 22 and the bottom surface of the opening 22H is removed by etch-back to form a reflective film 24 on the side surface of the opening 22H. Subsequently, as shown in FIG. 5N , wavelength conversion layers 23 (23R, 23G, 23B) of each color are formed in the opening 22H by, for example, a coating method such as an inkjet method. Thereafter, a protective layer 25 including a wavelength selection layer 26 is formed on the partition layer 22 and the wavelength conversion layer 23, and then an on-chip lens layer 27 is bonded to the protective layer 25. This completes the light-emitting device 1 shown in FIG. 1 .

[0060] [Functions and Effects] In the light-emitting device 1 of the present embodiment, a first metal layer 12 and a second metal layer 15 are provided on the surface 11S2 opposite to the surface 11S1, which is the light-emitting surface of the light-emitting element 11, so as to extend without gaps below and around the light-emitting element 11 in a planar view. The first metal layer 12 is provided on the surface 11S2 of the light-emitting element 11, and the second metal layer 15 is provided without any steps on the drive substrate 30 side of the first metal layer 12, with the insulating layer 118 in between. This prevents light from entering the drive substrate 30 side. This is explained below.

[0061] In recent years, high-definition image display devices using light-emitting devices with gallium nitride (GaN) micro-LEDs as light sources have become widespread. Light-emitting devices generally have a structure in which a substrate on which an LED is mounted is hybrid-bonded to a drive circuit board. Such light-emitting devices have a problem of drive abnormalities due to leakage current caused by, for example, LED light entering a transistor drive unit provided on the drive circuit board.

[0062] In contrast, in the present embodiment, a first metal layer 12 is provided on the surface 11S2 opposite to the light-emitting surface (surface 11S1) of the light-emitting element 11, and a second metal layer 15 is provided, for example, with an insulating layer 118 interposed therebetween, extending below and around the light-emitting element 11. As a result, in the pixel array section 100A in which a plurality of light-emitting elements 11 are arranged in a two-dimensional array, a light-shielding structure made up of the first metal layer 12 and the second metal layer 15 is formed extending without any gaps between the plurality of light-emitting elements 11 and the drive substrate 30 in a plan view. This makes it possible to prevent light emitted from the light-emitting elements 11 from penetrating into the drive substrate 30.

[0063] As a result, the light emitting device 1 of this embodiment can improve reliability.

[0064] The second to sixth embodiments, modifications 1 to 42, and application examples of the present disclosure will be described below. Note that components corresponding to those in the light-emitting device 1 of the first embodiment are given the same reference numerals, and descriptions thereof will be omitted.

[0065] 2. Modifications (2-1. Modification 1) Fig. 6 is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1A) according to Modification 1 of the present disclosure. Fig. 7 is a schematic diagram showing an example of a planar configuration of light-emitting device 1A corresponding to region A shown in Fig. 6. Similar to the first embodiment, light-emitting device 1A is suitably applicable to image display devices known as LED displays (for example, electronic viewfinder 1124 of digital still camera 1120).

[0066] In the first embodiment described above, an example is shown in which the extraction electrode 16, as a common electrode for the multiple light-emitting elements 11, extends from the surface 11S1 side of the multiple light-emitting elements 11 along the side surface and is electrically connected to the second metal layer 15 through the opening H1 in the outer periphery 100B, but this is not limited to this.

[0067] In the light emitting device 1A of this modification, an extraction electrode 16A is provided for each of the plurality of light emitting elements 11, and extends onto an insulating layer 118 that is provided to surround the plurality of light emitting elements 11. The extraction electrode 16A is electrically connected to the light-shielding portion 15B via a plug 16B that penetrates the insulating layers 116, 117, and 118. Except for this point, the light emitting device 1A has substantially the same configuration as the light emitting device 1 of the first embodiment described above.

[0068] In this modification, the second metal layer 15 has been omitted from the plurality of pads 15A provided for each light-emitting element 11 to electrically connect the light-emitting element 11 to the drive substrate 30, and the light-shielding portion 15B extends to the vicinity of the center of the light-emitting element 11 in plan view. This prevents stray light reflected by the second metal layer 15 into the plane of the element substrate 10 from being reflected by the first metal layer 12 and entering the drive substrate 30, as in the above embodiment.

[0069] In this way, in the light emitting device 1A of this modification, the extraction electrode 16A is provided for each of the plurality of light emitting elements 11, and is electrically connected to the light-shielding portion 15B (second metal layer 15) via the plug 16B that penetrates the insulating layers 116, 117, and 118. Even with this configuration, the light emitting device 1A of this modification can achieve the same effects as the light emitting device 1 of the first embodiment.

[0070] 8 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1B) according to Modification 2 of the present disclosure. Similar to the first embodiment, light-emitting device 1B is suitable for use in image display devices known as LED displays (for example, electronic viewfinder 1124 of digital still camera 1120).

[0071] In the above-mentioned variant example 1, an extraction electrode 16A is provided for each of the multiple light-emitting elements 11, and is electrically connected to the light-shielding portion 15B (second metal layer 15) via a plug 18B that penetrates the insulating layers 116, 117, and 118, but this is not limited to this.

[0072] In the light emitting device 1B of this modification, the extraction electrode 16A is formed continuously as a common electrode for the plurality of light emitting elements 11 and is extended to the outer peripheral portion 100B. The extraction electrode 16A extended to the outer peripheral portion 100B is electrically connected to the drive substrate 30 via a plug 16C that penetrates the insulating layers 116, 117, and 118 and reaches the third metal layer 41 provided on the insulating layer 17. In this modification, the second metal layer 15 is in an electrically floating state. Except for this point, the light emitting device 1B has substantially the same configuration as the light emitting device 1 of the first embodiment described above.

[0073] The third metal layer 41 also serves as a plurality of pads for electrically connecting each light-emitting element 11 to the drive substrate 30. The third metal layer 41 is provided closer to the drive substrate 30 than the second metal layer 15, and is provided, for example, within the insulating layer 17. The third metal layer 41 includes an external connection terminal 41A provided on the outer periphery 100B. Similar to the external connection terminal 15C of the first embodiment, an opening H2 is formed on the external connection terminal 41A, penetrating, for example, the wavelength conversion unit 20 and the insulating layers 116, 117, and 118, and the external connection terminal 41A is exposed to the outside at the bottom of the opening H2.

[0074] The third metal layer 41 is formed using, for example, aluminum (Al), silver (Ag), tantalum (Ta), titanium (Ti), tungsten (W), molybdenum (Mo), copper (Cu), gold (Ag), platinum (Pt), palladium (Pd), nickel (Ni), or an alloy containing any of these as a main component. Among the above metal materials, the third metal layer 41 is preferably formed using, for example, a metal material having a lower reflectivity than the first metal layer 12, similar to the second metal layer 15. The third metal layer 41 may be a single-layer film or a laminated film. When the third metal layer 41 is formed as a laminated film, it is sufficient that at least the light-emitting element 11 side is formed using a metal material having a lower reflectivity than the first metal layer 12.

[0075] In this way, in the light emitting device 1B of this modification, the extraction electrode 16 is formed continuously as a common electrode for the plurality of light emitting elements 11, and is also drawn out to the outer peripheral portion 100B and connected via the plug 16C to the third metal layer 41 that is electrically connected to the drive substrate 30. Even with this configuration, the light emitting device 1A of this modification can achieve the same effects as the light emitting device 1 of the first embodiment.

[0076] 9 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1C) according to Modification 3 of the present disclosure. Similar to the first embodiment, light-emitting device 1C is suitable for use in image display devices known as LED displays (for example, electronic viewfinder 1124 of digital still camera 1120).

[0077] In the first embodiment described above, an example is shown in which the extraction electrode 16 serves as a common electrode for multiple light-emitting elements 11 and is electrically connected to the second metal layer 15 through the opening H1 in the outer peripheral portion 100B, but this is not limited to this.

[0078] In the light emitting device 1C of this modification, an extraction electrode 16 is provided for each of the plurality of light emitting elements 11, and adjacent light emitting elements 11 are electrically connected to the light-shielding portion 15B via the opening H1 between them. As in the first embodiment, the light-shielding portion 15B extends between adjacent pad portions 15A and extends to the outer periphery 100B, and is electrically connected to the drive substrate 30 at the outer periphery 100B. Except for this point, the light emitting device 1C has substantially the same configuration as the light emitting device 1 of the first embodiment.

[0079] In this way, in the light emitting device 1C of this modification, an extraction electrode 16 is provided for each of the plurality of light emitting elements 11, and adjacent light emitting elements 11 are electrically connected to the light-shielding portion 15B (second metal layer 15) through the opening H1 between them. Even with this configuration, the light emitting device 1C of this modification can achieve the same effects as the light emitting device 1 of the first embodiment.

[0080] 10 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1D) according to Modification 4 of the present disclosure. Similar to the first embodiment, light-emitting device 1D is suitable for use in image display devices known as LED displays (for example, electronic viewfinder 1124 of digital still camera 1120).

[0081] In the above-mentioned variant example 3, an example is shown in which the extraction electrode 16 provided on each of the multiple light-emitting elements 11 and the light-shielding portion 15B electrically connected via the openings H1 provided between adjacent light-emitting elements 11 are electrically connected to the drive substrate 30 at the outer periphery 100B, but this is not limited to this.

[0082] In the light emitting device 1D of this modification, the light shielding portion 15B electrically connected to the extraction electrode 16 provided on each of the plurality of light emitting elements 11 via the openings H1 provided between adjacent light emitting elements 11 is exposed to the outside as an external connection terminal in the outer peripheral portion 100B. Except for this point, the light emitting device 1D has substantially the same configuration as the light emitting device 1 of the first embodiment.

[0083] Even with this configuration, the light emitting device 1D of this modified example can achieve the same effects as the light emitting device 1 of the first embodiment.

[0084] (2-5. Modification 5) Fig. 11 is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1E) according to Modification 5 of the present disclosure. Fig. 12 is a schematic diagram showing an example of a planar configuration of light-emitting device 1E corresponding to region A shown in Fig. 11. Similar to the first embodiment, light-emitting device 1E is suitably applicable to image display devices known as LED displays (for example, electronic viewfinder 1124 of digital still camera 1120).

[0085] In the first embodiment and the like, an example is shown in which the first metal layer 12 is provided in substantially the same shape as the surfaces 11S1 of the plurality of light emitting elements 11, but the present invention is not limited to this.

[0086] In the light emitting device 1E of this modification, the first metal layer 12A extends from the bottom surface (surface 11S1) of the light emitting element 11 to the periphery. As shown in Fig. 12, the first metal layer 12A extends to the pixel array section 100A as a common layer for multiple light emitting elements 11, and an opening 12H is formed so as to avoid the contact portion 16X between the second metal layer 15 and the extraction electrode 16. Except for this point, the light emitting device 1E has substantially the same configuration as the light emitting device 1 of the first embodiment described above.

[0087] The first metal layer 12A may be provided across the entire pixel array section 100A as a common layer for multiple light-emitting elements 11, or the pixel array section 100A may be divided into multiple regions and the first metal layer 12A may be provided in each region.

[0088] In this way, in the light emitting device 1E of this modification, the first metal layer 12A extends from the lower surface (surface 11S1) to the periphery of the light emitting element 11. Even with this configuration, the light emitting device 1E of this modification can achieve the same effects as the light emitting device 1 of the first embodiment.

[0089] 13 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1F) according to Modification 6 of the present disclosure. Similar to the first embodiment, the light-emitting device 1F is suitable for use in image display devices known as LED displays (for example, the electronic viewfinder 1124 of a digital still camera 1120).

[0090] In the above-described first embodiment and the like, an example has been shown in which the light-emitting element 11 is used in which the first conductivity type layer 111 formed of an n-type GaN-based semiconductor material, the active layer 112, and the second conductivity type layer 113 formed of a p-type GaN-based semiconductor material are stacked in this order from the drive substrate 30 side, but the present invention is not limited to this.

[0091] The light emitting device 1F of this modification uses a light emitting element 11A in which a second conductivity type layer 113 formed of a p-type GaN-based semiconductor material, an active layer 112, and a first conductivity type layer 111 formed of an n-type GaN-based semiconductor material are stacked in this order from the drive substrate 30 side. Except for this point, the light emitting device 1F has substantially the same configuration as the light emitting device 1 of the first embodiment described above.

[0092] Even with this configuration, the light emitting device 1F of this modified example can achieve the same effects as the light emitting device 1 of the first embodiment.

[0093] 3. Second Embodiment Fig. 14 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 2) according to a second embodiment of the present disclosure. Fig. 15 is a schematic diagram illustrating an example of a planar configuration of the light-emitting device 2 corresponding to Sec1 shown in Fig. 14. As with the first embodiment, the light-emitting device 2 is suitably applicable to an image display device known as an LED display (e.g., an electronic viewfinder 1124 of a digital still camera 1120).

[0094] The light emitting device 2 includes a light emitting element 11 having a surface 11S1 serving as a light emitting surface and a surface 11S2 opposite to the surface 11S1. The light emitting element 11 has a first conductivity type layer 111, an active layer 112, and a second conductivity type layer 113 stacked in this order from the surface 11S2 side. In the light emitting device 2, a light absorbing layer 42 is provided on the surface 11S2 side of the light emitting element 11, extending below and around the light emitting element 11.

[0095] Here, the light-emitting element 11 corresponds to a specific example of a "light-emitting element" in one embodiment of the present disclosure. The surface 11S1 corresponds to a specific example of a "first surface" in one embodiment of the present disclosure, and the surface 11S2 corresponds to a specific example of a "second surface" in one embodiment of the present disclosure. The first conductivity type layer 111 corresponds to a specific example of a "first conductivity type layer" in one embodiment of the present disclosure, the active layer 112 corresponds to a specific example of an "active layer" in one embodiment of the present disclosure, and the second conductivity type layer 113 corresponds to a specific example of a "second conductivity type layer" in one embodiment of the present disclosure. The light-absorbing layer 42 corresponds to a specific example of a "light-absorbing layer" in one embodiment of the present disclosure.

[0096] [Configuration of Light-Emitting Device] The light-emitting device 2 has a pixel array section 100A in which a plurality of light-emitting elements 11 are arranged in a two-dimensional array, and a peripheral section 100B provided around the pixel array section 100A. The light-emitting device 2 is, for example, configured such that an element substrate 10A in which a plurality of light-emitting elements 11 are arranged in an array, and a wavelength conversion section 20 are stacked in this order on the surface 30S1 side of a drive substrate 30 having an opposing front surface (surface 30S1) and back surface (surface 30S2).

[0097] As described above, the element substrate 10A includes a plurality of light-emitting elements 11 arranged in a two-dimensional array in the pixel array section 100A. The light-emitting elements 11 have a generally regular hexagonal shape and are arranged, for example, in a honeycomb pattern, as shown in FIG. 15 . An electrode layer 114 and an insulating layer 115 are provided on the surface 11S1 of each of the light-emitting elements 11, and insulating layers 116 and 117 and an extraction electrode 16 are provided for each element. A first metal layer 12 and an insulating layer 13 are provided on the surface 11S2 of each of the light-emitting elements 11, in this order. Note that in this embodiment, the first metal layer 12 is simply an electrode layer on the first conductivity-type layer 111 side of the light-emitting elements 11 and may be omitted. An insulating layer 118 is provided on the surface 11S2 of each of the light-emitting elements 11 to planarize the surface facing the drive substrate 30, and includes a light-absorbing layer 42. Further provided on the surface 11S2 side of the plurality of light-emitting elements 11 are a plurality of plugs 14 provided for each element, an insulating layer 17 including a plurality of pad portions 45 and vias, and an insulating layer 18 including a plurality of pad portions 19 that electrically and physically bond the element substrate 10A and the drive substrate 30 together, in this order.

[0098] The light absorption layer 42 prevents light emitted from the light-emitting elements 11 from penetrating into the drive substrate 30 and reduces the occurrence of stray light. For example, the light absorption layer 42 extends over almost the entire surface of the pixel array unit 100A. The light absorption layer 42 has higher light absorption properties than the first metal layer 12 and is formed using, for example, a material with an extinction coefficient of 1.2 or greater for the wavelength of light emitted from the active layer 112 (e.g., a peak wavelength of 365 nm and an emission wavelength ranging from 300 nm to 400 nm). An example of such a material is amorphous silicon. The thickness of the light absorption layer 42 in the Z-axis direction is, for example, 100 nm or greater.

[0099] The light absorbing layer 42 can be formed as follows. For example, as shown in FIG. 5A, the first metal layer 12, the insulating layer 13, and the insulating layer 118 are sequentially formed on the first conductivity type layer 111, and the surface is planarized. Next, a silicon layer is formed on the insulating layer 118, and then annealed at, for example, 200°C. This forms the light absorbing layer 42 made of amorphous silicon. Thereafter, the insulating layer 118 is further formed on the light absorbing layer 42, and the surface is planarized, followed by the same steps as in the first embodiment. This completes the light emitting device 2 shown in FIG. 14.

[0100] [Functions and Effects] In the light emitting device 2 of the present embodiment, a light absorbing layer 42 is provided below and around the plurality of light emitting elements 11 on the surface 11S2 opposite to the surface 11S1 that serves as the light emitting surface of the light emitting elements 11. This prevents the light emitted from the light emitting elements 11 from penetrating into the drive substrate 30 and reduces the generation of stray light.

[0101] As described above, in the light emitting device 2 of this embodiment, it is possible to improve reliability, similarly to the light emitting device 1 of the first embodiment.

[0102] 16 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 2A) according to Modification 7 of the present disclosure. Similar to the first embodiment, light-emitting device 2A is suitable for use in image display devices known as LED displays (for example, electronic viewfinder 1124 of digital still camera 1120).

[0103] In the second embodiment, an example in which the insulating layer 118 is provided between the plurality of light-emitting elements 11 and the light-absorbing layer 42 has been described, but the present invention is not limited to this. In the light-emitting device 2A of this modification, the light-absorbing layer 42 is provided so as to contact the surfaces 11S1 of the plurality of light-emitting elements 11. Except for this point, the light-emitting device 2A has substantially the same configuration as the light-emitting device 2 of the second embodiment.

[0104] In this manner, in the light emitting device 2A of this modified example, the light absorbing layer 42 is provided in contact with the surfaces 11S1 of the plurality of light emitting elements 11. Even with this configuration, the light emitting device 2A of this modified example can achieve the same effects as the light emitting device 2 of the second embodiment.

[0105] (4-2. Modification 8) Fig. 17 is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device (light-emitting device 2B) according to Modification 8 of the present disclosure. Fig. 18 is a schematic diagram showing an example of a planar configuration of light-emitting device 2A corresponding to region A shown in Fig. 17. Similar to the first embodiment, light-emitting device 2B is suitably applicable to image display devices known as LED displays (for example, electronic viewfinder 1124 of digital still camera 1120).

[0106] In the above-described modified example 7, the light absorbing layer 42 extending below and around the plurality of light emitting elements 11 is provided in contact with the surface 11S1 of the light emitting elements 11, but this is not limiting. In the light emitting device 2B of this modified example, the light absorbing layer 42 is provided only on the surface 11S1 of the light emitting elements 11. Except for this point, the light emitting device 2B has substantially the same configuration as the light emitting device 2 of the above-described second embodiment.

[0107] In this way, in the light emitting device 2B of this modified example, the light absorbing layer 42 is provided only on the surface 11S1 of the light emitting element 11. Although the light emitting device 2B of this modified example having such a configuration is inferior to the light emitting device 2 of the second embodiment, it can prevent light from penetrating into the drive substrate 30 and can achieve a certain effect of reducing the generation of stray light.

[0108] 19 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 2C) according to Modification 9 of the present disclosure. Similar to the first embodiment, light-emitting device 2C is suitable for use in image display devices known as LED displays (for example, electronic viewfinder 1124 of digital still camera 1120).

[0109] In the second embodiment, an example in which the light absorbing layer 42 is provided within the insulating layer 118 has been described, but the present invention is not limited to this. In the light emitting device 2C of this modification, the light absorbing layer 42 is provided in the same layer as the wiring layer that forms the multiple pad portions 45. Except for this point, the light emitting device 2C has substantially the same configuration as the light emitting device 2 of the second embodiment.

[0110] In this way, in the light emitting device 2C of this modified example, the light absorbing layer 42 is provided in the same layer as the wiring layer that configures the plurality of pad portions 45. Even with this configuration, the light emitting device 2C of this modified example can achieve the same effects as the light emitting device 2 of the second embodiment.

[0111] 20 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 2D) according to Modification 10 of the present disclosure. Similar to the first embodiment, the light-emitting device 2D is suitable for use in image display devices known as LED displays (for example, the electronic viewfinder 1124 of a digital still camera 1120).

[0112] In the second embodiment, an example in which the light absorbing layer 42 is provided on the element substrate 10A side has been described, but this is not limiting. In the light emitting device 2D of this modified example, the light absorbing layer 42 is provided within the interlayer insulating layer 32 of the drive substrate 30. Except for this point, the light emitting device 2D has substantially the same configuration as the light emitting device 2 of the second embodiment.

[0113] In this way, in the light emitting device 2D of this modified example, the light absorbing layer 42 is provided on the drive substrate 30 side. Even with this configuration, the light emitting device 2D of this modified example can obtain the same effects as the light emitting device 2 of the second embodiment.

[0114] 21 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 2E) according to Modification 11 of the present disclosure. Similar to the first embodiment, the light-emitting device 2E is suitable for use in image display devices known as LED displays (for example, the electronic viewfinder 1124 of a digital still camera 1120).

[0115] In the second embodiment and modified example 10 described above, an example in which one light absorbing layer 42 is provided on either the element substrate 10A side or the drive substrate 30 side has been described, but this is not limiting. In the light emitting device 2E of this modified example, light absorbing layers 42A, 42B are provided on both the element substrate 10A side and the drive substrate 30 side. Except for this point, the light emitting device 2E has substantially the same configuration as the light emitting device 2 of the second embodiment described above.

[0116] In this way, the light emitting device 2E of this modified example is provided with a plurality of light absorbing layers 42 (here, two layers, light absorbing layers 42A and 42B), with the light absorbing layer 42A being provided on the element substrate 10A side and the light absorbing layer 42B being provided on the drive substrate 30 side. Even with this configuration, the light emitting device 2E of this modified example can achieve the same effects as the light emitting device 2 of the second embodiment.

[0117] The positions where the light absorbing layers 42A and 42B are formed are not particularly limited, and both layers may be provided on the element substrate 10A side or the drive substrate 30 side.

[0118] 22 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 2F) according to Modification 12 of the present disclosure. Similar to the first embodiment, the light-emitting device 2F is suitable for use in image display devices known as LED displays (for example, the electronic viewfinder 1124 of a digital still camera 1120).

[0119] In the second embodiment and the like, an example was shown in which the light absorbing layer 42 was provided as a single layer without any steps, but this is not limited to this. In the light emitting device 2F of this modified example, the light absorbing layer 42C is provided at different heights in the XY plane. As an example, for example, a portion of the light absorbing layer 42C (light absorbing layer 42C-1) is provided in the same layer as the pad portion 45, and another portion of the light absorbing layer 42C (light absorbing layer 42C-2) is provided within the insulating layer 118. Except for this point, the light emitting device 2F has substantially the same configuration as the light emitting device 2 of the second embodiment.

[0120] In this way, in the light emitting device 2F of this modified example, the light absorbing layers 42C are provided at different heights in the XY plane. Even with this configuration, the light emitting device 2F of this modified example can achieve the same effects as the light emitting device 2 of the second embodiment.

[0121] 23 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 2G) according to Modification 13 of the present disclosure. Similar to the first embodiment, the light-emitting device 2G is suitable for use in image display devices known as LED displays (for example, the electronic viewfinder 1124 of a digital still camera 1120).

[0122] In the second embodiment and the like, examples have been shown in which the light absorbing layer 42 is formed using amorphous silicon, but this is not limiting. The light emitting device 2G of this modified example has the light absorbing layer 42 (light absorbing layer 42D) formed using black silicon. Except for this point, the light emitting device 2G has substantially the same configuration as the light emitting device 2 of the second embodiment.

[0123] In this way, in the light emitting device 2G of this modified example, black silicon is used to provide the light absorption layer 42 D. Even with this configuration, the light emitting device 2G of this modified example can achieve the same effects as the light emitting device 2 of the second embodiment.

[0124] 24 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 2H) according to Modification 14 of the present disclosure. Similar to the first embodiment, light-emitting device 2H is suitable for use in image display devices known as LED displays (for example, electronic viewfinder 1124 of digital still camera 1120).

[0125] In the above-described second embodiment and the like, an example has been shown in which the light-emitting element 11 is used in which the first conductivity type layer 111 formed of an n-type GaN-based semiconductor material, the active layer 112, and the second conductivity type layer 113 formed of a p-type GaN-based semiconductor material are stacked in this order from the drive substrate 30 side, but the present invention is not limited to this.

[0126] The light emitting device 2H of this modification uses a light emitting element 11B in which a second conductivity type layer 113 formed of a p-type GaN-based semiconductor material, an active layer 112, and a first conductivity type layer 111 formed of an n-type GaN-based semiconductor material are stacked in this order from the drive substrate 30 side. Furthermore, in the light emitting device 2H, the side surface of the light emitting element 11B has an inclined surface that widens toward the light emission side S1. Except for this point, the light emitting device 2H has substantially the same configuration as the light emitting device 2 of the second embodiment described above.

[0127] Even with this configuration, the light emitting device 2H of this modified example can achieve the same effects as the light emitting device 2 of the second embodiment.

[0128] 5. Third Embodiment Fig. 25 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 3) according to a third embodiment of the present disclosure. Fig. 26 is a schematic diagram illustrating an example of a planar configuration of the light-emitting device 3 corresponding to Sec1 shown in Fig. 25. As with the first embodiment, the light-emitting device 3 is suitably applicable to an image display device known as an LED display (for example, the electronic viewfinder 1124 of a digital still camera 1120).

[0129] The light emitting device 3 includes a light emitting element 11 having a surface 11S1 serving as a light emitting surface and a surface 11S2 opposite to the surface 11S1. The light emitting element 11 has a first conductivity type layer 111, an active layer 112, and a second conductivity type layer 113 stacked in this order from the surface 11S2 side. In the light emitting device 3, of the insulating layers 116 and 117A continuous with the side surfaces of the plurality of light emitting elements 11, the insulating layer 117A is formed using a material with a lower impurity concentration than the insulating layer 116.

[0130] Here, the light-emitting element 11 corresponds to a specific example of a "light-emitting element" in one embodiment of the present disclosure. The surface 11S1 corresponds to a specific example of a "first surface" in one embodiment of the present disclosure, and the surface 11S2 corresponds to a specific example of a "second surface" in one embodiment of the present disclosure. The first conductivity type layer 111 corresponds to a specific example of a "first conductivity type layer" in one embodiment of the present disclosure, the active layer 112 corresponds to a specific example of an "active layer" in one embodiment of the present disclosure, and the second conductivity type layer 113 corresponds to a specific example of a "second conductivity type layer" in one embodiment of the present disclosure. The insulating layer 116 corresponds to a specific example of a "first layer" in one embodiment of the present disclosure. The insulating layer 117 corresponds to a specific example of a "second layer" in one embodiment of the present disclosure.

[0131] [Configuration of Light-Emitting Device] The light-emitting device 3 has a pixel array section 100A in which a plurality of light-emitting elements 11 are arranged in a two-dimensional array, and a peripheral section 100B provided around the pixel array section 100A. The light-emitting device 3 is, for example, configured such that an element substrate 10A in which a plurality of light-emitting elements 11 are arranged in an array, and a wavelength conversion section 20 are stacked in this order on the surface 30S1 side of a drive substrate 30 having an opposing front surface (surface 30S1) and back surface (surface 30S2).

[0132] As described above, the element substrate 10A has a plurality of light-emitting elements 11 arranged in a two-dimensional array in the pixel array section 100A. The light-emitting elements 11 have, for example, a substantially circular shape and are arranged in, for example, a honeycomb pattern, as shown in FIG. 26 . An electrode layer 114 and an insulating layer 115 are provided on the surface 11S1 side of the plurality of light-emitting elements 11, and insulating layers 116 and 117A and an extraction electrode 16 are provided for each element. A first metal layer 12 and an insulating layer 13 are provided for each element, in this order, on the surface 11S2 side of the plurality of light-emitting elements 11. An insulating layer 118 is provided on the surface 11S2 side of the plurality of light-emitting elements 11 to planarize the surface facing the drive substrate 30. Further provided on the surface 11S2 side of the plurality of light-emitting elements 11 are a plurality of plugs 14 provided for each element, an insulating layer 17 including a second metal layer 15, etc., and an insulating layer 18 including a plurality of pad portions 19 that electrically and physically bond the element substrate 10 and the drive substrate 30 together, in this order.

[0133] As described above, the insulating layers 116 and 117A are provided continuously on the plurality of light-emitting elements 11. Specifically, the insulating layers 116 and 117A are provided in this order from the insulating layer 115 formed on the surface 11S1 side of the plurality of light-emitting elements 11 arranged in a two-dimensional array so as to cover the side surfaces of each light-emitting element 11 processed into a mesa shape. The insulating layer 116 is made of, for example, aluminum oxide (Al ２ O ３ The insulating layer 117A is an insulating film having an impurity concentration lower than, for example, donor impurities contained in the insulating layer 116, and the difference in impurity concentration between the insulating layer 116 and the insulating layer 116 is 2.5 to 7 times. The insulating layer 117A is made of, for example, aluminum oxide (Al ２ O ３ ) and formed by physical vapor deposition (PVD).

[0134] [Method of Manufacturing Light-Emitting Device] The light-emitting device 3 of this embodiment can be manufactured, for example, as follows: Figures 27A to 27J are schematic diagrams showing an example of a manufacturing process for the light-emitting device 3.

[0135] First, in the same manner as in the first embodiment, an insulating layer 18 having a plurality of pad portions 19 embedded therein is formed, and the surfaces of the insulating layer 18 and the plurality of pad portions 19 are polished by, for example, CMP to flatten the bonding surface with the drive substrate 30. Thereafter, the plurality of pad portions 34 of the drive substrate 30, which have been formed separately, are bonded to the plurality of pad portions 19 by CuCu bonding at, for example, 400° C., and then the support substrate 55 is peeled off as shown in FIG.

[0136] 27B, electrode layer 114 and insulating layer 115 provided on first conductivity type layer 111 are removed, and first conductivity type layer 111 is reactivated. Subsequently, as shown in Fig. 27C, electrode layer 114 is formed again, and then a TEOS film is formed as insulating layer 115A to a thickness of, for example, 300 nm, and then a photoresist film 201 is formed on insulating layer 115A.

[0137] Next, as shown in Fig. 27D, insulating layer 115A is processed. Subsequently, as shown in Fig. 27E, first conductivity type layer 111, active layer 112, and second conductivity type layer 113 are etched using, for example, photolithography technology with insulating layer 115A as a mask, to form a plurality of light-emitting elements 11.

[0138] 27F, an insulating layer 116 having a thickness of, for example, about 10 nm is formed by ALD, extending over the upper surface of insulating layer 115, insulating layer 115, electrode layer 114, and the side surfaces of light-emitting element 11, and insulating layer 17. Subsequently, as shown in FIG. 27G, an insulating layer 117A having a thickness of, for example, 300 nm is further formed by PVD.

[0139] 27H, a photoresist film 202 is formed on insulating layer 117A. Subsequently, as shown in Fig. 27I, for example, dry etching is used to form opening 115H on light emitting element 11 to expose second conductivity type layer 113, and opening H1 is formed in outer peripheral portion 100B to expose second metal layer 15, and photoresist film 202 is then removed.

[0140] 27J, an ITO film is formed by, for example, CVD, and then the ITO film is patterned by, for example, photolithography to form the extraction electrode 16. Thereafter, the wavelength conversion section 20 is formed in the same manner as in the first embodiment. In this manner, the light emitting device 3 is completed.

[0141] Aluminum oxide (Al ２ O ３ The insulating layers 116 and 117A formed using the above-mentioned etchant may be processed using two-stage etching, namely, wet etching and dry etching, as described below, which allows the openings 115H and H1 to be easily formed.

[0142] First, in the same manner as described above, an insulating layer 116 is formed by the ALD method on the upper surface of the insulating layer 115A, the insulating layer 115A, the side surface of the electrode layer 114 and the light-emitting element 11, and the insulating layer 17, and then an insulating layer 117A is further formed by the PVD method.

[0143] Next, as shown in FIG. 28A , a mask 203 is formed on the insulating layer 117A, and then the insulating layers 116 and 117A are processed using wet etching to form openings 151HA and H1A in the insulating layers 116 and 117A that extend over the light-emitting element 11 and to the peripheral portion 100B. Subsequently, as shown in FIG. 28B , the insulating layers 115A and 118 are processed using dry etching. This forms openings 115H and H1 that expose the electrode layer 114 and the second metal layer 15. Thereafter, as shown in FIG. 28C , an ITO film is formed by, for example, CVD, and then the ITO film is patterned using, for example, photolithography to form the extraction electrode 16.

[0144] [Functions and Effects] In the light-emitting device 3 of the present embodiment, a first metal layer 12 is provided on the surface 11S2 opposite to the light-emitting surface (surface 11S1) of the light-emitting element 11, and a second metal layer 15 is provided, for example, with an insulating layer 118 interposed therebetween, extending around and below the light-emitting element 11. As a result, in the pixel array section 100A in which a plurality of light-emitting elements 11 are arranged in a two-dimensional array, a light-shielding structure made up of the first metal layer 12 and the second metal layer 15 is formed, extending without any gaps between the plurality of light-emitting elements 11 and the drive substrate 30 in a plan view. This makes it possible to prevent light emitted from the light-emitting element 11 from penetrating into the drive substrate 30.

[0145] In addition, the side surfaces of micro-LEDs are generally protected by an insulating film such as silicon oxide (SiO). However, the SiO film contains many impurities. The impurities contained in the SiO film diffuse due to thermal load and penetrate into an electrode layer formed using, for example, indium tin oxide (ITO), forming donors. When carriers increase due to the formation of donors, the transparency of ITO decreases, which poses a problem of reducing the emission intensity of a light-emitting device using a micro-LED as a light source.

[0146] In contrast to this, in the present embodiment, of the insulating layers 116 and 117A that are continuous with the side surfaces of the plurality of light-emitting elements 11, the insulating layer 117A is formed using a material with a lower impurity concentration than the insulating layer 116. This reduces the diffusion of impurities into the extraction electrode 16, thereby making it possible to suppress a decrease in the light emission intensity.

[0147] As described above, the light emitting device 3 of this embodiment can have even higher reliability than the first embodiment.

[0148] 6. Fourth Embodiment Fig. 29 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 4) according to a fourth embodiment of the present disclosure. Fig. 30 is a schematic diagram illustrating an example of a planar configuration of light-emitting device 4 corresponding to Sec1 shown in Fig. 29. Similar to the first embodiment, light-emitting device 4 is suitably applicable to an image display device known as an LED display (for example, an electronic viewfinder 1124 of a digital still camera 1120).

[0149] The light emitting device 4 includes a light emitting element 11C having a surface 11S1 serving as a light emitting surface and a surface 11S2 opposite to the surface 11S1. The light emitting element 11C has a buffer layer 119, a first conductivity type layer 111, an active layer 112, and a second conductivity type layer 113 stacked in this order from the surface 11S2 side. In the light emitting device 4, a single-crystal Si layer 46 is provided on the surface 11S2 of the light emitting element 11C.

[0150] Here, the light-emitting element 11C corresponds to a specific example of a "light-emitting element" in one embodiment of the present disclosure. The surface 11S1 corresponds to a specific example of a "first surface" in one embodiment of the present disclosure, and the surface 11S2 corresponds to a specific example of a "second surface" in one embodiment of the present disclosure. The first conductivity type layer 111 corresponds to a specific example of a "first conductivity type layer" in one embodiment of the present disclosure, the active layer 112 corresponds to a specific example of an "active layer" in one embodiment of the present disclosure, and the second conductivity type layer 113 corresponds to a specific example of a "second conductivity type layer" in one embodiment of the present disclosure. The single-crystal Si layer 46 corresponds to a specific example of a "single-crystal silicon layer" in one embodiment of the present disclosure.

[0151] [Configuration of Light-Emitting Device] The light-emitting device 4 has a pixel array section 100A in which a plurality of light-emitting elements 11C are arranged in a two-dimensional array, and a peripheral section 100B provided around the pixel array section 100A. The light-emitting device 4 is, for example, configured such that an element substrate 10A in which a plurality of light-emitting elements 11C are arranged in an array, and a wavelength conversion section 20 are stacked in this order on the surface 30S1 side of a drive substrate 30 having an opposing front surface (surface 30S1) and back surface (surface 30S2).

[0152] As described above, the element substrate 10A includes a plurality of light-emitting elements 11C arranged in a two-dimensional array in the pixel array section 100A. The light-emitting elements 11C have a generally circular shape and are arranged, for example, in a honeycomb pattern, as shown in FIG. 30 . As described above, the light-emitting elements 11C are stacked in this order from the surface 11S2 side, including a buffer layer 119, a first-conductivity-type layer 111, an active layer 112, and a second-conductivity-type layer 113. On the surface 11S1 side of the light-emitting elements 11C, an electrode layer 114 and an insulating layer 115 are provided for each element, and insulating layers 116 and 117 and an extraction electrode 16 are provided, which are continuous with the light-emitting elements 11C. On the surface 11S2 side of the light-emitting elements 11C, a single-crystal Si layer 46 and an insulating layer 13 are provided for each element, in this order. On the surface 11S2 side of the light-emitting elements 11C, an insulating layer 118 is provided to planarize the surface facing the drive substrate 30. Further provided on the surface 11S2 side of the plurality of light-emitting elements 11C are a plurality of plugs 14 provided for each element, a second metal layer 15, an insulating layer 17 including a plurality of pad portions 45 and vias, and an insulating layer 18 including a plurality of pad portions 19 that electrically and physically bond the element substrate 10A and the drive substrate 30 together, in this order.

[0153] The single-crystal Si layer 46 is intended to prevent light emitted from the light-emitting elements 11C from penetrating into the drive substrate 30 and to reduce the occurrence of stray light. The single-crystal Si layer 46 has high light absorption properties and is provided, for example, on each of the surfaces 11S2 of the plurality of light-emitting elements 11C.

[0154] [Method of Manufacturing Light-Emitting Device] The light-emitting device 4 of this embodiment can be manufactured, for example, as follows. Figures 31A to 31M are schematic diagrams showing an example of a manufacturing process for the light-emitting device 4.

[0155] First, as shown in Fig. 31A, for example, a support substrate 52 having a compound semiconductor layer 110, an electrode layer 114, and an insulating layer 115 laminated in this order is bonded to a support substrate 206 made of silicon, with insulating layers 205 and 207 formed on the upper and lower surfaces, via an insulating layer 204. Next, as shown in Fig. 31B, the support substrate 52 is thinned to a thickness of, for example, 5 nm to 100 nm, which is used as a single-crystal Si layer 46. Subsequently, as shown in Fig. 31B, insulating layers 13 and 118 are formed in this order on the single-crystal Si layer 46, and then a second metal layer 15 is further formed.

[0156] 31C, an opening 15H is formed that penetrates the second metal layer 15 and the insulating layer 118. Subsequently, as shown in Fig. 31D, an insulating layer 17 that fills the opening 15H is formed on the second metal layer 15. Next, as shown in Fig. 31E, an opening 17H that reaches the first conductivity type layer 111 and the second metal layer 15 is formed.

[0157] 31F, a metal film is filled in opening 17H to form vias connected to plug 14 and second metal layer 15. Next, as shown in Fig. 31G, a third metal layer 41 that also serves as a pad portion is formed on insulating layer 17, and then insulating layers 17 and 18 are further formed. Next, as shown in Fig. 31H, openings reaching third metal layer 41 are formed in insulating layers 17 and 18, and a metal film is filled in the openings to form a plurality of pad portions 19 filled in insulating layer 18 and vias connecting third metal layer 41 and pad portions 19.

[0158] Next, as shown in Fig. 31I, the plurality of pad portions 34 of the drive substrate 30, which has been separately formed, and the plurality of pad portions 19 are bonded together by CuCu bonding, for example, at 400°C. Subsequently, as shown in Fig. 31J, the support substrate 206 is peeled off. Next, as shown in Fig. 31K, the insulating layers 204 and 205 are removed.

[0159] Next, as shown in FIG. 31L, mesa processing is performed from insulating layer 115 to insulating layer 118, forming light emitting element 11B. Next, as shown in FIG. 31M, insulating layers 116 and 117 are formed. Next, as shown in FIG. 31M, after processing insulating layers 115, 116, and 117, extraction electrode 16 is formed, and extraction electrode 16 is electrically connected to electrode layer 114 and extraction electrode 16 to second metal layer 15, respectively. Thereafter, wavelength conversion section 20 is formed in the same manner as in the first embodiment. With the above steps, light emitting device 4 is completed.

[0160] In the light-emitting device 4 of the present embodiment, the single-crystal Si layer 46 is provided on the surface 11S2 of the light-emitting element 11C, which has the buffer layer 119, the first-conductivity-type layer 111, the active layer 112, and the second-conductivity-type layer 113 stacked in this order from the surface 11S2 side. This prevents light emitted from the light-emitting element 11C from penetrating into the drive substrate 30, and reduces the generation of stray light.

[0161] As a result, the reliability of the light emitting device 4 of this embodiment can be improved.

[0162] 32A to 32C schematically illustrate another example of the manufacturing process for a light-emitting device (light-emitting device 4) according to Modification 15 of the present disclosure. The first conductivity type layer 111 and the plug 14 can be connected, for example, as follows.

[0163] First, as shown in FIG. 32A , a mask 208 is formed on the single-crystal Si layer 46, and then the single-crystal Si layer 46 is processed using wet etching to form an opening 119H. Next, as shown in FIG. 32B , the mask 208 is removed. Subsequently, as shown in FIG. 32C , an insulating layer 13 is filled in the opening 119H, and then insulating layers 118 and 17 are formed in this order. Next, an opening reaching the first conductivity type layer 111 is formed using photolithography, and then a metal film is filled in to form the plug 14. This electrically connects the first conductivity type layer 111 and the plug 14.

[0164] 33A to 33C are schematic diagrams illustrating another example of a manufacturing process for a light-emitting device (light-emitting device 4) according to Modification 16 of the present disclosure. The first conductivity type layer 111 and the plug 14 can be connected, for example, as follows.

[0165] First, as shown in FIG. 33A , a mask 208 is formed on the single-crystal Si layer 46, and then the single-crystal Si layer 46 is processed using wet etching to form an opening 119H. Next, as shown in FIG. 33B , the mask 208 is removed, and amorphous silicon is filled into the opening 119H. Thereafter, the amorphous silicon formed on the buffer layer 119 is removed by, for example, CMP. Next, as shown in FIG. 33C , insulating layers 118 and 17 are formed in sequence on the single-crystal Si layer 46. Next, an opening reaching the first conductivity type layer 111 is formed using photolithography, and then a metal film is filled in to form the plug 14. This electrically connects the first conductivity type layer 111 and the plug 14.

[0166] 34A to 34C are schematic diagrams illustrating another example of a manufacturing process for a light-emitting device (light-emitting device 4) according to Modification 17 of the present disclosure. The first conductivity type layer 111 and the plug 14 can be connected, for example, as follows.

[0167] First, as shown in FIG. 34A , insulating layers 118 and 17 are sequentially formed on single-crystal Si layer 46, and then mask 208 is formed on insulating layer 17. After that, insulating layers 13, 17, and 118 are processed using dry etching to form opening 17H in buffer layer 119. Next, as shown in FIG. 34B , single-crystal Si layer 46 and buffer layer 119 are processed using wet etching to expose first-conductivity-type layer 111. Subsequently, as shown in FIG. 34C , a metal film is embedded in opening 17H to form plug 14. This electrically connects first-conductivity-type layer 111 and plug 14.

[0168] 35A to 35E are schematic diagrams illustrating another example of a manufacturing process for a light-emitting device (light-emitting device 4) according to Modification 18 of the present disclosure. The light-emitting device 4 can be manufactured, for example, as follows.

[0169] First, as in the fourth embodiment, for example, a support substrate 52 having a compound semiconductor layer 110, an electrode layer 114, and an insulating layer 115 laminated in this order is bonded to a support substrate 206 made of silicon, with insulating layers 205 and 207 formed on the upper and lower surfaces, via an insulating layer 204. Then, as shown in Fig. 35A, the support substrate 52 is thinned to a thickness of, for example, 5 nm to 100 nm, which is used as a single-crystal Si layer 46. Next, as shown in Fig. 35B, a mask 209 is formed on the single-crystal Si layer 46. Next, as shown in Fig. 35C, the single-crystal Si layer 46 and the buffer layer 119 are processed.

[0170] Next, in the same manner as in the fourth embodiment described above, an insulating layer 18 having a plurality of pad portions 19 embedded therein is formed as shown in FIG. 35D, and then the plurality of pad portions 34 of a separately formed driving substrate 30 are bonded to the plurality of pad portions 19.

[0171] Next, the support substrate 206 is peeled off, and then the insulating layers 204 and 205 are removed. Subsequently, as shown in FIG. 35E, mesa processing is performed from the insulating layer 115 to the insulating layer 118, forming the light-emitting element 11B. Thereafter, similar to the fourth embodiment, the insulating layers 116 and 117 are formed, and then the extraction electrode 16 is formed, and the extraction electrode 16 is electrically connected to the electrode layer 114 and the second metal layer 15, respectively. Thereafter, the wavelength conversion section 20 is formed. The light-emitting device 4 is thus completed.

[0172] In this way, the single crystal Si layer 46 and the buffer layer 119 may be processed before the mesa processing.

[0173] 36 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 4A) according to Modification 19 of the present disclosure. Similar to the first embodiment, the light-emitting device 4A is suitably applicable to image display devices known as LED displays (for example, the electronic viewfinder 1124 of the digital still camera 1120).

[0174] In the fourth embodiment and the like, the single-crystal Si layer 46 is provided on each of the surfaces 11S2 of the light-emitting elements 11C, but this is not limiting. In the light-emitting device 2A of this modification, the single-crystal Si layer 46 is formed as a common layer for the light-emitting elements 11C, extending from the pixel array section 100A to the outer peripheral section 100B, for example. Except for this point, the light-emitting device 4A has substantially the same configuration as the light-emitting device 4 of the fourth embodiment.

[0175] In this way, in the light emitting device 4A of this modification, a common layer for the plurality of light emitting elements 11C is formed extending from the pixel array section 100A to the outer peripheral section 100B. This makes it possible to better prevent light emitted from the light emitting elements 11 from penetrating into the drive substrate 30 compared to the light emitting device 4 of the fourth embodiment. Therefore, it is possible to further improve reliability compared to the light emitting device 4 of the fourth embodiment.

[0176] 8. Fifth Embodiment Fig. 37 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 5) according to a fifth embodiment of the present disclosure. Fig. 38 is a schematic diagram illustrating an example of a planar configuration of light-emitting device 5 corresponding to Sec1 shown in Fig. 37. Similar to the first embodiment, light-emitting device 5 is suitably applicable to image display devices known as LED displays (e.g., electronic viewfinder 1124 of digital still camera 1120).

[0177] [Configuration of Light-Emitting Device] As described above, the light-emitting device 5 includes a pixel array section 100A in which a plurality of light-emitting elements 11 are arranged in a two-dimensional array, and a peripheral section 100B surrounding the pixel array section 100A. The light-emitting device 5 includes, for example, a drive substrate 30 having a front surface (surface 30S1) and a back surface (surface 30S2) facing each other, on the surface 30S1 side of the drive substrate 30. The light-emitting element 11 includes a first conductivity-type layer 111, an active layer 112, and a second conductivity-type layer 113 stacked in this order from the surface 11S2 side. In the light-emitting device 5, a first metal layer 12 is provided on the surface 11S2 of the light-emitting element 11. Furthermore, a second metal layer 15 is provided below the first metal layer 12, and extends seamlessly below and around the light-emitting element 11 together with the first metal layer 12 in a plan view. In the light-emitting device 5, an extraction electrode 16 electrically connected to the second conductivity-type layer 113 is further provided as a common electrode for the plurality of light-emitting elements 11, for example, over the entire surface of the pixel array section 100A. The extraction electrode 16 extends to a part of the outer periphery 100B and is electrically connected to the second metal layer 15 via an opening H1 that penetrates the insulating layers 116, 117, and 118. In the light-emitting device 5 of the present embodiment, a connection layer 43 is provided on the side and bottom surfaces of the opening H1, which serves as a contact portion 16X between the second metal layer 15 and the extraction electrode 16, as well as around the opening H1. The second metal layer 15 and the extraction electrode 16 are electrically connected via the connection layer 43.

[0178] Here, the light-emitting element 11 corresponds to a specific example of a "light-emitting element" in one embodiment of the present disclosure. The surface 11S1 corresponds to a specific example of a "first surface" in one embodiment of the present disclosure, and the surface 11S2 corresponds to a specific example of a "second surface" in one embodiment of the present disclosure. The first conductivity type layer 111 corresponds to a specific example of a "first conductivity type layer" in one embodiment of the present disclosure, the active layer 112 corresponds to a specific example of an "active layer" in one embodiment of the present disclosure, and the second conductivity type layer 113 corresponds to a specific example of a "second conductivity type layer" in one embodiment of the present disclosure. The first metal layer 12 corresponds to a specific example of a "first metal layer" in one embodiment of the present disclosure, and the second metal layer 15 corresponds to a specific example of a "second metal layer" in one embodiment of the present disclosure. The extraction electrode 16 corresponds to a specific example of a "second electrode layer" in one embodiment of the present disclosure, and the connection layer 43 corresponds to a specific example of a "connection layer" in one embodiment of the present disclosure.

[0179] The connection layer 43 is intended to prevent step disconnection of the extraction electrode 16 within the opening H1, and is formed, for example, using a material having higher coverage than the extraction electrode 16. The connection layer 43 is made of, for example, aluminum (Al), titanium (Ti), or cobalt (Co), which has a lower resistance (resistivity × film thickness) than the extraction electrode 16, and is a CVD film formed by chemical vapor deposition (CVD).

[0180] The contact portion 16X between the second metal layer 15 and the extraction electrode 16 via the connection layer 43 in the opening H1 can be formed as follows.

[0181] 39A, photolithography is used to form an opening H1 that penetrates insulating layers 116, 117, and 118 and reaches second metal layer 15. Next, as shown in FIG. 39B, CVD is used to form connection layer 43 that extends on insulating layer 117 and on the side and bottom surfaces of opening H1.

[0182] 39C, photolithography is used to remove the connection layer 43 formed on the top surface and side surface of the light emitting element 11. Next, as shown in FIG. 39D, an opening 115H is formed through the insulating layers 115, 116, and 117 provided on the surface 11S1 of the light emitting element 11.

[0183] 39E , an ITO film is formed by, for example, the ALD method or the PVD method, and then the ITO film is patterned by, for example, photolithography to form the extraction electrode 16. This forms a contact portion 16X in the opening H1, in which the second metal layer 15 and the extraction electrode 16 are connected via the connection layer 43.

[0184] [Functions and Effects] In the light-emitting device 5 of the present embodiment, a first metal layer 12 is provided on the surface 11S2 opposite to the light-emitting surface (surface 11S1) of the light-emitting element 11, and a second metal layer 15 is provided, for example, with an insulating layer 118 interposed therebetween, extending below and around the light-emitting element 11. As a result, in the pixel array section 100A in which a plurality of light-emitting elements 11 are arranged in a two-dimensional array, a light-shielding structure made up of the first metal layer 12 and the second metal layer 15 is formed extending without any gaps between the plurality of light-emitting elements 11 and the drive substrate 30 in a planar view. This makes it possible to prevent light emitted from the light-emitting element 11 from penetrating into the drive substrate 30.

[0185] Furthermore, in a light-emitting device having a micro LED as a light source, in which a p-type conductivity layer is disposed on the light-emitting surface side, an electrode is formed in an opening having a steeply tapered structure. The insulating film in which the opening is formed is generally configured as a laminated film made of different materials. Therefore, when an opening is formed in the laminated film by wet etching, a portion of the insulating film constituting the laminated film may recede from the other insulating films, resulting in a step on the side of the opening. If an ITO film with low coverage is formed in such an opening with a steep step on the side, there is a risk of the step being disconnected.

[0186] In contrast to this, in the present embodiment, a connection layer 43 having higher coverage than the extraction electrode 16 is provided on the bottom and side surfaces of the opening H1 that penetrates the insulating layers 116, 117, and 118 and connects the extraction electrode 16 electrically connected to the second conductivity type layer 113 and the second metal layer 15. This prevents step disconnection on the side surface of the opening H1.

[0187] As described above, the light emitting device 5 of this embodiment can have even higher reliability than the first embodiment.

[0188] Incidentally, the discontinuity of the ITO film in the opening having a steep step on the side surface can be prevented by forming the ITO film by the ALD method, which has high coverage. In this case, the connection layer 43 can be omitted.

[0189] 9. Sixth Embodiment Fig. 40 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 6) according to a sixth embodiment of the present disclosure. Fig. 41 is a schematic diagram illustrating an example of a planar configuration of light-emitting device 6 corresponding to Sec1 shown in Fig. 40. Similar to the first embodiment, light-emitting device 6 is suitably applicable to an image display device known as an LED display (for example, an electronic viewfinder 1124 of a digital still camera 1120).

[0190] The light-emitting device 1 includes a light-emitting element 11 having a surface 11S1 serving as a light-emitting surface and a surface 11S2 opposite to the surface 11S1. The light-emitting element 11 includes a first-conductivity-type layer 111, an active layer 112, and a second-conductivity-type layer 113 stacked in this order from the surface 11S2 side. In the light-emitting device 1, a first metal layer 12 is provided on the surface 11S2 of the light-emitting element 11. Furthermore, a second metal layer 15 is provided below the first metal layer 12 and extends seamlessly together with the first metal layer 12 beneath and around the light-emitting element 11 in a planar view. The light-emitting device 6 further includes a warpage correction film 47 between the first metal layer 12 and the second metal layer 15, which corrects warpage of at least one of the first metal layer 12 and the second metal layer 15.

[0191] Here, the light-emitting element 11 corresponds to a specific example of a "light-emitting element" in an embodiment of the present disclosure. The surface 11S1 corresponds to a specific example of a "first surface" in an embodiment of the present disclosure, and the surface 11S2 corresponds to a specific example of a "second surface" in an embodiment of the present disclosure. The first conductivity type layer 111 corresponds to a specific example of a "first conductivity type layer" in an embodiment of the present disclosure, the active layer 112 corresponds to a specific example of an "active layer" in an embodiment of the present disclosure, and the second conductivity type layer 113 corresponds to a specific example of a "second conductivity type layer" in an embodiment of the present disclosure. The first metal layer 12 corresponds to a specific example of a "first metal layer" in an embodiment of the present disclosure, and the second metal layer 15 corresponds to a specific example of a "second metal layer" in an embodiment of the present disclosure. The warpage correction film 47 corresponds to a specific example of a "warpage correction film" in an embodiment of the present disclosure.

[0192] [Configuration of Light-Emitting Device] The light-emitting device 6 has a pixel array section 100A in which a plurality of light-emitting elements 11 are arranged in a two-dimensional array, and a peripheral section 100B provided around the pixel array section 100A. The light-emitting device 6 is, for example, configured such that an element substrate 10A in which a plurality of light-emitting elements 11 are arranged in an array, and a wavelength conversion section 20 are stacked in this order on the surface 30S1 side of a drive substrate 30 having an opposing front surface (surface 30S1) and back surface (surface 30S2).

[0193] As described above, the element substrate 10A has a plurality of light-emitting elements 11 arranged in a two-dimensional array in the pixel array section 100A. On the surface 11S1 side of the plurality of light-emitting elements 11, an electrode layer 114 and an insulating layer 115 are provided for each element, and insulating layers 116 and 117 and an extraction electrode 16 are provided, which are continuous with the plurality of light-emitting elements 11. On the surface 11S2 side of the plurality of light-emitting elements 11, for example, a first metal layer 12 and an insulating layer 13 are provided in this order, which are provided for each element. On the surface 11S2 side of the plurality of light-emitting elements 11, a warpage correction film 47 is provided. On the surface 11S2 side of the plurality of light-emitting elements 11, further provided in this order are a plurality of plugs 14 provided for each element, an insulating layer 17 including a plurality of pad portions 45 and vias, and an insulating layer 18 including a plurality of pad portions 19 that electrically and physically bond the element substrate 10A and the drive substrate 30.

[0194] As described above, the warpage correction film 47 corrects the warpage of at least one of the first metal layer 12 and the second metal layer 15. For example, as shown in FIG. 41 , the warpage correction film 47 extends over the entire surface of the pixel array unit 100A. The warpage correction film 47 has a warpage in the opposite direction to the warpage of the first metal layer 12 or the second metal layer 15, whichever has the greater warpage. The warpage correction film 47 is preferably formed using a material that easily achieves a selectivity in dry etching with the first metal layer 12, the second metal layer 15, and the insulating layers (e.g., insulating layers 116, 117, etc.) near the warpage correction film 47. Examples of such materials include silicon nitride (SiN) and silicon carbonitride (SiCN). The SiN film and SiCN film that form the warpage correction film 47 can be deposited, for example, by plasma CVD, and the direction and magnitude of the warpage of the warpage correction film 47 can be controlled by adjusting the wattage during plasma generation.

[0195] [Functions and Effects] In the light-emitting device 6 of the present embodiment, a first metal layer 12 is provided on the surface 11S2 opposite to the light-emitting surface (surface 11S1) of the light-emitting element 11, and a second metal layer 15 is provided, for example, with an insulating layer 118 interposed therebetween, extending below and around the light-emitting element 11. As a result, in the pixel array section 100A in which a plurality of light-emitting elements 11 are arranged in a two-dimensional array, a light-shielding structure made up of the first metal layer 12 and the second metal layer 15 is formed extending without any gaps between the plurality of light-emitting elements 11 and the drive substrate 30 in a planar view. This makes it possible to prevent light emitted from the light-emitting element 11 from penetrating into the drive substrate 30.

[0196] Furthermore, in the light emitting device 6 of the present embodiment, a warpage correction film 47 that corrects warpage of at least one of the first metal layer 12 and the second metal layer 15 is provided between the first metal layer 12 and the second metal layer 15. This improves the processability when flattening the surface of the element substrate 10 on the wavelength conversion section 20 side and the bonding surface with the drive substrate 30.

[0197] As described above, the light emitting device 6 of this embodiment can have even higher reliability than the first embodiment.

[0198] Furthermore, in the light emitting device 6 of this embodiment, a material that can easily achieve a selectivity in dry etching with respect to the first metal layer 12, the second metal layer 15, and the insulating layers (e.g., insulating layers 116, 117, etc.) near the warpage correction film 47 is selected as the material for the warpage correction film 47. This also improves the processability in the dry etching step.

[0199] 42 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 6A) according to Modification 20 of the present disclosure. Similar to the first embodiment, the light-emitting device 6A is suitably applicable to image display devices known as LED displays (for example, the electronic viewfinder 1124 of the digital still camera 1120).

[0200] In the sixth embodiment, an example was shown in which the warpage correction film 47 was provided between the first metal layer 12 and the second metal layer 15 and in contact with the second metal layer 15, but the present invention is not limited to this. In the light emitting device 6A of this modification, an insulating layer 118 is provided between the first metal layer 12 and the second metal layer 15, and a warpage correction film 47A is provided within this insulating layer 118. Except for this point, the light emitting device 6A has substantially the same configuration as the light emitting device 6 of the sixth embodiment.

[0201] As described above, in the light emitting device 6A of this modification, the warpage correction film 47A is provided within the insulating layer 118 provided between the first metal layer 12 and the second metal layer 15. In other words, in the light emitting device 6A of this modification, an insulating film (here, the insulating layer 118) different from the insulating film constituting the warpage correction film 47A is provided between the first metal layer 12 and the warpage correction film 47A and between the second metal layer 15 and the warpage correction film 47A. Even with this configuration, the light emitting device 6A of this modification can obtain the same effects as the light emitting device 6 of the sixth embodiment.

[0202] (10-2. Modification 21) Fig. 43 is a schematic representation of an example cross-sectional configuration of a light-emitting device according to Modification 21 of the present disclosure (light-emitting device 6B). Fig. 44 is a schematic representation of another example cross-sectional configuration of a light-emitting device according to Modification 21 of the present disclosure (light-emitting device 6C). Similar to the first embodiment described above, light-emitting devices 6B and 6C are suitably applicable to image display devices known as LED displays (for example, electronic viewfinder 1124 of digital still camera 1120).

[0203] In the sixth embodiment, an example was shown in which the warpage correction film 47 was provided between the first metal layer 12 and the second metal layer 15, but the position of the warpage correction film 47 is not limited to this. In the light-emitting device 6B of this modified example, a warpage correction film 47B is provided between the first conductivity-type layer 111 and the first metal layer 12. In the light-emitting device 6C of this modified example, a warpage correction film 47C is provided in contact with the surface of the second metal layer 15 facing the drive substrate 30. The warpage correction film 47C may be provided closer to the drive substrate 30, for example, as long as it is in a position that will not be polished when the bonding surface with the drive substrate 30 is planarized by CMP. Except for this point, the light-emitting devices 6B and 6C have substantially the same configuration as the light-emitting device 6 of the sixth embodiment.

[0204] In this way, in the light emitting device 6B of this modified example, a warpage correction film 47B is provided between the first conductivity type layer 111 and the first metal layer 12. In the light emitting device 6C of this modified example, a warpage correction film 47C is provided on the drive substrate 30 side of the second metal layer 15. Even with this configuration, the light emitting devices 6B and 6C of this modified example can achieve the same effects as the light emitting device 6 of the sixth embodiment.

[0205] (10-3. Modification 22) FIG. 45 is a schematic diagram showing an example of the planar configuration of a warpage correction film (warpage correction film 47D) according to Modification 21 of the present disclosure.

[0206] In the sixth embodiment, the warpage correction film 47 extends over the entire surface of the pixel array unit 100A, but the present invention is not limited to this. As shown in FIG. 45 , the warpage correction film 47D of this modification has openings 46H around the plugs 14, each opening 46H being larger than the diameter of the plugs 14.

[0207] In this way, as long as the warpage of the first metal layer 12 and the second metal layer 15 can be sufficiently corrected, the warpage correction film 47 may have an area that is not formed in part of the pixel array unit 100A, like the warpage correction film 47D of this modification. Even with such a configuration, the light emitting device 6D of this modification can obtain the same effects as the light emitting device 6 of the sixth embodiment.

[0208] 49 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7A) according to Modification 23 of the present disclosure. Similar to the first embodiment, the light-emitting device 7A is suitably applicable to image display devices known as LED displays (for example, the electronic viewfinder 1124 of a digital still camera 1120).

[0209] In the light emitting device 7A of this modification, the recess 120 above the surface 11S1, which is the light emitting surface of the light emitting element 11, is filled with the extraction electrode 16, and the surface is flattened. Except for this point, the light emitting device 7A has substantially the same configuration as the light emitting device 1 of the first embodiment.

[0210] In this way, in the light emitting device 7A of this modification, the recess 120 above the surface 11S1, which is the light emitting surface of the light emitting element 11, is filled with the extraction electrode 16 to flatten the surface. This makes it possible to reduce light loss due to interfacial reflection and lateral reflection caused by the recess 120 above the surface 11S1. Therefore, for example, compared to the light emitting device 1 of the first embodiment, it is possible to improve brightness and suppress color mixing.

[0211] 50 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7B) according to Modification 24 of the present disclosure. Similar to the first embodiment, light-emitting device 7B is suitably applicable to image display devices known as LED displays (for example, electronic viewfinder 1124 of digital still camera 1120).

[0212] In the above-described modified example 23, the recess 120 above the surface 11S1 of the light-emitting element 11 is filled with the extraction electrode 16 to flatten the surface, but the present invention is not limited to this. In the light-emitting device 7B of this modified example, the recess 120 above the surface 11S1 of the light-emitting element 11 is filled with an embedding film 161 having a refractive index substantially equal to that of the extraction electrode 16 to flatten the surface. Except for this point, the light-emitting device 7B has substantially the same configuration as the light-emitting device 7A of the above-described modified example 23.

[0213] The embedded film 161 is made of an optically transparent material that has a refractive index lower than that of, for example, the planarizing layer 21 around the recess 120 and substantially the same as that of the extraction electrode 16. Specifically, the embedded film 161 is formed using a material that has a refractive index difference of approximately ±0.3 or less with respect to the refractive index of the extraction electrode 16.

[0214] In this way, in the light emitting device 7B of this modification, the surface is flattened by filling the recess 120 above the surface 11S1, which is the light emitting surface of the light emitting element 11, with a filling film 161 having a refractive index substantially equal to that of the extraction electrode 16. Even with this configuration, the light emitting device 7B of this modification can achieve the same effects as the light emitting device 7A of the modification 23.

[0215] 51 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7C) according to Modification 25 of the present disclosure. Similar to the first embodiment, light-emitting device 7C is suitable for use in image display devices known as LED displays (for example, the electronic viewfinder 1124 of a digital still camera 1120).

[0216] In the above-described modified example 23, the recess 120 above the surface 11S1 of the light-emitting element 11 is filled with the extraction electrode 16 to flatten the surface, but the present invention is not limited to this. In the light-emitting device 7C of this modified example, part of the recess 120 above the surface 11S1 of the light-emitting element 11 is filled with the extraction electrode 16 to reduce the step on the surface. Except for this point, the light-emitting device 7C has substantially the same configuration as the light-emitting device 7A of the above-described modified example 23.

[0217] In this way, in the light-emitting device 7C of this modification, part of the recess 120 above the surface 11S1 of the light-emitting element 11 is filled with the extraction electrode 16, thereby reducing the step on the surface. This reduces light loss due to interface reflection and lateral reflection, although the effect is inferior to that of the light-emitting device 1 of the first embodiment. Therefore, for example, compared to the light-emitting device 1 of the first embodiment, it is possible to improve brightness and suppress color mixing.

[0218] 52 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7D) according to Modification 26 of the present disclosure. Similar to the first embodiment, the light-emitting device 7D is suitable for use in image display devices known as LED displays (for example, the electronic viewfinder 1124 of the digital still camera 1120).

[0219] In the above-described modified example 23, the recess 120 above the surface 11S1 of the light-emitting element 11 is filled with the extraction electrode 16 to flatten the surface, but the present invention is not limited to this. In the light-emitting device 7D of this modified example, the recess 120 above the surface 11S1 of the light-emitting element 11 is filled with the extraction electrode 16, and a lens-shaped light-collecting structure, for example, is provided. Except for this point, the light-emitting device 7D has substantially the same configuration as the light-emitting device 7A of the above-described modified example 23.

[0220] Even with this configuration, the light emitting device 7D of this modification can achieve the same effect as the light emitting device 7A of the above modification 23. Furthermore, in the light emitting device 7D of this modification, a light collecting structure is provided above the surface 11S1, which is the light emitting surface of the light emitting element 11, and this makes it possible to impart directionality to the light emitted from the surface 11S1 of the light emitting element 11. This makes it possible to further suppress color mixing.

[0221] 53 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7E) according to Modification 27 of the present disclosure. Similar to the first embodiment, the light-emitting device 7E is suitable for use in image display devices known as LED displays (for example, the electronic viewfinder 1124 of the digital still camera 1120).

[0222] In the light emitting device 7E of this modification, an intermediate layer 61 is laminated on the extraction electrode 16 extending toward the surface 11S1, which is the light emitting surface of the light emitting element 11, and an intermediate layer 62 is laminated on the insulating layer 116 covering the side surface of the light emitting element 11. Except for this point, the light emitting device 7E has substantially the same configuration as the light emitting device 1 of the first embodiment.

[0223] The intermediate layer 61 is intended to reduce optical loss due to interface reflection between the extraction electrode 16 and the planarization layer 21, and is, for example, stacked directly on the extraction electrode 16. The intermediate layer 61 preferably has a refractive index higher than that of the adjacent planarization layer 21 and lower than that of the extraction electrode 16. For example, if the extraction electrode 16 is formed of ITO (refractive index: approximately 2.1) and the planarization layer 21 is formed of silicon oxide (refractive index: approximately 1.48), the intermediate layer 61 is formed, for example, of aluminum oxide having a refractive index of approximately 1.7. Furthermore, the thickness of the intermediate layer 61 is preferably in the range of λ / 8n or more and 3λ / 8n or less, in which optical loss due to reflection can be reduced, where λ is the vacuum wavelength and n is the refractive index. Specifically, based on evaluation results, the thickness is set to approximately 80 nm.

[0224] The intermediate layer 62 is intended to reduce optical loss due to interface reflection between the light emitting element 11 and the insulating layer 116, and is, for example, laminated directly on the insulating layer 116. The intermediate layer 62 preferably has a refractive index higher than that of the adjacent insulating layer 116. For example, if the insulating layer 116 is formed of aluminum oxide (refractive index: approximately 1.7), the intermediate layer 62 is formed using, for example, ITO (refractive index: approximately 2.1). The film thickness of the intermediate layer 62 is set to, for example, 5 nm or more and 150 nm or less, which is within a range that ensures conductivity and does not cause absorption loss.

[0225] The light emitting device 7E can be manufactured, for example, as follows: Figures 54A to 54E are schematic diagrams showing an example of a manufacturing process for the light emitting device 7E.

[0226] 54A, an insulating layer 18 having a plurality of pad portions 19 embedded therein is formed in the same manner as in the first embodiment, and the surfaces of the insulating layer 18 and the plurality of pad portions 19 are polished by, for example, CMP to flatten the bonding surface with the drive substrate 30. Thereafter, a plurality of pad portions 34 of the drive substrate 30, which have been formed separately, are bonded to the plurality of pad portions 19 by CuCu bonding at, for example, 400° C., and then the support substrate 55 is peeled off as shown in FIG.

[0227] 54B , in the same manner as in the third embodiment, the first conductivity type layer 111, the active layer 112, and the second conductivity type layer 113 are etched using, for example, photolithography to form a plurality of light emitting elements 11. Subsequently, as shown in FIG. 54B , an insulating layer 116, an intermediate layer 62, and an insulating layer 117 are formed in this order, extending on the upper surface of the insulating layer 115, the insulating layer 115, the side surfaces of the electrode layer 114 and the light emitting elements 11, and the insulating layer 118.

[0228] Next, as shown in FIG. 54C, for example, photolithography and etching (e.g., dry etching) are used to form an opening 115H on the light-emitting element 11 to expose the second conductive type layer 113, and an opening H1 is formed in the outer peripheral portion 100B to expose the second metal layer 15.

[0229] Next, as shown in FIG. 54D, an ITO film is formed by, for example, CVD, and then the ITO film is patterned by, for example, photolithography to form the extraction electrode 16 .

[0230] 54E, an intermediate layer 61 is formed by, for example, ALD, and then a planarizing layer 21 is formed. In this way, the light emitting device 7E shown in FIG.

[0231] As described above, in the light-emitting device 7E of this modification, an intermediate layer 61 having a refractive index between that of the extraction electrode 16 and that of the planarization layer 21 is laminated on the extraction electrode 16 extending toward the surface 11S1, which is the light-emitting surface of the light-emitting element 11. Furthermore, in the light-emitting device 7E of this modification, an intermediate layer 62 having a refractive index higher than that of the insulating layer 116 is laminated on the insulating layer 116 covering the side surface of the light-emitting element 11. This reduces light loss due to interface reflection between the extraction electrode 16 and the planarization layer 21 and between the light-emitting element 11 and the insulating layer 116. Therefore, compared to the light-emitting device 1 of the first embodiment, brightness can be improved and color mixing can be suppressed.

[0232] Although the light emitting device 7E shown in FIG. 53 is provided with both intermediate layers 61 and 62, the optical loss can be reduced with only one of them.

[0233] (11-6. Modification 28) Fig. 55 is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7F) according to Modification 28 of the present disclosure. Fig. 56 is a schematic diagram showing an example of a planar configuration of the light-emitting device 7F shown in Fig. 55. As with the first embodiment, the light-emitting device 7F is suitably applicable to image display devices known as LED displays (for example, the electronic viewfinder 1124 of a digital still camera 1120).

[0234] In the light emitting device 7F of this modification, a multilayer reflective film 63 is provided along the side and bottom surfaces of the grooves 21H provided between adjacent light emitting elements 11. Except for this point, the light emitting device 7F has substantially the same configuration as the light emitting device 1 of the first embodiment.

[0235] In the light-emitting device 7F, the extraction electrode 16A extends on the insulating layer 118 that is provided so as to embed the peripheries of the plurality of light-emitting elements 11, and is electrically connected to the second metal layer 15 (specifically, the light-shielding portion 15B) through, for example, the opening H3. The multilayer reflective film 63 is provided between the extraction electrode 16A and the insulating layer 117 that extends along the side surfaces of the plurality of light-emitting elements 11 so as to surround each of the plurality of light-emitting elements 11.

[0236] The multilayer reflective film 63 is for reflecting light emitted laterally. The multilayer reflective film 63 has a configuration in which, for example, two types of layers (a high-refractive index film 631 and a low-refractive index film 632) with different refractive indices are alternately stacked. The high-refractive index film 631 is made of, for example, titanium oxide. The low-refractive index film 632 is made of, for example, silicon oxide.

[0237] The light emitting device 7F can be manufactured, for example, as follows: Figures 57A to 57G are schematic diagrams showing an example of a manufacturing process for the light emitting device 7F.

[0238] First, as shown in Figure 57A, in the same manner as in the third embodiment, the first conductivity type layer 111, the active layer 112 and the second conductivity type layer 113 are etched using, for example, photolithography technology to form a plurality of light-emitting elements 11.

[0239] Next, as shown in FIG. 57B, insulating layers 116 and 117 are formed in this order, extending on the upper surface of insulating layer 115, insulating layer 115, the side surfaces of electrode layer 114 and light emitting element 11, and insulating layer 118.

[0240] Subsequently, as shown in FIG. 57C, a planarizing layer 21 is formed so as to fill the spaces between the plurality of light emitting elements.

[0241] Next, as shown in FIG. 57D, a groove 21H penetrating the planarizing layer 21 is formed between adjacent light emitting elements 11 by using, for example, photolithography and etching.

[0242] 57E , high-refractive-index films 631 and low-refractive-index films 632 are alternately formed using, for example, the ALD method. Next, as shown in FIG. 57E , the high-refractive-index films 631 and low-refractive-index films 632 formed on the planarization layer 21 are removed by, for example, CMP, and the surface is planarized. As a result, a multilayer reflective film 63 in which the high-refractive-index films 631 and the low-refractive-index films 632 are alternately stacked is formed between adjacent light-emitting elements 11.

[0243] Next, as shown in Figure 57F, for example, photolithography and etching (e.g., dry etching) are used to form an opening 115H exposing the second conductive type layer 113 and an opening H3 exposing the second metal layer 15 on the light emitting element 11.

[0244] 57G, an ITO film is formed by, for example, the ALD method, and then the ITO film is patterned by, for example, photolithography to form the extraction electrode 16, followed by forming the planarization layer 21. In this way, the light-emitting device 7F shown in FIG.

[0245] In this way, in the light emitting device 7F of this modified example, the multilayer reflective film 63 is provided along the side and bottom surfaces of the grooves 21H provided between adjacent light emitting elements 11. As a result, light emitted laterally is reflected by, for example, the multilayer reflective film 63 and the second metal layer 15 provided below the light emitting element 11, and is extracted above the light emitting element 11. This makes it possible to improve the light extraction efficiency.

[0246] (11-7. Modification 29) Fig. 58 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7G) according to Modification 29 of the present disclosure. Fig. 59 is a schematic diagram illustrating an example of a planar configuration of the light-emitting device 7G shown in Fig. 58. As with the first embodiment, the light-emitting device 7G is suitably applicable to image display devices known as LED displays (for example, the electronic viewfinder 1124 of a digital still camera 1120).

[0247] In the above-mentioned modified example 28, an example was shown in which a multilayer reflective film 63 was provided along the side and bottom surfaces of the groove 21H provided between adjacent light-emitting elements 11, but this is not limited to this. In the light-emitting device 7G of this modified example, a multilayer reflective film 63 is provided along the side surfaces of the light-emitting element 11. Except for this point, the light-emitting device 7G has substantially the same configuration as the light-emitting device 7F of the above-mentioned modified example 28. Airport

[0248] The multilayer reflective film 63 of this modification can control the reflectance by, for example, changing the film thickness of each of the high-refractive-index film 631 and the low-refractive-index film 632 in accordance with the band gap of the semiconductor material that constitutes the light-emitting element 11. Furthermore, the multilayer reflective film 63 can reflect light of a wide range of incident angles by non-periodically decreasing the film thickness of each of the high-refractive-index film 631 and the low-refractive-index film 632, for example, gradually decreasing the film thickness with increasing distance from the light-emitting element 11.

[0249] Even with this configuration, the light emitting device 7G of this modified example can achieve the same effects as the light emitting device 7F of the above modified example 28.

[0250] 60 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7H) according to Modification 30 of the present disclosure. Similar to the first embodiment, the light-emitting device 7H is suitably applicable to image display devices known as LED displays (for example, the electronic viewfinder 1124 of the digital still camera 1120).

[0251] The light emitting device 7H of this modification further includes a multilayer reflective film 63 below the light emitting element 11. Except for this point, the light emitting device 7H has substantially the same configuration as the light emitting device 7G of the modification 29 described above.

[0252] In this way, the light-emitting device 7H of this modified example has a multilayer reflective film 63 provided not only on the side surface of the light-emitting element 11 but also below it, making it possible to further improve the light extraction efficiency compared to the light-emitting device 7G of modified example 29 above.

[0253] 61 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7I) according to Modification 31 of the present disclosure. Similar to the first embodiment, the light-emitting device 7I is suitably applicable to image display devices known as LED displays (for example, the electronic viewfinder 1124 of the digital still camera 1120).

[0254] The light-emitting device 7I of this modified example is a combination of the above-mentioned modified examples 28 and 29, and has a multilayer reflective film 63A provided between adjacent light-emitting elements 11 and a multilayer reflective film 63B provided along the side of the light-emitting element 11.

[0255] In this way, in the light-emitting device 7I of this modified example, a multilayer reflective film 63A is provided between adjacent light-emitting elements 11, and a multilayer reflective film 63B is provided along the side surfaces of the light-emitting elements 11, thereby improving the light extraction efficiency while making it possible to suppress, for example, color mixing between adjacent pixels.

[0256] (11-10. Modification 32) Fig. 62 is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7J) according to Modification 32 of the present disclosure. Fig. 63 is a schematic diagram showing an example of a planar configuration of light-emitting device 7J shown in Fig. 62. Similar to the first embodiment, light-emitting device 7J is suitably applicable to image display devices known as LED displays (for example, electronic viewfinder 1124 of digital still camera 1120).

[0257] In the light emitting device 7J of this modification, air hole grooves 64 surrounding the light emitting elements 11 are provided in the planarizing layer 21 between adjacent light emitting elements 11, and further, reflective walls 65 are provided outside the air hole grooves 64. Except for this point, the light emitting device 7J has substantially the same configuration as the light emitting device 1D of the above modification 4.

[0258] The air hole grooves 64 are intended to return light emitted laterally toward the light emitting element 11 before it is reflected by the reflecting wall 65. The air hole grooves 64 are provided in the planarization layer 21 provided around the light emitting element 11, surrounding the light emitting element 11 and extending from the surface 11S1 side toward the surface 11S2 side of the light emitting element 11, as shown in FIG. 63, for example. The width of the air hole grooves 64 may be, for example, 10 nm or more. As shown in FIG. 62, for example, the air hole grooves 64 are preferably formed so as to separate adjacent light emitting elements 11, but the bottom surface thereof may be formed above the surface 11S1, which is the light emitting surface of the light emitting element 11.

[0259] The reflective wall 65 is for reflecting light emitted laterally. Like the air hole groove 64, the reflective wall 65 is provided in the planarization layer 21 provided around the light emitting element 11. For example, as shown in FIG. 63 , the reflective wall 65 surrounds the light emitting element 11 outside the air hole groove 64 and extends from the surface 11S1 side toward the surface 11S2 side of the light emitting element 11. The reflective wall 65 is formed by embedding a metal material having high light reflectivity in a groove provided in the planarization layer 21. Examples of such metal materials include aluminum (Al), silver (Ag), tantalum (Ta), titanium (Ti), gold (Ag), platinum (Pt), nickel (Ni), and alloys containing these as main components.

[0260] As described above, in the light emitting device 7J of this modified example, the planarization layer 21 filling the gap between adjacent light emitting elements 11 is provided with a reflective wall 65 formed by embedding a metal film so as to surround the light emitting elements 11, and air hole grooves 64 are provided inside the reflective wall 65. This allows light emitted laterally to be returned to the light emitting element 11 by the air hole grooves 64 before reaching the reflective wall 65. This reduces light loss caused by the light emitted laterally being absorbed by the metal film that constitutes the reflective wall 65. This makes it possible to improve the light extraction efficiency.

[0261] 64 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7K) according to Modification 33 of the present disclosure. Similar to the first embodiment, the light-emitting device 7K is suitable for use in image display devices known as LED displays (for example, the electronic viewfinder 1124 of the digital still camera 1120).

[0262] The light emitting device 7K of this modification has dummy elements 11D that do not contribute to light emission in the image display device between adjacent light emitting elements 11. When the dummy elements 11D are provided between adjacent light emitting elements 11 in this manner, a reflective wall 65 may be provided along the side surface of the dummy elements 11D.

[0263] Even with this configuration, the light emitting device 7K of this modified example can achieve the same effects as the light emitting device 7J of the modified example 32 described above.

[0264] 65 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7L) according to Modification 34 of the present disclosure. Similar to the first embodiment, the light-emitting device 7L is suitably applicable to image display devices known as LED displays (for example, the electronic viewfinder 1124 of the digital still camera 1120).

[0265] In the above-described modification 32, the air hole groove 64 extending from the surface 11S1 side toward the surface 11S2 side of the light-emitting element 11 has a constant width, e.g., a rectangular cross-sectional shape, but is not limited to this. For example, as shown in Fig. 65, the air hole groove 64 may have a wedge-shaped cross-sectional shape that gradually widens from the surface 11S1 side toward the surface 11S2 side of the light-emitting element 11. Alternatively, although not shown, the air hole groove 64 may have a wedge-shaped cross-sectional shape that gradually widens from the surface 11S2 side toward the surface 11S1 side of the light-emitting element 11, which is the opposite of the shape shown in Fig. 65.

[0266] Even with this configuration, the light emitting device 7L of this modified example can achieve the same effects as the light emitting device 7J of the modified example 32 described above.

[0267] (11-13. Modification 35) Fig. 66 is a schematic representation of an example of the planar configuration of a light emitting device according to Modification 34 of the present disclosure. Figs. 67 and 68 are schematic representations of other examples of the planar configuration of a light emitting device according to Modification 34 of the present disclosure.

[0268] In the above-described modification 32, an example was shown in which the air hole groove 64 continuously surrounds the periphery of the light emitting element 11, but the present invention is not limited to this. The air hole groove 64 may be partially divided, for example, as shown in Fig. 66, or may be divided into multiple parts, for example, as shown in Fig. 67. Furthermore, in the above-described modification 32, an example was shown in which the air hole groove 64 surrounds the periphery of the light emitting element 11 in a circular shape, but the present invention is not limited to this. The air hole groove 64 may surround the periphery of the light emitting element 11 in a rectangular shape, for example, as shown in Fig. 68.

[0269] Even with this configuration, the light emitting device of this modification can achieve the same effects as the light emitting device 7J of the modification 32 described above.

[0270] (11-14. Modification 36) Fig. 69 is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7M) according to Modification 36 of the present disclosure. Fig. 70 is a schematic diagram showing an example of a planar configuration of the light-emitting device 7M shown in Fig. 69. As with the first embodiment, the light-emitting device 7M is suitably applicable to image display devices known as LED displays (for example, the electronic viewfinder 1124 of the digital still camera 1120).

[0271] In the light emitting device 7M of this modification, a light guiding section 67 made up of a core layer 67A and a clad layer 67B is provided above the surface 11S1 that serves as the light emitting surface of the light emitting element 11. Except for this point, the light emitting device 7M has substantially the same configuration as the light emitting device 1D of the fourth modification.

[0272] The light guide 67 prevents light emitted from the light-emitting element 11 from leaking into adjacent pixels P and synchronizes the travel time of scattered light. As described above, the light guide 67 is provided above the surface 11S1, which serves as the light-emitting surface of the light-emitting element 11. The light guide 67 includes a cylindrical core layer 67A having approximately the same diameter as the surface 11S1 of the light-emitting element 11, and a cladding layer 67B surrounding the core layer 67A. The core layer 67A may be formed, for example, from silicon oxide (SiO), silicon nitride (SiN), resin, or the like. The core layer 67A may have a refractive index gradient such that the refractive index increases toward the center. The cladding layer 67B is formed from a material with a lower refractive index than the core layer 67A or a metal material with high optical reflectivity, such as aluminum (Al) or silver (Ag). The light guide 67 has a diameter of, for example, 500 nm or more and 3 μm or less. The light guide 67 is embedded, for example, in an insulating layer 66 stacked on the planarization layer 21.

[0273] The light guide portion 67 can be manufactured, for example, as follows: Figures 71A to 71G are schematic diagrams showing an example of a manufacturing process for the light guide portion 67.

[0274] First, as shown in FIG. 71A, an insulating layer 66 is formed on the planarizing layer 21.

[0275] Next, as shown in FIG. 71B, after patterning a mask 210 on the planarizing layer 21, the insulating layer 66 is processed by, for example, dry etching to form an opening 66H.

[0276] Next, as shown in FIG. 71C, a cladding layer 67B is formed along the side and bottom surfaces of the opening 66H.

[0277] Subsequently, as shown in FIG. 71D, the cladding layer 67B formed on the bottom surface of the opening 66H is removed by, for example, etch-back.

[0278] 71E , core layers 671, 672, and 673 are formed in this order along the side and bottom surfaces of opening 66H. Of core layers 671, 672, and 673, core layer 673 has the highest refractive index, core layer 671 has the lowest refractive index, and core layer 672 has a refractive index between core layer 673 and core layer 671.

[0279] Subsequently, as shown in FIG. 71F, a core layer 674 having a higher refractive index than the core layer 673 is deposited to fill the opening 66H.

[0280] 71G, the mask 210 is removed and the surface of the insulating layer 66 is planarized. In this manner, the light guide section 67 shown in FIG.

[0281] In this way, in the light emitting device 7M of this modified example, the light guiding section 67 made up of the core layer 67A and the clad layer 67B is provided above the surface 11S1, which is the light emitting surface of the light emitting element 11. This makes it possible to prevent the light emitted from the light emitting element 11 from leaking into the adjacent pixel P. This makes it possible to prevent color mixing between adjacent pixels.

[0282] Furthermore, in the light emitting device 7M of this modified example, the refractive index of the core layer 67A increases toward the center, so that it is possible to synchronize the travel time of the scattered light incident on the light guiding section 67. This makes it possible to suppress the remaining light.

[0283] 69 shows an example in which the light-guiding portion 67 has a side surface perpendicular to the surface of the planarizing layer 21, but the present invention is not limited to this. The light-guiding portion 67 may have a tapered shape that widens upward from the light-emitting element 11 side.

[0284] 72 is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7N) according to Modification 37 of the present disclosure. Similar to the first embodiment, the light-emitting device 7N is suitable for use in image display devices known as LED displays (for example, the electronic viewfinder 1124 of the digital still camera 1120).

[0285] In the light-emitting device 7N of this modification, an inner lens 68, which is larger than the outer shape of the light-guiding portion, is further provided between the surface 11S1 serving as the light-emitting surface of the light-emitting element 11 and the light-guiding portion 67. Except for this point, the light-emitting device 7N has substantially the same configuration as the light-emitting device 7M of the modification 36 described above.

[0286] In this way, in the light-emitting device 7N of this modified example, the inner lens 68 is provided between the surface 11S1, which is the light-emitting surface of the light-emitting element 11, and the light-guiding section 67. This makes it possible to further suppress light leakage into adjacent pixels P.

[0287] In this modified example, an example is shown in which leakage of light into adjacent pixels P is suppressed by providing an inner lens 68 between the surface 11S1, which is the light emission surface of the light-emitting element 11, and the light-guiding section 67. However, leakage of light into adjacent pixels P can also be further suppressed by, for example, protruding the clad layer 67B into the planarization layer 21.

[0288] (11-16. Modification 38) Fig. 73 is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7O) according to Modification 38 of the present disclosure. Fig. 74 is a schematic diagram showing an example of a planar configuration of the light-emitting device 7O shown in Fig. 73. As with the first embodiment, the light-emitting device 7O is suitably applicable to image display devices known as LED displays (for example, the electronic viewfinder 1124 of the digital still camera 1120).

[0289] The light emitting device 7O of this modification has a hollow structure 69 provided below the light emitting element 11. Except for this point, the light emitting device 7O has substantially the same configuration as the light emitting device 1D of the fourth modification.

[0290] The hollow structure 69 is intended to reflect light emitted downward from the light-emitting element 11. The hollow structure 69 extends below and around the light-emitting element 11, as shown in FIG. 74, for example. The hollow structure 69 may be filled with a gas such as air, or may be a vacuum. Alternatively, the hollow structure 69 may be filled with a liquid, gel, or the like. The hollow structure 69 has a protrusion 29X penetrating the insulating layer 116, as shown in FIG. 73, for example, and the protrusion 29X is provided continuously so as to surround the light-emitting element 11, as shown in FIG. 74, for example.

[0291] Note that the convex portion 29X is not limited to this, and may be provided so as to surround a portion of the periphery of the light-emitting element 11, as shown in Fig. 75A, for example. Furthermore, the convex portion 29X may be divided into multiple portions, as shown in Fig. 75B, for example, or multiple portions may be provided discretely around the light-emitting element, as shown in Figs. 75C to 75E. These convex portions 29X provided around the light-emitting element 11 can refract light emitted laterally toward the light-emitting side S1.

[0292] The hollow structure 69 can be manufactured, for example, as follows: Figures 76A to 76E are schematic diagrams showing an example of a manufacturing process for the hollow structure 69.

[0293] 76A , similarly to the third embodiment, first conductivity type layer 111, active layer 112, and second conductivity type layer 113 are etched using, for example, photolithography to form a plurality of light emitting elements 11. At this time, a sacrificial layer 691 is formed in advance below light emitting elements 11. Next, as shown in FIG. 76A , insulating layers 116 and 117 are formed in order, extending over the upper surface of insulating layer 115, insulating layer 115, electrode layer 114, and the side surfaces of light emitting elements 11, as well as insulating layer 118.

[0294] Next, as shown in FIG. 76B, a mask 211 is patterned on the insulating layer 117 so as to cover the light emitting element 11.

[0295] Subsequently, as shown in FIG. 76C, an opening H5 is formed by, for example, dry etching, penetrating the insulating layers 117 and 116 and reaching the sacrificial layer 691.

[0296] 76D, the sacrificial layer 691 is removed by, for example, dry etching, and then the mask 211 is removed.

[0297] 76E, for example, an insulating layer 117 is deposited again to close the opening H5. As a result, a hollow structure 69 having a protrusion 69X around the light emitting element 11 is formed below the light emitting element 11.

[0298] 76A to 76E show an example in which the hollow structure 69 is formed after bonding the element substrate 10 and the drive substrate 30 together, but the present invention is not limited to this. The hollow structure 69 can also be formed by removing the sacrificial layer 691 before bonding the element substrate 10 and the drive substrate 30 together.

[0299] In this way, in the light-emitting device 7O of this modification, the hollow structure 69 is provided below the light-emitting element 11, so that the light emitted downward from the light-emitting element 11 can be reflected, improving the light extraction efficiency. Therefore, it is possible to reduce the power consumption of the light-emitting device 7O of this modification and an image display device including the same. In addition, it is possible to suppress the temperature rise on the drive substrate 30 side, which further improves reliability.

[0300] 77 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7P) according to Modification 39 of the present disclosure. Similar to the first embodiment, the light-emitting device 7P is suitably applicable to image display devices known as LED displays (for example, the electronic viewfinder 1124 of the digital still camera 1120).

[0301] Although the above-described modification 38 shows an example in which a hollow structure 69 is provided extending from below the light-emitting element 11 to the periphery thereof, the present invention is not limited to this. In the light-emitting device 7P of this modification, a hollow structure 69A is selectively provided only below the light-emitting element 11. Except for this point, the light-emitting device 7P has substantially the same configuration as the light-emitting device 7O of the above-described modification 38.

[0302] The hollow structure 69A can be selectively formed only below the light emitting element 11 by removing the sacrificial layer 691 before bonding the element substrate 10 and the drive substrate 30 together, as described above.

[0303] Even with this configuration, the light emitting device 7P of this modified example can achieve the same effect as the light emitting device 7P of the above modified example 38. Furthermore, in the light emitting device 7P of this modified example, the hollow structure 69A is selectively provided only below the light emitting element 11, which makes it possible to miniaturize the elements compared to the light emitting device 7P of the above modified example 38.

[0304] (11-18. Modification 40) Fig. 78 is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7Q) according to Modification 40 of the present disclosure. Fig. 79 is a schematic diagram showing another example of a cross-sectional configuration of light-emitting device 7Q according to Modification 40 of the present disclosure. Similar to the first embodiment described above, light-emitting device 7Q is suitably applicable to image display devices known as LED displays (for example, electronic viewfinder 1124 of digital still camera 1120, etc.).

[0305] In the above-described modified examples 38 and 39, examples in which a hollow structure 69 is provided below the light-emitting element 11 are shown, but the present invention is not limited to this. In the light-emitting device 7Q of this modified example, a refractive film 70 having a refractive index of, for example, 0.9 or more and 1.45 or less is provided below the light-emitting element 11 instead of the hollow structure 69. Except for this point, the light-emitting device 7Q has substantially the same configuration as the light-emitting device 7O of modified example 38 and the light-emitting device 7P of modified example 39.

[0306] In this way, the light emitting device 7P of this modification is provided with a refractive index of, for example, 0.9 or more and 1.45 or less, and therefore the light extraction efficiency can be further improved compared to the light emitting device 7P of modification 38 and the light emitting device 7P of modification 39. Furthermore, compared to the first embodiment, it is possible to further improve the light blocking performance on the drive substrate 30 side.

[0307] (11-19. Modification 41) Fig. 80 is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device (light-emitting device 7R) according to Modification 41 of the present disclosure. Figs. 81 to 86 are schematic diagrams showing an example of a planar layout of second metal layer 15 in outer peripheral portion 100B of light-emitting device 7R shown in Fig. 80. Similar to the first embodiment, light-emitting device 7R is suitably applicable to image display devices known as LED displays (for example, electronic viewfinder 1124 of digital still camera 1120).

[0308] The light emitting device 7R of this modification uses the second metal layer 15 provided below the light emitting element 11 as a heat dissipation layer. Except for this point, the light emitting device 7R has substantially the same configuration as the light emitting device 1 of the first embodiment.

[0309] As described above, the second metal layer 15 has a plurality of pad portions 15A for electrically connecting each light-emitting element 11 to the drive substrate 30, and light-shielding portions 15B formed around the plurality of pad portions 15A and extending between adjacent plurality of pad portions 15A. In this modification, the light-shielding portions 15B extend to the outer peripheral portion 100B, and a plurality of lead portions 151 are provided in the outer peripheral portion 100B.

[0310] The lead-out portion 151 may be formed in a rectangular shape as shown in Fig. 81 or a circular shape as shown in Fig. 82, or may be formed in a so-called guard ring shape as shown in Fig. 84. Furthermore, a plurality of lead-out portions 151 may be provided at the ends of one pixel row and one pixel column as shown in Fig. 84. Furthermore, the lead-out portion 151 may be provided near the chip end as shown in Fig. 86, or may be provided at a different position such as near the pixel array portion 100A or near the chip end as shown in Fig. 86.

[0311] The light-shielding portion 15B including the lead portion 151 is formed containing, for example, aluminum (Al), copper (Cu), tungsten (W), titanium (Ti), tantalum (Ta), cobalt (Co), ruthenium (Ru), molybdenum (Mo), gold (Au), silver (Ag), diamond, carbon nanotubes, or alloys, oxides, or nitrides thereof. Of the above materials, the light-shielding portion 15B including the lead portion 151 is preferably made of a material having a thermal conductivity equal to or greater than that of titanium (21.9 W / (m·K)).

[0312] In this way, in the light emitting device 7R of this modified example, the heat dissipation layer (second metal layer 15) is provided below the light emitting element 11, which can suppress fluctuations in the characteristics of the drive circuit and malfunctions caused by heat, thereby improving reliability.

[0313] In this modification, the second metal layer 15 is used as a heat dissipation layer, but this is not limiting. For example, in the light-emitting devices 1 to 6 of the first to sixth embodiments, the third metal layer 41 may be used as a heat dissipation layer, or the pad portion 19 may be used as a heat dissipation layer. Furthermore, the heat dissipation layer is not limited to the element substrate 10, and may be provided on the drive substrate 30 side, and for example, the pad portion 34 or any of the wiring layers M1 to M5 may be used. Furthermore, multiple members formed on the above different layers may be used as heat dissipation layers.

[0314] (11-20. Modification 42) Fig. 87 is a schematic diagram showing an example of a planar configuration (A) and cross-sectional configurations (B) and (C) of a light-emitting device (light-emitting device 7S) according to Modification 42 of the present disclosure. Note that Fig. 87(B) shows a cross section corresponding to line II' shown in Fig. 87(A), and Fig. 87(C) shows a cross section corresponding to line II-II' shown in Fig. 87(A). Similar to the first embodiment, the light-emitting device 7S is suitably applicable to image display devices known as LED displays (for example, the electronic viewfinder 1124 of a digital still camera 1120).

[0315] In the light emitting device 7S of this modification, a notch 11X is provided on the side surface of the light emitting element 11. Except for this point, the light emitting device 7S has substantially the same configuration as the light emitting device 1D of the fourth modification described above.

[0316] The cutout portion 11X extends from the surface 11S1, which is the light-emitting surface of the light-emitting element 11, to the side surface of the light-emitting element 11, with the insulating layers 116 and 117 in between, and is intended to prevent a step disconnection of the extraction electrode 16, which is electrically connected to the second metal layer 15 through an opening H1 that penetrates the insulating layers 116, 117, and 118.

[0317] 87 , the cutout portion 11X is formed in a position directly opposite the opening H1 where the extraction electrode 16 and the second metal layer 15 are connected in a plan view. The width W of the cutout portion 11X is preferably, for example, no more than twice the film thickness of the extraction electrode 16 formed on the side surface of the light-emitting element 11 other than the cutout portion 11X. As a result, when the extraction electrode 16 is formed, the extraction electrode 16 does not fit completely into the cutout portion 11X and overlaps it, resulting in a film thickness that is approximately twice the film thickness of the extraction electrode 16 formed on the side surface of the light-emitting element 11 other than the cutout portion 11X.

[0318] Figures 88A to 88H are schematic diagrams showing examples of the planar shape of the cutout portion 11X. In addition to the generally rectangular shape shown in Figure 87A, the cutout portion 11X can have a variety of shapes, such as a triangle, circle, trapezoid, arc, or crescent shape, as shown in Figures 88A to 88E. Furthermore, multiple cutout portions 11X may be provided, as shown in Figures 88F to 88H. The positions of the multiple cutout portions 11X are not particularly limited, and the sizes of the multiple cutout portions 11X may differ from one another.

[0319] 88A to 88E are schematic diagrams showing examples of the shape of the cutout portion 11X in the extension direction. The cutout portion 11X may extend vertically to a side surface of the light-emitting element 11 with a constant width, as shown in FIG. 89A, or may be tapered, as shown in FIG. 89B and FIG. 89C. Alternatively, the cutout portion 11X may extend obliquely to a side surface of the light-emitting element 11, as shown in FIG. 89D, or multiple cutout portions 11X may extend in different directions, as shown in FIG. 89E.

[0320] In this way, in the light emitting device 7S of this modification, it is possible to prevent disconnection of the extraction electrode 16, which extends from the surface 11S1 side of the light emitting element 11, which is the light emitting surface, along the side surface of the light emitting element 11 with the insulating layers 116, 117 in between, and is electrically connected to the second metal layer 15 via the opening H1 that penetrates the insulating layers 116, 117, and 118. Furthermore, compared to the light emitting device 1D of the above modification 4, it is possible to reduce the distance between the light emitting element 11 and the opening H1. This allows for miniaturization of the element.

[0321] 12. Application Examples Application Example 1 Fig. 46A is a front view showing an example of the appearance of a digital still camera (electronic device) 1120. Fig. 46B is a rear view showing an example of the appearance of the digital still camera 1120. The digital still camera 1120 is an interchangeable lens single-lens reflex type. The digital still camera 1120 has an interchangeable taking lens unit (interchangeable lens) 1121 located approximately in the center of the front of a camera main body (camera body) 1122, and a grip part 1123 for the photographer to hold on the left side of the front.

[0322] A monitor 1126 is provided at a position shifted to the left from the center of the back of the camera body 1122. An electronic viewfinder (eyepiece window) 1124 is provided above the monitor 1126. By looking through the electronic viewfinder 1124, the photographer can visually confirm the optical image of the subject guided by the photographing lens unit 1121 and determine the composition. The electronic viewfinder 1124 is equipped with a light-emitting device 1.

[0323] (Application Example 2) The light-emitting device (e.g., the light-emitting device 1) of the present disclosure can also be applied to a head-mounted display (hereinafter referred to as an HMD). The head-mounted display 1130A can be used for virtual reality (VR), augmented reality (AR), mixed reality (MR), substitutional reality (SR), or the like.

[0324] 47A is a perspective view showing the appearance of a head-mounted display (electronic device) 1130A. The head-mounted display 1130A has, for example, ear hooks 1131 on both sides of a glasses-shaped display unit 1132 for wearing on the user's head. The display unit 1132 is equipped with a light-emitting device 1.

[0325] FIG. 47B is a perspective view showing the appearance of another head-mounted display (electronic device). The head-mounted display is smart glasses 1130B that display various information on glasses 1133. The smart glasses 1130B include a main body, an arm 1135, and a lens barrel 1136. The main body 1134 is connected to the arm 1135. The main body 1134 is detachable from the glasses 1133. The main body 1134 incorporates a control board and a display unit for controlling the operation of the smart glasses 1130B. The main body 1134 and the lens barrel 1136 are connected to each other via the arm 1135. The lens barrel 1136 emits image light emitted from the main body 1134 via the arm 1135 toward the lenses 1137 of the glasses 1133. This image light enters the human eye through the lens 1137. 47B, a wearer of the smart glasses 1130B can visually recognize not only the surrounding situation but also various pieces of information emitted from the lens barrel 1136, similar to normal eyeglasses. The main body 1134 includes the light-emitting device 1.

[0326] 48 is a perspective view showing an example of the appearance of a television device (electronic device) 1140. This television device 1140 has, for example, an image display screen unit 1141 including a front panel 1142 and a filter glass 1143. The image display screen unit 1141 is equipped with the light-emitting device 1.

[0327] The present technology has been described above with reference to the first to sixth embodiments, modifications 1 to 42, and application examples, but the present technology is not limited to the above embodiments, etc., and various modifications are possible. For example, in the above embodiments, etc., examples have been shown in which the light emitted from the light-emitting element 11 is blue light or ultraviolet light, but the present technology is not limited to this. For example, the light-emitting device 1 may use a light-emitting element that emits two or more types of light, such as blue light and green light, or ultraviolet light and green light.

[0328] In addition, in the above-described embodiments, the separation portion 11H that separates the compound semiconductor layer 110 into the plurality of light-emitting elements 11 penetrates the compound semiconductor layer 110 from the surface 11S2 side, but this is not limiting. The separation portion 11H may be provided on both the surface 11S1 and the surface 11S2 of the compound semiconductor layer 110. In this case, a gap G is formed in one or both of the separation portions provided on the surface 11S1 side and the surface 11S2 side of the compound semiconductor layer 110. This provides the same effects as those of the above-described embodiments.

[0329] Furthermore, in the above embodiments, each component constituting the light emitting device 1 etc. has been specifically listed and described, but it is not necessary to include all components, and other components may also be included.

[0330] The effects described in this specification are merely examples and are not limited to those described, and other effects may also be obtained.

[0331] The present technology can also be configured as follows. According to the present technology configured as follows, it is possible to improve reliability. (1) A light-emitting device comprising: a light-emitting element having a first surface serving as a light-emitting surface and a second surface opposite to the first surface, and including a first conductivity-type layer, an active layer, and a second conductivity-type layer stacked in this order; a first metal layer provided on the second surface of the light-emitting element; and a second metal layer provided in a layer different from the first metal layer, the second metal layer extending together with the first metal layer below and around the light-emitting element without any gaps in a plan view. (2) The light-emitting device according to (1), further comprising a pixel array section in which a plurality of the light-emitting elements are arranged in a two-dimensional array, and the second metal layer extends without any steps in the pixel array section. (3) The light-emitting device according to (1) or (2), in which the first metal layer and the second metal layer overlap below the light-emitting element in a plan view. (4) The light-emitting device according to any one of (1) to (3), wherein the first conductivity type layer, the active layer, and the second conductivity type layer are stacked in this order from the second surface side, the first metal layer is electrically connected to the first conductivity type layer, and at least a portion of the second metal layer is electrically connected to the second conductivity type layer. (5) The light-emitting device according to (4), wherein the first metal layer also serves as a first electrode layer that applies a voltage to the first conductivity type layer. (6) The light-emitting device according to (4) or (5), further comprising a second electrode layer that is provided on the first surface side of the light-emitting element and applies a voltage to the first conductivity type layer, and the second metal layer is electrically connected to the second conductivity type layer via the second electrode layer. (7) The light-emitting device according to (6), further comprising: a pixel array section in which a plurality of the light-emitting elements are arranged in a two-dimensional array; and an outer peripheral section provided outside the pixel array section, wherein the second metal layer is a common electrode for the plurality of light-emitting elements, is drawn out to the outer peripheral section, and is electrically connected to the second electrode layer.(8) The light-emitting device according to (6) or (7), further comprising: a pixel array section in which a plurality of the light-emitting elements are arranged in a two-dimensional array; and a peripheral section provided outside the pixel array section, wherein the second metal layer is extended to the peripheral section and also serves as an external connection terminal. (9) The light-emitting device according to any one of (1) to (8), wherein the second metal layer is in an electrically floating state. (10) The light-emitting device according to any one of (1) to (9), wherein the first metal layer is formed using a metal material containing aluminum or silver, and the second metal layer is formed using a metal material having a lower reflectivity than at least the first metal layer. (11) The light-emitting device according to any one of (1) to (10), wherein the second metal layer is formed using a material having a higher light absorption rate than the first metal layer for light emitted from the active layer. (12) The light-emitting device according to any one of (1) to (11), wherein the material having a higher light absorption than the first metal layer is amorphous silicon or black silicon. (13) The light-emitting device according to any one of (1) to (12), further comprising an insulating layer provided along the first surface of the light-emitting element and along a side surface between the first surface and the second surface, the insulating layer including a first layer and a second layer formed in this order from the light-emitting element side, the second layer having a lower impurity concentration than the first layer. (14) The light-emitting device according to (13), wherein the difference in impurity concentration between the first layer and the second layer is 2.5 times or more and 7 times or less. (15) The light-emitting device according to (13) or (14), wherein the impurity is a donor impurity. (16) The light-emitting device according to any one of (13) to (15), further comprising a second electrode layer provided on the insulating layer and applying a voltage to the second conductive type layer, the insulating layer having an opening exposing the second conductive type layer of the light-emitting element, the second electrode layer being connected to the second conductive type layer through the opening. (17) The light-emitting device according to any one of (1) to (16), further comprising a single-crystal silicon layer between the second surface of the light-emitting element and the first metal layer.(18) The light-emitting device according to (16) or (17), further comprising a connection layer provided between the second metal layer and the second electrode layer at a connection portion between the second metal layer and the second electrode layer, the connection layer having higher coverage than the second electrode layer. (19) The light-emitting device according to any one of (1) to (18), further comprising: a pixel array section in which a plurality of the light-emitting elements are arranged in a two-dimensional array; and a warpage correction film extending on the pixel array section on the first surface side of the plurality of light-emitting elements, the warpage correction film correcting warpage of at least one of the first metal layer and the second metal layer. (20) The light-emitting device according to (19), wherein the warpage correction film has a warpage in an opposite direction to the warpage of the layer out of the first metal layer and the second metal layer that warps more. (21) The light-emitting device according to (19) or (20), wherein the warpage correction film is formed between the first metal layer and the second metal layer. (22) The light emitting device according to any one of (1) to (21), further comprising: a first substrate including the light emitting element; and a second substrate having a circuit for controlling driving of the light emitting element, wherein the first substrate and the second substrate are connected to each other by hybrid bonding. (23) An image display device comprising: a light emitting device, wherein the light emitting device has a first surface that is a light emitting surface and a second surface opposite to the first surface, and wherein a first conductivity type layer, an active layer, and a second conductivity type layer are stacked in this order, a first metal layer provided on the second surface of the light emitting element, and a second metal layer provided in a layer different from the first metal layer, which extends together with the first metal layer below and around the light emitting element in a planar view without any gaps. (24) A light emitting device comprising: a light emitting element having a first surface that serves as a light emitting surface and a second surface opposite to the first surface, and having a first conductivity type layer, an active layer, and a second conductivity type layer stacked in this order; and a light absorbing layer provided on the second surface side of the light emitting element and extending below and around the light emitting element in a planar view. (25) The light emitting device according to (24), wherein the light absorbing layer is formed using a material having an extinction coefficient of 1.2 or more for the wavelength of light emitted from the active layer.(26) The light-emitting device according to (24) or (25), wherein the material is amorphous silicon or black silicon. (27) The light-emitting device according to any one of (24) to (26), wherein the light absorption layer has a thickness of 100 nm or more. (28) A method for manufacturing a light-emitting device, comprising: forming a light-emitting element having a first surface that is a light-emitting surface and a second surface opposite to the first surface, and having a first conductivity type layer, an active layer, and a second conductivity type layer stacked in this order; depositing a first insulating layer that covers the first surface and side surfaces between the first and second surfaces of the light-emitting element using an atomic layer deposition method; and depositing a second insulating layer on the first insulating layer using a chemical vapor deposition method, the second insulating layer having a lower impurity concentration than the first insulating layer. (29) A light-emitting device comprising: a light-emitting element having a first surface serving as a light-emitting surface and a second surface opposite to the first surface, and having a first conductivity type layer, an active layer, and a second conductivity type layer stacked in this order; and a single-crystal silicon layer provided on the second surface of the light-emitting element. (30) The light-emitting device according to (29), further comprising a plug penetrating the single-crystal silicon layer and applying a voltage to the first conductivity type layer. (31) The light-emitting device according to (29) or (30), further comprising an electrode layer provided on the first surface side of the light-emitting element with the single-crystal silicon layer therebetween, and applying a voltage to the first conductivity type layer. (32) The light-emitting device according to any one of (1) to (31), further comprising a second electrode layer provided on the first surface side of the light-emitting element, and applying a voltage to the first conductivity type layer, the light-emitting element having a recess on the first surface, and at least a portion of the recess being filled with the second electrode layer. (33) The light-emitting device according to any one of (1) to (32), further comprising a second electrode layer provided on the first surface side of the light-emitting element and applying a voltage to the first conductivity type layer, wherein the light-emitting element has a recess on the first surface, and the recess is filled with a material that has approximately the same refractive index as the second electrode layer and is optically transparent.(34) The light emitting device according to any one of (1) to (33), further comprising: a second electrode layer provided on the first surface side of the light emitting element and applying a voltage to the first conductivity type layer, an embedded layer that embeds the periphery of the light emitting element, and a first intermediate layer provided between the second electrode layer and the embedded layer, wherein the first intermediate layer has a refractive index higher than that of the embedded layer and lower than that of the second electrode layer. (35) The light emitting device according to (34), wherein the first intermediate layer has a film thickness in the range of λ / 8n or more and 3λ / 8n or less, where λ is a vacuum wavelength and n is a refractive index. (36) The light emitting device according to any one of (1) to (35), further comprising: a second electrode layer provided on the first surface side of the light emitting element and applying a voltage to the first conductivity type layer, an insulating layer provided along the first surface and a side surface between the first surface and the second surface of the light emitting element, and a second intermediate layer provided between the insulating layer and the second electrode layer extending along the first surface and a side surface between the first surface and the second surface of the light emitting element, wherein the second intermediate layer has a refractive index higher than that of the insulating layer. (37) The light emitting device according to any one of (1) to (36), further comprising: a first multilayer reflective film, wherein the first multilayer reflective film is formed along a side surface and a bottom surface of a groove provided between adjacent light emitting elements. (38) The light emitting device according to any one of (1) to (37), further comprising a second multilayer reflective film, the second multilayer reflective film being provided along the first surface of the light emitting element and a side surface between the first surface and the second surface. (39) The light emitting device according to (38), further comprising a second multilayer reflective film, the second multilayer reflective film being provided along the first surface of the light emitting element and a side surface between the first surface and the second surface. (40) The light emitting device according to any one of (1) to (39), further comprising a third multilayer reflective film, the third multilayer reflective film being further formed on the second surface side of the light emitting element.(41) The light emitting device according to any one of (1) to (40), further comprising: an embedding layer that embeds the periphery of the light emitting element; and an air hole groove provided in the embedding layer and extending from the first surface side toward the second surface side of the light emitting element, wherein the air hole groove surrounds at least a part of the periphery of the light emitting element in a planar view. (42) The light emitting device according to (41), further comprising: a groove that extends from the first surface side toward the second surface side of the light emitting element outside the air hole groove, wherein a metal material having optical reflectivity is embedded in the groove. (43) The light emitting device according to any one of (1) to (42), further comprising a light guiding section, wherein the light guiding section is disposed above the first surface of the light emitting element and includes a cylindrical core layer having substantially the same diameter as the first surface of the light emitting element, and a cladding layer that surrounds the core layer. (44) The light-emitting device according to (43), wherein the refractive index of the core layer increases toward the center. (45) The light-emitting device according to (43) or (44), further comprising an inner lens between the first surface of the light-emitting element and the light-guiding section. (46) The light-emitting device according to any one of (1) to (45), further comprising a hollow structure below the light-emitting element. (47) The light-emitting device according to (46), wherein the hollow structure extends around the periphery of the light-emitting element and has a convex portion protruding toward the light-emitting element. (48) The light-emitting device according to any one of (1) to (47), further comprising a refractive film below the light-emitting element having a refractive index of 0.9 to 1.45. (49) The light-emitting device according to any one of (1) to (48), further comprising a heat-dissipating layer provided below the light-emitting element. (50) The light-emitting device according to (49), further comprising: a pixel array section in which a plurality of the light-emitting elements are arranged in a two-dimensional array; and a peripheral section provided outside the pixel array section, wherein the heat dissipation layer extends from the pixel array section to the peripheral section.(51) The light-emitting device according to (49) or (50), wherein the heat dissipation layer is formed containing aluminum, copper, tungsten, titanium, tantalum, cobalt, ruthenium, molybdenum, gold, silver, diamond, or carbon nanotubes, or an alloy, oxide, or nitride thereof. (52) The light-emitting device according to any one of (1) to (51), further comprising a second electrode layer provided on the first surface side of the light-emitting element and applying a voltage to the first conductivity type layer, wherein the light-emitting element has a notch portion extending to a side surface between the first surface and the second surface. (53) The light-emitting device according to (52), wherein the notch portion has a width equal to or less than twice the film thickness of the second electrode layer. (54) A light-emitting device comprising: a light-emitting element having a first surface that serves as a light-emitting surface and a second surface opposite to the first surface, and having a first conductivity type layer, an active layer, and a second conductivity type layer stacked in this order; a first metal layer provided on the second surface of the light-emitting element; a second metal layer provided in a layer different from the first metal layer, extending together with the first metal layer below and around the light-emitting element without any gaps in a planar view; an electrode layer provided on the first surface side of the light-emitting element, applying a voltage to the first conductivity type layer and electrically connected to a second electrode layer; and a connection layer provided between the second metal layer and the electrode layer at a connection portion between the second metal layer and the electrode layer, and having higher coverage than the second electrode layer.

[0332] This application claims priority based on Japanese Patent Application No. 2024-051038, filed on March 27, 2024, in the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0333] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur depending on design requirements and other factors, and are intended to be within the scope of the appended claims and their equivalents.

Claims

1. A light emitting device comprising: a light emitting element having a first surface that serves as a light emitting surface and a second surface opposite to the first surface, and having a first conductivity type layer, an active layer, and a second conductivity type layer stacked in this order; a first metal layer provided on the second surface of the light emitting element; and a second metal layer provided on a layer different from the first metal layer, which extends together with the first metal layer below and around the light emitting element without any gaps in a plan view.

2. The light-emitting device according to claim 1, further comprising a pixel array section in which a plurality of said light-emitting elements are arranged in a two-dimensional array, and said second metal layer extends without steps into said pixel array section.

3. The light emitting device according to claim 1, wherein, in a plan view, the first metal layer and the second metal layer overlap below the light emitting element.

4. The light-emitting device according to claim 1, further comprising: a second electrode layer provided on the first surface side of the light-emitting element and applying a voltage to the first conductivity type layer; a pixel array section in which a plurality of the light-emitting elements are arranged in a two-dimensional array; and a peripheral section provided outside the pixel array section, wherein the second metal layer is electrically connected to the second conductivity type layer via the second electrode layer, is a common electrode for a plurality of the light-emitting elements, and is drawn out to the peripheral section and electrically connected to the second electrode layer.

5. The light-emitting device according to claim 1, further comprising: a second electrode layer provided on the first surface side of the light-emitting element and applying a voltage to the first conductivity type layer; a pixel array section in which a plurality of the light-emitting elements are arranged in a two-dimensional array; and a peripheral section provided outside the pixel array section, wherein the second metal layer is electrically connected to the second conductivity type layer via the second electrode layer and is drawn out to the peripheral section to also serve as an external connection terminal.

6. The light emitting device of claim 1, wherein said second metal layer is electrically floating.

7. The light-emitting device according to claim 1, wherein the first metal layer is formed using a metal material containing aluminum or silver, and the second metal layer is formed using a metal material having a reflectivity lower than that of at least the first metal layer.

8. The light emitting device according to claim 1, wherein the second metal layer is formed using a material that has a higher light absorption property for the light emitted from the active layer than the first metal layer.

9. The light emitting device of claim 1, wherein the material having a higher light absorption than the first metal layer is amorphous silicon or black silicon.

10. The light-emitting device according to claim 1, further comprising an insulating layer provided along the first surface of the light-emitting element and along a side surface between the first surface and the second surface, the insulating layer including a first layer and a second layer formed in that order from the light-emitting element side, the second layer having a lower impurity concentration than the first layer.

11. The light emitting device according to claim 10, wherein the difference in concentration of the impurity between the first layer and the second layer is 2.5 times or more and 7 times or less.

12. The light emitting device of claim 1, further comprising a monocrystalline silicon layer between said second surface of said light emitting element and said first metal layer.

13. The light-emitting device according to claim 1, further comprising a second electrode layer provided on the first surface side of the light-emitting element and applying a voltage to the first conductivity type layer, and a connection layer provided between the second metal layer and the second electrode layer at the connection between the second metal layer and the second electrode layer and having higher coverage than the second electrode layer.

14. The light-emitting device according to claim 1, further comprising: a pixel array section in which a plurality of said light-emitting elements are arranged in a two-dimensional array; and a warpage correction film extending over said pixel array section on the first surface side of said plurality of light-emitting elements, for correcting warpage of at least one of said first metal layer and said second metal layer.

15. The light-emitting device according to claim 1, further comprising a second electrode layer provided on the first surface side of the light-emitting element and applying a voltage to the first conductivity type layer, the light-emitting element having a recess on the first surface, and at least a portion of the recess being filled with the second electrode layer or a material having substantially the same refractive index as the second electrode layer and being optically transparent.

16. The light-emitting device according to claim 1, further comprising: a second electrode layer provided on the first surface side of the light-emitting element and applying a voltage to the first conductivity type layer; a buried layer that buries the periphery of the light-emitting element; and a first intermediate layer provided between the second electrode layer and the buried layer, wherein the first intermediate layer has a refractive index higher than that of the buried layer and lower than that of the second electrode layer, and has a film thickness in the range of λ / 8n or more and 3λ / 8n or less, where λ is the vacuum wavelength and n is the refractive index.

17. The light-emitting device described in claim 1, further comprising: a second electrode layer provided on the first surface side of the light-emitting element and applying a voltage to the first conductivity type layer; an insulating layer provided along the first surface of the light-emitting element and along side surfaces between the first surface and the second surface; and a second intermediate layer provided between the insulating layer and the second electrode layer extending along the first surface of the light-emitting element and along side surfaces between the first surface and the second surface, wherein the second intermediate layer has a refractive index higher than that of the insulating layer.

18. The light emitting device according to claim 1, further comprising a first multilayer reflective film, the first multilayer reflective film being formed along the side and bottom surfaces of grooves provided between adjacent ones of the plurality of light emitting elements.

19. The light-emitting device according to claim 1, further comprising a second multilayer reflective film, the second multilayer reflective film being provided along the first surface of the light-emitting element and along a side surface between the first surface and the second surface, and consisting of a plurality of layers, the thickness of each of the plurality of layers gradually decreasing with increasing distance from the light-emitting element.

20. The light emitting device according to claim 1, further comprising a third multilayer reflective film, said third multilayer reflective film being further formed on said second surface side of said light emitting element.

21. The light-emitting device according to claim 1, further comprising: a buried layer that buries the periphery of the light-emitting element; and a void groove provided in the buried layer and extending from the first surface side of the light-emitting element toward the second surface side, wherein the void groove surrounds at least a portion of the periphery of the light-emitting element in a planar view.

22. The light-emitting device according to claim 1, further comprising a light-guiding section, the light-guiding section being disposed above the first surface of the light-emitting element and including a cylindrical core layer having substantially the same diameter as the first surface of the light-emitting element, and a clad layer surrounding the core layer, the refractive index of the core layer increasing toward the center.

23. The light emitting device according to claim 1, further comprising a hollow structure below the light emitting element.

24. The light-emitting device according to claim 1, further comprising: a pixel array section in which a plurality of the light-emitting elements are arranged in a two-dimensional array; a peripheral section provided outside the pixel array section; and a heat dissipation layer provided below the light-emitting elements, the heat dissipation layer extending from the pixel array section to the peripheral section.

25. The light-emitting device according to claim 1, further comprising a second electrode layer provided on the first surface side of the light-emitting element and applying a voltage to the first conductivity type layer, and the light-emitting element has a notch extending to a side surface between the first surface and the second surface.

26. An image display device comprising: a light-emitting device, wherein the light-emitting device has a first surface that serves as a light-emitting surface and a second surface opposite to the first surface, and wherein a first conductivity type layer, an active layer, and a second conductivity type layer are laminated in this order; a first metal layer provided on the second surface of the light-emitting device; and a second metal layer provided in a layer different from the first metal layer, which extends together with the first metal layer below and around the light-emitting device without any gaps in a plan view.

Images