Chemical vapor deposition apparatus

Abstract

The present invention relates to a chemical vapor deposition apparatus and, more specifically, to a chemical vapor deposition apparatus capable of preventing foreign substances such as powder from being attached to the inside of an exhaust pipe because of exhaust gas exhausted from a processing space for a substrate.

Description

chemical vapor deposition device

[0001] The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus capable of preventing foreign substances such as powder from being attached to the inside of an exhaust pipe due to exhaust gas exhausted from a processing space for a substrate.

[0002] Typically, a chemical vapor deposition device provides a processing space for a substrate inside a chamber, and performs various processes on the substrate in the processing space.

[0003] In this case, the process gas is heated before entering the treatment space to maintain a temperature higher than the process temperature in the treatment space, and is exhausted from the treatment space through a gas pipe.

[0004] However, in the case of a chemical vapor deposition device according to the prior art, the temperature of the process gas exhausted through the gas exhaust pipe can be maintained in a state where it does not drop significantly from the process temperature, or in a temperature range similar to the process temperature.

[0005] In this case, the internal temperature of the gas exhaust pipe may remain above the reaction temperature of the process gas. Therefore, decomposition reactions of the process gas may also occur inside the gas exhaust pipe, causing foreign substances such as powder to adhere to the inside of the gas exhaust pipe. This reduces the exhaust efficiency of the gas exhaust pipe and can further affect the process on the substrate.

[0006] In order to solve the above-mentioned problems, the present invention aims to provide a chemical vapor deposition apparatus having a cooling gas supply unit capable of supplying cooling gas to a gas exhaust pipe through which gas is exhausted in a processing space for a substrate.

[0007] The above object of the present invention can be achieved by a chemical vapor deposition apparatus characterized by comprising a chamber providing a processing space for a substrate, a gas exhaust pipe connected to the processing space and through which gas in the processing space is exhausted to the outside of the chamber, and a cooling gas supply unit connected to the gas exhaust pipe and supplying cooling gas to the gas exhaust pipe.

[0008] Here, a lower plate provided inside the chamber and on which the substrate is mounted, and an upper cover provided on the upper portion of the lower plate and providing a processing space for the substrate between the lower plate and the chamber may be further provided.

[0009] In addition, the cooling gas supply unit may be provided with a cooling gas supply path that is connected to the gas exhaust pipe and supplies the cooling gas to the inside of the gas exhaust pipe.

[0010] Meanwhile, the cooling gas supply path can be connected to the gas exhaust pipe adjacent to the processing space.

[0011] Furthermore, the cooling gas supply path can be connected to the lower part of the gas exhaust pipe.

[0012] Meanwhile, the cooling gas supply unit can lower the temperature of the gas exhaust pipe below the reaction temperature of the process gas.

[0013] Additionally, the cooling gas supply unit can supply hydrogen as a cooling gas.

[0014] According to the present invention having the above-described configuration, by supplying cooling gas to a gas exhaust pipe through which gas is exhausted in a processing space for a substrate, the internal temperature of the gas exhaust pipe is lowered to below the reaction temperature of the process gas, thereby preventing foreign substances such as powder from being attached inside the gas exhaust pipe.

[0015] FIG. 1 is a side cross-sectional view showing the internal configuration of a chemical vapor deposition apparatus according to one embodiment of the present invention;

[0016] Figure 2 is a plan view of the lower plate and the gas exhaust pipe, and is a drawing showing the cooling gas supply hole formed in the gas exhaust pipe.

[0017] Figure 3 is a graph showing the temperature change inside the processing space and gas exhaust pipe in a chemical vapor deposition device according to the prior art.

[0018] Figure 4 is a graph showing temperature changes inside a processing space and a gas exhaust pipe in a chemical vapor deposition apparatus according to the present invention.

[0019] Hereinafter, the structure of a chemical vapor deposition apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings.

[0020] FIG. 1 is a cross-sectional side view illustrating the internal configuration of a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention.

[0021] Referring to FIG. 1, the chemical vapor deposition device (1000) may be equipped with a chamber (100). Various components may be provided in the chamber (100).

[0022] A receiving space (110) in which various components are provided may be provided inside the chamber (100).

[0023] Additionally, a gas supply unit (200) may be connected to one side of the chamber (100). The gas supply unit (200) may serve to supply various process gases and purge gases toward the processing space (312).

[0024] The above gas supply unit (200) may be provided with a gas inlet pipe (220) that extends from the outside of the chamber (100) to the inside of the chamber (100) and is connected to the processing space (312). A supply port (210) through which gas is supplied may be formed in the gas inlet pipe (220) located outside the chamber (100).

[0025] Meanwhile, an inner chamber (300) may be provided inside the chamber (100), and a processing space (312) for the substrate (W) may be provided inside the inner chamber (300). By adopting a so-called dual chamber structure in this way, the possibility of particle contamination of the substrate (W) can be reduced, and the process for the substrate (W) can be performed more smoothly.

[0026] In addition, the inner chamber (300) may function as a heat-blocking member. That is, the inner chamber (300) is arranged to surround the susceptor assembly (330) described below, and may be composed of carbon felt, graphite felt, or the like. Alternatively, the inner chamber (300) may be composed of graphite-coated carbon felt or carbon-coated graphite felt, or the like.

[0027] In this way, when the inner chamber (300) or the heat blocking member is provided, the heat from the heater (340) of the susceptor assembly (330) is not radiated to the outside of the inner chamber (300), so that the processing space (312) can be heated more effectively.

[0028] Specifically, the inner chamber (300) may be provided with a susceptor (328) on which the substrate (W) is mounted or on which the substrate (W) is loaded, a susceptor assembly (330) for heating the substrate (W), and an upper cover (310) provided on the upper side of the susceptor assembly (330) inside the inner chamber (300) to provide a processing space between the susceptor assembly (330) and the substrate (W) for processing.

[0029] In addition, the susceptor assembly (330) may be provided with a lower plate (320). The lower plate (320) may be provided with a body portion (322) in which a concave portion (326) is formed into which the substrate (W) is inserted or into which the susceptor (328) on which the substrate (W) is mounted is inserted, and a protrusion (324) protruding downward from the body portion (322). Furthermore, the susceptor assembly (330) may be provided with a heater (340) that heats the lower plate (320).

[0030] Accordingly, a processing space (312) for processing the substrate (W) is formed between the lower plate (320) and the upper cover (310).

[0031] The chemical vapor deposition apparatus (1000) according to the present invention may correspond to, for example, an apparatus for depositing a silicon carbide (SiC) film on the surface of the substrate (W), but is not limited thereto and may also be used as an apparatus for depositing a silicon-based thin film. The chemical vapor deposition apparatus (1000) supplies a process gas or the like from the side of the processing space (312) by the gas supply unit (200) to induce a laminar flow of gas within the processing space (312) to grow a necessary film on the upper surface of the substrate (W).

[0032] One side of the inner chamber (300) is connected to the gas inlet pipe (220), so that process gas, etc. can be supplied through the gas inlet pipe (350).

[0033] In this case, the inner chamber (300) may be equipped with a heater (340) for heating the substrate (W) and the processing space (312) to a process temperature. The heater (340) may be equipped at the lower portion of the lower plate (320) and may be configured as an induction heating coil. Since the induction heating coil can be used semi-permanently after installation, it has advantages in terms of maintenance and equipment operation costs.

[0034] Meanwhile, as described above, when a silicon carbide (SiC) film is deposited on the upper surface of the substrate (W), the process temperature corresponds to a high temperature of approximately 1600 degrees Celsius or higher, and in this case, the temperature (reaction temperature) at which the process gas reacts and decomposes may correspond to approximately 800 to 1600 degrees Celsius.

[0035] In addition, when depositing a silicon series film on the upper surface of the substrate (W), the temperature (reaction temperature) at which the process gas reacts and decomposes may be approximately 1100 to 1300 degrees Celsius.

[0036] Accordingly, the upper cover (310) and the lower plate (320) constituting the processing space (312) can efficiently heat the substrate and reduce power consumption by increasing thermal stability and thermal conductivity by using graphite, silicon carbide coated graphite (SiC Coated Graphite), TaC coated graphite (Tac Coated Graphite), or silicon carbide material using a CVD sintering method.

[0037] Additionally, a gas exhaust pipe (400) through which gas from the processing space (312) is exhausted may be connected to the other side of the inner chamber (300). The gas exhaust pipe (400) may extend to the outside of the chamber (100) to exhaust gas from the processing space (312) to the outside of the chamber (100).

[0038] Meanwhile, the lower plate (320) may have a body portion (322) and a protrusion (324) formed by protruding downward from the body portion (322).

[0039] A concave portion (326) is formed on the upper surface of the body portion (322), and a susceptor (328) on which the substrate (W) or the substrate (W) is mounted may be provided in the concave portion (326).

[0040] Meanwhile, when the substrate (W) or the susceptor (328) is inserted into the concave portion (326), the substrate (W) or the susceptor (328) may be rotatably provided on the lower plate (320).

[0041] That is, a gas passage (350) is further provided that penetrates the protrusion (324) or the body part (322) and is connected to the concave part (326), and a floating gas or the like is supplied toward the lower surface of the substrate (W) or the susceptor (328) through the gas passage (350) to rotate the substrate (W) or the susceptor (328).

[0042] During the process for the above substrate (W), the substrate (W) can be rotated so that the process gas supplied from the side reacts uniformly on the entire surface of the substrate (W).

[0043] For example, the gas path (350) may pass through the protrusion (324) and be connected from the lower portion of the protrusion (324) to the upper portion of the recess (326). In this case, the gas path (350) may be branched into a plurality of paths and connected to the recess (326).

[0044] Accordingly, the floating gas supplied from the floating gas storage unit (not shown) can be injected into the concave portion (326) through the gas passage (350) to rotate the substrate (W) or the susceptor (328). In this case, the gas passage (350) can be connected at a predetermined angle with respect to the concave portion (326). Accordingly, the substrate (W) or the susceptor (328) can be rotated by the floating gas injected through the gas passage (350).

[0045] Meanwhile, FIG. 3 is a graph showing temperature changes inside the processing space (312) and gas exhaust pipe (400) in a chemical vapor deposition device according to the prior art.

[0046] In Fig. 3, the vertical axis represents temperature, and the vertical axis represents distance according to the flow of process gas, etc. For example, in the horizontal axis of Fig. 3, 'A1' corresponds to the front end of the concave portion (326) where the substrate (W) or susceptor (328) is seated, and 'A2' corresponds to the rear end of the concave portion (326). Therefore, in Fig. 3, the area between 'A1' and 'A2' corresponds to the concave portion (326), and illustrates the processing space (312) where the substrate (W) is located. In addition, in Fig. 3, 'A3' corresponds to the front end of the gas exhaust pipe (400), and the area after 'A3' corresponds to the gas exhaust pipe (400).

[0047] Referring to Fig. 3, the process gas is heated by the heater (340) before flowing between 'A1' and 'A2' and rises from the initial temperature (T0). In this case, the process gas is heated to the process temperature (T) between 'A1' and 'A2' (or the processing space (312)). P ) is maintained. As a result, a process for the substrate (W) can be performed in the processing space (312).

[0048] Next, the process gas, etc., is exhausted through the gas exhaust pipe (400). However, as shown in Fig. 3, the temperature of the process gas exhausted through the gas exhaust pipe (400) can be maintained in a state that does not drop significantly from the process temperature described above, or in a temperature range similar to the process temperature, even within the interior (area A) of the gas exhaust pipe (400).

[0049] In this case, the internal temperature of the gas exhaust pipe (400) may still be maintained above the reaction temperature of the process gas. Accordingly, a decomposition reaction of the process gas may also occur inside the gas exhaust pipe (400), and as a result, foreign substances such as powder may adhere to the inside of the gas exhaust pipe (400). This may reduce the exhaust efficiency of the gas exhaust pipe (400) and further affect the process for the substrate (W).

[0050] In order to solve this problem, the present invention provides a cooling gas supply unit (500) that can lower the internal temperature of the gas exhaust pipe (400) below the reaction temperature of the process gas.

[0051] FIG. 2 is a plan view illustrating the lower plate (320) and gas exhaust pipe (400) in the chemical vapor deposition apparatus (1000) according to the present invention.

[0052] Referring to FIGS. 1 and 2, the chemical vapor deposition device (1000) may be equipped with a cooling gas supply unit (500) that is connected to the gas exhaust pipe (400) and supplies cooling gas to the gas exhaust pipe (400).

[0053] The above cooling gas supply unit (500) may be provided with, for example, a cooling gas storage tank (510), and a cooling gas supply path (520) that is connected to the cooling gas storage tank (510) and the gas exhaust pipe (400) and supplies the cooling gas to the inside of the gas exhaust pipe (400). In this case, a pump (not shown) for pumping and supplying the cooling gas may be provided on the cooling gas supply path (520).

[0054] In this embodiment, hydrogen (H2) is used as a cooling gas, but it is not limited thereto, and the cooling gas may be appropriately changed.

[0055] Meanwhile, the cooling gas supply path (520) can be connected to the gas exhaust pipe (400) adjacent to the processing space (312).

[0056] For example, if the cooling gas supply path (520) is connected to the rear end of the gas exhaust pipe (400), the effect of lowering the internal temperature of the gas exhaust pipe (400) may be very low.

[0057] Conversely, if the cooling gas supply path (520) is positioned in close contact with the rear end of the processing space (312) in the gas exhaust pipe (400), the cooling gas supplied through the cooling gas supply path (520) may affect the process temperature of the processing space (312).

[0058] Accordingly, the cooling gas supply path (520) is connected to the gas exhaust pipe (400) adjacent to the processing space (312), and at the same time, the cooling gas supply path (520) can be connected to the gas exhaust pipe (400) at an installation distance (D) that does not affect the process temperature of the processing space (312).

[0059] Here, the above-mentioned 'installation distance (D)' can be defined as the distance between the cooling gas supply hole (522) of the cooling gas supply path (520) in the internal chamber (300), and can be determined as, for example, 10 to 20 mm.

[0060] That is, the cooling gas supply hole (522) is formed at the bottom of the gas exhaust pipe (400) and supplies the cooling gas supplied through the cooling gas supply path (520) toward the inner space of the gas exhaust pipe (400). In this case, the cooling gas supply hole (522) may be configured in multiple numbers, and may be formed in multiple rows, for example, as illustrated in FIG. 2.

[0061] Specifically, the installation distance (D) of the cooling gas supply hole (522) may correspond to less than half (L / 2) of the total length (L) of the gas exhaust pipe (400) protruding from the internal chamber (300), thereby lowering the internal temperature of the gas exhaust pipe (400) to below the reaction temperature of the process gas by the cooling gas.

[0062] In addition, as illustrated in FIG. 1, the cooling gas supply path (520) may be connected to the lower portion of the gas exhaust pipe (400). When cooling gas is supplied from the bottom to the upper portion of the gas exhaust pipe (400) through the cooling gas supply path (520), foreign substances such as powder that may be attached to the inner portion of the gas exhaust pipe (400) can be further reduced.

[0063] Meanwhile, FIG. 4 is a graph showing the temperature change inside the processing space (312) and the gas exhaust pipe (400) in the chemical vapor deposition apparatus according to the present invention.

[0064] Referring to Figure 4, the process gas is at the process temperature (T) between 'A1' and 'A2' (or the processing space (312)). P ) is maintained, and thereby the process for the substrate (W) can be performed in the processing space (312).

[0065] Next, the process gas, etc., is exhausted through the gas exhaust pipe (400). However, the temperature of the process gas exhausted through the gas exhaust pipe (400) is lowered from the aforementioned reaction temperature inside the gas exhaust pipe (400) (area A') by the cooling gas supplied by the cooling gas supply unit (500).

[0066] In this case, unlike the previously discussed Fig. 3, it is possible to prevent a decomposition reaction of the process gas from occurring inside the gas exhaust pipe (400), thereby preventing foreign substances such as powder from attaching to the inside of the gas exhaust pipe (400). As a result, the exhaust efficiency of the gas exhaust pipe (400) can be increased.

[0067] While the present invention has been described above with reference to preferred embodiments, those skilled in the art will appreciate that various modifications and variations can be made to the present invention without departing from the spirit and scope of the invention as defined in the claims below. Therefore, any modified implementation that fundamentally includes the elements of the claims should be considered within the technical scope of the present invention.

[0068] According to the present invention, by supplying cooling gas to a gas exhaust pipe through which gas is exhausted in a processing space for a substrate, the internal temperature of the gas exhaust pipe is lowered to below the reaction temperature of the process gas, thereby preventing foreign substances such as powder from being attached inside the gas exhaust pipe.

Claims

1. A chamber that provides a processing space for the substrate; A gas exhaust pipe connected to the processing space and through which gas from the processing space is exhausted to the outside of the chamber; and A chemical vapor deposition apparatus characterized by comprising a cooling gas supply unit connected to the gas exhaust pipe and supplying cooling gas to the gas exhaust pipe.

2. In paragraph 1, A lower plate provided inside the chamber on which the substrate is mounted, A chemical vapor deposition apparatus characterized in that it further comprises an upper cover provided on the upper portion of the lower plate to provide a processing space for the substrate between the upper portion and the lower plate.

3. In paragraph 1, The above cooling gas supply unit A chemical vapor deposition apparatus characterized by having a cooling gas supply path connected to the gas exhaust pipe and supplying the cooling gas to the inside of the gas exhaust pipe.

4. In paragraph 3, The above cooling gas supply path is A chemical vapor deposition device characterized in that it is connected to the gas exhaust pipe adjacent to the processing space.

5. In paragraph 3, The above cooling gas supply path is A chemical vapor deposition device characterized in that it is connected to the lower part of the above gas exhaust pipe.

6. In paragraph 1, The above cooling gas supply unit A chemical vapor deposition device characterized in that the temperature of the gas exhaust pipe is lowered below the reaction temperature of the process gas.

7. In paragraph 1, The above cooling gas supply unit A chemical vapor deposition device characterized by supplying hydrogen as a cooling gas.

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