Method for improving adhesion to copper surfaces

Abstract

The present invention relates to a method for producing a copper-clad laminate for use in high-frequency applications, and to adhesion-promoting preparations having suitable dielectric properties, characterized in that said preparations contain components having direct Si-Si bonds, and to a method for producing the preparations.

Description

[0001] Wa 12335-S / Wi Method for improving adhesion to copper surfaces The present invention relates to a method for producing a copper-clad laminate for use in high-frequency applications, as well as adhesion-promoting preparations with suitable dielectric properties, characterized in that they contain components with direct Si-Si bonds, and a method for producing these preparations. With the progressive development of high-frequency technology using frequencies in the GHz range, in particular > 6 GHz for wireless communication using fifth-generation mobile communication (5G) or higher technology, the demand for materials suitable for its implementation is increasing. This applies to all areas of materials such as copper foils, binders, glass fibers, etc. The binders are those traditionally used for the production of copper-clad laminates orEpoxy resins used in circuit boards are no longer usable due to their excessively high dielectric loss factors. Polytetrafluoroethylene, which has a very low dielectric loss factor and is well-suited for high-frequency applications, has other disadvantages, particularly poor processability and poor adhesion properties. It is therefore desirable to provide an alternative or improvements to these binders that combine good adhesion properties, even on very smooth surfaces, with a low dielectric loss factor. Polyphenylene ethers are currently being used extensively as binders for this application because they combine low dielectric loss factors with good mechanical and thermal properties and water repellency.In addition, other organic polymers are also being considered in current development activities for this application area, such as bismaleimide polymers, bismaleimide triazine copolymers, hydrocarbon resins, polyorganosiloxanes, including silicone resins, although this list could be expanded to include others. All of these polymer types possess varying degrees of heat resistance, weathering stability, and hydrophobicity; they are flame-resistant or can be formulated as flame-resistant; they have low dielectric loss factors, and in some cases, they also possess the thermal expansion coefficients required for the application.Furthermore, suitable formulations or more or less complex surface treatment methods can also be used to create adhesion to the predominantly used copper surfaces and to improve other suboptimal properties and optimize them with a view to better fulfilling the required requirement profiles. The fact that the very challenging dielectric properties must always be met as a boundary condition for all formulations and all raw materials used severely limits the selection of conceivable formulation components and often allows the best possible but not the optimal result to be achieved, so that the development ends with a compromise that is good enough to meet a set of minimum requirements.Particular attention is paid to binder development, as binders are an essential, indispensable component of metal-clad laminates used in circuit board production. Wa 12335-S / Wi 3 Their property profiles qualify both the aforementioned organic polymers and the polyorganosiloxanes for use as binders in the production of high-frequency-capable copper-clad laminates and components, such as circuit boards and antennas, but still leave room for improvement. To meet the requirements for the use of ever higher frequencies combined with ever lower dielectric loss factors, ever thinner and thus smoother copper surfaces are needed, meaning the roughness values ​​of the copper surfaces are becoming ever lower.The smoother the copper surfaces become, the more difficult it becomes to achieve sufficient adhesion, because the possibility of mechanically anchoring the matrix material used in the irregularities of the copper surface naturally diminishes with the reduction of these irregularities. Thus, mechanical anchoring must be replaced by anchoring through another interaction, such as a chemical one. Suitable adhesion promoters must not increase the dielectric loss factor, as this would invalidate the remaining usability of an electronic component for high-frequency applications. The challenge, therefore, is to simultaneously meet the two requirements of good adhesion and a low dielectric loss factor.It would be optimal, because it would also be easier to implement, if good adhesion were not achieved through a separate adhesion-promoting component that must be incorporated into a formulation, but rather if the binder itself already possessed this property. This would eliminate the need to incorporate the adhesion-promoting component into a formulation. For example, with Wa 12335-S / Wi 4, both the chemical and physical compatibility of the formulation components must be taken into account, which must be appropriately balanced in the interest of the desired result. To achieve mechanical adhesion, it is common practice to create unevenness on copper surfaces with cavities filled with a binder, which then cures within the cavities. These unevennesses can be created by particle deposition on the copper surface, preferably by metal deposition.This method works better the greater the roughness created on the copper surface by pretreatment. US 676464 teaches how to achieve adhesion of silicone elastomers to various surfaces, explicitly excluding copper surfaces because adhesion to copper cannot be achieved with the methods presented. The teaching of US 676464 is that the adhesion is achieved according to the invention through the use of halogenated disilanes, each of which contains a Si-Si bond. This means that US 676464, as prior art, excludes the possibility of achieving adhesion to copper with compounds containing Si-Si bonds, provided they are disilanes. US 2601336 claims a process for achieving adhesion to copper surfaces that are inactivated by the formation of copper oxide.Existing copper oxide is removed by acidic pretreatment of the copper surface, and the resulting reactive pure copper surface is immediately further processed by bringing it into suitable contact with the desired matrix material, which in the case of US 2601336 is a polyorganosiloxane elastomer. The surface quality of the Wa 12335-S / Wi 5 copper surface is not described in detail, particularly with regard to surface roughness, although in 1949 this could not yet meet the requirements of future high-frequency applications due to the lack of technical capabilities at that time for producing highly smooth copper surfaces. The influence of surface roughness on the adhesion-promoting effect is therefore not apparent from the description of the invention. The same applies to the influence of the adhesion-promoting measures on the dielectric properties.Since silicone elastomers do not meet the requirements for high-frequency binders for the production of copper-clad laminates, such as sufficient stability against softening under soldering conditions, the invention according to US 2601336 is not suitable for this field of application. US 20020617653 teaches adhesion promoter preparations for copper foils for dielectric laminates, containing a phenolic resin and a derivatized epoxy resin. The preparations in question contain significant amounts of polar functional groups and are therefore unsuitable for high-frequency applications in the GHz range due to their high dielectric loss factors and dielectric constants. US 2004209109 teaches the creation of good adhesion to copper foils for the production of high-frequency laminates by changing the chemical identity of the copper surface through the application of a so-called heat-resistant layer made of one or more other metals.The heat-resistant metal layer can be applied electrolytically, for example. The heat-resistant layer is a metal layer consisting of zinc, zinc and tin, zinc and nickel, zinc and cobalt, zinc and copper, copper and nickel and cobalt, or nickel and cobalt, which is deposited on the copper surface. Instead of the Wa 12335-S / Wi 6 adhesion to copper, the adhesion of an electrically insulating resin to this different metal surface is then created, with an essential additional component for improving adhesion being the use of a layer made from an olefinically unsaturated silane. The adhesion-promoting effect according to the invention is only achieved through the combination of these two layers. The layer of the olefinically unsaturated silane is in contact with the electrically insulating binder in the overall structure of the copper-clad laminate.Additional layers can include a corrosion-protective layer of chromate or zinc chromate, or a polyorganosiloxane layer, each sandwiched between the heat-resistant layer and the layer formed from the olefinically unsaturated silane. The unsaturated silanes used for the silane layer are alkoxy-functional acrylate, methacrylate, or vinyl silanes, which can be applied as a slightly acidic aqueous solution by spraying, dipping, or other coating techniques, followed by forced drying at up to 180°C. The use of alkoxy-functional silanes as adhesion promoters has long been known in the art. The preferred adhesion-promoting silanes, which are amino- or epoxy-functional, cannot be used here because their dielectric properties do not permit this for high-frequency applications.The olefinically unsaturated silanes that are the subject of the invention in US 2004209109 possess less pronounced polar functional groups. Since electrically insulating resins that cure radically are typically used for high-frequency applications, and the silanes used here can be cured according to Wa 12335-S / Wi 7, their good bonding into the matrix of the electrically insulating resin is understandable. The problem of creating adhesion to a copper surface was not solved by the invention according to US 2004209109 so much as circumvented it by creating another metal surface instead of the copper surface, on which adhesion can then be achieved.Although it was demonstrated in US 2004209109 that good adhesion properties can be achieved with the inventive method, the suitability of this invention for high-frequency applications with frequencies in the GHz range is not demonstrated, not even in corresponding examples in the invention specification. The invention specification US 2004209109 fails to mention a specific frequency band that indicates what is meant by high or higher frequencies. Ultimately, for an invention from 2004, it is not to be expected that high frequencies would be understood to mean those in the GHz range, since at that time the fourth generation of mobile communications technology was not even marketed, let alone the requirements of the fifth or later generations, which are relevant from today's perspective, could be taken into account.US 6251775 describes the production of semiconductor elements using metal silicide layers to improve adhesion between metal and nitride layers, where the metal is in particular copper and the nitride layer is in particular silicon nitride. The metal layer is pretreated prior to metal silicide production by means of a plasma treatment using an ammonia plasma or a hydrogen plasma at approximately 400°C. The metal silicide layer is produced by plasma-enhanced chemical vapor deposition Wa 12335-S / Wi 8 using SiH4. US 6251775 is an improvement on US 5447887. While this type of process is quite common in the semiconductor industry, it is not available for the large-scale production of metal-clad laminates. The production of metal-clad laminates for further processing into circuit boards usually takes place in a regular atmosphere, i.e., in the presence of air.SiH4 is a self-igniting, explosive monomer in air and can only be handled in complete air isolation. The high temperatures required for chemical vapor deposition are also uncommon and unavailable in this industry, so the invention according to US Pat. No. 6,251,775 is not applicable to the production of metal-clad laminates for mobile communications. The present invention is dedicated to the task of providing a process suitable for producing good adhesion to the surface of copper for use in high-frequency applications without adversely affecting the dielectric properties of single- or double-sided copper-clad laminates, and which is suitable for integration into today's standard manufacturing processes for single- or double-sided copper-clad laminates.The most important dielectric property, which must not be adversely affected, i.e., in particular, must not be increased by the application of the method according to the invention, is the dielectric loss factor. This object is achieved by the invention. Surprisingly, it has been found that the object of the invention is achieved by the use of silicon-containing components with a high proportion of Si-Si bonds. These components can be used either as additives or as binders or co-binders.A first aspect of the invention is directed to a process for producing a copper-clad laminate, comprising the following steps in the given order: (i) Providing a silicon-containing adhesion-promoting mixture comprising at least one organosilicon compound according to general formula (I), particles of elemental silicon or mixtures thereof: R. a R 1 b Si [(SiR 2 c R 3 d )] e [(R 4 f SiO (4-f) / 2 )] g Y h SiR a R 1 b (I), wherein the group Y can occupy any position within the organosilicon compound, for example - between one or more groups [(R4fSiO(4-f) / 2)]g and one or more groups SiR a R 1 b, - between one or more groups (SiR2cR3d) and one or more groups SiR a R 1b , -between two or more groups SiRaR1b, or- between two or more groups (SiR2cR3d);at least one sequence is contained in which 3 Si atoms are linked to one another in succession via Si-Si bonds, preferably at least 4, in particular at least 5; Wa 12335-S / Wi 10R is the same or different and denotes hydrogen or a monovalent Si-C bonded, optionally heteroatom-substituted hydrocarbon radical having 1 to 18 C atoms; R 1 , R 2 , R 3 and R 4each independently of one another denotes a hydrogen radical or a Si-C-bonded, optionally heteroatom-substituted hydrocarbon radical having 1 to 18 C atoms or a hydrocarbon radical having 1 to 12 C atoms bonded via an oxygen atom and optionally heteroatom-substituted or a silanol radical, preferably a hydrogen radical or a Si-C-bonded, optionallyhydrocarbon radical having 1 to 18 C atoms substituted by heteroatoms;Y each independently denotes a di- to twelvevalent aromatic, alkylaromatic, cycloalkylaromatic or a di- to twelvevalent aliphatic or cycloaliphatic hydrocarbon radical, preferably a di- to twelvevalent aromatic, alkylaromatic or cycloalkylaromatic radical, having 1 to 48 C atoms, which is free of heteroatoms;a independently denotes 0, 1, 2 or 3;b independently denotes at most 3-a;c independently denotes 0, 1 or 2;d independently denotes 0 or 1;e has a value from 1 to 500; Wa 12335-S / Wi 11f independently denotes 0, 1, 2 or 3;g denotes an integer having a value from 0 to 200, where the proportion of the units [(R. 4fSiO(4-f) / 2)]g based on the amount of all units of the framework of the organosilicon compound does not exceed 30 mol%;h denotes 0 or 1;(ii) applying the silicon-containing adhesion-promoting mixture to a first copper surface of a first copper material, thereby producing an adhesion-promoting layer on the first copper surface; (iii) optionally applying a second copper material to the first copper surface of the first copper material pretreated according to step (ii); and (iv) curing at a temperature in the range of 60-380°C, preferably 80-300°C, more preferably 80-250°C, in particular 100-220°C, and a pressure of 1-100 bar, preferably 2-75 bar, more preferably 2-60 bar, in particular 3-55 bar, whereby a copper-clad laminate is obtained. The copper materials are preferably copper foils.In step (iii), the second copper material is applied in particular to the pretreated first copper surface such that a surface of the second copper material is in contact with the adhesion-promoting layer and is arranged opposite the first surface of the first copper material. Wa 12335-S / Wi 12 In a particular embodiment, the silicon-containing adhesion-promoting mixture comprises at least one organosilicon compound according to general formula (I) as defined above and optionally particles of elemental silicon. It is preferred that the second copper material also has a second copper surface pretreated according to step (ii) and step (iii) is carried out with the proviso that the treated side of the second copper surface is in contact with the adhesion-promoting layer on the first copper surface.In a preferred embodiment, the organosilicon compounds according to general formula (I) and / or the particles of elemental silicon are essentially free of oxygen. It has been shown that in the case of oxygen contamination, the low dielectric loss factors desired according to the invention can no longer be achieved to the required extent. The organosilicon compound according to formula (I) is, in particular, one that is suitable both as an additive and as a co-binder or binder. The particles of elemental silicon according to the invention are, in particular, those that are suitable as an additive. The organosilicon compound according to formula (I) according to the invention preferably has, even as a pure binder, a dielectric loss factor of no more than 0.0040, preferably no more than 0.0030, in particular no more than 0.0025.This is particularly the case if they are liquid (Wa 12335-S / Wi 13), well wet any fillers present that reduce the dielectric loss factor, allow the production of tack-free prepregs, and / or result in preparations compatible with organic polymers. The copper materials are, in particular, those that can be used in high-frequency applications. High-frequency applications are understood to mean, in particular, those that use frequencies of at least 1 GHz, preferably of more than 6 GHz, especially of more than 10 GHz. The first and, if applicable, second copper surfaces are preferably characterized by being a substantially smooth copper surface. Substantially smooth preferably means that the copper surface has roughness depths Rz of at most 5 µm, more preferably at most 4 µm, in particular at most 3 µm, measured according to ISO 25178.Good adhesion is also achieved with the method according to the invention on copper foils for use in lower frequency ranges and with greater surface roughness, although sufficiently good alternatives are already available for this purpose, which have long been state of the art and would not be significantly improved by the method according to the invention. Therefore, these applications, which use lower frequency ranges and copper surfaces with greater surface roughness than those specified as being inventive, are not included in the scope of the invention. The object of this method is to achieve the adhesion improvement without adversely affecting the dielectric Wa 12335-S / Wi 14 properties of the one- and two-sided copper-clad laminates obtainable according to the invention, in particular without increasing the dielectric loss factor.After completing steps (i) to (iv), the copper-clad laminate is produced, which, depending on the presence of optional step (iii), has a copper layer on one or both sides of the laminate. The silicon-containing adhesion-promoting preparation reacts with the copper surface through the organosilicon compound of general formula (I) or the particles of elemental silicon, thereby producing the adhesion effect according to the invention. Application in step (ii) can be carried out by dipping, spraying, knife coating, brushing, painting, or spin coating. The adhesion-promoting layer obtained after step (ii) can be devolatized immediately after step (ii). Devolatization can be carried out by evaporation, particularly using a vacuum.In a further preferred embodiment, step (ii)' follows immediately after step (ii), in which a silicon-containing adhesion-promoting mixture according to general formula (I) as defined above, a polymeric binder, or a mixture thereof is again applied to the adhesion-promoting layer on the first copper surface treated according to step (ii) in order to produce a polymer layer on the adhesion-promoting layer. Wa 12335-S / Wi 15 In this embodiment, a polymer layer is thus produced on the adhesion-promoting layer in step (ii)' between steps (ii) and (iv), if no step (iii) is carried out, or between steps (ii) and (iii), if step (iii) is carried out. If step (iii) is carried out, both an adhesion-promoting layer and a polymer layer are located between the two copper materials.If a polymer layer is present, in step (iii) the second copper material is applied to the pretreated first copper surface in particular such that a surface of the second copper material is in contact with the polymeric binder layer and is arranged opposite the first surface of the first copper material. If step (iii) is carried out, both an adhesion-promoting layer and a polymer layer are located between the two copper materials. If a polymer layer is present, it is preferred that the second copper material also has a second copper surface pretreated according to step (ii), and that step (iii) is carried out with the proviso that the second copper surface, with its treated side, is in contact with the polymeric binder layer on the first copper surface.It is preferred that the silicon-containing adhesion-promoting mixture in step (ii) and / or in step (ii)' further comprises at least one reinforcing material, in particular a single-fiber reinforcing material, for example selected from glass fibers, silica fibers or polymer fibers.Wa 12335-S / Wi 16 If a step (ii)', as defined above, is present, it is preferred that the silicon-containing adhesion-promoting mixture in step (ii) or the silicon-containing adhesion-promoting mixture in step (ii)' or the silicon-containing adhesion-promoting mixture in step (ii) and step (ii)' further comprises at least one reinforcing material, in particular a fibrous reinforcing material, for example selected from glass fibers, silica fibers or polymer fibers. It is very particularly preferred that the silicon-containing adhesion-promoting mixture in step (ii) comprises at least one fibrous reinforcing material, which is preferably formed as a layer, for example a glass fiber layer. These fibers can have a diameter of 10 nm to 10 µm.In a preferred embodiment, the presence of at least one reinforcing material within the silicon-containing adhesion-promoting mixture is achieved by impregnating a layer of the reinforcing material with the silicon-containing adhesion-promoting mixture. The layer preferably has a thickness of at most 200 µm, more preferably of at most 150 µm. The silicon-containing adhesion-promoting mixture is, in particular, a glass fiber mat impregnated with at least one organosilicon compound according to general formula (I). In this context, it is particularly preferred that a glass fiber mat impregnated in this way is dried before being applied to the Wa 12335-S / Wi 17 copper material. A glass fiber mat pretreated in this way is referred to as a prepreg.In a preferred embodiment, the silicon-containing adhesion-promoting mixture in step (ii) further comprises a polymeric binder, preferably selected from organic monomeric, oligomeric, and / or polymeric binders. For particularly good mechanical properties of the resulting copper-clad laminate, it is advantageous to directly admix a polymeric binder to the silicon-containing mixture in step (ii), thereby obtaining an adhesion-promoting layer which additionally comprises a crosslinked polymeric binder. The polymeric binder according to the invention is preferably selected independently of one another such that the silicon particles according to the invention or the organosilicon compound of formula (I) are compatible therewith or can copolymerize therewith. Compatibility is present when the silicon particles or the compounds according to formula (I) orwhose reaction products with the copper surface are wettable by the binder chosen for the production of the copper-clad laminate. The silicon particles and the compounds of formula (I) can copolymerize if they themselves possess suitable functional groups, particularly olefinically or acetylenically unsaturated groups that can undergo radical curing and copolymerization. The silicon particles are preferably used without functional groups on the surface.Wa 12335-S / Wi 18 It is preferred that the binder mixture comprises at least one organic monomeric, oligomeric, and / or polymeric binder selected from polyphenylene ethers, bismaleimides, bismaleimide triazine copolymers, aliphatic hydrocarbon resins, such as polybutadiene, aromatic hydrocarbon resins such as polystyrene, and hybrid systems comprising both aliphatic and aromatic hydrocarbon resins, such as styrene-polyolefin copolymers, epoxy resins, and cyanate ester resins. Particularly preferred organic monomers, oligomers, and polymers are oligomeric and polymeric polyphenylene ethers, monomeric, oligomeric, and polymeric bismaleimides, oligomeric and polymeric hydrocarbon resins, and bismaleimide triazine copolymers. The organic monomers, oligomers, and polymers can optionally be used mixed with one another.The process according to the invention can therefore be carried out in two different forms, which are explained in more detail below. In the first embodiment, the process according to the invention consists in applying the adhesion-promoting silicon-containing mixture, optionally as a preparation mixed with other components, to the copper surface before producing a copper-clad laminate with the thus pretreated copper surface. This process is referred to below as priming. Secondly, the process according to the invention can be carried out such that the adhesion-promoting silicon-containing mixture is used to produce a copper-clad laminate Wa 12335-S / Wi 19 without prior priming of the copper surface. This process is referred to below as the binder process. Silicon particles cannot act as binders.They can only be used as an adhesion-promoting additive. The polysilanes of formula (I) can act as binders or be used as additives. Therefore, all statements made below regarding the inventive use of the inventive silicon-containing mixture as a binder or co-binder apply only to the polysilanes of formula (I), while all statements regarding the use of the inventive silicon-containing adhesion-promoting mixture as an additive apply to both the silicon particles and the polysilanes of formula (I). The distinction between use as an additive and use as a binder of the polysilanes of formula (I) is made based on the amount of the polysilanes used. Amounts of the polysilanes of formula (I) that are not suitable for forming a continuous polymer phase or for forming one to a significant extent in a mixture with others are referred to as additives.Additive amounts are typically amounts of the adhesion-promoting binders according to the invention less than or equal to 1.0 percent by weight of the total amount of all polymers used as binders. In the present invention, use of the polysilanes of formula (I) as cobinders is referred to when the proportions of the total amount of all polymers used as binders are > 1.0 up to 10.0 percent by weight. Binders are referred to when the proportion of polysilanes of formula (I) makes up more than 10 percent by weight of the total amount of binder Wa 12335-S / Wi 20. These ranges may differ from the understanding of additive amounts, cobinder amounts, and binder amounts from other literature, but reflect the understanding of the terms used in the present invention.The amounts of silicon particles that can be used only as an adhesion-promoting additive are between 0.02 percent by weight and 1.0 percent by weight, based on the total formulation as 100 percent by weight including the solvents. Particles of elemental silicon are preferably silicon particles with a particle size D50 of 10 nm to 2000 nm, preferably 30 nm to 1000 nm, more preferably 50 nm to 500 nm, and / or have an oxygen content of <1 percent by weight, particularly preferably <0.75 percent by weight, in particular <0.5 percent by weight.What both processes, the priming process and the binder process, have in common is that curing takes place at an elevated pressure of at least 3 bar, preferably at least 5 bar, more preferably at least 10 bar, in particular at least 20 bar, and at an elevated temperature of at least 120°C, preferably at least 140°C, more preferably at least 160°C, in particular at least 180°C, with the most preferred curing temperature being at least 200°C. The conditions mentioned act for a period of at least 20 minutes, preferably at least 40 minutes, more preferably at least 60 minutes, in particular at least 120 minutes. It is a characteristic property of both embodiments of the process according to the invention that the Wa 12335-S / Wi 21 achievable adhesion effect is more pronounced the higher the pressure and temperature.For particularly difficult adhesion tasks, this boundary condition must be observed for the successful application of the method according to the invention, regardless of the selected embodiment. Adhesion tasks become particularly difficult when the copper surfaces used are contaminated, and the contaminants impede interaction between the copper surface and the adhesion-promoting binder according to the invention. The most frequently observed contaminants are oxygen chemically bound to the copper surface or inhibitors such as benzotriazole applied to the copper surface for the purpose of oxidation protection. To support the adhesion-promoting effect, a cleaning pretreatment of the copper surface, particularly by removing the oxygen contamination, for example, by pickling according to the prior art, can therefore be helpful.In the case of the procedure using a primer, the process according to the invention comprises the following steps: 1. Preparation of a liquid adhesion-promoting preparation, optionally using further components, in addition to the silicon particles according to the invention or the polysilanes of the formula (I), in particular solvents. 2. Application of the adhesion-promoting preparation from 1. to a copper surface using prior art methods, for example by dipping, spraying, knife coating, brushing, painting, spin coating, etc. 3. Deflocculating the adhesion-promoting coating according to 2., if volatile components are present, using prior art methods, such as, for example, by evaporation by applying elevated temperatures suitable for evaporation, in particular temperatures above the boiling point of the volatile components to be removed, if necessary.using vacuum methods that reduce the boiling point of the volatile components. 4.Production of the copper-clad laminate with the thus pretreated copper surfaces according to the prior art procedure, wherein for this purpose a glass fiber reinforced or otherwise reinforced or also a non-reinforced binder mixture according to the prior art is preferably applied to the copper foil or, in the case of a two-sided copper-clad laminate, between the copper foils and the obligatory curing takes place at an elevated temperature of 60 - 380°C, preferably 80 - 300°C, particularly preferably 80 - 250°C, in particular 100 - 220°C and pressures of 1 - 100 bar, preferably 2 - 75 bar, particularly preferably 2 - 60 bar, in particular 3 - 55 bar, wherein the silicon-containing mixture according to the invention, i.e. the silicon particles or the polysilanes of the formula (I), react with the copper surface, thereby producing the adhesion effect.For a good adhesion effect according to this embodiment of the invention as a primer, the silicon particles according to the invention or the polysilanes of formula (I) must be compatible with the binder mixture used or capable of copolymerizing with it. Compatibility is present when the silicon particles or the polysilanes of formula (I), or their reaction products, are wettable with the copper surface by the binder selected for the production of the copper-clad Wa 12335-S / Wi 23 laminate. The silicon particles and the polysilanes of formula (I) can copolymerize if they themselves possess suitable functional groups, in particular olefinically or acetylenically unsaturated groups that can undergo radical curing and copolymerization. The silicon particles are preferably used without functional groups on the surface.The binder for the glass fiber-reinforced or otherwise reinforced or unreinforced binder mixture can also be a modified adhesion-promoting binder according to the invention. If the process according to the invention is carried out as a binder process, it comprises the following steps: 1. Production of a binder preparation for producing a copper-clad laminate, which contains the silicon particles according to the invention or the polysilanes of formula (I) in addition to, if necessary, solvents, fillers, reinforcements, and other components for adjusting further properties. Pretreatment of the copper surface according to the priming process as described above, using an adhesion-promoting binder according to formula (I) according to the invention, can additionally take place and may be necessary if the copper surface is covered with an oxide layer or coated with a corrosion inhibitor. 2.Production of the copper-clad laminate with the binder preparation modified to promote adhesion according to the invention from 1. according to the procedure according to Wa 12335-S / Wi 24 prior art, wherein the curing required for this takes place at an elevated temperature of 60 - 380°C, preferably of 80 - 300°C, particularly preferably of 80 - 250°C, in particular of 100 - 220°C and pressures of 1 - 100 bar, preferably of 2 - 75 bar, particularly preferably of 2 - 60 bar, in particular of 3 - 55 bar, wherein the silicon particles or the polysilanes of the formula (I) enter into a chemical interaction with the copper surface and produce the adhesion between the binder mixture and the copper surface. In all steps, either only one or more silicon particles or only one or more polysilanes of formula (I) can be used, or mixtures thereof, optionally comprising several different silicon particles and polysilanes of formula (I).Silicon particles are obtainable by various methods, particularly prior art milling methods, for example, according to EP 3027690, EP 1102340, US 11154870, US 7883995, and US 2008 / 0054106. These methods require silicon particles whose surfaces are not inactivated by an oxide layer. Therefore, milling processes that ensure, through the application of suitable conditions, that no oxide layers form on the surface of the particles are preferable, as is the case, for example, in US 2008 / 0054106 and US 11154870. A preferred method is that described in US 11154870. Since only certain silicon particle sizes can be used here, the selected milling method must take this circumstance into account. This is the case in US 11154870. US 7883995 teaches a process in which surface-functionalized silicon particles are obtained by using a reactive grinding medium, in particular alkenes.This results in olefinically functionalized Wa 12335-S / Wi 25 silicon surfaces that are reactive toward suitable reactants. This list of prior art methods for achieving small silicon particles is not exhaustive, but merely exemplary. In addition to the prior art methods mentioned, others are also applicable that lead to silicon particles with the required properties. The silicon particles are preferably those with a particle size specified as D50 with a value of 10 nm to 2000 nm, preferably 30 nm to 1000 nm, in particular 50 nm to 500 nm. Although larger particles are generally suitable for achieving the effect according to the invention, as expressly noted here, larger particles are not claimed as being according to the invention, since the invention is dedicated to the production of copper-clad laminates for high-frequency applications, for which larger particles than those specified are not suitable.They would lead to rough surfaces, which is an unacceptable disadvantage in the application of the invention. This may be acceptable for other applications. However, such applications are not considered here and are therefore not the subject of the invention. The oxygen content of the silicon particles according to the invention, determined using the Leco TCH 600 oxygen analyzer, is preferably <1 weight percent, particularly preferably <0.75 weight percent, in particular <0.5 weight percent. Preferred silicon nanoparticles are those obtained in EP 3027690 B1 according to Example 2 and according to EP 3386638 B1 according to Example 1. The contents of EP 3027690 B1 and Wa 12335-S / Wi 26 EP 3386638 B1 are hereby expressly incorporated by reference.It is preferred that in formula (I), based on all Si atoms bonded to one another by Si-Si bonds, at least 60% are present in sequences in which at least 3 Si atoms are linked to one another in succession via Si-Si bonds, preferably at least 65%, more preferably at least 70%. In a preferred embodiment, in formula (I), all Si atoms bonded to one another by Si-Si bonds are present in sequences in which at least 3 Si atoms are linked to one another in succession via Si-Si bonds. It is preferred that in formula (I) the group [(R 4 f SiO (4-f) / 2 )] gat most 30 mol% based on the total amount of the organosilicon compound according to formula (I), preferably at most 25 mol%, more preferably at most 20 mol%, more preferably at most 15 mol%, in particular at most 3 mol%. The organosilicon compound according to general formula (I) and / or the particles of elemental silicon are preferably substantially free of oxygen, in particular free of oxygen. It is preferred that the organosilicon compound according to general formula (I) is linear or in the form of a branched, network-like structure. The copper surface can be cleaned in a preceding step, in particular by pickling. Wa 12335-S / Wi 27 It is preferred that the copper surface is covered with copper oxide to an extent of at most 30% of the total copper surface, preferably not covered by a copper oxide layer.A further object of the present invention is directed to a copper-clad laminate obtainable by a process according to one of the preceding claims. The copper-clad laminate finds particular application in high-frequency technology. A further object of the present invention is directed to an adhesion-promoting silicon-containing mixture comprising at least one organosilicon compound according to general formula (I), particles of elemental silicon, or mixtures thereof: R. a R 1 b Si [(SiR 2 c R 3 d )] e [(R 4 f SiO (4-f) / 2 ] g Y h SiR a R 1 b (I), wherein the group Y can occupy any position within the organosilicon compound, for example - between one or more groups [(R4fSiO(4-f) / 2)]g and one or more groups SiRaR 1b, -between one or more groups (SiR2cR3d) and one or more groups SiR a R 1 b, -between two or more groups SiRaR1b, or- between two or more groups (SiR2cR3d); Wa 12335-S / Wi 28 at least one sequence is contained in which 3 Si atoms are linked to one another in succession via Si-Si bonds, preferably at least 4, in particular at least 5;R is the same or different and denotes hydrogen or a monovalent Si-C-bonded, optionally heteroatom-substituted hydrocarbon radical having 1 to 18 C atoms;R1, R2, R3 and R4 each independently denote a hydrogen radical or a Si-C-bonded, optionally heteroatom-substituted hydrocarbon radical having 1 to 18 C atoms or a hydrocarbon radical having 1 to 12 C atoms bonded via an oxygen atom and optionally heteroatom-substituted or a silanol radical, preferably a hydrogen radical or a Si-C-bonded, optionally heteroatom-substitutedhydrocarbon radical having 1 to 18 C atoms substituted by heteroatoms;Y each independently denotes a di- to twelvevalent aromatic, alkylaromatic, cycloalkylaromatic or a di- to twelvevalent aliphatic or cycloaliphatic hydrocarbon radical, preferably a di- to twelvevalent aromatic, alkylaromatic, cycloalkylaromatic radical, having 1 to 48 C atoms, which is free of heteroatoms;a independently denotes 0, 1, 2 or 3;b independently denotes at most 3-a;c independently denotes 0, 1 or 2; Wa 12335-S / Wi 29d independently denotes 0 or 1;e assumes a value of 1 to 500;f independently denotes 0, 1, 2 or 3;g denotes an integer having a value of 0 to 200, where the proportion of the units [(R. 4 f SiO (4-f) / 2 )] gbased on the amount of all units of the framework of the organosilicon compound, does not exceed 30 mol%;h denotes 0 or 1.The adhesion-promoting preparation according to the invention can be produced by dissolving, mixing, or dispersing at least one organosilicon compound according to general formula (I), particles of elemental silicon, or mixtures thereof in a matrix, wherein the matrix is ​​selected from at least one solvent, at least one reactive diluent, at least one matrix binder, and mixtures thereof. The present invention further relates to the use of the adhesion-promoting silicon-containing mixture according to claim 11 for promoting adhesion to copper surfaces of copper materials.The adhesion-promoting silicon-containing mixture is applied to a copper surface, in particular in a form suitable for applying a coating to a copper surface. The application can be followed by further steps, in particular for curing the resulting coating. Wa 12335-S / Wi 30 Preferred uses of the adhesion-promoting preparation according to the invention are the production of metal-clad laminates, in particular for the high-frequency range, or as corrosion protection for metal coated therewith, wherein the metal is preferably copper. The present invention further relates to an organosilicon compound according to formula (I): R. a R 1 b Si [(SiR 2 c R 3 d )] e [(R 4 f SiO (4-f) / 2 ] g Y h SiR a R 1 b(I), wherein the group Y can occupy any position within the organosilicon compound, for example - between one or more groups [(R4fSiO(4-f) / 2)]g and one or more groups SiR a R 1 b, - between one or more groups (SiR2cR3d) and one or more groups SiR a R 1 b, -between two or more groups SiRaR1b, or- between two or more groups (SiR2cR3d);at least one sequence is contained in which 3 Si atoms are linked to one another in succession via Si-Si bonds, preferably at least 4, in particular at least 5;R is the same or different and denotes hydrogen or a monovalent Si-C-bonded, optionally heteroatom-substituted hydrocarbon radical having 1 to 18 C atoms; Wa 12335-S / Wi 31R1, R2, R3 and R4 each independently denote a hydrogen radical or a Si-C-bonded, optionally heteroatom-substituted hydrocarbon radical having 1 to 18 C atoms or a hydrocarbon radical having 1 to 12 C atoms bonded via an oxygen atom and optionally heteroatom-substituted or a silanol radical, preferably a hydrogen radical or a Si-C-bonded, optionally heteroatom-substitutedhydrocarbon radical having 1 to 18 C atoms substituted by heteroatoms;Y each independently denotes a di- to twelvevalent aromatic, alkylaromatic, cycloalkylaromatic or a di- to twelvevalent aliphatic or cycloaliphatic hydrocarbon radical, preferably a di- to twelvevalent aromatic, alkylaromatic, cycloalkylaromatic radical, having 1 to 48 C atoms, which is free of heteroatoms;a independently denotes 0, 1, 2 or 3;b independently denotes at most 3-a;c independently denotes 0, 1 or 2;d independently denotes 0 or 1;e assumes a value of 1 to 500;f independently denotes 0, 1, 2 or 3;g denotes an integer having a value of 0 to 200, where the proportion of the units [(R. 4fSiO(4-f) / 2)]g based on the Wa 12335-S / Wi 32 amount of all units of the framework of the organosilicon compound does not exceed 30 mol%; h denotes 0 or 1. In the event that h denotes 0, Y represents a chemical bond. The organosilicon compound according to the invention comprises, in particular, a framework which is predominantly or exclusively constructed by Si-Si bonds. In formula (I), the building blocks do not necessarily have to follow one another in the given order, so that in particular the group Y does not have to be between one or more groups [(R4fSiO(4-f) / 2)]g and one or more groups SiRaR1b, but also between one or more groups (SiR2cR3d) and one or more groups SiRaR1b or between two or more groups SiR a R 1 b or between two or more groups (SiR 2 cR 3d) and so forth. In the compounds of formula (I) according to the invention, the framework-forming Si atoms, which are connected to one another by direct Si-Si bonds and which make a positive contribution to the inventive effect, are always directly connected to one another in sequences of at least 3 Si atoms, preferably at least 4, in particular at least 5. The framework-forming Si atoms are those that are directly indicated as Si atoms in formula (I). Wa 12335-S / Wi 33 To achieve the inventive effect, it has proven particularly advantageous to have the longest possible uninterrupted Si chains. Although it is permissible for the framework-forming Si atoms in the compounds of formula (I) to be present in sequences of only two Si atoms, these two-atom sequences do not contribute to the inventive effect. This is only achieved by at least 3 uninterrupted Si atoms bonded to one another.To ensure that a sufficient number of Si sequences effective according to the invention with at least 3 Si atoms bonded to one another in direct succession are present, it is preferable that, based on the sum of all framework-forming Si atoms that are directly bonded to one another by Si-Si bonds, at least 60% are present in sequences of at least 3 Si atoms, preferably at least 65%, in particular at least 70%. The best results in terms of the problem to be solved are obtained when the Si atoms are present exclusively in sequences of at least 3 Si atoms bonded to one another directly. This is therefore the most preferred embodiment of the invention. The Si atoms of the building block [(R. 4 f SiO (4-f) / 2 )] gfrom formula (I) are connected to their neighboring Si atoms by Si-O-Si bonds. In a preferred embodiment, the building block [(R4fSiO(4-f) / 2]g makes up at most 30 mol-%, preferably at most 25 mol-%, particularly preferably at most 20 mol-%, in particular at most 15 mol-% in the molecular structure of the compounds of formula (I). Wa 12335-S / Wi 34 In particular, it is preferred that the building block [(R 4 f SiO (4- f) / 2]g is not present as an impurity in the compounds of formula (I) or only in technically unavoidable amounts of at most 3.0 mol%. The building block [(R4fSiO(4-f) / 2] does not contribute to the inventive effect. Therefore, it is not a necessity of the invention and its proportion should be kept low in order to achieve the inventive effect in the desired form. The lower the proportion of the building block [(R 4 f SiO (4-f) / 2 ] gis, the better the effect according to the invention can be achieved. Just as oxygen interferes as an impurity on the copper surface or the surface of the silicon particles according to the invention, this is also the case as a component of the polysilanes of formula (I). However, it is tolerable within the quantities specified as maximum limits. Therefore, its presence in the scope of the invention is not fundamentally excluded. In essence, however, the effect according to the invention can be reduced to the compounds of formula (I) which contain the building block [(R 4 f SiO (4-f) / 2 ] g do not have. If the module [(R 4fSiO(4-f) / 2]g, the effect according to the invention is achieved more pronouncedly than if this building block is present. In formula (I), the radicals R can be identical or different radicals and represent either a hydrogen radical or a monovalent Si-C-bonded, optionally heteroatom-substituted organic hydrocarbon radical having 1 to 18 C atoms, preferably having 1 to 12 C atoms, particularly preferably having 1 to 9 C atoms, in particular having 1 to 6 C atoms, which can also be an unsaturated hydrocarbon radical. The smaller the hydrocarbon radical R, the easier the steric access of the copper surface to the Si-Si framework bonds and the easier the effect according to the invention is achieved. Therefore, short hydrocarbon radicals are particularly preferred. Preferably, the radicals R are not substituted by heteroatoms. If heteroatoms are present in the radicals R, these are oxygen atoms or silicon atoms, preferably silicon atoms.The R radicals are always Si-C bonded and not bonded to the Si atom via an oxygen atom. The radicals R1, R2, R3, and R4 independently of one another represent a hydrogen radical or an optionally unsaturated Si-C bonded C1-C18 hydrocarbon radical, preferably a C1-C12, particularly preferably a C1-C9, in particular a C1-C6 hydrocarbon radical, which may optionally be substituted by heteroatoms, or a C1-C12, preferably C1-C9, in particular C1-C6, hydrocarbon radical bonded via an oxygen atom and optionally containing heteroatoms, or a silanol radical. 1 , R 2 , R 3 and R 4 can each assume their meaning independently of each other, so that several residues R 1 , R 2 , R 3 and R 4which are bonded to the same silicon atom, can represent different residues from the defined group. Among the hydrocarbon residues, small hydrocarbon residues are preferred, as they allow steric access of the copper surface to the framework-forming Si-Si bonds more easily. The heteroatoms are exclusively oxygen or silicon atoms, whereby several oxygen atoms cannot be bonded to one another in an uninterrupted sequence, but several oxygen atoms are always separated from one another by carbon atoms or hydrocarbon groups, and in particular, no Si-O-Si bonds or Si-OC bonds are present in the residues R1, R2, R3, and R4 due to direct bonding of Si atoms to oxygen atoms in the residues. Bonds of the type Si-Si and Si-C are present in the residues R 1 , R 2 and R 3permissible, wherein at least 2 Si atoms, preferably at least 3, in particular at least 4 Si atoms in the sequences of the radicals R containing Si-Si bonds 1 , R 2 , R 3 and R 4 must be directly bonded to one another. All silicon atoms in the compounds of formula (I) are tetravalent. In principle, the inventive effect of the adhesion-promoting interaction between the binders according to the invention and the copper surface can also be achieved if heteroatoms other than oxygen and / or silicon are present in the radicals R, R 1 , R 2 , R 3 and R 4are present, however, the then also necessary inventive condition of a low dielectric loss factor can no longer be achieved to the required extent. This is already made more difficult with oxygen atoms as heteroatoms. Therefore, it is particularly preferred according to the invention that no heteroatoms or at most Si atoms are present as heteroatoms in the radicals R, R 1 , R 2 , R 3 and R 4are present. Si-O-bonded radicals R1, R2, R3 and R4 such as the hydroxyl radical, alkoxy radicals, aryloxy radicals or alkaryloxy radicals do not cause any detectable adhesion effect in the compounds of formula (I) according to the invention. This means that they do not contribute to the inventive effect. Due to their polarity, they increase the dielectric loss factors, which is undesirable in the intended application. Since oxygen atoms cannot always be completely excluded for synthesis reasons, they are the only Wa 12335-S / Wi 37 heteroatoms, apart from silicon, that are present in the radicals R, R 1 , R 2 , R 3 and R 4are included. All other heteroatoms, in particular nitrogen, phosphorus, and sulfur, can be sufficiently well avoided and are excluded from the scope of the invention, since they could increase the dielectric loss factor through polarity and generally do so. The adhesion-promoting effect is also achieved in the presence of these heteroatoms; however, the object of the invention is to achieve a combined effect of a low dielectric loss factor and good copper adhesion for high-frequency applications. For this combined property profile, said heteroatoms are counterproductive and therefore excluded from the scope of the invention. Hydroxyl radicals, alkoxy radicals, aryloxy radicals, or alkaryloxy radicals, as well as the Si-O-Si framework units, are therefore acceptable within certain tolerances, but are neither necessary for achieving the inventive effect nor beneficial in the intended application.Therefore, like the Si-O-Si framework units, they are only included within the scope of the invention within narrow limits. Si-O-bonded radicals R are preferred. 1 , R 2 , R 3 and R 4 are present only in an amount corresponding to the synthesis-related unavoidable minimum. Depending on the chosen synthesis method, this is, based on the total number of all radicals R, R1, R2, R3 and R4 as 100 mol%, at most 15 mol%, preferably at most 12 mol%, particularly preferably at most 10 mol%, in particular at most 6 mol%. In the optimal embodiment of the invention, it is particularly preferred that no Si-O-bonded radicals R 1 , R 2 , R 3 and R 4 are present, which means that they are below the detection limit of the 1H-NMR method described below. It is further preferred that in the residues R 1 , R 2 , R 3 and R 4no oxygen atoms are present. Y denotes a di- to twelve-valent aromatic, alkylaromatic, cycloalkylaromatic or a di- to twelve-valent aliphatic or cycloaliphatic radical having 1 to 48 C atoms, which is free of heteroatoms, where Y may also contain olefinically or acetylenically unsaturated functional groups. The radical Y is always bonded to the silicon atoms bridged by it via Si-C bonding. Y preferably denotes a di- to twelve-valent aromatic, alkylaromatic, cycloalkylaromatic radical. It is preferred that the radical Y is di-, tri-, or tetravalent, in particular divalent. Several radicals Y can have their meaning independently of one another. Y is preferably a bridging organic, preferably an aromatic, aliphatic, or alkylaromatic unit having 1 to 24 C atoms. Preferred bridging radicals Y are the phenylene radical of the form

[0002] Wa 12335-S / Wi 39 H , or an alkanediyl, alkenediyl and alkynediyl radical such as the methylene radical, the methine radical, the tetravalent carbon, the 1,1-ethanediyl and the 1,2-ethanediyl group, the 1,4-butanediyl and the 1,3-butanediyl group, the 1,5-pentanediyl, 1,6-hexanediyl, 1,7-heptanediyl, 1,8-octanediyl, 1,9-nonadiyl, 1,10-decanediyl, 1,11-undecanediyl and the 1,12-dodecanediyl group, the 1,2-diphenylethanediyl group, the 1,2-phenylethanediyl group, the 1,2-cyclohexylethanediyl group. If a linear bridging unit has more than one carbon atom and the substitution pattern allows it, each of these groups can act as a bridge not only through alpha-omega connectivity, i.e. bridging through the first and last atom of a linear unit, but also through any other connectivity, i.e. the use of other chain carbon atoms.Furthermore, typical examples include not only the linear representatives of the aforementioned bridging hydrocarbons, but also their isomers, which in turn can act as bridges in Wa 12335-S / Wi 40 by bonding different C atoms of the hydrocarbon structure to silicon atoms. Examples of particularly preferred radicals from the group of non-aromatic, heteroatom-free hydrocarbon radicals are -CH2CH2-, -CH(CH3)-, -CH=CH-, -C(=CH2)-, and -C≡C-. All lists are merely exemplary and should not be understood as limiting. Since the radical Y does not contribute to the adhesion effect according to the invention, the permissible amount of bridging radicals Y is limited. Based on the amount of all building blocks of formula (I), i.e. RaR1bSi, (SiR2cR3d), (R4fSiO(4-f) / 2 and Y as 100%, the proportion of building blocks Y is at most 25%, preferably at most 15%, in particular 0%.In formula (I), a represents a number with a value of 0, 1, 2, or 3, where the indices a can assume their meaning independently of one another, so that different a can independently represent different values ​​within the specified value range. b represents a number with a value of at most 3 - a. The sum a + b has a value of 0, 1, 2, or 3. This means that the Si atom carrying the radicals R and R1 has up to four free valences, with which it can be bonded to neighboring Si atoms, since, as already stated above, all Si atoms are always tetravalent. In order to saturate all four valences for a + b = 0, the Si atom of the building block RaR1bSi can bond to four Si atoms of the neighboring building block SiR. 2 cR 3d bonded. Likewise, the Si atom of the building group RaR1bSi can be bonded to 1, 2 Wa 12335-S / Wi 41 or 3 neighboring Si atoms, depending on the value of the sum a + b. It is preferred that the sum a + b has the value 1, 2 or 3, in particular the values ​​2 and 3 are preferred for a + b. c has a value of 0, 1 or 2, d has the values ​​0 or 1, and the sum c + d can assume the values ​​0, 1 or 2. In a preferred embodiment, the sum c + d takes up at most 50% of all cases (ie all units [(SiR 2 c R 3 d )] e )has the value 0, preferably in at most 30%, particularly preferably in at most 20% and especially in at most 5% of all cases. Preferably, c + d has the values ​​1 or 2. This means that the Si atom of the SiR 2 c R 3 dpreferably carry one or two organic residues and can be bonded to two or three neighboring Si atoms, so that the condition is met that the Si atom of the SiR 2 c R 3 d is tetravalent and at most 50% of all Si atoms of the building groupSiR 2 cR 3 d are bonded to four neighboring Si atoms. e has a value from 1 to 500, preferably from 2 to 400, particularly preferably from 3 to 300, in particular from 4 to 250. If e has the minimum value of 1, a secondary condition is that g is simultaneously 0, since otherwise at least 3 Si atoms cannot be bonded to one another in an uninterrupted row. Preferably, e > 1. The building blocks [(SiR2cR3d)]e can be bonded to one another or, depending on the value of the sum Wa 12335-S / Wi 42 a + b, several building blocks [(SiR 2 c R 3 d )] ebonded to the Si atom of the RaR1bSi building block, as discussed above, to ensure the tetravalence of all Si atoms. It is therefore particularly according to the invention that the adhesion-promoting binders of the formula (I) are not only linear chains, but are also branched, i.e., comprise network-like three-dimensional structures, as are otherwise known from silicone resins, which, however, in contrast to the polysilanes according to the invention, always have oxygen atoms between the Si atoms as a framework component. f denotes a number with a value of 0, 1, 2 or 3. g denotes an integer with a value of 0 to 200, preferably 0 to 100, particularly preferably 0 to 50, in particular 0, wherein the additional condition must be met that the proportion of the units [(R 4 fSiO(4-f) / 2]gin mol-% of the framework, i.e. the proportion of units of the form [(R 4 f SiO (4-f) / 2 ] gbased on all framework-forming units as 100 mol-% does not exceed 30 mol-%. The entire framework is composed of the two terminal units and the units of the formula [(SiR 2 c R 3 d )] e, whose proportion in the skeleton is determined by e. This gives rise to the condition for g g < [(e + 2) x 100 / 70] – (e + 2). If the calculation results in decimals, the maximum value for g must be rounded off to the next lowest whole number, regardless of the value of the decimal places. h means a number with the value 0 or 1, preferably 0. Wa 12335-S / Wi 43 If a divalent to twelve-valent radical Y is present, which for each valence also occupies a free valence of the silicon atoms to which it is bonded, then accordingly one valence on the silicon atoms bonded to Y is occupied by the bond to Y and not by another radical. It is always the case that each silicon atom is tetravalent.The adhesion-promoting binders of formula (I) according to the invention are thus either polyorganosilane-polyorganosiloxane copolymers with a significantly predominant polyorganosilane content, which, depending on whether radicals Y are present, may also contain carbosilane units, or, which is preferred, polyorganosilanes that optionally contain carbosilane units, or particularly preferably polyorganosilanes in whose framework the inventive effect is caused by Si-Si framework units, whereby in these units that are responsible for the inventive effect, at least 3 Si atoms must always be bonded to one another in an uninterrupted sequence. If desired, several compounds of formula (I) can be used in a mixture with one another. These can be several different polyorganosilanes or several different polyorganosilane-polyorganosiloxane copolymers, optionally containing carbosilane units.The effect according to the invention is based on the ability of pure copper to form bonding interactions with the Si-Si bonds of the compounds of formula (I) or the Si atoms of the silicon particles under suitable conditions, preferably forming copper silicide or copper silicide-like structures, i.e., structures containing Si-Cu bonds Wa 12335-S / Wi 44. Suitable conditions are elevated pressure and elevated temperatures, as detailed above. As a result, the compounds of formula (I) adhere to the copper due to a chemical bond between the adhesion-promoting binders according to the invention and the copper.If the adhesion-promoting binders according to the invention are used in a mixture with other organic or organosilicon polymers as binders for the production of the copper-clad laminate, their interaction with the binder matrix is ​​achieved either by their compatibility and miscibility with the binder mixture and consequently by the formation of interpenetrating networks or capillary interactions, or by chemical reactions with them by means of suitable functional groups on the compounds of formula (I), which can react with suitable functional groups of the other binder(s) during the curing of the other binder(s).There are fundamentally no restrictions on the permissible chemical reactions between the functional groups of the other polymers and those of the compounds of the adhesion-promoting polysilane binders of formula (I) according to the invention. However, in the target applications, the curing of the binder preferably occurs through radical reactions, which is why this reaction type is preferred according to the invention. Accordingly, the selection of functional groups, if such polysilanes of formula (I) are present, is preferably carried out such that they are capable of radical curing. In principle, there are no limits to the selection of functional groups. The limiting factor here is, at best, the purely chemical and technical feasibility of functional groups in Wa 12335-S / Wi 45, depending on the selected manufacturing process for the polysilanes of formula (I).It should be noted that the inventive effect is best achieved only on pure copper surfaces. Copper oxide layers produce the inventive effect only to a limited extent, and depending on the nature of the copper oxide layer, not at all. If necessary, a cleaning or other preparatory treatment of the copper surface intended for use must be carried out according to the prior art, particularly by pickling, in order to produce a pure copper surface. The subject matter of the invention is therefore the creation of adhesion on pure copper surfaces that are not coated with an oxide layer, or, in the case of copper surfaces coated with oxide components, on the portions of the same copper surfaces not coated with oxide, wherein the proportion of copper oxide-coated copper surface preferably amounts to a maximum of 30% of the total copper surface.Foreign elements typically present in suitable copper foils that do not preclude the use of the copper foil are C, N, P, Si, O, Cl, Zr, Al, Co, Mo, Cr, and Ni in amounts commonly used to passivate copper against oxidation, such as amounts of up to 100 atomic percent, preferably up to 75 atomic percent, in particular up to 50 atomic percent per species. This information is illustrative and not limiting, particularly with regard to future developments in copper surface technology. In case of doubt about the exact composition of the copper surface with regard to passivating foreign elements and their proportion, which may be difficult to determine with sufficient certainty, experimentation determines the usability of the respective foil. The copper foil as such, as well as the technology for its production, are not the subject of the invention.A key feature of copper foils is the sufficient availability of Cu atoms on the surface for the inventive interaction with the Si-Si bonds. The fact that short Si chains consisting of only two Si atoms do not produce the inventive effect is presumably due to the small Si-Si unit preventing copper access to the Si-Si bond due to the steric shielding of substituents bonded to the two Si atoms. As a result, no reaction of the copper with the Si-Si bond is possible, and the inventive effect is not achieved. The longer the Si-Si chains and the smaller the Si-bonded substituents along the chain, the better the inventive effect is achieved. Hydrogen atoms are therefore ideal Si-bonded substituents for the inventive effect. The larger the substituent, the more difficult it becomes for the copper to reach the Si-Si bonds.Examples of R, R1, R2, R3 and R4, in addition to the hydrogen radical, are saturated or unsaturated hydrocarbon radicals which may contain aromatic or aliphatic double bonds, e.g. alkyl radicals such as methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, tert-butyl, n-pentyl, isopentyl, neo-pentyl and tert-butyl.- Pentyl radical, hexyl radicals such as the n-hexyl radical, heptyl radicals such as the n-heptyl radical, octyl radicals such as the n-octyl radical and iso-octyl radicals such as the 2, 2, 4-trimethylpentyl- Wa 12335-S / Wi 47 and the 2-ethylhexyl radical, nonyl radicals such as the n-nonyl radical, decyl radicals such as the n-decyl radical, dodecyl radicals such as the n-dodecyl radical, tetradecyl radicals such as the n-tetradecyl radical, hexadecyl radicals such as the n-hexadecyl radical and octadecyl radicals such as the n-octadecyl radical, cycloalkyl radicals such as cyclopentyl, cyclohexyl and 4-ethylcyclohexyl radical, Cycloheptyl radicals, norbornyl radicals, and methylcyclohexyl radicals; aryl radicals such as phenyl, biphenyl, naphthyl, anthryl, and phenanthryl radicals; alkaryl radicals such as o-, m-, and p-tolyl radicals, xylyl radicals, and ethylphenyl radicals; aralkyl radicals such as benzyl; alkenyl radicals such as 7-octenyl, 5-hexenyl, 3-butenyl, allyl, and vinyl radicals, as well as alpha- and ß-phenylethyl radicals. Heteroatoms present in the radicals R, R. 1 , R 2 , R 3 and R 4may be present are oxygen atoms or silicon atoms. The latter are preferred. Examples of organic radicals containing heteroatoms are R, R 1R2, R3, and R4 are radicals containing acryloyloxy or methacryloyloxy radicals of acrylic acid or methacrylic acid, as well as the acrylic acid esters or methacrylic acid esters of unbranched or branched alcohols having 1 to 15 carbon atoms. Preferred such radicals are those derived from methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, propyl acrylate, propyl methacrylate, n-butyl acrylate, n-butyl methacrylate, isobutyl acrylate, isobutyl methacrylate, t-butyl acrylate, t-butyl methacrylate, 2-ethylhexyl acrylate, and norbornyl acrylate. Methyl acrylate, methyl methacrylate, n-butyl acrylate, isobutyl acrylate, t-butyl acrylate, 2-ethylhexyl acrylate, and norbornyl acrylate are particularly preferred.These radicals are preferably not bonded directly to the silicon atom, but rather they are preferably bonded via a Wa 12335-S / Wi 48 hydrocarbon spacer, which can comprise 1 to 12 carbon atoms, preferably comprising 1 or 3 carbon atoms and comprising no further heteroatoms apart from the heteroatoms contained in the acryloyloxy or methacryloyloxy radical. Further examples of heteroatom-containing radicals R1, R2, R3 and R4 are the methoxy, ethoxy, propoxy, butoxy, pentoxy and octyloxy radicals, which can be present in branched form in addition to their linear forms, and furthermore the phenoxy radical.Examples of radicals R1, R2, R3 and R4 containing silicon as a heteroatom are, for example, radicals of the form: -(CH2)3-Si(CH3)2-CH2-CH2-Si(CH3)2-Si(CH3)3-(CH2)3-Si(CH3)2-CH2-CH2-Si(CH3)2[Si(CH3)2]5Si(CH3)3 -(CH2)3-Si(CH3)2-Si(H)(CH3)-Si(CH3)3-(CH2)3-Si(CH3)2-[Si(H)(CH3)]4-Si(CH3)3-(CH2)3-Si(CH3)2-CH2-CH2-Si(CH3)2-Si(CH=CH2)(CH3)2 -(CH2)3-[Si(C6H5)(CH3)]3-Si(CH3)2-Si(CH=CH2)(CH3)2-(CH2)3-[Si(C6H5)2]5-Si(CH3)2-Si(CH=CH2)(CH3)2 -(CH2)3-Si(CH3)2-Si(CH3)2(CH2-CH2=CH2) -(CH2)3-Si(CH3)2-[Si(CH3)2]6Si(CH3)2(CH2-CH2=CH2) -(CH2)3-[Si(CH3)2]3-Si(CH3)2(CH2-CH2=CH2) -(CH2)3-Si(CH3)2-CH2-CH2-Si(CH3)2(CH2-CH2=CH2) -(CH2)3-Si(CH3)2-CH2-CH2-Si(CH3)(CH2-CH2=CH2)-Si(CH3)3 -(CH2)3-Si(CH3)2-Si(CH3)(CH2-CH2=CH2)-Si(CH=CH2)(CH3)2 -(CH2)3-Si(CH3)2-CH2-CH2-Si(CH3)(CH2=CH2)-Si(CH=CH2)(CH3)2, which can be introduced, for example, by hydrosilylation of a vinyl-terminated component with a Si-H-functional component.Wa 12335-S / Wi 49 All lists are merely illustrative and not to be understood as limiting. The production of adhesion-promoting preparations using one or more types of the silicon particles according to the invention or using one or more compounds of formula (I) or mixtures thereof is typically carried out by dissolving, mixing, or dispersing one or more types of silicon particles, for example, differing in their D50 values, with one or more polysilanes of formula (I) in a matrix. The matrix can be a solvent, a reactive diluent, or another binder, or a mixture of several solvents, several reactive diluents, or several other binders, or a mixture of one or more different representatives of these three groups within one another, if appropriate.with further formulation components, depending on whether the process according to the invention is carried out as a priming process or as a binder process. The solvents used are preferably aromatic solvents such as toluene, xylene isomers, ethylbenzene, diethylbenzene isomers, single-variety or as a mixture, or aliphatic or cycloaliphatic ethers such as diethyl ether, methyl tert-butyl ether, methyl cyclopentyl ether, tetrahydrofuran, 2-methyltetrahydrofuran, aromatic ethers, preferably anisole (methylphenyl ether) or 1,4-dioxane. Ketones are also preferred, especially methyl ethyl ketone, acetone, and cyclohexanone, although these, like all other lists of examples in the present text, are to be understood as illustrative and not restrictive.Wa 12335-S / Wi 50Typical and preferred reactive diluents are radically curable low-viscosity liquids such as divinylbenzene isomers, diallylbenzene isomers, styrene or 1,4-bis(dimethylvinylsilyl)benzene and the vinyl, allyl and alkyl esters of acrylic acid and methacrylic acid. Another radically curable component, which is preferably used dissolved in a solvent and is counted among the reactive diluents in this dosage form, is triallyl isocyanurate and triallyl cyanurate, which are each a solid at room temperature of 23°C and a pressure of 1013 mbar. Examples of preferred further binders (also referred to as matrix binders) are those which are known to allow low dielectric loss factors to be achieved, such as optionally olefinically unsaturated, chemically curable polyphenylene ethers, bismaleimides, bismaleimide triazines, optionallyolefinically unsaturated hydrocarbon polymers, polyorganosiloxane resins and polycarbosilanes, as well as thermoplastic polymers such as polytetrafluoroethylene, polyetheretherketone, non-functional polyphenylene ethers, and non-functional hydrocarbon polymers. According to the invention, it is preferred that the proportion of binders other than those according to formula (I) according to the invention does not exceed 70%. This value is based on the sum of pure solvent-free binders as 100%. It is particularly preferred that the proportion of binder according to formula (I) according to the invention in the preparation with other binders in this sense is at least 40%, in particular at least 50%. In the most preferred embodiment of the invention, the binder according to formula (I) according to the invention is used as the sole binder. In this application form, the adhesion-promoting effect is most pronounced.This applies in particular to the process according to the invention in its embodiment as a priming process. If the process according to the invention is used as a priming process, generally only reactive diluents or mixtures thereof are used apart from the solvents. Other binders are possible, but are not preferred when the process according to the invention is used as a priming process. Furthermore, generally no further components are used in the priming process. The desired properties of the preparations according to the invention intended as a primer, such as solids content and viscosity, are adjusted by a suitable mixing ratio of these components in which the silicon particles according to the invention and the polysilanes according to the invention of the formula (I) are dissolved or dispersed.If the process according to the invention is carried out in the variant as a binder process, the silicon particles according to the invention and / or polysilanes of formula (I) are incorporated into the binder matrix intended for the production of the copper-clad laminate, wherein, in addition to solvents or reactive diluents and binders, further components such as fillers or functional additives are generally used. The solubility of the polysilanes of formula (I) in the matrix is ​​not necessarily a prerequisite for achieving the adhesion effect according to the invention. The silicon particles according to the invention are naturally not soluble, but must be dispersed in the binder matrix. A uniform distribution Wa 12335-S / Wi 52 of the silicon particles according to the invention and the polysilanes of formula (I), for example as a suspension, is sufficient. The polysilanes of formula (I) can melt and form a film under the curing conditions.Matrix materials with which the polysilanes of formula (I) react in an uncontrolled manner are fundamentally unsuitable and should be avoided, since unwanted reactions result in a conversion of the original binders of formula (I) according to the invention, which means they are no longer necessarily present in a form effective according to the invention. Care must be taken to ensure that the silicon particles of the invention and the polysilanes of formula (I) are mixed, dissolved, or dispersed chemically unchanged without any material transformation. Chemical reactions are permissible during curing, provided the thermoset binder preparations are involved. In this case, a reaction between the polysilanes of formula (I) according to the invention and the silicon particles, provided they are surface-functionalized, is helpful and desirable for optimal interaction with the binder matrix. Mixing orDissolving or dispersing can be carried out using known mixing processes according to the prior art. The polysilanes of formula (I) according to the invention can be prepared by various methods. In particular, alkali metal-based processes are used, as described, for example, in US2015122149, and processes using catalysts consisting of a combination of magnesium with lithium chloride and Lewis acids such as iron(II) chloride or zinc chloride, as described in "MaterialSciences and Applications, 2015, 6, 576-590" and in "Zeitschrift für allgemeine und anorganische Chemie, Volume 288, Wa 12335-S / Wi 53 November 1956, 1-8." In principle, all prior art processes are applicable in the present case.Since the application of corresponding methods is accessible and plausible to the person skilled in the art from the respective teachings available, only the procedure based on "Material Sciences and Applications, 2015, 6, 576-590" is described in more detail here for the purpose of illustrating and fully describing the claimed novel prior art, consisting of the inventive use of the polysilanes according to formula (I), since this method is also used in the examples. The method itself, as described in "Material Sciences and Applications, 2015, 6, 576-590," is not claimed as already known prior art and is not the subject of the invention.However, it has been shown that a modification of the process according to "Material Sciences and Applications, 2015, 6, 576-590," which cannot be derived from the existing prior art, is particularly advantageous for introducing functional groups and represents a simplification compared to the process according to "Material Sciences and Applications, 2015, 6, 576-590." This variant is therefore claimed as being inventive and new. The polysilanes according to formula (I) according to the invention are obtained according to "Material Sciences and Applications, 2015, 6, 576-590" in a process that essentially comprises two steps. In the first step, halogenated silanes of the formulas (II) or (III) are reacted with magnesium, lithium chloride, and iron(II) or zinc chloride in an ether as solvent.In the second step, the reaction mixture is hydrolytically worked up and the volatile constituents are removed, if desired and advantageous for further use. Wa 12335-S / Wi 54 In the new inventive variant, an intermediate step is additionally inserted after step 1, the details and advantages of which are described below, before further workup is carried out according to the second step described here. The invention thus further relates to a process for preparing the organosilicon compound of the formula (I) according to the invention, comprising the following steps in the given order: (a) reacting at least one silane of the formula (II)R. 5 i Si(Hal) 4-i (II), where Hal represents a halide radical, preferably a chloride radical, i is an integer of 0, 1, 2 or 3 and R 5 independently of one another one or more radicals R, R 1 , R2 , R 3 or R 4 means, optionally together with at least one polysilane of the formula (III) (SiR 5 j (Hal) 3-j )(SiR 5 j (Hal) 2-j ) k (SiR 5 j (Hal) 3-j )Y h (III), where Wa 12335-S / Wi 55 R5, Hal, Y and h each independently have the meanings already given above, j each independently represents a number with a value of 0, 1 or 2 and does not represent an integer with a value of 0 to 10, with at least one reagent selected from magnesium and the metal halides of lithium, iron or zinc; (b) reacting the reaction mixture obtained after step (a) with at least one compound according to general formula (IV): XR 6(IV), where R6 is an alkyl or alkenyl group having 1 to 12 C atoms and X represents a leaving group Met- or Hal'- or Hal'-Met-, which is cleaved off during the reaction itself and the group R 6 to Si-Hal' groups to form a group Si-R 6where Met represents at least one metal atom, preferably selected from Li, Mg, Cu and Zn, and Hal' represents a halogen atom, preferably a chlorine or bromine atom, in particular a chlorine atom, Wa 12335-S / Wi 56 optionally together with at least one aromatic vinyl compound, preferably selected from styrene, divinylbenzene isomers, 3,4-methylenedioxyallylbenzene and trivinylbenzene isomers, and mixtures thereof; (c) hydrolytic workup of the reaction mixture obtained after step (b), for example by adding essentially water or dilute mineral acids, for example dilute hydrochloric acid; and (d) if necessary, removing volatile components, for example by thermal evaporation.The preferred values ​​for i for the individual building blocks of formula (I) result from the preferred values ​​of the indices a, b, c and d given above.In formula (III), in particular, if h = 0 and k = 0, formula (III) means disilanes.The radicals R5 assume their meaning independently of one another, so that the silanes of formula (III) do not have to be symmetrical and the same silicon atom can be occupied by different radicals, as for the radicals R, R. 1 , R 2 , R 3 or R 4are specified. If necessary, according to "Material Sciences and Applications, 2015, 6, 576-590," carbon bridges or polymeric hydrocarbon units can also be introduced between polysilane units in the first step by introducing styrene as an additional reagent after the halosilanes according to formula (II) and / or according to formula (III) have been reacted with magnesium and the metal halides of lithium, iron, or zinc. In this respect, a radical Y can also be introduced into the polysilane structure using the process according to "Material Sciences and Applications, 2015, 6, 576-590." However, to remain in accordance with the invention, the amount of styrene must be selected such that the conditions according to formula (I) apply to the resulting product, in particular that the polysilane content required by the invention with at least 3 Si-Si bonds in an uninterrupted sequence is achieved.As a novel and inventive modification of the process according to "Material Sciences and Applications, 2015, 6, 576-590," the additional use of an organic or organometallic compound of formula (IV) to finalize the reaction before hydrolysis has proven advantageous for introducing functional groups and reacting residual Si-Cl groups. By reducing the Si-Cl groups before hydrolysis, the proportion of potentially undesired Si-O units, both terminal Si-OH or Si-OC units and Si-O-Si framework units, is reduced. This is an explicit advantage of the novel inventive procedure over the procedure according to "Material Sciences and Applications, 2015, 6, 576-590." A further advantage is that organometallic or, in particular, organic compounds of formula (IV) are commercially available in a much greater variety than there are similarly functionalized chlorosilanes.Therefore, this novel intermediate step according to the invention represents a simple and economical way to significantly expand the scope of obtainable polysilanes of formula (I) according to the invention. The use of the organic or organometallic compound of formula (IV) takes place after the reaction of the halosilanes of formulas (II) and / or (III) and before hydrolysis, and can, if desired, be combined with the reaction with Wa 12335-S / Wi 58 styrene. The addition of styrene and an organic or organometallic compound of formula (IV) can take place simultaneously or sequentially. In the case of sequential addition of styrene and the organic or organometallic compound of formula (IV), either styrene can be added first, followed by the organic or organometallic compound of formula (IV), or vice versa. The reaction with styrene is explained in "Material Sciences and Applications, 2015, 6, 576-590."Preferred radicals X in formula (IV) are Met or Hal, where Met is a metal-containing group and Hal is a halogen atom, preferably a chlorine or bromine atom, especially a chlorine atom. The effect of the organic halogen compound of formula (IV) is based on the fact that with excess magnesium, a highly reactive alkyl or alkenyl halide Grignard is formed, which reacts with Si-Cl groups to form magnesium halide and a Si-alkyl or Si-alkenyl group. If the alkenyl group is a radically curable alkenyl group, a functional group for radical crosslinking is additionally introduced. What is surprising in this context is how simply and selectively this reaction occurs in the complex reaction mixture and that it is thus possible in a simple manner to react the remaining Si-Cl bonds present, which are naturally the least reactive of their type in the preparation, in order to reduce the residual Si-Cl content.With regard to the economic optimization of the reaction with regard to shortened residence times in a reactor, this approach offers considerable potential and thus makes a significant contribution to the economical implementation of polyorganosilanes of the formula Wa 12335-S / Wi 59(I). Typical examples of radicals R6 are the alkyl and alkenyl groups, which have already been mentioned as examples of the radicals R. The vinyl and allyl radicals are particularly preferred. Met denotes a metal atom-containing radical which contains at least one or more metal atoms, which may be identical or different, and may contain further atoms. The radical Met preferably contains at least one metal atom selected from Li, Mg, Cu, and Zn. Examples of suitable preferred radicals Met are Li, Mg-Hal, CuLi, CuMg-Hal, Cu(CN)ZnI, Cu, CuLi*CuCN, Zn, and Zn-Hal, where Hal has the meaning given above. Examples of suitable compounds of the formula Met-R. 6are lithium-organic compounds of the form Li-R 6 , magnesium-organic compounds of the form Hal-Mg-R 6 , so-called halogen Grignard compounds, LiCu(R 6 )2, so-called Gilman cuprates, IMgCu(R 6 )2, so-called Normant cuprates, IZn(CN)CuR 6 , so-called Knochel cuprates, monoalkyl copper compounds of the form Cu-R 6 , cynano-cuprates of the form CNCu*LiCuR 6 , diorganozinc compounds of the form Zn(R 6 )2 and halogenozinc compounds of the form Hal-Zn-R6, where Hal has the meaning given above. Particularly preferred compounds of the formula Met-R6 are Li-R 6 and Hal-Mg-R 6The reaction is carried out in a solvent, particularly in the presence of elemental magnesium, lithium chloride, and zinc chloride, and the reaction must be carried out anhydrous, i.e., water is specifically excluded by suitable state-of-the-art measures. This means that the solvents, depending on their type, are dried according to the state of the art before use. Wa 12335-S / Wi 60 Typical examples of silanes of the formula (II) are methyltrichlorosilane, dimethyldichlorosilane, dimethyldichlorosilane, trimethylchlorosilane, phenyltrichlorosilane, phenylmethyldichlorosilane, diphenyldichlorosilane, triphenylchlorosilane, diphenylmethylchlorosilane, phenyldimethylchlorosilane, vinyltrichlorosilane, methylvinyldichlorosilane, vinyldimethylchlorosilane, trichlorosilane, methyldichlorosilane, dimethylchlorosilane, ethyltrichlorosilane, and tetrachlorosilane. Particularly preferred silanes of formula (II) are methyltrichlorosilane, dimethyldichlorosilane, vinyltrichlorosilane, vinyldimethylchlorosilane,Methylvinyldichlorosilane, phenyltrichlorosilane, phenylmethyldichlorosilane, and methyldichlorosilane. The silanes of formula (II) can also be used as mixtures. For example, it is preferred that mixtures of silanes used for chain formation and crosslinking be mixed with terminating silanes. The list of examples is illustrative and not restrictive. Typical examples of disilanes of formula (III) are hexachlorodisilane, dimethyltetrachlorodisilane, tetramethyldichlorodisilane, dimethylvinyltrichlorodisilane, diphenyltetrachlorodisilane, diphenylvinyltrichlorodisilane, tetravinyldichlorodisilane, divinyltetrachlorodisilane, and trimethyldichlorodisilane, where the methyl, phenyl, ethyl, vinyl, and Si-H groups, and the chlorine groups, can be randomly distributed among the silicon atoms, subject to the rule that each Si atom is tetravalent. The list is illustrative,not limiting. Typical examples of hydrocarbon-bridged silanes according to formula (III) are Wa 12335-S / Wi 61 Cl(CH3)2Si-CH2CH2-Si(CH3)2Cl, Cl2(CH3)Si-CH2CH2-Si(CH3)2Cl, Cl2(CH3)Si-C6H4-Si(CH3)2Cl, Cl2(CH3)Si-C6H3(CH=CH2)-Si(CH3)2Cl, Cl2(CH3)Si-CH2CH2-Si(CH3)Cl2, Cl3Si-CH2CH2-SiCl3, Cl(CH3)2Si-CH=CH-Si(CH3)2Cl, Cl2(CH3)Si-CH=CH-Si(CH3)2Cl, Cl2(CH3)Si-CH=CH-Si(CH3)Cl2, Cl3Si-CH=CH-SiCl3, Cl(CH3)2Si-(CH2)3(C6H4)(CH2)3-Si(CH3)2Cl, Cl2(CH3)Si-(CH2)3(C6H4)(CH2)3-Si(CH3)2Cl, Cl2(CH3)Si-(CH2)3(C6H4)(CH2)3-Si(CH3)Cl2, Cl3Si-(CH2)3(C6H4)(CH2)3-SiCl3, Cl(CH3)Si-Si(CH3)2-(CH2)3(C6H4)(CH2)3-(CH3)2Si-Si(CH3)2Cl, Cl(CH3)2Si-(CH2)3(C6H4)-(C6H4)(CH2)3-Si(CH3)2Cl, Cl2(CH3)Si-(CH2)3(C6H4)-(C6H4)(CH2)3-Si(CH3)2Cl, Cl2(CH3)Si-(CH2)3(C6H4)-(C6H4)(CH2)3-Si(CH3)Cl2, Cl3Si-(CH2)3(C6H4)-(C6H4)(CH2)3-SiCl3, Cl(CH3)2Si-CH2CH2-Si(CH3)(CH=CH2)Cl, Cl(CH3)(CH=CH2)Si-CH2CH2-Si(CH3)(CH=CH2)Cl, Cl(CH3)(CH=CH2)Si-(CH2)3(C6H4)(CH2)3-Si(CH3)(CH=CH2)Cl, Cl(CH=CH2)2Si-(CH2)3(C6H4)(CH2)3-Si(CH=CH2)2Cl,Cl(CH3)(H)Si-(CH2)3(C6H4)(CH2)3-Si(CH3)(H)Cl, Cl(H)2Si-(CH2)3(C6H4)(CH2)3-Si(H)2Cl. This list is illustrative and not limiting. Lithium chloride and zinc chloride are hygroscopic. Since water must be avoided in the synthesis, these two metal chlorides, which are used as commercially available powders, are heated to at least 100°C in a Wa 12335-S / Wi 62 vacuum of < 10. -1mbar for a sufficient time, e.g. 24 hours. The magnesium, as a metal, is advantageously used in forms with a large surface area, e.g. in the form of chips, grains or powder. The magnesium is preferably used in a minimum amount which results from the following equation: p = (q / 3)+r. Where p is the number of moles of magnesium, q is the number of halogen equivalents from the compounds (II), (III) and (IV) and r is a value between 0 and half the amount of halogen equivalents from the compounds (II), (III) and (IV) used in each case, the value 0 being included for r. That is, r is 0 or greater than zero and has a maximum value of q / 2. To facilitate the reaction, solvents which are inert towards the reactants are used in the preferred process for preparing the adhesion-promoting polysilanes of the formula (I) according to the invention.In principle, the substances usually used as inert solvents in the reaction of metals with organohalogen compounds, in particular ethers such as diethyl ether, di-. n butyl ether, tert.Butyl methyl ether, tetrahydrofuran, 1,4-dioxane, or hexamethylphosphoric triamide can be used, optionally also in admixture with one another and optionally also in admixture with other inert solvents such as toluene, xylene or ethylbenzene. The preferred process for preparing the adhesion-promoting binders according to the invention is preferably carried out at temperatures of -78°C to 150°C under atmospheric pressure. If necessary, higher or lower pressures can also be used. The process is expediently carried out in an atmosphere which is inert towards the reactants and consists of Wa 12335-S / Wi 63 nitrogen or argon, in particular the access of water as a liquid, vapor or coating on vessels and the magnesium is to be excluded as best as possible by applying suitable measures according to the state of the art, such as baking under vacuum.The process can be carried out stepwise, by first reacting the components of formula (II) and / or formula (III) with magnesium, lithium chloride, and zinc chloride before adding the other component, or it can be carried out in a single step, by simultaneously reacting all components of formula (II) and formula (III). The reaction with the halides of formula (IV) always takes place as the last step before hydrolysis. To activate the magnesium, it is advantageous to first combine a portion of component (II) or (III), for example 10% by weight of the total amount of component (II) or (III), with the magnesium. The isolation of the reaction products obtained in the preferred process can be carried out in the same manner as is customary for isolating reaction products obtained in organometallic syntheses, in particular Grignard syntheses.The resulting reaction mixtures are preferably mixed with water at 0 to 30°C. Since hydrochloric acid is formed from any remaining Si-Cl groups and silanol groups are created, which lead to condensation and the formation of Si-O-Si units, both of which are undesirable, the most complete conversion possible of all halogen radicals involved in the reaction must be ensured before workup. Wa 12335-S / Wi 64 If necessary, an acid can be used for workup, such as hydrochloric acid, to adjust the pH or to promote the formation of magnesium halides. The water-soluble salt constituents are extracted with water, and solids such as any insoluble fractions of magnesium or magnesium salts are removed by prior art processes, for example by filtration or centrifugation.The volatile components of the reaction mixture are removed using state-of-the-art methods, such as continuous or discontinuous distillation, to obtain the reaction products in pure form. If the reaction products are desired as a preparation in a solvent, they can be subsequently dissolved in the solvent of choice or obtained directly from the reaction solvent as the desired preparation by solvent exchange. The solvent exchange is also carried out using state-of-the-art methods.If it is desired to further modify the adhesion-promoting binders according to the invention primarily obtained from the preferred process, for example by introducing functional groups that are not stable under the conditions of the Grignard synthesis, it may be advantageous to introduce suitable functional groups into the adhesion-promoting binder of the formula (I) according to the invention primarily obtained in the Grignard-analogous synthesis step. It should be noted here that the primarily obtained compounds of the formula (I) as such already fulfill all the features of the invention and are thus in accordance with the present invention. It is known from the prior art that the carbonyl groups of Wa 12335-S / Wi 65 aldehydes, ketones and carboxylic acids and their esters are converted to alcohols by Grignard reactions.Since this procedure could potentially jeopardize the economic viability of the process, it is not preferred, although it is fundamentally possible and therefore included in the invention. Possible chemical crosslinking reactions include known reactions according to the prior art, in particular radical crosslinking, which can be initiated using suitable radiation sources such as UV light as well as by unstable chemical compounds that decompose to form radicals, and addition crosslinking, for example, by hydrosilylation of the olefinically unsaturated group with an Si-H function in the presence of a suitable hydrosilylation catalyst. The Si-H functions can also be bound to the silphenylene polymers according to the invention.If the polysilanes of formula (I) according to the invention are chemically curable polysilanes, they contain, in order to achieve sufficient curing, an average of at least 1.0 functional groups per binder molecule of formula (I) used according to the invention. Preferably, an average of at least 1.1, in particular an average of at least 1.2, functional groups are present per silphenylene polymer molecule according to the invention. The functional groups can be different, so that, for example, some of the functional groups are an Si-H group and another part of the functional groups represents an olefinically unsaturated group that is radically curable or hydrosilylatable. Other combinations of complementary functional groups are also conceivable, where complementary means that the selected combinations of functional groups can react with one another.If only one type of Wa 12335-S / Wi 66 functional group is present, for example only olefinically or acetylenically unsaturated functional groups that are radically curable, the corresponding number of these functional groups must be present. In order to copolymerize to form a homogeneous matrix, it is important to ensure that the selected olefinic and acetylenic groups are sufficiently copolymerizable. The combination of olefinic groups that are not copolymerizable with one another is also possible, provided that the resulting matrix of two or more individual polymers remains compatible with one another and does not form separate phases that separate from one another in distinguishable domains. Examples of suitable initiators for starting radical polymerization include, in particular, examples from the field of organic peroxides, such as di-tert.- butylperoxid, Dilaurylperoxid, Dibenzoylperoxid, Dicumylperoxid, Cumylperoxyneodecanoat, tert- Butylperoxyneodecanoat, tert-Amylperoxypivalat, tert- Butylperoxypivalat, tert-Butylperoxyisobutyrat, tert- Butylperoxy-3,5,5-trimethylhexanoat, tert-Butylcumylperoxid, tert-Butylperoxyacetat, tert-Butylperoxybenzoat, 1,1-Ditert.- butylperoxycyclohexan, 2,2-Di(tert.-butylperoxy)butan, Bis(4- tert.-butylcyclohexyl)peroxydicarbonat, Hexadecylperoxydicarbonat, Tetradecylperoxydicarbonat, Dibenzylperoxidicarbonat, Diisopropylbenzol Dihydroperoxid, [1,3-Phenylenbis(1-methylethyliden)]bis[tert-butyl]peroxid, 2,5-Dimethyl-2,5-di-(tert-butylperoxy)hexan, Dicetylperoxydicarbonat, Acetylacetonperoxid, Acetylcyclohexansulfonylperoxid, tert.Amyl hydroperoxide, tert-amyl peroxy-2-ethylhexanoate, tert-amyl peroxy-2-ethylhexyl carbonate, tert-amyl peroxyisopropyl carbonate, tert-amyl peroxyneodecanate, tert-amyl peroxy-3,5,5-trimethylhexanoate, tert-butyl monoperoxymaleate; this list is only illustrative and not restrictive. If necessary, mixtures of different initiators can also be used for radical reactions. The suitability of an initiator or initiator mixture for radical reactions depends on its decomposition kinetics and the requirements to be met. With sufficient consideration of these general conditions, the skilled person will be able to select a suitable initiator. For preparations that contain silicon-bonded hydrogen in addition to olefinically and acetylenically unsaturated groups, curing by a hydrosilylation reaction is possible.Suitable catalysts for promoting the hydrosilylation reaction are the known catalysts from the prior art. Examples of such catalysts are compounds or complexes of the noble metal group containing platinum, ruthenium, iridium, rhodium, and palladium, preferably metal catalysts from the platinum group metals or compounds and complexes from the platinum group metals. Examples of such catalysts are metallic and finely divided platinum, which can be on supports such as silicon dioxide, aluminum oxide, or activated carbon, compounds or complexes of platinum such as platinum halides, e.g.PtCl4, H2PtCl6x6H2O, Na2PtCl4x4H2O, platinum-olefin complexes, platinum-alcohol complexes, platinum-alcoholate complexes, platinum-ether complexes, platinum-aldehyde complexes, platinum-ketone complexes, including reaction products of H2PtCl4x6H2O and cyclohexanone, platinum-vinyl-siloxane complexes, such as platinum-1,3-divinyl-1,1,3,3-tetramethyldisiloxane, with or without detectable inorganic halogen, bis-(gamma-picoline)platinum chloride, trimethylenedipyridineplatinum chloride, dicyclopentadieneplatinum dichloride, dimethylsulfoxyethenylplatinum(II) dichloride, cyclooctadieneplatinum dichloride, norbornadieneplatinum dichloride, gammapicolineplatinum dichloride, cyclopentadieneplatinum dichloride, Wa 12335-S / Wi 68 as well as reaction products of platinum tetrachloride with olefin and primary or secondary amine or primary and secondary amine such as the reaction product of platinum tetrachloride dissolved in 1-octene with sec-butylamine or ammonium platinum complexes.In a further embodiment of the process according to the invention, complexes of iridium with cyclooctadienes, such as µ-dichlorobis(cyclooctadiene)diiridium(I), are used. This list is merely illustrative and not restrictive. The development of hydrosilylation catalysts is a dynamic field of research that continually produces new, effective species that can naturally also be used here. The hydrosilylation catalyst is preferably a compound or complex of platinum, preferably platinum chlorides and platinum complexes, in particular platinum-olefin complexes and particularly preferably platinum-divinyltetramethyldisiloxane complexes. In the process according to the invention, the hydrosilylation catalyst is used in amounts of 2 to 250 ppm by weight, preferably in amounts of 3 to 150 ppm, in particular in amounts of 3 to 50 ppm.In a preferred embodiment, the preparations comprising the silicon particles according to the invention or the polysilanes of formula (I) are applied to a metal substrate in a third step. The silicon particles according to the invention and the polysilanes of formula (I) according to the invention are particularly suitable for use in binders and / or as adhesion promoters for the production of metal-clad laminates, in particular for electronic applications, in particular for metal-clad laminates and in particular for use in high-frequency applications, Wa 12335-S / Wi 69 very particularly those operating at frequencies of 1 GHz and above. Particular preference is given to the production of metal-clad electrical laminates, such as those used for the production of printed circuit boards in electronic devices, in particular for high-frequency applications. Said metal-clad electrical laminates may, but do not have to, contain reinforcing materials.This means that they can contain, for example, reinforcing fabrics such as fiber fabrics or nonwovens, or they can be free of them. If a reinforcing material is included, it is preferably arranged in layers. A reinforcing layer can be composed of a variety of different fibers. Such reinforcing layers help control shrinkage behavior and provide increased mechanical strength. If a reinforcing layer is used, the fibers forming this layer can be selected from a variety of different options. Non-limiting examples of such fibers are glass fibers such as E-glass fibers, S-glass fibers and D-glass fibers, silica fibers, polymer fibers such as polyetherimide fibers, polysulfone fibers, polyetherketone fibers, polyester fibers, polycarbonate fibers, aromatic polyamide fibers or liquid crystalline fibers. The fibers can have a diameter of 10 nm to 10 µm.The reinforcement layer has a thickness of at most 200 µm, preferably at most 150 µm. A preferred application is the use of the polysilanes of formula (I) as binders or cobinders together with organic binders for the production of metal-clad laminates from glass fiber composites for the further production of printed circuit boards. The preferred metal is copper. Wa 12335-S / Wi 70 For the inventive use of the polysilanes of formula (I), these can be used as the sole binder. They can also be used blended with organic monomers, oligomers, and polymers.Organic monomers, oligomers, and polymers typically used for this purpose include polyphenylene ethers, bismaleimides, bismaleimide triazine copolymers, hydrocarbon resins, both aliphatic such as polybutadiene, and aromatic such as polystyrene, as well as hybrid systems that have both aliphatic and aromatic character such as styrene-polyolefin copolymers, whereby the form of the copolymers is fundamentally not restricted, epoxy resins, cyanate ester resins, and optionally others, whereby the selection is to be understood as illustrative and not restrictive. Preferred organic monomers, oligomers, and polymers are oligomeric and polymeric polyphenylene ethers, monomeric, oligomeric, and polymeric bismaleimides, oligomeric and polymeric hydrocarbon resins, and bismaleimide triazine copolymers. The organic monomers, oligomers, and polymers can optionally be used mixed with one another.The proportion of organic monomers, oligomers and polymers in the preparations with the polysilanes of the formula (I), if the organic components are used, is between 10 and 90% based on the mixture of the polysilanes of the formula (I) and the organic monomers, oligomers and polymers as 100%, preferably 20 - 90%, in particular 30 - 80%. In addition, both the binders of the formula (I) and the mixtures thereof with organic monomers, oligomers or polymers can be dissolved in further organic monomers, optionally with olefinically or acetylenically unsaturated groups, as reactive diluents, such as, for example, Wa 12335-S / Wi 71 styrene, alpha methylstyrene, para-methylstyrene and vinylstyrene, chloro- and bromostyrene.Likewise, typical non-reactive solvents can be used to dissolve the binders of the formula (I) and optionally mixtures thereof with organic monomers, oligomers and polymers, such as, for example, aliphatic or aromatic solvents such as aliphatic mixtures with certain boiling ranges, toluene, xylene, ethylbenzene or mixtures of the same aromatics, ketones such as acetone, methyl ethyl ketone, cyclohexanone, carboxylic acid esters such as ethyl acetate, methyl acetate, ethyl formate, methyl formate, propionic acid methyl ester, propionic acid ethyl ester, wherein good solubility in particular of the mixtures of binders of the formula (I) with organic monomers, oligomers and polymers is most easily achieved in aromatic solvents such as toluene, xylene, ethylbenzene and mixtures thereof.In the event that the silicon particles according to the invention and the polysilanes of formula (I) are used in combination with an organic oligomer or polymer, or mixtures thereof, it is essential that the silicon particles and the polysilanes of formula (I) are compatible with the organic components of choice, i.e., dispersible or soluble therein. This is generally better achieved with polysilanes of formula (I) richer in phenyl, since phenyl groups increase compatibility with the organic components. In particular, with organic polymers richer in aromatics, such as polyphenylene ethers or aromatic hydrocarbon resins, polysilanes richer in aromatics of formula (I) should be used, with both the bridging aromatic groups and aromatic substituents terminally bonded to silyl units contributing to the compatibility adjustment.The exact amount of aromatic groups required to adjust the compatibility of the polysilanes of the formula (I) with a specific selection of organic binders Wa 12335-S / Wi 72 must be determined depending on the selection of organic binders. Just as it is possible to mix several organic polymers, which may be selected from different polymer classes, and use them in the binder preparation, it is also possible to combine several polysilanes of the formula (I) with one another in a binder preparation. This means that according to the invention, it is not only possible to use a single polysilane of the formula (I) as a binder, but also to combine several polysilanes of the formula (I) with one another to form a binder preparation. Likewise, according to the invention, it is only possible to combine one polysilane of the formula (I) with one or more organic polymers to form a binder preparation.It is also according to the invention to combine several polysilanes of formula (I) with one or more different organic polymers to form a binder preparation. The compatibility of one or more polysilanes of formula (I) or the dispersibility of the silicon particles according to the invention in one or more organic oligomers or polymers can be determined by mixing a mixture of the organic binder(s) with the binder(s) of formula (I), advantageously in a solvent that dissolves all selected components, then removing the solvent by prior art methods, for example by distillation or spray drying, and evaluating the resulting residue optically or with the aid of microscopic methods, optionally electron microscopic methods.Compatible mixtures can be recognized by the fact that no binder domains separate from the organic components and are recognizable as a separate phase. Dispersibility is indicated by the homogeneous appearance of the dispersed phase. Wa 12335-S / Wi 73 The use of further formulation components, such as additives, which may optionally also include silanes, such as antifoam and deaerating agents, wetting and dispersing agents, leveling agents, compatibilizers, adhesion promoters, curing initiators, catalysts, stabilizers, fillers including pigments, dyes, inhibitors, flame retardants, crosslinking aids, etc., is permitted according to the invention, and the selection of such components is fundamentally unlimited.In addition to compatibility tests for suitable miscibility, compatibility tests with regard to reactivity may also be required to prevent premature gelling and ensure that sufficiently rapid polymerization or copolymerization of all components is achieved during curing. Tests for adequate wetting and other properties, if applicable, must be considered and taken into account when developing the formulation.Examples of usable fillers are ceramic fillers such as silicas, for example precipitated silicas or pyrogenic silicas, which can be both hydrophilic and hydrophobic and are preferably hydrophobic and which can furthermore also be functionally and optionally reactively provided with organic groups on their surface, quartz, which can optionally be surface-treated or surface-functionalized so that it can carry reactive functional groups on the surface, aluminum oxides, aluminum hydroxides, calcium carbonate, talc, mica, clay, kaolin, magnesium sulfate, carbon black, titanium dioxide, zinc oxides, antimony trioxide, barium titanate, strontium titanate, corundum, wollastonite, zirconium tungstate, ceramic hollow spheres, aluminum nitride, silicon carbide, beryllium oxide, magnesium oxide, magnesium hydroxide, solid glass spheres, hollow glass spheres and Wa 12335-S / Wi 74 boron nitride.Core-shell particles made of various materials can be used as additional fillers, such as silicone resin spheres coated with silica on the surface, or polymer-coated elastomer particles. The elastomer particles may optionally also be silicone elastomers. A typical example of a surface coating of such an elastomer particle is a polymethyl methacrylate shell. The ceramic fillers preferably have particle sizes expressed as D. 90Value from 0.1 µm to 10 µm. Fillers are preferably present in amounts of 0.1 to 60 percent by weight, more preferably from 0.5 to 60 percent by weight, in particular from 1 to 60 percent by weight, based on the total binder formulation consisting of binder(s), reactive monomers, additives, and fillers as 100%. This means that the amount of any non-reactive solvent used is not counted. Among the fillers, those that are thermally conductive are particularly noteworthy. These are aluminum nitride, boron nitride, silicon carbide, diamond, graphite, beryllium oxide, zinc oxide, zirconium silicate, magnesium oxide, silicon oxide, and aluminum oxide. In principle, the binder preparations can contain flame-retardant additives in an amount of typically 5 to 25 percent by weight.However, a special feature of the polysilanes of formula (I) is that they reduce the need for flame-retardant additives, since the polysilanes of formula (I) themselves already exhibit flame-retardant properties. Polyorganosiloxanes and siloxanes are known to exhibit flame-retardant properties, which are also found in the inventive polysilanes of formula (I), so they can themselves be used as flame-retardant additives. It is therefore a particular advantage of the present invention that it succeeds in combining the function of the binder with the function of flame retardancy to produce Wa 12335-S / Wi 75. Depending on the amount of polysilanes of formula (I) used, the amount of flame-retardant additives can therefore be reduced.At an amount of at least 20 percent by weight based on the total mixture of all binders and reactive organic monomers used, the amount of flame-retardant additives is preferably only 0 to 10 percent by weight, particularly preferably 0 to 8 percent by weight, in particular 0 to 5 percent by weight, i.e. when using the polysilanes of the formula (I), depending on the choice of the additive and the amount used, it is possible to forgo the use of a flame-retardant additive. Typical examples of flame-retardant additives are hydrates of the metals Al, Mg, Ca, Fe, Zn, Ba, Cu or Ni and borates of Ba and Zn. The flame-retardant additives can be surface-treated, in which case they can optionally have reactive groups on the surface. The flame-retardant additives can also be halogenated organic flame-retardant additives, such as hexachloroendomethylenetetrahydrophthalic acid, tetrabromophthalic acid or dibromoneopentyl glycol.Examples of other flame-retardant additives include melamine cyanurate, phosphorus-containing components such as phosphinates, diphosphinates, phosphazenes, vinylphosphazenes, phosphonates, phosphaphenantrene oxides, and fine-grained melamine polyphosphates. Further examples of bromine-containing flame-retardant additives include bispentabromophenylethane, ethylenebistetrabromophthalimide, tetradecabromodiphenoxybenzene, decabromodiphenyl oxide, and brominated polysilsesquioxanes. Some flame-retardant additives enhance each other's effects synergistically. This is the case, for example, with the combination of halogenated flame retardant additives with antimony trioxide. Wa 12335-S / Wi 76 Further examples of other components are antioxidants, stabilizers against degradation by weathering, lubricants, plasticizers, coloring agents, phosphorescent or other agents for the purpose of marking and traceability and antistatic agents.The polysilanes of formula (I) are preferably crosslinked during the production of metal-clad laminates. Polyunsaturated, radically curable or hydrosilylatable monomers and oligomers, as illustrated in the following non-limiting examples, are used as crosslinking aids. These include, for example, diolefinically unsaturated components such as, for example, symmetrically olefinically unsaturated disubstituted disilanes, such as 1,1,2,2-tetramethyl-1,2-divinyldisilane, 1,1,2,2-tetramethyl-1,2-dipropylmethacryloyldisilane, diolefinically unsaturated disubstituted organic monomers or oligomers, such as, for example, diallyl-, divinyl-, diacryloyl-, or dimethacryloyl-substituted conjugated and non-conjugated dienes, such as 1,9-decadiene and 1,3-butadiene.This also includes triply olefinically unsaturated monomers or oligomers such as 1,2,4-trivinylcyclohexane, triallyl cyanurates or triallyl isocyanurates, and tri(meth)acrylates, such as trimethylolpropane trimethacrylate. This also includes unsaturated substituted monomers and oligomers such as 2,2-bis[[(2-methyl-1-oxoallyl)oxy]methyl]-1,3-propanediylbismethacrylate (pentaerythritol tetramethacrylate), tetraallyl-cis,cis,cis,cis-1,2,3,4-cyclopentanetetracarboxylate, tetraallylsilanes, and glyoxalbis(diallylacetal). Since hydrosilylation curing is also conceivable in addition to radical curing, multiply Si- Wa 12335-S / Wi 77 H-functional components can also act as crosslinkers, such as 1,1,2,2-tetramethyl-1,2-disilane, 1,4-bis(dimethylsilyl)benzene or multiply chain and / or terminal Si-H-functional oligo- and polyorganosilanes.As catalysts orSuitable initiators for the radical curing of binder preparations comprising binders of formula (I) and organic monomers, oligomers, and polymers are the same as those already mentioned above, i.e., in particular, peroxides. Furthermore, other radical initiators are suitable for initiating the radical curing of both the binders of formula (I) alone and the binder preparations described, such as, for example, azo components such as, for example, α,α'azobis(isobutyronitrile), redox initiators such as, for example, combinations of peroxides such as hydrogen peroxide and iron salts, or azides such as acetyl azide. The polysilanes of formula (I) or the preparations containing them or the silicon particles according to the invention can be used for the application according to the invention both in solvent-free and solvent-containing forms.They are generally used as a solvent-containing preparation to facilitate the homogeneous distribution of all components of the formulation and the wetting and saturation of any reinforcing layer used. A reinforcing layer is generally included. This is preferably a glass fiber fabric. The reinforcing layer can be impregnated by impregnating the preparation. Various technical solutions are available for this, including, where appropriate, continuous processes, and their selection for producing the metal-clad laminates according to the invention is in no way restricted. Non-limiting examples of application techniques include dipping, optionally of webs Wa 12335-S / Wi 78 of the reinforcing material via roller systems in continuous processes, spraying, flow coating, knife coating, etc.An advantage of the present invention is that all available technologies can be applied without restriction or modification, and no special new process is required for the use of the binders of formula (I). In this respect, the present invention is fully within the available state of the art in the production of the metal-clad laminates. What is new is the use of the binders of formula (I) for the production of the metal-clad laminates in question, which was previously unknown. Impregnation is followed by a drying step in which any solvent used is removed. State-of-the-art methods are also used for the drying process. These include, in particular, thermally induced evaporation with or without vacuum.By appropriately adjusting the reactivity and tackiness of the binder mixture used, storable composite materials are obtained after this step under suitable conditions, such as cooling, which can be further processed at a later date if necessary. In a final step of the process, the binder preparation is polymerized using state-of-the-art methods. Any initiators used for radical polymerization are heated above their decomposition temperature, causing them to decompose to form radicals and initiate the radical polymerization of the binder preparation. Radiation curing methods are also generally applicable.If hydrosilylation curing is used instead of radical polymerization, a temperature must be applied in this step that is suitable for deactivating the inhibitor used with the hydrosilylation catalyst to form Wa 12335-S / Wi 79 and for releasing the catalytic activity of the hydrosilylation catalyst. This step is generally carried out at an elevated temperature of preferably 100 to 390°C, more preferably 100 to 250°C, in particular 130 to 200°C, with the temperature being effective for a time of preferably 5 to 180 minutes, more preferably 5 to 150 minutes, in particular 10 to 120 minutes. Furthermore, it is customary to apply elevated pressure in this step. Typical pressures are in the range from 1 to 100 MPa, more preferably from 1 to 50 MPa, in particular from 1 to 30 MPa.The lamination of the composite material with a conductive metal layer takes place in this second step by applying a layer of at least one selected metal to one or both sides of the composite material consisting of the reinforcement layer and binder preparation before curing takes place. This means that between the first step consisting of impregnation and drying and the second step comprising the chemical curing of the binder preparation, the composite from the first step is laminated with at least one type of conductive metal. In particular, at least one of the following can be considered as conductive metals: copper, stainless steel, gold, aluminum, silver, zinc, tin, lead and transition metals. The thickness of the conductive layer, its shape, size or surface texture are not fundamentally restricted.The conductive metal layer preferably has a thickness of 3 to 300 µm, more preferably 3 to 250 µm, in particular 3 to 200 µm. The thickness of the two layers of at least one type of conductive metal, if two layers are used, can vary and does not have to be identical. It is particularly preferred that the conductive metal is copper and, if two conductive layers of conductive metal are used, that both layers are copper Wa 12335-S / Wi 80. The conductive metal is preferably used in the form of a foil made of the respective metal. The average roughness Ra of the metal foil used is preferably at most 2 µm, more preferably at most 1 µm, in particular at most 0.7 µm. The lower the surface roughness, the better the suitability of the respective foil for use in high-frequency applications, which are the preferred objective of the present invention.To improve the adhesion between the conductive metal layer and the composite of binder preparation and reinforcement layer, various state-of-the-art methods can be used, such as the use of an adhesion-promoting layer, electroplating the metal layer onto the composite of binder preparation and reinforcement layer, or vapor deposition. The conductive metal layer can be deposited directly onto the composite of binder preparation and reinforcement layer or bonded to it by an adhesion-promoting layer.If no reinforcement layer is used, a layer of the binder preparation containing the binders of formula (I) is created by depositing a layer of binder preparation on a carrier, such as a release film or release plate. In principle, any material from which the dried or cured binder preparation can later be removed is suitable for the carrier, such as polytetrafluoroethylene, polyester, and the like. The removability and film-forming properties on the respective carrier material must be determined individually depending on the binder composition. The statements made regarding the process remain equally valid for this reinforcement-free variant.Wa 12335-S / Wi 81 Multilayer structures can be created from the reinforced or unreinforced composite materials from the first step and the laminated composite materials from the second step. For example, by stacking several lengths of the composite materials from the first step alternately with the laminated laminates from the second step. The uncured composite materials from the first step are then cured in a process that essentially corresponds to the procedure for producing the metal-clad laminates. To create thicker layers, several layers of the reinforced or unreinforced composites from the first step can also be stacked one on top of the other in direct succession.In addition to the production of metal-clad laminates, the polysilanes of formula (I) can also be used in corrosion-protective preparations, particularly for use in corrosion protection at high temperatures. Furthermore, the polysilanes of formula (I) and preparations containing them can also be used for corrosion protection of reinforcing steel in reinforced concrete. Corrosion-inhibiting effects in reinforced concrete are achieved both when the polysilanes of formula (I) and preparations containing them are incorporated into the concrete mix before it is molded and cured, and when the polysilanes of formula (I) or preparations containing them are applied to the surface of the concrete after the concrete has cured.In addition to the purpose of corrosion protection on metals, the polysilanes of formula (I) can also be used to manipulate further properties of preparations containing the Wa 12335-S / Wi 82 binders according to the invention or of solids or films obtained from preparations containing the polysilanes of formula (I), such as- Control of electrical conductivity and electrical resistance - Control of the leveling properties of a preparation - Control of the gloss of a wet or cured film or an object - Increase in weathering resistance - Increase in chemical resistance - Increase in color stability - Reduction of the tendency to chalking - Reduction or increase of static and sliding friction on solids or films obtained from preparations containing polysilanes of formula (I) - Stabilization or destabilization of foam in the preparation containing the preparation - Improvement of the adhesion of the preparation containing the polysilanes of formula (I) to substrates - Control of filler and pigment wetting and dispersing behavior, - Control of the rheological properties of the preparation containing the binders according to the invention, - Control of the mechanical properties, such asFlexibility, scratch resistance, elasticity, extensibility, bending ability, tear resistance, rebound behavior, hardness, density, tear resistance, compression set, behavior at different temperatures, coefficient of expansion, abrasion resistance as well as other properties such as thermal conductivity, flammability, gas permeability, resistance to water vapor, hot air, chemicals, weathering and radiation, sterilizability, of solids or films available which contain the binders of formula (I) or preparations containing them Wa 12335-S / Wi 83- Control of electrical properties, such asDielectric loss factor, dielectric strength, dielectric constant, tracking resistance, arc resistance, surface resistance, specific dielectric resistance, flexibility, scratch resistance, elasticity, extensibility, bending ability, tear behavior, rebound behavior, hardness, density, tear resistance, compression set, behavior at different temperatures of solids or films obtainable from the preparation containing the polysilanes of formula (I). Examples of applications in which the polysilanes of formula (I) can be used to manipulate the properties described above are the production of coating materials and impregnations and the coatings and coverings obtainable therefrom on substrates such as metal, glass, wood, mineral substrates, synthetic and natural fibers for the production of textiles, carpets, floor coverings, or other goods that can be made from fibers, leather, plastics such as films, and molded parts.The polysilanes of formula (I) can also be used in preparations, with appropriate selection of the preparation components, as additives for the purposes of defoaming, promoting flow, hydrophobizing, hydrophilizing, filler and pigment dispersing, filler and pigment wetting, substrate wetting, promoting surface smoothness, and reducing adhesion and sliding resistance on the surface of the cured composition obtainable from the additivated preparation. The polysilanes of formula (I) can be incorporated into elastomer compositions in liquid or cured solid form. In this case, they can be used for the purpose of reinforcing or improving other performance properties, such as controlling transparency, heat resistance, yellowing tendency, or weathering resistance. All of the above symbols in the above formulas have their meanings independently of one another.In all formulas, the silicon atom is tetravalent. Examples: The following examples serve to further explain the invention. They are illustrative, not limiting. All percentages are by weight. Unless otherwise stated, all manipulations are carried out at room temperature of 23°C and under atmospheric pressure (1.013 bar). Unless otherwise stated, all data describing product properties apply at room temperature of 23°C and under atmospheric pressure (1.013 bar). The apparatus used is commercially available laboratory equipment, as sold by numerous equipment manufacturers. Ph stands for one phenyl radical = C6H5-. Me stands for one methyl radical = CH3-. Me2 stands for two methyl radicals, respectively. PPE stands for polyphenylene ether. HCl stands for hydrogen chloride. In this text, substances are characterized by data obtained by instrumental analysis.The underlying measurements are either carried out according to publicly available standards or determined using specially developed procedures. To ensure the clarity of the teachings provided, the methods used are listed below. Wa 12335-S / Wi 85 In all examples, parts and percentages are by weight, unless otherwise stated. Viscosity: Unless otherwise stated, viscosities are determined by rotational viscometric measurement in accordance with DIN EN ISO 3219. Unless otherwise stated, all viscosity data apply at 25°C and a standard pressure of 1013 mbar. Refractive index: Refractive indices are determined in the wavelength range of visible light, unless otherwise stated, at 589 nm at 25°C and a standard pressure of 1013 mbar in accordance with DIN 51423. Transmission: Transmission is determined by UV-VIS spectroscopy. A suitable instrument is, for example, the Analytik Jena Specord 200.The measurement parameters used are: Range: 190 – 1100 nm, Step size: 0.2 nm, Integration time: 0.04 s, Measurement mode: Step operation. First, the reference measurement (background) is performed. A quartz plate, attached to a sample holder (dimensions of the quartz plate: H x W approx. 6 x 7 cm, thickness approx. 2.3 mm), is placed in the sample beam path and measured against air. Then, the sample measurement is performed. A quartz plate attached to the sample holder with a sample applied (layer thickness approx. 1 mm) is placed in the sample beam path and measured against air. The internal calculation against the background spectrum yields the sample's transmission spectrum. Wa 12335-S / Wi 86 Molecular compositions: The molecular compositions are determined using nuclear magnetic resonance spectroscopy (for terminology, see ASTM E 386: High-resolution nuclear magnetic resonance spectroscopy (NMR): Terms and Symbols). 1 H-core and the 29Si core can be measured. Description 1 H-NMR measurement Solvent: CDCl3, 99.8%d Sample concentration: approx. 50 mg / 1 ml CDCl3 in 5 mm NMR tube Measurement without addition of TMS, spectra referencing of residual CHCl3 in CDCl3 to 7.24 ppm Spectrometer: Bruker Avance I 500 or Bruker Avance HD 500 Probe head: 5 mm BBO probe head or SMART probe head (Bruker) Measurement parameters: Pulprog = zg30 TD = 64k NS = 64 or 128 (depending on the sensitivity of the probe head) SW = 20.6 ppm AQ = 3.17 s D1 = 5 s SFO1 = 500.13 MHz O1 = 6.175 ppm Processing parameters: Wa 12335-S / Wi 87 SI = 32k WDW = EM LB = 0.3 Hz Depending on the spectrometer type used, individual adjustments to the measurement parameters may be necessary. Description 29Si-NMR measurement Solvent: C6D6 99.8%d / CCl4 1:1 v / v with 1 wt% Cr(acac)3 as relaxation reagent Sample concentration: approx. 2 g / 1.5 ml solvent in 10 mm NMR tube Spectrometer: Bruker Avance 300 Probe head: 10 mm 1H / 13C / 15N / 29Si glass-free QNP probe head (Bruker) Measurement parameters: Pulprog = zgig60 TD = 64k NS = 1024 (depending on the sensitivity of the probe head) SW = 200 ppm AQ = 2.75 s D1 = 4 s SFO1 = 300.13 MHz O1 = -50 ppm Processing parameters: SI = 64k WDW = EM LB = 0.3 Hz Depending on the spectrometer type used, Individual adjustments to the measurement parameters may be necessary. Wa 12335-S / Wi 88 Molecular weight distributions: Molecular weight distributions are determined as weight average Mw and number average Mn using gel permeation chromatography (GPC or size exclusion chromatography (SEC)) with a polystyrene standard and refractive index detector (RI detector). Unless otherwise stated, THF is used as the eluent and DIN 55672-1 is applied.Polydispersity is the ratio Mw / Mn. Glass transition temperatures: The glass transition temperature is determined by differential scanning calorimetry (DSC) according to DIN 53765, using a perforated crucible and a heating rate of 10 K / min. Particle size determination: The particle sizes were measured using the dynamic light scattering (DLS) method, determining the zeta potential. The following aids and reagents were used for the determination: 10 x 10 x 45 mm polystyrene cuvettes, disposable Pasteur pipettes, and ultrapure water. The sample to be measured is homogenized and filled into the measuring cuvette without bubbles. The measurement is carried out at 25°C after an equilibration time of 300 s with high resolution and automatic measurement time adjustment. The values ​​given always refer to the D(50) value.D(50) is defined as the volume-averaged particle diameter at which 50% of all measured particles have a volume-averaged diameter smaller than the stated value D(50). Wa 12335-S / Wi 89 Determination of dielectric properties: Df, Dk The dielectric properties were determined according to IPC TM 6502.5.5.13 using a Keysight / Agilent E8361A network analyzer using the split-cylinder resonator method at 10 GHz. Microscopy procedure: The micro- / nanostructure was characterized using light microscopy or transmission electron microscopy.Light microscopy: Sample preparation: 1 drop of sample (undiluted) on a slide; covered with a coverslip. Instrument: LEICA DMRXA2 with LEICA DFC420 CCD camera (2592x1944 pixels). Image: Transmitted light – interference contrast, various magnification levels. Transmission electron microscopy: Sample preparation: 1 drop of sample (dilution 1:20, adjustment necessary if necessary) on a coated TEM grid; addition of a contrast agent if required; drying at room temperature. Instrument: ZEISS LIBRA 120 with Sharp Eye CCD camera (1024x1024 pixels). Image: Excitation voltage 120 kV; TEM bright field. Different magnification levelsAdhesion test by peel strength test:The adhesion of the metal layers laminated to the composite layers with or without reinforcement material was determined according to the method IPC-TM 650 2.4.8 "Peel Wa 12335-S / Wi 90 Strength of Metallic Clad Laminates" in the "as received" version, ie without thermal stress or exposure.The metal-clad laminates from Application Examples 1 and 2 were used for the adhesion test. Synthesis Example 1: According to the invention using a prior art method: Preparation of an organopolysilane according to formula (I) using a prior art method according to "Material Sciences and Applications, 2015, 6, 576-590." 42.39 g of lithium chloride (1 mol) are weighed into an evacuable glass vessel equipped with a magnetic stirrer bar. The glass vessel is sealed and immersed in an oil bath until the oil level is higher than the lithium chloride level in the container. The oil bath is heated to 120°C, and the glass vessel is evacuated until a vacuum of 0.001 mbar is reached. The lithium chloride is dried in this manner for 24 hours. 27.25 g of zinc chloride (0.2 mol) are dried in a second glass container in the same manner for 24 hours. The vacuum is then broken with dry nitrogen.48.6 g of magnesium turnings (2 mol) are placed in a 4-liter multi-necked glass flask equipped with a stopcock and a dropping funnel. The reaction vessel is evacuated three times to a vacuum of 0.01 mbar, which is broken each time with dry nitrogen. During this time, the glass wall is blown with a hot-air blower set at 280°C to remove any water adhering to the wall and the magnesium powder. All further manipulations are always carried out under nitrogen as a protective gas, so that neither oxygen nor atmospheric moisture can enter the reaction vessel. The magnesium is slurried with 800 ml of tetrahydrofuran (THF) dried over potassium hydroxide according to the state-of-the-art technique. Wa 12335-S / Wi 91 The dried lithium chloride is slurried with 50 ml of dried THF while stirring with a magnetic stirrer, and the slurry is forced into the reaction vessel through a Teflon tube containing nitrogen.To completely transfer the entire amount of lithium chloride into the reaction vessel, this process is repeated three times. The mixture of magnesium turnings and lithium chloride is stirred for 30 minutes. The procedure described for lithium chloride is then repeated with zinc chloride, and the zinc chloride, along with a total of 150 ml of dried THF, is also completely transferred into the reaction vessel. A total of 1100 ml of THF and the specified amounts of magnesium, lithium chloride, and zinc chloride are now present in the reaction vessel. Stir for 1 hour, during which lithium chloride and zinc chloride dissolve with exothermic heat evolution. The temperature in the vessel rises from 22.5°C to 32.5°C. The mixture is cooled to an internal temperature of 8°C using an ice-water bath. 316.5 g of phenyltrichlorosilane (1.5 mol) are forced into the dropping funnel with nitrogen.After the zinc chloride and lithium chloride have completely dissolved, the phenyltrichlorosilane is added dropwise over 65 minutes. During the dropwise addition, the internal temperature rises exothermically from 8°C to 36.8°C. After the phenyltrichlorosilane addition is complete, the mixture is stirred for 24 hours without heating or cooling. The viscosity of the reaction mass increases. After the stirring time has elapsed, a further 400 ml of dried THF is added under nitrogen. The mixture is stirred for 30 minutes to allow the THF to disperse, and then 720 ml of toluene is added under nitrogen. Wa 12335-S / Wi 92 After the addition of toluene, the mixture is stirred for 30 minutes to allow the toluene to disperse evenly. A nitrogen atmosphere is no longer required for any subsequent steps. 100 ml of 1 molar hydrochloric acid, cooled to 0°C, is added to the reaction vessel and diluted with a further 170 ml of commercially available undried THF to ensure stirrability of the mass.Precipitations of metal salts are obtained and filtered off. The filter cake is washed three times with 300 ml of THF each time to extract any remaining product. The combined liquid product phase is washed acid-free three times with 1200 ml of 10% sodium chloride solution each time. The residual hydrochloric acid content obtained is determined to be < 20 ppm by state-of-the-art acid-base titration. The volatile components consisting of THF, toluene, and residual water are removed from the washed product phase at 125°C and a vacuum of 10 mbar. The product obtained is a slightly yellowish solid residue that is readily soluble in xylene and has the following analytical data: SEC: Mw = 1134 g / mol, Mn = 915 g / mol, polydispersity PD = 1.24. 29 Si-NMR is the molar composition of the silicon-containing part of the preparation:PhSi(Si3 / 2): 96.4 %PhSi(O): 3.6% PhSi(Si 3 / 2) means a Ph-Si unit that is only bonded to other Si atoms, i.e., a polysilane element. PhSi(O) means a building block in which a Si atom is bonded to at least one oxygen, regardless of whether this belongs to a terminal OH or a Si-O framework unit Wa 12335-S / Wi 93. The remaining silanol content is 0.5 weight percent, determined by 1 H-NMR spectroscopy. Thus, the proportion of oxygen-containing groups is sufficiently low to be in accordance with the invention. With the Mw given above, a molecule has an average of 9 repeating units, calculated with the predominantly present PhSi(Si3 / 2) unit, calculated as PhSi unit. The smallest detected molecular weight is 536 g / mol, which corresponds to 5 repeating units of the form PhSi(Si 3 / 2) calculated as PhSi, the highest molecular weight is 5100 g / mol. Thus, with a high probability, only repeat units are present that have more than at least three direct Si-Si bonds. This product is referred to below as 1. Synthesis Example 2: According to the invention: Preparation of a polysilane according to the invention using the novel process according to the invention using allyl chloride for functionalization. The synthesis according to Synthesis Example 1 is repeated, but in contrast to Synthesis Example 1, the following amounts are used: Magnesium turnings: 121.5 g (5.0 mol) Allyl chloride: 11.48 g (0.15 mol) The procedure corresponds to that described in Example 1, with the difference that after the phenyltrichlorosilane has been added, stirring is continued for 3 hours without heating or cooling, and then 11.48 g of allyl chloride are added dropwise at a steady rate over 20 minutes.This is the step that distinguishes the novel process according to the invention from the state of the art Wa 12335-S / Wi 94 according to "Material Sciences and Applications, 2015, 6, 576-590." This results in exothermic heat evolution, as a result of which the internal temperature in the reaction vessel rises by 5.2°C. After the allyl chloride addition is complete, the mixture is stirred for 24 hours without heating or cooling and then worked up as per Example 1. The product obtained is a solid, slightly yellowish powder that is readily soluble in xylene and has the following analytical data: SEC: Mw = 14628 g / mol, Mn = 1777 g / mol, polydispersity PD = 8.23. 29 Si-NMR is the molar composition of the silicon-containing part of the preparation:PhSi(Si3 / 2): 90.2 %PhSi(CH2CH=CH2)(Si2 / 2): 9.0 %PhSi(O): 0.8 %The rest silanol content is determined by 1H-NMR spectroscopy can no longer be determined precisely and amounts to <0.05 weight percent. Thus, the proportion of oxygen-containing groups is sufficiently low to be in accordance with the invention. Compared to Synthesis Example 1, which was prepared strictly according to the prior art according to "Material Sciences and Applications, 2015, 6, 576-590," it is noticeable that the residual Si-O content is significantly reduced. This is the result of the additional inventive and novel step disclosed for the first time in the present invention. This product is referred to below as 2. Synthesis Example 3: In accordance with the invention: Preparation of a polysilane according to the invention using the new Wa 12335-S / Wi 95 inventive process using vinylmagnesium chloride for functionalization.The synthesis according to Synthesis Example 1 is repeated, using the following quantities in contrast to Synthesis Example 1: Diphenyldichlorosilane: 380 g (1.5 mol) Vinylmagnesium chloride: 750 mL (0.75 mol) 1M solution in THF The procedure corresponds to that described in Example 1, with the difference that after the addition of diphenyldichlorosilane, the mixture is stirred for 3 hours without heating or cooling, and then 750 mL of a 1M solution of vinylmagnesium chloride in THF is added dropwise at a steady rate over 45 minutes. This results in an exothermic evolution of heat, as a result of which the internal temperature in the reaction vessel rises to 50°C. After the addition of vinylmagnesium chloride is complete, the mixture is stirred for 24 h without heating or cooling and then worked up according to Example 1. The product obtained is a solid, slightly yellowish powder which is easily soluble in xylene and has the following analytical data: SEC: Mw = 1975 g / mol, Mn = 1712 g / mol, polydispersity PD = 1.15.This means that on average, more than three repeating units are bonded to each other by direct Si-Si bonds. 29 Si-NMR is the molar composition of the silicon-containing part of the preparation: Wa 12335-S / Wi 96PhSi(Ph2Si): ​​68.3 %PhSi(Vi-Ph2Si): ​​31.7 % PhSi(O): not detectable The remaining silanol content is according to 1H-NMR spectroscopy <0.05 weight percent. Thus, the proportion of oxygen-containing groups is sufficiently low to be in accordance with the invention. Compared to Synthesis Example 1, which was prepared according to the prior art according to "Material Sciences and Applications, 2015, 6, 576-590," it is noticeable that the residual Si-O content is significantly reduced. This is the result of the additional, novel step disclosed for the first time in the present invention. This product is referred to below as 3. Synthesis Example 4: In accordance with the invention: Preparation of a polysilane according to the invention using the novel process according to the invention using styrene and allyl chloride.The synthesis according to Synthesis Example 1 is repeated, but in contrast to Synthesis Example 1 the following amounts are used: Phenyltrichlorosilane 285.5 g (1.35 mol) Styrene 15.5 g (0.15 mol) Magnesium turnings: 48.6 g (2.0 mol) Allyl chloride: 22.95 g (0.3 mol) The procedure corresponds to that described in Example 1 with the difference that after the phenyltrichlorosilane has been added, stirring is continued for 3 hours without heating or cooling and then the stated amount of styrene is added dropwise evenly within 15 min. Stirring is then continued for 3 h, and then the specified amount of allyl chloride is added dropwise at a steady rate over 45 min. This step of adding allyl chloride is the step that distinguishes the novel process according to the invention from the prior art according to "Material Sciences and Applications, 2015, 6, 576-590".Upon addition of allyl chloride, an exothermic heat evolution occurs, causing the internal temperature in the reaction vessel to rise by 6.4°C. After the addition of allyl chloride, the mixture is stirred for 20 h without heating or cooling and then worked up as per Example 1. The product obtained is a solid, slightly yellowish powder that is readily soluble in xylene and has the following analytical data: SEC: Mw = 2765 g / mol, Mn = 1645 g / mol, polydispersity PD = 1.68. 29 Si-NMR is the molar composition of the silicon-containing part of the preparation:PhSi(Si3 / 2): 81.8 %PhSi(CH2CH=CH2)(Si2 / 2): 18.1 %PhSi(O): 0.1 %According to 1 H-NMR is the molar composition of the obtained copolymer taking into account the polystyrene content:PhSi(Si3 / 2): 75.1%PhSi(CH2CH=CH2)(Si2 / 2): 16.6%PhSi(O): 0%, ie not detectable Styrene: 8.3% Wa 12335-S / Wi 98 The rest silanol content is determined by 1H-NMR spectroscopy can no longer be determined and amounts to <0.05 weight percent. Thus, the proportion of oxygen-containing groups is sufficiently low to be in accordance with the invention. Compared to Synthesis Example 1, which was prepared strictly according to the prior art according to "Material Sciences and Applications, 2015, 6, 576-590," it is noticeable that the residual Si-O content is significantly reduced. This is the result of the additional inventive and novel step, which is disclosed for the first time in the present invention. This product is referred to below as 4. Synthesis Example 5: Not in accordance with the invention: Preparation of a non-inventive polysilane-polysiloxane copolymer using a disilane building block. A mixture of 109 g of redistilled 1,2-dimethyl-1,1,2,2-tetrachlorodisilane (0.48 mol) and 820 g of vinyldimethylchlorosilane (5.8 mol) is cooled to 10°C. While stirring and simultaneously cooling, the mixture is added to approx.A total of 1.7 l of 5% HCl solution is added over 80 minutes at a rate sufficient to maintain the reaction mixture at 10–20°C. The mixture is then stirred vigorously for 30 minutes, and the phases are separated. The siloxane phase is washed four times with 1 l of water each time, neutralized with 0.5 l of 5% NaHCO3 solution, and washed again with 1 l of water. Volatile hydrolysis products (mainly divinyltetramethyldisiloxane) are removed in vacuo at up to 80°C. 149.8 g of a clear liquid with a viscosity of 7.2 mm are obtained as residue. 2 / s (25°C). Wa 12335-S / Wi 99 Per SEC (eluent toluene) the following molecular weights were determined: Mw = 1740 g / mol, Mn = 1203 g / mol, polydispersity PD = 1.44. After 29 Si-NMR is the molar composition of the silicon-containing part of the preparation: Me2Si(Vi)O1 / 2: 25.54 % O 2 / 2 (Me)Si-Si(Me)O 2 / 2: 74.46% In addition, 0.9% silanol groups are found, which are distributed statistically between the two indicated molecular segments. This polysilane-polysiloxane copolymer is not according to the invention because only two Si atoms are directly bonded to one another, and not predominantly at least three Si atoms as required by the invention. This product is referred to below as 5. Application Example 1: Use of the inventive and non-inventive polysilanes according to Synthesis Examples 1-5 for the production of metal-clad laminates. The polysilanes produced according to Synthesis Examples 1 to 5 and the comparative examples contained therein were used as binders to produce copper-clad laminates with a glass fiber-reinforced composite layer.The following materials were used: Copper foil: 35 µm thick copper foil (285 ± 10 g / m²) from Jiangtong-yates Copper Foil Co Ltd, with a surface roughness of Rz ≤ 1 µm and a centerline roughness of Ra ≤ 0.2 µm, purity ≥ Wa 12335-S / Wi 100 The copper foils were pretreated by placing them in a bath containing a mixture of 10% sulfuric acid containing 0.3 mol / l iron(II) sulfate and heated to 60°C for 30 minutes. They were then rinsed with demineralized water, dried with a cloth, and immediately used to produce the laminate. Glass fiber: E-glass fiber type 1080 E, manufactured by Changzhou Xingao Insulation Materials Co. Ltd. Thickness 0.055 ± 0.012 mm, 47.5 ± 2.5 g / m². In this example, all polysilanes were used as solutions in xylene. The solutions each contained 60% polysilane and 40% xylene.To initiate curing, the polysilanes were each mixed with 1 weight percent dicumyl peroxide, based on the amount of polysilane used, which was evenly distributed throughout the resin matrix by stirring. Laminates were produced by impregnating 30 x 30 cm glass fiber layers layer by layer with the respective polysilane, optionally as a xylene solution, using a deaerator roller to ensure that no bubbles were formed. The glass fiber layers were placed on a dimensionally stable, flat stainless steel base, onto which a layer of copper foil was applied before the first layer of glass fiber was applied. A total of three layers of glass fiber fabric were impregnated one after the other. To remove any solvent, the impregnated fabrics were dried at 60°C in a vacuum drying cabinet at 10 mbar until constant weight was reached.A second layer of copper foil was then applied to the impregnated glass fiber layer on top, and another dimensionally stable stainless steel plate, Wa 12335-S / Wi 101, was placed on top. The laminate was baked in a heatable press at 2 MPa pressure for 120 minutes at 200°C and 30 mbar vacuum. This resulted in copper-clad laminates with a total thickness of 260 ± 20 µm. The dielectric properties were determined according to IPC TM650 2.5.5.13 using a Keysight / Agilent E8361A network analyzer using the split-cylinder resonator method at 10 GHz. The following values ​​were obtained: P olysilan Dk Df1 (according to the invention) 2.87 0.00132 (according to the invention) 2.98 0.00123 (according to the invention) 2.79 0.00124 (according to the invention) 2.97 0.00125 (not according to the invention) 3.16 0.0041 The Df and Dk values ​​of the copper-clad laminates made from the polysilanes according to the invention are significantly lower than the Df and Dk values ​​obtained with the non-inventive polysilane-polysiloxane copolymer. Since the lowest possible dielectric loss factors and dielectric constants are desired for high-frequency applications, the polysilanes according to the invention have an advantage here, which can be explained by the lower polarity due to the smaller number of polar functional groups and polar framework units of the Si-O-Si form. For the peel test according to IPC-TM 6502.4.8, strips were cut from the laminates in the dimensions required by IPC-TM650 2.4.8.1 and the peel test was carried out without conditioning according to the procedure described there, i.e. as required by Wa 12335-S / Wi 102 in IPC-TM 650 2.4.8.1 means "as received." The result was determined according to the evaluation method in IPC-TM 650 2.4.8.2 in lbs / in (pounds per linear inch) or N / mm, with the equivalent of 100 lbs / in = 17.5 N / mm. olysilan N / mm 1 (according to the invention) 2.12 (according to the invention) 1.93 (according to the invention) 2.04 (according to the invention) 2.1 5 (nicht0.56 according to the invention) The polysilanes according to the invention achieve significantly higher adhesion values ​​than the non-inventive polysilane according to Synthesis Example 5. Application Example 2: Use of the inventive and non-inventive polysilane according to Synthesis Examples 1-5 for producing metal-clad laminates over prepregs. For this example, the polysilanes from Synthesis Examples 1-5 were used as a solution in xylene, with preparations of 40% xylene and 60% polysilane being used in each case. Instead of building the laminate directly without a prepreg intermediate as in Application Example 1, in contrast to Application Example 1, prepregs were produced this time by impregnating the glass fiber layers as individual layers, each on a polytetrafluoroethylene film, with the resin preparation and then drying them to constant weight in a vacuum drying cabinet.Three Wa 12335-S / Wi 103 layers of impregnated glass fiber fabric produced in this way were then stacked on top of each other on a copper foil, and the stack was sealed with a layer of copper foil. This multilayer structure was pressed and cured between two dimensionally stable stainless steel plates in a vacuum press under the conditions specified in Example 1, analogously to Application Example 1. The resulting laminates had thicknesses of 290 ± 20 µm. The resulting laminates had thicknesses of 270 ± 20 µm. The following dielectric properties were measured on the resulting laminates: P. olysilan Dk Df 1 (according to the invention) 2.89 0.00122 (according to the invention) 2.89 0.00133 (according to the invention) 2.81 0.00144 (according to the invention) 2.90 0.00135 (not according to the invention) 3.25 0.0044 The achieved D k and D f Values ​​of the copper-clad laminates made of the polysilanes according to the invention are significantly lower than the D f and D k-values ​​obtained with the non-inventive polysilane. Since the lowest possible dielectric loss factors and dielectric constants are desired for high-frequency applications, the polysilanes according to the invention offer an application advantage here. The deviations between the results from Application Examples 1 and 2 result from the measurement accuracy of the method used. Wa 12335-S / Wi 104 The adhesion tests were carried out analogously to Application Example 1 and the following results were obtained: P olysilan N / mm 1 (according to the invention) 2.22 (according to the invention) 2.13 (according to the invention) 2.24 (according to the invention) 2.3 5 (nicht 0.61 according to the invention) The polysilanes according to the invention achieve significantly higher adhesion values ​​than the non-inventive polysilane according to Synthesis Example 5.

Claims

Wa 12335-S / Wi 105 Claims 1. A process for producing a copper-clad laminate, comprising the following steps in the given order: (i) Providing a silicon-containing adhesion-promoting mixture comprising at least one organosilicon compound according to general formula (I), particles of elemental silicon or mixtures thereof: RaR 1 bSi [(SiR 2 cR 3 the 4 fSiO(4-f) / 2)]gYhSiRaR 1b (I), wherein the group Y can occupy any position within the organosilicon compound; at least one sequence is contained in which 3 Si atoms are linked to one another in succession via Si-Si bonds; R is the same or different and denotes hydrogen or a monovalent Si-C-bonded, optionally heteroatom-substituted hydrocarbon radical having 1 to 18 C atoms; R1, R2, R3 and R4 each independently denote a hydrogen radical or a Si-C-bonded, optionally heteroatom-substituted hydrocarbon radical having 1 to 18 C atoms or a hydrocarbon radical having 1 to 12 C atoms bonded via an oxygen atom and optionally heteroatom-substituted or a silanol radical; Wa 12335-S / Wi 106Y each independently represents a divalent to twelve-valent aromatic, alkylaromatic, cycloalkylaromatic or a divalent to twelve-valent aliphatic or cycloaliphatic hydrocarbon radical; a independently represents 0, 1, 2 or 3; b independently represents at most 3-a; c independently represents 0, 1 or 2; d independently represents 0 or 1; e has a value from 1 to 500; f independently represents 0, 1, 2 or 3; g represents an integer having a value from 0 to 200, where the proportion of the units [(R 4fSiO(4-f) / 2)]g based on the amount of all units of the framework of the organosilicon compound does not exceed 30 mol%; h is 0 or 1; (ii) applying the silicon-containing adhesion-promoting mixture to a first copper surface of a first copper material, thereby producing an adhesion-promoting layer on the first copper surface; (iii) optionally applying a second copper material to the first copper surface of the first copper material treated according to step (ii); and Wa 12335-S / Wi 107 (iv) Curing at a temperature in the range of 60-380°C and a pressure of 1-100 bar, whereby a copper-clad laminate is obtained.

2. The method according to claim 1, wherein step (ii)' follows immediately after step (ii), in which a silicon-containing adhesion-promoting mixture according to general formula (I), a polymeric binder, or a mixture thereof is again applied to the adhesion-promoting layer on the first copper surface treated according to step (ii) in order to produce a polymer layer on the adhesion-promoting layer.

3. The method according to claim 1 or 2, wherein the silicon-containing adhesion-promoting mixture in step (ii) and / or in step (ii)' further comprises at least one reinforcing material.

4. The method according to any one of the preceding claims, wherein the silicon-containing adhesion-promoting mixture in step (ii) further comprises a polymeric binder. 5.A process according to any one of the preceding claims, wherein the polymeric binder comprises at least one organic monomeric, oligomeric and / or polymeric binder selected from polyphenylene ethers, bismaleimides, bismaleimide triazine copolymers, aliphatic hydrocarbon resins, aromatic hydrocarbon resins, hybrid systems comprising both aliphatic and aromatic hydrocarbon resins, epoxy resins and cyanate ester resins. Wa 12335-S / Wi 1086. Method according to one of the preceding claims, wherein the first and optionally second copper surface are characterized in that they represent a substantially smooth copper surface.

7. Method according to one of the preceding claims, wherein the particles of elemental silicon are silicon particles with a particle size D 50from 10 nm to 2000 nm, and / or wherein the particles of elemental silicon have an oxygen content of < 1 percent by weight.

8. Process according to one of the preceding claims, wherein in formula (I), based on all Si atoms which are bonded to one another by Si-Si bonds, at least 60% are present in sequences in which at least 3 Si atoms are linked to one another in succession via Si-Si bonds.

9. Process according to one of the preceding claims, wherein the organosilicon compound according to general formula (I) and / or the particles of elemental silicon are substantially free of oxygen.

10. Copper-clad laminate obtainable by a process according to one of the preceding claims.

11. Adhesive-promoting silicon-containing mixture comprising at least one organosilicon compound according to general formula (I), particles of elemental silicon or mixtures thereof: R a R 1 b Si [(SiR 2c R 3 d )] e [(R 4 f SiO (4-f) / 2 ] g Y h SiR a R 1 b (I), worin Wa 12335-S / Wi 109the group Y can occupy any position within the organosilicon compound;at least one sequence is contained in which 3 Si atoms are linked to one another in succession via Si-Si bonds;R is the same or different and denotes hydrogen or a monovalent Si-C-bonded, optionally heteroatom-substituted hydrocarbon radical having 1 to 18 C atoms;R1, R2, R3 and R4 each independently denote a hydrogen radical or a Si-C-bonded, optionally heteroatom-substituted hydrocarbon radical having 1 to 18 C atoms or a hydrocarbon radical having 1 to 12 C atoms bonded via an oxygen atom and optionally heteroatom-substituted or a silanol radical, preferably a hydrogen radical or a Si-C-bonded, optionallya hydrocarbon radical having 1 to 18C atoms substituted by heteroatoms;Y independently of one another denotes a di- to twelvevalent aromatic, alkylaromatic, cycloalkylaromatic or a di- to twelvevalent aliphatic or cycloaliphatic hydrocarbon radical;a independently of one another denotes 0, 1, 2 or 3;b independently of one another denotes at most 3-a;c independently of one another denotes 0, 1 or 2;. Wa 12335-S / Wi 110d independently represents 0 or 1;e represents a value from 1 to 500;f independently represents 0, 1, 2 or 3;g represents an integer with a value from 0 to 200, where the proportion of the units [(R 4 f SiO (4-f) / 2 )] gbased on the amount of all units of the framework of the organosilicon compound does not exceed 30 mol%; h is 0 or 1.

12. Use of the adhesion-promoting silicon-containing mixture according to claim 11 for promoting adhesion to copper surfaces of copper materials.

13. Use of the adhesion-promoting preparation according to claim 11 for producing metal-clad laminates, in particular for the high-frequency range.

14. Organosilicon compound according to formula (I):R a R 1 b Si [(SiR 2 c R 3 d )] e [(R 4 f SiO (4-f) / 2 ] g Y h SiR a R 1 b (I), wherein the group Y can occupy any position within the organosilicon compound; Wa 12335-S / Wi 111 contains at least one sequence in which 3 Si atoms are linked to one another in succession via Si-Si bonds;R is the same or different and denotes hydrogen or a monovalent Si-C bonded, optionally heteroatom-substituted hydrocarbon radical having 1 to 18 C atoms;R1, R2, R3 and R4 each independently of one another denote a hydrogen radical or a Si-C bonded, optionally heteroatom-substituted hydrocarbon radical having 1 to 18 C atoms or a hydrogen radical bonded via an oxygen atom, optionallya hydrocarbon radical having 1 to 12 C atoms substituted by heteroatoms or a silanol radical;Y independently of one another denotes a di- to twelve-valent aromatic, alkylaromatic, cycloalkylaromatic or a di- to twelve-valent aliphatic or cycloaliphatic hydrocarbon radical;a independently of one another denotes 0, 1, 2 or 3;b independently of one another denotes at most 3-a;c independently of one another denotes 0, 1 or 2;d independently of one another denotes 0 or 1;e assumes a value of 1 to 500;f independently of one another denotes 0, 1, 2 or 3;. Wa 12335-S / Wi 112g is an integer valued from 0 to 200, where the proportion of units [(R 4fSiO(4-f) / 2)]g based on the amount of all units of the framework of the organosilicon compound does not exceed 30 mol%;h denotes 0 or 1.

15. A process for preparing the organosilicon compound according to formula (I) according to claim 14, comprising the following steps in the order given: (a) reacting at least one silane of the formula (II)R 5 i Si(Hal) 4-i (II), where Hal is a halide radical,i is an integer of value 0, 1, 2 or 3 andR 5 independently of one another one or more radicals R, R 1 , R 2 , R 3 or R 4 means, optionally together with at least one polysilane of the formula (III) (SiR 5 j (Hal) 3-j )(SiR 5 j (Hal) 2-j ) k (SiR 5 j (Hal) 3-j )Y h (III), where Wa 12335-S / Wi 113 R5, Hal, Y and h each independently have the meanings already given above, j each independently represents a number with a value of 0, 1 or 2 does not represent an integer with a value of 0 to 10, with at least one reagent selected from magnesium and the metal halides of lithium, iron or zinc; (b) reacting the reaction mixture obtained after step (a) with at least one compound according to general formula (IV): XR 6 (IV), where R6 is an alkyl or alkenyl group having 1 to 12 C atoms and X represents a leaving group Met- or Hal'- or Hal'-Met-, which is cleaved off during the reaction itself and the group R 6 on Si-Hal' groups to form a group Si-R 6 where Met represents at least one metal atom and Hal' represents a halogen atom, optionally together with at least one aromatic vinyl compound, preferably selected from styrene Wa 12335-S / Wi 114 divinylbenzene isomers, 3,4-methylenedioxyallylbenzene and trivinylbenzene isomers, and mixtures thereof; (c) hydrolytic workup of the reaction mixture obtained after step (b); and (d) optionally removing volatile components.

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