Optoelectronic arrangement and method for shaping a laser light emitted by a semiconductor laser device of an optoelectronic arrangement

Abstract

The invention relates to an optoelectronic arrangement comprising a first semiconductor laser device and a photonically integrated element optically coupled to the first semiconductor laser device. The first semiconductor laser device has a first laser light exit surface for coupling out laser light generated by the first semiconductor laser device, wherein the first semiconductor laser device is designed to emit laser light that has a different divergence angle in two mutually perpendicular directions. The photonically integrated element comprises a first laser light coupling-in surface that is optically coupled to the first laser light exit surface, a first waveguide section adjoining the first laser light coupling-in surface and designed to guide the laser light coupled into the first laser light coupling-in surface, a first light-shaping element that is at least optically coupled to the first waveguide section and is designed to shape the laser light emitted by the first semiconductor laser device in such a way that the laser light has a substantially equal divergence angle in the two mutually perpendicular directions after being coupled out of the photonically integrated element, and a first coupling-out element that is operatively connected to the first light-shaping element in order to emit the shaped laser light.

Description

[0001] OPTOELECTRONIC ARRANGEMENT AND METHOD FOR FORMING A

[0002] SEMICONDUCTOR LASER DEVICE OF AN OPTOELECTRONIC ARRANGEMENT OF EMISSED LASER LIGHT

[0003] This application claims priority from German patent application No. 10 2024 110 364 . 7 of April 12, 2024, the disclosure of which is hereby incorporated by reference into this application.

[0004] The present invention relates to an optoelectronic arrangement comprising a semiconductor laser device and a photonically integrated element coupled to the semiconductor laser device, wherein the photonically integrated element has a light-shaping element for shaping the laser light emitted by the semiconductor laser device. Furthermore, the present invention relates to a method for shaping laser light emitted by a semiconductor laser device of an optoelectronic arrangement.

[0005] BACKGROUND

[0006] In near-to-eye (NTE) applications, such as laser beam scanning projection, the laser light emitted by a semiconductor laser light source is projected into or near the eye of a user of the application using an optical module. The optical module downstream of the semiconductor laser light source usually includes circular mirrors (e.g., MEMS scanning mirrors) by means of which the laser light can be redirected into or near the eye of a user of the application.

[0007] Semiconductor edge-emission lasers (EELs), for example, have an elliptical output beam with a rapidly diverging axis (fast axis) and a more slowly diverging axis (slow axis). This is due to the electro-optical design of the EEL, with its vertical EPI layer stack and an etched rib structure, which favors an elliptical profile of the optical wave guided within the EEL resonator. When illuminating circular mirrors with such an elliptical beam profile, portions of the elliptical beam are typically clipped. However, this results in a loss of optical efficiency.

[0008] In addition, in NTE applications it may be desirable for the emission points, for example of an RGB light source comprising three semiconductor laser devices or a semiconductor laser device with three emission windows for emitting red, green and blue laser light, to be close together in order to keep the overall size of a system comprising the light source and a downstream optical module small.

[0009] At present, however, no solutions are known by means of which the system for an NTE application can be kept small and at the same time the optical efficiency of the system can be kept high.

[0010] There is therefore a need to provide an optoelectronic arrangement and a method for operating an optoelectronic arrangement by means of which at least some of the aspects mentioned can be overcome or at least counteracted.

[0011] SUMMARY OF THE INVENTION

[0012] This need is met by the subject matter of the independent patent claims. Further developments and embodiments of the proposed principle are specified in the subclaims.

[0013] The invention relates to an optoelectronic arrangement comprising a semiconductor laser device and a photonic integrated element / circuit ("PIC") coupled to the semiconductor laser device, which emits circular output beams with a suitable divergence across the entire visible range of the laser light. The technical problem of providing circular optical beams with similar divergence angles across the entire visible range is solved by means of a beam-shaping element provided in the photonic integrated element, which is designed to shape an elliptical beam profile emitted by the semiconductor laser device into a substantially circular beam profile.For this purpose, the beam-shaping element is designed as an RIB waveguide, which is configured such that it has a substantially point-symmetric, in particular square, cross-section at its light exit surface in order to allow emission of a substantially circular beam profile into the environment, e.g., air, at its light exit side. At the same time, the optoelectronic arrangement, and in particular the photonically integrated element, is designed to provide a small distance between several emission points of several semiconductor laser devices (RGB outputs), while the overall size of the optoelectronic arrangement can be kept very small.

[0014] In typical geometries, a RIB waveguide is designed not to produce circular output beams. A typical RIB waveguide has, in particular, different geometries along the vertical and horizontal axes, which lead to different divergence angles of the output beam along the fast and slow axes. By varying, in particular continuously varying, the geometry of the plate region of such a RIB waveguide, a transition to a square output geometry can be achieved, for example, so that the output beam is shaped such that it has an essentially identical divergence angle along the fast and slow axes.

[0015] The aim of the present application is to provide a PIG waveguide element or a light shaping element integrated into a photonic integrated element, which is capable of providing at least some of the following properties:

[0016] • Transverse mode excitation of only one transverse oscillation mode, in particular the fundamental mode of the semiconductor laser device(s), over the entire visible range (blue, green, red).

[0017] • Circular beam at its output over the entire visible range with suitable and similar divergence angles, especially for laser light of RGB colors.

[0018] • Small footprint and relatively simple implementation in manufacturing. • Relatively large divergence angles can be achieved over the entire visible range, enabling the use of short focal length downstream lens optics.

[0019] In an NTE application as described above, this leads to a homogeneous illumination of circular mirrors (e.g. MEMS scanner mirrors) and thus to a higher efficiency of the overall system compared to so-called clipping when illuminating circular mirrors with laser light with an elliptical beam profile. In addition, the footprint of the proposed light-shaping element can be kept very small (< 100 pm), and the divergence angles (> 10 ° to > 45 °) are in a range that allows a smaller overall size of the downstream optical module and thus a smaller overall size of the overall system. In summary, this concept enables an advantageous implementation for (ultra) compact optoelectronic arrangements for NTE applications that aim for a minimal overall area and circular output beams.

[0020] According to a first aspect, an optoelectronic arrangement is provided. The optoelectronic arrangement comprises a first semiconductor laser device, in particular having an optical resonator, and a first laser light exit surface for coupling out a laser light generated by the first semiconductor laser device.

[0021] The first semiconductor laser device is configured to emit laser light having a different divergence angle in two mutually perpendicular directions, i.e., along the fast and slow axes of the laser light. For example, the first semiconductor laser device can be configured to emit laser light with an elliptically shaped beam profile.

[0022] According to some aspects, the first semiconductor laser device is configured to emit laser light in the spectrum visible to the human eye, for example, in a range between 380 nm and 750 nm. Furthermore, the first semiconductor laser device can be configured to emit laser light only of the fundamental mode or the lowest-order transverse oscillation modes simultaneously. The first semiconductor laser device can therefore also be referred to, in particular, as a single-mode laser, which is configured to emit laser light only of the fundamental mode or the lowest-order transverse oscillation modes.

[0023] The optoelectronic arrangement additionally comprises a photonically integrated element or a photonically integrated circuit into which the laser light coupled out from the first semiconductor laser device through the first laser light exit surface is coupled. The photonically integrated element comprises a first laser light coupling surface which is optically coupled to the first laser light exit surface, a first waveguide section which adjoins the laser light coupling surface and is designed to guide the laser light coupled into the first laser light coupling surface, and a first light-shaping element which is at least optically coupled to the first waveguide section and is designed to shape the laser light emitted by the first semiconductor laser device in such a way that the laser light has a substantially identical divergence angle in the two mutually perpendicular directions after being coupled out from the photonically integrated element.In addition, the photonically integrated element comprises a first coupling-out element, which is operatively connected to the first light-shaping element for emitting the laser light shaped by the first light-shaping element, and via which the laser light can be coupled out of the optoelectronic arrangement. The coupled-out laser light has a substantially equal divergence angle in the two mutually perpendicular directions, particularly in the far field.

[0024] For example, the first semiconductor laser device can be formed by an edge-emitting laser chip which has an optical resonator, at one end of which the first laser light exit surface is located. The optical resonator can be formed between the first laser light exit surface and an end opposite the first laser light exit surface. For example, the first laser light exit surface can be partially reflective for this purpose and an end opposite the first laser light exit surface can be mirrored, so that an optical resonator is formed. The first semiconductor laser device can have one or more laser ridges which are formed in the first semiconductor laser device and provide a current constriction within the semiconductor laser device.Alternatively, current confinement can also be achieved by applying a narrow contact layer(s), such as in a current- or gain-guided laser.

[0025] An optical coupling between the first semiconductor laser device and the photonically integrated element can, for example, be effected in a direct manner, namely in that a laser light coupled out of the first laser light exit surface is coupled directly or by means of a further optical element into a first laser light coupling surface of the photonically integrated element opposite the first laser light exit surface. However, it is also possible for the first laser light exit surface and the first laser light coupling surface to be formed by a surface of the semiconductor laser device or of the photonically integrated element, which are evanescently coupled to one another, or for the first laser light exit surface to be directly optically coupled to a further optical element, such as a prism, for example, wherein the further optical element is evanescently coupled to the first laser light coupling surface.However, the options mentioned are to be understood merely as examples and not as limiting. However, an optical coupling between the first semiconductor laser device and the photonically integrated element can also be achieved using other known types of optical coupling.

[0026] According to some aspects, the first laser light coupling surface substantially corresponds to the size of the first laser light exit surface. In particular, the first laser light coupling surface is optically and optionally mechanically coupled to the first laser light exit surface and configured such that substantially any laser light coupled out via the first laser light exit surface is coupled into the first waveguide section of the photonically integrated element via the first laser light coupling surface. According to some aspects, the first laser light coupling surface is formed by a standard RIB waveguide in order to realize efficient coupling of the laser light into the PIC over the entire visible spectral range.Such a RIB waveguide may, for example, have a rib region and a plate region, wherein the rib region and the plate region preferably have a substantially different cross-section than commonly used strip waveguides.

[0027] In some aspects, the first waveguide section is configured to guide the coupled laser light along its propagation direction. In particular, the waveguide section is a structure that guides electromagnetic waves with minimal energy loss by restricting energy transfer to one direction. For example, the waveguide is made of a radiation-transmissive material for the laser light emitted by the semiconductor laser device.

[0028] According to some aspects, the first light-shaping element comprises a rib region and an underlying plate region. In particular, the rib region and the plate region are stacked on top of one another and extend between a first end of the first light-shaping element and a second end of the first light-shaping element opposite the first end. The rib region and the plate region act as a common core region of the first light-shaping element, which core region has a higher refractive index than a surrounding material. For example, the rib region and the plate region have different dimensions in a direction transverse to a main extension direction of the light-shaping element, at least at the first end.

[0029] According to some aspects, the plate region tapers from the first end of the light-shaping element in the direction of the second end, transversely to a main direction of extension of the light-shaping element. In addition, the rib region together with the plate region has, at least at the second end, a cross-section which is point-symmetrical with respect to its center point. In the region of the first end, the first light-shaping element or the rib region together with the plate region can in particular have a T-shaped cross-section which tapers in the direction of the second end in such a way that the rib region together with the plate region has, at least at the second end, a cross-section which is point-symmetrical, for example square or round, with respect to its center point.The rib region together with the plate region can in particular be designed such that the point-symmetric cross-section extends from the second end between 0 pm and 2 mm, in particular between 10 pm and 100 pm, in the direction of the first end. The fact that the first light-shaping element or the rib region together with the plate region has the point-symmetric cross-section over a length of at least 10 pm can ensure that the laser light emitted by the first light-shaping element and coupled out of the photonically integrated element has a substantially identical divergence angle in the two mutually perpendicular directions.

[0030] According to some aspects, the plate region has a width, at least at the first end, that is greater than a width of the rib region. The width of the plate region describes a lateral extent of the plate region in an orientation transverse to a main propagation direction of the laser light in the first light-shaping element. The width of the rib region also describes a lateral extent of the rib region in an orientation transverse to a main propagation direction of the laser light in the first light-shaping element.

[0031] According to some aspects, the first light-shaping element has a height of between 100 nm and 2000 nm, preferably between 200 nm and 1400 nm, and particularly preferably between 400 nm and 1200 nm, at least at the second end. The height of the first light-shaping element describes a vertical extent of the first light-shaping element in an orientation transverse to a main propagation direction of the laser light in the first light-shaping element and perpendicular to the lateral extent of the rib region and the plate region. According to some aspects, the rib region has a height of 10% - 80% of the height of the first light-shaping element. In other words: HR = x*HLf, where x is in the range from 0.1 to 0.8, HR corresponds to the height of the rib region and HLf to the height of the first light-shaping element. Preferably x = 0.2 to 0.6, and particularly preferably x = 0.3 to 0.5.The height of the rib region describes a vertical extension of the rib region in an orientation transverse to a main propagation direction of the laser light in the first light-shaping element and perpendicular to the lateral extension of the rib region and the plate region.

[0032] According to some aspects, the rib region has a height of between 100 nm and 600 nm, at least at the second end. The height of the rib region can, among other things, be an indication of whether the first light-shaping element limits the propagation of the coupled-in laser light to a single-mode electromagnetic wave, or allows the propagation of multiple modes of an electromagnetic wave simultaneously. Additionally or alternatively, the rib region can have a width of between 500 nm and 10,000 nm, preferably between 600 nm and 2,000 nm, and particularly preferably between 1,000 nm and 1,500 nm, at least at the second end. The width of the rib region describes a lateral extent of the rib region.The width of the rib region can, among other things, be an indication of whether the first light-shaping element limits the propagation of the coupled laser light to a single-mode electromagnetic wave or allows the propagation of several modes of an electromagnetic wave simultaneously.

[0033] In some aspects, the rib region has a substantially constant width from the first end to the second end. Constant means without variations within manufacturing tolerances. For example, the rib region does not have any tapered regions.

[0034] According to some aspects, the rib region tapers from the first to the second end. In particular, the rib region can taper together with the plate region such that the beam-shaping element has a substantially point-symmetric, in particular square, cross-section at least at its second end. According to some aspects, the photonically integrated element comprises a substrate and a cladding region. In particular, the plate region of the first light-shaping element is arranged on the substrate and the rib region is arranged on the plate region on a side facing away from the substrate. The cladding region is arranged, for example, on the rib region and on the plate region on a side facing away from the substrate and also covers side surfaces of the rib region along its main extension.In addition, the jacket region can also be formed between the substrate and the plate region and thus essentially completely enclose the plate region and the rib region except for the first and second ends.

[0035] According to some aspects, the refractive indices of the cladding region and the substrate differ from the refractive indices of the ridge region and the plate region by at least 0.1, in particular by at least 0.2. In particular, the refractive index of the waveguide is higher than the refractive indices of the substrate and the cladding region.

[0036] According to some aspects, the first light-shaping element is formed with SiN or AlN. Advantageously, SiN and AlN exhibit good transmission for electromagnetic radiation in the visible spectral range and are readily available.

[0037] In some aspects, the cladding region and / or the substrate are formed with Si or SiO2. SiO2 advantageously has a relatively low refractive index compared to SiN and AlN and is therefore particularly suitable as a cladding material for producing the first light-shaping element.

[0038] According to some aspects, the first light-shaping element is configured to predominantly guide and shape a fundamental waveguide mode, in particular the fundamental mode of the laser light emitted by the first semiconductor laser device. In other words, the first light-shaping element predominantly limits the propagation to an electromagnetic single-mode wave. According to some aspects, the optoelectronic arrangement further comprises at least one second semiconductor laser device having a second laser light exit surface for coupling out a laser light generated by the second semiconductor laser device. However, it is also possible for the optoelectronic arrangement to comprise more than two semiconductor laser devices, each having a laser light exit surface for coupling out a laser light generated by the respective semiconductor laser device.It is also conceivable for a semiconductor laser device to have a plurality of resonators and a plurality of laser light exit surfaces for coupling out a laser light generated in the respective resonator.

[0039] The photonically integrated element can accordingly have a second laser light coupling surface or a plurality of further laser light coupling surfaces which are optically coupled to the second or a plurality of laser light exit surfaces. Furthermore, the photonically integrated element can have a second waveguide section which adjoins the second laser light coupling surface and is designed to guide the laser light coupled into the second laser light coupling surface. It is understood that in the case of a plurality of laser light exit surfaces and correspondingly a plurality of laser light coupling surfaces, a plurality of waveguide sections can also be provided into which the light coupled out from the laser light exit surfaces is coupled via the laser light coupling surfaces.

[0040] According to some aspects, the first and second waveguide sections are optically coupled to one another, and the first light-shaping element is configured to shape the laser light emitted by the first and second semiconductor laser devices such that the laser light has a substantially equal divergence angle after being coupled out of the photonically integrated element in the two mutually perpendicular directions. Accordingly, the laser light from the first and second semiconductor laser devices can be mixed by optical coupling and shaped together by the first light-shaping element such that the laser light has a substantially equal divergence angle after being coupled out of the photonically integrated element in the two mutually perpendicular directions.It should be understood that in the case of multiple laser light exit surfaces and correspondingly multiple laser light coupling surfaces and waveguide sections, the laser light from all or a subset of the existing semiconductor laser devices can be mixed and subsequently shaped by means of the first light-shaping element such that the laser light coupled out from the photonically integrated element has a substantially identical divergence angle in the two mutually perpendicular directions. Such mixing can have the advantage that the intensity of the mixed laser light can be higher than unmixed laser light, or a desired mixed light comprising several colors can already be generated, which can subsequently be coupled out of the optoelectronic arrangement via the first coupling-out element.In this case, the first coupling-out element is in particular operatively connected to the first light-shaping element and is designed to emit the laser light emitted by the first and second semiconductor laser device (or several semiconductor laser devices), mixed and shaped by the light-shaping element.

[0041] According to some aspects, the laser light of all or a subset of the semiconductor laser devices is coupled out by the photonically integrated element in a common emission region, namely the first coupling-out element. Even in the case of multiple coupling-out elements via which the laser light emitted by the semiconductor laser devices is coupled out, the resulting emission region of the photonically integrated element has a smaller lateral extent than all semiconductor laser devices taken together. The emission points of the optoelectronic arrangement can accordingly be arranged significantly closer to one another than the laser light exit surfaces of the semiconductor laser device(s).

[0042] According to some aspects, the photonically integrated element comprises a second light-shaping element that is at least optically coupled to the second waveguide section and that is configured to shape the laser light emitted by the second semiconductor laser device such that the laser light coupled out from the photonically integrated element has a substantially identical divergence angle in the two mutually perpendicular directions. Furthermore, the photonically integrated element comprises a second coupling-out element that is spaced apart from the first coupling-out element and that is operatively connected to the second light-shaping element for emitting the shaped laser light.

[0043] Accordingly, it is also possible to individually shape the laser light from a plurality of semiconductor laser devices, each with a separate light-shaping element, and to couple it out of the photonically integrated element or the optoelectronic arrangement via a separate coupling-out element. However, it should be understood that combinations of the aforementioned embodiments are possible, namely, to shape and couple out laser light from individual semiconductor laser devices, to shape and couple out laser light from individual semiconductor laser devices and mixed laser light from a plurality of semiconductor laser devices independently of one another using a plurality of light-shaping elements, to shape and couple out differently mixed laser light from a plurality of semiconductor laser devices independently of one another using a plurality of light-shaping elements, etc.

[0044] According to some aspects, a lateral distance between the first and second coupling element or between a plurality of associated coupling elements is at most 10 pm, preferably at most 5 pm, and particularly preferably at most 3 pm. Such a compact distance makes it possible to mount a compact optical module for projecting the coupled-out light, for example, near a human eye, downstream of the optoelectronic arrangement.

[0045] According to some aspects, the first and the second semiconductor laser device are configured to emit laser light of different wavelengths. The main wavelengths of the semiconductor laser device differ, for example, by at least 10 nm, preferably by at least 20 nm. In particular, a first semiconductor laser device is configured to emit electromagnetic radiation with a main wavelength in the red spectral range, a second semiconductor laser device is configured to emit electromagnetic radiation with a main wavelength in the green spectral range, and a third semiconductor laser device is configured to emit electromagnetic radiation with a main wavelength in the blue spectral range.In addition, semiconductor laser devices can also be provided which emit electromagnetic radiation with a main wavelength in a different spectral range, and in particular a plurality of semiconductor laser devices can be provided which emit laser light with a main wavelength in one of the said spectral ranges.

[0046] In some aspects, the first light-shaping element is optically and optionally mechanically coupled to the first waveguide section. For example, the first light-shaping element may be adjacent to or downstream of the first waveguide section and may be optically and mechanically connected thereto. However, the first light-shaping element may also be evanescently coupled to the first waveguide section.

[0047] According to some aspects, the first coupling-out element is formed by the first light-shaping element. In particular, the second end of the first light-shaping element can form the first coupling-out element. However, it is also conceivable for the first light-shaping element to be followed by a waveguide section that forms the first coupling-out element, or for the photonically integrated element to comprise an optical element that follows the first light-shaping element and forms the first coupling-out element.

[0048] An optoelectronic arrangement described here is particularly suitable for use in integrated laser products, light source units and RGB light sources, such as augmented reality glasses, virtual reality glasses and compact mini projectors, especially for NTE applications.

[0049] According to a further aspect, a method for shaping laser light emitted by a first semiconductor laser device of an optoelectronic arrangement is provided, wherein the first semiconductor laser device is designed to emit laser light that has a different divergence angle in two mutually perpendicular directions. The method can in particular be a method for shaping laser light emitted by a first semiconductor laser device of an optoelectronic arrangement according to at least some of the aforementioned aspects. Thus, all aspects already described for the optoelectronic arrangement can be applied to the method in the same way.

[0050] The procedure includes the following steps:

[0051] Operating the first semiconductor laser device in such a way that it emits laser light from a first laser light exit surface which has a different divergence angle in two mutually perpendicular directions;

[0052] Coupling the laser light into a first waveguide section of a photonically integrated element adjoining a first laser light coupling surface;

[0053] Coupling the laser light into a first light-shaping element of the photonically integrated element adjoining the first waveguide section;

[0054] Shaping the laser light such that the laser light has a substantially equal divergence angle after coupling out of the photonically integrated element in the two mutually perpendicular directions; and

[0055] Coupling the shaped laser light out of the optoelectronic arrangement via a first coupling element of the photonically integrated element.

[0056] The photonically integrated element comprises a first laser light coupling surface which is optically coupled to the first laser light exit surface in order to guide the laser light coupled into the first laser light coupling surface, and a first light shaping element which is at least optically coupled to the first waveguide section and which is designed to shape the laser light coupled into the first light shaping element in such a way that the laser light coupled out from the photonically integrated element has a substantially equal divergence angle in the two mutually perpendicular directions.

[0057] BRIEF DESCRIPTION OF THE DRAWINGS Further aspects and embodiments according to the proposed principle will become apparent with reference to the various embodiments and examples which are described in detail in conjunction with the accompanying drawings.

[0058] Fig. 1 shows an embodiment of an optoelectronic device according to the proposed principle;

[0059] Fig. 2 shows a further embodiment of an optoelectronic device according to the proposed principle;

[0060] Fig. 3A and 3B show a theoretical beam profile of three

[0061] Semiconductor laser devices, as well as the beam profile generated by a light-shaping element according to the proposed principle; and

[0062] Fig. 4A to 4D show an isometric view, a top view, as well as a front and a rear view of a light shaping element according to the proposed principle.

[0063] DETAILED DESCRIPTION

[0064] The following embodiments and examples show various aspects and their combinations according to the proposed principle. The embodiments and examples are not always true to scale. Likewise, various elements can be shown enlarged or reduced in size to emphasize individual aspects. It goes without saying that the individual aspects and features of the embodiments and examples shown in the figures can be combined with one another without thereby impairing the inventive principle. Some aspects have a regular structure or shape. It should be noted that in practice slight deviations from the ideal shape can occur without, however, contradicting the inventive idea.Furthermore, the individual figures, features, and aspects are not necessarily shown in the correct size, and the proportions between the individual elements may not always be correct. Some aspects and features are emphasized by being shown enlarged. However, terms such as "top", "above", "below", "below", "larger", "smaller", and the like are correctly represented with reference to the elements in the figures. This makes it possible to infer such relationships between the elements from the illustrations.

[0065] Fig. 1 shows an embodiment of an optoelectronic arrangement 1 according to the proposed principle. The optoelectronic arrangement 1 comprises a first, second and third semiconductor laser device 2a, 2b, 2c, each with an optical resonator, and a laser light exit surface 3a, 3b, 3c for coupling out a laser light generated by the semiconductor laser device. The semiconductor laser devices are designed to emit laser light that has a different divergence angle in two mutually perpendicular directions, in particular with an elliptical beam profile.

[0066] The optoelectronic arrangement 1 additionally comprises a photonically integrated element 4. The photonically integrated element 4 has laser light coupling surfaces 5a, 5b, 5c which are optically coupled to the laser light exit surfaces 3a, 3b, 3c. Furthermore, the photonically integrated element 4 has a waveguide section 6a, 6b, 6c which adjoins each of the laser light coupling surfaces and is designed to guide the laser light coupled into the laser light coupling surfaces. In addition, the photonically integrated element 4 has a first light-shaping element 7a which is at least optically coupled to the waveguide sections and is designed to shape the laser light emitted by the semiconductor laser devices in such a way that the laser light coupled out of the photonically integrated element has a substantially identical divergence angle in the two mutually perpendicular directions.In the case shown, the waveguide sections are optically coupled to one another in a region in front of the first light-shaping element 7a, so that the laser light emitted by the semiconductor laser devices is mixed and subsequently shaped by means of the first light-shaping element 7a.

[0067] In the embodiment shown, the first light-shaping element 7a is designed as a geometrically adapted RIB waveguide which adjoins the optically coupled waveguide sections and is optically and mechanically coupled to them. The first light-shaping element 7a shapes laser light emitted by the semiconductor laser devices, which has a different divergence angle in two mutually perpendicular directions, in particular has an elliptical beam profile, in such a way that the laser light has a substantially identical divergence angle after leaving the first light-shaping element 7a and in particular after being coupled out of the photonically integrated element in the two mutually perpendicular directions.

[0068] Light is coupled out of the optoelectronic arrangement 1 via a first coupling-out element 8a, which in the illustrated case is formed by an outer surface of the first light-forming element 7a.

[0069] Figure 2 shows further embodiments of an optoelectronic arrangement 1 according to the proposed principle. Compared to the embodiment shown in Figure 1, the waveguide sections 6a, 6b, 6c are not optically coupled, and a light-shaping element 7a, 7b, 7c is provided in each case, which is coupled to one of the waveguide sections. Accordingly, light is coupled out of the optoelectronic arrangement 1 via three coupling-out elements 8a, 8b, 8c, which in the case shown are each formed by an outer surface of the light-shaping elements.

[0070] Figure 3A shows the theoretical beam profile of a laser light emitted by three semiconductor laser devices from their laser light exit surfaces, and Figure 3B shows the beam profile of a laser light emitted by three semiconductor laser devices, generated by a light-shaping element according to the proposed principle. Figure 3A shows that the laser light emitted by the semiconductor laser devices from their laser light exit surfaces has a different divergence angle sin ( 0 x ) , sin ( 0 y) and in particular has an elliptical beam profile . Figure 3B shows, however, that the laser light emitted by the semiconductor laser devices from their laser light exit surfaces and the beam profile generated by a light shaping element according to the proposed principle has an essentially identical divergence angle sin ( 0 x ) , sin ( 0 y ) and in particular has a circular beam profile. The different areas within the respective beam profile shown, as well as the scale shown to the right of the profile, indicate the standardized

[0071] Intensity I of the laser light in the far field.

[0072] Figures 4A to 4D show an isometric view (Fig. 4A), a top view (Fig. 4B), as well as a front view (Fig. 4C) and a rear view (Fig. 4D) of a light-shaping element according to the proposed principle. Figures 4C and 4D also show the iso-intensity lines of a laser light traveling along the light-shaping element.

[0073] The light-shaping element comprises a rib region 10 and a plate region 11 located underneath, which are arranged on a substrate 12. In particular, the rib region 10 and the plate region 11 are stacked on top of one another and extend between a first end 9a of the light-shaping element and a second end 9b of the light-shaping element located opposite the first end 9a. The rib region 10 and the plate region 11 act as a common core region of the light-shaping element, which has a higher refractive index than a surrounding material, so that the light-shaping element can also be referred to as a light-shaping waveguide. For this purpose, the rib region 10 and the plate region 11 can be encased in a cladding region (not shown), which can also extend between the substrate 12 and the plate region 11. In the region of the first end 9a, the light-shaping element orthe rib region 10 together with the plate region 11 has a T-shaped cross-section which tapers towards the second end 9b in such a way that the rib region 10 together with the plate region 11 has a cross-section at the second end 9b which is point-symmetrical, in particular square, with respect to its centre point. The plate region 11 has a width b1 at the first end which is wider than the width b2 of the rib region 10 and tapers towards the second end 9b down to the width b2 of the rib region 10, so that the square cross-section is produced at the second end 9b. The rib region 10, on the other hand, has an essentially constant width b2 from the first to the second end. The taper occurs to a point between 0 pm and 2 mm away from the second end, so that the point-symmetric cross section extends from the second end 9b between 0 pm and 2 mm in the direction of the first end 9a.However, it may be particularly preferred that the light-shaping element or the rib region 10 together with the plate region 11 has the point-symmetrical cross-section over a length 1 of at least 10 pm, so that it can be ensured that the laser light emitted by the light-shaping element and coupled out of the photonically integrated element has a substantially equal divergence angle in the two mutually perpendicular directions x, y.

[0074] The light-shaping element has a height h between 100 nm and 2000 nm, preferably between 200 nm and 1400 nm, and particularly preferably between 400 nm and 1200 nm. The rib region 10 has a height h2 of 10% - 80% of the height h of the light-shaping element, and in particular a height h2 between 100 nm and 600 nm. In addition, the rib region 10 has a width b2 between 500 nm and 10,000 nm, preferably between 600 nm and 2000 nm, and particularly preferably between 1000 nm and 1500 nm. With such dimensions, the light-shaping element is designed to shape a laser light coupled in at the first end 9a in such a way that, as shown in Figure 4D, it has a substantially equal divergence angle after coupling out of the photonically integrated element in the two mutually perpendicular directions x, y.The width bl of the plate region 11 can be between 500 nm and 15,000 nm at the first end, preferably between 700 nm and 5,000 nm, and particularly preferably between 800 nm and 3,000 nm, and corresponds at the second end 9b to the width b2 of the rib region 10. The height hl of the plate region 11 results from the information on the height h of the light-shaping element and the height h2 of the rib region 10.

[0075] LIST OF REFERENCE SYMBOLS optoelectronic arrangementa, 2b, 2c semiconductor laser devicea, 3b, 3c laser light exit surface photonically integrated elementa, 5b, 5c laser light coupling surfacea, 6b, 6c waveguide section a, 7b, 7c light shaping element a, 8b, 8c coupling-out element a, 9b end 0 rib region 1 plate region 2 substrate

[0076] Direction

[0077] Height

[0078] Width

[0079] length Divergence angle

Claims

PATENT CLAIMS 1. Optoelectronic arrangement (1) comprising: a first semiconductor laser device (2a), in particular with an optical resonator, and a first laser light exit surface (3a) for coupling out a laser light generated by the first semiconductor laser device (2a), wherein the first semiconductor laser device (2a) is designed to emit laser light which has a different divergence angle (sin(0 x ) , sin(0 y) ); and a photonically integrated element (4) with a first laser light coupling surface (5a) which is optically coupled to the first laser light exit surface (3a), a first waveguide section (6a) which is connected to the first laser light coupling surface (5a) and which is designed to guide the laser light coupled into the first laser light coupling surface (5a), a first light-shaping element (7a) which is at least optically coupled to the first waveguide section (6a) and which is designed to shape the laser light emitted by the first semiconductor laser device (2a) in such a way that the laser light, after coupling out from the photonically integrated element in the two mutually perpendicular directions (x, y), has a substantially equal divergence angle (sin(0 x ) , sin(0 y ) ), and a first coupling-out element (8a) which is operatively connected to the first light-shaping element (7a) for emitting the shaped laser light.

2. Optoelectronic arrangement according to claim 1, wherein the first light-shaping element (7a) comprises a rib region (10) extending between a first end (9a) of the first light-shaping element (7a) and a second end (9b) of the first light-shaping element (7a) opposite the first end (9a) and a plate region (11).

3. Optoelectronic arrangement according to claim 2, wherein the plate region (11) tapers from the first end (9a) of the first light-shaping element (7a) towards the second end (9b), and the rib region (10) together with the plate region (11) comprises, at least at the second end (9b), a cross-section which is point-symmetrical with respect to its center point.

4. Optoelectronic arrangement according to claim 3, wherein the rib region (10) together with the plate region (11) has a point-symmetrical cross-section extending from the second end (9b) at least 10 pm in the direction of the first end (9a), and / or wherein the second end (9b) is spaced at most 2 mm from the first coupling-out element (8a).

5. Optoelectronic arrangement according to one of claims 2 to 4, wherein the plate region (11) has at least at the first end (9a) a width (bl) which is greater than a width (b2) of the rib region (10).

6. Optoelectronic arrangement according to one of claims 2 to 5, wherein the first light-shaping element (7a) has, at least at the second end (9b), a height (h) between 100 nm and 2000 nm, preferably between 200 nm and 1400 nm and particularly preferably between 400 nm and 1200 nm.

7. Optoelectronic arrangement according to one of claims 2 to 6, wherein the rib region (10) has a height (h2) of 10% - 80% of the height (h) of the first light-shaping element (7a).

8. Optoelectronic arrangement according to one of claims 2 to 7, wherein the rib region (10) has a height (h2) between 100 nm and 600 nm at least at the second end (9b); and / or wherein the rib region (10) has a width (b2) between 500 nm and 10,000 nm, preferably between 600 nm and 2,000 nm, and particularly preferably between 1,000 nm and 1,500 nm at least at the second end (9b).

9. Optoelectronic arrangement according to one of claims 2 to 8, wherein the rib region (10) has a substantially constant width (b2) from the first to the second end (9a, 9b).

10. Optoelectronic arrangement according to one of the preceding claims, wherein the first light-shaping element (7a) is designed to substantially shape a fundamental mode of the laser light emitted by the first semiconductor laser device (2a).

11. Optoelectronic arrangement according to one of the preceding claims, wherein the first semiconductor laser device (2a) is designed to emit laser light in the visible range, in particular with a wavelength between 380 nm and 750 nm.

12. Optoelectronic arrangement according to one of the preceding claims, further comprising at least one second semiconductor laser device (2b) with a second laser light exit surface (3b) for coupling out a laser light generated by the second semiconductor laser device (2b), wherein the photonically integrated element (4) has a second laser light coupling surface (5b) which is optically coupled to the second laser light exit surface (3b), and a second waveguide section (6b) which adjoins the second laser light coupling surface (5b) and is designed to guide the laser light coupled into the second laser light coupling surface (5b).

13. Optoelectronic arrangement according to claim 12, wherein the first and the second waveguide section (6a, 6b) are optically coupled to one another and the first light-shaping element (7a) is designed to shape the laser light emitted by the first and second semiconductor laser devices (2a, 2b) in such a way that the laser light, after being coupled out of the photonically integrated element, is directed in the two mutually perpendicular directions (x, y) have an essentially equal divergence angle (sin(0 x ) , sin(0 y ) ); and wherein the first coupling-out element (8a) is operatively connected to the first light-shaping element (7a) and is designed to emit the laser light emitted by the first and second semiconductor laser devices (2a, 2b) and shaped by the first light-shaping element (7a).

14. Optoelectronic arrangement according to claim 12, wherein the photonically integrated element (4) has a second light-shaping element (7b) which is at least optically coupled to the second waveguide section (6b) and which is designed to shape the laser light emitted by the second semiconductor laser device (2b) in such a way that the laser light, after being coupled out of the photonically integrated element in the two mutually perpendicular directions (x, y), has a substantially equal divergence angle (sin(0 x ) , sin(0 y ) ); and wherein the photonically integrated element (4) has a second coupling-out element (8b) which is spaced apart from the first coupling-out element (8a) and which is operatively connected to the second light-shaping element (7b) for emitting the shaped laser light.

15. Optoelectronic arrangement according to claim 14, wherein a lateral distance between the first and second coupling-out element (8a, 8b) is at most 10 pm, preferably at most 5 pm and particularly preferably at most 3 pm.

16. Optoelectronic arrangement according to one of claims 12 to 15, wherein the first and the second semiconductor laser device (2a, 2b) are designed to emit laser light of different wavelengths.

17. Optoelectronic arrangement according to one of the preceding claims, wherein the first light-shaping element (7a) is evanescently coupled to the first waveguide section (6a).

18. Optoelectronic arrangement according to one of the preceding claims, wherein the first coupling-out element (8a) is formed by the first light-shaping element (7a).

19. A method for shaping a laser light emitted by a first semiconductor laser device (2a) of an optoelectronic arrangement (1), in particular an optoelectronic arrangement according to one of claims 1 to 19, comprising the steps: Operating the first semiconductor laser device (2a) in such a way that it emits laser light from a first laser light exit surface (3a) which has a different divergence angle (sin(0 x ) , sin(0 y ) ) has ; Coupling the laser light into a first waveguide section (6a) of a photonically integrated element (4) adjoining a first laser light coupling surface (5a); coupling the laser light into a first light-shaping element (7a) of the photonically integrated element (4) adjoining the first waveguide section (6a); Shaping the laser light in such a way that the laser light, after coupling out of the photonically integrated element in the two mutually perpendicular directions (x, y), has a substantially equal divergence angle (sin(0 x ) , sin(0 y ) ) and Coupling out the shaped laser light from the optoelectronic arrangement (1) via a first coupling-out element (8a) of the photonically integrated element (4).

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