Plasma processing device

Abstract

This plasma processing device comprises a chamber, a substrate supporting part, an edge ring, a lifting mechanism, a plasma generating part, a bias power supply, and a cooling mechanism. The substrate supporting part is disposed inside of the chamber. The lifting mechanism is configured to move the edge ring up and down. The bias power supply is configured to generate an electrical bias for drawing ions from the plasma to a substrate on the substrate supporting part. The substrate supporting part comprises a base electrically coupled to a source radio-frequency power supply and / or the bias power supply, and an electrostatic chuck on the base. A conductive ring is electrically connected to the edge ring when supporting the edge ring that is placed thereon. The cooling mechanism comprises a heat absorbing part disposed in the conductive ring.

Description

Plasma processing equipment

[0001] An exemplary embodiment of the present disclosure relates to a plasma processing apparatus.

[0002] A plasma processing apparatus is used for plasma processing of a substrate. The plasma processing apparatus includes a chamber and a substrate support. The substrate support is disposed in the chamber. The substrate support includes a base and an electrostatic chuck. A bias power supply is connected to the base, which generates an electric bias for attracting ions from the plasma to the substrate. The electrostatic chuck is configured to support the substrate and an edge ring surrounding the substrate. Patent Document 1 listed below discloses a plasma processing apparatus configured to move the edge ring up and down.

[0003] Japanese Patent Application Laid-Open No. 2020-113753

[0004] The present disclosure provides techniques for mitigating temperature rise in the edge ring.

[0005] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, an edge ring, a lift mechanism, a plasma generating unit, a bias power supply, and a cooling mechanism. The substrate support is disposed within the chamber. The edge ring is electrically conductive and disposed to surround a substrate on the substrate support. The lift mechanism is configured to move the edge ring up and down. The plasma generating unit includes a source high frequency power supply and is configured to generate plasma within the chamber. The bias power supply is configured to generate an electrical bias to attract ions from the plasma to the substrate on the substrate support. The substrate support includes a base electrically coupled to the source high frequency power supply and / or the bias power supply, and an electrostatic chuck on the base. The lift mechanism includes a conductive ring, a rod, and an actuator. The conductive ring supports the edge ring placed thereon and is electrically connected to the edge ring. The rod extends vertically below the conductive ring. The actuator is configured to move the edge ring up and down via the rod and the conductive ring. The cooling mechanism includes a heat sink disposed within the conductive ring.

[0006] According to one exemplary embodiment, the temperature rise of the edge ring can be mitigated.

[0007] FIG. 1 is a diagram for explaining an example configuration of a plasma processing system. FIG. 1 is a diagram for explaining an example configuration of a capacitively coupled plasma processing apparatus. FIG. 2 is a diagram showing a substrate support, a lift mechanism, and a cooling mechanism according to one exemplary embodiment. FIG. 3 is a diagram showing a substrate support, a lift mechanism, and a cooling mechanism according to another exemplary embodiment. FIG. 4 is a diagram showing a layout of a cooling mechanism within a conductive ring according to another exemplary embodiment. FIG. 5 is a diagram showing a layout of a cooling mechanism within a conductive ring according to yet another exemplary embodiment. FIG. 6 is a diagram showing a substrate support, a lift mechanism, and a cooling mechanism according to yet another exemplary embodiment. FIG. 7 is a diagram showing a layout of a cooling mechanism within a conductive ring according to yet another exemplary embodiment. FIG. 8 is a diagram showing a substrate support, a lift mechanism, and a cooling mechanism according to yet another exemplary embodiment. FIG. 9 is a diagram showing a substrate processing system according to one exemplary embodiment. FIG. 10 is a diagram showing a substrate support, a lift mechanism, and a cooling mechanism according to yet another exemplary embodiment. FIG. 11 is a diagram showing a substrate support, a lift mechanism, and a cooling mechanism according to yet another exemplary embodiment. FIG. 12 is a diagram showing a substrate support, a lift mechanism, and a cooling mechanism according to yet another exemplary embodiment. FIG. 13 is a diagram showing a substrate support, a lift mechanism, and a cooling mechanism according to yet another exemplary embodiment. FIG. 14 is a block diagram of a processing circuit for performing the operations described herein on a computer.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] 1 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12.

[0010] The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0011] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP).

[0012] Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0013] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various steps described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, some or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a memory unit 2a2, and a communication interface 2a3.

[0014] The control unit 2 is realized by, for example, a computer 2a. The processing unit 2a1 can be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2, and is read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3.

[0015] The processing unit 2a1 may be a central processing unit (CPU). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0016] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0017] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet configured to introduce at least one process gas into the plasma processing chamber 10.

[0018] The gas inlet includes a showerhead 13. A substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0019] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0020] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a.

[0021] In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may also have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power source 31 and / or a DC power source 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode.

[0022] When a bias RF signal and / or a DC signal (described later) is supplied to at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as the lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0023] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0024] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0025] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0026] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0027] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0028] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0029] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0030] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0031] In various embodiments, the first and second DC signals may be pulsed, in which case a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator is connected between the first DC generator 32a and the at least one lower electrode for generating the sequence of voltage pulses from the DC signal. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator.

[0032] When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. Furthermore, a voltage pulse sequence may include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first DC generator 32a and the second DC generator 32b may be provided in addition to the RF power supply 31, or the first DC generator 32a may be provided instead of the second RF generator 31b.

[0033] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0034]

[0033] Referring now to Figure 3, a substrate support 11, a lift mechanism 50, and a cooling mechanism 80 according to an exemplary embodiment may be employed in a plasma processing apparatus 1.

[0035] As described above, the substrate support 11 includes the base 1110 and the electrostatic chuck 1111. The base 1110 (or its conductive member) is electrically coupled to the source RF power supply and / or the bias power supply. The source RF power supply includes the first RF generating unit 31a and generates source RF power (i.e., a source RF signal) for plasma generation. In the example of FIG. 3 , the source RF power supply is electrically coupled to the base 1110 (or its conductive member) or the upper electrode. Note that, when the plasma processing apparatus 1 is an inductively coupled plasma processing apparatus, the source RF power supply is electrically coupled to an inductively coupled antenna.

[0036] The bias power supply includes a second RF generator 31 b and / or a first DC generator 32 a. The bias power supply is configured to generate the above-described bias RF signal and / or a sequence of voltage pulses as an electrical bias. The bias power supply is electrically coupled to the base 1110 (or a conductive member thereof).

[0037] The electrostatic chuck 1111 is disposed on a base 1110. The electrostatic chuck 1111 includes a first portion P1 and a second portion P2. The first portion P1 has a substrate support surface (i.e., a central region 111a) as its upper surface. The first portion P1 and the substrate support surface have a substantially circular planar shape. The central axis of the first portion P1 and the substrate support surface is the central axis of the substrate support portion 11, i.e., the axis AX. The axis AX is also the central axis of the plasma processing chamber 10. The first portion P1 includes the electrostatic electrode 1111b described above. When a DC voltage is applied to the electrostatic electrode 1111b from a DC power supply, an electrostatic attractive force is generated between the first portion P1 and the substrate W. The first portion P1 holds the substrate W by the generated electrostatic attractive force.

[0038] The second portion P2 extends outside the first portion P1. The second portion P2 extends circumferentially around the central axis of the substrate support 11 to surround the first portion P1. The second portion P2 has a ring support surface (i.e., annular region 111b) as its upper surface. The second portion P2 and the ring support surface have a substantially annular planar shape. The second portion P2 is configured to support an edge ring UR (upper edge ring) on ​​the ring support surface. The edge ring UR is part of the ring assembly 112. The edge ring UR is arranged to surround the substrate W on the substrate support 11. The edge ring UR is made of a conductive material such as silicon, silicon carbide, tungsten, etc.

[0039] The second portion P2 may include at least one electrostatic electrode. The second portion P2 may include electrodes BEa and BEb as the at least one electrostatic electrode. The electrodes BEa and BEb constitute bipolar electrodes. A voltage is applied to the electrodes BEa and BEb from at least one power supply so as to generate a potential difference between them. This generates an electrostatic attractive force between the edge ring UR and the second portion P2. The second portion P2 holds the edge ring UR by the generated electrostatic attractive force.

[0040] In one embodiment, the ring support surface extends at a position lower than the substrate support surface. In this case, the first portion P1 includes a sidewall surface 111s extending between the substrate support surface and the ring support surface. In this case, an edge ring LR (lower edge ring) may be disposed along the sidewall surface 111s and on the ring support surface. The edge ring LR constitutes part of the ring assembly 112. The edge ring LR may be formed of a conductive material such as silicon, silicon carbide, tungsten, or the like. Alternatively, the edge ring LR may be formed of an insulating material such as quartz, or the like. In this case, the edge ring UR is disposed on the edge ring LR. The ring support surface and the sidewall surface 111s are protected by the edge ring LR.

[0041] In one embodiment, at least one heater 1111c may be disposed within the electrostatic chuck 1111. The heater 1111c may be a resistive heating element. In the example shown in Figure 3, the heater 1111c is disposed within the electrostatic chuck 1111 and between the base 1110 and the electrostatic electrode 1111b. The heater 1111c constitutes the temperature control module described above.

[0042] The lift mechanism 50 is configured to move the edge ring UR up and down. The lift mechanism 50 includes a conductive ring 51, at least one rod 52, and an actuator 53. The lift mechanism 50 may further include at least one connecting member 54 and a heat transfer member 55.

[0043] The conductive ring 51 is configured to be electrically connected to the edge ring UR while supporting the edge ring UR placed thereon. The conductive ring 51 is formed of a metal or conductive material such as aluminum and has a generally ring shape. The conductive ring 51 is disposed outside the base 1110 in a radial direction relative to the axis line AX. The conductive ring 51 extends in a circumferential direction around the axis line AX so as to surround the base 1110 and the electrostatic chuck 1111. The conductive ring 51 is electrically coupled to the base 1110. The exposed surface of the conductive ring 51 may be covered with a plasma-resistant film. This film may be formed of a material such as aluminum oxide or yttrium fluoride, and may be formed by a method such as anodizing or thermal spraying.

[0044] The at least one rod 52 extends in the vertical direction below the conductive ring 51. The at least one rod 52 may have insulating properties. In this case, it is possible to suppress the source high-frequency power and / or the electrical bias from flowing into the actuator 53 via the at least one rod 52. In one embodiment, the lift mechanism 50 may include a plurality of rods 52 as the at least one rod 52. The plurality of rods 52 are arranged along the circumferential direction around the axis line AX. The plurality of rods 52 may be arranged at equal intervals along the circumferential direction.

[0045] The actuator 53 is disposed below the at least one rod 52 and is connected to the at least one rod 52. The actuator 53 is configured to move the edge ring UR up and down via the at least one rod 52 and the conductive ring 51. The actuator 53 may be, for example, a pneumatic or hydraulic cylinder, or a motor.

[0046] The at least one connecting member 54 provides an electrical connection between the conductive ring 51 and the base 1110 (or a conductive member thereof). The at least one connecting member 54 is configured to maintain the electrical connection in response to movement of the conductive ring 51. The at least one connecting member 54 may be configured to be deformable in response to movement of the conductive ring 51. Note that when the lift mechanism 50 includes multiple rods 52, the lift mechanism 50 may include multiple connecting members 54 as the at least one connecting member 54.

[0047] 3 , at least one connecting member 54 includes an upper portion 541, a deformed portion 542, and a lower portion 543. The upper portion 541, the deformed portion 542, and the lower portion 543 are formed from a conductive material. The upper portion 541 is disposed directly below the conductive ring 51 and is fixed to the conductive ring 51. The upper portion 541 is electrically connected to the conductive ring 51. The lower portion 543 is disposed below the upper portion 541 and is fixed to the base 1110. The lower portion 543 is electrically connected to the base 1110.

[0048] The deformable portion 542 extends between the upper portion 541 and the lower portion 543. The deformable portion 542 is electrically connected to the upper portion 541 and the lower portion 543. The upper end of the deformable portion 542 may be fixed to the conductive ring 51. The lower end of the deformable portion 542 may be fixed to the base 1110. The deformable portion 542 may be flexible in the vertical direction.

[0049] The deforming portion 542 may be a cylindrical member that is flexible in the vertical direction. The deforming portion 542 may be a bellows as shown in FIG. 3 . Alternatively, the deforming portion 542 may be a contact band that is flexible in the vertical direction. In this case, the deforming portion 542 may have a generally arcuate shape that bulges outward. Alternatively, the connecting member 54 or the deforming portion 542 may be a cylindrical member with multiple slits formed in its sidewall surface so that it can be elastically deformed in the longitudinal direction. For example, the connecting member 54 or the deforming portion 542 may be a flexure.

[0050] At least one rod 52 may penetrate the lower portion 543, pass through the deformed portion 542, and extend to a region directly below the upper portion 541. When the at least one rod 52 is moved upward by the actuator 53, the edge ring UR is moved upward via the upper portion 541 and the conductive ring 51. The edge ring UR is moved upward in accordance with a decrease in its thickness to reduce the difference between the upper end position of the plasma sheath on the substrate W and the upper end position of the plasma sheath on the edge ring UR. In the plasma processing apparatus 1, even when the edge ring UR is moved upward from the electrostatic chuck 1111, the connecting member 54 maintains an electrical connection between the base 1110 and the edge ring UR. In the plasma processing apparatus 1, the edge ring UR is not electrically floating, so that the edge ring UR can reduce the difference between the upper end position of the plasma sheath on the substrate W and the upper end position of the plasma sheath on the edge ring UR.

[0051] The lift mechanism 50 does not necessarily have to include the connecting member 54. In this case, the conductive ring 51 may be capacitively coupled to the base 1110. For example, the conductive ring 51 may be capacitively coupled to the base 1110 via a gap between the inner circumferential surface 51 a of the conductive ring 51 and the outer circumferential surface 1110S of the base 1110.

[0052] The plasma processing apparatus 1 further includes a cooling mechanism 80. The cooling mechanism 80 is configured to cool the edge ring UR. The cooling mechanism 80 includes a heat absorption portion disposed within the conductive ring 51. The cooling mechanism 80 may further include a heat radiation portion. In the example shown in FIG. 3 , the cooling mechanism 80 includes at least one heat pipe 81. The heat pipe 81 has a heat absorption portion 811 (i.e., an evaporation portion) and a heat generation portion 812 (i.e., a heat radiation portion). The heat generation portion 812 is disposed outside the conductive ring 51.

[0053] The cooling mechanism 80 may include a plurality of heat pipes 81 as the at least one heat pipe 81. The plurality of heat pipes 81 extend in the vertical direction. The heat absorption portions 811 of the plurality of heat pipes 81 may be arranged in the circumferential direction within the conductive ring 51. The heat absorption portions 811 of the plurality of heat pipes 81 may be arranged at equal intervals.

[0054] According to this plasma processing apparatus, the edge ring UR is cooled by the cooling mechanism 80, and the temperature rise of the edge ring UR is alleviated.

[0055] In one embodiment, the conductive ring 51 may include a high thermal conductivity region 511. The high thermal conductivity region 511 has a higher thermal conductivity than the thermal conductivity of the surrounding material of the conductive ring 51. For example, if the conductive ring 51 is made of aluminum, the high thermal conductivity region 511 is made of copper. The high thermal conductivity region 511 extends along the circumferential direction between the support surface of the edge ring UR in the conductive ring 51 and a heat absorption portion (e.g., heat absorption portion 811) of the cooling mechanism 80. The high thermal conductivity region 511 promotes heat transfer between the edge ring UR and the heat absorption portion of the cooling mechanism 80. Furthermore, variation in cooling capacity along the circumferential direction is suppressed.

[0056] In one embodiment, the lift mechanism 50 may further include a heat transfer member 55. The heat transfer member 55 is interposed between the conductive ring 51 and the edge ring UR. The heat transfer member 55 has electrical conductivity and elasticity. The heat transfer member 55 is, for example, a heat transfer sheet. The heat transfer member 55 promotes heat transfer between the conductive ring 51 and the edge ring UR.

[0057] Reference will now be made to FIG. 4, which is a diagram illustrating a substrate support, a lift mechanism, and a cooling mechanism according to another exemplary embodiment. The substrate support 11, the lift mechanism 50, and the cooling mechanism 80A shown in FIG. 4 can be employed in the plasma processing apparatus 1. The configuration shown in FIG. 4 will be described below in terms of differences from the configuration shown in FIG. 3. The cooling mechanism 80A shown in FIG. 4 includes a heat pipe 81A. The heat pipe 81A includes a heat absorption portion 811A (i.e., an evaporation portion) and a heat generation portion 812A (i.e., a heat radiation portion).

[0058] FIG. 5 is a diagram showing the layout of a cooling mechanism within a conductive ring according to another exemplary embodiment. FIG. 5 shows the layout of a heat pipe 81A within the conductive ring 51 in a plane perpendicular to the axis AX. As shown in FIG. 5, the heat absorption portion 811A extends circumferentially within the conductive ring 51. The heat absorption portion 811A extends approximately once around the axis AX from one end 811Aa to the other end 811Ab (i.e., the terminal end). The heat pipe 81A extends downward from the one end 811Aa to its heat generation portion 812A, which is disposed below the conductive ring 51.

[0059] Reference will now be made to FIG. 6 . FIG. 6 is a diagram illustrating the layout of a cooling mechanism within a conductive ring according to yet another exemplary embodiment. A cooling mechanism 80B illustrated in FIG. 6 can be employed in the plasma processing apparatus 1. The configuration illustrated in FIG. 6 will be described below in terms of differences from the configurations illustrated in FIGS. 4 and 5 . The cooling mechanism 80B illustrated in FIG. 6 includes a heat pipe 81B and a heat pipe 81C. The heat pipe 81B includes a heat absorption portion 811B (i.e., an evaporation portion) and a heat generation portion 812B (i.e., a heat radiation portion). The heat pipe 81C includes a heat absorption portion 811C (i.e., an evaporation portion) and a heat generation portion 812C (i.e., a heat radiation portion).

[0060] The heat absorption portion 811B of the heat pipe 81B extends approximately halfway around the axis AX on one side of a vertical plane including the axis AX, from one end 811Ba to the other end 811Bb (terminal end). The heat pipe 81B extends downward from the one end 811Ba to its heat generation portion 812B located below the conductive ring 51. The heat absorption portion 811C of the heat pipe 81C extends approximately halfway around the axis AX on the other side of the vertical plane including the axis AX, from one end 811Ca to the other end 811Cb (terminal end). The heat pipe 81C extends downward from the one end 811Ca to its heat generation portion 812C located below the conductive ring 51.

[0061] Reference will now be made to FIG. 7 , which illustrates a substrate support, a lift mechanism, and a cooling mechanism according to yet another exemplary embodiment. The substrate support 11, the lift mechanism 50, and the cooling mechanism 80C illustrated in FIG. 7 can be employed in the plasma processing apparatus 1. The configuration illustrated in FIG. 7 will be described below in terms of differences from the configurations illustrated in FIGS. 4 and 5 . The cooling mechanism 80C illustrated in FIG. 7 includes a heat pipe 81E and a heat pipe 81F. The heat pipe 81E includes a heat absorption portion 811E (i.e., an evaporation portion) and a heat generation portion 812E (i.e., a heat radiation portion). The heat pipe 81F includes a heat absorption portion 811F (i.e., an evaporation portion) and a heat generation portion 812F (i.e., a heat radiation portion).

[0062] FIG. 8 is a diagram showing the layout of a cooling mechanism within a conductive ring according to yet another exemplary embodiment. FIG. 8 shows the layout of a heat pipe 81E and a heat pipe 81F within the conductive ring 51 in a plane perpendicular to the axis AX. As shown in FIG. 8, the heat absorption portion 811E of the heat pipe 81E extends circumferentially within the conductive ring 51. The heat absorption portion 811E extends approximately once around the axis AX from one end 811Ea to the other end 811Eb (i.e., the terminal end). The heat pipe 81E extends downward from the one end 811Ea to its heat generation portion 812E, which is disposed below the conductive ring 51. The heat absorption portion 811F of the heat pipe 81F extends circumferentially within the conductive ring 51 and outside the heat absorption portion 811E. The heat absorption portion 811F extends substantially around the axis AX from one end 811Fa to the other end 811Fb (i.e., the terminal end). As shown in Fig. 8, the direction in which the heat absorption portion 811F extends from its one end 811Fa to its other end 811Fb may be opposite to the direction in which the heat absorption portion 811E extends from its one end 811Ea to its other end 811Eb. The heat pipe 81F extends downward from its one end 811Fa to its heat generation portion 812F, which is disposed below the conductive ring 51.

[0063] When the various cooling mechanisms shown in FIGS. 4 to 8 are employed, the high thermal conductivity region 511 may be provided within the conductive ring 51, similar to the configuration shown in FIG.

[0064] Reference is now made to FIG. 9 , which illustrates a substrate support, a lift mechanism, and a cooling mechanism according to yet another exemplary embodiment. The substrate support 11, the lift mechanism 50, and the cooling mechanism 80D illustrated in FIG. 9 can be employed in the plasma processing apparatus 1. The configuration illustrated in FIG. 9 will be described below in terms of differences from the configuration illustrated in FIG. 3 . The cooling mechanism 80D illustrated in FIG. 9 includes at least one Peltier element 82 instead of a heat pipe. The Peltier element 82 includes a heat absorption portion 821 and a heat generation portion 822. The heat generation portion 822 is disposed radially outward from the heat absorption portion 821 relative to the axis AX so that the heat absorption portion 821 is interposed between the base 1110 and the heat generation portion 822. The Peltier element 82 is connected to a power source 83. In the example illustrated in FIG. 9 , the heat absorption portion 821 and the heat generation portion 822 are connected to the cathode and anode of the power source 83, respectively.

[0065] In one embodiment, the cooling mechanism 80D may include a plurality of Peltier elements 82. The plurality of Peltier elements 82 may be arranged along the circumferential direction around the axis line AX within the conductive ring 51. The plurality of Peltier elements 82 may be arranged at equal intervals.

[0066] 9 , the conductive ring 51 may include a protrusion 512 that protrudes outward in the radial direction relative to the heat-generating portion 822. The protrusion 512 may include a plurality of heat dissipation fins 5121 that protrude outward in the radial direction relative to the heat-generating portion 822. Alternatively, the protrusion 512 may include a lattice structure that protrudes outward in the radial direction relative to the heat-generating portion 822. Such a protrusion 512 further enhances the cooling capacity of the edge ring UR by the at least one Peltier element 82 and the protrusion 512.

[0067] Reference will now be made to FIG. 10 . FIG. 10 is a diagram illustrating a substrate support, a lift mechanism, and a cooling mechanism according to yet another exemplary embodiment. The substrate support 11, the lift mechanism 50, and the cooling mechanism 80 illustrated in FIG. 10 can be employed in the plasma processing apparatus 1. The configuration illustrated in FIG. 10 will be described below in terms of differences from the configuration illustrated in FIG. 3 . The substrate support 11 illustrated in FIG. 10 further includes a bias electrode 1111d. The bias electrode 1111d is disposed within the electrostatic chuck 1111. The bias electrode 1111d may be disposed between the electrostatic electrode 1111b and the heater 1111c. In the plasma processing apparatus 1 having the configuration illustrated in FIG. 10 , the bias power supply is electrically connected to the bias electrode 1111d. The source RF power supply is electrically connected to the base 1110 (or its conductive member).

[0068] Reference will now be made to FIG. 11 . FIG. 11 is a diagram illustrating a substrate processing system according to an exemplary embodiment. The substrate processing system PS illustrated in FIG. 11 includes a transfer module TM, multiple process modules PM1 to PM7 (multiple substrate processing modules), and a controller MC. The substrate processing system PS may further include pedestals LPa to LPd, containers FUa to FUd, a loader module LM, an aligner AN, a load lock module LL1, a load lock module LL2, and a stocker module RSM (ring stocker). Note that the number of pedestals, containers, and load lock modules in the substrate processing system PS may be any number greater than or equal to one. The number of process modules in the substrate processing system PS may be any number greater than or equal to two.

[0069] The pedestals LPa to LPd are arranged along one edge of the loader module LM. The containers FUa to FUd are mounted on the pedestals LPa to LPd, respectively. Each of the containers FUa to FUd is, for example, a container called a FOUP (Front Opening Unified Pod). Each of the containers FUa to FUd is configured to accommodate substrates W therein.

[0070] The loader module LM has a transfer chamber. The pressure in the transfer chamber of the loader module LM is set to atmospheric pressure. The loader module LM has a transfer robot LMR. The transfer robot LMR is controlled by a controller MC. The transfer robot LMR is configured to transfer substrates W through the transfer chamber of the loader module LM. The transfer robot LMR can transfer substrates W between each of the containers FUa to FUd and an aligner AN, between the aligner AN and each of the load lock modules LL1, LL2, and between each of the load lock modules LL1, LL2 and each of the containers FUa to FUd. The aligner AN is connected to the loader module LM. The aligner AN is configured to adjust (align) the position of the substrate W.

[0071] Each of the load lock modules LL1 and LL2 is connected between the transfer chamber of the loader module LM and the transfer chamber TC of the transfer module TM. Each of the load lock modules LL1 and LL2 provides a preliminary decompression chamber. A gate valve is provided between each of the preliminary decompression chambers of the load lock modules LL1 and LL2 and the transfer chamber of the loader module LM. Furthermore, a gate valve is provided between each of the preliminary decompression chambers of the load lock modules LL1 and LL2 and the transfer chamber TC of the transfer module TM.

[0072] The transfer module TM has a transfer chamber TC (vacuum transfer chamber) and a transfer robot TR. The transfer chamber TC is configured so that the internal space thereof can be depressurized. The transfer robot TR includes a pick TP (end effector). The transfer robot TR may include at least two picks TP. In the illustrated example, the transfer robot TR includes two picks TP. One of the two picks TP is provided above the other. The transfer robot TR is configured to transfer a substrate W placed on any one of the two picks TP through the transfer chamber TC. The transfer robot TR is controlled by a controller MC.

[0073] The transfer module TM may be provided with position detection sensors S11 and S12. The position detection sensors S11 and S12 are provided on a transfer path of the substrate W and edge ring from the transfer module TM to the process module PM1. The position detection sensors S11 and S12 are used to correct the positions of the substrate W and edge ring being transferred from the transfer module TM to the process module PM1.

[0074] The position detection sensors S11 and S12 are provided, for example, near a gate valve that separates the transfer module TM and the process module PM1. The position detection sensors S11 and S12 are arranged, for example, such that the distance between them is smaller than the outer diameter of the substrate W and smaller than the inner diameter of the edge ring.

[0075] The transfer module TM may be provided with position detection sensors S21, S22, S31, S32, S41, S42, S51, S52, S61, S62, S71, and S72, similar to the position detection sensors S11 and S12. The position detection sensors S21 and S22 are provided on the transport path of the substrate W and edge ring from the transfer module TM to the process module PM2. The position detection sensors S31 and S32 are provided on the transport path of the substrate W and edge ring from the transfer module TM to the process module PM3. The position detection sensors S41 and S42 are provided on the transport path of the substrate W and edge ring from the transfer module TM to the process module PM4. The position detection sensors S51 and S52 are provided on the transport path of the substrate W and edge ring from the transfer module TM to the process module PM5. The position detection sensors S61 and S62 are provided on the transport path of the substrate W and edge ring from the transport module TM to the process module PM6. The position detection sensors S71 and S72 are provided on the transport path of the substrate W and edge ring from the transport module TM to the process module PM7.

[0076] In one embodiment, the transport robot TR is configured to transport an edge ring for a substrate support of any one of the process modules PM1 to PM7. The edge ring is an edge ring UR or a ring set including an edge ring UR and an edge ring LR. The edge ring is placed on any one of two picks TP and transported. Each pick TP has a sensor TS. The sensor TS is an optical sensor configured to measure the position of the ring member on the substrate support.

[0077] Each of the process modules PM1 to PM7 is an apparatus configured to perform dedicated substrate processing and includes a processing chamber (substrate processing chamber). A gate valve is provided between the processing chamber and the transfer chamber TC. At least one of the process modules PM1 to PM7 is a plasma processing apparatus 1.

[0078] The stocker module RSM (ring stocker) is connected to the transfer chamber TC via a gate valve. The stocker module RSM has a chamber and can accommodate multiple edge rings therein.

[0079] The controller MC is configured to control each part of the substrate processing system PS. The controller MC may be a computer including a processor, a storage device, an input device, a display device, etc. The controller MC executes a control program stored in the storage device and controls each part of the substrate processing system PS based on the recipe data stored in the storage device.

[0080] A plasma processing apparatus 1 used as a process module of a substrate processing system PS may include a substrate support 11 shown in any one of FIGS. 12 to 15. Each of FIGS. 12 to 15 illustrates a substrate support, a lift mechanism, and a cooling mechanism according to yet another exemplary embodiment. In each of the embodiments shown in FIGS. 12 to 15, the edge ring of the plasma processing apparatus 1 can be transferred by a transfer robot TR and replaced with a corresponding edge ring in a stocker module RSM. Each of the embodiments shown in FIGS. 12 to 15 may include any one of the various cooling mechanisms described above.

[0081] 12 , the substrate support 11 has a plurality of through holes extending vertically therethrough. The through holes of the substrate support 11 are arranged circumferentially around the central axis of the substrate support 11. The through holes of the substrate support 11 may be arranged at equal intervals. The edge ring LR also has a plurality of through holes formed therein that are aligned with the through holes of the substrate support 11.

[0082] 12 , the edge ring UR can be lifted upward from the substrate support 11 by a lift mechanism 60. The lift mechanism 60 includes a plurality of lift pins 61 and an actuator 62. The plurality of lift pins 61 are inserted into a plurality of through-holes in the substrate support 11, respectively. The actuator 62 is connected to the plurality of lift pins 61 and is configured to move the plurality of lift pins 61 up and down.

[0083] When the lift pins 61 are moved upward by the actuators 62 with their upper ends in contact with the edge ring UR, the edge ring UR is lifted upward from the substrate support part 11. In this state, the transport robot TR moves the pick TP below the edge ring UR. Then, as the lift pins 61 move downward, the edge ring UR is handed over to the pick TP. Thereafter, the edge ring UR is transported to the stocker module RSM by the transport robot TR.

[0084] Then, the replacement edge ring UR is transferred from the stocker module RSM into the plasma processing chamber 10 by the transfer robot TR. Then, the plurality of lift pins 61 are moved upward by the actuators 62, and the edge ring UR is handed over to the plurality of lift pins 61. Then, the pick TP moves to the outside of the plasma processing chamber 10, and the plurality of lift pins 61 move downward. As a result, the replacement edge ring UR is placed on the substrate support 11.

[0085] 13 , the substrate support 11 has a plurality of through holes extending vertically therethrough. The through holes of the substrate support 11 are arranged in a circumferential direction around the central axis of the substrate support 11. The through holes of the substrate support 11 may be arranged at equal intervals in the circumferential direction. The edge ring LR does not have a plurality of through holes aligned with the through holes of the substrate support 11.

[0086] 13 , a lift mechanism 70 can lift the ring set including the edge ring UR and the edge ring LR upward from the substrate support 11. The lift mechanism 70 includes a plurality of lift pins 71 and an actuator 72. The plurality of lift pins 71 are inserted into a plurality of through-holes in the substrate support 11, respectively. The actuator 72 is connected to the plurality of lift pins 71 and is configured to move the plurality of lift pins 71 up and down.

[0087] When the lift pins 71 are moved upward by the actuator 72 with their upper ends in contact with the edge ring LR, the ring set is lifted upward from the substrate support 11. In this state, the transport robot TR moves the pick TP below the ring set. Then, as the lift pins 71 move downward, the ring set is handed over to the pick TP. Thereafter, the ring set is transported to the stocker module RSM by the transport robot TR.

[0088] The replacement ring set is then transferred from the stocker module RSM into the plasma processing chamber 10 by the transfer robot TR. The lift pins 71 are then moved upward by the actuators 72, and the ring set is handed over to the lift pins 71. The pick TP then moves to the outside of the plasma processing chamber 10, and the lift pins 71 move downward. As a result, the replacement ring set is placed on the substrate support 11.

[0089] In the embodiment of FIG. 14 , the conductive ring 51 extends to a region above the edge ring LR so as to support the edge ring UR by its upper inner edge. In the embodiment of FIG. 14 , an outer ring OR is disposed on the conductive ring 51 to surround the edge ring UR. The outer ring OR may be formed of an insulating material such as quartz. In the embodiment of FIG. 14 , as in the embodiment of FIG. 12 , the substrate support 11 also has a plurality of through holes extending therethrough. The through holes in the substrate support 11 are arranged along the circumferential direction around the central axis of the substrate support 11. The through holes in the substrate support 11 may be arranged at equal intervals along the circumferential direction. Furthermore, the edge ring LR has a plurality of through holes formed therein that are aligned with the through holes in the substrate support 11.

[0090] The operations of the lift mechanism 60 and the transport robot TR for replacing the edge ring UR in the embodiment of FIG. 14 are similar to the operations of the lift mechanism 60 and the transport robot TR for replacing the edge ring UR in the embodiment of FIG.

[0091] In the embodiment of FIG. 15 , the edge ring LR has an outer diameter smaller than the outer diameter of the edge ring UR. The edge ring UR is disposed on the edge ring LR such that its outer edge protrudes radially outward relative to the edge ring LR. The conductive ring 51 supports the outer edge of the edge ring UR by its upper inner edge. In the embodiment of FIG. 15 , an outer ring OR is disposed on the conductive ring 51 to surround the edge ring UR. The outer ring OR may be formed from an insulating material such as quartz. Also, in the embodiment of FIG. 15 , another outer ring BOR is disposed below the upper end of the conductive ring 51 to surround the edge ring LR. The outer ring BOR may be formed from an insulating material such as quartz.

[0092] 15, the substrate support 11 is provided with a plurality of through holes passing therethrough, similar to the embodiment of FIG. 13. The plurality of through holes in the substrate support 11 are arranged along the circumferential direction around the central axis of the substrate support 11. The plurality of through holes in the substrate support 11 may be arranged at equal intervals along the circumferential direction. The edge ring LR does not have a plurality of through holes aligned with the plurality of through holes in the substrate support 11.

[0093] The operation of the lift mechanism 70 and the transport robot TR for exchanging the ring set in the embodiment of FIG. 15 is similar to the operation of the lift mechanism 60 and the transport robot TR for exchanging the ring set in the embodiment of FIG.

[0094] In yet another exemplary embodiment, the plasma processing apparatus 1 may be configured to selectively replace only the edge ring UR or the above-described ring set. For example, the plasma processing apparatus 1 may have both the lift mechanism 60 and the lift mechanism 70. In this case, the plurality of lift pins 61 and the plurality of lift pins 71 are arranged alternately along the circumferential direction. No through-holes are formed in the edge ring LR above each of the plurality of lift pins 71. In this case, it is possible to selectively replace only the edge ring UR using the lift mechanism 60 as shown in FIG. 12 or to replace the ring set including the edge ring UR and the edge ring LR using the lift mechanism 70 as shown in FIG. 13. Alternatively, it is possible to selectively replace only the edge ring UR using the lift mechanism 60 as shown in FIG. 14 or to replace the ring set including the edge ring UR and the edge ring LR using the lift mechanism 70 as shown in FIG. 15.

[0095] An example of at least one processing circuit that can be used as the controller 2 in the plasma processing apparatus 1 and / or the controller MC in the substrate processing system will be described below. FIG. 16 is a block diagram of a processing circuit that performs the operations described herein on a computer. FIG. 16 illustrates a processing circuit 130 that can be used to control processing on any computer. The descriptions or blocks in the flowcharts represent modules, segments, or portions of code that include one or more executable instructions for implementing specific logical functions or steps of the processing.

[0096] As will be understood by one of ordinary skill in the art, other examples having functions that can be performed in an order different from that shown or described, such as substantially concurrently or in reverse order, depending on the functionality involved, are included within the scope of exemplary embodiments of the present disclosure. The various elements, features, and processes described herein may be used independently of one another or may be combined in various ways. All possible combinations and subcombinations may be included within the scope of the present disclosure.

[0097] In Figure 16, processing circuitry 130 includes a CPU 1200 that performs one or more of the control processes described above and / or below. Process data and instructions may be stored in memory 1202. These process data and instructions may be stored on a storage medium disk 1204, such as a hard disk drive (HDD) or a portable storage medium, or may be stored remotely. Furthermore, the present disclosure as claimed is not limited by the form of computer-readable medium on which instructions for processes according to the present invention are stored. For example, these instructions may be stored on a CD, DVD, flash memory, RAM, ROM, PROM, EPROM, EEPROM, hard disk, or any other information processing device, such as a server and / or computer, with which processing circuitry 130 communicates.

[0098] Furthermore, the claimed disclosure may be provided as a utility application, a background daemon, a component of an operating system, or a combination thereof, and may execute in conjunction with CPU 1200 and an operating system known to those skilled in the art, such as Microsoft Windows®, UNIX®, Solaris®, LINUX®, Apple MAC-OS, etc.

[0099] The hardware elements constituting the processing circuit 130 can be realized by various circuit elements. Furthermore, each function of the above-described embodiments can be implemented by a circuit including one or more processing circuits. As shown in FIG. 16, the processing circuit includes a specifically programmed processing device, such as a processing device (CPU 1200). The processing circuit also includes devices such as application specific integrated circuits (ASICs) or conventional circuit components configured to implement the described functions.

[0100] 16, the processing circuitry 130 includes a CPU 1200 that performs the above-described processing. The processing circuitry 130 may be a general-purpose computer or a specific dedicated machine. In one embodiment, the processing circuitry 130 functions as a specific dedicated machine when the processing device (CPU 1200) is programmed to control each part of the plasma processing device 1 and / or each part of the substrate processing system PS.

[0101] Alternatively or additionally, CPU 1200 may be implemented on an FPGA, ASIC, PLD, or using discrete logic circuitry, as will be appreciated by those skilled in the art. Furthermore, CPU 1200 may be implemented as multiple processing units cooperating to perform in parallel the instructions of the processes of the present invention described above.

[0102] The processing circuitry 130 of FIG. 16 also includes a network controller 1206, such as an Intel Ethernet PRO network interface card from Intel Corporation of America, for interfacing with a network 1228. As can be appreciated, the network 1228 may be a public network such as the Internet, a private network such as a LAN or WAN, or any combination thereof, and may also include sub-networks such as PSTN or ISDN. The network 1228 may also be wired, such as an Ethernet network, or wireless, such as a cellular network including EDGE, 3G, and 4G wireless cellular systems. The wireless network may also be Wi-Fi, Bluetooth, or any other known form of wireless communication.

[0103] The processing circuitry 130 further includes a display device controller 1208, such as a graphics card or graphics adapter, for interfacing with a display device 1210, such as a monitor. A general-purpose I / O interface 1212 interfaces with a keyboard and / or mouse 1214 and a touch panel 1216, which may be integral with or separate from the display device 1210. The general-purpose I / O interface also connects to various peripheral devices 1218, such as printers and scanners.

[0104] The storage controller 1224 is connected to the storage media disk 1204 via a communication bus 1226, such as ISA, EISA, VESA, PCI, etc., and all components of the processing circuit 130 are connected to each other. The display device 1210, keyboard and / or mouse 1214, and the general features and functions of the display device controller 1208, storage controller 1224, network controller 1206, audio controller 1220, and general purpose I / O interface 1212 are not described herein for the sake of brevity, as they are well known.

[0105] The exemplary circuit elements described in this disclosure may be substituted with other elements and may have different structures than the examples described herein. Furthermore, circuits configured to implement the features described herein may be implemented in multiple circuit units (e.g., chips), or these features may be combined into the circuitry of a single chipset.

[0106] The functions and features described herein may also be performed by various distributed components of the system. For example, one or more processing devices may perform the functions of these systems, where the processing devices are distributed across multiple components communicating within a network. Distributed components may include various human interface and communication devices (such as display monitors, smartphones, tablets, personal digital assistants (PDAs)), as well as one or more client and server machines that can share processing.

[0107] The network may be a private network, such as a LAN or WAN, or a public network, such as the Internet. Input to the system may be received by direct user input or remotely in real time or as a batch process. Furthermore, some of the embodiments may be implemented on modules or hardware other than the same as those described above. Accordingly, other embodiments are within the scope of the claims.

[0108] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0109] For example, any one of the above-mentioned containers FUa to FUd may be used as the stocker module RSM.

[0110] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E15] below.

[0111] a substrate support disposed within the chamber; an edge ring having electrical conductivity and disposed to surround a substrate on the substrate support; a lift mechanism configured to move the edge ring up and down; a plasma generation unit including a source high frequency power supply and configured to generate plasma in the chamber; a bias power supply configured to generate an electrical bias to attract ions from the plasma to the substrate on the substrate support; and a cooling mechanism configured to cool the edge ring, wherein the substrate support includes: a base electrically coupled to the source high frequency power supply and / or the bias power supply; and an electrostatic chuck on the base; and the lift mechanism includes: a conductive ring that is electrically connected to the edge ring when supporting the edge ring placed thereon, the conductive ring being disposed outside the base in a radial direction with respect to a central axis of the base and electrically coupled to the base; a rod extending vertically below the conductive ring; and an actuator configured to move the edge ring up and down via the rod and the conductive ring. The plasma processing apparatus, wherein the cooling mechanism includes a heat absorption part disposed within the conductive ring.

[0112] [E2] The plasma processing apparatus according to E1, wherein the cooling mechanism includes at least one heat pipe having a heat-generating portion disposed outside the heat absorption portion and the conductive ring.

[0113] [E3] The plasma processing apparatus according to E2, wherein the cooling mechanism includes a plurality of heat pipes as the at least one heat pipe, the plurality of heat pipes extend along a vertical direction, and heat absorption portions of the plurality of heat pipes are arranged along a circumferential direction within the conductive ring.

[0114] [E4] The plasma processing apparatus according to E2, wherein the heat absorption portion extends in a circumferential direction within the conductive ring.

[0115] [E5] A plasma processing apparatus according to any one of E1 to E4, wherein the conductive ring includes a high thermal conductivity region having a thermal conductivity higher than that of the surrounding material of the conductive ring, and the high thermal conductivity region extends circumferentially between the support surface of the edge ring and the heat absorption portion of the conductive ring.

[0116] [E6] The plasma processing apparatus according to E1, wherein the cooling mechanism includes at least one Peltier element having the heat absorption portion and the heat generation portion, and the heat generation portion is disposed radially outward relative to the heat absorption portion so that the heat absorption portion is interposed between the base and the heat generation portion.

[0117] [E7] The plasma processing apparatus according to E6, wherein the conductive ring includes a protrusion that protrudes outward in the radial direction relative to the heat generating portion.

[0118] [E8] The plasma processing apparatus according to E7, wherein the protrusion includes a plurality of heat dissipation fins that protrude outward in the radial direction relative to the heat generating portion.

[0119] [E9] The plasma processing apparatus according to E7, wherein the protrusions include a lattice structure that protrudes outward in the radial direction relative to the heat generating portion.

[0120] [E10] The plasma processing apparatus according to any one of E1 to E9, wherein the lift mechanism further includes a heat transfer member interposed between the conductive ring and the edge ring, and the heat transfer member has conductivity and elasticity.

[0121] [E11] The plasma processing apparatus according to any one of E1 to E10, wherein the conductive ring is capacitively coupled to the base.

[0122] [E12] The plasma processing apparatus according to any one of E1 to E10, wherein the lift mechanism further includes a connection member that electrically connects the conductive ring and the base.

[0123] [E13] The plasma processing apparatus of any of E1 to E12, wherein the edge ring is an upper edge ring, and the plasma processing apparatus further includes a lower edge ring on which the upper edge ring is disposed, and the electrostatic chuck includes: a first portion having a substrate support surface; and a second portion having a ring support surface extending at a position lower than the substrate support surface and extending outside the first portion, and the first portion includes a sidewall surface extending between the substrate support surface and the ring support surface, and the lower edge ring is disposed along the sidewall surface and on the ring support surface.

[0124] [E14] The plasma processing apparatus according to any one of E1 to E13, further comprising a heater disposed within the electrostatic chuck.

[0125] [E15] The plasma processing apparatus according to any one of E1 to E14, further comprising a bias electrode disposed within the electrostatic chuck, the source high frequency power supply being electrically connected to the base, and the bias power supply being electrically connected to the bias electrode.

[0126] 1... plasma processing apparatus, 10... plasma processing chamber, 11... substrate support section, 12... plasma generation section, 20... gas supply section, 50... lift mechanism, 51... conductive ring, 80, 80A to 80D... cooling mechanism.

Claims

1. A device comprising: a chamber; a substrate support disposed within the chamber; an edge ring having electrical conductivity and disposed to surround a substrate on the substrate support; a lift mechanism configured to move the edge ring up and down; a plasma generation unit including a source high frequency power supply and configured to generate plasma in the chamber; a bias power supply configured to generate an electrical bias to attract ions from the plasma to the substrate on the substrate support; and a cooling mechanism configured to cool the edge ring; wherein the substrate support includes: a base electrically coupled to the source high frequency power supply and / or the bias power supply; and an electrostatic chuck on the base; and wherein the lift mechanism includes: a conductive ring that is electrically connected to the edge ring when supporting the edge ring placed thereon, the conductive ring being disposed outside the base in a radial direction relative to a central axis of the base and electrically coupled to the base; a rod extending vertically below the conductive ring; and an actuator configured to move the edge ring up and down via the rod and the conductive ring. The plasma processing apparatus, wherein the cooling mechanism includes a heat absorption portion disposed within the conductive ring.

2. The plasma processing apparatus according to claim 1, wherein said cooling mechanism includes at least one heat pipe having a heat absorbing portion and a heat generating portion disposed outside said conductive ring.

3. The plasma processing apparatus according to claim 2, wherein the cooling mechanism includes a plurality of heat pipes as the at least one heat pipe, the plurality of heat pipes extending in a vertical direction, and the heat absorption portions of the plurality of heat pipes are arranged in a circumferential direction within the conductive ring.

4. The plasma processing apparatus according to claim 2, wherein said heat absorption portion extends circumferentially within said conductive ring.

5. A plasma processing apparatus according to any one of claims 1 to 4, wherein the conductive ring includes a high thermal conductivity region having a thermal conductivity higher than that of the surrounding material of the conductive ring, and the high thermal conductivity region extends circumferentially between the support surface of the edge ring and the heat absorption portion of the conductive ring.

6. The plasma processing apparatus according to claim 1, wherein the cooling mechanism includes at least one Peltier element having the heat absorption portion and the heat generation portion, and the heat generation portion is disposed radially outward relative to the heat absorption portion so that the heat absorption portion is interposed between the base and the heat generation portion.

7. The plasma processing apparatus according to claim 6, wherein said conductive ring includes a protrusion that protrudes outward in the radial direction relative to said heat generating portion.

8. The plasma processing apparatus according to claim 7, wherein the protrusion includes a plurality of heat dissipation fins that protrude outward in the radial direction relative to the heat generating portion.

9. The plasma processing apparatus according to claim 7, wherein the protrusions include a lattice structure that protrudes outward in the radial direction relative to the heat generating portion.

10. A plasma processing apparatus according to any one of claims 1 to 4 and 6 to 9, wherein the lift mechanism further includes a heat transfer member interposed between the conductive ring and the edge ring, and the heat transfer member has electrical conductivity and elasticity.

11. The plasma processing apparatus according to any one of claims 1 to 4 and 6 to 9, wherein the conductive ring is capacitively coupled to the base.

12. The plasma processing apparatus according to any one of claims 1 to 4 and 6 to 9, wherein the lift mechanism further comprises a connection member that electrically connects the conductive ring and the base.

13. The plasma processing apparatus of any one of claims 1 to 4 and 6 to 9, wherein the edge ring is an upper edge ring, the plasma processing apparatus further comprises a lower edge ring on which the upper edge ring is disposed, the electrostatic chuck comprises: a first portion having a substrate support surface; and a second portion having a ring support surface extending at a position lower than the substrate support surface and extending outside the first portion, the first portion including a sidewall surface extending between the substrate support surface and the ring support surface, and the lower edge ring is disposed along the sidewall surface and on the ring support surface.

14. The plasma processing apparatus according to any one of claims 1 to 4 and 6 to 9, further comprising a heater disposed within the electrostatic chuck.

15. The plasma processing apparatus according to any one of claims 1 to 4 and 6 to 9, further comprising a bias electrode disposed within the electrostatic chuck, the source high frequency power supply being electrically connected to the base, and the bias power supply being electrically connected to the bias electrode.

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