Spin current generator using topological insulator

Abstract

The present invention relates to a spin current generator using a topological insulator, the spin current generator comprising: a substrate (100); an insulating film (200) disposed on the substrate (100); a source electrode (301) disposed on the insulating film (200); a drain electrode (302) disposed on the insulating film (200); and a gate electrode (403) disposed on the substrate (100), wherein the insulating film (200) is made of a SiC topological insulator. The spin current generator using a topological insulator according to the present invention is a passive element (T) that is a spin current generator, can be used for both alternating current and direct current, and can be applied to a heat dissipation plate or a heat dissipation system in an electronic circuit system having a large load capacity.

Description

Spin current generation device using topological insulators

[0001] The present invention relates to a spin current generation device using a topological insulator, and more specifically, to a spin current generation device using a topological insulator that blocks leakage current by using spin current generated in a SiOC thin film.

[0002] Energy exists in electric and magnetic fields. According to energy symmetry, electrons are particles and generate electric energy, while spin, as an antiparticle, generates magnetic energy. Particles generate charge currents, and antiparticles generate spin currents, and the law of conservation of energy is completed by particles and antiparticles. Energy exists in kinetic and thermal energy. Particles generate electric fields as they move forward, and antiparticles generate magnetic fields as they rotate. To design an electronic circuit system according to the energy symmetry of particles and antiparticles, four passive components are required: resistors (R), inductors (L), capacitors (C), and topological insulators (T), derived from the relationships between voltage, current, flux, and charge. Resistors include ohmic resistance and magnetoresistance, with ohmic resistance being a heat-generating component and magnetoresistance being a heat-absorbing component. The already known passive components R, L, and C make it easy to control the kinetic energy of electrons, but it is relatively difficult to control their thermal energy. Topological insulators (T) possess magnetoresistance properties, and while it is easy to control thermal energy using the kinetic energy of spin, it is difficult to generate spin current. The present invention relates to a method for fabricating a topological insulator (T) capable of spontaneously generating spin current and magnetic energy into a component, thereby generating spin current and magnetic energy that can be applied to electronic circuit systems. This method involves fabricating a magnetoresistance element (T).

[0003] The passive element T is a magnetoresistive element. Magnetoresistive elements possess the negative temperature coefficient (NTC) characteristic, which means that current decreases as temperature increases, allowing them to control temperature. Topological insulators are devices that generate spin currents that can reduce heat generation. Because topological insulators possess magnetoresistive characteristics, they can be used to implement the passive element T.

[0004] In order to eliminate the heat generation phenomenon that is a problem in semiconductor process-based technologies such as HBM, TSV, hybrid bonding, and interposer technology, the development of a topological insulator that generates spin current is required.

[0005] To save energy, nonlinear loads such as inverters, rectifiers, phase controllers, and converters are increasing. These nonlinear loads are increasingly being used for power conversion, speed control, precision control, and energy conservation. However, as nonlinear loads increase, they distort waveforms and generate harmonics, degrading power quality. To improve power quality, a technology utilizing spinning current is needed as a fundamental solution to harmonic distortion.

[0006] The passive element T can generate spin current by utilizing the tunneling properties of topological insulators. Since the spin current has the opposite direction to the charge current, it can block leakage current while simultaneously reducing heat generation. When the resistance is 0, the spin current that becomes a supercurrent is called Dirac fermion spin current, and when the resistance is not 0, it is called Weyl fermion spin current.

[0007] Supercurrent is created when spin current is converted into charge current. The energy conversion device of spin current and charge current is a topological insulator. A topological insulator is a magnetic energy generator that creates spin current by changing the phase of the charge current. Therefore, when a topological insulator, which is a magnetic field generator, is applied to circuit design, the operating voltage range is expanded, enabling the design of a wide-bandwidth circuit with current control.

[0008] Overheating is becoming a problem in semiconductor devices / components such as small-sized memory semiconductors, HBM, interposers, and TSV technology.

[0009] A silicon interposer is a substrate comprised of numerous TSVs (through silicon vias). TSV (through silicon via) technology is gaining attention as a semiconductor processing technology that can pack a lot of memory into a small space. However, heat generation is becoming a problem.

[0010] The present invention has been devised to solve the above-mentioned problem, and in order to eliminate thermal noise and leakage current included in the charge current, the present invention connects a passive element T, which is a topological insulator that generates spin current in the middle of the charge current flow, so that thermal noise and leakage current are eliminated while passing through the passive element T, which is a topological insulator.

[0011] Magnetoresistance according to the present invention means the electrical resistance of a topological insulator having both NTC (negative temperature coefficient) and PTC (positive temperature coefficient) characteristics, and it is intended to provide a spin current generating passive element T using a topological insulator having magnetoresistance characteristics.

[0012] According to the present invention, inductors and capacitances are mainly used in functional circuit design to generate a phase difference of signals, but harmonics are generated and reactive power is generated, which lowers the power factor. Therefore, a passive element T, which is a spin current generator capable of increasing the power factor, is provided.

[0013] The SiOC phase insulator according to the present invention fundamentally solves the leakage current problem, thereby solving the heat generation phenomenon of LEDs and eliminating the heat generation phenomenon in interposers and HBM (High Bandwidth Memory), thereby solving the bottleneck phenomenon of data centers.

[0014] The present invention aims to provide a passive component that is free from the limitation effect of threshold voltage and enables circuit design with wide bandwidth characteristics by using a spin current generator using a topological insulator.

[0015] The present invention seeks to provide a surge current generator using a SiOC phase insulator to a surge circuit or grounding circuit that prevents overcurrent.

[0016] A spin current generating device using a topological insulator according to an embodiment of the present invention for solving the above-described problem comprises: a substrate (100); an insulating film (200) disposed on the substrate (100); a source electrode (301) disposed on the insulating film (200); a drain electrode (302) disposed on the insulating film (200); and a gate electrode (403) disposed on the substrate (100); wherein the insulating film (200) is made of a SiOC topological insulator.

[0017] In addition, a spin current generating device using a topological insulator according to one embodiment of the present invention includes a substrate (100); an insulating film (200) disposed on the substrate (100); a source electrode (301) disposed on the insulating film (200); and a drain electrode (302) disposed on the insulating film (200); wherein the substrate (100) operates as a gate electrode, and the insulating film (200) is made of a SiOC topological insulator.

[0018] According to another embodiment of the present invention, the device may further include a source wiring (401) disposed on the source electrode (301); and a drain wiring (402) disposed on the drain electrode (302).

[0019] According to another embodiment of the present invention, the drain electrode (301), the source electrode (302), the drain wiring (402), and the source wiring (401) may be formed in a plate type.

[0020] According to another embodiment of the present invention, the substrate (100) may further include a heat sink (1300) formed on the back surface thereof.

[0021] According to another embodiment of the present invention, the substrate (100) may further include a fixed substrate (1400) formed on the back surface of the substrate (100) and on the source wiring (401) and the drain wiring (402), respectively.

[0022] According to another embodiment of the present invention, the present invention may further comprise an inner case (1700) that accommodates and fixes the fixed substrate (1400); an outer case (1800) that accommodates the inner case (1700); a source extension wiring (403) that extends from the source wiring (401) and is formed in a plate type on the upper surface of the outer case (1800); and a drain extension wiring (404) that extends from the drain wiring (402) and is formed in a plate type on the upper surface of the outer case (1800).

[0023] According to another embodiment of the present invention, when the voltage applied to the gate electrode (303) is a negative (-) bias, a (+) current flows, and when the voltage applied to the gate electrode is a positive (+) bias, a (-) current flows, operating as a spin current, so that a tunneling phenomenon can occur.

[0024] According to another embodiment of the present invention, as the voltage of the drain electrode (302) decreases, the spin current increases, so that the tunneling phenomenon can occur more easily.

[0025] According to another embodiment of the present invention, when the voltage applied to the gate electrode (303) is 0, the resistance of the gate electrode (303) becomes 0, and a supercurrent can be generated by quantum superposition in which a (+) current and a (-) current are generated simultaneously.

[0026] According to another embodiment of the present invention, the insulating film (200) is a magnetoresistive film and can operate as an NTC (negative temperature controller).

[0027] According to another embodiment of the present invention, the insulating film (200) may further include a plurality of spin electrodes (304) arranged in a row in the space between the source electrode (301) and the drain electrode (302).

[0028] According to another embodiment of the present invention, the spin current generating device is connected to an interposer disposed on a large-area substrate through a trapping wiring to block a leakage current of the interposer, and the interposer is configured to include a TSV (Through Silicon Via) formed on the silicon layer and a SiOC thin film formed on a surface of the TSV (Through Silicon Via) inside the silicon layer, and is disposed on a large-area substrate composed of a silicon or glass plate, and is connected to the phase insulator transistor and the SiOC layer through the trapping wiring to block a leakage current of a semiconductor disposed on the interposer.

[0029] A spin current generating device using a phase insulator according to the present invention can reduce the heat generation phenomenon of a load terminal and eliminate leakage current when a spin current is generated while operating as a passive element (T) in an AC and DC circuit.

[0030] The passive element T, which is a spin current generation device using a topological insulator according to the present invention, can be applied to quantum tunneling spin current, spin current generation device technology, harmonic control technology, leakage current blocking technology, magnetic energy generation device, and thermal energy control technology.

[0031] The passive element T, which is a spin current generating device using a topological insulator according to the present invention, is an element that exhibits symmetry, quantum entanglement, quantum fluctuation, and quantum convolution effects.

[0032] The spin current that appears as a result of energy momentum using the topological insulator according to the present invention is consistent with the quantum tunneling phenomenon of the Dirac equation, and the spin current can be generated by using the phenomena of quantum entanglement and quantum fluctuation.

[0033] Magnetoresistance characteristics are created as a spin current generation effect produced by the topological insulator according to the present invention, and since spin current flows to the surface of the topological insulator and the surface current becomes a charge current, magnetic energy can be easily converted into electric energy.

[0034] According to the present invention, the R, L, C, and T relationships can be derived based on energy symmetry. The heat generation phenomenon occurring in ohmic resistance and the heat absorption phenomenon occurring in magnetoresistance require the existence of a T parameter due to symmetry, and the T parameter is a factor for spin current.

[0035] A surface current must exist between the spin current and the charge current, and the topological insulator according to the present invention can generate a surface current and acts as an intermediary that generates the spin current and converts it into a charge current. The resistance of the topological insulator has a magnetoresistance characteristic of 0 to ∞ and a structure that is advantageous for the surface current to absorb heat, and ultimately satisfies Maxwell's equations.

[0036] As artificial intelligence (AI) technology advances, and technologies like data centers and autonomous vehicles advance, the importance of technologies that reduce leakage current is growing. This is because, as the physical size of semiconductor devices decreases with technological advancements, leakage current increases, generating heat and increasing power consumption. Even if power consumption decreases with smaller devices, leakage current and heat generation ultimately lead to increased power consumption.

[0037] In order to reduce heat generation and power consumption, it is necessary to develop technologies that fundamentally eliminate leakage current, harmonic signals, and noise. The topological insulator according to the present invention does not generate leakage current due to the magnetoresistance characteristic that converts charge current into spin current and the quantum tunneling phenomenon. The topological insulator according to the present invention is a topological insulator in which spin current is generated and the tunneling phenomenon occurs as an amorphous SiOC thin film deposited on a silicon semiconductor.

[0038] The spin current generated in the topological insulator according to the present invention can fundamentally resolve leakage current, noise, and heat generation issues. In particular, it can address heat generation in structures and devices utilizing semiconductors, such as small LEDs, FINFETs, GAA transistors, DRAM semiconductors, or TSVs, interposers, and HBM hybrid bonding technologies, and can also address bottlenecks in data centers.

[0039] FIGS. 1 to 18 are drawings for explaining a technology related to a spin current generation device using a phase insulator according to the present invention.

[0040] FIGS. 19 to 21 are drawings for explaining a spin current generation device using a phase insulator transistor installed in an interposer according to an embodiment of the present invention.

[0041] FIG. 22 is a drawing illustrating a spin current generating device using a phase insulator according to one embodiment of the present invention.

[0042] FIG. 23 is a drawing illustrating a spin current generating device using a phase insulator according to another embodiment of the present invention.

[0043] FIG. 24 and FIG. 25 are drawings illustrating a spin current generating device using a phase insulator according to another embodiment of the present invention.

[0044] Referring to FIGS. 26 and 27, this is a drawing for explaining a method of installing a passive element (T) in an AC circuit of a spin current generating device using a phase insulator according to one embodiment of the present invention.

[0045] FIG. 28 is a drawing illustrating a spin current generating device using a phase insulator according to another embodiment of the present invention.

[0046] FIG. 29 is a drawing illustrating a spin current generating device using a phase insulator according to another embodiment of the present invention.

[0047] FIG. 30 is a drawing illustrating a spin current generating device using a phase insulator according to another embodiment of the present invention.

[0048] FIG. 31 is a drawing illustrating a spin current generating device using a phase insulator according to another embodiment of the present invention.

[0049] FIGS. 32 to 34 are drawings for explaining the results of removing noise components by a spin current generating device using a phase insulator transistor according to an embodiment of the present invention.

[0050] FIG. 35 is a drawing illustrating a two-terminal notation method when a spin current generating device using a phase insulator according to one embodiment of the present invention is used as a magnetoresistive element.

[0051] The present invention is susceptible to various modifications and embodiments. Specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, but rather to encompass all modifications, equivalents, and alternatives falling within the spirit and technical scope of the present invention.

[0052] However, when describing embodiments, if a detailed description of a related known function or configuration is judged to unnecessarily obscure the gist of the present invention, a detailed description thereof will be omitted. Furthermore, the sizes of each component in the drawings may be exaggerated for illustrative purposes and do not necessarily represent the sizes actually applied.

[0053] Additionally, throughout the specification, when a component is referred to as being "connected" or "connected" to another component, it should be understood that the component may be directly connected or connected to the other component, but may also be connected or connected via another component in between, unless otherwise specifically stated. Additionally, throughout the specification, when it is said that a part "includes" a component, this does not exclude other components, but rather includes other components, unless otherwise specifically stated.

[0054] The present invention relates to a passive T element, which is a magnetoresistive electronic component using a topological insulator that creates a spin current using a SiOC thin film and creates a leakage current blocking device using the spin current.

[0055] When leakage current occurs, heat is generated due to thermal resistance, and this heat generation causes problems such as increased power consumption. The phase insulator according to the present invention has the functions of blocking leakage current and eliminating harmonics and thermal noise, and can be used as a grounding element by connecting it to a grounding wire.

[0056] The topological insulator according to the present invention does not generate leakage current due to the magnetoresistive characteristic that converts leakage current into spin current and the superconducting characteristic that generates supercurrent. Therefore, the topological insulator SiOC according to the present invention can provide an ideal grounding function by the magnetoresistive characteristic spin current. The amorphous SiOC thin film is a room-temperature superconducting topological insulator that generates supercurrent, which is a spin current.

[0057] The phase insulator according to the present invention can solve the problems of heat generation due to leakage current, harmonics, noise, and ohmic resistance, and can therefore be applied to interposer, TSV (Through Silicon Via) technology, and hybrid bonding technology.

[0058]

[0059] 1. The necessity of a magnetoresistive passive element T

[0060] Voltage is electrical energy, and the flow of energy can be expressed as charge current and spin current. To operate an electronic system, charge current passive components R, L, and C, as well as spin current passive components T, are required for circuit design.

[0061] Referring to Figure 1, among the R, L, C, and T passive components essential for circuit design, there is a passive component T that has not yet been developed. Current includes charge current caused by particles and spin current caused by antiparticles. As a spin current generator, passive component T is a passive component that operates on magnetic energy.

[0062] Referring to Figure 2, a spin current generator is required because there is a region where spin current is generated by antiparticles in order to complete Maxwell's equations, which are electromagnetic field equations.

[0063] [Mathematical Formula 1]

[0064]

[0065]

[0066]

[0067]

[0068] R, L, and C are passive components that operate above the threshold voltage, while the passive component T operates below the threshold voltage. When designing a circuit, the power factor decreases due to noise such as leakage current and harmonic signals. In contrast, spin current has the function of removing noise components and improving the power factor. Topological insulators generate spin current. Spin current generation devices using topological insulators improve the stability of transistors.

[0069]

[0070] 2. Depletion layer and threshold voltage

[0071] The PN junction of a semiconductor is called a depletion layer and a potential barrier. The potential barrier created by the depletion layer creates a threshold voltage. Ideally, current should not flow below the threshold voltage, but in reality, current flows even below the threshold voltage, and this is called leakage current. Because of leakage current, memory semiconductors must operate at a voltage above the threshold voltage. If leakage current disappears, semiconductor manufacturing becomes possible without voltage constraints, and therefore, technology to fundamentally block leakage current is necessary.

[0072] Referring to Figure 3, threshold voltage is related to mobility. When the threshold voltage is low, mobility increases, and when the threshold voltage increases, mobility decreases. As mobility increases, leakage current also increases. FINFETs, GAA transistors, and DRAM semiconductors have low threshold voltages due to their small size, which increases mobility, but at the same time, there is a disadvantage of increased leakage current. Since the increase in leakage current appears as a heat generation phenomenon, a technology is needed that prevents leakage current from flowing even below the threshold voltage.

[0073] Switching elements are essential in digital circuit design, and among semiconductor devices, the transistor is the most fundamental. Typical switching elements are memory and power semiconductors. Memory has a low threshold voltage, while power semiconductors have a high threshold voltage. As memory devices shrink in size, their threshold voltage decreases, leading to a corresponding increase in leakage current, making it impossible to ignore. Power semiconductors, on the other hand, have a higher threshold voltage, resulting in greater resistance, making heat generation unavoidable.

[0074] Referring to Figure 4, since threshold voltage is a measure of electron mobility, most semiconductor devices cannot escape leakage current and heat generation due to threshold voltage. One way to overcome threshold voltage is to utilize spin current.

[0075] A topological insulator is a spin current generator that creates a spin current and converts it into a charge current through a surface current, and is a passive element T that completes Maxwell's equations.

[0076]

[0077] 3. Spin current generation device: The need for a topological insulator

[0078] Referring to Figure 5, the energy momentum of the spin is faster for down spin and slower for up spin. This means that the down spin on the left side of the current-voltage plane moves faster. The up spin is slowing down as its energy is converted into a particle (electron). The down spin is an antiparticle with a fast speed. Depending on the resistance, the spin can move vertically or horizontally.

[0079] The symmetry of odd and even numbers due to spin current is also applied to the operating principle of the magnetic energy passive element T.

[0080] Spin energy momentum, which is composed of thermal energy and kinetic energy, is generated first by down spin containing thermal energy, and then by up spin that can generate kinetic energy. Passive components related to particles are R, L, and C, and the T passive component is related to the spin current, which is an antiparticle. Energy gap (E g ) is the voltage region where the spin current operates, and the threshold voltage refers to the voltage at which particles start to operate with kinetic energy.

[0081] When resistance and temperature are proportional, kinetic energy increases, and when resistance and temperature are inversely proportional, thermal energy increases. When the resistance is 0 and the temperature becomes 0 degrees, superconducting properties appear, and supercurrent is generated. The thermal energy of spin is a magnetic field. When the temperature is 0 degrees, the thermal energy becomes 0, and this is the case when there is no magnetic field. The tunneling phenomenon and the quantum mutation spin Hall effect, which generate current even without a magnetic field, mean the generation of supercurrent. All down spins are odd and are energy (voltage), and all up spins are even and are current. Even currents are of two types: spin current (supercurrent) with 0 resistance and spin current with non-zero resistance. Supercurrent is Dirac fermion spin current with 0 resistance, and spin current with non-zero resistance is Weyl fermion spin current. As resistance increases, the Weylfermion spin current transforms into a surface current, becoming a charge current capable of moving particles. Because a spontaneous phase transition of spin energy occurs at the threshold voltage, particles (electrons) receive a continuous and stable supply of spin energy, satisfying the symmetry principle that increases the mobility of the charge current.

[0082]

[0083] 4. Relationship between capacitance and supercurrent of phase insulators

[0084] Topological insulators consist of a depletion layer. Topological insulators exhibit the quantum anomalous spin Hall effect and quantum tunneling effect, and have magnetoresistance, which is an antiparticle (spin) property that operates on magnetic energy.

[0085] Referring to Fig. 6, the topological insulator is a spin current generating element with a magnetoresistance value of 0 to Δ. The spin energy momentum composed of up-spin and down-spin decreases in resistance when the spin energy moves in the vertical direction, and when it moves in the horizontal direction, the spin energy decreases while the resistance increases infinitely, and the spin current becomes a surface current.

[0086] Topological insulators eliminate leakage current because spin current flows below the threshold voltage. Since the spin current in topological insulators also acts as surface current, the problem of leakage current does not arise fundamentally.

[0087] As semiconductor devices shrink to the nanometer level, problems such as leakage current, heat generation, and increased power consumption are emerging in memory semiconductors, TSV (through-hole via) technology, and interposer technology. To understand the relationship between energy and capacitors, structural changes in thickness and area alter capacity and energy output.

[0088]

[0089] [Equation 2]

[0090]

[0091] According to mathematical equation 2, as the area increases, the capacitance increases and the resistance increases. Relatively, as the thickness increases, the capacitance decreases and the resistance decreases. However, the topological insulator has magnetoresistance characteristics that have both PTC and NTC characteristics.

[0092] Spin currents generated within topological insulators are magnetoresistive, thus solving the problematic heating phenomenon. Spin currents move in both vertical and horizontal directions. When the spin current acts vertically, it has the effect of thinning the capacitance, while when it acts horizontally, it has the effect of expanding the capacitance area, resulting in broad bandwidth characteristics.

[0093]

[0094] 5. Relationship between resistance and temperature

[0095] The current generated in the semiconductor is induced as follows.

[0096] [Equation 3]

[0097]

[0098]

[0099] If the total current due to electrons (particles) that appear when current flow occurs is 0,

[0100] [Equation 4]

[0101] = 0 =

[0102] 0 =

[0103] It is derived from the equations for electric field and temperature. Here, K B is the Boltzmann constant.

[0104] [Equation 5]

[0105] E X

[0106] [Equation 6]

[0107] E X = - V = - T = -

[0108] The relationship between electric field and temperature is inversely proportional. The energy gap of a silicon semiconductor is 1.12 eV. The temperature corresponding to the energy gap of silicon is 1.27×10 4 It is 0.0259 eV at room temperature of 300 km. If we graph the relationship between temperature and voltage and the threshold voltage, we can see that heat energy is acting below the threshold voltage.

[0109] Below the threshold voltage, the electrons operate on thermal energy, while above the threshold voltage, they operate on kinetic energy, which allows electrons to move. Below the threshold voltage, the electrons cannot move, and this region, where electrons cannot move, is the magnetic energy region where the spin energy moiety operates.

[0110] Referring to Figure 7, the relationship between temperature and voltage can be expressed as the relationship between current and voltage. The relationship between current and voltage is an inverse relationship (NTC) due to thermal energy below the threshold voltage, and is expressed as a proportional relationship (PTC) due to magnetoresistance above the threshold voltage. A topological insulator is one in which the magnetoresistance can have a wide range from 0 to Δ. When the spin moves in the vertical direction, the resistance decreases, generating a supercurrent, and when it moves in the horizontal direction, the resistance increases, gradually decreasing the spin current. It can be seen that the superconducting properties of a topological insulator occur below the threshold voltage.

[0111] 6. Wide bandwidth effect of a phase insulator without threshold voltage

[0112] As ohmic resistance decreases, leakage current increases. As ohmic resistance increases, leakage current decreases, but efficiency decreases. Ohmic resistance cannot escape leakage current. To reduce leakage current, the threshold voltage must be raised, but this increases resistance. One way to raise the threshold voltage while reducing leakage current is to use an insulating material with a low dielectric constant and high resistance, but this does not completely eliminate leakage current. The way to block leakage current is to use magnetoresistance, which has infinite resistance, and this effect is possible with SiOC topological insulators. While conventional semiconductor SiO2 insulating films are insulating films with ohmic resistance characteristics, topological insulators are insulating films with magnetoresistance characteristics. While SiO2 oxide films always have leakage current and thermal resistance, SiOC topological insulators have no leakage current and generate spin current, so there is no heat loss and efficiency is increased, enabling wide-bandwidth voltage control designs.

[0113] Topological insulators are magnetoresistive elements that operate on magnetic energy (magnetic field) that exhibit the quantum anomalous spin Hall effect. As shown in Fig. 3, even if the threshold voltage is set low and the ohmic resistance is small to create high-mobility FINFETs, GAA transistors, DRAM semiconductors, or small-sized semiconductors, leakage current will still flow in ohmic-resistive elements. Topological insulators can guarantee electromagnetic stability because of their infinite magnetoresistive characteristics, so there are no leakage currents or harmonics, and thus no electromagnetic wave problems. In addition, magnetoresistance with infinite resistance has both NTC and PTC, which has the advantage of controlling thermal energy, but ohmic resistance has difficulty controlling heat.

[0114] Referring to Figure 8, the topological insulator SiOC thin film has a PTC characteristic in which the resistance increases as the temperature increases, and thus the current decreases. The fact that the current decreases when the resistance increases is a magnetoresistive characteristic.

[0115] When a transistor is made using a SiOC insulating film, bidirectional transfer characteristics are exhibited and the tunneling phenomenon occurs. The tunneling phenomenon is a superconducting phenomenon in which spin current appears when the resistance becomes 0 when the voltage is 0 in the SiOC insulating film, and it is an NTC characteristic. Due to the superconducting phenomenon of the SiOC topological insulator, spin current appears in which the phase of the current changes, and as the voltage increases, the surface current increases and the bandwidth widens. Due to the spin current and surface current, there is no threshold voltage, and all currents can be controlled by voltage.

[0116]

[0117] 7. Relationship between resistance and temperature

[0118] Resistance differs in its effects due to kinetic energy and its effects due to thermal energy. Ohmic resistance and magnetoresistance are related to electromagnetic fields, while temperature-dependent resistance was proposed by Kelvin and Onnes. Kelvin's relationship between temperature and resistance includes the properties of superconductors, but Onnes' relationship excludes superconductivity. Magnetoresistance refers to the electrical resistance exhibited in topological insulators and is only proven by Kelvin's relationship between temperature and resistance, which includes both PTC and NTC.

[0119] Conductors and insulators, ohmic resistance and magnetoresistance, and current and temperature can be organized as shown in Fig. 9. Magnetoresistance has both NTC (negative temperature coefficient) and PTC (positive temperature coefficient) characteristics, while ohmic resistance only has NTC (negative temperature coefficient) characteristics when resistance increases. Resistance and temperature are inversely proportional, and it shows that supercurrent flows when resistance becomes 0. In the region where resistance and temperature are proportional, resistance increases as temperature increases, making it difficult for supercurrent to flow.

[0120] In all areas, low resistance and high temperature facilitate current flow, so temperature and resistance are inversely proportional. Magnetoresistance also exhibits supercurrent flow as temperature increases while resistance decreases.

[0121] Magnetoresistance is the resistance of the depletion layer, which is the semiconductor interface, and the depletion layer is an insulator. Insulators have magnetoresistance. When magnetoresistance is inversely proportional to temperature, tunneling occurs, and since supercurrent is generated by phase coherence at the point where the resistance is the lowest (0), capacitance decreases. If the surface area of ​​the depletion layer is large, the resistance increases, and as the capacitance increases, a repulsive force acts. When the capacitance is small and the resistance becomes zero, an attractive force acts, causing supercurrent to flow and the temperature to rise. Topological insulators have high resistance, but when the voltage becomes zero, spin current is generated, and a phase transition occurs, leading to tunneling. Tunneling creates supercurrent, and when the voltage is gradually increased, the supercurrent energizes electrons and moves them, causing current to flow in the direction of low resistance.

[0122] In conclusion, topological insulators have infinite resistance, and there are two ways in which current can be generated: supercurrent and normal current. Supercurrent has small capacitance, so it behaves like an ohmic resistor, while normal current has large capacitance, so it behaves like a magnetoresistance. In a topological insulator with infinite resistance, electrons cannot move. If electrons cannot move, spin current is generated by quantum fluctuations, and supercurrent is generated through quantum tunneling due to quantum superposition. As the surface area increases due to quantum entanglement, capacitance increases, and normal charge current due to electron flow flows.

[0123]

[0124] 8. Electrical characteristics of magnetoresistance and conditions for generating supercurrent

[0125] Referring to Fig. 9, in the current-voltage curve, the (+) current is the ohmic resistance region, and the (-) current is the magnetoresistance region. On the current-voltage coordinate, as the temperature increases from the absolute zero temperature, the magnetoresistance decreases, and the ohmic resistance also decreases as the temperature increases. According to the current, it is divided into a conductor that operates in the (+) current and an insulator that operates in the (-) current. If there is a threshold voltage, it is a conductor, and if there is no threshold voltage, it is an insulator. A topological insulator has no threshold voltage, but spin current flows. A topological insulator has magnetoresistance characteristics that have both NTC and PTC.

[0126] Resistance, voltage, and capacitance are proportional, and greater resistance leads to greater energy. It can be seen that a topological insulator with infinite resistance possesses infinite energy. The magnetoresistance characteristic of PTC (Pulse-Tracking) has a large energy content, resulting in a wide bandwidth and free current control by voltage. The NTC characteristic generates a supercurrent when the temperature rises.

[0127]

[0128] 9. Topological insulators and the Dirac equation

[0129] According to the Maxwell-Boltzmann equation in mathematical equation 7 below,

[0130] [Equation 7]

[0131] EE f 》> In case of kT,

[0132] f F (E)

[0133] In this case, it can be expressed as a Dirac equation as in mathematical equation 7.

[0134] [Equation 8]

[0135]

[0136] The graph following the Dirac equation of mathematical equation 8 shown in Fig. 10 expresses the probability of electrons existing from absolute temperature 0 K (-273℃) to room temperature. When a topological insulator is used, an electric signal satisfying the Dirac equation appears at room temperature. The smaller the external voltage, the better the tunneling phenomenon occurs, and the tunneling current can be measured without cooling the temperature. These are the electrical characteristics of a room-temperature superconductor.

[0137] Dirac's equation appears in the topological insulator transistor, and it exhibits a bidirectional transfer characteristic in which (+) current flows at (-) voltage and (-) current flows at (+) voltage no matter how much the drain voltage increases. Figure 11 shows the NTC (negative temperature coefficient) characteristic in which more current flows as the drain voltage and gate voltage are lower. This topological insulator characteristic that enables wide-bandwidth voltage control without electrical leakage current, which can block leakage current and prevent heat generation, is suitable for display video, HBM, interposer, and hybrid wiring process.

[0138]

[0139] 10. Magnetic Energy: Spin Current Characteristics of Topological Insulators

[0140] A topological insulator (TI) device was fabricated by depositing a SiOC topological insulator on a silicon substrate and forming a two-terminal electrode. As shown in Table 1, a digital power supply was used to fix the power consumption to 0.1 W and the current and voltage were measured.

[0141]

[0142] Ti element resistance (Ω) current (A) voltage (V) J44K0.0345.11K1K0.01712.38L06K0.01512.89L16K0.01512.37M13680.0238.65M21380.0238.39M31680.0247.88M41690.0238 .5N17830.01510.99N25140.01611.59N35710.01910.23N46.8K0.01810.6 6013.1K0.01611.79023.9K0.01611.58031.7K0.01611.98043K0.01710.76

[0143]

[0144] Referring to Fig. 12, this is a graph obtained by measuring the voltage and current of a phase insulator and calculating the power consumption. Fig. 12(a) shows the voltage and current, and Fig. 12(b) and Fig. 12(c) show the power consumption. The power consumption shows a symmetrical shape depending on the current and voltage. There is a region where the power consumption increases and then decreases depending on the voltage and current, and in the resistor of Fig. 12(a), the current and voltage of the resistor change rapidly at a location where the resistance slope does not exist. There were two locations where the resistance increased and the resistance slope decreased. The phase changed at the location where the resistance increased.

[0145] Referring to Figure 13, Figures 13(a) and 13(b) show power consumption and resistance in relation to voltage and current. Figure 13(a) shows that power consumption decreases rapidly as resistance increases while voltage decreases. Figure 13(b) shows that power consumption decreases rapidly as resistance increases as current increases. In general, power consumption decreases as resistance increases.

[0146] Figure 14 is a graph showing resistance and power consumption. Figure 14(a) shows resistance for voltage change, Figure 14(b) shows power consumption for voltage change, Figure 14(c) shows resistance for current change, and Figure 14(d) shows resistance for current change.

[0147] Referring to Fig. 14, Fig. 14 organizes current and voltage according to resistance. In order to represent the resistance from low to high values, the graphs of current and power were converted to bilateral symmetry, as in Fig. 14(a) and Fig. 14(b). Since voltage and current have energy symmetry, the graphs of voltage and power were converted to vertical symmetry, as in Fig. 14(c) and Fig. 14(d). As the resistance increased, the phase of the current and voltage changed.

[0148] The phenomenon that the smaller the voltage, the larger the current was observed in the region of high resistance. The voltage with charge symmetry is the Dirac fermion spin current, and the current with parity symmetry is the Weyl fermion spin current. The two spin currents were separated in Majorana fermions. Since the spin current with small resistance is Majorana fermion, it can be seen that the resistance of Dirac fermions and Weyl fermions is the large spin current. In Fig. 14(c) and Fig. 14(d), the topological insulator has two sections where the current phase changes, and the current changes rapidly in the region where the resistance decreases and then increases. The current increased even though the voltage was low and the resistance was large. The reason for the current increase is the large resistance. These results mean that magnetoresistance is magnetic energy. The phenomenon of large resistance but increasing current is the magnetoresistance characteristic. The topological insulator exhibits a small voltage change of 13 V to 7.5 V and a current of 0.014 A to 0.024 A, but the change in resistance is large, indicating that spin current is generated. The phase changes according to the change in resistance.

[0149] Referring to Fig. 15, the spin current is sensitive to changes in resistance, and its phase also changes depending on the current and voltage. The current has parity symmetry, and the voltage has charge symmetry. Fig. 15 shows the supersymmetry of the spin current according to parity symmetry and charge symmetry. The spin current is composed of two components: Dirac fermions and Weyl fermions. Dirac fermions are a component with charge symmetry, and Weyl fermions are a spin current with parity symmetry.

[0150] In low-resistance regions, rapidly changing spin currents are Majorana fermions. Spin currents operate as Majorana fermions split into two components: Dirac fermions and Weyl fermions. Weyl fermions transform into kinetic energy, while Dirac fermions transform into thermal energy, so the total energy remains constant.

[0151] As resistance changes, energy flows, moving from areas of high resistance to areas of low resistance. As resistance decreases, the phase shifts, increasing resistance and generating its own magnetic energy.

[0152] Since the voltage phase changes before the current phase, we can see that charge symmetry occurs before parity symmetry. This result proves that when comparing the speeds of down-spin Dirac fermions and up-spin Weyl fermions, down-spin occurs first. In addition, we can see that the reason spin undergoes a phase change is because it functions to conserve magnetic energy by increasing resistance, and in order to conserve magnetic energy, it functions to increase the resistance by changing the phase of the thermal energy obtained from the surface current of Weyl fermions.

[0153]

[0154] 11. Current amplification characteristics of channel layer topological insulators

[0155] If a channel layer is formed in a phase insulator transistor, the current can be amplified, and when the drain voltage increases in a wide range from 0.0001 V to 40 V, the resistance decreases, and an electrical signal in which the current is amplified can be obtained. As shown in Fig. 16, the channel layer phase insulator exhibits a PTC (positive temperature coefficient) characteristic in which the current is amplified as the drain voltage increases, increasing from (-) current to (+) current. Since the phase insulator is used as a gate insulator, V is used as a threshold voltage.GS Stability is guaranteed because the voltage does not exceed 0 V, so V DS As the voltage increases, the current also increases, and the mobility increases steadily accordingly.

[0156]

[0157] 12. Operating Principle of Grounding Device

[0158] Topological insulators exhibit a resistance value where the resistance is infinite. Materials with high resistance are insulators, and the best insulating material based on the dielectric constant is vacuum (ε r = 1.0). Topological insulators have a dielectric constant smaller than 1.0 of vacuum. Topological insulators exhibit negative resistance (magnetoresistance) characteristics. That is, topological insulators are not related to leakage current, which is electric energy, and operate on magnetic energy, so they respond to the Earth's magnetic field. Therefore, topological insulators are suitable for use as grounding elements.

[0159] As shown in Figure 17, a topological insulator (TI) is installed by inserting it into the auxiliary protective equipotential bonding conductor and the grounding conductor in a series or parallel connection.

[0160] The leakage current captured in the ground wire transforms into spin current within the phase insulator and disappears. The phase insulator is connected to the ground wire, and by connecting the relatively high-resistance phase insulator to the relatively low-resistance ground, the magnetic field stability is enhanced, while also eliminating surrounding leakage current.

[0161] In this way, it is necessary to install phase insulators and grounding wires to eliminate leakage current and electromagnetic waves from transmission lines installed inside buildings and ensure safety.

[0162] When electrons move, current flows. When an electric field is generated in the direction of current flow, a magnetic field is also generated, resulting in leakage current. One way to eliminate leakage current in transmission lines is to pass the ground wire through a phase insulator.

[0163]

[0164] 13. Application principles of TSV technology, hybrid bonding, and interposer technology

[0165] The back end of line (BEOL) involves the packaging steps that connect semiconductor chips to the outside world. This step involves forming an appropriate package that protects the chip and enables connection to other devices. Interposers connect microscopic circuits, serving as communication devices that exchange information and are essential components in semiconductor technology, determining performance and efficiency.

[0166] HBM refers to the compact storage of memory, but this leads to poor heat dissipation between chips, signal interference, and reduced efficiency. Therefore, TSV technology is being applied to interposers, along with HBM (high bandwidth memory), to build AI data centers.

[0167] Packaging technologies can be summarized as interposer and through silicon via (TSV) technologies. Substrate technologies that can be used as interposers are becoming increasingly important, and TSV technology is gaining importance as a method for designing shorter wiring lengths. Interposer and TSV technologies are closely related to insulating layer technology, and methods for controlling magnetoresistance, magnetic energy, and thermal energy are crucial.

[0168] As illustrated in Figure 18, HBM (high bandwidth memory) technology requires electrical connections between die layers. By stacking memories using the TSV process, faster data processing speeds, lower power consumption, and improved efficiency are achieved. Thus, the TSV process has become essential for creating high-performance memory.

[0169] In addition, according to the spin current generating device according to one embodiment of the present invention, since the SiOC insulating film is a topological insulator, when used as an insulating film between a via hole and a metal wiring in a TSV process, it has a leakage current blocking effect.

[0170] In addition, according to the spin current generating device according to one embodiment of the present invention, since the SiOC insulating film is a topological insulator, when used as a topological insulator thin film connecting metal wiring and metal wiring in a hybrid bonding process of stacking semiconductor layers, there is an effect of blocking leakage current due to spin current.

[0171] In addition, according to the spin current generating device according to one embodiment of the present invention, the SiOC insulating film is a topological insulator, so when used as an interlayer insulating film in the HBM process, it has a leakage current blocking effect.

[0172] The interposer (600) must have low power consumption, be able to block leakage current, and be grounded. To address these three requirements simultaneously, it is desirable to use a room-temperature superconducting topological insulator, as this type of topological insulator allows spin current to flow, not leakage current.

[0173] Referring to FIGS. 19 and 20, in order to eliminate the heat generation phenomenon of the interposer (600), an upper collection wiring (801) is placed at the bottom of the interposer (600), and the collected thermal noise is transmitted through the lower collection wiring (802) on the substrate (700) installed at the same location as the collection wiring (801), and is converted into a spin current by connecting to a spin current generating device (500) using a phase insulator to eliminate the thermal noise. At this time, an AC power source can be applied.

[0174] Referring to Fig. 21, the captured thermal noise and leakage current are transmitted to the capture wiring (802) and removed by spin current generation through the spin current generation device (500) using a phase insulator, and the power can be operated with a direct current circuit design.

[0175] A spin current generation device (500) using a phase insulator may include a heat sink, and more specifically, when the capacity of the load stage is large, a heat sink may be added to the spin current generation device (500) using a phase insulator.

[0176] As illustrated in Fig. 21, a spin current generation device (500) using a phase insulator can be placed and protected to eliminate thermal noise and leakage current of the interposer (600). At this time, the spin current generation device (500) uses a SiOC phase insulator as the phase insulator, and the interposer (600) can use a silicon substrate or a glass substrate as the substrate (601).

[0177] In addition, according to the spin current generating device according to one embodiment of the present invention, the spin current generating device (500) is connected to the lower end of the interposer (600) through a thermal noise and leakage current collecting wiring (801), so that leakage current can be removed by spin current. At this time, leakage current and thermal noise components are collected through a collecting wiring (802) installed on the substrate at the same position as the collecting wiring (801) installed at the lower end of the interposer (600), transferred to the general wiring (900), and then transferred to the spin current generating device (500), so that leakage current can be removed by the spin current of the spin current generating device (500).

[0178] Since the heat generation phenomenon of the interposer (600) is a phenomenon that occurs when the resistance decreases and the kinetic energy of the particles increases, the heat generated in the interposer can be reduced by using a spin current generating device (500) that uses a topological insulator that has infinite resistance and generates spin current.

[0179]

[0180] 14. Metal wiring process

[0181] Since spin current flows in the topological insulator SiOC thin film, if the SiOC thin film (200) is deposited on an ITO glass substrate (700) and the electrode wiring is used as a transparent electrode, it can be used as a transparent electrode.

[0182] When a metal wiring (801, 801) is placed on a SiOC / Si substrate (200), a spin current flows in the SiOC layer (501), so a general (particle) current flows along the metal wiring placed thereon, but leakage current disappears.

[0183]

[0184] Figures 22 to 29 are drawings for explaining a spin current generation device (500) using a phase insulator according to the present invention.

[0185] Hereinafter, a spin current generation device (500) using a phase insulator according to an embodiment of the present invention will be described with reference to FIGS. 22 to 29.

[0186] Referring to FIG. 22, a spin current generating device (500) using a phase insulator according to an embodiment of the present invention may be configured to include a substrate (100), an insulating film (200) disposed on the substrate (100), a source electrode (301) disposed on the insulating film (200), a drain electrode (302) disposed on the insulating film (200), and a gate electrode (303) disposed on the substrate (100).

[0187] At this time, the insulating film (200) is made of SiOC, and can be configured with an infinite resistance and a dielectric constant of 1.0 or less. The SiOC insulating film is configured with an amorphous structure to have a structure similar to a depletion layer or a vacuum state (εr=1.0).

[0188] Referring to FIG. 23, a spin current generating device (500) using a phase insulator according to another embodiment of the present invention includes a substrate (100), an insulating film (200) disposed on the substrate (100), a source electrode (401) disposed on the insulating film (200), and a drain electrode (302) disposed on the insulating film (200), and is configured such that the substrate (100) operates as a gate electrode.

[0189] In the embodiments of FIGS. 22 and 23, when the voltage applied to the gate electrode (303) is a negative (-) bias, a (+) current flows, and when the voltage applied to the gate electrode is a positive (+) bias, a (-) current flows, operating as a spin current, and a tunneling phenomenon occurs. As the voltage of the drain electrode (402) decreases, the spin current increases, and the tunneling phenomenon occurs more easily.

[0190] In addition, when the voltage applied to the gate electrode (303) is 0, the resistance of the gate electrode (303) becomes 0, and a supercurrent is generated by quantum superposition in which (+) current and (-) current are generated simultaneously.

[0191] In addition, when the voltage applied to the gate electrode (303) is 0, the resistance of the gate electrode (303) becomes 0, so that quantum fluctuations and spin current occur, and the voltage and resistance are inversely proportional, and the temperature and resistance are inversely proportional, and when the voltage applied to the gate electrode (303) increases, quantum entanglement occurs, so that the resistance increases, and the spin current becomes a surface current, so that the voltage and resistance are proportional, and the temperature and resistance are proportional.

[0192] Through the configuration of the insulating film (200) as described above, the resistance changes from 0 to infinity depending on the applied voltage, generating a spin current, and the generation of the spin current eliminates leakage current. In addition, the insulating film (200) can operate as an NTC (negative temperature controller).

[0193] Meanwhile, the SiOC insulating film (200) must have a carbon content of 0.5% or less in order to generate spin current, and the SiOC thin film must be deposited on an N-type silicon substrate.

[0194] In addition, SiOC topological insulators can generate spin current due to their magnetoresistive characteristics, where the resistance varies from 0 to Δ, and since magnetic energy appears, thermal energy can also be controlled. When the resistance becomes 0, tunneling occurs, and when the resistance is high, the temperature increases, which reduces the charge current. In order to increase the surface current, the heat dissipation effect can be increased as the thickness of the SiOC film becomes thinner.

[0195] Flicker phenomenon is a phenomenon that flickers because the current becomes 0 when the voltage becomes 0, but spin current does not cause flicker because the current never becomes 0 even when the voltage is 0, and it has a wide bandwidth characteristic because there is no threshold voltage.

[0196] In addition, according to the phase insulator transistor according to the present invention, since the spin current does not become 0 even when the voltage becomes 0, it can be used as an AI artificial intelligence bitNET element that can represent information in three states of -1, 0, and 1.

[0197] In the embodiments of FIGS. 24 and 25, when the source electrode (301) and the drain electrode (302) are placed on the insulating film (200), they may be placed so as to cover a wide area of ​​the insulating film (200). In addition, electrode wiring (401, 402) may be formed on the source electrode (301) and the drain electrode (302).

[0198] In this way, the wider the area of ​​the electrode wiring (401, 402) connected to the outside, the more spin current (current between the source and drain) can be induced, and the spin current proportional to the wide electrode is converted into a charge current.

[0199] At this time, as shown in FIGS. 24 and 25, the insulating film (200) may be formed in a pattern shape in an area corresponding to the source electrode (301) and the drain electrode (302). At this time, the electrode wiring (401, 402) may be configured to include a main portion that covers the source electrode (301) and the drain electrode (302) and an extension portion that extends from the main portion.

[0200] At this time, as shown in Fig. 24, when the capacity of the load section is large, a heat sink (1300) may be further included on the back surface of the substrate (100) to ensure effective heat dissipation.

[0201] Referring to FIGS. 26 and 27, a spin current generating device (500) using a phase insulator according to one embodiment of the present invention operates as a passive element (T) in an AC and DC circuit, and when spin current is generated, the heat generation phenomenon of the load end can be reduced and leakage current can be eliminated.

[0202] FIG. 28 shows a spin current generating device (500) using a topological insulator according to another embodiment of the present invention, which comprises a substrate (100), an insulating film (200) disposed on the substrate (100), a source electrode (301) disposed on the insulating film (200), a drain electrode (302) disposed on the insulating film (200), a gate electrode (303) disposed on the substrate (100), a source wiring (401) disposed on the source electrode (301), and a drain wiring (402) disposed on the drain electrode (302), and the drain electrode (301), the source electrode (302), the drain wiring (401), and the source wiring (402) are formed in a plate type.

[0203] At this time, the embodiment of Fig. 28 further comprises a fixed substrate (1400) formed on the back surface of the substrate (100) and on the source wiring (401) and the drain wiring (402), respectively. The fixed substrate (1400) is a substrate for fixing a spin storage element and may be made of glass or heat-resistant reinforced plastic.

[0204] In addition, FIG. 29 illustrates a spin current generation device (500) using a phase insulator according to another embodiment of the present invention, and the spin current generation device (500) using a phase insulator according to the embodiment of FIG. 28 is configured to include an inner case (1700), an outer case (1800), a source extension wiring (403), and a drain wiring (404).

[0205] The inner case (1700) accommodates and fixes the fixed substrate (1400), and the outer case (1800) accommodates the inner case (1700).

[0206] At this time, the inner case (1700) is a case for fixing general wiring, and the outer case (1800) is a case that constitutes the exterior of a spin current generating device that absorbs leakage current.

[0207] In addition, the source extension wiring (403) is formed in a plate type on the upper surface of the outer case (1800) so as to extend from the source wiring (401), and the drain extension wiring (404) is formed in a plate type on the upper surface of the outer case (1800) so as to extend from the drain wiring (402).

[0208] At this time, the source wiring (401), the drain wiring (402), the source extension wiring (403) and the drain wiring (404) are made of metal materials, such as Cu, Al, Ag, Au, or zinc-plated Cu or tin-plated Cu.

[0209] In this way, since the spin current generated from thermal energy has the characteristic of decreasing resistance as the temperature increases, when heat is generated in an electric vehicle battery or an electrical system where high voltage flows, such as a data center, when the spin current generator according to the present invention is contacted, the resistance decreases and spin current is generated, so that the heat generation phenomenon can also be reduced. At this time, by contacting the topological insulator according to the present invention to the flat part where heat is generated, the leakage current can be blocked and converted into a spin current.

[0210] In addition, referring to FIG. 30, a spin current generating device (500) using a phase insulator according to an embodiment of the present invention may be configured to include a substrate (100), an insulating film (200) disposed on the substrate (100), a source electrode (401) disposed on the insulating film (200), a drain electrode (302) disposed on the insulating film (200), and a gate electrode (303) disposed on the substrate (100), and at this time, a plurality of spin electrodes (304) are further configured.

[0211] The above plurality of spin electrodes (304) are arranged in a row in the space between the source electrode (301) and the drain electrode (302) on the insulating film (200).

[0212] In addition, referring to FIG. 31, a spin current generating device (500) using a phase insulator according to another embodiment of the present invention includes a substrate (100), an insulating film (200) disposed on the substrate (100), a source electrode (301) disposed on the insulating film (200), and a drain electrode (302) disposed on the insulating film (200), and is configured such that the substrate (100) operates as a gate electrode, and at this time, is configured to further include a plurality of spin electrodes (304).

[0213] The above plurality of spin electrodes (304) are arranged in a row in the space between the source electrode (401) and the drain electrode (302) on the insulating film (200).

[0214] FIGS. 32 to 34 are drawings for explaining the results of removing noise components by a spin current generating device using a phase insulator transistor according to an embodiment of the present invention.

[0215] Referring to (a) of FIG. 32 and (a) of FIG. 33, the screen was not clear due to leakage current and noise components in the TV or monitor, but referring to (b) of FIG. 32 and (b) of FIG. 33, it can be seen that when the phase insulator according to the present invention is connected to the AC power of the TV or monitor, the leakage current and noise components are removed, resulting in a clear screen.

[0216] Furthermore, according to the present invention, since the input current does not contain spin current and the output current contains spin current, energy efficiency increases and power consumption decreases. Power consumption is reduced because leakage current is converted into spin current.

[0217] Referring to Figure 34, it can be seen that when a phase insulator according to the present invention is connected to the AC power of a speaker / audio system, leakage current and noise components are eliminated, resulting in a clean sound output.

[0218] FIG. 35 illustrates a two-terminal notation method when a spin current generating device using a phase insulator according to one embodiment of the present invention is used as a magnetoresistive element, and when three terminals are applied, it functions as a tunneling transistor.

[0219] FIG. 36 is a drawing for explaining the current amplification effect of a spin current generating device using a phase insulator according to an embodiment of the present invention. A current amplification effect is exhibited at the output terminal of a spin current generating device using a phase insulator according to an embodiment of the present invention because a spin current generated from the phase insulator is added.

[0220] Spin current has an amplification effect even without resistance, and when it passes through a bridge diode to create a direct current, the size changes by the size of the spin current when the (-) signal changes to a (+) signal, so even without capacitance, the voltage does not become 0, so flickering or noise does not appear.

[0221] In this way, since the phase difference between the charge voltage and charge current is not generated by the spin current, leakage current does not occur. In other words, the superposition (quantum entanglement) of the spin current fundamentally blocks the generation of leakage current.

[0222] FIG. 37 is a diagram illustrating a Qubit and bitNet element using a spin current generating device using a topological insulator according to an embodiment of the present invention.

[0223] The spin current generating device using a topological insulator according to the present invention is a passive element (T), and since no leakage current is generated, there is no noise and no electromagnetic waves are generated, and since it has NTC and PTC characteristics, it can control temperature, has a surge function, has a leakage current blocking function, and can be used as a Qubit or bitNet in a quantum computer.

[0224] That is, if a transistor structure that operates on direct current is created as in the present invention, the voltage can be controlled using the gate terminal. Since the spin current can be controlled by the voltage of the gate electrode, it can operate as a Qubit device or a bitNet device by controlling the current flowing between the source electrode and the drain electrode. Since the leakage current is fundamentally blocked by the superposition (quantum entanglement) of the spin current, it is possible to process a fine current signal at the nanocurrent (nA) level, so it can operate as a quantum device.

[0225] The detailed description of the present invention, as described above, has described specific embodiments. However, various modifications are possible without departing from the scope of the present invention. The technical spirit of the present invention should not be limited to the aforementioned embodiments, but should be defined not only by the claims but also by equivalents thereof.

Claims

1. In a spin current generating device using a topological insulator, substrate (100); An insulating film (200) disposed on the above substrate (100); A source electrode (301) placed on the above insulating film (200); A drain electrode (302) disposed on the insulating film (200); and It includes a gate electrode (403) placed on the above substrate (100); A spin current generating device using a phase insulator, characterized in that the above insulating film (200) is made of a SiOC phase insulator.

2. In a spin current generation device using a phase insulator, substrate (100); An insulating film (200) disposed on the above substrate (100); A source electrode (301) placed on the insulating film (200); and It includes a drain electrode (302) placed on the insulating film (200); The above substrate (100) acts as a gate electrode, A spin current generating device using a phase insulator, characterized in that the above insulating film (200) is made of a SiOC phase insulator.

3. In claim 1, A source wiring (401) arranged on the source electrode (301); and A spin current generating device using a phase insulator, characterized in that it further includes a drain wiring (402) arranged on the drain electrode (302).

4. In claim 3, A spin current generating device using a phase insulator, characterized in that the drain electrode (301), the source electrode (302), the drain wiring (402), and the source wiring (401) are formed in a plate type.

5. In claim 4, A heat sink (1300) formed on the back surface of the above substrate (100); A spin current generating device using a topological insulator characterized by further including:

6. In claim 4, A fixed substrate (1400) formed on the back surface of the substrate (100) and on the source wiring (401) and the drain wiring (402), respectively; A spin current generating device using a topological insulator characterized by further including:

7. In claim 6, An internal case (1700) that accommodates and fixes the above fixed substrate (1400); An outer case (1800) accommodating the inner case (1700); A source extension wiring (403) that extends from the source wiring (401) and is formed in a plate type on the upper surface of the outer case (1800); and A drain extension wire (404) formed in a plate type on the upper surface of the outer case (1800) and connected to extend from the drain wire (402); A spin current generating device using a topological insulator characterized by further including:

8. In claim 1 or claim 2, A spin current generating device using a topological insulator, characterized in that when the voltage applied to the gate electrode (303) is a negative (-) bias, a (+) current flows, and when the voltage applied to the gate electrode is a positive (+) bias, a (-) current flows, thereby causing a tunneling phenomenon.

9. In claim 1 or claim 2, A spin current generating device using a topological insulator, characterized in that the lower the voltage of the drain electrode (302), the more the spin current increases, making it easier for the tunneling phenomenon to occur.

10. In claim 1 or claim 2, The above gate electrode (303) is A spin current generating device using a topological insulator, characterized in that when the voltage applied to the gate electrode (303) is 0, the resistance of the gate electrode (303) becomes 0, and a supercurrent is generated by quantum superposition in which (+) current and (-) current are generated simultaneously.

11. In claim 1 or claim 2, The above insulating film (200) is A spin current generator using a topological insulator characterized by operating as a magnetoresistance and an NTC (negative temperature controller).

12. In claim 1 or claim 2, On the insulating film (200), a plurality of spin electrodes (304) arranged in a row in the space between the source electrode (301) and the drain electrode (302); A spin current generating device using a topological insulator characterized by further including:

13. In claim 1 or claim 2, The above spin current generating device is, By connecting the interposer and the capture wiring placed on a large-area substrate, the leakage current of the interposer is blocked, The above interposer, A spin current generating device using a phase insulator, characterized in that it is arranged on a large-area substrate made of silicon or a glass plate, and is configured to include a TSV (Through Silicon Via) formed on the silicon layer and a SiOC thin film formed on the surface of the TSV (Through Silicon Via) inside the silicon layer, and is connected to the phase insulator transistor and the SiOC layer through the trapping wiring, thereby blocking leakage current of a semiconductor arranged on the interposer.

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