Microwave heat treatment apparatus using dielectric material

Abstract

The present invention relates to a microwave heat treatment apparatus using a dielectric material in which different types of dielectric materials having different dielectric constants are formed inside a waveguide, and microwaves can be transmitted into a treatment chamber via the different types of dielectric materials to uniformly heat a target material. The microwave heat treatment apparatus comprises: a treatment chamber having a constant space therein; a microwave generator that is installed outside the treatment chamber and generates microwaves; and a waveguide that has one end connected to the microwave generator and the other end inserted into the treatment chamber, has at least one slot formed on one surface of the portion inserted into the treatment chamber, includes a plurality of dielectric materials having different dielectric constants in the inner space, and transmits the microwaves generated by the microwave generator into the treatment chamber via the plurality of dielectric materials to heat a target material disposed in the treatment chamber.

Description

Microwave heat treatment device using dielectric material

[0001] [Cross-reference to related applications]

[0002] This application claims priority to Republic of Korea Patent Application No. 10-2024-0056285, filed April 26, 2024, the entire contents of which are incorporated herein by reference.

[0003] The present invention relates to a microwave heat treatment device using a dielectric material, and more particularly, to a microwave heat treatment device using a dielectric material that forms heterogeneous dielectric materials having different dielectric constants inside a waveguide when heating a target material using microwaves, and transmits microwaves into a processing chamber through the heterogeneous dielectrics to uniformly heat the target material.

[0004] After microwave ovens were commercialized, which use the microwave heating principle of heating dielectrics by generating heat through molecular motion and ion conduction by the action of electromagnetic waves of 300 MHz to 300 GHz, their application for industrial purposes was studied, and microwave heat treatment devices are currently being utilized in various fields.

[0005] The industrial fields in which it is used include vulcanization, drying, sterilization / insecticide, bonding, crosslinking, curing, reaction promotion, degreasing, firing, and annealing.

[0006] Materials that are heated include rubber, food, wood, chemicals, ceramics, and semiconductor substrates.

[0007] The existing heating method using a heat medium such as hot air or hot water increases the temperature by transferring the heat energy obtained from the atoms of the heat medium that come into contact with the surface constituent atoms of the target material to the interior of the material through heat conduction to nearby atoms.

[0008] These reactions occur when the substance is a fluid and its density changes with temperature, resulting in heat transfer by convection.

[0009] Infrared rays and microwaves, which do not use a heat medium, are radiated as electromagnetic waves and reach the surface of a material at the speed of light. Since the depth of penetration into the material is inversely proportional to the frequency, there is a difference in that infrared rays are absorbed by the atoms on the surface and converted into heat energy, while microwaves penetrate into the material and are converted into heat energy within the material's constituent molecules.

[0010] Therefore, when heating industrial target materials with 3D structures, microwaves have the advantage of being able to heat evenly throughout the interior compared to other heating methods.

[0011] Meanwhile, the annealing process during the semiconductor manufacturing process is used to rearrange amorphous materials, remove defects in crystalline materials, and remove and recrystallize defects in dopants in amorphous or crystalline materials.

[0012] These heat treatment processes include furnace processes, rapid thermal processes (RTP), flash heat treatment processes, and laser heat treatment processes.

[0013] However, the furnace process uniformly performs the heat treatment process at high temperatures of 800℃ to 1100℃, and there is a problem that the uniform heat treatment process within the semiconductor device, which contains a mixture of various materials with different temperature characteristics, lowers the overall yield and performance of the semiconductor device.

[0014] The rapid heat treatment process, like the furnace process, has the problem of deteriorating the performance of semiconductor materials and causing unwanted dopant diffusion into surrounding materials because the heat treatment process is performed at high temperatures of 800°C to 1100°C.

[0015] In addition, the flash heat treatment process and the laser heat treatment process have the inconvenience of having to perform the heat treatment process multiple times while moving each time to cover the entire doped area because the boundary of the impurity region moves during the heat treatment process, and the area within the laser spot size of several millimeters in diameter is activated, but it is much smaller than the entire area required for activation on the wafer surface, and the uniformity of the heat treatment in the depth direction is not secured, which limits reproducibility and mass production. As a result, there is a problem that a pattern effect occurs in which areas overlap or are missing when a pattern is formed, resulting in a decrease in productivity due to the pattern effect.

[0016] To solve these problems, heat treatment processes are conventionally performed using microwaves.

[0017] This microwave-assisted heat treatment process can improve the performance of semiconductor devices due to its low processing temperature, minimize unwanted diffusion, and can be used in semiconductor processes such as heat treatment of dielectric materials containing metals (e.g., Al, Ni, etc.) that could not be used in heat treatment processes above 800°C.

[0018] In addition, the heat treatment process using microwaves has the advantage of not only a change in the state of the material due to an increase in the thermal temperature of the sample, but also a process effect due to a non-thermal effect caused by the kinetic energy of the sample atoms affected by the microwaves.

[0019] As described above, when performing a heat treatment process using microwaves, it is necessary to uniformly heat the target material by uniformly irradiating microwaves to the target material.

[0020] The present invention has been devised to solve the conventional problems as described above, and the purpose of the present invention is to provide a microwave heat treatment device using a dielectric material that forms heterogeneous dielectric materials having different dielectric constants inside a waveguide and transmits microwaves into a treatment chamber through the heterogeneous dielectric materials to uniformly heat a target material.

[0021] In order to achieve the above-described object, a microwave heat treatment device using a dielectric material according to the present invention comprises: a treatment chamber having a predetermined space inside; a microwave generator installed outside the treatment chamber to generate microwaves; and a waveguide having one end connected to the microwave generator, the other end inserted inside the treatment chamber, at least one slot formed on one surface of a portion inserted inside the treatment chamber, and containing a plurality of dielectric materials having different dielectric constants in the internal space, wherein the waveguide transmits microwaves generated by the microwave generator into the treatment chamber through the plurality of dielectric materials to heat a target material placed in the treatment chamber.

[0022] In addition, in a microwave heat treatment device using a dielectric material according to the present invention, the plurality of dielectric materials are characterized in that they are arranged continuously along the longitudinal direction of the waveguide.

[0023] In addition, in a microwave heat treatment device using a dielectric material according to the present invention, the plurality of dielectric materials are characterized in that they are sequentially arranged along the longitudinal direction of the waveguide in order of a large dielectric constant.

[0024] In addition, in a microwave heat treatment device using a dielectric material according to the present invention, when the plurality of dielectric materials are continuously arranged along the longitudinal direction of the waveguide, a dielectric material having the largest dielectric constant among the plurality of dielectric materials is formed at the bottom of a section in which at least one slot is formed.

[0025] In addition, in a microwave heat treatment device using a dielectric material according to the present invention, a dielectric material is formed in at least one slot to form a dielectric load, and the dielectric load is formed of the same dielectric material as the dielectric material formed in the lower portion of the section in which the at least one slot is formed.

[0026] In addition, in a microwave heat treatment device using a dielectric material according to the present invention, the plurality of dielectric materials are characterized in that they are stacked along the transverse direction of the waveguide.

[0027] In addition, in a microwave heat treatment device using a dielectric material according to the present invention, the plurality of dielectric materials are sequentially stacked along the transverse direction of the waveguide so that a dielectric material having a large dielectric constant is positioned on top.

[0028] In addition, in a microwave heat treatment device using a dielectric material according to the present invention, when the plurality of dielectric materials are laminated along the transverse direction of the waveguide, the dielectric material laminated on top is formed to be larger than a section in which at least one slot is formed.

[0029] In addition, in a microwave heat treatment device using a dielectric material according to the present invention, when the plurality of dielectric materials are laminated along the transverse direction of the waveguide, the dielectric material laminated at the bottom is formed to surround all of the remaining dielectric materials laminated thereon.

[0030] Specific details of other embodiments are included in the “Specific Details for Carrying Out the Invention” and the attached “Drawings.”

[0031] The advantages and / or features of the present invention and the methods for achieving them will become clear with reference to the various embodiments described in detail below together with the accompanying drawings.

[0032] However, the present invention is not limited to the configuration of each embodiment disclosed below, but may be implemented in various different forms, and each embodiment disclosed in this specification is provided only to ensure that the disclosure of the present invention is complete and to fully inform a person having ordinary skill in the art to which the present invention pertains of the scope of the present invention, and it should be understood that the present invention is defined only by the scope of each claim of the claims.

[0033] According to the present invention, heterogeneous dielectric materials having different dielectric constants are formed inside a waveguide, and microwaves are transmitted into a processing chamber through the heterogeneous dielectric materials, so that a position at which a target material is heated through a slot can be arbitrarily controlled, and the spacing between slots formed on one side of the waveguide can be formed closely, thereby enabling the target material to be heated uniformly.

[0034] FIG. 1 is a schematic diagram showing the configuration of a microwave heat treatment device using a dielectric material according to one embodiment of the present invention.

[0035] FIG. 2 is a drawing exemplarily showing the shape of a slot formed in a waveguide according to the present invention.

[0036] FIG. 3 is a drawing exemplarily showing the arrangement of slots formed in a waveguide according to the present invention.

[0037] Figure 4 is a drawing showing an example of the spacing between slots formed in a waveguide when the internal space of the waveguide is empty.

[0038] Figure 5 is a drawing showing an example of the spacing of slots formed in a waveguide when a dielectric material is formed in the internal space of the waveguide.

[0039] FIG. 6 and FIG. 7 are drawings illustrating a case where a plurality of dielectric materials having different dielectric constants are formed in the internal space of a waveguide according to one embodiment of the present invention.

[0040] FIG. 8 is a drawing exemplarily showing the spacing of slots formed in a waveguide when a plurality of dielectric materials having different dielectric constants are formed in the internal space of the waveguide according to the present invention.

[0041] Before describing the present invention in detail, it should be understood that the terms or words used in this specification should not be interpreted as being unconditionally limited to their usual or dictionary meanings, and that the inventor of the present invention may appropriately define and use the concepts of various terms in order to explain his or her invention in the best possible manner, and further, that these terms or words should be interpreted as meanings and concepts that are consistent with the technical idea of ​​the present invention.

[0042] That is, it should be noted that the terms used in this specification are only used to describe preferred embodiments of the present invention, and are not intended to specifically limit the contents of the present invention, and that these terms are defined in consideration of various possibilities of the present invention.

[0043] Additionally, in this specification, it should be noted that singular expressions may include plural expressions unless the context clearly indicates a different meaning, and similarly, even if expressed in plural, may include a singular meaning.

[0044] Throughout this specification, whenever a component is described as "including" another component, it may mean that the component may further include any other component, rather than excluding any other component, unless specifically stated otherwise.

[0045] Furthermore, when it is described that a component is "located within, connected to, or installed within" another component, it should be understood that the component may be installed in direct connection with or in contact with the other component, may be installed spaced apart from the other component by a certain distance, and if it is installed spaced apart from the other component by a certain distance, there may be a third component or means for fixing or connecting the component to the other component, and the description of this third component or means may be omitted.

[0046] On the other hand, if a component is described as being "directly connected" or "directly connected" to another component, it should be understood that no third component or means exists.

[0047] Likewise, other expressions that describe the relationship between components, such as "between" and "directly between", or "adjacent to" and "directly adjacent to", should be interpreted as having the same meaning.

[0048] In addition, it should be noted that the terms “one side,” “the other side,” “one side,” “the other side,” “first,” “second,” etc. in this specification, if used, are used to clearly distinguish one component from another component, and the meaning of the component is not limited by such terms.

[0049] In addition, terms related to position, such as “upper,” “lower,” “left,” and “right,” etc., in this specification, if used, should be understood to indicate relative positions of the corresponding components in the corresponding drawings, and unless absolute positions are specified for these positions, these position-related terms should not be understood to refer to absolute positions.

[0050] Moreover, in the specification of the present invention, it should be noted that the terms “part”, “device”, “module”, “device”, etc., if used, mean a unit capable of processing one or more functions or operations, which may be implemented by hardware or software, or a combination of hardware and software.

[0051] In addition, in this specification, when specifying the drawing numbers for each component of each drawing, the same component has the same drawing number even if the component is shown in a different drawing, that is, the same reference number indicates the same component throughout the specification.

[0052] In the drawings attached to this specification, the size, position, connection relationship, etc. of each component constituting the present invention may be described with some exaggeration, reduction, or omission in order to sufficiently clearly convey the idea of ​​the present invention or for convenience of explanation, and therefore the proportions or scales may not be strict.

[0053] In addition, in the following description of the present invention, a detailed description of a configuration that may unnecessarily obscure the gist of the present invention, for example, a known technology including a prior art, may be omitted.

[0054]

[0055] Hereinafter, a microwave heat treatment device using a dielectric material according to a preferred embodiment of the present invention will be described in detail with reference to the attached drawings.

[0056] FIG. 1 is a schematic diagram showing the configuration of a microwave heat treatment device using a dielectric material according to one embodiment of the present invention.

[0057] As shown in FIG. 1, a microwave heat treatment device (100) using a dielectric material according to one embodiment of the present invention may include a treatment chamber (110), a vacuum pump (120), a microwave generation unit (130), a temperature measurement unit (140), a waveguide (150), etc.

[0058] The processing chamber (110) has a certain space inside and may have a structure capable of maintaining the internal space in any one of a normal pressure state, a pressurized state, and a vacuum state.

[0059] Accordingly, the processing chamber (110) may be equipped with a vacuum pump (120) capable of discharging gas inside the chamber, and may also be equipped with a venting device capable of injecting gas into the chamber.

[0060] The microwave generator (130) can be installed outside the processing chamber (110) and can be driven under the control of a control unit (not shown) to generate microwaves.

[0061] In an embodiment of the present invention, the microwave generator (130) may be implemented as a magnetron, but is not limited thereto.

[0062] The temperature measuring unit (140) can measure the temperature of the target material (10) to be heat treated and provide the measured value to the control unit (not shown).

[0063] The waveguide (150) is connected to a microwave generator (130) at one end and can be inserted into the processing chamber (110) at the other end.

[0064] The waveguide (150) may have at least one slot (155) formed on one side (e.g., the upper or lower surface of the waveguide) of the portion inserted inside the processing chamber (110).

[0065] Here, the slot (155) formed on one side of the waveguide (150) may be formed in any one of a circle, square, triangle, oval, and rectangle as shown in FIG. 2, but is not limited thereto.

[0066] In addition, the slot (155) formed on one side of the waveguide (150) may be formed such that at least one slot (155) having the same shape is spaced apart at a predetermined interval as shown in (a), (b), and (e) of FIG. 3, and as shown in (c) of FIG. 3, one or more slots (155) may be formed on one side of the waveguide (150), and as shown in (d) of FIG. 3, slots (155) having different shapes are spaced apart at a predetermined interval, but the size of the slots (155) may be formed to increase as they move away from the part where the center of the target material (10) is located, and as shown in (f) of FIG. 3, at least one slot (155) having the same shape may be spaced apart at a different interval, and as shown in (g) of FIG. 3, at least one slot (155) having the same shape is spaced apart at a different interval symmetrically, but the target The spacing between the materials (10) may be formed to become narrower as it moves away from the center of the material, but is not limited thereto.

[0067] Here, the slot (155) formed on one side of the waveguide (150) may be formed only in a portion corresponding to a position where the target material (10) is placed in the portion inserted inside the processing chamber (110), or may be formed in the entire portion inserted inside the processing chamber (110), but is not limited thereto.

[0068] In addition, at least one slot (155) formed on one surface of the waveguide (150) may be formed at equal intervals to form at least one row. At this time, the position of the slot (155) forming the row may be formed to be in a straight line with the slot (155) of the neighboring row, or may be formed to be misaligned with the slot of the neighboring row.

[0069] The waveguide (150) can transmit microwaves generated by the microwave generator (130) into the processing chamber (110) to heat the target material (10) placed in the processing chamber (110).

[0070] The waveguide (150) can have a dielectric material (160) formed in the internal space and slot (155), and can transmit microwaves generated by the microwave generator (130) through the formed dielectric material (160) into the processing chamber (110) to heat the target material (10) placed in the processing chamber (110).

[0071] In general, when the internal space of the waveguide (150) is empty, the position of the slot (155) formed on one side of the waveguide (150) is formed at the λ / 4 position of the wavelength supplied into the interior of the waveguide (150), as shown in FIG. 4.

[0072] On the other hand, when a dielectric material (160) is formed in the internal space of the waveguide (150), the wavelength of the microwave supplied from the microwave generator (130) is reduced within the dielectric material (160) due to the dielectric constant of the dielectric material (160), as shown in FIG. 5, and the position of the slot (155) is determined as λ / 4 of the reduced wavelength, so that the spacing of the slots (155) formed on one surface of the waveguide (150) is formed more closely.

[0073] In an embodiment of the present invention, a plurality of dielectric materials (160) having different dielectric constants can be formed in the internal space of the waveguide (150).

[0074] As described above, when a plurality of dielectric materials (160) having different dielectric constants are formed in the internal space of the waveguide (150), the plurality of dielectric materials (160) can be arranged continuously along the longitudinal direction of the waveguide (150) as shown in FIG. 6.

[0075] At this time, a plurality of dielectric materials (160) can be sequentially arranged along the longitudinal direction of the waveguide (150) in order of the largest dielectric constant.

[0076] Specifically, a plurality of dielectric materials (160) may be formed such that a dielectric material (160) having a large dielectric constant is formed in a section corresponding to a portion where the target material (10) is located, and a dielectric material (160) having a sequentially decreasing dielectric constant may be formed toward the other end where the microwave generating unit (130) is connected.

[0077] FIG. 6 (a) is a drawing showing an example of a case where two dielectric materials (160) having different dielectric constants are continuously formed along the longitudinal direction of the waveguide (150) in the internal space of the waveguide (150), FIG. 6 (b) is a drawing showing an example of a case where three dielectric materials (160) having different dielectric constants are continuously formed along the longitudinal direction of the waveguide (150) in the internal space of the waveguide (150), FIG. 6 (c) is a drawing showing an example of a case where four dielectric materials (160) having different dielectric constants are continuously formed along the longitudinal direction of the waveguide (150) in the internal space of the waveguide (150), and FIG. 6 (d) is a drawing showing an example of a case where n dielectric materials (160) having different dielectric constants are continuously formed along the longitudinal direction of the waveguide (150) in the internal space of the waveguide (150). This is the drawing shown.

[0078] In this way, when a plurality of dielectric materials (160) are arranged in a continuous manner along the longitudinal direction of the waveguide (150), it is preferable that a dielectric material (160) having the largest dielectric constant among the plurality of dielectric materials (160) is formed at the bottom of a section in which at least one slot (155) is formed, which corresponds to a section in which the target material (10) is located.

[0079] Here, a dielectric material (160) can be formed in a slot (155) formed on one side of the waveguide (150) to form a dielectric load (165).

[0080] It is preferable that the dielectric load (165) formed in this manner be formed of the same dielectric material (160) as the dielectric material (160) formed at the bottom of the section where at least one slot (155) is formed. That is, the dielectric load (165) may be formed of the same dielectric material (160) as the dielectric material (160) having the highest dielectric constant among the plurality of dielectric materials (160).

[0081] In addition, when a plurality of dielectric materials (160) having different dielectric constants are formed in the internal space of the waveguide (150), the plurality of dielectric materials (160) can be laminated along the transverse direction of the waveguide (150) as shown in FIG. 7.

[0082] At this time, a plurality of dielectric materials (160) can be sequentially stacked along the transverse direction of the waveguide (150) starting from those with a large dielectric constant.

[0083] FIG. 7 (a) is a drawing showing an example of a case where two dielectric materials (160) having different dielectric constants are laminated along the transverse direction of the waveguide (150) in the internal space of the waveguide (150), FIG. 7 (b) is a drawing showing an example of a case where three dielectric materials (160) having different dielectric constants are laminated along the transverse direction of the waveguide (150) in the internal space of the waveguide (150), FIG. 7 (c) is a drawing showing an example of a case where four dielectric materials (160) having different dielectric constants are laminated along the transverse direction of the waveguide (150) in the internal space of the waveguide (150), and FIG. 7 (d) is a drawing showing an example of a case where n dielectric materials (160) having different dielectric constants are laminated along the transverse direction of the waveguide (150) in the internal space of the waveguide (150).

[0084] In this way, when a plurality of dielectric materials (160) are laminated along the transverse direction of the waveguide (150), it is preferable that the dielectric material (160) laminated on top that comes into contact with the dielectric load (165) is formed of a dielectric material (160) having the largest dielectric constant among the plurality of dielectric materials (160).

[0085] In addition, when a plurality of dielectric materials (160) are laminated along the transverse direction of the waveguide (150), it is preferable that the dielectric rod (165) formed in the slot (155) is formed of the same dielectric material (160) as the dielectric material (160) laminated at the top among the plurality of dielectric materials (160) laminated in the internal space of the waveguide (150). That is, the dielectric rod (165) may be formed of the same dielectric material (160) as the dielectric material (160) having the largest dielectric constant among the plurality of dielectric materials (160).

[0086] In addition, when a plurality of dielectric materials (160) are laminated along the transverse direction of the waveguide (150), the dielectric material (160) laminated on top that comes into contact with the dielectric load (165) is formed to be larger than the section in which at least one slot (155) is formed, as shown in FIG. 7, so as to cover the entire section in which at least one slot (155) is formed.

[0087] And when a plurality of dielectric materials (160) are laminated along the transverse direction of the waveguide (150), the dielectric material (160) laminated at the bottom can be formed to surround all of the remaining dielectric materials (160) laminated thereon.

[0088] As described above, the waveguide (150) may be configured to be installed on the lower surface of the processing chamber (110) so that the target material (10) is placed on the upper surface of the waveguide (150), may be configured to be installed on the upper surface inside the processing chamber (110) so as to irradiate microwaves to the target material (10) placed on the lower surface of the processing chamber (110), and may be configured to be installed on the side surface inside the processing chamber (110) so as to irradiate microwaves to the target material (10) placed on the lower surface of the processing chamber (110).

[0089] Meanwhile, in the embodiment of the present invention, the microwave generating unit (130) may be formed in multiple units, and each microwave generating unit (130) may generate microwaves having the same wavelength (frequency) or may generate microwaves having different wavelengths (frequencies).

[0090] As described above, when the microwave generator (130) is composed of multiple units, the waveguide (150) can be implemented as one waveguide, can be implemented as the same number of waveguides as the microwave generator (130), or can be implemented as a smaller number of waveguides than the number of microwave generators (130).

[0091] In addition, as described above, a dielectric material (160) is formed in a slot (155) formed in a waveguide (150) to form a dielectric rod (165). The dielectric rod (165) formed in the slot (155) may be formed to have a height equal to the thickness of the slot (155), may be formed to have a height higher than the thickness of the slot (155), may be formed to have a height lower than the thickness of the slot (155), and may be formed to have different heights, but is not limited thereto.

[0092] In addition, when the dielectric load (165) formed in the slot (155) is formed with a height higher than the thickness of the slot (155), the cross-sectional shape of the dielectric load (165) protruding out of the slot (155) may be formed in any one of a square, a semicircle, a semi-ellipse, a triangle, a spherical groove, and a trapezoidal shape, but is not limited thereto.

[0093] As described above, in the embodiment of the present invention, a plurality of dielectric materials (160) having different dielectric constants can be formed in the internal space of the waveguide (150).

[0094] As described above, when a plurality of dielectric materials (160) having different dielectric constants are formed in the internal space of the waveguide (150), the microwaves generated by the microwave generator (130) are transmitted through the plurality of dielectric materials (160) having different dielectric constants formed in the internal space of the waveguide (150).

[0095] When microwaves pass through a plurality of dielectric materials (160) having different dielectric constants, the wavelength of the microwaves decreases each time the microwaves pass through the plurality of dielectric materials (160) due to the dielectric constant increasing each time the microwaves pass through the dielectric materials (160).

[0096] For example, as shown in FIG. 8, when two dielectric materials (160) having different dielectric constants are formed in the internal space of the waveguide (150), the wavelength (λ_1) of the microwave supplied from the microwave generator (130) is first reduced (λ_3) within the first dielectric material (160), and the wavelength (λ_3) that is first reduced while passing through the first dielectric material (160) is second reduced (λ_4) within the second dielectric material (160), and the position of the slot (155) is determined as λ / 4 of the wavelength (λ_4) that is second reduced while passing through the second dielectric material (160).

[0097] In this way, when the wavelength of the microwave decreases while passing through a plurality of dielectric materials (160), the microwave becomes easier to escape through the slots (155) formed on one side of the waveguide (150), and the slots (155) can be formed more densely on one side of the waveguide (150), thereby enabling the target material (10) to be heated more uniformly when the target material (10) is heated using microwaves.

[0098] That is, when the slots (155) are formed at a close interval, more interference sections of microwaves reaching the target material (10) can be formed, thereby inducing a uniform temperature rise within the target material (10).

[0099] At this time, the interference section of the microwave can be formed by adjusting the spacing between the target material (10) and the slot (155) formed on one side of the waveguide (150) (or the dielectric load (165) formed in the slot (155), the spacing between the slots (155), the frequency, etc.

[0100] Above, although some examples have been given and various preferred embodiments of the present invention have been described, the description of the various embodiments described in the “Specific Details for Carrying Out the Invention” section is merely exemplary, and those skilled in the art to which the present invention pertains will readily understand that they can carry out various modifications of the present invention or carry out equivalent implementations of the present invention based on the above description.

[0101] In addition, since the present invention can be implemented in various other forms, the present invention is not limited by the above description, and the above description is provided only to make the disclosure of the present invention complete and to fully inform a person having ordinary skill in the art to which the present invention belongs of the scope of the present invention, and it should be understood that the present invention is defined only by each claim of the claims.

[0102] [Explanation of symbols]

[0103] 10. Target material,

[0104] 100. Microwave heat treatment device,

[0105] 110. Processing chamber,

[0106] 120. Vacuum pump,

[0107] 130. Microwave generator,

[0108] 140. Temperature measuring unit,

[0109] 150. Waveguide,

[0110] 155. Slot,

[0111] 160. Genetic material,

[0112] 165. Genomic Load

Claims

1. A processing chamber having a certain space inside; A microwave generating unit installed outside the above processing chamber to generate microwaves; and A microwave heat treatment device using a dielectric material, characterized in that it comprises a waveguide, which is connected at one end to the microwave generator, has the other end inserted into the processing chamber, has at least one slot formed on one side of the portion inserted into the processing chamber, contains a plurality of dielectric materials having different dielectric constants in the internal space, and transmits microwaves generated by the microwave generator into the processing chamber through the plurality of dielectric materials to heat a target material placed in the processing chamber.

2. In paragraph 1, The above plurality of genetic materials are, A microwave heat treatment device using a dielectric material, characterized in that the dielectric material is continuously arranged along the longitudinal direction of the waveguide.

3. In paragraph 2, The above plurality of genetic materials are, A microwave heat treatment device using a dielectric material, characterized in that dielectric constants are sequentially arranged along the longitudinal direction of the waveguide, starting from a large dielectric constant.

4. In paragraph 2 or 3, A microwave heat treatment device using a dielectric material, characterized in that when the plurality of dielectric materials are arranged continuously along the longitudinal direction of the waveguide, a dielectric material having the largest dielectric constant among the plurality of dielectric materials is formed at the bottom of a section in which at least one slot is formed.

5. In paragraph 4, A dielectric material is formed in at least one of the slots to form a dielectric load, A microwave heat treatment device using a dielectric material, characterized in that the dielectric load is formed of the same dielectric material as the dielectric material formed in the lower portion of the section in which at least one slot is formed.

6. In paragraph 1, The above plurality of genetic materials are, A microwave heat treatment device using a dielectric material, characterized in that it is laminated along the transverse direction of the above waveguide.

7. In paragraph 6, The above plurality of genetic materials are, A microwave heat treatment device using a dielectric material, characterized in that the dielectric material is sequentially laminated along the transverse direction of the waveguide so that a dielectric material having a large dielectric constant is positioned on top.

8. In paragraph 6 or 7, A microwave heat treatment device using a dielectric material, characterized in that when the plurality of dielectric materials are laminated along the transverse direction of the waveguide, the dielectric material laminated on top is formed to be larger than a section in which at least one slot is formed.

9. In paragraph 6 or 7, A microwave heat treatment device using a dielectric material, characterized in that when the plurality of dielectric materials are laminated along the transverse direction of the waveguide, the dielectric material laminated at the bottom is formed to surround all of the remaining dielectric materials laminated thereon.

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