Sample support

Abstract

This sample support body includes a base body, a heating conductor, a cavity part, and a low heat conduction part. The base body is made of a ceramic and has a first surface which is a support surface of a sample, and a second surface which is a surface opposite to the first surface. The heating conductor is positioned inside the base body at an interval in a cross-sectional view of the base body in a direction orthogonal to the first surface. The cavity part is positioned inside the base body, and at least a part of the cavity part is positioned between the adjacent heating conductors in a cross-sectional view. In a cross-sectional view, at least a part of the low heat conduction part is positioned between the adjacent heating conductor and the cavity part, and the thermal conductivity of the low heat conduction part is lower than that of the base body.

Description

Sample Support

[0001] The present disclosure relates to sample supports.

[0002] For example, a heater having a disk-shaped base made of ceramic and a heat generating conductor embedded in the base is known (see Patent Document 1). Also, a wafer tray is known that is attached to a testing apparatus that tests a plurality of devices under test formed on a semiconductor wafer and has a heater for heating at least the mounting surface on which the semiconductor wafer is mounted (see Patent Document 2).

[0003] International Publication No. 2022 / 163799 Patent No. 4457180

[0004] A sample support according to one aspect of the embodiment includes a base, a heating conductor, a cavity, and a low thermal conductivity portion. The base is made of ceramic and has a first surface that supports the sample and a second surface that is the surface opposite to the first surface. The heating conductors are located inside the base at intervals in a cross-sectional view of the base in a direction perpendicular to the first surface. The cavity is located inside the base, and at least a portion of the cavity is located between adjacent heating conductors in the cross-sectional view. The low thermal conductivity portion is located at least a portion of the cavity between adjacent heating conductors and the cavity in the cross-sectional view, and has a lower thermal conductivity than the base.

[0005] FIG. 1 is a schematic perspective view of a system according to the first embodiment. FIG. 2 is a schematic cross-sectional view of a sample support according to the first embodiment. FIG. 3 is a schematic cross-sectional view taken along the line II-II in FIG. 2. FIG. 4 is a schematic cross-sectional perspective view taken along the line III-III in FIG. 3. FIG. 5 is a diagram showing an example of a schematic enlarged view of part H shown in FIG. 2. FIG. 6 is a schematic cross-sectional view of the periphery of a cavity in a sample support according to the second embodiment. FIG. 7 is a schematic cross-sectional view of the periphery of a cavity in a sample support according to the third embodiment. FIG. 8 is a schematic cross-sectional view of a sample support according to the fourth embodiment. FIG. 9 is a schematic cross-sectional view taken along the line IV-IV in FIG. 8.

[0006] Hereinafter, a mode for carrying out the sample support according to the present disclosure (hereinafter referred to as "embodiment") will be described in detail with reference to the drawings. Note that the sample support according to the present disclosure is not limited to this embodiment. Furthermore, each embodiment can be appropriately combined within the scope of not causing any contradiction in the processing content. Furthermore, the same parts in each of the following embodiments will be given the same reference numerals, and duplicated explanations will be omitted.

[0007] Furthermore, in the following embodiments, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.

[0008] The drawings referred to below are schematic for the sake of convenience. Therefore, details may be omitted, and the dimensional ratios do not necessarily correspond to the actual ones. In addition, in the drawings referred to below, the vertically upward direction is defined as the Z-axis direction for ease of understanding.

[0009] The conventional technology has room for further improvement in terms of improving the accuracy of temperature control by the heater, and therefore, it is desirable to realize a sample support that can improve the accuracy of temperature control.

[0010] First Embodiment First, the configuration of a system according to the first embodiment will be described with reference to Figures 1 and 2. Figure 1 is a schematic perspective view of a system 1 according to the first embodiment. Figure 2 is a schematic cross-sectional view of a sample support 2 according to the first embodiment. Figure 2 is a schematic cross-sectional view taken along the line II shown in Figure 1.

[0011] 1 heats, for example, a semiconductor wafer, a quartz wafer, or other wafer (hereinafter simply referred to as a "wafer"). For example, the system 1 may be mounted on a substrate processing apparatus that performs substrate processing such as plasma processing on the wafer. The wafer is an example of a sample that is placed on the sample support 2.

[0012] As shown in Fig. 1, the system 1 may include a sample support 2. Furthermore, as shown in Figs. 1 and 2, the sample support 2 may include a substrate 10 and a heating conductor 30.

[0013] The base 10 may have a disk shape with thickness in the vertical direction (Z-axis direction). Specifically, the base 10 may have an upper surface 101 and a lower surface 102 that are circular in plan view, and a side surface 103 connecting the upper surface 101 and the lower surface 102. The upper surface 101 and the lower surface 102 of the base 10 may be approximately parallel. The upper surface 101 is an example of a first surface of the base 10. The lower surface 102 is an example of a second surface that is the surface opposite to the first surface. A wafer W (see FIG. 2 ), an example of a sample, may be placed on the upper surface 101 of the base 10. That is, the upper surface 101 of the base 10 may be a support surface for the sample. In this case, the upper surface 101 of the base 10 corresponds to a heating surface heated by the heating conductor 30. The planar shape and various dimensions of the base 10 may be set appropriately in consideration of the shape and dimensions of the sample.

[0014] The base 10 is made of, for example, ceramics and has insulating properties. The ceramics that make up the base 10 include, for example, aluminum nitride (AlN) and aluminum oxide (Al ２ O ３ , alumina), silicon carbide (SiC), silicon nitride (Si ３ N ４ The main component may be a sintered body containing aluminum nitride (YAG) or the like as a main component. The main component is, for example, a material that occupies 50 mass % or more or 80 mass % or more of the material. When the main component of the substrate 10 is aluminum nitride, the substrate 10 may contain a compound of yttrium (Y). Examples of the Y compound include YAG (Y ３ Al ５ O １２ ) and Y ２ O ３ Examples include:

[0015] The shape of the base 10 is arbitrary. For example, the shape of the base 10 is circular in a plan view, but is not limited to this, and may be elliptical, rectangular, trapezoidal, or the like in a plan view. Also, here, an example is shown in which the upper surface 101 of the base 10 is a uniformly flat surface, but the upper surface 101 of the base 10 may have, for example, grooves, steps, or the like.

[0016] As shown in Fig. 2, the heating conductor 30 is located inside the base 10. Specifically, the heating conductor 30 is located between the upper surface 101 and the lower surface 102 of the base 10. The heating conductor 30 may be made of, for example, a metal such as Ni, W, Mo, or Pt, or an alloy containing at least one of the above metals. The heating conductor 30 may also be, for example, a heater.

[0017] The heating conductors 30 may be located inside the base 10 at intervals in a cross-sectional view of the base 10 in a direction (Z-axis direction) perpendicular to the upper surface 101 (hereinafter referred to as a "side cross-sectional view") that is a cross section passing through the central axis L0 in the radial direction of the base 10 shown in Figure 2. The heating conductors 30 may extend along the upper surface 101.

[0018] The sample support 2 may have two terminals 41 connected to the heating conductor 30. In the example of Fig. 2, only one terminal 41 is shown. However, the connection position of the terminal 41 is not limited to this, and can be adjusted by using vias or wiring formed in the base 10.

[0019] The heating conductor 30 may be connected to a power supply unit via a power supply line connected to the terminal 41. The heating conductor 30 generates heat by Joule heat generated by the power supplied from the power supply unit. This allows the sample support 2 to heat the wafer W placed on the upper surface 101 of the base 10.

[0020] The terminal 41 is, for example, a metal having a certain length in the vertical direction. The upper end of the terminal 41 may be located inside the base 10, and the lower end may be located outside the base 10. In the illustrated example, the terminal 41 is electrically connected to the heating conductor 30. The shape of the terminal 41 is arbitrary. In one embodiment, the shape of the terminal 41 may be cylindrical. The terminal 41 may be, for example, a metal such as Ni, W, Mo, or Pt, or an alloy containing at least one of the above metals, or may be a Ni-Co-Fe alloy.

[0021] Furthermore, the sample support 2 may have a shaft (not shown). The shaft may be connected to the lower surface 102 of the substrate 10. The system 1 may have a control unit (not shown). The control unit may control the supply of power from a power supply unit (not shown).

[0022] It should be noted that, for example, an RF (radio frequency) electrode for generating plasma may be located inside the base 10 and above the heating conductor 30 .

[0023] The system 1 is configured as described above, and may heat the wafer W placed on the upper surface 101 by using power supplied from the power supply unit to generate heat in the heating conductor 30 inside the base 10.

[0024] The heating conductor 30 may be disposed with a certain distance from the side surface 103 of the base 10. In other words, the heating conductor 30 has a smaller diameter than the upper surface 101 of the base 10. Note that the heating conductor 30 may also have a smaller diameter than the wafer W placed on the upper surface 101 of the base 10.

[0025] In adjacent heating conductors 30, heat generated from one heating conductor 30 is easily transferred to the other heating conductor 30. Therefore, the heat transferred from one adjacent heating conductor 30 to the other may reduce the accuracy of temperature control of the other heating conductor 30. In order to improve the accuracy of temperature control of the sample support 2, it is desirable to reduce the heat conduction between adjacent heating conductors 30.

[0026] In contrast, the sample support 2 has a cavity 50. The cavity 50 is located inside the substrate 10. In the side cross-sectional view shown in FIG. 2, the cavity 50 may be located between adjacent heating conductors 30. However, this is not limited to this, and in the side cross-sectional view, at least a portion of the cavity 50 may be located between adjacent heating conductors 30. A gas, such as air, may be present inside the cavity 50. However, the gas present inside the cavity 50 is not limited to air, and may be, for example, an inert gas. Examples of inert gases that can be used include argon, helium, and nitrogen. Alternatively, the inside of the cavity 50 may be in a vacuum state or a reduced-pressure state. A reduced-pressure state refers to a state in which the pressure inside the cavity 50 is lower than atmospheric pressure. A vacuum state is a reduced-pressure state of a high vacuum. By creating an atmospheric or reduced-pressure atmosphere inside the cavity 50, the cavity 50 has a lower thermal conductivity than the substrate 10. Therefore, by positioning the cavity 50 between adjacent heating conductors 30, it is possible to reduce the heat conduction from one of the adjacent heating conductors 30 to the other. This reduces the thermal influence that one heating conductor 30 receives from another adjacent heating conductor 30. Furthermore, by creating a vacuum or reduced pressure inside the cavity 50, it is possible to reduce the load on the base 10 caused by the thermal expansion of the gas when the inside of the cavity 50 is a closed space. However, this is not limiting, and the inside of the cavity 50 may be an open space.

[0027] The sample support 2 has, inside the base 10, low thermal conductive portions 60a, 60b, 60c, and 60d having a thermal conductivity lower than that of the base 10. In the side cross-sectional view shown in Fig. 2, at least a portion of the low thermal conductive portions 60a, 60b, 60c, and 60d may be located between adjacent heating conductors 30 and the cavity 50. In the illustrated example, in the side cross-sectional view, the low thermal conductive portions 60a and 60c are located between one of the adjacent heating conductors 30 and the cavity 50, and the low thermal conductive portions 60b and 60d are located between the other adjacent heating conductor 30 and the cavity 50.

[0028] Furthermore, in a side cross-sectional view, an imaginary line that is perpendicular to the upper surface 101 and includes the outer circumferential end 31 of the heating conductor 30 is defined as an "outer circumferential imaginary line LU." The cavity 50 and the low thermal conductive portions 60a, 60b, 60c, and 60d may be located between the central axis L0 of the base 10 in a direction perpendicular to the upper surface 101 and the outer circumferential imaginary line LU. The cavity 50 and the low thermal conductive portions 60a, 60b, 60c, and 60d are located along the inner periphery of the heating conductor 30 at predetermined intervals.

[0029] FIG. 3 is a schematic cross-sectional view taken along the line II-II in FIG. 2 . FIG. 4 is a schematic perspective cross-sectional view taken along the line III-III in FIG. 3 . In the cross-sectional view shown in FIG. 3 , i.e., a cross-section of the substrate 10 passing through the cavity 50 and the heating conductor 30 and parallel to the top surface 101 (hereinafter referred to as a "planar cross-sectional view"), the heating conductor 30 may be spiral-shaped. FIG. 3 illustrates a so-called single-zone heater having ends at the innermost and outermost peripheries. In this case, the sample support 2 has one heating conductor 30 spirally wound clockwise from the outer periphery to the inner periphery within a range narrower than the top surface 101. However, the sample support 2 is not limited to this, and may also have one heating conductor 30 spirally wound counterclockwise from the outer periphery to the inner periphery. The heating conductor 30 is not limited to a spiral shape, and may be wound in a meandering or circular shape. The heating conductor 30 may also be a multi-zone heater that branches out in a tournament shape and can individually control multiple regions on the upper surface 101. In this case, the sample support 2 may have multiple heating conductors 30 that are laid out in different regions on the upper surface 101 of the substrate 10. When the heating conductor 30 is a multi-zone heater, the number of power supply lines increases according to the number of regions that are individually controlled.

[0030] In the examples shown in FIGS. 3 and 4 , the sample support 2 has one cavity 50 located between adjacent heating conductors 30 and spiraling clockwise from the outer periphery to the inner periphery in an area narrower than the upper surface 101. The cavity 50 may also spiral counterclockwise from the outer periphery to the inner periphery along the heating conductor 30. Furthermore, when the heating conductor 30 is a multi-zone heater, the sample support 2 may have multiple cavities 50 along the multiple heating conductors 30 and between adjacent heating conductors 30. The cavities 50 may be located at equal intervals from each adjacent heating conductor 30 in the radial direction of the base 10. However, this is not limiting, and at least a portion of the cavity 50 may be located between adjacent heating conductors 30.

[0031] The sample support 2 also has four low thermal conductivity sections 60a, 60b, 60c, and 60d located between adjacent heating conductors 30 and spirally extending clockwise from the outer periphery to the inner periphery in an area narrower than the upper surface 101. The low thermal conductivity sections 60a, 60b, 60c, and 60d may also be spirally extending counterclockwise from the outer periphery to the inner periphery along the adjacent heating conductors 30. The low thermal conductivity sections 60a and 60c may be located between one of the adjacent heating conductors 30 and the cavity 50, spirally extending along the outer surface of the cavity 50. The low thermal conductivity sections 60b and 60d may also be located between the other adjacent heating conductor 30 and the cavity 50, spirally extending along the inner surface of the cavity 50. Furthermore, when the heating conductor 30 is a multi-zone heater, the sample support 2 may have four low thermal conductivity portions 60a, 60b, 60c, and 60d for each of the multiple cavities 50 located between adjacent heating conductors 30.

[0032] The low thermal conductive portions 60a, 60b, 60c, and 60d may be positioned at equal intervals in the radial direction of the base 10 from the end face of the heating conductor 30 that is closest to each of the low thermal conductive portions 60a, 60b, 60c, and 60d among the adjacent heating conductors 30. In a plan view, the low thermal conductive portions 60a, 60b, 60c, and 60d may be positioned at equal intervals in the radial direction of the base 10 from the cavity 50. The low thermal conductive portion 60a and the low thermal conductive portion 60c may overlap in a plan view. The low thermal conductive portion 60b and the low thermal conductive portion 60d may overlap in a plan view. However, this is not limited thereto, and the low thermal conductive portion 60a and the low thermal conductive portion 60c may partially overlap in a plan view, or may not overlap in a plan view. Furthermore, low thermal conductive portion 60b and low thermal conductive portion 60d may or may not overlap in a plan view. Furthermore, low thermal conductive portion 60a and low thermal conductive portion 60b may be positioned at equal intervals in the radial direction of base 10 from the outer and inner surfaces of adjacent cavities 50 in a plan view. Furthermore, low thermal conductive portion 60c and low thermal conductive portion 60d may be positioned at equal intervals in the radial direction of base 10 from the outer and inner surfaces of adjacent cavities 50 in a plan view.

[0033] Furthermore, low thermal conductive portions 60a and 60c are spaced apart from the outer surface of cavity 50 and do not overlap with cavity 50 in plan view, but may at least partially overlap with cavity 50 in plan view. Low thermal conductive portions 60b and 60d are spaced apart from the inner surface of cavity 50 and do not overlap with cavity 50 in plan view, but may at least partially overlap with cavity 50 in plan view. Hereinafter, low thermal conductive portions 60a, 60b, 60c, and 60d will also be collectively referred to as low thermal conductive portions 60. The number of low thermal conductive portions 60 is not limited to four and may be one or more.

[0034] A gas, such as air, may be present inside the low thermal conductive portion 60. However, the gas present inside the low thermal conductive portion 60 is not limited to air and may be, for example, an inert gas. Examples of inert gases that can be used include argon, helium, and nitrogen. Alternatively, the interior of the low thermal conductive portion 60 may be in a vacuum state or a reduced pressure state. The vacuum state is a high vacuum reduced pressure state. By creating an atmospheric or reduced pressure atmosphere inside the low thermal conductive portion 60, the low thermal conductive portion 60 has a lower thermal conductivity than the base 10. Therefore, by positioning the low thermal conductive portion 60 between adjacent heating conductors 30, the heat conduction from one adjacent heating conductor 30 to the other can be reduced. This reduces the thermal influence of the heating conductor 30 on the adjacent heating conductor 30. Furthermore, by creating a vacuum or reduced pressure inside the low thermal conductive portion 60, even if the interior of the low thermal conductive portion 60 is a closed space, the load on the base 10 due to the thermal expansion of the gas can be reduced. However, this is not limited to this, and the interior of the low thermal conductive portion 60 may be an open space.

[0035] [Sample Support According to First Embodiment] The sample support 2 according to the first embodiment will be further described with reference to Fig. 5. Fig. 5 is a diagram showing an example of a schematic enlarged view of part H shown in Fig. 2.

[0036] In the side cross-sectional view shown in FIG. 5 , the cavity 50 may have a first side surface 50a located on the side surface 103 side of the base 10 and a second side surface 50b facing the first side surface 50a. The first side surface 50a and the second side surface 50b may be surfaces extending in a direction perpendicular to the upper surface 101 of the base 10. The first side surface 50a may be an outer side surface of the cavity 50. The second side surface 50b may be an inner side surface of the cavity 50. In the side cross-sectional view, the cavity 50 may have a first wall surface 50c1 that is the bottom surface of the cavity 50 and a second wall surface 50c2 that is located opposite the first wall surface 50c1 and is the ceiling surface of the cavity 50. The cavity 50 is formed by the first wall surface 50c1, the second wall surface 50c2, the first side surface 50a, and the second side surface 50b.

[0037] Furthermore, the corner where the second wall surface 50c2 and the first side surface 50a meet is defined as a "first corner A1," and the corner where the second wall surface 50c2 and the second side surface 50b meet is defined as a "second corner A2." Furthermore, the corner where the first wall surface 50c1 and the first side surface 50a meet is defined as a "third corner A3," and the corner where the first wall surface 50c1 and the second side surface 50b meet is defined as a "fourth corner A4." The low thermal conductivity portions 60a, 60b, 60c, and 60d may be located corresponding to the first corner A1, the second corner A2, the third corner A3, and the fourth corner A4, respectively.

[0038] In the side cross-sectional view shown in FIG. 5 , the distance from the upper surface 101 to the upper surface of the heating conductor 30 and the distance from the lower surface 102 to the lower surface of the heating conductor 30 may be equal. The heating conductor 30 may be located on the central axis bx of the base 10 in the Z-axis direction. A virtual line including the upper surfaces of adjacent heating conductors 30 is defined as a "first virtual line L1," and a virtual line including the lower surfaces of adjacent heating conductors 30 is defined as a "second virtual line L2." In this case, the low thermal conductivity portions 60 may be located above the first virtual line L1 and below the second virtual line L2 in the side cross-sectional view. For example, the low thermal conductivity portions 60a and 60b may be located above the first virtual line L1 in the side cross-sectional view. The low thermal conductivity portions 60c and 60d may be located below the second virtual line L2.

[0039] In a side cross-sectional view, the adjacent heating conductors 30, the cavity 50, and the low thermal conductive portions 60 may be line-symmetric with respect to the central axis ax of the cavity 50. For example, the low thermal conductive portions 60a and 60b may be line-symmetric with respect to the central axis ax in a side cross-sectional view. Furthermore, the low thermal conductive portions 60c and 60d may be line-symmetric with respect to the central axis ax of the cavity 50 in a side cross-sectional view. The central axis ax of the cavity 50 refers to an axis that passes through the center of the width of the first wall surface 50c1 and the second wall surface 50c2 and is perpendicular to the upper surface 101. The central axis bx refers to an axis that is horizontal to the upper surface 101 and is positioned at equal distances from the upper surface 101 and the lower surface 102 in the vertical direction of the upper surface 101.

[0040] An imaginary line including the second wall surface 50c2 is defined as a "first extension line E1," and an imaginary line including the first wall surface 50c1 is defined as a "second extension line E2." In this case, the low thermal conductive portions 60a, 60b may be located between the first imaginary line L1 and the first extension line E1. Furthermore, the low thermal conductive portions 60c, 60d may be located between the second imaginary line L2 and the second extension line E2.

[0041] An imaginary line connecting the first corner A1 and the first end surface 32 of the heating conductor 30 adjacent to the first side surface 50a of the cavity 50 is defined as a "third imaginary line L3." An imaginary line connecting the second corner A2 and the second end surface 33 of the heating conductor 30 adjacent to the second side surface 50b of the cavity 50 is defined as a "fourth imaginary line L4." An imaginary line connecting the third corner A3 and the first end surface 32 is defined as a "fifth imaginary line L5." An imaginary line connecting the fourth corner A4 and the second end surface 33 is defined as a "sixth imaginary line L6." In a side cross-sectional view, the low thermal conductive portions 60a, 60b, 60c, and 60d may be positioned so as to straddle the third imaginary line L3, the fourth imaginary line L4, the fifth imaginary line L5, and the sixth imaginary line L6, respectively.

[0042] The interior of the low thermal conductive portion 60 and the hollow portion 50 is an atmospheric atmosphere or a reduced pressure atmosphere, and has a lower thermal conductivity than the base 10. Therefore, the low thermal conductive portion 60 and the hollow portion 50 can reduce the movement of heat generated from the heating conductor 30 in the oblique directions indicated by the third imaginary line L3, the fourth imaginary line L4, the fifth imaginary line L5, and the sixth imaginary line L6.

[0043] Furthermore, by positioning the low thermal conductivity portions 60a, 60b, 60c, and 60d above the first imaginary line L1 or below the second imaginary line L2, the thickness of the base 10 from the first end face 32 and the second end face 33 of the heating conductor 30 to the cavity 50 can be increased. This makes it possible to prevent cracks from occurring between the heating conductor 30 and the cavity 50.

[0044] 5, the low thermal conductive portion 60 may be symmetrical with respect to the central axis bx of the base 10 in the Z-axis direction. However, this is not limiting, and the low thermal conductive portion 60 may be located either above or below the central axis bx of the base 10 in the Z-axis direction. For example, when the heating conductor 30 is located below the central axis bx, the low thermal conductive portion 60 may be located below the central axis bx, but not necessarily above the central axis bx. Furthermore, when the heating conductor 30 is located above the central axis bx, the low thermal conductive portion 60 may be located above the central axis bx, but not necessarily below the central axis bx.

[0045] The cavity 50 may be a flow path. When the cavity 50 is a flow path, as illustrated in Figures 2 and 5, the cavity 50 may have a first opening 53 that communicates with the flow path and is located on the upper surface 101 of the base 10, and a second opening 54 that communicates with the flow path and is located on the lower surface 102 or side surface 103 of the base 10. In the example illustrated in Figure 2, the second opening 54 is a flow path opening that communicates with the lower surface 102, but it may also be a flow path opening that communicates with the side surface 103.

[0046] 2 and 5 , the upper surface 101 may be a surface on which the wafer W is placed, and may have a plurality of first openings 53 located thereon. The plurality of first openings 53 are end portions of a plurality of through holes 50d that penetrate the base 10 from the upper surface 101 to the second wall surface 50c2 and that appear on the upper surface 101. The plurality of first openings 53 may be open at equal intervals on the upper surface 101. The plurality of through holes 50d penetrate the base 10 in the vertical direction at positions corresponding to the plurality of first openings 53, communicate with the cavity 50 at the second wall surface 50c2, and connect the interior of the cavity 50 to the upper surface 101.

[0047] The second opening 54 is the end of the through-hole 56 that appears on the lower surface 102. The through-hole 56 penetrates the base 10 from the lower surface 102 to the first wall surface 50c1 of the cavity 50 located in the center of the base 10. A pipe (not shown) communicating with the second opening 54 may be located outside the base 10. The pipe may be connected to an exhaust device (not shown). The exhaust device may be controlled by a control unit. The exhaust device may be configured to exhaust the inside of the flow path of the cavity 50 to a vacuum state or a reduced pressure state. A desired gas, such as an inert gas, may be supplied to the flow path of the cavity 50 by a gas supply device (not shown).

[0048] The inside of the low thermal conductive portion 60 may be hollow. When the base 10 is made of ceramics with high thermal conductivity such as aluminum nitride (AlN), the inside of the low thermal conductive portion 60 may be filled with alumina (AlN) having a lower thermal conductivity than the base 10. ２ O ３ However, when the interior of the low thermal conductive portion 60 is hollow, the structure can be simplified compared to when a member is embedded inside the low thermal conductive portion 60, making it easier to fabricate the low thermal conductive portion 60 and reducing the thermal conductivity. The low thermal conductive portion 60 may be a flow path.

[0049] [Effects of First Embodiment] The sample support 2 according to the first embodiment has adjacent heating conductors 30 spaced a predetermined distance apart inside the base 10. The sample support 2 heats the wafer W placed on the upper surface 101 of the base 10 by the heating conductors 30, thereby controlling the temperature of the wafer W.

[0050] However, in adjacent heating conductors 30, heat generated from one heating conductor 30 is easily transferred to the other heating conductor 30. Therefore, the heat transferred from one adjacent heating conductor 30 to the other may reduce the accuracy of temperature control of the other heating conductor 30. In order to provide a sample support 2 that can improve the accuracy of temperature control, it is desirable to reduce the thermal conduction between adjacent heating conductors 30.

[0051] Therefore, the sample support 2 according to the first embodiment has, in a side cross-sectional view, a cavity 50 between adjacent heating conductors 30, the cavity 50 having a lower thermal conductivity than the base 10. Furthermore, one or more low thermal conductive portions 60 having a lower thermal conductivity than the base 10 are provided between adjacent heating conductors 30 and the cavity 50. This reduces the heat conduction from one adjacent heating conductor 30 to the other. This reduces the influence of heat from adjacent heating conductors 30, thereby improving the accuracy of temperature control of the heating conductors 30. As a result, the temperature controllability of the upper surface 101 is improved, and the temperature of the wafer W can quickly reach a target temperature.

[0052] Furthermore, by positioning the low thermal conductivity portions 60a, 60b, 60c, and 60d above the first imaginary line L1 or below the second imaginary line L2, the thickness of the base 10 from the first end face 32 and the second end face 33 of the heating conductor 30 to the cavity 50 can be increased. This makes it possible to prevent cracks from occurring between the heating conductor 30 and the cavity 50. In particular, when the base 10 is a laminate of ceramic green sheets, cracks are likely to occur in the horizontal direction of the heating conductor 30. Even in such a case, by increasing the thickness of the base 10 from the heating conductor 30 to the cavity 50, it is possible to prevent cracks from occurring between the adjacent heating conductors 30 and the cavity 50.

[0053] In addition, in a side cross-sectional view, the low thermal conductive portions 60a, 60b, 60c, and 60d may be positioned so as to straddle the third imaginary line L3, the fourth imaginary line L4, the fifth imaginary line L5, and the sixth imaginary line L6, respectively. This can further reduce the transfer of heat from one adjacent heating conductor 30 to another. In this way, the influence of heat from the adjacent heating conductors 30 can be reduced, thereby further improving the accuracy of temperature control of the heating conductors 30.

[0054] Furthermore, by evacuating the cavity 50, the wafer W can be vacuum-sucked by utilizing the pressure difference between the rear surface pressure of the wafer W and the pressure inside the cavity 50. As a result, the wafer W can be held on the upper surface 101.

[0055] [Sample Support According to Second Embodiment] Next, a sample support according to a second embodiment will be described with reference to Fig. 6. Fig. 6 is a schematic cross-sectional view of the periphery of a cavity 50A in a sample support 2A according to the second embodiment. In the second embodiment, the system 1 has a sample support 2A instead of the sample support 2 according to the first embodiment.

[0056] Specifically, in the side cross-sectional view shown in FIG. 6 , the sample support 2A has a cavity 50A. The cavity 50A may be formed by a first wall surface 50c1, a second wall surface 50c2, a first side surface 50a, and a second side surface 50b. The cavity 50A may have a first corner A1, a second corner A2, a third corner A3, and a fourth corner A4. In the second embodiment, the low thermal conductive portions 60a, 60b, 60c, and 60d may be located corresponding to the first corner A1, the second corner A2, the third corner A3, and the fourth corner A4, respectively. The low thermal conductive portions 60a, 60b, 60c, and 60d may be located outside the area defined by the third virtual line L3, the fourth virtual line L4, the fifth virtual line L5, and the sixth virtual line L6.

[0057] Furthermore, in a side cross-sectional view, the low thermal conductive portions 60a, 60b, 60c, and 60d may be located above and below the cavity 50A. For example, as illustrated in Fig. 6, the low thermal conductive portions 60a and 60b may be located above the first extension line E1. Furthermore, the low thermal conductive portions 60c and 60d may be located below the second extension line E2. For example, as shown by arrows in Fig. 6, the low thermal conductive portions 60a, 60b, 60c, and 60d may be located obliquely from the first end surface 32 and the second end surface 33 of the heating conductor 30, respectively.

[0058] [Effects of the Second Embodiment] The sample support 2A according to the second embodiment may have, in a side cross-sectional view, a low thermal conductivity portion 60 having a lower thermal conductivity than the base 10 between adjacent heating conductors 30 and the cavity 50A. This reduces the heat conduction from one adjacent heating conductor 30 to the other. This reduces the influence of heat from adjacent heating conductors 30, thereby improving the accuracy of temperature control of the heating conductors 30. As a result, the temperature controllability of the upper surface 101 is improved, and the temperature of the wafer W can be made to reach the target temperature quickly.

[0059] Furthermore, by positioning the low thermal conductive portions 60a and 60b above the first extension line E1 and the low thermal conductive portions 60c and 60d below the second extension line E2, the thickness of the base 10 from the first end face 32 and the second end face 33 of the heating conductor 30 to the cavity 50A can be increased, thereby preventing cracks from occurring between the heating conductor 30 and the cavity 50A.

[0060] Furthermore, since the low thermal conductivity portions 60a, 60b, 60c, and 60d are positioned diagonally from the first end face 32 and the second end face 33 of the heating conductor 30, respectively, the flow of heat from one adjacent heating conductor 30 to the other can be reduced.

[0061] Furthermore, by evacuating the cavity 50A, the wafer W can be vacuum-sucked by utilizing the pressure difference between the rear surface pressure of the wafer W and the pressure inside the cavity 50A.

[0062] [Sample Support According to Third Embodiment] Next, a sample support according to a third embodiment will be described with reference to Fig. 7. Fig. 7 is a schematic cross-sectional view of the periphery of a cavity 50B in a sample support 2B according to the third embodiment. In the third embodiment, the system 1 has a sample support 2B instead of the sample support 2 according to the first embodiment.

[0063] Specifically, in the side cross-sectional view shown in FIG. 7 , the sample support 2B has a cavity 50B. The cavity 50B may be formed by a first wall surface 50c1, a second wall surface 50c2, a first side surface 50a, and a second side surface 50b. The cavity 50B may have a first corner A1, a second corner A2, a third corner A3, and a fourth corner A4. In the second embodiment, the low thermal conductive portions 60a, 60b, 60c, and 60d may be located corresponding to the first corner A1, the second corner A2, the third corner A3, and the fourth corner A4, respectively. The low thermal conductive portions 60a, 60b, 60c, and 60d may be located outside the area defined by the third virtual line L3, the fourth virtual line L4, the fifth virtual line L5, and the sixth virtual line L6. In a side cross-sectional view, the low thermal conductive portions 60a, 60b, 60c, and 60d may be positioned so as to be in contact with the third imaginary line L3, the fourth imaginary line L4, the fifth imaginary line L5, and the sixth imaginary line L6, respectively. The low thermal conductive portions 60a, 60b, 60c, and 60d may be positioned above and below the first end surface 32 and the second end surface 33 of the heating conductor 30, respectively.

[0064] The low thermal conductive portions 60a and 60b may be located between the first virtual line L1 and the first extension line E1, and the low thermal conductive portions 60c and 60d may be located between the second virtual line L2 and the second extension line E2.

[0065] [Effects of the Third Embodiment] The sample support 2B according to the third embodiment may have, in a side cross-sectional view, a low thermal conductivity portion 60 having a lower thermal conductivity than the base 10 between adjacent heating conductors 30 and the cavity 50B. This reduces the heat conduction from one adjacent heating conductor 30 to the other. This reduces the influence of heat from adjacent heating conductors 30, thereby improving the accuracy of temperature control of the heating conductors 30. As a result, the temperature controllability of the upper surface 101 is improved, and the temperature of the wafer W can be made to reach the target temperature quickly.

[0066] Furthermore, since the low thermal conductivity portions 60a and 60b are located above the first imaginary line L1 and the low thermal conductivity portions 60c and 60d are located below the second imaginary line L2, the thickness of the base 10 from the first end face 32 and the second end face 33 of the heating conductor 30 to the cavity 50B can be made thicker, thereby preventing cracks from occurring between the heating conductor 30 and the cavity 50B.

[0067] Furthermore, since the low thermal conductivity portions 60a, 60b, 60c, and 60d are positioned diagonally from the first end face 32 and the second end face 33 of the heating conductor 30, respectively, the flow of heat from one adjacent heating conductor 30 to the other can be reduced.

[0068] Furthermore, by evacuating the cavity 50B, the wafer W can be vacuum-sucked by utilizing the pressure difference between the rear surface pressure of the wafer W and the pressure inside the cavity 50B.

[0069] [Sample Support According to Fourth Embodiment] Next, a sample support according to a fourth embodiment will be described with reference to Fig. 8 and Fig. 9. Fig. 8 is a schematic cross-sectional view of a sample support 2C according to the fourth embodiment. Fig. 9 is a schematic cross-sectional view taken along the line IV-IV in Fig. 8.

[0070] In the side cross-sectional view shown in Fig. 8 and the plan cross-sectional view shown in Fig. 9, the sample support 2C according to the fourth embodiment has a cavity 50C. The cavity 50C may include a cavity 50 and a cavity 50c. The cavity 50 may be located on the inner circumferential side of the outer circumferential virtual line LU. The cavity 50c may be located on the outer circumferential side of the outer circumferential virtual line LU. As shown in Fig. 9, the cavity 50 may be located between adjacent heating conductors 30. The cavity 50 is the same as the cavity 50 described in the first embodiment except for the fact that it is connected to the cavity 50c, and therefore a duplicated description will be omitted.

[0071] As illustrated in Figures 8 and 9, the cavity 50c is located along the outermost heating conductor 30 and closer to the outer periphery than the outermost heating conductor 30. In other words, the cavity 50c is located between the side surface 103 of the base 10 and the outermost heating conductor 30. Therefore, as illustrated in Figure 9, the cavity 50c surrounds the outermost periphery of the heating conductor 30. The cavity 50c and the cavity 50 are connected at a connecting portion 50c3. The cavity 50 and the low thermal conductivity portions 60a, 60b, 60c, and 60d may be located at predetermined intervals along the inner and outer peripheries of the heating conductor 30 and surround the heating conductor 30 in a direction perpendicular to the top surface 101 in a side cross-sectional view.

[0072] 8, the hollow portion 50c may have, in a side cross-sectional view, a first side surface 50e located on the side surface 103 side of the base 10 and a second side surface 50f facing the first side surface 50e. In this case, the first side surface 50e and the second side surface 50f are surfaces extending in a direction perpendicular to the upper surface 101.

[0073] The sample support 2C has low thermal conductivity portions 60e and 60f having a thermal conductivity lower than that of the base 10, in addition to the low thermal conductivity portions 60a, 60b, 60c, and 60d. The low thermal conductivity portions 60e and 60f are located inside the base 10. In the side cross-sectional view shown in FIG. 8 , at least a portion of the low thermal conductivity portions 60a, 60b, 60c, and 60d may be located between adjacent heating conductors 30 and the cavity 50. Also, at least a portion of the low thermal conductivity portions 60e and 60f may be located between the outermost heating conductor 30 and the cavity 50. In the example shown in FIG. 8 , in the side cross-sectional view, the low thermal conductivity portions 60a and 60c may be located between one of the adjacent heating conductors 30 and the cavity 50. Also, in the side cross-sectional view, the low thermal conductivity portions 60b and 60d may be located between the other adjacent heating conductor 30 and the cavity 50. Furthermore, in the example of Figure 8, in a side cross-sectional view, the low thermal conductivity portions 60e, 60f are located between the outer peripheral end 31 of the outermost heating conductor 30 and the cavity portion 50c, but further low thermal conductivity portions may be located between the side surface 103 of the base 10 and the cavity portion 50c.

[0074] [Effects of the Fourth Embodiment] The sample support 2C according to the fourth embodiment has a cavity 50C. The cavity 50C may include a cavity 50 and a cavity 50c. In a side cross-sectional view, the sample support 2A may have a low thermal conductivity portion 60 between the adjacent heating conductors 30 and the cavity 50C, the low thermal conductivity portion 60 having a lower thermal conductivity than the substrate 10. This reduces the heat conduction from one adjacent heating conductor 30 to the other. This reduces the influence of heat from the adjacent heating conductors 30, thereby improving the accuracy of temperature control of the heating conductors 30. As a result, the temperature controllability of the upper surface 101 is improved, and the temperature of the wafer W can be quickly brought to a target temperature.

[0075] Furthermore, by locating the hollow portion 50c and the low thermal conductivity portions 60e and 60f between the outermost heating conductor 30 and the side surface 103 of the base 10, it is possible to suppress heat conduction to the side surface 103 of the base 10, which does not need to be heated. This improves thermal efficiency. As a result, it is possible to reduce heat conduction to areas that contribute little to heat conduction to the wafer W, while also reducing the influence of heat from adjacent heating conductors 30, thereby improving the accuracy of temperature control of the heating conductor 30. As a result, it is possible to improve the temperature controllability of the upper surface 101 and more efficiently bring the temperature of the wafer W to a target temperature.

[0076] The cavity 50 is an example of a first cavity located between adjacent heating conductors 30. The cavity 50c is an example of a second cavity located between the heating conductor 30 and the side surface 103 of the base 10. The cavity 50 and the cavity 50c are connected. This allows the wafer W to be vacuum-sucked by evacuating the cavity 50C, which includes the cavity 50 and the cavity 50c, using the pressure difference between the backside pressure of the wafer W and the pressure inside the cavity 50C. The cavity 50 may have only one opening. This also allows heat to be transferred inside the cavity 50. This reduces heat conduction from one adjacent heating conductor 30 to the other.

[0077] [Method for Manufacturing Sample Support] Next, an example of a method for manufacturing the sample support 2 according to the present disclosure will be described. In one example of the method for manufacturing the sample support 2, a plurality of ceramic green sheets having spaces that will become the cavity 50 and the low thermal conductive portion 60 are prepared, and the plurality of ceramic green sheets are stacked so as to form the spaces that will become the cavity 50 and the low thermal conductive portion 60. In addition, a metal sheet that will become the heating conductor 30 is incorporated into the stack of ceramic green sheets so as to be adjacent to the stack with the space that will become the cavity 50 sandwiched therebetween.

[0078] The base 10 may be formed by stacking multiple ceramic green sheets. Specifically, ceramic green sheets constituting the base 10 and metal sheets constituting the heating conductors 30 are prepared. The prepared sheets are then stacked. Multiple types of ceramic green sheets are prepared, each having a space for forming the cavity 50 and / or the low thermal conductive portion 60. For example, as shown in FIG. 3 , when forming the cavity 50 and the low thermal conductive portion 60 in the base 10, which are spiral-shaped in cross-section, a first ceramic green sheet having a circular shape and approximately the same diameter as the upper surface 101 of the base 10 is prepared. Furthermore, multiple second ceramic green sheets having a circular shape and approximately the same diameter as the upper surface 101 of the base 10 and spaces for the cavity 50 and / or the low thermal conductive portion 60 are prepared. The multiple second ceramic green sheets are then stacked on the first ceramic green sheets. The multiple second ceramic green sheets are stacked so as to form the cavity 50 and / or the low thermal conductive portion 60. Furthermore, a metal sheet that will become the heating conductor 30 is incorporated into the laminate of ceramic green sheets so as to be adjacent to the laminate with a space that will become the cavity 50 sandwiched therebetween. Then, a first ceramic green sheet is laminated on a plurality of second ceramic green sheets.

[0079] Next, the laminate of the ceramic green sheets and the metal sheets is degreased and fired. The firing temperature may be set appropriately depending on the main components of the ceramic green sheets and the metal sheets, but is, for example, a temperature of 1700°C or higher and 1850°C or lower. If the cavity 50 and the low thermal conductive portion 60 are closed spaces, the firing atmosphere can be made vacuum during firing, thereby discharging gas through the communicating holes in the ceramic green sheets that were created during degreasing, and the cavity 50 and the low thermal conductive portion 60 can be made vacuum. Furthermore, metal paste or wire may be used instead of the metal sheets.

[0080] Thereafter, holes for inserting terminals are formed in the fired laminate by, for example, drilling, and the terminals are inserted into the formed holes to bond the terminals to the laminate via a bonding layer. The bonding layer can be, for example, a metallized layer using an Ag-Ti-Cu alloy. The bonding layer may be formed by sintering a paste of conductive material, such as platinum, through heat treatment. In this case, the tips of the terminals are pre-applied with a paste of conductive material, such as platinum. The laminate with the attached terminals is then heat-treated in a vacuum to sinter the conductive material. The treatment temperature can be set appropriately depending on the main component of the bonding layer, but is, for example, 1250°C. This results in the base 10 of the present disclosure.

[0081] Further advantages and modifications will readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

[0082] An example of the size of each part in the sample support 2 will be described with reference to FIG. 5. The direction perpendicular to the upper surface 101 is referred to as the vertical direction, and the direction perpendicular to this vertical direction is referred to as the horizontal direction. The vertical width of the first wall surface 50c1 and the second wall surface 50c2 is 1 mm to 3 mm. The horizontal width of the first side surface 50a and the second side surface 50b is 1 mm to 10 mm. The vertical width of the upper and lower surfaces of the heating conductor 30 is 10 μm to 200 μm. The horizontal width of the first side surface 50a or the second side surface 50b and the opposing end of the heating conductor 30 is 500 μm to 2 mm.

[0083] The present technology can take the following configurations: (1) A sample support comprising: a base made of ceramics and having a first surface that is a support surface for a sample and a second surface that is the surface opposite to the first surface; heating conductors located within the base at intervals in a cross-sectional view of the base in a direction perpendicular to the first surface; a cavity located within the base, at least a portion of which is located between adjacent heating conductors in the cross-sectional view; and one or more low thermal conductive portions having a thermal conductivity lower than that of the base, at least a portion of which is located between adjacent heating conductors and the cavity in the cross-sectional view. (2) The sample support according to (1), wherein the sample support has a plurality of the low thermal conductive portions, and the plurality of low thermal conductive portions are located above a first imaginary line including upper surfaces of adjacent heating conductors and below a second imaginary line including lower surfaces of adjacent heating conductors in the cross-sectional view. (3) The sample support according to (2), wherein, in the cross-sectional view, the cavity has a first wall surface that is a bottom surface of the cavity and a second wall surface that is located opposite the first wall surface and is a ceiling surface of the cavity, and the plurality of low thermal conductivity portions are located between the first virtual line and a first extension line including the second wall surface, and between the second virtual line and a second extension line including the first wall surface. (4) The sample support according to (1) or (2), wherein, in the cross-sectional view, the cavity has a first wall surface that is a bottom surface of the cavity and a second wall surface that is located opposite the first wall surface and is a ceiling surface of the cavity, and the plurality of low thermal conductivity portions are located above the first extension line including the second wall surface and below the second extension line including the first wall surface.(5) The base has a side surface connecting the first surface and the second surface, the cavity has, in the cross-sectional view, a first wall surface which is a bottom surface of the cavity, and a second wall surface which is located opposite the first wall surface and is a ceiling surface of the cavity, the cavity has, in the cross-sectional view, a first side surface which is located on a side surface of the base, and a second side surface which is opposite the first side surface, the cavity has a first corner where the second wall surface and the first side surface meet, a second corner where the second wall surface and the second side surface meet, a third corner where the first wall surface and the first side surface meet, and a fourth corner where the first wall surface and the second side surface meet, the sample support has a plurality of the low thermal conductivity portions, The sample support according to any one of (1) to (3), wherein the plurality of low thermal conductivity portions are located corresponding to the first corner, the second corner, the third corner, and the fourth corner, respectively, and are located so as to straddle, in the cross-sectional view, a third imaginary line connecting the first corner and a first end face of the heating conductor adjacent to the first side face, a fourth imaginary line connecting the second corner and a second end face of the heating conductor adjacent to the second side face, a fifth imaginary line connecting the third corner and the first end face, and a sixth imaginary line connecting the fourth corner and the second end face.(6) The base has a side surface connecting the first surface and the second surface, the cavity has, in the cross-sectional view, a first wall surface which is a bottom surface of the cavity, and a second wall surface which is located opposite the first wall surface and is a ceiling surface of the cavity, the cavity has, in the cross-sectional view, a first side surface which is located on a side surface of the base, and a second side surface which is opposite the first side surface, the cavity has a first corner where the second wall surface and the first side surface meet, a second corner where the second wall surface and the second side surface meet, a third corner where the first wall surface and the first side surface meet, and a fourth corner where the first wall surface and the second side surface meet, the sample support has a plurality of the low thermal conductivity portions, The sample support according to any one of (1) to (4), wherein the plurality of low thermal conductivity portions are located corresponding to the first corner, the second corner, the third corner, and the fourth corner, respectively, and are located outside an area defined, in the cross-sectional view, by a third imaginary line connecting the first corner and a first end face of the heating conductor adjacent to the first side face, a fourth imaginary line connecting the second corner and a second end face of the heating conductor adjacent to the second side face, a fifth imaginary line connecting the third corner and the first end face, and a sixth imaginary line connecting the fourth corner and the second end face. (7) The sample support according to any one of (1) to (6), wherein the low thermal conductivity portions are, in the cross-sectional view, axisymmetric with respect to a central axis of the hollow portion. (8) The sample support according to any one of (1) to (7), wherein the interior of the low thermal conductivity portion is hollow. (9) The sample support according to any one of (1) to (8), wherein the cavity is a flow path, and has: a first opening communicating with the flow path and located on the first surface; and a second opening communicating with the flow path and located on the second surface or a side surface of the base. (10) The sample support according to any one of (1) to (9), wherein the cavity has: a first cavity located between adjacent ones of the heating conductors; and a second cavity located between the heating conductor and the side surface of the base, and the first cavity and the second cavity are connected to each other.

[0084] 1: System 2, 2A, 2B, 2C: Sample support 10: Base 30: Heating conductor 50, 50A, 50B, 50C: Cavity 50a, 50e: First side surface 50b, 50f: Second side surface 50c1: First wall surface 50c2: Second wall surface 53: First opening 54: Second opening 60: Low thermal conductivity portion 101: Upper surface 102: Lower surface 103: Side surface E1: First extension line E2: Second extension line L0: Central axis L1: First virtual line L2: Second virtual line L3: Third virtual line L4: Fourth virtual line L5: Fifth virtual line L6: Sixth virtual line W: Wafer

Claims

1. A sample support comprising: a base made of ceramics and having a first surface that is a support surface for a sample and a second surface that is the surface opposite to the first surface; heating conductors located within the base at intervals in a cross-sectional view of the base in a direction perpendicular to the first surface; a cavity located within the base, at least a portion of which is located between adjacent heating conductors in the cross-sectional view; and one or more low thermal conductivity parts that have a thermal conductivity lower than that of the base, at least a portion of which is located between adjacent heating conductors and the cavity in the cross-sectional view.

2. The sample support according to claim 1, wherein the sample support has a plurality of the low thermal conductivity portions, and the plurality of low thermal conductivity portions are located, in the cross-sectional view, above a first imaginary line including the upper surfaces of the adjacent heating conductors and below a second imaginary line including the lower surfaces of the adjacent heating conductors.

3. A sample support as described in claim 2, wherein the cavity has, in the cross-sectional view, a first wall surface which is the bottom surface of the cavity, and a second wall surface which is located opposite the first wall surface and is the ceiling surface of the cavity, and the plurality of low thermal conductivity portions are located between the first virtual line and a first extension line which includes the second wall surface, and between the second virtual line and a second extension line which includes the first wall surface.

4. A sample support as described in claim 1 or 2, wherein the cavity has, in the cross-sectional view, a first wall surface which is the bottom surface of the cavity, and a second wall surface which is located opposite the first wall surface and is the ceiling surface of the cavity, and the sample support has a plurality of the low thermal conductivity parts, and the plurality of the low thermal conductivity parts are located above a first extension line which includes the second wall surface and below a second extension line which includes the first wall surface.

5. The base has a side surface connecting the first surface and the second surface, the cavity has, in the cross-sectional view, a first wall surface which is the bottom surface of the cavity, and a second wall surface which is located opposite the first wall surface and is the ceiling surface of the cavity, the cavity has, in the cross-sectional view, a first side surface which is located on the side surface of the base, and a second side surface which is opposite the first side surface, the cavity has a first corner where the second wall surface and the first side surface meet, a second corner where the second wall surface and the second side surface meet, a third corner where the first wall surface and the first side surface meet, and a fourth corner where the first wall surface and the second side surface meet, the sample support has a plurality of the low thermal conductivity portions, The sample support according to any one of claims 1 to 3, wherein the plurality of low thermal conductivity portions are located corresponding to the first corner, the second corner, the third corner, and the fourth corner, respectively, and are located so as to straddle, in the cross-sectional view, a third imaginary line connecting the first corner and a first end face of the heating conductor adjacent to the first side face, a fourth imaginary line connecting the second corner and a second end face of the heating conductor adjacent to the second side face, a fifth imaginary line connecting the third corner and the first end face, and a sixth imaginary line connecting the fourth corner and the second end face.

6. The base has a side surface connecting the first surface and the second surface, the cavity has, in the cross-sectional view, a first wall surface which is the bottom surface of the cavity, and a second wall surface which is located opposite the first wall surface and is the ceiling surface of the cavity, the cavity has, in the cross-sectional view, a first side surface which is located on the side surface of the base, and a second side surface which is opposite the first side surface, the cavity has a first corner where the second wall surface and the first side surface meet, a second corner where the second wall surface and the second side surface meet, a third corner where the first wall surface and the first side surface meet, and a fourth corner where the first wall surface and the second side surface meet, the sample support has a plurality of the low thermal conductivity portions, 5. The sample support according to claim 1, wherein the plurality of low thermal conductivity portions are located corresponding to the first corner, the second corner, the third corner, and the fourth corner, respectively, and are located outside an area defined in the cross-sectional view by a third imaginary line connecting the first corner and a first end face of the heating conductor adjacent to the first side face, a fourth imaginary line connecting the second corner and a second end face of the heating conductor adjacent to the second side face, a fifth imaginary line connecting the third corner and the first end face, and a sixth imaginary line connecting the fourth corner and the second end face.

7. A sample support according to any one of claims 1 to 6, wherein the low thermal conductivity portion is symmetrical with respect to the central axis of the cavity portion in the cross-sectional view.

8. A sample support according to any one of claims 1 to 7, wherein the interior of the low thermal conductivity portion is hollow.

9. A sample support according to any one of claims 1 to 8, wherein the cavity is a flow path, and has: a first opening communicating with the flow path and located on the first surface; and a second opening communicating with the flow path and located on the second surface or a side surface of the base.

10. A sample support according to any one of claims 1 to 9, wherein the cavity comprises a first cavity located between adjacent heating conductors, and a second cavity located between the heating conductor and a side surface of the base, and the first cavity and the second cavity are connected to each other.

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