Polyhedral thin-film force-sensitive element and manufacturing method therefor

Abstract

The present invention relates to the technical field of force-sensitive elements, and in particular to a polyhedral thin-film force-sensitive element and a manufacturing method therefor, for use in achieving structural simplification, weight reduction, small assembly error, and excellent dynamic, temperature and creep characteristics of a sensor. The polyhedral thin-film force-sensitive element of the present invention comprises an elastomer substrate, a transition film, an insulating film, and a metal strain-resistive film, wherein the transition film is located on the elastomer substrate, the insulating film is located on the transition film, the metal strain-resistive film is located on the insulating film, and electrode films are located in pad areas of the strain-resistive film. In a measurement process of a multi-dimensional force sensor, the element achieves simple structure, light weight, small assembly error, and excellent temperature and creep characteristics of the sensor, and provides production assurance for miniaturization and high-precision multi-dimensional force testing in the fields of aerospace and industrial robotics.

Description

Polyhedral thin film force sensing element and preparation method thereof TECHNICAL FIELD

[0001] The present application relates to the technical field of force sensing element, in particular to a polyhedral thin film force sensing element and a preparation method thereof. BACKGROUND

[0002] When the mechanical arm is used for cabin segment transposition, hovering aircraft capture and auxiliary docking, extravehicular cargo handling, supporting astronaut extravehicular activity, supporting extravehicular state inspection, supporting extravehicular large equipment maintenance replacement and other tasks, the stress condition of the mechanical arm needs to be monitored, and coping strategies are executed according to the stress condition if necessary. The stress measuring device of the mechanical arm is realized by using a six-dimensional force sensor, which is responsible for real-time monitoring of the stress condition of the mechanical arm and serves as a reference for motion planning. The force sensing element of such a multi-dimensional working condition measuring force sensor is divided into combined and integrated types according to structure, and is divided into patch type and thin film type according to preparation process, but the combined and patch types will bring assembly errors, poor dynamic characteristics, creep and temperature characteristics in measurement. SUMMARY

[0003] Therefore, the present application provides a polyhedral thin film force sensing element and a preparation method thereof, which can simplify the structure and reduce the weight, and has small assembly error, good sensor dynamic characteristics, temperature characteristics and creep characteristics.

[0004] To achieve the above-mentioned purpose, the technical scheme of the present application is as follows:

[0005] The polyhedral thin film force sensing element of the present application comprises an elastomer substrate, a transition film, an insulating film, a metal strain resistance film and an electrode film. The transition film is located above the elastomer substrate, the insulating film is located above the transition film, the metal strain resistance film is located above the insulating film, and the electrode film is located in the pad area of the strain resistance film.

[0006] Among them, the ion beam sputtering and chemical vapor deposition method is used to form an integrated element between each film layer.

[0007] Among them, the material of the elastomer substrate is stainless steel or titanium; the material of the transition film is Ti or Cr; the material of the insulating layer is silicon nitride or SiO2; the material of the metal strain resistance film is NiCr; and the material of the electrode film is Ni.

[0008] The present application further provides a preparation method of the polyhedral thin film force sensing element, comprising the following steps:

[0009] Before the thin film deposition, the elastomer substrate is first subjected to surface treatment, and then the transition film deposition is carried out; after the transition film deposition is completed, the deposition of the insulating film is carried out on the surface of the transition film; wherein the surface treatment of the elastomer substrate is carried out in the order of the plane first and then the side surface, and the surface roughness of each surface after the surface treatment is less than 10nm; the transition film deposition is carried out in the order of the plane first and then the side surface;

[0010] After the deposition of the insulating film is completed, the strain metal resistance film is deposited on the upper layer of the insulating film by using the ion beam sputtering method, and the deposition of the strain metal resistance film is completed in the order of the plane first and then the side surface;

[0011] After the deposition of the strain metal resistance film is completed, the strain resistance film is subjected to patterning treatment by using the semiconductor photoetching process;

[0012] Finally, the electrode film is arranged on the pad area of the strain metal resistance film, and the preparation is completed.

[0013] Among them, the transition film deposition is carried out by using the ion beam sputtering process.

[0014] Among them, the deposition of the insulating film in the plane direction of the elastomer substrate is carried out by using the plasma chemical vapor deposition method; the deposition of the insulating film in the side surface direction of the elastomer substrate is carried out by using the ion beam sputtering method. Advantages:

[0015] 1. The polyhedral thin film force sensitive element of the application comprises an elastomer substrate, a transition film, an insulating film and a metal strain resistance film; wherein the transition film is located above the elastomer substrate, the insulating film is located above the transition film, the metal strain resistance film is located above the insulating film, and the electrode film is located in the pad area of the strain resistance film. The element realizes the characteristics of simple structure, light self-weight, small assembly error, good sensor temperature characteristics and creep characteristics in the measurement process of the multi-dimensional force sensor, and provides production guarantee for the miniaturization and high-precision multi-dimensional force test in the fields of spaceflight and industrial robots.

[0016] 2. In the integrated thin film force sensitive element of the application, the ion beam sputtering and chemical vapor deposition method are used between each film layer, the sputtering process is used to realize the multi-film coating, the multi-dimensional force integrated mechanical quantity test can be realized, the assembly error caused by the test of the traditional multi-dimensional force combined single-film force sensitive element is eliminated, and the dynamic characteristics and temperature characteristics of the sensor are improved.

[0017] 3. In the preparation method of the polyhedral thin film force sensitive element of the application, through the integration of each process and the strict sequence requirement, the integrated multi-film sputtering thin film force sensitive element is used, the multi-dimensional force integrated mechanical quantity test can be realized, the assembly error caused by the test of the traditional multi-dimensional force combined single-film force sensitive element is eliminated, and the dynamic characteristics and temperature characteristics of the sensor are improved.

[0018] 4. In the polyhedral thin film force sensing element preparation method of the present application, the transition film deposition of the elastomer substrate is also sequentially performed in the order of plane first and side surface second, and the transition film deposition is performed by using the ion beam sputtering process method; the deposition of the insulating film is performed on the upper surface of the transition film, the deposition of the insulating film in the plane direction of the elastomer substrate is performed by using the plasma chemical vapor deposition method, and the deposition of the insulating film in the side surface direction is performed by using the ion beam sputtering method; after the deposition of the insulating film is completed, the deposition of the strain metal resistance film is performed on the upper layer of the insulating film by using the ion beam sputtering method, and the deposition of the strain metal resistance film is also sequentially completed in the order of plane first and side surface second; after the deposition of the strain metal resistance film is completed, the patterned processing of the strain resistance film is performed by using the semiconductor photoetching process, and all are mature process means, which are convenient for popularization. BRIEF DESCRIPTION OF DRAWINGS

[0019] Fig. 1 is a film system structure diagram of the force sensing element of the embodiment of the present application.

[0020] Fig. 2 is an elastomer structure diagram of the embodiment of the present application.

[0021] Fig. 3 is an elastomer plane structure diagram of the embodiment of the present application.

[0022] Fig. 4 is an elastomer side surface structure diagram of the embodiment of the present application.

[0023] Among them, 1-elastomer substrate; 2-transition film; 3-insulating film; 4-strain metal resistance; 5-electrode film. DETAILED DESCRIPTION

[0024] The present application will be described in detail below with reference to the drawings and examples.

[0025] The present application provides a kind of polyhedral thin film force sensing element, film system structure as shown in Figure 1, including elastomer substrate 1, transition film 2, insulating film 3, strain metal resistance film 4 and electrode film 5;Wherein, transition film 2 is located above elastomer substrate 1, insulating film 3 is located above transition film 2, metal strain resistance film 4 is located above insulating film 3, electrode film 5 is located in strain resistance film 4 pad area, each film layer is integrated element using ion beam sputtering and chemical vapor deposition method between it.Formation.Due to the process method of ion beam sputtering and plasma chemical deposition is combined, realizes multi-film preparation and resistance pattern photoetching on one elastomer, replaces one product multi-facet integrated test with traditional single surface multi-product test function.Therefore, the advantages of simple structure, light weight, small assembly error, good sensor temperature characteristics and creep characteristics are realized.

[0026] Further, the elastomer substrate 1 material can be stainless steel or titanium; the transition film 2 material can be Ti or Cr; the insulating layer 3 material can be silicon nitride or SiO2; in this embodiment, the metal strain resistance film 4 material is NiCr; and the electrode film 5 material is Ni.

[0027] The present application also provides a preparation method of the polyhedral thin film force sensing element, for preparing the polyhedral thin film force sensing element of the present application, and the specific steps are as follows:

[0028] Before thin film deposition, the elastomer substrate 1 is first subjected to surface treatment, and then the transition film 2 is deposited; wherein the surface treatment of the elastomer substrate 1 is sequentially performed on multiple surfaces in the order of first plane (Fig. 3) and then side (Fig. 4), and the surface roughness of each surface after surface treatment meets the requirement of less than 10 nm; according to the process sequence of first plane and then side for subsequent film deposition, the plane is deposited with an insulating film by plasma chemical vapor deposition, the film deposition process involves high temperature of 300°C, the side is deposited with an insulating film by ion beam sputtering at normal temperature, and the selection of the film deposition protection device is not affected by the sequence of high temperature and normal temperature; the elastomer needs to be subjected to surface treatment before thin film deposition, so as to achieve a certain degree of smoothness of the surface and to enable the subsequently deposited thin film to have certain adhesion and form a continuous thin film structure. In this embodiment, the transition film 2 is deposited by the process method of ion beam sputtering, and the deposition of the transition film 2 is also sequentially performed in the order of first plane and then side.

[0029] After the deposition of the transition film 2 is completed, the deposition of the insulating film 3 is performed on the surface of the transition film; wherein the deposition of the insulating film on the plane direction of the elastomer substrate 1 is realized by the method of plasma chemical vapor deposition; and the deposition of the insulating film 3 on the side direction of the elastomer substrate 1 is realized by the method of ion beam sputtering. The present application adopts different insulating film preparation process methods according to the special structure of the elastomer and the feasibility of the equipment, and the conclusion is comprehensively derived from the special structure of the elastomer and the feasibility of the equipment; the plane height of the elastomer meets the preparation conditions of the insulating film equipment, so plasma chemical vapor deposition is selected; and when the side is deposited with an insulating film, the plasma equipment does not meet the production conditions, so the ion beam sputtering equipment that meets the production conditions is selected to realize the preparation of the side insulating film.

[0030] After the deposition of the insulating film 3 is completed, the strain metal resistance film 4 is deposited on the upper layer of the insulating film 3 by the method of ion beam sputtering, and the deposition of the strain metal resistance film 4 is also completed in the order of first plane and then side.

[0031] After the deposition of the strain metal resistance film 4 is completed, the strain resistance film is subjected to patterning treatment by the semiconductor photolithography process, wherein the resistance film can be made into other shapes, and the size thereof can also be changed, which depends on the final designed product.

[0032] Finally, the electrode film 5 is arranged on the pad area of the strain metal resistance film 4, and the preparation is completed.

[0033] To sum up, the above is only the preferred embodiment of the present application, not for limiting the scope of protection of the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the scope of protection of the present application.

Claims

1. A polyhedral thin film force sensor, characterized by, The elastic base material, transition film, insulating film, strain metal resistance film and electrode film; wherein the transition film is above the elastic base material, the insulating film is above the transition film, the strain metal resistance film is above the insulating film, and the electrode film is above the strain resistance film pad area.

2. The polyhedral thin-film force sensor of claim 1, wherein The ion beam sputtering and chemical vapor deposition method are used to form an integrated element between each film layer.

3. The polyhedral thin-film force sensor according to claim 1 or 2, wherein The elastic base material is stainless steel or titanium; the transition film material is Ti or Cr; the insulating layer material is silicon nitride or SiO2; the metal strain resistance film material is NiCr; and the electrode film material is Ni.

4. A method of manufacturing a polyhedral thin film force sensor, characterized by, The method comprises the following steps: Before the film deposition, the elastic base material is first subjected to surface treatment, and then the transition film deposition is performed; after the transition film deposition is completed, the insulating film deposition is performed on the upper surface of the transition film; wherein the surface treatment of the elastic base material is performed on multiple surfaces in the order of plane first and then side surface; the surface roughness of each surface after the surface treatment is less than 10 nm; and the transition film deposition is performed in the order of plane first and then side surface; After the insulating film deposition is completed, the strain metal resistance film is deposited on the upper layer of the insulating film by using the ion beam sputtering method; and the deposition of the strain metal resistance film is completed in the order of plane first and then side surface; After the strain metal resistance film deposition is completed, the strain resistance film is subjected to patterning treatment by using the semiconductor photoetching process; Finally, the electrode film is arranged on the pad area of the strain metal resistance film to complete the preparation.

5. The production method according to claim 4, wherein The transition film deposition is performed by using the ion beam sputtering method.

6. The production method according to claim 4 or 5, characterized by, The insulating film deposition in the plane direction of the elastic base material is performed by using the plasma chemical vapor deposition method; and the insulating film deposition in the side surface direction of the elastic base material is performed by using the ion beam sputtering method.

Images