Silicon electrode plate for plasma processing apparatus and method for manufacturing same

Abstract

Disclosed is a silicon electrode plate for a plasma processing apparatus, the silicon electrode plate being characterized by having a plurality of slit-shaped gas flow paths (11) that penetrate the silicon electrode plate from a first surface (301) to a second surface (302), which is positioned on the reverse side of the first surface (301), in the plate thickness direction (D1) in each of a plate center part, an outer peripheral part, and an intermediate part of the silicon electrode plate. This silicon electrode plate for a plasma processing apparatus is also characterized in that: the gas flow paths (11) are each formed so that the aspect ratio, which is obtained by dividing, by the slit width (A), the depth (C) from an inlet (111) in the first surface (301) to an outlet (112) in the second surface (302) is 10 or more and 80 or less; and the average value n1 of the total number of chippings, which are formed on the linear long edges and the arc-shaped short edges of the inlet (111) and the outlet (112) of one gas flow path (11) and have a width of 0.1 mm or more, is three or less (n1 ≤ 3).

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