Thin film deposition device and deposition method

Abstract

Disclosed in the present invention are a thin film deposition device and a deposition method, relating to the technical field of semiconductors. The thin film deposition device comprises an ALD main body, a hafnium source filter, and a hafnium source pipe. Two ends of the hafnium source filter are respectively connected to the ALD main body and the hafnium source pipe; the ALD main body has a deposition chamber, and the hafnium source pipe is in communication with the deposition chamber via the hafnium source filter; and the hafnium source pipe is used for introducing hafnium(IV) chloride gas into the deposition chamber, and the hafnium source filter is used for filtering hafnium(IV) chloride particles from the hafnium(IV) chloride gas. The thin film deposition device provided in the present invention can significantly improve the deposition quality of a hafnium(IV) oxide thin film.

Description

Thin film deposition apparatus and deposition method

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] The present application claims priority to the Chinese Patent Application No. 2024107051493, filed on May 31, 2024, entitled "A Thin Film Deposition Apparatus and Deposition Method", and the Chinese Patent Application No. 202410977147.X, filed on July 19, 2024, entitled "A Thin Film Deposition Apparatus and Deposition Method", the contents of which are incorporated herein by reference in their entirety. TECHNICAL FIELD

[0003] The present application relates to the technical field of semiconductor technology, in particular to a thin film deposition apparatus and deposition method. BACKGROUND

[0004] In the field of semiconductor, with the continuous reduction of the size of semiconductor devices, the semiconductor manufacturing process has entered the deep submicron era and is developing towards ultra-deep submicron. However, with the continuous improvement of the density of integrated circuits, higher requirements are put forward for the performance and stability of semiconductor devices. The flatness of the thin film formed in the process of manufacturing semiconductor devices has a very important influence on the performance of the subsequently formed semiconductor devices.

[0005] The ALD (Atomic Layer Deposition) deposition method adopted by the prior art can obtain a thin film with an atomic-level flat surface. ALD is a method of depositing thin films layer by layer in the form of single atoms, and only one layer of atoms is deposited each time. The deposited thin film has large-area uniformity and can realize high-quality thin film growth. However, when it comes to the growth of thin films of certain materials, such as hafnium dioxide thin films, the surface flatness and surface quality of the thin film still need to be improved. SUMMARY

[0006] The purpose of the present application is to provide a thin film deposition apparatus that can significantly improve the deposition quality of hafnium dioxide thin films.

[0007] Another purpose of the present application is to provide a hafnium dioxide thin film deposition method that can significantly improve the deposition quality of hafnium dioxide thin films.

[0008] Embodiments of the present application provide a technical solution:

[0009] A thin film deposition apparatus includes an ALD main body, a hafnium source filter, and a hafnium source pipeline, two ends of the hafnium source filter being connected with the ALD main body and the hafnium source pipeline respectively; the ALD main body has a deposition chamber, the hafnium source pipeline is communicated with the deposition chamber through the hafnium source filter, the hafnium source pipeline is used for introducing tetrachlorohafnium gas into the deposition chamber, and the hafnium source filter is used for filtering tetrachlorohafnium particles in the tetrachlorohafnium gas.

[0010] In an optional embodiment, the hafnium source filter includes a shell and a filter core, the shell has a filter cavity, and the filter core is accommodated in the filter cavity; the shell is provided with a first joint and a second joint, the first joint is connected with the ALD main body, the second joint is connected with the hafnium source pipeline, and the first joint is communicated with the second joint through the filter cavity.

[0011] In an optional embodiment, the filter core divides the filter cavity into a first chamber and a second chamber, the first chamber is communicated with the first joint, and the cross-sectional diameter of the first chamber is greater than the cross-sectional diameter of the first joint; the second chamber is communicated with the second joint, and the cross-sectional diameter of the second chamber is greater than the cross-sectional diameter of the second joint.

[0012] In an optional embodiment, the shell is 316L stainless steel subjected to electrolytic polishing.

[0013] In an optional embodiment, the filter core is formed of 316L stainless steel and / or nickel.

[0014] In an optional embodiment, the filter core has filter pores with a diameter between 2.9 nm and 3.1 nm.

[0015] In an optional embodiment, the hafnium source pipeline is respectively provided with a first gas source valve and a second gas source valve, the first gas source valve is used for selectively introducing inert gas into the hafnium source pipeline, and the second gas source valve is used for selectively introducing tetrachlorohafnium gas into the hafnium source pipeline.

[0016] In an optional embodiment, the thin film deposition apparatus further includes a controller and a pressure detection member, the pressure detection member is used for detecting the pressure in the hafnium source pipeline, the controller is respectively communicatively connected with the pressure detection member, the first gas source valve, and the second gas source valve, and is used for controlling the first gas source valve to be opened and the second gas source valve to be closed when the pressure detection member detects that the pressure in the hafnium source pipeline is greater than or equal to a pressure threshold value.

[0017] In an optional embodiment, the hafnium source filter has a heating module, the heating module is connected with the controller in communication, and the controller is further configured to control the heating module to heat the hafnium tetrachloride particles in the filtering cavity when the pressure in the hafnium source pipeline is greater than or equal to the pressure threshold.

[0018] The application further provides a hafnium dioxide thin film deposition method applied to the thin film deposition device. The thin film deposition device includes an ALD main body, a hafnium source filter, and a hafnium source pipeline. The two ends of the hafnium source filter are connected with the ALD main body and the hafnium source pipeline respectively. The ALD main body has a deposition cavity. The hafnium source pipeline is connected with the deposition cavity through the hafnium source filter. The hafnium source pipeline is configured to pass hafnium tetrachloride gas into the deposition cavity. The hafnium source filter is configured to filter hafnium tetrachloride particles in the hafnium tetrachloride gas. The hafnium dioxide thin film deposition method includes: controlling the hafnium source pipeline to deliver hafnium tetrachloride gas and inert gas to the deposition cavity during a deposition process, and acquiring the pressure in the hafnium source pipeline in real time; and when the pressure in the hafnium source pipeline is greater than or equal to a pressure threshold, controlling the hafnium source pipeline to stop delivering hafnium tetrachloride gas, increasing the delivery flow rate of the inert gas, and controlling the hafnium source filter to start the heating function.

[0019] Compared with the prior art, the thin film deposition device provided by the application has the hafnium source filter arranged between the ALD main body and the hafnium source pipeline. During the process of passing hafnium tetrachloride gas into the deposition cavity of the ALD main body through the hafnium source pipeline, the hafnium source filter can filter the gas flow, block the hafnium tetrachloride particles condensed due to the temperature effect from entering the deposition cavity, and improve the deposition quality of the hafnium dioxide thin film. Therefore, the thin film deposition device provided by the application has the beneficial effect of being able to significantly improve the deposition quality of the hafnium dioxide thin film. BRIEF DESCRIPTION OF DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some of the embodiments of the application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0021] Fig. 1 is a structural schematic diagram of the thin film deposition device provided by the embodiment of the application;

[0022] Fig. 2 is a structural schematic diagram of the hafnium source filter in Fig. 1;

[0023] Fig. 3 is a flow chart of the hafnium dioxide thin film deposition method provided by the embodiment of the application.

[0024] Icons: 100-Thin Film Deposition Equipment; 110-ALD Body; 111-Deposition Chamber; 120-Hafnium Source Filter; 121-Housing; 1211-First Chamber; 1212-Second Chamber; 122-Filter Element; 123-Heating Module; 1231-Resistance Wire; 1232-Insulation Layer; 124-First Connector; 125-Second Connector; 130-Hafnium Source Piping; 131-First Gas Source Valve; 132-Second Gas Source Valve; 140-Controller; 150-Pressure Detection Component.

Detailed Implementation Methods

[0025] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0026] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0027] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0028] In the description of this invention, it should be understood that the terms "upper," "lower," "inner," "outer," "left," "right," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this invention is in use, or the orientation or positional relationship commonly understood by those skilled in the art. They are only used to facilitate the description of this invention and to simplify the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0029] Furthermore, the terms "first," "second," etc., are used only to distinguish descriptions and should not be interpreted as indicating or implying relative importance.

[0030] In the description of this invention, it should also be noted that, unless otherwise explicitly specified and limited, terms such as "set" and "connection" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0031] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0032] During the development of ALD equipment, the inventors discovered that the surface quality of films was poor when depositing certain materials, such as hafnium dioxide films. Further research revealed that one of the hafnium-containing precursors in this process is hafnium tetrachloride. During the process of introducing hafnium tetrachloride into the deposition chamber through a pipeline, the hafnium tetrachloride is highly susceptible to temperature changes and condenses into solid particles within the pipeline. Some of these hafnium tetrachloride particles are carried into the deposition chamber by the gas flow, negatively impacting the deposition quality. To address this issue, this invention was proposed.

[0033] Example

[0034] Please refer to Figure 1, which is a schematic diagram of the structure of a thin film deposition apparatus provided in an embodiment of the present invention.

[0035] The thin film deposition apparatus 100 provided in this embodiment includes an ALD body 110, a hafnium source filter 120, and a hafnium source pipeline 130. The two ends of the hafnium source filter 120 are respectively connected to the ALD body 110 and the hafnium source pipeline 130. The ALD body 110 has a deposition chamber 111. The hafnium source pipeline 130 is connected to the deposition chamber 111 through the hafnium source filter 120. The hafnium source pipeline 130 is used to introduce hafnium tetrachloride gas into the deposition chamber 111, and the hafnium source filter 120 is used to filter hafnium tetrachloride particles in the hafnium tetrachloride gas.

[0036] During the deposition process, the hafnium source pipeline 130 introduces a mixed gas flow consisting of hafnium tetrachloride and inert gas into the deposition chamber 111 of the ALD body 110. Before flowing into the deposition chamber 111, the mixed gas flow passes through the hafnium source filter 120. If the mixed gas flow carries hafnium tetrachloride particles that have condensed due to temperature changes in the hafnium tetrachloride gas, these particles will be blocked by the hafnium source filter 120 and will not be able to enter the deposition chamber 111, thus achieving better deposition quality.

[0037] Please refer to Figure 2, which is a schematic diagram of the hafnium source filter in Figure 1.

[0038] The hafnium source filter 120 includes a housing 121 and a filter element 122. The housing 121 has a filter chamber, and the filter element 122 is housed within the filter chamber. A first connector 124 and a second connector 125 are provided on the housing 121. The first connector 124 is connected to the ALD body 110, and the second connector 125 is connected to the hafnium source pipeline 130. The first connector 124 communicates with the second connector 125 through the filter chamber.

[0039] In this embodiment, both the first connector 124 and the second connector 125 are threaded connectors. In other embodiments, the structures of the first connector 124 and the second connector 125 can be adjusted according to actual application conditions. For example, a plug-in structure with snap-fit ​​can also be used. In practical applications, the second connector 125 guides the mixed gas flow output from the hafnium source pipeline 130 into the filter chamber. The mixed gas flow entering the filter chamber passes through the filter element 122 and flows to the first connector 124, and finally flows into the deposition chamber 111 through the first connector 124.

[0040] To reduce the obstruction effect of the hafnium source filter 120 on the output airflow of the hafnium source pipeline 130 and ensure that the pressure drop across the hafnium source filter 120 is within a reasonable range to meet the pressure requirements of the deposition process, in this embodiment, the filter element 122 divides the filter chamber into a first chamber 1211 and a second chamber 1212. The first chamber 1211 is connected to the first connector 124, and the cross-sectional diameter of the first chamber 1211 is larger than the cross-sectional diameter of the first connector 124. The second chamber 1212 is connected to the second connector 125, and the cross-sectional diameter of the second chamber 1212 is larger than the cross-sectional diameter of the second connector 125.

[0041] In this embodiment, the first chamber 1211, the second chamber 1212, the first connector 124 and the second connector 125 are coaxially arranged, and the cross-section of any one of them refers to the cross-section perpendicular to the axis.

[0042] After the mixed airflow output from the hafnium source pipeline 130 flows into the second chamber 1212 through the second connector 125, the flow area of ​​the mixed airflow increases because the cross-sectional diameter of the second chamber 1212 is larger than that of the second connector 125. The flow velocity of the mixed airflow decreases when it passes through the filter element 122, resulting in less friction between the airflow and the inner surface of the housing 121 and the filter element 122, thus causing less pressure loss. Furthermore, the filtration efficiency of the filter element 122 is improved and the filtration load per unit flow area is reduced, thereby ensuring that the pressure drop before and after passing through the filter element 122 remains almost unchanged.

[0043] As the mixed airflow passes through the first joint 124 from the first chamber 1211, the flow area decreases again, returning to the pressure level before entering the second chamber 1212. Therefore, in this embodiment, the hafnium source filter 120 arranged between the ALD body 110 and the hafnium source pipeline 130 does not cause a significant pressure drop, thus ensuring that the deposition effect is unaffected.

[0044] To avoid chemical contaminants affecting the deposition effect, in this embodiment, both the housing 121 and the filter element 122 are made of 316L stainless steel. Furthermore, to achieve a good surface finish and minimize the possibility of trapping particles and chemicals, the housing 121 in this embodiment undergoes electropolishing treatment. In another embodiment, depending on the actual application conditions, the filter element 122 may also be made of nickel.

[0045] Considering both pressure drop and filtration effect, the diameter of the filter pores in filter element 122 is between 2.9 nm and 3.1 nm, and 3 nm is preferred in this embodiment. In practical applications, particles larger than 3 nm entrained in the mixed airflow can be completely blocked by filter element 122, and most particles smaller than or equal to 3 nm can also be blocked by the bridging effect and the filter pores already blocked by particles.

[0046] In practice, the hafnium source pipeline 130 is equipped with a first gas source valve 131 and a second gas source valve 132. The first gas source valve 131 is used to connect to an external inert gas source to selectively introduce inert gas into the hafnium source pipeline 130. The inert gas can be nitrogen, argon, etc., and in this embodiment, nitrogen is preferred. The second gas source valve 132 is used to connect to an external hafnium tetrachloride source to selectively introduce hafnium tetrachloride gas into the hafnium source pipeline 130.

[0047] Considering that in practical applications, as the working time increases, the number of filter pores on the filter element 122 will gradually increase, leading to a gradual increase in pressure drop and affecting deposition quality. In order to accurately control the deposition pressure and improve the deposition quality, the thin film deposition equipment 100 provided in this embodiment also includes a controller 140 and a pressure detection element 150. The pressure detection element 150 is used to detect the pressure in the hafnium source pipeline 130. The controller 140 is communicatively connected to the pressure detection element 150, the first gas source valve 131, and the second gas source valve 132, respectively. When the pressure detection element 150 detects that the pressure in the hafnium source pipeline 130 is greater than or equal to the pressure threshold, it controls the first gas source valve 131 to open and the second gas source valve 132 to close.

[0048] The specific value of the pressure threshold is preset according to the deposition process requirements. When the pressure detection element 150 detects that the pressure in the hafnium source pipeline 130 reaches the pressure threshold, it indicates that the pressure drop caused by the hafnium source filter 120 is too large, and the filter element 122 needs to be self-cleaned. Continuing deposition under this condition may produce serious defects. Therefore, the controller 140 controls the second gas source valve 132 to close to cut off the hafnium tetrachloride gas supply. The first gas source valve 131 is kept open so that the hafnium source pipeline 130 supplies inert gas alone to clean excess hafnium tetrachloride particles in the filter chamber.

[0049] In fact, the hafnium source pipeline 130 provided in this embodiment has a heating function. During the deposition process, the mixed gas is input into the deposition chamber 111 in a heated state. When the hafnium source pipeline 130 alone supplies inert gas, the high-temperature inert gas heats the hafnium tetrachloride particles accumulated in the filter chamber as it flows through the hafnium source filter 120, causing the hafnium tetrachloride particles to sublimate and pass through the filter element 122 with the gas flow into the deposition chamber 111. Since no new hafnium tetrachloride particles are generated, the amount of accumulated hafnium tetrachloride gradually decreases. To improve the self-cleaning effect, in this embodiment, the controller 140 also controls the opening degree of the first gas source valve 131 to increase.

[0050] Understandably, one of the conditions for the subsequent controller 140 to control the second gas source valve 132 to reopen and resume deposition is that the pressure detection element 150 detects that the pressure in the hafnium source pipeline 130 has dropped below the pressure threshold.

[0051] To improve the self-cleaning efficiency and effectiveness of the hafnium source filter 120, the hafnium source filter 120 provided in this embodiment also includes a heating module 123. The heating module 123 is disposed on the outer wall of the housing 121 and is used to heat the filter chamber. It should be noted that the heating module 123 heats the filter chamber, which enables the hafnium tetrachloride particles trapped in the filter chamber to sublimate rapidly and pass through the filter element 122 again in a gaseous state, so that the pressure drop across the filter element 122 returns to the ideal range.

[0052] In fact, the heating module 123 is connected to the controller 140. When the pressure in the hafnium source pipeline 130 is greater than or equal to the pressure threshold, the controller 140 also controls the heating module 123 to start and heat the filter chamber so that the hafnium tetrachloride particles in the filter chamber sublimate into hafnium tetrachloride gas.

[0053] Specifically, the heating module 123 includes a resistance wire 1231 wound around the outer surface of the housing 121, and an insulating and heat-insulating layer 1232 wrapped around the outside of the resistance wire 1231. The resistance wire 1231 is equipped with an externally powered switch, and the power switch is communicatively connected to the controller 140. The controller 140 can control the opening and closing state of the power switch, thereby controlling the on and off state of the resistance wire 1231.

[0054] The insulating and heat-insulating layer 1232 serves two purposes: preventing leakage of electricity and preventing the heat generated by the resistance wire 1231 after it is energized from leaking out, thereby achieving a better heating effect and further improving the self-cleaning effect of the hafnium source filter 120. In this embodiment, the insulating and heat-insulating layer 1232 is polystyrene foam.

[0055] In another embodiment, to further enhance the self-cleaning effect, the filter element 122 has a heating function. It is also powered by an external power switch. When the controller 140 controls the power switch to be closed, the filter element 122 is powered on and heated, thereby achieving close-range or even contact heating of the hafnium tetrachloride particles accumulated in the filter chamber, which greatly improves the sublimation rate of the hafnium tetrachloride particles.

[0056] In another embodiment, such as when applied to an ALD device, after the hafnium-containing precursor enters the deposition chamber and completes a layer of atomic adsorption, an inert gas is needed to blow away the excess unadsorbed hafnium-containing precursor in the deposition chamber. During this blowing process, the controller 140 can simultaneously control the temperature inside the hafnium source filter 120 to rise when the power switch is closed, so that the hafnium tetrachloride particles accumulated in the filter chamber can be heated and sublimated during the blowing process, ultimately achieving the self-cleaning effect of the hafnium source filter 120.

[0057] This embodiment also provides a hafnium dioxide thin film deposition method. Please refer to Figure 3, which is a flowchart of the hafnium dioxide thin film deposition method provided in this embodiment. The hafnium dioxide thin film deposition method provided in this embodiment is applied to the aforementioned thin film deposition equipment 100 and may include the following steps:

[0058] In step S101, during the deposition process, the hafnium source pipeline 130 is controlled to supply hafnium tetrachloride gas and inert gas to the deposition chamber 111, and the pressure in the hafnium source pipeline 130 is acquired in real time.

[0059] During the deposition process, the controller 140 controls the first gas source valve 131 and the second gas source valve 132 on the hafnium source pipeline 130 to remain open, and receives the detection data from the pressure detection device 150 set on the hafnium source pipeline 130 in real time.

[0060] In step S102, when the pressure in the hafnium source pipeline 130 is greater than or equal to the pressure threshold, the hafnium source pipeline 130 is controlled to stop supplying hafnium tetrachloride gas, the inert gas supply flow rate is increased, and the hafnium source filter 120 is controlled to turn on the heating function.

[0061] When the controller 140 receives detection data that is greater than or equal to the pressure threshold, it controls the second gas source valve 132 to close and controls the first gas source valve 131 to remain open and increase its opening degree. In addition, the controller 140 also controls the heating module 123 of the hafnium source filter 120 to start, and uses inert gas to perform self-cleaning of the hafnium tetrachloride particles accumulated in the filter chamber.

[0062] In summary, the thin film deposition equipment 100 and hafnium dioxide thin film deposition method provided in this embodiment can retain hafnium tetrachloride particles in the hafnium source pipeline 130 without causing a significant decrease in pressure drop, preventing hafnium tetrachloride particles from entering the deposition chamber 111 and affecting the deposition effect. Furthermore, the retained hafnium tetrachloride particles can be converted back into hafnium tetrachloride gas, achieving self-cleaning, improving material utilization while reducing equipment maintenance costs.

[0063] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A thin film deposition apparatus, wherein, The hafnium source filter is connected with the ALD main body and the hafnium source pipeline at two ends, respectively; the ALD main body has a deposition chamber, the hafnium source pipeline is communicated with the deposition chamber through the hafnium source filter, the hafnium source pipeline is used for introducing tetrachlorohafnium gas into the deposition chamber, and the hafnium source filter is used for filtering tetrachlorohafnium particles in the tetrachlorohafnium gas.

2. The thin film deposition apparatus of claim 1, wherein, The hafnium source filter comprises a shell and a filter core, the shell has a filtering cavity, and the filter core is accommodated in the filtering cavity; the shell is provided with a first joint and a second joint, the first joint is connected with the ALD main body, the second joint is connected with the hafnium source pipeline, and the first joint is communicated with the second joint through the filtering cavity.

3. The thin film deposition apparatus of claim 2, wherein, The filter core divides the filtering cavity into a first chamber and a second chamber, the first chamber is communicated with the first joint, the cross-sectional diameter of the first chamber is greater than that of the first joint, the second chamber is communicated with the second joint, and the cross-sectional diameter of the second chamber is greater than that of the second joint.

4. The thin film deposition apparatus of claim 2, wherein, The shell is 316L stainless steel subjected to electrolytic polishing.

5. The thin film deposition apparatus of claim 2, wherein, The filter core is formed of 316L stainless steel and / or nickel.

6. The thin film deposition apparatus of claim 2, wherein, The filter core has filter pores with a diameter of 2.9-3.1 nm.

7. The thin film deposition apparatus of claim 1, wherein, The hafnium source pipeline is respectively provided with a first gas source valve and a second gas source valve, the first gas source valve is used for selectively introducing inert gas into the hafnium source pipeline, and the second gas source valve is used for selectively introducing tetrachlorohafnium gas into the hafnium source pipeline.

8. The thin film deposition apparatus of claim 7, wherein, The thin film deposition device further comprises a controller and a pressure detection member, the pressure detection member is used for detecting the pressure in the hafnium source pipeline, the controller is respectively connected in communication with the pressure detection member, the first gas source valve and the second gas source valve, and is used for controlling the first gas source valve to be opened and the second gas source valve to be closed when the pressure detection member detects that the pressure in the hafnium source pipeline is greater than or equal to a pressure threshold value.

9. The thin film deposition apparatus of claim 8, wherein, The hafnium source filter has a heating module, the heating module is connected in communication with the controller, and the controller is further used for controlling the heating module to heat tetrachlorohafnium particles trapped by the hafnium source filter when the pressure in the hafnium source pipeline is greater than or equal to the pressure threshold value.

10. A hafnium dioxide thin film deposition method applied to the thin film deposition apparatus according to any one of claims 1 to 9, wherein, The hafnium source filter has a heating module, the heating module is connected in communication with the controller, and the controller is further used for controlling the heating module to heat tetrachlorohafnium particles trapped by the hafnium source filter when the pressure in the hafnium source pipeline is greater than or equal to the pressure threshold value. The hafnium source filter has a heating module, the heating module is connected in communication with the controller, and the controller is further used for controlling the heating module to heat tetrachlorohafnium particles trapped by the hafnium source filter when the pressure in the hafnium source pipeline is greater than or equal to the pressure threshold value. The hafnium source filter has a heating module, the heating module is connected in communication with the controller, and the controller is further used for controlling the heating module to heat tetrachlorohafnium particles trapped by the hafnium source filter when the pressure in the hafnium source pipeline is greater than or equal to the pressure threshold value.

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