Shape memory alloy-based thermoelastic heat dissipation apparatus, heat dissipation apparatus and device

Abstract

The present application relates to the technical field of shape memory alloys, in particular to a shape memory alloy-based thermoelastic heat dissipation apparatus and a device, and a shape memory alloy-based heat dissipation apparatus and a device. The thermoelastic heat dissipation apparatus comprises a heat dissipation device, and further comprises a first shape memory alloy group and a thermoelastic shape memory alloy group; the first shape memory alloy group is in thermal contact with a heat source, and is configured for absorbing heat emitted by the heat source; the thermoelastic shape memory alloy group is in thermal contact with the heat dissipation device; in a first state, the thermoelastic shape memory alloy group is in thermal contact with the first shape memory alloy group; in a second state, the thermoelastic shape memory alloy group is not in thermal contact with the first shape memory alloy group, and the thermoelastic shape memory alloy group is configured for transferring heat of the first shape memory alloy group to the heat dissipation device; and when the heat from the heat source is not absorbed, internal microstructures of the first shape memory alloy group and the thermoelastic shape memory alloy group are martensite or a coexistence of martensite and austenite. The heat dissipation apparatuses provided in the present application improve the heat dissipation efficiency of a heat source, and effectively inhibit increases in the temperature of the heat source or cool the heat source to a suitable working temperature.

Description

A thermal elastic heat dissipation device based on shape memory alloy, heat dissipation device and equipment

[0001] This patent application claims priority to the patent application entitled: A thermal elastic heat dissipation device based on shape memory alloy and equipment, Chinese patent application No. CN202410713532.3, filed on June 4, 2024, the patent application entitled: A thermal elastic heat dissipation device based on shape memory alloy and equipment, Chinese patent application No. CN202421256639.1, filed on June 4, 2024, the patent application entitled: A thermal elastic heat dissipation device based on shape memory alloy and equipment, Chinese patent application No. CN202410713521.5, filed on June 4, 2024, and the patent application entitled: A thermal elastic heat dissipation device based on shape memory alloy and equipment, Chinese patent application No. CN202421263912.3, filed on June 4, 2024. The disclosures of the prior applications are incorporated by reference in their entirety. TECHNICAL FIELD

[0002] The present application relates to the technical field of shape memory alloy, in particular to a thermal elastic heat dissipation device based on shape memory alloy, heat dissipation device and equipment. BACKGROUND

[0003] Shape memory alloy is a thermal elastic alloy material composed of two or more metal elements with shape memory effect through martensitic transformation and its reverse transformation. Currently, shape memory alloy is successfully applied in electronic devices, aerospace, medicine and other fields.

[0004] The application of shape memory alloy in electronic devices mainly utilizes the characteristics that shape memory alloy deforms after absorbing heat and restores shape after heat dissipation. For example, a 5G (5th Generation Mobile Communication Technology) mobile phone ceramic backboard structure with easy heat dissipation, in which the heat dissipation fins are made of shape memory alloy material, which deforms after being heated, causing the heat dissipation fins to be raised towards the inside of the heat dissipation cavity, exposing the heat dissipation port and accelerating the heat dissipation efficiency. For another example, a 5G base station AAU (Active Antenna Unit) heat sink based on memory alloy, in which the fins are made of shape memory alloy, and the fins deform after being heated by the 5G base station AAU system, increasing the heat dissipation area and keeping the chip temperature within the normal working range.

[0005] In the first aspect, based on the above application, the shape memory alloy is used for heat dissipation by using the characteristics of shape memory alloy that deforms when heated and restores shape when cooled, ignoring the fact that the phase change of the shape memory alloy itself can absorb a large amount of latent heat, and the combination of the thermal elastic deformation and the phase change of the shape memory alloy is not used as a heat dissipation device.

[0006] In the second aspect, based on the above application, the shape memory alloy is used for heat dissipation by using the characteristics of shape memory alloy that deforms when heated and restores shape when cooled, ignoring the fact that the phase change of the shape memory alloy itself can absorb a large amount of latent heat, and the combination of the thermal elastic deformation and the phase change of the shape memory alloy is not used as a heat dissipation device. Technical problem

[0007] To solve the technical problem of the first aspect, the present application provides a thermal elastic heat dissipation device based on shape memory alloy, which simultaneously uses the thermal elastic deformation and the phase change of the shape memory alloy to absorb a large amount of latent heat as a heat dissipation device.

[0008] To solve the technical problem of the second aspect, the present application provides a heat dissipation device based on shape memory alloy, which uses the phase change process of the internal microstructure of the shape memory alloy from martensite to austenite to absorb a large amount of latent heat, achieving the purpose of heat dissipation of the heat source. Technical solution

[0009] To solve the technical problem of the first aspect and the second aspect, the embodiments of the present application adopt the following technical solutions:

[0010] In the first aspect, the embodiments of the present application provide a thermal elastic heat dissipation device based on shape memory alloy, which includes a heat dissipation device and a first shape memory alloy group and a thermal elastic shape memory alloy group.

[0011] The first shape memory alloy group is in thermal contact with the heat source and is used to absorb the heat emitted by the heat source.

[0012] The thermal elastic shape memory alloy group is in thermal contact with the heat dissipation device, in the first state, the thermal elastic shape memory alloy group is in thermal contact with the first shape memory alloy group, in the second state, the thermal elastic shape memory alloy group is not in thermal contact with the first shape memory alloy group, and the thermal elastic shape memory alloy group is used to transfer the heat of the first shape memory alloy group to the heat dissipation device.

[0013] When the heat of the heat source is not absorbed, the internal microstructure of the first shape memory alloy group and the thermal elastic shape memory alloy group is martensite or coexistence of martensite and austenite.

[0014] In the present application, the heat source can be a chip, a graphics card, a central processing unit, water, or other structures or objects that need to be cooled.

[0015] In some possible implementations, the first state of the thermoelastic shape memory alloy group is a state before the thermoelastic shape memory alloy group absorbs heat of the first shape memory alloy group, and the second state is a state after the thermoelastic shape memory alloy group absorbs heat of the first shape memory alloy group; and / or, the austenite transformation termination temperature of the first shape memory alloy group is less than or equal to the limit working temperature of the heat source; and / or, the austenite transformation initial temperature of the first shape memory alloy group is greater than or equal to the suitable working temperature of the heat source.

[0016] In some possible implementations, the austenite transformation termination temperature (the characteristic temperature at which the martensite is completely transformed into austenite) of the first shape memory alloy group is less than or equal to the limit working temperature of the heat source; and / or, the austenite transformation initial temperature (the characteristic temperature at which the martensite starts to be transformed into austenite) of the first shape memory alloy group is greater than or equal to the suitable working temperature of the heat source. The limit working temperature of the heat source can be the highest temperature at which the chip, the graphics card, the central processing unit, or other structures or objects that need to be cooled can maintain normal working state, or can be the highest temperature at which the water or other heat sources want to reach the cooling temperature. The austenite transformation termination temperature of the first shape memory alloy group being less than or equal to the limit working temperature of the heat source can ensure that when the internal microstructure of the first shape memory alloy group is completely transformed into austenite, the heat source has not reached the limit working temperature or has just reached the limit working temperature. The suitable working temperature of the heat source can be the temperature at which the chip, the graphics card, the central processing unit, or other structures or objects that need to be cooled can work best, or can be the best temperature at which the water or other heat sources want to reach. The austenite transformation initial temperature of the first shape memory alloy group being greater than or equal to the suitable working temperature of the heat source can ensure that when the heat source reaches the upper limit of the suitable working temperature, the internal microstructure of the first shape memory alloy group starts to transform from martensite to austenite.

[0017] In some possible implementations, the thermoelastic shape memory alloy group includes a thermoelastic shape memory alloy and a second shape memory alloy group, the thermoelastic shape memory alloy is located between the first shape memory alloy group and the second shape memory alloy group and is in thermal contact with the second shape memory alloy group, in the first state, the thermoelastic shape memory alloy is in thermal contact with the first shape memory alloy group, and in the second state, the thermoelastic shape memory alloy is not in thermal contact with the first shape memory alloy group; the second shape memory alloy group is in thermal contact with the heat dissipation device, and when the thermoelastic shape memory alloy does not absorb heat of the heat source, the internal microstructure of the thermoelastic shape memory alloy and the second shape memory alloy group is martensite or coexistence of martensite and austenite; the first state of the thermoelastic shape memory alloy is a state before the thermoelastic shape memory alloy absorbs heat of the first shape memory alloy group, and the second state is a state after the thermoelastic shape memory alloy absorbs heat of the first shape memory alloy group.

[0018] In some possible implementations, the number of shape memory alloys in the first shape memory alloy group, the second shape memory alloy group and the thermoelastic shape memory alloy is ≥ 1.

[0019] In some possible implementations, the deformation direction of the first shape memory alloy group, the second shape memory alloy group and the thermoelastic shape memory alloy does not affect the normal operation of the heat source and the heat dissipation device. In the present application, the deformation direction of the shape memory alloy can be adjusted so that the main deformation direction of the shape memory alloy does not affect the normal operation of the heat source and the heat dissipation device, and the deformation in other directions other than the main deformation direction has negligible effect on the heat source and the heat dissipation device.

[0020] In some possible implementations, when the number of shape memory alloys in the first shape memory alloy group, the second shape memory alloy group and the thermoelastic shape memory alloy is > 1, the martensitic transformation termination temperature (the characteristic temperature at which austenite is completely transformed into martensite) of the shape memory alloy near the heat source side in the first shape memory alloy group, the second shape memory alloy group and the thermoelastic shape memory alloy is ≤ the martensitic transformation termination temperature of the shape memory alloy near the heat dissipation device side. Considering that the temperature of the shape memory alloy near the heat dissipation device side is not higher (or lower or equal) than the temperature of the shape memory alloy near the heat source side, this can ensure that during the heat dissipation process, the shape memory alloy near the heat dissipation device side completes the initial state of austenite transformation into martensite or coexistence of martensite and austenite before the shape memory alloy near the heat source side, realizing cyclic heat absorption and dissipation. Considering that the phase transformation process of the austenite of the shape memory alloy near the heat source side into martensite releases latent heat, the shape memory alloy near the heat dissipation device side can continue to absorb the heat of the shape memory alloy near the heat source side to realize the phase transformation from martensite to austenite, which requires the absorption of a large amount of latent heat, and can further dissipate heat to the outside through the heat dissipation device, thereby greatly reducing the heat transferred to the heat source from the heat released by the phase transformation process of the shape memory alloy near the heat source side from austenite to martensite.

[0021] In some possible implementations, the shape memory alloy in the first shape memory alloy group and the thermoelastic shape memory alloy group is selected from one or more of a nickel-titanium alloy, a nickel-titanium-copper alloy, a nickel-titanium-copper-cobalt alloy, a nickel-titanium-copper-vanadium alloy, a nickel-iron-gallium alloy, a copper-aluminum-zinc alloy, a copper-aluminum-manganese alloy, or a copper-aluminum-nickel alloy. The shape memory alloy includes, but is not limited to, a nickel-titanium alloy, a nickel-titanium-copper alloy, a nickel-titanium-copper-cobalt alloy, a nickel-titanium-copper-vanadium alloy, a nickel-iron-gallium alloy, a copper-aluminum-zinc alloy, a copper-aluminum-manganese alloy, or a copper-aluminum-nickel alloy, as long as the shape memory alloy can absorb heat emitted by the heat source and the internal microstructure is a martensite structure or a coexistence of a martensite structure and an austenite structure.

[0022] In some possible implementations, the heat dissipation device includes one of a water-cooled heat dissipation device, an air-cooled heat dissipation device, a VC vapor chamber, a ring-shaped cold pump, graphite, or graphene. The heat dissipation device includes, but is not limited to, a water-cooled heat dissipation device, an air-cooled heat dissipation device, a VC vapor chamber, a ring-shaped cold pump, graphite, or graphene, as long as the heat dissipation device can transfer heat absorbed by the shape memory alloy layer.

[0023] In some possible implementations, the thermoelastic heat dissipation device further includes a one-way heat conduction device located between the heat source and the first shape memory alloy group, configured to unidirectionally transmit heat emitted by the heat source to the first shape memory alloy group; the one-way heat conduction device is in thermal contact with the heat source and the first shape memory alloy group. The one-way heat conduction device is arranged between the first shape memory alloy group and the heat source, and the one-way heat conduction device is in thermal contact with the heat source and the first shape memory alloy group, so that when heat is transmitted from the first shape memory alloy group to the thermoelastic shape memory alloy group, heat from the heat source is not transmitted back to the heat source, thereby ensuring normal operation of the heat source.

[0024] In some possible implementations, the one-way heat conduction device includes one or more of heat-conductive silica gel, one-way heat-conductive carbon fiber, one-way heat-conductive graphite, or graphene. The one-way heat conduction device includes, but is not limited to, heat-conductive silica gel, one-way heat-conductive carbon fiber, one-way heat-conductive graphite, or graphene, as long as the heat-conductive structure can meet the requirement that heat from the heat source is not transmitted back to the heat source.

[0025] In a second aspect, the present application further provides a device including the above-described shape memory alloy-based thermoelastic heat dissipation device.

[0026] In the present application, the device uses the above-described shape memory alloy-based heat dissipation device to dissipate heat from the heat source. The device includes, but is not limited to, a mobile phone, a computer host, an IT device, a data center, a water cup, an air conditioner, or a fan.

[0027] In a third aspect, an embodiment of the present application provides a shape memory alloy-based heat dissipation device, including a heat dissipation device and at least one shape memory alloy layer configured to absorb heat emitted by a heat source.

[0028] The surfaces of the shape memory alloy layer are in thermal contact with the heat source and the heat dissipating device, respectively;

[0029] When the heat of the heat source is not absorbed, the internal microstructure of the shape memory alloy layer is martensite or coexistence of martensite and austenite.

[0030] In the present application, the heat source can be a chip, a graphics card, a central processing unit, water or other structures or objects that need to dissipate heat. The surfaces of the shape memory alloy layer are in thermal contact with the heat source and the heat dissipating device. When the shape memory alloy layer absorbs the heat of the heat source, due to the internal microstructure of the shape memory alloy layer being martensite or coexistence of martensite and austenite, the martensite gradually increases in temperature after absorbing the heat emitted by the heat source, and gradually transforms into austenite. The phase transition process from martensite to austenite requires the absorption of a large amount of latent heat, at the same time, the shape memory alloy layer will transfer the absorbed heat to the heat dissipating device, thereby improving the heat dissipation efficiency of the heat source.

[0031] In some possible implementations, the austenite phase transition termination temperature (the characteristic temperature at which martensite completely transforms into austenite) of the shape memory alloy layer is ≤ the limit working temperature of the heat source. The limit working temperature of the heat source can be the maximum temperature at which the chip, graphics card, central processing unit or other structures or objects can maintain normal working state, or the maximum temperature at which the water or other heat sources want to reach the heat dissipation temperature. The austenite phase transition termination temperature of the shape memory alloy layer ≤ the limit working temperature of the heat source, which can ensure that when the internal microstructure of the shape memory alloy layer is completely transformed into austenite, the heat source has not reached the limit working temperature or has just reached the limit working temperature.

[0032] In some possible implementations, the austenite phase transition initial temperature (the characteristic temperature at which martensite begins to transform into austenite) of the shape memory alloy layer is ≥ the suitable working temperature of the heat source. The suitable working temperature of the heat source can be the temperature at which the chip, graphics card, central processing unit or other structures or objects can have the best working state, or the best temperature that the water or other heat sources want to reach. The austenite phase transition initial temperature of the shape memory alloy layer ≥ the suitable working temperature of the heat source, which can ensure that when the heat source reaches the upper limit of the suitable working temperature, the internal microstructure of the shape memory alloy layer begins to transform from martensite to austenite.

[0033] In some possible implementations, the shape memory alloy layer comprises a first surface and a second surface arranged oppositely, and a third surface adjacent to the first surface;

[0034] Any surface is in thermal contact with the heat dissipating device and the heat source, respectively; or the heat dissipating device and the heat source are in contact with any two surfaces of the shape memory alloy layer, respectively.

[0035] In some possible implementations, the heat dissipation device is in thermal contact with the heat source. The heat dissipation device can dissipate heat directly from the heat source, and can also dissipate heat from the shape memory alloy layer that absorbs heat from the heat source.

[0036] In some possible implementations, the deformation direction of the shape memory alloy layer does not affect the normal operation of the heat source and the heat dissipation device. In this application, the deformation direction of the shape memory alloy layer can be adjusted so that the main deformation direction of the shape memory alloy does not affect the normal operation of the heat source and the heat dissipation device. Deformation in other directions than the main deformation direction has negligible effect on the heat source and the heat dissipation device.

[0037] In some possible implementations, the shape memory alloy layer is provided in two or more layers, wherein, for any adjacent shape memory alloy layers, the martensitic transformation termination temperature (characteristic temperature at which austenite is completely transformed into martensite) of the shape memory alloy layer closer to the heat source is less than or equal to the martensitic transformation termination temperature of the shape memory alloy layer closer to the heat dissipation device. When the heat source is operating at low power or is stopped or the heat source has cooled to an appropriate operating temperature, considering that the temperature of the shape memory alloy layer closer to the heat dissipation device is not higher (lower or equal) than the temperature of the shape memory alloy layer closer to the heat source, this can ensure that during the heat dissipation process, the shape memory alloy layer closer to the heat dissipation device completes the initial state of austenite transformation into martensite or coexistence of martensite and austenite before the shape memory alloy layer closer to the heat source, realizing cyclic heat absorption and dissipation. Considering that the phase transformation process of the shape memory alloy layer closer to the heat source from austenite to martensite releases latent heat, the shape memory alloy layer closer to the heat dissipation device can continue to absorb heat from the shape memory alloy layer closer to the heat source to realize the phase transformation from martensite to austenite, which requires the absorption of a large amount of latent heat, and can further dissipate heat to the outside through the heat dissipation device, thereby greatly reducing the heat transferred to the heat source from the phase transformation process of the shape memory alloy layer closer to the heat source from austenite to martensite.

[0038] In some possible implementations, the heat dissipation device is selected from one of a water-cooled heat dissipation device, an air-cooled heat dissipation device, a VC heat plate, a ring-shaped cold pump, graphite, or graphene. The heat dissipation device includes but is not limited to a water-cooled heat dissipation device, an air-cooled heat dissipation device, a VC heat plate, a ring-shaped cold pump, graphite, or graphene, as long as the heat dissipation device can transfer the heat absorbed by the shape memory alloy layer to the outside.

[0039] In some possible implementation manners, the shape memory alloy layer is selected from one or more of a nickel-titanium alloy, a nickel-titanium-copper alloy, a nickel-titanium-copper-cobalt alloy, a nickel-titanium-copper-vanadium alloy, a nickel-iron-gallium alloy, a copper-aluminum-zinc alloy, a copper-aluminum-manganese alloy, or a copper-aluminum-nickel alloy. The shape memory alloy layer includes, but is not limited to, a nickel-titanium alloy, a nickel-titanium-copper alloy, a nickel-titanium-copper-cobalt alloy, a nickel-titanium-copper-vanadium alloy, a nickel-iron-gallium alloy, a copper-aluminum-zinc alloy, a copper-aluminum-manganese alloy, or a copper-aluminum-nickel alloy, as long as the shape memory alloy can absorb heat emitted by the heat source and the internal microstructure is martensite or coexistence of martensite and austenite.

[0040] In some possible implementation manners, the heat dissipation device further includes a one-way heat conduction device located between the heat source and the shape memory alloy layer, configured to unidirectionally transfer heat emitted by the heat source to the shape memory alloy layer; and the one-way heat conduction device is in thermal contact with the heat source and the shape memory alloy layer. The one-way heat conduction device is arranged between the shape memory alloy layer and the heat source, and the one-way heat conduction device is in thermal contact with the heat source and the shape memory alloy layer, so that heat emitted by the heat source can be transferred to the shape memory alloy layer and further transferred to the heat dissipation device, and heat from the shape memory alloy layer cannot be transmitted back to the heat source, thereby ensuring the optimal temperature of the heat source and normal operation.

[0041] In some possible implementation manners, the one-way heat conduction device includes one or more of heat-conductive silica gel, one-way heat-conductive carbon fiber, one-way heat-conductive graphite, or graphene. The one-way heat conduction device includes, but is not limited to, heat-conductive silica gel, one-way heat-conductive carbon fiber, one-way heat-conductive graphite, or graphene, as long as the heat-conductive structure can meet the requirement that heat from the shape memory alloy layer cannot be transmitted back to the heat source.

[0042] In a fourth aspect, the present application further provides a device including the shape memory alloy-based heat dissipation device described above.

[0043] In the present application, the device uses the shape memory alloy-based heat dissipation device described above to achieve heat dissipation of the heat source. The device includes, but is not limited to, a mobile phone, a computer host, an IT device, a data center, a water cup, an air conditioner, or a fan. Advantages

[0044] Compared with the prior art, the present application has the following advantages:

[0045] The shape memory alloy-based heat dissipation device provided in the first aspect and the device provided in the second aspect of the present application take advantage of the characteristics that the shape memory alloy can absorb a large amount of latent heat when the internal microstructure of the shape memory alloy changes from martensite to austenite, and the shape memory alloy deforms when the martensite changes to austenite, thereby improving the heat dissipation efficiency of the heat source and effectively inhibiting the temperature rise of the heat source or cooling the heat source to a desired temperature.

[0046] The heat dissipation device provided in the third aspect and the equipment provided in the second aspect of the present application utilize the characteristics that the microstructure of the shape memory alloy can absorb a large amount of latent heat when transforming from martensite to austenite, and utilize the combination of multiple layers of shape memory alloy, thereby improving the heat dissipation efficiency of the heat source and effectively inhibiting the increase of the temperature of the heat source or cooling the heat source to a suitable working temperature. BRIEF DESCRIPTION OF DRAWINGS

[0047] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiments will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative effort on the basis of these drawings.

[0048] Fig. 1 is a side view structural schematic diagram of a thermal elastic heat dissipation device based on shape memory alloy provided in an embodiment of the present application;

[0049] Fig. 2 is a side view structural schematic diagram of a thermal elastic heat dissipation device based on shape memory alloy provided in an embodiment of the present application;

[0050] Fig. 3 is a side view structural schematic diagram of a thermal elastic heat dissipation device based on shape memory alloy provided in an embodiment of the present application;

[0051] Fig. 4 is a side view structural schematic diagram of a thermal elastic heat dissipation device based on shape memory alloy provided in an embodiment of the present application;

[0052] Fig. 5 is a side view structural schematic diagram of a thermal elastic heat dissipation device based on shape memory alloy provided in an embodiment of the present application;

[0053] Fig. 6 is a side view structural schematic diagram of a heat dissipation device based on shape memory alloy provided in an embodiment of the present application;

[0054] Fig. 7 is a side view structural schematic diagram of a heat dissipation device based on shape memory alloy provided in an embodiment of the present application;

[0055] Fig. 8 is a side view structural schematic diagram of a heat dissipation device based on shape memory alloy provided in an embodiment of the present application;

[0056] Fig. 9 is a side view structural schematic diagram of a heat dissipation device based on shape memory alloy provided in an embodiment of the present application;

[0057] Fig. 10 is a side view structural schematic diagram of a heat dissipation device based on shape memory alloy provided in an embodiment of the present application;

[0058] Fig. 11 is a side view structural schematic diagram of a heat dissipation device based on shape memory alloy provided in an embodiment of the present application;

[0059] Fig. 12 is a side view structural schematic diagram of a heat dissipation device based on shape memory alloy provided by an embodiment of the present application;

[0060] Fig. 13 is a side view structural schematic diagram of a heat dissipation device based on shape memory alloy provided by an embodiment of the present application;

[0061] Fig. 14 is a side view structural schematic diagram of a heat dissipation device based on shape memory alloy provided by an embodiment of the present application;

[0062] Fig. 15 is a side view structural schematic diagram of a heat dissipation device based on shape memory alloy provided by an embodiment of the present application;

[0063] Fig. 16 is a side view structural schematic diagram of a heat dissipation device based on shape memory alloy provided by an embodiment of the present application;

[0064] Wherein, 1-heat source; 2-heat dissipation device; 3-first shape memory alloy group; 4-one-way heat conduction device; 5-thermoelastic shape memory alloy; 6-second shape memory alloy group, 7-shape memory alloy layer. Embodiments of the present application

[0065] In order to make the purpose, technical scheme and advantages of the present application more clear, the present application is further described in detail below in combination with specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, and are not used to limit the present application.

[0066] The term "and / or" herein is only used to describe the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which can represent the three cases of A alone, A and B together, and B alone.

[0067] The terms "first" and "second" and the like in the specification and claims of the embodiments of the present application are used to distinguish different objects, and are not used to describe the specific order of the objects. For example, the first target object and the second target object are used to distinguish different target objects, and are not used to describe the specific order of the target objects.

[0068] In the embodiments of the present application, the words such as "exemplary" or "for example" are used to mean by way of example, illustration or description. Any embodiment or design scheme described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as more preferred or more advantageous than other embodiments or design schemes. Rather, the words such as "exemplary" or "for example" are intended to present the relevant concept in a specific manner.

[0069] The embodiment of the present application provides a thermal elastic heat dissipation device based on shape memory alloy and a heat dissipation device based on shape memory alloy, both of which are based on shape memory alloy and have the same technical concept. The following will be described in detail.

[0070] Please refer to FIG. 1 to FIG. 5. In the thermal elastic heat dissipation device based on shape memory alloy provided by the embodiment of the present application, the heat dissipation device 2 is selected from one of a water-cooled heat dissipation device, an air-cooled heat dissipation device, a VC heat plate, a ring-shaped cold pump, graphite and graphene. It should be noted that these heat dissipation devices 2 can be adjusted adaptively according to different heat sources 1 to achieve the purpose of dissipating heat or cooling the heat source 1 to the desired temperature.

[0071] In the thermal elastic heat dissipation device based on shape memory alloy provided by the embodiment of the present application, thermal contact refers to good heat transfer effect and high heat conduction efficiency between the two.

[0072] In order to further illustrate the technical scheme of the present application, the technical scheme of the present application will be described in detail below by means of combining the drawings:

[0073] Please refer to FIG. 1. In the first state, i.e. when the first shape memory alloy group 3 does not absorb the heat emitted by the heat source 1, the first shape memory alloy group 3 is in thermal contact with the heat source 1, the thermal elastic shape memory alloy group is in thermal contact with the first shape memory alloy group 3, the thermal elastic shape memory alloy group includes the thermal elastic shape memory alloy 5 and the second shape memory alloy group 6, and the number of shape memory alloys in the first shape memory alloy group 3, the thermal elastic shape memory alloy 5 and the second shape memory alloy group 6 is one. The internal microstructure is martensite or coexistence of martensite and austenite. Taking the chip as an example, the chip generates heat during work, the first shape memory alloy group 3 absorbs the heat generated by the chip, the thermal elastic shape memory alloy 5 absorbs the heat of the first shape memory alloy group 3 and starts to deform, and shrinks towards the heat dissipation device 2. Please refer to FIG. 2, i.e. the second state, after the thermal elastic shape memory alloy 5 shrinks, it is not in thermal contact with the first shape memory alloy group 3, the first shape memory alloy group 3 only absorbs the heat emitted by the heat source 1, the second shape memory alloy group 6 absorbs the heat of the thermal elastic shape memory alloy 5, and the heat dissipation device 2 (air-cooled heat dissipation device) absorbs the heat of the second shape memory alloy group 6. When the heat of the thermal elastic shape memory alloy 5 is absorbed by the second shape memory alloy group 6, the thermal elastic shape memory alloy 5 returns to the first state and starts to absorb the heat of the first shape memory alloy group 3, and the cycle of heat dissipation is carried out.

[0074] Further, when the first shape memory alloy group 3 absorbs the heat emitted by the chip, the temperature of the first shape memory alloy group 3 continuously rises to the austenite phase change end temperature of the first shape memory alloy group 3, and the internal microstructure of the first shape memory alloy group 3 completely transforms from martensite to austenite, it is necessary to satisfy the austenite phase change end temperature of the first shape memory alloy group 3 ≤ the limit working temperature of the chip, so as to prevent the first shape memory alloy group 3 from not being able to absorb the heat emitted by the chip in time, causing the temperature of the chip to exceed its limit working temperature, and causing the chip to be damaged.

[0075] Further, when the first shape memory alloy group 3 absorbs the heat emitted by the chip, the temperature of the first shape memory alloy group 3 continuously rises to the austenite phase change end temperature of the first shape memory alloy group 3, and the internal microstructure of the first shape memory alloy group 3 completely transforms from martensite to austenite, it is necessary to satisfy the austenite phase change end temperature of the first shape memory alloy group 3 ≤ the limit working temperature of the chip, so as to prevent the first shape memory alloy group 3 from not being able to absorb the heat emitted by the chip in time, causing the temperature of the chip to exceed its limit working temperature, and causing the chip to be damaged.

[0076] When the chip is running at low power (generating less heat) or is stopped (not generating heat), the heat dissipation device 2 (air-cooled heat dissipation device) will still transfer the heat absorbed by the first shape memory alloy group 3, the thermoelastic shape memory alloy 5 and the second shape memory alloy group 6 to the air, and the temperature of the first shape memory alloy group 3, the thermoelastic shape memory alloy 5 and the second shape memory alloy group 6 will gradually decrease. Further, when the number of shape memory alloys in the first shape memory alloy group 3 and the second shape memory alloy group 6 is greater than 1, the martensitic transformation termination temperature (the characteristic temperature at which austenite is completely transformed into martensite) of the shape memory alloy on the side close to the heat source 1 in the first shape memory alloy group 3, the second shape memory alloy group 6 and the thermoelastic shape memory alloy 5 is less than or equal to the martensitic transformation termination temperature of the shape memory alloy on the side close to the heat dissipation device 2. Considering that the temperature of the shape memory alloy on the side close to the heat dissipation device 2 is not higher (lower or equal) than the temperature of the shape memory alloy on the side close to the heat source 1, this can ensure that during the heat dissipation cooling process, the shape memory alloy on the side close to the heat dissipation device 2 completes the initial state of austenite transformation into martensite or coexistence of martensite and austenite before the shape memory alloy on the side close to the heat source 1, realizing cyclic heat absorption and dissipation. At this time, the phase change process of the austenite of the shape memory alloy on the side close to the heat dissipation device 2 to the martensite will release latent heat, and then the shape memory alloy on the side close to the heat dissipation device 2 can continue to absorb the heat of the shape memory alloy on the side close to the heat source 1 to realize the phase change from martensite to austenite, and this phase change process needs to absorb a large amount of latent heat, and can further dissipate heat to the outside through the heat dissipation device 2, thereby greatly reducing the heat transfer to the heat source 1 from the phase change process of the shape memory alloy on the side close to the heat source 1 from austenite to martensite. Further, as the temperature gradually decreases to room temperature, the internal microstructure of the thermoelastic shape memory alloy 5 changes from austenite to the initial state of martensite or coexistence of martensite and austenite, and returns to the first state; and the internal microstructure of the shape memory alloy in the first shape memory alloy group 3 and the second shape memory alloy group 6 gradually changes from austenite to the initial state of martensite or coexistence of martensite and austenite, which can cyclically absorb and dissipate heat from the heat source 1, so that the first shape memory alloy group 3, the thermoelastic shape memory alloy 5 and the second shape memory alloy group 6 can be recycled as part of the thermoelastic heat dissipation device of the present application.

[0077] Referring to Fig. 3, in the first state, i.e. when the first shape memory alloy group 3 does not absorb the heat emitted by the heat source 1, the first shape memory alloy group 3 and the heat source 1 are in thermal contact, the thermoelastic shape memory alloy group and the first shape memory alloy group 3 are in thermal contact, the thermoelastic shape memory alloy group comprises a thermoelastic shape memory alloy 5 and a second shape memory alloy group 6, and the number of shape memory alloys in the first shape memory alloy group 3, the thermoelastic shape memory alloy 5 and the second shape memory alloy group 6 is two, and the internal microstructure is martensite or coexistence of martensite and austenite. Taking the heat source as boiling water as an example. The heat of the boiling water (100°C) is reduced to the temperature for direct drinking (35°C), the boiling water is directly in thermal contact with the shape memory alloy 3-1 on the side close to the heat source 1 in the first shape memory alloy group 3, the shape memory alloy 3-2 on the side away from the heat source 1 in the first shape memory alloy group 3 is respectively in thermal contact with the shape memory alloy 3-1 on the side close to the heat source 1 in the first shape memory alloy group 3, the shape memory alloy 5-1 on the side close to the heat source 1 in the thermoelastic shape memory alloy 5, the shape memory alloy 5-2 on the side away from the heat source 1 in the thermoelastic shape memory alloy 5 is in thermal contact with the shape memory alloy 5-1 on the side close to the heat source 1 in the thermoelastic shape memory alloy 5, the shape memory alloy 6-1 on the side close to the heat source 1 in the second shape memory alloy group 6, the shape memory alloy 6-2 on the side away from the heat source 1 in the second shape memory alloy group 6 is in thermal contact with the shape memory alloy 6-1 on the side close to the heat source 1 in the second shape memory alloy group 6, and the heat dissipation device 2 is in thermal contact. When the shape memory alloy 3-1 on the side close to the heat source 1 in the first shape memory alloy group 3 transfers the heat absorbed from the boiling water to the shape memory alloy 3-2 on the side away from the heat source 1 in the first shape memory alloy group 3, the shape memory alloy 5-1 on the side close to the heat source 1 in the thermoelastic shape memory alloy 5 absorbs the heat transferred by the shape memory alloy 3-2 on the side away from the heat source 1 in the first shape memory alloy group 3, and after the shape memory alloy 5-2 on the side away from the heat source 1 in the thermoelastic shape memory alloy 5 absorbs the heat transferred by the shape memory alloy 5-1 on the side close to the heat source 1 in the thermoelastic shape memory alloy 5, the thermoelastic shape memory alloy 5 begins to deform towards the heat dissipation device 2, referring to Fig. 4, i.e. the second state, the shape memory alloy 6-1 on the side close to the heat source 1 in the second shape memory alloy group 6 absorbs the heat transferred by the shape memory alloy 5-2 on the side away from the heat source 1 in the thermoelastic shape memory alloy 5, the shape memory alloy 6-2 on the side away from the heat source 1 in the second shape memory alloy group 6 absorbs the heat of the shape memory alloy 6-1 on the side close to the heat source 1 in the second shape memory alloy group 6, and the heat dissipation device 2 (air cooling heat dissipation device) absorbs the heat transferred by the shape memory alloy 6-2 on the side away from the heat source 1 in the second shape memory alloy group 6, completing the emission of heat.

[0078] Further, when the boiled water cools to a temperature that can be directly drunk, the heat dissipation device 2 (air-cooled heat dissipation device) still transmits the heat absorbed by the first shape memory alloy group 3, the thermoelastic shape memory alloy 5 and the second shape memory alloy group 6 to the air, and the temperature of the first shape memory alloy group 3, the thermoelastic shape memory alloy 5 and the second shape memory alloy group 6 slowly decreases. The martensitic transformation termination temperature (the characteristic temperature at which austenite is completely transformed into martensite) of the shape memory alloy on the side close to the heat source 1 in the first shape memory alloy group 3, the second shape memory alloy group 6 and the thermoelastic shape memory alloy 5 is less than the martensitic transformation termination temperature of the shape memory alloy on the side close to the heat dissipation device 2, so that the shape memory alloy 6-2 on the side far from the heat source 1 in the second shape memory alloy group 6 can absorb the heat emitted by the shape memory alloy 6-1 on the side close to the heat source 1 in the second shape memory alloy group 6 before the shape memory alloy 6-1 on the side close to the heat source 1 in the second shape memory alloy group 6 changes the internal microstructure from austenite to martensite or the initial state of coexistence of martensite and austenite, and further reduces the heat transfer of the shape memory alloy 6-1 on the side close to the heat source 1 in the second shape memory alloy group 6 to the heat source 1. The shape memory alloy 5-2 on the side far from the heat source 1 in the thermoelastic shape memory alloy 5 can absorb the heat emitted by the shape memory alloy 5-1 on the side close to the heat source 1 in the thermoelastic shape memory alloy 5 before the shape memory alloy 5-1 on the side close to the heat source 1 in the thermoelastic shape memory alloy 5 changes the internal microstructure from austenite to martensite or the initial state of coexistence of martensite and austenite, and further reduces the heat transfer of the shape memory alloy 5-1 on the side close to the heat source 1 in the thermoelastic shape memory alloy 5 to the heat source 1. The shape memory alloy 3-2 on the side far from the heat source 1 in the first shape memory alloy group 3 can absorb the heat emitted by the shape memory alloy 3-1 on the side close to the heat source 1 in the first shape memory alloy group 3 before the shape memory alloy 3-1 on the side close to the heat source 1 in the first shape memory alloy group 3 changes the internal microstructure from austenite to martensite or the initial state of coexistence of martensite and austenite, and further reduces the heat transfer of the shape memory alloy 3-1 on the side close to the heat source 1 in the first shape memory alloy group 3 to the heat source 1.Further, as the temperature gradually decreases to room temperature, the internal microstructure of the thermoelastic shape memory alloy 5 is transformed from austenite to martensite or the initial state of coexistence of martensite and austenite, and returns to the first state; and the internal microstructure of the shape memory alloys in the first shape memory alloy group 3 and the second shape memory alloy group 6 is gradually transformed from austenite to martensite or the initial state of coexistence of martensite and austenite, which can cyclically absorb and dissipate heat from the heat source 1, so that the first shape memory alloy group 3, the thermoelastic shape memory alloy 5 and the second shape memory alloy group 6 can be recycled as part of the thermoelastic heat dissipation device of the present application.

[0079] Referring to FIG. 5, in the first state, i.e., when the first shape memory alloy group 3 does not absorb the heat emitted by the heat source 1, the first shape memory alloy group 3 and the heat source 1 are in thermal contact, the thermoelastic shape memory alloy 5 and the first shape memory alloy group 3 are in thermal contact, the second shape memory alloy group 6 is in thermal contact with the thermoelastic shape memory alloy 5 and the heat dissipation device 2 respectively, and the number of shape memory alloys in the first shape memory alloy group 3, the thermoelastic shape memory alloy 5 and the second shape memory alloy group 6 is one or more, and the internal microstructure is martensite or coexistence of martensite and austenite. The unidirectional heat conduction device 4 is located between the heat source 1 and the first shape memory alloy group 3, and is in thermal contact with the heat source 1 and the first shape memory alloy group 3 respectively. By arranging the unidirectional heat conduction device 4 between the first shape memory alloy group 3 and the heat source 1, and arranging the unidirectional heat conduction device 4 in thermal contact with the heat source 1 and the first shape memory alloy group 3, the heat of the first shape memory alloy group 3 can be transferred to the thermoelastic shape memory alloy 5 without returning the heat from the heat source 1 to the heat source 1, thereby ensuring the normal operation of the heat source 1.

[0080] In addition, the number of shape memory alloys in the first shape memory alloy group 3, the thermoelastic shape memory alloy 5 and the second shape memory alloy group 6 can also be three, four, five or more, and the specific heat transfer principle is the same as that of the above-mentioned embodiment, and the heat is transferred in turn according to the arrangement order of the shape memory alloys in the first shape memory alloy group 3, the thermoelastic shape memory alloy 5 and the second shape memory alloy group 6.

[0081] The present application also provides a device comprising the above-mentioned heat dissipation device based on shape memory alloy.

[0082] In the present application, the device uses the above-mentioned heat dissipation device based on shape memory alloy to dissipate heat from the heat source. The device includes but is not limited to a mobile phone, a computer host, an IT device, a data center, a water cup, an air conditioner or a fan.

[0083] Please refer to FIG. 6 to FIG. 16, in the shape memory alloy-based heat dissipation device provided by the embodiments of the present application, the heat dissipation device 2 is selected from one of a water-cooled heat dissipation device, an air-cooled heat dissipation device, a VC heat plate, a ring-shaped cold pump, graphite or graphene. It should be noted that these heat dissipation devices 2 can be adjusted adaptively according to different heat sources 1 to achieve the purpose of dissipating heat or cooling the heat source 1 to a suitable working temperature.

[0084] In the shape memory alloy-based heat dissipation device provided by the embodiments of the present application, thermal contact refers to good heat transfer effect and high heat conduction efficiency between the two.

[0085] A shape memory alloy-based heat dissipation device, comprising a heat source 1, a heat dissipation device 2, and at least one shape memory alloy layer 7. The positional relationship of the three satisfies that the surfaces of the shape memory alloy layer 7 are in thermal contact with the heat source 1 and the heat dissipation device 2, respectively, and is not limited to the positional relationship listed in the drawings of the specification. The shapes and sizes of the heat source 1, the heat dissipation device 2 and the shape memory alloy layer 7 are also not limited to the shapes and sizes in the drawings of the specification.

[0086] In order to further illustrate the technical solutions of the present application, the technical solutions of the present application will be described in detail below by means of combining the drawings:

[0087] Referring to FIG. 6 to FIG. 9, the shape memory alloy layer 7 is in thermal contact with the heat source 1 and the heat dissipation device 2, the number of the shape memory alloy layer 7 is one, and the internal microstructure of the shape memory alloy layer 7 is martensite or coexistence of martensite and austenite. Taking a chip as an example, the chip generates heat during operation, the shape memory alloy layer 7 absorbs the heat generated by the chip, at the same time, the heat dissipation device 2 (air-cooled heat dissipation device) transfers the heat absorbed by the shape memory alloy layer 7 to the air, and as the temperature of the shape memory alloy layer 7 continuously rises, the heat absorbed continuously increases, and the martensite in the internal microstructure of the shape memory alloy layer 7 gradually changes to austenite.

[0088] Further, when the shape memory alloy layer 7 absorbs the heat emitted by the chip and the temperature of the shape memory alloy layer 7 rises to the austenite phase transition initial temperature of the shape memory alloy layer 7, the internal microstructure of the shape memory alloy layer 7 starts to change from martensite to austenite, which needs to satisfy that the austenite phase transition initial temperature of the shape memory alloy layer 7 ≥ the suitable working temperature of the chip, so that the shape memory alloy layer 7 can absorb more heat when it exceeds the suitable working temperature range of the chip.

[0089] Further, when the shape memory alloy layer 7 absorbs the heat emitted by the chip, the temperature of the shape memory alloy layer 7 continuously rises to the austenite phase transition termination temperature of the shape memory alloy layer 7, and the internal microstructure of the shape memory alloy layer 7 completely transforms from martensite to austenite, then the austenite phase transition termination temperature of the shape memory alloy layer 7 needs to be less than or equal to the limit working temperature of the chip, so as to prevent the shape memory alloy layer 7 from not absorbing the heat emitted by the chip in time, causing the temperature of the chip to exceed its limit working temperature, and the chip is damaged.

[0090] When the chip is running at low power (less heat generated) or stopped working (no heat generated), the heat dissipation device 2 (air-cooled heat dissipation device) will still transfer the heat absorbed by the shape memory alloy layer 7 to the air, and the temperature of the shape memory alloy layer 7 slowly decreases, and the internal microstructure of the shape memory alloy layer 7 gradually transforms from austenite to martensite or the initial state of coexistence of martensite and austenite, which can cyclically absorb and dissipate heat from the heat source 1, so that the shape memory alloy layer 7 can be recycled as part of the heat dissipation device of the present application.

[0091] Referring to FIG. 10, the surface of the shape memory alloy layer 7 is in thermal contact with the heat source 1 and the heat dissipation device 2, and the heat dissipation device 2 is also in thermal contact with the heat source 1. Taking the chip as the heat source 1, the chip generates heat when working, and the heat can be transferred to the circulating cooling water through the heat dissipation device 2 (water-cooled heat dissipation device), and can also be transferred to the shape memory alloy layer 7, and then transferred to the heat dissipation device 2 (water-cooled heat dissipation device) through the shape memory alloy layer 7, and then transferred to the circulating cooling water.

[0092] Referring to FIG. 11, the shape memory alloy layer 7 is in thermal contact with the heat source 1 and the heat dissipation device 2, the number of shape memory alloy layers 7 is greater than one, and the internal microstructure of the shape memory alloy layer 7 is martensite or coexistence of martensite and austenite. Taking the number of shape memory alloy layers 7 as two and the boiling water as the heat source 1 as an example. The heat (100℃) of the boiling water is reduced to the direct drinking temperature (35℃), the boiling water is directly in thermal contact with the first shape memory alloy layer 7, the first shape memory alloy layer 7 is in thermal contact with the second shape memory alloy layer 7, and the second shape memory alloy layer 7 is in thermal contact with the heat dissipation device 2 (air-cooled heat dissipation device). The first shape memory alloy layer 7 transfers the heat absorbed from the boiling water to the second shape memory alloy layer 7, the second shape memory alloy layer 7 transfers the heat absorbed from the first shape memory alloy layer 7 to the heat dissipation device 2 (air-cooled heat dissipation device), and the heat dissipation device 2 (air-cooled heat dissipation device) transfers the heat absorbed by the second shape memory alloy layer 7 to the air. As the temperature of the first shape memory alloy layer 7 and the second shape memory alloy layer 7 continuously rises, the heat absorbed continuously increases, and the martensite in the internal microstructure of the first shape memory alloy layer 7 and the second shape memory alloy layer 7 gradually transforms into austenite.

[0093] Further, when the boiled water cools to a temperature for direct drinking, the first shape memory alloy layer 7 stops absorbing the heat emitted by the water, the temperature of the first shape memory alloy layer 7 and the second shape memory alloy layer 7 starts to decrease, and the internal structure gradually changes from austenite to martensite. When the martensite phase change termination temperature of the shape memory alloy layer 7 near the heat source 1 side is less than or equal to the martensite phase change termination temperature of the shape memory alloy layer 7 near the heat dissipation device 2 side, that is, the martensite phase change termination temperature of the first shape memory alloy layer 7 is less than or equal to the martensite phase change termination temperature of the second shape memory alloy layer 7, the second shape memory alloy layer 7 can change the internal microstructure from austenite to martensite or to the initial state of coexistence of martensite and austenite before the first shape memory alloy layer 7 during the heat dissipation and cooling process, and the second shape memory alloy layer 7 can further absorb the heat emitted by the first shape memory alloy layer 7 through the phase change from martensite to austenite, reducing the heat transfer of the first shape memory alloy layer 7 to the heat source 1.

[0094] Referring to FIGS. 12 to 16, the shape memory alloy layer 7 is in thermal contact with the heat source 1 and the heat dissipation device 2, the number of the shape memory alloy layer 7 is one or more, and the internal microstructure of the shape memory alloy layer 7 is martensite or coexistence of martensite and austenite. The heat dissipation device of the embodiment of the present application further comprises a one-way heat conduction device 4 located between the heat source 1 and the shape memory alloy layer 7, and the one-way heat conduction device 4 is in thermal contact with the heat source 1 and the shape memory alloy layer 7. The one-way heat conduction device 4 is arranged between the shape memory alloy layer 7 and the heat source 1, and the one-way heat conduction device 4 is in thermal contact with the heat source 1 and the shape memory alloy layer 7, so that when the heat of the shape memory alloy layer 7 is transferred to the heat dissipation device 2, the heat from the shape memory alloy layer 7 will not be transmitted back to the heat source 1, thereby ensuring the normal operation of the heat source 1.

[0095] In addition, the number of the shape memory alloy layer 7 can also be three, four, five or more, and the specific heat transfer principle is the same as that of the above-mentioned embodiments, and the heat transfer is performed according to the arrangement order of the plurality of shape memory alloy layers 7.

[0096] The embodiment of the present application further provides a device comprising the above-mentioned heat dissipation device based on the shape memory alloy.

[0097] In the present application, the device adopts the above-mentioned heat dissipation device based on the shape memory alloy to achieve heat dissipation of the heat source. The device includes but is not limited to a mobile phone, a computer host, an IT device, a data center, a water cup, an air conditioner or a fan.

[0098] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. Any modification, equivalent replacement or improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A thermoelastic heat spreading device based on shape memory alloys, comprising a heat spreading device, characterized in that, The first shape memory alloy group and the thermoelastic shape memory alloy group are in thermal contact with the heat source and the heat dissipating device, respectively. The first shape memory alloy group and the thermoelastic shape memory alloy group are in thermal contact with the heat source and the heat dissipating device, respectively. The thermoelastic shape memory alloy group is in thermal contact with the heat dissipating device in the first state and not in thermal contact with the first shape memory alloy group in the second state, and the thermoelastic shape memory alloy group is used to transfer the heat of the first shape memory alloy group to the heat dissipating device. The internal microstructure of the first shape memory alloy group and the thermoelastic shape memory alloy group is martensite or coexistence of martensite and austenite when the heat of the heat source is not absorbed.

2. The shape memory alloy based thermoelastic heat spreading device of claim 1, wherein, The first state of the thermoelastic shape memory alloy group is the state before absorbing the heat of the first shape memory alloy group, and the second state is the state after absorbing the heat of the first shape memory alloy group. The austenite transformation termination temperature of the first shape memory alloy group is ≤ the limit working temperature of the heat source; and / or The austenite transformation initial temperature of the first shape memory alloy group is ≥ the suitable working temperature of the heat source.

3. The shape memory alloy based thermoelastic heat spreading device of claim 1, wherein, The thermoelastic shape memory alloy group comprises a thermoelastic shape memory alloy and a second shape memory alloy group, the thermoelastic shape memory alloy is located between the first shape memory alloy group and the second shape memory alloy group and is in thermal contact with the second shape memory alloy group, the thermoelastic shape memory alloy is in thermal contact with the first shape memory alloy group in the first state and not in thermal contact with the first shape memory alloy group in the second state; the second shape memory alloy group is in thermal contact with the heat dissipating device, and the internal microstructure of the thermoelastic shape memory alloy and the second shape memory alloy group is martensite or coexistence of martensite and austenite when the heat of the heat source is not absorbed. The first state of the thermoelastic shape memory alloy group is the state before absorbing the heat of the first shape memory alloy group, and the second state is the state after absorbing the heat of the first shape memory alloy group.

4. The shape memory alloy based thermoelastic heat spreading device of claim 3, wherein, The number of shape memory alloys in the first shape memory alloy group, the second shape memory alloy group and the thermoelastic shape memory alloy group is ≥ 1.

5. The shape memory alloy based thermoelastic heat spreading device of claim 4, wherein, When the number of shape memory alloys in the first shape memory alloy group, the second shape memory alloy group and the thermoelastic shape memory alloy group is > 1, the martensite transformation termination temperature of the shape memory alloy close to the heat source side is ≤ the martensite transformation termination temperature of the shape memory alloy close to the heat dissipating device side.

6. The shape memory alloy based thermoelastic heat spreading device of claim 1, wherein, The shape memory alloys in the first shape memory alloy group and the thermoelastic shape memory alloy group are selected from one or more of nickel-titanium alloy, nickel-titanium-copper alloy, nickel-titanium-copper-cobalt alloy, nickel-titanium-copper-vanadium alloy, nickel-iron-gallium alloy, copper-aluminum-zinc alloy, copper-aluminum-manganese alloy or copper-aluminum-nickel alloy.

7. The shape memory alloy based thermoelastic heat spreading device of claim 1, wherein, The heat dissipation device is selected from one of a water-cooled heat dissipation device, an air-cooled heat dissipation device, a VC uniform heat plate, a ring-shaped cold pump, graphite, or graphene.

8. The shape memory alloy based thermoelastic heat spreading device of claim 1, wherein, The thermoelastic heat dissipation device further comprises a one-way heat conduction device between the heat source and the first shape memory alloy group, for unidirectional transmission of heat emitted by the heat source to the first shape memory alloy group. The one-way heat conduction device is in thermal contact with the heat source and the first shape memory alloy group.

9. The shape memory alloy based thermoelastic heat spreading device of claim 8, wherein, The one-way heat conduction device comprises one or more of heat-conductive silica gel, one-way heat-conductive carbon fiber, one-way heat-conductive graphite, or graphene.

10. An apparatus comprising the thermoelastic heat dissipation device based on shape memory alloy according to any one of claims 1-9.

11. A shape memory alloy based heat dissipation device comprising a heat dissipation apparatus, characterized in that, Further comprising at least one shape memory alloy layer for absorbing heat emitted by the heat source; The surfaces of the shape memory alloy layer are respectively in thermal contact with the heat source and the heat dissipation device. When the heat emitted by the heat source is not absorbed, the internal microstructure of the shape memory alloy layer is martensite or coexistence of martensite and austenite.

12. The shape memory alloy based heat spreading device of claim 11, wherein, The austenite phase transition termination temperature of the shape memory alloy layer is ≤ the extreme working temperature of the heat source; and / or The austenite phase transition initial temperature of the shape memory alloy layer is ≥ the suitable working temperature of the heat source.

13. The shape memory alloy based heat dissipation device of claim 11, wherein, The shape memory alloy layer comprises oppositely arranged first and second surfaces, and a third surface adjacent to the first surface; Any surface is respectively in thermal contact with the heat dissipation device and the heat source; or the heat dissipation device and the heat source are respectively in contact with any two surfaces of the shape memory alloy layer.

14. The shape memory alloy based heat spreading device of claim 13, wherein, The heat dissipation device is in thermal contact with the heat source.

15. The shape memory alloy based heat dissipation device of claim 11, wherein, The shape memory alloy layer is provided in two or more layers, wherein the martensite phase transition termination temperature of the shape memory alloy layer closer to the heat source is ≤ the martensite phase transition termination temperature of the shape memory alloy layer closer to the heat dissipation device.

16. The shape memory alloy based heat spreading device according to any one of claims 11-14, characterized in that, The heat dissipation device is selected from one of a water-cooled heat dissipation device, an air-cooled heat dissipation device, a VC uniform heat plate, a ring-shaped cold pump, graphite, or graphene.

17. A shape memory alloy based heat spreading device according to any of claims 11-15, characterized in that, The shape memory alloy layer is selected from one or more of nickel-titanium alloy, nickel-titanium-copper alloy, nickel-titanium-copper-cobalt alloy, nickel-titanium-copper-vanadium alloy, nickel-iron-gallium alloy, copper-aluminum-zinc alloy, copper-aluminum-manganese alloy, or copper-aluminum-nickel alloy.

18. The shape memory alloy based heat dissipation device of claim 11, wherein, The heat dissipation device further comprises a one-way heat conduction device between the heat source and the shape memory alloy layer, for unidirectional transmission of heat emitted by the heat source to the shape memory alloy layer; The one-way heat conduction device is in thermal contact with the heat source and the shape memory alloy layer.

19. The shape memory alloy based heat spreading device of claim 18, wherein, The one-way heat conduction device comprises one or more of heat-conductive silica gel, one-way heat-conductive carbon fiber, one-way heat-conductive graphite, or graphene.

20. An apparatus comprising the heat dissipation device based on shape memory alloy according to any one of claims 11-19.

Images