Plasma processing device

Abstract

The present invention relates to a plasma processing device comprising a plurality of antennas, the plasma processing device adjusting the intensity of plasma according to a simple procedure and generating plasma ions with uniform intensity. The plasma processing device comprises: a vacuum container (1); and a first antenna (31) and second antenna (32) that are provided outside the vacuum container (1) and generate plasma (P1) inside the vacuum container (1), wherein the first antenna (31) and the second antenna (32) are configured to be movable with respect to each other.

Description

Plasma processing equipment

[0001] The present disclosure relates to a plasma processing apparatus.

[0002] In plasma CVD, it is necessary to make the plasma ion density uniform in the space near the target object. To achieve this, plasma processing apparatuses are sometimes configured to include multiple short antennas (inductively coupled antennas), as described in, for example, Patent Documents 1 and 2.

[0003] Japanese Patent Publication No. 2016-072065 Japanese Patent Publication No. 2014-192318

[0004] However, in the plasma processing apparatuses disclosed in Patent Documents 1 and 2, the plasma intensity increases between two adjacent antennas, and the uniformity of the plasma ion density within the plasma processing apparatus may not be sufficiently ensured. Furthermore, since the distribution of the plasma ion density is determined by the design relating to the spacing between the antennas, adjusting the distribution of the plasma ion density within a completed plasma processing apparatus requires opening the vacuum space within the plasma processing apparatus to the atmosphere and adjusting the spacing between the antennas, which is cumbersome.

[0005] An object of one aspect of the present disclosure is to realize a plasma intensity adjustment by a simple procedure in a plasma processing apparatus equipped with multiple antennas, and to generate plasma ions at a uniform density.

[0006] In order to solve the above problems, a plasma processing apparatus according to one embodiment of the present disclosure comprises a vacuum container whose interior is evacuated to a vacuum, and a plurality of antennas that are provided outside the vacuum container and generate plasma inside the vacuum container by passing a high-frequency current through them, and when one of two adjacent antennas among the plurality of antennas is designated as a first antenna and the other is designated as a second antenna, the first antenna and the second antenna are configured to be movable relative to each other so that the area of ​​the region where the first plane and the second plane overlap can be changed when viewed from a first direction perpendicular to a first plane including the extension direction of the first antenna or a second plane including the extension direction of the second antenna.

[0007] According to one aspect of the present disclosure, in a plasma processing apparatus equipped with multiple antennas, adjustment of plasma intensity can be achieved through a simple procedure, and plasma ions can be generated at a uniform density.

[0008] 1 is a cross-sectional view showing an example of a configuration of a plasma processing apparatus according to an embodiment of the present disclosure. FIG. 2 is a cross-sectional view showing an example of a peripheral structure of a first antenna and a second antenna included in the plasma processing apparatus shown in FIG. 1. FIG. 3 is a diagram for explaining movement of the first antenna and the second antenna shown in FIG. 2. FIG. 4 is a cross-sectional view showing an example of a peripheral structure of a first antenna and a second antenna included in a plasma processing apparatus according to a first modification of the present disclosure. FIG. 5 is a perspective view showing an example of a peripheral structure of a first antenna and a second antenna included in a plasma processing apparatus according to a second modification of the present disclosure. FIG. 6 is a perspective view showing an example of a peripheral structure of a first antenna and a second antenna included in a plasma processing apparatus according to a third modification of the present disclosure. FIG. 7 is a view of the peripheral structure of the first antenna and the second antenna shown in FIG. 6 from the Y-axis direction, illustrating how the first antenna and the second antenna move relative to each other. FIG. 8 is a view of the peripheral structure of the first antenna and the second antenna shown in FIG. 7 from the Z-axis direction, illustrating how the first antenna and the second antenna move relative to each other.

[0009] <Configuration of Plasma Processing Apparatus 100> Figure 1 is a cross-sectional view showing an example of the configuration of a plasma processing apparatus 100 according to an embodiment of the present disclosure. In Figure 1, the direction in which the first antenna 31 and the second antenna 32 are aligned is the X-axis direction, the direction from the vacuum chamber 1 toward the radio frequency window 2 is the positive Z-axis direction, and the direction perpendicular to both the X-axis direction and the Z-axis direction is the Y-axis direction. The X-axis and Z-axis directions are perpendicular to each other. The definitions of directions described here also apply to other figures.

[0010] The plasma processing apparatus 100 uses an inductively coupled plasma P1 to process a substrate W1 placed inside a vacuum chamber 1. The substrate W1 is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic EL display, or a flexible substrate for a flexible display. The processing performed on the substrate W1 includes, for example, film formation by a plasma CVD (Chemical Vapor Deposition) method or a sputtering method, plasma etching, ashing, or coating film removal.

[0011] 1 , the plasma processing apparatus 100 includes a vacuum chamber 1, a radio frequency window 2, a vacuum exhaust device 4, and a radio frequency power supply 5. The plasma processing apparatus 100 also includes a plurality of antennas, namely, a first antenna 31 and a second antenna 32. Here, one of two adjacent antennas among the plurality of antennas is designated as the first antenna 31, and the other is designated as the second antenna 32.

[0012] The plasma processing apparatus 100 may include three or more antennas as the plurality of antennas. In this case, one of two adjacent antennas among the three or more antennas is designated as the first antenna 31, and the other is designated as the second antenna 32. Hereinafter, the contents described regarding the first antenna 31 and the second antenna 32 will be applied to any two adjacent antennas among the three or more antennas.

[0013] <Configuration of Vacuum Vessel 1 and Vacuum Exhaust Device 4> The vacuum vessel 1 is, for example, a metal vessel, and has an opening 11 formed in an upper wall 1A on the positive side of the Z axis of the vacuum vessel 1. The opening 11 is formed in a position on the upper wall 1A facing the first antenna 31 and the second antenna 32. The vacuum vessel 1 is electrically grounded by being connected to the ground.

[0014] The interior of the vacuum vessel 1 is evacuated by a vacuum exhaust device 4. The vacuum exhaust device 4 has a pump that evacuates the interior of the vacuum vessel 1. A gas GS is introduced into the vacuum vessel 1, for example, via a flow rate regulator (not shown) or at least one gas inlet 12 formed in the vacuum vessel 1.

[0015] The gas GS may be selected depending on the processing to be performed on the substrate W1. For example, when a film is formed on the substrate W1 by plasma CVD, the gas GS may be a source gas or a dilution gas thereof (for example, H ２ ) is diluted with the raw material gas SiH ４ In the case of ４ +NH ３ In the case of ４ +O ２ In the case of SiO ２ The film was then treated with SiF ４ +N ２ In the case of (1), a SiN:F film (fluorinated silicon nitride film) can be formed on the substrate W1.

[0016] <Configuration of Radio Frequency Window 2> Figure 2 is a cross-sectional view showing an example of the peripheral structure of the first antenna 31 and the second antenna 32 included in the plasma processing apparatus 100 shown in Figure 1. The radio frequency window 2 introduces the radio frequency magnetic field generated by the first antenna 31 and the second antenna 32 into the vacuum vessel 1 in order to generate plasma P1 inside the vacuum vessel 1. As shown in Figures 1 and 2, the radio frequency window 2 includes a flange portion 21 and a dielectric plate 22. The radio frequency window 2 is provided on the upper wall 1A of the vacuum vessel 1.

[0017] The flange portion 21 forms an outer frame portion of the high-frequency window 2 when the high-frequency window 2 is viewed from the positive side of the Z axis toward the negative side of the Z axis. This forms an opening 21A in the high-frequency window 2. The flange portion 21 is made of metal, and the mechanical strength of the flange portion 21 is preferably higher than the mechanical strength of the dielectric plate 22. The thickness of the flange portion 21 along the Z axis direction is preferably larger than the thickness of the dielectric plate 22 along the Z axis direction.

[0018] The flange portion 21 is electrically grounded by being provided on the electrically grounded vacuum vessel 1. By being electrically grounded, the flange portion 21 allows the magnetic fields generated from the first antenna 31 and the second antenna 32 to pass into the interior of the vacuum vessel 1. The flange portion 21 also blocks the electric field generated due to the potential of the first antenna 31 and the second antenna 32 when a high-frequency current I1 is introduced into the first antenna 31 and the second antenna 32. The magnetic fields generated from the first antenna 31 and the second antenna 32 are introduced into the interior of the vacuum vessel 1 from the opening 21A via the dielectric plate 22.

[0019] The flange portion 21 is made of a metal material such as one metal selected from the group including Cu, Al, Zn, Ni, Sn, Si, Ti, Fe, Cr, Nb, C, Mo, W, or Co, or an alloy thereof (for example, a stainless steel alloy or an aluminum alloy).

[0020] A seal S1 provided in the plasma processing apparatus 100 is interposed between the flange 21 and the upper wall 1A. The seal S1 provides a vacuum seal between the flange 21 and the upper wall 1A. The seal S1 is, for example, a gasket such as an O-ring or a rubber sheet. The seal S1 may also be, for example, an adhesive material. In this case, the seal S1 may be a lubricating oil such as a high-viscosity vacuum grease with a low vapor pressure.

[0021] <Configuration of Dielectric Plate 22> The dielectric plate 22 is provided on the flange portion 21 so as to close the opening 21A from the outside of the vacuum vessel 1. Thus, the dielectric plate 22 is arranged so as to close the opening 11 formed in the vacuum vessel 1 at a position facing the first antenna 31 and the second antenna 32. The dielectric plate 22 blocks the movement of gas at the opening 21A, that is, blocks the movement of gas at the opening 11. In this way, the dielectric plate 22 keeps the interior of the vacuum vessel 1 airtight.

[0022] The dielectric plate 22 is a flat plate made entirely of a dielectric material. The dielectric plate 22 is made of, for example, ceramics such as alumina, silicon carbide, or silicon nitride, inorganic materials such as quartz glass or alkali-free glass, or resin materials such as fluororesin. The dielectric plate 22 allows the magnetic fields generated from the first antenna 31 and the second antenna 32 to pass through into the vacuum vessel 1. As a result, a magnetic field is formed inside the vacuum vessel 1, generating an induced electric field. The induced electric field ionizes the gas GS, generating plasma P1.

[0023] The dielectric plate 22 is preferably formed of a single plate, which makes it easy to reduce the thickness of the dielectric plate 22. This makes it easy to shorten the distance between the first antenna 31 and the second antenna 32 and the vacuum vessel 1, making it easy to efficiently generate a high-frequency magnetic field inside the vacuum vessel 1.

[0024] In the Z-axis direction, a seal portion S1 is interposed between the flange portion 21 and the dielectric plate 22. The seal portion S1 provides a vacuum seal between the flange portion 21 and the dielectric plate 22. The seal portion S1 is used to fix the flange portion 21 and the dielectric plate 22 together.

[0025] <Configuration of First Antenna 31 and Second Antenna 32> The first antenna 31 and the second antenna 32 are provided outside the vacuum vessel 1 and are positioned facing the top wall 1A of the vacuum vessel 1. When a high-frequency current I1 flows through the first antenna 31 and the second antenna 32, a magnetic field is generated, generating plasma P1 inside the vacuum vessel 1. The first antenna 31 and the second antenna 32 are shaped like a rod or a cylinder.

[0026] Both sides of the first antenna 31 and the second antenna 32 are curved in the positive direction of the Z axis, that is, curved in a direction away from the vacuum vessel 1. Specifically, the first antenna 31 includes a first extension portion 311, a second extension portion 312, and a third extension portion 313. The second antenna 32 includes a first extension portion 321, a second extension portion 322, and a third extension portion 323.

[0027] In the first antenna 31, the first extension portion 311 and the third extension portion 313 extend in the Z-axis direction, and the second extension portion 312 is a portion between the first extension portion 311 and the third extension portion 313 and extends in the X-axis direction. The second extension portion 312 extends parallel to the dielectric plate 22.

[0028] The first extension portion 311 has a power feeding end 31A which is one end of the first antenna 31, and the power feeding end 31A is connected to the high-frequency power supply 5 via a matching circuit (not shown). The third extension portion 313 has a terminal end 31B which is the other end of the first antenna 31, and the terminal end 31B is connected to a power feeding end 32A of the second antenna 32 via a wiring 3W. As a result, the first antenna 31 and the second antenna 32 are connected to each other in series, and the number of high-frequency power supplies 5 can be reduced.

[0029] With regard to the second antenna 32, the first extension portion 321 and the third extension portion 323 extend in the Z-axis direction, and the second extension portion 322 is a portion between the first extension portion 321 and the third extension portion 323 and extends in the X-axis direction. The second extension portion 322 extends parallel to the dielectric plate 22.

[0030] The first extension portion 321 has a power supply end portion 32A which is one end portion of the second antenna 32. The third extension portion 323 has a terminal end portion 32B which is the other end portion of the second antenna 32. The terminal end portion 32B is electrically grounded by being connected to the ground G1. The terminal end portion 32B may be connected to the ground G1 via a capacitor, a coil, or the like.

[0031] <Configuration of High Frequency Power Supply 5> The high frequency power supply 5 can pass a high frequency current I1 through the first antenna 31 and the second antenna 32. The frequency of the high frequency is, for example, a common 13.56 MHz, but is not limited to this and may be changed as appropriate. The high frequency power supply 5 is connected to ground. When the high frequency current I1 is introduced into the first antenna 31 and the second antenna 32 by the high frequency power supply 5, a magnetic field is generated around the first antenna 31 and the second antenna 32.

[0032] <Movement of First Antenna 31 and Second Antenna 32> Figure 3 is a diagram for explaining movement of the first antenna 31 and the second antenna 32 shown in Figure 2. In Figure 3, the vacuum vessel 1 and the high-frequency window 2 of the configuration shown in Figure 2 are omitted. The first antenna 31 and the second antenna 32 are configured to be movable in the X-axis direction. The plasma processing apparatus 100 includes a movement mechanism (not shown) that moves each of the first antenna 31 and the second antenna 32 individually in the X-axis direction.

[0033] 3, the first plane SF1 is a plane including the extension direction of the first antenna 31. The extension direction of the first antenna 31 is the extension direction of the first extension portion 311, the second extension portion 312, and the third extension portion 313.

[0034] 3 , the boundary line of the first plane SF1 is indicated by a dashed line. That is, the first plane SF1 is parallel to the XZ plane and is a region surrounded by the dashed line within a plane including the first antenna 31. The boundary line of the first plane SF1 overlaps with the first extension portion 311, the second extension portion 312, and the third extension portion 313. The boundary line of the first plane SF1 forms a rectangle including three sides that overlap with the first extension portion 311, the second extension portion 312, and the third extension portion 313.

[0035] 3, the second plane SF2 is a plane including the extension direction of the second antenna 32. The extension direction of the second antenna 32 is the extension direction of the first extension portion 321, the second extension portion 322, and the third extension portion 323.

[0036] 3 , the boundary line of the second plane SF2 is indicated by a dashed line. That is, the second plane SF2 is a region that is parallel to the XZ plane and includes the second antenna 32, and is surrounded by the dashed line. The boundary line of the second plane SF2 overlaps with the first extension portion 321, the second extension portion 322, and the third extension portion 323. The boundary line of the second plane SF2 forms a rectangle with three sides that overlap with the first extension portion 321, the second extension portion 322, and the third extension portion 323.

[0037] Furthermore, it is assumed that the position of the first antenna 31 is the same and the position of the second antenna 32 is the same among the reference numerals 301 to 303 in Fig. 3. In this case, the region SF3 where the first plane SF1 and the second plane SF2 overlap is the region surrounded by a two-dot chain line, as indicated by the reference numeral 303 in Fig. 3.

[0038] Specifically, region SF3 is a region where first plane SF1 and second plane SF2 overlap when viewed from the Y-axis direction. That is, region SF3 is a region where first plane SF1 and second plane SF2 overlap when viewed from a first direction perpendicular to first plane SF1 or second plane SF2. The first direction is the Y-axis direction.

[0039] In the plasma processing apparatus 100, the first antenna 31 and the second antenna 32 are configured to be movable relative to each other so that the area of ​​the region SF3 can be changed. Specifically, the movement mechanism included in the plasma processing apparatus 100 moves the first antenna 31 and the second antenna 32 individually in the X-axis direction so that the area of ​​the region SF3 can be changed.

[0040] This makes it possible to easily adjust the plasma intensity in the vicinity of the area between the first antenna 31 and the second antenna 32 inside the vacuum vessel 1. Therefore, for the plasma processing apparatus 100 equipped with multiple antennas, the plasma intensity can be adjusted by a simple procedure, and plasma ions can be generated at a uniform density.

[0041] 4 is a cross-sectional view showing an example of a peripheral structure of a first antenna 31 and a second antenna 32 included in a plasma processing apparatus according to a first modification of the present disclosure. The plasma processing apparatus of the first modification differs from the plasma processing apparatus 100 in that it includes a capacitive element 33. In the plasma processing apparatus of the first modification, the first antenna 31 and the second antenna 32 are connected by the capacitive element 33.

[0042] Specifically, the capacitive element 33 is connected between the terminal end 31B of the third extension portion 313 of the first antenna 31 and the power supply end 32A of the first extension portion 321 of the second antenna 32. The capacitive element 33 is a capacitor electrically connected in series with the first antenna 31 and the second antenna 32, which are adjacent to each other. The capacitor is, for example, a vacuum capacitor. Connecting the first antenna 31 and the second antenna 32 via the capacitive element 33 reduces the reactance of the first antenna 31 and the second antenna 32, and also reduces the voltage of the first antenna 31 and the second antenna 32.

[0043] 5 is a perspective view showing an example of a peripheral structure of a first antenna 31P and a second antenna 32P included in a plasma processing apparatus according to Modification 2 of the present disclosure. The plasma processing apparatus of Modification 2 differs from plasma processing apparatus 100 in that first antenna 31 is changed to first antenna 31P, second antenna 32 is changed to second antenna 32P, and a clamping member 34 is provided.

[0044] The first antenna 31P differs from the first antenna 31 in that it includes a fourth extension portion 314. In the first antenna 31P, the first extension portion 311 is longer than the third extension portion 313. The fourth extension portion 314 extends from the third extension portion 313 in the negative direction of the X-axis. The fourth extension portion 314 is shorter than the second extension portion 312.

[0045] In the second modification, the first plane SF1 is a plane including the extension direction of the first antenna 31P. The extension direction of the first antenna 31P is the extension direction of the first extension portion 311, the second extension portion 312, the third extension portion 313, and the fourth extension portion 314.

[0046] The boundary line of the first plane SF1 overlaps with the first extending portion 311, the second extending portion 312, the third extending portion 313, and the fourth extending portion 314. The boundary line of the first plane SF1 forms a quadrangle having four sides that overlap with the first extending portion 311, the second extending portion 312, the third extending portion 313, and the fourth extending portion 314.

[0047] The second antenna 32P differs from the second antenna 32 in that it includes a fourth extension portion 324. In the second antenna 32P, the first extension portion 321 is longer than the third extension portion 323. The fourth extension portion 324 extends from the third extension portion 323 in the positive direction of the X-axis. The fourth extension portion 324 is shorter than the second extension portion 322.

[0048] In addition, in Modification 2, the second plane SF2 is a plane that includes the extension direction of the second antenna 32P. The extension direction of the second antenna 32P is the extension direction of the first extension portion 321, the second extension portion 322, the third extension portion 323, and the fourth extension portion 324.

[0049] The boundary line of second plane SF2 overlaps with first extending portion 321, second extending portion 322, third extending portion 323, and fourth extending portion 324. The boundary line of second plane SF2 forms a quadrangle having four sides that overlap with first extending portion 321, second extending portion 322, third extending portion 323, and fourth extending portion 324.

[0050] In the plasma processing apparatus of Modification 2, the first antenna 31P and the second antenna 32P are in contact with each other. Specifically, the third extension portion 313 of the first antenna 31P and the third extension portion 323 of the second antenna 32P are in contact with each other. This allows power to be fed in series between the first antenna 31P and the second antenna 32P, thereby simplifying the wiring. In other words, wiring connecting the first antenna 31P and the second antenna 32P is no longer necessary.

[0051] The clamping member 34 has a first portion 341 and a second portion 342, and clamps the first antenna 31P and the second antenna 32P between the first portion 341 and the second portion 342. The bolt B1 passes through the first portion 341 and the second portion 342, and fastens the first portion 341 and the second portion 342 to each other by the bolt B1.

[0052] A through hole H1 through which each of the first antenna 31P and the second antenna 32P passes is formed in the clamping member 34. Specifically, a recess 341A is formed in the first portion 341, and a recess 342A is formed in the second portion 342. The first portion 341 and the second portion 342 are fixed to each other by the bolt B1, whereby the recess 341A and the recess 342A form the through hole H1.

[0053] The clamping member 34 rotates around the first antenna 31P and the second antenna 32P as an axis in a direction R1 that intersects with the first plane SF1 or the second plane SF2. The direction R1 is a counterclockwise or clockwise direction relative to the positive direction of the Z axis.

[0054] When the first antenna 31P and the second antenna 32P move in the X-axis direction, the first antenna 31P and the second antenna 32P are displaced in the Y-axis direction, and the clamping member 34 rotates in direction R1. Furthermore, the first antenna 31P and the second antenna 32P move in the X-axis direction while maintaining contact with each other, that is, move parallel to each other. This allows fine adjustment of the plasma ion density distribution.

[0055] 6 is a perspective view showing an example of a peripheral structure of a first antenna 31P and a second antenna 32P included in a plasma processing apparatus according to Modification 3 of the present disclosure. The plasma processing apparatus of Modification 3 differs from the plasma processing apparatus of Modification 2 in that it includes a capacitive element 33 and an insulating member 35.

[0056] The capacitance element 33 is connected to the fourth extension portion 314 of the first antenna 31P via a connecting member 361. The fourth extension portion 314 passes through the connecting member 361. The capacitance element 33 is also connected to the fourth extension portion 324 of the second antenna 32P via a connecting member 362. The fourth extension portion 324 passes through the connecting member 362.

[0057] In the plasma processing apparatus of Modification 2, an insulating member 35 is provided between the first antenna 31P and the second antenna 32P. Specifically, the insulating member 35 is sandwiched by the sandwiching members 34 so as to be located between the first antenna 31P and the second antenna 32P. In other words, the insulating member 35 is sandwiched between the first portion 341 and the second portion 342. The first antenna 31P and the second antenna 32P are insulated from each other by the insulating member 35. The insulating member 35 is a flat insulating plate.

[0058] By providing the insulating member 35 between the first antenna 31P and the second antenna 32P, the current flowing between the first antenna 31P and the second antenna 32P is reduced, and a stable current flows between the first antenna 31P and the second antenna 32P via the capacitance element 33. This makes it possible to make the density of plasma ions more uniform. In addition, the first antenna 31P and the second antenna 32P can be brought closer to each other, allowing for precise adjustment of the plasma ion density.

[0059] Fig. 7 is a diagram showing the peripheral structure of the first antenna 31P and the second antenna 32P shown in Fig. 6 as viewed from the Y-axis direction, and shows how the first antenna 31P and the second antenna 32P move relative to each other. Fig. 8 is a diagram showing the peripheral structure of the first antenna 31P and the second antenna 32P shown in Fig. 7 as viewed from the Z-axis direction, and shows how the first antenna 31P and the second antenna 32P move relative to each other.

[0060] 7 and 8 are examples of a structure for moving the first antenna 31P and the second antenna 32P relative to each other. In one aspect of the present disclosure, various other structures for moving the first antenna 31P and the second antenna 32P relative to each other are also contemplated.

[0061] The view indicated by reference numeral 801 in Fig. 8 corresponds to the view indicated by reference numeral 701 in Fig. 7, and the view indicated by reference numeral 802 in Fig. 8 corresponds to the view indicated by reference numeral 702 in Fig. 7. Furthermore, the view indicated by reference numeral 803 in Fig. 8 corresponds to the view indicated by reference numeral 703 in Fig. 7, and the view indicated by reference numeral 804 in Fig. 8 corresponds to the view indicated by reference numeral 704 in Fig. 7. The views indicated by reference numerals 801 to 804 in Fig. 8 are views of the peripheral structures of the first antenna 31P and the second antenna 32P shown in the corresponding views indicated by reference numerals in Fig. 7, as viewed from the Z-axis direction.

[0062] 7 and 801, the first antenna 31P and the second antenna 32P are in a first state in which the first plane SF1 and the second plane SF2 do not overlap when viewed from the Y-axis direction. The first antenna 31P and the second antenna 32P are arranged side by side in the X-axis direction, and the clamping member 34 and the insulating member 35 are arranged to extend in the Y-axis direction.

[0063] 8, the recess 341A is formed to be longer in the extension direction of the clamping member 34 than the third extension portion 313 of the first antenna 31P. The recess 342A is formed to be longer in the extension direction of the clamping member 34 than the third extension portion 323 of the second antenna 32P.

[0064] When the first antenna 31P moves in the positive direction of the X-axis and the second antenna 32P moves in the negative direction of the X-axis, the first antenna 31P and the second antenna 32P are misaligned with each other in the Y-axis direction, as indicated by reference numeral 702 in Fig. 7 and reference numeral 802 in Fig. 8. At this time, the clamping member 34 and the insulating member 35 rotate in direction R2 around the third extension portions 313, 323. Direction R2 intersects with the first plane SF1 or the second plane SF2 and is counterclockwise with respect to the negative direction of the Z-axis.

[0065] By rotating the clamping member 34 and the insulating member 35, the third extension portion 313 and the third extension portion 323 are arranged side by side in the Y-axis direction, as shown by reference numeral 703 in Fig. 7 and reference numeral 803 in Fig. 8. Furthermore, the first antenna 31P and the second antenna 32P are arranged offset from each other in the Y-axis direction, and the clamping member 34 and the insulating member 35 are arranged to extend in the X-axis direction.

[0066] Furthermore, when viewed from the Y-axis direction, a region SF3 where the first plane SF1 and the second plane SF2 overlap is generated. That is, in the diagrams indicated by reference numeral 703 in Fig. 7 and reference numeral 803 in Fig. 8, the state of the first antenna 31P and the second antenna 32P when viewed from the Y-axis direction is the second state where the first plane SF1 and the second plane SF2 overlap.

[0067] Therefore, when viewed from the Y-axis direction, rotation of the clamping member 34 switches between a first state in which the first plane SF1 and the second plane SF2 do not overlap and a second state in which the first plane SF1 and the second plane SF2 overlap. Therefore, with the simple configuration of the clamping member 34 sandwiching the first antenna 31P and the second antenna 32P, it is possible to change the first plane SF1 and the second plane SF2 from a non-overlapping state to an overlapping state, thereby making it possible to adjust the plasma intensity.

[0068] 7 and 804 in Fig. 8, consider a case in which the first antenna 31P moves in the positive direction of the X-axis and the second antenna 32P moves in the negative direction of the X-axis while the first antenna 31P and the second antenna 32P are misaligned with each other in the Y-axis direction. In this case, as the first antenna 31P and the second antenna 32P move, the area of ​​a region SF3 where the first plane SF1 and the second plane SF2 overlap increases.

[0069] Therefore, when viewed from the axial direction of rotation of the clamping member 34, the through hole H1 is formed in a cross-sectional shape that allows relative movement between the first antenna 31P and the second antenna 32P in the direction D1 in which the area of ​​the region SF3 where the first plane SF1 and the second plane SF2 overlap increases in the second state.

[0070] In other words, the through-hole H1 is formed in the clamping member 34 so that the first antenna 31P and the second antenna 32P can move relatively from the state shown by reference numeral 803 in Fig. 8 to the state shown by reference numeral 804 in Fig. 8. The axial direction of rotation of the clamping member 34 is the Z-axis direction. With the simple configuration in which the through-hole H1 is formed in the clamping member 34, relative movement between the first antenna 31P and the second antenna 32P is possible, and plasma intensity can be adjusted.

[0071] <Summary> A plasma processing apparatus according to aspect 1 of the present invention comprises a vacuum container whose interior is evacuated to a vacuum, and a plurality of antennas that are provided outside the vacuum container and generate plasma inside the vacuum container by passing a high-frequency current through them. When two adjacent antennas among the plurality of antennas are designated as a first antenna and the other as a second antenna, the first antenna and the second antenna are configured to be movable relative to each other so that the area of ​​the region where the first plane and the second plane overlap can be changed when viewed from a first direction perpendicular to a first plane including the extension direction of the first antenna or a second plane including the extension direction of the second antenna.

[0072] In the plasma processing apparatus according to aspect 2 of the present invention, in the above aspect 1, the first antenna and the second antenna may be connected by a capacitive element.

[0073] A plasma processing apparatus according to a third aspect of the present invention is the plasma processing apparatus of the second aspect described above, wherein an insulating member is provided between the first antenna and the second antenna.

[0074] In the plasma processing apparatus according to Aspect 4 of the present invention, in the above-described Aspect 1, the first antenna and the second antenna may be in contact with each other.

[0075] A plasma processing apparatus according to aspect 5 of the present invention is, in any of aspects 1 to 4 above, a plasma processing apparatus in which through holes are formed to pass through each of the first antenna and the second antenna, and further comprising a clamping member that clamps the first antenna and the second antenna, wherein the clamping member rotates in a direction intersecting the first plane or the second plane, with the first antenna and the second antenna as its axis, and the rotation of the clamping member may switch between a first state in which the first plane and the second plane do not overlap when viewed from the first direction, and a second state in which the first plane and the second plane overlap.

[0076] In a plasma processing apparatus according to aspect 6 of the present invention, in the above-mentioned aspect 5, the through hole may be formed in a cross-sectional shape that, when viewed from the axial direction of rotation of the clamping member, enables relative movement between the first antenna and the second antenna in the direction in which the area of ​​the overlapping region between the first plane and the second plane increases in the second state.

[0077] <Additional Notes> The present disclosure is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. Configurations obtained by appropriately combining multiple technical means disclosed in the embodiments are also included in the technical scope of the present disclosure.

[0078] REFERENCE SIGNS LIST 1 vacuum vessel 31, 31P first antenna 32, 32P second antenna 33 capacitance element 34 clamping member 35 insulating member 100 plasma processing apparatus H1 through hole I1 high frequency current P1 plasma SF1 first plane SF2 second plane SF3 region

Claims

1. A plasma processing apparatus comprising: a vacuum vessel whose interior is evacuated to a vacuum; and a plurality of antennas provided outside the vacuum vessel for generating plasma inside the vacuum vessel when a high-frequency current flows through them; wherein, when one of two adjacent antennas among the plurality of antennas is designated as a first antenna and the other as a second antenna, the first antenna and the second antenna are configured to be movable relative to each other so that the area of ​​the region where the first plane and the second plane overlap can be changed when viewed from a first direction perpendicular to a first plane including the extension direction of the first antenna or a second plane including the extension direction of the second antenna.

2. The plasma processing apparatus according to claim 1, wherein the first antenna and the second antenna are connected by a capacitive element.

3. The plasma processing apparatus according to claim 2, wherein an insulating member is provided between the first antenna and the second antenna.

4. The plasma processing apparatus according to claim 1, wherein the first antenna and the second antenna are in contact with each other.

5. A plasma processing apparatus as described in claim 1, further comprising a clamping member that sandwiches the first antenna and the second antenna, and that has through holes formed therethrough to allow the first antenna and the second antenna to pass therethrough, the clamping member rotating in a direction intersecting the first plane or the second plane around the first antenna and the second antenna as an axis, and the rotation of the clamping member switches between a first state in which the first plane and the second plane do not overlap when viewed from the first direction, and a second state in which the first plane and the second plane overlap.

6. A plasma processing apparatus as described in claim 5, wherein the through hole is formed in a cross-sectional shape that allows relative movement between the first antenna and the second antenna in a direction in which the area of ​​the overlapping region between the first plane and the second plane increases in the second state when viewed from the axial direction of rotation of the clamping member.

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