Array structure-based resonator and temperature measurement method

Abstract

The present application relates to the technical field of resonators, and discloses an array structure-based resonator and a temperature measurement method. A vibration unit comprises at least two substructures and a fixing anchor point connected to a substrate; a reference plane is formed for the vibration unit; an in-plane electrode is located in the reference plane; an out-of-plane electrode is located outside the reference plane; the in-plane electrode drives the substructures to vibrate at a first frequency; the out-of-plane electrode is located above and / or below the substructures, and drives the substructures to vibrate at a second frequency; each substructure has a first temperature coefficient of frequency at the first frequency in an in-plane mode; and the substructure has a second temperature coefficient of frequency at the second frequency in an out-of-plane mode. In the array structure-based dual-mode resonator of the present application, the temperature of the resonator is represented on the basis of temperature coefficients of frequency, thereby improving the temperature measurement accuracy of the resonator.

Description

Resonators based on array structures and temperature measurement methods Technical Field

[0001] This application relates to the field of resonator technology, specifically to a resonator based on an array structure and a temperature measurement method. Background Technology

[0002] Clocks provide frequency and time references for digital circuits. Resonators are the basic components of clocks. Resonators, along with peripheral oscillation circuits, amplifier circuits, and filter circuits, can form an oscillator. An oscillator can output a fixed frequency signal. Frequency-temperature drift is a key performance indicator of a resonator. The frequency-temperature coefficient of uncompensated micromechanical resonators is generally quite large. In the industrial temperature range of -40 to 85°C, the output frequency of micromechanical resonators generally exhibits a frequency drift exceeding 3500 ppm, which cannot meet the requirements of practical industrial applications. Therefore, when used in clock applications, micromechanical resonators require temperature compensation. Accurate temperature measurement is particularly important during temperature compensation. The more accurate the temperature measurement, the more accurate the temperature compensation, which in turn can better improve the Q value of the resonator.

[0003] Therefore, how to improve the temperature measurement accuracy of the resonator and thus achieve better temperature compensation has become one of the technical problems that urgently need to be solved by those skilled in the art.

[0004] Summary of the Invention

[0005] In view of this, this application provides a resonator based on an array structure and a temperature measurement method to improve the temperature measurement accuracy of the resonator.

[0006] To achieve the above objectives, based on the first aspect, the technical solution adopted is as follows:

[0007] A resonator based on an array structure, characterized in that it comprises:

[0008] Substrate, vibrating unit, in-plane electrode, and out-of-plane electrode;

[0009] The vibration unit is disposed on the substrate and includes at least two substructures for vibration and fixed anchor points connected to the substrate. The vibration unit forms a reference surface, the in-plane electrode is located inside the reference surface, and the out-of-plane electrode is located outside the reference surface.

[0010] The in-plane electrode maintains a gap with the substructure and drives the substructure to have an in-plane mode that vibrates at a first frequency within the reference surface. The out-of-plane electrode is located above and / or below the substructure and drives the substructure to have an out-of-plane mode that vibrates at a second frequency outside the reference surface. The first frequency has a first frequency temperature coefficient, and the second frequency has a second frequency temperature coefficient.

[0011] Optionally, the substructure includes an oscillator for vibration and a coupling beam that connects the oscillator to the fixed anchor point, the coupling beam being fixed to the substrate via the fixed anchor point.

[0012] Optionally, when there are two substructures, the two substructures are driven by the out-of-plane electrode and the in-plane electrode respectively, and have the out-of-plane mode and the in-plane mode respectively.

[0013] Optionally, the out-of-plane electrodes located above and below the same substructure have opposite phases, and the out-of-plane electrodes located in the same orientation have the same or opposite phases.

[0014] Optionally, the oscillator includes a mass block or a mass ring, and both the in-plane electrode and the out-of-plane electrode include a driving electrode and a sensing electrode.

[0015] Optionally, in the in-plane mode, the first frequency temperature coefficient increases with increasing ion doping concentration of the oscillator; in the out-of-plane mode, the second frequency temperature coefficient decreases with increasing ion doping concentration of the oscillator.

[0016] Optionally, the arrangement of the substructures relative to the fixed anchor point can be a parallel array, a circular array, or a two-dimensional array.

[0017] According to the second aspect, the technical solution adopted is as follows:

[0018] A method for temperature measurement of a resonator based on an array structure, comprising:

[0019] A first frequency is obtained for at least one of the substructures driven by an in-plane electrode and vibrating in an in-plane mode, the first frequency having a first frequency temperature coefficient.

[0020] A second frequency of at least one of the substructures, driven by an out-of-plane electrode and vibrating in an out-of-plane mode, is obtained, the second frequency having a second frequency temperature coefficient;

[0021] The first frequency and the second frequency are input into a frequency synthesizer for processing, and the target temperature is characterized by combining the output value of the frequency synthesizer with the relationship between temperature.

[0022] Optionally, the step of inputting the first frequency and the second frequency into a frequency synthesizer for processing specifically includes: the frequency synthesizer comparing the first frequency and the second frequency to obtain a frequency ratio as the output value.

[0023] Optionally, the step of inputting the first frequency and the second frequency into a frequency synthesizer for processing specifically includes: the frequency synthesizer performing differential processing on the first frequency and the second frequency to obtain the frequency difference as the output value.

[0024] As described above, the array-structure-based resonator and temperature measurement method of the present invention have the following beneficial effects:

[0025] The array-structured resonator includes a substrate, a resonating unit, in-plane electrodes, and out-of-plane electrodes. The in-plane electrodes are located within a reference plane, and the out-of-plane electrodes are located outside the reference plane. The in-plane electrode driving substructure has an in-plane mode that vibrates at a first frequency within the reference plane, and the out-of-plane electrode driving substructure has an out-of-plane mode that vibrates at a second frequency outside the reference plane. By combining the first frequency temperature coefficient of the substructure at the first frequency and the second frequency temperature coefficient of the substructure at the second frequency, the temperature of the resonator is characterized. Furthermore, the sensitivity of the frequency temperature coefficient in characterizing the temperature is improved by considering the change in the frequency temperature coefficient caused by the change in ion doping concentration. Simultaneously, the target temperature is reflected by combining the frequency difference or frequency ratio using a frequency synthesizer, thereby improving the temperature measurement accuracy of the array-structured, dual-mode resonator. Attached Figure Description

[0026] The accompanying drawings, which form part of this specification, are used to provide a further understanding of the embodiments of this application and to illustrate the implementation of this application, together with the textual description, to explain the principles of this application. Obviously, the drawings described below are merely some embodiments of this application.

[0027] Figure 1 is a schematic diagram of the structure of the first type of resonator based on an array structure in this embodiment;

[0028] Figure 2 is a schematic diagram of the second type of resonator based on an array structure in this embodiment;

[0029] Figure 3 is a schematic diagram of the third type of resonator based on an array structure in this embodiment;

[0030] Figure 4 is a structural schematic diagram of the first type of vibration unit in this embodiment;

[0031] Figure 5 is a structural schematic diagram of the second type of vibration unit in this embodiment;

[0032] Figure 6a is a schematic diagram of the frequency and temperature changes of the first seed structure in this embodiment;

[0033] Figure 6b is a schematic diagram of the frequency and temperature changes of the second seed structure in this embodiment;

[0034] Figure 7 is a comparison diagram of the relationship between the first type of frequency change and temperature in this embodiment;

[0035] Figure 8 is a comparison diagram of the relationship between the second type of frequency change and temperature in this embodiment;

[0036] Figure 9 is a comparison of the relationship between the third type of frequency change and temperature in this embodiment;

[0037] Figure 10 is a comparison chart of the relationship between the fourth type of frequency change and temperature in this embodiment;

[0038] Figure 11 is a flowchart of the resonator temperature measurement method based on array structure in this embodiment.

[0039] Component labeling: 1. Substrate; 2. Vibration unit; 21. Substructure; 22. Fixed anchor point; 211. Oscillator; 212. Coupled beam; 3. In-plane electrode; 4. Out-of-plane electrode; 5. Reference plane. Detailed Implementation

[0040] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0041] It should be emphasized that the term "including / comprises" as used herein refers to the presence of a feature, whole, step, or component, but does not exclude the presence or addition of one or more other features, wholes, steps, or components.

[0042] Features described and / or illustrated for one embodiment may be used in the same or similar manner in one or more other embodiments, combined with features in other embodiments, or substituted for features in other embodiments.

[0043] In the detailed description of embodiments of the present invention, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged and not to scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of the present invention. In actual fabrication, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0044] For ease of description, spatial relation terms such as “below,” “under,” “lower than,” “below,” “above,” and “upper” may be used herein to describe the relationship between one element or feature shown in the accompanying drawings and other elements or features. It will be understood that these spatial relation terms are intended to include directions other than those depicted in the drawings for devices in use or operation. Furthermore, when a layer is referred to as being “between” two layers, it may be the only layer between the two layers, or there may be one or more layers in between.

[0045] In the context of this application, the structure described above the first feature may include embodiments in which the first and second features are formed in direct contact, or embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0046] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0047] Please refer to Figures 1-3. This embodiment discloses a resonator based on an array structure. The resonator based on the array structure includes a substrate 1, a vibration unit 2, an in-plane electrode 3, and an out-of-plane electrode 4. The vibration unit 2 is disposed on the substrate 1 and includes at least two substructures 21 for vibration and a fixed anchor point 22 connected to the substrate 1. That is, the fixed anchor point 22 serves as the connection medium between the substructure 21 and the substrate 1, giving the substructure 21 in-plane modes of translational vibration, bending vibration, or contraction vibration in the plane, and out-of-plane modes of vertical translational vibration, vertical bending vibration, or torsional vibration in space.

[0048] In the specific implementation process, the arrangement of the substructures 21 that make up the vibration unit 2 is not restricted. That is, the substructures 21 can be based on the fixed anchor points 22 to form a rectangular array structure, a circular array structure, or a single array structure, etc.

[0049] Furthermore, referring to Figure 2, the vibration unit 2 is formed with a reference surface 5. The reference surface 5 can be the central plane of the substructure 21 and the fixed anchor point 22, and is defined by parallelism with a distance from the substrate 1. The top or bottom surfaces of the substructure 21 and the fixed anchor point 22 are also located on the same plane to better highlight and define the reference surface 5.

[0050] In this embodiment, the in-plane electrode 3 is located inside the reference surface 5, and the out-of-plane electrode 4 is located outside the reference surface 5. That is, the out-of-plane electrode 4 is located above or below the reference surface 5 with a distance maintained between them, and the in-plane electrode 3 is located inside the reference surface 5. The in-plane electrode 3 maintains a gap with the substructure 21 and drives the substructure 21 to vibrate at a first frequency inside the reference surface 5, which is the in-plane mode of the substructure 21. The out-of-plane electrode 4 is located above and / or below the substructure 21, and drives the substructure 21 to vibrate at a second frequency outside the reference surface 5, which is the out-of-plane mode of the substructure 21.

[0051] It should be noted that, based on the reference surface 5, under the drive of the in-plane electrode 3 and the out-of-plane electrode 4, the substructure 21 obviously has two vibration modes, namely the in-plane mode and the out-of-plane mode. In the actual operation of the resonator, either mode can be selected for vibration, or the two modes can act on the substructure 21 separately, or the two modes can act on the substructure 21 simultaneously, so as to achieve the effect of reducing the impedance of the resonator.

[0052] In this embodiment, when the substructure 21 is in a stable vibration state, its in-plane mode has a first frequency temperature coefficient and its out-of-plane mode has a second frequency temperature coefficient. That is, the first and second frequencies of the substructure 21 during vibration can be input into the frequency synthesizer. The frequency synthesizer can differentiate or proportionalize the first and second frequencies, and the temperature can be characterized by the relationship between the obtained frequency difference or frequency ratio and the temperature. This improves the temperature measurement accuracy of the dual-mode resonator based on the array structure, so as to facilitate temperature compensation of the resonator.

[0053] It is understandable that the frequency temperature coefficient is the TCF (Temperature Coefficient of Frequency) coefficient, which is a linear fitting coefficient of the frequency change within the temperature range of the resonator. Therefore, the resonator temperature can be characterized by the frequency difference or frequency ratio between the in-plane and out-of-plane modes and the frequency temperature coefficient.

[0054] In this embodiment, the substructure 21 includes an oscillator 211 for vibration and a coupling beam 212 that connects the oscillator 211 to the fixed anchor point 22. The coupling beam 212 is fixed to the substrate 1 by the fixed anchor point 22 so as to provide a vibration foundation for the oscillator 211 by the fixed anchor point 22.

[0055] In some embodiments, the oscillator 211 may include a mass block or a mass ring to facilitate the spatial arrangement of the substructures 21, wherein the arrangement of the substructures 21 relative to the fixed anchor point 22 may be a parallel array, a circular array, or a two-dimensional array.

[0056] It should be noted that both the in-plane electrode 3 and the out-of-plane electrode 4 include a driving electrode and a sensing electrode, and the driving electrode and the sensing electrode are also equipped with corresponding driving circuits and sensing circuits so that the in-plane electrode 3 and the out-of-plane electrode 4 can function.

[0057] When there are two substructures 21, the resonator can be a single array structure as shown in Figure 1, wherein the two substructures 21 are driven by the out-of-plane electrode 4 and the in-plane electrode 3 respectively, that is, the resonator has out-of-plane mode and in-plane mode respectively.

[0058] In the specific implementation process, referring to Figure 3, there are 12 substructures 21, and the substructures 21 are arranged in a rectangular ring array around the fixed anchor point 22. Among them, the out-of-plane electrodes 4 are distributed above the 8 substructures 21 on the outer layer of the vibration unit 2, and the in-plane electrodes 3 are distributed on the sides of the 4 substructures 21 on the inner layer of the vibration unit 2. When the polarity of the out-of-plane electrodes 4 is the same, such as the out-of-plane electrodes 4 above the reference surface 5 being all positive or all negative, then referring to Figure 4, the 8 substructures 21 driven by the out-of-plane electrodes 4 synchronously perform symmetrical out-of-plane modal vibration outside the reference surface 5, while the 4 substructures 21 driven by the in-plane electrodes 3 perform in-plane modal vibration inside the reference surface 5.

[0059] When the polarities of the out-of-plane electrodes 4 located in the same position on the reference surface 5 are inconsistent, such as the out-of-plane electrodes 4 located above the reference surface 5 including both positive and negative electrodes, referring to Figure 5, the left and right side out-of-plane electrodes 4 of the vibration unit 2 are positive electrodes, and the upper and lower side out-of-plane electrodes 4 of the vibration unit 2 are negative electrodes, then the eight substructures 21 driven by the out-of-plane electrodes 4 will vibrate in opposite directions on the reference surface 5 according to the different polarities of the out-of-plane electrodes 4, which is antisymmetric out-of-plane modal vibration. At the same time, the four substructures 21 driven by the in-plane electrodes 3 will perform in-plane modal vibration in the reference surface 5.

[0060] It should be noted that the out-of-plane electrode 4 is located above or below the reference surface 5 and corresponds to the substructure 21. The out-of-plane electrode 4 can be symmetrical to both sides of the substructure 21. That is, the out-of-plane electrodes 4 located above and below the same substructure 21 have opposite phases. For example, if the out-of-plane electrode 4 located above the substructure 21 is the positive electrode, then the out-of-plane electrode 4 located below the substructure 21 is the negative electrode, and vice versa.

[0061] Furthermore, the polarities of the out-of-plane electrodes 4 located on the same side of the substructure 21 can be the same or different. That is, the phases of the out-of-plane electrodes 4 located above the substructure 21 can be the same or opposite, or the phases of the out-of-plane electrodes 4 located below the substructure 21 can be the same or opposite. That is, the phases of the out-of-plane electrodes 4 located in the same position can be the same or opposite, so that the resonator can have symmetrical out-of-plane modal vibration or antisymmetrical out-of-plane modal vibration.

[0062] The resonator based on the array structure in this embodiment includes a substrate 1, a vibration unit 2, an in-plane electrode 3, and an out-of-plane electrode 4. The in-plane electrode 3 is located inside the reference plane 5, and the out-of-plane electrode 4 is located outside the reference plane 5. The in-plane electrode 3 drives the substructure 21 to have an in-plane mode that vibrates at a first frequency inside the reference plane 5, and the out-of-plane electrode 4 drives the substructure 21 to have an out-of-plane mode that vibrates at a second frequency outside the reference plane 5. By combining the first frequency temperature coefficient of the substructure 21 at the first frequency and the second frequency temperature coefficient of the substructure 21 at the second frequency, the temperature of the resonator is characterized. That is, there are two different modes in a resonator. Due to the difference between the two modes, the frequency-temperature relationship corresponding to the frequency difference or frequency ratio and the frequency-temperature relationship corresponding to the frequency temperature coefficient are used to achieve accurate temperature measurement and temperature compensation.

[0063] To address the technical problems mentioned in the background section, and referring to Figure 11, this embodiment discloses a resonator temperature measurement method based on an array structure, comprising:

[0064] S101, obtain a first frequency of at least one substructure 21 driven by the in-plane electrode 3 and vibrating in an in-plane mode, the first frequency having a first frequency temperature coefficient.

[0065] S102, obtain a second frequency of at least one substructure 21 driven by the out-of-plane electrode 4 and vibrating in an out-of-plane mode, the second frequency having a second frequency temperature coefficient.

[0066] S103, input the first frequency and the second frequency into the frequency synthesizer for processing, and combine the output value of the frequency synthesizer with the relationship between temperature to characterize the target temperature.

[0067] In this embodiment, the first frequency and the second frequency are input into a frequency synthesizer for processing, specifically including: the frequency synthesizer compares the first frequency and the second frequency to obtain a frequency ratio as the output value.

[0068] That is, by using the frequency ratio of in-plane modes to out-of-plane modes, and the correspondence between the frequency ratio and temperature, the target temperature of the resonator can be characterized, and the resonator can be temperature compensated based on the target temperature.

[0069] In some embodiments, the first frequency and the second frequency are input into a frequency synthesizer for processing, specifically including: the frequency synthesizer differentially processes the first frequency and the second frequency to obtain the frequency difference as an output value.

[0070] That is, by using the frequency difference between in-plane and out-of-plane modes, and the correspondence between the frequency difference and temperature, the target temperature of the resonator can be characterized, and the resonator can be temperature compensated based on the target temperature.

[0071] In some embodiments, the frequency temperature coefficient can be changed by adjusting the ion doping concentration, thereby improving the temperature measurement accuracy of the resonator. Referring to Figures 6a and 6b, when the oscillator 211 is low-concentration ion doped, as shown in Figure 6a, the frequency temperature coefficient curves of the in-plane mode and the out-of-plane mode are relatively flat. However, when the oscillator 211 is high-concentration ion doped, as shown in Figure 6b, the frequency temperature coefficient curve of the out-of-plane mode is relatively flat, while the frequency temperature coefficient curve of the in-plane mode has an inflection point. That is, the frequency temperature coefficient can be changed by adjusting the ion doping concentration.

[0072] In specific implementation, before obtaining the first frequency of the substructure 21 driven by the in-plane electrode 3 and vibrating in the in-plane mode, or before obtaining the second frequency of the substructure 21 driven by the out-of-plane electrode 4 and vibrating in the out-of-plane mode, the ion doping of the oscillator 211 can be adjusted or changed. As an example, the oscillator 211 is doped with phosphorus ions at a concentration of 7.5 × e⁻¹. 19 cm -2 and / or 6.6×e 19 cm -2 .

[0073] As an example, referring to Figures 7-9, Figure 7 shows a comparison of the frequency change of the in-plane mode versus temperature when the ion doping concentration is changed at a set frequency of 60MHz for oscillator 211. The horizontal axis represents temperature (°C), and the vertical axis represents the frequency change Δf (ppm). Taking phosphorus ion doping as an example, when the ion doping concentration of oscillator 211 is 6.6 × e 19 cm -2 and 7.5×e 19 cm -2 At that time, the first-order coefficients in the first frequency temperature coefficient of oscillator 211 are -3.7ppm / ℃ and -2.9ppm / ℃, respectively. That is, in the in-plane mode, the first frequency temperature coefficient increases with the increase of the ion doping concentration of oscillator 211. Therefore, by increasing the doping concentration of oscillator 211, the frequency temperature coefficient of oscillator 211 in the in-plane mode can be increased, thereby improving the sensitivity of temperature characterization using the frequency temperature coefficient.

[0074] Referring to Figure 8, which compares the frequency variation of the symmetrical out-of-plane modes of oscillator 211 with temperature at a set frequency of 0.41 MHz, the horizontal axis represents temperature (°C), and the vertical axis represents the frequency variation Δf (ppm). The ion doping concentration of oscillator 211 is 6.6 × e⁻¹. 19 cm -2 and 7.5×e 19 cm -2At that time, the first-order coefficients in the second frequency temperature coefficient of oscillator 211 were -15.0721ppm / ℃ and -15.317ppm / ℃, respectively. Referring to Figure 9, Figure 9 is a comparison of the frequency change of the antisymmetric out-of-plane mode of oscillator 211 with temperature at a set frequency of 0.42MHz. In the figure, the horizontal axis is temperature (℃) and the vertical axis is the frequency change Δf (ppm). When the ion doping concentration of oscillator 211 is 6.6×e 19 cm -2 and 7.5×e 19 cm -2 At that time, the first-order coefficients of the second frequency temperature coefficient of oscillator 211 are -18.971ppm / ℃ and -19.588ppm / ℃, respectively. That is, in the out-of-plane mode, the second frequency temperature coefficient decreases as the ion doping concentration of oscillator 211 increases. Therefore, the change of frequency temperature coefficient can be adjusted by the ion doping concentration of oscillator 211 in the in-plane mode and the out-of-plane mode, respectively, thereby improving the accuracy of resonator temperature detection.

[0075] Furthermore, referring to Figure 10, the oscillator 211 is shown with an ion doping concentration of 7.5 × e⁻¹. 19 cm -2 Under certain conditions, the relationship between the frequency change of the in-plane mode and the out-of-plane mode of the oscillator 211 and temperature is compared. The horizontal axis of the figure is the temperature in °C, and the vertical axis is the frequency change Δf (ppm). It can be clearly seen that the frequency temperature coefficient of the in-plane mode is greater than that of the out-of-plane mode. That is, by increasing the doping concentration, the sensitivity of the resonator temperature measurement can be improved.

[0076] In some embodiments, the oscillator 211 has a fixed ion doping concentration. Under this condition, the frequency temperature coefficient is not affected by the ion doping concentration. The resonator temperature is characterized by the first frequency and the first frequency temperature coefficient of the substructure 21 in the in-plane mode, and the second frequency and the second frequency temperature coefficient of the substructure 21 in the out-of-plane mode.

[0077] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A resonator based on an array structure, characterized in that, include: Substrate, vibrating unit, in-plane electrode, and out-of-plane electrode; The vibration unit is disposed on the substrate and includes at least two substructures for vibration and fixed anchor points connected to the substrate. The vibration unit forms a reference surface, the in-plane electrode is located inside the reference surface, and the out-of-plane electrode is located outside the reference surface. The in-plane electrode maintains a gap with the substructure and drives the substructure to have an in-plane mode that vibrates at a first frequency within the reference surface; the out-of-plane electrode is located above and / or below the substructure and drives the substructure to have an out-of-plane mode that vibrates at a second frequency outside the reference surface; wherein the first frequency has a first frequency temperature coefficient and the second frequency has a second frequency temperature coefficient.

2. The resonator based on an array structure as described in claim 1, characterized in that, The substructure includes a vibrator for vibration and coupling beams that connect the vibrator to the fixed anchor point.

3. The resonator based on an array structure as described in claim 2, characterized in that, When there are two substructures, the two substructures are driven by the out-of-plane electrode and the in-plane electrode respectively, and have the out-of-plane mode and the in-plane mode respectively.

4. The resonator based on an array structure as described in claim 1, characterized in that, The out-of-plane electrodes located above and below the same substructure have opposite phases, and the out-of-plane electrodes located in the same orientation have the same or opposite phases.

5. The resonator based on an array structure as described in claim 2, characterized in that, The oscillator includes a mass block or a mass ring, and both the in-plane electrode and the out-of-plane electrode include a driving electrode and a sensing electrode.

6. The resonator based on an array structure as described in claim 2, characterized in that, In the in-plane mode, the first frequency temperature coefficient increases with increasing ion doping concentration of the oscillator; in the out-of-plane mode, the second frequency temperature coefficient decreases with increasing ion doping concentration of the oscillator.

7. The resonator based on an array structure as described in any one of claims 1-6, characterized in that, The arrangement of the substructures relative to the fixed anchor point can be a parallel array, a circular array, or a two-dimensional array.

8. A method for temperature measurement of a resonator based on an array structure, applied to a resonator based on an array structure as described in any one of claims 1-7, characterized in that, include: A first frequency is obtained for at least one of the substructures driven by an in-plane electrode and vibrating in an in-plane mode, the first frequency having a first frequency temperature coefficient. A second frequency of at least one of the substructures, driven by an out-of-plane electrode and vibrating in an out-of-plane mode, is obtained, the second frequency having a second frequency temperature coefficient; The first frequency and the second frequency are input into a frequency synthesizer for processing, and the target temperature is characterized by combining the output value of the frequency synthesizer with the relationship between temperature.

9. The resonator temperature measurement method based on array structure as described in claim 8, characterized in that, The step of inputting the first frequency and the second frequency into a frequency synthesizer for processing specifically includes: the frequency synthesizer comparing the first frequency and the second frequency to obtain the frequency ratio as the output value.

10. The resonator temperature measurement method based on an array structure as described in claim 8, characterized in that, The step of inputting the first frequency and the second frequency into a frequency synthesizer for processing specifically includes: The frequency synthesizer performs differential analysis on the first frequency and the second frequency to obtain the frequency difference as the output value.

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