Sensor, electronic device, and sensor manufacturing method

Abstract

A sensor, an electronic device, and a sensor manufacturing method, relating to the field of optoelectronic devices, and aiming to manufacture a sensor at low costs. The sensor comprises a detector and a first base, and the detector comprises a substrate, a photosensitive film, and an electrode group. The photosensitive film is provided on one side of the substrate, the light transmittance of the substrate is greater than or equal to a set light transmittance, and the electrode group is provided on the surface of the photosensitive film away from the substrate. The photosensitive film is closer to the first base than the substrate, the electrode group is connected to the first base, and a filling material is provided between the detector and the first base. The light transmittance of a substrate is greater than or equal to a set light transmittance, and incident light can be transmitted to a photosensitive film through the substrate having high light transmittance. An electrode group is connected to a first base, and a filling material is provided between a detector and the first base, so that a contact area between the photosensitive film and air is greatly reduced, and erosion of the photosensitive film by moisture is effectively avoided, and thus a housing of the detector does not need to be assembled, thereby reducing costs.

Description

Sensor, electronic device and preparation method of sensor

[0001] The present application claims priority to the Chinese patent application No. 202410871578.8, filed on June 28, 2024, and entitled "A sensor, an electronic device and a preparation method of the sensor", the whole content of which is incorporated herein by reference. TECHNICAL FIELD

[0002] The present application relates to the field of optoelectronic devices, in particular to a sensor, an electronic device and a preparation method of the sensor. BACKGROUND

[0003] A detector is often used in a sensor. As one of the detectors, a photodetector can convert an optical signal into an electrical signal. An infrared light guide photodetector can realize photodetection in an infrared wave band and is widely used in various fields.

[0004] In order to prevent the core of the infrared light guide photodetector, i.e., the photosensitive film, from being affected by water vapor in the air, the existing infrared light guide photodetector needs to be packaged complicatedly, and the packaging occupies 80% of the cost of the infrared light guide photodetector. SUMMARY

[0005] The embodiments of the present application provide a sensor, an electronic device and a preparation method of the sensor, which are used for simplifying the packaging process of the detector and reducing the preparation cost.

[0006] To achieve the above-mentioned purpose, the embodiments of the present application adopt the following technical solutions:

[0007] In a first aspect, the present application provides a sensor, which comprises a detector and a first circuit board. The detector comprises a substrate, a photosensitive film and an electrode group. The photosensitive film is arranged on one side of the substrate, and the light transmittance of the substrate is greater than or equal to a set light transmittance. The electrode group is arranged on the surface of the photosensitive film away from the substrate. The photosensitive film is close to a first base relative to the substrate, the electrode group is connected with the first base, and a filling material is arranged between the detector and the first base.

[0008] The detector is attached to the first substrate, and the electrode group and the photosensitive film are close to the first substrate, and the substrate is farther away from the first substrate than the electrode and the photosensitive film. Since the light transmittance of the substrate is greater than or equal to the set light transmittance, the incident light can be transmitted to the photosensitive film through the high-transmittance substrate, so as not to affect the normal photoelectric conversion. In this way, the detector can be directly attached to the first substrate with the photosensitive film on the bottom and the substrate on the top. The detector acts as a back-illuminated detector, and the substrate acts as a light window for light incidence, without affecting the normal incidence of light. By connecting the electrode group to the first substrate, the electrical signal transmission between the detector and the first substrate is realized, and the filling material is arranged between the detector and the first substrate, so that the detector can be stably arranged on the first substrate. The photosensitive film is enclosed by the substrate, the filling material and the first substrate, greatly reducing the contact area of the photosensitive film and the air, effectively preventing the erosion and damage of the photosensitive film by water vapor, so that the external packaging shell of the detector is no longer needed to prevent the erosion and damage of the photosensitive film by water vapor, and the electrode group does not need to be connected to the external packaging shell, simplifying the packaging process and reducing the cost.

[0009] As a possible implementation, the electrode group includes a first electrode and a second electrode. The first electrode is arranged on the surface of the photosensitive film away from the substrate, and the second electrode is arranged on the surface of the photosensitive film away from the substrate, and the first electrode and the second electrode have a first interval therebetween. The first interval is provided with a filling material.

[0010] As a possible implementation, a plurality of first connection structures are arranged between the first electrode of the detector and the first substrate, a plurality of second connection structures are arranged between the second electrode of the detector and the first substrate, and the detector and the first substrate are connected through the plurality of first connection structures and the plurality of second connection structures. The plurality of first connection structures are provided with a filling material, and the plurality of second connection structures are provided with a filling material.

[0011] As a possible implementation, the first connection structure includes at least one of a solder ball and a silver paste ball, and the second connection structure includes at least one of a solder ball and a silver paste ball.

[0012] As a possible implementation, the detector further includes a first optical film layer. The first optical film layer includes at least one of an optical cut-off film, an anti-reflection film and an optical filter film, and the first optical film layer is arranged on the side of the substrate away from the photosensitive film.

[0013] As a possible implementation, the detector further includes an optical reflection film, and the optical reflection film is arranged on the side of the photosensitive film away from the substrate.

[0014] As a possible implementation, the optical reflection film and the first substrate are provided with a filling material therebetween.

[0015] As a possible implementation manner, the optical reflection film is a metal film, the optical reflection film is arranged between the first electrode and the second electrode, the optical reflection film has a second interval from the first electrode, and the optical reflection film has a third interval from the second electrode. The second interval is provided with the filling material, and the third interval is provided with the filling material.

[0016] In a second aspect, the present application provides an electronic device, which comprises a second substrate, a sensor as mentioned in the first aspect and possible implementation manners, and a processor. The processor and the sensor are arranged on the second substrate, and the sensor and the processor are connected through the second substrate.

[0017] In a third aspect, the present application provides a preparation method of a sensor, which comprises forming a detector, the detector comprising a substrate, a photosensitive film and an electrode group, the photosensitive film being arranged on one side of the substrate, and the electrode group being arranged on a surface of the photosensitive film away from the substrate; the substrate has a light transmittance greater than or equal to a set light transmittance; and the detector is attached to a first substrate. The photosensitive film of the detector is closer to the first substrate than the substrate, and the electrode group of the detector is connected to the first substrate. The filling material is arranged between the detector and the first substrate.

[0018] As a possible implementation manner, forming the detector comprises providing the substrate, the substrate having a light transmittance greater than or equal to a set light transmittance; forming the photosensitive film on one side of the substrate; and arranging the electrode group on a surface of the photosensitive film away from the substrate.

[0019] As a possible implementation manner, the electrode group comprises a first electrode and a second electrode, and forming the detector further comprises: forming an optical reflection film on a side of the photosensitive film away from the substrate, and in the case that the optical reflection film is a metal film, the optical reflection film is arranged between the first electrode and the second electrode, the optical reflection film has a second interval from the first electrode, and the optical reflection film has a third interval from the second electrode.

[0020] As a possible implementation manner, forming the detector further comprises: forming a first optical film layer on a side of the substrate away from the photosensitive film, the first optical film layer comprising at least one of an optical cut-off film, an anti-reflection film and an optical filter film.

[0021] The beneficial effects of the second aspect and the third aspect can refer to the beneficial effects of the first aspect, which will not be repeated here. BRIEF DESCRIPTION OF DRAWINGS

[0022] The accompanying drawings, which are included to provide a further understanding of the present application, form a part of the present application and illustrate the illustrative embodiments of the present application and its description, which serve to explain the present application, and do not constitute improper limitations on the present application.

[0023] FIG. 1 is a schematic diagram of a basic composition of an infrared light guide type photoelectric detector provided by an embodiment of the present application;

[0024] Fig. 2 is a schematic diagram of a sensor according to an embodiment of the present application;

[0025] Fig. 3 is a schematic diagram of an electrode group connected to a first circuit board according to an embodiment of the present application;

[0026] Fig. 4 is a schematic diagram of a detector according to an embodiment of the present application;

[0027] Fig. 5 is a schematic diagram of the effect of an anti-reflection film according to an embodiment of the present application;

[0028] Fig. 6 is a schematic diagram of another detector according to an embodiment of the present application;

[0029] Fig. 7 is a schematic diagram of the effect of an optical reflection film according to an embodiment of the present application;

[0030] Fig. 8 is a schematic diagram of a detector connected to a first circuit board according to an embodiment of the present application;

[0031] Fig. 9 is a schematic diagram of an electronic device according to an embodiment of the present application;

[0032] Fig. 10 is a flowchart of a method for manufacturing a sensor according to an embodiment of the present application;

[0033] Fig. 10a is a first structure diagram corresponding to a method for manufacturing a detector according to an embodiment of the present application;

[0034] Fig. 10b is a second structure diagram corresponding to a method for manufacturing a detector according to an embodiment of the present application;

[0035] Fig. 10c is a third structure diagram corresponding to a method for manufacturing a detector according to an embodiment of the present application;

[0036] Fig. 10d is a fourth structure diagram corresponding to a method for manufacturing a detector according to an embodiment of the present application;

[0037] Fig. 11 is a flowchart of a method for mounting a detector to a first circuit board according to an embodiment of the present application;

[0038] Fig. 12 is a schematic diagram of a detector mounting according to an embodiment of the present application;

[0039] Fig. 13 is a schematic diagram of a detector filled with a gel according to an embodiment of the present application. DETAILED DESCRIPTION

[0040] In order to make the objects, technical solutions, and advantages of the present application clearer, further described below are the present application with reference to the accompanying drawings and examples. Obviously, the described examples are only some of the examples of the present application, but not all the examples. Based on the examples in the present application, all the other examples obtained by those skilled in the art belong to the protection scope of the present application.

[0041] The terms "first", "second", "third", etc. are used only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second", etc. can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0042] In the description of the present application, it is necessary to point out that, unless otherwise explicitly specified and limited, the terms "connected", "connected" should be understood in a broad sense, for example, it can be fixedly connected, or detachably connected, or integrally connected. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances. In addition, when describing the pipeline, "connected" and "connected" in the present application have the meaning of conducting. The specific meaning should be understood in combination with the context.

[0043] In the embodiments of the present application, the words such as "exemplary" or "for example" are used to represent as an example, illustration or description. Any embodiment or design scheme described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as more preferred or more advantageous than other embodiments or design schemes. In fact, the words such as "exemplary" or "for example" are intended to present the relevant concept in a specific way.

[0044] Sensors often use detectors, and different detectors realize different functions of sensors. For example, a photodetector is included in a photoelectric sensor, and the photodetector is the core of the photoelectric sensor to realize photoelectric conversion function. The photodetector is an electronic device that can convert optical signals into electrical signals by using photoelectric effect, and is widely used in optical communication, spectral analysis, remote sensing, medical imaging and other fields.

[0045] The infrared light guide type photodetector is one of photodetectors, and is mainly used for converting infrared signals into electrical signals. The infrared signal is also called infrared radiation or infrared electromagnetic wave. People cannot observe the existence of infrared signals with naked eyes, but with the help of the infrared light guide type photodetector, people can observe the objects emitting infrared radiation.

[0046] As an example, as shown in FIG. 1, FIG. 1 shows the basic components of an infrared photoconductive photodetector. Referring to FIG. 1, the infrared photoconductive photodetector 100 includes a substrate 1, a photosensitive film 2, and an electrode group 3, which in turn includes a first electrode 31 and a second electrode 32. Among them, the substrate 1 plays a supporting role and provides a substrate for the growth of the photosensitive film 2. The photosensitive film 2 is the core of the infrared photoconductive photodetector 100, and the light represented by the arrow in FIG. 1 is incident on the photosensitive film 2, which is converted into an electrical signal after photoelectric conversion and output to the first electrode 31 and the second electrode 32.

[0047] The photosensitive film 2 as the core of the infrared photoconductive photodetector 100 is easily affected by water vapor in the air. As shown in FIG. 1, once the photosensitive film 2 is exposed to water vapor in the air for a long time, its photoelectric conversion capability will be greatly reduced. In order to protect the photosensitive film 2 from being eroded by water vapor in the air, the infrared photoconductive photodetector is often packaged in the process.

[0048] As an example, the scheme for packaging the infrared photoconductive photodetector is usually to use TO (Transistor Outline, transistor outline) can packaging. By setting the can around the infrared photoconductive photodetector to block the erosion of water vapor to the photosensitive film, and opening a light window at the top of the can to allow light to be incident on the photosensitive film through the light window, so as to ensure the normal realization of photoelectric conversion function.

[0049] However, the cost of packaging the infrared photoconductive photodetector is high, accounting for more than 80% of the entire production cost. In view of this, the present application provides a sensor which simplifies the packaging process, does not need to package the detector with an additional can, and reduces the cost.

[0050] As an example, as shown in FIG. 2, FIG. 2 shows the composition of the sensor. Referring to FIG. 2, the sensor includes a detector 200 and a first substrate 4, and the detector 200 in turn includes a substrate 1, a photosensitive film 2, and an electrode group 3. The detector 200 is attached to the first substrate 4, the electrode group 3 is connected to the first substrate 4, and a filling material 5 is provided between the detector 200 and the first substrate 4.

[0051] Among them, the photosensitive film 2 is arranged on one side of the substrate 1, and the electrode group 3 is arranged on the surface of the photosensitive film 2 away from the substrate 1. The photosensitive film 2 is close to the first substrate 4 relative to the substrate 1.

[0052] The substrate can be any material capable of collecting, processing and transmitting electrical signals, and the filling material can be any material capable of solidification from liquid to solid, i.e., being in liquid state before filling and being in solid state after filling. Common filling materials include non-conductive adhesive materials such as epoxy resin, silicone resin and acrylic resin. In some embodiments, the substrate is a circuit board and the filling material is a gel. Hereinafter, the circuit board is taken as the substrate (i.e., the first substrate is a first circuit board and the second substrate is a second circuit board) and the gel is taken as the filling material.

[0053] It should be noted that the substrate 1 shown in FIG. 2 has a transmittance greater than or equal to a set transmittance, i.e., the application has requirements for the transmittance of the substrate 1, and the transmittance of the substrate 1 should not affect the realization of normal photoelectric conversion. For example, if the set transmittance is 80%, the transmittance of the selected substrate 1 needs to be above 80%. As a possible implementation, sapphire, quartz, calcium fluoride and other materials with high transmittance in the visible and infrared bands can be selected as the substrate.

[0054] The electrode group 3 is arranged on the surface of the photosensitive film 2 away from the substrate 1, i.e., the electrode group 3 is connected with the photosensitive film 2, and the electrode group 3 is connected with the first circuit board 4, thereby realizing the electrical connection between the detector and the first circuit board 4. During the working process of the detector, when the light is incident on the photosensitive film 2 through the highly transmissive substrate 1, the photosensitive film 2 converts the optical signal into an electrical signal which is led out to the first circuit board 4 through the electrodes. The first circuit board 4 usually further has other electronic elements, and the interfaces of these electronic elements are connected with the first electrode 31 and the second electrode 32. For example, the first circuit board 4 further has a processor, the first interface of the processor is electrically connected with the first electrode 31, and the second interface of the processor is electrically connected with the second electrode 32. The processor makes corresponding control according to the electrical signals received by the first interface and the second interface.

[0055] As can be seen from FIG. 2, taking the distance between the internal components of the detector 200 and the first circuit board 4 as a reference, from near to far, there are the electrode group 3, the photosensitive film 2 and the substrate 1. Since the transmittance of the substrate 1 is greater than or equal to the set transmittance, the incident light (see the arrow shown in FIG. 2) can be transmitted to the photosensitive film 2 through the highly transmissive substrate 1, thereby not affecting the realization of normal photoelectric conversion. In this way, the detector 200 can be directly mounted on the first circuit board 4 with the photosensitive film 2 below and the substrate 1 above. The detector 200 is a back-illuminated detector, and the substrate 1 is a light window for light incidence, which does not affect the normal incidence of light.

[0056] The electrode group 3 is connected with the first circuit board 4, so that the electrical signal transmission between the detector and the first circuit board is realized. Meanwhile, the detector 200 and the first circuit board 4 are filled with the colloid, so that the detector 200 can be stably arranged on the first circuit board 4. The photosensitive film 2 is enclosed by the substrate 1, the colloid 5 and the first circuit board 4, so that the contact area between the photosensitive film 2 and the air is greatly reduced, and the water vapor erosion and damage to the photosensitive film 2 are effectively prevented. Therefore, the outer package shell of the detector 200 is no longer needed to prevent the water vapor erosion and damage to the photosensitive film 2, and the electrical signal transmitted by the electrode group 3 does not need to be led out through the shell lead, so that the packaging process is simplified and the cost is reduced.

[0057] As a possible implementation manner, as shown in FIG. 2, the electrode group 3 includes a first electrode 31 and a second electrode 32. The first electrode 31 is arranged on the surface of the photosensitive film 2 away from the substrate 1, and the second electrode 32 is arranged on the surface of the photosensitive film 2 away from the substrate 1. The first electrode 31 and the second electrode 32 have a first interval L1 therebetween, and the first interval L1 is filled with the colloid 5.

[0058] The photosensitive film 2 exposed between the first electrode 31 and the second electrode 32 is surrounded by the colloid 5, so that the contact area between the photosensitive film 2 and the water vapor in the air is reduced, and the water vapor erosion and damage to the photosensitive film 2 are effectively prevented.

[0059] The first electrode 31 and the second electrode 32 are in contact with the photosensitive film 2, and the first electrode 31 and the second electrode 32 have a first interval therebetween, i.e., the two electrodes are not in contact with each other. When the photosensitive film 2 is irradiated by the incident light, the electrons in the photosensitive film 2 absorb the photon energy in the incident light, are excited from the valence band to the conduction band, create electron-hole pairs, form photo-generated carriers, and cause the voltage change between the first electrode 31 and the second electrode 32 of the detector 200. Since the first electrode 31 and the second electrode 32 are connected with the first circuit board 4, the detector 200 can transmit the electrical signal to the first circuit board 4 through the first electrode 31 and the second electrode 32.

[0060] Exemplarily, the first electrode 31 and the second electrode 32 are arranged in parallel and are respectively located at the edge positions of the photosensitive film 2. The first electrode 31 and the second electrode 32 have a first interval therebetween, so that the photosensitive film 2 has sufficient area for receiving the light signal, thereby improving the efficiency of the detector.

[0061] As a possible implementation, a plurality of first connecting structures are arranged between the first electrode 31 of the probe 200 and the first circuit board 4, and a plurality of second connecting structures are arranged between the second electrode 32 of the probe 200 and the first circuit board 4, and the probe 200 is connected to the first circuit board 4 through the plurality of first connecting structures and the plurality of second connecting structures. The plurality of first connecting structures are filled with a colloid, and the plurality of second connecting structures are filled with a colloid.

[0062] As a possible implementation, the first connecting structure includes at least one of a solder ball and a silver paste ball, and the second connecting structure includes at least one of a solder ball and a silver paste ball. For example, as shown in FIG. 3, FIG. 3 shows the connection between the electrode group and the first circuit board. Referring to FIG. 3, a plurality of first connecting structures are arranged between the first electrode 31 of the probe and the first circuit board, and the first connecting structure is taken as a solder ball. Specifically, the first electrode 31 has a first solder ball 61, a second solder ball 62, and a third solder ball 63. A plurality of second connecting structures are arranged between the second electrode 32 of the probe and the first circuit board, and the second connecting structure is also taken as a solder ball. Specifically, the second electrode 32 has a fourth solder ball 71, a fifth solder ball 72, and a sixth solder ball 73. The first solder ball 61, the second solder ball 62, and the third solder ball 63 are filled with a colloid 5, and the fourth solder ball 71, the fifth solder ball 72, and the sixth solder ball 73 are also filled with a colloid 5.

[0063] The first electrode 31 is connected to the first circuit board 4 through the plurality of first connecting structures, specifically, the first electrode 31 is connected to the first circuit board 4 through the first solder ball 61, the second solder ball 62, and the third solder ball 63, and the colloid 5 located between the gaps of the three solder balls. The second electrode 32 is connected to the first circuit board 4 through the second connecting structure, specifically, the second electrode 32 is connected to the first circuit board 4 through the fourth solder ball 71, the fifth solder ball 72, and the sixth solder ball 73, and the colloid 5 located between the gaps of the three solder balls.

[0064] It should be noted that the number of first connecting structures and second connecting structures shown in FIG. 3 is only used for illustration, and the number of first connecting structures and second connecting structures is not limited in the present application, and the materials of the first connecting structures and the second connecting structures can be the same or different. Similarly, in terms of shape design, they can adopt spherical materials, or other shapes such as cubes, cylinders, etc., and the present application does not make any limitation thereon, for example, the first connecting structure adopts a solder ball, and the second connecting structure adopts a silver paste ball. In addition, the same connecting structure can also use different materials, for example, a part of the first connecting structure adopts a solder ball, and another part adopts a silver paste ball, and a part of the second connecting structure adopts a solder ball, and another part adopts a silver paste ball.

[0065] As a possible implementation, the first connecting structure further comprises at least one of an indium ball, a copper ball and a gold ball, and the second connecting structure further comprises at least one of an indium ball, a copper ball and a gold ball.

[0066] In some embodiments, as shown in FIG. 4, the detector 200 further comprises a first optical film layer 8. The first optical film layer 8 comprises at least one of an optical cutoff film, an anti-reflection film and an optical filter film, and the first optical film layer 8 is arranged on the side of the substrate 1 away from the photosensitive film 2.

[0067] It should be noted that in FIG. 4, only the first optical film layer 8 completely covers the surface of the substrate 1 is taken as an example for illustration, but the present application does not limit the overlap ratio of the first optical film layer 8 and the substrate 1.

[0068] In actual application, there may be a case that the photoelectric conversion characteristics of the light before a certain waveband need to be measured by the detector. At this time, the optical cutoff film can be arranged on the side of the substrate 1 away from the photosensitive film 2. The optical cutoff film can cut off the light waves of a specific waveband (i.e. the aforementioned certain waveband) to pass through, for controlling the wavelength range of the light. The optical cutoff film can be designed and customized in the visible light and infrared light spectrum, thereby effectively preventing the unnecessary light signals, realizing the function of the detector only accepting the light before the waveband, avoiding the interference of the light signals of the remaining wavebands on the detection function of the detector, and improving the detection efficiency and accuracy of the detector.

[0069] For example, as shown in FIG. 5, FIG. 5 shows the function of the anti-reflection film. Referring to FIG. 5a, when the light (i.e. the incident light in FIG. 5) is incident on the substrate 1, a part of the light will inevitably be reflected (i.e. the reflected light in FIG. 5). These light cannot be refracted through the substrate 1 to the photosensitive film, thus cannot achieve 100% photoelectric conversion. Some light cannot be refracted through the substrate 1 to the photosensitive film. The refracted light in FIG. 5 is the light that can be refracted through the substrate 1 to the photosensitive film. When the first optical film layer 8 arranged on the detector 200 comprises an anti-reflection film, as shown in FIG. 5b, the anti-reflection film can reduce the reflection of the incident light on the substrate 1, so that more incident light is transmitted through the substrate 1 to the photosensitive film, thereby improving the light signal acceptance rate and detection efficiency of the detector.

[0070] In practical applications, there can also be a case where the photoelectric conversion characteristics of light of a certain waveband need to be measured by the detector. In this case, an optical filter film can be arranged on the side of the substrate 1 away from the photosensitive film 2. The optical filter film can filter out the desired specific wavelength of light spectrum according to different designs and different materials, and prevent other wavelengths of light from passing through, for selectively transmitting or reflecting light within a specific wavelength range, so as to realize the function of the detector only accepting light of the specific waveband, avoid the interference of the remaining waveband of light signal on the detection function of the detector, and improve the detection efficiency and accuracy of the detector.

[0071] According to the needs of actual application scenarios, different functions can be realized by different combinations of the optical cutoff film, the anti-reflection film and the optical filter film. It should be noted that the present application does not limit the arrangement order of the plurality of optical films in the first optical film layer. For example, the first optical film layer includes the optical cutoff film and the anti-reflection film. Whether the optical cutoff film or the anti-reflection film is closer to the photosensitive film does not affect the function of the detector.

[0072] In some embodiments, as shown in FIG. 6, the detector 200 further includes an optical reflection film 9 arranged on the side of the photosensitive film 2 away from the substrate 1.

[0073] As a possible implementation manner, in order to make the detector 200 have higher efficiency, the overlapping ratio of the optical reflection film 9 and the photosensitive film 2 is more than 70%.

[0074] For example, as shown in FIG. 7, FIG. 7 shows the function of the optical reflection film. Referring to FIG. 7a, when the incident light is transmitted to the photosensitive film 2 through the substrate 1, part of the light cannot be utilized by the photosensitive film 2, that is, the transmitted light in FIG. 7a. The refracted light in FIG. 7 is the light that can be refracted to the photosensitive film through the substrate 1. In order to improve the photoelectric conversion efficiency of the detector, the proportion of the transmitted light is as small as possible. As shown in FIG. 7b, the optical reflection film 9 can be arranged on the side of the photosensitive film 2 away from the substrate 1. The optical reflection film changes the light path of the transmitted light, so that the transmitted light that cannot be utilized by the photosensitive film 2 is reflected by the optical reflection film 9 and then incident on the photosensitive film 2, thereby improving the photoelectric conversion efficiency of the detector. The reflected light shown in FIG. 7b is the light that is reflected by the optical reflection film 9 and then incident on the photosensitive film 2.

[0075] In the case where the detector further includes the optical reflection film, as shown in FIG. 8, the detector and the first circuit board 4 are filled with the colloid 5, specifically, the optical reflection film 9 and the first circuit board 4 are filled with the colloid 5.

[0076] It should be understood that the material constituting the optical reflecting film can be metal, for example, the optical reflecting film comprises germanium (Ge), or non-metal, for example, the optical reflecting film comprises zinc sulfide (ZnS), silicon oxide (SiOx). When the optical reflecting film is a metal film, referring to FIG. 8, the optical reflecting film 9 is arranged between the first electrode 31 and the second electrode 32, the optical reflecting film 9 has a second interval L2 with the first electrode 31, the optical reflecting film 9 has a third interval L3 with the second electrode 32, the second interval L2 is filled with the colloid 5, and the third interval L3 is filled with the colloid 5.

[0077] The second interval L2 and the third interval L3 avoid the contact between the optical reflecting film 9 and the metal first electrode 31 and the second electrode 32. By filling the colloid 5 in the second interval L2 and the third interval L3, the photosensitive film 2 exposed between the optical reflecting film 9 and the first electrode 31, and the photosensitive film 2 exposed between the optical reflecting film 9 and the second electrode 32 are surrounded by the colloid 5, which reduces the contact area between the photosensitive film 2 and the water vapor in the air, and effectively prevents the erosion and damage of the water vapor to the photosensitive film 2.

[0078] When the optical reflecting film 9 is a non-metal film, the distance between the optical reflecting film 9 and the first electrode 31 is not limited, and the distance between the optical reflecting film 9 and the second electrode 32 is not limited. At this time, the colloid 5 is filled between the optical reflecting film 9 and the first circuit board 4 and between the electrode group 3 and the first circuit board 4.

[0079] The application further provides an electronic device, for example, as shown in FIG. 9. Referring to FIG. 9, the electronic device comprises a second circuit board 40, a sensor 50 and a processor 300. The sensor 50 and the processor 300 are arranged on the second circuit board 40, and the sensor 50 and the processor 300 are connected through the second circuit board 40.

[0080] As a possible implementation, the second circuit board is the first circuit board, that is, the processor 300 is arranged on the first circuit board in the sensor 50. In this case, the first circuit board is provided with a detector and a processor, and the detector and the processor are connected through the first circuit board.

[0081] For example, the electronic device can be a facsimile machine, a copier, a liquid crystal display, an infrared thermometer, etc. Taking the infrared thermometer as an example, the higher the temperature, the stronger the infrared radiation, and the greater the electric signal converted by the detector. The processor compares the received electric signal with a preset value, and when the received electric signal is greater than the preset value, it indicates that the temperature is higher than the warning value, and the infrared thermometer alarms.

[0082] The application further provides a preparation method of a sensor, for example, as shown in FIG. 10. Referring to FIG. 10, the method comprises:

[0083] S1: forming a detector.

[0084] The detector comprises a substrate, a photosensitive film and an electrode group, the photosensitive film is arranged on one side of the substrate, and the electrode group is arranged on the surface of the photosensitive film away from the substrate; the light transmittance of the substrate is greater than or equal to a set light transmittance.

[0085] For example, as shown in FIG. 10a, FIGS. 10a-10d show the structure corresponding to the manufacturing method of the detector. Referring to FIG. 10a, the first step of manufacturing the detector is to prepare a substrate 1 with a light transmittance greater than or equal to a set light transmittance. As a possible implementation, sapphire, quartz, calcium fluoride and other materials with high light transmittance in the visible and infrared bands can be selected as the substrate 1.

[0086] Referring to FIG. 10b, a photosensitive film 2 is formed on one side of the substrate 1. As a possible implementation, the photosensitive film 2 is a lead salt film, and the material of the lead salt film can be at least one of lead selenide (PbSe), lead sulfide (PbS), lead telluride (PbTe) and lead selenide sulfide (PbSeS). The following three methods can be used to grow the lead salt film on the substrate 1:

[0087] Chemical bath deposition method: taking PbSe as an example, a lead source, a selenium source, an alkali source, an iodine source and deionized water are prepared into a mother liquor for film deposition according to a fixed ratio, and the substrate in FIG. 10a is placed in the mother liquor at an angle of 70° with the bottom of the container containing the mother liquor. In the case where the ambient temperature is set to 60-90℃, the substrate is taken out after 3h-3.5h of standing and washed with deionized water. The prepared PbSe film is placed in a sealed sensitization chamber, the temperature in the chamber is set to 380℃, and oxygen and oxygen / iodine vapor mixed gas are sequentially introduced into the sealed chamber, and the sensitization of the PbSe film is completed. The lead source includes but is not limited to lead acetate, lead chloride and lead nitrate; the selenium source includes but is not limited to selenium powder and selenium urea; the alkali source includes but is not limited to sodium hydroxide, potassium hydroxide, sodium carbonate and lithium hydroxide; the iodine source includes but is not limited to iodine, potassium iodide, ammonium iodide and potassium iodate.

[0088] Quantum dot spin coating method: taking PbSe quantum dots as an example, PbSe quantum dots are prepared by hot injection, and are configured into an ink of 50 mg / ml. The quantum dot ink is spin-coated onto the substrate surface in FIG. 10a to form a film by layer-by-layer method, and then the quantum dot film after spin coating is annealed at 100°C for 2 min on a heating plate to obtain a lead salt film. The quantum dots include different sizes of quantum dots with an absorption wavelength of 900-2000 nm, and the quantum dot ink solvent includes but is not limited to n-hexane, n-octane, n-heptane, nonane, butylamine, toluene, chloroform, N,N-dimethylformamide, dimethyl sulfoxide.

[0089] Physical vapor deposition: taking PbSe as an example, a PbSe block material with a purity greater than 99.99% is placed in a molybdenum boat as a raw material, the molybdenum boat is placed in a vacuum chamber with a vacuum degree of 2E-4 torr, and a substrate in FIG. 10a is fixed on a rotating disc above the vacuum chamber. An evaporation rate of 2-4 A / s is used to complete the evaporation of the PbSe film to obtain a PbSe film. The prepared PbSe film is placed in a sealed sensitization chamber, the temperature in the chamber is set to 380°C, and oxygen and oxygen / iodine vapor mixed gas are sequentially introduced into the sealed chamber. The PbSe film is sensitized.

[0090] Referring to FIG. 10c, an electrode group 3 is formed on the surface of the photosensitive film 2 away from the substrate 1, the electrode group 3 includes a first electrode 31 and a second electrode 32, and the first electrode 31 and the second electrode 32 have a first interval therebetween. The first electrode 31 and the second electrode 32 are metal electrodes, and the composition materials of the first electrode 31 and the second electrode 32 include but are not limited to gold, silver, chromium, nickel, and indium. The preparation methods of the first electrode 31 and the second electrode 32 include but are not limited to thermal evaporation deposition, electron beam deposition, magnetron sputtering deposition, and physical vapor deposition.

[0091] As a possible implementation manner, forming the detector further includes: forming an optical reflection film on the side of the photosensitive film away from the substrate. In the case that the optical reflection film is a metal film, as shown in FIG. 10d, the optical reflection film 9 is arranged between the first electrode 31 and the second electrode 32. The optical reflection film 9 has a second interval with the first electrode 31, and the optical reflection film 9 has a third interval with the second electrode 32.

[0092] As a possible implementation manner, forming the detector further includes: forming a first optical film layer on the side of the substrate away from the photosensitive film. As shown in FIG. 10d, the first optical film layer includes at least one of an optical cut-off film, an anti-reflection film, and an optical filter film.

[0093] The preparation of the first optical film layer 8 and the optical reflection film 9 includes, but is not limited to, thermal evaporation deposition, electron beam deposition, magnetron sputtering deposition, and physical vapor deposition.

[0094] It should be noted that the present application does not limit the order of forming the electrode group, the optical reflection film, and the first optical film layer. In addition, when the optical reflection film is a metal film, the optical reflection film has a second spacing from the first electrode and a third spacing from the second electrode. When the optical reflection film is a non-metal film, the optical reflection film can be in contact with the first electrode, and the optical reflection film can also be in contact with the second electrode.

[0095] S2: attaching the detector to the first substrate.

[0096] The formed detector often needs to be used in cooperation with other electrical elements. The detector and other electrical elements need to be fixed on the first substrate for connection. For example, the substrate is a circuit board. When attaching the detector to the first circuit board, the detector shown in FIG. 10c or FIG. 10d needs to be inverted, so that the photosensitive film of the detector is close to the first circuit board relative to the substrate, and the incident light is incident from the highly transparent substrate. Referring to FIG. 11, S2, attaching the detector to the first circuit board includes:

[0097] S21: connecting the electrode group of the detector to the first substrate.

[0098] For example, as shown in FIG. 12, first, the detector is inverted, and a plurality of first synaptic structures are arranged on at least one of the first electrode of the detector and the first circuit board, and a plurality of second synaptic structures are arranged on at least one of the second electrode of the detector and the first circuit board, and the detector and the first circuit board are connected through the plurality of first synaptic structures and the plurality of second synaptic structures. As a possible implementation, as shown in FIG. 12, a plurality of indium balls are arranged on the first electrode and the second electrode of the detector, and the detector is connected to the first circuit board 4 through the indium balls.

[0099] Specifically, taking the first synaptic structure and the second synaptic structure as indium balls as an example for description:

[0100] In some embodiments, the first electrode of the probe is provided with a plurality of first synaptic structures, the second electrode of the probe is provided with a second synaptic structure, and the electrode group of the probe is connected to the first circuit board in particular by the following manner: the indium ball on the first electrode is contacted with the first circuit board, melted by a soldering iron, and after the melted indium ball is cooled and solidified, the connection between the first electrode and the first circuit board is realized. The cooled and solidified indium ball connecting the first electrode and the first circuit board is a first connection structure, and the indium ball provided on the first electrode and not melted is a first synaptic structure. Similarly, the indium ball on the second electrode is contacted with the first circuit board, melted by a soldering iron, and after the melted indium ball is cooled and solidified, the connection between the second electrode and the first circuit board is realized. The cooled and solidified indium ball connecting the second electrode and the first circuit board is a second connection structure, and the indium ball provided on the second electrode and not melted is a second synaptic structure.

[0101] In other embodiments, the first circuit board is provided with a plurality of first synaptic structures and a plurality of second synaptic structures, and the electrode group of the probe is connected to the first circuit board in particular by the following manner: the indium ball on the first circuit board is contacted with the first electrode, melted by a soldering iron, and after the melted indium ball is cooled and solidified, the connection between the first electrode and the first circuit board is realized. The cooled and solidified indium ball connecting the first electrode and the first circuit board is a first connection structure, and the indium ball provided on the first circuit board and not melted is a first synaptic structure. Similarly, the indium ball on the first circuit board is contacted with the second electrode, melted by a soldering iron, and after the melted indium ball is cooled and solidified, the connection between the second electrode and the first circuit board is realized. The cooled and solidified indium ball connecting the second electrode and the first circuit board is a second connection structure, and the indium ball provided on the first circuit board and not melted is a second synaptic structure.

[0102] In some embodiments, the first circuit board is provided with a plurality of first synaptic structures, and the first electrode of the detector is also provided with a plurality of first synaptic structures. The first circuit board is further provided with a plurality of second synaptic structures, and the second electrode of the detector is also provided with a plurality of second synaptic structures. The electrode group of the detector is connected with the first circuit board by the following method: the indium balls on the first circuit board are contacted with the indium balls on the first electrode, and the indium balls are melted by a soldering iron. After the indium balls are cooled and solidified, the first electrode and the first circuit board are connected. The cooled and solidified indium balls connecting the first electrode and the first circuit board are the first connection structures, and the indium balls on the first circuit board and the first electrode which are not melted are the first synaptic structures. Similarly, the indium balls on the first circuit board are contacted with the indium balls on the second electrode, and the indium balls are melted by a soldering iron. After the indium balls are cooled and solidified, the second electrode and the first circuit board are connected. The cooled and solidified indium balls connecting the second electrode and the first circuit board are the second connection structures, and the indium balls on the first circuit board and the second electrode which are not melted are the second synaptic structures.

[0103] In the case where the first synaptic structures include solder balls, silver paste balls, metal indium balls, copper balls and gold balls, and the second synaptic structures include solder balls, silver paste balls, metal indium balls, copper balls and gold balls, the first circuit board is provided with a plurality of first synaptic structures and a plurality of second synaptic structures, and the first circuit board is provided with a plurality of first synaptic structures, and the first electrode of the detector is also provided with a plurality of first synaptic structures. The first circuit board is further provided with a plurality of second synaptic structures, and the second electrode of the detector is also provided with a plurality of second synaptic structures. Similar to the above description, details are not repeated here.

[0104] S22: A filling material is arranged between the detector and the first substrate.

[0105] For example, as shown in FIG. 13, when the detector is provided with the optical reflection film 9, the filling material 5 is arranged between the optical reflection film 9 and the first circuit board 4 and between the electrode group 3 and the gap of the first circuit board. For example, the gap between the optical reflection film 9 and the first circuit board 4 and the electrode group 3 and the first circuit board 4 is filled with the colloid 5. When the detector is not provided with the optical reflection film 9, the colloid 5 is filled between the photosensitive film 2 and the first circuit board 4 and between the electrode group 3 and the gap of the first circuit board 4, and the colloid is solidified. Thus, the area of the photosensitive film 2 exposed to the air is reduced, and the photosensitive film 2 is prevented from being eroded by the water vapor in the air as much as possible.

[0106] Finally, the remaining electronic devices are arranged on the first circuit board, and the remaining electronic devices are connected with the detector. For example, a processor is welded on the first circuit board, and the processor is electrically connected with the detector.

[0107] Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.

[0108] Finally, it should be noted that the above-mentioned merely is a preferred embodiment of the present application, but the protection scope of the present application is not limited to this, any change or replacement within the technical scope disclosed by the present application should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

[0109] The above-mentioned merely is a preferred embodiment of the present application, but the protection scope of the present application is not limited to this, any change or replacement within the technical scope disclosed by the present application should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A sensor, characterized in that, The sensor includes: a detector and a first substrate; The detector includes: Substrate; the transmittance of the substrate is greater than or equal to a set transmittance; A photosensitive film; the photosensitive film is disposed on one side of the substrate; Electrode assembly; the electrode assembly is disposed on the surface of the photosensitive film away from the substrate; The photosensitive film is closer to the first substrate than the substrate, the electrode assembly is connected to the first substrate, and a filling material is disposed between the detector and the first substrate.

2. The sensor according to claim 1, characterized in that, The electrode assembly includes a first electrode and a second electrode; The first electrode and the second electrode have a first gap, and the first gap is provided with the filling material.

3. The sensor according to claim 2, characterized in that, A plurality of first connection structures are provided between the first electrode of the detector and the first substrate, and a plurality of second connection structures are provided between the second electrode of the detector and the first substrate. The detector is connected to the first substrate through the plurality of first connection structures and the plurality of second connection structures. The filling material is disposed between the plurality of first connecting structures and between the plurality of second connecting structures.

4. The sensor according to claim 3, characterized in that, The first connection structure includes at least one of solder balls and silver paste balls, and the second connection structure includes at least one of solder balls and silver paste balls.

5. The sensor according to any one of claims 1-4, characterized in that, The detector further includes an optical reflective film disposed on the side of the photosensitive film away from the substrate.

6. The sensor according to claim 5, characterized in that, A filler material is disposed between the optical reflective film and the first substrate.

7. The sensor according to claim 5, characterized in that, The electrode assembly includes a first electrode and a second electrode. The optical reflective film is a metal film. The optical reflective film is disposed between the first electrode and the second electrode. There is a second gap between the optical reflective film and the first electrode, and a third gap between the optical reflective film and the second electrode. The second interval is provided with a filling material, and the third interval is provided with a filling material.

8. The sensor according to any one of claims 1-4, characterized in that, The detector further includes a first optical film layer, which includes at least one of an optical cutoff film, an anti-reflection film, and an optical filter film. The first optical film layer is disposed on the side of the substrate away from the photosensitive film.

9. An electronic device, characterized in that, The system includes a second substrate, a sensor as described in claims 1 to 8, and a processor, wherein the processor and the sensor are disposed on the second substrate, and the sensor and the processor are connected through the second substrate.

10. A method for manufacturing a sensor, characterized in that, include: A detector is formed, comprising a substrate, a photosensitive film, and an electrode assembly. The photosensitive film is disposed on one side of the substrate, and the electrode assembly is disposed on the surface of the photosensitive film away from the substrate. The transmittance of the substrate is greater than or equal to a set transmittance. The detector is attached to the first substrate such that the photosensitive film of the detector is closer to the first substrate than the substrate, and the electrode group of the detector is connected to the first substrate; A filling material is disposed between the detector and the first substrate.

11. The method for preparing the sensor according to claim 10, characterized in that, The detector formation includes: A substrate is provided, wherein the transmittance of the substrate is greater than or equal to a set transmittance; A photosensitive film is formed on one side of the substrate; An electrode assembly is disposed on the surface of the photosensitive film away from the substrate.

12. The method for preparing the sensor according to claim 11, characterized in that, The electrode assembly includes a first electrode and a second electrode, and the detector forming element further includes: An optical reflective film is formed on the side of the photosensitive film away from the substrate. When the optical reflective film is a metal film, the optical reflective film is disposed between the first electrode and the second electrode. The optical reflective film has a second gap with the first electrode and a third gap with the second electrode.

13. The method for preparing the sensor according to claim 11 or 12, characterized in that, The detector formation further includes forming a first optical film layer on the side of the substrate away from the photosensitive film, wherein the first optical film layer includes at least one of an optical cut-off film, an anti-reflection film, and an optical filter film.

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