Cleaning method

The method of connecting a transport device to a processing device for gas supply and exhaust system integration addresses downtime issues by cleaning the transport device efficiently, maintaining continuous processing equipment operation.

WO2026004197A1PCT designated stage Publication Date: 2026-01-02TOKYO ELECTRON LTD
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Patent Information

Application Number
PCT/JP2025/003371
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-06-25
Filing Date
2025-02-03
Publication Date
2026-01-02

AI Technical Summary

Technical Problem

Existing cleaning processes for transport devices in processing equipment result in prolonged downtime, reducing productivity due to the need to stop operations while cleaning, which contaminates the processing equipment with particles from fallen deposits.

Method used

A method involving connecting a transport device to a processing device to supply cleaning gas through shared openings, utilizing the processing device's gas supply and exhaust system to clean the transport device, thereby minimizing downtime and preventing contamination.

Benefits of technology

Reduces downtime by allowing continuous operation during cleaning, ensuring the transport device's cleanliness without interrupting processing equipment operations.

✦ Generated by Eureka AI based on patent content.

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Abstract

This cleaning method that is for cleaning the interior of a transport device for transporting a transportation object comprises a step (a) and a step (b). In step (a), a first opening in a treatment device for treating a substrate and a second opening in the transport device are connected. In step (b), a cleaning gas is supplied into the interior of the treatment device and thereby the cleaning gas is supplied into the interior of the transport device via the first opening and the second opening.
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Description

Cleaning Method

[0001] Various aspects and embodiments of the present disclosure relate to cleaning methods.

[0002] Furthermore, for example, Patent Document 1 listed below discloses a part replacement system for replacing consumable parts, comprising a part storage device and a part replacement device. The part storage device stores unused consumable parts. The part replacement device is connected to a processing device and the part storage device, and replaces used consumable parts attached to the processing device with unused consumable parts stored in the part storage device. The part replacement device also moves to the position of the processing device on which the consumable part to be replaced is attached and connects to the processing device. The part storage device also moves to the position of the part replacement device connected to the processing device on which the consumable part to be replaced is attached and connects to the part replacement device."

[0003] Japanese Patent Application Laid-Open No. 2021-176173

[0004] The present disclosure provides a cleaning method that can reduce downtime associated with cleaning within a transport device.

[0005] One aspect of the present disclosure is a cleaning method for cleaning the inside of a transport device that transports a transported object, the method including steps (a) and (b). In step (a), a first opening of a processing device for processing a substrate is connected to a second opening of the transport device. In step (b), a cleaning gas is supplied into the processing device, thereby supplying the cleaning gas into the transport device via the first opening and the second opening.

[0006] Various aspects and embodiments of the present disclosure may reduce downtime associated with cleaning within a transport device.

[0007] FIG. 1 is a schematic diagram showing an example of a conveying device according to an embodiment of the present disclosure. FIG. 2 is a diagram showing an example of a connector unit. FIG. 3 is a diagram showing an example of a processing device. FIG. 4 is a flowchart showing an example of a cleaning method. FIG. 5 is a flowchart showing an example of a cleaning method. FIG. 6 is a flowchart showing an example of a cleaning method. FIG. 7 is a diagram showing an example of a cleaning process. FIG. 8 is a diagram showing an example of a cleaning process. FIG. 9 is a diagram showing an example of a space between a gate valve of a conveying device and a gate valve of a processing device. FIG. 10 is a diagram showing an example of a cleaning process. FIG. 11 is a diagram showing an example of a state of a processing device and a conveying device when replacing a consumable part. FIG. 12 is a diagram showing another example of a conveying device. FIG. 13 is a diagram showing another example of a cleaning process.

[0008] Hereinafter, embodiments of the disclosed cleaning method will be described in detail with reference to the drawings. Note that the disclosed cleaning method is not limited to the following embodiments.

[0009] A transport device that transports transported objects such as consumable parts used in processing equipment for processing substrates may store used consumable parts. When storing used consumable parts, reaction by-products (hereinafter referred to as deposits) attached to the used consumable parts may fall into the transport device. When the deposits fall into the transport device, the deposits in the transport device turn into particles and float within the transport device. When transporting unused consumable parts, the floating particles may adhere to the unused consumable parts. If particles adhere to unused consumable parts, the consumable parts with particles attached will be carried into the processing equipment, and the inside of the processing equipment may be contaminated by the particles.

[0010] Therefore, to remove particles from the conveying device, it is necessary to periodically clean the inside of the conveying device. However, while the inside of the conveying device is being cleaned, the conveyed objects cannot be transported. Therefore, even if consumable parts in the processing equipment need to be replaced, the consumable parts cannot be replaced until the cleaning of the inside of the conveying device is completed. This results in a longer downtime for the processing equipment, reducing productivity.

[0011] Therefore, the present disclosure provides a technique that can reduce downtime associated with cleaning the inside of a conveying device.

[0012] [Configuration Example of Transporting Device 10] FIG. 1 is a schematic diagram illustrating an example of a transporting device 10 according to an embodiment of the present disclosure. The transporting device 10 includes a storage unit 11, a cassette 12, a robot arm 13, a moving mechanism 14, and a connector unit 20. The storage unit 11 accommodates the cassette 12, the robot arm 13, and a sensor 153. An opening 11a is formed in a side wall of the storage unit 11 for carrying in and out consumable parts. The opening 11a is an example of a first opening. The opening 11a is opened and closed by a gate valve G1. The gate valve G1 is an example of a first gate valve. A lid 110 is provided on the storage unit 11, and the cassette 12 can be removed from the storage unit 11 by removing the lid 110.

[0013] The cassette 12 can accommodate both unused and used consumable parts 30. The cassette 12 is placed on a stage 121. A drive unit 122 raises and lowers the stage 121. In this embodiment, the unused consumable parts 30 are accommodated in an upper portion of the cassette 12, and the used consumable parts 30 are accommodated in a lower portion of the cassette 12. This prevents particles and the like that fall from the used consumable parts 30 from contaminating the unused consumable parts 30. The consumable parts 30 are an example of transported objects.

[0014] The robot arm 13 has an end effector 130 at the tip of the arm. The robot arm 13 uses the end effector 130 to remove used consumable parts 30 from the processing device through the opening 11a and store them in the cassette 12. The robot arm 13 also uses the end effector 130 to remove unused consumable parts 30 from the cassette 12 and carry them into the processing device through the opening 11a.

[0015] The sensor 153 measures the cleanliness level inside the container 11. The sensor 153 includes, for example, at least one of an optical emission spectrometer (OES) and a quadrupole mass spectrometer (QMS), and measures the lowness of the concentration of impurities such as particles contained in the gas inside the container 11 as the cleanliness level. The sensor 153 then sends the measured cleanliness level to the control unit 150. The control unit 150 determines whether the cleanliness level sent from the sensor 153 is higher than a predetermined cleanliness level.

[0016] 2, the connector unit 20 has a plurality of connectors 201. The plurality of connectors 201 includes a connector for receiving power from the processing device, a connector for transmitting and receiving electrical signals to and from the processing device, and the like. The plurality of connectors 201 also includes a connector for receiving gas from the processing device to the transport device 10, and a connector for exhausting gas from within the transport device 10 to the processing device. The connector unit 20 is provided with positioning pins 200 used for alignment when connecting with a connector provided on the processing device side.

[0017] A connector for receiving gas from the processing device to the transporting device 10 is connected to a pipe 21 for sending the supplied gas to a space around the gate valve G1 of the transporting device 10. A connector for exhausting gas from inside the transporting device 10 to the processing device is connected to a pipe 22 for sending gas from the space around the gate valve G1 of the transporting device 10 to the connector. A pipe 23 that communicates with the space inside the transporting device 10 and sends gas from inside the transporting device 10 to the connector is connected to the connector for exhausting gas from inside the transporting device 10 to the processing device. The pipe 23 is an example of a first exhaust pipe. A wiring 24 for charging a battery 151 with power supplied from the processing device is connected to the connector for receiving and transmitting electrical signals to and from the processing device. A wiring 25 for transmitting electrical signals to the control unit 150 is connected to the connector for transmitting and receiving electrical signals to the processing device.

[0018] The moving mechanism 14 has a main body 140 and wheels 141. A power source, a steering mechanism, and the like are provided within the main body 140. The wheels 141 rotate using the power source within the main body 140, and move the transporting device 10 in a direction controlled by the steering mechanism within the main body 140. Note that the moving mechanism 14 may move the transporting device 10 by a method other than the wheels 141, such as a walking type, as long as it can move the transporting device 10.

[0019] The transporting device 10 includes a control unit 150, a battery 151, and a sensor 152. The sensor 152 senses the surroundings of the transporting device 10 and outputs the sensing results to the control unit 150. The control unit 150 has a storage unit and a processor. The processor is, for example, a central processing unit (CPU) or a digital signal processor (DSP), and controls each unit of the transporting device 10 by reading and executing a program from the storage unit. The control unit 150 moves the transporting device 10 by controlling the movement mechanism 14 using, for example, the sensing results from the sensor 152.

[0020] [Configuration of Processing Apparatus 40] Figure 3 illustrates an example of the processing apparatus 40. The processing apparatus 40 includes a plasma processing chamber 410, a gas supply 420, a power supply 430, and an exhaust system 440. The processing apparatus 40 also includes a substrate support 411 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 410. The gas inlet includes a showerhead 413. The substrate support 411 is disposed within the plasma processing chamber 410. The showerhead 413 is disposed above the substrate support 411. In one embodiment, the showerhead 413 forms at least a portion of the ceiling of the plasma processing chamber 410. The plasma processing chamber 410 has a plasma processing space 410s defined by the showerhead 413, a sidewall 410e of the plasma processing chamber 410, and the substrate support 411.

[0021] The plasma processing chamber 410 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 410s and at least one gas exhaust port for exhausting gas from the plasma processing space. The plasma processing chamber 410 is grounded. The showerhead 413 and the substrate support 411 are electrically insulated from the housing of the plasma processing chamber 410. An opening 410a is formed in the sidewall 410e of the plasma processing chamber 410, through which a substrate W or consumable parts are loaded into and unloaded from the plasma processing chamber 410. The opening 410a is an example of a second opening. The sidewall 410e of the plasma processing chamber 410 also has another opening 410g, which is used to load and unload a substrate W into and from the plasma processing chamber 410 via a vacuum transfer chamber (not shown). The opening 410a is opened and closed by a gate valve G2. The gate valve G2 is an example of a second gate valve. The opening 410g is opened and closed by the gate valve G3. An O-ring 410d is disposed on a surface 410c around the opening 410a so as to surround the opening 410a.

[0022] A connector unit 43 is provided below the opening 410a. The connector unit 43 has a plurality of connectors that are connected to connectors 201 included in the connector unit 20 of the transporting device 10. The plurality of connectors included in the connector unit 43 include a connector for supplying power to the transporting device 10, a connector for transmitting and receiving electrical signals to and from the transporting device 10, and the like. The plurality of connectors included in the connector unit 43 also include a connector for supplying gas to the transporting device 10, and a connector for flowing gas exhausted from the transporting device 10 into the gas exhaust pipe 410f. The connector unit 43 has a positioning mechanism that engages with a positioning pin 200 provided in the connector unit 20 of the transporting device 10.

[0023] The substrate support portion 411 includes a main body portion 4111 and a ring assembly 4112. The main body portion 4111 has a central region 4111a for supporting a substrate W and an annular region 4111b for supporting the ring assembly 4112. A wafer is an example of a substrate W. The annular region 4111b of the main body portion 4111 surrounds the central region 4111a of the main body portion 4111 in a plan view. The substrate W is disposed on the central region 4111a of the main body portion 4111, and the ring assembly 4112 is disposed on the annular region 4111b of the main body portion 4111 so as to surround the substrate W on the central region 4111a of the main body portion 4111. Therefore, the central region 4111a is also called a substrate support surface for supporting the substrate W, and the annular region 4111b is also called a ring support surface for supporting the ring assembly 4112.

[0024] In one embodiment, the main body 4111 includes a base 41110 and an electrostatic chuck 41111. The base 41110 includes a conductive member. The conductive member of the base 41110 can function as a lower electrode. The electrostatic chuck 41111 is disposed on the base 41110. The electrostatic chuck 41111 includes a ceramic member 41111a and an electrostatic electrode 41111b disposed within the ceramic member 41111a. The ceramic member 41111a has a central region 4111a. In one embodiment, the ceramic member 41111a also has an annular region 4111b. Note that another member surrounding the electrostatic chuck 41111, such as an annular electrostatic chuck or an annular insulating member, may also have the annular region 4111b. In this case, the ring assembly 4112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 41111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 431 and / or a DC (Direct Current) power supply 432 (described later) may be disposed within the ceramic member 41111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 41110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 41111b may function as the lower electrode. Therefore, the substrate support 411 includes at least one lower electrode.

[0025] The ring assembly 4112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0026] The substrate support 411 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 41111, the ring assembly 4112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 41110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow passage 41110a. In one embodiment, the flow passage 41110a is formed in the base 41110, and one or more heaters are disposed in the ceramic member 41111a of the electrostatic chuck 41111. The substrate support 411 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 4111a.

[0027] Through holes for passing lift pins 44 are formed in the bottom of the plasma processing chamber 410 and in the main body 4111 of the substrate support 411. The lift pins 44 are raised and lowered by a drive unit 45 when replacing the ring assembly 4112. This allows the used ring assembly 4112 to be handed over to the robot arm 13 of the transport device 10 and removed from the plasma processing chamber 410. Also, the unused ring assembly 4112 that has been brought into the plasma processing chamber 410 can be received from the robot arm 13 and placed on the electrostatic chuck 41111. The ring assembly 4112 is an example of a consumable part 30.

[0028] The shower head 413 is configured to introduce at least one process gas from the gas supply unit 420 into the plasma processing space 410s. The shower head 413 has at least one gas supply port 413a, at least one gas diffusion chamber 413b, and multiple gas inlets 413c. The process gas supplied to the gas supply port 413a passes through the gas diffusion chamber 413b and is introduced into the plasma processing space 410s from the multiple gas inlets 413c. The shower head 413 also includes at least one upper electrode. In addition to the shower head 413, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 410e.

[0029] The gas supply 420 may include at least one gas source 421 and at least one flow controller 422. In one embodiment, the gas supply 420 is configured to supply at least one process gas from a corresponding gas source 421 through a corresponding flow controller 422 to the showerhead 413. Each flow controller 422 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 420 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0030] The power source 430 includes an RF power source 431 coupled to the plasma processing chamber 410 via at least one impedance matching circuit. The RF power source 431 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one process gas supplied to the plasma processing space 410s. Therefore, the RF power source 431 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 410s. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0031] In one embodiment, the RF power supply 431 includes a first RF generator 431a and a second RF generator 431b. The first RF generator 431a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 431a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0032] The second RF generator 431b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 431b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0033] The power supply 430 may also include a DC power supply 432 coupled to the plasma processing chamber 410. The DC power supply 432 includes a first DC generator 432a and a second DC generator 432b. In one embodiment, the first DC generator 432a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 432b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0034] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 432a and at least one lower electrode. Thus, the first DC generator 432a and the waveform generator constitute a voltage pulse generator. When the second DC generator 432b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 432a and 432b may be provided in addition to the RF power supply 431, or the first DC generating unit 432a may be provided instead of the second RF generating unit 431b.

[0035] The exhaust system 440 may be connected to, for example, a gas exhaust pipe 410 f provided at the bottom of the plasma processing chamber 410. The gas exhaust pipe 410 f is an example of a second exhaust pipe. The exhaust system 440 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 410 s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0036] The control unit 41 processes computer-executable instructions that cause the processing device 40 to perform the various steps described in this disclosure. The control unit 41 may be configured to control each element of the processing device 40 to perform the various steps described herein. In one embodiment, part or all of the control unit 41 may be included in the processing device 40. The control unit 41 may include a processing unit 41a1, a storage unit 41a2, and a communication interface 41a3. The control unit 41 is realized, for example, by a computer 41a. The processing unit 41a1 may be configured to read a program from the storage unit 41a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 41a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 41a2 and read from the storage unit 41a2 by the processing unit 41a1 and executed. The medium may be various storage media readable by the computer 41a, or may be a communication line connected to the communication interface 41a3. The processing unit 41a1 may be a CPU. The storage unit 41a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 41a3 may communicate with the processing device 40 via a communication line such as a local area network (LAN).

[0037] [Cleaning Method] Figures 4 to 6 are flowcharts showing an example of a cleaning method. The cleaning method illustrated in Figures 4 to 6 is realized by the control unit 150 controlling each part of the conveying device 10. An example of the cleaning method will be described below with reference to Figures 7 to 10.

[0038] First, the transporting device 10 is moved by the moving mechanism 14 to the vicinity of the processing device 40 (step S100). As a result, as shown in Fig. 7, for example, the transporting device 10 moves to the vicinity of the processing device 40, and the connector unit 20 of the transporting device 10 faces the connector unit 43 of the processing device 40. In addition, the surface 11c around the opening 11a of the transporting device 10 faces the surface 410c around the opening 410a of the processing device 40.

[0039] Next, as the conveying device 10 moves closer to the processing device 40, the surface 11c around the opening 11a of the conveying device 10 and the surface 410c around the opening 410a of the processing device 40 are connected via the O-ring 410d, as shown in Fig. 8. Also, as shown in Fig. 8, the connector unit 20 and the connector unit 43 are connected (step S101). Step S101 is an example of process (a).

[0040] Next, it is determined whether the connector unit 20 is normally connected (step S102). In step S102, for example, the control unit 150 determines whether an electrical signal indicating that the connector unit 20 and the connector unit 43 are normally connected is received from the processing device 40 via the connector of the connector unit 20. For example, the connector unit 43 of the processing device 40 is provided with a sensor (not shown). When the sensor outputs an electrical signal indicating that the connection is normal, the control unit 41 of the processing device 40 transmits an electrical signal indicating that the connector unit 20 is normally connected to the transporting device 10 via the connector unit 43 and the connector unit 20.

[0041] If the connector unit 20 is not connected properly (step S102: No), the movement mechanism 14 moves the transport device 10 away from the processing device 40 (S103). Then, the movement mechanism 14 adjusts the position of the transport device 10 relative to the processing device 40, and the process shown in step S101 is executed again.

[0042] On the other hand, if the connector unit 20 is connected normally (step S102: Yes), power supply from the processing device 40 to the transporting device 10 begins via the connector unit 20 (step S104). In this way, the transporting device 10 can receive power from the processing device 40, which allows the battery 151 to be made smaller. Furthermore, the transporting device 10 can shorten the downtime required to charge the battery 151.

[0043] Next, evacuation of the storage section 11 is initiated via the connector unit 20 (step S105). Step S105 is an example of process (f). In step S105, the control unit 150 of the conveying device 10 sends an electrical signal to the control unit 41 of the processing device 40 via the connector unit 20 and the connector unit 43 to instruct the control unit 41 to evacuation the storage section 11 using the exhaust system 440. This initiates evacuation of the storage section 11. Evacuation of the storage section 11 is initiated via the piping 23, connector unit 20, connector unit 43, and exhaust system 440 connected to the storage section 11.

[0044] In this way, by using the exhaust system 440 of the processing device 40 to exhaust gas from the transport device 10, it is not necessary to mount a mechanism for exhausting gas on the transport device 10. This allows the transport device 10 to be made smaller and lighter. In addition, since piping connecting the transport device 10 to a system that processes the gas exhausted from the transport device 10 is also not required, the degree of freedom of movement of the transport device 10 can be improved.

[0045] Next, it is determined whether the pressure inside the storage unit 11 is normal (step S106). The gas inside the storage unit 11 is exhausted by the exhaust system 440 of the processing device 40 via the connector unit 20 and the connector unit 43, and a pressure sensor is provided in the piping between the connector unit 43 and the exhaust system 440. The control unit 41 of the processing device 40 transmits the measurement value of the pressure sensor to the transporting device 10 via the connector unit 43 and the connector unit 20. In step S106, it is determined whether the control unit 150 has received an electrical signal from the processing device 40 indicating that the pressure inside the storage unit 11 has fallen below a predetermined pressure within a predetermined time after the start of evacuation of the storage unit 11 in step S105.

[0046] If the pressure inside the storage section 11 is not normal (step S106: No), an error is notified to the manager of the transporting device 10 or the like (step S107), and the cleaning method shown in this flowchart ends.

[0047] On the other hand, if the pressure in the accommodation unit 11 is normal (step S106: Yes), evacuation of the space between the gate valves is started (step S108). In step S108, the control unit 150 of the transporting device 10 sends an electrical signal to the control unit 41 of the processing device 40 via the connector units 20 and 43 to instruct the control unit 41 to use the exhaust system 440 to evacuation the space between the gate valves. As a result, as shown in FIG. 9 , for example, the exhaust system 440 starts exhausting gas from the space 60 between the gate valve G1 of the transporting device 10 and the gate valve G2 of the processing device 40 via the pipe 22.

[0048] Next, it is determined whether the pressure in the space 60 between the gate valves is normal (step S109). A pressure sensor P is provided in the piping between the connector unit 43 and the exhaust system 440, as shown in FIG. 9 , for example. In step S109, the control unit 41 of the processing device 40 transmits the measurement value of the pressure sensor P to the transport device 10 via the connector unit 43 and the connector unit 20. In step S109, for example, the control unit 150 determines whether the pressure in the space 60 has fallen to a predetermined pressure or less within a predetermined time after the start of evacuation of the space 60 between the gate valves G1 and G2 in step S108.

[0049] If the pressure in the space 60 between the gate valves is not normal (step S109: No), the evacuation of the space 60 between the gate valves is stopped (step S110), and the process shown in step S103 is executed. Note that, if it is determined in step S109 that the pressure in the space 60 between the gate valves is not normal a predetermined number of times or more, an error is notified to the manager of the transport device 10, and the cleaning method shown in this flowchart ends.

[0050] On the other hand, if the pressure in the space 60 between the gate valves is normal (step S109: Yes), the space 60 between the gate valves is purged (step S111). In step S111, as shown in FIG. 9 , for example, a purge gas is supplied from the gas supply unit 420 via the pipe 21 into the space 60 between the gate valves, thereby purging the space 60. In this embodiment, the purge gas is an inert gas such as nitrogen gas or a rare gas. This purges particles, moisture, and the like from the space 60 between the gate valves. Note that the purging of the space 60 may be performed by alternately repeating the supply of the purge gas into the space 60 and the evacuation of the space 60 multiple times. This allows particles, moisture, and the like from the space 60 between the gate valves to be efficiently removed.

[0051] Next, it is determined whether the difference between the pressure in the accommodation unit 11 of the transporting device 10 and the pressure in the space 60 between the gate valves is within a predetermined value (step S112). In step S112, it is determined whether the difference between the pressure in the accommodation unit 11 of the transporting device 10 and the pressure in the space 60 between the gate valves is within a predetermined value within a predetermined time period after the start of evacuation of the accommodation unit 11 in step S105. Also in step S112, the pressure in the accommodation unit 11 of the transporting device 10 and the pressure in the space 60 between the gate valves are measured by pressure sensors provided in the processing device 40. Then, the control unit 41 of the processing device 40 transmits electrical signals indicating the measurement results to the control unit 150 of the transporting device 10 via the connector unit 43 and the connector unit 20. Based on the measurement results received from the processing device 40, the control unit 150 of the transporting device 10 determines whether the difference between the pressure in the accommodation unit 11 of the transporting device 10 and the pressure in the space 60 between the gate valves is within a predetermined value.

[0052] If the difference between the pressure in the accommodation section 11 of the transporting device 10 and the pressure in the space 60 between the gate valves is greater than the predetermined value (step S112: No), the process shown in step S107 is executed.

[0053] On the other hand, if the difference between the pressure in the accommodation unit 11 of the transporting device 10 and the pressure in the space 60 between the gate valves is equal to or less than the predetermined value (step S112: Yes), the gate valve G1 of the transporting device 10 is opened (step S113 (see FIG. 5)). Then, it is determined whether the difference between the pressure in the accommodation unit 11 of the transporting device 10 and the pressure in the plasma processing chamber 410 of the processing device 40 is equal to or less than the predetermined value (step S114).

[0054] In step S114, one of the conditions may be added that the pressure inside the accommodation unit 11 of the transporting device 10 is lower than the pressure inside the plasma processing chamber 410 of the processing device 40. This makes it possible to prevent particles and the like inside the accommodation unit 11 of the transporting device 10 from entering the plasma processing space 410s of the processing device 40 when the gate valve G2 of the processing device 40 is opened.

[0055] If the difference between the pressure inside the accommodation unit 11 of the transporting device 10 and the pressure inside the plasma processing chamber 410 of the processing device 40 is greater than the predetermined value (step S114: No), the process shown in step S107 is executed.

[0056] On the other hand, if the difference between the pressure in the accommodation unit 11 of the transporting device 10 and the pressure in the plasma processing chamber 410 of the processing device 40 is equal to or less than the predetermined value (step S114: Yes), the gate valve G2 of the processing device 40 is opened (step S115). Step S115 is an example of step (g).

[0057] Next, a purge gas is supplied and exhausted (step S116). Step S116 is an example of process (h). In step S116, a purge gas is supplied from the gas supply unit 420 into the plasma processing space 410s of the processing device 40 via the plasma processing chamber 410. In this embodiment, the purge gas is an inert gas such as nitrogen gas or a rare gas.

[0058] The purge gas supplied into the plasma processing space 410s is supplied into the accommodation unit 11 of the transport device 10 through the opening 410a of the processing device 40 and the opening 11a of the transport device 10, as shown in FIG. 10 . The purge gas supplied into the accommodation unit 11 flows inside the accommodation unit 11 and is exhausted by the exhaust system 440 of the processing device 40 via the piping 23. This purges particles, moisture, and the like from inside the accommodation unit 11. Note that, in purging the accommodation unit 11, the supply of the purge gas into the accommodation unit 11 and the exhaust of the accommodation unit 11 may be alternately repeated multiple times. This allows particles, moisture, and the like from inside the accommodation unit 11 to be efficiently removed.

[0059] Next, supply and exhaust of cleaning gas are initiated (step S117). Step S117 is an example of process (b). In step S117, cleaning gas is supplied from the gas supply unit 420 into the plasma processing space 410s of the processing device 40 via the shower head 413. In this embodiment, the cleaning gas is, for example, ozone gas or nitrogen trifluoride gas. The cleaning gas supplied into the plasma processing space 410s is supplied into the accommodation unit 11 of the transport device 10 via the opening 410a of the processing device 40 and the opening 11a of the transport device 10, as shown in FIG. 10 . The cleaning gas supplied into the accommodation unit 11 flows within the accommodation unit 11 and is exhausted by the exhaust system 440 of the processing device 40 via the piping 23. This decomposes and removes particles and the like within the accommodation unit 11.

[0060] Next, it is determined whether the interior of the storage unit 11 of the transporting device 10 has reached a predetermined cleanliness level (step S118). Step S118 is an example of process (d). If the interior of the storage unit 11 has not reached the predetermined cleanliness level (step S118: No), the process shown in step S118 is executed again.

[0061] On the other hand, if the interior of the container 11 has reached the predetermined cleanliness level (step S118: Yes), the supply and exhaust of the cleaning gas are stopped (step S119). Then, the supply and exhaust of the purge gas are performed (step S120). Step S116 is an example of process (c). As a result, particles and the like that have been decomposed by the cleaning gas and remain in the container 11 are removed together with the purge gas.

[0062] Following step S120, for example, as shown in FIG. 11, replacement of consumable parts in the processing device 40 may be performed using the robot arm 13.

[0063] Next, the gate valve G1 of the transporting device 10 and the gate valve G2 of the processing device 40 are closed (step S121). Then, the vacuum pumping in the space 60 between the gate valves is stopped (step S122). Then, the space 60 between the gate valves is purged (step S123). In step S123, similar to step S111, the supply of purge gas into the space 60 and the evacuation of the space 60 may be alternately repeated multiple times.

[0064] Next, it is determined whether the pressure in space 60 between the gate valves has reached atmospheric pressure and the concentration of the residual gas in space 60 has fallen below a predetermined value (step S124). A sensor for measuring the concentration of the predetermined gas is provided in the piping between connector unit 43 and exhaust system 440. Control unit 41 of processing device 40 transmits an electrical signal indicating the measurement value of the sensor to conveying device 10 via connector unit 43 and connector unit 20. In step S124, it is determined based on the measurement value received from processing device 40 whether the pressure in space 60 between the gate valves has reached atmospheric pressure and the concentration of the residual gas in space 60 has fallen below a predetermined value.

[0065] If the pressure in the space 60 between the gate valves has not reached atmospheric pressure or the concentration of residual gas in the space 60 is equal to or greater than a predetermined value (step S124: No), the process shown in step S123 is executed again.

[0066] When the pressure in the space 60 between the gate valves reaches atmospheric pressure and the concentration of residual gas in the space 60 becomes less than a predetermined value (step S124: Yes), the transporting device 10 retreats. This disconnects the surface 11c around the opening 11a of the transporting device 10 from the surface 410c around the opening 410a of the processing device 40 (step S125). Then, the moving mechanism 14 moves the transporting device 10 away from the processing device 40 (step S126), and the cleaning method shown in this flowchart ends.

[0067] The embodiment has been described above. As described above, the cleaning method for cleaning the inside of a transport device (transport device 10) that transports an object in this embodiment includes steps (a) and (b). In step (a), a first opening (opening 11a) of a processing device (processing device 40) that processes a substrate (W) is connected to a second opening (opening 410a) of the transport device. In step (b), a cleaning gas is supplied into the processing device, so that the cleaning gas is supplied into the transport device via the first opening and the second opening. This reduces downtime associated with cleaning the inside of the transport device.

[0068] The cleaning method in the above-described embodiment may also include step (c). Step (c) is performed after step (b), and includes supplying a purge gas into the processing apparatus to purge the interior of the conveying apparatus with the purge gas through the first opening and the second opening. As a result, particles and the like that have been decomposed by the cleaning gas and remain in the conveying apparatus are removed together with the purge gas.

[0069] The cleaning method in the above-described embodiment may also include step (d). Step (d) is performed after step (c), and determines the cleanliness of the gas inside the conveying device using a sensor (sensor 153) provided inside the conveying device. Step (b) is performed again when it is determined that the cleanliness of the gas inside the conveying device has not reached a predetermined cleanliness level. This allows the inside of the conveying device to be cleaned until the predetermined cleanliness level is reached.

[0070] In the above-described embodiment, the cleaning gas is ozone gas or nitrogen trifluoride gas, which allows the inside of the conveying device to be cleaned efficiently.

[0071] In the above-described embodiment, the conveying device is provided with a first exhaust pipe (piping 23) that communicates with the space within the conveying device. In step (a), the first exhaust pipe is connected to a second exhaust pipe (gas exhaust pipe 410f) of the processing device, and gas within the conveying device is exhausted via the first exhaust pipe and the second exhaust pipe. This eliminates the need to install a mechanism for exhausting gas on the conveying device 10, allowing the conveying device 10 to be made smaller and lighter.

[0072] The cleaning method in the above-described embodiment may also include steps (f) and (g). Step (f) is performed between steps (a) and (b) and involves depressurizing the interior of the transport device to a pressure lower than that within the processing equipment. Step (g) is performed between steps (f) and (b) and involves opening a first gate valve (gate valve G1) provided at the first opening and a second gate valve (gate valve G2) provided at the second opening when the pressure within the transport device becomes lower than that within the processing equipment. This prevents particles and the like within the transport device from entering the processing equipment when the first gate valve and the second gate valve are opened.

[0073] The cleaning method in the above-described embodiment may also include step (h). Step (h) is performed between steps (a) and (b), and involves supplying a purge gas into the processing device to purge the inside of the conveying device with the purge gas through the first opening and the second opening. This allows particles, moisture, and the like in the container 11 to be removed.

[0074] [Others] The technology disclosed in the present application is not limited to the above-described embodiment, and various modifications are possible within the scope of the gist thereof.

[0075] For example, in the above embodiment, the transporting device 10 transports consumable parts such as the ring assembly 4112 used in the processing device 40, but the objects transported by the transporting device 10 are not limited to consumable parts. The objects transported by the transporting device 10 may be substrates W before being processed by the processing device 40, substrates W after being processed by the processing device 40, etc.

[0076] Furthermore, in the above-described embodiment, the transport device 10 receives a supply of power and the like from the processing device 40 via the connector unit 20, but the disclosed technology is not limited to this. As another embodiment, the transport device 10 may receive a supply of power and the like from a supply device provided in a clean room or the like via the connector unit 20. The supply device is preferably provided near the processing device 40. This allows the transport device 10 to receive a supply of power and the like when replacing consumable parts of the processing device 40.

[0077] In the above embodiment, the transporting device 10 autonomously travels using the moving mechanism 14, the control unit 150, and the sensor 152, but the disclosed technology is not limited to this. The transporting device 10 may be moved by being controlled by a user. The moving mechanism 14 may be separable from the transporting device 10. For example, the transporting device 10 may be separable into a first part including the storage unit 11 and a second part including the moving mechanism 14.

[0078] 12, a heater HT may be embedded in the inner wall of the conveying device 10, and the inner wall of the conveying device 10 may be heated before the cleaning gas is supplied into the conveying device 10. This allows particles and the like adhering to the inner wall of the conveying device 10 to be efficiently removed when the cleaning gas is supplied into the conveying device 10 in step S117.

[0079] In the above-described embodiment, particles and the like are removed from the transport device 10 by the cleaning gas supplied into the transport device 10, but the disclosed technology is not limited thereto. As another example, as shown in FIG. 13 , after the cleaning gas is supplied in step S117, plasma may be generated from the cleaning gas by supplying RF power into the plasma processing space 410s in step S130. Step S130 is an example of process (e). As a result, activated species contained in the plasma are supplied into the accommodation unit 11 of the transport device 10 through the opening 410a of the processing device 40 and the opening 11a of the transport device 10. This allows particles and the like in the accommodation unit 11 to be efficiently removed.

[0080] 13 , after plasma is generated in step S130, the cleanliness of the interior of the accommodation unit 11 is determined in step S118, and when a predetermined cleanliness level is reached within the accommodation unit 11, the generation of plasma is stopped in step S131. Thereafter, the supply and exhaust of the cleaning gas are stopped in step S119, and the supply and exhaust of the purge gas are performed in step S120.

[0081] 13, the cleaning gas is, for example, oxygen gas or a gas containing carbon and fluorine. Also, in the example of FIG. 13, the inner wall of the conveying device 10 may be heated before the cleaning gas is supplied into the conveying device 10. This allows the inner wall of the conveying device 10 to be heated while the activated species contained in the plasma are being supplied into the accommodation unit 11 of the conveying device 10, thereby enabling particles and the like in the accommodation unit 11 to be removed more efficiently.

[0082] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0083] Furthermore, the following supplementary notes are disclosed regarding the above-described embodiment.

[0084] (Supplementary Note 1) A cleaning method for cleaning the inside of a transport device that transports transported objects, comprising: (a) connecting a first opening of a processing device for processing substrates with a second opening of the transport device; and (b) supplying a cleaning gas into the processing device, thereby supplying the cleaning gas into the transport device through the first and second openings. (Supplementary Note 2) The cleaning method according to Supplementary Note 1, further comprising: (c) a step, performed after step (b), of purging the inside of the transport device with the purge gas through the first and second openings by supplying a purge gas into the processing device. (Supplementary Note 3) The cleaning method according to Supplementary Note 1 or 2, further comprising: (d) a step, performed after step (c), of determining the cleanliness of the gas in the transport device using a sensor provided in the transport device, wherein step (b) is performed again if it is determined that the cleanliness of the gas in the transport device has not reached a predetermined cleanliness level. (Supplementary Note 4) The cleaning method according to any one of Supplements 1 to 3, wherein the cleaning gas is ozone gas or nitrogen trifluoride gas. (Supplementary Note 5) The cleaning method according to any one of Supplements 1 to 4, wherein in step (b), components in the transporting device are heated. (Supplementary Note 6) The cleaning method according to Supplementary Note 1, further comprising: (e) a step, performed after step (b), of generating plasma from the cleaning gas in the processing device, thereby supplying activated species contained in the plasma into the transporting device via the first opening and the second opening. (Supplementary Note 7) The cleaning method according to Supplementary Note 6, further comprising: (c) a step, performed after step (e), of supplying a purge gas into the processing device, thereby purging the inside of the transporting device with the purge gas via the first opening and the second opening.(Supplementary Note 8) The cleaning method according to Supplementary Note 6 or 7, further comprising: (d) a step, performed after step (c), of determining the cleanliness of the gas in the conveying device using a sensor provided in the conveying device, wherein step (e) is performed again when it is determined that the cleanliness of the gas in the conveying device has not reached a predetermined cleanliness level. (Supplementary Note 9) The cleaning method according to any one of Supplements 6 to 8, wherein the cleaning gas is oxygen gas or a gas containing carbon and fluorine. (Supplementary Note 10) The cleaning method according to any one of Supplements 6 to 9, wherein in step (e), components in the conveying device are heated. (Supplementary Note 11) The cleaning method according to any one of Supplements 1 to 10, wherein the conveying device is provided with a first exhaust pipe communicating with a space within the conveying device, and in step (a), the first exhaust pipe is connected to a second exhaust pipe of the processing device, and the gas in the conveying device is exhausted via the first exhaust pipe and the second exhaust pipe. (Supplementary Note 12) The cleaning method according to any one of Supplementary Notes 1 to 11, further comprising: (f) a step, performed between the step (a) and the step (b), of depressurizing the interior of the transporting device to a pressure lower than that in the processing device; and (g) a step, performed between the step (f) and the step (b), of opening a first gate valve provided at the first opening and a second gate valve provided at the second opening when the pressure in the transporting device becomes lower than that in the processing device. (Supplementary Note 13) The cleaning method according to any one of Supplementary Notes 1 to 12, further comprising: (h) a step, performed between the step (a) and the step (b), of supplying a purge gas into the processing device, thereby purging the interior of the transporting device with the purge gas through the first opening and the second opening.

[0085] G Gate valve W Substrate 10 Conveying device 11 Storage unit 12 Cassette 121 Stage 122 Drive unit 13 Robot arm 130 End effector 14 Moving mechanism 150 Control unit 151 Battery 152 Sensor 153 Sensor 20 Connector unit 200 Positioning pin 201 Connector 30 Consumable part 40 Processing device 41 Control unit 41a Computer 41a1 Processing unit 41a2 Memory unit 41a3 Communication interface 410 Plasma processing chamber 410a Opening 410s Plasma processing space 411 Substrate support unit 4111 Main body 41110 Base 41111 Electrostatic chuck 4112 Ring assembly 413 Shower head 420 Gas supply unit 43 Connector unit 430 Power supply 431 RF power supply 432 DC power supply 440 Exhaust system 44 Lift pin 45 Drive unit

Claims

1. A cleaning method for cleaning the inside of a transport device that transports objects, comprising: (a) a step of connecting a first opening of a processing device that processes substrates with a second opening of the transport device; and (b) a step of supplying a cleaning gas into the processing device, thereby supplying the cleaning gas into the transport device through the first opening and the second opening.

2. The cleaning method according to claim 1, further comprising: (c) a step performed after step (b) of supplying a purge gas into the processing device to purge the inside of the transport device with the purge gas through the first opening and the second opening.

3. A cleaning method as described in claim 1 or 2, further comprising: (d) a step, executed after step (c), of determining the cleanliness of the gas in the conveying device using a sensor provided in the conveying device; and step (b) being executed again if it is determined that the cleanliness of the gas in the conveying device has not reached a predetermined cleanliness level.

4. The cleaning method according to claim 1, wherein the cleaning gas is ozone gas or nitrogen trifluoride gas.

5. The cleaning method of claim 1, wherein in step (b), the components in the transport device are heated.

6. The cleaning method according to claim 1, further comprising: (e) a step performed after step (b) of generating plasma from the cleaning gas in the processing device, thereby supplying activated species contained in the plasma into the transport device through the first opening and the second opening.

7. The cleaning method according to claim 6, further comprising: (c) a step performed after step (e) of supplying a purge gas into the processing device to purge the inside of the transport device with the purge gas through the first opening and the second opening.

8. A cleaning method as described in claim 6 or 7, further comprising: (d) a step, executed after step (c), of determining the cleanliness of the gas in the conveying device using a sensor provided in the conveying device; and step (e) being executed again if it is determined that the cleanliness of the gas in the conveying device has not reached a predetermined cleanliness level.

9. The cleaning method according to claim 6, wherein the cleaning gas is oxygen gas or a gas containing carbon and fluorine.

10. The cleaning method of claim 6, wherein in step (e), the components within the transport device are heated.

11. The cleaning method according to claim 1, wherein the transporting device is provided with a first exhaust pipe communicating with a space within the transporting device, and in step (a), the first exhaust pipe is connected to a second exhaust pipe of the processing device, and the gas within the transporting device is exhausted via the first exhaust pipe and the second exhaust pipe.

12. The cleaning method of claim 1, further comprising: (f) a step of reducing the pressure inside the transport device to a pressure lower than that inside the processing device, performed between steps (a) and (b); and (g) a step of opening a first gate valve provided at the first opening and a second gate valve provided at the second opening, performed between steps (f) and (b), when the pressure inside the transport device becomes lower than that inside the processing device.

13. The cleaning method according to claim 1, further comprising: (h) a step performed between steps (a) and (b), in which a purge gas is supplied into the processing device, thereby purging the inside of the transport device with the purge gas through the first opening and the second opening.

Citation Information

Patent Citations

  • Cleaning method for multichamber processing system

    JP1995086187A

  • Semiconductor device manufacturing method, cleaning method and substrate processing apparatus

    JP2012019194A

  • Part conveyance device and processing system

    JP2021136359A