Optoelectronic interconnection packaging structure and preparation method therefor

Abstract

An optoelectronic interconnection packaging structure and a preparation method therefor. A first through via (101) penetrating through a glass substrate (100) from top to bottom is formed by using a first laser method, and a second through via (102) penetrating through the glass substrate (100) from bottom to top is formed by using a second laser method; and the formed second through via (102) and the formed first through via (101) are arranged in a staggered manner, so that a high-performance TGV interposer having a small spacing, being suitable for high-density configuration, and effectively preventing overlapping of metal pillars can be prepared on the glass substrate (100) on the basis of a laser method. Furthermore, an optical waveguide layer is arranged within the glass substrate (100) and a redistribution layer, and an electrical chip (701) is connected to an optical chip (702) by means of the TGV interposer, such that metal wiring can be more flexible, and optoelectronic interconnection integration can be realized, thereby reducing packaging size, reducing power consumption, and improving reliability. Moreover, the present invention is suitable for high-density integrated packaging, and can realize good optoelectronic signal transmission.

Description

Optoelectronic interconnection package structure and preparation method thereof TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor, and relates to an optoelectronic interconnection package structure and a preparation method thereof. BACKGROUND

[0002] Optical signals have excellent performances such as low signal attenuation, low energy consumption, high bandwidth and CMOS compatibility. It is generally believed in the industry that introducing optical technology into semiconductor processes can not only reduce chip size, cost and power consumption, but also improve reliability, so that functional chips can be connected by optical fibers in an edge coupling manner. However, with the reduction of chip spacing, the application mode of optical fiber coupling is limited.

[0003] In semiconductor 2.5D / 3D packaging, organic adapter plates, through-silicon via (TSV) adapter plates and through-glass via (TGV) adapter plates are the mainstream adapter plate materials. The main purpose of setting the adapter plate is to solve some challenges in semiconductor packaging, such as improving integration, reducing cost and improving electrical performance.

[0004] Among them, since glass is an insulating material, its dielectric constant is low (about 1 / 3 of that of silicon), and its loss factor is small (about 2-3 orders of magnitude smaller than that of silicon), and its high-frequency performance is excellent, which enables glass to significantly reduce insertion loss and crosstalk at high frequencies. However, the key problem faced by TGV technology is the lack of a deep etching process similar to silicon, making it difficult to quickly manufacture glass deep holes or trenches with high aspect ratio. Traditional TGV adapter plate preparation methods include sandblasting, mechanical drilling, dry etching, wet etching, focused discharge and laser methods. However, all of the above methods have obvious shortcomings. The most widely used method at present is the laser method. However, because the energy curve excited by the laser itself is a Gaussian energy curve, the glass via formed by the laser method is tapered and cannot form a 90° vertical hole. Therefore, when high-density openings are made, the over layer phenomenon may occur on the upper part of the hole, causing the metal in the adjacent opening to be in contact. In order to avoid the over layer phenomenon, the pitch of the adjacent TGV hole needs to be increased, so that the existing laser method cannot be applied to the preparation of high-density and high-performance products.

[0005] Therefore, it is necessary to provide an optoelectronic interconnection package structure and a preparation method thereof. SUMMARY

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present application is to provide an optoelectronic interconnection package structure and a preparation method thereof, which solves the problem of limited application of optical fiber coupling in the prior art.

[0007] To achieve the above object and other related objects, the present application provides a preparation method of an optoelectronic interconnection packaging structure, comprising the following steps:

[0008] A glass substrate is provided, which comprises a first surface and a second surface arranged oppositely;

[0009] A first through-hole is formed from the top to the bottom of the glass substrate by using a first laser method, and a second through-hole is formed from the bottom to the top of the glass substrate by using a second laser method, wherein the second through-hole is arranged alternately with the first through-hole;

[0010] A first TGV metal column is formed in the first through-hole to fill the first through-hole, and a second TGV metal column is formed in the second through-hole to fill the second through-hole;

[0011] A first groove is formed in the glass substrate by using a third laser method from the first surface of the glass substrate;

[0012] A first optical waveguide layer is formed in the first groove;

[0013] A first rewiring layer is formed on the first surface of the glass substrate, and a second rewiring layer is formed on the second surface of the glass substrate, wherein the first rewiring layer and the second rewiring layer are respectively electrically connected with the first TGV metal column and the second TGV metal column;

[0014] The first rewiring layer is patterned to form a second groove in the first rewiring layer, and the second groove exposes the first optical waveguide layer;

[0015] A second optical waveguide layer is formed in the second groove, and the second optical waveguide layer is connected with the first optical waveguide layer;

[0016] An electrical chip and an optical chip with a photosensitive region are provided, and the electrical chip and the optical chip are bonded on the first rewiring layer, wherein the electrical chip and the optical chip are electrically connected with the first rewiring layer, and the photosensitive region of the optical chip is arranged correspondingly with the second optical waveguide layer.

[0017] Optionally, the first laser method comprises a laser ablation method or a laser-induced denaturation etching method; the second laser method comprises a laser ablation method or a laser-induced denaturation etching method; and the third laser method comprises a laser ablation method or a laser-induced denaturation etching method.

[0018] Optionally, the first TGV metal column and the second TGV metal column are formed synchronously, and the method for forming the first TGV metal column and the second TGV metal column comprises chemical plating or electroplating.

[0019] Optionally, the method for forming the first re-wiring layer on the first surface of the glass substrate comprises a semiconductor process method or a substrate bonding method; the method for forming the second re-wiring layer on the second surface of the glass substrate comprises a semiconductor process method or a substrate bonding method.

[0020] Optionally, the distance between the adjacent first via and the second via ranges from 80 to 100 μm.

[0021] Optionally, the thickness of the glass substrate ranges from 100 to 300 μm.

[0022] Optionally, the method further comprises the step of forming a metal mirror on the sidewall of the first groove; the method further comprises the step of forming a convex lens on the second optical waveguide layer; the method further comprises the step of forming a metal bump on the second re-wiring layer.

[0023] The present application also provides an optoelectronic interconnection packaging structure, which comprises:

[0024] a glass substrate, the glass substrate comprising a first surface and a second surface arranged oppositely;

[0025] a first via, the first via being prepared by a first laser method, and the first via penetrating the glass substrate from top to bottom from the first surface of the glass substrate;

[0026] a second via, the second via being prepared by a second laser method, and the second via penetrating the glass substrate from bottom to top from the second surface of the glass substrate, wherein the second via and the first via are arranged alternately;

[0027] a first TGV metal column, the first TGV metal column filling the first via;

[0028] a second TGV metal column, the second TGV metal column filling the second via;

[0029] a first groove, the first groove being prepared by a third laser method, and the first groove extending into the glass substrate from the first surface of the glass substrate;

[0030] a first optical waveguide layer, the first optical waveguide layer being located in the first groove;

[0031] a first re-wiring layer, the first re-wiring layer being located on the first surface of the glass substrate, and the first re-wiring layer being electrically connected with the first TGV metal column and the second TGV metal column;

[0032] a second rewiring layer on the second surface of the glass substrate, the second rewiring layer being electrically connected with the first TGV metal column and the second TGV metal column;

[0033] a second groove in the first rewiring layer, the second groove exposing the first optical waveguide layer;

[0034] a second optical waveguide layer in the second groove, the second optical waveguide layer being connected with the first optical waveguide layer;

[0035] an electrical chip and an optical chip with a light sensing region, the electrical chip and the optical chip being bonded on the first rewiring layer, the electrical chip and the optical chip being electrically connected with the first rewiring layer, and the light sensing region of the optical chip being arranged correspondingly to the second optical waveguide layer.

[0036] Optionally, the distance between the adjacent first TGV metal column and the second TGV metal column ranges from 80 to 100 μm; the first TGV metal column and the second TGV metal column have the same topography.

[0037] Optionally, a metal mirror is further arranged on the sidewall of the first groove; a convex lens is further arranged on the second optical waveguide layer; and a metal bump is further arranged on the second rewiring layer.

[0038] As described above, the photoelectric interconnection packaging structure and the preparation method thereof adopt the first laser method to form the first through hole penetrating through the glass substrate from top to bottom, and the second laser method to form the second through hole penetrating through the glass substrate from bottom to top, and the second through hole is arranged staggeredly with the first through hole, so that the application can prepare the high-performance TGV adapter with smaller distance and suitable for high-density arrangement based on the laser method, and the metal column overlap can be effectively avoided; further, the optical waveguide layer is arranged in the glass substrate and the rewiring layer, and the electrical chip and the optical chip are connected in combination with the TGV adapter, so that the metal wiring is more flexible, the photoelectric interconnection integration is realized, the packaging size is reduced, the power consumption is lowered, the reliability is improved, and the application is suitable for high-density integrated packaging, and good photoelectric signal transmission can be realized. BRIEF DESCRIPTION OF DRAWINGS

[0039] Fig. 1 shows a flow diagram of preparing the photoelectric interconnection packaging structure in the embodiment of the application.

[0040] Fig. 2 shows a structure diagram after forming the first through hole and the second through hole in the embodiment of the application.

[0041] Fig. 3 shows a partial enlarged view of area A in Fig. 2.

[0042] Figure 4 shows a schematic diagram of the structure after forming the first TGV metal post and the second TGV metal post in an embodiment of the present application.

[0043] Figure 5 shows a schematic diagram of the structure after forming the first recess in an embodiment of the present application.

[0044] Figure 6 shows a schematic diagram of the structure after forming the metal mirror in an embodiment of the present application.

[0045] Figure 7 shows a schematic diagram of the structure after forming the first optical waveguide layer in an embodiment of the present application.

[0046] Figure 8 shows a schematic diagram of the structure after forming the first re- wiring layer and the second re-wiring layer in an embodiment of the present application.

[0047] Figure 9 shows a schematic diagram of the structure after forming the second recess in an embodiment of the present application.

[0048] Figure 10 shows a schematic diagram of the structure after forming the second optical waveguide layer in an embodiment of the present application.

[0049] Figure 11 shows a schematic diagram of the structure after forming the convex lens in an embodiment of the present application.

[0050] Figure 12 shows a schematic diagram of the structure after bonding the electrical chip, the optical chip and forming the metal bump in an embodiment of the present application.

[0051] 100 101 102 103 104 201 202 300 401 402 501 502 600 701 702 712 800 DETAILED DESCRIPTION

[0052] Those skilled in the art will readily understand that the application is well adapted to carry out the objects and obtain the ends and advantages mentioned, as well as those inherent therein, and that the same can be readily carried out by others skilled in the art using the present description and the accompanying drawings, without departing from the spirit and scope of the application. Accordingly, references should be made to the drawing Figures, and the specification as a whole, to more fully understand the scope of the application.

[0053] In the following detailed description of embodiments of the application, numerous specific details are set forth in order to provide a thorough understanding of the application. However, there can be embodiments of the application to which the specific details are not needed. In other instances, well-known methods, procedures, components, and networks have not been described in detail so as not to obscure aspects of the application. In this description and in the following claims, the singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. In this description and in the following claims, the terms "comprises", "comprising", "has", "having", "includes", "including", "contains", "containing" or variations of them mean "including but not limited to", and are not intended to exclude other moieties, additives, components, integers or steps.

[0054] For convenience of description, spatial relationship words such as "under", "below", "lower", "underneath", "above", "upper" and the like can be used herein to describe the relationship of one element or feature to another element or feature as shown in the drawings. It will be understood that these spatial relationship words are intended to encompass different orientations of the device in use or operation, in addition to the orientations depicted in the drawings. For example, the spatial relationship words can include embodiments in which the first and second features are arranged in direct contact, and embodiments in which other features are arranged between the first and second features such that the first and second features can not be in direct contact. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers can also be present.

[0055] It should be noted that the diagrams provided in the embodiments only schematically illustrate the basic concepts of the present application, and thus only the components related to the present application are shown in the diagrams, rather than being drawn according to the number, shape and size of the components in actual implementation. The shapes, number and proportions of the components in actual implementation can be arbitrarily changed, and the layout pattern of the components can be more complex.

[0056] Referring to FIG. 1, the present embodiment provides a preparation method of an optoelectronic interconnection packaging structure, which can be used to prepare a high-performance TGV adapter plate with small pitch, suitable for high-density arrangement, and capable of effectively avoiding overlapping of metal columns, based on a laser method; further, an optical waveguide layer is arranged in the glass substrate and the re-routed layer, and the TGV adapter plate is used to connect the electrical chip and the optical chip, so that the metal wiring is more flexible, optoelectronic interconnection integration is realized, the packaging size is reduced, the power consumption is lowered, the reliability is improved, and the optoelectronic interconnection packaging structure is suitable for high-density integrated packaging and can achieve good optoelectronic signal transmission.

[0057] The preparation of the optoelectronic interconnection packaging structure will be further described below with reference to FIGS. 2-12, which specifically includes the following steps:

[0058] First, referring to FIGS. 1 and 2, a glass substrate 100 is provided in step S1. The glass substrate 100 includes a first surface and a second surface arranged oppositely.

[0059] Specifically, the glass substrate 100 can include a wafer-level glass substrate, such as a 4-inch, 6-inch, 8-inch, 12-inch, etc. The thickness of the glass substrate 100 can be 100-300 μm, such as 100 μm, 200 μm, 300 μm, etc. However, the size of the glass substrate 100 is not limited thereto, and can be set as needed, which is not limited herein.

[0060] Next, referring to FIG. 1 and FIG. 2, a first through hole 101 is formed through the glass substrate 100 from top to bottom by a first laser method from a first surface of the glass substrate 100, and a second through hole 102 is formed through the glass substrate 100 from bottom to top by a second laser method from a second surface of the glass substrate 100, wherein the second through hole 102 is staggered with the first through hole 101.

[0061] Specifically, most of the existing methods for preparing TGV adapter plates use laser methods to prepare TGV holes in the glass substrate, but the TGV holes formed by the laser method are conical, referring to the morphology of the first through hole 101 and the second through hole 102 in FIG. 2, therefore, to avoid the over layer phenomenon between the TGV holes, the distance between the TGV holes is usually increased in the process, such as setting the pitch of adjacent TGV holes to 120-150 μm, this way of increasing the pitch to avoid over layer is difficult to apply to high-density products. Therefore, referring to FIG. 2, in this embodiment, the laser method is ingeniously implemented on the first surface and the second surface of the glass substrate 100 respectively, so that the first through hole 101 and the second through hole 102 staggered in the glass substrate 100 can be formed, thereby effectively avoiding over layer and reducing the pitch between adjacent first through holes 101 and second through holes 102, so that the finally prepared TGV adapter plate can be applied to high-density and high-performance products.

[0062] Wherein, the first laser method can include, such as laser ablation or laser-induced denaturation etching method; similarly, the second laser method can include, such as laser ablation or laser-induced denaturation etching method, and according to the need, the first laser method and the second laser method preferably use the same preparation method to reduce the process complexity and facilitate the management and operation of the process, but not limited to this, according to the need, the first laser method and the second laser method can also use different preparation methods. The specific operation of laser ablation and laser-induced denaturation etching method is not repeated here, and can be referred to the existing preparation method.

[0063] Referring to Fig. 3, a partial enlarged view of region A in Fig. 2 is shown, wherein the first via hole 101 is formed by laser method, so that the first via hole 101 has an opening width greater than a bottom width. Similarly, the second via hole 102 is formed by laser method, so that the second via hole 102 has an opening width greater than a bottom width. The first via hole 101 and the second via hole 102 are arranged in an overlapping manner, so that the first via hole 101 and the second via hole 102 can make full use of the effective space of the glass substrate 100, and the distance D between the adjacent first via hole 101 and the second via hole 102 can be reduced. The distance D between the adjacent first via hole 101 and the second via hole 102 can be in the range of 80-100 μm, such as 80 μm, 90 μm, 100 μm, etc. Since the first via hole 101 and the second via hole 102 are arranged in an overlapping manner, an effective spacing region can be formed between the first via hole 101 and the second via hole 102, so as to effectively avoid the over layer phenomenon, improve the density of TGV hole distribution, and realize the preparation of high-quality products.

[0064] Next, referring to Fig. 1 and Fig. 4, step S3 is performed to form a first TGV metal column 201 filling the first via hole 101 in the first via hole 101, and a second TGV metal column 202 filling the second via hole 102 in the second via hole 102.

[0065] Specifically, the first TGV metal column 201 and the second TGV metal column 202 are preferably formed synchronously to reduce the preparation process steps. Of course, the first TGV metal column 201 and the second TGV metal column 202 can also be prepared in steps according to needs, which is not limited herein.

[0066] The method for forming the first TGV metal column 201 can include, for example, chemical plating or electroplating. The method for forming the second TGV metal column 202 can include, for example, chemical plating or electroplating. The specific preparation method of the first TGV metal column 201 and the second TGV metal column 202 is not limited herein. The specific operation of chemical plating or electroplating is not repeated here, and can be referred to the existing preparation method.

[0067] In this embodiment, the material of the first TGV metal column 201 and the second TGV metal column 202 is copper metal, but the material of the TGV metal column is not limited to this, and other conductive metal materials can also be used.

[0068] Further, after the first via hole 101 and the second via hole 102 are prepared by the laser method, in order to facilitate the formation of the first TGV metal column 201 and the second TGV metal column 202 which fill the via hole, the first via hole 101 and the second via hole 102 can be subjected to surface treatment such as wet etching, so that the first via hole 101 and the second via hole 102 have smooth inner surfaces. The method of surface treatment is not limited here.

[0069] Further, after the first TGV metal column 201 and the second TGV metal column 202 are formed, in order to facilitate the preparation of the subsequent rewiring layer, the glass substrate 100 can be subjected to surface treatment such as grinding, wet etching, etc. to avoid electrical connection between the TGV metal columns and obtain a flat surface.

[0070] Next, referring to FIG. 1 and FIG. 5, step S4 is performed to form a first groove 103 in the glass substrate 100 by a third laser method from the first surface of the glass substrate 100.

[0071] The third laser method can include, for example, laser ablation or laser-induced phase change etching, and preferably the first laser method, the second laser method and the third laser method use the same preparation method to reduce process complexity and facilitate process management and operation, but are not limited thereto. According to needs, the first laser method, the second laser method and the third laser method can also use different preparation methods.

[0072] Since the first groove 103 is prepared by the laser method, the opening width of the first groove 103 is greater than the bottom width, that is, the sidewall of the first groove 103 has an inclined surface, which is beneficial to the subsequent transmission of optical signals. The inclination angle of the inclined surface can be set according to specific needs, which is not limited here.

[0073] Next, referring to FIG. 1, FIG. 6 and FIG. 7, step S5 is performed to form a first optical waveguide layer 401 in the first groove 103.

[0074] To reduce optical loss and improve optical transmission efficiency, in the present embodiment, a metal mirror 300 is preferably formed on the sidewall of the first groove 103, such as a titanium metal mirror prepared by sputtering and etching. The metal mirror 300 formed can also cover the bottom of the first groove 103, which is not limited here.

[0075] The first optical waveguide layer 401 can be prepared by a semiconductor process, i.e., by coating, exposure, development, etching, etc. The first optical waveguide layer 401 can include an organic polymer optical waveguide wiring layer, a silicon-based optical waveguide wiring layer, a lithium niobate optical waveguide wiring layer, or a lithium borate optical waveguide wiring layer, etc.

[0076] Next, referring to FIGS. 1 and 8, step S6 is performed to form a first re-wiring layer 501 on the first surface of the glass substrate 100 and a second re-wiring layer 502 on the second surface of the glass substrate 100, wherein the first re-wiring layer 501 and the second re-wiring layer 502 are respectively electrically connected to the first TGV metal column 201 and the second TGV metal column 202.

[0077] Specifically, the method for forming the first re-wiring layer 501 on the first surface of the glass substrate 100 can include a semiconductor process or a substrate bonding method, and similarly, the method for forming the second re-wiring layer 502 on the second surface of the glass substrate 100 can include a semiconductor process or a substrate bonding method.

[0078] The semiconductor process is a method for preparing the first re-wiring layer 501 and the second re-wiring layer 502 on the glass substrate 100 by coating, exposure, development, deposition, etching, etc., and the substrate bonding method is a method for directly bonding the first re-wiring layer 501 and the second re-wiring layer 502 to the glass substrate 100 after preparing the first re-wiring layer 501 and the second re-wiring layer 502 in advance.

[0079] The specific preparation of the first re-wiring layer 501 and the second re-wiring layer 502 is not limited here, and the same preparation method can be used, or different preparation methods can be used. The specific material and structure of the first re-wiring layer 501 and the second re-wiring layer 502 are not limited here and can be selected as needed.

[0080] Next, referring to FIGS. 1 and 9, step S7 is performed to pattern the first re-wiring layer 501 to form a second recess 104 in the first re-wiring layer 501, and the second recess 104 exposes the first optical waveguide layer 401.

[0081] Specifically, the etching method for the first re-wiring layer 501 can be selected as needed, and the morphology of the second recess 104 is not limited here.

[0082] Then, referring to FIG. 1 and FIG. 10, a second optical waveguide layer 402 is formed in the second groove 104, and the second optical waveguide layer 402 is connected with the first optical waveguide layer 401, in step S8.

[0083] Specifically, the second optical waveguide layer 402 can be prepared by semiconductor process, i.e. by coating, exposure, development, etching and other steps, and the second optical waveguide layer 402 can include organic polymer optical waveguide wiring layer, silicon-based optical waveguide wiring layer, lithium niobate optical waveguide wiring layer or lithium borate optical waveguide wiring layer, etc. Preferably, the preparation and material of the second optical waveguide layer 402 are the same as those of the first optical waveguide layer 401, so as to reduce the process complexity.

[0084] Referring to FIG. 11, further, a convex lens 600 is formed on the second optical waveguide layer 402, so as to play a role of light condensation through the convex lens 600, so as to further reduce the light loss. The preparation method of the convex lens 600 is not limited here, and can be bonding, but is not limited thereto.

[0085] Then, referring to FIG. 1 and FIG. 12, an electric chip 701 and an optical chip 702 with a photosensitive area 712 are provided, and the electric chip 701 and the optical chip 702 are bonded on the first re-wiring layer 501, in step S9. The electric chip 701 and the optical chip 702 are electrically connected with the first re-wiring layer 501, and the photosensitive area 712 of the optical chip 702 is arranged correspondingly to the second optical waveguide layer 402.

[0086] Specifically, referring to FIG. 12, the electrically leading ends of the electric chip 701 and the optical chip 702 are electrically connected with the first re-wiring layer 501 through metal bumps, and the photosensitive area 712 of the optical chip 702 is arranged correspondingly to the second optical waveguide layer 402, so as to form an optical transmission path together with the first optical waveguide layer 401, as shown by the dashed line with arrow in FIG. 12.

[0087] Further, referring to FIG. 12, metal bumps 800 or the like can also be formed on the surface of the second re-wiring layer 502, so as to facilitate subsequent electrical connection.

[0088] It can be understood that, in order to improve the production capacity, the optoelectronic interconnection packaging structure in FIG. 12 can be regarded as a single structure formed after a cutting process. Of course, according to needs, the optoelectronic interconnection packaging structure in FIG. 12 can also be a single structure directly prepared without a cutting process, which is not limited here.

[0089] Referring to FIGS. 2-12, the embodiment further provides an optoelectronic interconnection packaging structure, wherein the optoelectronic interconnection packaging structure can be directly prepared by using the above preparation process, so that the material, structure, etc. of the optoelectronic interconnection packaging structure can be referred to the above content. Of course, according to the needs, the optoelectronic interconnection packaging structure can also be prepared by using other preparation processes.

[0090] In the embodiment, the optoelectronic interconnection packaging structure comprises:

[0091] a glass substrate 100, the glass substrate 100 comprising a first surface and a second surface arranged oppositely;

[0092] a first via hole 101, the first via hole 101 being prepared by using a first laser method, and the first via hole 101 penetrating through the glass substrate 100 from top to bottom from the first surface of the glass substrate 100;

[0093] a second via hole 102, the second via hole 102 being prepared by using a second laser method, and the second via hole 102 penetrating through the glass substrate 100 from bottom to top from the second surface of the glass substrate 100, wherein the second via hole 102 is arranged staggeredly with the first via hole 101;

[0094] a first TGV metal column 201, the first TGV metal column 201 filling the first via hole 101;

[0095] a second TGV metal column 202, the second TGV metal column 202 filling the second via hole 102;

[0096] a first recess 103, the first recess 103 being prepared by using a third laser method, and the first recess 103 extending into the glass substrate 100 from the first surface of the glass substrate 100;

[0097] a first optical waveguide layer 401, the first optical waveguide layer 401 being located in the first recess 103;

[0098] a first rewiring layer 501, the first rewiring layer 501 being located on the first surface of the glass substrate 100, and the first rewiring layer 501 being electrically connected with the first TGV metal column 201 and the second TGV metal column 202;

[0099] a second rewiring layer 502, the second rewiring layer 502 being located on the second surface of the glass substrate 100, and the second rewiring layer 502 being electrically connected with the first TGV metal column 201 and the second TGV metal column 202;

[0100] A second recess 104 is located in the first re-wiring layer 501, and the second recess 104 exposes the first optical waveguide layer 401;

[0101] A second optical waveguide layer 402 is located in the second recess 104, and the second optical waveguide layer 402 is connected with the first optical waveguide layer 401;

[0102] An electrical chip 701 and an optical chip 702 with a light sensing area 712 are bonded on the first re-wiring layer 501, the electrical chip 701 and the optical chip 702 are both electrically connected with the first re-wiring layer 501, and the light sensing area 712 of the optical chip 702 is arranged correspondingly with the second optical waveguide layer 402.

[0103] Wherein, the distance D between the adjacent first TGV metal column 201 and the second TGV metal column 202 can be in the range of 80-100 μm, such as 80 μm, 90 μm, 100 μm, etc., and since the first via hole 101 and the second via hole 102 are arranged in overlapping manner, the first TGV metal column 201 and the second TGV metal column 202 are arranged in overlapping manner, and an effective spacing area can be formed therebetween to effectively avoid over layer phenomenon, improve the density of TGV metal column distribution, and prepare high-quality products.

[0104] Wherein, the glass substrate 100 can include a wafer-level glass substrate, such as 4 inches, 6 inches, 8 inches, 12 inches, etc., and the thickness of the glass substrate 100 can be 100-300 μm, such as 100 μm, 200 μm, 300 μm, etc., but the size of the glass substrate 100 is not limited thereto, and can be set as needed, which is not limited here.

[0105] Wherein, the first TGV metal column 201 and the second TGV metal column 202 can have the same topography, and the first TGV metal column 201 and the second TGV metal column 202 are shown in FIG. 12 as being conical and having the same topography, but are not limited thereto, such as the first TGV metal column 201 and the second TGV metal column 202 can also be conical with different sizes, and can be realized by adjusting the laser process, etc., to meet the specific product requirements, which is not limited here.

[0106] Referring to FIGS. 6 and 12, in order to reduce light loss and improve light transmission efficiency, a metal mirror 300 is preferably arranged on the sidewall of the first recess 103, and of course the metal mirror 300 can also cover the bottom of the first recess 103 as needed, which is not limited here.

[0107] Further, referring to FIG. 12, a convex lens 600 is preferably arranged on the second optical waveguide layer 402 to play a role of light collection through the convex lens 600, so as to further reduce light loss.

[0108] Further, referring to FIG. 12, a metal bump 800 or the like can also be arranged on the surface of the second rewiring layer 502, so as to facilitate subsequent electrical connection.

[0109] In summary, the optoelectronic interconnection packaging structure and the preparation method thereof adopt the first laser method to form the first through hole penetrating through the glass substrate from top to bottom, and the second laser method to form the second through hole penetrating through the glass substrate from bottom to top, and the second through hole is arranged staggered with the first through hole, so that the application can prepare the high-performance TGV adapter with smaller pitch and suitable for high-density arrangement based on the laser method on the glass substrate; further, the optical waveguide layer is arranged in the glass substrate and the rewiring layer, and the electrical chip and the optical chip are connected in combination with the TGV adapter, so that the metal wiring is more flexible, the optoelectronic interconnection integration is realized, the packaging size is reduced, the power consumption is reduced, the reliability is improved, and the application is suitable for high-density integrated packaging, and good optoelectronic signal transmission can be realized.

[0110] The above embodiments only exemplarily illustrate the principles and effects of the application, and are not used to limit the application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the application. Therefore, all equivalent modifications or changes completed by those skilled in the art without departing from the spirit and technical thought of the application should be covered by the claims of the application.

Claims

1. A method of fabricating an optoelectronic interconnect package structure, comprising: The method comprises the following steps: ​ providing a glass substrate comprising a first surface and a second surface arranged oppositely; forming a first via hole through the glass substrate from top to bottom by a first laser method from the first surface of the glass substrate, and forming a second via hole through the glass substrate from bottom to top by a second laser method from the second surface of the glass substrate, wherein the second via hole is arranged alternately with the first via hole; forming a first TGV metal column in the first via hole to fill the first via hole, and forming a second TGV metal column in the second via hole to fill the second via hole; forming a first groove in the glass substrate by a third laser method from the first surface of the glass substrate, wherein the bottom of the first groove is located in the glass substrate; forming a first optical waveguide layer in the first groove; forming a first rewiring layer on the first surface of the glass substrate, and forming a second rewiring layer on the second surface of the glass substrate, wherein the first rewiring layer and the second rewiring layer are electrically connected with the first TGV metal column and the second TGV metal column respectively; patterning the first rewiring layer to form a second groove in the first rewiring layer, and the second groove exposes the first optical waveguide layer; forming a second optical waveguide layer in the second groove, and the second optical waveguide layer is connected with the first optical waveguide layer; providing an electrical chip and an optical chip with a photosensitive region, and bonding the electrical chip and the optical chip on the first rewiring layer, wherein the electrical chip and the optical chip are electrically connected with the first rewiring layer, and the photosensitive region of the optical chip is arranged correspondingly with the second optical waveguide layer.

2. The method of claim 1, wherein: The first laser method comprises a laser ablation method or a laser-induced denaturation etching method; the second laser method comprises a laser ablation method or a laser-induced denaturation etching method; and the third laser method comprises a laser ablation method or a laser-induced denaturation etching method.

3. The method of claim 1, wherein: The first TGV metal column and the second TGV metal column are formed synchronously, and the method for forming the first TGV metal column and the second TGV metal column comprises chemical plating or electroplating.

4. The method of claim 1, wherein: The method for forming the first rewiring layer on the first surface of the glass substrate comprises a semiconductor process method or a substrate bonding method; and the method for forming the second rewiring layer on the second surface of the glass substrate comprises a semiconductor process method or a substrate bonding method.

5. The method of claim 1, wherein: The distance between the adjacent first via hole and the second via hole ranges from 80 μm to 100 μm.

6. The method of claim 1, wherein: The thickness of the glass substrate ranges from 100 μm to 300 μm.

7. The method of claim 1, wherein: The method further comprises the steps of forming a metal mirror on the sidewall of the first groove, forming a convex lens on the second optical waveguide layer, and forming a metal bump on the second rewiring layer.

8. An optoelectronic interconnect package structure, comprising: The optoelectronic interconnection packaging structure comprises: a glass substrate comprising a first surface and a second surface arranged oppositely; a first via hole prepared by a first laser method, and the first via hole passes through the glass substrate from top to bottom from the first surface of the glass substrate; a second via hole, the second via hole being prepared by a second laser method, and the second via hole penetrating through the glass substrate from the second surface of the glass substrate, wherein the second via hole is staggered with the first via hole; a first TGV metal column, the first TGV metal column filling the first via hole; a second TGV metal column, the second TGV metal column filling the second via hole; a first groove, the first groove being prepared by a third laser method, and the first groove extending into the glass substrate from the first surface of the glass substrate; a first optical waveguide layer, the first optical waveguide layer being located in the first groove; a first rewiring layer, the first rewiring layer being located on the first surface of the glass substrate, and the first rewiring layer being electrically connected with the first TGV metal column and the second TGV metal column; a second rewiring layer, the second rewiring layer being located on the second surface of the glass substrate, and the second rewiring layer being electrically connected with the first TGV metal column and the second TGV metal column; a second groove, the second groove being located in the first rewiring layer, and the second groove exposing the first optical waveguide layer; a second optical waveguide layer, the second optical waveguide layer being located in the second groove, and the second optical waveguide layer being connected with the first optical waveguide layer; an electric chip and an optical chip with a photosensitive area, the electric chip and the optical chip being bonded on the first rewiring layer, the electric chip and the optical chip being electrically connected with the first rewiring layer, and the photosensitive area of the optical chip being correspondingly arranged with the second optical waveguide layer.

9. The optoelectronic interconnect package structure of claim 8, wherein: The distance between the first TGV metal column and the second TGV metal column ranges from 80 to 100 μm, and the first TGV metal column and the second TGV metal column have the same morphology.

10. The optoelectronic interconnect package structure of claim 8, wherein: The metal mirror is further located on the sidewall of the first groove, the convex lens is further located on the second optical waveguide layer, and the metal convex block is further located on the second rewiring layer.

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