Substrate processing device and substrate processing method

Abstract

This substrate processing device is provided with a stage, a processing container, and a radical supply unit. The stage includes a substrate support surface for supporting a substrate on which a film is formed, and is configured to rotate the substrate on the substrate support surface. The processing container includes a radical supply port positioned in a vertical direction with respect to an outer peripheral end of the substrate. The radical supply unit is configured to clean an outer peripheral portion of the rotating substrate by irradiating the outer peripheral portion with etching gas radicals from the radical supply port.

Description

Substrate processing apparatus and substrate processing method

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

[0002] For example, Patent Document 1 discloses a substrate processing apparatus that "suppresses the edge gas introduced into the edge region of the substrate from diffusing into the center region of the substrate."

[0003] Furthermore, Patent Document 2 discloses that "a method for etching a bevel edge of a substrate is provided. The method includes providing a substrate having a bevel edge after a film has been deposited on an upper surface of the substrate, and rotating the substrate about its central axis. The method also includes etching the bevel edge by directing a flow of atmospheric pressure plasma onto the bevel edge during rotation."

[0004] JP 2013-21050 A JP 2023-64727 A

[0005] The present disclosure provides a substrate processing apparatus and a substrate processing method that can clean the outer periphery of a substrate while reducing the thermal influence on the center of the substrate.

[0006] In one aspect of the present disclosure, a substrate processing apparatus includes a stage, a processing vessel, and a radical supply unit. The stage has a substrate support surface that supports a substrate on which a film has been formed and is configured to rotate the substrate on the substrate support surface. The processing vessel has a radical supply port positioned vertically relative to the outer periphery of the substrate. The radical supply unit is configured to clean the outer periphery of the rotating substrate by irradiating it with radicals of an etching gas from the radical supply port.

[0007] According to the present disclosure, it is possible to clean the outer periphery of a substrate while reducing the thermal influence on the central portion of the substrate.

[0008] Fig. 1 is a schematic cross-sectional view of a substrate processing apparatus according to a first embodiment. Fig. 2 is an enlarged view of a portion of the substrate processing apparatus according to the first embodiment. Fig. 3 is a schematic cross-sectional view of a substrate processing apparatus according to a second embodiment. Fig. 4 is an enlarged view of a portion of the substrate processing apparatus according to the second embodiment. Fig. 5 is a flowchart showing an example of a substrate processing method according to an embodiment.

[0009] The following describes in detail embodiments of the disclosed substrate processing apparatus and substrate processing method with reference to the drawings. Note that the substrate processing apparatus and substrate processing method according to the present disclosure are not limited to these embodiments, and the following embodiments can be appropriately combined within the scope of the present disclosure, so long as they do not cause any contradiction between the configurations and processing contents.

[0010] Furthermore, in the embodiments described below, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in a strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc. Furthermore, the drawings referred to below are schematic for the sake of convenience. Therefore, details may be omitted, and the dimensional ratios do not necessarily correspond to the actual ones.

[0011] First Embodiment [Configuration of Substrate Processing Apparatus] An example of the configuration of a substrate processing apparatus according to a first embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic cross-sectional view of the substrate processing apparatus according to the first embodiment.

[0012] In the following description of each embodiment, a substrate W, which is an example of a wafer, may be described as being divided into a central portion centered on the central axis of the substrate W and an outer peripheral portion located outside the central portion. In this specification, the outer peripheral portion of the substrate W is composed of the front surface of the substrate W outside the central portion of the substrate W, the back surface of the substrate W outside the central portion of the substrate W, and the outer peripheral edge of the substrate W. For example, the outer peripheral portion of the substrate W may be in a range of about 10 mm to about 100 mm from the outer peripheral edge of the substrate W in the radial direction of the substrate W. Cleaning the outer peripheral portion of the substrate W refers to removing, by etching, a film adhering to the front surface of the substrate W, the back surface of the substrate W, and the outer peripheral edge of the substrate W within the above ranges constituting the outer peripheral portion of the substrate W.

[0013] The substrate processing apparatus 10 according to the first embodiment includes a processing vessel 1 and a control unit 2. The processing vessel 1 has a substantially cylindrical shape centered on a central axis Ax, is made of, for example, an aluminum alloy, and is electrically grounded. The inner wall surface of the processing vessel 1 is coated with an alumina film (Al ２ O ３ ) or yttria oxide film (Y ２ O ３ ) is coated.

[0014] The processing vessel 1 has a side portion 1b and a bottom portion 1c. A loading / unloading port 12 for a substrate W is provided in the side portion 1b. The substrate processing apparatus 10 is connected to the outside via the loading / unloading port 12. The loading / unloading port 12 is opened and closed by a gate valve GV. The bottom portion 1c is located below the side portion 1b, and the side portion 1b and the bottom portion 1c are integral with each other.

[0015] The processing vessel 1 further includes a lid 1a. The lid 1a is located above the side 1b via an insulating ring member 16 and is electrically insulated from the side 1b. The lid 1a has a space 1a1 between two parallel plate-like members. However, the lid 1a may also be a single plate-like member. The lid 1a, the side 1b, and the bottom 1c define the internal space of the processing vessel 1.

[0016] The processing vessel 1 accommodates a substrate W. The stage 11 is disposed inside the processing vessel 1, has a substrate mounting surface 11a, and holds the substrate W on the substrate mounting surface 11a. A film, such as a polymer organic film, is formed on the substrate W. The central axis of the stage 11 coincides with the central axis Ax. The stage 11 is configured such that rotation of the stage 11 rotates the substrate W on the substrate mounting surface 11a around the central axis of the stage.

[0017] The stage 11 is connected to an actuator 14 via a rotation shaft 13. The rotation shaft 13 passes through an opening 15 provided in the center of the bottom 1c and is connected to the actuator 14 outside the processing vessel 1. The actuator 14 is, for example, a motor. However, the actuator 14 is not limited to a motor as long as it is a mechanism that generates a driving force to rotate the stage 11. This allows the stage 11 to rotate the substrate W on the substrate mounting surface 11a while holding it by, for example, vacuum suction. The stage 11 may or may not have a heating mechanism such as a heater.

[0018] The substrate processing apparatus 10 further includes a shower head 20. The shower head 20 faces the stage 11 and is disposed above the stage 11. The shower head 20 has a substantially disk shape, and the central axis of the shower head 20 coincides with the central axis Ax of the processing chamber 1. The shower head 20 is supported by the lid 1a. The shower head 20 includes a plurality of gas holes 20a and a diffusion chamber 20b. The gas holes 20a are disposed in a position facing the stage 11. The diffusion chamber 20b is located above the gas holes 20a and communicates with the gas holes 20a. The diffusion chamber 20b is defined by a recess formed in the upper part of the shower head 20 and the lower surface of the lid 1a. The gas holes 20a are through-holes that penetrate from the bottom surface of the recess in the shower head 20 to the lower surface of the shower head 20 in the direction of the central axis Ax.

[0019] The processing vessel 1 further has a radical supply port 30. The radical supply port 30 is provided at one location in the lid 1a. The radical supply port 30 is located in a vertical direction relative to the outer circumferential edge Wa of the substrate W placed on the substrate placement surface 11a. A radical supply unit 31 is connected directly above the radical supply port 30 via a radical supply pipe 32. This allows the radical supply port 30 to supply radicals in the plasma generated from the etching gas by the radical supply unit 31 directly from above to one location on the outer circumferential edge of the substrate W. The radical supply unit 31 uses, for example, O as the etching gas. ２ However, the etching gas is not limited to this, and ClF ３ The radical supplier 31 may be a remote plasma source.

[0020] The gas supply pipe 22 penetrates the center of the lid 1a and communicates with the diffusion chamber 20b. The gas supply pipe 22 is connected to a gas supply unit 21 outside the processing vessel 1. The gas supply unit 21 supplies Ar gas from the gas supply pipe 22, the diffusion chamber 20b, and multiple gas holes 20a into the processing vessel 1. The Ar gas is supplied to a gap 60 between the shower head 20 and the stage 11 and flows through the gap 60 from the center of the substrate W toward the outside of the stage 11. By supplying Ar gas to the surface of the substrate W from the upper center of the processing vessel 1 in this manner, radicals are prevented from moving from the outer periphery of the substrate W to the center of the substrate W. The gas supplied by the gas supply unit 21 is not limited to Ar gas, and may be an inert gas other than Ar gas.

[0021] The stage 11 rotates the substrate W about the central axis of the stage while the radical supplier 31 irradiates the substrate W with radicals of the etching gas from the radical supply port 30. As the stage 11 rotates, radicals of the etching gas are supplied to the entire outer periphery of the substrate W. This causes the entire outer periphery of the substrate W to be etched while the entire outer periphery is locally heated by the heat of the radicals. In other words, the outer periphery of the substrate W is cleaned while the central portion of the substrate W is not heated. The diameter of the substrate mounting surface 11 a is smaller than the diameter of the substrate W. Therefore, the outer periphery of the substrate W protrudes from the side surface 11 b of the stage 11, and the front and back surfaces of the outer periphery of the substrate W are exposed to the outside of the stage 11. Therefore, by irradiating the substrate W with radicals of the etching gas from the radical supply port 30, the radical supplier 31 can clean the outer periphery of the substrate W without lifting the substrate W from the stage 11 using a pin or the like.

[0022] The radical supply port 30 penetrates the lid 1a at a position vertical to the outer circumferential edge of the substrate W so that the outer circumferential edge of the substrate W overlaps with the radical supply port 30 when the processing vessel 1 is viewed from above. The radical supply port 30 penetrates the lid 1a at one location. However, the radical supply port 30 may penetrate the lid 1a at two or more locations.

[0023] The substrate processing apparatus 10 further includes an exhaust system 40. The exhaust system 40 includes an exhaust port 41 and an exhaust pipe 42. The exhaust port 41 is provided in the bottom 1c of the processing chamber 1. The exhaust pipe 42 is connected to the exhaust port 41. The exhaust pipe 42 is connected to an exhaust device (not shown). The exhaust device includes a pressure regulating valve and a vacuum pump. The pressure inside the processing chamber 1 is regulated by the pressure regulating valve. The vacuum pump includes a turbomolecular pump, a dry pump, or a combination thereof.

[0024] The control unit 2 processes computer-executable instructions that cause the substrate processing apparatus 10 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the substrate processing apparatus 10 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the substrate processing apparatus 10. The control unit 2 may include a processing unit, a storage unit, and a communication interface. The control unit 2 may be implemented, for example, by a computer. The processing unit may be configured to perform various control operations by reading a program from the storage unit and executing the read program. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processing unit for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The processing unit may be a CPU (Central Processing Unit). The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the substrate processing apparatus 10 via a communication line such as a LAN (Local Area Network).

[0025] The configuration of the substrate processing apparatus 10 will be further described with reference to Figures 1 and 2. Figure 2 is an enlarged view of a portion of the substrate processing apparatus 10 according to the first embodiment. Specifically, Figure 2 is an enlarged view of the area within the dotted line frame E in the substrate processing apparatus 10 in Figure 1.

[0026] The radical supply port 30 is located outside the shower head 20 with respect to the central axis Ax of the processing chamber 1. The radical supply port 30 is also located outside the stage 11 with respect to the central axis Ax of the processing chamber 1.

[0027] The length a of the substrate W in the radial direction from the outer peripheral edge Wa of the substrate W to the side surface 11b of the stage 11 is, for example, 50 mm. However, the length a is not limited to this and may be, for example, within a range of 10 mm to 100 mm.

[0028] The width (height) b of the gap 60 between the shower head 20 and the substrate mounting surface 11a of the stage 11 is, for example, 0.1 mm. However, the width b is not limited to this and may be, for example, within a range of 0.05 mm to 1 mm.

[0029] The length c in the direction parallel to the radial direction of the substrate W from the outer peripheral edge Wa of the substrate W to the side surface 20c of the shower head 20 is, for example, 1 mm. However, the length c is not limited to this and may be, for example, within a range of 0 mm to 2 mm.

[0030] The etching gas radicals are supplied vertically from the radical supply port 30 to the outer periphery of the substrate W. At this time, the substrate W rotates around the central axis Ax due to the rotation of the stage 11, and the radicals are supplied to the entire outer periphery of the rotating substrate W. This allows the entire outer periphery of the substrate W to be cleaned even if the etching gas radicals are supplied to one location on the outer periphery of the substrate W. If two or more radical supply ports 30 are provided on the cover 1 a, the radicals are supplied to multiple locations on the outer periphery of the substrate W, but the radicals are supplied to only part of, and not the entire, of, the outer periphery of the substrate W. At this time, the Ar gas supplied to the gap 60 makes it difficult for the radicals to flow into the gap 60. This prevents the radicals from circulating around the gap 60. At this time, the stage 11 is not heated, and therefore the center of the substrate W is not heated. Therefore, only the outer periphery of the substrate W is selectively heated by the heat from the radicals. As a result, the substrate processing apparatus 10 can remove the film adhering to the outer periphery and clean the outer periphery of the substrate W while reducing thermal wear of the central portion of the substrate W. Furthermore, the substrate processing apparatus 10 can increase the etching rate of the outer periphery of the substrate W by locally heating the outer periphery of the substrate W with radicals.

[0031] Second Embodiment [Configuration of Substrate Processing Apparatus] Next, an example of the configuration of a substrate processing apparatus according to a second embodiment will be described with reference to Figs. 3 and 4. Fig. 3 is a schematic cross-sectional view of the substrate processing apparatus according to the second embodiment. Fig. 4 is an enlarged view of a portion of the substrate processing apparatus according to the second embodiment. Specifically, Fig. 4 is an enlarged view of the area within the dotted line frame E in the substrate processing apparatus 10A of Fig. 3.

[0032] In the substrate processing apparatus 10A according to the second embodiment, the positions of the radical supply port 30a and the radical supply unit 31a are different from the positions of the radical supply port 30 and the radical supply unit 31 of the substrate processing apparatus 10 according to the first embodiment. Therefore, in this embodiment, the configurations of the radical supply port 30a and the radical supply unit 31a will be described, and descriptions of other configurations will be omitted.

[0033] The processing vessel 1 has a radical supply port 30a. The radical supply port 30a is provided at one location on the bottom 1c. The radical supply port 30a is located in a vertical direction relative to the outer peripheral edge Wa of the substrate W placed on the substrate placement surface 11a. The radical supply unit 31a is connected to a location directly below the radical supply port 30a via a radical supply pipe 32a. This allows the radical supply port 30a to supply radicals in plasma generated from the etching gas by the radical supply unit 31a directly to one location on the outer periphery of the substrate W from directly below. The radical supply unit 31a uses, for example, O as the etching gas. ２ However, the etching gas is not limited to this, and ClF ３ The radical supplier 31 may be a remote plasma source.

[0034] The stage 11 rotates the substrate W about the central axis of the stage while the radical supplier 31a irradiates the substrate W with radicals of the etching gas from the radical supply port 30a. As the stage 11 rotates, radicals of the etching gas are supplied to the entire periphery of the substrate W. This causes the entire periphery of the substrate W to be etched while the entire periphery is locally heated by the heat of the radicals. In other words, the periphery of the substrate W is cleaned while the central portion of the substrate W is not heated. The periphery of the substrate W protrudes from the side surface 11b of the stage 11, and the front and back surfaces of the periphery of the substrate W are exposed to the outside of the stage 11. Therefore, by irradiating the substrate W with radicals of the etching gas from the radical supply port 30a, the radical supplier 31a can clean the periphery of the substrate W without lifting the substrate W from the stage 11 using a pin or the like.

[0035] The radical supply port 30a penetrates the bottom 1c at a position vertical to the outer circumferential edge of the substrate W so that the outer circumferential edge of the substrate W overlaps with the radical supply port 30a when viewed from above the processing vessel 1. The radical supply port 30a penetrates the bottom 1c at one location. However, the radical supply port 30a may penetrate the bottom 1c at two or more locations.

[0036] The radical supply port 30a is located more inward than the shower head 20 with respect to the central axis Ax of the processing chamber 1. The radical supply port 30a is located more outward than the stage 11 with respect to the central axis Ax of the processing chamber 1.

[0037] The length a of the substrate W in the radial direction from the outer peripheral edge Wa of the substrate W to the side surface 11b of the stage 11 is, for example, 50 mm. However, the length a is not limited to this and may be, for example, within a range of 10 mm to 100 mm.

[0038] The width (height) b of the gap 60 between the shower head 20 and the substrate mounting surface 11a of the stage 11 is, for example, 1 mm. However, the width b is not limited to this and may be, for example, within a range of 0.5 mm to 2 mm.

[0039] The length c in the direction parallel to the radial direction of the substrate W from the outer peripheral end Wa of the substrate W to the side surface 20c of the shower head 20 is, for example, 5 mm. However, the length c is not limited to this and may be, for example, a length in the range of 0 mm to 10 mm. The outer peripheral end Wa of the substrate W is located radially inward from the side surface 20c of the shower head 20. The length c illustrated in FIG. 4 has an opposite sign to the length c illustrated in FIG. 2. In other words, when the length c illustrated in FIG. 2 is a negative value, the length c illustrated in FIG. 4 is a positive value.

[0040] Etching gas radicals are supplied vertically from the radical supply port 30a to the outer periphery of the substrate W. At this time, the substrate W rotates around the central axis Ax due to the rotation of the stage 11, and the radicals are supplied to the entire outer periphery of the rotating substrate W. This allows the entire outer periphery of the substrate W to be cleaned even if the etching gas radicals are supplied to one point on the outer periphery of the substrate W. Furthermore, the Ar gas supplied to the gap 60 prevents the radicals from circulating into the gap 60. Since the stage 11 is not heated at this time, the central portion of the substrate W is not heated. Therefore, only the outer periphery of the substrate W is selectively heated by the heat from the radicals. This allows the substrate processing apparatus 10A to remove a film adhering to the outer periphery and clean the outer periphery of the substrate W while reducing thermal damage to the central portion of the substrate W. Furthermore, the substrate processing apparatus 10A can increase the etching rate of the outer periphery of the substrate W by locally heating the outer periphery of the substrate W with the radicals. In particular, by irradiating the outer peripheral edge of the substrate W with radicals from below, the range of the width b of the gap 60 can be increased.

[0041] The substrate processing apparatus 10A may have both the radical supply port 30a and the radical supply unit 31a, and the radical supply port 30 and the radical supply unit 31.

[0042] [Substrate Processing Method] Next, a substrate processing method according to an embodiment will be described with reference to FIG. 5. FIG. 5 is a flowchart showing an example of the substrate processing method according to an embodiment. The substrate processing method according to an embodiment can be performed by the substrate processing apparatus 10 or the substrate processing apparatus 10A. Each unit of the substrate processing apparatus 10 or the substrate processing apparatus 10A may be controlled by a control unit 2. The following describes an example of cleaning the outer periphery of a substrate W on which a film such as a polymer organic film has been formed.

[0043] <ST1: Providing a Substrate> First, in step ST1, the control unit 2 performs a process of providing a substrate W on the substrate mounting surface 11 a. For example, the control unit 2 opens the gate valve GV, loads the substrate W into the processing vessel 1 through the load / unload port 12, and holds it on the substrate mounting surface 11 a. Step ST1 is an example of process (A).

[0044] <ST2: Rotation of Substrate> Next, in step ST2, the control unit 2 performs a process of rotating the substrate W on the substrate mounting surface 11 a. For example, the control unit 2 causes the actuator 14 to generate a driving force that rotates the stage 11, and rotates the substrate W while it is held on the substrate mounting surface 11 a. Step ST2 is an example of process (B).

[0045] <ST3: Supply of Inert Gas> Next, in step ST3, the control unit 2 carries out a step of supplying an inert gas. For example, the control unit 2 causes the gas supply unit 21 to supply an inert gas. The control unit 2 then controls the inert gas to be supplied from the plurality of gas holes 20a of the shower head 20 to the gap 60, thereby preventing radicals from reaching the center of the substrate W. The control unit 2 supplies, for example, Ar gas as the inert gas. Note that step ST3 is an example of step (C).

[0046] <ST4: Cleaning of Outer Periphery by Radiation of Radicals> Next, in step ST4, the control unit 2 performs a process of irradiating radicals to clean the outer periphery of the substrate W. For example, the control unit 2 irradiates radicals of an etching gas from at least one of the radical supply port 30 and the radical supply port 30a. This etches the organic film on the outer periphery of the rotating substrate W, and the organic film is removed. As a result, the outer periphery of the substrate W is cleaned. The control unit 2 irradiates radicals of the etching gas, for example, O ２ Radicals in the plasma generated from the gas are supplied. Step ST4 is an example of the process (D).

[0047] Although the example in which the control unit 2 performs the processes of steps ST1 to ST4 in this order has been described above, the order in which the processes of steps ST2 to ST4 are performed does not matter. After performing the process of step ST1, the control unit 2 may perform steps ST2 to ST4 in any order, or may perform them simultaneously.

[0048] [Effect] (Reduction of thermal effects on the central portion of the substrate) In the past, when cleaning the peripheral portion of a substrate, the substrate was sometimes heated by a heating mechanism built into the stage before etching. For example, the stage may be heated to 100°C or higher to etch an organic film attached to the peripheral portion of the substrate. This heats not only the peripheral portion of the substrate but also the central portion. Therefore, in addition to etching the peripheral portion, the central portion of the substrate may also be etched due to the thermal effects. Furthermore, organic films have issues with heat resistance, and heating of a substrate W on which an organic film has been formed must be limited to 200°C or less, which limits the process window.

[0049] In contrast, the substrate processing apparatuses 10 and 10A do not heat the stage 11. The substrate W is heated by the heat of radicals from the etching gas supplied to one or a portion of the outer periphery of the substrate W. Furthermore, as the substrate W rotates due to the rotation of the stage 11, radicals are supplied to the entire outer periphery of the substrate W, and the entire outer periphery of the substrate W is selectively heated by the heat of the radicals. In other words, the center of the substrate W is not heated. This allows the substrate processing apparatuses 10 and 10A to selectively etch the outer periphery of the substrate W by the heat of the radicals while reducing the thermal effect on the central portion of the substrate W, thereby reducing the etching of the film in the central portion. In this way, the substrate processing apparatuses 10 and 10A can clean the outer periphery of the substrate W while reducing the thermal effect on the central portion of the substrate W. As a result, the substrate processing apparatuses 10 and 10A can protect devices on the substrate W by suppressing a temperature increase in the device area in the center of the substrate W. Cleaning the outer periphery of the substrate W can reduce contamination due to deposits on the outer periphery in the next process.

[0050] (Uniformity of Etching) When cleaning the outer periphery of the substrate, the amount of radicals supplied to each position on the outer periphery of the substrate may be controlled by changing the radical supply path using a radical diffusion plate. Therefore, the amount of radicals supplied to the entire periphery of the substrate may not be uniform, and the entire periphery of the substrate may not be etched uniformly.

[0051] In contrast, in the substrate processing apparatus 10, 10A, radicals are supplied to one location or a portion of the outer periphery of the substrate W. Furthermore, by rotating the substrate W in accordance with the rotation of the stage 11, radicals are supplied evenly all around the outer periphery of the substrate W. This allows the substrate processing apparatus 10, 10A to evenly etch the entire outer periphery of the substrate W. In other words, the substrate processing apparatus 10, 10A can achieve uniformity in the etching rate in the circumferential direction of the substrate W.

[0052] (Reduction of radical deactivation) When cleaning the outer periphery of a substrate, if a radical diffusion plate is used to change the radical supply path, the radical supply path may become longer, which may result in the generated radicals being deactivated while being diffused, resulting in a decrease in the etching rate.

[0053] In contrast, in the substrate processing apparatus 10, 10A, the radical supply unit 31, 31a is disposed near the radical supply port 30, 30a, and radicals are supplied to one location or part of the outer periphery of the substrate W. This allows the substrate processing apparatus 10, 10A to shorten the radical supply path, thereby reducing radical deactivation and preventing a decrease in etching rate.

[0054] (Increase in Etching Rate) Furthermore, when cleaning the outer periphery of the substrate, the substrate temperature may drop because the substrate is lifted from the stage by the pins.

[0055] In contrast, the diameter of the stage 11 of the substrate processing apparatus 10, 10A is smaller than the diameter of the substrate W. As a result, the outer periphery of the substrate W is exposed outside the side surface 11b of the stage 11. Therefore, the substrate processing apparatus 10, 10A can clean the outer periphery of the substrate W without lifting the substrate W from the stage 11. This allows the substrate processing apparatus 10, 10A to prevent a decrease in the temperature of the substrate W. Therefore, the substrate processing apparatus 10, 10A can increase the etching rate of the outer periphery of the substrate W. As a result, the substrate processing apparatus 10, 10A can shorten the cleaning time of the outer periphery of the substrate W.

[0056] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0057] The following supplementary notes are further disclosed with respect to the above-described embodiments. (Supplementary Note 1) A substrate processing apparatus comprising: a stage having a substrate support surface for supporting a substrate having a film formed thereon, the stage being configured to rotate the substrate on the substrate support surface; a processing vessel having a radical supply port positioned vertically relative to an outer circumferential edge of the substrate; and a radical supply unit configured to clean the outer circumferential edge of the rotating substrate by irradiating radicals of an etching gas from the radical supply port. (Supplementary Note 2) The substrate processing apparatus according to Supplementary Note 1, further comprising: a showerhead having a plurality of gas holes facing the stage, the showerhead configured to supply an inert gas from the plurality of gas holes to prevent the radicals from reaching the center of the substrate. (Supplementary Note 3) The substrate processing apparatus according to Supplementary Note 2, wherein the radical supply port is positioned outward of the showerhead with respect to a central axis of the processing vessel. (Supplementary Note 4) The substrate processing apparatus according to any one of Supplements 1 to 3, wherein a diameter of the substrate support surface is smaller than a diameter of the substrate, and the outer circumferential edge of the substrate protrudes from the stage. (Supplementary Note 5) The substrate processing apparatus according to any one of Supplements 1 to 4, wherein the radical supply port is located outer than the stage with respect to a central axis of the processing vessel. (Supplementary Note 6) The substrate processing apparatus according to any one of Supplements 1 to 5, wherein the processing vessel has a lid and a bottom, and the radical supply port penetrates at least one of the lid or the bottom at a vertical position of an outer circumferential edge of the substrate. (Supplementary Note 7) The substrate processing apparatus according to Supplementary Note 6, wherein the radical supply port penetrates the lid or the bottom at one location. (Supplementary Note 8) The substrate processing apparatus according to any one of Supplements 1 to 7, wherein the stage is configured to rotate the substrate about a central axis of the stage while the radical supply unit irradiates the substrate with the radicals from the radical supply port. (Supplementary Note 9) The substrate processing apparatus according to any one of Supplements 1 to 8, wherein the radical supply unit is configured to selectively heat an outer circumferential portion of the substrate by heat of the radicals.(Supplementary Note 10) A substrate processing method carried out in a substrate processing apparatus comprising: a stage having a substrate support surface that supports a substrate having a film formed thereon, and configured to rotate the substrate on the substrate support surface; a processing vessel having a radical supply port located vertically relative to an outer peripheral edge of the substrate; a radical supply unit configured to irradiate radicals of an etching gas; and a shower head having a plurality of gas holes located opposite the stage and configured to supply an inert gas from the plurality of gas holes, the substrate processing method comprising: (A) providing a substrate on the substrate support surface; (B) rotating the substrate on the substrate support surface; (C) supplying the inert gas from the plurality of gas holes to prevent the radicals from moving around to a center of the substrate; and (D) cleaning the outer peripheral edge of the rotating substrate by irradiating radicals of the etching gas from the radical supply port.

[0058] REFERENCE SIGNS 1: Processing vessel 1a: Lid 1b: Side 1c: Bottom 2: Control unit 10, 10A: Substrate processing apparatus 11: Stage 11a: Substrate placement surface 20: Shower head 30: Radical supply port 31: Radical supply unit 40: Exhaust system W: Substrate

Claims

1. A substrate processing apparatus comprising: a stage having a substrate support surface for supporting a substrate having a film formed thereon, the stage being configured to rotate the substrate on the substrate support surface; a processing vessel having a radical supply port positioned vertically relative to the outer circumferential edge of the substrate; and a radical supply unit configured to clean the outer circumferential edge of the rotating substrate by irradiating radicals of an etching gas from the radical supply port.

2. The substrate processing apparatus according to claim 1, further comprising a shower head having a plurality of gas holes at a position opposite the stage, and configured to supply an inert gas from the plurality of gas holes to prevent the radicals from reaching the center of the substrate.

3. The substrate processing apparatus according to claim 2, wherein the radical supply port is located outside the shower head with respect to the central axis of the processing vessel.

4. The substrate processing apparatus according to claim 1, wherein the diameter of the substrate support surface is smaller than the diameter of the substrate, and the outer periphery of the substrate protrudes from the stage.

5. The substrate processing apparatus according to claim 1, wherein the radical supply port is located outside the stage with respect to the central axis of the processing vessel.

6. The substrate processing apparatus according to any one of claims 1 to 4, wherein the processing vessel has a lid and a bottom, and the radical supply port penetrates at least one of the lid and the bottom at a vertical position on the outer circumferential edge of the substrate.

7. The substrate processing apparatus according to claim 6, wherein the radical supply port penetrates the lid or the bottom at one location.

8. The substrate processing apparatus according to any one of claims 1 to 4, wherein the stage is configured to rotate the substrate around a central axis of the stage while the radical supply unit irradiates the substrate with the radicals from the radical supply port.

9. The substrate processing apparatus according to any one of claims 1 to 4, wherein the radical supply section is configured to selectively heat the outer periphery of the substrate by the heat of the radicals.

10. A substrate processing method carried out in a substrate processing apparatus comprising: a stage having a substrate support surface for supporting a substrate having a film formed thereon, and configured to rotate the substrate on the substrate support surface; a processing vessel having a radical supply port positioned vertically relative to the outer circumferential edge of the substrate; a radical supply unit configured to irradiate radicals of an etching gas; and a shower head having a plurality of gas holes positioned opposite the stage and configured to supply an inert gas from the plurality of gas holes, the substrate processing method comprising: (A) providing a substrate on the substrate support surface; (B) rotating the substrate on the substrate support surface; (C) supplying the inert gas from the plurality of gas holes to prevent the radicals from reaching the center of the substrate; and (D) cleaning the outer circumferential edge of the rotating substrate by irradiating radicals of the etching gas from the radical supply port.

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