Through electrode substrate, through electrode substrate with element, semiconductor device, and substrate for through electrode

Abstract

This through electrode substrate comprises: a glass substrate (2) having a first surface (2a), a second surface (2b) facing the first surface (2a), and a through hole; a through electrode (3) disposed in the through hole of the glass substrate (2); and a first wiring laminate (4A) disposed on the first surface (2a) side of the glass substrate (2) and having one or more first insulating layers (4) and one or more first conductive layers (5) electrically connected to the through electrode (3).　In the first wiring laminate (4A), where the Young's modulus of the ith (i = 1 to m) first insulating layer (4) from the glass substrate (2) side is Ei (MPa), the difference between the thermal expansion coefficient of the ith first insulating layer (4) and the thermal expansion coefficient of the glass substrate (2) is Δαi ( / °C), the temperature change during the formation of the ith first insulating layer (4) is ΔTi (°C), and the thickness of the ith first insulating layer (4) is hi (mm), the stress F1 calculated by the following formula (1) is 13.4 MPa or less, and the Young's modulus of the first insulating layer (4) is 0.10 GPa or more.

Description

Through-electrode substrate, through-electrode substrate with element, semiconductor device, and substrate for through-electrode

[0001] The present disclosure relates to a through electrode substrate, a semiconductor device, and a substrate for a through electrode.

[0002] Through electrode substrates, which have a substrate with through holes and through electrodes arranged in the through holes, are widely used as interposers that connect chips and motherboards with different terminal pitches (see Patent Document 1).

[0003] Known insulating substrates that constitute wiring boards include glass epoxy substrates, resin substrates containing epoxy resin or acrylic resin, etc. Among these, glass substrates have excellent optical properties such as flatness, dimensional stability, heat resistance, insulating properties, and transparency, and therefore, development of wiring boards using glass substrates is progressing.

[0004] In recent years, components including an insulating substrate having a plurality of through holes and through electrodes provided inside the through holes, so-called through electrode substrates, have been used in a variety of applications. For the reasons mentioned above, a glass substrate is sometimes used as the insulating substrate constituting the through electrode substrate. Such glass substrates having through holes are called TGVs (Through-Glass Vias).

[0005] International Publication No. WO 2020 / 163067 International Publication No. WO 2019 / 065656

[0006] In the manufacture of a semiconductor device in which a through hole electrode substrate is interposed between an element and a motherboard, reflow soldering is performed when mounting the element on the through hole electrode substrate or when connecting the through hole electrode substrate to the motherboard. When heating is performed during the manufacturing process of the semiconductor device, such as reflow soldering, thermal stress is applied to the through hole electrode substrate. Thermal stress is also applied to the through hole electrode substrate when the semiconductor device is used in a high-temperature environment. As a result, stress is concentrated near the opening of the through hole in the substrate, which may cause damage such as cracks in the substrate.

[0007] The present disclosure has been made in consideration of the above-described circumstances, and has a first object to provide a through electrode substrate, a semiconductor device, and a substrate for through electrodes that can suppress damage such as cracks from occurring in the substrate.

[0008] The through-hole electrode substrate has a plurality of insulating layers and a plurality of conductive layers on an insulating substrate. The insulating layer is made of a photosensitive resin or a thermosetting resin. In the case of a photosensitive resin, the insulating layer is formed, for example, by exposing a film containing the photosensitive resin to light, developing it, and curing it. The curing process involves heating. In the case of a thermosetting resin, the insulating layer is formed, for example, by forming a patterned film containing the thermosetting resin and then thermally curing it, or by thermally curing a film containing the thermosetting resin and then forming openings using a laser or the like.

[0009] The thermal expansion coefficient of glass is significantly different from that of the resin used in the insulating layer. Therefore, as the temperature changes during curing in the insulating layer formation process, stress is generated at the interface between the glass substrate and the insulating layer due to the difference between the thermal expansion coefficients of the glass and the resin. At this time, the thermal expansion coefficient of the resin is greater than that of the glass, so tensile stress acts on the edge surface of the glass substrate. Because glass is weak against tensile stress, if there is a crack on the edge surface of the glass substrate, the crack will be the starting point and the glass substrate will break from the edge surface.

[0010] Furthermore, the manufacture of a through-hole electrode substrate involves the use of a large insulating substrate and the use of multiple mountings. In this case, the multiple mounted through-hole electrode substrate is cut into individual pieces. At this time, cracks may occur on the cut surface of the glass substrate in the through-hole electrode substrate. If a crack occurs on the cut surface of the glass substrate, as described above, the glass substrate will break from the cut surface, starting from the crack.

[0011] The present disclosure is an invention made in view of the above circumstances, and has a second object to provide a through electrode substrate that can suppress cracking of a glass substrate.

[0012] One embodiment of the present disclosure provides a through-electrode substrate comprising: a substrate having a first surface and a second surface opposite the first surface, the substrate having a first through-hole; and a through-electrode arranged in the first through-hole, the first through-hole having a first opening located on the first surface side and a second opening located on the second surface side, and an end of the first opening and an end of the second opening having a curved surface.

[0013] Another embodiment of the present disclosure provides a semiconductor device having the through-hole electrode substrate described above and an element mounted on the through-hole electrode substrate.

[0014] Another embodiment of the present disclosure provides a substrate for a through electrode, comprising a substrate having a first surface and a second surface opposite the first surface, the substrate having a through hole, the through hole having a first opening located on the first surface side and a second opening located on the second surface side, and an end of the first opening and an end of the second opening having a curved surface.

[0015] Another embodiment of the present disclosure is a through electrode substrate including: a glass substrate having a first surface and a second surface opposite to the first surface and having a through hole; a through electrode disposed in the through hole of the glass substrate; and a first wiring laminate disposed on the first surface side of the glass substrate and having one or more first insulating layers and one or more first conductive layers electrically connected to the through electrode, wherein in the first wiring laminate, a Young's modulus of the ith first insulating layer from the glass substrate side (i=1 to m, m is the number of the first insulating layers included in the first wiring laminate) is defined as E ｉ (MPa), and the difference between the thermal expansion coefficient of the i-th first insulating layer and the thermal expansion coefficient of the glass substrate is Δα ｉ ( / °C), and the temperature change during the formation of the i-th first insulating layer is ΔT ｉ (°C), the thickness of the i-th first insulating layer is h ｉ (mm), the stress F1 calculated by the following formula (1) is 13.4 MPa or less, and the Young's modulus of the first insulating layer is 0.10 GPa or more.

[0016]

[0017] Another embodiment of the present disclosure provides a through electrode substrate comprising: a glass substrate having a first surface and a second surface opposite the first surface, the glass substrate having a through hole; and a through electrode arranged in the through hole of the glass substrate, wherein the glass substrate has a first cutting groove arranged on the first surface and a second cutting groove arranged on the second surface, and the corners of the opening of the first cutting groove are rounded, and the corners of the opening of the second cutting groove are rounded.

[0018] Another embodiment of the present disclosure provides a through-electrode substrate, comprising: a glass substrate having a first surface and a second surface opposite to the first surface, the glass substrate having a through-hole; and a through-electrode disposed in the through-hole of the glass substrate, wherein an end of the glass substrate has a chamfered portion, and the chamfered portion has a curved surface.

[0019] Another embodiment of the present disclosure provides a through hole electrode substrate with an element, including the through hole electrode substrate described above and an element mounted on the first wiring stack in the through hole electrode substrate.

[0020] Another embodiment of the present disclosure provides a semiconductor device having the above-mentioned element-equipped through-hole electrode substrate, a joint portion electrically connected to the second wiring stack in the through-hole electrode substrate, and a wiring substrate electrically connected to the joint portion.

[0021] An embodiment of the present disclosure has an effect of suppressing damage such as cracks from occurring in the substrate.

[0022] Another embodiment of the present disclosure has an effect of suppressing cracking of the glass substrate.

[0023] 1 is a schematic cross-sectional view illustrating a through electrode substrate according to the present disclosure. FIG. 1 is a schematic cross-sectional view illustrating a through electrode substrate according to the present disclosure. FIG. 1 is a schematic cross-sectional view illustrating a substrate in a through electrode substrate according to the present disclosure. FIG. 1 is a schematic cross-sectional view illustrating a through electrode substrate according to the present disclosure. FIG. 1 is a schematic cross-sectional view illustrating gaps and bulges that occur in a through electrode substrate. FIG. 1 is a schematic cross-sectional view illustrating a through electrode substrate according to the present disclosure. FIG. 1 is a schematic cross-sectional view illustrating a through electrode substrate according to the present disclosure. FIG. 1 is a schematic cross-sectional view illustrating a multi-sided mounting body of a through electrode substrate according to the present disclosure. FIG. 1 is a schematic cross-sectional view illustrating gaps and bulges that occur in a through electrode substrate. FIG. 1 is a schematic cross-sectional view illustrating a through electrode substrate according to the present disclosure. FIG. 1 is a schematic cross-sectional view illustrating a multi-sided mounting body of a through electrode substrate according to the present disclosure. FIG. 1 is a schematic cross-sectional view illustrating a glass substrate constituting a multi-sided mounting body of a through electrode substrate according to the present disclosure. FIG. 1 is a schematic cross-sectional view illustrating a through electrode substrate according to the present disclosure. FIG. 1 is a schematic cross-sectional view illustrating a through electrode substrate according to the present disclosure. FIG. 1 is a schematic cross-sectional view illustrating a through hole in a glass substrate of a through electrode substrate according to the present disclosure. FIG. 1 is a process diagram illustrating cutting of a multi-sided assembly of a through electrode substrate according to the present disclosure. FIG. 2 is a process diagram illustrating cutting of a multi-sided assembly of a through electrode substrate according to the present disclosure. FIG. 3 is a schematic cross-sectional view illustrating a through electrode substrate according to the present disclosure. FIG. 4 is a schematic cross-sectional view illustrating a through electrode substrate with elements according to the present disclosure. FIG. 5 is a schematic cross-sectional view illustrating a semiconductor device according to the present disclosure. FIG. 6 is a schematic cross-sectional view illustrating a semiconductor device according to the present disclosure. FIG. 7 is a schematic cross-sectional view illustrating a semiconductor device according to the present disclosure. FIG. 8 is a schematic cross-sectional view illustrating a through electrode substrate according to the present disclosure. FIG. 9 is a schematic cross-sectional view illustrating a model of a through electrode substrate. FIG. 10 is a graph showing simulation results.

[0024] Embodiments of the present disclosure will be described below with reference to the drawings and the like. However, the present disclosure can be implemented in many different forms and should not be construed as being limited to the description of the embodiments exemplified below. Furthermore, to clarify the explanation, the drawings may show the width, thickness, shape, etc. of each part schematically compared to the actual form, but these are merely examples and do not limit the interpretation of the present disclosure. Furthermore, in this specification and each drawing, elements similar to those described above with reference to the previous drawings may be designated by the same reference numerals, and detailed descriptions may be omitted as appropriate.

[0025] In this specification, when describing an aspect in which another component is placed on a certain component, the term "above" or "below" refers to both a case in which another component is placed directly above or below the component so as to be in contact with the component, and a case in which another component is placed above or below the component with another component interposed therebetween, unless otherwise specified. Also, in this specification, when describing an aspect in which another component is placed on the surface of a certain component, the term "on the surface side" or "on the surface" refers to both a case in which another component is placed directly above or below the component so as to be in contact with the component, and a case in which another component is placed above or below the component with another component interposed therebetween, unless otherwise specified.

[0026] Hereinafter, the through electrode substrate, the through electrode substrate with elements, the semiconductor device, the multi-faceted assembly of the through electrode substrate, the substrate for through electrodes, and the glass substrate according to the present disclosure will be described in detail.

[0027] A. Through-hole electrode substrate The through-hole electrode substrate according to the present disclosure has seven embodiments, which will be described below separately.

[0028] I. First Embodiment of Through Electrode Substrate A first embodiment of a through electrode substrate in the present disclosure achieves the first object described above.

[0029] The through electrode substrate in this embodiment has a first surface and a second surface opposite to the first surface, and comprises a substrate having a first through hole, and a through electrode arranged in the first through hole, wherein the first through hole has a first opening located on the first surface side and a second opening located on the second surface side, and the end of the first opening and the end of the second opening have curved surfaces.

[0030] 1 is a schematic cross-sectional view showing an example of a through electrode substrate according to this embodiment. As shown in FIG. 1, the through electrode substrate 1 includes a substrate 2A having a first surface 2a and a second surface 2b opposite the first surface 2a, and a first through hole 2h, and a through electrode 3 disposed in the first through hole 2h. The first through hole 2h has a first opening located on the first surface 2a side and a second opening located on the second surface 2b side, and an end E1 of the first opening and an end E2 of the second opening each have a curved surface.

[0031] When heating is performed during the manufacturing process of a semiconductor device or when the semiconductor device is used in a high-temperature environment, thermal stress is applied to the through-hole electrode substrate, and stress tends to concentrate near the opening of the through-hole in the substrate. In this embodiment, the end E1 of the first opening and the end E2 of the second opening in the first through hole 2h each have a curved surface, thereby alleviating stress concentration. Therefore, damage such as cracks in the substrate 2A can be suppressed at the end E1 of the first opening and the end E2 of the second opening of the first through hole 2h.

[0032] Therefore, for example, as shown in Figure 2, when conductive layers 5 and 15 electrically connected to the through electrode 3 are arranged on the first surface 2a and the second surface 2b of the substrate 2A, respectively, cracking, peeling, and disconnection can be suppressed in the conductive layer 5 located on the end E1 of the first opening of the first through hole 2h and the conductive layer 15 located on the end E2 of the second opening of the first through hole 2h.

[0033] Furthermore, for example, as shown in Figure 3, when conductive layers 5 and 15 electrically connected to insulating layers 6 and 7 and through electrodes 3 are arranged on the first surface 2a and second surface 2b of substrate 2A, respectively, cracking, peeling, and disconnection can be suppressed in conductive layer 5 located on end E1 of the first opening of first through hole 2h and conductive layer 15 located on end E2 of the second opening of first through hole 2h.

[0034] Therefore, in this embodiment, the connection reliability and durability can be improved.

[0035] Hereinafter, the through electrode substrate in this embodiment will be described for each configuration.

[0036] 1. Substrate In this embodiment, the substrate has a first surface and a second surface opposite to the first surface, and a first through hole penetrating the substrate in a thickness direction. The first through hole has a first opening located on the first surface side and a second opening located on the second surface side, and both ends of the first opening and the second opening have curved surfaces.

[0037] The substrate is not particularly limited as long as it is an insulating substrate, and both inorganic and organic materials can be used. Examples include glass substrates, silicon substrates, silicon carbide substrates, sapphire substrates, alumina substrates, aluminum nitride substrates, zirconia substrates, and resin substrates. A glass epoxy substrate may also be used as the substrate.

[0038] Among these, glass substrates are preferred. Because of their excellent flatness, fine wiring can be formed at a narrow pitch. Furthermore, since the thermal expansion coefficient of glass substrates varies depending on their composition, a glass substrate with a suitable thermal expansion coefficient can be selected to match other components. Furthermore, as described below, metals or alloys are used for the through electrodes, but the thermal expansion coefficient of the glass substrate is generally smaller than that of the through electrodes. When heating is performed during the semiconductor device manufacturing process or when the semiconductor device is used in a high-temperature environment, the through electrode substrate expands due to heat and then contracts upon cooling. In this case, if the thermal expansion coefficient of the glass substrate is smaller than that of the through electrodes, tensile stress tends to act near the first through holes in the glass substrate and compressive stress tends to act on the through electrodes. Generally, glass substrates are resistant to compressive stress but weak to tensile stress. Therefore, there is a concern that tensile stress may concentrate near the first and second openings of the first through holes in the glass substrate, which may cause damage such as cracking of the glass substrate at the ends of the first and second openings of the first through holes in the glass substrate. In contrast, in this embodiment, as described above, the end of the first opening and the end of the second opening of the first through hole in the glass substrate each have a curved surface, which can alleviate stress concentration, and therefore this embodiment is useful in the case of a glass substrate.

[0039] Examples of glass used for the glass substrate include alkali-free glass and quartz.

[0040] The thermal expansion coefficient of the substrate is preferably smaller than that of the through electrode. As described above, when the thermal expansion coefficient of the substrate is smaller than that of the through electrode, tensile stress tends to act near the first through hole of the substrate, and compressive stress tends to act on the through electrode. Furthermore, substrates made of inorganic or organic materials tend to be resistant to compressive stress but weak to tensile stress. Therefore, there is a concern that tensile stress may concentrate near the first and second openings of the first through hole in the substrate, which may cause damage such as cracking of the substrate at the ends of the first and second openings of the first through hole in the substrate. In contrast, in this embodiment, as described above, the ends of the first and second openings of the first through hole in the substrate each have curved surfaces, thereby mitigating stress concentration. Therefore, this embodiment is useful when the thermal expansion coefficient of the substrate is smaller than that of the through electrode.

[0041] The thermal expansion coefficient of the substrate is, for example, 0.5 ppm / °C or more and 10 ppm / °C or less, and may be 2 ppm / °C or more and 5 ppm / °C or less. The thermal expansion coefficient is a linear expansion coefficient. The thermal expansion coefficient is measured by thermomechanical analysis (TMA) in accordance with JIS R3102:1995. The thermal expansion coefficient of the substrate is an average linear expansion coefficient from 0°C to 300°C.

[0042] The shape of the substrate in plan view is not particularly limited, and examples thereof include rectangular shapes such as a rectangle or a square, and circular shapes.

[0043] The shape of the first through hole in the substrate in plan view is not particularly limited, and examples thereof include a circle and an ellipse.

[0044] The cross-sectional shape of the first through hole 2h of the substrate 2A can be, for example, a straight shape as shown in Fig. 1, a forward tapered shape in which the opening diameter on the first surface 2a side is smaller than the opening diameter on the second surface 2b side as shown in Fig. 4(a), a reverse tapered shape in which the opening diameter on the first surface 2a side is larger than the opening diameter on the second surface 2b side as shown in Fig. 4(b), an hourglass shape including a portion where the diameter is minimum at a predetermined position between the first surface 2a and the second surface 2b as shown in Fig. 4(c), and a bowing shape in which the diameter is maximum at a predetermined position between the first surface 2a and the second surface 2b as shown in Fig. 4(d). Figs. 4(a) to 4(d) are schematic cross-sectional views illustrating examples of the cross-sectional shapes of the first through hole of the substrate.

[0045] For example, as shown in FIG. 4A , the smaller the angle θ1 of the end E1 of the first opening of the first through hole 2h and the angle θ2 of the end E2 of the second opening of the first through hole 2h, the more likely stress is concentrated at the end E1 of the first opening and the end E2 of the second opening of the first through hole 2h. Therefore, this embodiment is useful when the cross-sectional shape of the first through hole 2h is a shape in which at least one of the angles θ1 and θ2 is small, specifically, a shape in which at least one of the angles θ1 and θ2 is 90° or less. Examples of such cross-sectional shapes of the first through hole include a straight shape, a forward tapered shape, a reverse tapered shape, and a bowed shape. Among these, the straight shape and the bowed shape are useful because they are shapes in which both the angles θ1 and θ2 are 90° or less.

[0046] In this embodiment, in the substrate, the end of the first opening and the end of the second opening of the first through hole each have a curved surface. In particular, it is preferable that the end of the first opening and the end of the second opening of the first through hole each be configured with a curved surface. That is, in a cross-sectional view of the substrate in the thickness direction, it is preferable that the end of the first opening and the end of the second opening of the first through hole each be configured with a curved line. This can further reduce stress concentration.

[0047] The fact that the end of the first opening and the end of the second opening of the first through-hole each have a curved surface is confirmed by observing a cross section of the through-hole electrode substrate in the thickness direction using a scanning electron microscope (SEM).

[0048] The radius of curvature of the curved surface at the end of the first opening of the first through hole is not particularly limited, and is preferably 0.5 μm or more, or may be 1 μm or more, or may be 2 μm or more, for example. If the radius of curvature is too small, the effect of alleviating stress concentration may not be sufficiently obtained.

[0049] On the other hand, the upper limit of the radius of curvature of the curved surface at the end of the first opening of the first through hole is appropriately selected depending on the pitch of the first through holes, etc. When the radius of curvature of the curved surface is R (μm), the pitch of the first through holes is H (μm), and the diameter of the first through holes is φ (μm), it is preferable that the radius of curvature R satisfies the following formula: 2R<H-φ. For example, as shown in FIGS. 5(a) and 5(b), the through electrode 3 is disposed within the first through hole 2h so that the surface on the first surface 2a side of the through electrode 3 is substantially flush with the first surface 2a of the substrate 2A, and the surface on the second surface 2b side of the through electrode 3 is substantially flush with the second surface 2b of the substrate 2A. Note that "substantially flush" includes a state in which there is a slight step. Because the end E1 of the first opening of the first through hole 2h has a curved surface, the diameters d1 and d2 of the through electrode 3 gradually increase toward the first surface 2a near the first surface 2a. Similarly, because the end E2 of the second opening of the first through hole 2h has a curved surface, the diameters d1 and d3 of the through electrodes 3 gradually increase toward the second surface 2b near the second surface 2b. As shown in FIG. 5( a), when the radius of curvature r1 of the curved surface at the end E1 of the first opening of the first through hole 2h is relatively small, the diameter d2 of the through electrodes 3 on the first surface 2a side is also relatively small. Therefore, even when the pitch of the first through holes 2h is relatively narrow, contact between adjacent through electrodes 3c can be prevented. On the other hand, as shown in FIG. 5( b), when the radius of curvature r1 of the curved surface at the end E1 of the first opening of the first through hole 2h is relatively large, the diameter d2 of the through electrodes 3 on the first surface 2a side is also relatively large. Therefore, when the pitch of the first through holes 2h is relatively narrow, there is a risk of contact between adjacent through electrodes 3c. Furthermore, if the diameter d2 of the through electrode 3 on the first surface 2a side is relatively large, the thickness of the through electrode 3 gradually decreases near the first surface 2a and the second surface 2b, which may make the through electrode 3 more likely to peel off. Therefore, the radius of curvature is preferably within the above range. The radius of curvature is, for example, 50 μm or less, or may be 5 μm or less, or may be 1 μm or less. That is, the radius of curvature may be, for example, 0.5 μm or more and 50 μm or less, or may be 1 μm or more and 5 μm or less.

[0050] The radius of curvature of the curved surface at the end of the second opening of the first through hole is the same as the radius of curvature of the curved surface at the end of the first opening of the first through hole described above.

[0051] The radius of curvature of the curved surface is measured from an SEM image of a cross section in the thickness direction of the through hole electrode substrate.

[0052] The diameter φ of the first through hole varies depending on the cross-sectional shape of the first through hole. When the cross-sectional shape of the first through hole is straight, the diameter φ of the first through hole is the diameter of the first through hole at the center in the thickness direction. When the cross-sectional shape of the first through hole is a forward tapered shape in which the opening diameter on the first surface 2a side is smaller than the opening diameter on the second surface 2b side as shown in FIG. 4( a), the diameter φ of the first through hole 2h is the distance between the intersection points of a tangent to the second surface 2b of the first through hole 2h and a tangent to the sidewall of the first through hole 2h. When the cross-sectional shape of the first through hole is a reverse tapered shape in which the opening diameter on the first surface 2a side is larger than the opening diameter on the second surface 2b side as shown in FIG. 4( b), the diameter φ of the first through hole 2h is the distance between the intersection points of a tangent to the first surface 2a of the first through hole 2h and a tangent to the sidewall of the first through hole 2h. When the cross-sectional shape of the first through hole 2h is an hourglass shape including a portion where the diameter is minimum at a predetermined position between the first surface 2a and the second surface 2b as shown in Fig. 4(c), the diameter φ of the first through hole 2h is the larger of the distance φ1 between the intersection points of a tangent to the first surface 2a of the first through hole 2h and a tangent to the side wall of the first through hole 2h and the distance φ2 between the intersection points of a tangent to the first surface 2a of the first through hole 2h and a tangent to the side wall of the first through hole 2h. When the cross-sectional shape of the first through hole 2h is a bow shape including a portion where the diameter is maximum at a predetermined position between the first surface 2a and the second surface 2b as shown in Fig. 4(d), the diameter φ of the first through hole 2h is the maximum diameter of the first through hole 2h between the first surface 2a and the second surface 2b.

[0053] The pitch of the first through holes is the distance between the centers of adjacent first through holes.

[0054] The method for forming the first through hole is appropriately selected depending on the material of the substrate, and examples thereof include etching, laser processing, sandblasting, drilling, and combinations thereof. Among these, a combination of laser irradiation and wet etching is preferable. Specifically, first, an altered layer is formed in the region of the substrate where the first through hole is to be formed by laser irradiation. Next, the substrate is immersed in hydrogen fluoride or the like to etch the altered layer. This allows the first through hole to be easily formed in the substrate.

[0055] A method for forming the first through hole so that the end of the first opening and the end of the second opening of the first through hole each have a curved surface includes forming the first through hole and then etching the first through hole, and adjusting the etching conditions allows the radius of curvature of the curved surface to be adjusted.

[0056] The opening diameter d4 on the first surface 2a side of the first through hole 2h and the opening diameter d5 on the second surface 2b side of the first through hole 2h are not particularly limited, and may be, for example, 50 μm or more and 100 μm or less, or 60 μm or more and 90 μm or less.

[0057] The thickness of the substrate is, for example, 100 μm or more, 200 μm or more, 300 μm or more, or 400 μm or more. By having the substrate thickness within the above range, it is possible to prevent the substrate from warping too much. This prevents the substrate from being difficult to handle during the manufacturing process and from warping due to internal stress of a thin film or the like disposed on the first or second surface of the substrate. On the other hand, the thickness of the substrate is, for example, 2000 μm or less, 1000 μm or less, or 800 μm or less. If the thickness of the substrate is within the above range, it is possible to shorten the time required for the step of forming first through holes in the substrate. Specifically, the thickness of the substrate is 100 μm or more to 2000 μm or less, 200 μm or more to 1000 μm or less, 300 μm or more to 1000 μm or less, or 400 μm or more to 800 μm or less.

[0058] 2. Through Electrode The through electrode in this embodiment is disposed in the first through hole of the substrate.

[0059] The through electrode may be of any shape, provided that it electrically connects the first and second surfaces of the substrate. The through electrode may be, for example, a through electrode filling the first through hole of the substrate, a so-called filled via, or a through electrode arranged only on the side wall of the first through hole of the substrate, a so-called conformal via. Furthermore, when the through electrode is a conformal via, a hollow portion may be arranged within the first through hole, and the first through hole may be filled with a resin portion. Among these, the through electrode is preferably a so-called filled via, in which the first through hole is filled with a conductive material. In particular, when a first covering insulating layer is arranged on the first surface side of the substrate, as described below, the through electrode is preferably a filled via. Compared to a conformal via, a filled via has a larger volume of conductive material within the through electrode, making the effect of stress more pronounced.

[0060] The material of the through electrode is not particularly limited as long as it is a conductive material, and conductive materials commonly used for through electrodes can be used, and the material is appropriately selected depending on the shape of the through electrode, the method of formation, etc. Examples of materials for the through electrode include metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, and chromium, and alloys containing these metals.

[0061] The through electrode may be a single layer or a multilayer structure having multiple layers stacked thereon. For example, the through electrode may have a seed layer disposed on the sidewall of the first through hole in the substrate and a plating layer disposed on the surface of the seed layer opposite the sidewall of the first through hole. The material of the seed layer can be appropriately selected from materials used for seed layers in general plating methods. The material of the seed layer is preferably a conductive material that adheres to the substrate, such as copper, titanium, molybdenum, tungsten, tantalum, nickel, chromium, aluminum, compounds thereof, and alloys thereof. When the plating layer contains copper, the material of the seed layer is preferably a material that can suppress the diffusion of copper into the substrate, such as titanium nitride, molybdenum nitride, and tantalum nitride. The material of the plating layer is preferably a conductive material that adheres to the seed layer, such as the materials of the through electrode described above.

[0062] Furthermore, in the through electrode, it is preferable that an adhesion layer is disposed on the side wall of the first through hole in the substrate. The adhesion layer improves adhesion between the substrate and the through electrode. The adhesion layer has high adhesion to the substrate. Furthermore, the adhesion layer may have the role of suppressing diffusion of metal elements in the through electrode into the inside of the substrate via the side wall of the through hole. When the through electrode has an adhesion layer, the through electrode may have, in this order from the side wall side of the first through hole in the substrate, an adhesion layer, a seed layer, and a plating layer.

[0063] When the conductive material constituting the through electrode is copper, examples of the material for the adhesion layer include titanium, titanium oxide, titanium nitride, molybdenum, molybdenum nitride, tantalum, and tantalum nitride. The adhesion layer may be a single layer or a multilayer. In particular, it is preferable that the adhesion layer contains titanium oxide as a main component.

[0064] Furthermore, when the through electrode is a conformal via and the through hole is filled with a resin portion, examples of the material for the resin portion include epoxy resin, acrylic resin, polyimide, polyamide, and polyester.

[0065] As a method for forming the through electrode, a general method for forming a through electrode can be used, and is appropriately selected depending on the shape of the through electrode, etc. Examples of the method for forming the through electrode include PVD methods such as vacuum deposition and sputtering, CVD methods, and plating methods.

[0066] 3. First Covering Insulating Layer In the present embodiment, the through-hole electrode substrate preferably has a first covering insulating layer disposed on the first surface side of the substrate so as to cover at least the boundary between the through-hole and the substrate, and having a second through hole connected to the first through hole of the substrate and penetrating the first covering insulating layer in the thickness direction. For example, in Figure 3, the through-hole electrode substrate 1 has a first covering insulating layer 41 disposed on the first surface 2a side of the substrate 2A so as to cover the boundary α between the through-hole 3 and the substrate 2A and having a second through hole 41h connected to the first through hole 2h, a first conductive portion 8 disposed in the second through hole 41h of the first covering insulating layer 41 and electrically connected to the through-hole 3, and a first conductive layer 5 disposed on the surface of the first covering insulating layer 41 opposite the substrate 2A and electrically connected to the first conductive portion 8.

[0067] Here, in the manufacture of a semiconductor device in which a through electrode substrate is interposed between an element and a motherboard, heat treatments such as annealing and reflow soldering are performed. FIGS. 6(a) and 6(b) are schematic diagrams illustrating the state of the through electrode substrate during heat treatment in the manufacturing process of the semiconductor device. In a through electrode substrate having through electrodes 3 filled in the first through holes 2h as shown in FIG. 6(a), a gap G may occur between the substrate 102 and the through electrode 3 during heat treatment due to the difference in thermal expansion coefficients between the substrate 102 and the through electrode 3, as shown in FIG. 6(b). Furthermore, during heat treatment, the through electrode 3 may bulge relative to the first or second surface of the substrate 102 due to the difference in thermal expansion coefficients between the substrate 102 and the through electrode 3, as shown in FIG. 6(b). Furthermore, during heat treatment, gas components such as moisture and hydrogen remaining in the material constituting the through electrode 3 may be released, causing the through electrode 3 to be pushed up. Such a gap or bulge may cause a disconnection in the conductive layer located near the boundary between the through electrode and the substrate. Furthermore, when the conductive layer is a pad portion, the wiring connected to the pad portion may be broken.

[0068] In this embodiment, a resin is used for the first covering insulating layer 41, as described below. As shown in FIG. 3 , when the first covering insulating layer 41 is arranged to cover the boundary α between the substrate 2A and the through electrode 3, a portion of the first covering insulating layer 41 contacts a portion of the through electrode 3. Therefore, even if gas is released from inside the through electrode 3 during heat treatment, the gas can be released to the outside through the first covering insulating layer 41. This prevents swelling of the first conductive layer 5 arranged near the boundary α. Furthermore, because the first covering insulating layer 41 is arranged to cover the boundary α between the substrate 2A and the through electrode 3, even if a gap occurs between the through electrode 3 and the substrate 2A during heat treatment, the gap between the through electrode 3 and the substrate 2A can be covered by the first covering insulating layer 41, preventing disconnection of the first conductive layer 5 located on the boundary α. Furthermore, even if a step occurs between the through electrode 3 and the substrate 2A due to gaps or swelling during heat treatment, the first covering insulating layer 41 can absorb the step between the through electrode 3 and the substrate 2A, thereby preventing a sudden step from occurring in the first conductive layer 5 located near the boundary α.

[0069] In this way, the first covering insulating layer is arranged to cover the boundary between the substrate and the through electrode, thereby preventing disconnection of the conductive layer arranged near the boundary between the through electrode and the substrate, thereby improving connection reliability and increasing yield.

[0070] The first covering insulating layer is preferably in direct contact with the substrate.

[0071] The material of the first covering insulating layer is preferably an insulating resin. Examples of insulating resins include polyimide, polyamide, polyamideimide, polyethylene terephthalate, polyethylene naphthalate, polyphenylene sulfide, polyether ether ketone, polyether sulfone, polycarbonate, polyetherimide, epoxy resin, phenol resin, polyphenylene ether, acrylic resin, polyolefin, polycycloolefin, and liquid crystal polymer compound. Examples of polyolefins include polyethylene and polypropylene. Examples of polycycloolefins include polynorbornene.

[0072] 7(a) to 7(c) are schematic cross-sectional views illustrating the arrangement of the first through hole of the substrate and the first covering insulating layer in the through electrode substrate. As shown in Fig. 7(a), the second through hole 41h in the first covering insulating layer 41 is connected to the first through hole 2h in the substrate 2A. It is preferable that the central axis C1 of the first through hole 2h in the substrate 2A substantially coincides with the central axis C2 of the second through hole 41h in the first covering insulating layer 41.

[0073] Furthermore, the opening diameter d12 of the second through hole 41h on the substrate 2A side of the first covering insulating layer 41 is preferably smaller than the opening diameter d4 of the first through hole 2h on the first surface 2a side of the substrate 2A. The ratio of d12 / d4 may be, for example, 0.5 or greater but less than 1.0, or 0.6 or greater but 0.9 or less. The opening diameter d12 of the second through hole 41h on the substrate 2A side of the first covering insulating layer 41 preferably satisfies the above ratio of d12 / d4, and may be, for example, 40 μm or greater but 85 μm or less, or 50 μm or greater but 80 μm or less.

[0074] Furthermore, it is preferable that the end E4 of the opening of the second through hole 41h on the substrate 2A side of the first covering insulating layer 41 is located more inward than the end E1 of the first opening of the first through hole 2h in the substrate 2A. By arranging the first covering insulating layer 41 having such a second through hole 41h, the boundary α between the substrate 2A and the through electrode 3 can be covered by the first covering insulating layer 41.

[0075] The cross-sectional shape of the second through hole 41h is preferably an inverted tapered shape, as shown in FIG. 7B, in which the opening diameter d12 of the second through hole 41h on the substrate 2A side is smaller than the opening diameter d13 of the second through hole 41h on the side opposite the substrate 2A. When the cross-sectional shape of the second through hole 41h is an inverted tapered shape, the angle θ11 between the sidewall SS of the second through hole 41h and the surface of the first covering insulating layer 41 opposite the substrate 2A becomes an obtuse angle in a cross-sectional view in the thickness direction of the first covering insulating layer 41. Therefore, even if the through electrode 3 expands and bulges, stress concentration near the end E3 of the opening of the second through hole 41h on the surface of the first covering insulating layer 41 opposite the substrate 2A can be suppressed. This prevents disconnection of the conductive layer disposed on the surface of the first covering insulating layer opposite the substrate.

[0076] The angle θ11 is not particularly limited and may be, for example, greater than 90 degrees and less than 130 degrees, or greater than 100 degrees and less than 120 degrees. When the angle θ11 is within the above range, disconnection of the conductive layer disposed on the surface of the first covering insulating layer opposite the substrate can be further suppressed. On the other hand, if the angle θ11 is too large, the opening diameter d13 of the second through hole 41h on the side opposite the substrate 2A becomes large, which may make the second through hole 41h unsuitable for high-density mounting.

[0077] 7(c), it is preferable that the end E3 of the opening of the second through hole 41h on the surface of the first covering insulating layer 41 opposite to the substrate 2A has a curved surface. By having the end E3 have a curved surface, disconnection of the conductive layer arranged on the surface of the first covering insulating layer opposite to the substrate can be further suppressed.

[0078] The method for forming the second through holes is appropriately selected depending on the material of the first covering insulating layer, and examples thereof include photolithography and laser processing. In the case of photolithography, the material of the first covering insulating layer may be a photosensitive material, and a resist pattern may be formed on the first covering insulating layer.

[0079] 4. First Conductive Portion The through electrode substrate in this embodiment may have a first conductive portion disposed in the second through hole of the first covering insulating layer and electrically connected to the through electrode. The first conductive portion is preferably directly connected to the through electrode.

[0080] The first conductive portion may be a via that fills the second through hole in the first covering insulating layer, a so-called filled via, or a via that is arranged only on the side wall of the second through hole in the first covering insulating layer, a so-called conformal via.

[0081] The material of the first conductive portion is the same as the material of the through electrode, and it is preferable that the material of the through electrode and the material of the first conductive portion are the same.

[0082] The first conductive portion can be formed by, for example, electrolytic plating. When the first conductive layer is disposed on the surface of the first coating insulating layer opposite the substrate, the first conductive portion is preferably formed simultaneously with the first conductive layer.

[0083] 5. First Conductive Layer The through hole electrode substrate in this embodiment may have a first conductive layer disposed on the first surface side of the substrate.

[0084] 8, for example, the through electrode substrate 1 has a first covering insulating layer 41 disposed on the first surface 2a of the substrate 2A, and further has, in order from the side of the first covering insulating layer 41, a first conductive layer 5a, a first interlayer insulating layer 7, and a first conductive layer 5b. The first conductive layer 5a is electrically connected to a first conductive portion 8, and the first conductive layers 5a, 5b are electrically connected by vias 10.

[0085] The first conductive layer may be a single layer or two or more layers. Two or more first conductive layers are preferably stacked in the thickness direction with a first interlayer insulating layer interposed therebetween. The first conductive layers stacked in the thickness direction may be electrically connected through vias.

[0086] When the first covering insulating layer is arranged on the first surface of the substrate, it is preferable that the through electrode substrate has, as the first conductive layer, a conductive layer arranged on the surface of the first covering insulating layer opposite the substrate and electrically connected to the first conductive portion.

[0087] The first conductive layer may function as a wiring or as a pad portion.

[0088] The number of wirings in one first conductive layer is not particularly limited, and is usually 2 or more, and may be 4 or more, 6 or more, 8 or more, 10 or more, 15 or more, or 100 or more. On the other hand, the number of wirings in one first conductive layer is, for example, 10 ６ There are less than 100 pieces.

[0089] The planar shape of the pad portion is not particularly limited, and may be the same as or different from the planar shape of the first through hole or the second through hole. Examples include a circle, an ellipse, a rectangle, a pentagon, a hexagon, or another polygon. The planar shape of the pad portion may also be a shape obtained by cutting out a portion of each of the above shapes.

[0090] Examples of the material for the first conductive layer include the same materials as those constituting the through electrodes.

[0091] The method for forming the first conductive layer may be an additive method or a subtractive method. In the additive method, for example, a resist pattern is formed by photolithography, and then a plating method is performed on the portions exposed from the resist pattern, thereby obtaining a patterned first conductive layer. When using electrolytic plating, a conductive film may be formed on the entire surface of the substrate or the first interlayer insulating layer before forming the resist pattern. In the subtractive method, for example, a resist pattern is formed on a conductive film formed on the entire surface of the substrate or the first interlayer insulating layer, and then the portions exposed from the resist pattern are etched, thereby obtaining a patterned first conductive layer.

[0092] The thickness of the first conductive layer is, for example, 0.1 μm to 20 μm, or may be 0.5 μm to 15 μm, 1 μm to 15 μm, 3 μm to 15 μm, or 5 μm to 15 μm. A relatively thin first conductive layer can be obtained by sputtering. A relatively thick first conductive layer can be obtained by plating.

[0093] 6. First Interlayer Insulating Layer The through hole electrode substrate in this embodiment may have a first interlayer insulating layer disposed on the first surface side of the substrate. The first interlayer insulating layer may be a single layer or may be two or more layers. The first interlayer insulating layer may be disposed between two first conductive layers.

[0094] The material of the first interlayer insulating layer is preferably an insulating resin, which is the same as the material of the covering insulating layer.

[0095] The thickness of the first interlayer insulating layer is, for example, 1.5 μm or more and 6 μm or less, and may be 2.5 μm or more and 6 μm or less.

[0096] The first interlayer insulating layer may be formed by, for example, photolithography or printing.

[0097] 7. Second Covering Insulating Layer and Second Conductive Portion The through electrode substrate in this embodiment preferably has a second covering insulating layer disposed on the second surface side of the substrate so as to cover at least the boundary between the through electrode and the substrate, and having a third through hole connecting to the first through hole. The through electrode substrate in this embodiment may also have a second conductive portion disposed in the third through hole of the second covering insulating layer and electrically connected to the through electrode.

[0098] For example, in Figure 3, the through electrode substrate 1 has a second covering insulating layer 42 arranged on the second surface 2b of the substrate 2A so as to cover the boundary β between the through electrode 3 and the substrate 2A and having a third through hole 42h connecting to the first through hole 2h, a second conductive portion 9 arranged within the third through hole 42h of the second covering insulating layer 42 and electrically connected to the through electrode 3, and a second conductive layer 15 arranged on the side of the second covering insulating layer 42 opposite the substrate 2A and electrically connected to the second conductive portion 9.

[0099] The second covering insulating layer has the same effects as the first covering insulating layer. The second covering insulating layer and the second conductive portion have the same effects as the first covering insulating layer and the first conductive portion, respectively.

[0100] 8. Second Conductive Layer and Second Interlayer Insulating Layer The through hole electrode substrate of this embodiment may have a second conductive layer disposed on the second surface side of the substrate. Also, the through hole electrode substrate of this embodiment may have a second interlayer insulating layer disposed on the second surface side of the substrate.

[0101] 8, for example, the through hole electrode substrate 1 has a second covering insulating layer 42 disposed on the second surface 2b of the substrate 2A, and further has a second conductive layer 15 disposed on the surface of the second covering insulating layer 42 opposite to the substrate 2A. The second conductive layer 15 is electrically connected to the second conductive portion 9.

[0102] The second conductive layer and the second interlayer insulating layer are similar to the first conductive layer and the first interlayer insulating layer, respectively.

[0103] II. Second Embodiment of Through Electrode Substrate A second embodiment of the through electrode substrate in the present disclosure achieves the second object described above.

[0104] The through electrode substrate in this embodiment includes a glass substrate having a first surface and a second surface opposite to the first surface and having a through hole, through electrodes arranged in the through holes of the glass substrate, a first wiring laminate arranged on the first surface side of the glass substrate and having one or more first insulating layers and one or more first conductive layers electrically connected to the through electrodes, and a second wiring laminate arranged on the second surface side of the glass substrate and having one or more second insulating layers and one or more second conductive layers electrically connected to the through electrodes, and the through electrode substrate includes a first wiring laminate having a first insulating layer and a second conductive layer electrically connected to the through electrodes, and the first wiring laminate has a first insulating layer and a second conductive layer electrically connected to the through electrodes. ｉ (MPa), and the difference between the thermal expansion coefficient of the i-th first insulating layer and the thermal expansion coefficient of the glass substrate is Δα ｉ ( / °C), and the temperature change during the formation of the i-th first insulating layer is ΔT ｉ (°C), the thickness of the i-th first insulating layer is h ｉ(mm), the stress F1 calculated by the following formula (1) is 13.4 MPa or less, and in the second wiring laminate, the Young's modulus of the kth (k=1 to n, n is the number of the second insulating layers included in the second wiring laminate) second insulating layer from the glass substrate side is E ｋ (MPa), and the difference between the thermal expansion coefficient of the k-th second insulating layer and the thermal expansion coefficient of the glass substrate is Δα ｋ ( / °C), and the temperature change during the formation of the kth second insulating layer is ΔT ｋ (°C), the thickness of the kth second insulating layer is h ｋ (mm), the stress F2 calculated by the following formula (2) is 13.4 MPa or less, the Young's modulus of the first insulating layer is 0.10 GPa or more, and the Young's modulus of the second insulating layer is 0.10 GPa or more.

[0105]

[0106] 9 is a schematic cross-sectional view showing an example of a through electrode substrate according to this embodiment. As shown in FIG. 9 , the through electrode substrate 1A includes a glass substrate 2 having a first surface 2a and a second surface 2b opposite the first surface 2a and having through holes 2c, through electrodes 3 disposed in the through holes 2c of the glass substrate 2, a first wiring stack 4A disposed on the first surface 2a side of the glass substrate 2, and a second wiring stack 14A disposed on the second surface 2b side of the glass substrate 2. The first wiring stack 4A includes five first insulating layers 4, five first conductive layers 5 electrically connected to the through electrodes 3, and first vias 6 electrically connecting the first conductive layers 5. Of the multiple first conductive layers 5, the first conductive layer 5 disposed farthest from the glass substrate 2 includes an element connection pad 11 electrically connected to an element. The second wiring laminate 14A has five second insulating layers 14, five second conductive layers 15 electrically connected to the through electrodes 3, and second vias 16 electrically connecting the second conductive layers 15. Of the multiple second conductive layers 15, the second conductive layer 15 located farthest from the glass substrate 2 includes a wiring board connection pad portion 12 electrically connected to the wiring board.

[0107] Generally, in a through hole electrode substrate, a photosensitive resin or a thermosetting resin is used as the material for the insulating layer. In the case of a photosensitive resin, the insulating layer formation process involves, for example, exposing a film containing the photosensitive resin to light, developing it, and curing it. The curing process involves heating. In the case of a thermosetting resin, the insulating layer formation process involves, for example, forming a patterned film containing the thermosetting resin and thermosetting it, or thermosetting a film containing the thermosetting resin and forming openings using a laser or the like.

[0108] The glass substrate and insulating layer expand when heated during curing in the insulating layer formation process, and then contract when cooled. This temperature change creates stress at the interface between the glass substrate and the insulating layer because the difference between the thermal expansion coefficients of glass and resin is large. Since the thermal expansion coefficient of the resin is greater than that of the glass, tensile stress acts on the edge of the glass substrate. Glass is vulnerable to tensile stress, so if there is a crack on the edge of the glass substrate, the crack will act as the starting point and the glass substrate will break from the edge.

[0109] In this embodiment, the stress F1 calculated by the above formula (1) is calculated based on the Young's modulus of the first insulating layer, the difference between the thermal expansion coefficient of the glass substrate and the thermal expansion coefficient of the first insulating layer, the temperature change during formation of the first insulating layer, and the thickness of the first insulating layer, and represents the total stress of the first wiring laminate. When the stress F1 calculated by the above formula (1) is equal to or less than a predetermined value, the total stress of the first wiring laminate can be reduced, thereby reducing shear stress applied to the glass substrate at the interface between the glass substrate and the first wiring laminate. Furthermore, in this embodiment, the stress F2 calculated by the above formula (2) is calculated based on the Young's modulus of the second insulating layer, the difference between the thermal expansion coefficient of the glass substrate and the thermal expansion coefficient of the second insulating layer, the temperature change during formation of the second insulating layer, and the thickness of the second insulating layer, and represents the total stress of the second wiring laminate. When the stress F2 calculated by the above formula (2) is equal to or less than a predetermined value, the total stress of the second wiring laminate can be reduced, thereby reducing shear stress applied to the glass substrate at the interface between the glass substrate and the second wiring laminate. Therefore, the tensile stress applied to the edge surface of the glass substrate can be reduced, and cracks from the edge surface of the glass substrate can be suppressed. Furthermore, since the Young's modulus of the first insulating layer and the Young's modulus of the second insulating layer are equal to or greater than a predetermined value, the insulating properties of the first insulating layer and the second insulating layer can be ensured.

[0110] Fig. 10 is a schematic plan view showing another example of a through electrode substrate in this embodiment. In Fig. 10, the through electrode substrate is a multi-faceted body 1B in which through electrode substrates are attached to multiple surfaces. In the multi-faceted body 1B of through electrode substrates, reference numeral 21 indicates a planned cutting line. Fig. 9 corresponds to the cross-sectional view taken along line A-A in Fig. 10.

[0111] When the multi-surface assembly is cut into individual pieces, cracks may occur on the cut surface of the glass substrate in the through-hole electrode substrate. If a crack occurs on the cut surface of the glass substrate, the glass substrate will break from the cut surface starting from the crack, as described above.

[0112] In contrast, in this embodiment, as described above, the stress F1 calculated by the above formula (1) is equal to or less than a predetermined value, and the stress F2 calculated by the above formula (2) is equal to or less than a predetermined value, so that the tensile stress applied to the cut surface of the glass substrate can be reduced, and cracks from the cut surface of the glass substrate can be suppressed.

[0113] Therefore, in this embodiment, a highly reliable through hole electrode substrate can be obtained.

[0114] Hereinafter, the through electrode substrate in this embodiment will be described for each configuration.

[0115] 1. Stress (1) Stress F1 In this embodiment, in the first wiring laminate, the Young's modulus of the i-th first insulating layer from the glass substrate side is defined as E ｉ (MPa), and the difference between the thermal expansion coefficient of the i-th first insulating layer and the thermal expansion coefficient of the glass substrate is Δα ｉ ( / °C), and the temperature change during the formation of the i-th first insulating layer is ΔT ｉ (°C), the thickness of the i-th first insulating layer is h ｉ (mm), the stress F1 calculated by the following formula (1) is 13.4 MPa or less, where i=1 to m and m is the number of first insulating layers included in the first wiring laminate.

[0116]

[0117] Here, first, the above formula (1-a) will be explained. The stress F1 (MPa) calculated by the above formula (1-a) is the stress of each first insulating layer, that is, the stress F1 of the first to m-th first insulating layers. ｉ (MPa). The stress F ｉ (MPa) is the Young's modulus of the i-th first insulating layer, E ｉ (MPa), the strain of the i-th first insulating layer is γ ｉ (-), the thickness factor of the i-th first insulating layer is h ｆｉ (mm / 1 mm), it is defined by the following formula (3): ｉ = E ｉ ×γ ｉ ×h ｆｉ (3) Strain γ of the i-th first insulating layerｉ (-) represents the difference between the thermal expansion coefficient of the i-th first insulating layer and the thermal expansion coefficient of the glass substrate, Δα ｉ ( / °C), and the temperature change during the formation of the i-th first insulating layer is ΔT ｉ (°C) and the length of the diagonal of the glass substrate is L (mm), it is defined by the following formula (4): ｉ =Δα ｉ ×ΔT ｉ ×(L / L) (4) The following formula (5) is derived from the above formulas (3) and (4). F ｉ = E ｉ ×Δα ｉ ×ΔT ｉ ×(L / L) × h ｆｉ (5) In the above formula (5), the stress F1 expressed by the above formula (1-a) is obtained by adding up the number of first insulating layers included in the first wiring laminate. Note that with respect to strain, (-) indicates that it is a dimensionless number.

[0118] Next, the relationship between the above formula (1-a) and formula (1) will be explained. First, the general definition of stress is N / m ２ It is defined as the force per unit area, as represented by the following equation. In the above equation (1-a), the stress F1 (MPa) is the sum of the stresses of each first insulating layer, and can be considered to be the sum of the stresses per unit thickness. Therefore, for the thickness, a thickness factor (mm / 1 mm) is used to represent the thickness per unit thickness. On the other hand, the thickness factor (mm / 1 mm) can be considered to be the thickness (mm). For example, if the thickness of the first insulating layer is 0.025 mm, the thickness factor of the first insulating layer is expressed as 0.025 mm / 1 mm. Therefore, the above equation (1-a) using the thickness factor (mm / 1 mm) can be considered to be the same as the above equation (1) using the thickness (mm). Therefore, the above equation (1) is adopted.

[0119] The stress F1 is 13.4 MPa or less, and may be 6.7 MPa or less, or 4.5 MPa or less. By having the stress F1 in the above range, the total stress of the first wiring laminate can be reduced, and the shear stress applied to the glass substrate at the interface between the glass substrate and the first wiring laminate can be reduced. On the other hand, the stress F1 is, for example, 0.1 MPa or more, or may be 0.2 MPa or more, or 0.6 MPa or more. Specifically, the stress F1 is preferably 0.1 MPa or more and 13.4 MPa or less, or may be 0.2 MPa or more and 6.7 MPa or less, or may be 0.6 MPa or more and 4.5 MPa or less.

[0120] The Young's modulus of the first insulating layer is 0.10 GPa or more, preferably 0.14 GPa or more, and more preferably 0.39 GPa or more. When the Young's modulus of the first insulating layer is within the above range, the insulating properties of the first insulating layer are good. On the other hand, the Young's modulus of the first insulating layer is, for example, 8.40 GPa or less, or may be 5.60 GPa or less, or may be 4.20 GPa or less. When the Young's modulus of the first insulating layer is within the above range, the stress F1 is likely to be within the above range. Specifically, the Young's modulus of the first insulating layer is 0.10 GPa or more and 8.40 GPa or less, or may be 0.14 GPa or more and 5.60 GPa or less, or may be 0.39 GPa or more and 4.20 GPa or less.

[0121] The Young's modulus of the first insulating layer is measured in accordance with ISO 14577. The measurement is performed on a cross section of the first insulating layer. The measurement conditions are as follows: indenter: Berkovich indenter, pressure approach speed: 100 nm / sec, maximum load: 10 mN, load application speed: 50 mN / sec, maximum load holding time: 10 sec, and unloading speed: 50 mN / sec. The measurement environment is a temperature of 25°C and a humidity of 60% RH. The average value of 10 different measurement locations is used. When the first wiring laminate has two or more first insulating layers, the measurement is performed on each of the first insulating layers.

[0122] The thermal expansion coefficient of the i-th first insulating layer is α ｉ , the thermal expansion coefficient of the glass substrate is α Ｇ When the difference Δα between the thermal expansion coefficient of the i-th first insulating layer and the thermal expansion coefficient of the glass substrate isｉ is |α ｉ -α Ｇ The thermal expansion coefficient of the glass substrate is expressed as α Ｇ is preferably, for example, 2 ppm / °C or more and 9 ppm / °C or less. The thermal expansion coefficient of the first insulating layer is, for example, 10 ppm / °C or more and 70 ppm / °C or less, or may be 17 ppm / °C or more and 65 ppm / °C or less, or may be 25 ppm / °C or more and 50 ppm / °C or less.

[0123] The thermal expansion coefficient of the glass substrate is measured by thermomechanical analysis (TMA) in accordance with JIS R3102: 1995. The thermal expansion coefficient of the glass substrate is the average linear expansion coefficient from 30°C to 260°C.

[0124] The thermal expansion coefficient of the first insulating layer is measured by thermomechanical analysis (TMA) in accordance with JIS K7197:2012. The thermal expansion coefficient of the first insulating layer is the average linear expansion coefficient from 20°C to 180°C. The measurement conditions are as follows. When the first wiring laminate has two or more first insulating layers, the measurement is performed for each first insulating layer. <Measurement conditions> Constant load tension mode: 20 mN Measurement temperature range: 0°C to 200°C Temperature range for calculating the linear expansion coefficient: 20°C to 180°C

[0125] Temperature change ΔT during formation of the i-th first insulating layer ｉ is the difference between the heating temperature at the time of curing in the process of forming the first insulating layer and room temperature. As will be described later, a photosensitive resin or a thermosetting resin is used as the material for the first insulating layer. In the case of a photosensitive resin, ΔT ｉ is the difference between the curing temperature and room temperature. For thermosetting resins, ΔT ｉ is the difference between the heat curing temperature and room temperature. In these cases, the maximum heating temperature during curing is assumed to be about 200°C, so assuming room temperature is 30°C, ΔT ｉ is 170°C.

[0126] The thickness of the first insulating layer is, for example, 1.5 μm or more, and may be 2.5 μm or more. On the other hand, the thickness of the first insulating layer is, for example, 30 μm or less. The thickness of the first insulating layer is, for example, 1.5 μm or more and 30 μm or less, and may be 2.5 μm or more and 30 μm or less. When the first wiring laminate has two or more first insulating layers, the thickness of the first insulating layer here refers to the thickness of each first insulating layer.

[0127] Furthermore, the total thickness of the first insulating layers included in the first wiring laminate is preferably 0.1 mm or more, and may be 0.2 mm or more, for example. The greater the total thickness of the first insulating layers, the greater the total stress of the first wiring laminate tends to be. Therefore, this embodiment is useful when the total thickness of the first insulating layers is within the above range. On the other hand, the total thickness of the first insulating layers is preferably 0.6 mm or less, and may be 0.3 mm or less, for example. If the total thickness of the first insulating layers is too large, it is disadvantageous in terms of cost. Specifically, the total thickness of the first insulating layers is preferably 0.1 mm or more and 0.6 mm or less, and may be 0.1 mm or more and 0.3 mm or less, or 0.2 mm or more and 0.3 mm or less.

[0128] In this specification, the thickness of each layer is measured based on an image of the cross section of the through hole electrode substrate taken using a scanning electron microscope (SEM). The thickness is the arithmetic average of the thicknesses at any five points.

[0129] In the through hole electrode substrate, the first wiring laminate may have a solder resist layer on the outermost surface. In this case, the solder resist layer is considered to be the first insulating layer.

[0130] The number m of first insulating layers included in the first wiring laminate is 1 or more, preferably 2 or more, more preferably 3 or more, and even more preferably 4 or more. The greater the number of first insulating layers, the greater the total stress of the first wiring laminate tends to be. Therefore, this embodiment is useful when the number of first insulating layers is within the above range. On the other hand, the number m of first insulating layers is preferably 10 or less, and may be 8 or less, or 7 or less. If the number of first insulating layers is too large, it is disadvantageous in terms of cost.

[0131] (2) Stress F2 In this embodiment, in the second wiring laminate, the Young's modulus of the kth second insulating layer from the glass substrate side is defined as E ｋ (MPa), and the difference between the thermal expansion coefficient of the kth second insulating layer and the thermal expansion coefficient of the glass substrate is Δα ｋ ( / °C), and the temperature change during the formation of the kth second insulating layer is ΔT ｋ (°C), the thickness of the kth second insulating layer is h ｋ (mm), the stress F2 calculated by the following formula (2) is 13.4 MPa or less, where k=1 to n, and n is the number of second insulating layers included in the second wiring laminate.

[0132]

[0133] In the above formula (2-a), h ｆｋ represents the thickness factor (mm / 1 mm) of the kth second insulating layer. The relationship between the above formula (2-a) and the above formula (2) can be explained in the same way as the relationship between the above formula (1-a) and the above formula (1).

[0134] The stress F2 is the same as the stress F1, and the Young's modulus of the second insulating layer is the same as the Young's modulus of the first insulating layer.

[0135] The thermal expansion coefficient of the kth second insulating layer is α ｋ , the thermal expansion coefficient of the glass substrate is α Ｇ When the difference Δα between the thermal expansion coefficient of the k-th second insulating layer and the thermal expansion coefficient of the glass substrate is ｋ is |α ｋ -α Ｇ The thermal expansion coefficient of the glass substrate is expressed as α Ｇ The coefficient of linear expansion of the second insulating layer is the same as the coefficient of thermal expansion of the first insulating layer.

[0136] Temperature change ΔT during formation of the kth second insulating layer ｋ is the temperature change ΔT during the formation of the i-th first insulating layer. ｉ Similarly, the temperature is set to 170° C., assuming the difference between the heating temperature during curing in the step of forming the second insulating layer and room temperature.

[0137] The thickness of the second insulating layer is the same as the thickness of the first insulating layer, and the total thickness of the second insulating layers included in the second wiring stack is the same as the total thickness of the first insulating layers included in the first wiring stack.

[0138] In the through hole electrode substrate, the second wiring laminate may have a solder resist layer on the outermost surface. In this case, the solder resist layer is considered to be the second insulating layer.

[0139] The number n of second insulating layers included in the second wiring laminate is the same as the number m of first insulating layers included in the first wiring laminate.

[0140] 2. First Wiring Stack The first wiring stack in this embodiment is disposed on the first surface side of the glass substrate, and has one or more first insulating layers and one or more first conductive layers electrically connected to the through electrodes.

[0141] (1) First Insulating Layer The material of the first insulating layer is an insulating resin, and is a photosensitive resin or a thermosetting resin. The material of the first insulating layer is not particularly limited as long as it satisfies the above-mentioned Young's modulus and stress F1. As the photosensitive resin and the thermosetting resin, photosensitive resins and thermosetting resins commonly used for insulating layers can be used. Examples include polyimide, epoxy resin, acrylic resin, polybenzoxazole, polyphenylene ether, and polycycloolefin. From the viewpoint of good heat resistance and processability, epoxy resin and polyimide are preferred. The first insulating layer may also contain a resin other than the photosensitive resin and the thermosetting resin. The materials of the multiple first insulating layers may be the same or different from each other.

[0142] The first insulating layer also includes a solder resist layer, and a general solder resist can be used as the solder resist.

[0143] The first insulating layer may be formed, for example, by forming a first insulating layer having an opening by photolithography or screen printing, or by forming an opening in the first insulating layer by laser processing.

[0144] (2) Preferred Aspects of the First Insulating Layer In the manufacture of a semiconductor device, heat treatments such as annealing and reflow soldering are performed. FIGS. 6( a) and 6(b) are schematic diagrams illustrating the state of the through-hole electrode substrate during heat treatment in the manufacturing process of the semiconductor device. Since FIGS. 6( a) and 6(b) were described in the section on the first embodiment of the through-hole electrode substrate, their description is omitted here. As shown in FIG. 6(b), if such gaps or bulges occur, the first conductive layer disposed near the boundary between the through-hole electrode and the glass substrate may be disconnected. Furthermore, if such bulges propagate to the element connection pad via the first insulating layer, the first conductive layer, and the first via, the pad and the wiring connected to the pad may be disconnected. Furthermore, poor connection with the element may occur.

[0145] 9 , of the multiple first insulating layers 4 in the first wiring laminate 4A arranged on the first surface 2a side of the glass substrate 2, the first insulating layer 4 located closest to the glass substrate 2 is preferably a first covering insulating layer 41. The first covering insulating layer 41 is arranged on the first surface 2a side of the glass substrate 2 so as to cover the boundary α between the through electrode 3 and the glass substrate 2, and has an opening 41c connecting to the through hole 2c. A first via 6 electrically connected to the through electrode 3 is arranged in the opening 41c of the first covering insulating layer 41.

[0146] In this way, the first covering insulating layer is arranged so as to cover the boundary between the glass substrate and the through electrode, thereby making it possible to prevent disconnection of the first conductive layer and the pad portion arranged near the boundary between the through electrode and the glass substrate, thereby improving yield.

[0147] As described below, a resin is used for the first covering insulating layer 41. As shown in Figure 9, when the first covering insulating layer 41 is arranged to cover the boundary α between the glass substrate 2 and the through electrode 3, a portion of the first covering insulating layer 41 contacts a portion of the through electrode 3. Therefore, even if gas is released from inside the through electrode 3 during heat treatment, the gas can be released to the outside through the first covering insulating layer 41. This prevents swelling of the first conductive layer 5 arranged near the boundary α. Furthermore, because the first covering insulating layer 41 is arranged to cover the boundary α between the glass substrate 2 and the through electrode 3, even if a gap occurs between the through electrode 3 and the glass substrate 2 during heat treatment, the gap between the through electrode 3 and the glass substrate 2 can be covered by the first covering insulating layer 41, preventing disconnection of the first conductive layer 5 located on the boundary α. Furthermore, even if a gap or bulge occurs during heat treatment, causing a step between the through electrode 3 and the glass substrate 2, the first covering insulating layer 41 can absorb the step between the through electrode 3 and the glass substrate 2, thereby preventing a sudden step from occurring in the first conductive layer 5 disposed near the boundary α. This prevents such bulge from spreading to the element connection pad 11. Therefore, by providing the first covering insulating layer 41, disconnection and cracking of the element connection pad 11 can be prevented, and connection reliability can be improved.

[0148] The first covering insulating layer is preferably in direct contact with the glass substrate.

[0149] 11(a) to 11(c) are schematic cross-sectional views illustrating the arrangement of the through holes of the glass substrate and the first covering insulating layer in the through electrode substrate. Note that the explanation of FIG. 11(a) to 11(c) is the same as the explanation of FIG. 7(a) to 7(c) described in the section on the first embodiment of the through electrode substrate, and therefore will be omitted.

[0150] (3) First Conductive Layer The first conductive layer may be one layer or two or more layers. When the first wiring laminate has two or more first conductive layers, the first conductive layers are stacked in the thickness direction with a first insulating layer interposed therebetween. The first conductive layers are electrically connected via a first via. For example, in FIG. 9 , in the first wiring laminate 4A, five first insulating layers 4 and five first conductive layers 5 are alternately stacked. The first conductive layers 5 are electrically connected by a first via 6. The first conductive layer 5 located on the surface opposite the glass substrate 2 of the first insulating layer 4 located farthest from the glass substrate 2 includes an element connection pad portion 11.

[0151] The material of the first conductive layer is not particularly limited as long as it is a conductive material, and conductive materials generally used for wiring on wiring substrates can be used. Examples of conductive materials include metallic materials such as metals, alloys, and metal oxides, conductive resin compositions containing conductive fillers and resins, and conductive polymers. When the first conductive layer located on the surface opposite the glass substrate of the first insulating layer located farthest from the glass substrate includes an element connection pad portion, a metallic material is used as the material of the element connection pad portion.

[0152] The thickness and formation method of the first conductive layer are the same as those described in the section on the first conductive layer in the first embodiment of the through hole electrode substrate.

[0153] When the first conductive layer located on the surface of the first insulating layer located farthest from the glass substrate opposite the glass substrate includes an element connection pad, the thickness of the element connection pad is the same as the thickness of a general wiring. The thickness of the element connection pad is, for example, 0.05 μm to 100 μm, or 0.1 μm to 50 μm, or 0.2 μm to 10 μm. This allows for sufficient conductivity.

[0154] (4) First Via The first via may be a via that fills the opening in the first insulating layer, a so-called filled via, or a via that is arranged only on the sidewall of the opening in the first insulating layer, a so-called conformal via.

[0155] The material for the first via is not particularly limited as long as it is a conductive material, and conductive materials used for general vias can be used, and is selected appropriately depending on the shape of the via, the formation method, etc.

[0156] As a method for forming the first via, a general method for forming a via can be used, and the method is appropriately selected depending on the shape of the via, etc.

[0157] (5) Arrangement of First Wiring Stack When the through electrode substrate in this embodiment is a multi-surface structure, as shown in FIGS. 12( a) and 12(b) described below, the glass substrate 2 may have first cutting grooves 22 on the first surface 2a and second cutting grooves 23 on the second surface 2b along the planned cutting lines 21. In this case, as shown in FIG. 12(a), the first wiring stack 4A may be arranged over the entire first surface 2a of the glass substrate 2. Alternatively, as shown in FIG. 12(b), the first wiring stack 4A may be arranged in an area other than the first cutting grooves 22 on the first surface 2a of the glass substrate 2. In FIG. 12(a), although not shown, the first insulating layer of the first wiring stack 4A is arranged over the entire first surface 2a of the glass substrate 2, and the first cutting grooves 22 on the glass substrate 2 are covered by the first insulating layer. On the other hand, in FIG. 12(b), the first cutting grooves 22 on the glass substrate 2 are exposed.

[0158] When the first wiring laminate is disposed over the entire first surface of the glass substrate, the first wiring laminate is easily formed, whereas when the first wiring laminate is disposed in an area other than the first cutting groove on the first surface of the glass substrate, peeling of the first insulating layer from the glass substrate at the cut surface of the glass substrate can be suppressed.

[0159] Furthermore, as shown in Figure 13 described below, in the polyhedral body 1B of the through electrode substrate, it is preferable that the corners 22a of the opening of the first cutting groove 22 are rounded, and it is preferable that the corners 23a of the opening of the second cutting groove 23 are rounded.

[0160] When a polyhedral assembly 1B of a through hole electrode substrate as shown in Fig. 12(a) is cut along the first cutting grooves 22 and the second cutting grooves 23 to separate the pieces, a through hole electrode substrate 1C as shown in Fig. 14(a) is obtained. In the through hole electrode substrate 1C, the cut surface of the glass substrate 2 is exposed at the end of the glass substrate 2, and first curved surface portions 24a originating from the corners of the openings of the first cutting grooves are covered with the first wiring laminate 4A, and second curved surface portions 24b originating from the corners of the openings of the second cutting grooves are covered with the second wiring laminate 14A. That is, the end of the glass substrate 2 has a flat portion 24c which is the cut surface, a first curved surface portion 24a which connects the flat portion 24c and the first surface 2a, and a second curved surface portion 24b which connects the flat portion 24c and the second surface 2b, and the flat portion 24c is exposed, the first curved surface portion 24a is covered with the first wiring laminate 4A, and the second curved surface portion 24b is covered with the second wiring laminate 14A.

[0161] Generally, the manufacture of a through-hole electrode substrate is performed by using a large insulating substrate and forming multiple electrodes. When cutting a multi-sided through-hole electrode substrate into individual pieces, grooves are not usually formed in advance in the glass substrate along the planned cutting lines before forming an insulating layer and a conductive layer on the glass substrate. Furthermore, grooves are not usually formed in advance in the glass substrate along the planned cutting lines and the corners of the groove openings are not rounded before forming an insulating layer and a conductive layer on the glass substrate. Therefore, when cutting a multi-sided through-hole electrode substrate into individual pieces, the corners of the cut surface of the glass substrate are not rounded.

[0162] 14( a), when the first wiring stack 4A is disposed at the end of the glass substrate 2, it can be estimated that the polyhedral assembly 1B of the through electrode substrate as shown in FIG. 12( a) has been cut and separated along the first cutting groove 22 and the second cutting groove 23. In this case, as will be described later, the corners 22a of the openings of the first cutting groove 22 are rounded, and the corners 23a of the openings of the second cutting groove 23 are rounded. This prevents stress from concentrating on the corners 22a of the openings of the first cutting groove 22 and the corners 23a of the openings of the second cutting groove 23 when the polyhedral assembly 1B of the through electrode substrate is cut along the first cutting groove 22 and the second cutting groove 23. This prevents cracks from occurring on the cut surface of the glass substrate, and prevents breakage from occurring at the cut surface of the glass substrate.

[0163] On the other hand, when the polyhedral body 1B of the through electrode substrate as shown in FIG. 12(b) is cut along the first cutting groove 22 and the second cutting groove 23 to separate the pieces, the through electrode substrate 1C as shown in FIG. 14(b) is obtained. In the through electrode substrate 1C, the cut surface of the glass substrate 2 is exposed at the end of the glass substrate 2, and the first curved surface portion 24a derived from the corner of the opening of the first cutting groove and the second curved surface portion 24b derived from the corner of the opening of the second cutting groove are also exposed. That is, the end of the glass substrate 2 has a flat portion 24c which is the cut surface, a first curved surface portion 24a connecting the flat portion 24c and the first surface 2a, and a second curved surface portion 24b connecting the flat portion 24c and the second surface 2b, and the flat portion 24c, the first curved surface portion 24a, and the second curved surface portion 24b are exposed.

[0164] In the above case, as will be described later, corners 22a of the openings of first cutting grooves 22 are rounded and corners 23a of the openings of second cutting grooves 23 are rounded, which makes it possible to prevent stress from concentrating on corners 22a of first cutting grooves 22 and corners 23a of second cutting grooves 23 when polyhedral body 1B of the through electrode substrate is cut along first cutting grooves 22 and second cutting grooves 23. This makes it possible to prevent cracks from occurring on the cut surface of the glass substrate and to prevent breakage from occurring at the cut surface of the glass substrate.

[0165] As shown in Figures 15(a) to 15(d) described below, the edge of the glass substrate 2 is preferably covered with at least one of the first insulating layer 4 and the second insulating layer 14. This can prevent cracks from occurring at the edge of the glass substrate during the manufacturing process of the through hole electrode substrate. This can prevent breakage from occurring at the edge of the glass substrate. When the through hole electrode substrate is a multi-surface body, it is preferable that the edge of the large glass substrate be covered with at least one of the first insulating layer and the second insulating layer.

[0166] When first insulating layers are disposed at the edge of the glass substrate, the number of first insulating layers disposed at the edge of the glass substrate may be at least 1. The first insulating layers disposed at the edge of the glass substrate may be some or all of the first insulating layers included in the first wiring laminate.

[0167] 3. Second Wiring Stack The second wiring stack in this embodiment is disposed on the second surface side of the glass substrate, and has one or more second insulating layers and one or more second conductive layers electrically connected to the through electrodes.

[0168] (1) Second Insulating Layer The second insulating layer is similar to the first insulating layer in the above-described first wiring laminate.

[0169] The number of second insulating layers included in the second wiring laminate is preferably the same as the number of first insulating layers included in the first wiring laminate. This is because warping of a large glass substrate can be suppressed when using a large glass substrate. This is also preferable because the first insulating layers and the second insulating layers can be alternately stacked on the glass substrate in the manufacturing process of the through electrode substrate.

[0170] 9 , of the plurality of second insulating layers 14 arranged on the second surface 2b side of the glass substrate 2, the second insulating layer 14 located closest to the glass substrate 2 is preferably a second covering insulating layer 42. The second covering insulating layer 42 is arranged on the second surface 2b side of the glass substrate 2 so as to cover the boundary β between the through electrode 3 and the glass substrate 2, and has an opening 42c connecting to the through hole 2c. A second via 16 electrically connected to the through electrode 3 is arranged within the opening 42c of the second covering insulating layer 42.

[0171] The second covering insulating layer has the same effects as the first covering insulating layer described above, and is similar to the first covering insulating layer in the first wiring laminate described above.

[0172] (2) Second Conductive Layer and Second Via The second conductive layer and second via are similar to the first conductive layer and first via in the above-described first wiring laminate.

[0173] (3) Arrangement of Second Wiring Stack As described above, when the through electrode substrate in this embodiment is a multi-surface structure, the glass substrate 2 may have first cutting grooves 22 on the first surface 2a and second cutting grooves 23 on the second surface 2b along the planned cutting lines 21, as shown in FIGS. 12(a) and 12(b) described below. In this case, as shown in FIG. 12(a), the second wiring stack 14A may be arranged over the entire second surface 2b of the glass substrate 2, or as shown in FIG. 12(b), the second wiring stack 14A may be arranged in an area other than the second cutting grooves 23 on the second surface 2b of the glass substrate 2. Although not shown in FIG. 12(a), the second insulating layer of the second wiring stack 14A is arranged over the entire second surface 2b of the glass substrate 2, and the second cutting grooves 23 on the glass substrate 2 are covered by the second insulating layer. On the other hand, in FIG. 12(b), the second cutting grooves 23 on the glass substrate 2 are exposed.

[0174] When the second wiring laminate is disposed over the entire second surface of the glass substrate, the second wiring laminate is easily formed, whereas when the second wiring laminate is disposed in an area other than the second cutting grooves on the second surface of the glass substrate, peeling of the second insulating layer from the glass substrate at the cut surface of the glass substrate can be suppressed.

[0175] Furthermore, as described in the section on the first wiring laminate above, when the multi-sided assembly 1B of the through electrode substrate as shown in Fig. 12(a) is cut along the first cutting groove 22 and the second cutting groove 23 to separate it, the through electrode substrate 1C as shown in Fig. 14(a) is obtained. Furthermore, when the multi-sided assembly 1B of the through electrode substrate as shown in Fig. 12(b) is cut along the first cutting groove 22 and the second cutting groove 23 to separate it, the through electrode substrate 1C as shown in Fig. 14(b) is obtained. When the second wiring laminate 14A is arranged as shown in Figs. 14(a) and 14(b), it is possible to suppress the occurrence of cracks on the cut surface of the glass substrate, and it is possible to suppress breakage from the cut surface of the glass substrate.

[0176] 15(a) to 15(d), the edge of the glass substrate 2 is preferably covered with at least one of the first insulating layer 4 and the second insulating layer 14. When a second insulating layer is disposed at the edge of the glass substrate, the number of second insulating layers disposed at the edge of the glass substrate may be one or more. The second insulating layer disposed at the edge of the glass substrate may be some or all of the second insulating layers included in the second wiring laminate.

[0177] 4. Glass Substrate The glass substrate in this embodiment has a first surface and a second surface opposite to the first surface, and has a through-hole penetrating the glass substrate in the thickness direction.

[0178] The reasons why a glass substrate is preferred, the type of glass, the planar shape of the glass substrate, and the thickness of the glass substrate are the same as those described above in the section on the substrate in the first embodiment of the through hole electrode substrate.

[0179] The planar shape of the through hole in the glass substrate is, for example, approximately circular. Furthermore, the cross-sectional shape of the through hole 2c in the glass substrate 2 can be, for example, a straight shape as shown in FIG. 9 , an inverse tapered shape as shown in FIG. 16(a) in which the opening diameter on the first surface 2a side is larger than the opening diameter on the second surface 2b side, a forward tapered shape as shown in FIG. 16(b) in which the opening diameter on the first surface 2a side is smaller than the opening diameter on the second surface 2b side, an hourglass shape as shown in FIG. 16(c) in which the diameter is minimum at a predetermined position between the first surface 2a and the second surface 2b, or a bowing shape as shown in FIG. 16(d) in which the diameter is maximum at a predetermined position between the first surface 2a and the second surface 2b. FIGS. 16(a) to 16(d) are schematic cross-sectional views illustrating examples of the cross-sectional shape of the through hole in the glass substrate. The cross-sectional shape of the through hole in the glass substrate is preferably either an inverse tapered shape or an hourglass shape. In addition, in each cross-sectional shape of the through hole in the glass substrate, it is preferable that an edge E1 of the opening of the through hole 2c on the first surface 2a of the glass substrate 2, an edge E2 of the opening of the through hole 2c on the second surface 2b of the glass substrate 2, and a minimum and maximum diameter portion of the through hole 2c in the glass substrate 2 have curved surfaces, which can suppress disconnection between the through electrode and the via or conductive layer in contact with the through electrode.

[0180] When the through electrode substrate in this embodiment is a polyhedral body, as shown in Figures 12(a) and 12(b), the glass substrate 2 preferably has first cutting grooves 22 on the first surface 2a and second cutting grooves 23 on the second surface 2b along the planned cutting lines 21. In this case, as shown in Figure 13, corners 22a of the openings of the first cutting grooves 22 are preferably rounded, and corners 23a of the openings of the second cutting grooves 23 are preferably rounded. By rounding the corners 22a of the openings of the first cutting grooves 22 and the corners 23a of the openings of the second cutting grooves 23, stress concentration at the corners 22a of the openings of the first cutting grooves 22 and the corners 23a of the openings of the second cutting grooves 23 can be suppressed when the polyhedral body 1B of the through electrode substrate is cut along the first cutting grooves 22 and the second cutting grooves 23. This can prevent cracks from occurring on the cut surface of the glass substrate, and can prevent breakage from occurring at the cut surface of the glass substrate.

[0181] The radius of curvature R1 of the corner 22a of the opening of the first cutting groove 22 is, for example, preferably 10 μm or more, more preferably 20 μm or more, and even more preferably 50 μm or more. If the radius of curvature R1 is within the above range, stress concentration is likely to be suppressed. On the other hand, the radius of curvature R1 is, for example, preferably 100 μm or less, more preferably 80 μm or less, and even more preferably 70 μm or less. If the radius of curvature R1 is within the above range, a wide effective area can be ensured. Specifically, the radius of curvature R1 is 10 μm or more and 100 μm or less, or may be 20 μm or more and 80 μm or less, or may be 50 μm or more and 70 μm or less.

[0182] The radius of curvature R2 of the corner 23 a of the opening of the second cutting groove 23 is the same as the radius of curvature R1 of the corner 22 a of the opening of the first cutting groove 22. The radius of curvature R1 and the radius of curvature R2 may be the same or different from each other.

[0183] Furthermore, when the width W10 of the blade used to cut the polygonal body is taken as the width W10, the width W1 of the bottom 22b of the first cutting groove 22 preferably satisfies the relationship W1≦W10. As shown in Figures 17(a) and 17(b), if the width W1 of the bottom 22b of the first cutting groove 22 is greater than the width W10 of the blade 100, when the polygonal body is cut, the cut surface of the glass substrate 2 will have corners 101 originating from the bottom 22b of the first cutting groove 22, and these corners 101 will likely be sharp. In contrast, as shown in Figures 18(a) and 18(b), if the width W1 of the bottom 22b of the first cutting groove 22 is less than the width W10 of the blade 100, when the polygonal body is cut, the bottom 22b of the first cutting groove 22 will be completely cut, and the cut surface of the glass substrate 2 will not have corners originating from the bottom 22b of the first cutting groove 22. Therefore, when the multi-surface mounting body is cut, it is possible to suppress the occurrence of cracks on the cut surface of the glass substrate, and it is possible to further suppress the breakage of the glass substrate from the cut surface.

[0184] Furthermore, it is preferable that the width W1 of the bottom 22b of the first cutting groove 22 satisfy the relationship W1 + 2 × R1 > W10. As shown in Figures 19(a) and 19(b), if W1 + 2 × R1 ≦ W10, when the polygonal assembly is cut, all of the rounded corners 22a of the first cutting groove 22 are cut off, which tends to result in sharp corners on the cut surface of the glass substrate 2. In contrast, as shown in Figures 18(a) and 18(b), if W1 + 2 × R1 > W10, when the polygonal assembly is cut, the rounded corners 22a of the first cutting groove 22 remain, which leaves rounded corners on the cut surface of the glass substrate 2. Therefore, when the polygonal assembly is cut, cracks can be suppressed from occurring on the cut surface of the glass substrate, further suppressing breakage from the cut surface of the glass substrate.

[0185] It is preferable that the width W1 of the bottom 22b of the first cutting groove 22 satisfies the above relationship, specifically, it is preferably 20 μm or more and 150 μm or less, more preferably 50 μm or more and 120 μm or less, and even more preferably 60 μm or more and 110 μm or less.

[0186] The width W2 of the bottom 23b of the second cutting groove 23 is the same as the width W1 of the bottom 22b of the first cutting groove 22. The width W1 and the width R2 may be the same or different from each other.

[0187] The depth d1 of the first cutting grooves 22 preferably satisfies the relationship T≧6.7×d1, where T is the thickness of the glass substrate 2. The depth d1 of the first cutting grooves 22 is, for example, 30 μm or more and 150 μm or less, or may be 40 μm or more and 140 μm or less, or may be 50 μm or more and 130 μm or less.

[0188] The depth d2 of the second cutting grooves 23 is the same as the depth d1 of the first cutting grooves 22. The depth d1 and the depth d2 may be the same or different from each other.

[0189] The radius of curvature, bottom width, and depth of the opening of the first cutting groove, and the radius of curvature, bottom width, and depth of the opening of the second cutting groove are measured based on a cross-sectional image of the through-hole electrode substrate taken using a scanning electron microscope (SEM). The radius of curvature of the groove opening is the arithmetic mean value of the radii of curvature of the opening of the groove at any five locations. The width of the bottom of the groove is the arithmetic mean value of the width of the bottom of the groove at any five locations. The depth of the groove is the arithmetic mean value of the depth of the groove at any five locations.

[0190] The pitch of the first cutting grooves is appropriately selected depending on the application, and may be, for example, 10 mm or more and 250 mm or less, 20 mm or more and 200 mm or less, or 50 mm or more and 150 mm or less.

[0191] The pitch of the second cutting grooves is the same as the pitch of the first cutting grooves.

[0192] The first cutting groove and the second cutting groove are arranged so as to overlap in a plan view.

[0193] Methods for forming the first cutting groove and the second cutting groove include etching the glass substrate, modifying the glass substrate with laser light and then etching it by wet etching, and combining mechanical groove processing and etching.

[0194] Furthermore, as shown in Figures 15(b) to 15(d), it is preferable that the glass substrate 2 is chamfered. That is, it is preferable that the edge of the glass substrate 2 has a chamfered portion. In Figure 15(b), the glass substrate 2 is C-chamfered, and the edge of the glass substrate 2 has a chamfered portion 25. In Figure 15(c), the glass substrate 2 is R-chamfered, and the edge of the glass substrate 2 has a chamfered portion 25, which is a curved surface. In particular, it is preferable that the edge of the glass substrate 2 is R-chamfered, and the edge of the glass substrate 2 has a chamfered portion 25, which is a curved surface. By having a chamfered portion with a curved surface, it is possible to suppress the occurrence of cracks at the edge of the glass substrate, and to suppress breakage from the edge of the glass substrate. 15(d), it is particularly preferable that the edge of the glass substrate 2 be rounded and have a first inclined portion 26a connecting to the first surface 2a, a second inclined portion 26b connecting to the second surface 2b, and a curved portion 27 connecting the first inclined portion 26a and the second inclined portion 26b. By having the edge of the glass substrate 2 have the first inclined portion 26a and the second inclined portion 26b in addition to the curved portion 27, it is possible to further suppress cracks from occurring at the edge of the glass substrate, and to further suppress breakage from the edge of the glass substrate. Furthermore, when chemical mechanical polishing (CMP) is performed on the glass substrate 2, by having the edge of the glass substrate 2 have the first inclined portion 26a and the second inclined portion 26b in addition to the curved portion 27, it is possible to suppress damage during CMP.

[0195] The angle θ2 between the plane including the first inclined portion 26 a and the first surface 2 a is, for example, preferably 2° to 13°, more preferably 3° to 11°, and even more preferably 4° to 10°, which can further suppress cracks from occurring at the edge of the glass substrate and can further suppress breakage from the edge of the glass substrate.

[0196] The angle θ3 between the plane including the second inclined portion 26b and the second surface 2b is the same as the angle θ2 between the plane including the first inclined portion 26a and the first surface 2a. The angle θ2 and the angle θ3 may be the same or different from each other.

[0197] The angles θ2 and θ3 are measured based on an image of the cross section of the glass substrate 2 taken with a scanning electron microscope (SEM). Specifically, the angle θ2 is determined by drawing a right triangle with the tangent to the first inclined portion 26a as its hypotenuse on the cross section of the glass substrate 2 and measuring the height and base of the right triangle. Similarly, the angle θ3 is determined by drawing a right triangle with the tangent to the second inclined portion 26b as its hypotenuse on the cross section of the glass substrate 2 and measuring the height and base of the right triangle.

[0198] When the through electrode substrate is a multi-surface body, it is preferable that the edge of the large glass substrate has the above-mentioned shape.

[0199] The size of the glass substrate is not particularly limited. The glass substrate usually has a rectangular shape in a plan view, and in this case, the length of the long side of the glass substrate is, for example, 70 mm to 250 mm, or alternatively, 90 mm to 200 mm, or alternatively, 100 mm to 140 mm.

[0200] 5. Through Electrode The through electrode in this embodiment is disposed in the through hole of the glass substrate. The through electrode is the same as that described in the section on the through electrode in the first embodiment of the through electrode substrate.

[0201] III. Third Embodiment of Through Electrode Substrate A third embodiment of the through electrode substrate in the present disclosure achieves the second object described above.

[0202] The through electrode substrate of this embodiment includes a glass substrate having a first surface and a second surface opposite to the first surface and having a through hole; through electrodes arranged in the through holes of the glass substrate; and a first wiring laminate arranged on the first surface side of the glass substrate and having one or more first insulating layers and one or more first conductive layers electrically connected to the through electrodes, wherein the Young's modulus of the ith first insulating layer (i=1 to m, m is the number of first insulating layers included in the first wiring laminate) from the glass substrate side in the first wiring laminate is defined as E ｉ (MPa), and the difference between the thermal expansion coefficient of the i-th first insulating layer and the thermal expansion coefficient of the glass substrate is Δα ｉ( / °C), and the temperature change during the formation of the i-th first insulating layer is ΔT ｉ (°C), the thickness of the i-th first insulating layer is h ｉ (mm), the stress F1 calculated by the following formula (1) is 13.4 MPa or less, and the Young's modulus of the first insulating layer is 0.10 GPa or more.

[0203]

[0204] 20 is a schematic cross-sectional view showing an example of a through electrode substrate according to this embodiment. As shown in FIG. 20 , the through electrode substrate 1D includes a glass substrate 2 having a first surface 2a and a second surface 2b opposite the first surface 2a, a through hole 2c, through electrodes 3 disposed in the through holes 2c of the glass substrate 2, and a first wiring stack 4A disposed on the first surface 2a side of the glass substrate 2. The first wiring stack 4A includes five first insulating layers 4, five first conductive layers 5 electrically connected to the through electrodes 3, and first vias 6 electrically connecting the first conductive layers 5. Of the multiple first conductive layers 5, the first conductive layer 5 disposed farthest from the glass substrate 2 includes an element connection pad 11 electrically connected to an element. Furthermore, a wiring board connection pad 12 electrically connected to the through electrodes 3 and electrically connected to the wiring board is disposed on the second surface 2b side of the glass substrate 2.

[0205] In this embodiment, the stress F1 calculated by the above formula (1) is calculated based on the Young's modulus of the first insulating layer, the difference between the thermal expansion coefficient of the glass substrate and the thermal expansion coefficient of the first insulating layer, the temperature change during formation of the first insulating layer, and the thickness of the first insulating layer, and represents the total stress of the first wiring laminate. When the stress F1 calculated by the above formula (1) is equal to or less than a predetermined value, the total stress of the first wiring laminate is reduced, and the shear stress applied to the glass substrate at the interface between the glass substrate and the first wiring laminate is reduced. This reduces the tensile stress applied to the edge of the glass substrate, thereby suppressing cracking from the edge of the glass substrate. Furthermore, when the Young's modulus of the first insulating layer is equal to or greater than a predetermined value, the insulation properties of the first insulating layer are ensured.

[0206] Fig. 10 is a schematic plan view showing another example of a through electrode substrate in this embodiment. In Fig. 10, the through electrode substrate is a multi-faceted body 1B in which through electrode substrates are attached to multiple surfaces. In the multi-faceted body 1B of through electrode substrates, reference numeral 21 indicates the planned cutting line. Fig. 20 corresponds to the cross-sectional view taken along line A-A in Fig. 10.

[0207] In this embodiment, as described above, since the stress F1 calculated by the above formula (1) is equal to or less than a predetermined value, the tensile stress applied to the cut surface of the glass substrate can be reduced, and cracks from the cut surface of the glass substrate can be suppressed.

[0208] Therefore, in this embodiment, a highly reliable through hole electrode substrate can be obtained.

[0209] Each configuration of the through electrode substrate in this embodiment is the same as that described in the above section "II. Second embodiment of through electrode substrate," and therefore description thereof will be omitted here.

[0210] IV. Fourth Embodiment of Through Electrode Substrate A fourth embodiment of the through electrode substrate in the present disclosure achieves the second object described above.

[0211] The through electrode substrate in this embodiment has a first surface and a second surface opposite the first surface, and includes a glass substrate having a through hole, a through electrode arranged in the through hole of the glass substrate, a first wiring laminate arranged on the first surface side of the glass substrate and having one or more first insulating layers and one or more first conductive layers electrically connected to the through electrode, and a second wiring laminate arranged on the second surface side of the glass substrate and having one or more second insulating layers and one or more second conductive layers electrically connected to the through electrode, and an end of the glass substrate has a flat portion, a first curved surface portion connecting the first surface and the flat portion, and a second curved surface portion connecting the second surface and the flat portion, the flat portion being exposed, the first curved surface portion being covered by the first wiring laminate, and the second curved surface portion being covered by the second wiring laminate.

[0212] It should be noted that the through electrode substrate in this embodiment does not include a multi-faceted through electrode substrate.

[0213] 14( a) is a schematic cross-sectional view illustrating a through electrode substrate in this embodiment. As shown in Fig. 14( a), the through electrode substrate 1C includes a glass substrate 2 having a first surface 2a and a second surface 2b opposing the first surface 2a, a first wiring stack 4A disposed on the first surface 2a side of the glass substrate 2, and a second wiring stack 14A disposed on the second surface 2b side of the glass substrate 2. Note that in Fig. 14( a), the through holes and through electrodes of the glass substrate 2, the layer structure of the first wiring stack 4A, and the layer structure of the second wiring stack 14A are omitted. The end of the glass substrate 2 has a flat portion 24c, a first curved surface portion 24a connecting the flat portion 24c and the first surface 2a, and a second curved surface portion 24b connecting the flat portion 24c and the second surface 2b, with the flat portion 24c exposed, the first curved surface portion 24a covered with the first wiring laminate 4A, and the second curved surface portion 24b covered with the second wiring laminate 14A.

[0214] The through electrode substrate 1C shown in Figure 14(a) is obtained by cutting the multi-sided assembly 1B of the through electrode substrate as shown in Figure 12(a) along the first cutting grooves 22 and the second cutting grooves 23 to separate the pieces. Figure 12(a) has been described above in "II. Second embodiment of the through electrode substrate" and will be described later in "D. Multi-sided assembly of the through electrode substrate," so a description thereof will be omitted here. In the through electrode substrate 1C, the cut surface of the glass substrate 2 is exposed at the end of the glass substrate 2, and first curved surface portions 24a originating from the corners of the openings of the first cutting grooves are covered with the first wiring laminate 4A, and second curved surface portions 24b originating from the corners of the openings of the second cutting grooves are covered with the second wiring laminate 14A. That is, the end of the glass substrate 2 has a flat portion 24c which is the cut surface, a first curved surface portion 24a which connects the flat portion 24c and the first surface 2a, and a second curved surface portion 24b which connects the flat portion 24c and the second surface 2b, and the flat portion 24c is exposed, the first curved surface portion 24a is covered with the first wiring laminate 4A, and the second curved surface portion 24b is covered with the second wiring laminate 14A.

[0215] Generally, the manufacture of a through-hole electrode substrate is performed by using a large insulating substrate and forming multiple electrodes. When cutting a multi-sided through-hole electrode substrate into individual pieces, grooves are not usually formed in advance in the glass substrate along the planned cutting lines before forming an insulating layer and a conductive layer on the glass substrate. Furthermore, grooves are not usually formed in advance in the glass substrate along the planned cutting lines and the corners of the groove openings are not rounded before forming an insulating layer and a conductive layer on the glass substrate. Therefore, when cutting a multi-sided through-hole electrode substrate into individual pieces, the corners of the cut surface of the glass substrate are not rounded.

[0216] It is also possible to form an insulating layer and a conductive layer on the glass substrate after chamfering the glass substrate. However, as shown in Figure 14(a), when forming a first insulating layer on the first surface 2a of the glass substrate 2, it is not usually formed so as to cover only the first curved surface portion 24a of the end of the glass substrate 2. Similarly, as shown in Figure 14(a), when forming a second insulating layer on the second surface 2b of the glass substrate 2, it is not usually formed so as to cover only the twelfth surface portion 24b of the end of the glass substrate 2.

[0217] 14( a), when the flat portion 24c is exposed, the first curved surface portion 24a is covered with the first wiring laminate 4A, and the second curved surface portion 24b is covered with the second wiring laminate 14A at the end of the glass substrate 2, it can be presumed that the polyhedral assembly 1B of the through electrode substrate as shown in FIG. 12( a) has been cut and separated along the first cutting groove 22 and the second cutting groove 23. In this case, as described in "D. Polyhedral assembly of the through electrode substrate" below, the corners 22a of the openings of the first cutting groove 22 and the corners 23a of the openings of the second cutting groove 23 are rounded, and thus, when the polyhedral assembly 1B of the through electrode substrate is cut along the first cutting groove 22 and the second cutting groove 23, stress concentration at the corners 22a of the openings of the first cutting groove 22 and the corners 23a of the openings of the second cutting groove 23 can be suppressed. This makes it possible to prevent cracks from occurring on the cut surface of the glass substrate, and to prevent breakage from occurring at the cut surface of the glass substrate, thereby making it possible to obtain a highly reliable through hole electrode substrate.

[0218] Each configuration of the through electrode substrate in this embodiment is the same as that described in the above section "II. Second embodiment of through electrode substrate," and therefore description thereof will be omitted here.

[0219] V. Fifth Embodiment of Through Electrode Substrate A fifth embodiment of the through electrode substrate in the present disclosure achieves the second object described above.

[0220] The through electrode substrate in this embodiment has a first surface and a second surface opposite to the first surface, and includes a glass substrate having a through hole, a through electrode arranged in the through hole of the glass substrate, a first wiring laminate arranged on the first surface side of the glass substrate and having one or more first insulating layers and one or more first conductive layers electrically connected to the through electrode, and a second wiring laminate arranged on the second surface side of the glass substrate and having one or more second insulating layers and one or more second conductive layers electrically connected to the through electrode, and the end of the glass substrate has a flat portion, a first curved portion connecting the first surface and the flat portion, and a second curved portion connecting the second surface and the flat portion, and the flat portion, the first curved portion, and the second curved portion are exposed.

[0221] It should be noted that the through electrode substrate in this embodiment does not include a multi-faceted through electrode substrate.

[0222] 14(b) is a schematic cross-sectional view illustrating a through-hole electrode substrate according to this embodiment. As shown in FIG. 14(b), the through-hole electrode substrate 1C includes a glass substrate 2 having a first surface 2a and a second surface 2b opposite the first surface 2a, a first wiring stack 4A disposed on the first surface 2a side of the glass substrate 2, and a second wiring stack 14A disposed on the second surface 2b side of the glass substrate 2. Note that FIG. 14(a) omits the through holes and through-hole electrodes of the glass substrate 2, the layer structure of the first wiring stack 4A, and the layer structure of the second wiring stack 14A. The end of the glass substrate 2 includes a flat portion 24c, a first curved surface portion 24a connecting the flat portion 24c and the first surface 2a, and a second curved surface portion 24b connecting the flat portion 24c and the second surface 2b. The flat portion 24c, the first curved surface portion 24a, and the second curved surface portion 24b are exposed.

[0223] The through-hole electrode substrate 1C shown in Figure 14(b) is obtained by cutting the multi-faceted through-hole electrode substrate body 1B shown in Figure 12(b) along the first cutting groove 22 and the second cutting groove 23 to separate the body. Figure 12(b) is described above in "II. Second embodiment of through-hole electrode substrate" and will be described later in "D. Multi-faceted through-hole electrode substrate body," so a description thereof will be omitted here. In the through-hole electrode substrate 1C, the cut surface of the glass substrate 2 is exposed at the end of the glass substrate 2, and a first curved surface portion 24a derived from the corner of the opening of the first cutting groove and a second curved surface portion 24b derived from the corner of the opening of the second cutting groove are also exposed. That is, the end of the glass substrate 2 has a flat portion 24c which is the cut surface, a first curved surface portion 24a which connects the flat portion 24c and the first surface 2a, and a second curved surface portion 24b which connects the flat portion 24c and the second surface 2b, and the flat portion 24c, the first curved surface portion 24a and the second curved surface portion 24b are exposed.

[0224] In the above case, as described below in "D. Polyhedral Body of Through Electrode Substrate," the corners 22a of the openings of the first cutting grooves 22 are rounded, and the corners 23a of the openings of the second cutting grooves 23 are rounded. This prevents stress from concentrating on the corners 22a of the first cutting grooves 22 and the corners 23a of the second cutting grooves 23 when cutting the polyhedral body 1B of the through electrode substrate along the first cutting grooves 22 and the second cutting grooves 23. This prevents cracks from occurring on the cut surface of the glass substrate, and prevents breakage from occurring at the cut surface of the glass substrate. Therefore, a highly reliable through electrode substrate can be obtained.

[0225] Each configuration of the through electrode substrate in this embodiment is the same as that described in the above section "II. Second embodiment of through electrode substrate," and therefore description thereof will be omitted here.

[0226] VI. Sixth Embodiment of Through Hole Electrode Substrate A sixth embodiment of the through hole electrode substrate in the present disclosure achieves the second object described above.

[0227] The through electrode substrate in this embodiment has a first surface and a second surface opposite to the first surface, and comprises a glass substrate having a through hole, and a through electrode arranged in the through hole of the glass substrate, wherein the glass substrate has a first cutting groove arranged on the first surface and a second cutting groove arranged on the second surface, and the corners of the opening of the first cutting groove are rounded, and the corners of the opening of the second cutting groove are rounded.

[0228] The through electrode substrate in this embodiment is a multi-surfaced body. Figures 12(a) and 12(b) are schematic cross-sectional views illustrating the through electrode substrate in this embodiment. As shown in Figures 12(a) and 12(b), the multi-surfaced body 1B of the through electrode substrate includes a glass substrate 2 having a first surface 2a and a second surface 2b opposite the first surface 2a, and through electrodes (not shown) disposed in through holes in the glass substrate 2. The glass substrate 2 has a first cutting groove 22 on the first surface 2a and a second cutting groove 23 on the second surface 2b along a planned cutting line 21. Furthermore, the corners 22a of the openings of the first cutting groove 22 are rounded, and the corners 23a of the openings of the second cutting groove 23 are rounded. Furthermore, the multi-surface assembly 1B of the through electrode substrate may have a first wiring laminate 4A arranged on the first surface 2a side of the glass substrate 2, or may have a second wiring laminate 14A arranged on the second surface 2b side of the glass substrate 2. Note that in Figures 12(a) and 12(b), the through holes and through electrodes of the glass substrate 2, the layer structure of the first wiring laminate 4A, and the layer structure of the second wiring laminate 14A are omitted.

[0229] In this embodiment, the corners 22a of the openings of the first cutting grooves 22 are rounded, and the corners 23a of the openings of the second cutting grooves 23 are rounded. This prevents stress from concentrating on the corners 22a of the openings of the first cutting grooves 22 and the corners 23a of the openings of the second cutting grooves 23 when the multi-faceted body 1B of the through electrode substrate is cut along the first cutting grooves 22 and the second cutting grooves 23. This prevents cracks from occurring on the cut surfaces of the glass substrate when the multi-faceted body of the through electrode substrate is cut into individual pieces, thereby preventing breakage from occurring at the cut surfaces of the glass substrate. Therefore, a highly reliable through electrode substrate can be obtained.

[0230] Each configuration of the through electrode substrate in this embodiment is the same as that described in the above section "II. Second embodiment of through electrode substrate," and therefore description thereof will be omitted here.

[0231] VII. Seventh Embodiment of Through Electrode Substrate A seventh embodiment of a through electrode substrate in the present disclosure achieves the second object described above.

[0232] The through electrode substrate in this embodiment has a first surface and a second surface opposite to the first surface, and comprises a glass substrate having a through hole, and a through electrode arranged in the through hole of the glass substrate, wherein an end of the glass substrate has a chamfered portion, and the chamfered portion has a curved surface.

[0233] FIG. 15( c) is a schematic cross-sectional view illustrating a through electrode substrate according to this embodiment. As shown in FIG. 15( c), the through electrode substrate includes a glass substrate 2 and through electrodes (not shown) disposed in through holes of the glass substrate 2. The glass substrate 2 is chamfered, with the edge of the glass substrate 2 having a chamfered portion 25, and the chamfered portion 25 has a curved surface. Furthermore, the multi-surface mounting body 1B of the through electrode substrate may include a first wiring stack 4A disposed on the first surface 2a of the glass substrate 2, or a second wiring stack 14A disposed on the second surface 2b of the glass substrate 2. Note that the through holes and through electrodes of the glass substrate 2, the layer structure of the first wiring stack 4A, and the layer structure of the second wiring stack 14A are omitted from FIG. 15( c).

[0234] In this embodiment, the edge of the glass substrate has a chamfered portion, and the chamfered portion is curved, which can prevent cracks from occurring at the edge of the glass substrate and can prevent breakage from occurring at the edge of the glass substrate, thereby providing a highly reliable through hole electrode substrate.

[0235] Each configuration of the through electrode substrate in this embodiment is the same as that described in the above section "II. Second embodiment of through electrode substrate," and therefore description thereof will be omitted here.

[0236] B. Through-hole electrode substrate with element A through-hole electrode substrate with element in the present disclosure includes the through-hole electrode substrate described above and an element mounted on the first wiring stack in the through-hole electrode substrate.

[0237] 21 is a schematic cross-sectional view showing an example of an element-equipped through electrode substrate according to the present disclosure. As shown in Fig. 21, the element-equipped through electrode substrate 30 includes the above-described through electrode substrate 1A, a first bonding portion 32 electrically connected to the element connection pad portion 11 of the through electrode substrate 1A, and an element 31 electrically connected to the first bonding portion 32.

[0238] The element-equipped through hole electrode substrate according to the present disclosure has the above-described through hole electrode substrate, and therefore cracks from the end face of the glass substrate can be suppressed, thereby improving reliability.

[0239] Hereinafter, the element-equipped through hole electrode substrate according to the present disclosure will be described for each configuration.

[0240] 1. Through electrode substrate The through electrode substrate has been described in detail in the second to fifth and seventh embodiments of "A. Through electrode substrate" above, so a description thereof will be omitted here. Note that the through electrode substrate is not a multi-surface body.

[0241] 2. Elements Examples of elements include active elements such as ICs, transistors, and diodes, and passive elements such as resistors, capacitors, and inductors. Other examples of elements include IC chips, LSI chips, and MEMS chips.

[0242] The element is mounted on the element connection pad of the through-hole electrode substrate via a first bonding portion. A bonding portion generally used for mounting elements can be used as the first bonding portion. Examples of materials for the first bonding portion include solder, gold or gold alloy, conductive paste, anisotropic conductive paste, and anisotropic conductive film.

[0243] Furthermore, an underfill resin portion may be disposed by filling an underfill resin between the through electrode substrate and the element, or the element may be sealed with a mold resin, so that the mold resin portion is disposed to cover the element.

[0244] C. Semiconductor Device The semiconductor device in the present disclosure has two embodiments.

[0245] I. First Embodiment of Semiconductor Device A semiconductor device in this embodiment has the through electrode substrate described above and an element mounted on the through electrode substrate.

[0246] 22 is a schematic cross-sectional view showing an example of a semiconductor device according to the present embodiment. As shown in FIG. 22 , a semiconductor device 40 includes the through hole electrode substrate 1, a first bonding portion 32 electrically connected to the first conductive layer 5 b (pad portion) of the through hole electrode substrate 1, and an element 31 electrically connected to the first bonding portion 32.

[0247] 23 is a schematic cross-sectional view showing another example of a semiconductor device according to the present embodiment. As shown in FIG. 23 , a semiconductor device 40 includes the through hole electrode substrate 1 described above, a first bonding portion 32 electrically connected to the first conductive layer 5 b (pad portion) of the through hole electrode substrate 1, an element 31 electrically connected to the first bonding portion 32, a second bonding portion 33 electrically connected to the second conductive layer 15 (pad portion) of the through hole electrode substrate 1, and a wiring substrate 50 electrically connected to the second bonding portion 33.

[0248] The semiconductor device of this embodiment has the through electrode substrate described above, and therefore can improve connection reliability and durability.

[0249] Hereinafter, the semiconductor device according to this embodiment will be described for each of its components.

[0250] 1. Through Electrode Substrate The through electrode substrate has been described in detail above in the section "A. Through Electrode Substrate I. First Embodiment of Through Electrode Substrate," so a description thereof will be omitted here.

[0251] 2. Elements The elements are the same as those described above in the section on elements in the substrate for through electrodes.

[0252] 3. Wiring Substrate In this embodiment, a general wiring substrate can be used as the wiring substrate. The wiring substrate is electrically connected to the pad portion of the through electrode substrate via a second bonding portion. The material of the second bonding portion is the same as the material of the first bonding portion.

[0253] 4. Applications The applications of the semiconductor device of this embodiment are not particularly limited, and examples thereof include notebook personal computers, tablet terminals, mobile phones, smartphones, digital video cameras, digital cameras, digital clocks, and servers.

[0254] II. Second Embodiment of Semiconductor Device A semiconductor device in this embodiment includes the above-described element-equipped through electrode substrate, a joint portion electrically connected to the second wiring stack in the through electrode substrate, and a wiring substrate electrically connected to the joint portion.

[0255] 24 is a schematic cross-sectional view showing an example of a semiconductor device according to the present embodiment. As shown in Fig. 24, a semiconductor device 40 includes the through electrode substrate 1A described above, a first bonding portion 32 electrically connected to the element connection pad portion 11 of the through electrode substrate 1A, an element 31 electrically connected to the first bonding portion 32, a second bonding portion 33 electrically connected to the wiring board connection pad 12 of the through electrode substrate 1A, and a wiring board 50 electrically connected to the second bonding portion 33.

[0256] The semiconductor device of this embodiment has the above-described element-equipped through electrode substrate, and therefore can have improved reliability.

[0257] Hereinafter, the semiconductor device according to this embodiment will be described for each of its components.

[0258] 1. Element-Attached Through Electrode Substrate The element-attached through electrode substrate has been described in detail above in "B. Element-Attached Through Electrode Substrate," and therefore a detailed description thereof will be omitted here.

[0259] 2. Wiring Board and First Bonding Portion As the wiring board in this embodiment, a general wiring board can be used.

[0260] The wiring board is electrically connected to the wiring board connection pads of the through electrode substrate via second bonding portions, which are made of the same material as the first bonding portion.

[0261] 3. Uses Uses of the semiconductor device are the same as those described in the first embodiment of the semiconductor device.

[0262] D. Multi-sided Mounted Body of Through-hole Electrode Substrate A multi-sided mounted body of through-hole electrode substrate in the present disclosure includes: a glass substrate having a first surface and a second surface opposite the first surface and having through holes; through-hole electrodes disposed in the through holes of the glass substrate; a first wiring laminate disposed on the first surface side of the glass substrate and having one or more first insulating layers and one or more first conductive layers electrically connected to the through-hole electrodes; and a second wiring laminate disposed on the second surface side of the glass substrate and having one or more second insulating layers and one or more second conductive layers electrically connected to the through-hole electrodes, wherein the glass substrate has first cutting grooves disposed on the first surface and second cutting grooves disposed on the second surface, and corners of openings of the first cutting grooves are rounded, and corners of openings of the second cutting grooves are rounded.

[0263] 12(a) and 12(b) are schematic cross-sectional views illustrating a multi-surface assembly of through-hole electrode substrates according to the present disclosure. As shown in FIGS. 12(a) and 12(b), a multi-surface assembly 1B of through-hole electrode substrates includes a glass substrate 2 having a first surface 2a and a second surface 2b opposite the first surface 2a, a first wiring stack 4A disposed on the first surface 2a side of the glass substrate 2, and a second wiring stack 14A disposed on the second surface 2b side of the glass substrate 2. Note that in FIGS. 12(a) and 12(b), the through holes and through electrodes of the glass substrate 2, the layer structure of the first wiring stack 4A, and the layer structure of the second wiring stack 14A are omitted. The glass substrate 2 has a first cutting groove 22 on the first surface 2a and a second cutting groove 23 on the second surface 2b along a planned cutting line 21. The corners 22a of the opening of the first cutting groove 22 are rounded, and the corners 23a of the opening of the second cutting groove 23 are rounded.

[0264] In the present disclosure, by rounding the corners 22a of the openings of the first cutting grooves 22 and rounding the corners 23a of the openings of the second cutting grooves 23, when the multi-faceted body 1B of the through electrode substrate is cut along the first cutting grooves 22 and the second cutting grooves 23, it is possible to suppress stress concentration at the corners 22a of the openings of the first cutting grooves 22 and the corners 23a of the openings of the second cutting grooves 23. As a result, when the multi-faceted body of the through electrode substrate is cut into individual pieces, it is possible to suppress cracks from occurring on the cut surface of the glass substrate, and it is possible to suppress breakage from the cut surface of the glass substrate. Therefore, a highly reliable through electrode substrate can be obtained.

[0265] The configurations of the multi-sided mounting body of the through electrode substrate in the present disclosure are the same as those described in the above section "A. Through electrode substrate II. Second embodiment of the through electrode substrate," so explanations here will be omitted.

[0266] E. Substrate for Through Electrode A substrate for through electrodes according to the present disclosure includes a substrate having a first surface and a second surface opposing the first surface, the substrate having a through hole, the through hole having a first opening located on the first surface side and a second opening located on the second surface side, and an end of the first opening and an end of the second opening having a curved surface.

[0267] 25 is a schematic cross-sectional view showing an example of a through electrode substrate according to the present disclosure. As shown in FIG. 25, a through electrode substrate 60 has a first surface 60a and a second surface 60b opposite to the first surface 60a, and has a through hole 60h. The through hole 60h has a first opening located on the first surface 60a side and a second opening located on the second surface 60b side, and an end E1 of the first opening and an end E2 of the second opening each have a curved surface.

[0268] The through electrode substrate according to the present disclosure is used for the through electrode substrate described above. The through electrode substrate according to the present disclosure achieves the effects described in the first embodiment of "A. Through electrode substrate" above.

[0269] The through electrode substrate in the present disclosure is similar to the substrate in the first embodiment of the through electrode substrate described above, and therefore a description thereof will be omitted here.

[0270] F. Glass Substrate The glass substrate according to the present disclosure has a through hole, a first cutting groove disposed on a first surface, and a second cutting groove disposed on a second surface, with the corners of the openings of the first cutting grooves being rounded, and the corners of the openings of the second cutting grooves being rounded.

[0271] 13 is a schematic cross-sectional view illustrating a glass substrate according to the present disclosure. As shown in FIG. 13, the glass substrate 2 has a through hole 2c, a first cutting groove 22 disposed on the first surface 2a, and a second cutting groove 23 disposed on the second surface 2b. Corners 22a of the openings of the first cutting grooves 22 are rounded, and corners 23a of the openings of the second cutting grooves 23 are rounded.

[0272] The glass substrate of the present disclosure is used to manufacture the above-mentioned multi-sided through-hole electrode substrate. Since the glass substrate 2 has rounded corners 22a of the openings of the first cutting grooves 22 and rounded corners 23a of the openings of the second cutting grooves 23, when the multi-sided through-hole electrode substrate is manufactured using the glass substrate 2 and the multi-sided through-hole electrode substrate is cut along the first cutting grooves 22 and the second cutting grooves 23, stress concentration at the corners 22a of the openings of the first cutting grooves 22 and the corners 23a of the openings of the second cutting grooves 23 can be suppressed. This suppresses cracks from occurring on the cut surfaces of the glass substrate when the multi-sided through-hole electrode substrate is cut into individual pieces, thereby suppressing breakage from the cut surfaces of the glass substrate. Therefore, a highly reliable through-hole electrode substrate can be obtained.

[0273] The respective configurations of the glass substrate in the present disclosure are the same as those described in the above section "A. Through electrode substrate II. Second embodiment of through electrode substrate 4. Glass substrate," and therefore will not be described here.

[0274] The present disclosure is not limited to the above-described embodiments. The above-described embodiments are merely examples, and any configuration that is substantially identical to the technical idea described in the claims of the present disclosure and that provides similar effects is included within the technical scope of the present disclosure.

[0275] Example 1 and Comparative Example 1 Example 1 is an example corresponding to the first embodiment of the through electrode substrate.

[0276] Stress was calculated by simulation for the through electrode substrate model shown in FIGS. 26 and 27. In the through electrode substrate model, the substrate 2A having the first through hole was a glass substrate, and the through electrode 3 was a conformal via made of copper. In addition, two-dimensional axial symmetry and 1 / 2 symmetry were assumed in the through electrode substrate model. For the glass, it was assumed that the glass was elastic, with a Young's modulus of 73.6 GPa, a Poisson's ratio of 0.23, and a thermal expansion coefficient of 3.2 ppm / °C. For copper, with reference to International Publication No. 2020 / 163067, it was assumed that copper had elastically perfect plastic properties and temperature-dependent yield stress, with a Young's modulus of 121 GPa, a Poisson's ratio of 0.35, and a thermal expansion coefficient of 17 ppm / °C. In addition, the through electrode model was assumed to be in a stress-free state at 22°C. In the simulation, the temperature was increased from 22°C to 350°C, and the maximum principal stress at the end of the opening of the first through hole at 350°C was calculated.

[0277] Fig. 28 shows the relationship between the radius of curvature R of the curved surface at the end of the opening of the first through hole and the maximum principal stress. As shown in Fig. 28, when the end of the opening of the first through hole has a curved surface, that is, when the radius of curvature of the curved surface is greater than 0, the maximum principal stress is significantly reduced, confirming that stress is alleviated.

[0278] Example 2 and Comparative Example 2 Example 2 is an example corresponding to the second embodiment of the through electrode substrate.

[0279] (1) Fabrication of a Semiconductor Device A glass substrate having a thermal expansion coefficient of 3.25 ppm / °C and a thickness of 400 μm was used as the glass substrate. First, a through hole was formed in the glass substrate. Furthermore, a first cutting groove and a second cutting groove were formed on the first and second surfaces of the glass substrate, respectively. The first cutting groove and the second cutting groove were formed so that the corners of the openings of the first cutting groove and the second cutting groove were rounded, respectively. Next, a through electrode was formed in the through hole in the glass substrate. Next, a first wiring laminate having a first insulating layer containing a polyimide resin, a first conductive layer, and a first via was formed on the first surface of the glass substrate. The number of layers of the first insulating layer was 8, 4, or 3. Similarly, a second wiring laminate having a second insulating layer containing a polyimide resin, a second conductive layer, and a second via was formed on the second surface of the glass substrate. The number of layers of the second insulating layer was 8, 4, or 3. In this case, the first wiring laminate was formed over the entire first surface of the glass substrate, and the second wiring laminate was formed over the entire second surface of the glass substrate. This resulted in a multi-sided assembly of through-hole electrode substrates. Next, the multi-sided assembly of through-hole electrode substrates was cut along the first and second cutting grooves in the glass substrate to separate them. Next, elements were mounted on the through-hole electrode substrates. Furthermore, a glass epoxy substrate (thermal expansion coefficient 12 ppm / °C) and a motherboard with a wiring pattern were used as the wiring substrate. Next, the through-hole electrode substrates and the motherboard were connected.

[0280] The method for measuring the Young's modulus of the insulating layer is as described above. A KLA Corporation iNano InForce50 type apparatus was used to measure the Young's modulus. For the examples and comparative examples, stress F1 was calculated using the above formula (1), and stress F2 was calculated using the above formula (2). Since the material of each first insulating layer was the same, stress F1 calculated using the above formula (1) was calculated using the following formula (1-1). Furthermore, since the material of each second insulating layer was the same and the material of the second insulating layer was the same as the material of the first insulating layer, stress F2 was assumed to be equal to stress F1. F1 = E × Δα × ΔT × h (1-1) In the above formula (1-1), E is the Young's modulus of the first insulating layer, Δα is the thermal expansion coefficient α of the first insulating layer and the thermal expansion coefficient α of the glass substrate. ＧΔT is 170° C., and h is the total thickness of each first insulating layer.

[0281] (2) Evaluation The reliability of the multi-faceted through-hole electrode substrate and the semiconductor device was evaluated according to the following criteria. The results are shown in Tables 1 and 2. Table 1 shows data obtained when the Young's modulus of the insulating layer was changed. Table 2 shows data obtained when the thickness of the insulating layer was changed.

[0282] <Evaluation criteria> A: In the semiconductor device, there was no cracking from the edge of the glass substrate (back cracking). B: When the multi-faceted body of the through electrode substrate was cut into individual pieces, there was no cracking from the edge of the glass substrate (back cracking), but due to the small number of insulating layers, it was somewhat difficult to route the wiring. C: When the multi-faceted body of the through electrode substrate was cut into individual pieces, there was no cracking from the edge of the glass substrate (back cracking), but poor ball mounting occurred when connecting the through electrode substrate to the motherboard. D: When the multi-faceted body of the through electrode substrate was cut into individual pieces, there was a cracking from the edge of the glass substrate (back cracking).

[0283]

[0284]

[0285] As shown in Tables 1 and 2, it was confirmed that the reliability was good when the stresses F1 and F2 were equal to or less than predetermined values ​​and the Young's modulus of the insulating layer was equal to or greater than a predetermined value.

[0286] The present disclosure provides the following inventions: [1-1] A through electrode substrate having a glass substrate having a first surface and a second surface opposite to the first surface and having a through hole, a through electrode arranged in the through hole of the glass substrate, a first wiring laminate arranged on the first surface side of the glass substrate and having one or more first insulating layers and one or more first conductive layers electrically connected to the through electrode, and a second wiring laminate arranged on the second surface side of the glass substrate and having one or more second insulating layers and one or more second conductive layers electrically connected to the through electrode, wherein in the first wiring laminate, the Young's modulus of the ith first insulating layer from the glass substrate side (i=1 to m, m is the number of first insulating layers included in the first wiring laminate) is defined as E ｉ (MPa), and the difference between the thermal expansion coefficient of the i-th first insulating layer and the thermal expansion coefficient of the glass substrate is Δα ｉ ( / °C), and the temperature change during the formation of the i-th first insulating layer is ΔT ｉ (°C), the thickness of the i-th first insulating layer is h ｉ (mm), the stress F1 calculated by the following formula (1) is 13.4 MPa or less, and in the second wiring laminate, the Young's modulus of the k-th (k=1 to n, n is the number of the second insulating layers included in the second wiring laminate) second insulating layer from the glass substrate side is E ｋ (MPa), and the difference between the thermal expansion coefficient of the k-th second insulating layer and the thermal expansion coefficient of the glass substrate is Δα ｋ ( / °C), and the temperature change during the formation of the kth second insulating layer is ΔT ｋ (°C), the thickness of the kth second insulating layer is h ｋ (mm), a stress F2 calculated by the following formula (2) is 13.4 MPa or less, the Young's modulus of the first insulating layer is 0.10 GPa or more, and the Young's modulus of the second insulating layer is 0.10 GPa or more.

[0287]

[0288] [1] A through electrode substrate having a glass substrate having a first surface and a second surface opposite to the first surface and having a through hole; a through electrode arranged in the through hole of the glass substrate; and a first wiring laminate arranged on the first surface side of the glass substrate and having one or more first insulating layers and one or more first conductive layers electrically connected to the through electrode, wherein in the first wiring laminate, the Young's modulus of the ith first insulating layer from the glass substrate side (i=1 to m, m is the number of the first insulating layers included in the first wiring laminate) is defined as E ｉ (MPa), and the difference between the thermal expansion coefficient of the i-th first insulating layer and the thermal expansion coefficient of the glass substrate is Δα ｉ ( / °C), and the temperature change during the formation of the i-th first insulating layer is ΔT ｉ (°C), the thickness of the i-th first insulating layer is h ｉ (mm), a stress F1 calculated by the following formula (1) is 13.4 MPa or less, and the Young's modulus of the first insulating layer is 0.10 GPa or more.

[0289]

[0290] [2] A second wiring laminate is provided on the second surface side of the glass substrate, and has one or more second insulating layers and one or more second conductive layers electrically connected to the through electrodes, and in the second wiring laminate, the Young's modulus of the k-th (k=1 to n, n is the number of the second insulating layers included in the second wiring laminate) second insulating layer from the glass substrate side is defined as E ｋ (MPa), and the difference between the thermal expansion coefficient of the k-th second insulating layer and the thermal expansion coefficient of the glass substrate is Δα ｋ ( / °C), and the temperature change during the formation of the kth second insulating layer is ΔT ｋ (°C), the thickness of the kth second insulating layer is h ｋ (mm), a stress F2 calculated by the following formula (2) is 13.4 MPa or less, and the Young's modulus of the second insulating layer is 0.10 GPa or more.

[0291]

[0292] [3] The through-hole electrode substrate according to [2], wherein the number of layers of the first insulating layer included in the first wiring laminate is four or more, and the number of layers of the second insulating layer included in the second wiring laminate is four or more. [4] The through-hole electrode substrate according to any of [1] to [3], wherein the glass substrate has first cutting grooves arranged on the first surface and second cutting grooves arranged on the second surface, and corners of the openings of the first cutting grooves are rounded, and corners of the openings of the second cutting grooves are rounded. [5] The through-hole electrode substrate according to any of [2] to [4], wherein the first wiring laminate is arranged in a region on the first surface of the glass substrate other than the first cutting grooves, and the second wiring laminate is arranged in a region on the second surface of the glass substrate other than the second cutting grooves. [6] The through hole electrode substrate according to any one of [2] to [5], wherein the first wiring stack is disposed over the entire surface of the first surface of the glass substrate, and the second wiring stack is disposed over the entire surface of the second surface of the glass substrate. [7] The through hole electrode substrate according to any one of [1] to [6], wherein an end of the glass substrate has a chamfered portion. [8] The through hole electrode substrate according to [7], wherein the chamfered portion has a curved surface. [9] The through hole electrode substrate according to any one of [2] to [8], wherein the end of the glass substrate is covered with at least one of one or more first insulating layers and one or more second insulating layers.

[10] A through hole electrode substrate with an element, comprising: the through hole electrode substrate according to any one of [1] to [9]; and an element mounted on the first wiring stack in the through hole electrode substrate.

[11] A semiconductor device comprising: the through hole electrode substrate with an element according to

[10] ; a joint electrically connected to the second wiring stack in the through hole electrode substrate; and the wiring substrate electrically connected to the joint.

[12] A through electrode substrate comprising: a glass substrate having a first surface and a second surface opposite to the first surface and having a through hole; and a through electrode arranged in the through hole of the glass substrate, wherein the glass substrate has a first cutting groove arranged on the first surface and a second cutting groove arranged on the second surface, and corners of the opening of the first cutting groove are rounded, and corners of the opening of the second cutting groove are rounded.

[13] A through-electrode substrate comprising: a glass substrate having a first surface and a second surface opposite to the first surface and having a through hole; and a through-electrode disposed in the through-hole of the glass substrate, wherein an end of the glass substrate has a chamfered portion, and the chamfered portion has a curved surface.

[14] A through-electrode substrate comprising: a substrate having a first surface and a second surface opposite to the first surface and having a first through-hole; and a through-electrode disposed in the first through-hole, wherein the first through-hole has a first opening located on the first surface side and a second opening located on the second surface side, and an end of the first opening and an end of the second opening have curved surfaces.

[15] The through-electrode substrate according to

[14] , wherein the substrate is a glass substrate.

[16] The through-electrode substrate according to

[14] or

[15] , comprising: a first covering insulating layer disposed on the first surface side of the substrate so as to cover at least the boundary between the through-electrode and the substrate, and having a second through-hole connecting to the first through-hole.

[17] The through-hole electrode substrate according to

[16] , wherein the cross-sectional shape of the second through-hole in the thickness direction of the first covering insulating layer is an inverted tapered shape.

[18] The through-hole electrode substrate according to

[16] or

[17] , wherein the end of the opening of the second through-hole on the surface of the first covering insulating layer opposite to the substrate has a curved surface.

[19] The through-hole electrode substrate according to any of

[16] to

[18] , wherein the through-hole electrode substrate has a second covering insulating layer on the second surface side of the substrate, the second covering insulating layer being arranged so as to cover at least the boundary between the through-hole electrode and the substrate, and having a third through-hole connecting to the first through-hole.

[20] A semiconductor device comprising: the through-hole electrode substrate according to any of

[14] to

[19] ; ​​and an element mounted on the through-hole electrode substrate.

[21] A substrate for a through electrode, comprising: a substrate having a first surface and a second surface opposite to the first surface, the substrate having a through hole, the through hole having a first opening located on the first surface side and a second opening located on the second surface side, and an end of the first opening and an end of the second opening having a curved surface.

[22] The substrate for a through electrode according to

[21] , wherein the substrate is a glass substrate.

[0293] REFERENCE SIGNS LIST 1, 1A, 1C, 1D... through electrode substrate 2A... substrate 2... glass substrate 2a... first surface of substrate 2b... second surface of substrate 2c... through hole 2h... first through hole 3... through electrode 4... first insulating layer 4A... first wiring laminate 5... first conductive layer 6... first via 7... first interlayer insulating layer 8... first conductive portion 9... second conductive portion 10... via 11... element connection pad portion 12... wiring substrate connection pad portion 14... second insulating layer 14A... second wiring laminate 15... second conductive layer 16... second via 30... element-attached through electrode substrate 31... element 32... first bonding portion 33... second bonding portion 40... semiconductor device 41... first covering insulating layer 41c... opening 41h... second through hole 42... Second covering insulating layer 42c... Opening 42h... Third through hole 50... Wiring substrate 60... Substrate for through electrode 60a... First surface of substrate for through electrode 60b... Second surface of substrate for through electrode 60h... Through hole

Claims

1. A through electrode substrate having a glass substrate having a first surface and a second surface opposite to the first surface and having a through hole; a through electrode arranged in the through hole of the glass substrate; and a first wiring laminate arranged on the first surface side of the glass substrate and having one or more first insulating layers and one or more first conductive layers electrically connected to the through electrode, wherein the Young's modulus of the ith first insulating layer (i=1 to m, m is the number of first insulating layers included in the first wiring laminate) from the glass substrate side in the first wiring laminate is defined as E ｉ (MPa), and the difference between the thermal expansion coefficient of the i-th first insulating layer and the thermal expansion coefficient of the glass substrate is Δα ｉ ( / °C), and the temperature change during the formation of the i-th first insulating layer is ΔT ｉ (°C), the thickness of the i-th first insulating layer is h ｉ (mm), a stress F1 calculated by the following formula (1) is 13.4 MPa or less, and the Young's modulus of the first insulating layer is 0.10 GPa or more.

2. A second wiring laminate is disposed on the second surface side of the glass substrate and has one or more second insulating layers and one or more second conductive layers electrically connected to the through electrodes, and in the second wiring laminate, the Young's modulus of the kth (k=1 to n, n is the number of the second insulating layers included in the second wiring laminate) second insulating layer from the glass substrate side is defined as E ｋ (MPa), and the difference between the thermal expansion coefficient of the k-th second insulating layer and the thermal expansion coefficient of the glass substrate is Δα ｋ ( / °C), and the temperature change during the formation of the kth second insulating layer is ΔT ｋ (°C), the thickness of the kth second insulating layer is h ｋ 2. The through hole electrode substrate according to claim 1, wherein a stress F2 calculated by the following formula (2) is 13.4 MPa or less when the thickness of the through hole electrode is 1.0 mm, and a Young's modulus of the second insulating layer is 0.10 GPa or more.

3. The through electrode substrate according to claim 2, wherein the number of layers of the first insulating layer included in the first wiring stack is four or more, and the number of layers of the second insulating layer included in the second wiring stack is four or more.

4. The through electrode substrate according to claim 1, wherein the glass substrate has a first cutting groove disposed on the first surface and a second cutting groove disposed on the second surface, and the corners of the openings of the first cutting grooves are rounded, and the corners of the openings of the second cutting grooves are rounded.

5. The through electrode substrate according to claim 4, wherein the first wiring stack is arranged in an area other than the first cutting groove on the first surface of the glass substrate, and the second wiring stack is arranged in an area other than the second cutting groove on the second surface of the glass substrate.

6. The through-hole electrode substrate according to claim 4, wherein the first wiring stack is disposed over the entire first surface of the glass substrate, and the second wiring stack is disposed over the entire second surface of the glass substrate.

7. The through hole electrode substrate according to claim 1, wherein the edge of the glass substrate has a chamfered portion.

8. The through hole electrode substrate according to claim 7, wherein the chamfered portion has a curved surface.

9. The through-hole electrode substrate according to claim 2, wherein an edge of the glass substrate is covered with at least one of the first insulating layer or layers and the second insulating layer or layers.

10. A through electrode substrate with an element, comprising: a through electrode substrate according to any one of claims 1 to 9; and an element mounted on the first wiring stack in the through electrode substrate.

11. A semiconductor device comprising: a through-hole electrode substrate with an element according to claim 10; a joint portion electrically connected to the second wiring stack in the through-hole electrode substrate; and the wiring substrate electrically connected to the joint portion.

12. A through electrode substrate comprising: a glass substrate having a first surface and a second surface opposite to the first surface, the glass substrate having a through hole; and a through electrode arranged in the through hole of the glass substrate, wherein the glass substrate has a first cutting groove arranged on the first surface and a second cutting groove arranged on the second surface, and the corners of the opening of the first cutting groove are rounded, and the corners of the opening of the second cutting groove are rounded.

13. A through electrode substrate comprising: a glass substrate having a first surface and a second surface opposite to the first surface, the glass substrate having a through hole; and a through electrode disposed in the through hole of the glass substrate, wherein an end of the glass substrate has a chamfered portion, and the chamfered portion has a curved surface.

14. A through electrode substrate comprising: a substrate having a first surface and a second surface opposite the first surface, the substrate having a first through hole; and a through electrode arranged in the first through hole, the first through hole having a first opening located on the first surface side and a second opening located on the second surface side, and an end of the first opening and an end of the second opening having a curved surface.

15. The through-hole electrode substrate according to claim 14, wherein the substrate is a glass substrate.

16. A through electrode substrate according to claim 14, having a first covering insulating layer disposed on the first surface side of the substrate so as to cover at least the boundary between the through electrode and the substrate, and having a second through hole connected to the first through hole.

17. The through-hole electrode substrate according to claim 16, wherein the cross-sectional shape of the second through-hole in the thickness direction of the first covering insulating layer is an inverted tapered shape.

18. The through-hole electrode substrate according to claim 16, wherein the end of the opening of the second through-hole on the surface of the first covering insulating layer opposite the substrate has a curved surface.

19. A through electrode substrate as described in claim 16, having a second covering insulating layer arranged on the second surface side of the substrate so as to cover at least the boundary between the through electrode and the substrate, and having a third through hole connecting to the first through hole.

20. A semiconductor device comprising: a through-hole electrode substrate according to any one of claims 14 to 19; and an element mounted on the through-hole electrode substrate.

21. A substrate for through electrodes, comprising a substrate having a first surface and a second surface opposite to the first surface, the substrate having a through hole, the through hole having a first opening located on the first surface side and a second opening located on the second surface side, and an end of the first opening and an end of the second opening having a curved surface.

22. The through electrode substrate according to claim 21, wherein the substrate is a glass substrate.

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