Hybrid resistor with oriented hybrid insulation layers

Abstract

The present disclosure provides a resistor comprising a region of increased resistance, the increased resistance derived from an inclusion of a hybrid material, wherein the hybrid material comprises a base material and hybrid insulation, and wherein at least a portion of the hybrid insulation, whether layers or particulates, is oriented perpendicular to a current path through the resistor. The resistor may further comprise a series of pillars and traces integrated into semiconductor packaging. In some cases, the base material of the hybrid material may be selected from Constantan, a magnetic alloy, or copper. At least a portion of the hybrid insulation may be oriented parallel to the current path through the resistor to reduce eddy currents.

Description

[0001] HYBRID RESISTOR WITH ORIENTED HYBRID INSULATION LAYERS

[0002] FIELD OF INVENTION

[0003] [0001.] The present disclosure relates to resistors for electrical systems, and more particularly to resistors incorporating specialized materials and structures for improved performance in compact form factors.

[0004] BACKGROUND

[0005] [0002.] Shunt resistors are widely used in electrical systems to measure current by creating a voltage drop proportional to the current passing through them. This voltage drop can be measured to calculate the current using Ohm's law (I = V / R). While the principle is straightforward, designing accurate shunt resistors presents several challenges, particularly for high-frequency applications.

[0006] [0003.] One challenge is the sensitivity of shunt resistors to frequency changes. At higher frequencies, parasitic inductance can distort the relationship between the voltage drop and the actual current in the system. This makes it difficult to accurately measure the current using a simple Ohm’s law calculation.

[0007] [0004.] Another consideration is heat dissipation. Resistors generate heat as they dissipate power, which can affect their performance and efficiency. The ability to remove heat effectively may limit the overall efficiency of the resistor. This is why resistors often have large surface areas, and some power resistors are directly connected to heat sinks.

[0008] [0005.] The electronics industry continually pushes for higher frequencies and smaller component sizes. However, shrinking resistors while maintaining or improving performance presents significant challenges. Smaller resistors in high-frequency systems can generate more heat relative to their size, which can alter their performance characteristics.

[0009] [0006.] Balancing factors such as frequency response, temperature stability, and size reduction is complex. For example, extremely small shunt resistors, even those designed to provide minimal resistance, can still experience substantial heating in high-frequency applications. This heating can alter the resistor's properties, making precise current measurements difficult. [0007.] One can prevent higher temperatures by providing more surface area for the heat to dissipate over. However, simply increasing the size of an electrical component stands against industry-wide goals of shrinking electrical components. It would be quite simple to downsize a resistor except that to downsize, performance is lost. As the industry also wants better perfomiance, it becomes untenable to significantly sacrifice performance to reduce size. Thus, shrinking a resistor takes innovation.

[0010] [0008.] There is a need for a small, precise shunt resistor which may be practically utilized as a shunt, power, or other resistor. It would be beneficial if this shunt resistor was able to shrink down to a level where it can be composed of traces and pillars and embedded in multi-layer packaging while remaining relatively unaffected by frequency changes, higher frequency currents, and temperature changes.

[0011] SUMMARY

[0012] [0009.] According to an aspect of the present disclosure, a resistor is provided. The resistor includes a region of increased resistance, the increased resistance derived from an inclusion of a hybrid material. The hybrid material comprises a base material and hybrid insulation layers. At least a portion of the hybrid insulation layers are oriented perpendicular to a current path through the resistor.

[0013] [0010.] The hybrid material allows for precise control of the resistance and the ability to generate large resistances in small areas. In various embodiments, the hybrid insulation layers in the hybrid insulation layer can be built up from one insulation layer until there is effectively perfect resistance in a resistor. This allows for a large range of possible resistance. Because the hybrid insulation layers are small and do not take up much space, adding thousands of layers does not push the minimum size of the inductor beyond sizes suitable for multi-layer packaging.

[0014] [0011.] According to other aspects of the present disclosure, the resistor may include one or more of the following features. The resistor may further comprise a series of pillars and traces integrated into semiconductor packaging. The semiconductor packaging may be epoxy build-up film. The base material of the hybrid material may be a conductive material or a magnetic material. In some cases, the base material may be selected from the group consisting of: Constantan, a nickel-iron alloy, and copper. Examples of nickel-iron alloys include: 36 / 64 nickel-iron, 40 / 60 nickel-iron, and invar. At least a portion of the hybrid insulation layers may be oriented parallel to the current path through the resistor. The hybrid insulation layers oriented parallel to the current path may be configured to reduce eddy currents in the resistor. [0012.] According to another aspect of the present disclosure, a method of forming a resistor is provided. The method includes forming a region of increased resistance within the resistor by including a hybrid material. The hybrid material comprises a base material and hybrid insulation layers. At least a portion of the hybrid insulation layers are oriented perpendicular to a current path through the resistor.

[0015] [0013.] According to other aspects of the present disclosure, the method may include one or more of the following features. Forming the region of increased resistance may comprise electroplating the base material and depositing the hybrid insulation layers using combustion chemical vapor deposition. The method may further comprise forming a series of pillars and traces integrated into semiconductor packaging. The semiconductor packaging may comprise epoxy build-up film. The base material of the hybrid material may be a conductive material or a magnetic material. In some cases, the base material may be selected from the group consisting of: Constantan, a nickel-iron alloy, and copper. The nickel-iron alloy may be selected from the group consisting of: 36 / 64 nickel-iron, 40 / 60 nickel-iron, and invar. The method may further comprise orienting at least a portion of the hybrid insulation layers parallel to the current path through the resistor to reduce eddy currents in the resistor.

[0016] [0014.] According to another aspect of the present disclosure, a semiconductor package is provided. The semiconductor package includes a resistor embedded within the semiconductor package. The resistor comprises a region of increased resistance derived from an inclusion of a hybrid material. The hybrid material comprises a base material and hybrid insulation layers. At least a portion of the hybrid insulation layers are oriented perpendicular to a current path through the resistor.

[0017] [0015.] According to other aspects of the present disclosure, the semiconductor package may include one or more of the following features. The resistor may further comprise a series of conductive pillars and conductive traces integrated into the semiconductor package. The semiconductor package may comprise epoxy build-up film.

[0018] BRIEF DESCRIPTION OF FIGURES

[0019] [0016.]Non-limiting and non-exhaustive examples are described with reference to the following figures.

[0020] [0017.] FIG. 1 illustrates a cross-sectional view of a resistor structure, according to aspects of the present disclosure.

[0021] [0018.] FIG. 2 shows a cross-sectional view of a current pathway through hybrid insulation layers, according to an embodiment. [0019.] FIG. 3 depicts a perspective view of a resistor structure with current pathways through hybrid material regions, according to aspects of the present disclosure.

[0022] [0020.] FIG. 4 illustrates a cross-sectional view of a resistor structure with hybrid material, according to an embodiment.

[0023] [0021.] FIG. 5 shows a cross-sectional view of a resistor structure integrated into semiconductor packaging, according to aspects of the present disclosure.

[0024] [0022.] FIG. 6 depicts a circuit diagram of multiple hybrid resistors arranged in series, according to an embodiment.

[0025] [0023.] FIG. 7 illustrates a resistor configuration with multiple resistors arranged in series, according to aspects of the present disclosure.

[0026] DETAILED DESCRIPTION

[0027] [0024.] The present invention relates to resistors with improved performance characteristics. In particular, the invention describes a hybrid resistor that incorporates a region of increased resistance derived from the inclusion of a hybrid material. This hybrid material comprises a base material and hybrid insulation layers, which may be oriented in specific directions relative to the current path through the resistor.

[0028] [0025.] The hybrid resistor described herein offers advantages over conventional resistors in terms of size, precision, and versatility. By utilizing a hybrid material with oriented hybrid insulation layers (hybrid insulation layers), the resistor may achieve higher resistance values within a smaller form factor. This allows for the creation of compact resistors suitable for integration into semiconductor packaging and other space-constrained applications.

[0029] [0026.] In some cases, the hybrid resistor may function as both a power resistor and a shunt resistor. The ability to serve multiple puiposes in a single component may reduce the overall number of components needed in certain electrical systems. The hybrid material structure allows for precise control of resistance characteristics, which may be beneficial for accurate current measurement in shunt resistor applications.

[0030] [0027.] The orientation of the hybrid insulation layers within the hybrid material may be tailored to optimize performance for specific applications. For example, hybrid insulation layers oriented perpendicular to the current path may increase overall resistance, while layers oriented parallel to the current path may help mitigate unwanted effects such as eddy currents in alternating current systems. [0028.] By utilizing strategic insulation layer orientations, the hybrid resistor may offer improved stability across a range of operating conditions, including variations in temperature and frequency. This stability may enhance the reliability and accuracy of electrical systems incorporating these resistors.

[0031] [0029.] It is worth noting that a hybrid material with insulation layers may best pictured as a single, solid piece of metal built up one ultra-thin layer at a time. After each metallic layer is deposited, a very thin, intentionally porous insulation layer is laid on top; the insulation layer covers almost all the surface but leaves microscopic pinholes. When the next metallic layer is deposited, metal grows down through those pinholes and welds itself to the layer below, so the entire stack turns into one continuous conductor. The finished structure behaves electrically like a bulk metal bar, yet the embedded porous insulation interrupts eddy currents and tailor skin-depth in ways that ordinary laminates cannot.

[0032] [0030.] Stated more formally, in at least one embodiment of the present invention a Hybrid Material - as used herein, denotes a monolithic conductive body formed by the successive deposition of (i) an electrically conductive metallic stratum and (ii) a deliberately porous electrically insulating stratum in such a way that, during deposition of the next metallic stratum, metal penetrates the porosity and metallurgically bonds to the underlying conductor across substantially the entire interfacial area. The resulting body behaves electrically as a single conductor characterised by a unitary skin-depth and a strongly anisotropic (directiondependent) impedance profile. Because continuity between conductive strata is created in situ through the pores of the insulating stratum, the process can be completed without a subsequent step — such as drilling, laser-ablating, etching or photo-patterning — to open discrete holes or vias. In fact, any structure that attains interlayer conductivity only by post-deposition apertures constitutes a laminate and is expressly excluded from this definition in this application.

[0033] [0031.] It is also possible to form a hybrid material with a heterogeneous or heterogenous mixture of a base material, by forming the base material of the hybrid magnetic material while also depositing the hybrid insulation. The result is particles of hybrid insulation which are interspersed, often randomly, throughout the base material, serving as miniature hybrid insulation layers.

[0034] [0032.] Further, in at least one embodiment of the present invention, a hybrid insulation layer - designates the specific porous dielectric strata that appear within a hybrid material. Each layer (a) possesses a bulk resistivity of at least 500 p£2-cm (e.g., SiCh, AI2O3 or ZrCT); (b) is 10 nm to 5 pm thick, preferably 30- 250 nm when deposited by AP-PECVD or combustion CVD; (c) covers 90-99.99 % of the underlying metal while leaving a statistically distributed network of through-voids having individual lateral dimensions < 40 pm and an overall open-area fraction of 0.01-10 %; and (d) is sufficiently permeable that the underlying metal can act directly as the electrode (or catalyst) for depositing the next metallic stratum without seed activation, drilling or via formation. Once back-filled with metal the layer becomes mechanically interlocked with adjoining conductors and cannot be peeled away as a discrete film, further distinguishing it from the dense dielectric sheets used in traditional laminates.

[0035] [0033.] The resistor structure of the present invention may be integrated into semiconductor packaging. FIG. 1 illustrates a cross-sectional view of an exemplary resistor structure. The resistor structure may include a first terminal 101 and a second terminal 102. A primary current path 103 may flow between the first terminal 101 and the second terminal 102.

[0036] [0034.] It is worth noting that the primary current crosses the hybrid insulation layers. Here the insulation layers are not targeted towards eddy currents as that would decrease resistance, but instead target the primary current.

[0037] [0035.] Thus, in some cases, the resistor may comprise a region of increased resistance derived from the inclusion of a hybrid material. This region of increased resistance may be implemented using a first hybrid trace 121 and a second hybrid trace 122. The first hybrid trace 121 and the second hybrid trace 122 may be positioned perpendicular to the current path 103, as shown in FIG. 1.

[0038] [0036.] The resistor structure may be integrated into semiconductor packaging using a series of conductive pillars and conductive traces. FIG. 3 provides a perspective view of such an arrangement. A conductive pillar 110 may be positioned at the outer portions of the device. A conductive trace 120 may extend between and connect to the first hybrid frace 121 and the second hybrid trace 122, creating electrical pathways within the structure.

[0039] [0037.] In some cases, the semiconductor packaging may comprise epoxy build-up film. The use of epoxy build-up film may allow for the creation of a compact resistor suitable for integration into space-constrained applications.

[0040] [0038.] The arrangement of conductive pillars 110, conductive traces 120, and hybrid traces 121, 122 may form a connected network within the semiconductor package. This configuration may enable current flow through the structure while passing through the regions of increased resistance provided by the hybrid material in the first hybrid trace 121 and the second hybrid trace 122.

[0041] [0039.] By utilizing this structure, the resistor may achieve higher resistance values within a smaller form factor compared to conventional resistors. The integration of the resistor into semiconductor packaging using pillars and traces may allow for efficient use of space and improved thermal management. [0040.] The resistor may include a hybrid material 301. In some cases, the hybrid material 301 may comprise a base material and hybrid insulation layers. FIG. 5, for example, illustrates a cross-sectional view of a resistor structure incorporating regions of hybrid material 301.

[0042] [0041.] The base material of the hybrid material 301 may be selected from various conductive materials. In some cases, the base material may be Constantan. Constantan may provide stable resistance characteristics over a wide temperature range, which may be beneficial for maintaining consistent resistor performance across different operating conditions.

[0043] [0042.] In some other cases, the base material may be a nickel-iron alloy. The nickel-iron alloy could be selected from 36 / 64 nickel-iron, 40 / 60 nickel-iron, or invar. These nickel- iron alloys may offer different electrical and thermal properties, allowing for customization of the resistor characteristics based on specific application requirements.

[0044] [0043.] Copper may also be used as the base material in some implementations of the hybrid material 301. Copper may provide high electrical conductivity, which may be advantageous in certain resistor designs. It is worth noting that other conductive materials may be used to form alternate embodiments of the present invention, including cobalt alloy, silver, gold, or some other combination of materials..

[0045] [0044.] The hybrid insulation layers within the hybrid material 301 may create regions of increased resistance. FIG. 4 shows a cross-sectional view of a resistor structure with hybrid material 301 incorporated in alignment with the cunent path. The hybrid insulation layers may contain voids that allow the base material to connect through these voids. This structure may create a complex current path through the hybrid material 301, contributing, and even reducing to the overall resistance of the resistor, if desired. This can be used to control heat dissipation by region or to slightly reduce the resistance as needed if, for example, existing hybrid insulation in a perpendicular orientation is too strong. It is worth noting that although shown in the vertical, in some cases, the parallel hybrid insulation layers 302 may be placed horizontally in horizontal areas of the trace.

[0046] [0045.] The arrangement of the hybrid material 301 relative to the conductive pillars 110 and conductive traces 120 may influence the resistor's electrical characteristics. In some cases, the hybrid material 301 may interface with both the conductive pillars 110 and the conductive traces 120, as shown in FIG. 4.

[0047] [0046.] The composition and structure of the hybrid material 301 may allow for precise control of resistance characteristics within a compact form factor. This may enable the creation of resistors suitable for integration into semiconductor packaging while maintaining desired electrical properties. [0047.] The hybrid material 301 may include hybrid insulation layers that contribute to the increased resistance of the resistor. FIG. 2 illustrates a cross-sectional view of these hybrid insulation layers and their pores’ interaction with current flow.

[0048] [0048.] The hybrid insulation layers may contain voids that allow for some current flow through the insulation. A current path 104 may flow between the first insulation layer 201 and the second insulation layer 202, as indicated by the curved line in FIG. 2. This current path 104 may represent how electrical current navigates through the pores or voids in the hybrid insulation layers.

[0049] [0049.] The arrangement of the hybrid insulation layers may create a complex path for current flow, increasing the overall resistance of the resistor. The layering of insulation may provide strong resistance to currents flowing perpendicular to the layers, while still allowing some current to pass through the voids.

[0050] [0050.] In some cases, the voids within the hybrid insulation layers may be randomized in size and placement. This randomization may reduce the likelihood of straight or short paths for current through the insulation, further contributing to the resistor's overall resistance.

[0051] [0051.] In some cases it is controlling the thickness, number, and orientation of the layers that is the primary means to control the resistivity of the resistors. Because the insulation layers may be so thin, adding or removing a single layer provides a precise means of controlling the resistivity of the resistor. It is also worth noting that the number of traces and pillars may be modified to accommodate various patterns of hybrid materials.

[0052] [0052.] The hybrid insulation layers may be built up from a single layer to multiple layers. By increasing the number of layers, the resistance of the resistor may be increased. In some cases, a large number of layers may be added to achieve very high resistance values.

[0053] [0053.] The formation of the hybrid insulation layers may involve specific manufacturing processes. In some cases, the hybrid insulation layers may be deposited using combustion chemical vapor deposition. This process may allow for precise control over the thickness and composition of the hybrid insulation layers.

[0054] [0054.] The resistor incorporating the hybrid material 301 with its hybrid insulation layers may be formed using a combination of manufacturing techniques. In some cases, the base material of the hybrid material 301 may be deposited using electroplating. The hybrid insulation layers may then be added using combustion chemical vapor deposition.

[0055] [0055.] The combination of electroplating for the base material and combustion chemical vapor deposition for the hybrid insulation layers may allow for the creation of a resistor with precisely controlled resistance characteristics. This manufacturing approach may enable the production of resistors with high resistance values in a compact form factor suitable for integration into semiconductor packaging.

[0056] [0056.] The hybrid material may include hybrid insulation layers oriented in different directions relative to the current path through the resistor. In some cases, at least a portion of the hybrid insulation layers may be oriented perpendicular to the current path through the resistor. This perpendicular orientation may increase the overall resistance of the resistor.

[0057] [0057.] The perpendicular orientation of the hybrid insulation layers may provide strong resistance to current flow while still allowing some current to pass through the voids. This configuration may enable precise control of the resistor's resistance characteristics within a compact form factor.

[0058] [0058.] In some cases, at least a portion of the hybrid insulation layers may be oriented parallel to the current path through the resistor. This parallel orientation may offer different benefits compared to the perpendicular orientation. For alternating current (AC) applications, the parallel orientation of hybrid insulation layers may be configured to reduce eddy currents in the resistor.

[0059] [0059.] The combination of perpendicular and parallel insulation layer orientations may allow for optimization of resistor performance for different types of currents. For direct current (DC) and AC applications, the perpendicular orientation may be more effective at increasing resistance. For AC applications, the parallel orientation may help mitigate unwanted effects such as eddy currents.

[0060] [0060.] The arrangement of hybrid insulation layers in multiple orientations may provide flexibility in resistor design. By adjusting the proportion and placement of perpendicular and parallel hybrid insulation layers, the resistor's characteristics may be tailored for specific applications and current types.

[0061] [0061.] The resistor structure of the present invention may be implemented in configurations involving multiple resistors. FIG. 6 illustrates a circuit diagram showing multiple hybrid resistors arranged in series. The diagram depicts a first hybrid resistor 601, a second hybrid resistor 602, and a third hybrid resistor 603 connected sequentially through a semiconductor plastic 630.

[0062] [0062.] In some cases, multiple resistors may be operably connected in series to increase total resistance. The arrangement shown in FIG. 6 allows for the combination of resistance values from each individual hybrid resistor. This configuration may enable the creation of higher overall resistance values while maintaining the benefits of the hybrid material construction in each resistor.

[0063] [0063.] The first hybrid resistor 601 may be connected to the second hybrid resistor 602, which in turn may be connected to the third hybrid resistor 603. The semiconductor plastic 630 may provide electrical connectivity between these components. The hybrid resistors may be arranged in a linear configuration, allowing the current path to flow through the series arrangement.

[0064] [0064.] Each hybrid resistor may incorporate regions with the hybrid material, including hybrid insulation layers. The arrangement of the hybrid material within each resistor may vary. For example, the first hybrid resistor 601 may have hybrid material concentrated in its upper portion, while the second hybrid resistor 602 and the third hybrid resistor 603 may have different distributions of hybrid material.

[0065] [0065.] FIG. 7 illustrates another resistor configuration comprising multiple resistors arranged in series. The diagram shows a first resistor 701, a second resistor 702, and a third resistor 703 connected sequentially along a horizontal axis. Each resistor may incoiporate hybrid material sections with hybrid insulation layers. The hybrid insulation may be arranged differently in each resistor.

[0066] [0066.] In some cases, the resistors in FIG. 7, for example, may be integrated into the semiconductor plastic 630. This integration may allow for a compact form factor suitable for semiconductor packaging applications. The arrangement may enable current to flow through the series of resistors, with each resistor contributing to the overall resistance of the system.

[0067] [0067.] The configuration of multiple resistors in series may offer advantages in terms of heat dissipation. By distributing the resistance across multiple components, the heat generated may be spread over a larger area. This distribution of heat may help prevent localized hot spots and improve overall thermal management of the resistor system.

[0068] [0068.] The use of multiple resistors in series may also allow for greater flexibility in achieving specific resistance values. By combining resistors with different characteristics, a wide range of total resistance values may be achieved. This flexibility may be beneficial in applications requiring precise resistance control or in situations where standard resistor values may not meet the exact requirements.

[0069] [0069.] In some cases, the individual resistors within the series configuration may incorporate different arrangements of the hybrid material. For example, one resistor may have hybrid insulation layers primarily oriented perpendicular to the current path, while another may have layers oriented parallel to the current path. This variation in hybrid material arrangement may allow for optimization of different resistor characteristics within the series configuration.

[0070] [0070.] The multiple resistor configurations described may provide a balance between achieving desired resistance characteristics and maintaining a compact form factor suitable for integration into semiconductor packaging. These arrangements may offer improved performance and versatility compared to single resistor implementations in certain applications. [0071.] The hybrid resistor may integrate various elements to achieve desired performance characteristics. The hybrid material, comprising a base material and hybrid insulation layers, may form a region of increased resistance within the resistor. This region of increased resistance may be created by electroplating the base material and incorporating hybrid insulation layers.

[0071] [0072.] In some cases, the hybrid material may contribute to the resistor's ability to maintain stable resistance over both temperature and frequency changes. The composition and arrangement of the hybrid material may allow for precise control of resistance characteristics within a compact fonn factor.

[0072] [0073.] The resistor may be integrated into semiconductor packaging using a series of pillars and traces. This integration may enable efficient use of space while maintaining desired electrical properties. The arrangement of pillars and traces may also contribute to heat dissipation within the compact form factor.

[0073] [0074.] In some cases, the resistor may be incorporated into packaging with additional layering or components, for example, elements configured to provide thermal insulation or improve heat dissipation. These thermal management features may help maintain consistent performance across different operating conditions.

[0074] [0075.] The hybrid resistor may be suitable for various applications, including use as a shunt resistor or a power resistor. In shunt resistor applications, the stable resistance characteristics may allow for accurate current measurement across a range of temperatures and frequencies. For power resistor applications, the compact form factor and heat dissipation capabilities may enable high power handling in space-constrained environments.

[0075] [0076.] The arrangement of hybrid insulation layers within the hybrid material may contribute to the resistor's performance in different applications. In some cases, the orientation of hybrid insulation layers relative to the current path may be optimized for specific current types, frequency ranges, or use cases.

[0076] [0077.] The integration of these various elements - hybrid material, hybrid insulation layers, pillars, traces, and thermal management features - may result in an integratable resistor with controllable resistance, frequency stability, and efficient heat dissipation in a compact package. This combination of characteristics may make the hybrid resistor suitable for a wide range of applications in modem electronic systems.

Claims

CLAIMS1. A resistor comprising: a region of increased resistance, the increased resistance derived from an inclusion of a hybrid material, wherein the hybrid material comprises a base material and hybrid insulation layers, and wherein at least a portion of the hybrid insulation layers are oriented perpendicular to a primary current path through the resistor.

2. The resistor of claim 1, wherein the resistor further comprises a series of pillars and traces integrated into semiconductor packaging.

3. The resistor of claim 2, wherein the semiconductor packaging is epoxy build-up film.

4. The resistor of claim 1, wherein the base material of the hybrid material is selected from the group consisting of: Constantan, a magnetic alloy, and copper.

5. The resistor of claim 4, wherein the magnetic alloy is a nickel-iron alloy.

6. The resistor of claim 1, wherein at least a portion of the hybrid insulation layers are oriented parallel to the current path through the resistor.

7. The resistor of claim 6, wherein the hybrid insulation layers oriented parallel to the current path are configured to reduce eddy currents in the resistor.

8. A method of forming a resistor, the method comprising: forming a region of increased resistance within the resistor by including a hybrid material, wherein the hybrid material comprises a base material and hybrid insulation layers, and wherein at least a portion of the hybrid insulation layers are oriented perpendicular to a primary current path through the resistor.

9. The method of claim 8, wherein forming the region of increased resistance comprises: electroplating the base material; and depositing the hybrid insulation layers using combustion chemical vapor deposition.

10. The method of claim 9, further comprising forming a series of pillars and traces integrated into semiconductor packaging.

11. The method of claim 10, wherein the semiconductor packaging comprises epoxy build-up film.

12. The method of claim 8, wherein the base material is selected from the group consisting of: Constantan, a magnetic alloy, and copper.

13. The method of claim 12, wherein the magnetic alloy is a nickel-iron alloy.

14. The method of claim 8, further comprising orienting at least a portion of the hybrid insulation layers parallel to the current path through the resistor to reduce eddy currents in the resistor.

15. A semiconductor package comprising: a resistor embedded within the semiconductor package, the resistor comprising a region of increased resistance derived from an inclusion of a hybrid material, wherein the hybrid material comprises a base material and hybrid insulation layers, and wherein at least a portion of the hybrid insulation layers are oriented perpendicular to a primary current path through the resistor.

16. The semiconductor package of claim 15, wherein the resistor further comprises a series of conductive pillars and conductive traces integrated into the semiconductor package.

17. The semiconductor package of claim 16, wherein the semiconductor package comprises epoxy build-up film.

18. The semiconductor package of claim 15, wherein the base material of the hybrid material is selected from the group consisting of: Constantan, a magnetic alloy, and copper.

19. The semiconductor package of claim 18, wherein the magnetic alloy is a nickel-iron alloy.

20. The semiconductor package of claim 15, wherein at least a portion of the hybrid insulation layers are oriented parallel to the current path through the resistor to reduce eddy currents in the resistor.

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