MEMS sensor and electronic atomization device

Abstract

A MEMS sensor (100) and an electronic atomization device (1000). The MEMS sensor (100) comprises a substrate (10), a base plate (20), a deformable material layer (30), a first electrically conductive contact (40), and a second electrically conductive contact (50), wherein the substrate (10) has a first surface (11) and a second surface (12) opposite to each other, the first surface (11) being provided with a recess (13), the second surface (12) being provided with a Wheatstone bridge circuit (14), and a bridge arm of the Wheatstone bridge circuit (14) comprising a varistor (140); the base plate (20) covers the recess (13) to form a sealed cavity; and the deformable material layer (30) is arranged in the sealed cavity, and is located on the bottom wall of the recess (13), and the deformable material layer (30) is configured to be deformable when energized, thereby applying to the bottom wall of the recess (13) an acting force that is towards or away from the base plate (20). In this way, when the substrate (10) is subjected to an external pressure, the deformable material layer (30) is energized to apply to the bottom wall of the recess (13) an acting force that is in a direction opposite to the external pressure, such that the resistance value of the bridge arm of the Wheatstone bridge circuit (14) has a good linear correlation, thereby improving the detection accuracy of the MEMS sensor (100).

Description

MEMS sensors and electronic atomization devices

[0001] This application claims priority to Chinese patent application No. 202410931269.5, filed on July 11, 2024, the entire contents of which are incorporated herein by reference. [Technical Field]

[0002] This application relates to the field of sensor technology, specifically to a MEMS sensor and an electronic atomization device. [Background Technology]

[0003] In recent years, with the rapid development of MEMS (Micro-Electro-Mechanical System) technology, it has been widely applied in the sensor field. Traditional MEMS piezoresistive pressure sensors, based on the piezoresistive effect of single-crystal silicon, typically use a Wheatstone bridge structure to convert external pressure signals into corresponding electrical signals. The magnitude of the external pressure signal can be determined by measuring the value of this electrical signal. However, this type of MEMS piezoresistive pressure sensor suffers from inaccurate detection. [Summary of the Invention]

[0004] This application provides a MEMS sensor and an electronic atomization device to solve the problem of inaccurate detection by MEMS sensors.

[0005] According to a first aspect of this application, some embodiments of this application provide a MEMS sensor, including a substrate, a base plate, a deformable material layer, a first conductive contact, and a second conductive contact; the substrate has opposing first and second surfaces; the first surface has a groove, and the second surface has a Wheatstone bridge circuit, the arms of the Wheatstone bridge circuit including varistors; the base plate covers the groove to form a sealed cavity; the deformable material layer is disposed in the sealed cavity and located on the bottom wall of the groove; the first conductive contact and the second conductive contact are disposed at intervals on the substrate and / or the base plate, and are electrically connected to the deformable material layer respectively; wherein the deformable material layer is configured to deform under energization, thereby applying a force toward or away from the base plate to the bottom wall of the groove.

[0006] In some embodiments, the deformable material layer is spaced apart from the substrate; the deformable material layer includes a thermally deformable material layer or an electro-deformable material layer.

[0007] In some embodiments, the thermo-deformable material layer or the electro-deformable material layer is conductive and electrically connected to the first conductive contact and the second conductive contact.

[0008] In some embodiments, the deformable material layer includes the thermo-deformable material layer and the conductive heating layer; the conductive heating layer is electrically connected to the first conductive contact and the second conductive contact, respectively.

[0009] In some embodiments, the conductive heating layer is stacked with the thermo-deformable material layer, or the conductive heating layer surrounds the thermo-deformable material layer.

[0010] In some embodiments, the deformable material layer includes a plurality of first sub-deformable material layers and a plurality of second sub-deformable material layers spaced apart; the plurality of first sub-deformable material layers and the plurality of second sub-deformable material layers are alternately arranged; the first sub-deformable material layers and the second sub-deformable material layers exert opposite directions of force on the bottom wall of the groove when energized, and are independently controlled by two different pairs of first conductive contacts and second conductive contacts.

[0011] In some embodiments, the deformable material layer is conductive and spaced apart from the substrate to serve as a first electrode plate; the MEMS sensor further includes a third conductive contact and a second electrode plate; the third conductive contact is disposed on the substrate and / or the substrate; the second electrode plate is disposed on the surface of the substrate exposed to the sealed cavity, spaced apart from the first electrode plate, and electrically connected to the third conductive contact; wherein the first electrode plate and the second electrode plate are configured to repel or attract each other when energized.

[0012] In some embodiments, the substrate has a first conductive hole and a second conductive hole; the first conductive contact is disposed on the surface of the substrate opposite to the substrate and is electrically connected to the deformable material layer through the first conductive hole, and the second conductive contact is disposed on the surface of the substrate opposite to the substrate and is electrically connected to the deformable material layer through the second conductive hole.

[0013] In some embodiments, the Wheatstone bridge circuit includes four sets of varistors that change resistance in response to pressure changes applied to the substrate, thereby converting the pressure signal into an electrical signal; the Wheatstone bridge circuit also includes four sets of conductive regions for leading out the electrical signal.

[0014] In some embodiments, the substrate is a semiconductor substrate; each group of varistors includes two parallel and spaced sub-varistors, and a heavily doped contact region formed between the sub-varistors, the heavily doped contact region being used to electrically connect the sub-varistors in the group of varistors.

[0015] In some embodiments, the varistor and the heavily doped contact region are formed on the substrate, which is also covered with a dielectric layer, and four sets of the conductive regions are formed on the dielectric layer.

[0016] In some embodiments, the side of the dielectric layer away from the substrate is also covered with a passivation layer, and the four sets of conductive regions are at least partially exposed to the passivation layer.

[0017] According to a second aspect of this application, some embodiments of this application provide an electronic atomization device, including a liquid storage unit, an atomization component, a MEMS sensor, a power supply, and a control circuit; the liquid storage unit is used to store an aerosol generation matrix, and the liquid storage unit has an aerosol inlet end and an outlet end; the atomization component is disposed on the airflow path from the inlet end to the outlet end, and is used to atomize the aerosol generation matrix; the MEMS sensor is the MEMS sensor provided in any of the above embodiments; the MEMS sensor is disposed on the airflow channel of the electronic atomization device, and is used to detect the air pressure change in the airflow channel; the power supply is used to provide voltage to the atomization component and the MEMS sensor; the control circuit is electrically connected to the power supply, the atomization component, and the MEMS sensor respectively; the control circuit is used to control the power supply to apply an electrical signal to the deformable material layer according to the amount of change in the output voltage of the MEMS sensor caused by the air pressure change in the airflow channel, so that the deformable material layer applies a force to the bottom wall of the groove, moving closer to or away from the substrate, so that the amount of change in the output voltage of the MEMS sensor is less than or equal to a preset threshold.

[0018] In some embodiments, the preset threshold is zero; the control circuit is also used to detect whether the change in the output voltage of the MEMS sensor is zero, and when the change in the output voltage of the MEMS sensor is detected to be zero, to determine the magnitude of the air pressure based on the electrical signal applied to the deformable material layer.

[0019] According to the MEMS sensor of the above embodiment, since the deformable material layer is configured to deform under energization, a force is applied to the bottom wall of the groove, either close to or away from the substrate. When the sensor substrate is subjected to pressure in the direction close to the substrate, energizing the deformable material layer causes it to deform away from the substrate, thereby applying a force away from the substrate to the bottom wall of the groove, thus counteracting the displacement of the strain film in the direction close to the substrate caused by changes such as airflow. When the sensor substrate is subjected to pressure away from the substrate, energizing the deformable material layer causes it to deform close to the substrate, thereby applying a force close to the substrate to the bottom wall of the groove, thus counteracting the displacement of the strain film in the direction away from the substrate caused by changes such as airflow. Therefore, during the use of the MEMS sensor, the deflection of the strain film is always small, thereby effectively improving the problem that the substrate deformation does not change ideally linearly with the pressure, thus improving the detection accuracy of the MEMS sensor of the embodiment. [Attached Image Description]

[0020] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 is a top view of a MEMS sensor provided in some embodiments of this application;

[0022] Figure 2 is a cross-sectional view along line II-II in Figure 1;

[0023] Figure 3 is a schematic diagram of the structure of a MEMS sensor provided in some other embodiments of this application;

[0024] Figure 4 is a schematic diagram of the bottom surface of the MEMS sensor in Figure 3;

[0025] Figure 5 is a schematic diagram of the structure of a MEMS sensor provided in some embodiments of this application;

[0026] Figure 6 is a schematic diagram of the structure of a MEMS sensor provided in some other embodiments of this application;

[0027] Figure 7 is a bottom view of the deformable material layer 30 in Figure 6;

[0028] Figure 8 is a schematic diagram of the structure of a MEMS sensor provided in some embodiments of this application;

[0029] Figure 9 is a bottom view of the deformable material layer 30 in Figure 8;

[0030] Figure 10 is a flowchart of a MEMS sensor fabrication method provided in some embodiments of this application;

[0031] Figure 11 is a flowchart of S10 in Figure 10;

[0032] Figure 12 is a flowchart of S30 in Figure 10;

[0033] Figure 13 is a flowchart of a MEMS sensor fabrication method provided in some other embodiments of this application;

[0034] Figure 14 is a schematic diagram of the structure of an electronic atomizing device provided in some embodiments of this application;

[0035] Figure 15 is a functional block diagram of the electronic atomizing device in Figure 14.

[0036] Reference numerals: 10-Substrate, 11-First surface, 12-Second surface, 13-Groove, 14-Wheatstone bridge circuit, 140-Varistor, 141- Sub-varistor, 142-conductive region, 143-heavily doped contact region, 144-conductive lead, 15-dielectric layer, 16-passivation layer; 20-substrate, 21-first conductive hole, 22-second conductive hole, 23-third conductive hole; 30-deformation material layer, 31-first lead, 32-second lead, 33-thermally deformable material layer, 34-conductive heating layer, 35-first sub-deformation material layer, 36-multiple second sub-deformation material layers; 40-first conductive contact; 50-second conductive contact; 60-third conductive contact; 70-second electrode plate; 80-first sealing ring; 90-second sealing ring; 100-MEMS sensor; 200-liquid storage component; 300-atomization component; 400-control circuit; 1000A-liquid storage unit, 1000B-control unit, 1000-electronic atomization device.

Detailed Implementation Methods

[0037] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of this application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing description of the drawings, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that comprises a series of steps or units is not limited to the steps or units listed, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to such processes, methods, products, or apparatus.

[0039] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0040] In the description of the embodiments of this application, the technical terms "first," "second," "third," etc., are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more (including two), such as two, three, etc., unless otherwise explicitly defined. Similarly, "multiple sets" refers to two or more sets (including two sets), and "multiple pieces" refers to two or more pieces (including two pieces).

[0041] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0042] In the description of the embodiments of this application, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicate the relative orientation or positional relationship between the components in a certain posture (as shown in the accompanying drawings) as shown in the drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application.

[0043] In the description of the embodiments of this application, unless otherwise expressly specified and limited, the technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0044] In recent years, with the rapid development of MEMS technology, it has been widely applied in the sensor field. Traditional MEMS sensors are based on the piezoresistive effect of single-crystal silicon and typically use a Wheatstone bridge structure to convert external pressure signals into corresponding electrical signals. The magnitude of the external pressure signal is obtained by measuring the value of this electrical signal.

[0045] However, the inventors of this application discovered through research that as the external pressure increases, the displacement (or "deformation") of the strain membrane in the sensor structure will not always exhibit an ideal linear change. This causes the resistance value of the bridge arm of the Wheatstone bridge to not always exhibit a linear change. In other words, the deflection of the strain membrane increases and the linearity deteriorates, which in turn leads to poor linearity of the test results. This type of MEMS sensor has the problem of inaccurate detection.

[0046] The inventors of this application use a deformable material layer to compensate for the deflection of the strain membrane, which effectively improves the problem that the deformation of the substrate does not change in an ideal linear manner with the pressure, thereby improving the detection accuracy of the MEMS sensor in the embodiment.

[0047] The present application will now be described in detail with reference to the accompanying drawings and embodiments.

[0048] Please refer to Figures 1 and 2. Figure 1 is a top view of a MEMS sensor provided in some embodiments of this application; Figure 2 is a cross-sectional view along line II-II in Figure 1.

[0049] The MEMS sensor 100 provided in this application embodiment includes a substrate 10, a base plate 20, a deformable material layer 30, a first conductive contact 40, and a second conductive contact 50.

[0050] In one embodiment, the substrate 10 can be made of silicon-based materials, such as a single-crystal silicon wafer. Single-crystal silicon wafers are a common substrate for semiconductor devices, on which metal layers can be deposited and metal ions can be doped to construct semiconductor devices. In another embodiment, the MEMS sensor 100 needs to have a rollable characteristic. In this case, polyacetamide (PI) can be used as the substrate 10, and a single-crystal silicon layer can be deposited on it to fabricate the rollable MEMS sensor 100. This application uses a semiconductor substrate 10 as an example for illustration.

[0051] In some embodiments, the substrate 10 has a first surface 11 and a second surface 12 opposite to each other, and the distance between the first surface 11 and the second surface 12 is the thickness of the substrate 10. The first surface 11 has a groove 13, the cross-sectional shape of which is not limited along the thickness direction of the substrate 10, and can be, for example, square, rectangular, or trapezoidal, etc., and this application does not impose any specific limitations on it. The second surface 12 has a Wheatstone bridge circuit 14, the bridge arms of which include varistors 140.

[0052] In some embodiments, referring to FIG1, the Wheatstone bridge circuit 14 includes four sets of varistors 140. The varistors 140 can generate resistance changes in response to pressure changes applied to the substrate 10, thereby converting pressure signals into electrical signals. Each set of varistors 140 includes two parallel and spaced-apart sub-varistors 141. In one embodiment, the four sets of varistors 140 are arranged in the same direction, for example, the X direction in FIG1, and distributed at the four corners of the rhombus shown in FIG1. ​​In another embodiment, the four sets of varistors 140 are arranged in different directions. For example, two sets of varistors 140 are arranged in the X direction in FIG1, and the other two sets of varistors 140 are arranged along the Y direction. Optionally, in yet another embodiment, the four sets of varistors 140 are arranged in a rectangle (not shown), and the four sets of varistors 140 are arranged in the same direction.

[0053] In some embodiments, the Wheatstone bridge circuit 14 further includes four sets of conductive regions 142 for leading out electrical signals. In one embodiment, as shown in FIG1, the four sets of varistors 140 are respectively arranged in the middle of the substrate 10, and the four conductive regions 142 are respectively arranged around the four sets of varistors 140. In another embodiment, the four sets of varistors 140 are respectively arranged at the four corners of the substrate 10 (not shown), and the four conductive regions 142 are arranged in the middle of the substrate 10.

[0054] Furthermore, in some embodiments, the Wheatstone bridge circuit 14 further includes heavily doped contact regions 143 formed between the sub-varistors 141. The heavily doped contact regions 143 are used to electrically connect the sub-varistors 141 in the group of varistors 140. The heavily doped contact regions 143 are regions with conductive properties after semiconductor doping with metal ions. In some embodiments, the varistors 140 and the heavily doped contact regions 143 are formed on a substrate 10. A dielectric layer 15 is also covered on the substrate 10. Four sets of conductive regions 142 are formed on the dielectric layer 15. The dielectric layer 15 can serve as a protective layer and an insulating layer. The dielectric layer can be made of silicon dioxide or silicon nitride, etc. The dielectric layer 15 may have vias. The conductive regions 142 and their conductive leads 144 can be electrically connected to the varistors 140 through the vias in the dielectric layer 15. Optionally, the conductive leads 144 are made of at least one of copper, nickel-chromium alloy, iron, or platinum. Optionally, in some embodiments, the side of the dielectric layer 15 away from the substrate 10 is further covered with a passivation layer 16, and the four sets of conductive regions 142 are at least partially exposed on the passivation layer 16. The passivation layer 16 has a dense surface that can be used to resist moisture erosion and device oxidation, etc. The passivation layer 16 has hollowed-out areas corresponding to the positions of the conductive regions 142, so that the conductive regions 142 are exposed to the external environment to facilitate the extraction of electrical signals.

[0055] In some embodiments, the substrate 20 may be a glass substrate or a ceramic substrate, etc., and the substrate 20 may cover the groove 13 to form a sealed cavity. In one embodiment, the substrate 20 may be bonded to the substrate 10 to form a sealed cavity. Exemplarily, in some embodiments, the substrate 20 and the substrate 10 may be bonded together using metallic chromium under preset temperature and / or preset pressure conditions. The specific preset temperature and pressure need to be determined according to the bonding material and the actual equipment used, and will not be specifically described here. Those skilled in the art can understand the concept of this embodiment based on the above description. In other embodiments, the substrate 20 may be directly bonded to the substrate 10.

[0056] Further, referring to Figures 2-4, in some embodiments, the substrate 20 has a first conductive hole 21 and a second conductive hole 22. A first conductive contact 40 is disposed on the surface of the substrate 20 away from the substrate 10 and is electrically connected to the deformable material layer 30 through the first conductive hole 21. A second conductive contact 50 is disposed on the surface of the substrate 20 away from the substrate 10 and is electrically connected to the deformable material layer 30 through the second conductive hole 22. Specifically, in one embodiment, a first lead 31 and a second lead 32 are connected to both sides of the deformable material layer 30. The first conductive hole 21 is used to lead out the first lead 31, and the second conductive hole 22 is used to lead out the second lead 32. The same material as the first lead 31 and the second lead 32 is deposited in the first conductive hole 21 and the second conductive hole 22, thereby forming the first conductive contact 40 and the second conductive contact 50. The first lead 31 and the second lead 32 can be connected to an external resistance sampling circuit through the first conductive contact 40 and the second conductive contact 50, thereby forming a detection loop for detecting the resistance of the deformable material layer 30. This embodiment enables electrical connection between the first conductive contact 40 and the second conductive contact 50 and the deformable material layer 30. The structure is simple and the fabrication method is quick. Optionally, in other embodiments, the first conductive hole 21, the second conductive hole 22, the first conductive contact 40, and the second conductive contact 50 may also be disposed on the substrate 10, or partially disposed on the substrate 10 with the remaining portion disposed on the substrate 20. This application does not impose specific limitations and can select according to needs. This embodiment uses the example of the first conductive hole 21, the second conductive hole 22, the first conductive contact 40, and the second conductive contact 50 being disposed on the substrate 20 for illustration.

[0057] In some embodiments, a deformable material layer 30 is disposed within a sealed cavity and located on the bottom wall of the groove 13. The deformable material layer 30 is configured to deform under energization, thereby applying a force to the bottom wall of the groove 13 towards or away from the substrate 20. In the embodiments of this application, the deformable material layer 30 refers to a material layer that can deform along a specific direction after being energized. In some embodiments, the deformable material layer 30 is spaced apart from the substrate 20. After being energized, the deformable material layer 30 can deform towards the substrate 20 and / or away from the substrate 20. In FIG. 2, the direction towards the substrate 20 can refer to a vertically downward direction, defined as the first direction, and the direction away from the substrate 20 can refer to a vertically upward direction, defined as the second direction. This will be used as an example in subsequent embodiments. For example, a bent deformable material layer 30 can extend in a direction parallel to the substrate 20 under energization, with the bulging portion moving vertically downward or upward, thereby applying a force to the bottom wall of the groove 13 towards or away from the substrate 20.

[0058] Optionally, in some embodiments, the deformable material layer 30 includes a thermo-deformable material layer or an electro-deformable material layer. A thermo-deformable material layer refers to a material layer that deforms upon heating. In some embodiments of this application, the thermo-deformable material layer can generate heat and deform upon the application of an electric current. In some embodiments, the material of the thermo-deformable material layer can be a metal such as platinum, nickel, or tungsten, or an electrothermal braking material (such as a polymer carbon nanotube composite material, a carbon nanotube layer and vanadium dioxide layer composite material), an electro-expanding ceramic (PZT), or an electro-shrinking composite material (SMA), etc. An electro-deformable material layer refers to a material layer that can deform under the action of an applied electric or magnetic field. Its material can include an electro-piezoelectric deformable material, such as an electro-piezoelectric deformable material (EDM) or an electro-piezoelectric composite material (ECM), or an electro-magnetically deformable material, such as an electromagnetically controlled insulator (EMIR), an electromagnetically controlled ferrite (EMM), or an electromagnetically controlled composite material (EMC), etc.

[0059] The pressure compensation principle of the MEMS sensor 100 in the above embodiments of this application is described below:

[0060] Strain membrane: The area of ​​the bottom wall of the sealed cavity projected along the second direction onto the substrate 10 together forms a strain membrane. In some embodiments, the strain membrane includes at least the substrate 10 and the deformation material layer 30.

[0061] When the strain membrane is subjected to pressure along the first direction, it also displaces along that direction. A DC voltage can be applied to both ends of the thermo-deformable material layer, causing the strain membrane to displace along the second direction due to the heating effect of the thermo-deformable material layer. Alternatively, a DC voltage can be applied to both ends of the electro-deformable material layer, causing it to stretch in a third direction perpendicular to the first direction due to the current. Since the electro-deformable material layer is suspended in the corresponding area of ​​the sealed cavity, when it stretches horizontally, a force along the second direction is generated in the suspended area, causing the strain membrane to displace along the second direction. This compensates for the strain membrane's deflection, reducing its deflection and minimizing its impact on the linearity of the test results. When the output voltage of the Wheatstone bridge circuit 14 is detected to be zero, meaning the pressure on the strain membrane in the first direction cancels out the deformation force after energization, the magnitude of the applied pressure along the first direction can be calculated based on the input voltage.

[0062] Optionally, when the strain membrane is subjected to pressure along the second direction, it also displaces along the second direction. In this case, a DC voltage can be applied to both ends of the thermo-deformable material layer, causing the strain membrane to displace along the first direction due to the heating effect of the thermo-deformable material layer. Alternatively, a DC voltage can be applied to both ends of the electro-deformable material layer, causing it to stretch in a third direction perpendicular to the first direction due to the energization. Since the electro-deformable material layer is suspended in the corresponding area of ​​the sealed cavity, when it stretches horizontally, a force along the first direction is generated in the suspended area, causing the strain membrane to displace along the first direction, thereby compensating for the strain membrane's deflection and reducing its impact on the linearity of the test results. When the output voltage of the Wheatstone bridge circuit 14 is detected to be zero, meaning the pressure in the second direction on the strain membrane cancels out the deformation force after energization, the magnitude of the applied pressure in the second direction can be calculated based on the input voltage.

[0063] In this embodiment, a deformable material layer 30 is provided on the bottom wall of the sealed cavity (i.e., the bottom wall of the groove 13). By compensating for the pressure inside and outside the sealed cavity, the external pressure is tested. The strain membrane has a small deflection and higher linearity. The pressure is tested by monitoring the moment when the output voltage of the Wheatstone bridge circuit 14 is zero. The pressure test can be visualized at the moment when the output voltage of the Wheatstone bridge circuit 14 is zero, which has higher sensitivity.

[0064] Optionally, in some embodiments, the thermo-deformable material layer or the electro-deformable material layer is conductive and electrically connected to the first conductive contact 40 and the second conductive contact 50. By making the thermo-deformable material layer or the electro-deformable material layer conductive, the thermo-deformable material layer or the electro-deformable material layer can be directly electrically connected to the first conductive contact 40 and the second conductive contact 50 without the need to set conductive elements on the thermo-deformable material layer or the electro-deformable material layer. Therefore, the MEMS sensor 100 of this application has a simple structure and is easy to fabricate.

[0065] Optionally, referring to Figures 5-7, in some embodiments, the deformable material layer 30 includes a thermo-deformable material layer 33 and a conductive heating layer 34; the conductive heating layer 34 is electrically connected to the first conductive contact 40 and the second conductive contact 50, respectively. The conductive heating layer 34 can be made of metal, carbon material, or polymer material; this application does not impose specific limitations on this. In the embodiments of this application, the conductive heating layer 34 generates heat after being energized through the first conductive contact 40 and the second conductive contact 50, and then transfers the heat to the thermo-deformable material layer 33 to cause it to deform. The thermo-deformable material layer can be an insulating material or a conductive material, allowing for a wider range of choices.

[0066] In some embodiments, as shown in Figure 5, the conductive heating layer 34 and the thermotropic material layer 33 are stacked. The conductive heating layer 34 can transfer heat from the contact surface to the thermotropic material layer 33; the larger the contact surface, the faster the heat transfer. In other embodiments, as shown in Figures 6 and 7, the conductive heating layer 34 surrounds the thermotropic material layer 33. The heat from the conductive heating layer 34 can be transferred inward from the circumference of the thermotropic material layer 33, which allows for more uniform heat transfer.

[0067] Optionally, in some embodiments, referring to Figures 8 and 9, the deformable material layer 30 includes a plurality of first sub-deformable material layers 35 and a plurality of second sub-deformable material layers 36 spaced apart; the plurality of first sub-deformable material layers 35 and the plurality of second sub-deformable material layers 36 are alternately arranged; the first sub-deformable material layers 35 and the second sub-deformable material layers 36 exert opposite directions of force on the bottom wall of the groove 13 when energized, and are independently controlled by two different pairs of first conductive contacts 40 and second conductive contacts 50. In some embodiments, the deformation direction of the first sub-deformable material layer 35 is along a first direction, so the direction of the force exerted on the bottom wall of the groove 13 when energized is also along the first direction, thereby causing the strain membrane to displace along the first direction; the deformation direction of the second sub-deformable material layer 36 is along a second direction, so the direction of the force exerted on the bottom wall of the groove 13 when energized is also along the second direction, thereby causing the strain membrane to displace along the second direction, and vice versa. With this setup, deformation compensation of the strain membrane under pressure in the first direction and pressure in the second direction can be achieved using only one layer of deformation material 30. The structure is simple, easy to operate, and can improve the accuracy of the MEMS sensor 100, thereby improving the stability and reliability of the MEMS sensor 100.

[0068] Referring to Figures 3 and 4, in some embodiments, the deformable material layer 30 is conductive and spaced apart from the substrate 20 to serve as a first electrode plate. The MEMS sensor 100 also includes a third conductive contact 60 and a second electrode plate 70. The third conductive contact 60 is disposed on the substrate 10 and / or the substrate 20, and the second electrode plate 70 is disposed on the surface of the substrate 20 exposed to the sealed cavity, spaced apart from the first electrode plate, and electrically connected to the third conductive contact 60. The first electrode plate and the second electrode plate 70 are configured to repel or attract each other when energized. The materials of the third conductive contact 60 and the second electrode plate 70 can be the same or different, for example, they can be platinum, nickel, copper, tin oxide, or manganese oxide. In one embodiment, the substrate 20 has a third conductive hole 23, in which conductive material is deposited to form the third conductive contact 60.

[0069] In the above embodiment, the first electrode plate and the second electrode plate 70 can form a capacitor. When the strain membrane is subjected to pressure along the first direction, the strain membrane also displaces along the first direction. At this time, DC voltages can be applied to the first electrode plate and the second electrode plate 70 respectively, so that the charge on the first electrode plate and the charge on the second electrode plate 70 are the same, for example, both positive or both negative. This causes the first electrode plate and the second electrode plate 70 to repel each other, causing the strain membrane to displace along the second direction, thereby compensating for the deflection of the strain membrane and reducing the deflection of the strain membrane, thus reducing the influence of the deflection of the strain membrane on the linearity of the test results. When the output voltage of the Wheatstone bridge circuit 14 is detected to be zero, that is, the pressure on the strain membrane in the first direction cancels out the deformation force caused by the heating, the magnitude of the applied pressure along the first direction can be calculated based on the magnitude of the input voltage.

[0070] Optionally, when the strain membrane is subjected to pressure along the second direction, it also displaces along the second direction. At this time, a DC voltage can be applied to both ends of the first and second electrode plates 70, such that the charges on the first electrode plate and the second electrode plate 70 are opposite. For example, the charge on the first electrode plate is positive and the charge on the second electrode plate 70 is negative, or vice versa. This causes the first and second electrode plates 70 to attract each other, resulting in displacement of the strain membrane along the first direction. This compensates for the deflection of the strain membrane, reducing its deflection and minimizing its impact on the linearity of the test results. When the output voltage of the Wheatstone bridge circuit 14 is detected to be zero, meaning the pressure on the strain membrane in the first direction cancels out the deformation force generated by the current, the magnitude of the applied pressure in the first direction can be calculated based on the input voltage.

[0071] Furthermore, in some embodiments, a first sealing ring 80 is provided on the first surface 11 of the substrate 10, and a second sealing ring 90 is provided on the surface of the substrate 20 near the substrate 10. The first sealing ring 80 and the second sealing ring 90 are disposed opposite to each other, thereby bonding the substrate 10 and the substrate 20 to form a sealed cavity.

[0072] Please also refer to Figure 10, which is a flowchart of the fabrication method of the MEMS sensor 100 provided in some embodiments of this application. The fabrication method of the MEMS sensor 100 provided in the embodiments of this application includes:

[0073] S10: A substrate 10 is provided, the substrate 10 having opposing first surfaces 11 and second surfaces 12, a Wheatstone bridge circuit 14 is formed on the second surface 12;

[0074] Wherein, substrate 10 is a semiconductor substrate 10, such as an SOI silicon wafer. Referring to Figure 11, step S10 may include:

[0075] S11: Four sets of varistors 140 are formed on the second surface 12 of the substrate 10;

[0076] The varistor 140 responds to pressure changes applied to the substrate 10 by generating a resistance change, thereby converting the pressure signal into an electrical signal. In some embodiments, each group of varistors 140 includes two parallel and spaced-apart sub-varistors 141. Further, in one embodiment, step S11 further includes forming a heavily doped contact region 143 on the second surface 12 of the substrate 10. The heavily doped contact region 143 may be formed between the sub-varistors 141 for electrically connecting the sub-varistors 141 in the group of varistors 140. The heavily doped contact region 143 is a region that has conductive properties after the semiconductor is doped with metal ions.

[0077] S12: A dielectric layer 15 is formed on the second surface 12 of the substrate 10, and a via is formed in the dielectric layer 15. The location of the via corresponds to the varistor 140 to expose the varistor 140.

[0078] S13: Conductive leads 144 and conductive regions 142 are formed on the dielectric layer 15;

[0079] S14: A passivation layer 16 is formed on the dielectric layer 15. The passivation layer 16 is cut out at the position corresponding to the conductive region 142, so that the conductive region 142 is exposed.

[0080] S20: A groove 13 is formed on the first surface 11 of the substrate 10, and a deformable material layer 30 is disposed on the bottom wall of the groove 13;

[0081] The method of forming the groove 13 is not limited. For example, the groove 13 can be formed by etching, solution corrosion, or mechanical cutting. The method of forming the deformable material layer 30 can be selected according to the material of the deformable material layer 30, and this application does not impose specific limitations. Step S20 includes: forming a first lead 31 at the first end of the deformable material layer 30, and forming a second lead 32 at the second end of the deformable material layer 30 opposite to the first end.

[0082] S30: A substrate 20 is provided, and the substrate 20 is used to cover the groove 13 to form a sealed cavity.

[0083] Please refer to Figure 12. Step S30 includes:

[0084] S31: A first sealing ring 80 is formed on the outer periphery of the first surface 11 of the substrate 10;

[0085] The first sealing ring can be made of materials such as chromium, aluminum, copper or gold, and can be formed by sputtering and photolithography.

[0086] S32: A first conductive hole 21 and a second conductive hole 22 are formed on the substrate 20 at intervals, so that the first lead 31 extends out of the first conductive hole 21 to form a first conductive contact 40, and the second lead 32 extends out of the second conductive hole 22 to form a second conductive contact 50.

[0087] S33: A second sealing ring 90 is formed on the outer periphery of one side of the substrate 20;

[0088] Step S33 may further include cleaning the substrate 20 to make the substrate 20 bond more tightly to the substrate 10.

[0089] The first conductive hole 21 and the second conductive hole 22 can be formed by burning the substrate 20 using the TGV process.

[0090] S34: Align and bond the first sealing ring 80 and the second sealing ring 90 to achieve electrical connection between the first lead 31 and the first conductive contact 40, and electrical connection between the second lead 32 and the second conductive contact 50, thus forming a sealed cavity.

[0091] In an embodiment where the second electrode plate 70 is provided, step S30 further includes: forming a third conductive hole 23 on the substrate 20, and forming the second electrode plate 70 at a position corresponding to the third conductive hole 23; the material of the second electrode plate 70 extends out of the third conductive hole 23 to form a third conductive contact 60.

[0092] Optionally, please refer to Figure 13, a flowchart of a method for fabricating a MEMS sensor provided in other embodiments of this application, the method including:

[0093] S101: A varistor 140 and a heavily doped contact region 143 are formed on the second surface 12 of the substrate 10;

[0094] S102: A dielectric layer 15 is formed on the second surface 12 of the substrate 10, and a via is formed on the dielectric layer 15, with the via position corresponding to the position of the varistor 140; a conductive lead 144 is formed on the dielectric layer 15, and a conductive region 142 is formed at the end of the conductive lead 144.

[0095] S103: A passivation layer 16 is formed on the dielectric layer 15, and a via is formed in the passivation layer 16 at the position corresponding to the conductive region 142, so that the conductive region 142 is exposed.

[0096] S104: A groove 13 is formed on the first surface 11 of the substrate 10, and a deformable material layer 30 and a first lead 31 and a second lead 32 electrically connected to the deformable material layer 30 are disposed on the bottom wall of the groove 13; a first sealing ring 80 is formed on the outer periphery of the first surface 11 of the substrate 10.

[0097] S105: A substrate 20 is provided, and a first conductive hole 21 and a second conductive hole 22 are formed on the substrate 20;

[0098] S106: A first conductive contact 40 is formed at the first conductive hole 21, a second conductive contact 50 is formed at the second conductive hole 22, and a second sealing ring 90 is formed on the outer periphery of the substrate 20.

[0099] S107: Align the first sealing ring 80 and the second sealing ring 90 to bond the substrate 10 and the base plate 20 together.

[0100] The MEMS sensor 100 provided in the above embodiments of this application realizes the testing of external pressure by compensating for the pressure inside and outside the cavity. The strain membrane has a small deflection and higher linearity. The pressure is tested by monitoring the moment when the output voltage of the Wheatstone bridge circuit 14 is zero. The pressure test can be visualized at the moment when the output voltage of the Wheatstone bridge circuit 14 is zero, which has higher sensitivity.

[0101] It should be noted that the position, material, size, function, etc. of each layer structure involved in the fabrication method of the MEMS sensor 100 described above in this application can be the same as those in the embodiments of the MEMS sensor 100 described above in this application. For details, please refer to the above embodiments, which will not be repeated here.

[0102] The following describes an exemplary embodiment of the MEMS sensor 100 applied to an electronic atomization device.

[0103] Please refer to Figures 14 and 15 together. Figure 14 shows an electronic atomizing device provided in some embodiments of this application; Figure 15 is a functional block diagram of the electronic atomizing device in Figure 14.

[0104] The electronic atomizing device 1000 provided in this application embodiment includes a liquid storage unit 1000A and a control unit 1000B; the liquid storage unit 1000A includes a liquid storage component 200 and an atomizing component 300; the control unit 1000B includes a MEMS sensor 100, a control circuit 400 and a power supply 500.

[0105] In some embodiments, the liquid storage component 200 is used to store the aerosol generating matrix. The aerosol generating matrix can be a solid matrix or liquid substance of plant leaves with specific aromas or substances, which can generate aerosols for users to inhale under heating without combustion. The electronic atomizing device 1000 of this application can be used in various fields, such as medical, cosmetic, or recreational inhalation. The liquid storage component 200 has an aerosol inlet end and an aerosol outlet end.

[0106] The atomizing component 300 is positioned in the airflow path from the inlet to the outlet and is in fluid communication with the liquid storage component 200. It is used to atomize the aerosol generation matrix from the liquid storage component 200. The atomizing component 300 can generate aerosols in any way, such as by ultrasonic vibration or heating to atomize the aerosol generation matrix.

[0107] The MEMS sensor 100 is the MEMS sensor 100 provided in any of the above embodiments. The MEMS sensor 100 is disposed on the airflow channel of the electronic atomizing device 1000, for example, upstream of the atomizing component 300, and is used to detect changes in air pressure within the airflow channel. In this embodiment, the MEMS sensor 100 can serve as an airflow start switch. When a user inhales from the electronic atomizing device 1000, the MEMS sensor 100 can detect the user's inhalation action and output a control signal to the control circuit 400, thereby driving the control circuit to output voltage to the atomizing component 300.

[0108] The power supply 500 can be used to provide voltage to the atomizing assembly 300 and the MEMS sensor 100. The power supply 500 can be a rechargeable battery cell or a replaceable disposable battery cell, etc.

[0109] The control circuit 400 is electrically connected to the atomizing component 300, the MEMS sensor 100, and the power supply 500. The control circuit 400 is used to control the power supply 500 to apply an electrical signal to the deformation material layer 30 according to the amount of change in the output voltage of the MEMS sensor 100 caused by the change in air pressure in the airflow channel. This causes the deformation material layer 30 to apply a force to the bottom wall of the groove 13, either close to or away from the substrate 20, so that the amount of change in the output voltage of the MEMS sensor 100 is less than or equal to a preset threshold, thereby compensating for the drift in the relationship between the resistance of the pressure-sensitive resistor 140 and the pressure caused by the pressure deformation of the substrate 10.

[0110] It is understood that changes in air pressure within the airflow channel will cause changes in the resistance of the piezoresistor 140, thereby causing changes in the output voltage Vout of the MEMS sensor 100. The amount of change in the output voltage Vout of the MEMS sensor 100 reflects the magnitude of the air pressure within the airflow channel, i.e., the magnitude of the pressure experienced by the MEMS sensor 100. When the pressure experienced by the MEMS sensor 100 exceeds a certain value, i.e., when the change in the output voltage Vout of the MEMS sensor 100 exceeds a preset threshold, the drift in the relationship between the resistance of the piezoresistor 140 and the pressure caused by the pressure deformation of the substrate 10 is compensated. By applying a force close to or away from the substrate 20 to the bottom wall of the groove 13 through the deformation material layer 30, the change in the output voltage Vout of the MEMS sensor 100 is made less than or equal to the preset threshold, thus compensating for the drift in the relationship between the resistance of the piezoresistor 140 and the pressure caused by the pressure deformation of the substrate 10. The preset threshold is the amount of change in the output voltage Vout corresponding to the drift in the relationship between the resistance of the piezoresistor 140 and the pressure caused by the pressure deformation of the substrate 10. This threshold can be obtained in advance through experiments.

[0111] In some embodiments, the control circuit 400 is further configured to detect whether the force exerted by the deformable material layer 30 on the bottom wall of the groove 13 counteracts the deformation of the bottom wall of the groove 13 caused by air pressure, and when it is detected that the force exerted by the deformable material layer 30 on the bottom wall of the groove 13 counteracts the deformation of the bottom wall of the groove 13 caused by air pressure, determine the magnitude of the air pressure based on the electrical signal applied to the deformable material layer 30. The control circuit 400 is also configured to control the atomizing assembly 300 to operate based on the magnitude of the air pressure detected by the MEMS sensor 100.

[0112] Specifically, with the preset threshold set to 0, the control circuit 400 can detect whether the change in the output voltage of the MEMS sensor 100 is 0, and when the change in the output voltage Vout of the MEMS sensor 100 is detected to be 0, it determines the magnitude of the air pressure based on the electrical signal applied to the deformable material layer 30. When the change in the output voltage Vout of the MEMS sensor 100 is detected to be 0, that is, the output voltage Vout of the MEMS sensor 100 returns to its initial value.

[0113] In some embodiments, the initial value of the output voltage Vout of the MEMS sensor 100 is 0. When the MEMS sensor 100 deforms due to air pressure, a voltage Vx is applied to the deformation material layer 30 to compensate for the deformation, so that the output voltage Vout of the MEMS sensor 100 after compensation returns to 0 (i.e., the change in output voltage Vout is 0). When the voltage Vx applied to the deformation material layer 30 is not 0, it is determined that the force exerted by the deformation material layer 30 on the bottom wall of the groove 13 caused by the voltage Vx compensates and offsets the deformation of the bottom wall of the groove 13 caused by the air pressure in the airflow channel. Thus, the air pressure can be obtained based on the value of Vx. Of course, the initial value of the output voltage Vout of the MEMS sensor 100 can also be set to other values, such as 1V, 2V, 3V, or 4V, etc., and this application does not impose specific limitations. The embodiments of this application are described with an initial value of 0.

[0114] The working principle of the MEMS sensor 100 in this embodiment will be explained below in conjunction with the user's inhalation process of the electronic atomizing device 1000:

[0115] When the user begins suction, the MEMS sensor 100 is subjected to pressure in the second direction, causing the substrate 10 to deform along this direction. Since the Wheatstone bridge circuit 14 includes a piezoresistive resistor 140, changes in the resistance of the piezoresistive resistor 140 cause a change in the output voltage Vout of the Wheatstone bridge circuit 14. Based on this change in output voltage Vout, the user's suction action can be detected. When the substrate 10 displaces along the second direction, a voltage is applied to the deformation material layer 30, causing it to heat up and displace along the first direction. This counteracts the displacement along the second direction caused by airflow fluctuations, allowing the output voltage Vout of the Wheatstone bridge circuit 14 to return to its initial value, for example, 0.

[0116] When the user blows air or inhales, causing airflow fluctuations, positive pressure may be generated inside the electronic atomizing device 1000. Therefore, in addition to displacement in the second direction, the substrate 10 may also be displaced along the first direction.

[0117] When the substrate 10 is subjected to pressure (blowing or airflow fluctuation) in the first direction, causing displacement in the first direction, the change in the resistance of the varistor 140 causes a change in the output voltage Vout of the Wheatstone bridge circuit 14. Based on the change in the output voltage Vout, the change in air pressure can be detected. Therefore, a voltage is applied to both ends of the deformable material layer 30, causing the deformable material layer 30 to be energized and heated, thereby causing the deformable material layer 30 and the substrate 10 to produce displacement in the second direction, thus counteracting the displacement in the first direction caused by the pressure in the first direction. When the displacement in the first direction and the displacement in the second direction are completely canceled out, the voltage output Vout of the Wheatstone bridge circuit 14 returns to its initial value of 0.

[0118] Therefore, depending on the setting position of the MEMS sensor 100 in this embodiment, it can sensitively detect pressure in any set first and second directions. Compared with the piezoresistive sensors of related technologies, it not only has higher accuracy but also a wider range of applications.

[0119] In the electronic atomizing device 1000 of this embodiment, when subjected to pressure along the second direction, a DC voltage can be applied to the deformable material layer 30, causing the deformable material layer 30 to displace along the first direction, thereby offsetting the displacement of the strain film along the second direction caused by suction. Similarly, when subjected to pressure along the first direction, a DC voltage can be applied to the deformable material layer 30, causing the deformable material layer 30 to displace along the second direction, thereby offsetting the displacement of the strain film along the first direction caused by airflow fluctuations. Therefore, throughout the entire usage process, the deflection of the strain film remains small, thereby improving the problem that the deformation of the substrate 10 does not change ideally linearly with pressure, thus improving the detection accuracy of the MEMS sensor 100 of this embodiment. Furthermore, the airflow channel of the electronic atomizing device 1000 is prone to condensation; since the deformable material layer 30 is sealed in the groove 13, the chance of the deformable material layer 30 being corroded or contaminated by the condensate can be reduced.

[0120] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces, or indirect coupling or communication connection between apparatuses or units, and may be electrical, mechanical, or other forms.

[0121] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0122] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A MEMS sensor, characterized in that, include: A substrate having opposing first and second surfaces; the first surface having a groove, and the second surface having a Wheatstone bridge circuit, the bridge arms of the Wheatstone bridge circuit including varistors; A substrate is used to cover the groove to form a sealed cavity; A deformable material layer is disposed within the sealed cavity and located on the bottom wall of the groove; The first conductive contact and the second conductive contact are disposed at intervals on the substrate and / or the base plate, and are respectively electrically connected to the deformable material layer; The deformable material layer is configured to deform under energization, thereby applying a force toward or away from the substrate to the bottom wall of the groove.

2. The MEMS sensor according to claim 1, characterized in that, The deformable material layer is spaced apart from the substrate; the deformable material layer includes a thermally deformable material layer or an electro-deformable material layer.

3. The MEMS sensor according to claim 2, characterized in that, The thermo-deformable material layer or the electro-deformable material layer is conductive and electrically connected to the first conductive contact and the second conductive contact.

4. The MEMS sensor according to claim 2, characterized in that, The deformable material layer includes the thermally deformable material layer and the conductive heating layer; the conductive heating layer is electrically connected to the first conductive contact and the second conductive contact, respectively.

5. The MEMS sensor according to claim 4, characterized in that, The conductive heating layer is stacked with the thermo-deformable material layer, or the conductive heating layer surrounds the thermo-deformable material layer.

6. The MEMS sensor according to any one of claims 1-5, characterized in that, The deformable material layer includes a plurality of first sub-deformable material layers and a plurality of second sub-deformable material layers spaced apart; Multiple first sub-deformable material layers and multiple second sub-deformable material layers are alternately arranged; the first sub-deformable material layers and the second sub-deformable material layers exert opposite forces on the bottom wall of the groove when energized, and are independently controlled by two different pairs of first conductive contacts and second conductive contacts.

7. The MEMS sensor according to claim 1, characterized in that, The deformable material layer is conductive and is spaced apart from the substrate to serve as a first electrode plate; The MEMS sensor also includes: A third conductive contact is disposed on the substrate and / or the base plate; The second electrode plate is disposed on the surface of the substrate exposed in the sealed cavity, spaced apart from the first electrode plate, and electrically connected to the third conductive contact; The first electrode plate and the second electrode plate are configured to repel or attract each other when energized.

8. The MEMS sensor according to claim 1, characterized in that, The substrate has a first conductive hole and a second conductive hole; the first conductive contact is disposed on the surface of the substrate away from the substrate and is electrically connected to the deformable material layer through the first conductive hole, and the second conductive contact is disposed on the surface of the substrate away from the substrate and is electrically connected to the deformable material layer through the second conductive hole.

9. The MEMS sensor according to claim 8, characterized in that, The first conductive hole is used to lead out a first lead, and the second conductive hole is used to lead out a second lead; the first lead is connected to one side of the deformable material layer, and the second lead is connected to the other side of the deformable material layer; the first lead and the second lead are connected to an external resistance sampling circuit through the first conductive contact and the second conductive contact.

10. The MEMS sensor according to claim 1, characterized in that, The Wheatstone bridge circuit includes four sets of varistors, which generate resistance changes in response to pressure changes applied to the substrate, thereby converting the pressure signal into an electrical signal; the Wheatstone bridge circuit also includes four sets of conductive regions for leading out the electrical signal.

11. The MEMS sensor according to claim 10, characterized in that, The substrate is a semiconductor substrate; each group of varistors includes two parallel and spaced sub-varistors, and a heavily doped contact region formed between the sub-varistors, the heavily doped contact region being used to electrically connect the sub-varistors in the group of varistors.

12. The MEMS sensor according to claim 11, characterized in that, The varistor and the heavily doped contact region are formed on the substrate, and a dielectric layer is also covered on the substrate, with four sets of conductive regions formed on the dielectric layer.

13. The MEMS sensor according to claim 12, characterized in that, The dielectric layer is made of silicon dioxide or silicon nitride; the substrate is a glass substrate or a ceramic substrate.

14. The MEMS sensor according to claim 12, characterized in that, The dielectric layer is further covered with a passivation layer on the side away from the substrate, and the four sets of conductive regions are at least partially exposed in the passivation layer.

15. The MEMS sensor according to claim 1, characterized in that, A first sealing ring is provided on the first surface of the substrate, and a second sealing ring is provided on the surface of the substrate near the substrate. The first sealing ring and the second sealing ring are arranged opposite to each other so that the substrate and the substrate are bonded to form the sealing cavity.

16. The MEMS sensor according to claim 2, characterized in that, The electrodeformable material layer deforms in response to changes in the electric or magnetic field.

17. The MEMS sensor according to claim 16, characterized in that, The electro-deformable material includes at least one of electro-piezoelectric deformable material (EDM), electro-piezoelectric composite material (ECM), or electro-magnetically deformable material.

18. The MEMS sensor according to claim 16, characterized in that, include: The deformable material layer is conductive and is spaced apart from the substrate to serve as a first electrode plate; The MEMS sensor also includes: A third conductive contact is disposed on the substrate and / or the base plate; The second electrode plate is disposed on the surface of the substrate exposed in the sealed cavity, spaced apart from the first electrode plate, and electrically connected to the third conductive contact; The first electrode plate and the second electrode plate are configured to repel or attract each other when energized.

19. An electronic atomizing device, characterized in that, include: A liquid storage unit for storing an aerosol generation matrix, the liquid storage unit having an aerosol inlet end and an outlet end; An atomizing component is disposed on the airflow path from the air inlet to the air outlet, and is used to atomize the aerosol generation matrix; The MEMS sensor is the MEMS sensor as described in any one of claims 1-18; the MEMS sensor is disposed on the airflow channel of the electronic atomization device and is used to detect the air pressure change in the airflow channel; A power source for supplying voltage to the atomizing assembly and the MEMS sensor; The control circuit is electrically connected to the power supply, the atomizing component, and the MEMS sensor, respectively. The control circuit is used to control the power supply to apply an electrical signal to the deformable material layer according to the change in output voltage of the MEMS sensor caused by the change in air pressure in the airflow channel, so that the deformable material layer applies a force to the bottom wall of the groove, moving closer to or away from the substrate, so that the change in output voltage of the MEMS sensor is less than or equal to a preset threshold.

20. The electronic atomizing device according to claim 19, characterized in that, The preset threshold is zero; the control circuit is also used to detect whether the change in the output voltage of the MEMS sensor is zero, and when the change in the output voltage of the MEMS sensor is detected to be zero, to determine the magnitude of the air pressure based on the electrical signal applied to the deformable material layer.

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