Optical device, lens module and electronic device

Abstract

Provided in the present application are an optical device, a lens module and an electronic device. The optical device comprises two conductive layers and a functional layer located between the two conductive layers, wherein the thickness of at least one of the two conductive layers is non-uniform; and the light transmittance of the functional layer can vary with an electric field applied to the functional layer. Different voltages or currents are applied to different regions of the conductive layers by means of a plurality of electrodes, and the strengths of electric fields formed at different positions between the two conductive layers are different, so that the light transmittances at different positions on the functional layer are different. The non-uniform conductive layer is beneficial to increasing the difference in the light transmittances at different positions on the functional layer, and expanding an adjustment range of the optical device for imaging light in a photographic scene. The optical device, lens module and electronic device provided in the present application can adjust the light transmittance at each position of the optical device on the basis of the global or local light intensity of a captured picture, and are widely applicable to various scenes, such as high-contrast scenes such as backlit portraits.

Description

Optical components, lens modules and electronic devices

[0001] This application claims priority to Chinese Patent Application No. 202410977223.7, filed on July 19, 2024, entitled "Optical Devices, Lens Modules and Electronic Devices", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of terminal device hardware, specifically to an optical device, a lens module, and an electronic device. Background Technology

[0003] In shooting scenarios, lighting is a crucial factor affecting the quality of photos or videos taken by electronic devices. In bright light, the colors in the captured image are vibrant and the contrast is high, but it can easily lead to blown-out highlights or loss of detail in shadows; in low light, the shooting process may require a longer exposure time, and noise or limited dynamic range may also be introduced.

[0004] Improving the shooting capabilities of mobile phones or tablets in different shooting scenarios and enhancing the quality of photos or videos taken by these devices is a question worth considering. Summary of the Invention

[0005] This application provides an optical device comprising a conductive layer of uneven thickness and a functional layer capable of adjusting light transmittance. The optical device has a wide range of adjustment for imaging light and strong adjustment capability, and the quality of photos and images taken in different scenes using a lens module containing the optical device is high.

[0006] In a first aspect, an optical device is provided, comprising: a first conductive layer, a functional layer, and a second conductive layer, the functional layer being located between the first conductive layer and the second conductive layer, the first conductive layer and the second conductive layer being respectively used to be electrically connected to different electrodes to form an electric field within the functional layer, the functional layer being configured such that its light transmittance can change in response to a change in the electric field; the thickness of a first portion of the first conductive layer is different from the thickness of a second portion of the first conductive layer.

[0007] In one possible implementation, both the second conductive layer and the first conductive layer are conductive layers with non-uniform thickness.

[0008] In one possible implementation, the functional layer includes one or more of the following materials: electrochromic materials, liquid crystal materials, or dye crystals.

[0009] In some scenarios, the above solution can also be understood as follows: the first conductive layer includes a first conductive part and a second conductive part, which can be understood as two parts with different thicknesses on the first conductive layer.

[0010] In this technical solution, the thickness of the first conductive layer of the optical device is non-uniform. When the first conductive layer is energized, the voltage or current distribution within it changes with the thickness at different locations. This results in differences in the voltage difference between the first and second conductive layers at different locations, and consequently, variations in the electric field strength between the two conductive layers. Implementing this technical solution facilitates achieving different voltage distributions on the conductive layers, different electric field strength distributions between the two conductive layers, and different light transmittance distributions on the functional layers.

[0011] In conjunction with the first aspect, in some implementations of the first aspect, the first conductive layer includes a first surface and a second surface disposed opposite to each other along the thickness direction, wherein the first surface and / or the second surface are continuous smooth curved surfaces.

[0012] In some scenarios, the first surface and / or the second surface being a continuous smooth curved surface can also be understood as: the first conductive layer being a continuous, uninterrupted conductive layer, or in other words, the aforementioned first conductive part and the second conductive part being continuous with each other without gaps.

[0013] In this technical solution, the first conductive layer is continuously and without gaps, which facilitates the formation of a continuously distributed electric field between the first and second conductive layers, and allows for continuous variation in light transmittance in different regions of the functional layer. Furthermore, the continuous and uninterrupted arrangement of the first conductive layer also helps reduce the probability of diffraction of imaging light on the first conductive layer, thus mitigating the adverse effects of optical devices on image quality.

[0014] In conjunction with the first aspect, in some implementations of the first aspect, the first surface faces the functional layer, the first surface is a continuous smooth curved surface, and the second surface is a plane.

[0015] In one possible implementation, the side of the second conductive layer facing the functional layer is also a continuous, smooth surface.

[0016] In this technical solution, the curved surface of the first conductive layer is set to face the functional layer, which to some extent helps to make different parts of the functional layer have a certain thickness difference, which helps to expand the difference in light transmittance between different parts of the functional layer, and to some extent can improve the adjustment range of light transmittance of the optical device.

[0017] In conjunction with the first aspect, in some implementations of the first aspect, the thickness of the first conductive layer gradually decreases from the middle to both sides along the first direction, or the thickness of the first conductive layer gradually increases from the middle to both sides along the first direction.

[0018] In one possible implementation, the first direction can be the length direction or the width direction of the first conductive layer.

[0019] In conjunction with the first aspect, in some implementations of the first aspect, the first conductive layer includes a first cross section, the first cross section being perpendicular to a first direction, and the upper boundary of the first cross section intersecting with the first surface and the lower boundary intersecting with the second surface being parallel to each other.

[0020] When the first direction is the length direction of the first conductive layer, the first cross section can be regarded as the cross section of the first conductive layer along the width direction; when the first direction is the width direction of the first conductive layer, the first cross section can be regarded as the cross section of the first conductive layer along the length direction.

[0021] This technical solution can also be understood as follows: the thickness of the first conductive layer at different positions in the first direction may vary, while the thickness of the first conductive layer at different positions in the direction perpendicular to the first direction is approximately the same.

[0022] In this technical solution, the thickness of the first conductive layer varies only along the first direction, and the shape of the first conductive layer is relatively regular. This structure of the conductive layer is beneficial for controlling the voltage or current distribution on the conductive layer.

[0023] In conjunction with the first aspect, in some implementations of the first aspect, the maximum thickness h1 of the first conductive layer and the minimum thickness h2 of the first conductive layer satisfy the following:

[0024] One possibility is that, under the same power supply method, the greater the thickness difference at different locations of the first conductive layer, the greater the voltage difference at different locations of the first conductive layer, the greater the difference in electric field strength at different locations of the electric field formed between the first and second conductive layers, and consequently, the greater the difference in optical transmittance of different regions of the functional layer located within the two electric fields.

[0025] The implementation of this technical solution is beneficial to expanding the range of adjustment of the transmittance of the optical device for imaging light, and is beneficial to improving the shooting capability of the lens module containing the optical device.

[0026] In conjunction with the first aspect, in some implementations of the first aspect, the optical device further includes a first electrode group and a second electrode group. Both the first electrode group and the second electrode group include M electrodes, where M is an integer greater than or equal to 2. The M electrodes in the first electrode group are spaced apart and are all electrically connected to the first conductive layer. The M electrodes in the second electrode group are respectively disposed corresponding to the M electrodes in the first electrode group, and the M electrodes in the second electrode group are all electrically connected to the second conductive layer. An electric field can be formed between any electrode in the first electrode group and the corresponding electrode in the second electrode group.

[0027] By placing multiple electrodes at different locations on the conductive layer, different voltages or currents can be applied to each electrode. This facilitates achieving various voltage or current distributions on the conductive layer, and consequently, various light transmittance distributions on the functional layer, improving the optical device's ability to adjust imaging light. An electric field can be formed between any two electrodes positioned opposite each other between two conductive layers. Different voltages can be applied to electrodes at different locations, resulting in varying electric field strengths at different locations on the functional layer, and consequently, differences in light transmittance.

[0028] In conjunction with the first aspect, in some implementations of the first aspect, the M electrodes in the first electrode group are uniformly distributed on the outer periphery of the first conductive layer.

[0029] In one possible implementation, the M electrodes can be made of a conductive and transparent material, such as indium tin oxide.

[0030] Placing the electrodes on the first conductive layer simplifies the circuit connection of the first conductive layer. Placing the electrodes on the outer periphery of the first conductive layer facilitates the electrical connection between the external power supply wires and the electrodes, and helps to reduce the adverse effects of the connecting wires on the optical devices.

[0031] In conjunction with the first aspect, in some implementations of the first aspect, the first electrode group includes a first electrode and a second electrode, the first electrode and the second electrode being located at opposite ends of the first conductive layer, and both being located at the position of the maximum thickness of the first conductive layer.

[0032] In this technical solution, the position of the maximum thickness of the first conductive layer is used as the input position of the external power supply, and the position of the minimum thickness of the first conductive layer is far away from the input position of the external power supply. In this case, the voltage is the largest at the position of the maximum thickness and the voltage is the smallest at the position of the minimum thickness. The implementation of this technical solution is beneficial to expanding the voltage difference at different positions on the first conductive layer, which is beneficial to expanding the range of adjustment of the transmittance of the optical device for imaging light, and beneficial to improving the shooting capability of the lens module containing the optical device.

[0033] One possible scenario is that, when the first and second electrodes are positioned at the location of the maximum thickness of the first conductive layer as described in this scheme, the electric field formed between the first and second conductive layers can cause the light transmittance at different locations on the functional layer to be distributed approximately as follows: in the direction of the line connecting the first and second electrodes, the light transmittance at different locations on the functional layer is approximately the same, or in other words, the light transmittance of the functional layer is uniform in the direction of the line connecting the first and second electrodes; in the direction perpendicular to the line connecting the first and second electrodes, the light transmittance at different locations on the functional layer varies approximately uniformly, for example, the transmittance at different locations on the functional layer increases approximately from the middle to both sides along this direction.

[0034] In conjunction with the first aspect, in some implementations of the first aspect, the optical device further includes a first fixing plate and a second fixing plate, wherein the side of the first conductive layer away from the second conductive layer is fixedly connected to the first fixing plate, and the side of the second conductive layer away from the first conductive layer is fixedly connected to the second fixing plate.

[0035] In conjunction with the first aspect, in some implementations of the first aspect, the first conductive layer is a film structure coated on the side of the first fixing sheet facing the second fixing sheet, and the second conductive layer is a film structure coated on the side of the second fixing sheet facing the first fixing sheet.

[0036] In conjunction with the first aspect, in some implementations of the first aspect, the optical device further includes a sidewall, and the sidewall, the first fixing plate, and the second fixing plate form a closed space.

[0037] Containing conductive and functional layers within an enclosed space within an optical device helps reduce contamination of these layers by dust and moisture from the external environment, and improves the stability of the optical device's performance in adjusting imaging light.

[0038] In a second aspect, a lens module is provided, including a lens arranged along the optical axis, a photosensitive element, and optical devices in the first aspect and any possible implementation thereof.

[0039] In conjunction with the second aspect, in some implementations of the second aspect, the optical device is located between the lens and the photosensitive element.

[0040] In conjunction with the second aspect, in some implementations of the second aspect, the lens module further includes an infrared cut-off filter located between the lens and the photosensitive element, and the infrared cut-off filter includes a fixing plate for the optical components.

[0041] In this technical solution, the fixed plate on the side of the optical device closest to the lens or the fixed plate on the side furthest from the lens is reused as an infrared cut-off filter, which helps to reduce the space occupied by the lens module in the optical axis direction.

[0042] In conjunction with the second aspect, in some implementations of the second aspect, no other devices are included between the optical device and the photosensitive element.

[0043] In this technical solution, no other devices are placed between the optical devices and the photosensitive element. The imaging light after being adjusted by the optical devices is no longer affected by other devices and can be directly captured by the photosensitive element for imaging, which is beneficial to improving the imaging quality of the camera module.

[0044] In conjunction with the second aspect, in some implementations of the second aspect, the optics are located on the side of the lens away from the photosensitive element.

[0045] In conjunction with the second aspect, in some implementations of the second aspect, the lens module also includes a lens cover plate, which includes a fixing piece for the optics on the side away from the lens.

[0046] In this technical solution, the fixing plate on the side of the optical device away from the lens is reused as the lens cover, which helps to reduce the space occupied by the lens module in the optical axis direction.

[0047] In conjunction with the second aspect, in some implementations of the second aspect, there are multiple lenses, and the optical components are located between the multiple lenses.

[0048] Thirdly, an electronic device is provided, comprising a battery module and a lens module in the second aspect and any possible implementation thereof, wherein the lens module is electrically connected to the battery module.

[0049] In one possible implementation, the electronic device may also include a mid-frame, with the lens module fixedly connected to the mid-frame. Attached Figure Description

[0050] Figure 1 is a schematic diagram of an electronic device provided in an embodiment of this application.

[0051] Figures 2 to 8 are schematic diagrams of a lens module provided in an embodiment of this application.

[0052] Figure 9 is a schematic diagram of the structure of an optical device provided in an embodiment of this application.

[0053] Figure 10 is a schematic diagram showing the change of light transmittance of the functional layer of the optical device provided in the embodiment of this application with voltage / current.

[0054] Figures 11 to 13 are schematic diagrams of the structure of a conductive layer provided in the embodiments of this application.

[0055] Figures 14 to 16 are schematic diagrams of another conductive layer provided in the embodiments of this application.

[0056] Figures 17 and 18 are schematic diagrams of another conductive layer provided in the embodiments of this application.

[0057] Figures 19 and 20 are schematic diagrams of another conductive layer provided in the embodiments of this application.

[0058] Figure 21 is a schematic diagram of another conductive layer provided in an embodiment of this application.

[0059] Figure 22 is a three-dimensional structural diagram of the optical device in Figure 9.

[0060] Figure 23 is a schematic diagram of another optical device provided in an embodiment of this application.

[0061] Figure 24 is a schematic diagram of the structure of another optical device provided in the embodiments of this application.

[0062] Figure 25 is a schematic diagram of the structure of another optical device provided in an embodiment of this application.

[0063] Figure 26 is a schematic diagram of the circuit connection of a conductive layer provided in an embodiment of this application.

[0064] Figure 27 is a schematic diagram of the circuit connection of another conductive layer provided in an embodiment of this application.

[0065] Figure 28 is a schematic diagram of the voltage distribution of the conductive layer and the light transmittance of different regions of the functional layer provided in the embodiments of this application.

[0066] Figure 29 is a schematic diagram of the voltage variation curves at different locations of the conductive layer with distance from the electrode provided in the embodiments of this application.

[0067] Figure 30 is a schematic diagram showing the adjustment result of light transmittance by an optical device provided in an embodiment of this application.

[0068] Figure 31 is a schematic diagram of the light transmittance adjustment result of another optical device provided in the embodiment of this application.

[0069] Figure 32 is a schematic diagram showing the adjustment result of light transmittance by another optical device provided in the embodiment of this application.

[0070] Figure 33 is a schematic diagram of the effect of taking a photo using the lens module provided in the embodiment of this application. Detailed Implementation

[0071] The embodiments of this application are described in detail below, and examples of these embodiments are shown in the accompanying drawings. In the drawings, the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions. Different fill patterns are used to denote different elements or different parts of the same element. The material of the elements, etc., can be referred to the text of the specification. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0072] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. In the description of this application, it should be understood that the terms “center,” “longitudinal,” “lateral,” “upper,” “lower,” “front,” “rear,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” and “outer,” etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are used only for the convenience of describing this application and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0073] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0074] Before formally introducing the embodiments of this application, the terms that may be used in the following content will be explained first.

[0075] A photosensitive element, also known as an image sensor, is a device that converts optical images into electronic signals and is widely used in digital cameras and other electro-optical devices. Early image sensors used analog signals, such as video camera tubes. Today, image sensors are mainly divided into two types: charge-coupled devices (CCDs) and complementary metal-oxide-semiconductor (CMOS) active pixel sensors.

[0076] Infrared cut-off filters, also known as infrared filters or heat-absorbing filters, are filters used to filter infrared wavelengths. For example, when installed on incandescent light equipment (such as slide projectors or projectors), they can prevent unnecessary heat from damaging the lens. When installed on cameras with solid-state electronic devices (CCD or CMOS), they can prevent infrared light from passing through the camera lens and causing image distortion.

[0077] To improve the shooting capabilities of electronic devices in different scenarios, one feasible approach is to equip them with multiple accessories that offer varying light transmittance. In different shooting scenarios, users can adjust the accessories by changing their positions or angles to match different light intensity distributions. For example, one such accessory could be a graduated neutral density (GND) filter. Users can manually or mechanically move the filter's position or replace it with filters of different GND levels to adjust the image quality.

[0078] Using the above adjustment scheme in electronic devices will increase the size of the device. On the other hand, due to the limited number and performance of the accessories, electronic devices using the above adjustment scheme are often limited in their adaptability to various shooting scenarios and cannot meet the lighting requirements of various shooting scenarios.

[0079] Based on this, this application provides an electronic device 10, in which the user can adjust the overall or partial transmittance of the imaging light according to the needs of the shooting scenario, thereby improving the adaptability of the electronic device to different shooting scenarios and improving the quality of photos and videos taken by the electronic device in different scenarios.

[0080] Figure 1 shows a schematic diagram of an electronic device 10, which may include a mid-frame 11, a display module 12, and a rear cover 13. The electronic device 10 may also include a front-facing camera module 14 and / or a rear-facing camera module 15. The front-facing camera module 14 and the rear-facing camera module 15 can be fixedly connected to the mid-frame 11 of the electronic device 10, thereby being installed in the electronic device 10.

[0081] One possibility is that the front-facing camera module 14 can be located below the display cover of the display module 12 of the electronic device 10.

[0082] One possibility is that the front camera module 14 and the rear camera module 15 of the electronic device 10 can both include the lens module provided in the embodiments of this application. When using the front camera module 14 and the rear camera module 15, the user can adjust the transmittance of the lens to the imaging light according to the shooting scene.

[0083] In some examples, the electronic device 10 may also include a circuit board assembly and a battery module. The circuit board assembly may include a processor and one or more sensors, such as an accelerometer, a distance sensor, and a gyroscope. The battery module may be used to power the electronic components in the electronic device 10, such as the aforementioned front-facing camera module 14 and rear-facing camera module 15, as well as the processor or various sensors in the circuit board assembly.

[0084] Figures 2 to 8 are different examples of lens modules 20 provided in the embodiments of this application. These lens modules 20 can be applied to both the front camera module 14 and the rear camera module 15 of the aforementioned electronic device 10. Various lens modules 20 may include optical components 30, which can be used to adjust the transmittance of imaging light on the lens module 20 during the shooting scene.

[0085] Figure 2 shows an example of a lens module 20 provided in an embodiment of this application. Lens module 20a, exemplarily, may include an optical element 30, a lens 40, and a photosensitive element 50. The optical axis of the lens 40 is optical axis OO. In some scenarios, optical axis OO may also be referred to as the optical axis of lens module 20a.

[0086] To ensure that the imaging light, adjusted by the optical device 30, is not affected by other optical devices and can be directly captured by the photosensitive element 50 for imaging, one possible approach is to position the optical device 30 close to the photosensitive element 50. For example, the lens 40, the optical device 30, and the photosensitive element 50 can be arranged sequentially along the optical axis OO. Alternatively, the optical device 30 can be located at position P1 in Figure 2, or it can be positioned between the lens 40 and the photosensitive element 50. In some scenarios, no other devices may be placed between the optical device 30 and the photosensitive element 50.

[0087] In order to improve the space utilization efficiency inside the lens module 20a, one possible scenario is that the optical device 30 can be located at position P2 in Figure 2, or the optical device 30 can be located on the side of the lens 40 away from the photosensitive element 50, or the optical device 30, lens 40 and photosensitive element 50 can be arranged sequentially along the optical axis OO.

[0088] One possibility is that there can be multiple lenses 40, and the optical element 30 can be located between two adjacent lenses 40. For example, as shown in Figure 3, there are three lenses 40, referred to as lens 41, lens 42 and lens 43 respectively. The optical element 30 can be located between lens 42 and lens 43 (position P3 in the figure), or the optical element 30 can also be located between lens 41 and lens 42.

[0089] To better protect the lenses and other components in the lens module, this application provides a lens module 20b, which may include a lens cover plate 60. The lens cover plate 60 may be located on the side of the lens module 20b closer to the object to be photographed and is used to prevent moisture, dust and other external environmental elements from entering the lens module 20b.

[0090] To improve the protective capability of the lens cover 60 and reduce its impact on the imaging quality of the lens module 20b, the lens cover 60 may be made of a material with high light transmittance, high abrasion resistance and high impact resistance. By way of example and not limitation, the lens cover 60 may be composed of one or more of the following materials: high aluminosilicate glass, alkali-free aluminoborosilicate glass, soda-lime silicate glass or high-purity silicon dioxide, etc.

[0091] One possible scenario is that, referring to Figure 4, the optical element 30 can be located at position P4 in the figure, or in other words, the optical element 30 can be located between the lens cap 60 and the lens element 40. In this case, the lens cap 60, the optical element 30, the lens element 40, and the photosensitive element 50 can be arranged sequentially along the optical axis OO.

[0092] To reduce the size of the lens module in the optical axis OO direction, some components of the optical device 30 can be reused.

[0093] By way of example and not limitation, the optical device 30 can be a multi-layered structure with layers stacked on top of each other, and the thickness direction of the optical device 30 can be approximately parallel to the optical axis OO of the lens 40. Exemplarily, the outermost functional layer 31 of the optical device 30 along the thickness direction can have a function similar to that of the aforementioned lens cover 60, or in other words, the functional layer 31 located outside the optical device 30 can have a similar structure to the lens cover 60, and / or be made of similar materials to the lens cover 60.

[0094] Referring to Figure 5, the above scheme can also be understood as follows: the lens module 20b may include an optical element 30, a lens 40, and a photosensitive element 50, with the optical element 30 located on the side of the lens 40 away from the photosensitive element 50. The side of the optical element 30 away from the lens 40 can be a functional layer 31, which can be used to reduce the contamination of the components in the lens module 20b by pollutants in the environment. By way of example and not limitation, the functional layer 31 may be composed of one or more of the following materials: high-alumina silicate glass, alkali-free aluminoborosilicate glass, soda-lime silicate glass, or high-purity silicon dioxide, etc.

[0095] To reduce the adverse effects of infrared radiation and other light sources on image quality and to make the colors in the images produced by electronic devices more realistic in shooting scenarios, in some examples, the lens module may also include an infrared cutoff filter. This infrared cutoff filter can be used to filter out infrared radiation in the imaging light, thereby improving the image quality of the lens module.

[0096] Figure 6 shows a lens module 20c provided in an embodiment of this application. The lens module 20c may include a lens 40, an optical device 30, a photosensitive element 50, and an infrared cut-off filter 70. The infrared cut-off filter 70 may be composed of one or more of the following materials: blue glass, polycarbonate, and resin materials such as cyclic olefin polymers.

[0097] For example, the infrared cut-off filter 70 may be located between the lens 40 and the photosensitive element 50, and the optical device 30 may be located between the lens 40 and the infrared cut-off filter 70, or the optical device 30 may be located between the infrared cut-off filter 70 and the photosensitive element 50. In other words, referring to FIG6, the optical device 30 may be located at position P5 or position P6 in the figure.

[0098] Similarly, to reduce the size of the lens module along the optical axis OO, some components of the optical device 30 can be reused. For example, the optical device 30 can be a multi-layered structure with its thickness direction approximately parallel to the optical axis OO of the lens 40. For example, the outer functional layers 31a and / or 31b of the optical device 30 along its thickness direction can have similar functions to the aforementioned infrared cut-off filter 70; or, the outer functional layers 31a and / or 31b of the optical device 30 can have a similar structure to the infrared cut-off filter 70, and / or be made of similar materials.

[0099] As one possible implementation, referring to Figure 7, the lens module 20c may include an optical element 30, a lens 40, and a photosensitive element 50, with the optical element 30 located between the lens 40 and the photosensitive element 50. The side of the optical element 30 closest to the lens 40 may be a functional layer 31a, which can be used to reduce the impact of infrared light and other light rays in the imaging light on image quality. By way of example and not limitation, the functional layer 31a may be composed of resin materials such as blue glass, polycarbonate, and cyclic olefin polymers.

[0100] As one possible implementation, referring to Figure 8, the lens module 20c may include an optical element 30, a lens 40, and a photosensitive element 50, with the optical element 30 located between the lens 40 and the photosensitive element 50. The side of the optical element 30 away from the lens 40 may be a functional layer 31b, which can be used to reduce the impact of infrared light and other light rays in the imaging light on image quality. By way of example and not limitation, the functional layer 31b may be composed of resin materials such as blue glass, polycarbonate, and cyclic olefin polymers.

[0101] As one possible implementation, the optical device 30 may include both the aforementioned functional layer 31a and functional layer 31b. Both functional layer 31a and functional layer 31b may have the function of the aforementioned infrared cut-off filter 70. Based on this, the imaging light needs to pass through at least two infrared cut-off filters before it is incident on the photosensitive element 50, resulting in a smaller proportion of infrared and other stray light in the imaging light and higher imaging quality of the lens module 20c.

[0102] In some examples, the lens module 20 may include both the lens cover plate 60 and the infrared cut-off filter 70 as described in the previous examples. Based on this, the optical device 30 may be located at any of the positions P1, P2, P3, P4, P5 and P6 described in the previous examples. This application does not impose any restrictions on this.

[0103] In some examples, the lens module 20 may include more components, and the position of the optical component 30 in the lens module 20 is not limited to the positions provided in the examples above. In other words, the optical component 30 in the lens module 20 may be located in the propagation path of the imaging light, or the position of the optical component 30 in the lens module 20 may be such that the imaging light can pass through the optical component 30.

[0104] The optical device 30 provided in the embodiments of this application will be described in detail below with reference to Figures 9 to 25. The light transmittance of the optical device 30 can vary with the applied voltage or applied current, thereby adjusting the transmittance of the imaging light.

[0105] Figure 9 shows a schematic diagram of the structure of an optical device 30a provided in an embodiment of this application. The optical device 30a may include a conductive layer 100a, a conductive layer 100b, and a functional layer 200 located between the conductive layer 100a and the conductive layer 100b.

[0106] In some examples, the transmittance of the functional layer 200 for imaging light can vary in response to changes in the electric field applied to the functional layer 200.

[0107] By way of example and not limitation, curve C in Figure 10 roughly illustrates how the light transmittance of functional layer 200 changes with the magnitude of the current and / or voltage applied to functional layer 200. One possibility is that as the applied voltage (or current) increases from S1 to S2, the light transmittance of functional layer 200 decreases from T1 to T2. Exemplarily, within the range of voltage (or current) S1 to voltage (or current) S2, the light transmittance of functional layer 200 can change approximately linearly with the voltage (or current).

[0108] For example, the functional layer 200 may be composed of inorganic electrochromic materials and / or organic electrochromic materials. For example, the inorganic electrochromic materials may include one or more of the following: tungsten trioxide, nickel oxide or indium tin oxide, and the organic electrochromic materials may include one or more of the following: iridoids, polythiophene polymers, polyaniline or fullerenes and their derivatives.

[0109] For example, the functional layer 200 can be composed of a dye-based liquid crystal material. Specifically, the dye-based liquid crystal material can include a liquid crystal substrate and dye additives. The liquid crystal substrate can refer to a material whose arrangement changes accordingly under the action of an electric field, pressure, etc., such as biphenyl liquid crystal, phenylcyclohexane liquid crystal, or lipid liquid crystal. The dye additives can include azo dyes and / or anthraquinone derivatives.

[0110] For example, the functional layer 200 may be composed of photonic crystals, such as one or more of ferroelectric photonic crystals, electrophoretic deposited photonic crystals, or electrochemically active photonic crystals.

[0111] Referring again to Figure 9, one possibility is that the thickness of functional layer 200 in different regions (the dimension along direction D2 in the figure) can be approximately equal, or in other words, the thickness of functional layer 200 is uniform in different regions. In other words, let the maximum thickness of functional layer 200 be denoted as L1, and the minimum thickness as L2. The values ​​of L1 and L2 can satisfy: |L1-L2|≤δ, δ≥0, for example, L1=L2.

[0112] By way of example and not limitation, the thickness L of the functional layer 200 can be less than or equal to 1 mm. For example, L can be 0.9 mm, 0.6 mm, 0.3 mm, 0.1 mm, or 0.01 mm, etc. When the thickness of the functional layer 200 is uniform, the aforementioned L1 and L2 can also be 0.9 mm, 0.6 mm, 0.3 mm, 0.1 mm, or 0.01 mm, etc., respectively.

[0113] Referring again to Figure 9, in some examples, the thickness (dimension in direction D2) of different regions of conductive layer 100a varies. Referring to Figure 11, in some examples, conductive layer 100a may include surface 100-1 and surface 100-2, which are positioned opposite each other along the thickness direction (direction D2). Surface 100-1 may be located away from functional layer 200, while surface 100-2 may face functional layer 200. In some scenarios, the different thicknesses of different regions of conductive layer 100a can also be understood as the different spacing between surfaces 100-1 and 100-2 at different positions in direction D2.

[0114] For example, the maximum thickness of the conductive layer 100a is denoted as h1, and the minimum thickness of the conductive layer 100a is denoted as h2. The values ​​of h1 and h2 can satisfy the following: For example, h1 = 10 × h2, h1 = 20 × h2, h1 = 40 × h2, h1 = 80 × h2, etc.

[0115] In other words, the conductive layer 100a includes at least two conductive portions with unequal thicknesses, wherein the thickness of the conductive portion with greater thickness can be h1, and the thickness of the conductive portion with less thickness can be h2, and the values ​​of h1 and h2 can satisfy the following:

[0116] In some examples, one of surfaces 100-1 and 100-2 is a curved surface, and the other is generally planar. Exemplarily, referring to Figures 11 through 14, surface 100-1 is planar, and surface 100-2 is curved. Exemplarily, surface 100-1 can be curved, and surface 100-2 can be planar. The following examples illustrate surface 100-1 as planar and surface 100-2 as curved; however, the case where surface 100-1 is curved and surface 100-2 is planar can be referred to.

[0117] Figure 11 can be considered a three-dimensional view of the conductive layer 100a, and Figure 12 can be considered a schematic diagram of surface 100-5 of the conductive layer 100a in Figure 11. One possible scenario is that, as shown in Figures 11 and 12, surface 100-2 can be a convex curved surface; that is, the distance between the middle region of surface 100-2 and surface 100-1 is relatively large, while the distance between the outer peripheral region of surface 100-2 and surface 100-1 is relatively small. Alternatively, the maximum thickness of the conductive layer 100a is approximately located in the middle portion of the conductive layer 100a, and the minimum thickness is approximately located in the outer peripheral portion of the conductive layer 100a.

[0118] By way of example and not limitation, referring to Figure 11, conductive layer 100a may include sub-parts 110 and 120, which may be approximately mirror-symmetrical about plane AA. Sub-parts 110 and 120 may be located on the left and right sides of plane AA, respectively, and can be considered to be connected at plane AA. The maximum thickness of conductive layer 100a may be located approximately at the very center of conductive layer 100a, or in other words, in this case, the dimension of plane AA in direction D2 may be approximately the maximum thickness h1 of conductive layer 100a. The minimum thickness of conductive layer 100a can be approximately located at the edge of conductive layer 100a. Alternatively, conductive layer 100a can include side surface 100-3 and side surface 100-4. Side surface 100-3 is located on the opposite side of sub-part 110 from plane AA, and side surface 100-4 is located on the opposite side of sub-part 120 from plane AA. The dimensions of side surface 100-3 and side surface 100-4 in direction D2 can be approximately the minimum thickness h2 of conductive layer 100a. In some scenarios, side surface 100-3 and side surface 100-4 can be considered as the left and right sides of conductive layer 100a, respectively.

[0119] One possibility is that, referring to Figure 11, surface 100-2 can be a continuous, smooth curved surface. By way of example, and not limitation, the thickness of conductive layer 100a generally decreases gradually from the middle portion towards the edges. By way of example, and not limitation, each point on the same line segment parallel to direction D3 on surface 100-2 is equidistant from surface 100-1; in other words, all line segments on surface 100-2 parallel to direction D3 are parallel to surface 100-1. Referring to Figure 13, the height (dimension in direction D2) at different locations on surface 100-3 is h2; similarly, the height at different locations on surface 100-4 is also h2, and the height at different locations on plane AA is h1.

[0120] Figures 14 and 15 illustrate another possible structure of the conductive layer 100a. Figure 14 can be considered a perspective view of the conductive layer 100a, and Figure 15 can be considered a schematic diagram of surface 100-5 of the conductive layer 100a in Figure 14. As shown in Figures 14 and 15, surface 100-2 can be a concave curved surface, or in other words, the distance between the middle region of surface 100-2 and surface 100-1 is small, and the distance between the outer peripheral region of surface 100-2 and surface 100-1 is large. Alternatively, the maximum thickness of the conductive layer 100a is approximately located in the outer peripheral portion of the conductive layer 100a, and the minimum thickness of the conductive layer 100a is approximately located in the middle portion of the conductive layer 100a.

[0121] By way of example and not limitation, referring to Figure 14, conductive layer 100a may include sub-parts 110 and 120, which may be approximately mirror-symmetrical about plane AA. Sub-parts 110 and 120 may be located on the left and right sides of plane AA, respectively, and can be considered to be connected at plane AA. The minimum thickness of conductive layer 100a may be located approximately at the center of conductive layer 100a, or in other words, in this case, the dimension of plane AA in direction D2 may be approximately the minimum thickness h2 of conductive layer 100a. The maximum thickness of conductive layer 100a can be approximately located at the edge of conductive layer 100a. Alternatively, conductive layer 100a can include side surface 100-3 and side surface 100-4. Side surface 100-3 is located on the opposite side of sub-part 110 from plane AA, and side surface 100-4 is located on the opposite side of sub-part 120 from plane AA. The dimensions of side surface 100-3 and side surface 100-4 in direction D2 can be approximately equal to the maximum thickness h1 of conductive layer 100a. In some scenarios, side surface 100-3 and side surface 100-4 can be considered as the left and right sides of conductive layer 100a, respectively.

[0122] One possibility is that, referring to Figure 14, surface 100-2 can be a continuous, smooth curved surface. By way of example, and not limitation, the thickness of conductive layer 100a generally increases gradually from the middle portion towards the edges. By way of example, and not limitation, each point on the same line segment parallel to direction D3 on surface 100-2 is equidistant from surface 100-1; in other words, all line segments on surface 100-2 parallel to direction D3 are parallel to surface 100-1. Referring to Figure 16, the height (dimension in direction D2) at different locations on surface 100-3 is h1; similarly, the height at different locations on surface 100-4 is also h1, and the height at different locations on plane AA is h2.

[0123] In some examples, both surfaces 100-1 and 100-2 of the conductive layer 100a can be curved surfaces.

[0124] For example, as shown in FIG17, surfaces 100-1 and 100-2 can both be convex curved surfaces. In other words, taking plane Rf1 perpendicular to direction D2 in FIG17 as a reference, the distance from the middle region of surface 100-1 to plane Rf1 is greater than the distance from the outer peripheral region of surface 100-2 to plane Rf1. Similarly, the distance from the middle region of surface 100-2 to plane Rf1 is greater than the distance from the outer peripheral region of surface 100-2 to plane Rf1. Considering the thickness of conductive layer 100a, the thickness of the middle portion of conductive layer 100a is greater than the thickness of its outer peripheral portion.

[0125] Similar to surface 100-2 in Figure 11 or Figure 14, surfaces 100-1 and 100-2 in Figure 17 can both be continuous smooth surfaces.

[0126] One possibility is that surface 100-1 may include multiple points R1, each at a distance h11 from plane Rf1, where h11 is the maximum distance from surface 100-1 to plane Rf1. These points R1 may all lie on a line Lr1, which may be parallel to the boundary of surface 100-1. In other words, in this case, the shape of surface 100-1 is approximately the same as the shape of surface 100-2 in Figure 11. Similarly, surface 100-2 may also be approximately the same as the shape of surface 100-2 in Figure 11.

[0127] One possible scenario is that surface 100-1 may include a point R1, the distance from which point R1 to plane Rf1 is h11, where h11 is the maximum value of the distance from surface 100-1 to plane Rf1. In this case, as shown in Figure 18, surface 100-1 can be approximately convex in shape, like a convex mirror. Similarly, surface 100-2 can also be approximately convex in shape, like a convex mirror, and based on this, conductive layer 100a can be approximately convex in shape, like a convex lens with convex surfaces on both sides, as shown in Figure 18.

[0128] For example, as shown in FIG19, surfaces 100-1 and 100-2 can both be concave curved surfaces. In other words, taking plane Rf2 perpendicular to direction D2 in FIG19 as a reference, the distance from the outer peripheral region of surface 100-1 to plane Rf2 is greater than the distance from the middle region of surface 100-2 to plane Rf2. Similarly, the distance from the outer peripheral region of surface 100-2 to plane Rf2 is greater than the distance from the middle region of surface 100-2 to plane Rf2. Considering the thickness of conductive layer 100a, the thickness of the outer peripheral portion of conductive layer 100a is greater than the thickness of its middle portion.

[0129] One possible scenario is that surface 100-1 may include multiple points R2, each distance h12 from plane Rf2, where h12 is the minimum distance from surface 100-1 to plane Rf1. These points R2 may all lie on line Lr2, which may be parallel to the boundary of surface 100-1. In other words, in this case, the shape of surface 100-1 is approximately the same as the shape of surface 100-2 in Figure 14. Similarly, surface 100-2 may also approximately have the same shape as the surface 100-2 in Figure 14.

[0130] One possible scenario is that surface 100-1 may include a point R2, the distance from which point R2 to plane Rf2 is h12, where h12 is the minimum distance from surface 100-1 to plane Rf2. In this case, as shown in Figure 20, surface 100-1 can be approximately shaped like a concave mirror. Similarly, surface 100-2 can also be approximately shaped like a concave mirror, and based on this, conductive layer 100a can be approximately shaped like a concave lens with both sides concave, as shown in Figure 20.

[0131] For example, one of surfaces 100-1 and 100-2 can be a convex surface, and the other can be a concave surface. One possibility is that both surfaces 100-1 and 100-2 are smooth surfaces. The shape of the convex surface can be similar to that of surface 100-2 in Figure 11 above, or the shape of the convex surface can be similar to that of surface 100-1 in Figure 18 above; the shape of the concave surface can be similar to that of surface 100-2 in Figure 14 above, or the shape of the concave surface can be similar to that of surface 100-1 shown in Figure 20 above. Related descriptions can be found in the preceding text and will not be repeated here.

[0132] The shapes of surfaces 100-1 and 100-2 in the above example are merely exemplary. Surfaces 100-1 and 100-2 may also have more shapes. For example, the left side of surface 100-1 may be a convex surface and the right side may be a concave surface. This application does not limit this.

[0133] The above example uses conductive layer 100a as an example for illustration. For relevant descriptions of the structure, shape, etc. of conductive layer 100b, please refer to the relevant content in conductive layer 100a.

[0134] Referring again to Figure 9, in some examples, optical device 30a may include an electrode 101a, which may be electrically connected to conductive layer 100a and also electrically connected to a wire. When an external power source supplies power to electrode 101a through the wire, current can flow through conductive layer 100a. Similarly, optical device 30a may also include an electrode 101b, which may be electrically connected to conductive layer 100b and also electrically connected to a wire. When an external power source supplies power to electrode 101b through the wire, current can flow through conductive layer 100b.

[0135] When different currents are passed through conductive layers 100a and 100b, or when different voltages are applied to conductive layers 100a and 100b, an electric field of a certain magnitude can be formed between conductive layers 100a and 100b (where functional layer 200 is located in Figure 9). Under the influence of the electric field, the transmittance of functional layer 200 for imaging light can change accordingly.

[0136] To enable the generation of electric fields of varying intensities at different locations between conductive layers 100a and 100b, a feasible approach is to provide at least two electrodes 101a on conductive layer 100a and at least two electrodes 101b on conductive layer 100b. For example, the multiple electrodes 101a on conductive layer 100a and the multiple electrodes 101b on conductive layer 100b can be correspondingly arranged. The arrangement of electrodes 101a and 101b will be described in detail below and will not be elaborated upon here.

[0137] In some scenarios, the multiple electrodes 101a on the conductive layer 100a can be regarded as one electrode group, and the multiple electrodes 101b on the conductive layer 100b can be regarded as another electrode group. In this scenario, the multiple electrodes in the electrode group on the conductive layer 100a can be set to correspond with the multiple electrodes in the electrode group on the conductive layer 100b.

[0138] Referring again to Figure 9, in some examples, the optical device 30a may further include a fixing plate 300a and a fixing plate 300b, wherein the fixing plate 300a may be located on the side of the conductive layer 100a away from the functional layer 200, and the fixing plate 300b may be located on the side of the conductive layer 100b away from the functional layer 200. In other words, the fixing plates 300a and 300b can be considered to be located outside the optical device 30a, and the fixing plates 300a and 300b may be arranged opposite to each other.

[0139] Referring to the relevant description in Figure 5 above, in some scenarios, the aforementioned fixing plate 300a or fixing plate 300b can be regarded as the functional layer 31 of the optical device 30 in Figure 5. In this scenario, the fixing plate 300a or fixing plate 300b can be composed of one or more of the following materials: high aluminosilicate glass, alkali-free aluminoborosilicate glass, sodium-calcium silicate glass, or high-purity silicon dioxide, etc.

[0140] Referring to the descriptions in Figures 7 and 8 above, in some scenarios, the aforementioned fixing plate 300a or fixing plate 300b can be regarded as the functional layer 31a of the optical device 30 in Figure 7, or the fixing plate 300a or fixing plate 300b can be regarded as the functional layer 31b of the optical device 30 in Figure 8. In this scenario, the fixing plate 300a or fixing plate 300b can be composed of resin materials such as blue glass, polycarbonate, and cyclic olefin polymers.

[0141] In some examples, the optical device 30a may also include a sidewall 400, as shown in FIG9. The sidewall 400 may be located on the outer periphery of the optical device 30a, or the sidewall 400 may surround the outside of the fixing plate 300a, the conductive layer 100a, the functional layer 200, the conductive layer 100b and the fixing plate 300b.

[0142] In one possible implementation, both conductive layer 100a and conductive layer 100b can be substantially film-shaped. Conductive layer 100a and conductive layer 100b can be formed by depositing films on two opposing surfaces of fixed sheet 300a and fixed sheet 300b. For example, conductive layer 100a can be formed on the surface of fixed sheet 300a by one or more of the following methods, and conductive layer 100b can be formed on the surface of fixed sheet 300b by one or more of the following methods: vacuum evaporation, chemical vapor deposition, ion-assisted deposition, ion beam sputtering, or sol-gel method, etc.

[0143] In one possible implementation, the aforementioned sidewall 400 may be formed by curing an adhesive material coated on the outer side of the fixing sheet 300a, conductive layer 100a, functional layer 200, conductive layer 100b, and fixing sheet 300b. Exemplarily, the sidewall 400 may be formed by curing one or more of the following adhesive materials: optically transparent adhesive, UV-curable adhesive, epoxy adhesive, or acrylic adhesive, etc.

[0144] To reduce the adverse effects of diffraction and other light rays on imaging quality when imaging light passes through the conductive layer 100a or conductive layer 100b of optical device 30a, and to enable the formation of a continuous electric field between conductive layer 100a and conductive layer 100b, as shown in Figures 11, 14, 18 and 20, the conductive layer 100a and conductive layer 100b of optical device 30a can be a continuous whole, or in other words, the conductive layer 100a and conductive layer 100b do not include multiple separated and spaced parts, or in other words, there are no partitions inside the conductive layer 100a and conductive layer 100b.

[0145] In some examples, in order to control the voltage or current in different regions on conductive layer 100a or conductive layer 100b, referring to FIG21, conductive layer 100a and / or conductive layer 100b may include at least two mutually separated conductive portions, or conductive layer 100a and / or conductive layer 100b may be composed of a plurality of mutually spaced conductive portions.

[0146] For example, schematic diagram 21-1 in FIG21 can be regarded as a top view of the conductive layer 100a in FIG11 or FIG14. In the figure, the conductive layer 100a is composed of conductive portions 111, 112, 113, 114 and 115 spaced apart from each other. The top view of these conductive portions is generally rectangular, and a spacer Gd1 is provided between each pair of adjacent conductive portions. One possibility is that the spacer Gd1 can be composed of conductive material, for example, conductive adhesive or metal material. Another possibility is that the spacer Gd1 can be trench-shaped, or that a trench or groove can be formed between two adjacent conductive portions. Another possibility is that the spacer Gd1 can be composed of insulating material. For example, the spacer Gd1 can be a long strip-shaped protrusion structure, which can be formed by the main body of the fixing piece 300a connected to the conductive layer 100a protruding outward. In other words, the spacer Gd1 can be made of the same material as the fixing piece 300a. For example, the spacer Gd1 can be composed of one or more of the following materials: high-alumina silicate glass, alkali-free aluminoborosilicate glass, sodium-calcium silicate glass, or high-purity silicon dioxide.

[0147] For example, schematic diagram 21-2 in FIG21 can be regarded as a top view of the conductive layer 100a in FIG18 or FIG20. In the figure, the conductive layer 100a is composed of conductive portions 111, 112 and 113 spaced apart from each other. The top view of these conductive portions is generally circular or annular, and a spacer Gd2 is provided between each pair of adjacent conductive portions. One possibility is that the spacer Gd2 can be composed of conductive material, for example, the spacer Gd2 can be composed of conductive adhesive or metal material. Another possibility is that the spacer Gd2 can be trench-shaped, or that a trench or groove can be formed between two adjacent conductive portions. Another possibility is that the spacer Gd2 can be composed of insulating material. For example, the spacer Gd2 can be an annular protrusion structure, which can be formed by the main body of the fixing piece 300a connected to the conductive layer 100a protruding outward. In other words, the spacer Gd2 can be composed of the same material as the fixing piece 300a. For example, the spacer Gd2 can be composed of one or more of the following materials: high-alumina silicate glass, alkali-free aluminoborosilicate glass, soda-lime silicate glass, or high-purity silicon dioxide.

[0148] Figure 22 is a three-dimensional structural schematic diagram of the aforementioned optical device 30 provided in the embodiment of this application. Schematic diagram 22-1 can be regarded as a three-dimensional structural schematic diagram of the optical device 30a in Figure 11, and schematic diagram 22-2 can be regarded as another three-dimensional structural schematic diagram of the optical device 30a in Figure 11. Alternatively, schematic diagram 22-2 can be regarded as a three-dimensional structural schematic diagram of an optical device including the convex lens-shaped conductive layer 100a shown in Figure 18.

[0149] Referring to Figure 22, in some scenarios, the structure of the optical device 30a can also be understood as follows: the relatively disposed fixing plates 300a and 300b, along with the sidewall 400, can surround and form a receiving cavity, which can be used to house the conductive layer 100a, the conductive layer 100b, and the functional layer 200. Alternatively, the fixing plates 300a and 300b coated with the conductive layer 100a, along with the sidewall 400, can surround and form a receiving cavity, which can be used to house the functional layer 200. In one possible implementation, to reduce the adverse effects of particles and moisture in the external environment of the optical device 30 on the conductive layer 100a, the conductive layer 100b, and the functional layer 200, the aforementioned receiving cavity can be a closed receiving cavity.

[0150] Figure 9 illustrates only one exemplary structure of an optical device 30. The optical device 30 may have many other structures. For example, the radial cross-sectional shape of the optical device 30 may be elliptical, triangular, or hexagonal, etc., and this application does not limit this. Figure 23 shows an optical device 30b provided in an embodiment of this application, Figure 24 shows an optical device 30c provided in an embodiment of this application, and Figure 25 shows an optical device 30d provided in an embodiment of this application.

[0151] Similar to the aforementioned optical device 30a, optical devices 30b, 30c, and 30d can all include a functional layer 200, a fixing plate 300a, a fixing plate 300b, and a sidewall 400. The functional layer 200 can be used to adjust the transmittance of imaging light incident on optical devices 30b, 30c, and 30d. The fixing plates 300a, 300b, and sidewall 400 can be used to form a receiving cavity to accommodate the conductive layers 100a and 100b, as well as the functional layer 200. Further details regarding these components can be found in the corresponding descriptions above and will not be repeated here.

[0152] Unlike the aforementioned optical device 30a, the two surfaces of the conductive layer 100a and conductive layer 100b in optical device 30b are both concave curved surfaces; the surface of the conductive layer 100b facing the conductive layer 100a in optical device 30c is approximately flat; and the surface of the conductive layer 100a facing the conductive layer 100b in optical device 30d is a concave curved surface, while the surface of the conductive layer 100b facing the conductive layer 100a is approximately flat.

[0153] Figures 26 and 27 are schematic diagrams of the conductive layer circuit connections in the optical device 30. Figures 26 and 27 also show the method of electrode arrangement in the optical device 30. The electrodes on the conductive layer 100a can be arranged correspondingly to the electrodes on the conductive layer 100b. The following description focuses on the conductive layer 100a, while the conductive layer 100b can be referred to for implementation.

[0154] By applying different voltages to the electrodes on conductive layer 100a (e.g., electrode 101a in FIG. 25) and the corresponding electrodes on conductive layer 100b (e.g., electrode 101b in FIG. 25), a voltage difference is generated between the two opposing electrodes. This voltage difference can generate an electric field between the two electrodes. The strength of this electric field can adjust the light transmittance of the portion of functional layer 200 located between the two electrodes.

[0155] For example, a positive voltage can be applied to the electrode on conductive layer 100a, and correspondingly, a negative voltage can be applied to the corresponding electrode on conductive layer 100b. Also, for example, a negative voltage can be applied to the electrode on conductive layer 100a, and correspondingly, a positive voltage can be applied to the corresponding electrode on conductive layer 100b.

[0156] When multiple electrodes are provided on conductive layer 100a, the voltage applied to these electrodes can all be positive or negative. Similarly, when multiple electrodes are provided on conductive layer 100b, the voltage applied to these electrodes can all be negative or positive.

[0157] In some examples, for the conductive layer 100a shown in FIG11 or FIG14, referring to FIG26, the conductive layer 100a may be provided with multiple electrodes, and correspondingly, the conductive layer 100b may be provided with the same number of electrodes.

[0158] For example, conductive layer 100a may have electrodes 101-1 and 101-2, which can be electrically connected to the positive terminal of an external power supply. Correspondingly, conductive layer 100b may have two electrodes, corresponding to the aforementioned electrodes 101-1 and 101-2, respectively, and these two electrodes on conductive layer 100b can be electrically connected to the negative terminal of the external power supply. Alternatively, electrodes 101-1 and 101-2 of conductive layer 100a can be electrically connected to the negative terminal of the external power supply, and the two electrodes on conductive layer 100b can be electrically connected to the positive terminal of the external power supply. A closed loop can be formed between the external power supply, conductive layer 100a, functional layer 200, and conductive layer 100b. In this closed loop, a voltage difference exists between conductive layer 100a and conductive layer 100b, and an electric field can be generated between them at the location of functional layer 200.

[0159] One possibility is that, given the difference in thickness at different locations of the conductive layer 100a, the current or voltage supplied by the external power source to electrodes 101-1 and 101-2 may be unequal. A voltage difference can be formed between electrodes 101-1 and 101-2 in the conductive layer 100a, allowing the current or voltage supplied by the external power source to be redistributed across the conductive layer 100a. Based on this, the electric field strength between the conductive layers 100a and 100b will differ at different locations, and the transmittance of imaging light will also differ in different regions of the functional layer 200 located within the electric field.

[0160] To reduce adverse effects such as the obstruction of imaging light by the electrodes or the wires connected to the electrodes, the electrodes on the conductive layer 100a can be located on the outer periphery of the conductive layer 100a.

[0161] One possibility is that electrodes 101-1 and 101-2 can be located on opposite sides of the conductive layer 100a and close to the outer periphery of the conductive layer 100a. Another possibility is that electrodes 101-1 and 101-2 can be located on adjacent sides of the conductive layer 100a and close to the outer periphery of the conductive layer 100a. Yet another possibility is that electrodes 101-1 and 101-2 can be located on the same side of the conductive layer 100a and close to the outer periphery of the conductive layer 100a.

[0162] In some examples, more electrodes may be provided on conductive layer 100a, and a corresponding number of electrodes may be provided on conductive layer 100b.

[0163] For example, in Figure 26, electrodes 101-1, 101-2, 101-3, and 101-4 can be disposed on conductive layer 100a. These four electrodes can all be electrically connected to the positive terminal of an external power supply. Correspondingly, four electrodes can be disposed on conductive layer 100b, and all four electrodes on conductive layer 100b can be electrically connected to the negative terminal of the external power supply. Alternatively, electrodes 101-1, 101-2, 101-3, and 101-4 can all be electrically connected to the negative terminal of the external power supply, and all four electrodes on conductive layer 100b can be electrically connected to the positive terminal of the external power supply. A closed loop can be formed between the external power supply, conductive layer 100a, functional layer 200, and conductive layer 100b. In this closed loop, there is a voltage difference between conductive layer 100a and conductive layer 100b, and an electric field can be formed between them at the location of functional layer 200.

[0164] One possible configuration is that electrode 101-1 is approximately located to the left of conductive layer 100a and near its edge; electrode 101-2 is approximately located to the upper part of conductive layer 100a and near its edge; electrode 101-3 is approximately located to the right of conductive layer 100a and near its edge; and electrode 101-4 is approximately located to the lower part of conductive layer 100a and near its edge. By way of example and not limitation, electrode 101-1 may be approximately located in the middle region of the left edge of conductive layer 100a; electrode 101-2 may be approximately located in the middle region of the upper edge of conductive layer 100a; electrode 101-3 may be approximately located in the middle region of the right edge of conductive layer 100a; and electrode 101-4 may be approximately located in the middle region of the lower edge of conductive layer 100a. The line connecting electrodes 101-1 and 101-3 is approximately perpendicular to the line connecting electrodes 101-3 and 101-4. Referring to Figure 11, electrodes 101-2 and 101-4 are approximately located at the positions with the largest thickness values ​​on the conductive layer 100a, while electrodes 101-1 and 101-3 are approximately located at the positions with the smallest thickness values ​​on the conductive layer 100a.

[0165] Given the difference in thickness in different regions of the conductive layer 100a, by adjusting the current or voltage supplied by an external power source to electrodes 101-1, 101-2, 101-3, and 101-4, the voltage or current in different regions of the conductive layer 100a will differ. Based on this, the electric field strength between the conductive layer 100a and the conductive layer 100b will differ at different locations, and the transmittance of imaging light in different regions of the functional layer 200 located in the electric field will also differ.

[0166] In some examples, referring to FIG27, the conductive layer 100a shown in FIG18 or FIG20 may be provided with multiple electrodes, and correspondingly, the conductive layer 100b may be provided with the same number of electrodes.

[0167] For example, conductive layer 100a may have electrodes 101-1 and 101-2, which can be electrically connected to the positive terminal of an external power source. Correspondingly, conductive layer 100b may have two electrodes, corresponding to electrodes 101-1 and 101-2 respectively, which can be electrically connected to the negative terminal of the external power source. Alternatively, electrodes 101-1 and 101-2 can be electrically connected to the negative terminal of the external power source, and the two electrodes on conductive layer 100b can be electrically connected to the positive terminal of the external power source. A closed loop can be formed between the external power source, conductive layer 100a, functional layer 200, and conductive layer 100b. Within this closed loop, a voltage difference exists between conductive layer 100a and conductive layer 100b, creating an electric field at the location of functional layer 200.

[0168] One possibility is that, given the varying thickness of the conductive layer 100a at different locations, the current or voltage supplied by the external power source to electrode 101-1 may not be equal to the current or voltage supplied to electrode 101-2. A voltage difference can form between electrode 101-1 and electrode 101-2 in the conductive layer 100a, allowing the current or voltage supplied by the external power source to be redistributed across the conductive layer 100a. Consequently, the electric field strength between the conductive layers 100a and 100b will differ at different locations, causing changes in the transmittance of the functional layer 200 within the electric field for imaging light.

[0169] To reduce adverse effects such as the obstruction of imaging light by the electrodes or the wires connected to the electrodes, the electrodes on the conductive layer 100a can be located on the outer periphery of the conductive layer 100a.

[0170] Referring again to Figure 27, the positions of electrodes 101-1 and 101-2 on the conductive layer 100a are denoted as points A and B, respectively. The center point of the side of the conductive layer 100a facing the functional layer 200 is denoted as point O. An angle α can be formed between the line OA connecting point A and center point O and the line OB connecting point B and center point O. One possible scenario is that the angle α can satisfy: 0° < α < 360°. For example, the angle α can be 30°, 45°, 60°, 90°, 180°, and 270°, etc. For example, the angle α = 180°, or in other words, electrodes 101-1 and 101-2 are arranged approximately opposite each other and are both located on the outer periphery of the conductive layer 100a, and the line connecting electrodes 101-1 and 101-2 passes through the aforementioned center point, point O.

[0171] In some examples, more electrodes may be provided on conductive layer 100a, and a corresponding number of electrodes may be provided on conductive layer 100b.

[0172] For example, in FIG27, conductive layer 100a may be provided with electrodes 101-1, 101-2, 101-3, 101-4, 101-5, 101-6, 101-7, and 101-8, and conductive layer 100b may be provided with eight electrodes accordingly. Electrodes 101-1 to 101-8 may all be electrically connected to the positive terminal of an external power supply, and all eight electrodes on conductive layer 100b may be electrically connected to the negative terminal of the external power supply. Alternatively, electrodes 101-1 to 101-8 may all be electrically connected to the negative terminal of the external power supply, and all eight electrodes on conductive layer 100b may be electrically connected to the positive terminal of the external power supply. An external power source can form a closed loop with conductive layer 100a, functional layer 200 and conductive layer 100b. In this closed loop, there is a voltage difference between conductive layer 100a and conductive layer 100b, and an electric field can be generated between them at the location of functional layer 200.

[0173] One possibility is that the eight electrodes (electrode 101-1 to electrode 101-8) on the conductive layer 100a can be evenly distributed in the circumference of the conductive layer 100a. In other words, the angles formed by the lines connecting the positions of two adjacent electrodes to the center point O are equal (approximately 45°).

[0174] Given the difference in thickness in different regions of the conductive layer 100a, by adjusting the current or voltage supplied by an external power source to the eight electrodes (electrodes 101-1 to 101-8) on the conductive layer 100a, the voltage or current distribution in different regions of the conductive layer 100a will differ. Based on this, the electric field strength between the conductive layer 100a and the conductive layer 100b will differ at different locations, and the transmittance of imaging light in different regions of the functional layer 200 located in the electric field will change.

[0175] The above description focuses on the arrangement of multiple electrodes on conductive layer 100a. The arrangement of multiple electrodes on conductive layer 100b can be referenced from the above description.

[0176] In the process of adjusting the transmittance of imaging light using optical device 30, one feasible approach is that an external power supply can simultaneously supply current or apply voltage to conductive layer 100a and conductive layer 100b, so that a voltage difference is generated between the two ends of the functional layer 200 located between conductive layer 100a and conductive layer 100b along the thickness direction. Referring to Figure 10, when the voltage difference between the two ends of the functional layer 200 located along the thickness direction is different in different regions of the functional layer 200, the transmittance of imaging light through different regions of the functional layer 200 will be different.

[0177] As an example, the conductive layers 100a and 100b of the optical device 30a in Figure 11 can be electrically connected to an external power source as shown in Figure 26. The external power source energizes the electrodes of the conductive layers 100a and 100b, so that the voltage difference between the electrodes 101-2 of the conductive layer 100a and the corresponding electrodes of the conductive layer 100b is U1, the voltage difference between the electrodes 101-4 of the conductive layer 100a and the corresponding electrodes of the conductive layer 100b is U1, the voltage difference between the electrodes 101-1 of the conductive layer 100a and the corresponding electrodes of the conductive layer 100b is 0, and the voltage difference between the electrodes 101-3 of the conductive layer 100a and the corresponding electrodes of the conductive layer 100b is 0.

[0178] Powering the optical device 30a in the manner described above, schematic diagram 28-1 in Figure 28 exemplarily illustrates the voltage distribution on the conductive layer 100a. The highest voltage locations in the conductive layer 100a are approximately at electrodes 101-2 and 101-4, while the lowest voltage locations are approximately near the left and right edges of the conductive layer 100a. The voltage at different locations on the conductive layer 100a generally decreases from the positions of electrodes 101-2 and 101-4 towards the left and right edges. Curve C1 in Figure 29 shows the variation of the voltage at different locations on the conductive layer 100a with the distance from electrodes 101-2 (or 101-4) in direction D1. According to curve C1, the voltage difference between the maximum and minimum voltage locations on the conductive layer 100a is ΔU1. Curve C1 has a steep slope; in other words, the voltage between the maximum and minimum voltage locations on the conductive layer 100a decreases rapidly with increasing distance from the electrodes.

[0179] Figure 28, schematic diagram 28-2, exemplarily illustrates the distribution of light transmittance at different locations on the functional layer 200 located between conductive layers 100a and 100b, given the voltage distribution in schematic diagram 28-1. The maximum light transmittance on the functional layer 200 is approximately located at the left and right edges of the functional layer 200, while the minimum light transmittance is approximately located in the middle of the upper and lower parts of the functional layer 200. In other words, the location of the maximum light transmittance on the functional layer 200 corresponds to the location of the minimum voltage on conductive layer 100a, and the location of the minimum light transmittance on the functional layer 200 corresponds to the location of the maximum voltage on conductive layer 100a. Furthermore, the difference between the maximum and minimum light transmittance on the functional layer 200 is approximately 0.8 units.

[0180] Furthermore, referring to Figures 11, 26, and 28, electrodes 101-2 and 101-4 of conductive layer 100a are approximately located at the positions where the thickness of conductive layer 100a is greatest. Along the line connecting electrodes 101-2 and 101-4 (direction D3 in Figure 28), the thickness of conductive layer 100a is essentially the same. In the direction perpendicular to the line connecting electrodes 101-2 and 101-4 (direction D1 in Figure 28), the thickness of conductive layer 100a changes uniformly from the center outwards along direction D1. When conductive layer 100a is powered by electrodes 101-2 and 101-4, referring to schematic diagram 28-2 in Figure 28, the light transmittance of functional layer 200 at different positions in direction D3 is essentially the same, while the light transmittance of functional layer 200 at different positions in direction D1 generally increases from the center outwards along direction D1. In other words, the transmittance of functional layer 200 is approximately uniform in direction D3, and the transmittance of functional layer 200 varies approximately uniformly and smoothly in direction D1. Or, in other words, in directions where the thickness of conductive layer 100a is uniform or approximately the same, the light transmittance of functional layer 200 is basically the same; in directions where the thickness of conductive layer 100a varies uniformly, the light transmittance of functional layer 200 varies approximately uniformly.

[0181] For example, in schematic diagram 28-2, line segment Lv is parallel to direction D3, and the transmittance of functional layer 200 is basically the same at different positions on line segment Lv. Line segment Lh is parallel to direction D1. Reference point Pr1 is a reference point on functional layer 200 roughly located in the middle of line segment Lh, and reference points Pr2 and Pr3 are reference points on functional layer 200 roughly located at both ends of line segment Lh. On line segment Lh, the transmittance at different positions gradually increases from reference point Pr1 to reference points Pr2 and Pr3.

[0182] In contrast, when the thickness of the conductive layers on both sides of the functional layer is uniform (e.g., the thickness is 0.5×(h1+h2)), a voltage is applied to the uniformly thick conductive layer in the manner described above for conductive layers 100a and 100b. Specifically, referring to schematic diagram 28-3 in Figure 28, the voltage difference applied between the electrode W-2 of the uniform conductive layer 1 above the functional layer and the corresponding electrode of the uniform conductive layer 2 below the functional layer is U1; the voltage difference applied between the electrode W-4 of the uniform conductive layer 1 and the corresponding electrode of the uniform conductive layer 2 is U1; the voltage difference applied between the electrode W-1 of the uniform conductive layer 1 and the corresponding electrode of the uniform conductive layer 2 is 0; and the voltage difference applied between the electrode W-3 of the uniform conductive layer 1 and the corresponding electrode of the uniform conductive layer 2 is 0.

[0183] Figure 28, schematic diagram 28-3, also illustrates the voltage distribution on the uniformly conductive layer 1 when powering an optical device having a uniformly conductive layer 1 and a uniformly conductive layer 2 according to the above power supply method. The highest voltage in the uniformly conductive layer 1 is approximately located at electrodes W-2 and W-4, while the lowest voltage is approximately located in the central region of the uniformly conductive layer 1. The voltage at different locations on the uniformly conductive layer 1 generally decreases outwards from the positions of electrodes W-2 and W-4. Curve C2 in Figure 29 shows the variation of the voltage at different locations on the uniformly conductive layer 1 with the distance from electrode W-2 (or electrode W-4) in direction D3. According to curve C2, the voltage difference between the maximum and minimum voltage points on the uniformly conductive layer 1 is ΔU2. The slope of curve C2 is relatively gentle; in other words, the voltage between the maximum and minimum voltage points on the uniformly conductive layer 1 decreases more slowly with increasing distance from the electrodes.

[0184] Figure 28, schematic diagram 28-4, exemplarily illustrates the light transmittance at different locations on the functional layer between the uniformly conductive layer 1 and the uniformly conductive layer 2, under the voltage distribution of schematic diagram 28-3. The maximum optical transmittance on the functional layer is approximately located in the central region of the functional layer, while the minimum light transmittance is approximately located in the middle region of the upper and lower parts of the functional layer. In other words, the location of the maximum light transmittance corresponds to the location of the minimum voltage on the conductive layer, and the location of the minimum light transmittance corresponds to the location of the maximum voltage on the conductive layer. Furthermore, the difference between the maximum and minimum light transmittance on the functional layer is approximately 0.4 units.

[0185] Referring to Figures 28 and 29, for the same power supply method, when the thickness of the conductive layer in the optical device is uneven, the voltage difference at different locations on the conductive layer is large, and the difference in light transmittance at different locations on the functional layer is large; when the thickness of the conductive layer in the optical device is uniform, the voltage difference at different locations on the conductive layer is small, and the difference in light transmittance at different locations on the functional layer is small.

[0186] Referring to Figures 9 and 11 above, the thickness of the conductive layer 100a is approximately located in the middle portion of the conductive layer 100a (the area where electrodes 101-2 and 101-4 are located), while the thickness is approximately located at the left and right edges of the conductive layer 100a. For a uniform conductive layer, the thickness at different locations is roughly the same. In other words, the thickness of the conductive layer 100a decreases approximately from the upper and lower middle regions towards the edges. The variation in thickness at different locations on the conductive layer 100a is similar to the variation in voltage at different locations on the conductive layer 100a and the variation in transmittance at different locations on the functional layer 200. That is, adjusting the thickness at different locations on the conductive layer 100a can, to some extent, increase the voltage difference at different locations on the conductive layer 100a and increase the difference in light transmittance at different locations on the functional layer 200.

[0187] When a conductive layer of uneven thickness is set on an optical device, the overall transmittance of the functional layer of the optical device to imaging light and the transmittance of different areas can be adjusted by applying different voltages or currents to different electrodes of the conductive layer. The following example illustrates this.

[0188] Taking the aforementioned optical device 30a as an example, and referring to Figure 26, when the voltage difference between different electrodes of conductive layer 100a and conductive layer 100b is 0, as shown in schematic diagram 30-1 of Figure 30, the transmittance of functional layer 200 to imaging light is approximately 100%; as shown in schematic diagram 30-2 of Figure 30, when the voltage difference between different electrodes of conductive layer 100a and conductive layer 100b is V1, the transmittance of functional layer 200 to imaging light is approximately 50%; as shown in schematic diagram 30-3 of Figure 30, when the voltage difference between different electrodes of conductive layer 100a and conductive layer 100b is 2×V1, the transmittance of functional layer 200 to imaging light is approximately 0.01%.

[0189] For ease of explanation, the following designations are used: Q1 is the voltage difference applied between electrode 101-1 of conductive layer 100a and the corresponding electrode on conductive layer 100b; Q2 is the voltage difference applied between electrode 101-2 of conductive layer 100a and the corresponding electrode on conductive layer 100b; Q3 is the voltage difference applied between electrode 101-3 of conductive layer 100a and the corresponding electrode on conductive layer 100b; and Q4 is the voltage difference applied between electrode 101-4 of conductive layer 100a and the corresponding electrode on conductive layer 100b. The light transmittance of functional layer 200 near electrode 101-2 of conductive layer 100a is K1; the light transmittance of the left side of the middle region in the width direction (direction D3) of functional layer 200 is K2; the light transmittance of the right side of the middle region in the width direction (direction D3) of functional layer 200 is K3; and the light transmittance of functional layer 200 near electrode 101-4 of conductive layer 100a is K4. Table 1 below roughly shows how the imaging light transmittance of functional layer 200 changes with the voltage difference between different regions between conductive layer 100a and conductive layer 100b.

[0190] Table 1

[0191] Referring to Table 1 and comparing schematic diagrams 31-1 to 31-4 in Figure 31, the greater the voltage difference Q2 applied between the electrode 101-2 of conductive layer 100a and the corresponding electrode on conductive layer 100b, the smaller the light transmittance K2 of functional layer 200 near the position corresponding to the electrode 101-2 of conductive layer 100a; the greater the difference between the voltage difference Q2 applied between the electrode 101-2 of conductive layer 100a and the corresponding electrode on conductive layer 100b and the voltage difference Q1 applied between the electrode 101-1 of conductive layer 100a and the corresponding electrode on conductive layer 100b, the more obvious the change in transmittance between the end of functional layer 200 near electrode 101-2 of conductive layer 100a and the middle region in the width direction (direction D3) of functional layer 200.

[0192] Referring to schematic diagram 31-5 in Figure 31, by way of example, when Q1 = 0, Q2 = Q4 = 0.5 × V2, and Q3 = V2, the light transmittance at different positions on the functional layer 200 generally decreases from left to right.

[0193] Referring to schematic diagram 31-6 in Figure 31, by way of example, when Q1 = V2, Q2 = 0.5 × V2, Q3 = 2 × V2, and Q4 = 3 × V2, the light transmittance at different positions on the functional layer 200 gradually decreases from the upper left corner to the lower right corner.

[0194] Referring to schematic diagram 31-7 in Figure 31, by way of example, when Q1=Q3=V2 and Q2=Q4=0.5×V2, the light transmittance at different positions on the functional layer 200 generally decreases gradually from the middle region in the width direction to the upper and lower parts.

[0195] Conductive layers 100a and 100b can be provided with more electrodes to achieve more precise control over the imaging light transmittance of different regions on the functional layer 200. For example, compared to the case in schematic diagram 31-7 where only electrode 101-1 is provided in the middle region of the left edge of conductive layer 100a and only electrode 101-3 is provided in the middle region of the right edge, two electrodes can be provided alternately in the middle region of the left edge of conductive layer 100a, and two electrodes can also be provided in the middle region of the right edge of conductive layer 100a. In this case, the voltage distribution between the two electrodes on the left edge and the two electrodes on the right edge of conductive layer 100a in the width direction can be controlled more finely. Correspondingly, the width of the low light transmittance portion of the middle region in the width direction of functional layer 200 in schematic diagram 31-8 can be larger than the width of the low light transmittance portion of the middle region in the width direction of functional layer 200 in schematic diagram 31-7.

[0196] Taking the optical device shown in schematic diagram 21-2 of Figure 21 above as an example, and referring to Figure 27, for ease of explanation, the following are referred to as: the voltage difference applied between electrode 101-1 of conductive layer 100a and the corresponding electrode on conductive layer 100b, the voltage difference applied between electrode 101-2 and the corresponding electrode on conductive layer 100b, the voltage difference applied between electrode 101-3 and the corresponding electrode on conductive layer 100b, the voltage difference applied between electrode 101-4 and the corresponding electrode on conductive layer 100b, the voltage difference applied between electrode 101-5 and the corresponding electrode on conductive layer 100b, the voltage difference applied between electrode 101-6 and the corresponding electrode on conductive layer 100b, the voltage difference applied between electrode 101-7 and the corresponding electrode on conductive layer 100b, and the voltage difference applied between electrode 101-8 and the corresponding electrode on conductive layer 100b, respectively, as Q1, Q2, Q3, Q4, Q5, Q6, Q7, and Q8. Table 2 provides examples of several values ​​for the aforementioned voltage differences Q1 to Q8.

[0197] Table 2

[0198] Figure 32, schematic diagrams 32-1 to 32-3, roughly illustrate the distribution of light transmittance in different regions of the functional layer within the optical device when the optical device is powered according to value methods 1 to 5 in Table 2. In Figure 32, the bright lines in each schematic diagram can be roughly regarded as connecting lines of various parts of the functional layer with a light transmittance of 50%. In some scenarios, this bright line can serve as a characteristic line of the transmittance of the functional layer to imaging light.

[0199] When the voltage difference between the conductive layers on the upper and lower sides of the functional layer is determined according to the value selection method 1 in Table 2, as shown in Schematic Diagram 32-1, the feature line is roughly parallel to direction D1. In other words, the transmittance of the functional layer for imaging light decreases roughly from bottom to top.

[0200] When the voltage difference between the conductive layers on the upper and lower sides of the functional layer is determined according to the value of method 2 in Table 2, as shown in Schematic 32-2, the feature line forms an angle of approximately 45° with direction D1. In other words, the transmittance of the functional layer for imaging light decreases approximately from the lower left to the upper right.

[0201] When the voltage difference between the conductive layers on the upper and lower sides of the functional layer is determined according to the value of method 3 in Table 2, as shown in Schematic 32-3, the feature line forms an angle of approximately 90° with direction D1. In other words, the transmittance of the functional layer for imaging light decreases approximately from left to right.

[0202] Based on the above example, by adjusting the voltage difference between different electrodes of the conductive layer of the optical device, the transmittance of imaging light to different regions of the functional layer located between the two conductive layers can be controlled.

[0203] Figure 33 roughly illustrates the effect of a photograph taken using the lens module with optical element 30 provided in this application (e.g., camera module 14 or camera module 15 in Figure 1). Schematic diagram 33-1 in Figure 33 shows a photograph of scene 1 taken using a lens module without optical element 30. Due to the significant brightness difference between the sky and the lake surface in scene 1, details such as the clouds in the sky cannot be captured by the camera. Schematic diagram 33-2 in Figure 33 shows a photograph of scene 1 taken using the lens module with optical element 30 provided in this application. By adjusting the light transmittance of the sky in scene 1 using the optical element, the sky is prevented from being overexposed, thus preserving details such as the clouds.

[0204] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An optical device (30) characterized by, The optical device (30) comprises: a first conductive layer (100a), a functional layer (200) and a second conductive layer (100b), the functional layer (200) is located between the first conductive layer (100a) and the second conductive layer (100b), the first conductive layer (100a) and the second conductive layer (100b) are respectively electrically connected to different electrodes to form an electric field in the functional layer (200), and the functional layer (200) is configured to change in light transmittance in response to a change in the electric field; a first part of the first conductive layer (100a) has a different thickness from a second part of the first conductive layer (100a).

2. The optical device (30) according to claim 1, characterized in that The first conductive layer (100a) comprises a first surface and a second surface oppositely arranged along the thickness direction, and the first surface and / or the second surface is a continuous smooth curved surface.

3. The optical device (30) according to claim 2, characterized in that The first surface faces the functional layer (200), the first surface is a continuous smooth curved surface, and the second surface is a plane.

4. The optical device (30) according to claim 2 or 3, characterized in that The thickness of the first conductive layer (100a) gradually decreases from the middle to both sides along a first direction, or the thickness of the first conductive layer (100a) gradually increases from the middle to both sides along the first direction.

5. The optical device (30) according to claim 4, characterized in that The first conductive layer (100a) comprises a first cross section perpendicular to the first direction, and the upper boundary intersecting the first surface and the lower boundary intersecting the second surface of the first cross section are parallel to each other.

6. The optical device (30) according to any one of claims 1 to 5, characterized in that The maximum thickness h1 of the first conductive layer (100a) and the minimum thickness h2 of the first conductive layer (100a) satisfy:

7. The optical device (30) according to any one of claims 1 to 6, characterized in that The optical device (30) further comprises a first electrode group and a second electrode group, the first electrode group and the second electrode group each comprise M electrodes, M is an integer greater than or equal to 2, the M electrodes in the first electrode group are arranged at intervals and are electrically connected to the first conductive layer (100a), and the M electrodes in the second electrode group are arranged correspondingly to the M electrodes in the first electrode group, and the M electrodes in the second electrode group are electrically connected to the second conductive layer (100b); an electric field can be formed between any electrode in the first electrode group and the electrode arranged correspondingly in the second electrode group.

8. The optical device (30) according to claim 7, characterized in that The M electrodes in the first electrode group are uniformly distributed on the outer periphery of the first conductive layer (100a).

9. The optical device (30) according to claim 8, characterized in that The first electrode group comprises a first electrode and a second electrode, the first electrode and the second electrode are located at two opposite ends of the first conductive layer (100a) and are located at positions of maximum thickness of the first conductive layer (100a).

10. The optical device (30) according to any one of claims 1 to 9, characterized in that, The optical device (30) further comprises a first fixing sheet (300a) and a second fixing sheet (300b), one side of the first conductive layer (100a) away from the second conductive layer (100b) is fixedly connected to the first fixing sheet (300a), and one side of the second conductive layer (100b) away from the first conductive layer (100a) is fixedly connected to the second fixing sheet (300b).

11. The optical device (30) according to claim 10, characterized in that The first conductive layer (100a) is a film-shaped structure coated on one side of the first fixed sheet (300a) facing the second fixed sheet (300b), and the second conductive layer (100b) is a film-shaped structure coated on one side of the second fixed sheet (300b) facing the first fixed sheet (300a).

12. The optical device (30) according to claim 10 or 11, characterized in that The optical device (30) further comprises a side wall (400), and the side wall (400), the first fixed sheet (300a) and the second fixed sheet (300b) form an enclosed space.

13. A lens module, characterized by, The lens module comprises a lens (40), a photosensitive element (50) and the optical device (30) according to any one of claims 1 to 12.

14. The lens module according to claim 13, wherein, The optical device (30) is located between the lens (40) and the photosensitive element (50).

15. The lens module according to claim 14, wherein, The lens module further comprises an infrared cut filter, and the infrared cut filter is located between the lens (40) and the photosensitive element (50), and the fixed sheet of the optical device (30) is included in the infrared cut filter.

16. The lens module according to claim 15, wherein, No other device is included between the optical device (30) and the photosensitive element (50).

17. The lens module according to claim 13, wherein, The optical device (30) is located on the side of the lens (40) away from the photosensitive element (50).

18. The lens module according to claim 17, wherein, The lens module further comprises a lens cover plate, and the lens cover plate comprises the fixed sheet of the optical device (30) on the side away from the lens (40).

19. The lens module according to claim 13, wherein, The number of the lens (40) is multiple, and the optical device (30) is located between multiple lens (40).

20. An electronic device, comprising: The lens module comprises: The lens module and the battery module are electrically connected.

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