Semiconductor device and manufacturing method therefor, and electronic device

Abstract

A semiconductor device and a manufacturing method therefor, and an electronic device. The manufacturing method comprises: providing a first substrate and a second substrate (131); forming a pressure test cavity structure in the first substrate, wherein the pressure test cavity structure comprises a sensitive diaphragm perpendicular to a surface of the first substrate; forming a temperature sensor (140) in the second substrate (131); and joining the side of the first substrate on which the pressure test cavity structure is formed to the side of the second substrate (131) facing away from the temperature sensor (140), and making the position of the temperature sensor (140) correspond to the position of the pressure test cavity structure. By means of the vertical arrangement of the sensitive diaphragm, the temperature sensor is not affected by lateral deformation of the sensitive diaphragm, and the temperature sensor is positioned corresponding to the pressure test cavity structure, thereby improving the temperature measurement accuracy of the temperature sensor for a pressure test cavity region and improving the measurement accuracy of a pressure sensor.

Description

Semiconductor device, manufacturing method thereof and electronic device

[0001] Related applications

[0002] The present application claims priority to the Chinese patent application No. 2024109952028, filed on July 23, 2024, entitled "Semiconductor device, manufacturing method thereof and electronic device", the contents of which are hereby incorporated by reference in its entirety. TECHNICAL FIELD

[0003] The present application relates to the technical field of semiconductor, in particular to a semiconductor device, a manufacturing method thereof and an electronic device. BACKGROUND

[0004] The basic principle of MEMS (Micro-Electro-Mechanical System) capacitive pressure sensor is to measure pressure by using the change of capacitance. It includes a movable diaphragm and two fixed electrodes. When the diaphragm is subjected to pressure, it will deform, causing the capacitance between the two electrodes to change.

[0005] MEMS capacitive pressure sensor is susceptible to changes in ambient temperature, which causes changes in the properties of MEMS materials, thereby directly reducing the detection accuracy of the MEMS chip. The main solution is to place a temperature sensor in the MEMS capacitive pressure sensor, continuously measure the ambient temperature during MEMS operation, and then compare it with the previously calibrated temperature-performance software for adjustment and correction, and perform algorithm compensation to improve test accuracy.

[0006] However, since the temperature sensor is susceptible to deformation, and the conventional sensitive membrane is placed horizontally, the sensitive membrane realizes longitudinal pressure sensing through up-down deformation. In order to avoid the influence of the up-down deformation of the sensitive membrane on the temperature sensor, the temperature sensor cannot be placed in the middle area of the chip (which is usually the pressure test cavity area), but can only be placed in the non-pressure test cavity area, which makes the temperature sensor far away from the pressure test cavity area, resulting in distortion of the temperature measurement of the pressure test cavity area.

[0007] In view of the above technical problems, the present application provides a new semiconductor device, a manufacturing method thereof and an electronic device. SUMMARY

[0008] A series of simplified concepts are introduced in the summary section, which will be further described in detail in the specific embodiment section. The summary section of the present application does not mean to attempt to limit the key features and necessary technical features of the claimed technical solution, nor to attempt to determine the protection scope of the claimed technical solution.

[0009] To solve the above problems, the present application provides a semiconductor device manufacturing method, comprising:

[0010] providing a first substrate and a second substrate;

[0011] forming a pressure test cavity structure in the first substrate; wherein the pressure test cavity structure comprises a sensitive membrane perpendicular to the surface of the first substrate;

[0012] forming a temperature sensor in the second substrate;

[0013] joining the side of the first substrate with the pressure test cavity structure to the side of the second substrate away from the temperature sensor, and making the position of the temperature sensor correspond to the position of the pressure test cavity structure.

[0014] In some embodiments of the present application, the pressure test cavity structure comprises at least one support column and at least one sensitive membrane, and the support column and the sensitive membrane are arranged in intervals, wherein a pressure test cavity is formed between adjacent support columns and sensitive membranes, and the pressure test cavity structure comprises at least one pressure test cavity.

[0015] In some embodiments of the present application, the manufacturing method further comprises:

[0016] forming a conductive layer on the side wall of the support column facing the pressure test cavity and on the side wall of the sensitive membrane facing the pressure test cavity, respectively.

[0017] In some embodiments of the present application, at least one first bending structure is formed on the sensitive membrane.

[0018] In some embodiments of the present application, the manufacturing method further comprises:

[0019] forming at least one anti-adhesion bump on the side of each first bending structure protruding outward.

[0020] In some embodiments of the present application, a second bending structure corresponding to the position of each first bending structure is formed on the side wall of the support column; wherein the bending direction of the first bending structure and the bending direction of the second bending structure are the same or opposite.

[0021] In some embodiments of the present application, the first bending structure and the second bending structure are both rectangular bending structures.

[0022] In some embodiments of the present application, a second bending structure corresponding to each first bending structure and at least one anti-blocking bump position on the side surface of the outward protrusion of each first bending structure is configured on the side wall of the support column; wherein the protruding direction of the anti-blocking bump is the same as or opposite to the bending direction of the second bending structure.

[0023] In some embodiments of the present application, the at least one anti-blocking bump is a triangular-shaped bump.

[0024] In some embodiments of the present application, the temperature sensor comprises an ion implantation resistance temperature sensor, and the forming of the temperature sensor in the second substrate comprises:

[0025] performing a first ion implantation in the second substrate to form a first well region in the second substrate;

[0026] performing a second ion implantation in the first well region to form a second well region in the first well region;

[0027] performing a third ion implantation in the second well region to form a third well region in the second well region;

[0028] performing a fourth ion implantation in the first well region to form a fourth well region spaced apart from the second well region in the first well region; wherein the ion implantation resistance temperature sensor comprises the first well region, the second well region, the third well region and the fourth well region.

[0029] In some embodiments of the present application, the first ion and the fourth ion are the same type of ion, the second ion and the third ion are the same type of ion, and the ion type of the first ion and the fourth ion is different from the ion type of the second ion and the third ion.

[0030] In some embodiments of the present application, the manufacturing method further comprises:

[0031] forming at least one ventilation channel in at least one of the first substrate and the second substrate, wherein each ventilation channel is in communication with one pressure test cavity respectively, or in communication with the empty area on one side of one pressure test cavity.

[0032] In some embodiments of the present application, the side of the first substrate formed with the pressure test cavity structure is bonded to the side of the second substrate away from the temperature sensor by a hybrid bonding process.

[0033] In still another aspect of the present application, a semiconductor device is provided, which is prepared by using any one of the above-mentioned semiconductor device manufacturing methods.

[0034] The electronic device according to an aspect of the present application includes the semiconductor device described above.

[0035] The details of one or more embodiments of the application are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the application will be apparent from the description and drawings, and from the claims. BRIEF DESCRIPTION OF DRAWINGS

[0036] The following drawings are included herewith to provide a better understanding of the present application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application.

[0037] In the drawings:

[0038] FIG. 1 shows a flow chart of a method for manufacturing a semiconductor device according to an embodiment of the present application;

[0039] FIGS. 2A to 2C show cross-sectional views of a structure obtained by sequentially performing a method for manufacturing a semiconductor device according to an embodiment of the present application;

[0040] FIGS. 3A to 3C show cross-sectional views of another structure obtained by sequentially performing a method for manufacturing a semiconductor device according to an embodiment of the present application;

[0041] FIGS. 4A to 4B show cross-sectional views of a structure obtained by sequentially performing a method for manufacturing a semiconductor device according to an embodiment of the present application;

[0042] FIGS. 5A to 5B show cross-sectional views of a structure obtained by sequentially performing a method for manufacturing a semiconductor device according to another embodiment of the present application;

[0043] FIG. 6 shows a partial enlarged view of FIG. 4A;

[0044] FIG. 7 shows a plan view of FIG. 4B;

[0045] FIG. 8 shows a cross-sectional view of an ion-implanted resistance temperature sensor according to an embodiment of the present application;

[0046] FIG. 9 shows a schematic view of an electronic device according to an embodiment of the present application. DETAILED DESCRIPTION

[0047] In the following description, numerous specific details are given to provide a thorough understanding of the application. However, it will be apparent that the application can be practiced without one or more of the specific details. In other instances, well-known features are not described in order to avoid obscuring the application.

[0048] It is to be understood that the application can assume various alternative embodiments, and that no limitation of the scope of the present application is intended by the description or illustration of the embodiments. Further, each of the embodiments can be used alone or in combination with one another. Regardless of the particular combination of embodiments, the application is intended to cover and embrace all suitable processes, systems, compositions, and articles of manufacture. In the drawings, the size and relative sizes of layers and regions can be exaggerated for clarity. Like reference numerals can represent like elements throughout the drawings.

[0049] It will be understood that when an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on or connected to the other element or layer or intervening elements or layers can be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements or layers present. It will also be understood that, when a term is used in the singular, it can be intended to mean the singular or plural, unless the context clearly dictates otherwise.

[0050] Spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0051] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein the term "and / or" includes any and all combinations of associated items.

[0052] For a thorough understanding of the present application, reference will be made to the following detailed description taken in conjunction with the accompanying drawings, in which:

[0053] Since the temperature sensor is susceptible to deformation, and the conventional sensitive membrane is horizontally placed, the sensitive membrane realizes longitudinal pressure sensing through up and down deformation. In order to avoid the influence of the up and down deformation of the sensitive membrane on the temperature sensor, the temperature sensor cannot be arranged in the middle region of the chip (the middle region of the chip is usually the pressure test cavity region), but can only be arranged in the non-pressure test cavity region, which makes the temperature sensor far away from the pressure test cavity region, resulting in distortion of the temperature measurement of the pressure test cavity region.

[0054] Therefore, in view of the foregoing technical problems, the present application provides a manufacturing method of a semiconductor device, as shown in FIG. 1, comprising:

[0055] Step S1, providing a first substrate and a second substrate;

[0056] Step S2, forming a pressure test cavity structure in the first substrate; wherein the pressure test cavity structure comprises a sensitive membrane perpendicular to the surface of the first substrate;

[0057] Step S3, forming a temperature sensor in the second substrate;

[0058] Step S4, joining the side of the first substrate formed with the pressure test cavity structure with the side of the second substrate away from the temperature sensor, and making the position of the temperature sensor correspond to the position of the pressure test cavity structure.

[0059] The manufacturing method of the semiconductor device provided by the application sets the sensitive film vertically, and the sensitive film realizes lateral pressure sensing through lateral deformation, the temperature sensor is not affected by the lateral deformation of the sensitive film, so that the temperature sensor can be set at a position corresponding to the structure of the pressure test cavity, the temperature measurement accuracy of the temperature sensor on the pressure test cavity area is improved, accurate temperature measurement data is provided for the temperature calibration program, and the measurement accuracy of the pressure sensor is greatly improved.

[0060] Embodiment one

[0061] Hereinafter, the manufacturing method of the semiconductor device of the application will be described in detail with reference to FIGS. 2A to 8, wherein FIGS. 2A to 8 show cross-sectional schematic views of the semiconductor device obtained by sequentially implementing the manufacturing method in some embodiments of the application.

[0062] Exemplarily, the manufacturing method of the semiconductor device of the application comprises the following steps:

[0063] Firstly, step one is performed to provide a first substrate and a second substrate 131.

[0064] The first substrate and the second substrate 131 can be any suitable semiconductor substrate, for example, a bulk silicon substrate, which can also be at least one of the following materials: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductor, also including a multilayer structure composed of these semiconductors, etc., or a silicon-on-insulator (SOI), a silicon-on-silicon-on-insulator (SSOI), a silicon-on-silicon germanium-on-insulator (S-SiGeOI), a silicon germanium-on-insulator (SiGeOI) and a germanium-on-insulator (GeOI), or can also be a double side polished wafer (DSP), and can also be a ceramic substrate such as aluminum oxide, a quartz or glass substrate, etc.

[0065] In some embodiments, as shown in FIG. 2B, the first substrate can comprise a substrate layer 111 and an epitaxial layer 112. Optionally, the substrate layer 111 has a relatively high doping concentration, while the epitaxial layer 112 has a relatively low doping concentration; in other words, the doping concentration of the substrate layer 111 is higher than that of the epitaxial layer 112. The epitaxial layer 112 can serve as a drift region of the device.

[0066] The epitaxial layer 112 can be formed on the substrate layer 111 shown in FIG. 2A by an epitaxial growth process such as vapor phase epitaxy, liquid phase epitaxy and molecular beam epitaxy, etc., to obtain the first substrate in FIG. 2B. The material of the epitaxial layer 112 can be the same as or different from that of the substrate layer 111. Exemplarily, the epitaxial layer 112 is made of any suitable material such as polysilicon.

[0067] Exemplarily, FIG. 3A shows a schematic view of a cross section of the second substrate 131.

[0068] Next, step two is performed, as shown in FIG. 2C, to form a pressure test cavity structure in the first substrate; wherein the pressure test cavity structure comprises a sensitive membrane perpendicular to the surface of the first substrate.

[0069] When the first substrate comprises a substrate layer 111 and an epitaxial layer 112, the pressure test cavity structure can be formed in the epitaxial layer 112.

[0070] In addition, the pressure test cavity structure can comprise one pressure test cavity, two pressure test cavities, or a larger number of pressure test cavities, without limitation.

[0071] In some embodiments, the pressure test cavity structure comprises at least one support column 121 and at least one sensitive membrane, the support column 121 and the sensitive membrane being spaced apart, wherein a pressure test cavity is formed between adjacent support columns 121 and sensitive membranes.

[0072] Taking the case of two pressure test cavities being formed in the pressure test cavity structure as an example, as shown in FIG. 2C, the pressure test cavity structure can comprise a support column 121 and a first sensitive membrane 122 and a second sensitive membrane 123 located on both sides of the support column 121, the first sensitive membrane 122 and the second sensitive membrane 123 being spaced apart from the support column 121, a first pressure test cavity 124 being formed between the first sensitive membrane 122 and the support column 121, and a second pressure test cavity 125 being formed between the second sensitive membrane 123 and the support column 121. The spacing distance between the first sensitive membrane 122 and the support column 121 can be the same as or different from the spacing distance between the second sensitive membrane 123 and the support column 121.

[0073] For a conventional pressure sensor, since it only has one pressure test cavity, two chips are required to measure two pressure values respectively when measuring the pressure difference value, and then the pressure difference value is obtained by subtracting the two pressure values. In the present embodiment, by forming two pressure test cavities in the first substrate, the two pressure test cavities can measure and output one pressure value respectively, so that the measurement of the pressure difference value can be realized by a single chip, which has obvious efficiency improvement. Of course, it can be understood that when a larger number of pressure test cavities are formed in the pressure test cavity structure, a larger number of pressure values can be measured, which will not be described herein again.

[0074] In some embodiments, the pressure test cavity structure comprising two pressure test cavities can be formed in the first substrate by the following steps S211-S212.

[0075] Step S211: forming a groove in the first substrate.

[0076] Specifically, the groove can be formed in the first substrate by dry etching or wet etching, which is not limited. Taking wet etching as an example, a photoresist mask layer can be formed on the first surface of the first substrate, and the photoresist mask layer is patterned by exposure, development and other processes to form a mask layer defining the groove to be formed. Then, the first substrate with the mask layer on the first surface can be placed in an etchant solution, and the etchant reacts with the first substrate to remove a portion of the material in the first substrate that is not shielded by the mask layer, thereby forming a groove in the first substrate. Then, the mask layer on the first substrate can be removed by a developing solution.

[0077] In step S212, at least one support column 121 and at least one sensitive film are simultaneously formed in the groove, and the support column 121 and the sensitive film are spaced apart to form a pressure test cavity between adjacent support columns 121 and sensitive films.

[0078] Specifically, at least one support column 121 and at least one sensitive film can be simultaneously formed in the groove by deposition and etching, and the formed support column 121 and sensitive film are spaced apart, and the support column 121 and the sensitive film are also perpendicular to the surface of the first substrate, so that the sensitive film can realize lateral pressure sensing through left and right deformation, and avoid affecting the pressure sensor located above the pressure test cavity area.

[0079] Moreover, the conventional horizontally placed sensitive film is prone to particle drop during use. In this embodiment, by vertically arranging the sensitive film, the risk of particle drop is reduced, greatly improving the reliability of the semiconductor device, including overload capacity and particle resistance.

[0080] In some embodiments, as shown in FIG. 2C, a conductive layer 126 can also be formed on the side arm of the support column 121 facing the pressure test cavity and on the side arm of the sensitive film facing the pressure test cavity, respectively. The material of the conductive layer 126 includes but is not limited to Cu, Au, Al, Pt and other metals, which is not limited.

[0081] Specifically, for the support column 121, the conductive layer 126 can be formed on both left and right sides; for the sensitive film, the conductive layer 126 can be formed on only one side, and of course, the conductive layer 126 can also be formed on both sides, which is not limited. In this embodiment, by forming the conductive layer 126 on the side of the support column 121 and the side of the sensitive film respectively, when the sensitive film deforms, the distance between the conductive layer 126 on the sensitive film and the conductive layer 126 on the support column 121 changes, and the distance between the two conductive layers 126 changes, which causes the capacitance to change, and then the corresponding capacitance value can be output through the wire connected to the conductive layer 126, and the pressure value can be reflected through the capacitance value.

[0082] Exemplarily, FIG. 7 shows the positions of the pressure and temperature lead-out pins 161 in the prepared semiconductor device, and the wires are connected with the pressure and temperature lead-out pins 161 to output corresponding electrical signals.

[0083] In some embodiments, one or more first bending structures can be constructed on the sensitive film. When a plurality of first bending structures are constructed on the sensitive film, a wave-shaped structure can be formed.

[0084] The first bending structure can be a triangular bending, a rectangular bending, an arc-shaped bending, or any other suitable shape, which is not limited.

[0085] In the embodiment, by constructing the first bending structure on the sensitive film, the stress problem of the flat sensitive film can be effectively reduced compared with the conventional flat sensitive film, and in the pressure sensing deformation, the first bending structure can effectively improve the deformation uniformity, thereby greatly improving the output nonlinearity index, which is superior to the nonlinearity problem caused by the large center deformation and small edge deformation of the flat sensitive film.

[0086] In addition, for the sensitive film with the first bending structure, when placed horizontally, the first bending structure is prone to central collapse due to gravity. In the embodiment, by vertically arranging the sensitive film with the first bending structure, the central collapse caused by gravity can be effectively avoided, and the self-deformation resistance is superior to the horizontal arrangement.

[0087] In some embodiments, one or more second bending structures can be constructed on the side wall of the support column 121. When a plurality of second bending structures are constructed on the support column 121, a wave-shaped structure can be formed.

[0088] The second bending structure can be a triangular bending, a rectangular bending, an arc-shaped bending, or any other suitable shape, which is not limited.

[0089] In some embodiments, the shapes of the first bending structure and the second bending structure can be the same or different, which is not limited. Exemplarily, as shown in FIG. 2C, the first bending structure and the second bending structure can both be rectangular bendings.

[0090] In some embodiments, the number of the first bending structure and the second bending structure can be consistent or inconsistent, which is not limited.

[0091] In some embodiments, the positions of the first bending structures and the second bending structures can or can not correspond to each other, and no limitation is made in this regard. Taking the case where the positions of the first bending structures and the second bending structures correspond to each other as an example, for each first bending structure on the sensitive film, a second bending structure corresponding thereto is arranged on the side wall of the support column.

[0092] It is worth noting that the bending directions of the first bending structures and the second bending structures can be the same or opposite, and no limitation is made in this regard.

[0093] Exemplarily, as shown in FIG. 2C, a plurality of second bending structures can be constructed on the side wall of the support column 121, and a plurality of first bending structures can be constructed on the first sensitive film 122 and the second sensitive film 123. The specific forming process can be as follows:

[0094] The deposition and etching can be sequentially performed from bottom to top in the groove for multiple times, and through the cooperation of the deposition process and the etching process, repeated cycles are made to simultaneously form the support column 121 with a plurality of second bending structures constructed on the side wall, and the first sensitive film 122 and the second sensitive film 123 each with a plurality of second bending structures in the groove. The shapes of the first bending structures and the second bending structures are the same, the number of the first bending structures on the first sensitive film 122 is consistent with the number of the second bending structures on the left side edge of the support column 121, for each first bending structure on the first sensitive film 122, a second bending structure corresponding thereto is arranged at the same height position on the left side edge of the support column 121, and the bending direction of the first bending structure on the first sensitive film 122 is the same as the bending direction of the second bending structure on the left side edge of the support column 121; the number of the first bending structures on the second sensitive film 123 is consistent with the number of the second bending structures on the right side edge of the support column 121, for each first bending structure on the second sensitive film 123, a second bending structure corresponding thereto is arranged at the same height position on the right side edge of the support column 121, and the bending direction of the first bending structure on the second sensitive film 123 is opposite to the bending direction of the second bending structure on the right side edge of the support column 121.

[0095] In some embodiments, as shown in FIG. 2C, at least one anti-adhesion bump 127 can also be formed on the side surface of each first bending structure protruding outward. The anti-adhesion bump 127 can be formed by deposition and etching, and the specific process is not described herein.

[0096] In this embodiment, by forming at least one anti-adhesion bump 127 on the side surface of each first bending structure protruding outward, the sensitive film can be prevented from adhering to the side surface of the groove and / or the support column 121 when deformed, thereby avoiding the short circuit condition.

[0097] The anti-sticking protrusion 127 can be a triangular protrusion, a square protrusion, a cylindrical protrusion, or any other suitable shape, and is not limited in this regard. Preferably, the anti-sticking protrusion 127 can be a triangular protrusion, as shown in FIG. 6. Compared to other types of protrusions, the triangular protrusion has a smaller contact area with the groove and / or the side of the support column 121 when the sensitive film is deformed by an overload, and the recovery effect is better after the static electricity or overload is discharged due to the smaller contact area of the triangular protrusion.

[0098] An anti-sticking protrusion can be provided on the side of each first bending structure that protrudes outward, or a plurality of anti-sticking protrusions can be provided, and the number of anti-sticking protrusions is not limited in this regard. For example, as shown in FIG. 2C, one anti-sticking protrusion is formed on the first bending end and the second bending end of the side of each first bending structure that protrudes outward, i.e., two anti-sticking protrusions are formed on the side of each first bending structure that protrudes outward.

[0099] In some embodiments, the position of the anti-sticking protrusion on the side of each first bending structure can correspond to the position of the second bending structure, or can not correspond to the position of the second bending structure, and the number of anti-sticking protrusions is not limited in this regard. For example, as shown in FIG. 2C, for each first bending structure, a second bending structure corresponding to the first bending structure and the position of the anti-sticking protrusion on the first bending structure is formed on the side wall of the support column.

[0100] It is worth noting that the protruding direction of the anti-sticking protrusion can be the same as the bending direction of the second bending structure, or can be opposite to the bending direction of the second bending structure, and the number of anti-sticking protrusions is not limited in this regard. For example, as shown in FIG. 2C, the protruding direction of the anti-sticking protrusion on the first bending structure of the first sensitive film 122 is the same as the bending direction of the second bending structure on the left side of the support column 121, and the protruding direction of the anti-sticking protrusion on the first bending structure of the second sensitive film 123 is opposite to the bending direction of the second bending structure on the right side of the support column 121.

[0101] It is worth noting that although the triangular protrusion can also play an anti-sticking effect when provided on the groove and / or the support column 121, the sensitive film is easy to be damaged when deformed and stuck on the triangular protrusion. In the present embodiment, the triangular protrusion is provided on the sensitive film, so that the triangular protrusion can move with the sensitive film, thereby avoiding the triangular protrusion from damaging the sensitive film, and improving the use reliability. Of course, for other types of protrusions with a pointed end structure, similar beneficial effects can also be achieved by providing the protrusions on the sensitive film.

[0102] Next, step three is performed, and the temperature sensor 140 is formed in the second substrate 131, as shown in FIG. 3B.

[0103] The formed temperature sensor 140 can be a metal resistance temperature sensor, an ion implantation resistance temperature sensor, a chip resistance temperature sensor, or other types of temperature sensors, which are not limited.

[0104] Taking the ion implantation resistance temperature sensor as an example, the ion implantation resistance temperature sensor can be formed in the second substrate 131 through the following steps, specifically including:

[0105] Performing first ion implantation in the second substrate 131 to form a first well region 141 in the second substrate 131;

[0106] Performing second ion implantation in the first well region 141 to form a second well region 142 in the first well region 141;

[0107] Performing third ion implantation in the second well region 142 to form a third well region 143 in the second well region 142;

[0108] Performing fourth ion implantation in the first well region 141 to form a fourth well region 144 spaced from the second well region 142 in the first well region 141.

[0109] The formed ion implantation resistance temperature sensor can be as shown in FIG. 8, including the first well region 141, the second well region 142, the third well region 143, and the fourth well region 144.

[0110] The first ion and the fourth ion are the same type of ion, and the second ion and the third ion are the same type of ion. The ion type of the first ion and the fourth ion is different from the ion type of the second ion and the third ion. For example, the first ion and the fourth ion can be P-type ions, and the second ion and the third ion can be N-type ions; or the first ion and the fourth ion can be N-type ions, and the second ion and the third ion can be P-type ions, which are not limited. The P-type ion can include boron ions, aluminum ions, etc., and the N-type ion can include phosphorus ions, arsenic ions, etc., which are also not limited.

[0111] In this embodiment, by performing multiple ion implantations, a P / N structure can be formed, which is similar in principle to a BJT (bipolar junction transistor) structure or a Diode structure, and the terminal voltage drop changes with temperature, thereby measuring the temperature.

[0112] It is worth noting that there is no order between step two and step three, and the actual execution order of the two is not limited.

[0113] Then, step four is performed, as shown in FIG. 5A, the side of the first substrate on which the pressure test cavity structure is formed is joined to the side of the second substrate 131 that faces away from the temperature sensor 140, and the position of the temperature sensor 140 is made to correspond to the position of the pressure test cavity structure.

[0114] In the embodiment, the side of the first substrate on which the pressure test cavity structure is formed is joined to the side of the second substrate 131 that faces away from the temperature sensor 140 based on a hybrid bonding process, because the first substrate contains silicon and metal (for example, one or more of Cu, Au, Al, Pt, and the like). In contrast to a face-to-face bonding structure formed by traditional anodic bonding, silicon-silicon bonding, and the like, a point-to-face bonding structure can be formed by using the hybrid bonding process in the embodiment. Moreover, because of the limitations of the bonding materials, the hybrid bonding of metal and silicon materials cannot be completed with high yield by traditional anodic bonding and high-temperature bonding, and because of the high temperature, the properties and structural stress of the metal are difficult to effectively control, which greatly affects the test precision of the pressure sensor. The hybrid bonding used in the embodiment not only maintains the yield of the material bonding, but also improves the bonding strength and reliability, and greatly improves the production efficiency.

[0115] In some embodiments, at least one venting passage can also be formed in at least one of the first substrate and the second substrate 131, wherein each venting passage respectively communicates with one pressure test cavity, or with the empty area on one side of one pressure test cavity. By introducing air into the pressure test cavity or the empty area through the venting passage, and by exhausting air from the pressure test cavity or the empty area to the outside through the venting passage, the deformation of the sensitive membrane on one side of the pressure test cavity or the empty area can be caused, the distance between the conductive layer 126 on the sensitive membrane and the conductive layer 126 on the support column 121 corresponding thereto is changed, the distance between the two conductive layers 126 is changed, which causes the capacitance to change, and then the corresponding capacitance value can be output through the wire connected to the conductive layer 126, and the pressure value can be reflected through the capacitance value.

[0116] The ventilation channel can be formed by wet etching or dry etching. For example, the ventilation channel is formed in the substrate by wet etching, a photoresist mask layer is first formed on the surface of the substrate, the photoresist mask layer is patterned by exposure and development, and a mask layer defining the ventilation channel to be formed is formed. Then, the substrate with the mask layer on the surface is placed in an etchant solution such as KOH or TMAH, and the etchant reacts with the substrate to remove a portion of the material in the substrate that is not shielded by the mask layer, forming a ventilation channel in the substrate. The ventilation channel formed is inclined to the surface of the substrate, that is, the inner wall of the ventilation channel is a slope structure. For example, the ventilation channel is formed in the substrate by dry etching, a mask layer defining the ventilation channel to be formed is formed on the surface of the substrate in a similar manner, and then the surface of the substrate is bombarded by an ion beam to remove a portion of the material in the substrate that is not shielded by the mask layer, forming a ventilation channel in the substrate. The ventilation channel formed is perpendicular to the surface of the substrate.

[0117] For example, the first pressure test cavity 124 and the second pressure test cavity 125 are formed in the pressure test cavity structure, as shown in FIG. 3C, after the temperature sensor 140 is formed in the second substrate 131, a second ventilation channel 152 can be formed in the second substrate 131. After the side of the first substrate with the pressure test cavity structure is joined to the side of the second substrate 131 away from the temperature sensor 140, the second ventilation channel 152 formed is in communication with the empty area on one side of the second pressure test cavity 125. During the operation of the semiconductor device, the empty area is in communication with the second ventilation channel 152 to realize gas intake or exhaust, thereby causing the second sensitive membrane 123 to deform, the distance between the conductive layer 126 on the second sensitive membrane 123 and the conductive layer 126 on the right side of the support column 121 to change, the distance between the two conductive layers 126 to change, and the capacitance to change. In turn, the corresponding capacitance value can be output through the wire connected to the conductive layer 126, and the pressure value can be reflected through the capacitance value.

[0118] In addition, as shown in FIG. 4B, after the side of the first substrate with the pressure test cavity structure is joined to the side of the second substrate 131 away from the temperature sensor 140, a first ventilation channel 151 can be formed in the first substrate, and the first ventilation channel 151 formed is in communication with the first pressure test cavity 124. During the operation of the semiconductor device, the first pressure test cavity 124 is in communication with the first ventilation channel 151 to realize gas intake or exhaust, thereby causing the first sensitive membrane 122 to deform, the distance between the conductive layer 126 on the first sensitive membrane 122 and the conductive layer 126 on the left side of the support column 121 to change, the distance between the two conductive layers 126 to change, and the capacitance to change. In turn, the corresponding capacitance value can be output through the wire connected to the conductive layer 126, and the pressure value can be reflected through the capacitance value.

[0119] In some embodiments, as shown in FIG. 5A, the side of the first substrate away from the pressure test cavity structure can also be bonded with the circuit board 171.

[0120] In some embodiments, as shown in FIG. 5B, the semiconductor device obtained in FIG. 5A can also be packaged by a packaging shell 181. The packaging shell 181 and the circuit board 171 are provided with openings 191 for gas entry and exit.

[0121] It is worth mentioning that the order of the above steps is only an example, and the order of the above steps can also be changed or alternated, etc. without conflict.

[0122] So far, the key manufacturing method of the semiconductor device of the present application has been introduced. Other previous steps, intermediate steps or subsequent steps are required for the complete device manufacturing, which will not be described here.

[0123] In summary, the manufacturing method of the semiconductor device of the present application vertically sets the sensitive film, the sensitive film realizes lateral pressure sensing through left and right deformation, the temperature sensor 140 is not affected by the left and right deformation of the sensitive film, so that the temperature sensor 140 can be set at a position corresponding to the pressure test cavity structure, the temperature measurement accuracy of the temperature sensor 140 on the pressure test cavity area is improved, accurate temperature measurement data is provided for the temperature calibration program, and the measurement accuracy of the pressure sensor is greatly improved.

[0124] Embodiment Two

[0125] The present application also provides a semiconductor device, which can be prepared by the method in the foregoing embodiment one.

[0126] Next, the semiconductor device of the present application will be described and explained in detail with reference to FIG. 4B. It is worth mentioning that, in order to avoid repetition, the same parts and structures as in the foregoing embodiment one will only be simply explained, and the specific explanation and description can be referred to the description in embodiment one.

[0127] Specifically, as shown in FIG. 4B, the semiconductor device of the present application includes a first substrate and a second substrate 131, the first substrate is formed with a pressure test cavity structure, the second substrate 131 is formed with a temperature sensor 140, the side of the first substrate formed with the pressure test cavity structure is bonded with the side of the second substrate 131 away from the temperature sensor 140, and the position of the temperature sensor 140 corresponds to the position of the pressure test cavity structure; wherein the pressure test cavity structure includes a sensitive film perpendicular to the surface of the first substrate.

[0128] In some embodiments, the pressure test cavity structure is provided with at least one pressure test cavity.

[0129] In some embodiments, the pressure test cavity structure comprises at least one support column 121 and at least one sensitive membrane, the support column 121 and the sensitive membrane are arranged in a spaced manner, and a pressure test cavity is formed between adjacent support columns 121 and sensitive membranes.

[0130] In some embodiments, a conductive layer 126 is formed on the side of the support column 121 and the side of the sensitive membrane, respectively.

[0131] In some embodiments, at least one first bending structure is formed on the sensitive membrane.

[0132] In some embodiments, at least one anti-adhesion bump 127 is formed on the side of each first bending structure protruding outward.

[0133] In some embodiments, a second bending structure corresponding to the position of each first bending structure is formed on the side wall of the support column 121; wherein the bending direction of the first bending structure and the bending direction of the second bending structure are the same or opposite.

[0134] In some embodiments, a second bending structure corresponding to the position of each first bending structure and at least one anti-adhesion bump 127 on the side of each first bending structure protruding outward is formed on the side wall of the support column 121; wherein the protruding direction of the anti-adhesion bump 127 and the bending direction of the second bending structure are the same or opposite.

[0135] In some embodiments, the first substrate comprises a substrate layer 111 and an epitaxial layer 112, and the pressure test cavity structure is formed in the epitaxial layer 112.

[0136] In some embodiments, the temperature sensor 140 comprises a metal resistance temperature sensor, an ion implantation resistance temperature sensor, or a patch resistance temperature sensor. Taking the ion implantation resistance temperature sensor as an example, as shown in FIG. 8, the ion implantation resistance temperature sensor can comprise a first well region 141, a second well region 142, a third well region 143, and a fourth well region 144.

[0137] In some embodiments, the side of the first substrate on which the pressure test cavity structure is formed is combined with the side of the second substrate 131 away from the temperature sensor 140 based on a hybrid bonding process.

[0138] In some embodiments, at least one of the first substrate and the second substrate 131 is formed with at least one ventilation channel, wherein each ventilation channel is in communication with one pressure test cavity or one side of the pressure test cavity.

[0139] In some embodiments, the side of the first substrate away from the pressure test cavity structure is also bonded to the circuit board 171.

[0140] According to the semiconductor device of the present application, the method in embodiment one is adopted to obtain, by vertically arranging the sensitive film, the sensitive film realizes lateral pressure sensing through left-right deformation, the temperature sensor 140 is not affected by the left-right deformation of the sensitive film, so that the temperature sensor 140 can be arranged at a position corresponding to the pressure test cavity structure, the temperature measurement accuracy of the temperature sensor 140 on the pressure test cavity area is improved, accurate temperature measurement data is provided for the temperature calibration program, and the measurement accuracy of the pressure sensor is greatly improved.

[0141] Embodiment three

[0142] The present application also provides an electronic device in another embodiment, which comprises the semiconductor device prepared according to the method described above.

[0143] The electronic device of the present embodiment can be a mobile phone, a tablet computer, a notebook computer, a netbook, a game console, a television, a VCD, a DVD, a navigator, a digital photo frame, a camera, a camcorder, a recording pen, an MP3, an MP4, a PSP, or any other electronic product or device, or any intermediate product including a circuit. The electronic device of the present embodiment has better performance due to the use of the semiconductor device described above.

[0144] In the present embodiment, the mobile phone 400 is provided with a display portion 402, operation buttons 403, an external connection port 404, a speaker 405, a microphone 406, and the like, which are included in a housing 401.

[0145] In the present embodiment, the mobile phone 400 includes the semiconductor device described in embodiment two, and the description of the semiconductor device can be referred to embodiment two, which will not be repeated here.

[0146] The present application has been described by the above embodiments, but it should be understood that the above embodiments are only for the purpose of example and illustration, and are not intended to limit the present application to the described embodiments. In addition, those skilled in the art can understand that the present application is not limited to the above embodiments, and more variations and modifications can be made according to the teachings of the present application, which all fall within the scope of the present application. The scope of protection of the present application is defined by the attached claims and their equivalent scope.

Claims

1. A method for manufacturing a semiconductor device, comprising: providing a first substrate and a second substrate; forming a pressure test cavity structure in the first substrate; wherein the pressure test cavity structure comprises a sensitive membrane perpendicular to a surface of the first substrate; forming a temperature sensor in the second substrate; joining a side of the first substrate with the pressure test cavity structure to a side of the second substrate facing away from the temperature sensor, and making the position of the temperature sensor correspond to the position of the pressure test cavity structure.

2. The method of manufacturing a semiconductor device according to Claim 1, wherein the pressure test chamber structure includes at least one support column and at least one diaphragm, the support column and the diaphragm being disposed in spaced relation, wherein, a pressure test cavity is formed between the support column and the sensitive membrane, and the pressure test cavity structure is provided with at least one pressure test cavity. 3.The method for manufacturing a semiconductor device according to claim 2, further comprising: forming a conductive layer on the side wall of the support column facing the pressure test cavity and on the side wall of the sensitive membrane facing the pressure test cavity, respectively. 4.The method for manufacturing a semiconductor device according to any one of claims 1 to 2, wherein at least one first bending structure is configured on the sensitive membrane. 5.The method for manufacturing a semiconductor device according to claim 4, wherein the method further comprises: forming at least one anti-sticking bump on the side of each first bending structure protruding outward. 6.The method for manufacturing a semiconductor device according to claim 4, wherein a second bending structure corresponding to the position of each first bending structure is configured on the side wall of the support column; wherein the bending direction of the first bending structure and the bending direction of the second bending structure are the same or opposite. 7.The method for manufacturing a semiconductor device according to claim 6, wherein the first bending structure and the second bending structure are both rectangular bending structures.

8. The method for manufacturing a semiconductor device according to Claim 5, wherein a second bending structure corresponding to each first bending structure and the at least one anti-sticking bump on the side of each first bending structure protruding outward is configured on the side wall of the support column; wherein the protruding direction of the anti-sticking bump and the bending direction of the second bending structure are the same or opposite. 9.The method for manufacturing a semiconductor device according to claim 5, wherein the at least one anti-sticking bump is a triangular bump. 10.The method for manufacturing a semiconductor device according to claim 1, wherein the temperature sensor comprises an ion-implanted resistance temperature sensor, and the forming a temperature sensor in the second substrate comprises: performing a first ion implantation in the second substrate to form a first well region in the second substrate; performing a second ion implantation in the first well region to form a second well region in the first well region; performing a third ion implantation in the second well region to form a third well region in the second well region; performing a fourth ion implantation in the first well region to form a fourth well region spaced apart from the second well region in the first well region; wherein the ion-implanted resistance temperature sensor comprises the first well region, the second well region, the third well region and the fourth well region.

11. The method of claim 10, wherein the first ion and the fourth ion are the same type of ion, the second ion and the third ion are the same type of ion, and the type of ion of the first ion and the fourth ion is different from the type of ion of the second ion and the third ion.

12. The method of claim 2, wherein the method further comprises: forming at least one venting passage in at least one of the first substrate and the second substrate, wherein each of the venting passages is in communication with one of the pressure test cavities or with a void on one side of one of the pressure test cavities.

13. The method of claim 1, wherein the first substrate is bonded to the second substrate by a hybrid bonding process.

14. A semiconductor device prepared by the method of any one of claims 1 to 13.

15. An electronic device comprising the semiconductor device of claim 14. ​

Images