Substrate heat treatment apparatus, heat treatment method and coating and developing device

Abstract

Disclosed in the present application are a substrate heat treatment apparatus, a heat treatment method and a coating and developing device. The substrate heat treatment apparatus comprises: a cavity, a heating plate, a gas exchange mechanism and a control unit, the cavity being provided with a closable substrate conveying port, the heating plate being used for carrying and heating a substrate, and the gas exchange mechanism being used for performing gas intake and exhaust treatment on the cavity. The control unit is configured to: during heat treatment of a substrate, control the cavity to close the substrate conveying port, and control the gas exchange mechanism to feed a clean gas into the cavity and discharge gases in the cavity; during loading or unloading of the substrate, control the cavity to open the substrate conveying port; and, before and during the opening of the substrate conveying port, control the gas exchange mechanism to adjust the internal gas pressure of the cavity to be not less than the external gas pressure of the cavity. The present application achieves the effects of reducing the impact of impurity gases outside cavities on heat treatment of substrates, reducing surface defects of substrates, and improving the uniformity of surface film thickness of substrates.

Description

Substrate heat treatment apparatus, heat treatment method and coating and developing equipment Technical Field

[0001] This application relates to the field of semiconductor equipment, and further to a substrate heat treatment apparatus, heat treatment method, and coating and developing equipment. Background Technology

[0002] Currently, the inline setup for photolithography consists of a coating and developing machine and an exposure machine. The general process of photolithography is as follows: First, the substrate is sent to the coating and developing machine for coating treatment, and the coated substrate is then heat-treated (pre-baked); then, the coated and pre-baked substrate is sent to the exposure machine for exposure treatment, and the exposed substrate is then heat-treated (post-exposure baking); finally, the exposed and post-exposure baking substrate is returned to the coating and developing machine for development treatment, and the developed substrate is then heat-treated again (post-baked).

[0003] In the prior art, the above-mentioned heat treatment is usually carried out in a heat treatment apparatus (or heat treatment module). The heat treatment apparatus includes components such as a cavity, a hot plate, a substrate support mechanism, and an exhaust section. The hot plate and the substrate support mechanism are disposed inside the cavity. The substrate support mechanism is used to support the substrate, the hot plate is used to heat the substrate to perform heat treatment, and the exhaust section is used to discharge impurity gases from the cavity to prevent impurity gases from causing defects on the substrate surface.

[0004] For example, patent application number 201510916892.4 discloses a heat treatment apparatus and a heat treatment method, the technical solution of which is as follows: When a substrate is placed in a loading section within a processing container, and a coating film formed on the substrate is heat-treated by a heating section, venting is performed on the processing container through peripheral vents and a central vent. During periods of high fluidity of the coating film, venting can be achieved at least through the peripheral vents, and during periods of increased sublimation formation, venting can be achieved at least through the central vent. Therefore, a small venting volume can be achieved, leakage of sublimation to the outside of the processing container can be suppressed, and good in-plane uniformity of film thickness can be obtained.

[0005] During substrate heat treatment, impurity gases inside the chamber originate from two sources: sublimation of crosslinking agents and dispersed low-molecular-weight polymers contained in the film coated on the substrate surface, and impurity-laden air in the external environment. However, existing technologies typically focus on addressing the former's impact on the substrate during heat treatment, while neglecting the latter. Summary of the Invention

[0006] To address the aforementioned technical problems, the purpose of this application is to reduce the impact of impurity gases outside the cavity on the heat treatment of the substrate, reduce substrate surface defects, and improve the uniformity of film thickness on the substrate surface.

[0007] To achieve the above objectives, this application provides a substrate heat treatment apparatus, a heat treatment method, and a coating and developing device.

[0008] In some embodiments, the substrate heat treatment apparatus includes: a cavity having a closable substrate delivery port; a hot plate disposed within the cavity for supporting and heating the substrate; a ventilation mechanism for intake and exhaust of the cavity; and a control unit communicatively connected to the cavity, the hot plate, and the ventilation mechanism; wherein the control unit is configured to: during the heat treatment of the substrate, control the cavity to close the substrate delivery port and control the ventilation mechanism to supply clean gas into the cavity and exhaust gas from the cavity; during loading or unloading of the substrate, control the cavity to open the substrate delivery port, and before and during the opening of the substrate delivery port, control the ventilation mechanism to adjust the internal air pressure of the cavity to be not less than the external air pressure of the cavity.

[0009] In some embodiments, the substrate heat treatment method includes:

[0010] Step S10: The cavity opens the substrate delivery port and loads the substrate to be processed. Before and during the opening of the substrate delivery port, the ventilation mechanism adjusts the internal air pressure of the cavity to be no less than the external air pressure of the cavity.

[0011] In step S20, the cavity closes the substrate delivery port, the hot plate heats the substrate to be processed, and during the heat treatment of the substrate, the ventilation mechanism delivers clean gas into the cavity and discharges the gas in the cavity.

[0012] In step S30, the cavity opens the substrate delivery port to unload the substrate that has undergone heat treatment. Before and during the opening of the substrate delivery port, the ventilation mechanism adjusts the internal air pressure of the cavity to be no less than the external air pressure of the cavity.

[0013] In some embodiments, the coating and developing apparatus includes a front-end module, a process station, and an interface station connected in sequence. The process station includes: a substrate heat treatment unit, which is provided with a plurality of the aforementioned substrate heat treatment devices; a coating unit for coating the substrate; a developing unit for developing the substrate; and a transfer unit for transferring the substrate between the front-end module, the process station, and the interface station, and for transferring the substrate within the process station.

[0014] Compared with the prior art, this application adjusts the internal air pressure of the cavity to not less than the external air pressure of the cavity by controlling the ventilation mechanism through the control unit before and during the opening of the substrate conveying port of the substrate heat treatment apparatus. This prevents impurity gases in the external environment of the cavity from entering the cavity, reduces the impact of impurity gases outside the cavity on the substrate heat treatment, reduces substrate surface defects, and improves the uniformity of the film thickness on the substrate surface.

[0015] Overview of the attached figures

[0016] The features and performance of this application are further described by the following embodiments and accompanying drawings.

[0017] Figure 1 is a cross-sectional schematic diagram of a substrate heat treatment apparatus according to an embodiment of this application;

[0018] Figure 2 is a cross-sectional view of Figure 1 with the substrate delivery port open;

[0019] Figure 3 is a cross-sectional schematic diagram of a substrate heat treatment apparatus according to another embodiment of this application;

[0020] Figure 4 is a cross-sectional view of Figure 3 with the substrate delivery port open;

[0021] Figure 5 is a flowchart of a substrate heat treatment method according to an embodiment of this application; and

[0022] Figure 6 is a top view schematic diagram of a coating and developing apparatus according to an embodiment of this application.

[0023] Preferred embodiments of this application

[0024] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the specific implementation methods of this application will be described below with reference to the accompanying drawings. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings and other implementation methods can be obtained based on these drawings without creative effort.

[0025] To keep the drawings concise, each drawing only schematically shows the parts relevant to this application, and they do not represent the actual structure of the product. Furthermore, for ease of understanding, in some drawings, only one of the components with the same structure or function is schematically shown, or only one is labeled. In this document, "one" not only means "only one," but can also mean "more than one."

[0026] In this document, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0027] Furthermore, in the description of this application, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0028] As shown in Figures 1 and 2, this application discloses a substrate heat treatment apparatus 110. The substrate heat treatment apparatus 110 includes: a cavity 111, a hot plate 112, a ventilation mechanism 113, and a control unit 114.

[0029] Specifically, the cavity 111 is provided with a closable substrate delivery port 1111. A hot plate 112 is disposed within the cavity 111 for supporting and heating the substrate 20. A ventilation mechanism 113 is used to perform air intake and exhaust treatment on the cavity 111, thereby expelling impurity gases from the cavity 111 and preventing impurity gases from causing surface defects on the substrate 20. A control unit 114 is communicatively connected to the cavity 111, the hot plate 112, and the ventilation mechanism 113. The control unit 114 is configured as follows:

[0030] During the heat treatment of the substrate 20, referring to FIG1, the control unit 114 controls the cavity 111 to close the substrate delivery port 1111, and controls the ventilation mechanism 113 to deliver clean gas (e.g., nitrogen) into the cavity 111 and discharge the gas in the cavity 111.

[0031] During the loading or unloading of substrate 20, referring to FIG2, the control unit 114 controls the cavity 111 to open the substrate delivery port 1111, and before and during the opening of the substrate delivery port 1111, controls the ventilation mechanism 113 to adjust the internal air pressure of the cavity 111 to be no less than the external air pressure of the cavity 111. This prevents air containing impurities in the external environment from being drawn into the cavity 111 through the substrate delivery port 1111 when the substrate delivery port 1111 is opened because the internal air pressure of the cavity 111 is lower than the external air pressure of the cavity 111, thereby causing surface defects on the substrate 20.

[0032] Furthermore, in practical applications, the substrate heat treatment apparatus 110 is installed in a cleanroom (not shown in the figure). The cleanroom has the function of introducing clean gas into the cleanroom and then discharging the gas inside the cleanroom to maintain the cleanliness of the internal gas. Therefore, when the ventilation mechanism 113 adjusts the internal air pressure of the cavity 111 to be equal to the external air pressure of the cavity 111, air containing impurities in the external environment of the cavity 111 is more easily discharged by the cleanroom, thereby preventing it from being sucked into the cavity 111 through the substrate delivery port 1111. Moreover, by forming an air curtain above the edge of the hot plate 112 through the second exhaust port 1139 (described later), when the internal air pressure of the cavity 111 is equal to the external air pressure of the cavity 111, it can also prevent air containing impurities in the external environment of the cavity 111 from entering the cavity 111.

[0033] Preferably, the ventilation mechanism 113 includes an air supply section 1131 and an exhaust section 1132. The air supply section 1131 is used to supply clean gas into the cavity 111. The exhaust section 1132 is used to exhaust gas from the cavity 111. The control section 114 is configured to control the air supply section 1131 and the exhaust section 1132 before and during the opening of the substrate delivery port 1111, ensuring that the air intake of the cavity 111 is not less than the exhaust volume, and that the internal air pressure of the cavity 111 is not less than the external air pressure. This application achieves rapid adjustment of the internal air pressure of the cavity 111 by adjusting the air supply section 1131 and the exhaust section 1132 before the substrate delivery port 1111 is opened.

[0034] Preferably, the exhaust section 1132 includes an exhaust port 1134 and a vacuum pump 1135. The exhaust port 1134 is located above the hot plate 112 and connected to the vacuum pump 1135. The air supply section 1131 includes an air inlet 1136 and an air supply source 1137. The air inlet 1136 is connected to the air supply source 1137 and is used to supply clean gas to the cavity 111.

[0035] Preferably, the exhaust port 1134 includes a first exhaust port 1138 and a second exhaust port 1139. The first exhaust port 1138 is located above the center of the hot plate 112 and is used to exhaust the gas above the center of the hot plate 112. The second exhaust port 1139 is located above the edge of the hot plate 112 and is used to exhaust the gas above the edge of the hot plate 112. In addition, the air inlet 1136 is configured to be lower than the upper surface of the hot plate 112 and discharges clean gas upward through the annular gap between the edge of the hot plate 112 and the inner surface of the cavity 111. A portion of the clean gas is dispersed above the center of the hot plate 112 and is drawn in by the first exhaust port 1138. Another portion of the clean gas is dispersed above the edge of the hot plate 112 and is drawn in by the second exhaust port 1139. This forms an air curtain above the edge of the hot plate 112, further preventing impurities from outside the cavity 111 from entering the interior of the cavity 111 and diffusing above the substrate 20 and adhering to the upper surface of the substrate 20, thereby affecting the surface of the substrate 20.

[0036] Specifically, the first exhaust port 1138 is connected to the vacuum pump 1135 via the first exhaust pipe 1161, and the second exhaust port 1139 is connected to the vacuum pump 1135 via the second exhaust pipe 1162. A first regulating valve 1163 is provided on the first exhaust pipe 1161, and a second regulating valve 1164 is provided on the second exhaust pipe 1162. The control unit 114 is configured to control the exhaust unit 1132 to ensure that the exhaust volume of the second exhaust port 1139 is greater than the exhaust volume of the first exhaust port 1138 before and during the opening of the substrate delivery port 1111. Specifically, for example, the opening degree of the second regulating valve 1164 is controlled to be greater than that of the first regulating valve 1163 (assuming the diameters of the first exhaust pipe 1161 and the second exhaust pipe 1162 are the same), or the first regulating valve 1163 is closed while only the second regulating valve 1164 is opened. In this way, on the one hand, the second exhaust port 1139 is isolated from the impurity gas outside the cavity 111 during operation, and on the other hand, by reducing the exhaust volume of the first exhaust port 1138, the total exhaust volume of the first exhaust port 1138 and the second exhaust port 1139 is reduced, thereby reducing the power consumption of the equipment.

[0037] Preferably, the control unit 114 is configured such that during the heat treatment of the substrate 20, both the first regulating valve 1163 and the second regulating valve 1164 are in the open state, and the first exhaust port 1138 and the second exhaust port 1139 simultaneously draw air to keep the interior of the cavity 111 under negative pressure; during the loading or unloading of the substrate 20, the second regulating valve 1164 maintains its original opening, the first regulating valve 1163 is closed, and only the second exhaust port 1139 draws air, and the internal air pressure of the cavity 111 increases under the condition that the air intake of the air inlet 1136 remains unchanged or increases.

[0038] In addition, a guide plate 115 is provided above the hot plate 112, and the guide plate 115 has a cup-shaped structure with the opening facing downwards. The guide plate 115 has an exhaust hole 1151 at its center, which is connected to the first exhaust port 1138, for discharging gas above the center of the hot plate 112. An exhaust gap 1152 is provided between the edge of the guide plate 115 and the inner wall 1112 of the cavity 111, and the exhaust gap 1152 communicates with the second exhaust port 1139 for discharging gas above the edge of the hot plate 112.

[0039] Specifically, referring again to Figures 1 and 2, the cavity 111 includes: a bottom groove 1114, a cover plate 1113, and a lifting mechanism 1115. The bottom groove 1114 is used to accommodate the hot plate 112. The cover plate 1113 is liftably disposed above the bottom groove 1114, and the bottom edge of the cover plate 1113 cooperates with the top edge of the bottom groove 1114. The lifting mechanism 1115 is communicatively connected to the control unit 114 and is used to drive the cover plate 1113 to rise and fall. It should be noted that in other embodiments of this application, the bottom groove is liftably disposed below the cover plate, and the lifting mechanism is used to drive the bottom groove to rise and fall, or the lifting mechanism is used to drive the cover plate and the bottom groove to rise and fall.

[0040] As shown in Figure 2, during the loading or unloading of the substrate 20, the control unit 114 controls the lifting mechanism 1115 to drive the bottom groove 1114 and the cover plate 1113 to separate, so that a preset opening is formed between the cover plate 1113 and the bottom groove 1114, thereby forming the substrate transport port 1111, and the substrate transport port 1111 is in an open state. As shown in Figure 1, during the heat treatment of the substrate 20, the control unit 114 controls the lifting mechanism 1115 to drive the bottom groove 1114 and the cover plate 1113 to close, so that the bottom edge of the cover plate 1113 is in sealed contact with the top edge of the bottom groove 1114, and the substrate transport port 1111 is in a sealed state.

[0041] Preferably, the upper surface of the hot plate 112 is provided with a plurality of support members 1122 for supporting the substrate 20 during heat treatment, so that the lower surface of the substrate 20 and the upper surface of the hot plate 112 have a predetermined distance. Furthermore, the substrate heat treatment apparatus 110 also includes a substrate lifting mechanism 1121, which includes a plurality of ejector pins 1123 vertically penetrating the hot plate 112 and an ejector pin lifter 1124. The ejector pin lifter 1124 is used to drive the ejector pins 1123 to move up and down relative to the hot plate 112. Specifically, before loading or unloading the substrate 20, the ejector pin lifter 1124 drives the ejector pins 1123 upward until they are above the support members 1122, so that there is sufficient gap between the lower surface of the substrate 20 and the upper surface of the hot plate 112, allowing a robot arm to lift and place the substrate 20 from its lower surface.

[0042] As shown in Figures 3 and 4, a substrate heat treatment apparatus 110 according to an embodiment of this application is disclosed. The difference between this substrate heat treatment apparatus 110 and the above embodiment lies in the specific structure of the cavity 111. The other structures are similar and will not be described in detail here.

[0043] Specifically, the bottom groove 1118 and the cover plate 1119 are fixed relative to each other, and there is a preset distance between the bottom groove 1118 and the cover plate 1119 to form a substrate delivery port 1111. Furthermore, the cavity 111 includes a sealing member 1117 and a lifting mechanism 1116. The sealing member 1117 is movably disposed outside the substrate delivery port 1111 and cooperates with the substrate delivery port 1111 to seal the substrate delivery port 1111. The lifting mechanism 1116 is communicatively connected to the control unit 114 and is used to drive the sealing member 1117 to move.

[0044] As shown in Figure 3, during the heat treatment of the substrate 20, the control unit 114 controls the lifting mechanism 1116 to drive the sealing member 1117 to move to a mating position that mates with the substrate delivery port 1111, thereby closing the substrate delivery port 1111. As shown in Figure 4, during the loading or unloading of the substrate 20, the control unit 114 controls the lifting mechanism 1116 to drive the sealing member 1117 from the mating position to the open position, thereby opening the substrate delivery port 1111.

[0045] As shown in Figure 5, this application discloses a substrate heat treatment method, which is applicable to the substrate heat treatment apparatus 110 in any of the above embodiments. The substrate heat treatment method includes:

[0046] In step S10, the cavity 111 opens the substrate delivery port 1111 and loads the substrate 20 to be processed. Before and during the opening of the substrate delivery port 1111, the ventilation mechanism 113 adjusts the internal air pressure of the cavity 111 to be no less than the external air pressure of the cavity 111.

[0047] In step S20, the cavity 111 closes the substrate delivery port 1111, the hot plate 112 heats the substrate 20 to be processed, and during the heat treatment of the substrate 20, the ventilation mechanism 113 delivers clean gas into the cavity 111 and discharges the gas in the cavity 111.

[0048] In step S30, the cavity 111 opens the substrate delivery port 1111 to unload the heat-treated substrate 20. Before and during the opening of the substrate delivery port 1111, the ventilation mechanism 113 adjusts the internal air pressure of the cavity 111 to be no less than the external air pressure of the cavity 111.

[0049] Preferably, step S20 further includes: the ventilation mechanism 113 delivers clean gas into the cavity 111 and discharges the gas in the cavity 111, and adjusts the internal air pressure of the cavity 111 to be lower than the external air pressure of the cavity 111.

[0050] Referring to Figure 6, this application also discloses a coating and developing apparatus 10. The coating and developing apparatus 10 includes a front-end module 11, a process station 12, and an interface station 13 connected in sequence. The front-end module 11 is used to load the substrate to be processed or unload the substrate that has completed the coating and developing process. The interface station 13 is used to transfer the substrate that has completed the coating process to an exposure machine or to the substrate that has completed the exposure process to the process station 12. Furthermore, the process station 12 includes a substrate heat treatment unit 100, a coating unit 200, a developing unit 300, and a transfer unit 400.

[0051] Specifically, the substrate heat treatment unit 100 is equipped with the substrate heat treatment apparatus 110 as described in any of the above embodiments. The coating unit 200 is used to coat the substrate. The developing unit 300 is used to develop the substrate. The transfer unit 400 includes a plurality of robotic arms 410 for transferring the substrate between the equipment front-end module 11, the process station 12 and the interface station 13, and for transferring the substrate within the process station 12.

[0052] In this embodiment, by providing a substrate heat treatment device 110 in the substrate heat treatment unit 100 of the coating and developing equipment 10, the influence of impurity gases outside the cavity 111 of the substrate heat treatment device 110 on the substrate heat treatment is reduced during the pre-baking of the substrate after coating, the post-exposure baking of the substrate after exposure, and the post-baking of the substrate after developing in the substrate heat treatment unit 100. This reduces substrate surface defects, improves the uniformity of the film thickness on the substrate surface, and increases product yield.

[0053] It should be noted that the above embodiments can be freely combined as needed. The above are merely preferred embodiments of this application. For those skilled in the art, several improvements and modifications can be made without departing from the principles of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A substrate heat treatment apparatus characterized by comprising: The application relates to a substrate heat treatment device, comprising: a cavity provided with a closable substrate conveying port; a hot plate arranged in the cavity and used for carrying and heating a substrate; a gas exchange mechanism used for air exchange of the cavity; and a control unit communicatively connected with the cavity, the hot plate and the gas exchange mechanism, wherein the control unit is configured to: during heat treatment of the substrate, control the cavity to close the substrate conveying port, and control the gas exchange mechanism to supply clean gas into the cavity and discharge gas in the cavity; and during loading or unloading of the substrate, control the cavity to open the substrate conveying port, and control the gas exchange mechanism to adjust the internal pressure of the cavity to be not less than the external pressure of the cavity before and during opening of the substrate conveying port. The gas exchange mechanism comprises: a gas supply unit used for supplying clean gas into the cavity; and a gas discharge unit used for discharging gas in the cavity, wherein the control unit is configured to control the gas supply unit and the gas discharge unit to make the gas supply amount of the cavity not less than the gas discharge amount before and during opening of the substrate conveying port, so that the internal pressure of the cavity is not less than the external pressure.

3. The substrate heat treatment device according to claim 2, wherein the gas discharge unit comprises a gas discharge port arranged above the hot plate and connected with a gas suction pump; and the gas supply unit comprises a gas inlet port connected with a gas supply source and used for supplying clean gas into the cavity.

4. The substrate heat treatment device according to claim 3, wherein the gas discharge port comprises a first gas discharge port located above the middle part of the hot plate and a second gas discharge port located above the edge of the hot plate.

5. The substrate heat treatment device according to claim 4, wherein the control unit is configured to control the gas discharge unit to make the gas discharge amount of the second gas discharge port greater than the gas discharge amount of the first gas discharge port before and during opening of the substrate conveying port.

6. The substrate heat treatment device according to claim 4, wherein a flow guide plate is arranged above the hot plate and has a cup-shaped structure with an opening downward, wherein a central part of the flow guide plate is provided with a gas discharge hole connected with the first gas discharge port and used for discharging gas above the middle part of the hot plate; and an edge of the flow guide plate is provided with a gas discharge gap between the edge and the inner side wall of the cavity, the gas discharge gap being communicated with the second gas discharge port and used for discharging gas above the edge of the hot plate. The cavity comprises: a bottom groove used for accommodating the hot plate; and a cover plate arranged above the bottom groove; and a lifting mechanism communicatively connected with the control unit and used for driving the bottom groove and / or the cover plate to lift, wherein the control unit is configured to: during loading or unloading of the substrate, control the lifting mechanism to drive the bottom groove and the cover plate to separate, so that the cover plate and the bottom groove have a preset opening to form the substrate conveying port.

2. The substrate thermal processing apparatus of claim 1, wherein ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ 7. The substrate thermal processing apparatus of claim 1, wherein ​ ​ ​ ​ ​ During the heat treatment of the substrate, the lifting mechanism is controlled to drive the bottom groove and the cover plate to be closed, so that the bottom edge of the cover plate is in sealing contact with the top edge of the bottom groove.

8. The substrate thermal processing apparatus of claim 1, wherein The cavity comprises: A sealing member movably arranged outside the substrate conveying port and matched with the substrate conveying port for sealing the substrate conveying port; A lifting mechanism in communication connection with the control part for driving the sealing member to move; wherein the control part is configured to: During the heat treatment of the substrate, the lifting mechanism is controlled to drive the sealing member to move to a matched position matched with the substrate conveying port to close the substrate conveying port; During the loading or unloading of the substrate, the lifting mechanism is controlled to drive the sealing member to move from the matched position to an open position to open the substrate conveying port.

9. A substrate heat treatment method suitable for use in the substrate heat treatment apparatus according to any one of claims 1 to 8, characterized by, Comprise: Step S10, the cavity opens the substrate conveying port, loads the substrate to be processed, and before and during the opening of the substrate conveying port, the air exchange mechanism adjusts the internal air pressure of the cavity to be not less than the external air pressure of the cavity; Step S20, the cavity closes the substrate conveying port, the hot plate performs heat treatment on the substrate to be processed, and during the heat treatment of the substrate, the air exchange mechanism supplies clean gas into the cavity and discharges the gas in the cavity; Step S30, the cavity opens the substrate conveying port, unloads the substrate after heat treatment, and before and during the opening of the substrate conveying port, the air exchange mechanism adjusts the internal air pressure of the cavity to be not less than the external air pressure of the cavity.

10. A coating developing apparatus characterized by comprising: Comprise a device front end module, a process station and an interface station connected in sequence, characterized in that the process station comprises: A substrate heat treatment unit provided with a plurality of substrate heat treatment devices as claimed in any one of claims 1 to 8; A coating unit for coating treatment of the substrate; A developing unit for developing treatment of the substrate; A transmission unit for transmitting the substrate between the device front end module, the process station and the interface station, and transmitting the substrate within the process station.

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