Semiconductor processing apparatus

Abstract

Provided in the present disclosure is a semiconductor processing apparatus, comprising a chamber, a filter assembly, a first coil, a second coil, a first radio frequency power supply and a second radio frequency power supply; the filter assembly is arranged in the chamber, and divides the inside of the chamber to form a first sub-chamber and a second sub-chamber arranged below the first sub-chamber; the filter assembly is used for filtering plasma flowing therethrough, such that the substance passing through the filter assembly is mainly free radicals; a base used for carrying a wafer is arranged in the second sub-chamber; the first coil and the second coil are both arranged around the chamber and are both located above the filter assembly, and the first coil is located above the second coil and is electrically connected to the first radio frequency power supply; the second coil is electrically connected to the second radio frequency power supply.

Description

Semiconductor processing apparatus TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to a semiconductor processing apparatus. BACKGROUND

[0002] High-selectivity radical etching is a dry etching technology using radicals for etching process. The working principle of a radical etching apparatus is generally as follows: first, plasma is generated in a reaction chamber by inductively coupled plasma (ICP) or capacitively coupled plasma (CCP), then a grid device is used to filter ions, electrons, neutral particles or other substances, and only radicals pass through, and finally a high-selectivity etching process is completed using radicals. Radical etching has the advantages of high selectivity and no physical damage to the etching material, and plays an increasingly important role in advanced process etching.

[0003] For a high-selectivity radical etching apparatus, etching uniformity and etching rate are important process index parameters. The uniformity and energy of the radical source generated in the reaction chamber are the key factors that determine the etching uniformity and etching rate of the high-selectivity radical etching apparatus, respectively. Based on the existing radical etching apparatus, for the radical energy, the input power of the system is generally changed to adjust the radical energy, and then the etching rate is controlled; for the uniformity of the radical source, the current radical etching apparatus cannot effectively adjust it through hardware adjustment or other means, and can only fine-tune the etching uniformity by changing the gas flow.

[0004] However, the uniformity and energy of the radicals generated in the reaction chamber will change with the change of the applied power or process pressure, resulting in a large difference in the uniformity and energy of the radicals under different input power or process pressure, and thus leading to poor stability and consistency of the etching process. SUMMARY

[0005] The present application aims to at least solve one of the technical problems existing in the prior art, and proposes a semiconductor processing apparatus which can control the uniformity of radicals on the basis of adjusting the energy of radicals, so as to improve the stability and consistency of the etching process.

[0006] To achieve the purpose of the present application, a semiconductor processing equipment is provided, comprising a cavity, a filter assembly, a first coil, a second coil, a first radio frequency power supply and a second radio frequency power supply, wherein the filter assembly is arranged in the cavity and separates the cavity into a first sub-cavity and a second sub-cavity arranged below the first sub-cavity; the filter assembly is used for filtering plasma flowing therethrough so that the substances passing through the filter assembly are mainly free radicals; a susceptor for carrying a wafer is arranged in the second sub-cavity.

[0007] The first coil and the second coil are both arranged around the cavity and are both located above the filter assembly, and the first coil is located above the second coil and is electrically connected with the first radio frequency power supply; the second coil is electrically connected with the second radio frequency power supply.

[0008] In some embodiments, the frequency of the second radio frequency power supply is lower than the frequency of the first radio frequency power supply.

[0009] In some embodiments, the ratio of the radio frequency power loaded by the second radio frequency power supply to the second coil to the radio frequency power loaded by the first radio frequency power supply to the first coil is greater than or equal to 1 and less than or equal to 1.5.

[0010] In some embodiments, the cavity comprises a first sub-cavity and a second sub-cavity which constitute the first sub-cavity and the second sub-cavity respectively;

[0011] The semiconductor processing equipment further comprises a shielding cavity and an isolation plate, wherein the shielding cavity is arranged around the first sub-cavity, and an annular mounting space is formed between the inner circumferential wall of the shielding cavity and the outer circumferential wall of the first sub-cavity; the first coil and the second coil are both arranged in the mounting space;

[0012] The isolation plate is annular and is arranged around the first sub-cavity in the mounting space and is located between the first coil and the second coil; the shielding cavity and the isolation plate are both made of electrically and magnetically conductive material, are fixedly connected and are electrically conductive; the shielding cavity is grounded.

[0013] In some embodiments, an anti-creeping arc piece is further included, which is annular and is arranged at the bottom of the first coil for maintaining a predetermined distance between the first coil and the isolation plate.

[0014] In some embodiments, the outer circumferential surface and the inner circumferential surface of the anti-creeping arc piece are both formed with a plurality of grooves, and the grooves on the outer circumferential surface of the anti-creeping arc piece are arranged in the vertical direction; the grooves on the inner circumferential surface of the anti-creeping arc piece are arranged in the vertical direction.

[0015] In some embodiments, a coil fixing frame is further included, which is annular and arranged around the cavity; a plurality of support structures are arranged on the inner circumferential surface of the coil fixing frame, and the plurality of support structures are arranged at intervals along the circumferential direction of the coil fixing frame; each of the support structures comprises a plurality of first fixing grooves arranged at intervals along the axial direction of the coil fixing frame, and the plurality of first fixing grooves are used for fixing the plurality of coil segments of the first coil one by one.

[0016] In some embodiments, each of the support structures further comprises at least one first anti-creeper groove arranged between each of two adjacent coil segments.

[0017] In some embodiments, an anti-creeper piece is further included, which is annular and arranged at the bottom of the first coil.

[0018] A support boss is further arranged at the bottom of the coil fixing frame and protrudes towards the center of the coil fixing frame relative to the inner circumferential wall of the coil fixing frame; the anti-creeper piece is arranged at the bottom of the support boss and fixedly connected with the support boss.

[0019] In some embodiments, a height adjusting assembly is further included, which is connected with the first coil and used for driving the first coil to move up and down.

[0020] In some embodiments, a first air inlet assembly is further included, which comprises a flow uniformizing component arranged at the top of the first sub-cavity; the top surface of the flow uniformizing component is arranged at intervals with the top wall of the first sub-cavity to form a first channel; and the outer circumferential surface of the flow uniformizing component is arranged at intervals with the inner circumferential wall of the first sub-cavity to form a second channel.

[0021] A central air inlet is arranged on the top wall of the first sub-cavity, which is in communication with the first channel, and used for being in communication with a gas source.

[0022] In some embodiments, a second air inlet assembly is further included, which is arranged at the side of the first sub-cavity and located at a position between the first coil and the second coil, and used for introducing process gas into the first sub-cavity.

[0023] In some embodiments, the second air inlet assembly comprises a first air inlet ring, a first annular channel is arranged in the first air inlet ring, and a plurality of first air outlets and a first air inlet are formed on the outer wall of the first air inlet ring; the plurality of first air outlets are arranged at intervals along the circumferential direction of the first air inlet ring.

[0024] A side wall of the first sub-cavity and located at a position between the first coil and the second coil is provided with a first edge air inlet, the first edge air inlet is in communication with the first air inlet, and the first edge air inlet is used for being in communication with the gas source.

[0025] In some embodiments, among the plurality of first air outlets, a part of the first air outlets are located at the top of the first air inlet ring and are distributed along the circumference of the first air inlet ring; and another part of the first air outlets are located at the bottom of the first air inlet ring and are distributed along the circumference of the first air inlet ring.

[0026] In some embodiments, the filter assembly comprises a first filter plate and a second filter plate oppositely and spacedly arranged below the first filter plate, the first filter plate is provided with a plurality of first filter holes, the second filter plate is provided with a plurality of second filter holes, and the plurality of first filter holes and the plurality of second filter holes are at least partially staggered.

[0027] In some embodiments, a third air inlet assembly is further included, and the third air inlet assembly is used for introducing process gas into the space between the first filter plate and the second filter plate.

[0028] In some embodiments, the third air inlet assembly comprises a second air inlet ring, the second air inlet ring is provided with a second annular channel, and the second annular channel is formed with a plurality of second air outlets and a second air inlet on the outer wall of the second air inlet ring; and the plurality of second air outlets are distributed along the circumference of the second air inlet ring.

[0029] A side wall of the first sub-cavity and located at a position between the first coil and the second coil is provided with a first edge air inlet, the first edge air inlet is in communication with the first air inlet, and the first edge air inlet is used for being in communication with the gas source.

[0030] The present application has the following beneficial effects:

[0031] The semiconductor processing equipment provided by the application can make the plasma generated by the first coil and the second coil filtered by the filter assembly, so that the particles for performing the etching process are mainly free radicals (for example, the passing rate is more than 99.9999%). On this basis, by electrically connecting the first coil with the first radio frequency power supply and electrically connecting the second coil with the second radio frequency power supply, the control of the free radical energy can be realized in the case of separately turning on the first radio frequency power supply or the second radio frequency power supply when the process is performed. In the case of turning on the first radio frequency power supply and the second radio frequency power supply, the free radical uniformity before the free radical energy is adjusted can be basically consistent with the free radical uniformity after the free radical energy is adjusted by adjusting the free radical uniformity on the premise of the change of the free radical energy, so that the stability and consistency of the etching process can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0032] Fig. 1 is a two-dimensional sectional view of the semiconductor processing equipment provided by the embodiment of the application;

[0033] Fig. 2 is a three-dimensional sectional view of the semiconductor processing equipment provided by the embodiment of the application;

[0034] Fig. 3 is a three-dimensional sectional view of the filter assembly adopted by the embodiment of the application;

[0035] Fig. 4 is a structure diagram of the isolation plate adopted by the embodiment of the application;

[0036] Fig. 5 is a three-dimensional sectional view of the anti-creeper, the moving bottom plate and the isolation plate adopted by the embodiment of the application;

[0037] Fig. 6 is a structure diagram of the coil fixing frame adopted by the embodiment of the application;

[0038] Fig. 7 is a three-dimensional sectional view of the second gas inlet assembly adopted by the embodiment of the application;

[0039] Fig. 8 is a structure diagram of the third gas inlet assembly adopted by the embodiment of the application;

[0040] Fig. 9 is a structure diagram of the split type coil fixing frame adopted by the embodiment of the application. DETAILED DESCRIPTION

[0041] In order for those skilled in the art to better understand the technical solutions of the application, the semiconductor processing equipment provided by the application is described in detail below with reference to the drawings.

[0042] Referring to FIG. 1 and FIG. 2, a semiconductor processing apparatus 100 is provided, which is applied to a radical etching apparatus for example. The semiconductor processing apparatus 100 comprises a cavity, a filter assembly 2, a first coil 3, a second coil 4, a first RF power source 5 and a second RF power source 6. The cavity comprises a first sub-cavity 1 and a second sub-cavity 12 arranged below the first sub-cavity 1 for example. In some embodiments, the semiconductor processing apparatus further comprises a shielding cavity 11, which is arranged around the first sub-cavity 1 for shielding the electromagnetic field generated by the first coil 3 and / or the second coil 4. Specifically, the top of the first sub-cavity 1 and the shielding cavity 11 are both closed, the bottom of the first sub-cavity 1 and the shielding cavity 11 are both open, and the shielding cavity 11 is arranged around the first sub-cavity 1, and an annular mounting space 13 is formed between the outer peripheral wall of the first sub-cavity 1 and the inner peripheral wall of the shielding cavity 11. The lower end of the first sub-cavity 1 and the shielding cavity 11 is fixedly and sealingly connected to the top wall of the second sub-cavity 12, and the second sub-cavity 12 has a top opening for communicating the interior of the first sub-cavity 1 with the interior of the second sub-cavity 12. In one example, the size of the interior space of the second sub-cavity 12 in the horizontal direction is greater than the size of the interior space of the first sub-cavity 1 and the shielding cavity 11 in the horizontal direction. The first sub-cavity 1, the shielding cavity 11 and the second sub-cavity 12 are cylindrical for example, in which case the inner diameter of the second sub-cavity 12 is greater than the inner diameter of the first sub-cavity 1 and the shielding cavity 11, and the inner diameter of the shielding cavity 11 is greater than the outer diameter of the first sub-cavity 1.

[0043] The first sub-cavity 1 is made of a dielectric material such as ceramic for example, for coupling RF energy to the interior of the first sub-cavity 1. The shielding cavity 11 and the second sub-cavity 12 are made of an electrically and magnetically conductive material for shielding the electromagnetic field generated by the first coil 3 and / or the second coil 4. The electrically and magnetically conductive material is preferably made of a metal material with good magnetic conductivity, such as iron, aluminum or an alloy of iron and aluminum.

[0044] In the present embodiment, the first sub-cavity 1 is cylindrical, but the present embodiments are not limited thereto, and in other embodiments, the first sub-cavity 1 can also be dome-shaped. The shielding cavity 11 can be adapted to the shape of the first sub-cavity 1, or can have a different shape.

[0045] The filter assembly 2 is arranged in the cavity and separates the cavity into a first sub-cavity 14 and a second sub-cavity 15 arranged below the first sub-cavity 14. Specifically, the filter assembly 2 is arranged between the first sub-cavity 1 and the second sub-cavity 12, for example, at the position of the top opening, in which case the first sub-cavity 14 is formed by the first sub-cavity 1 and the second sub-cavity 15 is formed by the second sub-cavity 12. A susceptor 16 for carrying a wafer is arranged in the second sub-cavity 15. The susceptor 16 is, for example, an electrostatic chuck, and in some embodiments, a radio frequency electrode in the susceptor 16 is electrically connected to a third radio frequency power source 9, specifically, the third radio frequency power source 9 loads a radio frequency bias voltage to the wafer through a third matching device 10.

[0046] The filter assembly 2 is used to filter the plasma flowing therethrough so that the substances passing through the filter assembly 2 are mainly free radicals. The plasma contains ions, electrons, neutral particles, free radicals or other substances, and the filter assembly 2 is used to make the substances passing through the filter assembly 2 mainly free radicals and enter the second sub-cavity 15, so as to realize the etching process of the wafer on the susceptor 16 in the second sub-cavity 15 by mainly free radicals. The free radical etching has the advantages of high selectivity and no physical damage to the etching material. For example, the pass rate of free radicals is more than 99.9999%, and less than 0.0001% of charged particles may pass through the filter assembly 2.

[0047] In some embodiments, as shown in FIG. 3, the filtering assembly 2 for implementing the above functions may, for example, include a first filter plate 21 and a second filter plate 22 oppositely and spacedly arranged below the first filter plate 21, the first filter plate 21 is provided with a plurality of first filter holes 211, and the second filter plate 22 is provided with a plurality of second filter holes 221, the plurality of first filter holes 211 and the plurality of second filter holes 221 are at least partially staggered, so that the filtering effect on the plasma can be improved. In some examples, the size of the first filter hole 211 and the second filter hole 221 in the horizontal direction is less than or equal to 1 mm. The first filter hole 211 and the second filter hole 221 are, for example, both circular holes with a diameter less than or equal to 1 mm. Of course, in actual application, the first filter hole 211 and the second filter hole 221 may, for example, also be polygonal holes, oval holes, etc., in which case the size of the first filter hole 211 and the second filter hole 221 in the horizontal direction should be the largest size thereof in the horizontal direction. The plurality of first filter holes 211 and the plurality of second filter holes 221 may, for example, be partially staggered or completely staggered. In addition, by adopting double-layer filter plates, the thickness of a single filter plate can be reduced while ensuring the filtering effect. Specifically, the parameters for ensuring the plasma filtering effect include the size and depth of the filter holes in the horizontal direction, and under the condition that the size of the filter holes in the horizontal direction is the same, if a single-layer filter plate is adopted, the depth of the filter hole needs to be more than 10 mm in order to ensure the filtering effect. If a double-layer filter plate is adopted, the depth of a single filter plate can be in the range of 1 mm to 3 mm to ensure the filtering effect, so that the thickness of a single filter plate can be reduced, thereby reducing the processing difficulty, improving the processing precision, and reducing the cost.

[0048] In some embodiments, as shown in FIG. 3, the filtering assembly 2 may, for example, further include a support frame 23, the support frame 23 is annular, and the support frame 23 is arranged in the top opening of the second sub-cavity 12 and fixedly connected, for example, welded or threaded, with the inner circumferential wall of the top opening. The diameter of the inner circumferential wall of the support frame 23 is, for example, greater than or equal to the diameter of the inner circumferential wall of the first sub-cavity 1 (i.e., the first sub-cavity 14). Furthermore, two annular stepped portions (231, 232) are formed on the inner circumferential wall of the support frame 23 for respectively overlapping with the edge portions of the first filter plate 21 and the second filter plate 22, so as to support the two filter plates, and the two annular stepped portions (231, 232) are also used to keep a distance between the two filter plates in the vertical direction, which is, for example, greater than or equal to 0.5 mm and less than or equal to 2 mm, so as to ensure the filtering effect.

[0049] As shown in FIG. 1 and FIG. 2, the first coil 3 and the second coil 4 are both arranged around the cavity and above the filter assembly 2, for example, arranged in the mounting space 13 between the outer peripheral wall of the first sub-cavity 1 and the inner peripheral wall of the shielding cavity 11, and the first coil 3 is above the second coil 4 and electrically connected with the first radio frequency power source 5, specifically, electrically connected with the first radio frequency power source 5 through the first matching device 7, and the first radio frequency power source 5 is used to load radio frequency power to the first coil 3 to ionize the process gas in the first sub-cavity 14 to form plasma; the second coil 4 is electrically connected with the second radio frequency power source 6, specifically, electrically connected with the second radio frequency power source 6 through the second matching device 8, and the second radio frequency power source 6 is used to load radio frequency power to the second coil 4 to ionize the process gas in the first sub-cavity 14 to form plasma. Since the first coil 3 and the second coil 4 correspond to different regions of the first sub-cavity 14 in the vertical direction, the electromagnetic fields generated by the two coils are distributed in different regions of the first sub-cavity 14 in the vertical direction, and the second coil 4 is closer to the wafer surface on the susceptor 16 relative to the first coil 3, so that the distance of the free radicals in the plasma moving from the region of the first sub-cavity 14 corresponding to the second coil 4 to the wafer surface is also closer, and since the closer the distance is, the less the energy loss of the free radicals is, therefore, under the same conditions of other process parameters, the energy of the free radicals moving from the region of the first sub-cavity 14 corresponding to the second coil 4 to the wafer surface is higher than that of the free radicals moving from the region of the first sub-cavity 14 corresponding to the first coil 3 to the wafer surface. Moreover, the electromagnetic fields generated by the first coil 3 and the second coil 4 can jointly play a role in adjusting the uniformity of the free radicals in the first sub-cavity 14.

[0050] When the first radio frequency power source 5 is turned on alone, radio frequency power can be loaded into the first sub-cavity 14 through the first coil 3 alone; when the second radio frequency power source 6 is turned on alone, radio frequency power can be loaded into the first sub-cavity 14 through the second coil 4 alone; when both the first radio frequency power source 5 and the second radio frequency power source 6 are turned on, radio frequency power can be loaded into the first sub-cavity 14 through the first coil 3 and the second coil 4 together. It should be noted that when both the first radio frequency power source 5 and the second radio frequency power source 6 are turned on, the first radio frequency power source 5 can be turned on first, and after the plasma is ignited and stabilized, the second radio frequency power source 6 is turned on; or, the second radio frequency power source 6 can be turned on first, and after the plasma is ignited and stabilized, the first radio frequency power source 5 is turned on.

[0051] The semiconductor processing equipment 100 provided by the embodiments of the present application is configured by the first coil 3 and the second coil 4, which are arranged around the cavity and above the filter assembly 2. The plasma generated by the first coil 3 and the second coil 4 can be filtered by the filter assembly 2, so that the particles passing through the filter assembly 2 are mainly free radicals (for example, the passing rate is more than 99.9999%). On this basis, by electrically connecting the first coil 3 with the first radio frequency power source 5 and electrically connecting the second coil 4 with the second radio frequency power source 6, the control of the free radical energy can be realized by separately turning on the first radio frequency power source 5 or the second radio frequency power source 6. In the case of turning on both the first radio frequency power source 5 and the second radio frequency power source 6, the free radical uniformity can be adjusted to be basically the same as that before the free radical energy is adjusted, that is, the free radical uniformity remains basically unchanged before and after the free radical energy changes, so that the stability and consistency of the etching process can be improved.

[0052] Compared with the second coil 4, the first coil 3 is farther away from the surface of the wafer placed on the susceptor 16. If the first radio frequency power source 5 is selected to be turned on alone, the free radicals in the plasma generated near the first coil 3 will inevitably collide with the surrounding gas in the process of moving downward to the surface of the wafer, resulting in a gradual decrease in the energy of the free radicals, and even some of the free radicals are annihilated, thereby causing the free radical density near the wafer to decrease, and further causing the free radical energy to decrease, so that the etching rate cannot meet the process requirements. In this case, the second radio frequency power source 6 can be selected to be turned on alone. Since the second coil 4 is closer to the surface of the wafer on the susceptor 16, the free radicals in the plasma generated near the second coil 4 will have less loss in the process of moving to the surface of the wafer, so that compared with turning on the first radio frequency power source 5 alone, turning on the second radio frequency power source 6 alone can generate more free radical energy under the condition of loading the same radio frequency power, thereby improving the etching rate.

[0053] Table 1

[0054] The above Table 1 is the etching rate of the wafer (for example, a silicon wafer) measured under the condition that the first radio frequency power source 5 and the second radio frequency power source 6 are turned on alone and other process parameters are the same. In Table 1, the first radio frequency power is the radio frequency power output by the first radio frequency power source 5, and the second radio frequency power is the radio frequency power output by the second radio frequency power source 6. As can be seen from Table 1, under the condition that other process parameters are the same, turning on the second radio frequency power source 6 alone can obtain a higher etching rate.

[0055] In some embodiments, in order to further increase the radical energy, the frequency of the second radio frequency power source 6 is lower than the frequency of the first radio frequency power source 5. For example, the frequency of the first radio frequency power source 5 is 13.56 MHz, and the frequency of the second radio frequency power source 6 is 12.88 MHz. Since the lower the frequency of the radio frequency power source, the higher the corresponding generated particle energy. In this case, by separately turning on the second radio frequency power source 6 with a lower frequency, the radical energy can be further increased, so that the etching rate can be further increased.

[0056] Of course, in actual applications, other ways can also be used to increase the radical energy, for example, the frequency of the first radio frequency power source 5 can also be reduced, the first radio frequency power output by the first radio frequency power source 5 can be increased, and the second radio frequency power output by the second radio frequency power source 6 can be increased. In addition, according to specific needs, for example, in the case of needing to reduce the radical energy, the frequency of the first radio frequency power source 5 and the frequency of the second radio frequency power source 6 can also be the same, or the frequency of the second radio frequency power source 6 is higher than the frequency of the first radio frequency power source 5.

[0057] In the case of turning on both the first radio frequency power source 5 and the second radio frequency power source 6, the control of radical uniformity can be realized. For example, in the case of separately turning on the first radio frequency power source 5, if the radio frequency power output by the first radio frequency power source 5 is W1, the etching uniformity is U1; if the radio frequency power output by the first radio frequency power source 5 is W2, W2>W1, the etching uniformity is U2. In this case, although the etching rate is increased by increasing the radio frequency power output by the first radio frequency power source 5, since the etching uniformity changes from U1 to U2, this will result in poor stability and consistency of the etching process. In this regard, by turning on both the first radio frequency power source 5 and the second radio frequency power source 6, the radical uniformity control can be realized, so that on the premise of changing the radical energy, the radical uniformity is adjusted to be basically the same as the radical uniformity before the radical energy is adjusted, that is, the radical uniformity remains basically unchanged before and after the radical energy changes, so that the stability and consistency of the etching process can be improved.

[0058] In some embodiments, in the case of turning on both the first radio frequency power source 5 and the second radio frequency power source 6, the ratio of the radio frequency power loaded by the second radio frequency power source 6 to the second coil 4 to the radio frequency power loaded by the first radio frequency power source 5 to the first coil 3 is greater than or equal to 1 and less than or equal to 1.5. In this numerical range, better etching process uniformity can be obtained.

[0059] Table 2

[0060] Table 2 shows the electric field intensity uniformity, magnetic field intensity uniformity and etching process uniformity obtained when both the first RF power source 5 and the second RF power source 6 are turned on under the same other process parameters. In Table 2, the first RF power is the RF power output by the first RF power source 5, and the second RF power is the RF power output by the second RF power source 6. The power signals output by the first RF power source 5 and the second RF power source 6 are, for example, sine waves, and the first RF power and the second RF power are the amplitudes of the power signals. The electric field intensity uniformity Ue=(Emax-Emin) / (Emax+Emin), where Emax represents the circumferential maximum electric field intensity and Emin represents the circumferential minimum electric field intensity. The magnetic field intensity uniformity Uh=(Hmax-Hmin) / (Hmax+Hmin), where Hmax represents the circumferential maximum magnetic field intensity and Hmin represents the circumferential minimum magnetic field intensity. As shown in Table 2, when the first RF power is 1000 W, the etching process uniformity corresponding to the two cases of the second RF power being 200 W and 500 W is poor, and the etching process uniformity corresponding to the two cases of the second RF power being 1000 W and 1500 W is good.

[0061] It should be noted that whether the first RF power source 5 is turned on alone, the second RF power source 6 is turned on alone, or both the first RF power source 5 and the second RF power source 6 are turned on is set in the process recipe in advance before the formal process, and will not be changed during the process. In addition, the first RF power and the second RF power are also set in the process recipe in advance before the formal process, and will not be changed during the process.

[0062] In some embodiments, as shown in FIG. 1, FIG. 2 and FIG. 4, in the embodiments in which the semiconductor processing apparatus 100 comprises the first sub-cavity 1, the second sub-cavity 12 and the shielding cavity 11, the semiconductor processing apparatus 100 further comprises an isolation plate 17, which is annular and arranged in the mounting space 13 around the first sub-cavity 1 between the first coil 3 and the second coil 4, and is made of electrically and magnetically conductive material and fixedly connected with the shielding cavity 11 and electrically connected with the shielding cavity 11. The shielding cavity 11 is grounded. Specifically, the isolation plate 17 is used to reduce the interference between the electromagnetic fields generated by the first coil 3 and the second coil 4 during the discharge process, so that the first coil 3 and the second coil 4 can be used at the same time. The isolation plate 17 is fixedly connected with the shielding cavity 11 and electrically connected with the shielding cavity 11, for example, by a plurality of fixing screws 18, so that the isolation plate 17 is grounded through the shielding cavity 11. The plurality of fixing screws 18 are, for example, distributed along the circumference of the isolation plate 17, a plurality of threaded holes are formed on the outer circumferential wall of the isolation plate 17, and a plurality of through holes penetrating in the radial direction of the shielding cavity 11 are correspondingly provided in the shielding cavity 11, each threaded hole corresponds to each through hole, and each fixing screw 18 passes through each through hole from the outside of the shielding cavity 11 and is threadedly connected with the corresponding threaded hole, so that the isolation plate 17 is fixedly connected with the shielding cavity 11 and electrically connected with the shielding cavity 11 through the plurality of fixing screws 18. The isolation plate 17 is preferably made of a metal material with good magnetic conductivity, such as iron, aluminum or an alloy thereof. The material of the isolation plate 17 and the shielding cavity 11 can be the same or different.

[0063] Further, in some embodiments, as shown in FIG. 4, the inner circumferential surface 171 of the isolation plate 17 is provided with a protective layer (not shown in the figure) to avoid the generation of particles during the installation process. Specifically, during the installation of the first sub-cavity 1, the first sub-cavity 1 will pass through the isolation plate 17 and may come into contact with the inner circumferential surface 171 of the isolation plate 17 during this process. In this case, in order to reduce the pollution of metal particles generated by the contact of the isolation plate 17, the protective layer is provided on the inner circumferential surface 171 of the isolation plate 17, and the material of the protective layer includes, for example, nickel or other materials that do not generate particles.

[0064] In some embodiments, in order to increase the ways of adjusting the radical energy, so as to improve the adjustment flexibility, as shown in FIG. 1 and FIG. 2, the semiconductor processing equipment 100 provided by the embodiments of the present application further comprises a height adjusting assembly 19 connected with the first coil 3, for driving the first coil 3 to make lifting movement. By means of the height adjusting assembly 19 driving the first coil 3 to make lifting movement, the distance between the first coil 3 and the pedestal 16 can be adjusted, that is, the distance of the radical movement in the plasma generated near the first coil 3 to the wafer surface can be adjusted, so that the radical energy can be adjusted. Specifically, under the condition that other process parameters are the same, by means of the height adjusting assembly 19 driving the first coil 3 to rise, the radical energy can be reduced; on the contrary, by means of the height adjusting assembly 19 driving the first coil 3 to descend, the radical energy can be increased.

[0065] In some embodiments, as shown in FIG. 1, FIG. 2 and FIG. 5, the semiconductor processing equipment 100 further comprises an anti-creeping arc piece 31, for example, the anti-creeping arc piece 31 is annular and is arranged at the bottom of the first coil 3, for keeping a preset distance between the first coil 3 and the isolation plate 17. By means of the anti-creeping arc piece 31, when a larger power is applied to the first coil 3, the arcing between the first coil 3 and the grounded isolation plate 17 can be prevented. Further, in some embodiments, the outer circumferential surface and the inner circumferential surface of the anti-creeping arc piece 31 are both formed with a plurality of grooves 311, the grooves 311 are arranged along the circumferential direction of the anti-creeping arc piece 31, and the grooves 311 on the outer circumferential surface of the anti-creeping arc piece 31 are arranged in the vertical direction; the grooves 311 on the inner circumferential surface of the anti-creeping arc piece 31 are arranged in the vertical direction. By means of the plurality of grooves 311, the arcing distance between the first coil 3 and the grounded isolation plate 17 can be further increased, so that the arcing between the first coil 3 and the grounded isolation plate 17 can be effectively prevented.

[0066] In some embodiments, as shown in FIG. 1, FIG. 2 and FIG. 6, the semiconductor processing apparatus 100 further comprises a coil fixing frame 32 for fixing the first coil 3. In the embodiments provided with the anti-creeping arc member 31, the anti-creeping arc member 31 is arranged at the bottom of the coil fixing frame 32 and fixedly connected with the coil fixing frame 32 for supporting the coil fixing frame 32. In a specific embodiment, the coil fixing frame 32 is annular and arranged around the cavity (i.e. the first sub-cavity 1). A plurality of support structures are arranged on the inner circumferential surface of the coil fixing frame 32 and spaced apart along the circumferential direction of the coil fixing frame 32. Each support structure comprises a plurality of first fixing grooves 321 spaced apart along the axial direction of the coil fixing frame 32. The number of the first fixing grooves 321 of each support structure is the same as the number of the coil segments of the first coil 3 and corresponds to the number of the coil segments of the first coil 3 one by one. The plurality of first fixing grooves 321 of each support structure are used to fix the plurality of coil segments of the first coil 3 one by one. The first coil 3 is, for example, a cylindrical spiral coil. In this case, the plurality of coil segments of the first coil 3 are a plurality of spiral coil segments of the cylindrical spiral coil. Of course, in actual applications, the first coil 3 can also comprise a plurality of non-closed annular coil segments connected in sequence by connecting segments. In this case, the plurality of coil segments of the first coil 3 are the plurality of annular coil segments.

[0067] In some embodiments, each support structure further comprises at least one first anti-creeping arc groove 322 arranged between each two adjacent coil segments for preventing the generation of arc between each two adjacent coil segments.

[0068] In one example, the coil fixing frame 32 further comprises a hollow portion 323 arranged between each two adjacent support structures for heat dissipation.

[0069] In the embodiments provided with the anti-creeping arc member 31, a support boss 324 is arranged at the bottom of the coil fixing frame 32 and protrudes towards the center of the coil fixing frame 32 relative to the inner circumferential wall of the coil fixing frame 32. The anti-creeping arc member 31 is arranged at the bottom of the support boss 324 and fixedly connected with the support boss 324, for example, by a plurality of screws. The support boss 324 is, for example, annular.

[0070] In some embodiments, as shown in FIG. 1, FIG. 2 and FIG. 9, the semiconductor processing equipment 100 further comprises a split coil fixing frame, which comprises a plurality of fixing columns 37 for fixing the second coil 4 together. Specifically, the plurality of fixing columns 37 are arranged on the bottom of the installation space 13 and below the isolation plate 17, and are distributed along the circumference of the first sub-cavity 11. The outer circumferential wall of each fixing column 37 is provided with a plurality of second fixing grooves 371 on the side facing the axis of the first sub-cavity 11, and the second fixing grooves 371 are arranged along the axial direction of the fixing column 37. The number of second fixing grooves 371 of each fixing column 37 is the same as the number of coil segments of the second coil 4, and each second fixing groove 371 is arranged one-to-one corresponding to a coil segment of the second coil 4. Each second fixing groove 371 is used for fixing a corresponding coil segment of the second coil 4. Further, in some embodiments, a second anti-creepage arc groove 372 is arranged between each two adjacent second fixing grooves 371 to prevent arcing between each two adjacent coil segments of the second coil 4.

[0071] In the embodiments provided with the anti-creepage arc member 31, the height adjustment assembly 19 can be connected with the first coil 3 through the anti-creepage arc member 31. As shown in FIG. 1, FIG. 2 and FIG. 5, the height adjustment assembly 19 comprises a lifting motor 191, a connecting rod 192 and a moving base plate 193. The moving base plate 193 is annular and arranged on the bottom of the anti-creepage arc member 31 and fixedly connected with the anti-creepage arc member 31 to support the anti-creepage arc member 31. The connecting rod 192 is vertically arranged in the installation space 13 between the outer circumferential wall of the first sub-cavity 1 and the inner circumferential wall of the shielding cavity 11. The lower end of the connecting rod 192 is located on one side of the outer circumference of the moving base plate 193 and fixedly connected with the moving base plate 193, for example, welded or integrated. The upper end of the connecting rod 192 penetrates the top wall of the shielding cavity 11 and extends above the shielding cavity 11 and is fixedly connected with the driving shaft of the lifting motor 191. The lifting motor 191 is fixed to the top wall of the shielding cavity 11 through a mounting flange 194. The lifting motor 191 drives the moving base plate 193 to rise and fall through the connecting rod 192, thereby driving the anti-creepage arc member 31, the coil fixing frame 32 and the first coil 3 to rise and fall synchronously.

[0072] In some embodiments, as shown in FIG. 1 and FIG. 2, the semiconductor processing equipment 100 further comprises a first gas inlet assembly 33 arranged on the top of the first sub-cavity 14 to introduce process gas into the first sub-cavity 14.

[0073] Further, in some embodiments, as shown in FIG. 1 and FIG. 2, the semiconductor processing equipment 100 further comprises a second gas inlet assembly 34 arranged on the side of the first sub-cavity 14 and located between the first coil 3 and the second coil 4 to introduce process gas into the first sub-cavity 14.

[0074] The first gas inlet assembly 33 can be provided alone or together with the second gas inlet assembly 34. In the embodiment where the first gas inlet assembly 33 and the second gas inlet assembly 34 are provided together, if the first RF power source 5 is selected to be turned on alone, process gas is needed to be introduced into the first sub-cavity 14 through the first gas inlet assembly 33 so that plasma can be generated near the first coil 3 under the action of the first coil 3. In this case, process gas can be introduced into the first sub-cavity 14 through the second gas inlet assembly 34 or not. If the second RF power source 6 is selected to be turned on alone, process gas can be introduced into the first sub-cavity 14 through the first gas inlet assembly 33 so that plasma can be generated near the second coil 4 under the action of the second coil 4 when the process gas flows to the vicinity of the second coil 4. Alternatively, process gas can be introduced into the first sub-cavity 14 through the second gas inlet assembly 34 so that plasma can be generated near the second coil 4 under the action of the second coil 4. Alternatively, process gas can be introduced into the first sub-cavity 14 through both the first gas inlet assembly 33 and the second gas inlet assembly 34. If both the first RF power source 5 and the second RF power source 6 are selected to be turned on, process gas is needed to be introduced into the first sub-cavity 14 through the first gas inlet assembly 33 so that plasma can be generated near the first coil 3 under the action of the first coil 3. In this case, process gas can be introduced into the first sub-cavity 14 through the second gas inlet assembly 34 or not.

[0075] In some embodiments, the flow rate of process gas introduced into the first sub-cavity 14 by the first gas inlet assembly 33 and / or the second gas inlet assembly 34 is adjustable, for example, by a mass flow controller provided on the corresponding gas inlet pipeline. In this case, the flow rate of process gas introduced into the first sub-cavity 14 by the first gas inlet assembly 33 and / or the second gas inlet assembly 34 can be adjusted to adjust the radical energy or the radical uniformity. Specifically, if the flow rate of process gas introduced into the first sub-cavity 14 by the first gas inlet assembly 33 and / or the second gas inlet assembly 34 is increased, the number of collisions between the plasma and the introduced process gas can be increased. The more the number of collisions, the more the energy loss of the plasma in the collision process, so that the radical energy of the plasma is reduced, and the etching rate can be reduced, which can be applied to the scene of performing a low-damage process.

[0076] Table 3

[0077] In the above Table 3, under the condition that the first radio frequency power supply 5 is turned on alone and the first radio frequency power outputted by the first radio frequency power supply 5 remains unchanged at 1000W, the process gas can be introduced into the first sub-cavity 14 through the first gas inlet assembly 33 alone or through the first gas inlet assembly 33 and the second gas inlet assembly 34. As shown in Table 3, under the condition that the flow rate of the process gas introduced into the first sub-cavity 14 by the first gas inlet assembly 33 (all 1000sccm) is the same, the greater the flow rate of the process gas introduced into the first sub-cavity 14 by the second gas inlet assembly 34, the smaller the etching rate. Therefore, the etching rate can be adjusted by adjusting the flow rate of the process gas introduced into the first sub-cavity 14 by the second gas inlet assembly 34.

[0078] When it is necessary to adjust the radical uniformity, the radical uniformity can also be adjusted by adjusting the flow rate of the process gas introduced into the first sub-cavity 14 by the first gas inlet assembly 33 or by simultaneously adjusting the flow rates of the process gas introduced into the first sub-cavity 14 by the first gas inlet assembly 33 and the second gas inlet assembly 34. However, since the way of adjusting the gas flow rate has limited effect on the radical uniformity, this way can be used in combination with the way of turning on both the first radio frequency power supply 5 and the second radio frequency power supply 6.

[0079] Further, in the embodiment in which the filter assembly 2 comprises the first filter plate 21 and the second filter plate 22, the semiconductor processing apparatus 100 provided by the embodiment of the present application further comprises a third gas inlet assembly 35 for introducing process gas into the space between the first filter plate 21 and the second filter plate 22. The function of the third gas inlet assembly 35 is similar to that of the second gas inlet assembly 34. In this case, if it is selected to turn on the first radio frequency power supply 5 alone, the process gas is introduced into the first sub-cavity 14 through the first gas inlet assembly 33, and on this basis, the process gas can be introduced into the first sub-cavity 14 through the second gas inlet assembly 34 and / or the third gas inlet assembly 35. If it is selected to turn on the second radio frequency power supply 6 alone, the process gas can be introduced into the first sub-cavity 14 through the first gas inlet assembly 33 and / or the second gas inlet assembly 34, and on this basis, the process gas can be introduced into the first sub-cavity 14 through the third gas inlet assembly 35 or not. If it is selected to turn on both the first radio frequency power supply 5 and the second radio frequency power supply 6, the process gas is introduced into the first sub-cavity 14 through the first gas inlet assembly 33, and on this basis, the process gas can be introduced into the first sub-cavity 14 through the second gas inlet assembly 34 and / or the third gas inlet assembly 35.

[0080] In some embodiments, the flow rate of the process gas introduced into the first sub-cavity 14 by the third gas inlet assembly 35 is adjustable, in which case, the radical energy or radical uniformity can be adjusted by adjusting the flow rate of the process gas introduced into the first sub-cavity 14 by the first gas inlet assembly 33, the second gas inlet assembly 34 and / or the third gas inlet assembly 35. In addition, due to the closer distance between the third gas inlet assembly 35 and the wafer surface, the radicals passing through the first filter plate 21 have a relatively shorter time to collide with the process gas provided by the third gas inlet assembly 35, and thus, under the same conditions, the third gas inlet assembly 35 has a weaker ability to regulate the radical energy.

[0081] As shown in FIGS. 1 and 2, the first gas inlet assembly 33 for achieving the above functions includes, for example, a flow uniformizing component 331 arranged at the top of the first sub-cavity 14, which is fixedly connected to the top wall of the shielding cavity 11 by a plurality of screws 334, each of which is vertically arranged through the first sub-cavity 1 and is arranged along the circumferential direction of the flow uniformizing component 331, and the top surface of the flow uniformizing component 331 is arranged in a spaced manner with the top wall of the first sub-cavity 14 to form a first channel 332, and the outer circumferential surface of the flow uniformizing component 331 is arranged in a spaced manner with the inner circumferential wall of the first sub-cavity 14 to form a second channel 333; and a central gas inlet 335 is arranged on the top wall of the first sub-cavity 14, which is in communication with the first channel 332 and is used to communicate with the gas source 36. The central gas inlet 335 is composed of, for example, a nozzle arranged on the top wall of the first sub-cavity 14. During the process, the process gas provided by the gas source 36 can flow into the first sub-cavity 14 through the central gas inlet 335, the first channel 332 and the second channel 333 in sequence, and since the second channel 333 is formed between the outer circumferential surface of the flow uniformizing component 331 and the inner circumferential wall of the first sub-cavity 14, this can enable the process gas to be transmitted downward around the first sub-cavity 14 and to diffuse towards the center of the first sub-cavity 14 during the downward flow, which can enable the process gas to be first distributed in the edge region near the first coil 3, thereby facilitating the ionization to generate more plasma and improving the uniformity of the plasma distribution in the first sub-cavity 14.

[0082] In some embodiments, in order to enable the plasma to diffuse to the central region of the first sub-cavity 14 as soon as possible, the width of the second channel 333 is greater than the width of the first channel 332. Further, in some embodiments, the width of the first channel 332 is greater than or equal to 5 mm and less than or equal to 10 mm, and the width of the second channel 333 is greater than or equal to 10 mm and less than or equal to 20 mm. The width of the first channel 332 should not be too small or too large, otherwise the uniformity of the plasma distributed in the edge region near the first coil 3 will be affected. The width of the second channel 333 should not be too small, otherwise the diffusion of the plasma to the central region of the first sub-cavity 14 will be affected, and the width of the second channel 333 should not be too large, otherwise the uniformity of the plasma distributed in the edge region near the first coil 3 will be affected. It should be noted that the width of the first channel 332 is the vertical distance between the top surface of the flow uniforming component 331 and the top wall of the first sub-cavity 14. The width of the second channel 333 is the radial distance between the outer circumferential surface of the flow uniforming component 331 and the inner circumferential wall of the first sub-cavity 14.

[0083] In some embodiments, the length of the second channel 333 is greater than or equal to 7 mm and less than or equal to 20 mm. The length of the second channel 333 should not be too small, otherwise the flow guiding effect on the process gas will be affected, and the length of the second channel 333 should not be too large, otherwise the diffusion of the plasma to the central region of the first sub-cavity 14 will be affected. The length of the second channel 333 is the length of the outer circumferential surface of the flow uniforming component 331 in the vertical direction.

[0084] In addition, in some embodiments, in order to avoid the flow uniforming component 331 affecting the electromagnetic field generated by the first coil 3, the lower end of the outer circumferential surface of the flow uniforming component 331 in the vertical direction is higher than or flush with the top of the uppermost coil segment of the first coil 3.

[0085] In a specific embodiment, the flow uniforming component 331, for example, includes a horizontal plate and a ring-shaped vertical plate, which is arranged around the edge of the horizontal plate and below the horizontal plate, wherein the horizontal plate is parallel to and spaced apart from the top wall of the first sub-cavity 14 to form the first channel 332, and the ring-shaped vertical plate is parallel to and spaced apart from the inner circumferential wall of the first sub-cavity 14 to form the second channel 333. The lower end of the ring-shaped vertical plate is higher than or flush with the top of the uppermost coil segment of the first coil 3.

[0086] As shown in FIG. 1, FIG. 2 and FIG. 7, the second gas inlet assembly 34 for realizing the above functions comprises, for example, a first gas inlet ring 341, in which a first annular passage is arranged, and a plurality of first gas outlets 342 and a first gas inlet are formed on the outer wall of the first gas inlet ring 341. The plurality of first gas outlets 342 are spaced apart along the circumference of the first gas inlet ring 341. The side wall of the cavity is provided with a first edge gas inlet at a position between the first coil 3 and the second coil 4, which is in communication with the first gas inlet, and is used to communicate with the gas source 36. Specifically, the first gas inlet ring 341 is arranged around the inner circumferential wall of the first sub-cavity 1. The above-mentioned first edge gas inlet is, for example, the gas outlet end of a first gas inlet pipeline 343, which penetrates the side wall of the first sub-cavity 1 and is in communication with the above-mentioned first gas inlet. The gas inlet end of the first gas inlet pipeline 343 penetrates the shielding cavity 11 and extends to the outside of the shielding cavity 11, and is used to communicate with the gas source 36. The process gas provided by the gas source 36 can flow into the first annular passage through the first gas inlet pipeline 343 and the first gas inlet in sequence, and then flow into the first sub-cavity 1 through each first gas outlet 342. The process gas flowing into the first sub-cavity 1 through each first gas outlet 342 can be transmitted downward around the first sub-cavity 14 and diffuse to the center of the first sub-cavity 14 during the downward flow, so that the process gas can be distributed in the edge area near the second coil 4 first, thereby helping to ionize to generate more plasma and improving the uniformity of the distribution of the plasma in the first sub-cavity 14.

[0087] Further, in some embodiments, as shown in FIG. 7, among the plurality of first gas outlets 342, a part of the first gas outlets 342 are located at the top of the first gas inlet ring 341 and are spaced apart along the circumference of the first gas inlet ring 341, and another part of the first gas outlets 342 are located at the bottom of the first gas inlet ring 341 and are spaced apart along the circumference of the first gas inlet ring 341. In this way, the uniformity of the distribution of the plasma in the first sub-cavity 14 can be further improved. Of course, the embodiments of the present application are not limited thereto, and in actual applications, at least a part of the first gas outlets 342 can also be located at the inner circumferential wall of the first gas inlet ring 341.

[0088] As shown in FIGS. 1-3 and 8, the third gas inlet assembly 35 for achieving the above functions includes, for example, a second gas inlet ring 351 having a second annular passage formed therein, and a plurality of second gas outlets 352 and second gas inlets formed on the outer wall of the second gas inlet ring 351. The plurality of second gas outlets 352 are spaced apart along the circumference of the second gas inlet ring 351. Similar to the first gas outlets 342, a portion of the plurality of second gas outlets 352 are located at the top of the second gas inlet ring 351 and spaced apart along the circumference of the second gas inlet ring 351, and another portion of the plurality of second gas outlets 352 are located at the bottom of the second gas inlet ring 351 and spaced apart along the circumference of the second gas inlet ring 351. In this way, the uniformity of the distribution of the plasma in the first sub-cavity 14 can be further improved. Of course, the embodiments of the present application are not limited thereto, and in actual applications, at least a portion of the second gas outlets 352 can be located at the inner periphery of the second gas inlet ring 351.

[0089] The second edge gas inlets are provided at the position of the gap between the first filter plate 21 and the second filter plate 22 (i.e., the inner periphery of the top opening of the second sub-cavity 12), are in communication with the second gas inlets, and are used to communicate with the gas source 36. Specifically, as shown in FIG. 3, the second gas inlet ring 351 is provided, for example, around the edge of the gap between the first filter plate 21 and the second filter plate 22, and in the embodiments in which the filter assembly 2 includes the support frame 23, is provided on the inner peripheral wall of the support frame 23 and between the two annular stepped portions (231, 232). The second gas inlet ring 351 can be provided in the accommodating groove 233 located between the upper side and the lower side of the accommodating groove 233, and has a gap between the upper side and the lower side of the accommodating groove 233, so that the process gas flowing out of the second gas outlets 352 can flow out of the gap. The above-mentioned second edge gas inlets are, for example, the gas outlet end of the second gas inlet pipeline 353, which penetrates through the side wall of the support frame 23 and is in communication with the second gas inlets. The other end of the second gas inlet pipeline 353 extends out of the outer periphery of the second sub-cavity 12 to be able to communicate with the external gas source 36. The second gas inlet pipeline 353 penetrates through the top wall of the second sub-cavity 12, for example.

[0090] In summary, the semiconductor processing equipment 100 provided by the embodiments of the present application can make the plasma generated by the first coil 3 and the second coil 4 filtered by the filtering assembly 2, so that the substance passing through the filtering assembly is mainly free radicals, and the particles performing the etching process are mostly free radicals (for example, the passing rate is more than 99.9999%). On this basis, by electrically connecting the first coil 3 with the first radio frequency power source 5 and electrically connecting the second coil 4 with the second radio frequency power source 6, the control of the free radical energy can be realized in the case of separately turning on the first radio frequency power source 5 or the second radio frequency power source 6 when the process is performed. In the case of turning on the first radio frequency power source 5 and the second radio frequency power source 6, the free radical uniformity can be adjusted to be basically the same as the free radical uniformity before the free radical energy is adjusted under the premise of the change of the free radical energy, so that the stability and consistency of the etching process can be improved.

[0091] It can be understood that the above embodiments are only exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and essence of the present application, and these modifications and improvements are also considered to be within the protection scope of the present application.

Claims

1. A semiconductor processing apparatus characterized by comprising: The semiconductor processing device comprises a cavity, a filtering assembly, a first coil, a second coil, a first radio frequency power source and a second radio frequency power source, wherein the filtering assembly is arranged in the cavity and separates the cavity into a first sub-cavity and a second sub-cavity arranged below the first sub-cavity; the filtering assembly is used for filtering plasma flowing therethrough so that the substance passing through the filtering assembly is mainly free radicals; a susceptor for carrying a wafer is arranged in the second sub-cavity. The first coil and the second coil are both arranged around the cavity and above the filtering assembly, and the first coil is above the second coil and electrically connected with the first radio frequency power source; the second coil is electrically connected with the second radio frequency power source.

2. The semiconductor processing apparatus according to claim 1, wherein The frequency of the second radio frequency power source is lower than that of the first radio frequency power source.

3. The semiconductor processing apparatus of claim 1, wherein The ratio of the radio frequency power loaded by the second radio frequency power source to the second coil to the radio frequency power loaded by the first radio frequency power source to the first coil is greater than or equal to 1 and less than or equal to 1.

5.

4. The semiconductor processing apparatus of claim 1, wherein The cavity comprises a first sub-cavity and a second sub-cavity which constitute the first sub-cavity and the second sub-cavity respectively. The semiconductor processing device further comprises a shielding cavity and an isolation plate, wherein the shielding cavity is arranged around the first sub-cavity, and an annular mounting space is formed between the inner circumferential wall of the shielding cavity and the outer circumferential wall of the first sub-cavity; the first coil and the second coil are both arranged in the mounting space; The isolation plate is annular and arranged around the first sub-cavity in the mounting space and between the first coil and the second coil; the isolation plate and the shielding cavity are both made of electrically and magnetically conductive material, are fixedly connected and electrically conductive; and the shielding cavity is grounded.

5. The semiconductor processing apparatus of claim 4, wherein Further comprising an anti-creeper, which is annular and arranged at the bottom of the first coil, and is used for keeping a predetermined distance between the first coil and the isolation plate.

6. The semiconductor processing apparatus of claim 5, wherein The outer circumferential surface and the inner circumferential surface of the anti-creeper are both formed with a plurality of grooves, and the grooves on the outer circumferential surface of the anti-creeper are arranged in the vertical direction; the grooves on the inner circumferential surface of the anti-creeper are arranged in the vertical direction.

7. The semiconductor processing apparatus of claim 1, wherein Further comprising a coil fixing frame, which is annular and arranged around the cavity; the inner circumferential surface of the coil fixing frame is provided with a plurality of support structures, and the support structures are arranged in the circumferential direction of the coil fixing frame; each support structure comprises a plurality of first fixing grooves arranged in the axial direction of the coil fixing frame, and the first fixing grooves are used for fixing a plurality of coil segments of the first coil one by one.

8. The semiconductor processing apparatus of claim 7, wherein Each support structure further comprises at least one first anti-creeper groove, and the first anti-creeper groove is arranged between each two adjacent coil segments.

9. The semiconductor processing apparatus of claim 7, wherein Further comprising an anti-creeper, which is annular and arranged at the bottom of the first coil. The bottom of the coil fixing frame is further provided with a supporting boss protruding towards the center of the coil fixing frame relative to the inner circumferential wall of the coil fixing frame, and the anti-creeper is arranged at the bottom of the supporting boss and fixedly connected with the supporting boss.

10. The semiconductor processing apparatus according to any one of claims 1 through 9, wherein The height adjusting assembly is further connected with the first coil and used for driving the first coil to move up and down.

11. The semiconductor processing apparatus according to any one of claims 1 to 9, wherein The first air inlet assembly further comprises a flow uniformizing component arranged at the top of the first sub-cavity, and the top surface of the flow uniformizing component is arranged in a spaced manner with the top wall of the first sub-cavity to form a first channel, and the outer circumferential surface of the flow uniformizing component is arranged in a spaced manner with the inner circumferential wall of the first sub-cavity to form a second channel. The top wall of the first sub-cavity is provided with a central air inlet, the central air inlet is communicated with the first channel, and the central air inlet is used for being communicated with a gas source.

12. The semiconductor processing apparatus of claim 11, wherein, The second air inlet assembly is arranged at the side of the first sub-cavity and located between the first coil and the second coil, and is used for introducing process gas into the first sub-cavity.

13. The semiconductor processing apparatus of claim 12, wherein, The second air inlet assembly comprises a first air inlet ring, the first air inlet ring is provided with a first annular channel, and the first annular channel is formed with a plurality of first air outlets and a first air inlet on the outer wall of the first air inlet ring; a plurality of the first air outlets are distributed in a spaced manner along the circumference of the first air inlet ring. The side wall of the first sub-cavity and located between the first coil and the second coil is provided with a first edge air inlet, the first edge air inlet is communicated with the first air inlet, and the first edge air inlet is used for being communicated with a gas source.

14. The semiconductor processing apparatus of claim 13, wherein Among a plurality of the first air outlets, a part of the first air outlets are located at the top of the first air inlet ring and distributed in a spaced manner along the circumference of the first air inlet ring; another part of the first air outlets are located at the bottom of the first air inlet ring and distributed in a spaced manner along the circumference of the first air inlet ring.

15. The semiconductor processing apparatus according to any one of claims 1 through 9, wherein The filter assembly comprises a first filter plate and a second filter plate arranged in a spaced and opposite manner below the first filter plate, the first filter plate is provided with a plurality of first filter holes, the second filter plate is provided with a plurality of second filter holes, and a plurality of the first filter holes and a plurality of the second filter holes are at least partially staggered.

16. The semiconductor processing apparatus of claim 15, wherein The third air inlet assembly is used for introducing process gas into the space between the first filter plate and the second filter plate.

17. The semiconductor processing apparatus of claim 16, wherein, The third air inlet assembly comprises a second air inlet ring, the second air inlet ring is provided with a second annular channel, and the second annular channel is formed with a plurality of second air outlets and a second air inlet on the outer wall of the second air inlet ring; a plurality of the second air outlets are distributed in a spaced manner along the circumference of the second air inlet ring. The cavity is provided with a second edge air inlet at a position corresponding to the space between the first filter plate and the second filter plate, the second edge air inlet is communicated with the second air inlet, and the second edge air inlet is used for being communicated with a gas source.

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