Method for manufacturing coated member, and film treatment device

Abstract

Provided are a method for manufacturing a coated member having a treated film, and a film treatment device.　The method for manufacturing a coated member includes a step for preparing a base material, a step for forming a thermal-sprayed film on at least a portion of the surface of the base material, and a step for forming a modified film on the thermal-sprayed film by exposing the surface of the thermal-sprayed film to a reduced-pressure plasma generated from a modifying gas.

Description

Manufacturing method of coated member and membrane treatment device

[0001] The present disclosure relates to a method for manufacturing a coated member and a membrane treatment device.

[0002] Patent Document 1 discloses a plasma spraying device for forming a thermally sprayed film on a substrate.

[0003] JP 2023-38080 A

[0004] In one aspect, the present disclosure provides a method for producing a coated member having a treated membrane and a membrane treatment apparatus.

[0005] In order to solve the above problem, according to one aspect, there is provided a method for manufacturing a coated member, comprising the steps of: preparing a substrate; forming a thermal sprayed film on at least a portion of the surface of the substrate; and exposing the surface of the thermal sprayed film to low-pressure plasma generated from a modified gas to form a modified film on the thermal sprayed film.

[0006] According to one aspect, a method for producing a coated member having a treated film and a film treatment device can be provided.

[0007] An example of a diagram showing an example of the overall configuration of a membrane treatment apparatus. An example of a flowchart showing a method for treating a member. An example of a cross-sectional view of a coated member showing an example of membrane treatment. An example of a cross-sectional view of a coated member showing an example of membrane treatment. Another example of a cross-sectional view of a coated member showing an example of membrane treatment. Another example of a cross-sectional view of a coated member showing an example of membrane treatment. Another example of a cross-sectional view of a coated member showing an example of membrane treatment. Another example of a cross-sectional view of a coated member showing an example of membrane treatment.

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] An example of a film processing apparatus 1 will be described with reference to Fig. 1. Fig. 1 is an example diagram showing an example of the overall configuration of the film processing apparatus 1. As shown in Fig. 1, the film processing apparatus 1 is an apparatus that sprays a powder of a thermal spray material (hereinafter referred to as "thermal spray powder R1") onto the surface of a substrate W (hereinafter also referred to as a member or a part) while melting it with plasma, thereby forming a thermal sprayed film F1 on the surface of the substrate W. The film processing apparatus 1 is also an apparatus that performs a heat treatment on the thermal sprayed film F1 using reduced-pressure plasma to modify the surface of the thermal sprayed film F1.

[0010] The film treatment device 1 includes a spraying section 10 that sprays thermal spray powder R1, a gas supply section 40 that supplies gas to the spraying section 10, a cooling section 60 that cools the spraying section 10, and a control section 70 that controls the operation of each component.

[0011] The spraying unit 10 includes a cylindrical nozzle 11 and a feeder 20 that supplies the thermal spray powder R1 into the nozzle 11. The tip side of the spraying unit 10 is installed inside a housing (housing) 30 of the film processing apparatus 1. The housing 30 and a stage (not shown) on which the substrate W is placed are disposed inside a chamber (not shown). The chamber is depressurized to a predetermined reduced pressure atmosphere.

[0012] The particle size of the thermal spray powder R1 sprayed by the spraying part 10 is, for example, 0.1 μm to 10 μm. Examples of the thermal spray powder R1 include fine powders of metals such as copper (Cu), lithium (Li), iron (Fe), aluminum (Al), nickel (Ni), molybdenum (Mo), and silicon (Si). The thermal spray powder R1 may also be fine powders of resins such as polyester. The thermal spray powder R1 may also be fine powders of aluminum oxide, yttrium oxide, yttrium fluoride, zirconium oxide, mullite (Al), and the like. ６ O １３ Si ２ ), spinel (MgAl ２ O ４ ) or fine powder of a composite material of these ceramics.

[0013] The nozzle 11 has a nozzle body 12 that extends linearly, and a jetting cylinder 15 that is installed at the tip of the nozzle body 12. The length along the axial direction of the jetting cylinder 15 is shorter than the length along the axial direction of the nozzle body 12. The nozzle 11 has the nozzle body 12 and the jetting cylinder 15 as separate members, which makes it possible to replace only the jetting cylinder 15 during maintenance of the device, etc.

[0014] The nozzle 11 has a passage 11a therein through which the thermal spray powder flows. The passage 11a is formed in a perfect circular shape in a cross section perpendicular to the axial direction of the nozzle 11, and extends from the base end of the nozzle body 12 to the tip of the ejection cylinder 15. In other words, the nozzle body 12 has a main body hole 12a that constitutes the passage 11a at its axis, while the ejection cylinder 15 has an ejection hole 15a that constitutes the passage 11a at its axis.

[0015] The nozzle body 12 is formed in a cylindrical shape from a conductive or non-conductive metal material. The nozzle body 12 has a body hole 12a along its central axis. The body hole 12a extends linearly with a constant inner diameter along the axial direction of the nozzle body 12. A connection communication port 12b is formed at the tip of the nozzle body 12 (the end on the ejection cylinder 15 side) and communicates with the body hole 12a and can also communicate with the ejection hole 15a.

[0016] The ejection cylinder 15 is formed from a conductive metal material and has a cylindrical shape that is slightly thinner than the nozzle body 12. The ejection hole 15a passes linearly through the axis of the ejection cylinder 15. Therefore, the ejection cylinder 15 has an ejection port 15b at its tip that communicates with the ejection hole 15a, and a base end opening 15c at its base end that communicates with the ejection hole 15a. The ejection cylinder 15 also has a flange 16 on the outer peripheral surface on the base end side. The flange 16 releasably engages with an inner protrusion 31 provided inside the housing 30.

[0017] The housing 30 is formed of a non-conductive resin material. The housing 30 fixes the ejection cylinder 15 so that the central axis of the nozzle body 12 and the central axis of the ejection cylinder 15 are coaxial. By fixing the nozzle 11 to the housing 30, the axis of the passage 11a extends linearly along the vertical direction (up-down direction) of the membrane treatment device 1. Note that the fixation of the ejection cylinder 15 is not limited to the engagement between the flange 16 and the inner protrusion 31, and it may be fixed to the housing 30 or the nozzle body 12 by any suitable engagement means (screw engagement, welding, adhesive, etc.).

[0018] When the nozzle 11 is fixed, the housing 30 is in close contact with the outer peripheral surface of the nozzle body 12 from the axial middle position to the tip side, and is also in close contact with the outer peripheral surface of the base end side of the ejection cylinder 15. The housing 30 has a generation space 30a for generating a plasma jet P around the tip side (lower end side) of the ejection cylinder 15. Furthermore, the base end side (upper end side) of the nozzle body 12 protrudes from the top surface of the housing 30.

[0019] The feeder 20 is connected to the base end of the nozzle 11 (nozzle body 12) and supplies the thermal spray powder R1 to the nozzle 11. The feeder 20 includes a container 21 that stores the thermal spray powder R1 and an actuator 22 provided in the container 21. The container 21 is formed, for example, in a bowl shape, and feeds the thermal spray powder R1 from the container 21 into the passage 11a when rotational vibration is applied from the actuator 22. The actuator 22 may be a motor, a transmission mechanism that transmits the rotational drive of the motor, or the like (both not shown).

[0020] The gas supply unit 40 of the film treatment apparatus 1 supplies a plasma generating gas to the nozzle 11. The plasma generating gas is a gas for generating plasma, and also functions as a carrier gas for carrying the thermal spray powder R1 in the passage 11a of the nozzle 11. Examples of the plasma generating gas include argon (Ar) gas, nitrogen (N ２ ) gas, helium (He) gas, or a mixture thereof can be used. In the following, an example in which Ar gas is used as the plasma generating gas will be described.

[0021] The gas supply unit 40 has a supply pipe 41 for supplying Ar gas (plasma generating gas). The gas supply unit 40 also includes, in order from upstream to downstream in the gas flow direction of the supply pipe 41, a gas supply source 42A, a valve 43A, and a mass flow controller (MFC) 44. The gas supply unit 40 supplies Ar gas from the gas supply source 42A based on the opening of the valve 43, and controls the flow rate using the mass flow controller 44, thereby supplying a predetermined flow rate of Ar gas to the passage 11a of the nozzle 11.

[0022] Furthermore, the gas supply unit 40 supplies Ar gas, which is a gas for a swirling flow, to the generation space 30a of the casing 30. The gas supply unit 40 has a branch pipe 45 branching from the supply pipe 41, and a mass flow controller (MFC) 46 is provided on the branch pipe 45. That is, when the gas supply unit 40 supplies Ar gas from the gas supply source 42A based on the opening of the valve 43, the gas supply unit 40 controls the flow rate using the mass flow controller 46, thereby causing the Ar gas to flow through the branch pipe 45 at a predetermined flow rate.

[0023] The branch pipe 45 is connected to a gas flow path 32 provided inside the housing 30. The gas flow path 32 extends vertically from the top to the bottom of the housing 30 and bends horizontally midway to communicate with the generation space 30a. The Ar gas supplied by the gas supply unit 40 flows horizontally into the generation space 30a, forming a swirling flow around the ejection cylinder 15 within the generation space 30a.

[0024] Although Figure 1 shows only one supply flow path for Ar gas introduced laterally into the generation space 30a, the housing portion 30 may have multiple openings communicating with the gas flow path 32 along the circumferential direction of the generation space 30a.

[0025] Furthermore, the gas supply unit 40 supplies a modifying gas that generates plasma that modifies film quality to the generation space 30a of the housing 30. The gas supply unit 40 branches off from the supply pipe 41 and includes, in order from upstream to downstream in the gas flow direction, a gas supply source 42B and a valve 43B. That is, when the gas supply unit 40 supplies the modifying gas from the gas supply source 42B by opening the valve 43B, the gas supply unit 40 closes the mass flow controller 44 and controls the flow rate with the mass flow controller 46, thereby causing the modifying gas to flow at a predetermined flow rate through the branch pipe 45.

[0026] In addition, although the modified gas supplied from the gas supply source 42B is described as flowing through the branch pipe 45, the present invention is not limited to this. The modified gas supplied from the gas supply source 42B may be configured to bypass the feeder 20 (container 21) and flow through the passage 11a of the nozzle 11.

[0027] The membrane treatment device 1 includes a plasma generation unit that generates plasma from the gas supplied from the gas supply unit 40. The plasma generation unit includes a DC power supply 51, a cathode electrode 52 (first electrode), and an anode electrode 53 (second electrode). The membrane treatment device 1 has the DC power supply 51 outside the housing unit 30, and generates plasma in the generation space 30a by supplying DC power to the cathode electrode 52 and the anode electrode 53 installed in the housing unit 30. The membrane treatment device 1 according to this embodiment uses a nozzle 11 (ejection cylinder 15) made of metal as the cathode electrode 52. The housing unit 30 also has a metal block 35 that functions as the anode electrode 53 on the inner surface of the generation space 30a.

[0028] Specifically, the housing 30 has a recess 33 and a protrusion 34 as portions that form the inner circumferential surface of the generation space 30a. The recess 33 is provided with an opening of the gas flow path 32 described above.

[0029] The protruding portion 34 is formed by a metal block 35 and protrudes radially inward beyond the recessed portion 33. The metal block 35 is made of a conductive metal material. The metal block 35 is formed in a ring shape, and its outer periphery is joined to the housing 30. The portion surrounded by the metal block 35 forms a jet passage 35a through which the generated plasma jet P passes. The central axis of the metal block 35 (jet passage 35a), which serves as the second electrode, is coaxial with the central axis of the nozzle body 12 (nozzle 11). In addition, the metal block 35 is formed in a concave shape with an open outer periphery in a cross-sectional view, allowing a refrigerant such as water to flow through a concave space 35b.

[0030] The membrane treatment apparatus 1 having the above configuration supplies DC power from the DC power supply 51 to the nozzle 11 (cathode electrode 52) and the metal block 35 (anode electrode 53). This generates a discharge between the cathode electrode 52 and the anode electrode 53, promoting ionization of the Ar gas (or the reforming gas), and generating plasma in the generation space 30a.

[0031] The cooling section 60 includes a chiller unit 61, a refrigerant outlet pipe 62 through which the refrigerant flows out from the chiller unit 61, and a refrigerant inlet pipe 63 through which the refrigerant flows back to the chiller unit 61. The cooling section 60 also includes a valve 64 and a flow meter (FM) 65 on the refrigerant outlet pipe 62, and a valve 66 on the refrigerant inlet pipe 63.

[0032] The refrigerant outlet pipe 62 and the refrigerant inlet pipe 63 are connected to a refrigerant flow path 67 formed in the housing 30. The refrigerant flow path 67 is connected to a nozzle cooling space 67a that runs around the outside of the nozzle body 12 and to the recessed space 35b of the metal block 35. The refrigerant supplied from the chiller unit 61 to the refrigerant outlet pipe 62 flows into the refrigerant flow path 67 of the housing 30, passes through the nozzle cooling space 67a and the recessed space 35b in the housing 30, and flows out into the refrigerant inlet pipe 63, returning to the chiller unit 61. This allows the cooling unit 60 to adjust the temperature of the housing 30 when plasma is generated.

[0033] The membrane treatment apparatus 1 may also include a magnetic field generating unit (not shown) that generates a magnetic field in the generation space 30 a. The magnetic field generating unit may be configured, for example, by placing a ring-shaped permanent magnet or electromagnet at the same height as the metal block 35.

[0034] The control unit 70 of the membrane treatment device 1 is a control computer having one or more processors, memory, input / output interfaces, and electronic circuits. The one or more processors are one or a combination of a CPU, ASIC, FPGA, a circuit made up of multiple discrete semiconductors, etc. The memory includes volatile memory and nonvolatile memory (storage media such as computer storage media, flexible disks, compact disks, hard disks, magneto-optical disks, and memory cards), and programs are stored in the nonvolatile memory.

[0035] The control unit 70 controls each component of the film processing apparatus 1 by causing the processor to execute the program stored in the memory, thereby controlling the plasma spraying and forming a sprayed film F1 on the surface of the substrate W positioned opposite the jet passage 35a at a position away from the housing 30. The film processing apparatus 1 may perform spraying while moving the substrate W or while moving the nozzle 11. When performing spraying while moving the substrate W, for example, spraying is performed while moving a stage (not shown) on which the substrate W is placed in the horizontal direction. When performing spraying while moving the nozzle 11, for example, spraying is performed while fixing the housing 30 to an arm that can move in the horizontal direction, and moving the housing 30 in the horizontal direction by the arm. The stage on which the substrate W is placed, the housing 30, and the arm that moves the housing 30 are provided in a chamber (not shown), and the chamber is depressurized to a predetermined reduced pressure atmosphere.

[0036] The film treatment device 1 according to this embodiment has an electrode structure 80 including the nozzle 11 (ejection cylinder 15) as the cathode electrode 52 and the metal block 35 as the anode electrode 53, which can suppress adhesion of the molten spray powder R1 to the inner wall of the ejection cylinder 15 during plasma spraying. Specifically, the control unit 70 of the film treatment device 1 supplies Ar gas from the gas supply source 42A and applies DC power from the DC power supply 51 to the ejection cylinder 15 (cathode electrode 52) and the metal block 35 (anode electrode 53). As a result, plasma of the Ar gas is generated in the gap between the ejection cylinder 15 and the metal block 35. At this time, a swirling flow of the Ar gas causes the generated plasma to be sprayed vertically toward the substrate W. The control unit 70 controls the cooling unit 60 to supply a coolant to the coolant flow path 67 of the housing 30. This cools the nozzle body 12 and the metal block 35, which have been heated by plasma spraying. On the other hand, since the ejection cylinder 15 is located away from the refrigerant flow path 67, it is maintained at a high temperature.

[0037] Furthermore, the control unit 70 of the membrane treatment device 1 applies DC power from the DC power supply 51 to the ejection cylinder 15 (cathode electrode 52) and the metal block 35 (anode electrode 53). As a result, plasma of the reforming gas is generated in the gap between the ejection cylinder 15 and the metal block 35. The generated plasma can be sprayed vertically toward the substrate W.

[0038] <Method of Processing Component> Next, an example of a method of processing a component will be described with reference to Fig. 2. Fig. 2 is a flowchart showing an example of a method of processing a component.

[0039] In step S101, a component (substrate W) is prepared. The substrate W is, for example, a member (component) used in a substrate processing apparatus. The substrate processing apparatus has a chamber to which a processing gas is supplied and in which plasma of the processing gas is generated. The substrate W to be prepared is, for example, a member (component) exposed to a processing space in the chamber and exposed to the processing gas and / or plasma of the processing gas.

[0040] In step S102, a film is formed on the surface of the part (substrate W). Here, the control unit 70 controls the DC power supply 51 to supply power to the first electrode and the second electrode (cathode electrode 52 and anode electrode 53), supplies the powder for melting from the feeder 20, and supplies the plasma generating gas from the first gas supply source 42A, thereby forming a thermal sprayed film on at least a part of the surface of the substrate W. As a result, the substrate W becomes a member (coated member) on which a film is formed on at least a part of the surface. The film formed on the substrate W is formed on the surface that will be exposed to the processing gas and / or the plasma of the processing gas when the part (coated member) is incorporated into the substrate processing apparatus. The film formed on the substrate W may be formed on the entire surface of the substrate W. Here, yttrium oxide (Y ２ O ３ ) film will be described.

[0041] The film covering the surface of the member (substrate W) is an yttria (Y)-based film (specifically, Y ２ O ３ , Y.O.F., Y.F. ３ etc.), aluminum (Al) based films (specifically, Al ２ O ３ , AlN, etc.), silicon (Si)-based films (specifically, Si, SiC, SiN, SiO ２ etc.), tungsten (W) based films (specifically, W, WC, WOx, etc.), or the like.

[0042] Furthermore, a method for forming a film covering the surface of a member (substrate W) may be, for example, to form a thermal sprayed film using a film processing apparatus 1 shown in FIG. 1. By forming a thermal sprayed film, the degree of freedom in selecting the material of the member (substrate W) is increased. Also, the film thickness can be increased. Also, a film can be selectively formed on a member having multiple surfaces.

[0043] The method for forming the film is not limited to thermal spraying, and may be any of CVD (Chemical Vapor Deposition), ALD (Atomic Layer Deposition), PVD (Physical Vapor Deposition), etc. These film formation methods can form dense films.

[0044] In step S103, the film formed in step S102 (for example, Y ２ O ３ In this example, the control unit 70 controls the DC power supply 51 to supply power to the first electrode and the second electrode (the cathode electrode 52 and the anode electrode 53), and supplies a modifying gas from the second gas supply source 42B to modify the sprayed film.

[0045] Furthermore, plasma of the modifying gas is generated in a reduced pressure environment (for example, within a range of 0.1 kPa to 90 kPa (approximately 0.75 Torr to 675 Torr)). The surface layer of the film is locally heated by a plasma jet (plasma flame) of the generated modifying gas. Then, by moving the arm that holds the housing part 30 relative to the member, the entire surface of the film is subjected to a plasma heat treatment. Furthermore, the film can be modified (for example, the film composition can be adjusted) by the plasma of the modifying gas.

[0046] The reforming process using the reforming gas includes oxidation process using plasma of oxygen (O)-containing gas, reduction process using a reducing gas (e.g., H ２ The treatment may be any of oxidation treatment using plasma of nitrogen (N)-containing gas, nitriding treatment using plasma of nitrogen (N)-containing gas, fluorination treatment using plasma of fluorine (F)-containing gas, cleaning treatment (degreasing treatment) using plasma of Ar gas, etc.

[0047] Furthermore, the length of the plasma jet (plasma flame) is longer in a reduced pressure atmosphere than in an atmospheric pressure atmosphere, which improves the workability of the treatment.

[0048] Furthermore, compared to an atmospheric pressure atmosphere, a reduced pressure atmosphere allows for more precise control of the gas ratio of the modifying gas, improving the controllability of the film composition. For example, in an atmospheric pressure atmosphere, oxygen in the air can make it difficult to control the film composition. In contrast, a reduced pressure atmosphere allows for improved control of the film composition by controlling the gas ratio of the modifying gas.

[0049] In step S104, the component (coating member) is installed in the substrate processing apparatus, where the heat-treated film is exposed to the processing space of the substrate processing apparatus (a space to which processing gas is supplied, a space to which plasma of the processing gas is generated, etc.).

[0050] In step S105, the substrate processing apparatus is seasoned by supplying a processing gas to a processing space of the substrate processing apparatus, generating plasma of the processing gas, and so on.

[0051] As described above, according to the method for treating a member, it is possible to manufacture a coated member having a film that has been subjected to heat treatment and modification treatment (see S101 to S103).

[0052] However, a film formed by thermal spraying has bubbles in the film, and there is a risk that corrosive gas (e.g., etching gas used in etching processes in substrate processing equipment) may penetrate into the coating through these bubbles. In addition, there is a risk that the thermal spray powder may be thermally oxidized or decomposed during thermal spraying. For example, YF ３ When a thermal spray coating is formed using the powder, the coating is ３ In addition, YF ３ Y is decomposed and oxidized ２ O ３ For example, when a thermal spray coating is formed using YOF powder, the coating contains not only YOF but also Y, which is formed by decomposition and oxidation of YOF. ２ O ３ Also includes.

[0053] In addition, when annealing a coated component with a film, the film is irradiated with an electron beam or laser to melt the outermost surface of the film, which increases its density. However, this heat treatment locally heats the component, which can lead to volume expansion and the formation of cracks in the film. Furthermore, heat treatment using electron beams or lasers cannot change the composition of the film. Furthermore, the irradiation area is narrow, which reduces workability.

[0054] Furthermore, in the annealing of a coated member having a film formed thereon, heat treatment performed in a high-temperature furnace can adjust the composition of the film and remove distortion by supplying gas into the furnace. However, since the entire coated member is heated in the furnace, there are limitations on the material of the member. For example, a member made of aluminum (Al, melting point 660°C) cannot be heat-treated in a high-temperature furnace (e.g., 1550°C).

[0055] In contrast, in the heat treatment (modification treatment) using low-pressure plasma shown in step S103, the film of the coated member is heated by low-pressure plasma, which allows the outermost surface of the film to be heated over a wider area than heat treatment using an electron beam or laser. This heat treatment melts the film and densifies it. This heat treatment also allows distortion of the film to be removed. Furthermore, by heating a wider area than heat treatment using electron beam or laser irradiation, workability is improved and the occurrence of cracks due to local volume expansion of the member can be suppressed. Furthermore, by using low-pressure plasma of a modifying gas, the composition of the film can be adjusted, etc.

[0056] Furthermore, in the heat treatment (modification treatment) using low-pressure plasma shown in step S103, the composition of the outermost surface of the film is adjusted, and the deeper part of the film is left unadjusted, thereby forming a film that is a composite of the unadjusted film and the adjusted film.

[0057] Furthermore, the heat treatment (modification treatment) using low-pressure plasma shown in step S103 allows greater freedom in selecting materials for the members.

[0058] 3A and 3B are cross-sectional views of a coated member illustrating an example of membrane treatment. In the example shown in Figures 3A and 3B, a member 300 is carried into membrane treatment apparatus 1. In membrane treatment apparatus 1, the treatments of steps S102 and S103 are performed.

[0059] 3A is an example of a cross-sectional view of the coated member after the process in step S102. As shown in the figure, a Y layer containing yttria (Y) and oxygen (O) is formed on a member 300 (corresponding to the substrate W in FIG. 1). ２ O ３ The sprayed film 310 is formed.

[0060] Next, in step S103, a modifying gas containing fluorine (F) (NF ３ The surface of the sprayed film 310 is heated by the low-pressure plasma. The right side of FIG. 3A is an example of a cross-sectional view of the coated member after the process of step S103. As shown in the figure, ２ O ３ The outermost surface of the sprayed film 310 is fluorinated, and a YOF film 311 containing yttria (Y), oxygen (O), and fluorine (F) can be formed.

[0061] 3B is an example of a cross-sectional view of the coated member after the process of step S102. As shown in the figure, YF containing yttria (Y) and fluorine (F) is deposited on a member 300 (corresponding to the substrate W in FIG. 1). ３ The sprayed film 320 is formed.

[0062] Next, in step S103, a reforming gas containing oxygen (O) (O ２ The surface of the thermal sprayed film 320 is heated by the low-pressure plasma of YF. The right side of FIG. 3B is an example of a cross-sectional view of the coated member after the process of step S103. As shown in the figure, ３ The outermost surface of the sprayed film 320 is fluorinated, and a YOF film 321 containing yttria (Y), oxygen (O), and fluorine (F) can be formed.

[0063] According to the example shown in FIGS. ２ In a substrate processing apparatus (plasma processing apparatus) that performs an etching process on a substrate using plasma, the outermost surface of the thermal sprayed film 320 can be modified in advance, thereby shortening the seasoning process (S105).

[0064] 4A to 4C are cross-sectional views of a coated member illustrating another example of film processing. In the example shown in FIGS. 4A to 4C, a silicon oxide film 340 is formed on the member 300 by CVD, ALD, PVD, or the like (step S102). The member 300 coated with the silicon oxide film 340 is carried into the film processing apparatus 1. The film processing apparatus 1 performs the processing of step S103.

[0065] 4A shows an example of a cross-sectional view of the coated member after the process of step S102. As shown in the figure, a silicon oxide film 340 (SiO) containing silicon (Si) and oxygen (O) is formed on a member 300 (corresponding to the substrate W in FIG. 1).

[0066] Next, in step S103, a reducing gas (H ２ The surface of the silicon oxide film 340 is heated by the low-pressure plasma. The right side of FIG. 4A is an example of a cross-sectional view of the coated member after the process of step S103. As shown in the figure, the top surface of the silicon oxide film 340 is reduced, and a silicon (Si) film 341 can be formed.

[0067] 4B is an example of a cross-sectional view of the coated member after the processing of step S102. As shown in the figure, a silicon oxide film 340 (SiO) containing silicon (Si) and oxygen (O) is formed on a member 300 (corresponding to the substrate W in FIG. 1).

[0068] Next, in step S103, an oxidizing gas (O ２ The surface of the silicon oxide film 340 is oxidized by the low-pressure plasma of 1000 W / m 2 . The right side of FIG. 4B shows an example of a cross-sectional view of the coated member after the process of step S103. As shown in the figure, the outermost surface of the silicon oxide film 340 is further oxidized, and the composition ratio (composition ratio of Si and O) is adjusted.

[0069] 4C is an example of a cross-sectional view of the coated member after the processing in step S102. As shown in the figure, a silicon oxide film 340 (SiO) containing silicon (Si) and oxygen (O) is formed on a member 300 (corresponding to the substrate W in FIG. 1).

[0070] Next, in step S103, a nitriding gas (N ２ The surface of the silicon oxide film 340 is heated by the low-pressure plasma. The right side of FIG. 4C is an example of a cross-sectional view of the coated member after the process of step S103. As shown in the figure, the top surface of the silicon oxide film 340 is nitrided, and a silicon nitride film 343 (SiN) can be formed.

[0071] The embodiments disclosed above include, for example, the following aspects. (Supplementary Note 1) A method for manufacturing a coated member, comprising: preparing a member; forming a thermal sprayed film on at least a portion of a surface of the member; and treating the surface of the thermal sprayed film with low-pressure plasma of a modifying gas. (Supplementary Note 2) The method for manufacturing a coated member according to Supplementary Note 1, wherein the treatment with low-pressure plasma of a modifying gas generates plasma within a range of 0.1 kPa to 90 kPa. (Supplementary Note 3) The method for manufacturing a coated member according to Supplementary Note 1 or Supplementary Note 2, wherein the thermal sprayed film is a film containing yttria and oxygen, and the modifying gas is a gas containing fluorine. (Supplementary Note 4) The method for manufacturing a coated member according to Supplementary Note 1 or Supplementary Note 2, wherein the thermal sprayed film is a film containing yttria and fluorine, and the modifying gas is a gas containing oxygen. (Appendix 5) A method for manufacturing a coated member, comprising the steps of preparing a member having a thermal sprayed film formed on at least a portion of its surface, and treating the surface of the thermal sprayed film with low-pressure plasma of a modifying gas. (Appendix 6) The method for manufacturing a coated member according to Appendix 5, wherein the step of treating with low-pressure plasma of a modifying gas generates plasma within a range of 0.1 kPa to 90 kPa. (Appendix 7) The method for manufacturing a coated member according to Appendix 5 or Appendix 6, wherein the thermal sprayed film is a film containing silicon and oxygen, and the modifying gas is a reducing gas. (Appendix 8) The method for manufacturing a coated member according to Appendix 5 or Appendix 6, wherein the thermal sprayed film is a film containing silicon and oxygen, and the modifying gas is an oxidizing gas. (Appendix 9) The method for manufacturing a coated member according to Appendix 5 or Appendix 6, wherein the thermal sprayed film is a film containing silicon and oxygen, and the modifying gas is a nitriding gas.(Supplementary Note 10) A film treatment apparatus comprising: a cylindrical nozzle body; a cylindrical first electrode provided at a tip of the nozzle body; a second electrode provided outside the first electrode; a feeder that supplies a powder to be melted; a first gas supply source that supplies a plasma generating gas; a second gas supply source that supplies a modifying gas; a power supply that supplies power to the first electrode and the second electrode; and a control unit, wherein the control unit is configured to be able to perform a process of controlling the power supply to supply power to the first electrode and the second electrode, supplying the powder to be melted from the feeder, and supplying a plasma generating gas from the first gas supply source to form a thermal sprayed film on at least a part of a surface of a member; and a process of controlling the power supply to supply power to the first electrode and the second electrode, and supplying a modifying gas from the second gas supply source to modify the thermal sprayed film.

[0072] The embodiments disclosed above also include, for example, the following aspects: (Supplementary Note 1) A method for producing a coated member, comprising the steps of: preparing a substrate; forming a thermal sprayed film on at least a part of the surface of the substrate; and exposing the surface of the thermal sprayed film to low-pressure plasma generated from a modifying gas to form a modified film on the thermal sprayed film. (Supplementary Note 2) The method for producing a coated member according to Supplementary Note 1, wherein the low-pressure plasma is generated in an environment in the range of 0.1 kPa to 90 kPa. (Supplementary Note 3) The thermal sprayed film is formed by exposing a modified gas to a low-pressure plasma generated in an environment in the range of 0.1 kPa to 90 kPa. ２ O ３ The reformed gas contains NF ３ The method for producing a coated member according to claim 1 or 2, wherein the modified film contains YOF. (Supplementary Note 4) The thermal sprayed film contains YF ３ The modified gas contains O ２ The method for producing a coated member according to claim 1 or 2, wherein the modified film contains YOF. (Supplementary Note 5) The thermal sprayed film contains SiO, and the modifying gas is H ２ The method for producing a coated member according to claim 1 or 2, wherein the modified film contains Si. (Supplementary Note 6) The method for producing a coated member according to claim 1 or 2, wherein the modified film contains SiO, and the modified gas contains O. ２ The modified film comprises SiO２ The method for producing a coated member according to claim 1 or 2, wherein the thermal sprayed film contains SiO, and the modifying gas is N ２ The method for producing a coated member according to Appendix 1 or Appendix 2, wherein the modified film contains SiN. (Appendix 8) A method for producing a coated member, comprising the steps of: preparing a member having a substrate and a thermal sprayed film formed on at least a part of the surface of the substrate; and exposing the surface of the thermal sprayed film to low-pressure plasma generated from a modifying gas to form a modified film on the thermal sprayed film. (Appendix 9) The method for producing a coated member according to Appendix 8, wherein the low-pressure plasma is generated in an environment in the range of 0.1 kPa to 90 kPa. (Appendix 10) The thermal sprayed film contains Y ２ O ３ The reformed gas contains NF ３ The method for producing a coated member according to claim 8 or 9, wherein the modified film contains YOF. (Supplementary Note 11) The thermal sprayed film contains YF ３ The modified gas contains O ２ The method for producing a coated member according to claim 8 or 9, wherein the modified film contains YOF. (Supplementary Note 12) The method for producing a coated member according to claim 8 or 9, wherein the modified film contains SiO, and the modified gas is H ２ The method for producing a coated member according to claim 8 or 9, wherein the modified film contains Si. (Supplementary Note 13) The method for producing a coated member according to claim 8 or 9, wherein the modified film contains SiO, and the modified gas contains O. ２ The modified film comprises SiO ２ The method for producing a coated member according to claim 8 or 9, wherein the thermal sprayed film contains SiO, and the modifying gas is N ２and the modified film contains SiN. (Supplementary Note 15) A film processing apparatus comprising: a chamber; a housing disposed in the chamber; a stage disposed in the chamber; a gas supply unit; a plasma generation unit; and a control unit, wherein the control unit is configured to perform the steps of: placing a member having a substrate and a thermal sprayed film formed on at least a portion of the surface of the substrate on the stage; controlling the gas supply unit to supply a modified gas into the housing; controlling the plasma generation unit to generate plasma from the modified gas in the housing in an environment in a range of 0.1 kPa to 90 kPa; and exposing a surface of the thermal sprayed film to the generated plasma to form a modified film on the thermal sprayed film. (Supplementary Note 16) The thermal sprayed film is a film processing apparatus comprising: a chamber; a housing disposed in the chamber; a stage disposed in the chamber; a gas supply unit; a plasma generation unit; and a control unit, wherein the control unit is configured to perform the steps of: placing a member having a substrate and a thermal sprayed film formed on at least a portion of the surface of the substrate on the stage; controlling the gas supply unit to supply a modified gas into the housing; controlling the plasma generation unit to generate plasma from the modified gas in the housing in an environment in a range of 0.1 kPa to 90 kPa; and exposing a surface of the thermal sprayed film to the generated plasma to form a modified film on the thermal sprayed film. ２ O ３ The reformed gas contains NF ３ The film treatment apparatus according to claim 15, wherein the modified film contains YOF. (Supplementary Note 17) The thermal sprayed film contains YF ３ The modified gas contains O ２ The film processing apparatus according to claim 15, wherein the modified film contains YOF. (Supplementary Note 18) The thermal sprayed film contains SiO, and the modifying gas is H ２ The film processing apparatus according to claim 15, wherein the modified film contains Si. (Supplementary Note 19) The thermal sprayed film contains SiO, and the modifying gas is O ２ The modified film comprises SiO ２ (Supplementary Note 20) The film treatment apparatus according to Supplementary Note 15, wherein the thermal sprayed film contains SiO, and the modifying gas is N ２ 16. The film processing apparatus of claim 15, wherein the modified film comprises SiN.

[0073] The present invention is not limited to the configurations described in the above embodiments, but may be combined with other elements, etc. These aspects can be changed without departing from the spirit of the present invention, and can be appropriately determined depending on the application form.

[0074] This application claims priority based on Japanese Patent Application No. 2024-120297, filed on July 25, 2024, the entire contents of which are incorporated herein by reference.

[0075] REFERENCE SIGNS LIST 1 membrane treatment device 10 ejection section 11 nozzle 20 feeder 30 housing section (housing) 40 gas supply section 42A, 42B gas supply source 51 DC power supply 52 cathode electrode 53 anode electrode 70 control section

Claims

1. A method for manufacturing a coated member, comprising: a step of preparing a substrate; a step of forming a thermal sprayed film on at least a portion of a surface of the substrate; and a step of exposing the surface of the thermal sprayed film to low-pressure plasma generated from a modifying gas to form a modified film on the thermal sprayed film.

2. The method for producing a coated member according to claim 1, wherein the low-pressure plasma is generated in an environment within a range of 0.1 kPa to 90 kPa.

3. The sprayed film is Y ２ O ３ The reformed gas contains NF ３ The method for producing a coated member according to claim 1 or 2, wherein the modified film contains YOF.

4. The thermal spray coating is YF ３ The modified gas contains O ２ The method for producing a coated member according to claim 1 or 2, wherein the modified film contains YOF.

5. The thermal spray coating contains SiO, and the modifying gas is H ２ The method for producing a coated member according to claim 1 or 2, wherein the modified film contains Si.

6. The thermal sprayed film contains SiO, and the modifying gas is O ２ The modified film comprises SiO ２ The method for producing a coated member according to claim 1 or claim 2, comprising:

7. The thermal sprayed film contains SiO, and the modifying gas is N ２ The method for producing a coated member according to claim 1 or 2, wherein the modified film contains SiN.

8. A method for producing a coated member, comprising the steps of: preparing a member having a substrate and a thermal sprayed film formed on at least a portion of the surface of the substrate; and exposing the surface of the thermal sprayed film to low-pressure plasma generated from a modifying gas to form a modified film on the thermal sprayed film.

9. The method for producing a coated member according to claim 8, wherein the low-pressure plasma is generated in an environment within a range of 0.1 kPa to 90 kPa.

10. The thermal sprayed film is Y ２ O ３ The reformed gas contains NF ３ The method for producing a coated member according to claim 8 or claim 9, wherein the modified film contains YOF.

11. The thermal spray coating is YF ３ The modified gas contains O ２ The method for producing a coated member according to claim 8 or claim 9, wherein the modified film contains YOF.

12. The thermal spray coating contains SiO, and the modifying gas is H ２ The method for producing a coated member according to claim 8 or claim 9, wherein the modified film contains Si.

13. The thermal spray coating contains SiO, and the modifying gas is O ２ The modified film comprises SiO ２ The method for producing a coated member according to claim 8 or claim 9, comprising:

14. The thermal spray coating contains SiO, and the modifying gas is N ２ The method for producing a coated member according to claim 8 or claim 9, wherein the modified film contains SiN.

15. A film processing apparatus comprising: a chamber; a housing disposed within the chamber; a stage disposed within the chamber; a gas supply unit; a plasma generation unit; and a control unit, wherein the control unit is configured to perform the steps of: placing on the stage a member having a substrate and a thermal sprayed film formed on at least a portion of the surface of the substrate; controlling the gas supply unit to supply a modifying gas into the housing; controlling the plasma generation unit to generate plasma from the modifying gas in the housing in an environment within a range of 0.1 kPa to 90 kPa; and exposing the surface of the thermal sprayed film to the generated plasma to form a modified film on the thermal sprayed film.

16. The thermal sprayed film is Y ２ O ３ The reformed gas contains NF ３ The membrane treatment apparatus of claim 15 , wherein the modified membrane comprises YOF.

17. The thermal spray coating is YF ３ The modified gas contains O ２ The membrane treatment apparatus of claim 15 , wherein the modified membrane comprises YOF.

18. The thermal spray coating contains SiO, and the modifying gas is H ２ The film treatment apparatus according to claim 15 , wherein the modified film contains Si.

19. The thermal spray coating contains SiO, and the modifying gas is O ２ The modified film comprises SiO ２ The membrane treatment device of claim 15 , comprising:

20. The thermal spray coating contains SiO, and the modifying gas is N ２ The film processing apparatus according to claim 15 , wherein the modified film comprises SiN.

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