Laminated isotope battery

Abstract

Provided is an isotope battery comprising a plurality of laminated isotope battery sheets, wherein each of the plurality of isotope battery sheets comprises: a semiconductor substrate; and a radiation source extending through the semiconductor substrate, and the semiconductor substrate comprises a first region of a first conductivity type disposed on the side surface of the radiation source and a second region of a second conductivity type disposed on the side surface of the first region. The isotope battery of the present invention has an effect of generating electrical energy with high energy density.

Description

Layered isotope battery

[0001] The present invention relates to an isotope battery.

[0002] This application claims the benefit of priority to Korean Patent Application No. 10-2024-0096587, dated July 22, 2024, and Korean Patent Application No. 10-2025-0097316, dated July 18, 2025, the entire contents of which are incorporated herein by reference.

[0003] An isotope battery is a battery that converts radiation emitted by a radioactive isotope into electrical energy by absorbing it through the surface of a pn junction semiconductor. This radiation generates electron-hole pairs in the space charge region within the pn junction semiconductor, and the resulting carriers exhibit the voltage-current characteristics of the isotope battery.

[0004] The present invention provides an isotope battery capable of generating electrical energy with high energy density.

[0005] In order to achieve the above technical task, the present invention provides an isotope battery comprising a plurality of stacked isotope battery sheets, each of the plurality of isotope battery sheets including: a semiconductor substrate; and a radiation source penetrating the semiconductor substrate, wherein the semiconductor substrate includes a first region of a first conductivity type arranged on a side of the radiation source and a second region of a second conductivity type arranged on a side of the first region.

[0006] The isotope battery of the present invention has the effect of generating electrical energy with high energy density.

[0007] The effects that can be obtained from the exemplary embodiments of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly derived and understood by those skilled in the art to which the exemplary embodiments of the present disclosure pertain from the following description. In other words, unintended effects resulting from practicing the exemplary embodiments of the present disclosure can also be derived by those skilled in the art from the exemplary embodiments of the present disclosure.

[0008] FIGS. 1A and 1B are cross-sectional side views showing an isotope battery according to embodiments of the present invention.

[0009] FIGS. 2A to 2C are plan views each showing a form in which the radiation source is placed within a through-hole according to embodiments of the present invention.

[0010] FIGS. 3A and 3B are plan views each showing a form in which the radiation source is placed within a slit according to embodiments of the present invention.

[0011] Figures 4 to 7 are cross-sectional side views each showing an isotope battery according to different embodiments of the present invention.

[0012] Figure 8 is a conceptual diagram schematically illustrating a non-volatile memory device according to one embodiment of the present invention.

[0013] Figure 9 is a cross-sectional side view showing an isotope battery according to one embodiment of the present invention.

[0014] FIG. 10A is a cross-sectional side view showing an isotope battery according to another embodiment of the present invention.

[0015] Figure 10b is a partially enlarged perspective view showing the first region, radiation source, and insulating layer of the isotope battery.

[0016] Figure 11 is a cross-sectional side view showing an isotope battery according to another embodiment of the present invention.

[0017] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the embodiments of the present invention may be modified in various different forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. It is preferable to interpret that the embodiments of the present invention are provided to more completely explain the present invention to those of ordinary skill in the art. Like numbers refer to like elements throughout. Furthermore, various elements and areas in the drawings are schematically drawn. Therefore, the present invention is not limited by the relative sizes or spacings depicted in the accompanying drawings.

[0018] While terms like "first" and "second" may be used to describe various components, these components are not limited by these terms. These terms are used solely to distinguish one component from another. For example, a first component could be referred to as a "second component," and vice versa, without departing from the scope of the present invention.

[0019] The terminology used in this application is only used to describe specific embodiments and is not intended to limit the inventive concept. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, it should be understood that the expressions “comprises” or “has” indicate the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, but do not exclude in advance the possibility of the presence or addition of one or more other features, numbers, operations, components, parts, or combinations thereof.

[0020] Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention pertains. Furthermore, it is to be understood that commonly used terms, such as those defined in dictionaries, should be interpreted to have a meaning consistent with their meaning within the relevant technical context, and should not be interpreted in an overly formal sense unless explicitly defined herein.

[0021] In some embodiments, where implementations are otherwise feasible, specific process sequences may be performed in a different order than described. For example, two processes described in succession may be performed substantially simultaneously, or in a reverse order from the described order.

[0022] In the accompanying drawings, variations in the shapes depicted may be expected, for example, depending on manufacturing techniques and / or tolerances. Therefore, embodiments of the present invention should not be construed as being limited to the specific shapes of the regions depicted herein, but should include, for example, changes in shapes resulting from the manufacturing process. All terms "and / or" used herein include each and every combination of one or more of the mentioned components. In addition, the term "substrate" used herein may mean the substrate itself, or a laminated structure including the substrate and a predetermined layer or film formed on the surface thereof. In addition, the "surface of the substrate" in this specification may mean the exposed surface of the substrate itself, or the outer surface of a predetermined layer or film formed on the substrate.

[0023]

[0024] Figure 1a is a cross-sectional side view showing an isotope battery (1) according to one embodiment of the present invention.

[0025] Referring to FIG. 1a, the isotope battery (1) may include a plurality of isotope battery sheets (10) stacked in the vertical direction V, or in the thickness direction of the substrate (100).

[0026] Each of the plurality of isotope battery sheets (10) may include a substrate (100) and a radiation source (200). The radiation source (200) may be arranged to penetrate the substrate (100).

[0027] The above substrate (100) may include a first surface and a second surface positioned opposite the first surface in the thickness direction (T) of the substrate (100). The first surface and the second surface may be the upper main surface and the lower main surface of the substrate (100), respectively.

[0028] The above-mentioned device (100) may include a first region (110) arranged on the side of the radiation source (200) and a second region (120) arranged on the side of the first region (110).

[0029] In general, as conceptually illustrated in FIG. 1A, the first region (110) and the second region (120) may be arranged adjacent to each other. The first region (110) and the second region (120) may be arranged alternately and / or repeatedly along the direction of the first surface and the second surface of the substrate (100), that is, in a transverse direction (C) perpendicular to the thickness direction (T) of the substrate (100). For example, the first region (110) and the second region (120) may form an interface extending in the thickness direction (T) of the substrate (100). At the interface, the first region (110) and the second region (120) may form a pn junction.

[0030] The radiation source (200) may be disposed within the substrate (100). For example, the radiation source (200) may extend through the entire substrate (100) in the thickness direction (T) of the substrate, for example, from the first surface (i.e., the upper main surface) to the second surface (i.e., the lower main surface). To this end, the radiation source (200) may be disposed within a through-hole (10) formed on the first surface of the substrate (100). The through-hole (101) may extend from the first surface of the substrate (100) toward the second surface. Optionally, the through-hole (101) may extend completely from the first surface of the substrate (100) to the second surface, as exemplarily illustrated in FIG. 1A.

[0031] The above-described substrate (100) may include, for example, a III-V group semiconductor material. The III-V group semiconductor material may include InAlP, InGaP, InAlGaP, ZnSe, AlAs, AlAsP, or yttria-stabilized zirconia (YSZ).

[0032] In some embodiments, the substrate (100) may include a diamond substrate, a SiC substrate, a GaN substrate, a Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / B2O3 substrate, a Sm2O3 / Bi2O3 / GeO2 / B2O3 substrate, a sapphire substrate, or a combination thereof, which may be undoped substrates.

[0033] In some other embodiments, the substrate (100) may include a diamond substrate, a SiC substrate, a GaN substrate, a Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / B2O3 substrate, a Sm2O3 / Bi2O3 / GeO2 / B2O3 substrate, a sapphire substrate, or a combination thereof, which may be substrates doped with a dopant.

[0034] In some other embodiments, the substrate (100) may have a chemical formula of AMO3 (wherein A is at least one selected from the group consisting of La, Ba, Sr, and K, and M is at least one selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr).

[0035] Specifically, the above-described (100) is BaSnO3, BaHfO3, BaZrO3, BaHf 1-x Ti x O3 (where 0 <x<1), Ba 1-x La x SnO3 (where 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3 (where 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x and may include at least one selected from the group consisting of LaAlO3 (wherein 0 <x<1).

[0036] In some embodiments, the substrate (100) may include a semiconductor substrate. In some embodiments, the substrate (100) may include a non-conductive substrate.

[0037] In some embodiments, the first region (110) may include a metal oxide having a band gap energy of 2.7 eV or more. In some embodiments, the metal oxide may have a chemical formula of AMO3 (wherein A is at least one selected from the group consisting of La, Ba, Sr, and K, and M is at least one selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr).

[0038] Specifically, the metal oxide is BaSnO3, BaHfO3, BaZrO3, BaHf 1-x Ti x O3 (where 0 <x<1), Ba 1-x La x SnO3 (where 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3 (where 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x and may include at least one selected from the group consisting of LaAlO3 (wherein 0 <x<1).

[0039] The above metal oxide is not only stable in high temperature and high humidity environments, but also has high carrier mobility, so it can efficiently absorb radiation emitted from a radiation source (200) and / or photons emitted from a photon generation layer (250) described later, thereby providing high energy conversion efficiency. In addition, since there is no inelastic collision in the carrier movement, there is no energy loss and it is advantageous for heat dissipation. For example, the above metal oxide has a 45 cm 2 / (Vs) or more, 80 cm 2 / (Vs) or more, 120 cm 2 / (Vs) above, further 300 cm 2 / (Vs) can have a high carrier mobility.

[0040] These metal oxides are bidirectionally doped materials and have the advantage of being able to provide high current or high voltage depending on the direction of the applied bias.

[0041] The first region (110) and the second region (120) can generate electron-hole pairs by radiation emitted from a radiation source (200). In one example, the first region (110) and the second region (120) can be formed of an inorganic layer, an organic layer, a dye-sensitized layer, or a combination thereof, and can generate power by forming electron-hole pairs by radiation.

[0042] The first region (110) may be doped with a dopant of the first conductivity type. The second region (120) may be doped with a dopant of the second conductivity type. In some embodiments, the dopant of the first conductivity type may be an n-type dopant and the dopant of the second conductivity type may be a p-type dopant. In some other embodiments, the dopant of the first conductivity type may be a p-type dopant and the dopant of the second conductivity type may be an n-type dopant. Those skilled in the art will understand that depending on the conductivity type of the dopant doped in each region, one of the first region (110) and the second region (120) may operate as a cathode and the other may operate as an anode. That is, if the dopant of the first conductivity type is an n-type dopant and the dopant of the second conductivity type is a p-type dopant, the first region (110) can act as an anode and the second region (120) can act as a cathode. Conversely, if the dopant of the first conductivity type is a p-type dopant and the dopant of the second conductivity type is an n-type dopant, the first region (110) can act as a cathode and the second region (120) can act as an anode.

[0043] The region doped with the above n-type dopant may be, for example, silicon or diamond doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony, which are elements of Group 15 of the periodic table, or may be a compound semiconductor doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony, which are elements of Group 15 of the periodic table. In the present specification, a compound semiconductor means a semiconductor composed of two or more elements, and may be, for example, silicon carbide, silicon oxide, aluminum phosphide (AlP), aluminum arsenide (AlAs), gallium arsenide (GaAs), or gallium nitride (GaN).

[0044] The region doped with the above p-type dopant may be, for example, silicon or diamond doped with elements of Group 13 of the periodic table, such as boron (B), aluminum (Al), gallium (Ga), or indium (In), or may be a compound semiconductor doped with elements of Group 13 of the periodic table, such as boron (B), aluminum (Al), gallium (Ga), or indium (In).

[0045] In some embodiments, the first region (110) and the second region (120) may include an organic material used in an organic layer that receives light and generates electricity, such as in the field of solar cells. For example, the first region (110) and the second region (120) may include a thiophene compound. Meanwhile, the first region (110) and the second region (120) may also be an organic-inorganic hybrid type by appropriately mixing the aforementioned inorganic and organic materials.

[0046] In some embodiments, a depletion region may be formed near the interface where the first region (110) and the second region (120) contact each other.

[0047] In some embodiments, the radiation source (200) may be provided within a through-hole (101) penetrating the substrate (100). The through-hole (101) may be formed on the first surface of the substrate (100). For example, the radiation source (200) may completely or partially fill the through-hole (101). In some embodiments, the radiation source (200) may be in contact with the outer edge of the through-hole (101). FIGS. 2A to 2C are plan views each showing a form in which the radiation source (200) is arranged within the through-hole (101) according to embodiments of the present invention.

[0048] Referring to FIG. 2a, the substrate (100) is provided with a plurality of through-holes (101) penetrating the substrate (100), and the radiation source (200) can be placed within the through-holes (101). The through-holes (101) can have a circular cross-section, as shown in FIG. 2a. Optionally, the through-holes (101) can have a cross-section of a regular polygon, such as a triangle, a square, a pentagon, or a hexagon.

[0049] The through-holes (101) may be formed by any method known to those skilled in the art. For example, the through-holes (101) may be formed by anisotropic etching, isotropic etching, laser irradiation, or the like. In some embodiments, the through-holes (101) may be formed by irradiating the substrate (100) with laser light. In some embodiments, the through-holes (101) may be formed by reactive ion etching (RIE).

[0050] In some embodiments, the through-holes (101) may be arranged in a predetermined rule or pattern. In some embodiments, the through-holes (101) may be arranged so that each center is located at a vertex of a series of virtual equilateral triangles.

[0051] By arranging the centers of the above through-holes (101) to be located at the vertices of virtual equilateral triangles, the number of radiation sources (200) that can be accommodated per unit area can be maximized. Accordingly, the energy density of the isotope battery (1) can be further improved.

[0052] In some embodiments, the first region (110) may be arranged to surround a side surface of the radiation source (200). In some embodiments, the second region (120) may be arranged to surround a side surface of the first region (110). Referring to FIG. 2A, the first region (110) has an annular shape surrounding the outer periphery of each radiation source (200), and the second region (120) surrounds the annular first region (110). The first region (110) may include a semiconductor material of a specific conductivity type, and the second region (120) may include a semiconductor material of a different conductivity type.

[0053] Referring to FIG. 2B, the side walls of the through-holes (101) may have a roughness. That is, the through-holes (101) may have concave and convex portions. The interface between the radiation source (200) and the first region (110) may have a roughness. In some embodiments, the interface between the first region (110) and the second region (120) may have a roughness.

[0054] The first region (110) may have a substantially constant lateral thickness as illustrated in FIG. 2B. Accordingly, the interface between the first region (110) and the second region (120) may have a shape corresponding to the interface between the radiation source (200) and the first region (110).

[0055] By having the side walls of the above through-holes (101) with unevenness, the contact area between the radiation source (200) and the first region (110) can be increased, thereby improving the efficiency of the radiation source (200). In addition, by having the interface between the first region (110) and the second region (120) with unevenness, the contact area between the first region (110) and the second region (120) can be increased, thereby improving the efficiency of the isotope cell (1).

[0056] Referring to Fig. 2c, each center of the through-holes (101) may be arranged to be located at the vertices of continuously arranged virtual isosceles triangles. As in Fig. 2a, each center of the through-holes (101) may not necessarily be located at the vertices of continuously arranged virtual equilateral triangles.

[0057] In some embodiments, the triangles in which the centers of the through-holes (101) are arranged may have different shapes. Accordingly, the through-holes (101) may be arranged somewhat irregularly.

[0058] In some embodiments, the radiation source (200) may be disposed within a slit penetrating the substrate (100). FIGS. 3A and 3B are plan views each illustrating a form in which the radiation source (200) is disposed within a slit (102) according to embodiments of the present invention. Referring to FIG. 3A, the substrate (100) may include a plurality of slits (102) extending parallel to one direction. In addition, the radiation source (200) may be provided within the slits (102). As illustrated in FIG. 3A, the slits (102) may be elongated in a first direction (R1), and the extended length is greater than the width of the slits (102) in a second direction (R2). The first direction (R1) is perpendicular to the thickness direction (T) of the substrate (100), and the second direction (R2) is perpendicular to the first direction (R1) and the thickness direction (T).

[0059] In some embodiments, the side of the radiation source (200) may contact the side of the slits (102). The radiation source (200) may contact the outer edge of the slit (120).

[0060] In some embodiments, the first region (110) may be arranged to face the elongated side surface of the radiation source (200). The first region (110) may face both elongated side surfaces of the radiation source (200). For example, the first region (110) may extend along two longitudinal side surfaces of the slit (102) extending in the first direction (R1). More preferably, as illustrated in FIG. 3A, the first region (110) may laterally completely surround the slit (102) extending in the longitudinal direction. In general, the first region (110) may be arranged to completely or at least partially surround the radiation source (200).

[0061] In some embodiments, the second region (120) may be positioned to face an elongated side of the first region (110). For example, the second region (120) may extend along a portion of the first region (110) that extends along the longitudinal side of the slit (102).

[0062] In some embodiments, the first region (110) may be arranged to surround a side surface of the radiation source (200). In some embodiments, the second region (120) may be arranged to at least partially surround a side surface of the first region (110). In some embodiments, as exemplarily illustrated in FIG. 3A, the second region (120) may completely surround the first region (110) in a lateral direction.

[0063] Referring to FIG. 3b, the side walls of the slits (102) may have a roughness. That is, the slits (102) may have a concave portion and a convex portion. The interface between the radiation source (200) and the first region (110) may have a roughness.

[0064] By having the side walls of the above slits (102) uneven, the contact area between the radiation source (200) and the first region (110) can be increased, thereby improving the efficiency of the radiation source (200).

[0065] Although FIGS. 1A to 3B illustrate that the entire portion of the substrate (100) other than the first region (110) is the second region (120), the present invention is not limited thereto. In FIGS. 1A to 3B, regions of different conductivity types or dopant concentrations may exist within the second region (120), and regions that are not doped with a specific conductivity type may exist.

[0066] Referring back to FIG. 1A, the plurality of isotope battery sheets (10) may be formed by stacking identical semiconductor dies. Each of the isotope battery sheets (10) may include a first upper electrode (132) on the first region (110) and a first lower electrode (152) on the lower portion of the first region (110). In other words, the first upper electrode (132) may be in electrical contact with the first region (110) at the first surface, and the first lower electrode (152) may be in electrical contact with the first region (110) at the second surface.

[0067] Additionally, each of the isotope battery sheets (10) may include a second upper electrode (134) on the upper portion of the second region (120) and a second lower electrode (154) on the lower portion of the second region (120). In other words, the second upper electrode (134) may be in electrical contact with the second region (120) at the first surface, and the second lower electrode (154) may be in electrical contact with the second region (120) at the second surface.

[0068] Each of the first upper electrode (132), the first lower electrode (152), the second upper electrode (134), and the second lower electrode (154) can substantially function as a current collector. Each of the first upper electrode (132), the first lower electrode (152), the second upper electrode (134), and the second lower electrode (154) is not particularly limited in type, size, shape, etc., as long as it has electrical conductivity without causing physical and chemical changes in the isotope battery sheet (10). For example, each of the first upper electrode (132), the first lower electrode (152), the second upper electrode (134), and the second lower electrode (154) can have a cylindrical shape, a tetrahedral shape, a hexahedral shape, a torus shape, or a pad shape. Additionally, each of the first upper electrode (132), the first lower electrode (152), the second upper electrode (134), and the second lower electrode (154) may have a form in which the central portion is hollow. In some embodiments, the second upper electrode (134) on the first surface may be a continuous layer including openings arranged to correspond to, for example, the first region (110), and the first upper electrodes (132) may be arranged within the openings. Similarly, on the second surface, the second lower electrode (154) may be a continuous layer including openings arranged to correspond to, for example, the first region (110), and the first lower electrodes (152) may be arranged within the openings.

[0069] In addition, for example, each of the first upper electrode (132), the first lower electrode (152), the second upper electrode (134), and the second lower electrode (154) may include a metal material such as gold (Au), silver (Ag), platinum (Pt), stainless steel, copper (Cu), aluminum (Al), nickel (Ni), or titanium (Ti), or may include a transparent oxide such as fluorine (F)-doped tin oxide (FTO) or indium oxide (ITO, In2O3), or may include a carbon-based compound such as carbon nanotubes, graphene, or graphene oxide.

[0070] In some embodiments, the radiation source (200) may include a radioisotope that emits beta rays. For example, the radiation source (200) may include tritium ( 3 H, tritium), Calcium-45( 45 Ca), nickel-63( 63 Ni), copper-67( 67 Cu), strontium-90( 90 Sr), promethium-147( 147 Pm), osmium-194( 194 OS), thulium-171( 171 Tm), thallium-204( 204 Tl), tantalum-182( 182 Ta), cadmium-115( 115 Cd), cadmium-113( 113 Cd), germanium-75( 75 Ge), cerium-141( 141 Ce), cerium-144( 144 Ce) and tungsten-185( 185W) may include one or more selected from the group consisting of; however, the present invention is not limited thereto.

[0071] In some embodiments, the radiation source (200) may include a radioisotope that emits alpha rays. For example, the radiation source (200) may include americium-241 ( 241 Am), americium-243( 243 Am), polonium-209( 209 Po), polonium-210( 210 Po), plutonium-238( 238 Pu), plutonium-239( 239 Pu), curium-242( 242 Cm), curium-244( 244 Cm), curium-249( 249 Cm), promethium-147( 147 Pm), uranium-238( 238 U), thorium-232( 232 Th), radium-226( 226 Ra), bismuth-210( 210 Bi), neptunium-237( 237 Np), europium-152( 152 Eu), francium-223( 223 Fr), astatine-210( 210 At), protactinium-231( 231 Pa), einsteinium-253( 253 Es), californium-252( 2520 Cf), and berkelium-249( 249Bk) may include one or more selected from the group consisting of; however, the present invention is not limited thereto.

[0072] The above radiation source (200) can be formed by any method known to those skilled in the art. For example, the above radiation source (200) can be formed by various methods such as plating, vapor deposition, and atomic layer deposition (ALD).

[0073] In some embodiments, the radiation source (200) may be formed by plating. When the radiation source (200) is formed by plating, the radiation source (200) may be formed by forming a seed layer and then performing electrolytic plating. Alternatively, the radiation source (200) may be formed by electroless plating.

[0074] The first lower electrode (152) of the isotope battery sheet (10) positioned above may be electrically connected to the first upper electrode (132) of the isotope battery sheet (10) positioned below it. In some embodiments, the first lower electrode (152) of the isotope battery sheet (10) positioned above and the first upper electrode (132) of the isotope battery sheet (10) positioned below it may be connected by a connector (140) such as a solder ball.

[0075] In one example, the connector (140) may include a conductive material. Here, the conductive material may include one or more selected from the group consisting of tin (Sn), indium (In), bismuth (Bi), antimony (Sb), copper (Cu), silver (Ag), zinc (Zn), and lead (Pb), for example. The number, spacing, arrangement, shape, etc. of the connectors (140) are not limited to those illustrated and may be changed according to the design. Referring to FIG. 1, the connector (140) may have a solder ball or solder bump shape.

[0076] The space between two vertically adjacent isotope cell sheets (10) can be filled with an insulator (160). The insulating layer (160) is not particularly limited as long as it is a material having electrical insulating properties, but may include, for example, one or more selected from the group consisting of silicate (e.g., TEOS), silicon nitride (SiN), hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, and aluminum oxide.

[0077] The isotope battery (1) illustrated in Fig. 1a can be obtained by manufacturing individual isotope battery sheets (10) and then stacking them. By manufacturing individual isotope battery sheets (10) and then stacking them, only defective isotope battery sheets (10) can be selected and excluded from the stacking process, thereby increasing the manufacturing yield of the isotope battery (1) and reducing the manufacturing cost.

[0078] The above plurality of isotope battery sheets (10) can be housed within a housing (190). In addition, the above plurality of isotope battery sheets (10) can be electrically connected to an external load by a conductor that passes through the housing (190) and is drawn outward.

[0079] In some embodiments, the housing (190) may further include an electromagnetic interference (EMI) shield (not shown) capable of shielding electromagnetic waves. The EMI shield may be formed on at least a portion of the inner surface and / or the outer surface of the housing (190). The EMI shield may include, for example, a metal such as copper or aluminum, a conductive polymer such as polyaniline, or a magnetic material such as iron oxide. In addition, the EMI shield may be provided in the form of a sheet, mesh, coating layer, spray coating, non-woven fabric, tape, or fabric layer. By faithfully providing the EMI shield to the housing (190), the electromagnetic compatibility (EMC) of the isotope cell (1) can be ensured. In addition, in some embodiments, the EMI shield may prevent or reduce beta rays or other radiation (e.g., alpha rays or gamma rays) from escaping from the housing.

[0080] The first upper electrodes (132) of the isotope battery sheet (10) arranged at the top of Fig. 1a may be electrically connected to each other and electrically connected to the first external electrode (15a) of the first polarity. In addition, the second lower electrode (154) of the isotope battery sheet (10) arranged at the bottom of Fig. 1a may be electrically connected to the second external electrode (15b) of the second polarity. The first external electrode (15a) and the second external electrode (15b) may be exposed to the outside of the housing (190) so as to be connected to an external load.

[0081] In some embodiments, the second lower electrodes (154) of the isotope battery sheet (10) disposed at the bottom in FIG. 1A may be electrically connected to each other while surrounding the first lower electrode (152). In some embodiments, the second lower electrodes (154) may be electrically connected to each other by a separate conductive line (not shown) and connected to the second external electrode (15b) exposed to the outside of the housing (190).

[0082]

[0083] Figure 1b is a cross-sectional side view showing an isotope battery (1a) according to another embodiment of the present invention.

[0084] Referring to FIG. 1b, the isotope battery (1a) may have a first isotope battery sheet (11) and a second isotope battery sheet (12) alternately and repeatedly laminated.

[0085] The above first isotope battery sheet (11) is generally the same as the isotope battery sheet (10) described with reference to Fig. 1a, so a detailed description thereof is omitted here.

[0086] The second isotope battery sheet (12) is substantially identical to each component of the first isotope battery sheet (11), but differs in that the dopant's conductivity type is opposite. That is, if the first region (110) of the first isotope battery sheet (11) is doped with a p-type, the first region (110) of the second isotope battery sheet (12) may be doped with an n-type. Conversely, if the first region (110) of the first isotope battery sheet (11) is doped with an n-type, the first region (110) of the second isotope battery sheet (12) may be doped with a p-type.

[0087] Similarly, if the second region (120) of the first isotope battery sheet (11) is doped p-type, the second region (120) of the second isotope battery sheet (12) may be doped n-type. Conversely, if the second region (120) of the first isotope battery sheet (11) is doped n-type, the second region (120) of the second isotope battery sheet (12) may be doped p-type.

[0088] The isotope battery (1a) illustrated in Fig. 1b can obtain higher voltage electric energy by increasing the number of unit batteries corresponding to individual radiation sources (200) connected in series.

[0089] Since the pn junctions are connected in series so that the total output voltage in Fig. 1b is the sum of the voltages generated at the individual pn junctions, the first external electrode (15a) and the second external electrode (15b) can have a higher operating voltage than in the isotope cell (1) of Fig. 1a.

[0090] Figure 4 is a cross-sectional side view showing an isotope battery (1b) according to one embodiment of the present invention.

[0091] The isotope battery (1b) illustrated in FIG. 4 is generally the same as the isotope battery (1) described with reference to FIGS. 1a to 3b, but differs in that a plurality of isotope battery sheets (10) are sealed by a molding member (192) and a plurality of isotope battery sheets (10) are mounted on a controller chip (300). Therefore, the following description will focus on these differences and omit descriptions of common parts. It will be understood by those skilled in the art that not only the isotope batteries (1, 1a) of FIGS. 1a to 3b, but also the isotope batteries of FIGS. 5, 7, 9, and 10a described below can be mounted on a controller chip (300) and / or sealed within a molding member (192).

[0092] Referring to FIG. 4, the plurality of isotope battery sheets (10) are mounted on a controller chip (300). In some embodiments, the controller chip (300) may include a power management integrated circuit (PMIC) that outputs electrical energy generated from the plurality of stacked isotope battery sheets (10) to the outside according to a predetermined rule.

[0093] The above plurality of isotope battery sheets (10) can be molded by a molding member (192). The molding member (192) can include, for example, an epoxy molding compound (EMC).

[0094] When the plurality of isotope battery sheets (10) are electrically connected to the controller chip (300) through the first and second lower electrodes (152, 154) provided on the lowermost isotope battery sheet (10) as exemplarily illustrated in FIG. 4, the first upper electrode (132) and the second upper electrode (134) of the uppermost isotope battery sheet (10) may act as dummy electrodes. In some embodiments, at least one of the first upper electrode (132) and the second upper electrode (134) disposed on the uppermost of the plurality of isotope battery sheets (10) may be exposed to the outside through the molding member (192).

[0095] In another embodiment, the first upper electrode (132) and the second upper electrode (134) disposed at the uppermost portion of the plurality of isotope battery sheets (10) may be completely covered by the molding member (192). In some embodiments, the upper surface of the isotope battery sheet (10) disposed at the uppermost portion of the plurality of isotope battery sheets (10) may be omitted from the first upper electrode (132) and the second upper electrode (134), and instead may be covered by a passivation layer or a molding member (192), or a passivation layer and a molding member (192).

[0096] The electrical energy generated from the plurality of isotope battery sheets (10) can be supplied to an external load through external terminals (310a, 310b) provided to the controller chip (300). In Fig. 4, the plurality of isotope battery sheets (10) are illustrated as being mounted on top of the controller chip (300), but the present invention is not limited thereto.

[0097]

[0098] Figure 5 is a cross-sectional side view showing an isotope battery (1c) according to another embodiment of the present invention.

[0099] Referring to FIG. 5, the isotope battery (1c) may include a plurality of isotope battery sheets (10b) stacked in a vertical direction (V), i.e., in the thickness direction of the substrate (100).

[0100] The above isotope battery sheet (10b) differs from the isotope battery sheet (10) of Fig. 1a in that the lower electrodes (152, 154) and the connector (140) are omitted. Therefore, the following description will focus on these differences, and the description of the common parts will be omitted.

[0101] The above isotope battery sheet (10b) includes a first upper electrode (132) and a second upper electrode (134) on the upper surface. In some embodiments, the isotope battery sheets (10b) of the plurality of stacked isotope battery sheets (10b) may all be identical semiconductor dies.

[0102] The first upper electrode (132) and the second upper electrode (134) of the isotope battery sheet (10b) positioned at the bottom can be in direct contact with the bottom surfaces of the first region (110) and the second region (120), respectively, of the isotope battery sheet (10b) positioned at the top thereof. In other words, on each isotope battery sheet (10b), the first upper electrode (132) and the second upper electrode (134) are provided only on the first surface, which is the upper main surface, and the second surface, which is the lower main surface, can be in electrical contact with the first upper electrode (132) and the second upper electrode (134) of the isotope battery sheet (10b) positioned directly below it.

[0103] The above isotope battery (1c) can be configured more compactly since the lower electrodes (152, 154) and the connector (140) are omitted, thereby increasing the energy density. Optionally, the first regions (110) of the isotope battery sheet (10b) and the second regions (120) of the adjacent isotope battery sheet (10b) can be arranged to be in direct contact with each other. In this case, the electrodes between the adjacent isotope battery sheets within the stack can be omitted.

[0104]

[0105] Fig. 6a is a side cross-sectional view showing an isotope battery (1d) according to another embodiment of the present invention. Fig. 6b is a plan view of an isotope battery sheet of the isotope battery of Fig. 6a. Fig. 6c is a cross-sectional view showing a cross-section taken along line XX of Fig. 6b.

[0106] Referring to FIG. 6, the isotope battery (1d) may include a plurality of stacked isotope battery sheets (10c).

[0107] The isotope battery sheet (10c) illustrated in FIGS. 6A to 6C differs primarily from the isotope battery sheet illustrated in FIG. 1A in the structure of the cavity (105) in which the radiation source (200) is disposed. As exemplarily illustrated in FIG. 6A, the cavity (105) has a recessed shape with a step. The cavity (105) may include a trench (103) or recess formed in the first surface of the substrate (100). In addition, the cavity (105) may include one or more through-holes (101) extending between the bottom of the trench (103) and the second surface of the substrate (100).

[0108] The above isotope battery sheet (10c) may include a trench (103) extending along the upper surface of the substrate (100) and a through-hole (101) extending from the bottom surface of the trench (103) to the lower surface of the substrate (100). As illustrated in FIG. 6b, the trench (103) may extend longitudinally in a first direction (R1), and the through-hole (101) may extend vertically from the bottom surface of the trench (103). In some embodiments, a plurality of through-holes (101) may be arranged in the first direction (R1) for one trench (103), as illustrated in FIGS. 6b and 6c.

[0109] A radiation source (200) may be provided inside the trench (103) and the plurality of through-holes (101). The radiation source (200) may include a first portion (210) extending in a longitudinal direction, which is a first direction (R1) of the trench (103), inside the trench (103), and may be disposed within the first trench (103). In addition, the radiation source (200) may include a second portion (220) extending from within the through-hole (101) to a lower surface of the substrate (100).

[0110] The width direction (i.e., the second direction (R2)) dimension of the first portion (210) may be larger than the width direction dimension of the second portion (220). Here, the width direction is a direction perpendicular to the direction in which the trench (103) extends (i.e., the first direction (R1)). The width direction dimension of the first region (110) corresponding to the first portion (210) may be larger than the width direction dimension of the first region (110) corresponding to the second portion (220).

[0111] The first region (110) of the substrate (100) may have a generally constant thickness from the surface of the radiation source (200).

[0112]

[0113] Figure 7 is a cross-sectional side view showing an isotope battery (1e) according to another embodiment of the present invention.

[0114] Referring to FIG. 7, the isotope cell (1e) includes a plurality of substrates (100) stacked in a vertical direction (V). As described above, the substrate (10) may include a first surface, which is an upper main surface, and a second surface, which is a lower main surface, which is located opposite the substrate (100) in the thickness direction (T). In addition, each substrate (100) includes a first region (110) having a first conductivity type and a second region (120) having a second conductivity type. The first region (110) and the second region (120) form a pn junction at an interface (IF) therebetween. Furthermore, the first region (110) and the second region (120) of each substrate (100) may be alternately arranged to be adjacent to each other in a transverse direction (C) extending transversely to the thickness direction (T).

[0115] As schematically illustrated in Fig. 7, the interfaces (IF) of each of the laminated substrates (100) are aligned in the vertical direction (V), so that the interfaces (IF) can overlap each other. As a result, the laminates are divided such that the first zone (Z1) and the second zone (Z2) are located on opposite sides with respect to the interfaces (IF). The plurality of substrates (100) have the first zone (Z1) and the second zone (Z2) adjacent to each other with the interface (IF) therebetween. Each of the plurality of substrates (100) corresponds to one isotope battery sheet (10d).

[0116] Each of the plurality of substrates (100) includes a plurality of radiation sources (200) extending vertically therethrough. A plurality of radiation sources (200) may be provided in each of a first zone (Z1) and a second zone (Z2) of the substrate (100). The radiation sources (200) of the first zone (Z1) may be arranged symmetrically with respect to the interface (IF) with respect to the radiation sources (200) of the second zone (Z2).

[0117] In one substrate (100), the first zone (Z1) and the second zone (Z2) may have different conductivity types. If the first zone (Z1) is a first zone (110) of the first conductivity type with respect to the interface (IF), the second zone (Z2) is a second zone (120) of the second conductivity type. Conversely, if the first zone (Z1) is a second zone (120) of the second conductivity type with respect to the interface (IF), the second zone (Z2) is a first zone (110) of the first conductivity type.

[0118] In addition, in the first zone (Z1), two vertically adjacent substrates (100) have different conductivity types. That is, if the substrate (100) positioned at the top in the first zone (Z1) is a first region (110) of the first conductivity type, the substrate (100) positioned below with the insulating layer (162) interposed therebetween is a second region (120) of the second conductivity type. Similarly, if the substrate (100) positioned at the top in the first zone (Z1) is a second region (120) of the second conductivity type, the substrate (100) positioned below with the insulating layer (162) interposed therebetween is a first region (110) of the first conductivity type.

[0119] Furthermore, in the second zone (Z2), two vertically adjacent substrates (100) have different conductivity types. That is, if the substrate (100) positioned at the top in the second zone (Z2) is a first region (110) of the first conductivity type, the substrate (100) positioned below with the insulating layer (162) therebetween is a second region (120) of the second conductivity type. Similarly, if the substrate (100) positioned at the top in the second zone (Z2) is a second region (120) of the second conductivity type, the substrate (100) positioned below with the insulating layer (162) therebetween is a first region (110) of the first conductivity type.

[0120] In the first zone (Z1), two vertically adjacent substrates (100) are electrically connected to each other. In addition, in the second zone (Z2), two vertically adjacent substrates (100) are electrically connected to each other. In some embodiments, a pair of vertically adjacent substrates (100) may be electrically connected by a current collector (170). In some embodiments, the current collector (170) may be provided on a side surface of the stacked semiconductor substrates (100). That is, the current collector (170) connects lateral side end faces of the neighboring substrates (110) to each other, wherein the lateral side end faces of each substrate (100) extend between the first surface and the second surface. The current collector (170) connecting the semiconductor substrates (100) of the first zone (Z1) may be disposed at an end face that is spaced the furthest apart from each other in the second zone (Z2). Additionally, the current collector (170) connecting the semiconductor substrates (100) of the second zone (Z2) can be placed at the end furthest from the first zone (Z1).

[0121] In some embodiments, the current collector (170) may be alternately provided on both sides of the plurality of stacked isotope battery sheets (10d). That is, if the Nth and (N+1)th isotope battery sheets (10d) of the plurality of isotope battery sheets (10d) are connected to the current collector (170) on one side, the (N+1)th and (N+2)th isotope battery sheets (10d) may be connected to the current collector (170) on the other side. An insulating barrier (180) may be provided on the outside of the current collector (170) to protect the current collector (170). In some embodiments, the insulating barrier (180) may extend vertically over the entire height of the plurality of stacked isotope battery sheets (10d).

[0122] In some embodiments, the radiation sources (200) penetrating each of the plurality of stacked semiconductor substrates (100) may be aligned in a vertical direction. That is, the radiation sources (200) of the substrate (100) positioned above may be aligned vertically with the radiation sources (200) of the substrate (100) positioned below. For example, the through-holes in which the radiation sources (200) are arranged may be aligned in a vertical direction (V) so that their central axes have the same axis. Although not specifically illustrated in FIG. 7, the plurality of through-holes may be arranged in the substrate (100) such that the center of each through-hole is located at a vertex of an imaginary equilateral triangle.

[0123] In some embodiments, the radiation sources (200) may extend vertically through the plurality of stacked semiconductor substrates (100).

[0124]

[0125] Figure 8 is a conceptual diagram schematically illustrating a nonvolatile memory device (2) according to one embodiment of the present invention.

[0126] Referring to FIG. 8, the non-volatile memory device (2) may include a plurality of semiconductor memory devices (21a, 21b, 21c, 21d) and a memory control device (25) configured to control their operations.

[0127] In some embodiments, the plurality of semiconductor memory devices (21a, 21b, 21c, 21d) are vertically stacked, and each of them may have a through electrode (211). The through electrode (211) may include a through silicon via (TSV). Each of the plurality of semiconductor memory devices (21a, 21b, 21c, 21d) may be electrically connected to the memory control device (25) through the through electrode (211). Each of the plurality of semiconductor memory devices (21a, 21b, 21c, 21d) may be a dynamic random access memory (DRAM) chip.

[0128] The above non-volatile memory device (2) may further include an isotope battery (27) configured to supply power to the memory control device (25). The isotope battery (27) may be any of the above-described isotope batteries (1, 1a, 1b, 1c, 1d, 1e).

[0129] DRAM devices have significantly faster read and write speeds than flash memory, but have the disadvantage of losing stored information when power is cut off. The nonvolatile memory device (2) of Fig. 8 uses a DRAM element as a memory element, so it has fast read and write speeds, and because it is continuously powered by an isotope battery (27), the information stored in the DRAM device is maintained without being lost, so it can be used as a portable data storage device.

[0130]

[0131] Fig. 9 is a cross-sectional side view showing an isotope cell (1f) according to one embodiment of the present invention. The isotope cell (1f) of Fig. 9 differs from the isotope cell (1) shown in Fig. 1a in that it further includes a photon generation layer (250) around the radiation source (200), and the following description will focus on this difference.

[0132] Referring to FIG. 9, the photon generation layer (250) may be any material layer capable of emitting photons in response to radiation particles, such as alpha rays, emitted from the radiation source (200). In some embodiments, the radiation source (200) may be a material that emits alpha rays, and since such materials have been described with reference to FIG. 1A, a detailed description thereof will be omitted herein.

[0133] For example, the photon generation layer (250) may employ materials such as Ba2Ca(BO3)2, BaHfO3, BaI2:Ce, BeO, BaF2, BaMgF4, Cs2LiLuCi6:Ce, K2YF5, KCaF3, YI3:Ce, etc., but is not limited thereto. Various examples of the photon generation layer (250) are disclosed at https: / scintillator.lbl.gov / inorganic-scintillator-library / .

[0134] The photon generation layer (250) can emit photons in response to alpha rays incident from the radiation source (200). The photons generated in the photon generation layer (250) can be incident on the junction region between the first region (110) and the second region (120), and electrical energy can be generated by the photons.

[0135] Fig. 10a is a side cross-sectional view showing an isotope battery (1g) according to another embodiment of the present invention. Fig. 10b is a partially enlarged perspective view showing the first region (110), the radiation source (200), and the insulating layer (162) of the isotope battery (1g). The isotope battery (1g) shown in Figs. 10a and 10b differs from the isotope battery (1) shown in Fig. 1a in that the radiation source (200) has a hollow (annular) shape, and the following description will focus on this difference.

[0136] Referring to FIGS. 10A and 10B, the radiation source (200) may have a hollow tube shape. In some embodiments, the hollow central portion of the radiation source (200) may be filled with an insulating layer (162). In some other embodiments, the central portion may be filled with the substrate (100) or a semiconductor layer derived therefrom. The radiation source (200) may extend along the interface with the first region (110) while having a substantially constant thickness.

[0137] Since the interior of the above radiation source (200) is filled with an insulating layer (162), the amount of radiation source required to form the radiation source (200) can be reduced. Since the price of radiation sources is high, by forming a hollow radiation source (200) in this way, an isotope battery (1g) can be manufactured inexpensively.

[0138] Fig. 11 is a cross-sectional side view showing an isotope battery (1h) according to another embodiment of the present invention. The isotope battery (1h) illustrated in Fig. 11 differs from the isotope battery (1) illustrated in Fig. 1a in that it further specifies the external electrodes (15a, 15b), and the following description will focus on these differences.

[0139] Referring to FIG. 11, the isotope battery (1h) includes a first external electrode (15a) and a second external electrode (15b) to supply electrical energy to an external load.

[0140] It includes conductors (15) extending within an insulator (164) to connect the first external electrode (15a) to the first upper electrodes (132) of the isotope battery sheet (10). The conductors (15) can be electrically connected only to the first upper electrodes (132).

[0141] In some embodiments, the conductors (15) may include a first conductor (15h) and a second conductor (15v) extending in different directions within the insulator (164). The second conductor (15v) may electrically connect the first conductor (15h) and the first upper electrode (132). The first conductor (15h) may be physically and / or electrically connected to the first external electrode (15a). In some embodiments, the first conductor (15h) may extend horizontally and the second conductor (15v) may extend vertically, but the present invention is not limited thereto.

[0142] In some embodiments, the second upper electrodes (134) of the isotope battery sheet (10) closest to the first external electrode (15a) may be omitted.

[0143] The second external electrode (15b) may also be electrically connected to the isotope battery sheets (10) in a similar manner to the first external electrode (15a). A person skilled in the art may envision the wiring connection between the second external electrode (15b) and the isotope battery sheets (10) with reference to the wiring connection between the first external electrode (15a) and the isotope battery sheets (10) described above.

[0144] While the embodiments of the present invention have been described in detail above, those skilled in the art will appreciate that various modifications and variations can be made to the present invention without departing from the spirit and scope of the invention as defined in the appended claims. Therefore, modifications to future embodiments of the present invention will not depart from the scope of the invention.

Claims

1. Stacked multiple isotope battery sheets; and A first external electrode of a first polarity and a second external electrode of a second polarity electrically connected to the plurality of isotope battery sheets so as to transmit electrical energy generated from the plurality of stacked isotope battery sheets to an external load; Including, Each of the above multiple isotope battery sheets: semiconductor substrate; and A radiation source penetrating the semiconductor substrate; Including, An isotope cell, wherein the semiconductor substrate comprises a first region of a first conductivity type arranged on a side of the radiation source and a second region of a second conductivity type arranged on a side of the first region.

2. In paragraph 1, An isotope battery characterized in that the radiation source is placed within a through-hole penetrating the semiconductor substrate.

3. In paragraph 2, An isotope battery characterized in that the semiconductor substrate includes a plurality of through-holes, and the radiation source is provided inside each of the plurality of through-holes.

4. In paragraph 3, An isotope battery characterized in that the plurality of through-holes are arranged on the semiconductor substrate so that each center is located at a vertex of an imaginary equilateral triangle.

5. In paragraph 2, An isotope battery characterized in that the first region is arranged to surround a side of the radiation source, and the second region is arranged to surround a side of the first region.

6. In paragraph 2, An isotope cell characterized in that the radiation source is placed within a slit penetrating the semiconductor substrate.

7. In paragraph 6, An isotope cell characterized in that the semiconductor substrate includes a plurality of slits, and the radiation source is provided inside each of the plurality of slits.

8. In paragraph 6, An isotope battery characterized in that the first region is arranged to face the elongated side of the radiation source, and the second region is arranged to face the elongated side of the first region.

9. In paragraph 1, An isotope battery characterized in that the plurality of isotope battery sheets are identical dies.

10. In paragraph 1, An exclusive battery characterized in that the above plurality of isotope battery sheets are electrically connected to each other by solder balls.

11. In paragraph 1, An isotope battery characterized in that it further includes a controller chip provided on one side of the plurality of stacked isotope battery sheets and capable of controlling the output of electric energy generated from the plurality of isotope battery sheets.

12. In paragraph 11, An isotope battery characterized in that the above-mentioned laminated plurality of isotope battery sheets are molded using a molding resin.

13. In paragraph 12, An isotope battery characterized in that at least one dummy electrode is exposed through the molding resin.

14. In paragraph 1, Each of the plurality of isotope battery sheets includes a first electrode provided on the first region and a second electrode provided on the second region, An isotope battery, characterized in that the first electrode and the second electrode of one isotope battery sheet are in contact with the first region and the second region of the isotope battery sheet disposed thereon, respectively.

15. In paragraph 1, The above radiation sources are: a first portion provided in a trench extending along one surface of the semiconductor substrate; and A second portion extending from the bottom surface of the trench to the other surface of the semiconductor substrate; An isotope battery characterized by including:

16. In paragraph 15, An isotope battery characterized in that the width dimension of the first portion is larger than the width dimension of the second portion.

17. In paragraph 15, An isotope battery characterized in that the width dimension of the first region corresponding to the first portion is larger than the width dimension of the first region corresponding to the second portion.

18. A plurality of stacked semiconductor substrates; and A plurality of radiation sources penetrating the semiconductor substrate; Including, The plurality of stacked semiconductor substrates include a first zone and a second zone adjacent to each other with an interface therebetween, In one semiconductor substrate, the first zone and the second zone have different conductivity types, An isotope cell in which two vertically adjacent semiconductor substrates in the first region have different conductivity types.

19. In paragraph 18, An isotope battery characterized in that the radiation sources of the first zone are arranged symmetrically with respect to the interface with respect to the radiation sources of the second zone.

20. A plurality of semiconductor memory devices stacked on each other with through electrodes; A memory control device configured to control the operation of the plurality of semiconductor memory devices through the through electrode; and The isotope battery of claim 1 configured to supply power to the memory control device; A non-volatile memory device containing:

21. In paragraph 20, A non-volatile memory device characterized in that the semiconductor memory device is a DRAM chip.

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