Power source switching device and inspection system

Abstract

An inspection system 1B inspects defect locations in a semiconductor sample 2, and comprises a power source switching device 10B, an OBIRCH analysis device 21, a light emission analysis power source 22, a heat generation analysis power source 23, a system control device 24, etc. The power source switching device 10B includes switches 11, 12, a switching control circuit 13B, an insulated power source 14B, and an insulated signal transmission unit 15. The switches 11, 12 select one from among the OBIRCH analysis device 21, the light emission analysis power source 22, and the heat generation analysis power source 23 to connect to the semiconductor sample 2. The insulated power source 14B is provided on a path supplying power from the system control device 24 to the switching control circuit 13B, and electrically insulates the system control device 24 and the switching control circuit 13B from each other. By having this configuration, it is possible to achieve an inspection system capable of performing inspection of defect locations in a semiconductor sample by OBIRCH analysis technology and other analysis technologies with high efficiency and low noise.

Description

Power supply switching device and inspection system

[0001] The present disclosure relates to a system for inspecting semiconductor samples for defects, and a power supply switching device for switching power supply devices connected to the semiconductor samples in the system.

[0002] OBIRCH (Optical Beam Induced Resistance Change) analysis technology is known as a technology for inspecting defective portions of semiconductor samples (see Patent Document 1). In the OBIRCH analysis technology, a current is passed through a semiconductor integrated circuit sample, and the semiconductor sample is irradiated and scanned with a laser beam, thereby detecting changes in the current flowing through the semiconductor sample, thereby inspecting defective portions of the semiconductor sample.

[0003] Furthermore, optical emission analysis and heat generation analysis are also known as techniques for inspecting defects in semiconductor samples. These analysis techniques inspect defects in semiconductor samples by observing the optical emission and heat generation in the semiconductor sample when a voltage is applied to the semiconductor sample.

[0004] In each of the OBIRCH analysis technology, optical emission analysis technology, and heat generation analysis technology, a dedicated power supply is connected to the semiconductor sample. In the OBIRCH analysis technology, a constant voltage or current is applied to the semiconductor sample from the power supply, and changes in the output electrical signal associated with the laser beam scanning are detected. In the optical emission analysis technology, a constant voltage is applied to the semiconductor sample from the power supply, and the light emission state of the semiconductor sample is observed. In the heat generation analysis technology, a voltage whose value changes periodically over time is applied to the semiconductor sample from the power supply, and the heat generation state of the semiconductor sample is observed in synchronization with this periodic change in voltage value.

[0005] Japanese Patent Application Publication No. 6-300824

[0006] However, there is a demand for applying other analytical techniques (emission analysis technique, heat generation analysis technique) to semiconductor samples in addition to OBIRCH analytical technique to efficiently inspect defective locations in semiconductor samples using these analytical techniques. However, the inventors have found that simply combining these analytical techniques into a system configuration can result in noise that is thought to be caused by the combination appearing in the OBIRCH analytical results.

[0007] The present invention provides an inspection system that can inspect semiconductor samples for defects using OBIRCH analysis technology and other analysis technologies with high efficiency and low noise, and also provides a power supply switching device for use in such an inspection system.

[0008] An embodiment is a power supply switching device that selects one of a plurality of devices including an OBIRCH analysis device and one or more power supply devices, and connects a first terminal and a second terminal of the selected device to a semiconductor sample, and includes: (1) a first switch that selects one of the first terminals of each of the plurality of devices and electrically connects it to the semiconductor sample, (2) a second switch that selects one of the second terminals of each of the plurality of devices and electrically connects it to the semiconductor sample, (3) a switching control circuit that simultaneously selects the first terminal by the first switch and the second terminal by the second switch for a common device, and (4) an isolated power supply that is provided on a path that supplies power from an external device to the switching control circuit and electrically isolates the external device from the switching control circuit.

[0009] An embodiment is an inspection system for inspecting defective portions of a semiconductor sample, and the inspection system includes: (1) a plurality of devices including an OBIRCH analysis device and one or more power supply devices; (2) a power supply switching device configured as described above that selects one of the plurality of devices and connects a first terminal and a second terminal of the selected device to the semiconductor sample; (3) a laser light irradiation device that irradiates and scans the semiconductor sample with a laser beam when the OBIRCH analysis device is selected by the power supply switching device and connected to the semiconductor sample; and (4) an observation device that observes the semiconductor sample when the power supply device is selected by the power supply switching device and connected to the semiconductor sample.

[0010] According to the power supply switching device and inspection system of the embodiment, it is possible to inspect defective portions of semiconductor samples using the OBIRCH analysis technique and other analysis techniques with high efficiency and low noise.

[0011] FIG. 1 is a diagram showing the configuration of an inspection system 1A of a comparative example. FIG. 2 is a diagram showing the configuration of an inspection system 1B of this embodiment. FIG. 3 is a diagram showing an example of the configuration of an isolated power supply 14B of a power supply switching device 10B. FIG. 4 is a diagram showing an example of the configuration of an isolated signal transmission unit 15 of a power supply switching device 10B. FIG. 5 is an image showing the result of an OBIRCH analysis when the inspection system 1A shown in FIG. 1 is used. FIG. 6 is an image showing the result of an OBIRCH analysis when the inspection system 1B shown in FIG. 2 (however, the isolated signal transmission unit 15 is not provided) is used.

[0012] Hereinafter, embodiments of a power supply switching device and an inspection system will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same elements are designated by the same reference numerals, and duplicate explanations will be omitted. The present invention is not limited to these examples, but is defined by the claims, and is intended to include all modifications within the meaning and scope of the claims.

[0013] First, the configuration of a comparative example will be described. In order to efficiently inspect semiconductor samples for defects using other analysis techniques (emission analysis technique, heat generation analysis technique) in addition to the OBIRCH analysis technique, an inspection system 1A such as that shown in FIG. 1 can be considered.

[0014] 1 is a diagram showing the configuration of an inspection system 1A of a comparative example. The inspection system 1A is a system for inspecting defective portions of a semiconductor sample 2, and includes a power supply switching device 10A, an OBIRCH analysis device 21, an optical emission analysis power supply 22, a heat generation analysis power supply 23, a system control device 24, a laser light irradiation device 31, an optical emission analysis camera 32, and a heat generation analysis camera 33. The power supply switching device 10A includes a switch 11, a switching control circuit 13A, and an apparatus power supply 14A.

[0015] The power supply switching device 10A is electrically connected to the OBIRCH analyzer 21 via a cable 41, to the optical emission analysis power supply 22 via a cable 42, to the heat generation analysis power supply 23 via a cable 43, to the system control device 24 via cables 44 and 45, and to the semiconductor sample 2 via a cable 46. The cables 41 to 46 may be of any type, but in the following description they will be described as being coaxial cables having an inner conductor (core wire) and an outer conductor.

[0016] The outer conductors of the coaxial cables 41 to 46 are connected to a common ground potential (device GND) within the power supply switching device 10A. The outer conductor of the coaxial cable 41 is connected to a second end of the OBIRCH analysis device 21. The outer conductor of the coaxial cable 42 is connected to a second end of the optical emission analysis power supply 22. The outer conductor of the coaxial cable 43 is connected to a second end of the heat generation analysis power supply 23.

[0017] The second ends of the OBIRCH analysis device 21, the optical emission analysis power supply 22, and the heat generation analysis power supply 23 are connected to the ground potential of each device. The outer conductor of the coaxial cable 46 is connected to the semiconductor sample 2.

[0018] The switch 11 of the power supply switching device 10A is connected to a first end of the OBIRCH analysis device 21 via the inner conductor of a coaxial cable 41, to a first end of the light emission analysis power supply 22 via the inner conductor of a coaxial cable 42, to a first end of the heat generation analysis power supply 23 via the inner conductor of a coaxial cable 43, and to the semiconductor sample 2 via the inner conductor of a coaxial cable 46.

[0019] The switch 11 can select one of the OBIRCH analysis device 21 , the power supply for optical emission analysis 22 , and the power supply for heat generation analysis 23 and connect it to the semiconductor sample 2 .

[0020] The switching control circuit 13A of the power supply switching device 10A receives a switching control signal from the system control device 24 via the coaxial cable 44, and controls the operation of the switch 11 based on this switching control signal to connect one of the OBIRCH analysis device 21, the light emission analysis power supply 22, and the heat generation analysis power supply 23 to the semiconductor sample 2 via the switch 11.

[0021] The device power supply 14A of the power supply switching device 10A receives power from the system control device 24 via a coaxial cable 45, and supplies the power to the switching control circuit 13A to operate the switching control circuit 13A.

[0022] The laser light irradiation device 31 is used when the OBIRCH analysis device 21 is selected by the switch 11 and connected to the semiconductor sample 2. The laser light irradiation device 31 irradiates and scans the semiconductor sample 2 with a laser beam. At points on the semiconductor sample 2 irradiated with the laser beam, the temperature rises and the resistance changes. The OBIRCH analysis device 21 applies a constant voltage or current to the semiconductor sample 2 and detects changes in the output electrical signal that accompany the scanning of the laser beam, thereby inspecting for defects.

[0023] The optical emission analysis camera 32 is used when the optical emission analysis power supply 22 is selected by the switch 11 and connected to the semiconductor sample 2. The optical emission analysis camera 32 is an observation device that observes the optical emission state of the semiconductor sample 2 when the optical emission analysis power supply 22 applies a constant voltage to the semiconductor sample 2. As the optical emission analysis camera 32, for example, a cooled CCD camera or SI (Si Intensified)-CCD camera that has sensitivity in the visible range, or an InGaAs camera that has sensitivity in the near-infrared range can be used.

[0024] The heat generation analysis camera 33 is used when the heat generation analysis power supply 23 is selected by the switch 11 and connected to the semiconductor sample 2. The heat generation analysis camera 33 is an observation device that observes the heat generation state of the semiconductor sample 2 in synchronization with the periodic change in voltage value when the heat generation analysis power supply 23 applies a voltage whose value changes periodically over time to the semiconductor sample 2. As the heat generation analysis camera 33, for example, a Thermo Dynamic camera having sensitivity in the mid-infrared range is used.

[0025] By using such an inspection system 1A, OBIRCH analysis, optical emission analysis, and heat generation analysis can be applied in sequence by switching the switch 11, and defective portions of a semiconductor sample can be efficiently inspected.

[0026] The inventors constructed an inspection system 1A as shown in Fig. 1 and attempted to inspect defects on a semiconductor sample, and found that significant noise appeared in the OBIRCH analysis results (images showing changes in the output electrical signal at each position irradiated by the laser beam) (this will be explained later with reference to Fig. 5). This significant noise does not appear when the OBIRCH analysis device 21 is connected directly to the semiconductor sample without using the power supply switching device 10A.

[0027] The inventors have also confirmed that when the ground potential is common between the devices in the inspection system 1A shown in Fig. 1, large noise that cannot be ignored, although it is somewhat reduced, appears. This large noise is thought to be caused by the configuration in which the power supply switching device 10A is used to switch between the OBIRCH analysis device 21, the optical emission analysis power supply 22, and the heat generation analysis power supply 23.

[0028] The configuration of the inspection system 1B of this embodiment, which will be described next with reference to Figures 2 to 4, is an improvement of the inspection system 1A based on the findings of the inventors described above, and is capable of inspecting defective areas of semiconductor samples using the OBIRCH analysis technique and other analysis techniques with high efficiency and low noise.

[0029] 2 is a diagram showing the configuration of an inspection system 1B according to this embodiment. Compared to the configuration of inspection system 1A (FIG. 1), inspection system 1B (FIG. 2) differs in that it includes a power supply switching device 10B instead of power supply switching device 10A. Power supply switching device 10B includes a first switch 11, a second switch 12, a switching control circuit 13B, an isolated power supply 14B, and an isolated signal transmission unit 15.

[0030] Like the switch 11 of the power supply switching device 10A, the first switch 11 of the power supply switching device 10B is connected to a first end of the OBIRCH analysis device 21 via the inner conductor of a coaxial cable 41, to a first end of the light emission analysis power supply 22 via the inner conductor of a coaxial cable 42, to a first end of the heat generation analysis power supply 23 via the inner conductor of a coaxial cable 43, and to the semiconductor sample 2 via the inner conductor of a coaxial cable 46.

[0031] The first switch 11 can select one of the first terminals of the OBIRCH analysis device 21 , the light emission analysis power supply 22 , and the heat generation analysis power supply 23 and connect it to the semiconductor sample 2 .

[0032] The second switch 12 of the power supply switching device 10B is connected to a second end of the OBIRCH analysis device 21 via the outer conductor of the coaxial cable 41, to a first end of the light emission analysis power supply 22 via the outer conductor of the coaxial cable 42, to a first end of the heat generation analysis power supply 23 via the outer conductor of the coaxial cable 43, and to the semiconductor sample 2 via the outer conductor of the coaxial cable 46.

[0033] The second switch 12 can select one of the second ends of the OBIRCH analysis device 21, the light emission analysis power supply 22, and the heat generation analysis power supply 23 and connect it to the semiconductor sample 2. The second ends of the OBIRCH analysis device 21, the light emission analysis power supply 22, and the heat generation analysis power supply 23 are connected to the ground potential of each device. The outer conductors of the coaxial cables 41 to 46 do not have to be connected to a common ground potential within the power supply switching device 10B.

[0034] The switching control circuit 13B of the power supply switching device 10B receives a switching control signal from the system control device 24 via the coaxial cable 44, the insulated signal transmission unit 15, and the coaxial cable 47, and controls the operation of the first switch 11 and the second switch 12 based on this switching control signal to connect any one of the OBIRCH analysis device 21, the optical emission analysis power supply 22, and the heat generation analysis power supply 23 to the semiconductor sample 2 via the first switch 11 and the second switch 12. The switching control circuit 13B simultaneously selects the first end by the first switch 11 and the second end by the second switch 12 for a common device.

[0035] The isolated power supply 14B of the power supply switching device 10B is provided on a path that supplies power from the system control device 24 to the switching control circuit 13B, and electrically isolates the system control device 24 from the switching control circuit 13B. The isolated power supply 14B receives power from the system control device 24 via a coaxial cable 45, and supplies the power to the switching control circuit 13B to operate the switching control circuit 13B.

[0036] The isolated signal transmission unit 15 of the power supply switching device 10B is provided on a signal path for transmitting a switching control signal from the system control device 24 to the switching control circuit 13B, and electrically insulates the system control device 24 from the switching control circuit 13B. The isolated signal transmission unit 15 receives the switching control signal from the system control device 24 via the coaxial cable 44, and transmits it to the switching control circuit 13B via the coaxial cable 47.

[0037] The laser light irradiation device 31 is used when the OBIRCH analysis device 21 is selected by the switches 11 and 12 and connected to the semiconductor sample 2. The optical emission analysis camera 32 is used when the optical emission analysis power supply 22 is selected by the switches 11 and 12 and connected to the semiconductor sample 2. The heat generation analysis camera 33 is used when the heat generation analysis power supply 23 is selected by the switches 11 and 12 and connected to the semiconductor sample 2.

[0038] In addition, in the inspection system 1B, it is preferable that the ground potentials of the power supply switching device 10B, the OBIRCH analysis device 21, the light emission analysis power supply 22, the heat generation analysis power supply 23, and the system control device 24 are strongly connected to each other so that the difference between them is as small as possible.

[0039] 3 is a diagram showing an example of the configuration of an isolated power supply 14B of a power supply switching device 10B. The isolated power supply 14B shown in this diagram includes a power transformer 140, a primary conversion circuit 141, and a secondary conversion circuit 142.

[0040] The primary-side conversion circuit 141 converts the DC voltage input from the system control device 24 via the coaxial cable 45 into an AC voltage and outputs the AC voltage to the primary coil of the power transformer 140. The secondary-side conversion circuit 142 converts the AC voltage induced in the secondary coil of the power transformer 140 into a DC voltage and outputs the DC voltage to the switching control circuit 13B.

[0041] The isolated power supply 14B having such a configuration can electrically insulate the system control device 24 and the switching control circuit 13B from each other in the power supply path. The isolated power supply 14B can also have other configurations.

[0042] 4 is a diagram showing an example of the configuration of the isolated signal transmission unit 15 of the power supply switching device 10B. The isolated signal transmission unit 15 shown in this diagram includes a coupled inductor 150, a modulation circuit 151, and a demodulation circuit 152. The modulation circuit 151 modulates the switching control signal received from the system control device 24 via the coaxial cable 44 and outputs the modulated signal to the primary coil of the coupled inductor 150. The demodulation circuit 152 demodulates the modulated signal induced in the secondary coil of the coupled inductor 150 to generate a switching control signal, and provides this switching control signal to the switching control circuit 13B.

[0043] The isolated signal transmission unit 15 having such a configuration can electrically insulate the system control device 24 and the switching control circuit 13B from each other in the transmission path of the switching control signal. The isolated signal transmission unit 15 can have other configurations, for example, a configuration in which the switching control signal is temporarily converted into an optical signal and then transmitted. More specifically, the isolated signal transmission unit 15 may be configured using a photocoupler or a configuration in which an optical waveguide such as an optical fiber is provided between a laser diode and a photodiode.

[0044] 5 and 6 are diagrams showing examples of images showing the results of OBIRCH analysis. These images show changes in the output electrical signal at each position of the laser beam irradiation on the semiconductor sample. FIG. 5 is an image showing the results of OBIRCH analysis when the inspection system 1A shown in FIG. 1 is used. FIG. 6 is an image showing the results of OBIRCH analysis when the inspection system 1B shown in FIG. 2 (however, the isolated signal transmission unit 15 is not provided) is used.

[0045] These two images show the OBIRCH analysis results for the same location on the same semiconductor sample. In each image, the black linear area extending from the lower left to the upper right within the area enclosed by the dashed ellipse indicates the wiring path through which current flows in the semiconductor sample.

[0046] In the OBIRCH analysis results shown in Figure 5, significant noise that cannot be ignored appears throughout the image, such as the black area near the upper left corner of the image, the black area below the dashed ellipse, and stripes extending horizontally across the entire image, and the signal indicating the wiring route within the area surrounded by the dashed ellipse is weak.

[0047] In contrast, in the OBIRCH analysis results shown in FIG. 6, the noise that appeared in the image of the OBIRCH analysis results shown in FIG. 5 is suppressed, and the signal indicating the wiring path within the area surrounded by the dashed ellipse is stronger.

[0048] In this way, in the inspection system 1B of this embodiment shown in FIG. 2, the power supply switching device 10B is equipped with the second switch 12 in addition to the first switch 11, and is also equipped with an insulated power supply 14B, so that inspection of defective portions of semiconductor samples can be performed with high efficiency and low noise using the OBIRCH analysis technique and other analysis techniques (emission analysis technique, heat generation analysis technique).

[0049] Furthermore, in the inspection system 1B of this embodiment shown in FIG. 2, the power supply switching device 10B further includes an isolated signal transmission unit 15, which enables inspection of defective portions of semiconductor samples using the OBIRCH analysis technique and other analysis techniques with even lower noise.

[0050] It is believed that this low-noise effect is achieved for the following reason: That is, during OBIRCH analysis, the signal path between the OBIRCH analysis device 21 and the semiconductor sample 2 is isolated from the ground potential of other devices. As a result, even if there is a fluctuation in the ground potential difference between the power supply switching device 10B, the OBIRCH analysis device 21, the light emission analysis power supply 22, the heat generation analysis power supply 23, and the system control device 24, it is believed that the fluctuation in the ground potential difference can be prevented from adversely affecting the OBIRCH analysis as noise.

[0051] The power supply switching device and the inspection system are not limited to the above-described embodiment and configuration example, and various modifications are possible.

[0052] For example, the power supply device selected by the power supply switching device 10B other than the OBIRCH analysis device 21 may be only one of the optical emission analysis power supply 22 and the heat generation analysis power supply 23, and in this case, it is sufficient to provide only one of the optical emission analysis camera 32 and the heat generation analysis camera 33. Furthermore, a power supply device for semiconductor sample inspection other than the optical emission analysis power supply 22 and the heat generation analysis power supply 23 may be connected to the power supply switching device 10B.

[0053] A first aspect of the power supply switching device according to the above embodiment is a device that selects one device from a plurality of devices including an OBIRCH analysis device and one or more power supply devices, and connects a first terminal and a second terminal of the selected device to a semiconductor sample, and includes: (1) a first switch that selects one of the first terminals of each of the plurality of devices and electrically connects it to the semiconductor sample; (2) a second switch that selects one of the second terminals of each of the plurality of devices and electrically connects it to the semiconductor sample; (3) a switching control circuit that simultaneously selects the first terminal by the first switch and the second terminal by the second switch for a common device; and (4) an isolated power supply that is provided on a path that supplies power from the outside to the switching control circuit and electrically isolates the outside from the switching control circuit.

[0054] The power supply switching device of the second aspect may be configured in the same manner as the first aspect, further comprising an isolated signal transmission unit that is provided on a signal path for providing switching control signals that control the operation of each of the first switch and the second switch from the outside to the switching control circuit, and that electrically isolates the outside from the switching control circuit.

[0055] The inspection system of the first aspect according to the above embodiment is a system for inspecting defective portions of a semiconductor sample, and includes: (1) a plurality of devices including an OBIRCH analysis device and one or more power supply devices; (2) a power supply switching device of the above configuration that selects one device from the plurality of devices and connects a first end and a second end of the selected device to the semiconductor sample; (3) a laser light irradiation device that irradiates and scans a laser beam onto the semiconductor sample when the OBIRCH analysis device is selected by the power supply switching device and connected to the semiconductor sample; and (4) an observation device that observes the semiconductor sample when the power supply device is selected by the power supply switching device and connected to the semiconductor sample.

[0056] In the inspection system of the second aspect, in the configuration of the first aspect, a power supply for optical emission analysis may be provided as a power supply device, and an optical emission analysis camera may be provided as an observation device for observing the optical emission status of the semiconductor sample when the optical emission analysis power supply is selected by the power supply switching device and connected to the semiconductor sample.

[0057] In the inspection system of the third aspect, in the configuration of the first or second aspect, a power supply for heat generation analysis may be provided as a power supply device, and a camera for heat generation analysis may be provided as an observation device to observe the heat generation status in the semiconductor sample when the power supply for heat generation analysis is selected by the power supply switching device and connected to the semiconductor sample.

[0058] In the inspection system of the fourth aspect, in the configuration of any one of the first to third aspects, the inspection system may further include a system control device that provides a switching control signal to the switching control circuit to control the operation of each of the first switch and the second switch, and supplies power to the switching control circuit via an isolated power supply.

[0059] In the inspection system of the fifth aspect, in the configuration of any one of the first to fourth aspects, the ground potentials of the plurality of devices may be connected by a common ground line.

[0060] The embodiments can be used as an inspection system that can inspect semiconductor samples for defects using the OBIRCH analysis technique and other analysis techniques with high efficiency and low noise, and as a power supply switching device used in such an inspection system.

[0061] 1A, 1B... Inspection system, 2... Semiconductor sample, 10A, 10B... Power supply switching device, 11... First switch, 12... Second switch, 13A, 13B... Switching control circuit, 14A... Device power supply, 14B... Insulated power supply, 15... Insulated signal transmission unit, 21... OBIRCH analysis device, 22... Power supply for optical emission analysis, 23... Power supply for heat generation analysis, 24... System control device, 31... Laser light irradiation device, 32... Optical emission analysis camera, 33... Heat generation analysis camera, 41 to 47... Coaxial cables.

Claims

1. A power supply switching device that selects one of a plurality of devices including an OBIRCH analysis device and one or more power supply devices, and connects a first terminal and a second terminal of the selected device to a semiconductor sample, comprising: a first switch that selects one of the first terminals of each of the plurality of devices and electrically connects it to the semiconductor sample; a second switch that selects one of the second terminals of each of the plurality of devices and electrically connects it to the semiconductor sample; a switching control circuit that simultaneously selects the first terminal by the first switch and the second terminal by the second switch for a common device; and an isolated power supply that is provided on a path that supplies power from the outside to the switching control circuit, and electrically isolates the outside from the switching control circuit.

2. The power supply switching device according to claim 1, further comprising an isolated signal transmission section that is provided on a signal path for supplying switching control signals that control the operation of each of the first switch and the second switch from the outside to the switching control circuit, and that electrically isolates the outside from the switching control circuit.

3. A system for inspecting defective portions of semiconductor samples, comprising: a plurality of devices including an OBIRCH analysis device and one or more power supply devices; a power supply switching device according to claim 1 or 2 that selects one device from the plurality of devices and connects a first terminal and a second terminal of the selected device to the semiconductor sample; a laser light irradiation device that irradiates and scans the semiconductor sample with a laser beam when the OBIRCH analysis device is selected by the power supply switching device and connected to the semiconductor sample; and an observation device that observes the semiconductor sample when the power supply device is selected by the power supply switching device and connected to the semiconductor sample.

4. An inspection system as described in claim 3, comprising a power supply for optical emission analysis as the power supply device, and an optical emission analysis camera as the observation device, which observes the optical emission status of the semiconductor sample when the optical emission analysis power supply is selected by the power supply switching device and connected to the semiconductor sample.

5. An inspection system as described in claim 3 or 4, comprising a power supply for heat generation analysis as the power supply device, and a camera for heat generation analysis as the observation device, which observes the heat generation status of the semiconductor sample when the power supply for heat generation analysis is selected by the power supply switching device and connected to the semiconductor sample.

6. The inspection system according to any one of claims 3 to 5, further comprising a system control device that provides the switching control circuit with a switching control signal that controls the operation of each of the first switch and the second switch, and that supplies power to the switching control circuit via the isolated power supply.

7. An inspection system according to any one of claims 3 to 6, wherein the ground potentials of the plurality of devices are connected by a common ground line.

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