Manufacturing method for glass substrate for semiconductors, and glass substrate for semiconductors

Abstract

Disclosed are a manufacturing method for a glass substrate for semiconductors, and a glass substrate for semiconductors. The disclosed manufacturing method for a multilayer glass substrate for semiconductors comprises: a preparation step for preparing a glass core; an etching step for forming a trench in the glass core in the thickness direction; a paste filling step for filling the trench with a conductive paste comprising conductive particles; and a firing step for forming an electrode by applying heat to the conductive paste filled in the trench, wherein, in the firing step, firing is performed at a temperature lower than the softening point of the glass core.

Description

Manufacturing method of glass substrate for semiconductor and glass substrate for semiconductor

[0001] The present invention relates to a method for manufacturing a glass substrate, and more particularly, to a method for manufacturing a glass substrate for semiconductors and a glass substrate for semiconductors.

[0002] In the manufacturing of electronic components, implementing circuits on semiconductor wafers is called the Front-End (FE) process. Assembling the wafers into a usable state for actual products is called the Back-End (BE) process. This Back-End (BE) process includes the packaging (Multi-Chip Package) process, which assembles multiple semiconductors produced in wafer form into a bundle suitable for device integration.

[0003] Semiconductor technology is advancing in diverse forms, including sub-micron nanometer line widths, cell counts exceeding 10 million, high-speed operation, and high heat dissipation. However, the technology to perfectly package these devices remains relatively lacking. Consequently, the electrical performance of semiconductors is often determined more by packaging technology and the resulting electrical connections than by the semiconductor technology itself.

[0004] Ceramic or resin is typically used as the packaging substrate material. However, ceramic substrates have high resistance and dielectric constants, making it difficult to mount high-performance, high-frequency semiconductor devices on them. Resin substrates, while relatively easy to mount high-performance, high-frequency semiconductor devices on, have limitations in reducing wiring pitch, and their uneven surface makes them particularly unsuitable for use in high-performance semiconductor packaging, which is undergoing continuous miniaturization.

[0005] A method using smooth-surfaced silicon as an alternative packaging substrate has been developed, but this method has the disadvantages of being expensive and difficult to manufacture on a large scale. In particular, silicon packaging substrates have a high coefficient of thermal expansion (CTE), making them unsuitable for use in die packaging applications with high-density micro-sized bumps, such as those used in high-bandwidth memory (HBM).

[0006] Glass substrates are recently gaining attention as a potential replacement for silicon substrates. Glass substrates are more cost-effective than silicon substrates and can be designed and manufactured on larger surfaces, enabling the production of a greater number of chips. Furthermore, the extremely smooth and flat surface of glass allows for precise circuit design, making them advantageous for implementing high-performance, high-density circuits.

[0007] However, in forming electrical wiring (or electrodes) on a glass substrate using a conductive metal that functions as an electrical connection medium, there are ongoing issues with adhesion reliability and yield, such as the conductive metal's poor adhesion due to the surface characteristics of the glass substrate, which causes it to easily peel off from the glass substrate. In addition, there is a problem of increased process costs because an electrode formation process such as sputtering or vacuum deposition is involved.

[0008] The matters described in the background art above are intended to help understand the background of the invention and may include matters that are not publicly disclosed prior art.

[0009] The technical problem to be solved by the present invention is to provide a method for manufacturing a semiconductor glass substrate and a semiconductor glass substrate capable of improving the adhesion of conductive particles to the glass substrate and thereby improving the electrode peel-off problem.

[0010] Another technical problem to be solved by the present invention is to provide a method for manufacturing a semiconductor glass substrate and a semiconductor glass substrate that can simplify the process for forming an electrode on a glass substrate and reduce the process cost.

[0011] According to one aspect of the present invention as a means for solving a problem, a method for manufacturing a semiconductor glass substrate is provided, including a preparation step of preparing a glass core, an etching step of forming a trench in the thickness direction of the glass core, a paste filling step of filling the trench with a conductive paste containing conductive particles, and a firing step of applying heat to the conductive paste filled in the trench to form an electrode, wherein in the firing step, the electrode is formed by firing at a temperature lower than the softening point of the glass core.

[0012] In a method for manufacturing a glass substrate for semiconductors according to one aspect of the present invention, the conductive particles may be silver (Ag).

[0013] In a method for manufacturing a semiconductor glass substrate according to one aspect of the present invention, the conductive paste includes 70 to 90 wt% of silver (Ag) powder, 5 to 10 wt% of a binder, 4 to 15 wt% of an organic solvent, and 1 to 5 wt% of an additive, wherein the organic solvent is any one selected from the group consisting of butyl acetate, terpineol, turpentine oil, butyl carbitol, and isopropyl alcohol, or a combination thereof, the binder is an acrylic binder or a nitrocellulose binder, and the additive may be any one selected from the group consisting of glycerin, polyethylene glycol (PEG), and glass powder, or a combination thereof.

[0014] In a method for manufacturing a semiconductor glass substrate according to one aspect of the present invention, the glass core may be an oxide-reinforced glass having a thickness of 20 to 30 μm and having high strength, corrosion resistance, transparency, and hardness at room temperature.

[0015] In a method for manufacturing a semiconductor glass substrate according to one aspect of the present invention, the glass core may be borosilicate glass or aluminosilicate glass.

[0016] In the paste filling step of the method for manufacturing a semiconductor glass substrate according to one aspect of the present invention, a screen mask having an open pattern corresponding to the trench is placed on the upper surface of the glass core, and a conductive paste is applied on the screen mask, and then a squeegee moving from one side to the other is used to pass the conductive paste through the open pattern portion of the screen mask, thereby filling the trench with the conductive paste.

[0017] According to another aspect of the present invention as a means for solving the problem, a semiconductor glass substrate is provided, which comprises a glass core, a trench formed in the thickness direction of the glass core, and an electrode formed in the trench so as to have a surface aligned on the same plane as the surface of the glass core, wherein the electrode is formed by filling the trench with a conductive paste containing conductive particles and firing the trench at a temperature lower than the softening point of the glass core.

[0018] In another aspect of the present invention, the conductive particles in the semiconductor glass substrate may be silver (Ag).

[0019] In another aspect of the present invention, in a semiconductor glass substrate, the conductive paste comprises 70 to 90 wt% of silver (Ag) powder, 5 to 10 wt% of a binder, 4 to 15 wt% of an organic solvent, and 1 to 5 wt% of an additive, wherein the organic solvent is any one selected from the group consisting of butyl acetate, terpineol, turpentine, butyl carbitol, and isopropyl alcohol, or a combination thereof, the binder is an acrylic binder or a nitrocellulose binder, and the additive may be any one selected from the group consisting of glycerin, polyethylene glycol (PEG), and glass powder, or a combination thereof.

[0020] In a semiconductor glass substrate according to another aspect of the present invention, the glass core may be an oxide-reinforced glass having a thickness of 20 to 30 μm and having high strength, corrosion resistance, transparency, and hardness at room temperature.

[0021] In a semiconductor glass substrate according to another aspect of the present invention, the glass core may be borosilicate glass or aluminosilicate glass.

[0022] According to the present invention, by filling a trench (a groove or hole where an electrode will be formed) with conductive paste and then firing it to form an electrode on a glass substrate, a high-density electrode in which conductive particles are strongly fused to each other can be formed, and the adhesive strength of the electrode can be greatly increased by forming a strong bond between the conductive particles and the wall surface of the trench due to the heat applied during the firing process.

[0023] In addition, since the electrode is formed in a structure in which at least three sides are in contact with the glass substrate, the adhesive strength of the electrode is further increased, which has the effect of clearly improving electrode peel off that occurs in conventional glass substrates, and accordingly, a highly reliable glass substrate having uniform and strong electrode bonding can be provided.

[0024] In addition, since the process of filling a trench (a groove or hole where an electrode will be formed) with conductive paste and then firing it to form an electrode on a glass substrate requires no processes such as sputtering or vacuum deposition, and if silver is used as the electrode material (the main base material of the conductive paste), firing in an air atmosphere is possible, which can shorten the process and reduce process costs.

[0025] FIG. 1 is a flowchart illustrating a method for manufacturing a semiconductor glass substrate according to an embodiment of the present invention.

[0026] FIG. 2 is a process schematic diagram schematically illustrating a manufacturing process of a semiconductor glass substrate according to an embodiment of the present invention.

[0027] FIG. 3 is a drawing schematically illustrating a conductive paste filling step in a method for manufacturing a semiconductor glass substrate according to an embodiment of the present invention.

[0028] FIG. 4 is a cross-sectional configuration diagram of a semiconductor glass substrate manufactured by a method for manufacturing a semiconductor glass substrate according to an embodiment of the present invention.

[0029] FIG. 5 is an enlarged view of the main part of the semiconductor glass substrate illustrated in FIG. 4, and is an enlarged view of the main part of the present invention, which is an enlarged view of part 'A' of FIG. 3.

[0030] FIG. 6 is a cross-sectional diagram showing another preferred embodiment of a semiconductor glass substrate according to an embodiment of the present invention.

[0031] Hereinafter, preferred embodiments of the present invention will be described in detail.

[0032] In describing embodiments of the present invention, identical or similar components will be assigned the same reference numbers, and redundant descriptions thereof will be omitted. Furthermore, if a detailed description of a related known technology is deemed to obscure the gist of the embodiments disclosed herein, such detailed description will be omitted.

[0033] In addition, the attached drawings are only intended to facilitate easy understanding of the embodiments disclosed in this specification, and the technical ideas disclosed in this specification are not limited by the attached drawings, and it is to be understood that all modifications, equivalents, or substitutes included in the spirit and technical scope of the present invention are included.

[0034] Additionally, when a component is referred to as being "connected" or "connected" to another component, it should be understood that it may be directly connected or connected to that other component, but that there may also be other components in between.

[0035] On the other hand, when it is said that a component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between.

[0036] In addition, it should be understood that terms such as “include,” “have,” and “have” used in describing embodiments of the present invention are intended to specify the presence of a feature, number, step, operation, component, part, or combination thereof of the invention, and do not preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0037] The drawings are intended solely to facilitate understanding of the invention and should not be construed as limiting the scope of the invention. Furthermore, it should be noted that relative thicknesses, lengths, and sizes in the drawings may be exaggerated for convenience and clarity of explanation.

[0038] FIG. 1 is a flowchart for explaining a method for manufacturing a semiconductor glass substrate according to an embodiment of the present invention, and FIG. 2 is a process schematic diagram schematically illustrating a process for manufacturing a semiconductor glass substrate according to an embodiment of the present invention.

[0039] Referring to FIGS. 1 and 2, a method for manufacturing a semiconductor glass substrate according to an embodiment includes a preparation step (S100) of preparing a glass core (10), an etching step (S200) of forming a trench (20) in the thickness direction in the glass core (10), a paste filling step (S300) of filling the trench (20) with a conductive paste (32) containing conductive particles, and a firing step (S400) of applying heat to the conductive paste (32) filled in the trench (20) to form an electrode.

[0040] In the method for manufacturing a semiconductor glass substrate according to an embodiment, the glass core (10) that is the main substrate, i.e., the glass core (10) prepared in the preparation step (S100), may be an oxide-tempered glass. In the method for manufacturing a semiconductor glass substrate according to an embodiment, the glass core (10) that is the main substrate, may be a tempered glass whose main component is an oxide, that has a thickness of 20 to 30 ㎛, high strength and corrosion resistance at room temperature, and transparency and hardness.

[0041] As a preferred example, the glass core (10) that is the main material in the method for manufacturing a semiconductor glass substrate according to the embodiment may be borosilicate glass that is a glass that mainly contains boric acid instead of silicic acid, contains at least 5% of boric acid, has chemical acid resistance and weather resistance due to a low coefficient of expansion, and has excellent thermal shock resistance.

[0042] As another preferred example, the glass core (10) that is a main material in the method for manufacturing a semiconductor glass substrate according to the embodiment may be an aluminosilicate glass that is made of alumina and boron oxide and has similar properties to borosilicate glass, but has superior heat resistance and high chemical resistance compared to borosilicate glass.

[0043] In the etching step (S200), a process of forming a trench (20) in the thickness direction in the glass core (10) through etching can be performed. In the etching step (S200), a predetermined pattern is formed on the glass core (10) using a photosensitive agent through a known photolithography process for drawing a semiconductor circuit on a wafer, and an etching process is performed using the photosensitive agent with the pattern formed thereon as a mask, thereby forming the trench (20).

[0044] For reference, the term 'trench (20)' used in describing the present invention means a fine hole (Via) or groove formed in the thickness direction in the glass core (10) through an etching process.

[0045] In the etching step (S200), a trench (20) can be formed in the glass core (10) through dry etching using plasma or laser or wet etching using an etchant. In the case of wet etching, HF or NaOH can be used as the etchant. HF has the advantage of being able to etch at room temperature and having a fast etching speed, and NaOH has the advantage of being able to etch precisely, although its etching conditions are more demanding than those of HF.

[0046] Depending on the embodiment, a LIDE (Laser induced Deep Etching) method may be applied, which performs pre-processing with a laser and then completes the trench (20) through post-processing using chemical etching. For reference, the LIDE method is a technology that induces a selective chemical phase change in glass using a laser and then selectively etches only the area deformed by the laser through a chemical etching process to form a trench (20).

[0047] Among the trenches (20, microscopic holes and grooves) formed in the glass core (10) in the etching step (S200), the groove (20a) can be formed with a specific depth and width. Considering that the thickness of the glass core (10) is 20 to 30 ㎛, the depth (d) of the groove (20a) among the trenches (microscopic holes and grooves) formed in the glass core (10) in the etching step (S200) is preferably 0.8 to 1.2 ㎛, and its width (groove width, w) is preferably 1.8 to 2.2 ㎛.

[0048] The paste filling step (S300) is a step of filling a trench (20) with a conductive paste (32) that will form an electrode. In the paste filling step (S300), a process of filling the trench (20) formed in the glass core (10) through the etching step (S200) described above with a conductive paste (32) containing conductive particles can be performed.

[0049] In the paste filling step (S300), preferably, a screen mask (M) having an open pattern (P) corresponding to a trench (20) as shown in FIG. 3 is placed on the upper surface of the glass core (10), and a conductive paste (32) is applied on the screen mask (M), and then a squeegee (S) moving from one side to the other (see the arrow direction) is used to pass the conductive paste through the open pattern (P) portion of the screen mask (M), thereby accurately filling the conductive paste (32) only in the trench (20) portion.

[0050] In an embodiment, the conductive particles, which are the main material constituting the conductive paste (32), may be silver (Ag). Silver (Ag) has an electrical conductivity of about 63.01X10 6 It is the highest among all metals in terms of S / m (Siemens / meter), and especially when silver (Ag) is used as the main base material of the conductive paste (32), sintering treatment in an air atmosphere is possible in the subsequent sintering step (S400), which can reduce the process and process costs. This is due to the characteristic of silver being less sensitive to oxidation compared to other metals.

[0051] In an embodiment, the conductive paste (32) may include silver powder, a binder that helps to bind the silver powder to each other and adhere to a substrate, an organic solvent for uniform dispersion of the silver powder, and an additive for controlling sintering temperature, paste viscosity, and oxidation prevention. In an embodiment, a preferred composition of the conductive paste (32) may be 70 to 90 wt% of silver powder, 5 to 10 wt% of binder, 4 to 15 wt% of organic solvent, and 1 to 5 wt% of additive.

[0052] In an embodiment, the organic solvent may be one selected from the group consisting of butyl acetate, terpineol, turpentine, butyl carbitol, and isopropyl alcohol, or a combination thereof. The binder may be an acrylic binder or a nitrocellulose binder. And the additive may be one selected from the group consisting of glycerin, polyethylene glycol (PEG), and glass powder, or a combination thereof.

[0053] The firing step (S400) is a step of forming a solidified electrode by applying heat to the conductive paste (32) filled in the trench (20) to remove organic solvents, binders, additives, etc. In the firing step (S400), the electrode can be formed by firing at a temperature lower than the softening point of the glass core (10). When borosilicate tempered glass having a softening point of approximately 820°C is used as the glass core (10), the firing temperature is preferably 450°C or higher and 600°C or lower.

[0054] As mentioned, silver (Ag) is less susceptible to oxidation than other conductive metals. Therefore, it can be sintered in air. However, at temperatures above 700°C, the surface of silver (Ag) can oxidize. Therefore, it is recommended to use the lowest possible temperature during sintering to prevent oxidation. However, at temperatures below 400°C, sintering reduces adhesion between silver particles and may leave residual organic solvents or binders. Therefore, a sintering temperature of around 450 to 600°C is recommended.

[0055] A drying process (not shown) may be added to the firing step (S400). By performing an additional drying process after the firing process, the organic solvent remaining within the conductive paste (32) can be more reliably removed. It is preferable to perform the drying process at a temperature and time that allows the organic solvent to be vaporized and removed while also allowing the temperature of the electrode to be gradually cooled.

[0056] According to the manufacturing method according to an embodiment of the present invention, by filling a trench (a groove or hole where an electrode will be formed) with conductive paste and then firing it to form an electrode on a glass substrate, a high-density electrode in which conductive particles are strongly fused to each other can be formed, and the adhesive strength of the electrode can be greatly increased by forming a strong bond between the conductive particles and the wall surface of the trench due to the heat applied during the firing process.

[0057] In addition, since the electrode is formed in a structure in which at least three sides are in contact with the glass substrate, the adhesive strength of the electrode is further increased, which has the effect of clearly improving electrode peel off that occurs in conventional glass substrates, and accordingly, a highly reliable semiconductor glass substrate having uniform and strong electrode bonding can be provided.

[0058] In addition, since the process of filling a trench (a groove or hole where an electrode will be formed) with conductive paste and then firing it to form an electrode on a glass substrate requires no processes such as sputtering or vacuum deposition, and if silver is used as the electrode material (the main base material of the conductive paste), firing in an air atmosphere is possible, which can shorten the process and reduce process costs.

[0059] FIG. 4 is a cross-sectional view of a semiconductor glass substrate manufactured by the aforementioned method for manufacturing a semiconductor glass substrate, and FIG. 5 is an enlarged view of the main part of the present invention, which enlarges the 'A' portion of FIG. 4.

[0060] Referring to FIGS. 4 and 5, a semiconductor glass substrate (1) includes a glass core (10). A trench (20) is formed in the glass core (10), and an electrode (30) may be formed in the trench (20). The trench (20) may be a groove (20a) or a microscopic hole formed in the thickness direction of the glass core (10), and the electrode (30) may be formed in the trench (20) by conductive particles so as to have a surface aligned on the same plane as the surface of the glass core (10).

[0061] The glass core (10) may be a tempered glass having a thickness of 20 to 30 ㎛ and a first surface (12, upper surface in the drawing) that is even and a second surface (14, lower surface in the drawing) that is parallel to the first surface, and the trench (20) may be formed by forming a predetermined pattern on the glass core (10) with a photosensitive agent through a photolithography process and performing an etching process using the photosensitive agent with the pattern formed thereon as a mask.

[0062] For reference, the drawing (Fig. 4) illustrates an example of a configuration in which a groove-shaped trench (20a) is formed on the first side (12) of the glass core (10), but is not limited thereto. Depending on the embodiment, a groove-shaped trench (20a) may be formed on the second side (14) of the glass core (10), or a groove-shaped trench (20a) may be formed on both the first side (12) and the second side (14).

[0063] The glass core (10) may be tempered glass having a thickness of 20 to 30 μm. In an embodiment, the glass core (10) may be tempered glass whose main component is oxide, having high strength, corrosion resistance, transparency, and hardness at room temperature. As a preferred example, the glass core (10) may be borosilicate tempered glass. Depending on the embodiment, it may also be aluminosilicate tempered glass.

[0064] Borosilicate tempered glass is a glass that uses boric acid as its main ingredient instead of silica, and contains at least 5% boric acid. It has a low coefficient of expansion, chemical resistance to acid and weather resistance, and excellent thermal shock resistance, making it suitable for semiconductor glass substrates. Aluminum silicate tempered glass is made of alumina and boron oxide, and has similar properties to borosilicate glass, but has superior heat resistance and high chemical resistance compared to borosilicate glass, making it suitable for semiconductor glass substrates.

[0065] Among the trenches (fine holes and grooves) formed in the glass core (10), the groove (20a) can be formed with a specific depth and width. Considering that the thickness of the glass core (10) is 20 to 30 ㎛, the depth (d) of the groove (20a) among the trenches (fine holes and grooves) formed in the glass core (10) is preferably 0.8 to 1.2 ㎛, and its width (groove width, w) is preferably 1.8 to 2.2 ㎛.

[0066] The electrode (30) can be formed from a conductive paste (32, see FIG. 2) filled in the trench (20). The electrode (30) can be formed by filling the trench (20) with the conductive paste (32) and firing at a temperature lower than the softening point of the glass core (10). For example, when borosilicate tempered glass having a softening point of approximately 820°C is used as the glass core (10), the firing temperature can be 450°C or higher and 600°C or lower.

[0067] The conductive paste (32) includes conductive particles. In an embodiment, the conductive particles may be silver (Ag). Silver (Ag) has an electrical conductivity of about 63.01X10 6 It has the highest S / m (Siemens / meter) among all metals, and especially when silver (Ag) is used as the main base material of conductive paste (32), it can be fired in an air atmosphere, thereby reducing the process and process costs. This is due to the characteristic of silver being less sensitive to oxidation compared to other metals.

[0068] In an embodiment, the conductive paste (32) may include silver powder as a main material, a binder that helps to bind the silver powder to each other and adhere to the substrate, an organic solvent for uniform dispersion of the silver powder, and an additive for controlling the sintering temperature, viscosity of the paste (32), and preventing oxidation. In an embodiment, a preferred composition of the conductive paste (32) may be 70 to 90 wt% of silver powder, 5 to 10 wt% of binder, 4 to 15 wt% of organic solvent, and 1 to 5 wt% of additive.

[0069] In an embodiment, the organic solvent may be one selected from the group consisting of butyl acetate, terpineol, turpentine, butyl carbitol, and isopropyl alcohol, or a combination thereof. The binder may be an acrylic binder or a nitrocellulose binder, and the additive may be one selected from the group consisting of glycerin, polyethylene glycol (PEG), and glass powder, or a combination thereof.

[0070] As mentioned, silver (Ag) is less susceptible to oxidation than other conductive metals. Therefore, sintering is possible in air. However, because the surface of silver (Ag) can oxidize at high temperatures, it is desirable to use the lowest possible temperature during sintering to prevent oxidation. However, if the heating temperature is insufficient, the fusion between silver particles will deteriorate and organic solvents or binders may remain. Therefore, the sintering temperature is preferably 450°C or higher and 600°C or lower.

[0071] Semiconductor glass substrates with this configuration have electrodes formed in a trench electrode configuration where at least three sides are bonded to the glass substrate. This significantly enhances the adhesion of the electrodes to the glass substrate, thereby significantly improving problems of prior art, such as electrode peel-off. Consequently, a highly reliable product with robust and uniform electrode adhesion quality can be provided.

[0072] Figure 6 is a cross-sectional configuration diagram of a semiconductor glass substrate according to another preferred embodiment of the present invention.

[0073] Referring to FIG. 6, the semiconductor glass substrate (1') may further include a bonding metal layer (25) between the surface defining the trench (20) and the electrode (30). The bonding metal layer (25) may mediate a strong bond between the surface defining the trench (20) and the electrode (30). The bonding metal layer (25) may be a metal that can form a strong bond with glass and has good compatibility with conductive particles constituting the electrode, preferably silver (Ag).

[0074] The bonding metal layer (25) may preferably be one selected from the group consisting of one or a combination of molybdenum (Mo), titanium (Ti), titanium-tungsten alloy (TiW alloy), chromium (Cr), and nickel-chromium alloy (NiCr alloy), and the bonding metal layer (25) may be formed as a single layer structure with a thickness (t1) of about 50 nm on the surface defining the trench (20) through sputtering, which sprays the mentioned metal particles onto the glass surface with strong pressure and deposits them.

[0075] In another embodiment, the bonding metal layer (25) may be formed by, for example, forming a cover layer (not shown) on the glass core (10) in which a pattern hole is formed in a shape corresponding to the trench (20), spraying metal particles at high pressure toward the cover layer to deposit and form a bonding metal layer inside the trench (20) exposed through the pattern hole, and then removing the cover layer on the glass core by dry ashing or the like.

[0076] According to another embodiment, a semiconductor glass substrate can be manufactured through a series of processes, including forming a bonding metal layer by sputtering in a trench (a groove or microscopic hole) of a glass core, filling it with a conductive paste, and then firing. In such a glass substrate, the bonding metal layer and the conductive paste react with each other during the firing process to form a eutectic bonding layer, thereby further enhancing the adhesion of the electrode.

[0077] The above description is merely an example of the technical idea of ​​the present invention, and those skilled in the art will appreciate that various modifications and variations can be made without departing from the essential characteristics of the present invention.

[0078] Accordingly, the embodiments disclosed in the present invention are intended to illustrate, rather than limit, the technical concept of the present invention, and the scope of the technical concept of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical concepts within the scope equivalent thereto should be construed as being included within the scope of the present invention.

Claims

1. Preparatory step for preparing the glass core; An etching step for forming a trench in the thickness direction in the above glass core; A paste filling step of filling the trench with a conductive paste containing conductive particles; and A firing step of forming an electrode by applying heat to a conductive paste filled in a trench; A method for manufacturing a glass substrate for semiconductors, wherein in the above-mentioned firing step, an electrode is formed by firing at a temperature lower than the softening point of the glass core.

2. In paragraph 1, A method for manufacturing an organic plate for semiconductors, wherein the conductive particles are silver (Ag).

3. In paragraph 1, The above conductive paste, 70 to 90 wt% silver (Ag) powder, 5 to 10 wt% binder, 4 to 15 wt% of organic solvent, Contains 1 to 5 wt% of additives, The above organic solvent is one selected from the group consisting of butyl acetate, terpineol, turpentine, butyl carbitol, isopropyl alcohol, or a combination thereof, The above binder is an acrylic binder or a nitrocellulose binder, A method for manufacturing a glass substrate for semiconductors, wherein the additive is one selected from the group consisting of glycerin, polyethylene glycol (PEG), glass powder, or a combination thereof.

4. In paragraph 1, In the above preparation step, the glass core, A method for manufacturing a semiconductor glass substrate, which is an oxide-reinforced glass having a thickness of 20 to 30㎛ and high strength, corrosion resistance, transparency, and hardness at room temperature.

5. In paragraph 4, A method for manufacturing a glass substrate for semiconductors, wherein the above glass core is borosilicate glass or aluminosilicate glass.

6. In paragraph 1, In the above paste filling step, A method for manufacturing a semiconductor glass substrate, comprising: placing a screen mask having an open pattern corresponding to the trench on the upper surface of a glass core; applying conductive paste on the screen mask; and then passing the conductive paste through the open pattern portion of the screen mask using a squeegee that moves from one side to the other, thereby filling the trench with the conductive paste.

7. Glass core; A trench formed in the thickness direction of the glass core; and An electrode formed in the trench so as to have a surface aligned on the same plane as the surface of the glass core; A semiconductor glass substrate, wherein the electrode is formed by filling a conductive paste containing conductive particles into the trench and firing the paste at a temperature lower than the softening point of the glass core.

8. In paragraph 7, The above conductive particles are silver (Ag), and the organic plate for semiconductors.

9. In paragraph 7, The above conductive paste, 70 to 90 wt% silver (Ag) powder, 5 to 10 wt% binder, 4 to 15 wt% of organic solvent, Contains 1 to 5 wt% of additives, The above organic solvent is one selected from the group consisting of butyl acetate, terpineol, turpentine, butyl carbitol, isopropyl alcohol, or a combination thereof, The above binder is an acrylic binder or a nitrocellulose binder, A glass substrate for semiconductors, wherein the additive is one selected from the group consisting of glycerin, polyethylene glycol (PEG), glass powder, or a combination thereof.

10. In paragraph 7, The above glass core, A semiconductor glass substrate made of oxide-reinforced glass with a thickness of 20 to 30 μm and high strength, corrosion resistance, transparency, and hardness at room temperature.

11. In paragraph 10, The above glass core is a semiconductor glass substrate made of borosilicate glass or aluminosilicate glass.

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