Method for manufacturing multilayer glass substrate for semiconductor and multilayer glass substrate for semiconductor

Abstract

A method for manufacturing a multilayer glass substrate for a semiconductor of the present invention comprises: a preparation step of preparing a glass core in which a trench is formed in a thickness direction; a brazing adhesive layer forming step of forming a brazing adhesive layer on a surface defining the trench; a preliminary electrode forming step of forming a preliminary electrode in the trench on which the brazing adhesive layer is formed by using a conductive paste; a glass bonding layer forming step of forming a glass bonding layer by printing a glass bonding material on the surface of the glass core excluding a partial region; a substrate stacking step of disposing another glass core on the glass bonding layer; and a sintering step of performing heat treatment at a specific temperature to perform brazing bonding between the surface defining the trench and the preliminary electrode, main curing of the preliminary electrode, and sealing bonding between the two stacked glass cores.

Description

Method for manufacturing a multilayer glass substrate for semiconductors and a multilayer glass substrate for semiconductors

[0001] The present invention relates to a method for manufacturing a glass substrate, and more particularly, to a method for manufacturing a multilayer glass substrate for semiconductors in which two or more glass substrates are laminated and bonded, and a multilayer glass substrate for semiconductors.

[0002] In the manufacturing of electronic components, implementing circuits on semiconductor wafers is called the Front-End (FE) process. Assembling the wafers into a usable state for actual products is called the Back-End (BE) process. This Back-End (BE) process includes the packaging (Multi-Chip Package) process, which assembles multiple semiconductors produced in wafer form into a bundle suitable for device integration.

[0003] Semiconductor technology is advancing in diverse forms, including sub-micron nanometer line widths, cell counts exceeding 10 million, high-speed operation, and high heat dissipation. However, the technology to perfectly package these devices remains relatively lacking. Consequently, the electrical performance of semiconductors is often determined more by packaging technology and the resulting electrical connections than by the semiconductor technology itself.

[0004] Ceramic or resin is typically used as the packaging substrate material. However, ceramic substrates have high resistance and dielectric constants, making it difficult to mount high-performance, high-frequency semiconductor devices on them. Resin substrates, while relatively easy to mount high-performance, high-frequency semiconductor devices on, have limitations in reducing wiring pitch, and their uneven surface makes them particularly unsuitable for use in high-performance semiconductor packaging, which is undergoing continuous miniaturization.

[0005] A method using smooth-surfaced silicon as an alternative packaging substrate has been developed, but this method has the disadvantages of being expensive and difficult to manufacture on a large scale. In particular, silicon packaging substrates have a high coefficient of thermal expansion (CTE), making them unsuitable for use in die packaging applications with high-density micro-sized bumps, such as those used in high-bandwidth memory (HBM).

[0006] Glass substrates are recently gaining attention as a potential replacement for silicon substrates. Glass substrates are more cost-effective than silicon substrates and can be designed and manufactured on larger surfaces, enabling the production of a greater number of chips. Furthermore, the extremely smooth and flat surface of glass allows for precise circuit design, making them advantageous for implementing high-performance, high-density circuits.

[0007] However, in forming electrodes (or electrical wiring) on ​​a glass substrate with a conductive paste that functions as an electrical connection medium, the adhesion to the conductive paste is poor due to the smooth surface of the glass substrate, and the electrical wiring that is solidified after sintering is easily peeled off from the glass substrate, so problems with adhesion reliability and yield are continuously being raised.

[0008] Moreover, when manufacturing in the form of a multilayer glass substrate advantageous for packaging, there is a problem that the printing and sintering must be repeated several times, such as printing a conductive paste on a glass substrate, sintering it to form electrical wiring on the glass substrate, printing a bonding material on the organic substrate on which the electrical wiring has been formed, and then sintering it once more to bond the glass substrate, making the process complex and increasing the process cost as the process becomes more complex.

[0009] In particular, in the case of glass substrates, due to the material properties, there is a disadvantage that interlayer bonding is not easy when manufacturing in the form of a multilayer glass substrate in which two or more are laminated, and when a general bonding material is used for interlayer bonding of glass substrates, interlayer separation occurs due to the difference in coefficient of thermal expansion between the bonding material and the glass, causing problems with bonding reliability.

[0010] The matters described in the background art above are intended to help understand the background of the invention and may include matters that are not publicly disclosed prior art.

[0011] The technical problem to be solved by the present invention is to provide a method for manufacturing a multilayer glass substrate for semiconductors and a multilayer glass substrate for semiconductors, which can improve the adhesion of electrodes (or electrical wiring) to a glass substrate and thereby improve the electrode peel-off problem.

[0012] Another technical problem to be solved by the present invention is to provide a method for manufacturing a semiconductor multilayer glass substrate and a semiconductor multilayer glass substrate, which can shorten the process and reduce the process cost by simultaneously implementing the formation of a solidified electrode through a single sintering at the end of the process, a strong bonding between the solidified electrode and the glass substrate, and a strong interlayer bonding between the laminated glass substrates.

[0013] Another technical problem to be solved by the present invention is to provide a method for manufacturing a multilayer glass substrate for semiconductors and a multilayer glass substrate for semiconductors, which can increase the interlayer bonding strength between glass substrates when manufacturing the glass substrate in the form of a multilayer glass substrate advantageous for packaging.

[0014] According to one aspect of the present invention as a means for solving the problem, a method for manufacturing a multilayer glass substrate for semiconductors is provided, including a preparation step of preparing a glass core in which a trench is formed in the thickness direction, a brazing adhesive layer forming step of forming a brazing adhesive layer on a surface defining the trench, a preliminary electrode forming step of forming a preliminary electrode in the trench in which the brazing adhesive layer is formed using a conductive paste, a glass bonding layer forming step of forming a glass bonding layer by printing a glass bonding material on the surface of the glass core except for some areas, a substrate laminating step of arranging another glass core on the glass bonding layer, and a brazing bonding step between the surface defining the trench and the preliminary electrode by heat treatment at a specific temperature, a main curing step of the preliminary electrode, and a sintering step of sealingly bonding two glass cores arranged in a laminated arrangement.

[0015] In the preparation step of the method for manufacturing a multilayer glass substrate for semiconductors according to one aspect of the present invention, the glass core may be an oxide-reinforced glass having a thickness of 20 to 30 μm and high strength, corrosion resistance, transparency, and hardness at room temperature.

[0016] In a method for manufacturing a multilayer glass substrate for semiconductors according to one aspect of the present invention, the glass core may be borosilicate glass or aluminosilicate glass.

[0017] In a method for manufacturing a multilayer glass substrate for semiconductors according to one aspect of the present invention, the step of forming the brazing adhesive layer may include a step of forming a cover layer having a pattern hole formed in a shape corresponding to the trench on the glass core, a step of spraying metal particles for brazing at high pressure toward the cover layer in a vacuum atmosphere and depositing the particles on the surface of the trench exposed through the pattern hole, and a step of removing the cover layer.

[0018] In a method for manufacturing a multilayer glass substrate for semiconductors according to one aspect of the present invention, the step of forming the cover layer may include the steps of forming a photosensitive layer on the glass core, placing a mask covering a portion except for the trench on the photosensitive layer and then exposing the mask, and developing the exposed portion to form a cover layer having a pattern hole corresponding to the trench.

[0019] In a method for manufacturing a multilayer glass substrate for semiconductors according to one aspect of the present invention, the preliminary electrode forming step may include a step of filling a trench in which a brazing adhesive layer is formed with a conductive paste, and a step of drying the conductive paste to form a cured preliminary electrode.

[0020] In the step of filling the conductive paste in the method for manufacturing a multilayer glass substrate for semiconductors according to one aspect of the present invention, a screen mask having an open pattern corresponding to the trench is placed on the upper surface of the glass core, and a conductive paste is applied on the screen mask, and then a squeegee moving from one side to the other is used to pass the conductive paste through the open pattern portion of the screen mask, thereby filling the trench with a conductive paste.

[0021] In the step of forming the cured preliminary electrode in the method for manufacturing a multilayer glass substrate for semiconductors according to one aspect of the present invention, the conductive paste can be cured by drying at a temperature of 80°C or higher and 120°C or lower.

[0022] As a preferred embodiment, the material of the brazing adhesive layer may be an Al-Si alloy having a silicon (Si) content of 12.5 to 12.6 wt% and the remainder being aluminum (Al), and the conductive paste may be an Ag paste using silver (Ag) as a main base. In addition, the glass bonding material may be a glass frit paste including glass frit having a melting point higher than the melting point of the Al-Si alloy and lower than the softening point of the glass core.

[0023] In this case, in the sintering step, it is preferable to sinter at a temperature between the melting point of the glass frit and the softening point of the glass core, so that the brazing bonding of the preliminary electrode, the main hardening of the preliminary electrode, and the sealing bonding between the two glass cores arranged in a laminate are realized at once.

[0024] In a preferred embodiment, the sintering temperature in the sintering step may be between 600°C and 630°C.

[0025] As another preferred embodiment, the material of the brazing bonding layer may be a Mg-Zn alloy having a zinc (Zn) content of 5 to 6 wt% and the remainder being magnesium (Mg), and the conductive paste may be an Ag paste using silver (Ag) as a main base. In addition, the glass bonding agent may be a high-temperature epoxy adhesive or a high-temperature silicone adhesive that maintains adhesive performance at a temperature higher than the melting point of the Mg-Zn alloy.

[0026] In this case, in the sintering step, it is preferable to sinter at a temperature at least higher than the melting point of the Mg-Zn alloy so that brazing bonding of the preliminary electrode, main hardening of the preliminary electrode, and sealing bonding between the two glass cores arranged in a laminate are realized at once.

[0027] In another preferred embodiment, the sintering temperature in the sintering step may be between 350°C and 370°C.

[0028] In a method for manufacturing a multilayer glass substrate for semiconductors according to one aspect of the present invention, the conductive paste may have a composition including 70 to 90 wt% of silver (Ag) powder, 5 to 10 wt% of a binder, 4 to 15 wt% of an organic solvent, and 1 to 5 wt% of an additive. In this case, the organic solvent may be any one selected from the group consisting of one or a combination of butyl acetate, terpineol, turpentine, butyl carbitol, and isopropyl alcohol, and the binder may be an acrylic binder or a nitrocellulose binder. In addition, the additive may be any one selected from the group consisting of one or a combination of glycerin, polyethylene glycol (PEG), and glass powder.

[0029] In the method for manufacturing a multilayer glass substrate for semiconductors according to one aspect of the present invention, in the step of forming the glass bonding layer, the glass bonding layer can be formed by printing the glass bonding material with a uniform thickness on the surface of the glass core except for some areas using screen printing and then pre-sintering.

[0030] According to another aspect of the present invention as a means for solving the problem, a multilayer glass substrate for semiconductors is provided, which includes two or more glass cores arranged in a stacked manner, a trench formed in the thickness direction in the glass cores, a brazing adhesive layer formed on a surface dividing the trench, an electrode bonded to the brazing adhesive layer within the trench, and a glass bonding layer mediating a sealing bond between the two glass cores.

[0031] In a multilayer glass substrate for semiconductors according to another aspect of the present invention, the glass core may be borosilicate glass or aluminosilicate glass having a thickness of 20 to 30 μm.

[0032] In a multilayer glass substrate for semiconductors according to another aspect of the present invention, the brazing adhesive layer may be formed through vacuum deposition, which sprays brazing metal particles at high pressure in a vacuum atmosphere. In addition, the electrode may be formed by filling a conductive paste containing conductive particles into the trench where the brazing adhesive layer is formed, and then sintering the conductive paste.

[0033] As a preferred embodiment, in a multilayer glass substrate for semiconductors according to another aspect of the present invention, the material of the brazing bonding layer may be an Al-Si alloy having a silicon (Si) content of 12.5 to 12.6 wt% and the remainder being aluminum (Al), and the conductive paste may be an Ag paste using silver (Ag) as a main material. In addition, the glass bonding layer may be formed by printing a glass frit paste including a glass frit having a melting point higher than the melting point of the Al-Si alloy and lower than the softening point of the glass core on the surface of the glass core where the electrode is exposed, excluding some areas, and then pre-sintering the printed glass frit paste.

[0034] As another preferred embodiment, in the multilayer glass substrate for semiconductors according to another aspect of the present invention, the material of the brazing bonding layer may be a Mg-Zn alloy having a zinc (Zn) content of 5 to 6 wt% and the remainder being magnesium (Mg). In this case, the glass bonding layer may be formed by printing a high-temperature epoxy adhesive or a high-temperature silicone adhesive that maintains adhesive performance at a temperature higher than the melting point of the Mg-Zn alloy on the surface of the glass core where the electrode is exposed, excluding some areas, and then drying the printed material.

[0035] In another aspect of the present invention, in a multilayer glass substrate for semiconductors, the conductive paste may have a composition including 70 to 90 wt% of silver (Ag) powder, 5 to 10 wt% of a binder, 4 to 15 wt% of an organic solvent, and 1 to 5 wt% of an additive. In this case, the organic solvent may be any one selected from the group consisting of one or a combination of butyl acetate, terpineol, turpentine, butyl carbitol, and isopropyl alcohol, and the binder may be an acrylic binder or a nitrocellulose binder. In addition, the additive may be any one selected from the group consisting of one or a combination of glycerin, polyethylene glycol (PEG), and glass powder.

[0036] In a multilayer glass substrate for semiconductors according to another aspect of the present invention, the electrodes may preferably be composed of a signal electrode for transmitting a signal or information, a power electrode for supplying power isolated from the signal electrode, and a current-carrying electrode formed for each glass core for electrical connection between the mutually matched electrodes of two neighboring glass cores.

[0037] As a preferred example, the signal electrode and power electrode can be formed on each glass core.

[0038] As another preferred example, a signal electrode may be formed on one glass core, a power electrode may be formed on another glass core, and the glass cores on which the signal electrode is formed and the glass cores on which the power electrode is formed may be alternately laminated.

[0039] According to the present invention, since it is a method of simultaneously forming a solidified electrode, brazing bonding between the solidified electrode and a glass substrate (glass core), and forming a strong interlayer bond between the glass substrates through a single sintering performed at the final stage of the process, the process for manufacturing a semiconductor glass substrate in the form of a multilayer glass substrate advantageous for packaging can be greatly shortened, and the process cost can be reduced accordingly.

[0040] In addition, since the method is to form a brazing adhesive layer in a trench through deposition, fill it with conductive paste, and then form a solidified electrode through a final firing, a high-density electrode in which conductive particles are strongly fused to each other can be formed, and the adhesive strength of the electrode can be greatly increased as the metal particles of the brazing adhesive layer and the conductive particles forming the electrode react with each other to form a strong bond due to the heat applied during the firing process.

[0041] In addition, since the electrode is formed in a trench electrode structure with at least three sides in contact with the glass substrate, the adhesive strength of the electrode is further increased, which has the effect of significantly improving the electrode peel-off that occurs in conventional glass substrates, and thus, a highly reliable semiconductor multilayer glass substrate with uniform and strong electrode bonding can be provided. In addition, when silver is used as the electrode material, there is an advantage of being able to be fired in an air atmosphere.

[0042] In addition, in the case of an embodiment in which bonding between glass substrates is implemented using a glass material having a lower melting point than the glass core, the coefficients of thermal expansion (CTE) of the glass core and the glass bonding layer can be matched, thereby resolving the problem of interlayer separation between the glass substrates after bonding due to the difference in the coefficients of thermal expansion, and as a result, a highly reliable multilayer glass substrate with further improved bonding reliability between the glass cores (glass substrates) can be provided.

[0043] FIG. 1 is a flowchart illustrating a method for manufacturing a multilayer glass substrate for semiconductors according to an embodiment of the present invention.

[0044] FIG. 2 is a process schematic diagram schematically illustrating a manufacturing process of a multilayer glass substrate for semiconductors according to an embodiment of the present invention.

[0045] FIG. 3 is a process schematic diagram schematically illustrating a process of forming a bonding metal layer in a trench in a method for manufacturing a multilayer glass substrate for semiconductors according to an embodiment of the present invention.

[0046] FIG. 4 is a drawing schematically illustrating a conductive paste filling step in a method for manufacturing a multilayer glass substrate for semiconductors according to an embodiment of the present invention.

[0047] FIG. 5 is a cross-sectional configuration diagram of a multilayer glass substrate for semiconductors manufactured by a method for manufacturing a multilayer glass substrate for semiconductors according to an embodiment of the present invention.

[0048] FIG. 6 is an enlarged view of the main part of the multilayer glass substrate for semiconductors illustrated in FIG. 4, and is an enlarged view of the main part of the present invention, which is an enlarged view of part 'A' of FIG. 5.

[0049] Fig. 7 is a drawing showing another preferred embodiment of a multilayer glass substrate for semiconductors.

[0050] Hereinafter, preferred embodiments of the present invention will be described in detail.

[0051] In describing embodiments of the present invention, identical or similar components will be assigned the same reference numbers, and redundant descriptions thereof will be omitted. Furthermore, if a detailed description of a related known technology is deemed to obscure the gist of the embodiments disclosed herein, such detailed description will be omitted.

[0052] In addition, the attached drawings are only intended to facilitate easy understanding of the embodiments disclosed in this specification, and the technical ideas disclosed in this specification are not limited by the attached drawings, and it is to be understood that all modifications, equivalents, or substitutes included in the spirit and technical scope of the present invention are included.

[0053] Additionally, when a component is referred to as being "connected" or "connected" to another component, it should be understood that it may be directly connected or connected to that other component, but that there may also be other components in between.

[0054] On the other hand, when it is said that a component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between.

[0055] In addition, it should be understood that terms such as “include,” “have,” and “have” used in describing embodiments of the present invention are intended to specify the presence of a feature, number, step, operation, component, part, or combination thereof of the invention, and do not preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0056] The drawings are intended solely to facilitate understanding of the invention and should not be construed as limiting the scope of the invention. Furthermore, it should be noted that relative thicknesses, lengths, and sizes in the drawings may be exaggerated for convenience and clarity of explanation.

[0057] FIG. 1 is a flowchart for explaining a method for manufacturing a multilayer glass substrate for semiconductors according to an embodiment of the present invention, and FIG. 2 is a process schematic diagram schematically illustrating a process for manufacturing a multilayer glass substrate for semiconductors according to an embodiment of the present invention.

[0058] FIG. 1 is a flowchart for explaining a method for manufacturing a multilayer glass substrate for semiconductors according to an embodiment of the present invention, and FIG. 2 is a process schematic diagram schematically illustrating a process for manufacturing a multilayer glass substrate for semiconductors according to an embodiment of the present invention.

[0059] Referring to FIGS. 1 and 2, a method for manufacturing a multilayer glass substrate for semiconductors according to an embodiment includes a preparation step (S100) of preparing a glass core (10) in which a trench (20) is formed in the thickness direction, a brazing adhesive layer forming step (S200) of forming a brazing adhesive layer (25) on a surface that divides the trench (20), and a preliminary electrode forming step (S300) of filling a conductive paste into the trench (20) in which the brazing adhesive layer (25) is formed and drying it to form a preliminary electrode (32).

[0060] The method for manufacturing a multilayer glass substrate for semiconductors according to an embodiment also includes a glass bonding layer forming step (S400) of forming a glass bonding layer (40) by printing a glass bonding material on the surface of a glass core (10), a substrate laminating step (S500) of placing another glass core (10b) on the glass bonding layer (40), and a sintering step (S600) for brazing bonding between a surface defining a trench (20) and a preliminary electrode (32), forming a solidified electrode by main curing of the preliminary electrode (32), and sealing bonding between two glass cores (10a, 10b) arranged in a laminated arrangement.

[0061] In the method for manufacturing a semiconductor glass substrate according to an embodiment, the glass core (Glass core), which is the main material, i.e., the glass core (10) prepared in the preparation step (S100), may be an oxide-tempered glass. In the method for manufacturing a semiconductor glass substrate according to an embodiment, the glass core (10), which is the main material, may be a tempered glass whose main component is an oxide, which has a thickness of 20 to 30 ㎛, high strength and corrosion resistance at room temperature, and transparency and hardness.

[0062] As a preferred example, the glass core (10) that is the main material in the method for manufacturing a semiconductor glass substrate according to the embodiment may be borosilicate glass that is a glass that mainly contains boric acid instead of silicic acid, contains at least 5% of boric acid, has chemical acid resistance and weather resistance due to a low coefficient of expansion, and has excellent thermal shock resistance.

[0063] As another preferred example, the glass core (10) that is a main material in the method for manufacturing a semiconductor glass substrate according to the embodiment may be an aluminosilicate glass that is made of alumina and boron oxide and has similar properties to borosilicate glass, but has superior heat resistance and high chemical resistance compared to borosilicate glass.

[0064] In the preparation step (S100), a glass core (10) having a trench (20) formed in the thickness direction is prepared. The trench (20) can be formed in the thickness direction in the glass core (10) through etching. For example, it can be formed by forming a predetermined pattern on the glass core (10) with a photosensitive agent through a known photolithography process for drawing a semiconductor circuit on a wafer, and performing an etching process using the photosensitive agent with the pattern formed thereon as a mask.

[0065] For reference, the term 'trench (20)' used in describing the present invention means a fine hole (Via, 20b) or groove (20a) formed in the thickness direction in the glass core (10) through an etching process.

[0066] For etching to form a trench (20), dry etching using plasma or laser or wet etching using an etchant can be applied. In the case of wet etching, HF or NaOH can be used as the etchant. HF has the advantage of being able to etch at room temperature and having a fast etching speed, and NaOH has the advantage of being able to etch precisely, although its etching conditions are more demanding than those of HF.

[0067] Depending on the embodiment, a LIDE (Laser induced Deep Etching) method may be applied, which performs pre-processing with a laser and then completes the trench (20) through post-processing using chemical etching. The LIDE method is a technology that induces a selective chemical phase change in glass using a laser and then selectively etches only the area transformed by the laser through a chemical etching process to form a trench.

[0068] Among the trenches (20, microscopic holes and grooves) formed in the glass core (10) through etching, the groove (20a) can be formed with a specific depth and width. Considering that the thickness of the glass core (10) is 20 to 30 ㎛, the depth (d) of the groove (20a) among the trenches (microscopic holes and grooves) formed in the glass core (10) in the etching step (S200) is preferably 0.8 to 1.2 ㎛, and its width (groove width, w) is preferably 1.8 to 2.2 ㎛.

[0069] The brazing adhesive layer forming step (S200) is a step of forming a brazing adhesive layer (25) with a constant thickness on the wall surface or the wall surface and the bottom surface of the trench (20) formed in the glass core (10). In the brazing adhesive layer forming step (S200), the brazing adhesive layer (25) can be formed by depositing metal particles capable of forming a strong bond with glass with a constant thickness on the wall surface or the wall surface and the bottom surface that divides the trench (20).

[0070] In the brazing adhesive layer forming step (S200), the brazing adhesive layer (25) may be composed of a metal that can be well attached to glass and has good compatibility with the main substrate (conductive particles) of the preliminary electrode (32) described later. For example, when the main substrate constituting the preliminary electrode (32) is silver (Ag), the material of the brazing adhesive layer (25) may be an Al-Si alloy mainly composed of aluminum (Al) and silicon (Si) or an Mg-Zn alloy mainly composed of magnesium (Mg) and zinc (Zn).

[0071] When using an Al-Si alloy as the material of the brazing bonding layer (25), an Al-Si alloy having a silicon (Si) content of 12.5 to 12.6 wt% and the remainder being aluminum (Al) can be used. In addition, when using an Mg-Zn alloy as the material of the brazing bonding layer (25), it is preferable to use an Mg-Zn alloy having a zinc (Zn) content of 5 to 6 wt% and the remainder being magnesium (Mg).

[0072] Al-Si alloys are characterized by their light weight and high ductility and malleability. They also possess a low melting point and shrinkage, excellent corrosion resistance, and good fluidity in a molten state. Therefore, they readily melt at relatively low temperatures, forming a fusion brazing interface between glass and metal, mediating a strong bond between them. Therefore, they are suitable as brazing materials for glass substrates.

[0073] Mg-Zn alloys offer high strength despite their low specific gravity. They also offer excellent corrosion resistance and, like Al-Si alloys, excellent fluidity in a molten state. Notably, with a melting point of approximately 340°C, they melt at a lower temperature than Al-Si alloys, enabling them to form a fusion brazing interface between glass and metal, forming a strong bond between the two.

[0074] In the brazing adhesive layer forming step (S200), the brazing adhesive layer (25) can be formed with a constant thickness (t1) on the surface defining the trench (20) through sputtering, which sprays and deposits particles of the mentioned alloy (Al-Si alloy or Mg-Zn alloy) under strong pressure in a vacuum atmosphere. As a preferred example, the brazing adhesive layer (25) formed in the trench (20) can be formed with a single layer structure having a thickness of 50 nm.

[0075] The process of forming a brazing adhesive layer in a trench in the brazing adhesive layer formation step will be examined in more detail with reference to Fig. 3.

[0076] FIG. 3 is a process schematic diagram schematically illustrating a process of forming a brazing adhesive layer in a trench in a method for manufacturing a multilayer glass substrate for semiconductors according to an embodiment of the present invention.

[0077] Referring to FIG. 3, the brazing adhesive layer forming step (S200) may include a step (S202) of forming a cover layer (70) in which a pattern hole (72) is formed in a shape corresponding to the trench (20) on the glass core (10), a step (S204) of spraying metal particles for brazing at high pressure toward the cover layer (70) in a vacuum atmosphere and depositing them on the surface of the trench (20) exposed through the pattern hole (72) in a vacuum atmosphere, and a step (S206) of removing the cover layer (70).

[0078] The cover layer forming step (S202) includes a step (S202-1) of forming a photosensitive layer (50) with a uniform thickness by applying a photosensitive agent on a glass core (10). In addition, the step includes a step (S202-2) of placing a mask (60) covering the remaining portion except for the trench (20) on the photosensitive layer (50) and then exposing it, and a step (S202-3) of developing the exposed portion to finally form a cover layer (70) having a pattern hole (72).

[0079] In the cover layer removal step (S206), a process may be performed to remove the cover layer (70) and unnecessary deposits on the cover layer (70) at once, for example, through dry ashing using plasma. In some cases, the cover layer (70) and unnecessary deposits may be removed through a CMP (Chemical Mechanical Polishing) process that flattens the surface of the glass core (10) while removing the cover layer (70) and unnecessary deposits.

[0080] The preliminary electrode forming step (S300) is a step of forming a preliminary electrode (32) by filling a trench (20) in which a brazing adhesive layer (25) is formed with a constant thickness with conductive paste. The preliminary electrode forming step (S400) includes a step (S302) of filling a trench (20) in which a brazing adhesive layer (25) is formed with conductive paste, and a step (S304) of drying the conductive paste at a temperature of 80°C or higher and 120°C or lower to form a cured preliminary electrode (32).

[0081] In the paste filling step (S302), as shown in FIG. 4, a screen mask (M) having an open pattern (P) corresponding to a trench (20) is placed on the upper surface of the glass core (10), and a conductive paste is applied on the screen mask (M), and then a squeegee (S) that moves from one side to the other (see the direction of the arrow) is used to pass the conductive paste through the open pattern (P) portion, thereby filling the conductive paste through a type of screen printing method.

[0082] In an embodiment, the conductive particles, which are the main substrate constituting the conductive paste, may be silver (Ag). Silver (Ag) has an electrical conductivity of about 63.01X10 6It has the highest S / m (Siemens per meter) of any metal. In particular, using silver (Ag) as the primary substrate for conductive paste allows for burning in an air atmosphere, reducing the process and lowering processing costs. This is due to silver's less sensitivity to oxidation than other metals.

[0083] In an embodiment, the conductive paste may include silver powder, a binder that helps to bind the silver powder to each other and adhere to a substrate, an organic solvent for uniform dispersion of the silver powder, and an additive for controlling sintering temperature, paste viscosity, and oxidation prevention. A preferred composition of the conductive paste in an embodiment may be 70 to 90 wt% of silver powder, 5 to 10 wt% of binder, 4 to 15 wt% of organic solvent, and 1 to 5 wt% of additive.

[0084] In an embodiment, the organic solvent may be one selected from the group consisting of butyl acetate, terpineol, turpentine, butyl carbitol, and isopropyl alcohol, or a combination thereof, the binder may be an acrylic binder or a nitrocellulose binder, and the additive may be one selected from the group consisting of glycerin, polyethylene glycol (PEG), and glass powder, or a combination thereof.

[0085] The glass bonding layer forming step (S400) is a step of forming a glass bonding layer (40) by printing a glass bonding material on the surface of a glass core (10). In the glass bonding layer forming step (S400), a glass bonding layer (40) can be formed by printing a glass bonding material with a uniform thickness on the surface of a glass core (10) and then performing preliminary sintering. Here, the preliminary sintering can be performed under temperature and pressure conditions that can prevent deterioration of the glass core while sufficiently applying heat to the glass bonding material.

[0086] In forming a glass bonding layer (40) on the surface of the glass core (10) where the preliminary electrode (10) is exposed in the glass bonding layer forming step (S400), screen printing may be used. In this case, it is preferable to print the glass bonding material only in the area excluding the area where the preliminary electrode (32b) formed in the microscopic hole (Via, 20b) of the trench is exposed to the outside to form an electrical connection with the preliminary electrode (32b) of another glass core (10).

[0087] The glass bonding agent forming the glass bonding layer (40) may vary depending on the material of the aforementioned brazing adhesive layer (25). As a preferred example, if the brazing material is the aforementioned Al-Si alloy, glass frit paste may be used as the glass bonding agent. As another preferred example, if the brazing material is a Mg-Zn alloy, a high-temperature epoxy adhesive or high-temperature silicone adhesive that maintains adhesive performance even at a temperature higher than the melting point of the Mg-Zn alloy may be used as the glass bonding agent.

[0088] In an embodiment in which glass frit paste is used as a glass bonding material, the glass frit paste may be composed of glass frit as a main material having a melting point higher than the melting point of an Al-Si alloy applied as a brazing material and approximately 100°C lower than the softening point of a glass core, and including an organic solvent and a binder.

[0089] In this case, the glass frit may be, for example, a mixture of silica sand, aluminum oxide (Al2O3), and calcium carbonate (CaCO3) in a specific ratio, melted at high temperature, then rapidly cooled and ground into a fine powder. The organic solvent may be, for example, butyl acetate or terpineol, or a combination thereof, and an acrylic binder or a nitrocellulose binder may be used as the binder.

[0090] In the substrate lamination step (S500), a process of placing another glass core (10b) on the glass bonding layer (40) of the glass core (10a) is performed. More specifically, in the substrate lamination step (S500), two glass cores (10a, 10b) are arranged in a laminated structure so as to face each other with the glass bonding layer (40) interposed therebetween. In the substrate lamination step (S500), accurate and precise lamination can be realized by using a dedicated lamination device including a sensor, an alignment unit, a jig, etc.

[0091] The sintering step (S600) is a step for implementing a brazing bond between the surface defining the trench (20) and the preliminary electrode (32), forming a solidified electrode through the main hardening of the preliminary electrode (32), and sealing bonding between the two glass cores (10a, 10b) arranged in a laminated manner through a single sintering. The sintering temperature in the sintering step (S600) may vary depending on the brazing material that mediates the physical bonding between the surface defining the trench (20) and the preliminary electrode (32), the main base material of the conductive paste that will form the electrode, and the glass bonding material that forms the glass bonding layer (40).

[0092] As an example, when the brazing material is an Al-Si alloy having a silicon (Si) content of 12.5 to 12.6%, the main substrate of the conductive paste is silver (Ag), and a glass frit paste including glass frit having a melting point higher than the melting point of the Al-Si alloy and about 100°C lower than the softening point of the glass core is used as the glass bonding material, sintering can be performed at a temperature between the melting point of the glass frit and the softening point of the glass core.

[0093] Preferably, considering that the melting point of the Al-Si alloy having a Si content of 12.5% ​​is 577°C and the softening point of the borosilicate tempered glass is about 820°C, in one embodiment, when sintering is performed at a temperature between 600°C and 630°C, a strong brazing bond of the preliminary electrode by melting of the brazing adhesive layer, solidification (main hardening) of the preliminary electrode by heating, and a sealing bond between the two glass cores arranged in a laminate can be realized at once.

[0094] As another embodiment, when the brazing material is a Mg-Zn alloy having a zinc (Zn) content of 5 to 6 wt%, the main substrate of the conductive paste is silver (Ag), and a high-temperature epoxy adhesive or high-temperature silicone adhesive that maintains adhesive performance at a temperature higher than the melting point of the Mg-Zn alloy is used as the glass bonding agent, the sintering temperature in the sintering step (S600) may be at least a temperature higher than the melting point of the Mg-Zn alloy.

[0095] Preferably, considering that the melting point of the Mg-Zn alloy having a Zn content of 6% is about 340°C, in another embodiment, a strong brazing bond of the preliminary electrode by melting of the brazing adhesive layer, solidification (main hardening) of the preliminary electrode by heating, and a sealing bond between two laminated glass cores can be realized at once by sintering only in a temperature range of 350°C to 370°C, which is relatively low compared to one embodiment.

[0096] As mentioned, silver (Ag) is less susceptible to oxidation than other conductive metals. Therefore, sintering in air is possible. However, at high temperatures above 700°C, the silver surface may oxidize, and at temperatures below 350°C, adhesion between silver particles decreases and organic solvents or binders may remain. Therefore, when using silver (Ag) paste as the conductive paste that will form the electrode, the appropriate sintering temperature is between 350°C and 700°C.

[0097] The sintering step (S600) may include a drying process (not shown). By performing an additional drying process after the sintering process, any organic solvent remaining within the conductive paste can be more reliably removed. It is preferable to perform the drying process at a temperature and time that allows the organic solvent to be vaporized and removed while also allowing the electrode temperature to be gradually cooled.

[0098] According to the manufacturing method according to the embodiment of the present invention, since it is a method of simultaneously implementing the formation of a solidified electrode, brazing bonding between the solidified electrode and the glass substrate (glass core), and strong interlayer bonding between the glass substrates through a single sintering performed in the final stage of the process, the process for manufacturing a semiconductor glass substrate in the form of a multilayer glass substrate advantageous for packaging can be greatly shortened, and the process cost can be reduced accordingly.

[0099] In addition, since the method is to form a brazing adhesive layer in a trench through deposition, fill it with conductive paste, and then form a solidified electrode through a final firing, a high-density electrode in which conductive particles are strongly fused to each other can be formed, and the adhesive strength of the electrode can be greatly increased as the metal particles of the brazing adhesive layer and the conductive particles forming the electrode react with each other to form a strong bond due to the heat applied during the firing process.

[0100] In addition, since the electrode is formed in a trench electrode structure with at least three sides in contact with the glass substrate, the adhesive strength of the electrode is further increased, which has the effect of significantly improving the electrode peel-off that occurs in conventional glass substrates, and thus, a highly reliable semiconductor multilayer glass substrate with uniform and strong electrode bonding can be provided. In addition, when silver is used as the electrode material, there is an advantage of being able to be fired in an air atmosphere.

[0101] In addition, in the case of an embodiment in which bonding between glass substrates is implemented using a glass material having a lower melting point than the glass core, the coefficients of thermal expansion (CTE) of the glass core and the glass bonding layer can be matched, thereby resolving the problem of interlayer separation between the glass substrates after bonding due to the difference in the coefficients of thermal expansion, and as a result, a highly reliable multilayer glass substrate with further improved bonding reliability between the glass cores (glass substrates) can be provided.

[0102] FIG. 5 is a cross-sectional view of a multilayer glass substrate for semiconductors manufactured by the method for manufacturing a multilayer glass substrate for semiconductors described above, and FIG. 6 is an enlarged view of the main part of the present invention, which enlarges the 'A' portion of FIG. 5.

[0103] Referring to FIGS. 5 and 6, a multilayer glass substrate (1) for semiconductors includes two or more glass cores (10a, 10b) that are arranged in a stacked manner, each having a trench (20), and a glass bonding layer (40) that mediates a sealing bond between the glass cores (10a, 10b) between two adjacent glass cores (10a, 10b). In the trench (20) of each glass core (10a, 10b), a brazing adhesive layer (25) may be formed with a specific thickness on a surface that divides the trench, and an electrode (30) may be bonded to the brazing adhesive layer (25) within the trench (20).

[0104] The trench (20) may be a groove (20a) or a microscopic hole (20b) formed in the thickness direction of the glass core (10), and a glass bonding layer (40) that mediates a sealing bond between two neighboring glass cores (10a, 10b) may be formed on one of the upper and lower surfaces of the glass core (10) or on both the upper and lower surfaces of the glass core (10).

[0105] The glass core (10) may be a tempered glass having a thickness of 20 to 30 ㎛ and a first surface (12, upper surface in the drawing) that is even and a second surface (14, lower surface in the drawing) that is parallel to the first surface, and the trench (20) may be formed by forming a predetermined pattern on the glass core (10) with a photosensitive agent through a photolithography process and performing an etching process using the photosensitive agent with the pattern formed thereon as a mask.

[0106] For reference, the drawing (Fig. 5) illustrates an example of a configuration in which a groove-shaped trench (20a) is formed on the first side (12) of the glass core (10), but is not limited thereto. Depending on the embodiment, a groove-shaped trench (20a) may be formed on the second side (14) of the glass core (10), or a groove-shaped trench (20a) may be formed on both the first side (12) and the second side (14).

[0107] The glass core (10) may be tempered glass having a thickness of 20 to 30 μm. In an embodiment, the glass core (10) may be tempered glass whose main component is oxide, having high strength, corrosion resistance, transparency, and hardness at room temperature. As a preferred example, the glass core (10) may be borosilicate tempered glass. Depending on the embodiment, it may also be aluminosilicate tempered glass.

[0108] Borosilicate tempered glass is a glass that uses boric acid as its main ingredient instead of silica, and contains at least 5% boric acid. It has a low coefficient of expansion, chemical resistance to acid and weather resistance, and excellent thermal shock resistance, making it suitable for semiconductor glass substrates. Aluminum silicate tempered glass is made of alumina and boron oxide, and has similar properties to borosilicate glass, but has superior heat resistance and high chemical resistance compared to borosilicate glass, making it suitable for semiconductor glass substrates.

[0109] Among the trenches (fine holes and grooves) formed in the glass core (10), the groove (20a) can be formed with a specific depth and width. Considering that the thickness of the glass core (10) is 20 to 30 ㎛, among the trenches (fine holes and grooves) formed in the glass core (10), the groove (20a) can be formed with a depth (d) of approximately 0.8 to 1.2 ㎛ and a width (width of the groove, w) of approximately 1.8 to 2.2 ㎛.

[0110] The brazing adhesive layer (25) mediates a strong bond between the electrode (30) and the glass core (10). The brazing adhesive layer (25) can be formed with a constant thickness on all surfaces that define the trench (20). For example, when the trench (20) is formed in a groove shape with a rectangular cross-section (see shape 20a in FIG. 5), the brazing adhesive layer (25) can be formed with a constant thickness on all surfaces that define the trench (20), i.e., the vertical walls facing each other and the flat bottom surface that interconnects the bottoms of these walls.

[0111] The brazing adhesive layer (25) can be formed by depositing metal particles capable of forming a strong bond with glass to a certain thickness on the surface defining the trench (20). The brazing adhesive layer (25) can be composed of a metal that can adhere well to glass and has good matching properties with the particles (conductive particles) of the electrode.

[0112] The brazing adhesive layer (25) can be formed with a constant thickness (t1) on the surface defining the trench (20) through a sputtering process in which brazing metal particles are sprayed and deposited on the surface of the glass core under strong pressure in a vacuum atmosphere. As a preferred example, the brazing adhesive layer (25) formed in the trench (20) can be formed with a single layer structure having a thickness of 50 nm.

[0113] The brazing adhesive layer (25) can be formed, for example, by forming a cover layer (see the preceding FIG. 3) with a pattern hole formed in a shape corresponding to a trench (20) on a glass core (10), spraying metal particles at high pressure toward the cover layer to deposit and form a brazing adhesive layer (25) inside the trench (20) exposed through the pattern hole, and then removing the cover layer on the glass core together with unnecessary deposits through a series of processes such as dry ashing.

[0114] The electrode (30) can be formed from a conductive paste filled in the trench (20). The electrode (30) can be formed by filling the trench (20) with the conductive paste and sintering at a specific temperature. The electrode (30) can be joined to the brazing adhesive layer (25) within the trench (20) while forming a firm bond, except for a surface aligned on the same plane as the surface of the glass core (a surface exposed to the outside).

[0115] The conductive paste constituting the electrode (30) contains conductive particles. The conductive particles may be silver (Ag). Silver (Ag) has an electrical conductivity of about 63.01X10 6 It is the highest among all metals in terms of S / m (Siemens / meter), and especially when silver (Ag) is used as the main base material of conductive paste, it is possible to reduce the process and process cost by allowing burning treatment in an air atmosphere.

[0116] The conductive paste may be a Ag paste comprising silver powder as a main substrate, a binder that helps to bind the silver powder to each other and adhere to a substrate, an organic solvent for uniform dispersion of the silver powder, and an additive for controlling sintering temperature, paste viscosity, oxidation prevention, etc. A preferable composition of the Ag paste may be 70 to 90 wt% of silver powder, 5 to 10 wt% of binder, 4 to 15 wt% of organic solvent, and 1 to 5 wt% of additive.

[0117] In this case, the organic solvent may be one selected from the group consisting of butyl acetate, terpineol, turpentine, butyl carbitol, and isopropyl alcohol, or a combination thereof. The binder may be an acrylic binder or a nitrocellulose binder, and the additive may be one selected from the group consisting of glycerin, polyethylene glycol (PEG), and glass powder, or a combination thereof.

[0118] As a preferred example, the material of the brazing bonding layer (25) may be an Al-Si alloy having a silicon (Si) content of 12.5 to 12.6 wt% and the remainder being aluminum (Al). In addition, the glass bonding layer (40) may be formed by printing a glass frit paste including glass frit having a melting point higher than the melting point of the Al-Si alloy and about 100°C lower than the softening point of the glass core on the surface of the glass core (10) where the electrode is exposed, and then pre-sintering the paste.

[0119] In this case (when the brazing material is an Al-Si alloy having a silicon (Si) content of 12.5 to 12.6 wt%, the electrode material is silver (Ag), and the glass bonding layer is formed of glass frit having a temperature about 100°C lower than the softening point of the glass core), a multilayer glass substrate according to the embodiment can be formed through one sintering performed between the melting point of the glass frit and the softening point of the glass core, preferably between the melting point of the glass frit and a temperature capable of preventing surface oxidation of the silver.

[0120] Here, the glass frit may be, for example, a mixture of silica sand, aluminum oxide (Al2O3), and calcium carbonate (CaCO3) in a specific ratio, melted at high temperature, then rapidly cooled and ground into a fine powder. The organic solvent may be, for example, butyl acetate or terpineol, or a combination thereof, and an acrylic binder or a nitrocellulose binder may be used as the binder.

[0121] As another preferred example, the material of the brazing bonding layer (25) may be a Mg-Zn alloy having a zinc (Zn) content of 5 to 6 wt% and the remainder being magnesium (Mg). In addition, the glass bonding layer (40) may be formed by printing a high-temperature epoxy adhesive or a high-temperature silicone adhesive that maintains adhesive performance at a temperature higher than the melting point of the Mg-Zn alloy on the surface of the glass core where the electrode is exposed and then drying it.

[0122] In this case (wherein the brazing material is a Mg-Zn alloy having a zinc (Zn) content of 5 to 6 wt%, the electrode material is silver (Ag), and the glass bonding layer is formed of a high-temperature epoxy adhesive or high-temperature silicone adhesive that maintains adhesive performance at a temperature higher than the melting point of the Mg-Zn alloy), a multilayer glass substrate according to the embodiment can be formed through a single sintering performed at a temperature that is at least higher than the melting point of the Mg-Zn alloy and can prevent surface oxidation of the silver.

[0123] Meanwhile, screen printing may be used to form a glass bonding layer (40) that mediates strong bonding between two glass cores (10a, 10b). In this case, the glass bonding layer (40) may be formed to a predetermined thickness only in an area excluding the portion where the electrode (30b, current-carrying electrode) formed in a microscopic hole (Via, 20b) of a trench of the glass core (10a) is exposed to the outside to form an electrical connection with the corresponding electrode (30b) of another glass core (10b).

[0124] Fig. 7 is a drawing showing another preferred embodiment of a multilayer glass substrate for semiconductors.

[0125] Referring to Fig. 7, the electrode (30) formed on the multilayer glass substrate (1) for semiconductors can be divided into a signal electrode (30a), a power electrode (30c), and a current electrode (30b) that are isolated from each other.

[0126] Signals or information can be transmitted between glass cores (10a, 10b) through the signal electrode (30a), and power can be supplied through the power electrode (30c). In addition, a current-carrying electrode (30b) can be formed for each glass core (10a, 10b) for electrical connection between the mutually matching electrodes of two neighboring glass cores.

[0127] The signal electrode (30a) and the power electrode (30c) may be formed with different widths and depths. For example, as in the example of Fig. 7, the power electrode (30c) may be formed wider and deeper than the signal electrode (30a).

[0128] As illustrated in (a) of Fig. 7, the signal electrode (30a) and the power electrode (30c) can be formed for each glass core (10a, 10b). That is, each of the glass cores (10a, 10b) can be equipped with both the signal electrode (30a) and the power electrode (30c). This configuration in which each of the glass cores (10a, 10b) is equipped with both the signal electrode (30a) and the power electrode (30c) is advantageous in terms of compactness and high integration of the multilayer glass substrate.

[0129] In contrast, as illustrated in (b) of FIG. 7, the signal electrode (30a) and the power electrode (30b) may be formed on different glass cores, respectively. That is, the signal electrode (30a) may be formed on one glass core (10a), and the power electrode (30c) may be formed on the other glass core (10b). In this case, the glass core (10a) on which the signal electrode (30a) is formed and the glass core (10b) on which the power electrode (30c) is formed may be alternately laminated and arranged.

[0130] Although a configuration like (b) of Fig. 7 has disadvantages in terms of compactness or integration compared to a configuration like (a) of the previous Fig. 7, electrical interference between the signal electrode (30a) and the power electrode (30c) can be reliably prevented, especially when a high-voltage power source is applied, from being distorted by the high-voltage power source, thereby preventing the signal or information transmitted through the signal electrode (30a).

[0131] The multilayer glass substrate for semiconductors, having the above configuration, has electrodes formed in the form of trench electrodes that are bonded to the glass substrate (glass core) on at least three sides. This significantly enhances the adhesion of the electrodes to the glass substrate, thereby significantly improving problems of the prior art, such as electrode peel-off. Consequently, a highly reliable product with robust and uniform electrode adhesion quality can be provided.

[0132] The above description is merely an example of the technical idea of ​​the present invention, and those skilled in the art will appreciate that various modifications and variations can be made without departing from the essential characteristics of the present invention.

[0133] Accordingly, the embodiments disclosed in the present invention are intended to illustrate, rather than limit, the technical concept of the present invention, and the scope of the technical concept of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical concepts within the scope equivalent thereto should be construed as being included within the scope of the present invention.

Claims

1. A preparatory step of preparing a glass core in which a trench is formed in the thickness direction; A brazing adhesive layer forming step of forming a brazing adhesive layer on a surface that divides the trench; A preliminary electrode forming step of forming a preliminary electrode in a trench in which a brazing adhesive layer is formed using a conductive paste; A glass bonding layer forming step of forming a glass bonding layer by printing a glass bonding material on the surface of a glass core except for some areas; A substrate lamination step of placing another glass core on the glass bonding layer; and A method for manufacturing a multilayer glass substrate for semiconductors, comprising: a brazing bonding step between a surface that divides a trench by heat treatment at a specific temperature and a preliminary electrode; a curing step of the preliminary electrode; and a sintering step of sealingly bonding two glass cores arranged in a laminated arrangement.

2. In paragraph 1, A method for manufacturing a multilayer glass substrate for semiconductors, wherein in the above preparation step, the glass core is an oxide-reinforced glass having a thickness of 20 to 30 ㎛ and high strength, corrosion resistance, transparency, and hardness at room temperature.

3. In paragraph 2, A method for manufacturing a multilayer glass substrate for semiconductors, wherein the glass core is borosilicate glass or aluminosilicate glass.

4. In paragraph 1, The above brazing adhesive layer forming step is: A step of forming a cover layer having a pattern hole formed in a shape corresponding to the trench on the glass core; A step of spraying metal particles for brazing at high pressure toward the cover layer in a vacuum atmosphere and depositing them on the surface of the trench exposed through the pattern hole; and A method for manufacturing a multilayer glass substrate for semiconductors, comprising a step of removing the above cover layer.

5. In paragraph 4, The step of forming the above cover layer is: A step of forming a photosensitive layer on the glass core; A step of placing a mask covering the remaining portion except for the trench on the photosensitive layer and then exposing it; and A method for manufacturing a multilayer glass substrate for semiconductors, comprising: a step of developing an exposed portion to form a cover layer having a pattern hole corresponding to the trench; 6. In paragraph 1, The above preliminary electrode forming step is, A step of filling a trench in which a brazing adhesive layer is formed with conductive paste; A method for manufacturing a multilayer glass substrate for semiconductors, comprising: a step of drying the conductive paste to form a cured preliminary electrode.

7. In paragraph 6, In the step of filling the above conductive paste, A method for manufacturing a multilayer glass substrate for semiconductors, wherein a screen mask having an open pattern corresponding to the trench is placed on the upper surface of a glass core, a conductive paste is applied on the screen mask, and then a squeegee moving from one side to the other is used to pass the conductive paste through the open pattern portion of the screen mask to fill the trench.

8. In paragraph 6, In the step of forming the above-mentioned hardened preliminary electrode, A method for manufacturing a multilayer glass substrate for semiconductors, wherein the conductive paste is cured by drying at a temperature of 80°C or higher and 120°C or lower.

9. In paragraph 1, The material of the above brazing adhesive layer is an Al-Si alloy having a silicon (Si) content of 12.5 to 12.6 wt% and the remainder being aluminum (Al). The above conductive paste is an Ag paste using silver (Ag) as the main substrate. A method for manufacturing a multilayer glass substrate for semiconductors, wherein the glass bonding material is a glass frit paste including glass frit having a melting point higher than the melting point of the Al-Si alloy and lower than the softening point of the glass core.

10. In paragraph 9, In the above sintering step, A method for manufacturing a multilayer glass substrate for semiconductors, wherein brazing bonding of a preliminary electrode, main hardening of the preliminary electrode, and sealing bonding between two laminated glass cores are realized at once by sintering at a temperature between the melting point of the glass frit and the softening point of the glass core.

11. In paragraph 10, A method for manufacturing a multilayer glass substrate for semiconductors, wherein the sintering temperature in the above sintering step is between 600°C and 630°C.

12. In paragraph 1, The material of the above brazing adhesive layer is a Mg-Zn alloy having a zinc (Zn) content of 5 to 6 wt% and the remainder being magnesium (Mg). The above conductive paste is an Ag paste using silver (Ag) as the main substrate. A method for manufacturing a multilayer glass substrate for semiconductors, wherein the glass bonding agent is a high-temperature epoxy adhesive or a high-temperature silicone adhesive that maintains adhesive performance at a temperature higher than the melting point of the Mg-Zn alloy.

13. In paragraph 12, In the above sintering step, A method for manufacturing a multilayer glass substrate for semiconductors, wherein brazing bonding of a preliminary electrode, main hardening of the preliminary electrode, and sealing bonding between two laminated glass cores are realized at once by sintering at a temperature at least higher than the melting point of the Mg-Zn alloy.

14. In paragraph 13, A method for manufacturing a multilayer glass substrate for semiconductors, wherein the sintering temperature in the above sintering step is between 350°C and 370°C.

15. In paragraph 9 or paragraph 12, The above conductive paste, 70 to 90 wt% silver (Ag) powder, 5 to 10 wt% binder, 4 to 15 wt% of organic solvent, Contains 1 to 5 wt% of additives, The organic solvent is one selected from the group consisting of butyl acetate, terpineol, turpentine, butyl carbitol, isopropyl alcohol, or a combination thereof. The above binder is an acrylic binder or a nitrocellulose binder, A method for manufacturing a multilayer glass substrate for semiconductors, wherein the additive is one selected from the group consisting of glycerin, polyethylene glycol (PEG), glass powder, or a combination thereof.

16. In paragraph 1, A method for manufacturing a multilayer glass substrate for semiconductors, wherein in the above glass bonding layer forming step, the glass bonding material is printed with a uniform thickness on the surface of the glass core except for some areas using screen printing and then pre-sintered to form a glass bonding layer.

17. Two or more glass cores arranged in a laminated manner; A trench formed in the thickness direction of the above glass core; A brazing adhesive layer formed on the surface that divides the trench; An electrode bonded to the brazing adhesive layer within the trench; and A multilayer glass substrate for semiconductors, comprising a glass bonding layer that mediates a hermetic bond between two glass cores.

18. In paragraph 17, The above glass core is a multilayer glass substrate for semiconductors, which is made of borosilicate glass or aluminosilicate glass having a thickness of 20 to 30㎛.

19. In paragraph 17, The above brazing adhesive layer is formed through vacuum deposition by spraying metal particles for brazing at high pressure in a vacuum atmosphere. A multilayer glass substrate for semiconductors, wherein the electrode is formed by filling a conductive paste containing conductive particles into the trench in which a brazing adhesive layer is formed and then sintering the conductive paste.

20. In paragraph 19, The material of the above brazing adhesive layer is an Al-Si alloy having a silicon (Si) content of 12.5 to 12.6 wt% and the remainder being aluminum (Al). The above conductive paste is an Ag paste using silver (Ag) as the main substrate. A multilayer glass substrate for semiconductors, wherein the glass bonding layer is formed by printing a glass frit paste containing glass frit having a melting point higher than the melting point of the Al-Si alloy and lower than the softening point of the glass core on the surface of the glass core to which the electrode is exposed and then pre-sintering the glass frit paste.

21. In paragraph 19, The material of the above brazing adhesive layer is a Mg-Zn alloy having a zinc (Zn) content of 5 to 6 wt% and the remainder being magnesium (Mg). The above conductive paste is an Ag paste using silver (Ag) as the main substrate. A multilayer glass substrate for semiconductors, wherein the glass bonding layer is formed by printing a high-temperature epoxy adhesive or a high-temperature silicone adhesive that maintains adhesive performance at a temperature higher than the melting point of the Mg-Zn alloy on the surface of a glass core with exposed electrodes and then drying it.

22. In paragraph 20 or 21, The above conductive paste, 70 to 90 wt% silver (Ag) powder, 5 to 10 wt% binder, 4 to 15 wt% of organic solvent, Contains 1 to 5 wt% of additives, The organic solvent is one selected from the group consisting of butyl acetate, terpineol, turpentine, butyl carbitol, isopropyl alcohol, or a combination thereof. The above binder is an acrylic binder or a nitrocellulose binder, A multilayer glass substrate for semiconductors, wherein the additive is any one selected from the group consisting of glycerin, polyethylene glycol (PEG), glass powder, or a combination thereof.

23. In paragraph 17, The above electrodes are, Signal electrode for transmitting signals or information; A power electrode for power supply isolated from the signal electrode; and A multilayer glass substrate for semiconductors, comprising a conducting electrode formed on each glass core for electrical connection between mutually matching electrodes of two adjacent glass cores.

24. In paragraph 23, A multilayer glass substrate for semiconductors, in which the signal electrode and power electrode are formed on each glass core.

25. In paragraph 23, A signal electrode is formed on one glass core, Power electrodes are formed on the other glass core, A multilayer glass substrate for semiconductors, in which a glass core on which a signal electrode is formed and a glass core on which a power electrode is formed are alternately laminated.

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